Microelectromechanical resonator
By using a composite structure of degenerate-doped monocrystalline silicon and polycrystalline silicon layers with piezoelectric materials, combined with temperature compensation technology, the frequency instability problem of MEMS resonators under temperature changes was solved, and the frequency stability and anti-aging performance were improved.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SITIME CORP
- Filing Date
- 2016-06-19
- Publication Date
- 2026-07-17
AI Technical Summary
Existing microelectromechanical systems (MEMS) resonators are unstable in frequency when the temperature changes, making it difficult to achieve high quality factor and low aging characteristics, and traditional metal electrode layers are prone to wear.
By employing a composite structure of degenerate-doped monocrystalline silicon and polycrystalline silicon layers with piezoelectric material layers, and by designing parameters such as layer thickness ratio, crystallographic orientation, and dopant concentration, the temperature coefficient of frequency (TCF) can be made essentially zero or controllable. A combination of passive and active temperature compensation is used, along with in-situ temperature sensing elements, to adjust the frequency.
It achieves frequency stability over a wide temperature range, reduces the effects of aging, improves the quality factor and shock resistance of the resonator, and avoids wear of the metal electrodes.
Smart Images
Figure CN114726339B_ABST