Apparatus for processing substrates

Abstract

An apparatus for processing a substrate is provided. The apparatus includes: a first processing unit having a first processing container and a first supporting unit and configured to process the substrate; a second processing unit having a second processing container and a second supporting unit and configured to process the substrate; and a discharge unit configured to discharge a first internal space of the first processing container and a second internal space of the second processing container, wherein the first processing unit and the second processing unit are arranged in a row, wherein the discharge unit includes an integrated duct, a first discharge pipe, and a second discharge pipe, wherein the integrated duct includes a first wall member configured to separate discharge paths in the integrated duct, the first wall member starting between a first position and a second position and extending along a discharge direction of the discharge path, and wherein the first wall member separates a first discharge path arranged to communicate with the first discharge pipe from a second discharge path arranged to communicate with the second discharge pipe.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to and the benefit of Korean Patent Application No. 10-2020-0188422 filed in the Korean Intellectual Property Office on December 30, 2020, the entire contents of which are incorporated herein by reference. Technical Field

[0003] The present invention relates to an apparatus for processing a substrate, and more particularly, to an apparatus for processing a substrate by supplying liquid to a rotating substrate. Background Art

[0004] To manufacture semiconductor devices, various processes such as cleaning, deposition, photolithography, etching, and ion implantation are performed. Among these processes, the photolithography process includes a coating process in which a photosensitive liquid such as photoresist is applied to the surface of a substrate to form a film, an exposure process in which a circuit pattern is transferred to the film formed on the substrate, and a development process in which the film formed on the substrate is selectively removed from the exposed area or an area opposite thereto.

[0005] A substrate processing apparatus used in a coating process for coating a photosensitive liquid such as photoresist to form a film includes a cup-shaped processing container having a processing space, a supporting unit for supporting and rotating a substrate W in the processing space, and a nozzle for supplying photoresist to the substrate placed on the supporting unit.

[0006] An exhaust unit is coupled to the bottom wall of the processing vessel to exhaust the atmosphere in the processing space. Typically, the exhaust unit includes an integrated pipeline connecting multiple exhaust pipes, each of which is connected to a plurality of processing vessels. The integrated pipeline simultaneously exhausts the multiple processing spaces. An exhaust pump is disposed within the integrated pipeline.

[0007] In this case, the discharge amount through the discharge pipe connected to the exhaust pump (which is connected to the integrated pipe) and the discharge amount through the discharge pipe connected to the exhaust pump remotely differ from each other, resulting in a difference in discharge amount, which has an impact on the uniformity of the thickness of the photoresist coating film between regions of the substrate. In addition, the atmosphere is not discharged at a predetermined flow rate from the processing space of the processing container connected to the near discharge pipe or the remote discharge pipe. Summary of the Invention

[0008] An object of the present invention is to provide an apparatus for processing a substrate, which can improve substrate processing efficiency.

[0009] An object of the present invention is to provide an apparatus for processing a substrate, which is capable of smoothly exhausting the atmosphere in a processing space while processing the substrate by supplying a processing liquid to the rotating substrate in the internal space.

[0010] An object of the present invention is to provide an apparatus for processing substrates capable of providing a uniform thickness of a liquid film on a plurality of substrates provided to a plurality of processing spaces when forming a liquid film on the substrate by supplying a processing liquid to a rotating substrate.

[0011] The objects of the present invention are not limited to the above-described objects, and objects not mentioned above will become apparent to those skilled in the art from the following description.

[0012] An exemplary embodiment of the present invention provides an apparatus for processing a substrate. According to the exemplary embodiment, the apparatus for processing a substrate includes: a first processing unit, the first processing unit being configured to have a first processing container and a first supporting unit, and being configured to process a substrate, the first processing container having a first internal space therein, the first supporting unit supporting and rotating the substrate in the first internal space; a second processing unit, the second processing unit being configured to have a second processing container and a second supporting unit, and being configured to process a substrate, the second processing container having a second internal space therein, the second supporting unit supporting and rotating the substrate in the second internal space; and a discharge unit, the discharge unit being configured to discharge the first internal space and the second internal space, wherein the first processing unit and the second processing unit are arranged in a row, wherein the discharge unit includes an integrated pipeline, the integrated pipeline being arranged based on a unit arrangement direction (unit arrangement direction) in which the first processing unit and the second processing unit are arranged. direction) located on one side of the unit arrangement direction; a first discharge pipe, the first discharge pipe being configured to have a first discharge port for introducing the atmosphere of the first internal space, and to discharge the atmosphere introduced through the first discharge port to the integrated pipe; and a second discharge pipe being configured to have a second discharge port for introducing the atmosphere of the second internal space, and to discharge the atmosphere introduced through the second discharge port to the integrated pipe, wherein the integrated pipe includes a first wall member, the first wall member being configured to separate / partition a discharge path in the integrated pipe, and wherein the first wall member starts between a first position and a second position and extends along a discharge direction of the discharge path, the first discharge pipe being connected to the integrated pipe in the first position, and the second discharge pipe being connected to the integrated pipe in the second position, and the first wall member separating a first discharge path set to circulate with the first discharge pipe and a second discharge path set to circulate with the second discharge pipe.

[0013] In an exemplary embodiment, the first wall member may extend downstream according to the discharge direction of the first position.

[0014] In an exemplary embodiment, at an end portion of the first wall member, a cross-sectional area of the first discharge path and a cross-sectional area of the second discharge path may be set to be equal.

[0015] In an exemplary embodiment, the device may further include a third processing unit, which is configured to have a third processing container and a third supporting unit, and is configured to process the substrate, the third processing container having a third internal space therein, and the third supporting unit supporting and rotating the substrate in the third internal space, wherein the third processing unit is arranged in a row with the first processing unit and the second processing unit, wherein the discharge unit also includes a third discharge pipe, which is configured to further discharge the third internal space, has a third discharge port for introducing the atmosphere into the third internal space, and discharges the atmosphere introduced through the third discharge port into the integrated pipeline, wherein the integrated pipeline further includes a second wall member, which is configured to separate the discharge path in the integrated pipeline, and wherein the second wall member starts between the second position and the third position and extends along the discharge direction of the discharge path, in the third position the second discharge pipe is connected to the integrated pipeline, and the second wall member separates the third discharge path that is set to flow with the second discharge pipe and the third discharge pipe.

[0016] In an exemplary embodiment, the first wall member and the second wall member may extend downstream according to the discharge direction of the first position.

[0017] In an exemplary embodiment, at ends of the first wall member and the second wall member, cross-sectional areas of the first discharge path, the second discharge path, and the third discharge path may be set to be equal.

[0018] In an exemplary embodiment, the first exhaust pipe may be coupled to a bottom wall of the first process container, and the second exhaust pipe may be coupled to a bottom wall of the second process container.

[0019] In an exemplary embodiment, the apparatus may further include a liquid supply unit configured to supply the processing liquid onto the substrate supported by the first supporting unit or the second supporting unit.

[0020] In an exemplary embodiment, the pressure relief member is disposed downstream of the first location of the integrated conduit.

[0021] In an exemplary embodiment, the apparatus may further include a liquid supply unit configured to spray a processing liquid onto a substrate, wherein the liquid supply unit may include: a nozzle; and a nozzle driver configured to move the nozzle to a first process position facing the first supporting unit or a second process position facing the second supporting unit, so that the nozzle sprays the liquid onto a substrate selected from among the substrate supported by the first supporting unit and the substrate supported by the second supporting unit.

[0022] In an exemplary embodiment, the processing liquid may be photoresist.

[0023] In an exemplary embodiment, the device may further include a first fan filter unit, which is located above the first processing unit and is configured to include a fan for introducing external air into the first internal space and a filter for filtering the external air; and a second fan filter unit, which is located above the second processing unit and is configured to include a fan for introducing external air into the second internal space and a filter for filtering the external air.

[0024] In an exemplary embodiment, the first exhaust pipe and the second exhaust pipe may be sequentially arranged along an arrangement direction of the first and second treatment units.

[0025] In an exemplary embodiment, the first discharge pipe, the second discharge pipe, and the third discharge pipe may be sequentially arranged along an arrangement direction of the first treatment unit, the second treatment unit, and the third treatment unit.

[0026] An exemplary embodiment of the present invention provides an apparatus for processing a substrate. The apparatus may include a first processing unit configured to include a first processing container and a first supporting unit, and configured to process a substrate, the first processing container having a first internal space therein, the first supporting unit supporting and rotating the substrate in the first internal space; a second processing unit configured to include a second processing container and a second supporting unit, and configured to process a substrate, the second processing container having a second internal space therein, the second supporting unit supporting and rotating the substrate in the second internal space; and a third processing unit configured to include a third processing container and a third supporting unit, and configured to process a substrate, the third processing container having a second internal space therein. There is a third internal space, a third supporting unit supports and rotates the substrate in the third internal space; and a discharge unit configured to discharge the first internal space, the second internal space and the third internal space, wherein the first processing unit, the second processing unit and the third processing unit are arranged in a row, wherein the discharge unit includes an integrated pipeline, which is located on one side of the unit arrangement direction based on the unit arrangement direction of the first processing unit, the second processing unit and the third processing unit; a first discharge pipe, which is coupled to the bottom wall of the first processing container, and the first discharge pipe is configured to have a first discharge port for introducing the atmosphere of the first internal space, and is configured to discharge the atmosphere of the first processing unit through the first discharge port. The atmosphere introduced is discharged into the integrated pipe; a second discharge pipe, which is coupled to the bottom wall of the second processing container, and the second discharge pipe is configured to have a second discharge port for introducing the atmosphere of the second internal space, and is configured to discharge the atmosphere introduced through the second discharge port into the integrated pipe; and a third discharge pipe, which is coupled to the bottom wall of the third processing container, and the third discharge pipe is configured to have a third discharge port for introducing the atmosphere of the third internal space, and is configured to discharge the atmosphere introduced through the third discharge port into the integrated pipe, wherein the integrated pipe includes a first wall member and a second wall member configured to separate the discharge path in the integrated pipe, wherein the first wall member is between the first position and the second position Starting and extending along the discharge direction of the discharge path, in a first position the first discharge pipe is connected to the integrated pipe, and in a second position the second discharge pipe is connected to the integrated pipe, and the first wall member separates the first discharge path set to flow with the first discharge pipe and the second discharge path set to flow with the second discharge pipe, wherein the second wall member starts and extends along the discharge direction of the discharge path between the second position and a third position, in the third position the second discharge pipe is connected to the integrated pipe, and the second wall member separates the third discharge path set to flow with the second discharge pipe and the third discharge pipe, and wherein the first wall member and the second wall member extend downstream according to the discharge direction of the first position.

[0027] In an exemplary embodiment, at ends of the first wall member and the second wall member, cross-sectional areas of the first discharge path, the second discharge path, and the third discharge path may be set to be equal.

[0028] In an exemplary embodiment, the apparatus may further include a liquid supply unit configured to spray a processing liquid onto a substrate, wherein the liquid supply unit may include: a nozzle; and a nozzle driver configured to move the nozzle to a first process position facing the first supporting unit, a second process position facing the second supporting unit, or a third process position facing the third supporting unit, so that the nozzle sprays the liquid onto a substrate selected from among the substrate supported by the first supporting unit, the substrate supported by the second supporting unit, and the substrate supported by the third supporting unit.

[0029] In an exemplary embodiment, the processing liquid may be photoresist.

[0030] In an exemplary embodiment, the device may further include a first fan filter unit, which is located on the first processing unit and is configured to include a fan for introducing external air into the first internal space and a filter for filtering the external air; a second fan filter unit, which is located on the second processing unit and is configured to include a fan for introducing external air into the second internal space and a filter for filtering the external air; and a third fan filter unit, which is located on the third processing unit and is configured to include a fan for introducing external air into the third internal space and a filter for filtering the external air.

[0031] In an exemplary embodiment, the first discharge pipe, the second discharge pipe, and the third discharge pipe may be sequentially arranged along an arrangement direction of the first treatment unit, the second treatment unit, and the third treatment unit.

[0032] According to the exemplary embodiments of the present invention, substrate processing efficiency can be improved.

[0033] According to the exemplary embodiment of the present invention, it is possible to smoothly exhaust the atmosphere in the processing space while processing a substrate by supplying a processing liquid to the rotating substrate in the internal space.

[0034] According to the exemplary embodiment of the present invention, it is possible to uniformly provide the thickness of the liquid film on a plurality of substrates provided to a plurality of processing spaces when forming the liquid film on the substrate by supplying the processing liquid to the rotating substrate.

[0035] The effects of the present invention are not limited to the aforementioned effects, and those skilled in the art will clearly understand unmentioned effects from this specification and the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] Figure 1 FIG. 1 is a perspective view schematically showing a substrate processing apparatus according to an exemplary embodiment of the present invention.

[0037] Figure 2 To show Figure 1 A cross-sectional view of a substrate processing device including a coating block or a developing block.

[0038] Figure 3 for Figure 1 A plan view of a substrate processing apparatus.

[0039] Figure 4 For schematic illustration Figure 3 Plan view of the conveying robot.

[0040] Figure 5 For schematic illustration Figure 3 A plan view of an embodiment of a thermal processing chamber.

[0041] Figure 6 for Figure 3 Front view of the heat treatment chamber.

[0042] Figure 7 For schematic illustration Figure 1 A diagram of an embodiment of a liquid processing chamber in a substrate processing apparatus.

[0043] Figure 8 for Figure 7 A plan view of the liquid processing chamber.

[0044] Figure 9 For schematic illustration Figure 7 FIG. 1 is a diagram of a discharge unit of a liquid processing chamber.

[0045] Figure 10 To show that Figure 7 A pattern of atmosphere flow when processing a substrate in a liquid processing chamber.

[0046] Figure 11 is a graph showing the flow of atmosphere through the exhaust unit of a comparative example compared to the present invention.

[0047] Figure 12 For the Figure 7 The discharge volume at each position of the discharge pipe when processing a substrate in a liquid processing chamber is Figure 11 A comparative example is provided for comparison. DETAILED DESCRIPTION

[0048] Hereinafter, exemplary embodiments of the present invention will be described more fully below with reference to the accompanying drawings, which illustrate exemplary embodiments of the present invention. However, the present invention may be implemented in a variety of ways and is not limited to the following exemplary embodiments. In the following description of the present invention, detailed descriptions of known functions and configurations incorporated herein are omitted to avoid obscuring the subject matter of the present invention. In addition, throughout the drawings, the same reference numerals are used for components having similar functions and operations.

[0049] Unless explicitly described to the contrary, the term "comprising" any component will be understood to mean including the stated elements but not excluding any other elements. In this application, it should be understood that the term "including" or "having" indicates the presence of the features, quantities, steps, operations, components, parts, or combinations thereof described in this specification, but does not exclude the possibility of the pre-existence or addition of one or more features, quantities, steps, operations, components, parts, or combinations thereof.

[0050] Singular expressions used herein include plural expressions unless they have clearly opposite meanings in the context. Therefore, the shapes, sizes, etc. of elements in the drawings may be exaggerated for clearer description.

[0051] Terms such as first and second are used to describe various components, but the components are not limited by these terms. These terms are only used to distinguish one component from another. For example, a first component can be named a second component, and similarly, a second component can be named a first component without departing from the scope of the present invention.

[0052] It should be understood that when a component is described as being “connected to” or “approaching” another component, the component may be directly connected to or approaching the other component, or a third component may exist between the component and the other component. Conversely, it should be understood that when a component is described as being “directly connected to”, “directly approaching”, or “contacting” another component, no component exists between the component and the other component. At the same time, other expressions describing the relationship between components, such as “between” and “directly between”, or “adjacent to” and “directly adjacent to” should be interpreted similarly.

[0053] Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meanings as those commonly understood by those skilled in the art. Terms defined in common dictionaries should be interpreted as having the same meanings as in the context of the relevant technology and should not be interpreted as conceptual or overly formal meanings unless explicitly defined in this application.

[0054] The device of the exemplary embodiment can be used to perform a photolithography process on a circular substrate. In particular, the device of the exemplary embodiment is connected to an exposure device and can be used to perform a coating process of coating a photoresist on a substrate. However, the technical concept of the present invention is not limited thereto, and other processing liquids other than photoresist can be supplied to the rotating substrate and applied to various types of processes. For example, the processing liquid can be a developer solution, a chemical, a cleaning solution, an organic solvent, etc. In addition, the technical concept of the present invention can even be applied to such a process, that is, in this process, the substrate is rotated when the space where the substrate is disposed is discharged without supplying a processing liquid.

[0055] In the following, reference will be made to Figures 1 to 12 Exemplary embodiments of the present invention are described.

[0056] Figure 1 FIG2 is a perspective view schematically showing a substrate processing apparatus according to an exemplary embodiment of the present invention. Figure 2 To show Figure 1 A cross-sectional view of a substrate processing apparatus including a coating block or a developing block, and Figure 3 for Figure 1 A plan view of a substrate processing apparatus.

[0057] refer to Figures 1 to 3 According to an exemplary embodiment of the present invention, a substrate processing apparatus 10 includes an index module 100, a processing module 300, and an interface module 500. According to the exemplary embodiment, the index module 100, the processing module 300, and the interface module 500 are sequentially arranged in a row. Hereinafter, a direction in which the index module 100, the processing module 300, and the interface module 500 are arranged is defined as a first direction 12, a direction perpendicular to the first direction 12 when viewed from above is defined as a second direction 14, and a direction perpendicular to both the first direction 12 and the second direction 14 is defined as a third direction 16.

[0058] The index module 100 transfers substrates W from a container F receiving substrates W to the processing module 300 and receives processed substrates W in the container F. The longitudinal direction of the index module 100 is set to the second direction 14. The index module 100 has a load port 110 and an index frame 130. The load port 110 is located on the opposite side of the processing module 300 relative to the index frame 130. The container F receiving the substrates W is placed on the load port 110. A plurality of load ports 110 may be provided, and the plurality of load ports 110 may be arranged along the second direction 14.

[0059] A closed container F, such as a front open unified pod (FOUP), can be used as the container F. The container F can be placed on a transport device (not shown) such as an overhead conveyor, an overhead transporter, or an automated guided vehicle, or placed on the load port 110 by an operator.

[0060] The index robot 132 is provided inside the index frame 130. In the index frame 130, a guide rail 136 is provided in which the longitudinal direction is set as the second direction 14, and the index robot 132 can be provided to be movable on the guide rail 136. The index robot 132 includes a hand on which the substrate W is placed, and the hand can be provided to move forward and backward, rotate on an axis in the third direction 16, and be movable in the third direction 16.

[0061] The processing module 300 can perform a coating process and a developing process on the substrate W. The processing module 300 can receive the substrate W received in the container F to perform a substrate processing process. The processing module 300 has a coating block (COT) 300a and a developing block (DEV) 300b. The coating block 300a performs a coating process on the substrate W, and the developing block 300b performs a developing process on the substrate W. A plurality of coating blocks 300a are provided and the plurality of coating blocks are stacked on each other. A plurality of developing blocks 300b are provided and the plurality of developing blocks are stacked on each other. According to Figure 1 In an exemplary embodiment, two coating blocks 300a and two developing blocks 300b are provided. The coating block 300a may be provided below the developing block 300b. According to an exemplary embodiment, the two coating blocks 300a may perform the same process as each other and may be provided with the same structure as each other. In addition, the two developing blocks 300b may perform the same process as each other and may be provided with the same structure as each other.

[0062] refer to Figure 3 The coating block 300a includes a heat treatment chamber 320, a transport chamber 350, a liquid treatment chamber 360, and buffer chambers 312 and 316. The heat treatment chamber 320 performs a heat treatment process on the substrate W. The heat treatment process may include a cooling process and a heating process. The liquid treatment chamber 360 supplies liquid onto the substrate W to form a liquid film. The liquid film may be a photoresist film or an anti-reflective layer. The transport chamber 350 transports the substrate W between the heat treatment chamber 320 and the liquid treatment chamber 360 in the coating block 300a.

[0063] The transport chamber 350 is arranged with a longitudinal direction parallel to the first direction 12. The transport chamber 350 is provided with a transport robot 352. The transport robot 352 transports substrates between the thermal treatment chamber 320, the liquid treatment chamber 360, and the buffer chambers 312 and 316. According to an exemplary embodiment, the transport robot 352 has a hand on which the substrate W is placed, and the hand can be arranged to move forward and backward, rotate about an axis in the third direction 16, and be movable in the third direction 16. In the transport chamber 350, a guide rail 356 is provided, the longitudinal direction of which is arranged parallel to the first direction 12, and the transport robot 352 can be arranged to be movable on the guide rail 356.

[0064] Figure 4 FIG is a diagram showing an embodiment of the hand 354 of the transfer robot 352. Figure 4 The hand 354 includes a base 354a and a supporting protrusion 354b. The base 354a may have an annular shape in which a portion of the circumference is curved. The base 354a has an inner diameter that is larger than the diameter of the substrate W. The supporting protrusion 354b extends from the base 354a to the inner side thereof. A plurality of supporting protrusions 354b are provided, and the plurality of supporting protrusions support the edge region of the substrate W. According to an exemplary embodiment, four supporting protrusions 354b may be provided at equal intervals.

[0065] A plurality of heat treatment chambers 320 are provided. The heat treatment chambers 320 are arranged along the first direction 12. The heat treatment chambers 320 are located on one side of the transport chamber 350.

[0066] Figure 5 For schematic illustration Figure 4 A plan view of an embodiment of a thermal processing chamber, and Figure 6 for Figure 5 Front view of the heat treatment chamber.

[0067] refer to Figure 5 and Figure 6 The heat treatment chamber 320 includes a shell 321 , a cooling unit 322 , a heating unit 323 and a conveying plate 324 .

[0068] The housing 321 is configured to be substantially rectangular. A transport port (not shown) is formed on a side wall of the housing 321, through which the substrate W is brought in or out. The transport port can remain open. Optionally, a door (not shown) can be provided to open or close the transport port. The cooling unit 322, the heating unit 323, and the conveying plate 324 are disposed in the housing 321. The cooling unit 322 and the heating unit 323 are arranged along the second direction 14. According to an exemplary embodiment, the cooling unit 322 can be positioned closer to the conveying chamber 350 than the heating unit 323.

[0069] The cooling unit 322 includes a cooling plate 322a. When viewed from the top, the cooling plate 322a may have a generally circular shape. The cooling plate 322a is provided with a cooling member 322b. According to an exemplary embodiment, the cooling member 322b is formed inside the cooling plate 322a and may be provided as a cooling channel through which a cooling fluid flows.

[0070] The heating unit 323 includes a heating plate 323a, a cover 323c, and a heater 323b. When viewed from the top, the heating plate 323a may have a generally circular shape. The heating plate 323a has a larger diameter than the substrate W. The heating plate 323a is provided with a heater 323b. The heater 323b may be configured as a resistor to which an electric current is applied. The heating plate 323a is provided with lift pins 323e, which can be driven vertically along the third direction 16. The lift pins 323e receive the substrate W from a transport device outside the heating unit 323 to place the substrate W on the heating plate 323a or to lift the substrate W from the heating plate 323a to transfer the substrate W to a transport device outside the heating unit 323. According to an exemplary embodiment, three lift pins 323e may be provided. The cover 323c has a space therein with an open lower portion.

[0071] The cover 323c is positioned on the heating plate 323a and is moved in the vertical direction by the driver 3236d. The cover 323c is moved so that a space formed by the cover 323c and the heating plate 323a is provided as a heating space for heating the substrate W.

[0072] The conveyor plate 324 is configured to be roughly disk-shaped and has a diameter corresponding to that of the substrates W. Notches 324b are formed on the edge of the conveyor plate 324. The notches 324b may have a shape corresponding to the protrusions 3543 formed on the hand 354 of the conveying robot 352. Furthermore, the notches 324b are configured to correspond in number to the protrusions 3543 formed on the hand 354 and are formed at positions corresponding to the protrusions 3543. When the top and bottom positions of the hand 354 and the conveyor plate 324 are changed at a position where the hand 354 and the conveyor plate 324 are vertically aligned, the substrates W are transferred between the hand 354 and the conveyor plate 324. The conveyor plate 324 is mounted on guide rails 324d and can be moved along the guide rails 324d between the first area 3212 and the second area 3214 via a driver 324c. The conveyor plate 324 is provided with a plurality of slit-shaped guide grooves 324a. The guide grooves 324a extend from the end of the conveying plate 324 to the interior of the conveying plate 324. The longitudinal direction of the guide grooves 324a is arranged along the second direction 14, and the guide grooves 324a are positioned to be spaced apart from each other along the first direction. The guide grooves 324a prevent the conveying plate 324 and the lifting pins 323e from interfering with each other when the substrate W is transferred between the conveying plate 324 and the heating unit 323.

[0073] When the conveying plate 324 on which the substrate W is placed contacts the cooling plate 322 a, cooling of the substrate W is performed. The conveying plate 324 is provided with a material having high thermal conductivity so that heat transfer between the cooling plate 322 a and the substrate W is performed well. According to an exemplary embodiment, the conveying plate 324 is provided with a metal material.

[0074] Some of the heating units of the heat treatment chamber 320 may supply gas to improve adhesion of the photoresist on the substrate while heating the substrate W. According to an exemplary embodiment, the gas may be hexamethyldisilane (HMDS) gas.

[0075] A plurality of liquid processing chambers 360 are provided. Some of the liquid processing chambers 360 can be arranged to be stacked on each other. The liquid processing chambers 360 are arranged on one side of the transport chamber 350. The liquid processing chambers 360 are arranged in parallel along the first direction 12. Some of the liquid processing chambers 360 are arranged at a position adjacent to the index module 100. Hereinafter, the liquid processing chambers 360 positioned adjacent to the index module 100 are referred to as front liquid processing chambers 362. Some of the liquid processing chambers 360 are arranged at a position adjacent to the interface module 500. Hereinafter, the liquid processing chambers 360 positioned adjacent to the interface module 500 are referred to as rear liquid processing chambers 364.

[0076] The front liquid processing chamber 362 applies a first liquid to the substrate W, and the rear liquid processing chamber 364 applies a second liquid to the substrate W. The first liquid and the second liquid can be different types of liquids. According to an exemplary embodiment, the first liquid is an anti-reflective film, and the second liquid is a photoresist. The photoresist can be applied to the substrate W coated with the anti-reflective film. Optionally, the first liquid can be a photoresist, and the second liquid can be an anti-reflective film. In this case, the anti-reflective film can be applied to the substrate W coated with the photoresist. Optionally, the first liquid and the second liquid are the same type of liquid, and both are photoresists.

[0077] The developing block 300b has the same structure as the coating block 300a, and a liquid processing chamber is provided to the developing block 300b to supply a developer onto the substrate.

[0078] The interface module 500 connects the processing module 300 with the external exposure device 700. The interface module 500 has an interface frame 510, an additional process chamber 520, an interface buffer 530, and an interface robot 550.

[0079] A fan filter unit may be provided at the upper end of the interface frame 510 to form a descending atmosphere therein. An additional process chamber 520, an interface buffer 530, and an interface robot 550 are provided within the interface frame 510. The additional process chamber 520 may perform a predetermined additional process before the substrate W is moved into the exposure device 700 after the process in the coating block 300a is completed. Optionally, the additional process chamber 520 may perform a predetermined additional process before the substrate W is moved into the developing block 300b after the process in the exposure device 700 is completed. According to an exemplary embodiment, the additional process may be an edge exposure process for exposing an edge area of the substrate W, an upper surface cleaning process for cleaning the upper surface of the substrate W, or a lower surface cleaning process for cleaning the lower surface of the substrate W. A plurality of additional process chambers 520 are provided, and the plurality of additional process chambers are arranged to be stacked one upon another. All of the additional process chambers 520 may be configured to perform the same process. Optionally, some of the additional process chambers 520 may be configured to perform different processes.

[0080] The interface buffer 530 provides a space in which the substrate W to be transported between the coating block 300a, the additional process chamber 520, the exposure device 700, and the developing block 300b is temporarily placed during transport. A plurality of interface buffers 530 are provided, and the plurality of interface buffers 530 can be arranged to be stacked on each other.

[0081] According to example embodiments, based on the extension in the longitudinal direction of the transfer chamber 350 , the additional process chamber 520 may be disposed on one side surface, and the interface buffer 530 may be disposed on the other side surface.

[0082] The interface robot 550 transports substrates W between the coating block 300a, the additional process chamber 520, the exposure device 700, and the development block 300b. The interface robot 550 may include a transport arm for transporting substrates W. The interface robot 550 may be provided with one or more robots. According to an exemplary embodiment, the interface robot 550 includes a first robot 552 and a second robot 554. The first robot 552 transports substrates W between the coating block 300a, the additional process chamber 520, and the interface buffer 530. The second robot 554 transports substrates W between the interface buffer 530 and the exposure device 700. The second robot 554 may also be configured to transport substrates W between the interface buffer 530 and the development block 300b.

[0083] Each of the first robot 552 and the second robot 554 includes a hand on which the substrate W is placed, and the hand may be configured to move forward and backward, rotate on an axis in the third direction 16 , and be movable in the third direction 16 .

[0084] The structure of the liquid processing chamber will be described in detail below. The following description will be based on a liquid processing chamber located in a coating block. Furthermore, the liquid processing chamber will be described using a chamber for coating photoresist onto a substrate W as an example. However, the liquid processing chamber may also be a chamber for forming a film, such as a protective film or an anti-reflective film, on the substrate W. Furthermore, the liquid processing chamber may be a chamber for supplying developer to the substrate W to develop the substrate W.

[0085] Figure 7 FIG. 4 is a cross-sectional view showing an embodiment of a liquid processing chamber for liquid-processing a substrate W by supplying a processing liquid to the substrate W, and FIG. Figure 8 for Figure 7 A plan view of the liquid processing chamber.

[0086] refer to Figure 7 and Figure 8 The liquid processing chamber 1000 includes a housing 1100 , a first processing unit 1201 a , a second processing unit 1201 b , a third processing unit 1201 c , a liquid supply unit 1400 , a discharge unit 1600 , and a controller 1800 .

[0087] The housing 1100 is configured in a rectangular column shape having an interior space. Openings 1101a, 1101b, and 1101c are formed in one side of the housing 1100. The openings 1101a, 1101b, and 1101c function as passages through which substrates W are carried in or out. The openings 1101a, 1101b, and 1101c are provided with doors 1103a, 1103b, and 1103c, and the doors 1103a, 1103b, and 1103c open or close the openings 1101a, 1101b, and 1101c.

[0088] Fan filter units 1130a, 1130b, and 1130c are provided on the upper wall of the housing 1100 for supplying a descending atmosphere to the interior space. The fan filter units 1130a, 1130b, and 1130c include fans for introducing external atmosphere into the interior space and filters for filtering the external atmosphere. The fan filter units 1130a, 1130b, and 1130c are provided on the first, second, and third processing containers 1220a, 1220b, and 1220c, respectively.

[0089] In the internal space of the housing 1100, a first processing unit 1201a, a second processing unit 1201b, and a third processing unit 1201c are provided. The first processing unit 1201a, the second processing unit 1201b, and the third processing unit 1201c are arranged along one direction. Hereinafter, the direction in which the first processing unit 1201a, the second processing unit 1201b, and the third processing unit 1201c are arranged is referred to as a unit arrangement direction, and is Figure 8 The X-axis direction is shown in the figure.

[0090] The first processing unit 1201 a includes a first processing container 1220 a and a first supporting unit 1240 a .

[0091] The first processing container 1220a has a first inner space 1222a. The first inner space 1222a is provided so that an upper portion thereof is open.

[0092] The first support unit 1240a supports the substrate W in the first interior space 1222a of the first processing container 1220a. The first support unit 1240a includes a first support plate 1242a, a first drive shaft 1244a, and a first driver 1246a. The first support plate 1242a has a circular upper surface. The first support plate 1242a has a diameter smaller than that of the substrate W. The first support plate 1242a is configured to support the substrate W using vacuum pressure. Optionally, the first support plate 1242a may include a mechanical clamping structure for supporting the substrate W. The first drive shaft 1244a is coupled to the center of the lower surface of the first support plate 1242a, and a first driver 1246a for providing rotational force to the first drive shaft 1244a is provided in the first drive shaft 1244a. The first driver 1246a may be a motor.

[0093] The second processing unit 1201b includes a second processing container 1220b and a second supporting unit 1240b, and the second supporting unit 1240b includes a second supporting plate 1242b, a second driving shaft 1244b, and a second driver 1246b. The second processing container 1220b and the second supporting unit 1240b have substantially the same structure as the first processing container 1220a and the first supporting unit 1240a.

[0094] The third processing unit 1201c includes a third processing container 1220c and a third supporting unit 1240c. The third supporting unit 1240c includes a third supporting plate 1242c, a third driving shaft 1244c, and a third driver 1246c. The third processing container 1220c and the third supporting unit 1240c have substantially the same structure as the first processing container 1220a and the first supporting unit 1240a.

[0095] The liquid supply unit 1400 supplies liquid onto the substrate W. The liquid supply unit 1400 includes a first nozzle 1420a, a second nozzle 1420b, a third nozzle 1420c, and a treatment liquid nozzle 1440. The first nozzle 1420a supplies liquid to the substrate W provided to the first support unit 1240a, and the second nozzle 1420b supplies liquid to the substrate W provided to the second support unit 1240b. The third nozzle 1420c supplies liquid to the substrate W provided to the third support unit 1240c. The first nozzle 1420a, the second nozzle 1420b, and the third nozzle 1420c may be configured to supply the same type of liquid. According to an exemplary embodiment, the first nozzle 1420a, the second nozzle 1420b, and the third nozzle 1420c may supply a cleaning liquid for cleaning the substrate W. For example, the cleaning liquid may be water. According to another exemplary embodiment, the first nozzle 1420a, the second nozzle 1420b, and the third nozzle 1420c can supply a removal liquid for removing photoresist from an edge region of the substrate W. For example, the removal liquid can be a diluent. The first nozzle 1420a, the second nozzle 1420b, and the third nozzle 1420c can rotate between a process position and a standby position based on their rotation axes. The process position is where the liquid is sprayed onto the substrate W, while the standby position is where the first nozzle 1420a, the second nozzle 1420b, and the third nozzle 1420c wait and do not spray the liquid onto the substrate W.

[0096] The treatment liquid nozzle 1440 supplies treatment liquid to the substrate W provided to the first support unit 1240a and to the substrate W provided to the second support unit 1240b. The treatment liquid may be photoresist. The nozzle driver 1448 drives the treatment liquid nozzle 1440 so that the treatment liquid nozzle 1440 moves along the guide 1442 to a first process position, a second process position, a third process position, and a standby position. The first process position is a position for supplying treatment liquid to the substrate W supported by the first support unit 1240a, the second process position is a position for supplying treatment liquid to the substrate W supported by the second support unit 1240b, and the third process position is a position for supplying treatment liquid to the substrate W supported by the third support unit 1240c. The standby position is a position where the substrate waits at the standby port 1444 between the first processing unit 1201a and the second processing unit 1201b when photoresist is not being ejected from the treatment liquid nozzle 1440.

[0097] The gas-liquid separator 1229a may be disposed in the inner space of the first processing container 1220a. The gas-liquid separator 1229a may be disposed to extend from the bottom wall to the upper portion of the first processing container 1220a. The gas-liquid separator 1229a may be disposed in a ring shape.

[0098] According to an exemplary embodiment, the outer side of the gas-liquid separator 1229a is configured as a discharge space for discharging liquid, and the inner side of the gas-liquid separator 1229a can be configured as a discharge space for discharging atmosphere. A discharge pipe 1228a for discharging process liquid is connected to the bottom wall of the first processing container 1220a. The discharge pipe 1228a discharges the process liquid flowing between the side wall of the first processing container 1220a and the gas-liquid separator 1229a to the outside of the first processing container 1220a. The atmosphere flowing into the space between the side wall of the first processing container 1220a and the gas-liquid separator 1229a is introduced into the inner side of the gas-liquid separator 1229a. During this process, the process liquid contained in the atmosphere is discharged to the outside of the first processing container 1220a through the discharge pipe 1228a in the discharge space, and the atmosphere flow is introduced into the discharge space of the first processing container 1220a.

[0099] Although not shown, an elevating driver for adjusting relative heights of the first supporting plate 1242a and the first processing container 1220a may be provided.

[0100] Figure 9 FIG1 is a plan view schematically showing an embodiment of the discharge unit 1600. Figure 9 , the discharge unit 1600 includes an integrated pipe 1680, a first discharge pipe 1641a, a second discharge pipe 1642a, a third discharge pipe 1641b, a fourth discharge pipe 1642b, a fifth discharge pipe 1641c, and a sixth discharge pipe 1642c.

[0101] The integrated duct 1680 is provided on one side based on the direction in which the units are arranged. Figure 9 In the embodiment, when the unit arrangement direction is the X axis, the integrated duct 1680 may be positioned in the +Y axis direction based on the unit arrangement direction. The integrated duct 1680 may be disposed such that its longitudinal direction is substantially parallel to the unit arrangement direction.

[0102] A first exhaust pipe 1641a and a second exhaust pipe 1642a are coupled to the first processing container 1220a to exhaust the atmosphere from the first interior space 1222a of the first processing container 1220a. The first exhaust pipe 1641a is connected to the first exhaust port 1643a to introduce the atmosphere of the first interior space 1222a, and the second exhaust pipe 1642a is connected to the second exhaust port 1644a to introduce the atmosphere of the first interior space 1222a. According to an exemplary embodiment, the first exhaust pipe 1641a and the second exhaust pipe 1642a may be coupled to the bottom wall of the first processing container 1220a.

[0103] A third drain pipe 1641b and a fourth drain pipe 1642b are coupled to the second processing container 1220b to drain the atmosphere from the second interior space 1222b of the second processing container 1220b. The third drain pipe 1641b is connected to a third drain port 1643b to introduce the atmosphere from the second interior space 1222b, and the fourth drain pipe 1642b is connected to a fourth drain port 1644b to introduce the atmosphere from the second interior space 1222b. According to an exemplary embodiment, the third drain pipe 1641b and the fourth drain pipe 1642b may be coupled to the bottom wall of the second processing container 1220b.

[0104] A fifth exhaust pipe 1641c and a sixth exhaust pipe 1642c are coupled to the third process container 1220c to exhaust the atmosphere from the third internal space 1222c of the third process container 1220c. The fifth exhaust pipe 1641c is connected to a fifth exhaust port 1643c to introduce the atmosphere from the third internal space 1222c, and the sixth exhaust pipe 1642c is connected to a sixth exhaust port 1644c to introduce the atmosphere from the third internal space 1222c. According to an exemplary embodiment, the fifth exhaust pipe 1641c and the sixth exhaust pipe 1642c may be coupled to the bottom wall of the third process container 1220c.

[0105] The first drain pipe 1641a may have a main pipe and an inlet. The first drain port 1643a is provided at one end of the inlet, and the main pipe may be provided to extend from the other end of the inlet. The inlet is provided perpendicular to the bottom wall of the first processing container 1220a, and the main pipe may be substantially parallel to the bottom wall of the first processing container 1220a. The inlet may be provided so that its length is relatively shorter than that of the main pipe. The first drain port 1643a may be provided at a position spaced upward from the bottom wall of the first processing container 1220a. Optionally, the first drain port 1643a may be at the same height as the bottom wall of the first processing container 1220a. Alternatively, the first drain port 1643a may be provided at the same height as the bottom wall of the first processing container 1220a, and the first drain pipe 1641a may have only the main pipe and no inlet. In this case, the first drain pipe 1641a contacts the bottom wall of the first processing container 1220a, and the first drain port 1643a may be formed on the first drain pipe 1641a. The second discharge pipe 1642a, the third discharge pipe 1641b, the fourth discharge pipe 1642b, the fifth discharge pipe 1641c, and the sixth discharge pipe 1642c may be provided in the same shape and structure as the first discharge pipe 1641a.

[0106] In the aforementioned embodiment, the virtual straight line 1641 connecting the third discharge port 1643b, the fourth discharge port 1644b, the fifth discharge port 1643c, and the sixth discharge port 1644c may be the same straight line as the virtual straight line 1641 connecting the first discharge port 1643a and the second discharge port 1644a. For example, the first discharge port 1643a, the second discharge port 1644a, the third discharge port 1643b, the fourth discharge port 1644b, the fifth discharge port 1643c, and the sixth discharge port 1644c may be arranged in sequence along the virtual straight line 1641.

[0107] A pressure reducing member for providing flow pressure for discharge may be provided in the integrated pipe 1680. For example, the pressure reducing member 1630 may be a pump or a fan.

[0108] The integrated duct 1680 includes a first wall member 1651, a second wall member 1652, and an outer wall member 1650. The second wall member 1652 is positioned outside the first wall member 1651, and the outer wall member 1650 is positioned outside the second wall member 1652, when defined as outside in the (+Y) axis direction.

[0109] First wall member 1651 extends along the discharge direction starting between first treatment unit 1201a and second treatment unit 1201b. More specifically, first wall member 1651 extends along the discharge direction between a first position, in which first and second discharge pipes 1641a and 1642a are connected to integrated pipe 1680, and a second position, in which third and fourth discharge pipes 1641b and 1642b are connected to integrated pipe 1680, and divides the discharge path of integrated pipe 1680. Second wall member 1652 extends along the discharge direction starting between second treatment unit 1201b and third treatment unit 1201c. More specifically, the second wall member 1652 extends along the discharge direction and separates the discharge path of the integrated pipe 1680 starting between a second position and a third position, wherein the third discharge pipe 1641b and the fourth discharge pipe 1642b are connected to the integrated pipe 1680, and the fifth discharge pipe 1641c and the sixth discharge pipe 1642c are connected to the integrated pipe 1680 in the third position.

[0110] First wall member 1651 forms a first discharge path 1681 in conjunction with integrated duct 1680. Second wall member 1652 forms a second discharge path 1682 in conjunction with first wall member 1651. Outer wall member 1650 forms a third discharge path 1683 in conjunction with second wall member 1652. The extension lengths of first wall member 1651 and second wall member 1652 can be set to be different from each other. First wall member 1651 and second wall member 1652 can extend to a first point. The first point is located in front of the connection point between first discharge pipe 1641a and integrated duct 1680 in the X-axis direction and downstream of the connection point between first discharge pipe 1641a and integrated duct 1680 in the discharge direction.

[0111] The first discharge path 1681 is circularly connected to the first discharge pipe 1641a and the second discharge pipe 1642a. The second discharge path 1682 is fluidly connected to the third discharge pipe 1641b and the fourth discharge pipe 1642b. The third discharge path 1683 is fluidly connected to the fifth discharge pipe 1641c and the sixth discharge pipe 1642c.

[0112] The cross-sectional areas of the first, second, and third exhaust paths 1681, 1682, and 1683 can be set to be identical. In one embodiment, the cross-sectional areas D1, D2, and D3 of the first, second, and third exhaust paths 1681, 1682, and 1683 are set to be identical. In the present description, "identical cross-sectional areas" do not mean mathematically or physically identical, but rather encompass a range of identical or similar cross-sectional areas designed to account for manufacturing errors. Furthermore, the cross-sectional areas of the first, second, and third exhaust paths 1681, 1682, and 1683 can be set to be different. However, based on experimental results of the discharge volumes discharged from the first, second, and third exhaust paths 1681, 1682, and 1683, the cross-sectional areas D1, D2, and D3 of the first, second, and third exhaust paths 1681, 1682, and 1683 were designed to ensure the same discharge volumes.

[0113] First wall member 1651 and second wall member 1652 are used to guide the atmosphere in integrated duct 1680. The length and width of the partition walls in first wall member 1651 and second wall member 1652 can be selectively configured according to process conditions. First wall member 1651 and second wall member 1652 are installed in integrated duct 1680 to uniformize the air velocity and exhaust pressure provided to each of first treatment unit 1201a, second treatment unit 1201b, and third treatment unit 1201c, while preventing interference with the atmosphere exhausted from each of first treatment unit 1201a, second treatment unit 1201b, and third treatment unit 1201c.

[0114] Optionally, the first wall member 1651 and the second wall member 1652 can be configured so that their positions are movable. The first wall member 1651 and the second wall member 1652 can be configured to be independently movable. A driver can be connected to each of the first wall member 1651 and the second wall member 1652 to control the movement of the first wall member 1651 and the second wall member 1652. The first wall member 1651 and the second wall member 1652 are controlled to move in the +Y direction or the -Y direction to change the cross-sectional area D1 of the first discharge path 1681, the cross-sectional area D2 of the second discharge path 1682, and the cross-sectional area D3 of the third discharge path 1683, thereby making the discharge amount uniform. For example, the rotation speed of each of the support units 1240a, 1240b, and 1240c can be changed according to process conditions. In this case, the first wall member 1651 and the second wall member 1652 are controlled to move in the +Y direction or the -Y direction to change the cross-sectional area D1 of the first discharge path 1681, the cross-sectional area D2 of the second discharge path 1682, and the cross-sectional area D3 of the third discharge path 1683, thereby making the discharge amount uniform.

[0115] Figure 10 To show that Figure 7 A diagram of the atmosphere flow in a liquid processing chamber when processing a substrate. Figure 10 , according to an exemplary embodiment of the present invention, the wind speed and the discharge pressure provided to each of the first treatment unit 1201a, the second treatment unit 1201b, and the third treatment unit 1201c are constant. Figure 11 is a graph showing the flow of atmosphere through the exhaust unit of the comparative embodiment compared with the present invention. Figure 11In the comparative embodiment, the third processing unit 1201c interferes with the atmosphere flow of the first processing unit 1201a and the second processing unit 1201b to achieve the lowest wind speed and exhaust pressure. The first processing unit 1201a is positioned so as not to be affected by the atmosphere of the second processing unit 1201b and the third processing unit 1201c, and is located close to the exhaust air conditioning connection unit to achieve high wind speed and exhaust pressure. In other words, in the comparative embodiment, it is difficult to evenly maintain and manage the wind speed and exhaust pressure of the first processing unit 1201a, the second processing unit 1201b, and the third processing unit 1201c in terms of equipment process performance.

[0116] Figure 12 For the Figure 7 The discharge volume at each position of the discharge pipe when processing a substrate in a liquid processing chamber is Figure 11 Reference is made to the chart for comparison of the comparative examples. Figure 12 , the discharge pipe pipe 1 corresponding to the first treatment unit 1201a, the discharge pipe pipe 2 corresponding to the second treatment unit 1201b, and the discharge pipe pipe 3 corresponding to the third treatment unit 1201c have great differences in discharge amounts in the case of the comparative embodiment, but the discharge amounts are almost the same as each other in the embodiment.

[0117] The controller 1800 controls the first processing unit 1201a, the second processing unit 1201b, the third processing unit 1201c, and the liquid supply unit 1400. When a first substrate W is placed on the first supporting unit 1240a, the processing liquid nozzle 1440 moves to a first process position. The controller 1800 controls the first supporting unit 1240a to rotate the first substrate W and controls the liquid supply unit 1400 to spray photoresist from the processing liquid nozzle 1440 onto the first substrate W placed on the first supporting unit 1240a. Subsequently, when a second substrate W is placed on the second supporting unit 1240b, the processing liquid nozzle 1440 moves to a second process position. The controller 1800 controls the second supporting unit 1240b to rotate the second substrate W and controls the liquid supply unit 1400 to spray photoresist from the processing liquid nozzle 1440 onto the second substrate W placed on the second supporting unit 1240b. Next, when the third substrate W is placed on the third supporting unit 1240c, the treatment liquid nozzle 1440 moves to the third process position. The controller 1800 controls the third supporting unit 1240c to rotate the third substrate W and controls the liquid supply unit 1400 to spray photoresist from the treatment liquid nozzle 1440 onto the third substrate W placed on the third supporting unit 1240c.

[0118] The processing liquid nozzle 1440 can spray photoresist in any one of the first processing unit 1201a, the second processing unit 1201b and the third processing unit 1201c, and in another one or more processing units, the cleaning liquid or the removal liquid can be sprayed from the first nozzle 1420a, the second nozzle 1420b and the third nozzle 1420c.

[0119] When processes are performed in the processing units 1201a, 1201b, and 1201c, exhaust is performed in the inner spaces 1222a, 1222b, and 1222c of the processing units 1201a, 1201b, and 1201c. Figure 11 As shown in FIG. 1 , when the device having the discharge unit of the comparative embodiment is used, among the discharge pipes, the discharge pipe closer to the pressure reducing member has a higher discharge pressure, and the discharge pipe farther from the pressure reducing member has a lower discharge pressure, and thus, uneven discharge pressure occurs. However, when the device having the discharge unit 1600 according to the embodiment of the present invention is used, as shown in FIG. Figure 11 As shown in , the exhaust pressure of each of the processing units 1201a, 1201b and 1201c can be evenly distributed, thereby ensuring the same process results in each of the processing units 1201a, 1201b and 1201c.

[0120] As described above, the embodiment of providing three treatment units 1201a, 1201b, and 1201c has been described. However, based on the technical concept of the present invention, two treatment units 1201a and 1201b are provided, so that the first wall member 1651 can be disposed in the integrated duct 1600. The first wall member 1651 extends along the discharge direction between the first treatment unit 1201a and the second treatment unit 1201b, dividing the discharge path of the integrated duct 1680 and forming a first discharge path 1681 and a second discharge path 1682 in relation to the integrated duct 1680. The first discharge path 1681 is fluidically connected to the first discharge pipe 1641a and the second discharge pipe 1642a. The second discharge path 1682 is fluidically connected to the third discharge pipe 1641b and the fourth discharge pipe 1642b. The cross-sectional area of the first discharge path 1681 and the cross-sectional area of the second discharge path 1682 are set to be equal, or the cross-sectional area D1 of the first discharge path 1681 and the cross-sectional area D2 of the second discharge path are designed so that the discharge amount of each is the same based on the experimental results of the discharge amount discharged from the first discharge path 1681 and the second discharge path 1682.

[0121] The above-mentioned controller 1800 can control the substrate processing device. The controller 1800 can control the components of the substrate processing device 1000 so as to process the substrate according to the above-mentioned set process. The controller 1800 may include a processor controller composed of a microprocessor (computer) for executing substrate processing device control, a keyboard for performing command input operations by an operator to manage the substrate processing device, a user interface composed of a display etc. to visualize and display the operating status of the substrate processing device, and a storage unit for storing a control program or various data to perform the processing performed in the substrate processing device by controlling the process controller and program (i.e., the processing recipe for performing the processing in each configuration unit according to the processing conditions). In addition, the user interface and the storage unit can be connected to the process controller. The processing recipe can be stored in a storage medium in the storage unit, and the storage medium can be a hard disk, a removable disk such as a CD-ROM, a DVD, etc., or a semiconductor memory such as a flash memory.

[0122] The foregoing detailed description illustrates the present invention. Further, the above content shows and describes exemplary embodiments of the present invention, and the present invention can be used in various other combinations, modifications and environments. That is, the foregoing content can be modified or amended within the scope of the inventive concept disclosed in this specification, within the scope of the inventive concept equivalent to the present disclosure and / or within the scope of the technology or knowledge in the art. The foregoing exemplary embodiments describe the best state for presenting the technical essence of the present invention, and various changes required for the specific application fields and uses of the present invention are possible. Therefore, the above detailed description of the present invention is not intended to limit the present invention to the disclosed exemplary embodiments. Further, the appended claims should also be interpreted as including other exemplary embodiments.

Claims

1. An apparatus for processing a substrate, the apparatus comprising: a first processing unit including a first processing container configured to have a first internal space and a first supporting unit, wherein the first supporting unit supports and rotates the substrate in the first internal space; a second processing unit including a second processing container configured to have a second internal space and a second supporting unit, wherein the second supporting unit supports and rotates the substrate in the second internal space; and a discharge unit configured to discharge the first internal space and the second internal space, Wherein, the first processing unit and the second processing unit are arranged along a unit arrangement direction, wherein the discharge unit comprises an integrated pipe extending along the unit arrangement direction of the first processing unit and the second processing unit, a first exhaust pipe configured to have a first exhaust port for introducing the atmosphere of the first internal space and exhaust the atmosphere of the first internal space to the integrated duct; and a second discharge pipe configured to have a second discharge port for introducing the atmosphere of the second inner space and discharge the atmosphere of the second inner space to the integrated duct, wherein the integrated duct comprises a first wall member configured to separate a first discharge path in the integrated duct, wherein the first wall member starts between a first position and a second position and extends along the discharge direction of the first discharge path, in the first position the first discharge pipe is connected to the integrated pipe, and in the second position the second discharge pipe is connected to the integrated pipe, and wherein the first wall member separates a first discharge path and a second discharge path, the first discharge path is connected to the first discharge pipe, and the second discharge path is connected to the second discharge pipe; wherein the first position is located downstream of the second position in the exhaust direction of each of the first exhaust path and the second exhaust path, wherein the atmosphere of the first inner space exhausted through the first exhaust path and the atmosphere of the second inner space exhausted through the second exhaust path merge downstream of the first wall member, and wherein the first wall member has a first portion and a second portion, and wherein the first portion contacts the inner wall of the integrated pipe and is arranged obliquely relative to the longitudinal direction of the integrated pipe, and the second portion extends from the first portion and is arranged parallel to the longitudinal direction of the integrated pipe, wherein the second portion extends parallel to the outer wall of the discharge unit in the discharge direction of the first discharge path and the second discharge path.

2. The apparatus for processing a substrate according to claim 1, in, The first wall member extends downstream of the first position according to a discharge direction of the first position.

3. The apparatus for processing a substrate according to claim 2, in, At an end portion of the first wall member, a cross-sectional area of the first discharge path and a cross-sectional area of the second discharge path are set to be equal.

4. The apparatus for processing a substrate according to claim 1 , further comprising: a third processing unit configured to include a third processing container having a third internal space therein and a third supporting unit, and configured to process the substrate, the third processing container having a third internal space therein, and the third supporting unit supporting and rotating the substrate in the third internal space, The third processing unit is arranged in a row with the first processing unit and the second processing unit. The discharge unit further includes a third discharge pipe, which is configured to further discharge the third internal space, has a third discharge port for introducing the atmosphere of the third internal space, and discharges the atmosphere introduced through the third discharge port into the integrated pipeline. wherein the integrated duct further comprises a second wall member configured to separate the discharge path in the integrated duct; and wherein the second wall member starts between the second position and a third position and extends along the discharge direction of the discharge path, wherein in the third position the second discharge pipe is connected to the integrated pipe, and The second wall member divides a third discharge path, and the third discharge path is configured to communicate with the second discharge pipe and the third discharge pipe.

5. The apparatus for processing a substrate according to claim 4, in, The first wall member and the second wall member extend downstream of the first position according to a discharge direction of the first position.

6. The apparatus for processing a substrate according to claim 5, in, At an end portion of the first wall member and an end portion of the second wall member, a cross-sectional area of the first discharge path, a cross-sectional area of the second discharge path, and a cross-sectional area of the third discharge path are set to be equal.

7. The apparatus for processing a substrate according to claim 1, in, The first discharge pipe is coupled to the bottom wall of the first processing container, and The second discharge pipe is coupled to the bottom wall of the second processing container.

8. The apparatus for processing a substrate according to claim 1 , further comprising: A liquid supplier is configured to supply a processing liquid onto the substrate supported by the first supporting unit or the second supporting unit.

9. The apparatus for processing a substrate according to claim 1, in, A pressure reducing component is provided downstream of the first position of the integrated pipe, and the pressure reducing component is a pump or a fan.

10. The apparatus for processing a substrate according to claim 1, further comprising: a liquid supply unit configured to spray a processing liquid onto the substrate, Wherein, the liquid supply unit comprises: nozzle; and a nozzle driver configured to move the nozzle to a first process position facing the first supporting unit or a second process position facing the second supporting unit, so that the nozzle sprays liquid onto a substrate selected from among the substrate supported by the first supporting unit and the substrate supported by the second supporting unit.

11. The apparatus for processing a substrate according to claim 10, in, The processing liquid is photoresist.

12. The apparatus for processing a substrate according to claim 11, further comprising: a first fan filter unit located above the first processing unit and configured to include a fan for introducing external air into the first internal space and a filter for filtering the external air; as well as A second fan filter unit is located above the second processing unit and is configured to include a fan for introducing external air into the second internal space and a filter for filtering the external air.

13. The apparatus for processing a substrate according to claim 1, in, The first discharge pipe and the second discharge pipe are sequentially arranged along an arrangement direction of the first treatment unit and the second treatment unit.

14. The apparatus for processing a substrate according to claim 4, in, The first discharge pipe, the second discharge pipe, and the third discharge pipe are sequentially arranged along an arrangement direction of the first treatment unit, the second treatment unit, and the third treatment unit.

15. An apparatus for processing a substrate, the apparatus comprising: a first processing unit including a first processing container configured to have a first internal space and a first supporting unit, wherein the first supporting unit supports and rotates the substrate in the first internal space; a second processing unit including a second processing container configured to have a second internal space and a second supporting unit, wherein the second supporting unit supports and rotates the substrate in the second internal space; a third processing unit including a third processing container configured to have a third internal space and a third supporting unit, wherein the third supporting unit supports and rotates the substrate in the third internal space; and a discharge unit configured to discharge the first internal space, the second internal space, and the third internal space, Wherein, the first processing unit, the second processing unit and the third processing unit are arranged along a unit direction. wherein the discharge unit comprises an integrated pipeline, and the integrated pipeline extends along the unit arrangement direction of the first treatment unit, the second treatment unit, and the third treatment unit; a first exhaust pipe coupled to a bottom wall of the first processing container, the first exhaust pipe being configured to have a first exhaust port for introducing the atmosphere into the first internal space and exhausting the atmosphere introduced through the first exhaust port into the integrated pipe; a second exhaust pipe coupled to a bottom wall of the second processing container, the second exhaust pipe being configured to have a second exhaust port for introducing the atmosphere into the second internal space and exhausting the atmosphere introduced through the second exhaust port to the integrated duct; and a third exhaust pipe coupled to the bottom wall of the third processing container, the third exhaust pipe being configured to have a third exhaust port for introducing the atmosphere of the third internal space and exhausting the atmosphere introduced through the third exhaust port to the integrated pipeline, wherein the integrated duct comprises a first wall member and a second wall member configured to separate a discharge path in the integrated duct, wherein the first wall member starts between a first position and a second position and extends along a discharge direction of the discharge path, the first discharge pipe is connected to the integrated pipe in the first position, and the second discharge pipe is connected to the integrated pipe in the second position, and the first wall member separates a first discharge path and a second discharge path, the first discharge path is configured to communicate with the first discharge pipe, and the second discharge path and the second discharge pipe are distributably configured, wherein the second wall member starts between the second position and a third position and extends along the discharge direction of the discharge path, in the third position the second discharge pipe is connected to the integrated pipe, and the second wall member separates a third discharge path, the third discharge path is arranged to communicate with the second discharge pipe and the third discharge pipe, and wherein the first wall member and the second wall member extend downstream according to the discharge direction of the first position; wherein the first position is located downstream of the second position in the exhaust direction of each of the first exhaust path and the second exhaust path, wherein the atmosphere of the first inner space exhausted through the first exhaust path and the atmosphere of the second inner space exhausted through the second exhaust path merge downstream of the first wall member, and wherein the first wall member and the second wall member have a first portion and a second portion, and wherein the first portion contacts the inner wall of the integrated pipe and is arranged obliquely relative to the longitudinal direction of the integrated pipe, and the second portion extends from the first portion and is arranged parallel to the longitudinal direction of the integrated pipe, wherein the second portion extends parallel to the outer wall of the discharge unit in the discharge direction of the first discharge path and the second discharge path.

16. The apparatus for processing a substrate according to claim 15, in, At an end portion of the first wall member and an end portion of the second wall member, a cross-sectional area of the first discharge path, a cross-sectional area of the second discharge path, and a cross-sectional area of the third discharge path are set to be equal.

17. The apparatus for processing a substrate according to claim 15, further comprising: a liquid supply unit configured to spray a processing liquid onto the substrate, Wherein, the liquid supply unit comprises: nozzle; and a nozzle driver configured to move the nozzle to a first process position facing the first supporting unit, a second process position facing the second supporting unit, or a third process position facing the third supporting unit, so that the nozzle sprays liquid onto a substrate selected from among the substrate supported by the first supporting unit, the substrate supported by the second supporting unit, and the substrate supported by the third supporting unit.

18. The apparatus for processing a substrate according to claim 17, in, The processing liquid is photoresist.

19. The apparatus for processing a substrate according to claim 15, further comprising: a first fan filter unit located on the first processing unit and configured to include a fan for introducing external air into the first internal space and a filter for filtering the external air; a second fan filter unit located on the second processing unit and configured to include a fan for introducing external air into the second internal space and a filter for filtering the external air; as well as a third fan filter unit located on the third processing unit and configured to include a fan for introducing external air into the third internal space and a filter for filtering the external air.

20. The apparatus for processing a substrate according to claim 15, in, The first discharge pipe, the second discharge pipe, and the third discharge pipe are sequentially arranged along an arrangement direction of the first treatment unit, the second treatment unit, and the third treatment unit.

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