Sensing device

Abstract

The present application discloses a sensing device and a display device, wherein the sensing device comprises a plurality of sensing combinations composed of a plurality of lenses and a plurality of sensing units. The plurality of sensing units are used to collect reflected light rays after passing through the plurality of lenses, and each sensing combination adopts the architecture of one sensing unit corresponding to a plurality of lenses to provide high-accuracy fingerprint recognition.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to a sensing device, in particular, an optical sensing device capable of improving recognition accuracy. BACKGROUND

[0002] With the maturation of biometric recognition technology, many different biological features can be used to identify the identity of a user. Among them, the fingerprint recognition technology has the advantages of high recognition rate and high accuracy, so it is often integrated into various electronic devices and widely used. For example, a user can directly manage an electronic device through fingerprint recognition without having to remember a password. Moreover, since the fingerprint recognition process is fast and difficult to imitate, it can provide good convenience or security.

[0003] Generally, the fingerprint recognition technology mainly uses a sensing device to sense the fingerprint pattern of a user, then acquires unique fingerprint features in the fingerprint pattern and stores them, or directly stores the fingerprint pattern. Then when the user performs fingerprint scanning again, the fingerprint sensing device senses the fingerprint pattern and acquires the fingerprint features, so as to compare them with the previously stored fingerprint features for recognition, or directly compare them with the previously stored fingerprint pattern. If they match, the identity of the user can be confirmed. Therefore, how to improve the accuracy of fingerprint recognition is an important issue. SUMMARY

[0004] The present disclosure provides a sensing device, which includes a plurality of sensing combinations. At least one of the plurality of sensing combinations includes at least two lenses and a sensing unit. The plurality of sensing combinations can allow the detected light to pass through the at least two lenses and be collected by the sensing unit.

[0005] The present disclosure provides a display device, which includes a display panel and a sensing device. The sensing device is disposed below the display panel and includes a plurality of sensing combinations. At least one of the plurality of sensing combinations includes at least two lenses and a sensing unit. The plurality of sensing combinations can allow the detected light to pass through the at least two lenses and be collected by the sensing unit. BRIEF DESCRIPTION OF DRAWINGS

[0006] Figure 1 FIG. 1 is a schematic view of a display device according to an embodiment of the present disclosure.

[0007] Figure 2A FIG. 3 is a top view of a sensing device according to an embodiment of the present disclosure.

[0008] Figure 2B FIG. 5 is a top view of a sensing device according to an embodiment of the present disclosure. Figure 2C FIG. 6 is an enlarged top view of a sensing device according to an embodiment of the present disclosure.

[0009] Figure 2DA side view of the sensing device along a tangent line according to an embodiment of the present disclosure.

[0010] Figure 2E A detailed structural view of the sensing device along a tangent line according to an embodiment of the present disclosure.

[0011] Figure 3A and Figure 3B A schematic diagram of the display device according to an embodiment of the present disclosure in processing a fingerprint signal under different lens designs and resolutions.

[0012] Figure 4A A top view of the sensing device according to another embodiment of the present disclosure.

[0013] Figure 4B A side view of the sensing device along a tangent line according to another embodiment of the present disclosure.

[0014] Figure 4C A side view of the sensing device along a tangent line according to another embodiment of the present disclosure.

[0015] Figure 5 A detailed structural view of the sensing device along a tangent line according to another embodiment of the present disclosure.

[0016] BRIEF DESCRIPTION OF DRAWINGS 5 - finger; 10 - display panel; 11 - substrate; 12 - protective layer; 13-15, 41-49 - insulating layer; 16 - display unit; 18 - control circuit; 20 - sensing device; 22 - lens; 22L - lower surface of the lens; 24 - light shielding layer; 28 - hole; 30 - sensing unit; 30U - upper surface of the sensing unit; 32 - sensing element; 32U - upper electrode; 32L - lower electrode; 32P, 32N - semiconductor layer; 33 - conductive layer; 34 - driving layer; 36I - intrinsic layer; 38 - substrate; 55 - end; 57 - turning point; 100 - display device; 120 - gate; 122, 124 - source / drain region; 126 - semiconductor layer; LT - light ray; A-A' - tangent line; SM - sensing combination; C - center point; SQ - minimum rectangle; R1, R2 - diagonal line; R3, R4 - reference line; R3', R4' - orthogonal center line; TH - lens thickness; TFT - thin film transistor. DETAILED DESCRIPTION

[0017] The use of ordinal terms such as "first", "second", etc., in the specification and claims to modify a claim element does not imply that the elements so qualified are to be ordered or ranked in the specification or claims. The use of ordinal terms such as "first", "second", etc., in the specification and claims to modify a claim element does not imply that the elements so qualified are to be ordered or ranked in the specification or claims.

[0018] In addition, the use of the term "including", "containing", "having" and / or "with" throughout this specification can be used interchangeably with other like terms such as "comprising", "characterized by", "comprised of", "including", or "characterized by", unless otherwise noted. Additionally, the use of "about", "approximately", "essentially", or "substantially" in reference to a given value of a quantity means that the quantity is within 20% of the given value, or within 10%, 5%, 3%, 2%, 1%, or 0.5% of the given value, as the case can be. In the present disclosure, the manner of measurement of a numerical value can be by optical microscopy or / and electron microscopy, but is not limited thereto.

[0019] Further, repeated usage of the terms "embodiment", "exemplary", "one embodiment", "another embodiment", "one example", "an example", "one implementation", "an implementation", etc. in the specification, does not necessarily refer to the same embodiment, but can refer to different embodiments. Additionally, the features or steps in the preceding description are not necessarily implemented in the same order as recited in the claims, nor do they need to be implemented in the same order as recited in the preceding description. Further, it is possible for steps to be added, removed, modified, etc. Also, the descriptions and examples in this disclosure comply with the then-current statutes, regulations, rules, and / or laws, and should not be construed as a limitation of the scope of the disclosure or as advice to practice outside the scope of the disclosure. Furthermore, in the present disclosure, the formation, connection, and / or coupling of one element to another can be by direct contact, by contact through one or more intervening elements, or by indirect contact.

[0020] Figure 1FIG. 1 is a schematic diagram of a display device 100 according to an embodiment of the present disclosure. The display device 100 includes a display panel 10, a protection layer 12, and a sensing device 20. The display panel 10 includes insulating layers 13-15, display units 16, and control circuits 18 disposed on a substrate 11. The protection layer 12 can provide a surface for a user’s finger 5 to press. The protection layer 12 can be made of at least one of cover glass, rubber, and polymer materials (e.g., PI, PEN, PC, polyurethane, polydimethylsiloxane, or / and PET), a mixture of the above-mentioned materials, or other suitable materials, but is not limited thereto. The protection layer 12 can include a single-layer material structure or a multi-layer material structure. The insulating layers 13-15 are disposed between the protection layer 12 and the substrate 11. The display units 16 can be light-emitting diodes (LEDs), organic light-emitting diodes (OLEDs), quantum dot light-emitting diodes (QD LEDs), or other suitable elements or combinations thereof, and are respectively controlled by the corresponding control circuits 18 to provide light rays LT toward a user. The above-mentioned light-emitting diodes can be micro LEDs or mini LEDs in terms of size. However, the shape, material, size, or type of the protection layer 12 and the display units 16 do not limit the scope of the present disclosure.

[0021] In the present embodiment, the sensing device 20 can be a fingerprint sensing device. When the user places the finger 5 on the protection layer 12 for fingerprint sensing, the light rays LT provided by the display units 16 are reflected to the sensing device 20. Since the peaks and valleys of the fingerprint reflect light rays, the reflected light rays received, collected, or sensed by the sensing device 20 include bright and dark stripes, which can be used to achieve the effect of fingerprint recognition. It is worth noting that the above-mentioned light rays LT are schematic light paths, and any light rays that can be sensed by the sensing device 20 can belong to the light rays LT of the present disclosure. In the present disclosure, the reflected light rays can be detected light rays, and the sensing assembly SM can allow the detected light rays to pass through the lenses 22 and be received, collected, and / or sensed by the sensing unit 30.

[0022] Figure 2A FIG. 2 is a top view of the sensing device 20 in the display device 100 according to an embodiment of the present disclosure. Figure 2B and Figure 2C FIG. 3 is an enlarged top view of the sensing device 20 in the display device 100 according to an embodiment of the present disclosure. Figure 2D FIG. 4 is a side view of the sensing device 20 along the tangent line A-A’ in the display device 100 according to an embodiment of the present disclosure. Figure 2EThis is a detailed structural diagram of the sensing device 20 in the display device 100 according to the present disclosure embodiment, along the tangent A-A'. The sensing device 20 includes a plurality of sensing assemblies SM, a light-shielding layer 24, a driving layer 34, a substrate 38, and insulating layers 41-44.

[0023] like Figure 2A As shown, the sensing device 20 includes a plurality of sensing assemblies SM, wherein at least one sensing assembly SM includes at least two lenses 22 and a sensing unit 30. The sensing device 20 may also optionally include a light-shielding layer 24 located between the lenses 22 and the sensing unit 30. The lenses 22 and / or light-shielding layers 24 between different sensing assemblies SM may be formed in the same continuous layer and / or the same process, but are not limited thereto. The light-shielding layer 24 has a plurality of holes 28 that can focus reflected light LT. In this embodiment, the hole 28 in top view may be a closed hole (not shown), which can prevent adjacent noise light (such as high-angle light or stray reflection light) from entering the sensing assembly SM, thereby improving the signal-to-noise ratio. The light-shielding layer 24 may include a single-layer material structure or a multi-layer material structure, and may be made of insulating material or metallic material, but is not limited thereto.

[0024] In this embodiment, the center point C of each lens 22 corresponds to a hole 28 on the light-shielding layer 24, thus having a light-focusing function. In this disclosure, "corresponds" refers to a hole 28 that partially or completely overlaps with the center point C of the lens 22 along the Z-axis direction. In one embodiment, the lens 22 may be symmetrical or asymmetrical, such as a perfect circle, ellipse, or other irregular shape, but is not limited thereto. The center point C may be defined by the intersection of at least two reference lines (e.g., diagonals R1 and R2) within the smallest virtual rectangle SQ surrounding a single lens 22 in a top view.

[0025] For the purpose of explanation, Figure 2A An embodiment of four adjacent sensing combinations SM in sensing device 20 is illustrated, wherein each sensing combination SM includes one sensing unit 30 and four lenses 22. In other embodiments, the number of sensing units 30 and lenses 22 in each sensing combination SM may be in other ratios, such as 1:2, 1:3, 1:5, or even 1:144, but is not limited thereto. The number of sensing units 30 and lenses 22 in multiple sensing combinations SM may be in the same ratio or in multiple different ratios. However, the ratio of the number of sensing units and lenses in each sensing combination does not limit the scope of this disclosure.

[0026] In this embodiment, the same cross-section can be obtained through the center point C of at least one lens 22, but a small, permissible displacement or error is allowed. For example, the permissible tolerance difference of the cut cross-section can be less than ±5 micrometers. Figure 2BAs shown, the tolerance differences between tolerance profile lines 1021 and 1022 and the precise profile tangent A-A' are represented by the symbols dt1 and dt2. Furthermore, the permissible tolerance for the rotation angle of the cutting profile can be less than 3°-5°, such as... Figure 2C As shown, the rotation angle tolerance is represented by the rotation angles θ1 and θ2 of the tolerance profiles 1023 and 1024. Figure 2B and Figure 2C The situations shown can occur simultaneously or selectively. The formulas described later in the instruction manual need to consider the case where a cross-section has two lenses and two holes. In this case, the tangent of the cross-section must pass through the center points of both lenses, and the center points of both lenses may occur simultaneously. Figure 2B or Figure 2C The same error shown, or occurring separately Figure 2B and Figure 2C The different errors shown do not limit the scope of this disclosure.

[0027] like Figure 2D As shown, the X, Y, and Z axes are perpendicular to each other, with the Z axis being the direction perpendicular to the substrate 38. d1 is defined as the distance along the Z axis from the sensing unit 30 to the corresponding hole 28, for example, the distance between the sensing unit 30 and the midpoint of the corresponding hole 28. In this embodiment, the midpoint of the hole 28 can be defined by taking the midpoint of the total thickness TH of the light-shielding layer 24 in the cross-section. d2 is defined as the distance along the Z axis from the lens 22 to the corresponding hole 28. L is defined as the maximum width of the lens 22 in the XY plane. The above values ​​can be obtained from the same cross-section, and the definitions related to the subsequent formulas are the same, so they will not be described in detail. In this way, the width of the lens 22 can sense different signals at the location of the fingerprint, thereby improving the recognition accuracy.

[0028] like Figure 2EAs shown, the sensing device 20 includes a sensing assembly SM (two lenses 22 and a sensing cell 30), a light-shielding layer 24, a driving layer 34, a substrate 38, and insulating layers 41-49. The driving layer 34 is disposed on the substrate 38 and can drive the sensing cell 30. The sensing cell 30 includes an upper electrode 32U, a lower electrode 32L, a low-doped intrinsic layer 36I disposed between the upper electrode 32U and the lower electrode 32L, a p-type semiconductor layer 32P disposed between the upper electrode 32U and the intrinsic layer 36I, and an n-type semiconductor layer 32N disposed between the lower electrode 32L and the intrinsic layer 36I. In an embodiment, the sensing cell 30 can optionally include a conductive layer 33. In this embodiment, the p-type semiconductor layer 32P is doped with a p-type impurity and the n-type semiconductor layer 32N is doped with an n-type impurity, however, the type of sensing cell 30 is not limited in the scope of the disclosure. The sensing cell 30 can convert the light LT passing through the lens into an electrical signal, which is transmitted through the stacked structure 34 to a processor chip (not shown) for analysis and comparison to verify a fingerprint. In this embodiment, the sensing cell 30 can be defined by the lower electrode 32L of the same potential, but is not limited in the scope of the disclosure.

[0029] In Figure 2D and Figure 2E In the embodiment shown, d1 can be the distance from the surface 30U (e.g., the upper surface of the p-type semiconductor layer 32P) of the sensing cell 30 to the middle of the corresponding hole 28, and d2 can be the distance from the lower surface 22L of the lens 22 closest to the sensing cell 30 to the middle of the corresponding hole 28. In this embodiment, the lower surface 22L of the lens 22 can be the end 55 of the curved surface of the lens 22 and a surface parallel to the XY plane (e.g., the surface of the substrate). In addition, in this embodiment, the end 55 of the curved surface of the lens 22 is located on the upper surface of the insulating layer 41. In other embodiments, the process of forming the conductive layer 33 can be omitted, and the p-type semiconductor layer 32P can be contacted by the upper electrode 32U, in which case the surface 30U of the sensing cell 30 receiving the light LT can be the upper surface of the upper electrode 32U.

[0030] In addition, the sensing device 20 further includes insulating layers 41-49, in which the insulating layer 41 and the insulating layer 42 are disposed between the lens 22 and the light-shielding layer 24, and the insulating layers 43 and 44 are disposed between the light-shielding layer 24 and the sensing cell 30. In an embodiment, the insulating layer 41 can be an organic material, and the insulating layers 43 and 44 can be inorganic materials, but are not limited in the scope of the disclosure.

[0031] The driving layer 34 can include one or more thin film transistors. For the sake of brevity, Figure 2COnly a single thin film transistor (TFT) is illustrated, but the number of thin film transistors is not limiting to the scope of the present disclosure. The thin film transistor (TFT) can include a gate 120, a source / drain (S / D) region electrode 122, a source / drain electrode 124, and a semiconductor layer 126. The driving layer 34 can also optionally include insulating layers 45-48, where the insulating layer 48 can act as a buffer layer.

[0032] In other embodiments of the present disclosure, the sensing unit 30 can also include a Charge Coupled Device (CCD) sensing element, a Complementary Metal-Oxide-Semiconductor Image Sensor (CIS), or other suitable element or combination of the above. However, the image sensor used by the sensing element in each sensing combination is not limiting to the scope of the present disclosure.

[0033] In the present disclosure, the lens 22 can be made of fused silica, silicon dioxide, silicon nitride, glass, or polymethyl methacrylate (PMMA), or other suitable material or combination of the above. However, the material and refractive index of the lens 22 are not limiting to the scope of the present disclosure.

[0034] In the sensing unit 30 of the present disclosure, the substrate 11 and the substrate 38 can be used as support. The substrate 11 and the substrate 38 can include a single layer material structure or a multi-layer material structure. The substrate 11 and the substrate 38 can be made of polyimide (PI), polyethylene terephthalate (PET), polycarbonate (PC), polyethersulfone (PES), polybutylene terephthalate (PBT), polyethylene naphthalate (PEN), polyarylate (PAR), or other suitable material or combination of the above, but are not limited thereto.

[0035] In the driving layer 34 of the present disclosure, the material of the semiconductor layer 126 can include, but is not limited to, amorphous silicon, polycrystalline silicon, germanium, compound semiconductors (such as gallium nitride, silicon carbide, gallium arsenide, gallium phosphide, indium phosphide, indium arsenide, and / or indium antimonide), alloy semiconductors (such as SiGe alloy, GaAsP alloy, AlInAs alloy, AlGaAs alloy, GaInAs alloy, GaInP alloy, GaInAsP alloy), or a combination of the foregoing. The material of the semiconductor layer 126 can also include, but is not limited to, metal oxides, such as indium gallium zinc oxide (IGZO), indium zinc oxide (IZO), indium gallium zinc oxide (IGZTO), or organic semiconductors containing polycyclic aromatic compounds, or a combination of the foregoing. In some embodiments, the semiconductor layer 126 can be doped with p-type or n-type dopants.

[0036] In the driving layer 34 of the present disclosure, the material of the insulating layers 45-48 can include, but is not limited to, inorganic materials such as silicon nitride, silicon oxide, silicon oxynitride, aluminum oxide (Al2O3), hafnium oxide (HfO2), etc. The material of the insulating layers 45-48 can also include, but is not limited to, acrylic resin or other suitable organic materials. The insulating layers 45-48 can be a single layer structure or a multi-layer structure, but do not limit the scope of the present disclosure.

[0037] In the sensing unit 30 of the present disclosure, the material of the upper electrode 32U and the lower electrode 32L can include, but is not limited to, the material of the opaque conductive layer, such as a single layer or a multi-layer composite structure composed of metal, metal oxide or other suitable conductive materials. For example, it can include at least one of aluminum, copper, silver, chromium, titanium, molybdenum, a composite layer of the above-mentioned materials, or an alloy of the above-mentioned materials. In another embodiment, the material of the upper electrode 32U and the lower electrode 32L can include, but is not limited to, the material of the transparent conductive layer, such as a transparent oxide electrode (TCO), an ITO (Indium tin oxide) electrode, or an IZO (Indium Doped Zinc Oxide) electrode. In another embodiment, the material of the upper electrode 32U and the lower electrode 32L can include, but is not limited to, a semi-transparent metal thin film electrode, such as a magnesium-silver alloy thin film electrode, a gold thin film electrode, a platinum thin film electrode, or an aluminum thin film electrode, etc.

[0038] The material of the conductive layer 33 can include a transparent material to allow light to pass through for the sensing unit 30 to receive, collect and / or sense. When the material of the upper electrode 32U and the lower electrode 32L includes a transparent material, the light transmittance of the transparent material needs to be able to allow light to pass through for the sensing unit 30 to receive. When the material of the upper electrode 32U and the lower electrode 32L includes metal or a material that can reflect light, the non-overlapping with the hole 28 can be selectively arranged to reduce the chance of blocking light.

[0039] Figure 3A and Figure 3B The present disclosure shows the schematic diagram of the display device 100 in different lens designs and resolution when processing the fingerprint signal. In the embodiment shown in FIG. 1, the width L of the lens 22 is 100 μm, and the resolution of the sensing unit 30 is 127 pixels per inch (PPI). The optical fingerprint signal includes three intervals of strong, medium and weak, and the display device 100 of the present disclosure can identify the corresponding interval changes in the optical fingerprint signal under the design of the width L of the lens 22 being less than 100 μm. Figure 3A and Figure 3B In the embodiment shown in FIG. 1, the width L of the lens 22 is 100 μm, and the resolution of the sensing unit 30 is 127 pixels per inch (PPI). The optical fingerprint signal includes three intervals of strong, medium and weak, and the display device 100 of the present disclosure can identify the corresponding interval changes in the optical fingerprint signal under the design of the width L of the lens 22 being less than 100 μm.

[0040] The display device is not limited to any particular embodiment and may have different variations. For the sake of simplicity, the different variations described below will use the same... Figures 2A-2C The same reference numerals are used to label the same elements in the embodiments. To facilitate comparison between the first embodiment and different variations, the differences between the different variations will be highlighted below, and repeated parts will not be described again.

[0041] Figure 4A This is a top view of the sensing device 20 in the display device 100 according to another embodiment of the present disclosure. Figure 4B This disclosure presents a side view of the sensing device 20 in the display device 100 along the tangent A-A', according to another embodiment. Figure 4C This disclosure presents a side view of the sensing device 20 in the display device 100 along the tangent A-A', according to another embodiment.

[0042] like Figure 4A As shown, the sensing device 20 includes a plurality of sensing assemblies SM, wherein at least one sensing assembly SM includes at least two lenses 22 and a sensing unit 30. The at least one sensing device 20 may also include a light-shielding layer 24 located between the lenses 22 and the sensing unit 30. Different sensing assemblies SM and / or light-shielding layers 24 may be formed in the same continuous layer and / or the same process, but are not limited thereto. Along the Z-axis in the top view direction, the light-shielding layer 24 has a plurality of holes 28 that allow reflected light LT to be focused.

[0043] For the purpose of explanation, Figure 4A An embodiment of four adjacent sensing combinations SM in sensing device 20 is illustrated, wherein each sensing combination SM includes a sensing unit and four lenses, and the spacing between two adjacent lenses 22 is m. The aforementioned two adjacent lenses 22 refer to two lenses that have no other identical elements between them. In this embodiment, the spacing between two adjacent lenses 22 may be equal to or different from the spacing between other adjacent lenses 22.

[0044] like Figure 4B and Figure 4C As shown, m is defined as the distance between two adjacent lenses 22 in the XY plane, and n is defined as the interval between the two projection ranges of the light ray LT passing through the aperture 28 in the sensing unit 30. m, n, and d1 can be obtained in the same cross-section, wherein the cross-section is taken as previously described in the specification, with the center point C as the reference. Weff is defined as the maximum width of the sensing projection range of the light ray LT in the sensing unit 30 in the XY plane after passing through the aperture 28, where the value of Weff is shown in the following formula (1). Figure 4A and Figure 4BIn the embodiment shown, the spacing m between the lenses is not zero, and the value of m can be adjusted to correspond to different PPI display areas.

[0045] Weff = d1 x L / d2 (1)

[0046] In Figure 4B In the embodiment shown, the values of d1 and d2 are designed such that the light rays LT do not overlap in each projection range of the sensing unit 30 after passing through the hole 28, and the sensing device 20 is designed according to the following equations (2) - (5).

[0047] 0 < n < L + m (2)

[0048] L / 2 + L / 2 + m = Weff / 2 + Weff / 2 + n (3)

[0049] L + m - Weff = n (4)

[0050] After further derivation according to the following equations (6) - (7), it can be known that in order to achieve no overlapping projection range, the sensing device 20 needs to satisfy the condition shown in the following equation (8).

[0051] L + m - d1 x L / d2 > 0 (6)

[0052] L + m > d1 x L / d2 (7)

[0053] 0 < d1 / d2 < (L + m) / L (8)

[0054] In Figure 4C In the embodiment shown, the values of d1 and d2 can be designed such that the light rays LT have an overlapping area OV in two adjacent ranges of the sensing unit 30 after passing through the hole 28, wherein the maximum width of the overlapping area OV in the X-Y plane cannot be greater than Weff / 2, that is, the conditions shown in the following equations (9) and (10) need to be satisfied, and after derivation it can be known that when there is an overlapping range, the sensing device 20 needs to satisfy the condition shown in the following equation (11).

[0055] 0 < OV < L + m (9)

[0056] OV = Weff - (L + m) (10)

[0057] (L + m) / L < d1 / d2 < 2 x (L + m) / L (11)

[0058] According to the conditions shown in the above equations (8) and (11), when the spacing m between the lenses 22 in the sensing device 20 is not zero, the sensing device 20 can adopt the following larger range of conditions shown in the following equation (12).

[0059] 0 < d1 / d2 < 2 x (L + m) / L (12)

[0060] Figure 5 Figure 17 shows a detailed structure of the sensing device 20 along the tangent line A-A' in another embodiment of the display device 100. Compared with the structure shown in Figure 16, the sensing device 20 in this embodiment has a different structure of the conductive layer 33. Figure 2C As shown in the structure, Figure 5 The conductive layer 33 of the sensing device 20 in this embodiment can have a high-low relief upper surface (e.g. wavy, but not limited thereto), thereby improving the optical efficiency. In this embodiment, the lower surface 22L of the lens 22 can be a virtual surface parallel to the XY plane (e.g. the substrate surface) through the turning point 57 between two adjacent lenses 22 when the adjacent lenses 22 are connected.

[0061] It is worth noting that the features of the above embodiments can be arbitrarily mixed and used as long as they do not conflict with the spirit of the invention.

[0062] In summary, in the display device of the present disclosure, each sensing combination adopts the architecture of one sensing unit corresponding to multiple lenses to improve the accuracy of fingerprint recognition. In addition, by adjusting the distance between the lenses, adjusting the distance between the light shielding layer and the lens, or adjusting the distance between the light shielding layer and the sensing unit, the display device of the present disclosure can correspond to different PPI display areas, so that the user can use the fingerprint recognition function more flexibly and conveniently.

[0063] The above only describes the embodiments of the present disclosure and is not intended to limit the present disclosure. Those skilled in the art can make various modifications and changes to the present disclosure. Any modification, equivalent replacement, improvement, etc. made within the spirit and principles of the present disclosure shall be included in the protection scope of the present disclosure.

Claims

1. A sensing device, characterized by Comprising: a plurality of sensing combinations, at least one of the plurality of sensing combinations comprising at least two lenses and a sensing unit; wherein at least one of the plurality of sensing combinations is capable of allowing detected light to pass through the at least two lenses and be collected by the sensing unit, and the sensing unit comprises: an upper electrode; a lower electrode; a low-doped intrinsic layer disposed between the upper electrode and the lower electrode; a first semiconductor layer disposed between the upper electrode and the low-doped intrinsic layer; a second semiconductor layer disposed between the lower electrode and the low-doped intrinsic layer; and a conductive layer disposed between the first semiconductor layer and the upper electrode and contacting the first semiconductor layer and the upper electrode, wherein in a cross-section, a width of the conductive layer is greater than a width of the upper electrode, and a width of the lower electrode is greater than a width of the upper electrode; and at least one thin film transistor comprising: a third semiconductor layer; a gate disposed on the third semiconductor layer; a source region electrode disposed on the third semiconductor layer; and a drain region electrode disposed on the third semiconductor layer, wherein one of the source region electrode and the drain region electrode is coupled to the lower electrode.

2. The sensing device of claim 1, wherein, further comprising at least two holes disposed between the at least two lenses and the sensing unit.

3. The sensing device of claim 2, wherein, wherein the at least two lenses respectively correspond to the at least two holes.

4. The sensing device of claim 3, wherein: the at least two lenses comprise a first lens and a second lens, respectively corresponding to a first hole and a second hole of the at least two holes; a distance between the sensing unit and the first hole is d1; a distance between the second lens and the second hole is d2; widths of the first lens and the second lens are L, respectively; a distance between the first lens and the second lens is m; and the first lens, the second lens, the first hole, and the second hole satisfy the following relationship: 0 < d1 / d2 < 2 × (L + m) / L.

5. The sensing device of claim 4, wherein, L has a value less than or equal to 100 μm.

6. The sensing device of claim 4, wherein: the first lens, the second lens, the first hole, and the second hole further satisfy the following relationship: 0 < d1 / d2 ≦ (L + m) / L.

7. The sensing device of claim 6, wherein, L has a value less than or equal to 100 μm.

8. The sensing device of claim 1, wherein, the sensing device is a fingerprint sensing device.

9. A display device, characterized by comprising: comprising: a display panel; and the sensing device of claim 1 disposed under the display panel.

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