A micro-light-emitting component, a micro-light-emitting diode and a display device thereof

Abstract

The present invention relates to a micro-light-emitting component, a micro-light-emitting diode and a display device thereof, comprising: at least one support structure, the support structure at least comprising an arm structure formed by overlapping a plurality of dielectric layers with different stress directions, and the materials of adjacent dielectric layer structures being different; a semiconductor layer sequence; the arm is in contact and fixed with the semiconductor layer sequence, and an arm structure is formed by cross-stacking multiple dielectric layers with different stress directions, so that the stress generated inside can be offset, solving the problem that the arm structure is prone to breakage.

Description

Technical Field

[0001] The present invention relates to a semiconductor structure, and more particularly to a micro-light-emitting component, a micro-light-emitting diode and a display device thereof. Background Art

[0002] At present, the transfer of micro-light-emitting diodes is mainly carried out by means of van der Waals force, electrostatic force or magnetic force, etc., to transfer the micro-light-emitting diodes on the carrier substrate to the receiving substrate. Generally speaking, the micro-light-emitting diodes will be held by a support structure so that the micro-light-emitting diodes can be easily picked up from the carrier substrate, transported and transferred to the receiving substrate for placement, and the support structure is used to consolidate the micro-light-emitting diodes so that their quality will not be affected by other internal or external factors during transfer.

[0003] Since a photosensitive material or a single-layer dielectric film is currently used to fabricate the fixing structure, but due to the reduction in the size of the micro-light-emitting diodes, the width of the fixing structure is limited, and thus the structural strength of the fixing structure is relatively weak. In the chip manufacturing process, in order to improve the transfer yield, a suspended structure of the micro-light-emitting diodes is fabricated, and usually a process of bonding a sacrificial layer is required. Therefore, in the process of bonding the sacrificial layer, how to make the support structure temporarily hold the micro-light-emitting diodes without increasing the imprint transfer difficulty during subsequent transfer has become one of the technical problems in the industry. Summary of the Invention

[0004] In order to solve the problems encountered in the background art, the present invention provides a micro-light-emitting component, a micro-light-emitting diode and a display device thereof, so as to achieve both the transfer yield during transfer and the bridge arm strength during bonding of the sacrificial layer.

[0005] To solve the above problems, the present invention discloses a micro-light-emitting component, including: a substrate for providing die bonding, a main body having a semiconductor layer sequence, i.e., a main body part for micro-light-emitting diode light emission, and a support structure, and the support structure fixes the semiconductor layer sequence on the substrate.

[0006] The support structure at least includes a first dielectric layer and a second dielectric layer. In some processes, the second dielectric layer covers the surface of the first dielectric layer;

[0007] The material of the first dielectric layer is different from that of the second dielectric layer. The first dielectric layer is located between the second dielectric layer and the semiconductor layer sequence and is connected to the second dielectric layer and the main body;

[0008] There is a gap between the main body and the upper surface of the substrate;

[0009] The thickness of the second dielectric layer is 1.5 to 10 times that of the first dielectric layer. For the second dielectric layer to provide sufficient support, a relatively thin first dielectric layer is first used mainly to eliminate stress during the manufacturing process and avoid the rupture of the support structure due to stress release during the bonding process. The second dielectric layer is mainly used to provide a bridge between the die and the substrate during transfer. The thickness of the second dielectric layer is significantly greater than that of the first dielectric layer, and at the same time, the stress regulation difficulty of the support structure is reduced by taking advantage of the different materials and film-forming stress differences between the two.

[0010] According to the present invention, preferably, the material of the first dielectric layer is silicon oxide, the first dielectric layer is serially connected to the semiconductor layer of the main body, and the material of the second dielectric layer is silicon nitride. The thickness of the first dielectric layer is 0.1 to 0.5 microns; the thickness of the second dielectric layer is 0.15 to 0.3 microns, 0.3 to 0.8 microns, or 0.8 to 2 microns, and the widths of the first dielectric layer and the second dielectric layer are 1 to 20 microns.

[0011] According to the present invention, in some embodiments, preferably, the semiconductor layer sequence at least consists of a first semiconductor layer, an active layer, and a second semiconductor layer. The semiconductor layer sequence includes a first part away from the substrate and a second part close to the substrate. The projection of the first part on the horizontal plane is larger than the projection of the second part on the horizontal plane, and the support structure extends from below the first part to the substrate. The second part at least includes the active layer and the second semiconductor layer, and the first dielectric layer and / or the second dielectric layer are provided on the sidewall of the second part.

[0012] In these embodiments of the present invention, preferably, the first part includes an N-type semiconductor layer, and the second part includes an N-type semiconductor layer, an active layer, and a P-type semiconductor layer.

[0013] According to the present invention, in some embodiments, preferably, the support structure includes a glue material, an inorganic dielectric, or a metal as a fixed anchor, and the first dielectric layer and / or the second dielectric layer are indirectly connected to the substrate through the fixed anchor.

[0014] According to the present invention, in some embodiments, preferably, a part of the first dielectric layer is removed, the second dielectric layer is exposed from the first dielectric layer, and the main body directly or indirectly fixes the semiconductor layer sequence on the substrate through the second dielectric layer.

[0015] In these embodiments, preferably, the first dielectric layer is provided with a slot or an opening, and the second dielectric layer is exposed from the slot or the opening.

[0016] In these embodiments, preferably, the slot or the opening is provided around the semiconductor layer.

[0017] According to the present invention, preferably, each of the first dielectric layer and the second dielectric layer in the support structure is one layer.

[0018] In some embodiments of the present invention, preferably, one side of the main body away from the substrate has a roughened structure, and the roughened structure is fabricated by etching.

[0019] In these embodiments, preferably, one side of the main body close to the substrate has a third dielectric layer, the third dielectric layer includes titanium oxide, the third dielectric layer is disposed between the main body and the first dielectric layer, and the first dielectric layer and the second dielectric layer successively cover the sides of the third dielectric layer.

[0020] According to the present invention, preferably, the thickness of the second dielectric layer is variable, and the thickness of the second dielectric layer away from the main body is less than the thickness of the second dielectric layer located below the main body.

[0021] According to the present invention, preferably, the first dielectric layer at least includes a material in the negative stress direction, and the material of the second dielectric layer at least includes a material in the positive stress direction. For example, the first dielectric layer uses silicon oxide with a relatively thin thickness. Since the film-forming stress of silicon oxide in the process is relatively larger than that of silicon nitride, it can be used to adjust the stress, but the thickness of silicon oxide should not be set too thick. Then, the second dielectric layer made of relatively thick silicon nitride is fabricated, and the film-forming quality of the second dielectric layer is improved.

[0022] The present invention also discloses a micro light-emitting diode, including:

[0023] A semiconductor layer sequence, at least including a first semiconductor layer, a second semiconductor layer, and an active layer located therebetween. The semiconductor layer sequence is at least composed of a first part and a second part. The projection of the first part on the horizontal plane is larger than the projection of the second part on the horizontal plane. The first part is disposed above the second part, and the lower surface of the first part exposes from the second part; the second part at least includes the active layer and the second semiconductor layer, and the first dielectric layer and / or the second dielectric layer are disposed on the sidewall of the second part.

[0024] A first electrode, electrically connected to the first semiconductor layer, and a second electrode, electrically connected to the second semiconductor layer;

[0025] A residual support structure is disposed on the lower surface of the first part, and one end of the residual support structure away from the semiconductor layer sequence has a fracture surface.

[0026] The residual support structure at least includes a first dielectric layer and a second dielectric layer; the material of the first dielectric layer is different from the material of the second dielectric layer. The first dielectric layer is located between the second dielectric layer and the semiconductor layer sequence, where the thickness of the second dielectric layer is 1.5 times to 10 times the thickness of the first dielectric layer.

[0027] According to the present invention, preferably, the second part at least includes the active layer and the second semiconductor layer, the first dielectric layer and / or the second dielectric layer are disposed on the sidewall of the second part, the second part is recessed, and the first dielectric layer and / or the second dielectric layer are used to protect the light-emitting diode to prevent abnormalities such as short circuits.

[0028] According to the present invention, preferably, the surface of one side of the first semiconductor layer of the main body has a roughened structure, and the roughened structure is produced by etching.

[0029] In some embodiments of the present invention, preferably, the surface of one side of the second semiconductor layer of the main body has a third dielectric layer, the third dielectric layer includes titanium oxide, the third dielectric layer is arranged between the main body and the first dielectric layer, and the first dielectric layer and the second dielectric layer sequentially cover the side of the third dielectric layer.

[0030] In these embodiments, preferably, at the side of the third dielectric layer covering, the total thickness of the first dielectric layer and the second dielectric layer is not less than 0.5 micrometers, and the distance between the third dielectric layer and the edge of the first portion is not less than 0.5 micrometers.

[0031] According to the present invention, preferably, the material of the first dielectric layer is silicon oxide, and the material of the second dielectric layer is silicon nitride. The thickness of the first dielectric layer is 0.1 micron to 0.5 micron; the thickness of the second dielectric layer is 0.15 micron to 0.3 micron, 0.3 micron to 0.8 micron, or 0.8 micron to 2 micron, the width of the first dielectric layer is 1 micron to 20 microns, and the width of the second dielectric layer is 1 micron to 20 microns.

[0032] According to the present invention, in some embodiments, preferably, part of the first dielectric layer is removed and the second dielectric layer is exposed from the first dielectric layer.

[0033] In these embodiments, preferably, the second dielectric layer is provided with slots or holes, and the first dielectric layer is exposed from the slots or holes.

[0034] In these embodiments, preferably, the grooves or holes are arranged around the semiconductor layer.

[0035] According to the present invention, in some embodiments, preferably, the first dielectric layer and the second dielectric layer of the supporting structure are a single dielectric layer.

[0036] The invention also discloses a display device, which has a bracket and a circuit board, and also includes the micro light emitting diode in the above technical solution.

[0037] The beneficial effects of the present invention include:

[0038] 1. Using a first dielectric layer disposed on the main body and thinner than the second dielectric layer as a stress regulating layer to adjust the contact stress between the second dielectric layer and the semiconductor layer sequence;

[0039] 2. In fact, the thickness of the bridging portion has a greater impact on the transfer yield. By removing the first dielectric layer of the bridging portion between the support structure and the semiconductor layer sequence, the purpose of taking the transfer yield into consideration can be achieved.

[0040] Other effects of the present invention will be gradually described in conjunction with specific embodiments. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] The drawings are used to provide a further understanding of the present invention and constitute a part of the specification. Together with the embodiments of the present invention, they are used to explain the present invention and do not constitute a limitation to the present invention. In addition, the drawing data is a description summary and is not drawn to scale.

[0042] Figures 1a to 1c : Schematic cross-sectional structure diagram, top view structure diagram (top surface view), and bottom view structure diagram (bottom surface view) of Embodiment 1 of the present invention;

[0043] Figure 2 : Schematic cross-sectional structure diagram of Embodiment 2 of the present invention;

[0044] Figure 3 : Schematic cross-sectional structure diagram of Embodiment 3 of the present invention;

[0045] Figure 4a and Figure 4b : Schematic cross-sectional structure diagram and top view structure diagram of Embodiment 4 of the present invention;

[0046] Figure 5a and Figure 5b : Schematic cross-sectional structure diagram and top view structure diagram of Embodiment 5 of the present invention;

[0047] Figure 6a and Figure 6b : Schematic cross-sectional structure diagram and top view structure diagram of Embodiment 6 of the present invention;

[0048] Figure 7a and Figure 7b : Schematic cross-sectional structure diagram and top view structure diagram of Embodiment 7 of the present invention;

[0049] Figure 8a and Figure 8b : Schematic cross-sectional structure diagram and bottom view structure diagram of Embodiment 8 of the present invention;

[0050] Figure 9a and Figure 9b : Schematic cross-sectional structure diagram and bottom view structure diagram of Embodiment 9 of the present invention;

[0051] Figures 10 to 14 : Schematic structure diagram of Embodiment 10 of the present invention;

[0052] Figure 15a and Figure 15b : Schematic cross-sectional structure diagram and bottom view structure diagram of Embodiment 11 of the present invention;

[0053] Figure 16a and Figure 16b : Schematic cross-sectional structure diagram and bottom view structure diagram of Embodiment 12 of the present invention;

[0054] Figure 17a and Figure 17b : Schematic cross-sectional structure diagram and bottom view structure diagram of some embodiments in Embodiment 12 of the present invention;

[0055] Figure 18a and Figure 18b : Schematic cross-sectional structure diagram and top view structure diagram of Embodiment 13 of the present invention;

[0056] Figure 19 : Top view structure diagram of some embodiments in Embodiment 13 of the present invention;

[0057] Figure 20 : Schematic cross-sectional structure diagram of Embodiment 14 of the present invention.

[0058] List of reference numerals: 100, main body; 101, first part; 102, second part; 111, first semiconductor layer; 112, second semiconductor layer; 113, active layer; 200, support structure; 201, anchor structure; 210, first dielectric layer; 220, second dielectric layer; 230, third dielectric layer; 300, substrate; 400, cavity; 500, substrate; 600, sacrificial bonding layer; 700, film compression imprinting; 800, bracket; 810, current; A1, first platform; A2, second platform; A3, third platform; F, fracture surface. Detailed embodiments

[0059] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are some, but not all, of the embodiments of the present invention. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.

[0060] Refer to in combination Figure 1a , Figure 1b and Figure 1c, in the first embodiment of the present invention, a micro-light-emitting component is provided, having a body 100 with a semiconductor layer sequence, that is, the part of the body 100 where the micro-light-emitting diodes emit light. The body 100 is connected to a substrate 300 through a support structure 200. The semiconductor layer sequence includes a first semiconductor layer 111, a second semiconductor layer 112, and an active layer 113 located therebetween. The material of the semiconductor layer sequence is a gallium nitride system. The present invention mainly explains the film-forming stress between the gallium nitride-based and insulating dielectric materials, and designs a matching scheme based on the influence of the surface contact between gallium nitride and silicon oxide or silicon nitride.

[0061] In this embodiment, in the cross-sectional view, the top surface area of the first semiconductor layer 111 is larger than the top surface area of the second semiconductor layer 112, and the top surface area of the first semiconductor layer 111 is larger than the top surface area of the active layer 113. The centers of the first semiconductor layer 111, the second semiconductor layer 112, and the active layer 113 are substantially coincident in the vertical projection plane. The semiconductor layer sequence includes a first part 101 far from the substrate and a second part 102 close to the substrate. The projection of the first part 101 in the horizontal plane is larger than the projection of the second part 102 in the horizontal plane. The first part 101 is disposed on the second part 102, and the support structure 200 extends from below the first part 101 and the side of the second part 102 to the substrate 300. In this embodiment, the first part 101 is an N-type semiconductor layer, and the second part 102 is an N-type semiconductor layer, a P-type semiconductor layer, and an active layer composed of quantum wells located therebetween.

[0062] One end of the support structure 200 is directly or indirectly connected to the micro-light-emitting diode body 100, and one end is directly or indirectly connected to the substrate 300. The support structure 200 includes at least a first dielectric layer 210 and a second dielectric layer 220. Define one side surface of the first semiconductor layer 111 of the body 100 as the first surface, and define one side surface of the second semiconductor layer 112 of the body as the second surface. The first dielectric layer 210 is connected to the second surface of the semiconductor layer sequence / body 100. The first surface and the second surface are oppositely arranged, or directly cover the second surface of the semiconductor layer sequence / body 100, and the second dielectric layer 220 covers the surface of the first dielectric layer 210. The first dielectric layer 210 is at least partially disposed between the second dielectric layer 220 and the semiconductor layer sequence. The material of the first dielectric layer 210 is different from the material of the second dielectric layer 220. Compared with two different materials and a same material, the stress regulation of a single-layer material is easily limited by the stress of the film-forming equipment and control conditions. The present invention can easily balance the residual stress generated in the process by two dielectric materials, and relatively generate a greater elastic reaction force.

[0063] The main body 100 composed of a semiconductor layer sequence has a gap with the upper surface of the substrate 300. Considering that the bottom surface of the main body 100 is also provided with a first electrode 121 electrically connected to the first semiconductor layer 111 and a second electrode 122 electrically connected to the second semiconductor layer 112, the reserved gap distance D1 is 0.5 micrometers to 3 micrometers. In this embodiment, the gap distance D1 is the distance from the second dielectric layer 220 to the upper surface of the substrate 300. The gap is used to leave a downward displacement space for the micro light-emitting diode when transferring the die by film pressing, to avoid the die being damaged by the substrate 300 or the patterns thereon.

[0064] In this embodiment, the support structure 200 forms a bridge arm, and the micro light-emitting diode is suspended above the substrate 300 through the bridge arm. The bridge arm and the substrate 300 form a cavity 400, and the semiconductor layer sequence of the micro light-emitting diode is located inside or outside the cavity 400. In this embodiment, the semiconductor layer sequence is located outside the cavity 400.

[0065] The thickness of the second dielectric layer 220 is 1.5 times to 10 times the thickness of the first dielectric layer 210. The relatively thin first dielectric layer 210 is mainly used to eliminate the stress in the manufacturing process and avoid the rupture of the support structure 200 caused by stress release during the bonding process. The second dielectric layer 220 is mainly used to provide bridging between the die and the substrate during transfer. The thickness of the second dielectric layer 220 is significantly greater than that of the first dielectric layer 210, and at the same time, the stress regulation difficulty of the support structure 200 is reduced by using the different materials and film-forming stress differences of the two.

[0066] In this embodiment, preferably, the first dielectric layer 210 and the second dielectric layer 220 in the support structure 200 are each one layer. The material of the first dielectric layer 210 is silicon oxide, and the first dielectric layer 210 at least includes materials in the negative stress direction. The material of the second dielectric layer 220 at least includes materials in the positive stress direction. And the absolute value of the unit positive stress of the second dielectric layer 220 is less than the absolute value of the unit negative stress of the first dielectric layer 210, which is beneficial to regulating the overall stress condition. The first dielectric layer 210 is connected to the semiconductor layer sequence of the main body 100, and the material of the second dielectric layer 220 is silicon nitride. In this embodiment, the stress of silicon oxide is 0 to -200 MPa, and the stress of silicon nitride is -200 MPa to +200 MPa.

[0067] The first dielectric layer 210 and / or the second dielectric layer 220 extend downward along the side surface of the main body 100 of the micro light-emitting diode and basically cover the bottom surface of the main body 100. The first electrode 121 and the second electrode 122 are exposed from the first dielectric layer 210 and / or the second dielectric layer 220 on the bottom surface.

[0068] In this embodiment, the first dielectric layer 210 and / or the second dielectric layer 220 can be located on both sides of the main body 100 or on one side of the main body 100.

[0069] In this embodiment, the support structure 200 includes a cementitious material, an inorganic medium, or a metal as the fixed anchor 201. Preferably, a cementitious material is used as the fixed anchor 201. The fixed anchor 201 is directly disposed on the substrate. One end of the first dielectric layer 210 and / or the second dielectric layer 220 is disposed on the fixed anchor 240. The first dielectric layer 210 and / or the second dielectric layer 220 are indirectly connected to the substrate 300 through the fixed anchor 201. In some embodiments, the fixed anchor 201 is located on both sides of the main body 100.

[0070] See Figure 2 , in the second embodiment of the present invention, a roughened or patterned area is formed by etching on the first surface. The entire surface can be a roughened surface, or a partial area can be a roughened surface. A third dielectric layer 230 is disposed between the main body 100 and the support structure 200. The material of the third dielectric layer 230 can be an insulating reflective layer. The insulating reflective layer, for example, is a DBR and includes titanium oxide. Titanium oxide is easily damaged by the etching during the roughening process. Therefore, in this embodiment, the side portion of the third dielectric layer 230 near the edge of the main body 100 is covered by the first dielectric layer 210 to prevent the third dielectric layer 230 from being exposed. The first dielectric layer 210 extends from the third dielectric layer 230 to the lower surface of the first semiconductor layer 111. The distance D2 between the edge of the third dielectric layer 230 and the edge of the main body 100 is not less than 0.5 micrometers. The first dielectric layer 210 and / or the second dielectric layer 220 reserve sufficient contact distance. It can also be understood that the width of the first dielectric layer 210 and / or the second dielectric layer 220 covering the bottom of the first portion 101 is not less than 0.5 micrometers. In the process, the third dielectric layer 230 is a discontinuous layer to avoid complicating the stress regulation conditions. The first dielectric layer 210 is located on the side of the support structure 200 away from the gap. A part of the first dielectric layer 210 is removed, and the second dielectric layer 220 is exposed from the first dielectric layer 210.

[0071] In this embodiment, the portion of the first dielectric layer 210 exposed from below the first semiconductor layer 111 is removed. The support structure 200 blocked by the first semiconductor layer 111 includes the first dielectric layer 210 and the second dielectric layer 220, and the exposed support structure 200 is composed of the second dielectric layer 220, which extends and connects to the anchor structure 201 or extends to the substrate through the second dielectric layer 220.

[0072] See Figure 3, in the third embodiment of the present invention, on the basis of Embodiment 2, the first dielectric layer 210 is further removed, that is, the first dielectric layer 210 extends along the outer edge of the main body 100, and the distance between the first dielectric layer 210 and the outer edge of the main body 100 is not greater than 0.2 micrometers. A fracture position of the second dielectric layer 220 is preset on the exposed part of the support structure 200 to ensure that during the process of pressing the film and stamping the transfer plate, the fracture surface of the support structure 200 is controlled to be as close as possible to the main body 100, avoiding excessive residue of the support structure 200 and affecting the product application.

[0073] See Figure 4a and Figure 4b , in the fourth embodiment of the present invention, another micro-light emitting component is provided, including a main body 100, a support structure 200, and a substrate 300. The support structure 200 extends from the surface of the substrate 300 to the side surface and / or the upper surface of the main body. Among them, the second dielectric layer 220 covers the upper surface of the main body 100, the first dielectric layer 210 covers the second dielectric layer 220, at least part of the support structure 200 on the upper surface of the micro-light emitting diode is removed to expose the second dielectric layer 220, and the second dielectric layer 220 forms a mesa on the surface of the main body 100. The first dielectric layer 210 is removed from the central region of the upper surface of the micro-light emitting diode to near the edge of the upper surface of the micro-light emitting diode. The distance between the first dielectric layer 210 of the support structure 200 and the edge of the main body 100 in the horizontal and vertical projection planes is not greater than 0.5 micrometers, ensuring that in the process, the support structure 200 has sufficient bonding strength and can meet the fracture requirements of the transfer plate.

[0074] A third dielectric layer 230 is provided on the bottom surface of the main body. The third dielectric layer 230 can be an insulating reflective layer or an inorganic insulating layer, and the first electrode 121 and the second electrode 122 are exposed from the third dielectric layer 230.

[0075] See Figure 5a and Figure 5b , in the fifth embodiment of the present invention, the difference from Embodiment 4 is that more of the first dielectric layer 210 is removed on the support structure 200. In the vertical projection plane, the first dielectric layer 210 is arranged outside the main body 100 to control the distance between the fracture surface and the main body 100, avoiding the first dielectric layer 210 remaining on the first surface of the main body. In this embodiment, the first surface is a preset light-emitting surface, avoiding affecting the light pattern of the product.

[0076] See Figure 6a and Figure 6b , in the sixth embodiment of the present invention, the difference from Embodiment 5 is that the removal amount of the first dielectric layer 210 is reduced, and part of the first dielectric layer 210 above the main body 100 is retained, and a ring-shaped groove is dug on the surface of the first dielectric layer 210.

[0077] See Figure 7a andFigure 7b In the seventh embodiment of the present invention, a micro-light-emitting component is provided, having a body 100 with a semiconductor layer sequence, that is, the part of the body 100 where the micro-light-emitting diode emits light. The body 100 is connected to a substrate 300 through a support structure 200. The semiconductor layer sequence includes a first semiconductor layer 111, a second semiconductor layer 112, and an active layer 113 located therebetween.

[0078] In this embodiment, in a cross-sectional view, the support structure 200 includes at least a first dielectric layer 210 and a second dielectric layer 220. The second dielectric layer 220 is disposed on the upper surface of the semiconductor layer sequence / body 100, or covers the upper surface of the semiconductor layer sequence / body 100, and the first dielectric layer 210 covers the surface of the second dielectric layer 220.

[0079] The thickness of the second dielectric layer 220 is 1.5 to 10 times the thickness of the first dielectric layer 210. The relatively thin first dielectric layer 210 is mainly used to eliminate the stress in the manufacturing process and avoid the rupture of the support structure 200 caused by stress release during the bonding process. The second dielectric layer 220 is mainly used to provide a bridge for the die and the substrate 300 during transfer. The thickness of the second dielectric layer 220 is significantly greater than that of the first dielectric layer 210, and at the same time, the stress regulation difficulty of the support structure 200 is reduced by using the different materials and film-forming stress differences of the two.

[0080] In this embodiment, the material of the first dielectric layer 210 is silicon oxide, the first dielectric layer 210 is connected to the semiconductor layer sequence of the body 100, and the material of the second dielectric layer 220 is silicon nitride. In some embodiments, the first dielectric layer 210 and / or the second dielectric layer 220 may extend downward along the upper surface of the body 100 of the micro-light-emitting diode and cover the side and / or bottom surface of the body 100. In this embodiment, part of the first dielectric layer 210 is removed to expose the second dielectric layer 220, improving the yield during transfer, and the first electrode 121 and the second electrode 122 are exposed from the first dielectric layer 210 and / or the second dielectric layer 220 on the bottom surface.

[0081] In this embodiment, the first dielectric layer 210 and / or the second dielectric layer 220 may be located on both sides of the body 100 or on one side of the body 100.

[0082] In this embodiment, the support structure 200 includes an adhesive material, an inorganic dielectric, or a metal as a fixed anchor 201. Preferably, an adhesive material is used as the fixed anchor 201. The fixed anchor 201 is directly disposed on the substrate 300, and one end of the first dielectric layer 210 and / or the second dielectric layer 220 is disposed on the fixed anchor 201. The first dielectric layer 210 and / or the second dielectric layer 220 are indirectly connected to the substrate 300 through the fixed anchor 201.

[0083] See Figure 8a andFigure 8b In the eighth embodiment of the present invention, a micro-light-emitting component is provided. In a cross-sectional view, the support structure 200 includes at least a first dielectric layer 210 and a second dielectric layer 220. The first dielectric layer 210 is disposed on the lower surface of the semiconductor layer sequence / main body 100, and the second dielectric layer 220 covers the lower surface of the first dielectric layer 210. The second dielectric layer 220 extends from the lower surface of the first dielectric layer 210 to the substrate 300 and is directly or indirectly connected to the substrate 300. The part of the support structure 200 exposed from the lower surface of the semiconductor layer sequence / main body 100 is the second dielectric layer 220.

[0084] Wherein the thickness of the second dielectric layer 220 is 1.5 to 10 times the thickness of the first dielectric layer 210. The relatively thin first dielectric layer 210 is mainly used to eliminate the stress in the manufacturing process and avoid the rupture of the support structure 200 caused by stress release during the bonding process. The second dielectric layer 220 is mainly used to provide a bridge between the die and the substrate 300 during transfer. The thickness of the second dielectric layer 220 is significantly greater than that of the first dielectric layer 210. At the same time, due to the different materials and film-forming stress differences of the two, the difficulty of stress regulation of the support structure 200 is reduced.

[0085] In this embodiment, the material of the first dielectric layer 210 is silicon oxide, the first dielectric layer 210 is connected to the semiconductor layer sequence of the main body 100, and the material of the second dielectric layer 220 is silicon nitride.

[0086] In this embodiment, the first dielectric layer 210 and / or the second dielectric layer 220 can be located on both sides of the main body 100 or on one side of the main body 100. In the vertical projection plane, the projection of the first dielectric layer 210 is within the projection of the main body 100, and the distance between the first dielectric layer 210 and the edge of the main body 100 is not greater than 0.2 microns.

[0087] In this embodiment, the support structure 200 includes an adhesive material, an inorganic dielectric, or a metal as the fixed anchor 201. Preferably, an adhesive material is used as the fixed anchor 201. The fixed anchor 201 is directly disposed on the substrate 300. One end of the first dielectric layer 210 and / or the second dielectric layer 220 is disposed on the fixed anchor 201, and the first dielectric layer 210 and / or the second dielectric layer 220 is indirectly connected to the substrate 300 through the fixed anchor 201.

[0088] Referring to Figure 9a and Figure 9b , in the ninth embodiment of the present invention, a part of the exposed portion of the first dielectric layer 210 can be retained. For example, by grooving or opening holes in the first dielectric layer 210, the second dielectric layer 220 can be exposed from the groove or hole. In this embodiment, preferably, the groove V or hole is disposed around the semiconductor layer sequence, and in particular, the hole or groove can be disposed below the edge of the first semiconductor layer 111.

[0089] Referring to Figures 10 to 14 , in the tenth embodiment of the present invention, a method for mass transfer of micro light-emitting diodes is provided, including:

[0090] Referring to Figure 10 , Step 1, provide a growth substrate 500, fabricate a semiconductor layer sequence on the growth substrate 500, the semiconductor layer sequence includes: a first semiconductor layer 111, a second semiconductor layer 112, and an active layer 113 located therebetween. By locally patterning and removing the second semiconductor layer 112 and the active layer 113 to expose the first semiconductor layer 111, an epitaxial pattern including a first platform A1 and a second platform A2 composed of the first semiconductor layer 111, and a third platform A3 composed of the second semiconductor layer 112 is fabricated on the semiconductor layer sequence. A first dielectric layer 210 and a second dielectric layer 220 are sequentially covered on the semiconductor layer sequence. In this embodiment, a third dielectric layer 230 may be provided between the first dielectric layer 210 and the semiconductor layer sequence, and the first dielectric layer 210 covers the side surface of the third dielectric layer 230.

[0091] On the first platform A1 and the third platform A3, the first dielectric layer 210, the second dielectric layer 220, and the third dielectric layer 230 have openings. A first electrode 121 is fabricated on the opening of the first platform A1, and a second electrode 122 is fabricated on the opening of the third platform A3. The first wafer is fabricated through the above processes.

[0092] Referring to Figures 11 to 12 , Step 2, cover a sacrificial bonding layer 600, an anchor 201, and a substrate 300 on the surface of the first wafer. The sacrificial bonding layer 600 is a removable metal material. Specifically, the sacrificial bonding layer 600 and the substrate 300 are sequentially covered on the surface of the second dielectric layer 220. The second wafer is fabricated through the above processes.

[0093] Referring to Figure 13 , Step 3, peel off the growth substrate 500; remove a part of the semiconductor layer sequence. In this embodiment, a part of the first semiconductor layer 111 is removed to expose the first dielectric layer 210, forming a plurality of separated micro light-emitting diode bodies. The exposed first dielectric layer 210 is removed. In some embodiments of this embodiment, the first dielectric layer 210 may also be further removed by over-etching, that is, the first dielectric layer 210 extends along the outer edge of the main body 100, and the distance between the first dielectric layer 210 and the outer edge of the main body 100 is not greater than 0.2 microns.

[0094] Remove the sacrificial bonding layer 600 to form a support structure 200 including the second dielectric layer 220. The support structure 200 may be composed of the first dielectric layer 210 and the second dielectric layer 220. The micro light-emitting diodes are indirectly connected to the substrate through the support structure 200 and glue.

[0095] See Figure 14 , Step 4, use a mold to imprint 700 micro light-emitting diodes in a large quantity. Since the first dielectric layer 210 is shorter than the second dielectric layer 220, the support structure 200 breaks at the end face of the first dielectric layer 210 close to the edge of the main body 100 during the imprinting process. The dotted line in the figure is the pre-fracture surface, minimizing the residue of the support structure 200 on the micro light-emitting diodes.

[0096] See Figure 15a and 15b , in the eleventh embodiment of the present invention, a micro light-emitting diode is provided, including:

[0097] A semiconductor layer sequence, at least including a first semiconductor layer 111, a second semiconductor layer 112, and an active layer 113 located therebetween. The semiconductor layer sequence is at least composed of a first part 101 and a second part 102. The projection of the first part 101 on the horizontal plane is larger than the projection of the second part 102 on the horizontal plane. The first part 101 is disposed above the second part 102, and the lower surface of the first part 101 exposes from the second part 102.

[0098] A first electrode 121, electrically connected to the first semiconductor layer 111, and a second electrode 122, electrically connected to the second semiconductor layer 112.

[0099] A residual support structure 200' is disposed on the lower surface of the first part 101, and the end of the residual support structure 200' far from the semiconductor layer sequence has a fracture surface.

[0100] The residual support structure 200' at least includes a first dielectric layer 210 and a second dielectric layer 220; the material of the first dielectric layer 210 is different from that of the second dielectric layer 220. The first dielectric layer 210 is located between the second dielectric layer 220 and the semiconductor layer sequence. In this embodiment, the first dielectric layer 210 covers the surface of the first semiconductor layer 111, and the second dielectric layer 220. Wherein the thickness of the second dielectric layer 220 is 1.5 to 10 times the thickness of the first dielectric layer 210. The material of the first dielectric layer 210 is silicon oxide, and the material of the second dielectric layer 220 is silicon nitride. Wherein the thickness of the first dielectric layer 210 is 0.1 to 0.5 microns; the thickness of the second dielectric layer 220 is 0.15 to 0.3 microns, 0.3 to 0.8 microns, or 0.8 to 2 microns. In this embodiment, the first dielectric layer 210 and the second dielectric layer 220 of the support structure are single dielectric layers.

[0101] At least a third dielectric layer 230 is further provided between the first dielectric layer 210 and the main body 100. The material of the third dielectric layer 230 is an insulating mirror. The third dielectric layer 230 includes titanium oxide and is, for example, a stack of dielectric layers. On the side of the third dielectric layer 230 away from the main body 100 and on the side close to the edge of the main body 100, the first dielectric layer 210 is provided. In this embodiment, the first dielectric layer 210 and the second dielectric layer 220 are sequentially provided on the surface of the third dielectric layer 230. The distance of the third dielectric layer 230 from the edge of the main body 100 is not less than 0.5 micrometers. In this embodiment, the total thickness of the first dielectric layer 210 and / or the second dielectric layer 220 covering the third dielectric layer 230 is not less than 0.5 micrometers. In particular, for the part close to the edge of the first part 101 of the main body 100, the total thickness of the first dielectric layer 210 and / or the second dielectric layer 220 on the side of the third dielectric layer 230 is not less than 0.5 micrometers. The third dielectric layer 220 is provided below the first part 101 or the second part 102 to prevent the etching fluid from flowing along the side wall of the first part 101 to the third dielectric layer 230 when roughening or patterning is performed on the first surface. Further, the first dielectric layer 210 and / or the second dielectric layer 220 can be used to construct a protection to prevent the etching fluid from damaging the more active third dielectric layer 230.

[0102] See Figure 16a and Figure 16b In the twelfth embodiment of the present invention, the difference from the eleventh embodiment is that at the edge of the main body 100, the first dielectric layer 210 and the second dielectric layer 220 extend outward, the first dielectric layer 210 is partially retracted relative to the second dielectric layer 220, the length of the first dielectric layer 210 is shorter than the length of the second dielectric layer 220, the distance of at least a part of the first dielectric layer 210 from the outer edge of the main body 100 is not greater than 0.2 micrometers, and the second dielectric layer 220 has a fracture surface F near the edge of the main body 100.

[0103] See Figure 17a and Figure 17b In some embodiments, the distance D3 of the fracture surface F from the first dielectric layer 210 is not less than 0.2 micrometers, and in the vertical projection plane, the fracture surface F is located within the projection of the semiconductor layer sequence / main body 100. The distance D4 of the end face of the second dielectric layer 220 of the fracture surface F from the edge of the main body 100 is not less than 0.2 micrometers. In this embodiment, the first dielectric layer 210 and the second dielectric layer 220 can entirely or partially cover the exposed part of the bottom surface of the first part 101.

[0104] See Figure 18a and 18b, in the thirteenth embodiment of the present invention, a micro light-emitting diode is provided, including: a semiconductor layer sequence, at least including a first semiconductor layer 111, a second semiconductor layer 112, and an active layer 113 located therebetween. The fracture surface of the remaining support structure 200' is located on the sidewall of the semiconductor layer sequence, and the distance D5 from the fracture surface F to the main body edge is not greater than 0.5 micrometers. A first dielectric layer 210 is disposed above the first semiconductor layer 111, and a second dielectric layer 220 is located between the first dielectric layer 210 and the first semiconductor layer 111. The first dielectric layer 210 and the second dielectric layer 220 extend outward from within the first semiconductor layer 111 to form the remaining support structure 200'. At least at the edge of the first semiconductor layer 111, the area of the first dielectric layer 210 is smaller than the area of the second dielectric layer 220. In some embodiments, the distance from the edge of the first dielectric layer 210 to the edge of the second dielectric layer 220 on the remaining support structure 200' is not greater than 5 micrometers.

[0105] See Figure 19 , in some embodiments, the first dielectric layer 210 located on the top surface of the first semiconductor layer 111 completely covers the second dielectric layer 220, and the area of the first dielectric layer 210 is smaller than the area of the second dielectric layer 220. Only a single layer of the second dielectric layer 220 is provided on the sidewall of the micro light-emitting diode.

[0106] See Figure 20 , in the fourteenth embodiment of the present invention, a display device is provided, having a bracket 700, a circuit board 710, and the micro light-emitting diodes fabricated in the above embodiments.

[0107] The specific embodiments of the present invention are only explanations of the present invention and not limitations thereof. Those skilled in the art can make modifications to the embodiments according to needs after reading this specification, but as long as they are within the scope of the claims of the present invention, they are protected by the patent law.

Claims

1. A micro-light-emitting component, comprising: A substrate, a body having a semiconductor layer sequence, and a support structure that fixes the body to the substrate. It is characterized by including: The support structure at least includes a first dielectric layer and a second dielectric layer; the material of the first dielectric layer is different from that of the second dielectric layer, the first dielectric layer is located between the second dielectric layer and the semiconductor layer sequence, and the second dielectric layer is used to connect the support structure and the body. The first dielectric layer is located on the surface of the second dielectric layer. There is a gap between the body and the upper surface of the substrate. Wherein the thickness of the second dielectric layer is greater than that of the first dielectric layer. The material of the first dielectric layer is silicon oxide, the first dielectric layer is connected to the semiconductor layer sequence of the body, the material of the second dielectric layer is silicon nitride, wherein the thickness of the first dielectric layer is 0.1 micrometer to 0.5 micrometers; the thickness of the second dielectric layer is 0.15 micrometers to 0.3 micrometers, 0.3 micrometers to 0.8 micrometers, or 0.8 micrometers to 2 micrometers, and the widths of the first dielectric layer and the second dielectric layer are 1 micrometer to 20 micrometers.

2. The micro-light-emitting component according to claim 1, characterized in that The thickness of the second dielectric layer is 1.5 times to 10 times that of the first dielectric layer.

3. A micro-light-emitting component according to claim 1, characterized in that The second dielectric layer is located on the body, and the first dielectric layer at least partially covers the outer surface of the second dielectric layer.

4. A micro-light emitting component according to claim 1, characterized in that, The first dielectric layer is located on the body, and the second dielectric layer at least partially covers the inner surface of the first dielectric layer.

5. A micro-light-emitting component according to claim 1, characterized in that, The semiconductor layer is a gallium nitride-based material, the semiconductor layer sequence at least consists of a first semiconductor layer, an active layer, and a second semiconductor layer, the semiconductor layer sequence includes a first part far from the substrate and a second part close to the substrate, the projection of the first part on the horizontal plane is larger than the projection of the second part on the horizontal plane, the second part at least includes the active layer and the second semiconductor layer, and the first dielectric layer and / or the second dielectric layer are arranged on the side wall of the second part.

6. The micro-light-emitting component according to claim 1, characterized in that, The support structure includes an adhesive, an inorganic dielectric, or a metal as a fixed anchor, and the first dielectric layer and / or the second dielectric layer are connected to the substrate through the fixed anchor.

7. A micro-light emitting component according to claim 1, characterized in that, The second dielectric layer exposes from the first dielectric layer, and the body fixes the semiconductor layer sequence directly or indirectly to the substrate through the second dielectric layer.

8. The micro-light emitting component according to claim 7, characterized in that, The first dielectric layer is provided with a slot or an opening, and the second dielectric layer exposes from the slot or the opening.

9. A micro-light emitting component according to claim 8, characterized in that, The slot or the opening is arranged around the semiconductor layer.

10. A micro-light emitting component according to claim 1, characterized in that, The first dielectric layer and the second dielectric layer in the support structure are each a single-layer structure.

11. A micro-light emitting component according to claim 1, wherein, The thickness of the second dielectric layer is variable, and the thickness of at least part of the second dielectric layer far from the body is less than the thickness of the second dielectric layer located below the body.

12. The micro-light emitting component according to claim 1, characterized in that, One side of the body far from the substrate has a roughened structure, and the roughened structure is made by etching.

13. A micro-light emitting component according to claim 1, characterized in that, One side of the body close to the substrate has a third dielectric layer, the third dielectric layer includes titanium oxide, the third dielectric layer is arranged between the body and the first dielectric layer, and the first dielectric layer and the second dielectric layer sequentially cover the side part of the third dielectric layer.

14. A micro-light emitting component according to claim 1, characterized in that, The first dielectric layer at least includes a material in the negative stress direction, and the material of the second dielectric layer at least includes a material in the positive stress direction.

15. A micro light-emitting diode, including: A semiconductor layer sequence, at least including a first semiconductor layer, a second semiconductor layer, and an active layer located therebetween. The semiconductor layer sequence is at least composed of a first part and a second part. The projection of the first part on the horizontal plane is larger than that of the second part on the horizontal plane. The first part is arranged above the second part, and the lower surface of the first part is exposed from the second part; A first electrode, electrically connected to the first semiconductor layer, and a second electrode, electrically connected to the second semiconductor layer; A remaining support structure is arranged on the lower surface of the first part; It is characterized in that the remaining support structure at least includes a first dielectric layer and a second dielectric layer; the material of the first dielectric layer is different from that of the second dielectric layer. The first dielectric layer is located between the second dielectric layer and the semiconductor layer sequence. The material of the first dielectric layer is silicon oxide, and the material of the second dielectric layer is silicon nitride. Wherein the thickness of the second dielectric layer is 1.5 times to 10 times that of the first dielectric layer.

16. A micro light-emitting diode according to claim 15, characterized in that, The second part at least includes an active layer and a second semiconductor layer. The first dielectric layer and / or the second dielectric layer are arranged on the side wall of the second part.

17. A micro light-emitting diode according to claim 15, wherein, The first surface on the side of the first semiconductor layer of the main body has a roughened structure, and the roughened structure is fabricated by etching.

18. A micro light-emitting diode according to claim 15, wherein, The second surface on the side of the second semiconductor layer of the main body has a third dielectric layer. The first surface and the second surface are arranged oppositely. The third dielectric layer includes titanium oxide. The third dielectric layer is arranged between the main body and the first dielectric layer. The first dielectric layer and the second dielectric layer sequentially cover the side part of the third dielectric layer.

19. A micro light-emitting diode according to claim 18, wherein, At the side part where the third dielectric layer is covered, the total thickness of the first dielectric layer and the second dielectric layer is not less than 0.5 micrometers, and the distance between the third dielectric layer and the edge of the first part is not less than 0.5 micrometers.

20. A micro light-emitting diode according to claim 15, characterized in that, Wherein the thickness of the first dielectric layer is 0.1 micrometer to 0.5 micrometers; the thickness of the second dielectric layer is 0.15 micrometers to 0.3 micrometers, 0.3 micrometers to 0.8 micrometers, or 0.8 micrometers to 2 micrometers. The width of the first dielectric layer is 1 micrometer to 20 micrometers, and the width of the second dielectric layer is 1 micrometer to 20 micrometers.

21. A micro light-emitting diode according to claim 15, characterized in that, The first dielectric layer is partially removed, and the second dielectric layer is exposed from the first dielectric layer.

22. A micro light-emitting diode according to claim 15, wherein, The first dielectric layer is provided with a slot or an opening, and the second dielectric layer is exposed from the slot or the opening.

23. A micro light-emitting diode according to claim 15, wherein The slot or the opening is arranged around the semiconductor layer.

24. A micro light-emitting diode according to claim 15, characterized in that, The first dielectric layer and the second dielectric layer of the support structure are single dielectric layers.

25. A micro light-emitting diode according to claim 15, characterized in that, One end of the remaining support structure away from the semiconductor layer sequence has a fracture surface.

26. A display device having a bracket and a circuit board, characterized in that, It also includes the micro light-emitting diode described in any one of claims 15 to 25.

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