Ultra-wideband antenna

Abstract

This application discloses an ultra-wideband antenna. The ultra-wideband antenna is disposed in a communication device including a metal component. The ultra-wideband antenna includes: a first dielectric substrate, a main radiating patch, a parasitic radiating patch, and an impedance matching patch; the first dielectric substrate has a first conductive via; the main radiating patch is disposed on the upper surface of the first dielectric substrate and electrically connected to the first conductive via; the parasitic radiating patch is disposed on the lower surface of the first dielectric substrate; the impedance matching patch and the parasitic radiating patch are located in the same plane and electrically connected to the first conductive via, the parasitic radiating patch surrounds the impedance matching patch and is isolated from it, and the impedance matching patch has a feed point. The parasitic radiating patch is configured to couple energy from the main radiating patch, and the parasitic radiating patch is configured to generate a notch frequency close to the notch frequency generated by the main radiating patch, thereby widening the bandwidth.

Description

Technical Field

[0001] This application relates to the field of antenna technology, and in particular to an ultra-wideband antenna. Background Technology

[0002] Ultra-wideband (UWB) is a wireless carrier communication technology mainly used for short-range high-speed data communication of about 10 meters. It uses non-sinusoidal narrow pulses in the nanosecond to microsecond range to transmit data and transmits extremely low-power signals over a wide spectrum.

[0003] Currently, most ultra-wideband antennas employ a single-radiating patch design (i.e., a single-patch antenna), where the radiating patch is located on top of a dielectric substrate, and the antenna reference ground is located on the bottom surface of the substrate. However, single-patch antennas suffer from narrow bandwidth due to their physical limitations. Therefore, manufacturers have proposed increasing the antenna's VSWR bandwidth by using tapered feed lines or changing the patch shape, but this approach suffers from poor positioning performance and manufacturing instability due to its complex shape. Summary of the Invention

[0004] This application provides an ultra-wideband antenna that solves the problems in the prior art where a single patch antenna is used to increase the antenna's VSWR bandwidth by using a gradually changing feed line or changing the shape of the patch, resulting in poor positioning performance and complex shape leading to manufacturing instability.

[0005] To solve the above-mentioned technical problems, this application is implemented as follows:

[0006] This application provides an ultra-wideband antenna disposed in a communication device including a metal component. The ultra-wideband antenna includes: a first dielectric substrate, a main radiating patch, a parasitic radiating patch, and an impedance matching patch; the first dielectric substrate is provided with a first conductive via; the main radiating patch is disposed on the upper surface of the first dielectric substrate and electrically connected to the first conductive via; the parasitic radiating patch is disposed on the lower surface of the first dielectric substrate; the impedance matching patch and the parasitic radiating patch are located in the same plane and are electrically connected to the first conductive via, the parasitic radiating patch surrounds the impedance matching patch and is isolated from the impedance matching patch, and the impedance matching patch is provided with a feed point. The parasitic radiating patch is configured to couple energy from the main radiating patch, and the parasitic radiating patch is configured to generate a notch frequency close to the notch frequency generated by the main radiating patch, thereby widening the bandwidth.

[0007] This application also provides an ultra-wideband antenna, comprising: a first dielectric substrate, a main radiating patch, a parasitic radiating patch, an impedance matching patch, a second dielectric substrate, a metal ground, and a feed pad; the first dielectric substrate is provided with a first conductive via; the main radiating patch is disposed on the upper surface of the first dielectric substrate and electrically connected to the first conductive via; the parasitic radiating patch is disposed on the lower surface or inside the first dielectric substrate; the impedance matching patch and the parasitic radiating patch are located on the same plane and electrically connected to the first conductive via, the parasitic radiating patch surrounding the impedance matching patch and isolated from it; the second dielectric substrate is provided with a second conductive via, the first dielectric substrate is bonded to the upper surface of the second dielectric substrate, the second conductive via is electrically connected to the impedance matching patch; the metal ground is disposed on the lower surface of the second dielectric substrate; the feed pad and the metal ground are located on the same plane and electrically connected to the second conductive via, the metal ground surrounding the feed pad and isolated from it, the feed pad being provided with a feed point. The parasitic radiating patch is configured to couple energy from the main radiating patch, and the notch frequency generated by the parasitic radiating patch is configured to be close to the notch frequency generated by the main radiating patch in order to broaden the bandwidth.

[0008] In this embodiment, the ultra-wideband antenna achieves dual resonance through a parasitic radiating patch in conjunction with the main radiating patch, thus broadening the antenna's bandwidth and overcoming the narrow bandwidth limitation of a single-pattern antenna. Furthermore, the ultra-wideband antenna achieves impedance matching of the main radiating patch by adding an impedance matching patch placed within and isolated from the parasitic radiating patch on the feed line of the main radiating patch. This improves the coupling between the notch filters generated by the parasitic radiating patch and the main radiating patch, and also achieves the goal of miniaturizing the parasitic radiating patch. Attached Figure Description

[0009] The accompanying drawings, which are included to provide a further understanding of this application and form part of this application, illustrate exemplary embodiments and are used to explain this application, but do not constitute an undue limitation of this application. In the drawings:

[0010] Figure 1 This is a three-dimensional schematic diagram of an embodiment of the ultra-wideband antenna according to this application;

[0011] Figure 2 for Figure 1 A cross-sectional view of the ultra-wideband antenna along line segment AA;

[0012] Figure 3 for Figure 1 A top view of an ultra-wideband antenna;

[0013] Figure 4 for Figure 1 A bottom view of an ultra-wideband antenna;

[0014] Figure 5This is a perspective view of another embodiment of the ultra-wideband antenna according to this application;

[0015] Figure 6 for Figure 5 A cross-sectional view of the ultra-wideband antenna along line segment BB;

[0016] Figure 7 for Figure 5 A top view of an ultra-wideband antenna;

[0017] Figure 8 for Figure 5 A schematic diagram of an embodiment in which a parasitic radiation patch and an impedance matching patch are provided on a first dielectric substrate;

[0018] Figure 9 for Figure 5 A bottom view of an ultra-wideband antenna;

[0019] Figure 10 The simulation diagram shows the scattering parameters of an existing single-patch antenna;

[0020] Figure 11 for Figure 5 Simulation diagram of scattering parameters of an ultra-wideband antenna;

[0021] Figure 12 for Figure 11 The stereo radiation pattern at a working frequency of 7.3 GHz with a mid-scattering parameter of -3 dB;

[0022] Figure 13 for Figure 11 The three-dimensional radiation pattern with the operating frequency as the center of the frequency band; and

[0023] Figure 14 for Figure 11 The stereo radiation pattern at an operating frequency of 8.78 GHz with a mid-scattering parameter of -3 dB. Detailed Implementation

[0024] The embodiments of the present invention will be described below with reference to the accompanying drawings. In these drawings, the same reference numerals denote the same or similar components or method flows.

[0025] It must be understood that the use of terms such as "comprising" or "including" in this specification is intended to indicate the presence of specific technical features, values, method steps, work processes, and / or components, but does not preclude the addition of more technical features, values, method steps, work processes, components, or any combination thereof.

[0026] It is important to understand that when a component is described as "connected" or "coupled" to another component, it can be a direct connection or coupling to other components, and there may be intermediate components. Conversely, when a component is described as "directly connected" or "directly coupled" to another component, there are no intermediate components.

[0027] Please see Figure 1 and Figure 2 , Figure 1 This is a three-dimensional schematic diagram of an embodiment of the ultra-wideband antenna according to this application. Figure 2 for Figure 1 A cross-sectional view of the ultra-wideband antenna along segment AA. The ultra-wideband antenna 100 may be disposed in a communication device (not shown) including a metal component, wherein the communication device generally refers to an electronic device capable of communication, such as, but not limited to, a mobile phone, a laptop computer, or a communication module disposed in a mobile phone or laptop computer. Figure 1 and Figure 2 As shown, the ultra-wideband antenna 100 includes: a first dielectric substrate 110, a main radiating patch 120, a parasitic radiating patch 130, and an impedance matching patch 140. The first dielectric substrate 110 has a first conductive via 50; the main radiating patch 120 is disposed on the upper surface 112 of the first dielectric substrate 110 and electrically connected to the first conductive via 50; the parasitic radiating patch 130 is disposed on the lower surface 114 of the first dielectric substrate 110; the impedance matching patch 140 and the parasitic radiating patch 130 are located on the same plane and electrically connected to the first conductive via 50, the parasitic radiating patch 130 surrounds the impedance matching patch 140 and is isolated from it, and the impedance matching patch 140 has a feed point 142.

[0028] For more details, please see Figures 1 to 3 , Figure 3 for Figure 1 The image shows a top view of an ultra-wideband antenna. The first dielectric substrate 110 can be a flexible substrate or a rigid substrate; the material of the flexible substrate may include, but is not limited to, polyimide (PI), polycarbonate (PC), polyester fiber (PET), cyclic olefin copolymer (COC), or combinations thereof, and the material of the rigid substrate may include, but is not limited to, glass, quartz, wafer, ceramic, or combinations thereof, but this embodiment is not intended to limit the scope of this application. The main radiating patch 120 and the first conductive via 50 may be made of conductive metal (e.g., copper, silver, aluminum, zinc, gold, or alloys thereof). The conductive metal is applied to the upper surface 112 of the first dielectric substrate 110 using a lamination or spraying process to form the main radiating patch 120. The first conductive via 50 is electrically connected to the main radiating patch 120 to serve as part of the antenna feed circuit.

[0029] Please see Figure 1 , Figure 2 and Figure 4 , Figure 4 for Figure 1 The image shows a bottom view of the ultra-wideband antenna. The parasitic radiating patch 130 and the impedance matching patch 140 can be made of conductive metal (e.g., copper, silver, aluminum, zinc, gold, or alloys thereof). The conductive metal is applied to the lower surface 114 of the first dielectric substrate 110 using a lamination or spraying process to form the parasitic radiating patch 130 and the impedance matching patch 140 (i.e., the parasitic radiating patch 130 and the impedance matching patch 140 are located in the same plane). The parasitic radiating patch 130 surrounds the impedance matching patch 140, and the parasitic radiating patch 130 is not connected to the impedance matching patch 140 (i.e., the parasitic radiating patch 130 and the impedance matching patch 140 are isolated from each other). The signal is input through the feed point 142 of the impedance matching patch 140, and transmitted to the main radiating patch 120 via the impedance matching patch 140 and the first conductive via 50. This causes the main radiating patch 120 to generate a notch frequency corresponding to its equivalent resonant length (i.e., the notch frequency generated by the main radiating patch 120 depends on the equivalent resonant length of the main radiating patch 120) and radiate the signal outward. The parasitic radiating patch 130 couples energy from the main radiating patch 120 and generates a notch frequency corresponding to its equivalent resonant length (i.e., the notch frequency generated by the parasitic radiating patch 130 depends on the equivalent resonant length of the parasitic radiating patch 130). When the notch frequency generated by the parasitic radiating patch 130 is close to the notch frequency generated by the main radiating patch 120, the bandwidth of the ultra-wideband antenna 100 can be widened. Among them, the impedance matching patch 140 is used to match the impedance between the notch frequency generated by the parasitic radiation patch 130 and the notch frequency generated by the main radiation patch 120, and can also improve the coupling between the two notches, making the scattering parameters flatter.

[0030] In this embodiment, the ultra-wideband antenna 100 disposed inside the communication device uses a metal component (not shown) with an external dimension larger than that of the ultra-wideband antenna 100 as the antenna reference ground. The signal is directly fed onto the impedance matching patch 140. Therefore, by providing a main radiating patch 120 on the upper surface 112 and a parasitic radiating patch 130 and an impedance matching patch 140 on the lower surface 114 of the first dielectric substrate 110, the ultra-wideband antenna 100 can achieve a widened bandwidth, further reduce the overall thickness of the ultra-wideband antenna 100, and simplify the manufacturing process.

[0031] In one embodiment, please refer to Figure 4Since the location of the feed point 142 needs to be adjusted according to impedance matching requirements (i.e., adjusting the impedance of the ultra-wideband antenna 100 by adjusting the position of the feed point 142), the feed point 142 and the first conductive via 50 are spaced apart by a predetermined distance D1 in the horizontal direction H (i.e., a predetermined distance D1 from the center point of the first conductive via 50 to the feed point 142 in the horizontal direction H). The predetermined distance D1 depends on the impedance of the ultra-wideband antenna 100. In some embodiments, the relative position of the feed point 142 and the first conductive via 50 on the horizontal plane depends on the impedance of the ultra-wideband antenna 100.

[0032] In one embodiment, please refer to Figure 4 There is a gap between the parasitic radiation patch 130 and the impedance matching patch 140. The gap is an annular groove 60 surrounding the impedance matching patch 140. The annular groove 60 is used to increase the equivalent resonant length of the parasitic radiation patch 130 and can effectively reduce the size of the parasitic radiation patch 130, which is beneficial for miniaturization design.

[0033] In one embodiment, the main radiating patch 120, the parasitic radiating patch 130, the impedance matching patch 140, and the annular groove 60 have regular or irregular shapes. The regular shapes may be, but are not limited to, square, rectangular, circular, elliptical, or rhomboid, while the irregular shapes may be, but are not limited to, L-shaped, T-shaped, or I-shaped.

[0034] Please see Figure 5 and Figure 6 , Figure 5 This is a perspective view of another embodiment of the ultra-wideband antenna according to this application. Figure 6 for Figure 5 A cross-sectional view of the ultra-wideband antenna along line segment BB. (See diagram below.) Figure 5 and Figure 6As shown, the ultra-wideband antenna 200 includes a first dielectric substrate 210, a main radiating patch 220, a parasitic radiating patch 230, an impedance matching patch 240, a second dielectric substrate 250, a metal ground 260, and a feed pad 270. The first dielectric substrate 210 has a first conductive via 70; the main radiating patch 220 is disposed on the upper surface 212 of the first dielectric substrate 210 and electrically connected to the first conductive via 70; the parasitic radiating patch 230 is disposed on the lower surface 214 or inside the first dielectric substrate 210; the impedance matching patch 240 and the parasitic radiating patch 230 are located on the same plane and electrically connected to the first conductive via 70, with the parasitic radiating patch 230 surrounding the impedance matching patch 240 and isolated from it; the second... The dielectric substrate 250 is provided with a second conductive via 80. The first dielectric substrate 210 is bonded to the upper surface 252 of the second dielectric substrate 250. The second conductive via 80 is electrically connected to the impedance matching patch 240. A metal ground 260 is provided on the lower surface 254 of the second dielectric substrate 250. The feed pad 270 and the metal ground 260 are located on the same plane and are electrically connected to the second conductive via 80. The metal ground 260 surrounds the feed pad 270 and is isolated from it. The feed pad 270 is provided with a feed point 272. The parasitic radiating patch 230 is configured to couple energy from the main radiating patch 220. The parasitic radiating patch 230 is configured to generate a notch frequency close to that generated by the main radiating patch 220 to broaden the bandwidth of the ultra-wideband antenna 200. It should be noted that since the first conductive via 70 and the second conductive via 80 are misaligned in the thickness direction T of the ultra-wideband antenna 200, therefore… Figure 6 The second conductive via 80 is drawn as a dashed line.

[0035] For more details, please see Figures 5 to 7 , Figure 7 for Figure 5 The image shows a top view of an ultra-wideband antenna. The first dielectric substrate 210 can be a flexible substrate or a rigid substrate; the main radiating patch 220 and the first conductive via 70 can be made of conductive metal, which is applied to the upper surface 212 of the first dielectric substrate 210 using a lamination or spraying process to form the main radiating patch 220; the first conductive via 70 is electrically connected to the main radiating patch 220 to serve as part of the antenna feed circuit.

[0036] Please see Figure 5 , Figure 6 and Figure 8 , Figure 8 for Figure 5A schematic diagram of an embodiment in which a parasitic radiation patch 230 and an impedance matching patch are provided on a first dielectric substrate. The parasitic radiation patch 230 and the impedance matching patch 240 may be made of conductive metal. The conductive metal is covered on the lower surface 214 of the first dielectric substrate 210 using a lamination or spraying process to form the parasitic radiation patch 230 and the impedance matching patch 240 (i.e., the parasitic radiation patch 230 and the impedance matching patch 240 are located on the same plane). The parasitic radiation patch 230 surrounds the impedance matching patch 240, and the parasitic radiation patch 230 is not connected to the impedance matching patch 240 (i.e., the parasitic radiation patch 230 and the impedance matching patch 240 are isolated from each other).

[0037] Please see Figure 5 , Figure 6 and Figure 9 , Figure 9 for Figure 5 The image shows a bottom view of an ultra-wideband antenna. The second dielectric substrate 250 can be a flexible substrate or a rigid substrate; the metal ground 260, the second conductive via 80, and the feed pad 270 can be made of conductive metal, which is applied to the lower surface 254 of the second dielectric substrate 250 using a lamination or spraying process to form the metal ground 260 and the feed pad 270 (i.e., the feed pad 270 and the metal ground 260 are on the same plane). The metal ground 260 surrounds the feed pad 270 and is not connected to the feed pad 270 (i.e., the metal ground 260 and the feed pad 270 are isolated from each other). The second conductive via 80 electrically connects the impedance matching patch 240 and the feed pad 270 as part of the antenna feed circuitry. The signal is input from the feed point 272 set by the feed pad 270, and transmitted to the main radiating patch 220 through the feed pad 270, the second conductive via 80, the impedance matching patch 240, and the first conductive via 70. This causes the main radiating patch 220 to generate a notch frequency corresponding to its equivalent resonant length (i.e., the notch frequency generated by the main radiating patch 220 depends on the equivalent resonant length of the main radiating patch 220) and radiate the signal outward. The parasitic radiating patch 230 couples energy from the main radiating patch 220 and generates a notch frequency corresponding to its equivalent resonant length (i.e., the notch frequency generated by the parasitic radiating patch 230 depends on the equivalent resonant length of the parasitic radiating patch 230). When the notch frequency generated by the parasitic radiating patch 230 is close to the notch frequency generated by the main radiating patch 220, the bandwidth of the ultra-wideband antenna 200 can be widened. Among them, the impedance matching patch 240 is used to match the impedance between the notch frequency generated by the parasitic radiation patch 230 and the notch frequency generated by the main radiation patch 220, and can also improve the coupling between the two notches, making the scattering parameters flatter.

[0038] It should be noted that the parasitic radiation patch 230 and the impedance matching patch 240 can be processed on the first dielectric substrate 210 or the second dielectric substrate 250, and then the first dielectric substrate 210 is pressed onto the upper surface 252 of the second dielectric substrate 250. When the first dielectric substrate 210 is a flexible substrate and the second dielectric substrate 250 is a rigid substrate, the high temperature during the pressing process will make the flexible substrate fluid, so that the parasitic radiation patch 230 and the impedance matching patch 240 are disposed inside the first dielectric substrate 210. When the first dielectric substrate 210 is a rigid substrate and the second dielectric substrate 250 is a flexible substrate, or both the first dielectric substrate 210 and the second dielectric substrate 250 are rigid substrates, the high temperature during the pressing process will not make the rigid substrate fluid, so that the parasitic radiation patch 230 and the impedance matching patch 240 are disposed on the lower surface 214 of the first dielectric substrate 210. When both the first dielectric substrate 210 and the second dielectric substrate 250 are flexible substrates, it is necessary to first determine whether the parasitic radiation patch 230 and the impedance matching patch 240 are processed on the first dielectric substrate 210 or the second dielectric substrate 250. When the parasitic radiation patch 230 and the impedance matching patch 240 are processed on the first dielectric substrate 210, the first dielectric substrate 210 is pressed onto the upper surface 252 of the second dielectric substrate 250, so that the parasitic radiation patch 230 and the impedance matching patch 240 are located on the lower surface 214 of the first dielectric substrate 210 and embedded inside the second dielectric substrate 250. When the parasitic radiation patch 230 and the impedance matching patch 240 are processed on the second dielectric substrate 250, the first dielectric substrate 210 is pressed onto the upper surface 252 of the second dielectric substrate 250, so that the parasitic radiation patch 230 and the impedance matching patch 240 are located on the upper surface 252 of the second dielectric substrate 250 and embedded inside the first dielectric substrate 210.

[0039] In one embodiment, please refer to Figure 6 , Figure 8 and Figure 9Since the first conductive via 70 and the second conductive via 80 are misaligned in the thickness direction T of the ultra-wideband antenna 200, an additional current path is added to the antenna feed line, effectively introducing some resistance and capacitance to better match the main radiating patch 220. It should be noted that the first conductive via 70 and the second conductive via 80 can also be aligned in the thickness direction T of the ultra-wideband antenna 200, depending on the impedance of the feed point 272; that is, the first conductive via 70 and the second conductive via 80 are spaced apart by a predetermined distance D2 in the horizontal direction H (i.e., a predetermined distance D2 between the center points of the first conductive via 70 and the second conductive via 80 in the horizontal direction H), and this predetermined distance D2 depends on the impedance of the feed point 272. In some embodiments, the relative positions of the first conductive via 70 and the second conductive via 80 on the horizontal plane depend on the impedance of the feed point 272. In addition, the different positions of the feed point 272 will also result in different relative positions of the first conductive via 70 and the second conductive via 80 in the thickness direction T of the ultra-wideband antenna 200.

[0040] In one embodiment, please refer to Figure 8 There is a gap between the parasitic radiation patch 230 and the impedance matching patch 240. The gap is an annular groove 90 surrounding the impedance matching patch 240. The annular groove 90 is used to increase the equivalent resonant length of the parasitic radiation patch 230 and can effectively reduce the size of the parasitic radiation patch 230, which is beneficial for miniaturization design.

[0041] In one embodiment, the main radiating patch 220, the parasitic radiating patch 230, the impedance matching patch 240, and the annular groove 90 have regular or irregular shapes. The regular shapes may be, but are not limited to, square, rectangular, circular, elliptical, or rhomboid, while the irregular shapes may be, but are not limited to, L-shaped, T-shaped, or I-shaped.

[0042] Please see Figure 10 and Figure 11 , Figure 10 The simulation diagram shows the scattering parameters of an existing single-patch antenna. Figure 11 for Figure 5 The simulation diagram of the scattering parameters of the ultra-wideband antenna is shown, in which... Figure 10 and Figure 11 The horizontal axis represents frequency, measured in gigahertz (GHz); the vertical axis represents scattering parameters, measured in decibels (dB). From Figure 10 and Figure 11 It can be seen that when the scattering parameter is -3dB, the bandwidth of a single patch antenna can be 1.07GHz (i.e., 7.81GHz to 8.88GHz), and the bandwidth of the ultra-wideband antenna 200 can be 1.48 GHz (i.e., 7.30GHz to 8.78GHz). Therefore, the ultra-wideband antenna 200 can extend the bandwidth by more than 40% compared to the single patch antenna.

[0043] Please see Figures 11 to 14 , Figure 12 for Figure 11 The stereo radiation pattern at an operating frequency of 7.3 GHz with a mid-scattering parameter of -3 dB. Figure 13 for Figure 11 The stereo radiation pattern with the operating frequency at the center of the band (8GHz). Figure 14 for Figure 11 The stereo radiation pattern at an operating frequency of 8.78 GHz with a mid-scattering parameter of -3 dB. Figures 11 to 14 It can be seen that the ultra-wideband antenna 200 has good consistency in radiation pattern across the entire high, medium and low frequency bands.

[0044] In summary, in this embodiment, the ultra-wideband antenna achieves dual resonance through a parasitic radiating patch in conjunction with the main radiating patch, thus broadening the antenna's bandwidth and overcoming the narrow bandwidth limitation of a single-pattern antenna. Furthermore, by adding an impedance matching patch placed within and isolated from the parasitic radiating patch on the feed line of the main radiating patch, the ultra-wideband antenna achieves impedance matching of the main radiating patch, improving the coupling between the notch filters generated by the parasitic and main radiating patches, and also achieving miniaturization of the parasitic radiating patch. Moreover, by using a metal component with a larger external dimension than the ultra-wideband antenna as the antenna reference ground, the overall thickness of the ultra-wideband antenna can be further reduced, simplifying the manufacturing process.

[0045] Although the components described above are included in the drawings of this application, it is not excluded that more additional components may be used to achieve better technical effects without departing from the spirit of the invention.

[0046] While the present invention has been described using the above embodiments, it should be noted that these descriptions are not intended to limit the invention. Rather, this invention encompasses modifications and similar arrangements that are obvious to those skilled in the art. Therefore, the scope of the claims should be interpreted in the broadest possible sense to include all obvious modifications and similar arrangements.

Claims

1. An ultra-wideband antenna, disposed in a communication device including a metal component, characterized in that, The ultra-wideband antenna comprises: a first dielectric substrate provided with a first conductive via hole; a main radiation patch arranged on an upper surface of the first dielectric substrate and electrically connected to the first conductive via hole; a parasitic radiation patch arranged on a lower surface of the first dielectric substrate; and an impedance matching patch arranged in the same plane as the parasitic radiation patch and electrically connected to the first conductive via hole, the parasitic radiation patch surrounding and being isolated from the impedance matching patch, the impedance matching patch being provided with a feeding point; wherein the parasitic radiation patch is configured to couple energy from the main radiation patch, the parasitic radiation patch being configured to have a notch frequency close to a notch frequency generated by the main radiation patch to expand the bandwidth of the frequency band; wherein the feeding point is horizontally spaced apart from the first conductive via hole by a predetermined distance, the predetermined distance depending on the impedance of the ultra-wideband antenna; wherein a gap is provided between the parasitic radiation patch and the impedance matching patch, the gap being an annular slot surrounding the impedance matching patch.

2. The ultra-wideband antenna of Claim 1, wherein, The impedance matching patch is used to match the impedance between the notch frequency generated by the parasitic radiation patch and the notch frequency generated by the main radiation patch.

3. The ultra-wideband antenna of Claim 1, wherein, The main radiation patch, the parasitic radiation patch, the impedance matching patch and the annular slot have regular or irregular shapes.

4. The ultra-wideband antenna of Claim 3, wherein, The regular shape is a square, a rectangle, a circle, an ellipse or a diamond; the irregular shape is an L shape, a T shape or a G shape.

5. The ultra-wideband antenna of Claim 1, wherein, The notch frequency generated by the parasitic radiation patch depends on the equivalent resonant length of the parasitic radiation patch, and the notch frequency generated by the main radiation patch depends on the equivalent resonant length of the main radiation patch.

6. The ultra-wideband antenna of Claim 1, wherein, The metal member of the communication device is larger than the size of the ultra-wideband antenna and serves as an antenna reference ground.

7. An ultra-wideband antenna, comprising: Comprise: a first dielectric substrate provided with a first conductive via hole; a main radiation patch arranged on an upper surface of the first dielectric substrate and electrically connected to the first conductive via hole; a parasitic radiation patch arranged on a lower surface or inside the first dielectric substrate; an impedance matching patch arranged in the same plane as the parasitic radiation patch and electrically connected to the first conductive via hole, the parasitic radiation patch surrounding and being isolated from the impedance matching patch; a second dielectric substrate provided with a second conductive via hole, the first dielectric substrate being bonded to an upper surface of the second dielectric substrate, the second conductive via hole being electrically connected to the impedance matching patch; a metal ground arranged on a lower surface of the second dielectric substrate; and a feeding pad arranged in the same plane as the metal ground and electrically connected to the second conductive via hole, the metal ground surrounding and being isolated from the feeding pad, the feeding pad being provided with a feeding point; wherein the parasitic radiation patch is configured to couple energy from the main radiation patch, the parasitic radiation patch being configured to have a notch frequency close to a notch frequency generated by the main radiation patch to expand the bandwidth of the frequency band; ​ The first conductive via and the second conductive via are spaced apart by a predetermined distance in the horizontal direction, and the predetermined distance depends on the impedance of the feed point; The parasitic radiation patch and the impedance matching patch are spaced apart by a gap, which is an annular groove surrounding the impedance matching patch.

8. The ultra-wideband antenna of Claim 7, wherein, The impedance matching patch is used to match the impedance between the notch frequency generated by the parasitic radiation patch and the notch frequency generated by the main radiation patch.

9. The ultra-wideband antenna of Claim 7, wherein, The main radiating patch, the parasitic radiating patch, the impedance matching patch, and the annular groove have regular or irregular shapes.

10. The ultra-wideband antenna of Claim 9, wherein, The regular shapes are squares, rectangles, circles, ellipses, or rhombuses; the irregular shapes are L-shaped, T-shaped, or I-shaped.

11. The ultra-wideband antenna of Claim 7, wherein, The notch frequency generated by the parasitic radiation patch depends on the equivalent resonant length of the parasitic radiation patch, and the notch frequency generated by the main radiation patch depends on the equivalent resonant length of the main radiation patch.

Images