A lithographic apparatus and its applications

Abstract

An embodiment of the present invention discloses a lithography apparatus and its application. The lithography apparatus includes an LED light source, and the LED light source includes a plurality of LED chips and lenses, and each LED chip is coaxial with the corresponding lens; the centers of the first type of LED chips are located on a first circumference centered on the center of the central LED chip, and the centers of the second type of LED chips are located on a second circumference centered on the center of the central LED chip, and the radius of the first circumference is smaller than the radius of the second circumference. The technical solution of the embodiment of the present invention can achieve an average energy of more than 14 W / cm<supgt;2< / supgt; within a light-receiving surface of 9.4 mm × 9.4 mm, and the numerical aperture NA < 0.22, having the advantages of high illuminance, long life, energy conservation and environmental protection, etc., and can effectively improve the edge exposure accuracy and productivity.

Description

Technical Field

[0001] The embodiments of the present invention relate to semiconductor manufacturing technology, and in particular to a photolithography device and applications thereof. Background Art

[0002] Electroplating is one of the most important processes in post-packaging of IC circuits. It uses the edge of the silicon wafer as the anode and the electroplating window in the middle of the silicon wafer as the cathode. Then a certain DC working voltage is added between the positive and negative electrodes. The height of the metal bump is controlled by controlling the current size and the concentration of the plating solution in the plating tank.

[0003] Since photoresist is not conductive, the photoresist on the edge of the silicon wafer needs to be removed before the electroplating process. The width of the edge removal depends on the width of the edge removal in the previous wafer edge exposure (WEE) process. Traditional silicon wafer edge removal mainly includes chemical edge removal and edge exposure. The chemical edge removal method is to spray solvent on the edge of the silicon wafer to remove the photoresist on the edge of the silicon wafer during the silicon wafer coating process. The disadvantages of this method are that the edge removal time is long, the cost of solvent consumables is high, and the solvent is easy to spray to the middle graphic area of ​​the silicon wafer, which seriously affects the graphic quality. The edge exposure method is to vacuum adsorb the silicon wafer on a rotating platform, fix a set of ultraviolet exposure lenses above the edge of the silicon wafer to produce a uniform illumination spot of a certain size, and then use the rotation of the rotating platform to realize the exposure of the silicon wafer edge. Compared with the chemical edge removal method, the edge exposure method has the advantages of high production efficiency, low equipment cost and easy process control.

[0004] When existing photolithography devices perform light source exposure, mercury lamps are generally used as exposure light sources. Mercury lamps have problems such as long switching time, high energy consumption and environmental pollution, short life, and high spare parts cost. They cannot meet the needs of energy conservation, environmental protection, and high productivity. Summary of the invention

[0005] The embodiment of the present invention provides a photolithography device and its application. The photolithography device adopts an LED light source. The LED light source can achieve an average energy of 14W / cm within a light receiving surface of 9.4mm×9.4mm. 2 Above, and the numerical aperture NA<0.22, it has the advantages of high illumination, long life, energy saving and environmental protection, and can effectively improve the edge exposure accuracy and productivity.

[0006] In a first aspect, an embodiment of the present invention provides a lithography apparatus, comprising an LED light source, wherein the LED light source comprises a plurality of LED chips and lenses corresponding to the LED chips one by one, and each of the LED chips shares an optical axis with the corresponding lens;

[0007] The multiple LED chips include a central LED chip, a first type of LED chip and a second type of LED chip. The center of the first type of LED chip is located on a first circle with the center of the central LED chip as the center, the center of the second type of LED chip is located on a second circle with the center of the central LED chip as the center, and the radius of the first circle is smaller than the radius of the second circle.

[0008] Optionally, the light emitting planes of the first type LED chip and the light emitting planes of the second type LED chip both form a first angle with the light emitting plane of the central LED chip, and the first type LED chip and the second type LED chip are inclined toward the side close to the lens with the central LED chip as the center.

[0009] Optionally, the lens includes a central lens and an edge lens;

[0010] The central lens and the central LED chip share a common optical axis;

[0011] The edge lens comprises a first edge lens and a second edge lens. The first edge lens corresponds to the first type of LED chips one by one and shares a common optical axis. The second edge lens corresponds to the second type of LED chips one by one and shares a common optical axis.

[0012] Optionally, the first type of LED chips includes three LED chips, and the second type of LED chips includes three LED chips.

[0013] Optionally, the lens includes a central lens and six edge lenses arranged around the central lens;

[0014] The projection of the central lens on the first plane is a hexagon, and the edge lenses are closely arranged around the central lens;

[0015] The first plane is a plane perpendicular to the optical axis of the central lens.

[0016] Optionally, the first angle is greater than or equal to 5° and less than or equal to 15°.

[0017] Optionally, the first angle is 10°.

[0018] Optionally, a heat dissipation module is further included, wherein the heat dissipation module is arranged on a side of the LED chip away from the lens and in contact with the LED chip;

[0019] The heat dissipation module comprises a liquid inlet, a liquid outlet, and a cooling liquid circulation pipeline connecting the liquid inlet and the liquid outlet and arranged in a spiral manner.

[0020] Optionally, it further includes a controller, a light source driver and an electronic shutter, wherein the light source driver is electrically connected to the LED chip, and the light source driver and the electronic shutter are both electrically connected to the controller;

[0021] The light source driver is used to drive the LED chip to emit light under the control of the controller;

[0022] The electronic shutter is located on a side of the lens away from the LED chip. The electronic shutter is used to open after the LED chip emits stable light under the control of the controller, so that the LED light source outputs stable light.

[0023] Optionally, the power of the LED chip is 20W, and the divergence angle of the emitted light is 6°.

[0024] In a second aspect, an embodiment of the present invention further provides an application of any of the above-mentioned lithography devices, wherein the lithography device is used to perform edge exposure on a substrate.

[0025] The lithography device provided by the embodiment of the present invention includes an LED light source, the LED light source includes a plurality of LED chips and lenses corresponding to the LED chips one by one, each LED chip and the corresponding lens share a common optical axis; the plurality of LED chips include a central LED chip, a first type of LED chip and a second type of LED chip, the center of the first type of LED chip is located on a first circumference with the center of the central LED chip as the center, the center of the second type of LED chip is located on a second circumference with the center of the central LED chip as the center, and the radius of the first circumference is smaller than the radius of the second circumference. By arranging a plurality of LED chips, each LED chip is individually focused using a corresponding lens to increase the light intensity of the light receiving surface; by arranging a central LED chip and a first type of LED chip and a second type of LED chip on the periphery, the peripheral chips are alternately arranged in a staggered manner and tilted toward the central LED chip to achieve energy closer to the center, thereby achieving an average energy of 14W / cm within a light receiving surface of 9.4mm×9.4mm. 2 Above, and the numerical aperture NA<0.22, it has the advantages of high illumination, long life, energy saving and environmental protection, and can effectively improve the edge exposure accuracy and productivity. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 It is a structural schematic diagram of an LED light source of a lithography device provided by an embodiment of the present invention;

[0027] Figure 2 is a schematic diagram of a top view of an LED light source of a lithography device provided by an embodiment of the present invention;

[0028] Figure 3It is a schematic diagram of a top view structure of a lens in an LED light source of a lithography device provided by an embodiment of the present invention;

[0029] Figure 4 It is a schematic diagram of the partial structure of an LED light source of a lithography device provided by an embodiment of the present invention;

[0030] Figure 5 It is a schematic diagram of light path simulation of the first type LED chip and the second type LED chip;

[0031] Figure 6 This is a schematic diagram of the light spot of the first type of LED chip;

[0032] Figure 7 This is a schematic diagram of the light spot of the second type of LED chip;

[0033] Figure 8 This is a schematic diagram of the light spot of the central LED chip;

[0034] Fig. 9 This is a schematic diagram of the light path simulation of the central LED chip;

[0035] Fig.10 is a schematic structural diagram of an LED light source of another lithography device provided by an embodiment of the present invention;

[0036] Fig.11 yes Fig.10 A top view schematic diagram of

[0037] Fig.12 It is a structural schematic diagram of an LED light source of another lithography device provided by an embodiment of the present invention;

[0038] Fig.13 It is a schematic diagram of the structure of the electronic shutter provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0039] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It is to be understood that the specific embodiments described herein are only used to explain the present invention, rather than to limit the present invention. It should also be noted that, for ease of description, only parts related to the present invention, rather than all structures, are shown in the accompanying drawings.

[0040] The terms used in the embodiments of the present invention are only for the purpose of describing specific embodiments and are not intended to limit the present invention. It should be noted that the directional words such as "upper", "lower", "left", "right" and the like described in the embodiments of the present invention are described at the angles shown in the accompanying drawings and should not be understood as limitations on the embodiments of the present invention. In addition, in the context, it is also necessary to understand that when it is mentioned that an element is formed "on" or "under" another element, it can not only be directly formed "on" or "under" another element, but also indirectly formed "on" or "under" another element through an intermediate element. The terms "first", "second" and the like are only used for descriptive purposes and do not indicate any order, quantity or importance, but are only used to distinguish different components. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to the specific circumstances.

[0041] At present, edge exposure generally uses mercury lamp as light source, and there are few cases where LED light source technology is applied in the field of lithography. In particular, in the edge exposure industry, there is basically no high-illuminance LED light source available, mainly because there is a bottleneck in LED technology. It is very difficult to significantly increase the illumination of the light source while meeting the condition of small NA. The embodiment of the present invention provides a lithography device suitable for edge exposure, which uses a high-illuminance LED light source and has high engineering application value.

[0042] Figure 1 FIG. 1 is a schematic diagram of the structure of an LED light source of a lithography device provided by an embodiment of the present invention. Figure 2 FIG. 1 is a schematic diagram of a top view of an LED light source of a lithography device provided by an embodiment of the present invention, referring to FIG. Figure 1 and Figure 2 The LED light source of the lithography device provided in this embodiment includes a plurality of LED chips 10 and lenses 20 corresponding to the LED chips 10 one by one, each LED chip 10 and the corresponding lens 20 share an optical axis; the plurality of LED chips 10 include a central LED chip 11, a first type of LED chip 12 and a second type of LED chip 13, the center of the first type of LED chip 12 is located on a first circle a with the center O of the central LED chip 11 as the center, the center of the second type of LED chip 13 is located on a second circle b with the center O of the central LED chip 11 as the center, and the radius of the first circle a is smaller than the radius of the second circle b.

[0043] It is understandable that for the design of ultra-high power UVLED point light sources, it is necessary to reach 14W / cm in a small area. 2For the above irradiation intensity, the first thing to consider is to choose high-power LED chips, good heat dissipation structure, and how to focus the LED energy into a small range at a low angle. After comparison and screening, there are two options for LED chips: A chip: power is 6W, radiation angle is 120 degrees, size is 3.5mm×3.5mm. B chip: power is 20W, radiation angle is 120 degrees, size is 7mm×7mm.

[0044] The conventional idea is to use an array LED and use a small lens to focus the LED chips with a divergence angle of 120 degrees individually. For example, 32 A chips are closely arranged and the divergence angle is controlled within 60 degrees to obtain a The total power of the light-emitting surface is 192W, and then the lens group is used to focus the light-emitting surface to a light-receiving surface of 9.4mm×9.4mm. Although a single lens is used to focus, an illumination of 19W / cm2 can be obtained. 2 , The circular spot can be obtained, but the requirement of NA less than 0.22 is not met. It is extremely difficult to converge multi-point light and the focusing effect is extremely difficult to achieve. From the model analysis, the light on the light-emitting surface is relatively messy. Even if a mirror group is used, the light on the light-emitting surface needs to be processed into quasi-parallel light, and then a small rectangular spot is obtained by focusing and parallelizing. This design is cumbersome and uncertain.

[0045] Another idea is to focus the high-power chips separately and then converge them to the same point. Although the B chip is a single light source, the chip's light-emitting element is a 3mm×3mm rectangle, and it is difficult to fully focus or process it into parallel light. The design uses double lenses for focusing. At this time, a rectangular light spot with a divergence angle of 6 degrees can be converged into an 8mm×8mm rectangular light spot on a 20mm focal plane. The energy distribution is high in the center and low at the edge.

[0046] Therefore, in order to meet the requirements of high illumination, the embodiment of the present invention adopts a multi-chip focusing method, wherein the central LED chip 11, the first type LED chip 12 and the second type LED chip 13 can be selected from the same type of LED chips. In order to meet the requirements of the embodiment of the present invention, the power of the LED chip is 20W, and the divergence angle of the emitted light is 6°, that is, the B chip mentioned above is adopted. Figure 2 Optionally, the first type of LED chip 12 includes three LED chips, and the second type of LED chip 13 includes three LED chips, wherein the center of the first type of LED chip 12 is located on the near-center circle a, and the center of the second type of LED chip 13 is located on the far-center circle b, and the first type of LED chip 12 and the second type of LED chip 13 are arranged to be inclined toward the light-receiving surface so that more light can be irradiated onto the light-receiving surface.

[0047] The technical solution of this embodiment is to increase the light intensity of the light receiving surface by arranging multiple LED chips, each LED chip is focused separately by a corresponding lens; and the peripheral first-type LED chips and second-type LED chips are arranged alternately and tilted toward the central LED chip to achieve energy closer to the center, thereby achieving an average energy of 14W / cm within a 9.4mm×9.4mm light receiving surface. 2 The above, and the numerical aperture NA <0.22, has the advantages of high illumination, long life, energy saving and environmental protection, and can effectively improve the edge exposure accuracy and yield. In addition, the LED light source provided in this embodiment can be effectively connected with the existing mirror group, reducing the structural changes of the existing products and reducing the energy loss of the optical path; the light-emitting band of the LED chip can be set according to the needs, covering G (453.84nm), H (404.66nm), I (365.01nm) and other bands to meet the exposure of the subsequent photoresist.

[0048] Based on the above technical solution, optional, continue to refer to Figure 1 , the light emitting plane of the first type LED chip 12 ( Figure 1 The lower surface of the first type LED chip 12 is the light emitting surface, the same below) and the light emitting plane of the second type LED chip 13 are both at a first angle α with the light emitting plane of the central LED chip 11, and the first type LED chip 12 and the second type LED chip 13 are inclined toward the side close to the lens 20 with the central LED chip 11 as the center, which is conducive to light convergence.

[0049] Optionally, the lens includes a central lens and an edge lens; the central lens shares an optical axis with the central LED chip; the edge lens includes a first edge lens and a second edge lens, the first edge lens shares an optical axis with the first type of LED chip in a one-to-one correspondence, and the second edge lens shares an optical axis with the second type of LED chip in a one-to-one correspondence.

[0050] Optionally, the lens includes a central lens and six edge lenses arranged around the central lens; the projection of the central lens on the first plane is a hexagon, and the edge lenses are closely arranged around the central lens; the first plane is a plane perpendicular to the optical axis of the central lens.

[0051] For example, Figure 3 FIG. 1 is a schematic diagram of a top view of a lens in an LED light source of a lithography device provided by an embodiment of the present invention, with reference to FIG. Figure 3The lens 20 includes a central lens 21 and six edge lenses 22 arranged around the central lens; the edge lenses include a first edge lens and a second edge lens, the first edge lens corresponds to the first type of LED chip one by one, and the second edge lens corresponds to the second type of LED chip one by one. The outline of the central lens 21 is a hexagon, and the edge lenses 22 are closely arranged around the central lens 21.

[0052] It is understandable that in this embodiment, based on the maximum energy design condition, the distance between the chips needs to be very close, but due to the limited space, the design of the lens group is difficult. From the single chip model, the lens is a double convex lens with a diameter of 10mm. According to the chip design size in the embodiment of the present invention, 7 chips cannot be placed within the range of 25mm in diameter. Therefore, the lens needs to be reduced in size, which will have a certain impact on energy convergence. In order to solve this problem, the center lens is designed as a tapered hexagon based on the collinearity between the center of the lens and the central axis of the chip, and the surrounding lenses are designed as semicircles with tapered edges cut on three sides. Then, the lenses are combined into a lens group, which can solve the problem of narrow installation space. Figure 3 shown.

[0053] Optionally, the first angle is greater than or equal to 5° and less than or equal to 15°. Optionally, the first angle is 10°.

[0054] When designing an LED light source, the chips need to be installed at a certain angle to focus the energy. The following factors should be considered:

[0055] 1. From a theoretical analysis, the larger the angle, the smaller the focal plane and the stronger the energy; conversely, the larger the focal plane, the weaker the energy, so the larger the angle, the better.

[0056] 2. However, if the light-receiving surface is 9.4mm×9.4mm and the NA is less than 0.22, the chip center offset angle is required to be relatively small (must be less than 12 degrees); if it is greater than 12 degrees, more energy cannot enter the light-receiving surface.

[0057] 3. The single-chip spot model has a divergence angle of 6 degrees and a single-side angle of 3 degrees, so the tilt angle needs to be smaller than 12 degrees.

[0058] Taking the above three factors into consideration, the chip oblique angle is defined as 10 degrees for simulation. Figure 4 FIG. 1 is a schematic diagram of a partial structure of an LED light source of a lithography device provided by an embodiment of the present invention, with reference to FIG. Figure 4 The chip on the left is the first type LED chip 12, which is on the near center circle, the chip in the middle is the central LED chip 11, and the chip on the right is the second type LED chip 13, which is on the far center circle.

[0059] Figure 5Shown is a schematic diagram of light path simulation for the first type of LED chip and the second type of LED chip. Figure 5 In the example, L1 and L2 correspond to Figure 4 Middle distance, L1 = 8.28mm, L2 = 9.46mm, H is the focal length. The smaller H is, the light spot cannot be fully projected to the light receiving area. The larger H is, the greater the light spot energy loss is, and the energy requirement cannot be met. Through three-dimensional simulation, when H = 23mm, most of the light spot can be projected to the light receiving area. The size of the light receiving surface in the figure is a 9.4mm×9.4mm rectangular frame, and the diagonal size is 13.3mm.

[0060] Figure 6 The figure shows the light spot of the first type of LED chip. Figure 6 When H=23mm, all the energy in the center of the chip enters the light-receiving area, and about 10% to 20% of the edge energy does not enter. Figure 7 The figure shows the light spot of the second type of LED chip. Figure 7 , when H = 23mm, all the energy in the center of the chip enters the light-receiving area, and about 25% to 35% of the edge energy does not enter. Figure 8 This is a schematic diagram of the light spot of the central LED chip, refer to Figure 8 , all the energy enters the light receiving surface. Fig. 9 The figure shows the light path simulation diagram of the central LED chip. Fig. 9 According to the design model analysis, when H is greater than 23mm, a larger proportion of light will enter the light-receiving surface. However, the energy is severely attenuated as H increases. When H is less than 23mm, a larger proportion of light will leave the light-receiving surface, resulting in reduced energy. Therefore, considering the highest energy point, H = 23mm is determined for fine-tuning. Considering the structure of the lens housing, the distance from the housing to the light-receiving surface is defined as the focal length H*. When H* = 21mm or so, the maximum energy can be obtained.

[0061] Fig.10 FIG. 1 is a schematic diagram of the structure of an LED light source of another lithography device provided by an embodiment of the present invention. Fig.11 Shown Fig.10 Schematic diagram of top view, see Fig.10 Optionally, the LED light source of the lithography device provided in this embodiment further includes a heat dissipation module 30, which is disposed on a side of the LED chip 10 away from the lens 20 and in contact with the LED chip 10; Fig.11 The heat dissipation module includes a liquid inlet 31, a liquid outlet 32, and a cooling liquid circulation pipeline 33 which connects the liquid inlet 31 and the liquid outlet 32 ​​and is arranged in a spiral.

[0062] It is understandable that the energy of LED chips is related to temperature. The higher the temperature, the lower the energy. Therefore, heat dissipation is also an influencing factor that must be considered. If the heat transfer effect cannot be achieved by relying on the workpiece's own heat dissipation or fan-assisted heat dissipation, the heat dissipation of the coolant circulation system must be considered. The coolant can be water. It should be noted that Fig.11 The shape of the coolant flow pipeline 33 shown in FIG. 1 is only schematic and is not intended to limit the embodiment of the present invention.

[0063] The water circulation system structure is designed as follows: the chip substrate is directly fixed on the water circulation channel. The closer the chip is to the water flow, the better the heat dissipation efficiency. Fig.10 As shown. Through the circuitous design, the water circulation covers the entire surface, with water entering from the center of the product and exiting from the outer edge. The heat source of the entire chip is located inside the heat dissipation frame, which is designed with copper material with excellent thermal conductivity to achieve the best cooling effect. The water circulation equipment provides its own circulating water source, which is powered by the light source controller to continuously cool the LED light source.

[0064] Fig.12 FIG. 2 is a schematic diagram of the structure of an LED light source of another lithography device provided by an embodiment of the present invention. Fig.12 Optionally, the LED light source of the lithography device provided in this embodiment also includes a controller 40, a light source driver 50 and an electronic shutter 60. The light source driver 50 is electrically connected to the LED chip 10, and both the light source driver 50 and the electronic shutter 60 are electrically connected to the controller 40; the light source driver 50 is used to drive the LED chip 10 to emit light under the control of the controller 40; the electronic shutter 60 is located on the side of the lens 20 away from the LED chip 10, and the electronic shutter 60 is used to open after the LED chip 10 emits light stably under the control of the controller 40, so that the LED light source outputs stable light.

[0065] In this embodiment, the rated power of the LED chip is 20W and the maximum current is 6A. To drive this 7-chip light source, a light source driver with a power supply capacity of 24V and 6A is required, and a dedicated UV LED controller is required to drive the LED light source.

[0066] Since the starting current is relatively large, instantaneous control of the LED light will reach a relatively large current. In theory, there will be an uncertain delay, which will affect the actual application. However, the actual application needs to meet the starting delay of no more than 30ms, and the delay must be absolutely stable. It will be very difficult to accurately control the delay problem from the inside of the controller. Therefore, a shutter control strategy similar to camera exposure is adopted. In theory, it is only necessary to turn on the LED light source in advance, and then open the electronic shutter after the light is stable, so as to achieve the purpose of instantaneous control of light.

[0067] The shutter is designed based on the size of the LED lamp and the external support parts. If the shutter is to be fully integrated into the light source system, the electronic shutter needs to have a very thin structure and an easily replaceable connector. Fig.13 FIG. 1 is a schematic diagram of the structure of an electronic shutter provided by an embodiment of the present invention, referring to FIG. Fig.13 The central light-clearance size is designed to be The shutter control component is 8.2mm thick. After repeated tests, the shutter mechanism response speed is 21±1ms, which can meet the response requirement within 30ms.

[0068] In order to achieve accurate control signals for LED light sources, the signal settings of its controller are shown in Table 1:

[0069] Table 1

[0070] Pins INPUT Terminal Definition 1 TRG Simultaneous startup 2 EMG Emergency Stop 3 TRG5 Step mode, irradiation 4 TRG1 CH1 UV Start 5 TRG2 CH2 UV Start 6 TRG3 CH3 UV Start 7 TRG4 CH4 UV Start 8 GND Power supply P1 DC36V- 9 VCC Power supply P1 DC36V+ OUTPUT Terminal Definition 10 UV ON4 CH4 is lighting up 11 UV ON3 CH3 is lighting up 12 UV ON2 CH2 is lighting up 13 UV ON1 CH1 is lighting up 14 ERROR4 CH4 abnormal alarm 15 ERROR3 CH3 abnormal alarm 16 ERROR2 CH2 abnormal alarm 17 ERROR1 CH1 abnormal alarm 18 UV ON Controller is lighting up 19 READY Controller ready 20 Shutter On Shutter Start Open 21 Shutter state Shutter is open

[0071] In order to test the uniformity and actual illumination data of the LED light source, the LED light source is connected to the converging imaging lens group and tested at the best focal plane using a CCD tester. The penumbra width in the X direction at the best focal plane is 110μm, the spot size is 5106μm, and the uniformity is 0.025; the penumbra width in the X direction at a negative defocus of 0.1mm is 107.8μm, the spot size is 5011.6μm, and the uniformity is 0.025; the penumbra width in the X direction at a positive defocus of 0.1mm is 138 .6μm, the spot size is 5016μm, and the uniformity is 0.025; the penumbra width in the Y direction at the best focus plane is 138.6μm, the spot size is 5007.2μm, and the uniformity is 0.025; the penumbra width in the Y direction at a negative defocus of 0.1mm is 132μm, the spot size is 5002.8μm, and the uniformity is 0.025; the penumbra width in the Y direction at a positive defocus of 0.1mm is 184.8μm, the spot size is 5016μm, and the uniformity is 0.025. At the same time, the OAI illuminance meter is used to test the actual illuminance value at the best focus plane, which can reach 14.56W / cm 2 From the uniformity-related data and the measured illumination, it can be seen that the designed LED light source meets the requirements and achieves the expected effect.

[0072] An embodiment of the present invention further provides an application of any one of the lithography devices provided in the above embodiments, and the lithography device is used to perform edge exposure on a substrate. The substrate may be a silicon wafer, and the silicon wafer that can be exposed includes a standard silicon wafer or a process wafer. Process wafers include CV wafers (Cavity, glass wafers), LE wafers (Lithography-Etch, bonding wafers without scribe grooves), LL wafers (Lithography-Lead, bonding wafers with scribe grooves engraved), SMF wafers (Sold Mask Formation, bonding wafers coated with insulating glue between processes), bonding wafers, ultra-thin wafers, large warpage silicon wafers, etc., and various process silicon wafers are quite different. For example, TSV (Through-silicon-via, bonding process wafer) is divided into several layers of process:

[0073] 1. CV layer: Paint the glass sheet green and expose the scoring groove;

[0074] 2. PE layer: coating on standard silicon wafers to expose scribe grooves;

[0075] 3. LE1 layer: Bond the CV process product with the PE process product. The silicon wafer has been ground and thinned. After the thickness is thinned, the edge of the silicon wafer will be damaged and there will be suspected gaps in the glue coating.

[0076] 4. LE2 layer: expose the slope in the middle of the scoring groove;

[0077] 5. LL layer: expose the integrated circuit onto the silicon wafer;

[0078] 6. LL2 layer: The LL layer is not fully exposed, and there is residual glue in the middle of the scribe groove;

[0079] 7. SMF layer: Apply insulating glue to separate the wiring. It can also be sapphire, glass plate, etc.

[0080] Note that the above are only preferred embodiments of the present invention and the technical principles used. Those skilled in the art will understand that the present invention is not limited to the specific embodiments described herein, and that various obvious changes, readjustments and substitutions can be made by those skilled in the art without departing from the scope of protection of the present invention. Therefore, although the present invention has been described in more detail through the above embodiments, the present invention is not limited to the above embodiments, and may include more other equivalent embodiments without departing from the concept of the present invention, and the scope of the present invention is determined by the scope of the appended claims.

Claims

1. A lithography apparatus, It is characterized in that The LED light source comprises a plurality of LED chips and lenses corresponding to the LED chips one by one, and each LED chip and the corresponding lens share a common optical axis; The plurality of LED chips include a central LED chip, a first type of LED chip and a second type of LED chip, wherein the center of the first type of LED chip is located on a first circumference with the center of the central LED chip as the center, the center of the second type of LED chip is located on a second circumference with the center of the central LED chip as the center, and the radius of the first circumference is smaller than the radius of the second circumference; The light emitting planes of the first type of LED chips and the light emitting planes of the second type of LED chips both form a first angle with the light emitting plane of the central LED chip, and the first type of LED chips and the second type of LED chips are inclined toward a side close to the lens with the central LED chip as the center; The first type of LED chips and the second type of LED chips are alternately arranged in a staggered manner, so that the first type of LED chips and the second type of LED chips are located on both sides of the central LED chip respectively.

2. The lithography apparatus according to claim 1, It is characterized in that The lens includes a central lens and an edge lens; The central lens and the central LED chip share a common optical axis; The edge lens comprises a first edge lens and a second edge lens. The first edge lens corresponds to the first type of LED chips one by one and shares a common optical axis. The second edge lens corresponds to the second type of LED chips one by one and shares a common optical axis.

3. The lithography apparatus according to claim 2, It is characterized in that The first type of LED chips includes three LED chips, and the second type of LED chips includes three LED chips.

4. The lithography apparatus according to claim 3, It is characterized in that The lens comprises a central lens and six edge lenses arranged around the central lens; The projection of the central lens on the first plane is a hexagon, and the edge lenses are closely arranged around the central lens; The first plane is a plane perpendicular to the optical axis of the central lens.

5. The lithography apparatus according to claim 1, It is characterized in that The first angle is greater than or equal to 5° and less than or equal to 15°.

6. The lithographic apparatus according to claim 5, It is characterized in that The first angle is 10°.

7. The lithographic apparatus according to claim 1, It is characterized in that It also includes a heat dissipation module, which is arranged on a side of the LED chip away from the lens and in contact with the LED chip; The heat dissipation module comprises a liquid inlet, a liquid outlet, and a cooling liquid circulation pipeline connecting the liquid inlet and the liquid outlet and arranged in a spiral manner.

8. The lithographic apparatus according to claim 1, It is characterized in that It also includes a controller, a light source driver and an electronic shutter, wherein the light source driver is electrically connected to the LED chip, and the light source driver and the electronic shutter are both electrically connected to the controller; The light source driver is used to drive the LED chip to emit light under the control of the controller; The electronic shutter is located on the side of the lens away from the LED chip. The electronic shutter is used to open under the control of the controller after the LED chip emits light stably, so that the LED light source outputs stable light.

9. The lithography apparatus according to claim 1, characterized in that the power of the LED chip is 20 W, and the divergence angle of the emitted light is 6°.

10. An application of the lithography apparatus according to any one of claims 1 to 9, characterized in that the lithography apparatus is used for edge exposure of a substrate.

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