Apparatus for processing a substrate and method for processing a substrate

Abstract

Disclosed is a microwave application unit for applying microwaves to generate plasma. The microwave application unit includes an antenna plate disposed on a support unit and having a plurality of slits; a power source configured to apply microwaves to the antenna plate; a dielectric plate disposed above the antenna plate to face the antenna plate; an upper plate disposed above the dielectric plate; and a transmission plate disposed below the antenna plate and configured to transmit microwaves to a process space, wherein a regulation groove for regulating an electric field is formed on a lower surface of the upper plate.

Description

TECHNICAL FIELD

[0001] The present application relates to an apparatus and a method for processing a substrate, and more particularly, to an apparatus and a method for processing a substrate using plasma. BACKGROUND

[0002] Plasma is a state of ionized gas composed of ions, electrons, radicals, etc. generated by extremely high temperature, strong electric field or radio frequency electromagnetic field. In a semiconductor device manufacturing process, various processes are performed using plasma. Figure 1 is a cross-sectional view showing a general substrate processing apparatus for processing a substrate using microwaves. Referring to Figure 1 , a substrate W is supported on a support unit 20 disposed in a processing space 12 provided in a processing chamber 10, and is processed by generating plasma from a processing gas using microwaves in the processing space 12. An antenna plate 40 having a slit 42 is provided in an upper region of the substrate W. A dielectric plate 50 is provided on the antenna plate 40, and a transmission plate 60 is provided below the antenna plate 40. When microwaves are applied to the antenna plate 40, the microwaves propagate in a radial direction of the antenna plate 40, and then are transmitted to the processing space 12 through the slit 42 and the transmission plate 60.

[0003] When the substrate processing apparatus 1 having the structure of Figure 1 is used, in the processing space 12, the electric field is concentrated in a region facing an edge region of the antenna plate 40, so that the plasma density is relatively higher than that of other regions. Further, in the antenna plate 40 of the processing space 12, the electric field is concentrated in a region facing a region in which the slit 42 is formed, so that the plasma density is relatively higher than that of other regions. In the processing space 12, when the substrate is processed with plasma, the non-uniformity of the plasma density deteriorates the processing uniformity. For example, as shown in Figure 2 , when the edge region A is provided to have a higher plasma density than the center region B in the processing space 12, the edge region W1 of the substrate has a higher etching rate than the center region W2 of the substrate when an etching process is performed. Further, when an annealing process is performed on the substrate using plasma, the degree of annealing between the edge region W1 and the center region W2 of the substrate is different from each other.

[0004] In order to solve the above problems, the plasma density in the processing space is adjusted by changing the shape of the slit formed on the antenna plate, the position of the slit, and the distribution of the slit, but there is a structural limitation in changing the slit. Further, the plasma density is adjusted by differently changing the shape of the transmission plate provided below the antenna plate, but there is a problem that particles are generated according to the shape of the transmission plate. SUMMARY

[0005] An object of the present application is to provide an apparatus for processing a substrate and a method for processing a substrate, which can improve substrate processing efficiency.

[0006] Further, an object of the present application is to provide an apparatus for processing a substrate and a method for processing a substrate, which can improve uniformity of plasma density in an entire area of a processing space provided by a substrate.

[0007] Further, an object of the present application is to provide an apparatus for processing a substrate and a method for processing a substrate, which can improve uniformity of plasma density in an entire area of a processing space provided by a substrate.

[0008] Other objects of the present application are not limited to the above-mentioned objects, and other objects not mentioned above will be clearly understood by those skilled in the art from the following description.

[0009] An exemplary embodiment of the present application provides an apparatus for processing a substrate. The apparatus for processing a substrate can include a process chamber configured to have a process space therein; a support unit configured to support the substrate in the process chamber; a gas supply unit configured to supply a process gas to the process space; and a microwave application unit configured to generate plasma from the process gas supplied to the process space. The microwave application unit can include an antenna plate disposed on the support unit and having a plurality of slits; a power source configured to apply a microwave to the antenna plate; a dielectric plate disposed above the antenna plate to face the antenna plate; an upper plate disposed above the dielectric plate; and a transmission plate disposed below the antenna plate and configured to transmit the microwave to the process space. An adjustment groove for adjusting an electric field can be formed on a lower surface of the upper plate.

[0010] According to an exemplary embodiment, the adjustment groove can be disposed in a region facing the slits formed in the antenna plate.

[0011] According to an exemplary embodiment, the adjustment groove can be disposed as a ring surrounding a center of the antenna plate when viewed in plan.

[0012] According to an exemplary embodiment, the adjustment groove can be disposed in a region facing an edge region of the antenna plate.

[0013] According to an exemplary embodiment, the slits can be arranged to form one or more rings around a center of the antenna plate, and the adjustment groove can be disposed in a region overlapping the slits, respectively, when viewed in plan.

[0014] According to an exemplary embodiment, the slits can be arranged to form one or more rings surrounding the center of the antenna plate, and the adjustment grooves can be provided such that their depths are different from each other according to the distance from the center of the antenna plate.

[0015] According to an exemplary embodiment, the adjustment grooves can be provided such that their depths increase as they are farther away from the center of the antenna plate.

[0016] According to an exemplary embodiment, the upper plate can include a bottom plate having a through-hole, and an adjustment plate provided in the through-hole and movable in a vertical direction with respect to the bottom plate, wherein a lower region of the adjustment plate in the through-hole is provided as an adjustment groove, and the depth of the adjustment groove is provided to be changeable as the adjustment plate moves in the vertical direction.

[0017] According to an exemplary embodiment, the upper plate can further include a driver configured to drive the adjustment plate in the vertical direction.

[0018] According to an exemplary embodiment, the adjustment plate can be threadedly coupled with the substrate.

[0019] According to an exemplary embodiment, the upper plate and the dielectric plate can be provided to be in contact with each other.

[0020] An exemplary embodiment of the present application provides an apparatus for processing a substrate. The apparatus for processing a substrate includes a process chamber configured to have a process space therein, a support unit configured to support the substrate in the process chamber, an antenna plate disposed above the support unit and having a plurality of slits penetrating in a vertical direction, a power source configured to apply a microwave to the antenna plate, a dielectric plate disposed above the antenna plate to face the antenna plate, an upper plate disposed above the dielectric plate and including a cooling member to cool the dielectric plate, a transmission plate disposed below the antenna plate and configured to transmit the microwave to the process space, and a gas supply unit configured to supply a process gas to the process space, wherein annular adjustment grooves for adjusting an electric field are formed on a lower surface of the upper plate.

[0021] According to an exemplary embodiment, the antenna plate can include a first region and a second region, the first region and the second region are respectively provided with a plurality of slits and have an annular shape concentric with the center of the antenna plate, the first region can be a region farther away from the center of the antenna plate than the second region, and the annular adjustment grooves can include a first groove provided in a region facing the first region.

[0022] According to an exemplary embodiment, the annular adjustment grooves can further include a second groove provided in a region facing the second region.

[0023] According to an exemplary embodiment, the first recess can be provided with a depth greater than a depth of the second recess.

[0024] According to an exemplary embodiment, the adjustment recess can be provided in a region facing the narrow hole.

[0025] According to an exemplary embodiment, the upper plate can include a bottom plate provided with a through-hole, and an adjustment plate provided in the through-hole and provided to be vertically movable with respect to the bottom plate, wherein a depth of the adjustment recess can be provided to vary as the adjustment plate is vertically moved.

[0026] An exemplary embodiment of the present application provides a method for processing a substrate. The method for processing a substrate includes sequentially arranging an upper plate, a dielectric plate, an antenna plate formed with a plurality of narrow holes, and a transmission plate from top to bottom, transmitting microwaves applied to the antenna plate to a processing space below the transmission plate through the transmission plate, and generating plasma from a process gas supplied to the processing space to process the substrate in the processing space, wherein an adjustment recess is formed on a lower surface of the upper plate to adjust an electric field provided to the processing space by the microwaves.

[0027] According to an exemplary embodiment, the process gas can be a hydrogen-containing gas, and the processing of the substrate can include an annealing process.

[0028] According to an exemplary embodiment, the adjustment recess can be formed in a region facing the narrow hole to reduce an electric field below the narrow hole.

[0029] According to the present application, the efficiency of processing a substrate can be improved when the substrate is processed using plasma.

[0030] According to the present application, the uniformity of plasma density in the entire region of a processing space provided in a substrate can be improved.

[0031] According to the present application, by providing the adjustment recess below the upper plate as a factor to adjust the plasma density, the plasma density can be accurately adjusted.

[0032] The effects of the present application are not limited to the above-mentioned effects, and those skilled in the art can clearly understand other effects not mentioned from the above description and the attached drawings. BRIEF DESCRIPTION OF DRAWINGS

[0033] Figure 1 is a cross-sectional view schematically showing a general substrate processing apparatus.

[0034] Figure 2 is a graph for describing the plasma density in each region of a processing space in the apparatus of Figure 1

[0035] Figure 3 ​is a cross-sectional view schematically showing a substrate processing apparatus according to an exemplary embodiment of the present application.

[0036] Figure 4 is a plan view showing an example of a narrow hole formed in an antenna plate of Figure 3 .

[0037] Figure 5 is a perspective view showing an example of an upper plate of Figure 3 .

[0038] Figure 6 and Figure 7 are a cross-sectional view and a plan view, respectively, showing a microwave application unit in which a formation position of an adjustment groove according to an exemplary embodiment of the present application is adjusted.

[0039] Figure 8 and Figure 9 are a cross-sectional view and a plan view, respectively, showing a microwave application unit in which a formation position of an adjustment groove according to another exemplary embodiment of the present application is adjusted.

[0040] Figure 10 is a cross-sectional view showing a microwave application unit in which a formation position of an adjustment groove according to another exemplary embodiment of the present application is adjusted.

[0041] Figure 11 and Figure 12 are a cross-sectional view and a plan view, respectively, showing a microwave application unit in which a formation position of an adjustment groove according to still another exemplary embodiment of the present application is adjusted.

[0042] Figure 13 and Figure 14 are perspective views showing exemplary embodiments of an upper plate provided so that a depth of an adjustment groove is adjustable.

[0043] Figure 15 and Figure 16 are perspective views showing exemplary embodiments of an upper plate provided so that a depth of an adjustment groove is adjustable.

[0044] Figure 17 and Figure 18 are views showing other modifications of the upper plate, respectively. DETAILED DESCRIPTION

[0045] Hereinafter, exemplary embodiments of the present application will be described in greater detail with reference to the accompanying drawings. The exemplary embodiments of the present application can be modified in various forms, and the scope of the present application should not be interpreted to be limited to the exemplary embodiments described below. The exemplary embodiments will be provided to more completely describe the present application to those skilled in the art. Accordingly, the shape of components in the drawings and the like will be exaggerated to emphasize a clearer description.

[0046] The apparatus of the example embodiment can be used to perform an annealing process using a hydrogen plasma for a circular semiconductor substrate. However, the technical idea of the present application is not limited thereto, and can be applied to various types of processes of processing a substrate using a plasma. For example, the technical idea of the present application can be applied to an etching process of removing a thin film on a substrate W using a plasma or a deposition process of depositing a thin film on a substrate.

[0047] Hereinafter, the technical idea of the present application will be described with reference to Figures 3 to 18 An example embodiment of the present application will be described.

[0048] Figure 3 is a cross-sectional view schematically showing a substrate processing apparatus according to an example embodiment of the present application. With reference to Figure 3 , the substrate processing apparatus 2 has a processing chamber 100, a support unit 200, a microwave application unit 300, and a gas supply unit 400.

[0049] The processing chamber 100 has a processing space 120 therein. On a side wall of the processing chamber 100, a conveyance port 162 for conveying a substrate W is formed. The conveyance port 162 is openable and closable by a door 164.

[0050] The support unit 200 can support the substrate W in the processing space 120. According to the example embodiment, the support unit 200 can support the substrate W by an electrostatic force. Alternatively, the support unit 200 can support the substrate W by mechanical clamping. Alternatively, the substrate W can be placed on the support unit 200 without an appliance for fixing the substrate W.

[0051] The support unit 200 can be provided with a heating member 220 for heating the substrate W. According to the example embodiment, the heating member 220 can be provided as a heating wire provided inside the support unit 200.

[0052] The gas supply unit 400 supplies a processing gas to the processing space 120. The processing gas can include hydrogen gas. The gas supply unit 400 has a gas supply source 420 and a gas supply line 440. The gas supply source 420 can be coupled to the side wall of the processing chamber 100 through the gas supply line 440. According to the example embodiment, the side wall of the processing chamber 100 is provided with an annular buffer space 460, and the gas supply line 440 supplies the processing gas to the buffer space 460. The side wall of the processing chamber 100 is formed with a jet line 480 extending from the buffer space 460 to jet the gas to the processing space 120. A plurality of jet lines 480 can be provided along the circumference of the processing chamber 100.

[0053] An exhaust line 140 is connected to a lower wall of the process chamber 100. A pump (not shown) is connected to the exhaust line 140 to regulate the pressure in the process space 120 to a process pressure. One side of the support units 200 in the process space 120 is provided with an annular exhaust baffle 180. An inner surface of the exhaust baffle 180 is in contact with the support units 200, and an outer surface of the exhaust baffle can be in contact with a side wall of the process chamber 100. Gases are uniformly exhausted from an upper space of the exhaust baffle 180 to a lower space through the exhaust baffle 180.

[0054] The microwave application unit 300 has a transmission plate 320, an antenna plate 340, a dielectric plate 360, an upper plate 380, and a power source 500.

[0055] The transmission plate 320 is provided with a quartz material. Alternatively, the transmission plate 320 can be provided with a dielectric material such as aluminum oxide (Al2O3), aluminum nitride (AlN), sapphire, or silicon nitride (SiN). The transmission plate 320 serves as an upper wall of the process space 120 and transmits microwaves to the process space 120. According to an exemplary embodiment, an upper surface of the transmission plate 320 has a flat shape. In addition, a central region of a lower surface of the transmission plate 320 has a flat shape, and a protrusion 322 protruding downward can be provided in an edge region of the lower surface of the transmission plate 320. Alternatively, a protrusion or a groove can be formed in the central region of the lower surface of the transmission plate 320.

[0056] The antenna plate 340 is provided in a disc shape on the transmission plate 320. The antenna plate 340 is positioned in contact with the transmission plate 320. Alternatively, the antenna plate 340 can be positioned so as to be spaced apart from the transmission plate 320 by a predetermined distance. The antenna plate 340 can be provided with a metal material. According to an exemplary embodiment, the antenna plate 340 can be provided with a copper or aluminum material. The antenna plate 340 can be plated with gold or silver on a surface thereof. A plurality of slits 342 for radiating microwaves are formed in the antenna plate 340. The slits 342 are formed to penetrate through from an upper surface to a lower surface of the antenna plate 340.

[0057] Figure 4 is a plan view showing an example of a slit formed in the antenna plate.

[0058] Reference Figure 4The slits 342 are arranged in the antenna plate 340 to form a plurality of rings. The antenna plate 340 has a first region 344a, a second region 344b, and a third region 344c, which are formed together with the slits 342 and have a ring shape. The first region 344a is farther from the center of the antenna plate 340 than the second region 344b. Also, the second region 344b is farther from the center of the antenna plate 340 than the third region 344c. The first region 344a, the second region 344b, and the third region 344c are disposed in a circular ring shape covering the center of the antenna plate 340. The first region 344a, the second region 344b, and the third region 344c are disposed concentrically with respect to each other. The first region 344a is disposed to cover the second region 344b, and the second region 344b is disposed to cover the third region 344c. The first region 344a and the second region 344b are spaced apart from each other, and the second region 344b and the third region 344c are spaced apart from each other.

[0059] Hereinafter, the slits 342 formed in the first region 344a are referred to as first slits 342a, the slits 342 formed in the second region 344b are referred to as second slits 342b, and the slits 342 formed in the third region 344c are referred to as third slits 342c.

[0060] The first slits 342a are formed in the same shape as each other. According to an exemplary embodiment, the first slits 342a are disposed in a "+" shape in which two long "-" shaped slits cross each other. The second slits 342b are formed in the same shape as each other. According to an exemplary embodiment, the second slits 342b are disposed in a "+" shape in which two long "-" shaped slits cross each other in the same manner as the first slits 342a. The third slits 342c are formed in the same shape as each other. According to an exemplary embodiment, the third slits 342c have a shape in which four short "-" shaped slits are spaced apart from each other at intervals of 90°.

[0061] The shapes of the first slits 342a, the second slits 342b, and the third slits 342c are not limited thereto and can be variously changed. Also, the number of regions having the slits 342 is not limited thereto and can be variously changed.

[0062] A dielectric plate 360 is disposed on the antenna plate 340. The wavelength of the microwave is changed by the dielectric plate 360. The dielectric plate 360 is provided with a quartz material. Alternatively, the dielectric plate 360 can be provided with a dielectric material such as aluminum oxide (Al203), aluminum nitride (AIN), sapphire, or silicon nitride (SiN). The dielectric plate 360 can be provided with the same material as the transmissive plate 320. Alternatively, the dielectric plate 360 can be provided with a different material from the transmissive plate 320. The dielectric plate 360 can be provided in a disc shape. The upper and lower surfaces of the dielectric plate 360 can be provided flat, respectively. The dielectric plate 360 can be provided in contact with the antenna plate 340. Alternatively, the dielectric plate 360 can be provided at a predetermined distance apart from the antenna plate 340.

[0063] An upper plate 380 is disposed on the dielectric plate 360. The upper plate 380 is provided in a metal material. According to an exemplary embodiment, the upper plate 380 can be provided with an aluminum material. According to an exemplary embodiment, the upper plate 380 can be provided with a cooling plate for cooling the dielectric plate 360, the antenna plate 340, and the transmissive plate 320. A cooling flow passage 381 is formed in the upper plate 380, and cooling water can flow through the cooling flow passage 381.

[0064] A power source 500 generates a microwave. The microwave generated in the power source 500 has a frequency of 23 GHz to 26 GHz. The microwave is transmitted through a waveguide 520. The waveguide 520 can be provided as a tube having a polygonal cross section. The inner surface of the waveguide 520 is provided as a conductor. For example, the inner surface of the waveguide 520 can be provided with gold or silver.

[0065] A coaxial converter 540 is disposed inside the waveguide 520. The coaxial converter 540 is located at an opposite side of the power source 500. One end of the coaxial converter 540 is fixed to the inner surface of the waveguide 520. The coaxial converter 540 can be provided in a tapered shape in which the lower cross-sectional area is smaller than the upper cross-sectional area. The microwave transmitted through the inner space of the waveguide 520 is mode-converted in the coaxial converter 540 to propagate in a downward direction.

[0066] The mode-converted microwave is transmitted to an antenna through an outer conductor 560 and an inner conductor 580. The outer conductor 560 is located between the waveguide 520 and the upper plate 380. According to an exemplary embodiment, the upper end of the outer conductor 560 is in contact with the waveguide 520, and the lower end of the outer conductor 560 is in contact with the upper plate 380. A space connected to the inner space of the waveguide 520 is formed inside the outer conductor 560. The inner conductor 580 is located inside the outer conductor 560. The inner conductor 580 is provided in a rod shape and is longitudinally disposed in a vertical direction. The outer surface of the inner conductor 580 is spaced apart from the inner surface of the outer conductor 560.

[0067] The upper end of the inner conductor 580 is fixed to the lower end of the coaxial converter 540. The inner conductor 580 extends downward. The lower end of the inner conductor 580 is fixedly connected to the center of the antenna plate 340. The inner conductor 580 is disposed perpendicular to the upper surface of the antenna plate 340. The inner conductor 580 and the outer conductor 560 are coaxially disposed.

[0068] Microwaves propagating vertically to the antenna plate 340 propagate radially along the dielectric plate 360 ​​and are then transmitted to the processing space 120 through the aperture 342 formed in the antenna plate 340 and the transmission plate 320.

[0069] Return to reference Figure 4 An adjustment groove 382 is formed on the upper plate 380. The adjustment groove 382 adjusts the electric field provided to the space 120 to be processed. The adjustment groove 382 is formed on the lower surface of the upper plate 380.

[0070] Figure 5 It is shown Figure 3 A three-dimensional diagram of an example of the upper plate. (Reference) Figure 5 The adjusting groove 382 can be configured as an annular shape. The adjusting groove 382 is formed at a predetermined depth from the bottom to the top of the upper plate 380. The adjusting groove 382 can be formed with the same width along its circumference. Alternatively, the adjusting groove 382 can be formed with the same width along its circumference.

[0071] Microwaves applied to the antenna plate 340 propagate radially outward. In the region where the adjustment groove 382 is provided, a portion of the microwaves are induced into the adjustment groove 382. Therefore, when viewed from above, the electric field is weakened in the processing space 120 in the region overlapping with the region where the adjustment groove 382 is provided.

[0072] Typically, when using, such as Figure 1 In the substrate processing apparatus with the general structure shown, compared to other areas, the electric field is concentrated in the edge region facing the antenna plate in the processing space. According to an exemplary embodiment of the present invention, such as... Figure 3 As shown, the adjustment groove 382 can be formed in the region of the lower surface of the upper plate 380 facing the edge region of the antenna plate 340.

[0073] Furthermore, since the microwaves propagating along the antenna plate 340 propagate downwards through the aperture 342 and the transmission plate 320, the electric field is relatively concentrated in the region facing the area where the aperture 342 is formed in the processing space 120 compared to other regions. Therefore, according to the exemplary embodiment, the adjustment groove 382 can be formed in the lower surface of the upper plate 380 in the region facing the area where the aperture 342 is formed.

[0074] The depth and width of the adjustable groove 382 affect the magnitude of the electric field and the width of the region where the electric field is concentrated. Therefore, the depth and width of the adjustable groove 382 can be selected by considering the magnitude of the electric field and the width of the region where the electric field is concentrated.

[0075] Figure 6 and Figure 7 These are, respectively, a cross-sectional view and a plan view of the microwave application unit showing the formation position of the adjustment groove according to an exemplary embodiment of the present invention. Figure 7 In the middle, the area indicated by the shade is the area in the upper plate 1380 where the adjustment groove is formed.

[0076] refer to Figure 6 and Figure 7 When the aperture 342 is formed in the first region 344a, the second region 344b, and the third region 344c of the antenna plate 340, the adjustment groove 1382 is formed in the region facing the outermost first region 344a. The width of the adjustment groove 1382 can be set to be substantially the same as the width of the first region 344a. If the adjustment groove 1382 is not provided, then in Figure 6 In the processing space 120, the electric field is most concentrated in the region facing the adjustment groove 1382 (which is the region forming the aperture 342 and also corresponds to the edge region of the antenna plate 340) to increase plasma density. When the adjustment groove 1382 is positioned facing this region, electric field concentration in that region can be prevented. Therefore, plasma uniformity throughout the entire processing space 120 can be improved. Depending on the actual plasma density in each region of the processing space 120, the formation position of the adjustment groove 1382 in the microwave application unit 1300 can be set differently than described above.

[0077] Figure 8 and Figure 9 These are, respectively, a cross-sectional view and a plan view of a microwave application unit showing the formation position of an adjustment groove according to another exemplary embodiment of the present invention. Figure 8 In the middle, the area indicated by the shade is the area in the upper plate 2380 where the adjustment groove is formed.

[0078] refer to Figure 8 and Figure 9 Adjustment grooves 2382 are formed at positions corresponding to each region forming the aperture 342. For example, the aperture 342 is formed in the first region 344a, the second region 344b, and the third region 344c of the antenna plate 340 (see reference). Figure 7), and the adjustment groove 2382 includes a first groove 2382a, a second groove 2382b, and a third groove 2382c. The slits 342 formed in the first region 344a are referred to as first slits 342a, the slits 342 formed in the second region 344b are referred to as second slits 342b, and the slits 342 formed in the third region 344c are referred to as third slits 342c. The first groove 2382a is formed in a region facing the first region 344a, the second groove 2382b is formed in a region facing the second region 344b, and the third groove 2382c is formed in a region facing the third region 344c. According to the exemplary embodiment, the first region 344a, the second region 344b, and the third region 344c can each be disposed at the same width from each other, and the first groove 2382a, the second groove 2382b, and the third groove 2382c can each be disposed at the same width from each other. Further, the first groove 2382a, the second groove 2382b, and the third groove 2382c can each be disposed at the same depth from each other. In the case where the microwave application unit 2300 using Figure 8 and Figure 9 a microwave application unit 2300 is used, it is possible to prevent the electric field from being concentrated in the entire region of the processing space 120 facing the regions in which the slits 342 are formed in the antenna plate 340.

[0079] Figure 10 is a cross-sectional view of a microwave application unit showing the formation positions of adjustment grooves according to another exemplary embodiment of the present application.

[0080] A plurality of adjustment grooves 3382 are formed in the upper plate 3380. Each of the adjustment grooves 3382 is formed in a ring shape. The adjustment grooves 3382 are disposed at different depths from each other. According to the exemplary embodiment, the farther the distance from the center of the antenna plate 340, the greater the depth of the adjustment grooves 3382 can be disposed. For example, as shown in Figure 10 the first groove 3382a is formed in the upper plate 3380 at a position facing the first region 344a, the second groove 3382b is formed in the upper plate 3380 at a position facing the second region 344b, and the third groove 3382c is formed in the upper plate 3380 at a position facing the third region 344c. The depth h1 of the first groove 3382a can be disposed to be greater than the depth h2 of the second groove 3382b, and the depth h2 of the second groove 3382b can be disposed to be greater than the depth h3 of the third groove 3382c. In general, since the electric field is further gradually concentrated toward the edge region of the antenna plate 340, when a microwave application unit 2300 using Figure 10When the microwave application unit 3300 in FIG. 33 is used, the electric field can be provided in the processing space 120 with a more uniform size. The dimensional relationship of the depths between the first recess 3382a, the second recess 3382b, and the third recess 3382c can be set differently from the above according to the actual plasma density of each region in the processing space 120.

[0081] Figure 11 and Figure 12 are a cross-sectional view and a plan view, respectively, of a microwave application unit showing the positions of adjustment recesses according to yet another exemplary embodiment of the present application. In Figure 12 the region indicated by the hatching is a region in which an adjustment recess is formed in the upper plate.

[0082] A plurality of adjustment recesses 4382 are formed in the upper plate 4380 in the microwave application unit 4300. Each adjustment recess 4382 is formed in a ring shape. The adjustment recesses 4382 are set at different depths from each other. According to the exemplary embodiment, the farther the distance from the center of the antenna plate 340, the greater the width of the adjustment recess 4382 can be set. For example, as Figure 10 indicated in FIG. 43, a first recess 4382a is formed in the upper plate 4380 at a position facing the first region 344a, a second recess 4382b is formed in the upper plate 4380 at a position facing the second region 344b, and a third recess 4382c is formed in the upper plate 4380 at a position facing the third region 344c. The width Wl of the first recess 4382a can be set to be greater than the width W2 of the second recess 4382b, and the width W2 of the second recess 4382b can be set to be greater than the width W3 of the third recess 4382c. The dimensional relationship of the widths between the first recess 4382a, the second recess 4382b, and the third recess 4382c can be set differently from the above according to the actual plasma density of each region in the processing space 120.

[0083] According to yet another exemplary embodiment of the present application, the adjustment recesses on the upper plate can be set such that the depths thereof are adjustable. Figure 13 is a perspective view showing an exemplary embodiment of an upper plate set such that the depths of the adjustment recesses are adjustable.

[0084] Referring to Figure 13 , the upper plate 5380 in the microwave application unit 5300 has a bottom plate 5384 and an adjustment plate 5386. The bottom plate 5384 is formed with a through-hole that penetrates in the vertical direction, and the adjustment plate 5386 is inserted into the through-hole. According to the exemplary embodiment, the through-hole is formed in a ring shape, and the adjustment plate 5386 has a ring shape. In the through-hole, a lower region of the adjustment plate 5386 serves as the above-described adjustment recess 5382. The adjustment plate 5386 is set to be movable in the vertical direction. According to the exemplary embodiment, the adjustment plate 5386 is driven in the vertical direction by a driver 5388. AsFigure 13 As shown, when the adjustment plate 5386 is completely inserted into the through-hole, the depth of the adjustment groove 5382 is set to be small. As shown, Figure 14 As shown, when a portion of the adjustment plate 5386 is moved to protrude to the top of the bottom plate 5384, the depth of the adjustment groove 5382 is set to be large. The driver 5388 is provided as a cylinder, so that the depth of the adjustment groove 5382 can be changed between the first size and the second size. Alternatively, the driver 5388 is provided as a motor, so that the depth of the adjustment groove 5382 can be changed to various sizes.

[0085] Alternatively, the depth adjustment of the adjustment groove 6382 can be performed manually by an operator. Threads can be formed on the inner surface of the through-hole of the bottom plate 6384 and the outer surface of the adjustment plate 6386, respectively. A tool groove 6388 of an insertion tool can be formed on the upper surface of the adjustment plate 6386 to rotate the adjustment plate 6386. As shown, Figure 15 As shown, in the upper plate 6380 in the microwave application unit 6300, the bottom plate 6384 and the adjustment plate 6386 are provided, and when the adjustment plate 6386 is completely inserted into the through-hole, the depth of the adjustment groove 6382 is set to be small. As shown, Figure 16 As shown, when a portion of the adjustment plate 6386 is moved to protrude to the top of the bottom plate 6384 by rotation of the adjustment plate 6386, the depth of the adjustment groove 6382 is set to be large.

[0086] In the above-described exemplary embodiment, a case where the adjustment groove is formed in a ring shape has been described as an example. However, unlike this, as shown, Figure 17 As shown, in the microwave application unit 7300, the upper plate 7380 is provided with a plurality of adjustment grooves 7382 at the same distance from the center of the antenna plate 340, and these adjustment grooves 7382 can be arranged to form a ring.

[0087] In the above-described exemplary embodiment, the arrangement of the adjustment groove based on the distance from the center of the antenna plate has been described as an example. However, unlike this, when the region in which the electric field is concentrated in the processing space 120 is a specific region regardless of the distance, as shown, Figure 18 As shown, in the microwave application unit 8300, in the upper plate 8380, the adjustment groove 8382 can be formed only in a region facing the above-described specific region.

[0088] In the above-described exemplary embodiment, the formation of the adjustment groove in a region facing the slit hole formed in the antenna plate has been described. However, unlike this, the adjustment groove can be formed in a region which does not overlap the slit hole formed on the antenna plate when viewed from above.

[0089] The foregoing detailed description has set forth various exemplary embodiments of the application via the use of a number of particular examples and to present these embodiments as examples. It is to be understood, however, that the description is that of the broadest aspects of the application and that modifications and variations of specific examples can be made to the applications described and that such modifications and variations are also intended to fall within the scope of the applications. Thus, unless specifically set forth herein, the particular shape of materials and of the apparatus is not intended to limit any aspect of the applications.

Claims

1. An apparatus for processing a substrate, comprising: a processing chamber configured to have a processing space therein; a support unit configured to support the substrate in the processing chamber; a gas supply unit configured to supply a processing gas to the processing space; and a microwave application unit configured to generate plasma from the processing gas supplied to the processing space, wherein the microwave application unit includes: a transmission plate configured to transmit microwaves to the processing space; an antenna plate provided on the transmission plate and having a plurality of slits; a power source configured to apply the microwaves to the antenna plate; a dielectric plate provided above the antenna plate to face the antenna plate; an upper plate provided above the dielectric plate, wherein the plurality of slits are arranged to form a plurality of rings around a center of the antenna plate, wherein a tuning groove is formed on a lower surface of the upper plate, the tuning groove being configured to tune an electric field and a plurality of tuning grooves are provided, wherein the plurality of tuning grooves are provided in a region facing the plurality of slits formed in the antenna plate, and are arranged in a ring shape around the center of the antenna plate when viewed from above.

2. The apparatus for processing a substrate according to claim 1, wherein the plurality of tuning grooves are provided in a region facing the plurality of slits formed in the antenna plate.

3. The apparatus for processing a substrate according to claim 1, wherein the tuning groove is provided in a region facing an edge region of the antenna plate.

4. The apparatus for processing a substrate according to any one of claims 1 to 3, wherein the plurality of tuning grooves are respectively provided in regions overlapping the plurality of slits when viewed from above.

5. The apparatus for processing a substrate according to claim 1 or 2, wherein the plurality of slits are arranged to form one ring or a plurality of rings around a center of the antenna plate, and wherein the tuning grooves are provided such that depths thereof are different from each other according to distances from the center of the antenna plate.

6. The apparatus for processing a substrate according to claim 5, wherein the tuning grooves are provided such that the depths thereof increase away from the center of the antenna plate.

7. The apparatus for processing a substrate according to any one of claims 1 to 3, wherein the upper plate includes: a bottom plate having a through-hole; and a tuning plate provided in the through-hole and arranged to be movable in a vertical direction with respect to the bottom plate, wherein in the through-hole, a lower region of the tuning plate functions as the tuning groove, and wherein a depth of the tuning groove is arranged to be changeable with movement of the tuning plate in the vertical direction.

8. The apparatus for processing a substrate according to claim 7, wherein the upper plate further includes a driver configured to drive the tuning plate in the vertical direction.

9. The apparatus for processing a substrate according to claim 7, wherein the tuning plate is threadedly connected to the bottom plate. ​ ​ 10. The apparatus for processing a substrate according to any one of claims 1 to 3, wherein the upper plate and the dielectric plate are disposed in contact with each other.

11. An apparatus for processing a substrate, comprising: a processing chamber configured to have a processing space therein; a support unit configured to support the substrate in the processing chamber; an antenna plate disposed above the support unit and having a plurality of slits therethrough in a vertical direction; a power source configured to apply microwaves to the antenna plate; a dielectric plate disposed above the antenna plate to face the antenna plate; an upper plate disposed above the dielectric plate and including a cooling flow passage to cool the dielectric plate; a transmission plate disposed below the antenna plate and configured to transmit the microwaves to the processing space, and a gas supply unit configured to supply a processing gas to the processing space, wherein an annular adjustment groove is formed on a lower surface of the upper plate, the annular adjustment groove being configured to adjust an electric field, wherein the antenna plate includes a first region and a second region, the first region and the second region being respectively provided with the plurality of slits and having an annular shape concentric with a center of the antenna plate, wherein the first region is a region farther from the center of the antenna plate than the second region, and wherein the annular adjustment groove includes: a first groove disposed in a region facing the first region; and a second groove disposed in a region facing the second region.

12. The apparatus for processing a substrate according to claim 11, wherein a depth of the first groove is set to be greater than a depth of the second groove.

13. The apparatus for processing a substrate according to claim 11, wherein the upper plate includes: a base plate having a through-hole; and an adjustment plate disposed in the through-hole and configured to be vertically movable with respect to the base plate, wherein a depth of the annular adjustment groove is set to be changeable with vertical movement of the adjustment plate.

14. A method for processing a substrate, the method using an apparatus for processing a substrate according to any one of claims 1 to 10, and comprising: sequentially disposing an upper plate, a dielectric plate, an antenna plate formed with a plurality of slits, and a transmission plate in a direction from top to bottom, transmitting microwaves applied to the antenna plate to a processing space below the transmission plate through the transmission plate, and generating plasma from a processing gas supplied to the processing space to process the substrate in the processing space, wherein an adjustment groove is formed on a lower surface of the upper plate to adjust an electric field provided to the processing space by the microwaves.

15. The method for processing a substrate according to claim 14, wherein the processing gas is a hydrogen-containing gas, and wherein the processing of the substrate includes an annealing process.

16. The method for processing a substrate according to claim 15, wherein the adjustment groove is formed in a region facing the plurality of slits to reduce an electric field below the plurality of slits. ​ ​

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