Packaging structure of bidirectional switch, semiconductor device and power converter

Abstract

The application provides a packaging structure of a bidirectional switch, which comprises a metal base plate, a first semiconductor switch, a second semiconductor switch and a plurality of inner pins, wherein the plurality of inner pins comprise a first inner pin, a second inner pin, a third inner pin, a fourth inner pin and a fifth inner pin; in specific implementation, the first semiconductor switch and the second semiconductor switch are arranged on the metal base plate, and the first end of the first semiconductor switch and the first end of the second semiconductor switch are coupled to the metal base plate; the second end of the first semiconductor switch is coupled to the first inner pin; the third end of the first semiconductor switch is coupled to the second inner pin; the second end of the second semiconductor switch is coupled to the third inner pin; the third end of the second semiconductor switch is coupled to the fourth inner pin; the metal base plate is coupled to the fifth inner pin, and each inner pin is coupled to the same lead frame. By implementing the application, the stray inductance of the current loop of the bidirectional switch can be reduced.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and in particular to a bidirectional switch packaging structure, semiconductor device, and power converter. Background Technology

[0002] For the detailed circuit diagram of the bidirectional switch, please refer to [link / reference]. Figure 1 ,like Figure 1 As shown, the bidirectional switch includes a semiconductor switch Q. 11 and semiconductor switch Q 12 For example, in the semiconductor switch Q 11 Turn-off, and semiconductor switch Q 12 When the circuit is turned on, current can flow from the semiconductor switch Q. 11 The parasitic diode flows through the semiconductor switch Q 12 The current flow direction can be understood as the first direction (i.e., left in, right out); in the semiconductor switch Q 11 Conduction, and semiconductor switch Q 12 When turned off, current can flow from the semiconductor switch Q. 12 The parasitic diode flows through the semiconductor switch Q 11 The direction of current flow can be understood as a second direction (i.e., right in, left out). In other words, a bidirectional switch is a switch that allows current to flow in both directions.

[0003] In the prior art, bidirectional switches are specifically implemented as two discrete semiconductor devices. A schematic diagram of the package structure of such a bidirectional switch can be found in [reference needed]. Figure 2 .like Figure 2 As shown, regardless of whether the current flows in the first or second direction, the current must pass through pin S. 11 111. Metal wire (wire bonding) 2. Pin D 11 13. Printed Circuit Board (PCB) traces, pin D 12 , metal wire 121 and pin S 12 It can be seen that in the existing bidirectional switch packaging structure, the stray inductance of the current loop includes the inductance from the four pins, two sections of thin metal wires, and one section of PCB trace, resulting in a relatively large stray inductance. Summary of the Invention

[0004] This application provides a bidirectional switch packaging structure, semiconductor device, and power converter that can reduce stray inductance in the current loop of the bidirectional switch.

[0005] In a first aspect, embodiments of this application provide a packaging structure for a bidirectional switch, the packaging structure including a metal base plate, a first semiconductor switch, a second semiconductor switch, and a plurality of internal pins, wherein the plurality of internal pins include a first internal pin, a second internal pin, a third internal pin, a fourth internal pin, and a fifth internal pin.

[0006] In a specific implementation, a first semiconductor switch and a second semiconductor switch are disposed on a metal base plate. The first ends of both the first and second semiconductor switches are coupled to the metal base plate. The second end of the first semiconductor switch is coupled to a first inner pin. The third end of the first semiconductor switch is coupled to a second inner pin. The second end of the second semiconductor switch is coupled to a third inner pin. The third end of the second semiconductor switch is coupled to a fourth inner pin. The metal base plate is coupled to a fifth inner pin. In this embodiment, the stray inductance of the current loop of the bidirectional switch includes the second inner pin, a second outer pin coupled to the second inner pin, a fourth inner pin, a fourth outer pin coupled to the fourth inner pin, and the inductance provided by two thin metal wires. The second inner pin and the second outer pin are integrally formed, and the fourth inner pin and the fourth outer pin are integrally formed. That is, the stray inductance of the current loop of the bidirectional switch in this embodiment includes two pins (each pin includes an inner pin and an outer pin) and two thin metal wires. Compared to existing technologies, the stray inductance of this current loop is reduced by two pins (each pin includes an inner pin and an outer pin) and the inductance of one PCB trace. In other words, the packaging structure of the bidirectional switch provided in this application embodiment can reduce the stray inductance of the current loop of the bidirectional switch.

[0007] Furthermore, in this embodiment, each of the multiple internal pins is coupled to the same lead frame. That is, this embodiment employs a lead frame packaging process, where the metal base plate and all internal pins belong to the same lead frame, which is convenient to process and has high production efficiency. Moreover, the lead frame packaging process has low cost, thus reducing production costs while improving production efficiency.

[0008] In conjunction with the first aspect, in a first possible implementation, the above-described package structure further includes a first diode and a second diode. The first and second diodes are disposed on a metal substrate, with the cathodes of both diodes coupled to the substrate; the anode of the first diode is coupled to a second inner pin, and the anode of the second diode is coupled to a fourth inner pin. In this embodiment, the package structure is specifically implemented as a package structure for an Insulated Gate Bipolar Transistor (IGBT) and its anti-parallel diode.

[0009] In a second possible implementation, in conjunction with the first aspect or the first possible implementation of the first aspect, the above-described packaging structure further includes an external pin corresponding to each internal pin; wherein any internal pin is coupled to the external pin corresponding to that internal pin. Specifically, a molding compound encapsulating a metal substrate and all the internal pins of the plurality of internal pins form a package shell, all of which are covered by the package shell, while the external pin corresponding to each internal pin is exposed outside the package shell.

[0010] In a third possible implementation, in conjunction with the first aspect or the first possible implementation of the first aspect, the above-mentioned packaging structure further includes a first external pin coupled to a first internal pin, a second external pin coupled to a second internal pin, a third external pin coupled to a third internal pin, and a fourth external pin coupled to a fourth internal pin. The molding compound encapsulates a metal base plate, forming a package shell with all the internal pins of the plurality of internal pins. The first, second, third, fourth, and fifth internal pins are all covered by this package shell; the first, second, third, and fourth external pins are exposed outside the package shell. Furthermore, the portion of the fifth internal pin extending beyond the package shell is cut off to form a cross-section of the fifth internal pin, which is exposed outside the package shell. In this embodiment, the portion of the fifth internal pin extending beyond the package shell (i.e., the fifth external pin) is cut off, so that the semiconductor device of the bidirectional switch provided in this embodiment does not require soldering the fifth pin on the PCB board. When routing PCB traces, safety avoidance between the fifth external pin and the second or fourth external pin is not considered, facilitating PCB routing.

[0011] In a fourth possible implementation, combining the first aspect or any of the possible implementations described above, the plurality of inner pins further includes a sixth inner pin and a seventh inner pin. The package structure also includes a sixth outer pin coupled to the sixth inner pin and a seventh outer pin coupled to the seventh inner pin. The third terminal of the first semiconductor switch is also coupled to the sixth inner pin; the third terminal of the second semiconductor switch is also coupled to the seventh inner pin. A molding compound encapsulating a metal substrate and all the inner pins of the plurality of inner pins form a package shell, with the sixth and seventh inner pins covered by the package shell, and the sixth and seventh outer pins exposed outside the package shell. This embodiment of the application, by adding pins to the package structure of a bidirectional switch, enables the bidirectional switch to achieve a Kelvin connection, decoupling the control circuit from the power circuit and improving the switching speed of the semiconductor switch.

[0012] In a fifth possible implementation, in conjunction with the first aspect or any of the above possible implementations of the first aspect, each of the plurality of inner pins is disposed along a first side of the metal base plate.

[0013] In a sixth possible implementation, in conjunction with the first aspect or any of the above possible implementations of the first aspect, the inner pins other than the fifth inner pin are arranged along the first side of the metal base plate, and the fifth inner pin is arranged along the second side of the metal base plate; wherein the first side and the second side are adjacent.

[0014] In a seventh possible implementation, in conjunction with the first aspect or any of the above possible implementations of the first aspect, the inner pins other than the fifth inner pin are arranged along the first side of the metal base plate, and the fifth inner pin is arranged along the third side of the metal base plate; wherein the first side and the third side are opposite to each other.

[0015] In the eighth possible implementation, in conjunction with the first aspect or any of the above possible implementations of the first aspect, the pin widths of the first inner pin and the third inner pin are smaller than the pin widths of the fifth inner pin, the second inner pin, and the fourth inner pin.

[0016] Secondly, embodiments of this application provide a bidirectional switch semiconductor device, the semiconductor device including a package housing and a chip having a package structure in conjunction with the first aspect or any of the possible implementations of the first aspect described above; wherein, some pins of the chip are exposed outside the package housing.

[0017] Thirdly, embodiments of this application provide a power converter including a controller and a semiconductor device incorporating the second aspect, wherein the controller can control the semiconductor device to turn on or off for power conversion.

[0018] It should be understood that the implementations and beneficial effects of the above-mentioned aspects of this application can be referenced from each other. Attached Figure Description

[0019] Figure 1 This is a circuit diagram of a two-way switch;

[0020] Figure 2 A schematic diagram of the packaging structure of a bidirectional switch provided by the prior art;

[0021] Figures 3A-4B A circuit diagram of a power converter provided in an embodiment of this application;

[0022] Figure 5 This is a schematic diagram of a package structure for a bidirectional switch provided in an embodiment of this application;

[0023] Figure 6 A schematic diagram of a lead frame structure corresponding to the package of the bidirectional switch provided in the embodiments of this application;

[0024] Figure 7A A schematic diagram of all the ribs of the lead frame provided in the embodiments of this application;

[0025] Figure 7B According to the embodiments of this application Figure 7A A schematic diagram of a bidirectional switch semiconductor device obtained after rib cutting;

[0026] Figure 8A A schematic diagram of another section of the lead frame provided in an embodiment of this application;

[0027] Figure 8B According to the embodiments of this application Figure 8A A schematic diagram of a bidirectional switch semiconductor device obtained after rib cutting;

[0028] Figure 9A A schematic diagram of another section of the lead frame provided in an embodiment of this application;

[0029] Figure 9B According to the embodiments of this application Figure 9A A schematic diagram of a bidirectional switch semiconductor device obtained after rib cutting;

[0030] Figure 10 A schematic diagram of another packaging structure for a bidirectional switch provided in an embodiment of this application;

[0031] Figure 11A A schematic diagram of another section of the lead frame provided in an embodiment of this application;

[0032] Figure 11B According to the embodiments of this application Figure 11A A schematic diagram of a bidirectional switch semiconductor device obtained after rib cutting;

[0033] Figure 12A A schematic diagram of another section of the lead frame provided in an embodiment of this application;

[0034] Figure 12B According to the embodiments of this application Figure 12A A schematic diagram of a bidirectional switch semiconductor device obtained after rib cutting;

[0035] Figure 13A A schematic diagram of another section of the lead frame provided in an embodiment of this application;

[0036] Figure 13B According to the embodiments of this application Figure 13A A schematic diagram of a bidirectional switch semiconductor device obtained after rib cutting;

[0037] Figure 14 A schematic diagram of another packaging structure for a bidirectional switch provided in an embodiment of this application;

[0038] Figure 15 A schematic diagram of another packaging structure for a bidirectional switch provided in an embodiment of this application;

[0039] Figure 16 This is another circuit diagram of a two-way switch;

[0040] Figure 17 A schematic diagram of another packaging structure for a bidirectional switch provided in an embodiment of this application;

[0041] Figure 18A A schematic diagram of another section of the lead frame provided in an embodiment of this application;

[0042] Figure 18B According to the embodiments of this application Figure 18A A schematic diagram of a bidirectional switch semiconductor device obtained after rib cutting;

[0043] Figure 19A A schematic diagram of another section of the lead frame provided in an embodiment of this application;

[0044] Figure 19B According to the embodiments of this application Figure 19A A schematic diagram of a bidirectional switch semiconductor device obtained after rib cutting;

[0045] Figure 20A A schematic diagram of another section of the lead frame provided in an embodiment of this application;

[0046] Figure 20B According to the embodiments of this application Figure 20A A schematic diagram of a bidirectional switch semiconductor device obtained after rib cutting;

[0047] Figure 21 A schematic diagram of another packaging structure for a bidirectional switch provided in an embodiment of this application;

[0048] Figure 22A A schematic diagram of another section of the lead frame provided in an embodiment of this application;

[0049] Figure 22B According to the embodiments of this application Figure 22A A schematic diagram of a bidirectional switch semiconductor device obtained after rib cutting;

[0050] Figure 23A A schematic diagram of another section of the lead frame provided in an embodiment of this application;

[0051] Figure 23B According to the embodiments of this application Figure 23A A schematic diagram of a bidirectional switch semiconductor device obtained after rib cutting;

[0052] Figure 24A A schematic diagram of another section of the lead frame provided in an embodiment of this application;

[0053] Figure 24B According to the embodiments of this application Figure 24A A schematic diagram of a bidirectional switch semiconductor device obtained after rib cutting;

[0054] Figure 25 This is another circuit diagram of a two-way switch;

[0055] Figure 26 A schematic diagram of another packaging structure for a bidirectional switch provided in an embodiment of this application;

[0056] Figure 27 This is a schematic diagram of another packaging structure of the bidirectional switch provided in the embodiments of this application. Detailed Implementation

[0057] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0058] The implementation of the technical solution of this application will be further described in detail below with reference to the accompanying drawings.

[0059] The bidirectional switching semiconductor device provided in this application embodiment can be applied to scenarios where current flows bidirectionally, such as in power converters like AC / DC converters (Alternating Current / Direct Current converters) and DC / AC converters (Direct Current / Direct Current converters).

[0060] In some feasible implementations, see Figure 3A , Figure 3A This is a circuit diagram of a power converter provided in an embodiment of this application. Figure 3A As shown, the power converter includes capacitor C. 31 Capacitor C 32 31. Semiconductor devices, 31. Semiconductor switches Q 33 Semiconductor switch Q 34 And the controller (not shown in the figure).

[0061] The semiconductor device 31 integrates a semiconductor switch Q. 31 and semiconductor switch Q 32 Among them, the semiconductor switch Q 31 The first terminal (i.e., the drain) is connected to the semiconductor switch Q. 32 The first end (i.e., the drain) is coupled. It can be understood that the two semiconductor switches in the semiconductor device 31 are specifically implemented as an integrated semiconductor device, unlike the two semiconductor switches in the prior art which are implemented as two separate semiconductor devices.

[0062] It should be noted that the "coupling" described in this application refers to a direct or indirect connection. For example, the coupling between a and b can be either a direct connection between a and b, or an indirect connection between a and b through one or more other electrical components. For instance, a can be directly connected to c, and c can be directly connected to b, thus enabling a and b to be connected through c.

[0063] The controller can control semiconductor device 31 and semiconductor switch Q. 33 and semiconductor switch Q 34 The controller can be switched on or off to perform power conversion. In specific implementations, the controller can be a microcontroller unit (MCU), a central processing unit (CPU), other general-purpose processors, digital signal processors (DSPs), application-specific integrated circuits (ASICs), field-programmable gate arrays (FPGAs), or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc.

[0064] It should be noted that the power converter provided in this application may have one or more controllers, that is, the semiconductor switches and semiconductor devices may share a controller, or they may be controlled by different controllers with communication connections. In other words, the embodiments of this application do not limit the number of controllers in the power converter.

[0065] at this time, Figure 3A The power converter shown can convert direct current (e.g., DC1+ and DC1-) into alternating current and output it at point A. The specific implementation principle of this power converter can be found in the implementation of the T-type three-level circuit in a DC / AC converter, and will not be elaborated here.

[0066] Unlike existing technologies, the power converter provided in this application uses a bidirectional switching semiconductor device. Specifically, the bidirectional switch of the power converter in this application is implemented as an integrated semiconductor device, which can reduce the area occupied by the power converter on the PCB board.

[0067] Furthermore, existing heat dissipation measures for power converters involve applying thermal grease or other auxiliary materials to the bottom of each semiconductor device, followed by placing a ceramic substrate on top of the grease-coated substrate. Since a bidirectional switch in the prior art has two discrete semiconductor devices, two semiconductor devices and two ceramic substrates are required. In this application, however, the bidirectional switch is specifically implemented as a single integrated semiconductor device, reducing the use of thermal grease and other auxiliary materials, as well as the ceramic substrate, thereby lowering the cost of the power converter.

[0068] Figure 3A The power converter shown uses a metal-oxide-semiconductor field-effect transistor (MOSFET) as an example of a semiconductor switch. It can be understood that the semiconductor switch can also be specifically implemented as an insulated-gate bipolar transistor (IGBT) and its anti-parallel diode. That is, in some feasible implementations, Figure 3A The semiconductor switch in the circuit can be replaced by an IGBT, thereby obtaining... Figure 3B The power converter shown in the figure.

[0069] like Figure 3B As shown, the power converter includes capacitor C. 33 Capacitor C 34 32. Semiconductor device, 32. Semiconductor switch Q 37 diode D 37 Semiconductor switch Q 38 diode D 38 And the controller (not shown in the figure).

[0070] Since IGBTs do not have parasitic diodes, when a semiconductor switch is specifically implemented as an IGBT, a diode is connected in parallel between the first terminal (collector) and the third terminal (emitter) of each IGBT. In other words, with... Figure 3A The semiconductor device 31 shown in the figure is different. Figure 3B The semiconductor device 32 shown in the figure integrates a semiconductor switch Q. 35 and semiconductor switch Q 36 In addition, it also integrates diode D. 35 and diode D36 Among them, the semiconductor switch Q 35 collector and diode D 35 Cathode, semiconductor switch Q 36 collector and diode D 36 Cathode coupling, diode D 35 Anode-coupled semiconductor switch Q 35 The emitter of the diode D 36 Anode-coupled semiconductor switch Q 36 The emitter.

[0071] At this point, the semiconductor device 32 is still specifically implemented as an integrated semiconductor device, unlike the two semiconductor switches in the prior art which are implemented as two separate semiconductor devices. Figure 3B The power converter shown can convert direct current (e.g., DC2+ and DC2-) into alternating current and output it at point B. The specific implementation principle of this power converter can also be found in the implementation of the T-type three-level circuit in a DC / AC converter, and will not be elaborated here.

[0072] In some feasible implementations, see Figure 4A , Figure 4A This is another circuit diagram of the power converter provided in an embodiment of this application. (See diagram below.) Figure 4A As shown, the power converter includes capacitor C. 41 41. Semiconductor devices, 41. Semiconductor switches Q 43 Semiconductor switch Q 44 Semiconductor switch Q 45 Semiconductor switch Q 46 And the controller (not shown in the figure).

[0073] The semiconductor device 41 integrates a semiconductor switch Q. 41 and semiconductor switch Q 42 Among them, the semiconductor switch Q 41 The first terminal (i.e., the drain) is connected to the semiconductor switch Q. 42 The first end (i.e., the drain) is coupled. It can be understood that the two semiconductor switches integrated in the semiconductor device 41 are specifically implemented as one integrated semiconductor device, unlike the two semiconductor switches in the prior art which are implemented as two separate semiconductor devices.

[0074] at this time, Figure 4AThe power converter shown can convert direct current (e.g., DC3+ and DC3-) into alternating current and output it between points C and D. The specific implementation principle of this power converter can be found in the implementation of the Heric (High Efficiency and Reliable Inverter Conception, HERIC) topology, and will not be elaborated here.

[0075] Optionally, three Figure 4A The power converters shown can be connected in parallel to form a three-phase inverter, which can be used in photovoltaic and electric vehicle applications.

[0076] Similarly, in some feasible implementations, Figure 4A The semiconductor switch in the circuit can be replaced by an IGBT, thereby obtaining... Figure 4B The power converter shown in the figure.

[0077] like Figure 4B As shown, the power converter includes capacitor C. 42 42. Semiconductor devices, 42. Semiconductor switches Q 49 diode D 49 Semiconductor switch Q 410 diode D 410 Semiconductor switch Q 411 diode D 411 Semiconductor switch Q 412 diode D 412 And the controller (not shown in the figure).

[0078] Since IGBTs do not have parasitic diodes, when a semiconductor switch is specifically implemented as an IGBT, a diode is connected in parallel between the first terminal (collector) and the third terminal (emitter) of each IGBT. In other words, with... Figure 4A The semiconductor device 41 shown in the figure is different, Figure 4B The semiconductor device 42 shown in the figure integrates a semiconductor switch Q. 47 and semiconductor switch Q 48 In addition, it also integrates diode D. 47 and diode D 48 Among them, the semiconductor switch Q 47 collector and diode D 47 Cathode, semiconductor switch Q 48 collector and diode D 48 Cathode coupling, diode D 47 Anode-coupled semiconductor switch Q 47 The emitter of the diode D 48 Anode-coupled semiconductor switch Q48 The emitter.

[0079] At this point, the semiconductor device 42 is still specifically implemented as an integrated semiconductor device, unlike the two semiconductor switches in the prior art which are implemented as two separate semiconductor devices. Figure 4B The power converter shown can convert direct current (e.g., DC4+ and DC4-) into alternating current and output it between points E and F. The specific implementation principle of this power converter can also be found in the implementation of the Heric (High Efficiency and Reliable Inverter Conception, HERIC) topology, which will not be elaborated here.

[0080] Similarly, three can also be... Figure 4B The power converters shown are connected in parallel to form a three-phase inverter, which can be used in scenarios such as photovoltaics and electric vehicles.

[0081] Combined with the preceding text Figures 3A to 4B This should be understood as an exemplary description of the specific application circuit of the bidirectional switching semiconductor device provided in this application, and should not be construed as limiting. The bidirectional switching semiconductor device provided in the embodiments of this application can still be used in other AC / DC converters and DC / DC converters.

[0082] The packaging structure of the bidirectional switch semiconductor device provided in the embodiments of this application will be described below with reference to the accompanying drawings.

[0083] See Figure 5 , Figure 5 This is a schematic diagram of a package structure for a bidirectional switch provided in an embodiment of this application. Figure 5 As shown, the package structure of the bidirectional switch includes a metal base plate 50 and a first semiconductor switch Q. 51 Second semiconductor switch Q 52 And multiple internal pins (e.g., first internal pin 531, second internal pin 532, third internal pin 533, fourth internal pin 534 and fifth internal pin 535).

[0084] The metal base plate 50 can be specifically made of copper alloys, such as copper-iron-phosphorus, copper-nickel-silicon, copper-chromium-zirconium, copper-silver, copper-tin, etc.

[0085] The semiconductor switch wafer is arranged on the metal substrate 50, i.e., the first semiconductor switch Q. 51 Second semiconductor switch Q 52 It is mounted on a metal base plate 50. Specifically, it is a first semiconductor switch Q. 51 The first terminal (i.e., the drain) and the second semiconductor switch Q52 The first terminal (i.e., the drain) is disposed on the metal base plate 50. Since the metal base plate is conductive, the first semiconductor switch Q... 51 The drain can be connected to the second semiconductor switch Q via the metal base plate 50. 52 Drain coupling.

[0086] It should be noted that the semiconductor switch in the package structure of this bidirectional switch is specifically implemented as a MOSFET, thus possessing... Figure 5 The semiconductor device with the packaged structure shown is the one mentioned above. Figure 3A Semiconductor device 31 and the preceding text Figure 4A Semiconductor device 41.

[0087] First semiconductor switch Q 51 The second end G 51 (i.e., the gate) is connected through a thin metal wire L 51 Coupled to the first internal pin 531; the first semiconductor switch Q 51 The third end S 51 (i.e., the source) passes through a thin metal wire L 52 Coupled to the second internal pin 532. Second semiconductor switch Q. 52 The second end G 52 (i.e., the gate) is connected through a thin metal wire L 54 Coupled to the third internal pin 533; the second semiconductor switch Q 52 The third end S 52 (i.e., the source) passes through a thin metal wire L 53 Coupled to the fourth internal pin 534. Furthermore, the metal base plate 50 couples to the fifth internal pin 535.

[0088] For example, the metal wires in the embodiments of this application can be specifically implemented as gold wire, silver wire, copper wire, or aluminum wire. It should be explained that the number of metal wires described in the embodiments of this application can be greater than 1. Taking metal wire L as an example... 52 For example, in this embodiment of the application, there may be multiple wires connected to the metal wire L. 52 Parallel metal wires (not shown in the figure) are used to switch the first semiconductor switch Q. 51 The source is coupled to the second internal pin 532, thereby allowing the metal wire L to be coupled. 52 The current is shunted to adapt to high-current applications.

[0089] The package structure of the bidirectional switch also includes an external pin corresponding to each internal pin, and each internal pin is coupled to the external pin corresponding to that internal pin. For example, the first internal pin 531 is coupled to the first external pin 541, the second internal pin 532 is coupled to the second external pin 542, the third internal pin 533 is coupled to the third external pin 543, the fourth internal pin 534 is coupled to the fourth external pin 544, and the fifth internal pin 535 is coupled to the fifth external pin 545.

[0090] Unlike existing technologies where bidirectional switches are implemented as two separate semiconductor devices, the bidirectional switch in this embodiment is implemented as a single integrated semiconductor device. In this case, the current flows through the second external pin 542, the second internal pin 532, and the thin metal wire L. 52 Fourth external pin 544, fourth internal pin 534, and metal wire L 53 The second external pin 542 and the second internal pin 532 are integrally formed into one pin, and the fourth external pin 544 and the fourth internal pin 534 are integrally formed into one pin.

[0091] In other words, the stray inductance of the current loop of the bidirectional switch in this embodiment includes two pins (each pin includes an inner pin and an outer pin) and two thin metal wires. Compared with the prior art, the stray inductance of this current loop is reduced by the inductance of two pins (each pin includes an inner pin and an outer pin) and one PCB trace. That is, the packaging structure of the bidirectional switch provided in this embodiment can reduce the stray inductance of the current loop of the bidirectional switch.

[0092] In some feasible embodiments, a metal base plate 50 encapsulated with molding material (e.g., epoxy resin encapsulation) forms a package housing 5 with all the inner pins of a plurality of inner pins. In this case, all inner pins (i.e., the first inner pin 531, the second inner pin 532, the third inner pin 533, the fourth inner pin 534, and the fifth inner pin 535) are covered by the package housing 5, while the outer pins corresponding to each inner pin (i.e., the first outer pin 541, the second outer pin 542, the third outer pin 543, the fourth outer pin 544, and the fifth outer pin 545) are exposed outside the package housing 5.

[0093] Therefore, in terms of specific product form, the bidirectional switch semiconductor device provided in this application embodiment has at least 5 external pins.

[0094] The lead frame of the semiconductor device equipped with this bidirectional switch can be found in [reference needed]. Figure 6 , Figure 6 This is a schematic diagram of a lead frame structure corresponding to the package of the bidirectional switch provided in the embodiments of this application.

[0095] like Figure 6As shown, the lead frame includes a frame body 61, connecting ribs 62, and multiple frame units 63. The frame body 61 connects the various frame units into a single unit. Each frame unit 63 includes a base island 631, an inner leg 632, and an outer leg 633. Optionally, the base island 631 can be considered as described above. Figure 5 The metal base plate 50 described above, or the base island 631, is obtained after being plated with gold or silver. Figure 5 The metal base plate 50 described.

[0096] During the lead frame packaging process, the wafers of the first semiconductor switch and the second semiconductor switch are soldered into the base island 631 of each frame unit 63 to realize the first semiconductor switch Q. 51 Second semiconductor switch Q 52 It is mounted on the metal base plate 50.

[0097] The wafer and the inner leg 632 are connected by thin metal wires (i.e., wire bonding). At this time, the inner leg 632 in the frame unit 63 is the bonding described above. Figure 5 The described internal pins, or internal legs 632, are obtained after being plated with gold or silver, as described above. Figure 5 The described internal pins. That is, after wire bonding in the lead frame, a pin with the following characteristics can be obtained. Figure 5 The package structure of the bidirectional switch is shown. Each internal pin in this package structure is coupled to the same lead frame. Specifically, each internal pin is coupled to a connecting rib 62 via its corresponding external leg 633, which is the connection rib 62 mentioned above. Figure 5 The described external pins, or external legs 633, are obtained after being plated with gold or silver, as described above. Figure 5 The described external pins. At this point, the metal base plate and all the internal pins form part of the same lead frame.

[0098] The leadframe encapsulation specifically involves encapsulating the metal base plate 50 and all the internal leads of the plurality of internal leads within the encapsulation area 6 with an encapsulation material (such as epoxy resin).

[0099] After the leadframe is encapsulated and the epoxy resin has cured, the connecting ribs between the outer leads are cut off. At this point, please refer to... Figure 7A , Figure 7A This is a schematic diagram of all the ribs of the lead frame provided in an embodiment of this application. Figure 7A As shown, along Figure 7A The dotted lines in the diagram represent cutting away the connecting ribs, which can yield multiple [likely referring to different types of ribs]. Figure 7B The semiconductor device shown is a bidirectional switch.

[0100] Understandable, Figure 7BThe diagram shows a bidirectional switch semiconductor device after it has been encapsulated in plastic, so the internal wafers and metal wires are not visible. For example, X-rays or other methods can be used to examine the internal structure of the semiconductor device. Figure 7B By examining the semiconductor devices shown, one can see the details. Figure 5 The image shows a wafer and metal wires.

[0101] In summary, the leadframe packaging process used in this application embodiment involves a metal base plate and all pins (each pin includes inner and outer pins) belonging to the same leadframe, which is convenient to process and has high production efficiency. Furthermore, the leadframe packaging process is low-cost, thus reducing production costs while improving production efficiency.

[0102] It should be noted that, Figure 7A and Figure 7B This should be understood as an illustrative description of the placement of each internal pin in the package structure of a bidirectional switch, and should not be construed as a limitation.

[0103] For example, the above Figure 7A and Figure 7B Each inner pin is arranged along the first side of the metal base plate, that is, all inner pins are located on the same side of the metal base plate; for example, the fifth inner pin 535 and the first inner pin 531, the second inner pin 532, the third inner pin 533 and the fourth inner pin 534 can be located on different sides of the metal base plate.

[0104] Optionally, in some feasible implementations, see [link to relevant documentation]. Figure 8A , Figure 8A This is a schematic diagram showing another cut of the lead frame provided in an embodiment of this application. (See attached diagram.) Figure 8A As shown, the packaging structure of this bidirectional switch (not shown in the figure) is similar to... Figure 5 The difference in the package structure shown is the different placement of the fifth inner pin 535. In this case, the other inner pins (i.e., the first inner pin 531, the second inner pin 532, the third inner pin 533, and the fourth inner pin 534) are positioned along the first side of the metal base plate, while the fifth inner pin 535 is positioned along the second side of the metal base plate. The first and second sides are adjacent to each other.

[0105] It needs to be explained that, Figure 8A The second side shown is to the left of the first side, but the second side can also be specifically the right side of the first side (not shown in the figure).

[0106] along Figure 8A The dotted lines in the diagram represent cutting away the connecting ribs, which can yield multiple [likely referring to different types of ribs]. Figure 8B The semiconductor device shown is a bidirectional switch.

[0107] Optionally, in some feasible implementations, see [link to relevant documentation]. Figure 9A , Figure 9A This is a schematic diagram showing another cut of the lead frame provided in an embodiment of this application. (See attached diagram.) Figure 9A As shown, the packaging structure of this bidirectional switch (not shown in the figure) is similar to... Figure 5 The difference in the package structure shown is the different placement of the fifth internal pin 535. In this case, the other internal pins (i.e., the first internal pin 531, the second internal pin 532, the third internal pin 533, and the fourth internal pin 534) are positioned along the first side of the metal base plate, while the fifth internal pin 535 is positioned along the third side of the metal base plate. The first and third sides are opposite each other.

[0108] along Figure 9A The dotted lines in the diagram represent cutting away the connecting ribs, which can yield multiple [likely referring to different types of ribs]. Figure 9B The semiconductor device shown is a bidirectional switch. Alternatively, in another possible implementation, the cutting method at the fifth external pin can be a cross-cut (not shown), which cuts off the connection between the external pin and the frame.

[0109] Furthermore, in some feasible embodiments, the control terminal and power terminal of the semiconductor switch in the bidirectional switch can be set separately. That is, the first inner pin 531 can be set on the second or third side of the metal base plate, the third inner pin 533 can also be set on the second or third side of the metal base plate, while the second inner pin 532 and the fourth inner pin 534 are set on the first side of the metal base plate (not shown in the figure).

[0110] In some feasible implementations, the pin widths of the first inner pin 531 and the third inner pin 533 are smaller than the pin widths of the fifth inner pin 535, the second inner pin 532, and the fourth inner pin 534. Since the pin width is positively correlated with the current it carries, the corresponding pin width can be set according to the current carried by each inner pin. Specifically, the first inner pin 531 is coupled to the first semiconductor switch Q. 51 The gate and the third internal pin 533 are coupled to the second semiconductor switch Q. 52 The gate is the control terminal, and the current flowing through it is relatively small, so the pin width can be small. The fifth internal pin of the 535 is coupled to the first semiconductor switch Q. 51 The drain and the second semiconductor switch Q 52 The drain of the first semiconductor switch Q is coupled to the second internal pin 532. 51 The source, the fourth internal pin 534, is coupled to the second semiconductor switch Q. 52 The source and drain are used to connect to the power circuit, and the current flowing through them is relatively large, so the pin width is relatively large.

[0111] Combined with the preceding text Figures 5 to 9B The described bidirectional switch semiconductor device has at least five external pins. Optionally, in some feasible embodiments, the bidirectional switch semiconductor device provided in this application may have at least four external pins and a cut-off surface of one pin. Specifically, during the lead-cutting process, the portion of the fifth internal pin extending beyond the package housing (i.e., the fifth external pin) is cut off.

[0112] See Figure 10 , Figure 10 This is a schematic diagram of another packaging structure for a bidirectional switch provided in an embodiment of this application. (See attached diagram.) Figure 10 As shown, the package structure of the bidirectional switch includes a metal base plate 100 and a first semiconductor switch Q. 101 Second semiconductor switch Q 102 And multiple internal pins (e.g., first internal pin 1031, second internal pin 1032, third internal pin 1033, fourth internal pin 1034 and fifth internal pin 1035).

[0113] The metal base plate 100 can be specifically made of copper alloys, such as copper-iron-phosphorus, copper-nickel-silicon, copper-chromium-zirconium, copper-silver, copper-tin, etc.

[0114] The semiconductor switch wafer is arranged on the metal substrate 100, i.e., the first semiconductor switch Q. 101 Second semiconductor switch Q 102 It is mounted on the metal base plate 100. Specifically, it is a first semiconductor switch Q. 101 The first terminal (i.e., the drain) and the second semiconductor switch Q 102 The first terminal (i.e., the drain) is disposed on the metal base plate 100. Since the metal base plate is conductive, the first semiconductor switch Q... 101 The drain can be connected to the second semiconductor switch Q via the metal base plate 100. 102 Drain coupling.

[0115] First semiconductor switch Q 101 The second end G 101 (i.e., the gate) is connected through a thin metal wire L 101 Coupled to the first internal pin 1031; the first semiconductor switch Q 101 The third end S 101 (i.e., the source) passes through a thin metal wire L 102 Coupled to the second internal pin 1032. Second semiconductor switch Q. 102 The second end G 102 (i.e., the gate) is connected through a thin metal wire L 104 Coupled to the third internal pin 1033; the second semiconductor switch Q 102The third end S 102 (i.e., the source) passes through a thin metal wire L 103 Coupled to the fourth internal pin 1034. Furthermore, the metal base plate 100 couples to the fifth internal pin 1035.

[0116] For example, the metal wire in the embodiments of this application can be specifically implemented as gold wire, silver wire, copper wire or aluminum wire.

[0117] The bidirectional switch's encapsulation structure also includes a first external pin 1041 coupled to a first internal pin 1031, a second external pin 1042 coupled to a second internal pin 1032, a third external pin 1043 coupled to a third internal pin 1033, and a fourth external pin 1044 coupled to a fourth internal pin 1034. A molding compound (e.g., epoxy resin molding) and a metal base plate 100 form an encapsulation shell 10 with all the internal pins. At this time, the first internal pin 1031, the second internal pin 1032, the third internal pin 1033, the fourth internal pin 1034, and the fifth internal pin 1035 are all covered by the encapsulation shell 10, while the first external pin 1041, the second external pin 1042, the third external pin 1043, and the fourth external pin 1044 are exposed outside the encapsulation shell 10. The cut surface formed by removing the portion of the fifth internal pin 1035 that extends beyond the encapsulation shell 10 is also exposed outside the encapsulation shell 10.

[0118] Therefore, in terms of specific product form, the bidirectional switch semiconductor device provided in this application embodiment includes at least 4 external pins and a pin cross-section.

[0119] Compared to Figure 5 The package structure of the bidirectional switch shown in the figure is as follows. Figure 10 The bidirectional switch shown in the diagram lacks a fifth external pin in its package structure. Figure 5 The fifth external pin has an additional cut surface that protrudes beyond the package housing. It's understandable that the coupling point between the two semiconductor switches in a bidirectional switch typically doesn't require other electronic components, so this coupling pin (i.e., the fifth external pin) can be removed during the lead-cutting process, achieving the same result as described above. Figure 5 The described beneficial effect is the reduction of stray inductance in the current loop of the bidirectional switch.

[0120] Furthermore, since the fifth external pin is removed, the semiconductor device using the bidirectional switch provided in this application embodiment does not need to have the fifth pin soldered on the PCB board. When routing the PCB, there is no need to consider the safety avoidance between the fifth external pin and the second external pin, or between the fifth external pin and the fourth external pin, which facilitates PCB routing.

[0121] The lead frame of the semiconductor device equipped with this bidirectional switch can still be found. Figure 6The difference lies in the rib cutting point. In this embodiment, each inner pin is still coupled to the connecting rib 62 through its corresponding outer pin, thus still achieving the goal of the metal base plate and all inner pins forming the same lead frame.

[0122] During the leadframe encapsulation process, the leadframe is molded and, after the epoxy resin has cured, the connecting ribs between the outer leads and the fifth outer lead are cut off. See [link / reference needed] at this point. Figure 11A , Figure 11A This is a schematic diagram showing another cut of the lead frame provided in an embodiment of this application. (See attached diagram.) Figure 11A As shown, along Figure 11A The dotted line in the diagram represents the cutting off of the connecting ribs, and... Figure 7A The diagram of the cutting reinforcement is different from that in the previous one. Figure 11A A cross-cut is added at the fifth outer pin to cut off the portion of the fifth inner pin that extends beyond the package housing (i.e., the fifth outer pin), thereby obtaining multiple... Figure 11B The semiconductor device shown is a bidirectional switch.

[0123] It is understandable that methods such as X-rays are used to... Figure 11B By examining the semiconductor devices shown, one can see the details. Figure 10 The image shows a wafer and metal wires.

[0124] It can be seen that in the embodiment of this application, the lead frame packaging process is used. The metal base plate and all the pins (each pin includes inner pins and outer pins) still belong to the same lead frame. The only difference is that the fifth outer pin is removed during the lead cutting process.

[0125] Similarly, Figure 11A and Figure 11B This should be understood as an illustrative description of the placement of each internal pin in the package structure of a bidirectional switch, and should not be construed as a limitation.

[0126] For example, the above Figure 11A and Figure 11B Each inner pin is arranged along the first side of the metal base plate, that is, all inner pins are located on the same side of the metal base plate; for example, the fifth inner pin 1035 and the first inner pin 1031, the second inner pin 1032, the third inner pin 1033 and the fourth inner pin 1034 can be located on different sides of the metal base plate.

[0127] Optionally, in some feasible implementations, see [link to relevant documentation]. Figure 12A , Figure 12A This is a schematic diagram showing another cut of the lead frame provided in an embodiment of this application. (See attached diagram.) Figure 12A As shown, the packaging structure of this bidirectional switch (not shown in the figure) is similar to... Figure 10The difference in the package structure shown lies in the different placement of the fifth inner pin 1035. In this case, the other inner pins (i.e., the first inner pin 1031, the second inner pin 1032, the third inner pin 1033, and the fourth inner pin 1034) are positioned along the first side of the metal base plate, while the fifth inner pin 1035 is positioned along the second side of the metal base plate. The first and second sides are adjacent to each other.

[0128] It needs to be explained that, Figure 12A The second side shown is to the left of the first side, but the second side can also be specifically the right side of the first side (not shown in the figure).

[0129] along Figure 12A The dotted line in the diagram represents the cutting off of the connecting ribs, and... Figure 8A The difference is that the diagram of the cutting reinforcement shown in the figure is that... Figure 12A A vertical cut is added at the fifth outer pin to cut off the portion of the fifth inner pin 1035 that extends beyond the package housing (i.e., the fifth outer pin), thereby obtaining multiple... Figure 12B The semiconductor device shown is a bidirectional switch.

[0130] Optionally, in some feasible implementations, see [link to relevant documentation]. Figure 13A , Figure 13A This is a schematic diagram showing another cut of the lead frame provided in an embodiment of this application. (See attached diagram.) Figure 13A As shown, the packaging structure of this bidirectional switch (not shown in the figure) is similar to... Figure 10 The difference in the package structure shown lies in the different placement of the fifth internal pin 1035. In this case, the other internal pins (i.e., the first internal pin 1031, the second internal pin 1032, the third internal pin 1033, and the fourth internal pin 1034) are positioned along the first side of the metal base plate, while the fifth internal pin 1035 is positioned along the third side of the metal base plate. The first and third sides are opposite each other.

[0131] along Figure 13A The dotted line in the diagram represents the cutting off of the connecting ribs, and... Figure 9A The difference is that the diagram of the cutting reinforcement shown in the figure is that... Figure 13A A cross-cut is added at the fifth outer pin to cut off the portion of the fifth inner pin 1035 that extends beyond the package housing (i.e., the fifth outer pin), thereby obtaining multiple... Figure 13B The semiconductor device shown is a bidirectional switch.

[0132] Combined with the preceding text Figures 5 to 13B The description focuses on an embodiment where the semiconductor switch is specifically implemented as a MOSFET. The following section introduces an embodiment where the semiconductor switch is specifically implemented as an IGBT.

[0133] In some feasible implementations, see Figure 14 , Figure 14 This is a schematic diagram of another packaging structure for a bidirectional switch provided in an embodiment of this application. (See attached diagram.) Figure 14 As shown, the package structure of the bidirectional switch includes a metal base plate 140 and a first semiconductor switch Q. 141 First diode D 141 Second semiconductor switch Q 142 Second diode D 142 And multiple internal pins (e.g., first internal pin 1431, second internal pin 1432, third internal pin 1433, fourth internal pin 1434 and fifth internal pin 1435).

[0134] The metal base plate 140 can be specifically made of copper alloys, such as copper-iron-phosphorus, copper-nickel-silicon, copper-chromium-zirconium, copper-silver, copper-tin, etc.

[0135] Compared to the previous text Figure 5 The illustrated bidirectional switch packaging structure has an additional diode chip in the bidirectional switch packaging structure provided in this application embodiment.

[0136] At this time, both the diode wafer and the semiconductor switch wafer are arranged on the metal substrate 140, i.e., the first semiconductor switch Q. 141 First diode D 141 Second semiconductor switch Q 142 and the second diode D 142 All are mounted on the metal base plate 140. Specifically, it is the first semiconductor switch Q. 141 The first terminal (i.e., the collector) and the second semiconductor switch Q 142 The first end (i.e., the collector) is disposed on the metal base plate 140, and the first diode D 141 The cathode and the second diode D 142 The cathode is disposed on a metal base plate 140. Because the metal base plate is conductive, the first semiconductor switch Q... 141 collector, second semiconductor switch Q 142 collector, first diode D 141 The cathode and the second diode D 142 The cathode can be coupled through a metal base plate 140.

[0137] It should be noted that the semiconductor switch in the package structure of this bidirectional switch is specifically implemented as an IGBT, thus possessing... Figure 14 The semiconductor device with the packaged structure shown is the one mentioned above. Figure 3B Semiconductor device 32 and the preceding text Figure 4B Semiconductor devices 42 in the middle.

[0138] First semiconductor switch Q 141 The second end G 141 (i.e., the gate) passes through a thin metal wire L 141 Coupled to the first internal pin 1431; the first semiconductor switch Q 141 The third end S 141 (i.e., emitter) passes through a thin metal wire L 142 Coupled to the second internal pin 1432. Second semiconductor switch Q. 142 The second end G 142 (i.e., the gate) passes through a thin metal wire L 144 Coupled to the third internal pin 1433; the second semiconductor switch Q 142 The third end S 142 (i.e., emitter) passes through a thin metal wire L 143 Coupled to the fourth internal pin 1434. Furthermore, the metal base plate 140 couples to the fifth internal pin 1435. At this time, the first diode D... 141 anode A 141 Through the metal wire L 145 Coupled first semiconductor switch Q 141 The emitter, i.e., the first diode D 141 anode A 141 Coupled with the second internal pin 1432; second diode D 142 anode A 142 Through the metal wire L 146 Coupled second semiconductor switch Q 142 The emitter, i.e., the second diode D 142 anode A 142 Couple the fourth internal pin 1434.

[0139] For example, the metal wire in the embodiments of this application can be specifically implemented as gold wire, silver wire, copper wire or aluminum wire.

[0140] The package structure of the bidirectional switch also includes an external pin corresponding to each internal pin, and each internal pin is coupled to the external pin corresponding to that internal pin. For example, the first internal pin 1431 is coupled to the first external pin 1441, the second internal pin 1432 is coupled to the second external pin 1442, the third internal pin 1433 is coupled to the third external pin 1443, the fourth internal pin 1434 is coupled to the fourth external pin 1444, and the fifth internal pin 1435 is coupled to the fifth external pin 1445.

[0141] The bidirectional switch in this embodiment is also specifically implemented as an integrated semiconductor device. In this case, the current flows through the second external pin 1442, the second internal pin 1432, and the thin metal wire L. 142 Fourth external pin 1444, fourth internal pin 1434, and metal wire L 143The second external pin 1442 and the second internal pin 1432 are integrally formed into one pin, and the fourth external pin 1444 and the fourth internal pin 1434 are integrally formed into one pin.

[0142] In other words, the stray inductance of the current loop of the bidirectional switch in this embodiment also includes two pins (each pin includes an inner pin and an outer pin) and two segments of thin metal wire. This allows for the realization of... Figure 5 The beneficial effect of the illustrated bidirectional switch packaging structure is that, compared to the prior art, the stray inductance of the current loop is reduced by the inductance of two pins (each pin includes an inner pin and an outer pin) and one PCB trace. In other words, the bidirectional switch packaging structure provided in this application embodiment can also reduce the stray inductance of the current loop of the bidirectional switch.

[0143] In some feasible embodiments, a molding compound (e.g., epoxy resin molding) encapsulates a metal base plate 140 and forms a package housing 14 with all the inner pins of a plurality of inner pins. In this case, all the inner pins (i.e., the first inner pin 1431, the second inner pin 1432, the third inner pin 1433, the fourth inner pin 1434, and the fifth inner pin 1435) are covered by the package housing 14, while the outer pins corresponding to each inner pin (i.e., the first outer pin 1441, the second outer pin 1442, the third outer pin 1443, the fourth outer pin 1444, and the fifth outer pin 1445) are exposed outside the package housing 14.

[0144] It is understood that, in specific product forms, semiconductor devices with bidirectional switches having the packaging structure of embodiments of this application and those having Figure 5 The semiconductor devices of the bidirectional switches with the same package structure are all at least 5 external pins.

[0145] The lead frame for the semiconductor device equipped with this bidirectional switch can still be referenced in the previous text. Figure 6 The description of that is omitted here.

[0146] During the leadframe encapsulation process, the leadframe is molded and, after the epoxy resin has cured, the connecting ribs between the outer leads are cut off. At this point, it is still possible to refer to... Figure 7A , Figure 7A This is a schematic diagram of all the ribs of the lead frame provided in an embodiment of this application. Figure 7A As shown, along Figure 7A The dotted lines in the diagram represent cutting away the connecting ribs, which can yield multiple [likely referring to different types of ribs]. Figure 7B The semiconductor device shown is a bidirectional switch.

[0147] It is understood that in this application embodiment, the semiconductor switch is specifically implemented as an IGBT. Since the schematic diagram is after plastic encapsulation, the semiconductor devices obtained by implementing the semiconductor switch as an IGBT and as a MOSFET appear the same to the naked eye. The semiconductor devices are mainly examined using methods such as X-rays. Figure 5 The package structure shown indicates that the semiconductor device is a MOSFET; if you specifically see... Figure 14 The semiconductor device shown in the diagram is an IGBT.

[0148] Similarly, in some feasible implementations, the lead frame cutting method provided in this application embodiment can also be referred to the foregoing description. Figures 8A to 9B The described embodiments are not repeated here.

[0149] Furthermore, in some feasible implementations, the control terminal and power terminal of the semiconductor switch in the bidirectional switch can be set separately. That is, the first inner pin 1431 can be set on the second or third side of the metal base plate, the third inner pin 1433 can also be set on the second or third side of the metal base plate, while the second inner pin 1432 and the fourth inner pin 1434 are set on the first side of the metal base plate (not shown in the figure).

[0150] In some feasible implementations, the pin widths of the first inner pin 1431 and the third inner pin 1433 are smaller than the pin widths of the fifth inner pin 1435, the second inner pin 1432, and the fourth inner pin 1434. Since the pin width is positively correlated with the current it carries, the corresponding pin width can be set according to the current carried by each inner pin. Specifically, the first inner pin 1431 is coupled to the first semiconductor switch Q. 141 The gate and the third internal pin 1433 are coupled to the second semiconductor switch Q. 142 The gate is the control terminal, and the current flowing through it is relatively small, so the pin width can be small. The fifth internal pin, 1435, is coupled to the first semiconductor switch Q. 141 The drain and the second semiconductor switch Q 142 The drain of the first semiconductor switch Q is coupled to the second internal pin 1432. 141 The source, the fourth internal pin 1434, is coupled to the second semiconductor switch Q. 142 The source and drain are used to connect to the power circuit, and the current flowing through them is relatively large, so the pin width is relatively large.

[0151] Optionally, in some feasible implementations, the portion of the fifth inner pin that extends beyond the package housing (i.e., the fifth outer pin) can be cut off.

[0152] See Figure 15 , Figure 15 This is a schematic diagram of another packaging structure for a bidirectional switch provided in an embodiment of this application. (See attached diagram.) Figure 15 As shown, the package structure of this bidirectional switch includes a metal base plate 150 and a first semiconductor switch Q. 151 First diode D 151 Second semiconductor switch Q 152 Second diode D 152 And multiple internal pins (e.g., first internal pin 1531, second internal pin 1532, third internal pin 1533, fourth internal pin 1534 and fifth internal pin 1535).

[0153] The metal base plate 150 can be specifically made of copper alloys, such as copper-iron-phosphorus, copper-nickel-silicon, copper-chromium-zirconium, copper-silver, copper-tin, etc.

[0154] Compared to the previous text Figure 10 The illustrated bidirectional switch packaging structure has an additional diode chip in the bidirectional switch packaging structure provided in this application embodiment.

[0155] At this time, both the diode wafer and the semiconductor switch wafer are arranged on the metal substrate 150, i.e., the first semiconductor switch Q. 151 First diode D 151 Second semiconductor switch Q 152 and the second diode D 152 All are mounted on the metal base plate 150. Specifically, it is the first semiconductor switch Q. 151 The first terminal (i.e., the collector) and the second semiconductor switch Q 152 The first end (i.e., the collector) is disposed on the metal base plate 150, and the first diode D 151 The cathode and the second diode D 152 The cathode is disposed on a metal base plate 150. Because the metal base plate is conductive, the first semiconductor switch Q... 151 collector, second semiconductor switch Q 152 collector, first diode D 151 The cathode and the second diode D 152 The cathode can be coupled through a metal base plate 150.

[0156] First semiconductor switch Q 151 The second end G 151 (i.e., the gate) passes through a thin metal wire L 151 Coupled to the first internal pin 1531; the first semiconductor switch Q 151 The third end S 151 (i.e., emitter) passes through a thin metal wire L 152Coupled to the second internal pin 1532. Second semiconductor switch Q. 152 The second end G 152 (i.e., the gate) passes through a thin metal wire L 154 Coupled to the third internal pin 1533; the second semiconductor switch Q 152 The third end S 152 (i.e., emitter) passes through a thin metal wire L 153 Coupled to the fourth internal pin 1534. Furthermore, the metal base plate 150 couples to the fifth internal pin 1535. At this time, the first diode D... 151 anode A 151 Through the metal wire L 155 Coupled first semiconductor switch Q 151 The emitter, i.e., the first diode D 151 anode A 151 Coupled with the second internal pin 1532; second diode D 152 anode A 152 Through the metal wire L 156 Coupled second semiconductor switch Q 152 The emitter, i.e., the second diode D 152 anode A 152 Couple the fourth internal pin 1534.

[0157] For example, the metal wire in the embodiments of this application can be specifically implemented as gold wire, silver wire, copper wire or aluminum wire.

[0158] The package structure of the bidirectional switch also includes a first external pin 1541 coupled to a first internal pin 1531, a second external pin 1542 coupled to a second internal pin 1532, a third external pin 1543 coupled to a third internal pin 1533, and a fourth external pin 1544 coupled to a fourth internal pin 1534. A molding compound (e.g., epoxy resin molding) and a metal base plate 150 form a package housing 15 with all the internal pins. At this time, the first internal pin 1531, the second internal pin 1532, the third internal pin 1533, the fourth internal pin 1534, and the fifth internal pin 1535 are all covered by the package housing 15, while the first external pin 1541, the second external pin 1542, the third external pin 1543, and the fourth external pin 1544 are exposed outside the package housing 15. The cut surface formed by removing the portion of the fifth internal pin 1535 that extends beyond the package housing 15 is also exposed outside the package housing 15.

[0159] Therefore, in terms of specific product form, the bidirectional switch semiconductor device provided in this application embodiment includes at least four external pins and a cross-section of one pin, and... Figure 10 The semiconductor devices shown in the figure have the same product form as the bidirectional switches.

[0160] Compared to Figure 14 The package structure of the bidirectional switch shown in the figure is as follows. Figure 15 The bidirectional switch shown in the diagram lacks a fifth external pin in its package structure. Figure 5 The fifth external pin has an additional cross-section that protrudes beyond the package housing, achieving the same effect as described above. Figure 14 The described beneficial effects, and the ability to achieve such Figure 10 The beneficial effect of the bidirectional switch package structure shown is that there is no need to consider safety avoidance between the fifth external pin and the second external pin, or between the fifth external pin and the fourth external pin, when routing on the PCB, which facilitates PCB routing.

[0161] The lead frame for the semiconductor device equipped with this bidirectional switch can still be referenced in the previous text. Figure 6 The description of that is omitted here.

[0162] During the leadframe encapsulation process, the leadframe is molded and, after the epoxy resin has cured, the connecting ribs between the outer leads and the fifth outer lead are cut off. At this point, it is still possible to refer to... Figure 11A , Figure 11A This is a schematic diagram showing another cut of the lead frame provided in an embodiment of this application. (See attached diagram.) Figure 11A As shown, along Figure 11A The dashed lines in the diagram represent the cutting off of the connecting ribs and the portion of the fifth inner pin that extends beyond the package housing (i.e., the fifth outer pin), resulting in multiple [different types of pins]. Figure 11B The semiconductor device shown is a bidirectional switch.

[0163] Similarly, by examining semiconductor devices using methods such as X-rays, if specific details are observed... Figure 10 The package structure shown indicates that the semiconductor device is a MOSFET; if you specifically see... Figure 15 The semiconductor device shown in the diagram is an IGBT.

[0164] In some feasible implementations, the lead frame cutting method provided in this application embodiment can also refer to the foregoing description. Figures 12A to 13B The described embodiments are not repeated here.

[0165] Furthermore, in some feasible implementations, the control terminal and power terminal of the semiconductor switch in the bidirectional switch can be set separately. That is, the first inner pin 1531 can be set on the second or third side of the metal base plate, the third inner pin 1533 can also be set on the second or third side of the metal base plate, while the second inner pin 1532 and the fourth inner pin 1534 are set on the first side of the metal base plate (not shown in the figure).

[0166] In some feasible implementations, the pin widths of the first inner pin 1531 and the third inner pin 1533 are smaller than the pin widths of the fifth inner pin 1535, the second inner pin 1532, and the fourth inner pin 1534. Since the pin width is positively correlated with the current it carries, the corresponding pin width can be set according to the current carried by each inner pin. Specifically, the first inner pin 1531 is coupled to the first semiconductor switch Q. 151 The gate and the third internal pin 1533 are coupled to the second semiconductor switch Q. 152 The gate is the control terminal, and the current flowing through it is relatively small, so the pin width can be small. The fifth internal pin, 1535, is coupled to the first semiconductor switch Q. 151 The drain and the second semiconductor switch Q 152 The drain of the first semiconductor switch Q is coupled to the second internal pin 1532. 151 The source, the fourth internal pin 1534, is coupled to the second semiconductor switch Q. 152 The source and drain are used to connect to the power circuit, and the current flowing through them is relatively large, so the pin width is relatively large.

[0167] Optionally, in some feasible implementations, see [link to relevant documentation]. Figure 16 , Figure 16 This is another circuit diagram of a two-way switch. (Example:) Figure 16 As shown, the bidirectional switch includes a first semiconductor switch Q. 51 Second semiconductor switch Q 52 Among them, the first semiconductor switch Q 51 Including the first terminal (i.e., the drain) and the second terminal G 51 (i.e., gate) and the third terminal S 51 and K 51 (i.e., the source) can be understood as S 51 and K 51 The first semiconductor switch Q is at the same potential. 51 Adding a pin output to the source allows for the decoupling of the control loop from the power loop. For example, the control loop can output from G... 51 Input, from K 51 Output; while the power circuit from S 51 Output, from the drain. First semiconductor switch Q 51 The control circuit and power circuit are relatively independent, which can improve the Q of the first semiconductor switch. 51 The switching speed. Similarly, the second semiconductor switch Q... 52 Including the first terminal (i.e., the drain) and the second terminal G 52 (i.e., gate) and the third terminal S 52 and K 52 (i.e., the source) can be understood as S52 and K 52 The second semiconductor switch Q is at the same potential. 52 Adding a pin output to the source allows for the decoupling of the control loop from the power loop. For example, the control loop can output from G... 52 Input, from K 52 Output; while the power circuit from S 52 Output, from the drain. Second semiconductor switch Q. 52 The control circuit and power circuit are relatively independent, thereby improving the Q of the second semiconductor switch. 52 The switching speed.

[0168] At this point, the packaging structure of the bidirectional switch can be found in [reference needed]. Figure 17 , Figure 17 This is a schematic diagram of another packaging structure for a bidirectional switch provided in an embodiment of this application. (See attached diagram.) Figure 17 As shown, in Figure 5 Based on the packaging structure shown in the figure, Figure 17 The package structure of the bidirectional switch shown also includes a sixth inner pin 536, a seventh inner pin 537, a sixth outer pin 546 coupled to the sixth inner pin 536, and a seventh outer pin 547 coupled to the seventh inner pin 537.

[0169] Among them, the first semiconductor switch Q 51 The third end S 51 (i.e., the source) passes through a thin metal wire L 55 Coupled with the sixth internal pin 536, the second semiconductor switch Q 52 The third end S 52 (i.e., the source) passes through a thin metal wire L 56 Coupled to the seventh internal pin 537.

[0170] In this embodiment, by adding two pins (each pin including an inner pin and an outer pin) to the package structure of the bidirectional switch, the bidirectional switch can achieve Kelvin connection, decoupling the control circuit from the power circuit and improving the switching speed of the semiconductor switch.

[0171] In some feasible embodiments, a molding compound (e.g., epoxy resin molding) encapsulates a metal base plate and forms a package housing 17 with all the inner pins of a plurality of inner pins. In this case, all the inner pins (i.e., the first inner pin 531, the second inner pin 532, the third inner pin 533, the fourth inner pin 534, the fifth inner pin 535, the sixth inner pin 536, and the seventh inner pin 537) are covered by the package housing 17, while the outer pins corresponding to each inner pin (i.e., the first outer pin 541, the second outer pin 542, the third outer pin 543, the fourth outer pin 544, the fifth outer pin 545, the sixth outer pin 546, and the seventh outer pin 547) are exposed outside the package housing 17.

[0172] Therefore, in terms of specific product form, the bidirectional switch semiconductor device provided in this application embodiment has at least 7 external pins. That is, relatively having Figure 5 Semiconductor devices with packaging structures in the middle have Figure 17 The semiconductor device with the package structure in the middle has two additional external pins.

[0173] During the leadframe encapsulation process, the leadframe is molded and, after the epoxy resin has cured, the connecting ribs between the outer leads are cut off. See [link / reference needed] at this point. Figure 18A , Figure 18A This is a schematic diagram showing another cut of the lead frame provided in an embodiment of this application. (See attached diagram.) Figure 18A As shown, along Figure 18A The dotted lines in the diagram represent cutting away the connecting ribs, which can yield multiple [likely referring to different types of ribs]. Figure 18B The semiconductor device shown is a bidirectional switch.

[0174] In some feasible implementations, see Figure 19A , Figure 19A This is a schematic diagram showing another cut of the lead frame provided in an embodiment of this application. (See attached diagram.) Figure 19A As shown, the packaging structure of this bidirectional switch (not shown in the figure) is similar to... Figure 17 The difference in the package structure shown is the different placement of the fifth inner pin 535. In this case, the other inner pins (i.e., the first inner pin 531, the second inner pin 532, the third inner pin 533, and the fourth inner pin 534) are positioned along the first side of the metal base plate, while the fifth inner pin 535 is positioned along the second side of the metal base plate. The first and second sides are adjacent to each other.

[0175] It needs to be explained that, Figure 19A The second side shown is to the left of the first side, but the second side can also be specifically the right side of the first side (not shown in the figure).

[0176] along Figure 19A The dotted lines in the diagram represent cutting away the connecting ribs, which can yield multiple [likely referring to different types of ribs]. Figure 19B The semiconductor device shown is a bidirectional switch.

[0177] Optionally, in some feasible implementations, see [link to relevant documentation]. Figure 20A , Figure 20A This is a schematic diagram showing another cut of the lead frame provided in an embodiment of this application. (See attached diagram.) Figure 20A As shown, the packaging structure of this bidirectional switch (not shown in the figure) is similar to... Figure 17 The difference in the package structure shown is the different placement of the fifth internal pin 535. In this case, the other internal pins (i.e., the first internal pin 531, the second internal pin 532, the third internal pin 533, and the fourth internal pin 534) are positioned along the first side of the metal base plate, while the fifth internal pin 535 is positioned along the third side of the metal base plate. The first and third sides are opposite each other.

[0178] along Figure 20A The dotted lines in the diagram represent cutting away the connecting ribs, which can yield multiple [likely referring to different types of ribs]. Figure 20B The semiconductor device shown is a bidirectional switch. Alternatively, in another possible implementation, the cutting method at the fifth external pin can be a cross-cut (not shown), which cuts off the connection between the external pin and the frame.

[0179] Optionally, in some feasible implementations, the portion of the fifth inner pin extending beyond the package housing (i.e., the fifth outer pin) can be cut off. In this case, in a specific product form, the bidirectional switch semiconductor device provided in this application embodiment can be seen to have at least six outer pins and a cross-section of one pin.

[0180] See Figure 21 , Figure 21 This is a schematic diagram of another packaging structure for a bidirectional switch provided in an embodiment of this application. (See attached diagram.) Figure 21 As shown, in Figure 10 Based on the packaging structure shown in the figure, Figure 21 The package structure of the bidirectional switch shown also includes a sixth inner pin 1036, a seventh inner pin 1037, a sixth outer pin 1046 coupled to the sixth inner pin 1036, and a seventh outer pin 1047 coupled to the seventh inner pin 1037.

[0181] Among them, the first semiconductor switch Q 101 The third end S 101 (i.e., the source) passes through a thin metal wire L 105 Coupled to the sixth internal pin 1036, the second semiconductor switch Q 102 The third end S 102 (i.e., the source) passes through a thin metal wire L 106 Coupled to the seventh internal pin 1037.

[0182] In some feasible embodiments, a molding compound (e.g., epoxy resin molding) encapsulates a metal base plate and forms a package housing 21 with all the inner pins of a plurality of inner pins. In this case, all inner pins (i.e., the first inner pin 1031, the second inner pin 1032, the third inner pin 1033, the fourth inner pin 1034, the fifth inner pin 1035, the sixth inner pin 1036, and the seventh inner pin 1037) are covered by the package housing 21, while the first outer pin 1041, the second outer pin 1042, the third outer pin 1043, the fourth outer pin 1044, the sixth outer pin 1046, and the seventh outer pin 1047 are exposed outside the package housing 21. At this time, the cut surface formed by removing the portion of the fifth inner pin 1035 that extends beyond the package housing 21 is also exposed outside the package housing 21.

[0183] Therefore, in terms of specific product form, the bidirectional switch semiconductor device provided in this application embodiment has at least 6 external pins and a pin cross-section. That is, relatively having Figure 10 Semiconductor devices with packaging structures in the middle have Figure 21 The semiconductor device with the package structure in the middle has two additional external pins.

[0184] During the leadframe encapsulation process, the leadframe is molded and, after the epoxy resin has cured, the connecting ribs between the outer leads are cut off. See [link / reference needed] at this point. Figure 22A , Figure 22A This is a schematic diagram showing another cut of the lead frame provided in an embodiment of this application. (See attached diagram.) Figure 22A As shown, along Figure 22A The dotted lines in the diagram represent cutting away the connecting ribs, which can yield multiple [likely referring to different types of ribs]. Figure 22B The semiconductor device shown is a bidirectional switch.

[0185] In some feasible implementations, see Figure 23A , Figure 23A This is a schematic diagram showing another cut of the lead frame provided in an embodiment of this application. (See attached diagram.) Figure 23A As shown, the packaging structure of this bidirectional switch (not shown in the figure) is similar to... Figure 21 The difference in the package structure shown lies in the different placement of the fifth inner pin 1035. In this case, the other inner pins (i.e., the first inner pin 1031, the second inner pin 1032, the third inner pin 1033, and the fourth inner pin 1034) are positioned along the first side of the metal base plate, while the fifth inner pin 1035 is positioned along the second side of the metal base plate. The first and second sides are adjacent to each other.

[0186] It needs to be explained that, Figure 23A The second side shown is to the left of the first side, but the second side can also be specifically the right side of the first side (not shown in the figure).

[0187] along Figure 23A The dotted lines in the diagram represent cutting away the connecting ribs, which can yield multiple [likely referring to different types of ribs]. Figure 23B The semiconductor device shown is a bidirectional switch.

[0188] Optionally, in some feasible implementations, see [link to relevant documentation]. Figure 24A , Figure 24A This is a schematic diagram showing another cut of the lead frame provided in an embodiment of this application. (See attached diagram.) Figure 24A As shown, the packaging structure of this bidirectional switch (not shown in the figure) is similar to... Figure 21 The difference in the package structure shown lies in the different placement of the fifth internal pin 1035. In this case, the other internal pins (i.e., the first internal pin 1031, the second internal pin 1032, the third internal pin 1033, and the fourth internal pin 1034) are positioned along the first side of the metal base plate, while the fifth internal pin 1035 is positioned along the third side of the metal base plate. The first and third sides are opposite each other.

[0189] along Figure 24A The dotted lines in the diagram represent cutting away the connecting ribs, which can yield multiple [likely referring to different types of ribs]. Figure 24B The semiconductor device shown is a bidirectional switch.

[0190] Combined with the preceding text Figures 17 to 24B This describes an embodiment of a semiconductor switch specifically implemented as a MOSFET Kelvin connection. The following section introduces an embodiment of a semiconductor switch specifically implemented as an IGBT Kelvin connection.

[0191] See Figure 25 , Figure 25 This is another circuit diagram of a two-way switch. (Example:) Figure 25 As shown, the bidirectional switch includes a first semiconductor switch Q. 141 First diode D 141 Second semiconductor switch Q 142 and the second diode D 142 Among them, the first semiconductor switch Q 141 Including the first terminal (i.e., the collector) and the second terminal G 141 (i.e., the gate) and the third terminal S 141 and K 141 (i.e., emitter) can be understood as S 141 and K 141 The first semiconductor switch Q is at the same potential. 141 Adding an output pin to the emitter allows for the decoupling of the control loop from the power loop. For example, the control loop can be connected from G... 141 Input, from K 141 Output; while the power circuit from S 141Output, from the collector. First semiconductor switch Q 141 The control circuit and power circuit are relatively independent, which can improve the Q of the first semiconductor switch. 141 The switching speed. Similarly, the second semiconductor switch Q... 142 Including the first terminal (i.e., the collector) and the second terminal G 142 (i.e., the gate) and the third terminal S 142 and K 142 (i.e., emitter) can be understood as S 142 and K 142 The second semiconductor switch Q is at the same potential. 142 Adding an output pin to the emitter allows for the decoupling of the control loop from the power loop. For example, the control loop can be connected from G... 142 Input, from K 142 Output; while the power circuit from S 142 Output, from the collector. Second semiconductor switch Q. 142 The control circuit and power circuit are relatively independent, thereby improving the Q of the second semiconductor switch. 142 The switching speed.

[0192] The packaging structure of this bidirectional switch can be found in [reference needed]. Figure 26 , Figure 26 This is a schematic diagram of another packaging structure for a bidirectional switch provided in an embodiment of this application. (See attached diagram.) Figure 26 As shown, in Figure 14 Based on the packaging structure shown in the figure, Figure 26 The package structure of the bidirectional switch shown also includes a sixth inner pin 1436, a seventh inner pin 1437, a sixth outer pin 1446 coupled to the sixth inner pin 1436, and a seventh outer pin 1447 coupled to the seventh inner pin 1437.

[0193] Among them, the first semiconductor switch Q 141 The third end S 141 (i.e., emitter) passes through a thin metal wire L 147 Coupled to the sixth internal pin 1436, the second semiconductor switch Q 142 The third end S 142 (i.e., the collector) passes through a thin metal wire L 148 Coupled to the seventh internal pin 1437.

[0194] In this embodiment, by adding two pins (each pin including an inner pin and an outer pin) to the package structure of the bidirectional switch, the bidirectional switch can achieve Kelvin connection, decoupling the control circuit from the power circuit and improving the switching speed of the semiconductor switch.

[0195] In some feasible embodiments, a molding compound (e.g., epoxy resin molding) encapsulates a metal base plate and forms a package housing 26 with all the inner pins of a plurality of inner pins. In this case, all the inner pins (i.e., the first inner pin 1431, the second inner pin 1432, the third inner pin 1433, the fourth inner pin 1434, the fifth inner pin 1435, the sixth inner pin 1436, and the seventh inner pin 1437) are covered by the package housing 26, while the outer pins corresponding to each inner pin (i.e., the first outer pin 1441, the second outer pin 1442, the third outer pin 1443, the fourth outer pin 1444, the fifth outer pin 1445, the sixth outer pin 1446, and the seventh outer pin 1447) are exposed outside the package housing 26.

[0196] Therefore, in terms of specific product form, the bidirectional switch semiconductor device provided in this application embodiment has at least 7 external pins. That is, relatively having Figure 14 Semiconductor devices with packaging structures in the middle have Figure 26 The semiconductor device with the package structure in the middle has two additional external pins.

[0197] During the leadframe encapsulation process, the leadframe is molded and, after the epoxy resin has cured, the connecting ribs between the outer leads are cut off. At this point, it is still possible to refer to... Figure 18A , Figure 18A This is a schematic diagram showing another cut of the lead frame provided in an embodiment of this application. (See attached diagram.) Figure 18A As shown, along Figure 18A The dotted lines in the diagram represent cutting away the connecting ribs, which can yield multiple [likely referring to different types of ribs]. Figure 18B The semiconductor device shown is a bidirectional switch.

[0198] In some feasible implementations, the lead frame cutting method provided in this application embodiment can also refer to the foregoing description. Figures 19A to 20B The described embodiments are not repeated here.

[0199] Optionally, in some feasible implementations, the portion of the fifth inner pin extending beyond the package housing (i.e., the fifth outer pin) can be cut off. In this case, in a specific product form, the bidirectional switch semiconductor device provided in this application embodiment can be seen to have at least six outer pins and a cross-section of one pin.

[0200] See Figure 27 , Figure 27 This is a schematic diagram of another packaging structure for a bidirectional switch provided in an embodiment of this application. (See attached diagram.) Figure 27As shown, all inner pins (i.e., first inner pin 1431, second inner pin 1432, third inner pin 1433, fourth inner pin 1434, fifth inner pin 1435, sixth inner pin 1436, and seventh inner pin 1437) are covered by the package housing 27, while the first outer pin 1441, second outer pin 1442, third outer pin 1443, fourth outer pin 1444, sixth outer pin 1446, and seventh outer pin 1447 are exposed outside the package housing 27. At this time, the cut surface formed by removing the portion of the fifth inner pin 1435 that extends beyond the package housing 21 is also exposed outside the package housing 27.

[0201] Therefore, in terms of specific product form, the bidirectional switch semiconductor device provided in this application embodiment has at least 6 external pins and a pin cross-section. That is, relatively having Figure 15 The semiconductor device with the package structure shown has Figure 27 The semiconductor device with the package structure shown in the figure has two external pins and a pin cross-section.

[0202] During the leadframe encapsulation process, the leadframe is molded and, after the epoxy resin has cured, the connecting ribs between the outer leads and the fifth outer lead are cut off. See [link / reference needed] at this point. Figure 22A , Figure 22A This is a schematic diagram showing another cut of the lead frame provided in an embodiment of this application. (See attached diagram.) Figure 22A As shown, along Figure 22A The dotted lines in the diagram represent cutting away the connecting ribs, which can yield multiple [likely referring to different types of ribs]. Figure 22B The semiconductor device shown is a bidirectional switch.

[0203] In some feasible implementations, the lead frame cutting method provided in this application embodiment can also refer to the foregoing description. Figures 23A to 24B The described embodiments are not repeated here.

[0204] It should be noted that the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0205] The above description is merely a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in the present invention should be included within the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be determined by the scope of the claims.

Claims

1. A packaging structure for a bidirectional switch, characterized in that, The package structure includes a metal base plate, a first semiconductor switch, a second semiconductor switch, and a plurality of internal pins; the plurality of internal pins include a first internal pin, a second internal pin, a third internal pin, a fourth internal pin, and a fifth internal pin; The first semiconductor switch and the second semiconductor switch are disposed on the metal base plate. The first end of the first semiconductor switch and the first end of the second semiconductor switch are both coupled to the metal base plate. The first end of the first semiconductor switch and the first end of the second semiconductor switch are both drains or both collectors. The second terminal of the first semiconductor switch is coupled to the first internal pin; the third terminal of the first semiconductor switch is coupled to the second internal pin. The second terminal of the second semiconductor switch is coupled to the third internal pin; the third terminal of the second semiconductor switch is coupled to the fourth internal pin; The metal base plate couples the fifth inner pin; each of the plurality of inner pins is coupled to the same lead frame.

2. The packaging structure according to claim 1, characterized in that, The packaging structure further includes a first diode and a second diode; wherein... The first diode and the second diode are disposed on the metal base plate, and the cathodes of the first diode and the second diode are both coupled to the metal base plate; The anode of the first diode is coupled to the second inner pin, and the anode of the second diode is coupled to the fourth inner pin.

3. The packaging structure according to claim 1, characterized in that, The package structure also includes an external pin that corresponds one-to-one with each internal pin; wherein any internal pin is coupled to the external pin corresponding to any internal pin. All of the plurality of inner pins are covered by a package housing, which is formed by molding the metal base plate and all of the plurality of inner pins with a molding compound; the outer pin corresponding to each inner pin is exposed outside the package housing.

4. The packaging structure according to claim 1, characterized in that, The package structure further includes a first external pin coupled to the first internal pin, a second external pin coupled to the second internal pin, a third external pin coupled to the third internal pin, and a fourth external pin coupled to the fourth internal pin; wherein, The first inner pin, the second inner pin, the third inner pin, the fourth inner pin, and the fifth inner pin are all covered by a package shell; the package shell is formed by molding the metal base plate and all the inner pins of the plurality of inner pins with a molding compound; The first external pin, the second external pin, the third external pin, and the fourth external pin are exposed outside the package housing; and the cross-section of the fifth internal pin is exposed outside the package housing, and the cross-section of the fifth internal pin is formed by cutting off the portion of the fifth internal pin that extends beyond the package housing.

5. The packaging structure according to any one of claims 1-4, characterized in that, The plurality of internal pins further includes a sixth internal pin and a seventh internal pin, and the package structure further includes a sixth external pin coupled to the sixth internal pin and a seventh external pin coupled to the seventh internal pin; wherein, The third terminal of the first semiconductor switch is also coupled to the sixth internal pin; the third terminal of the second semiconductor switch is also coupled to the seventh internal pin; Both the sixth inner pin and the seventh inner pin are covered by a package shell, which is formed by molding the metal base plate and all the inner pins of the plurality of inner pins with a molding compound; both the sixth outer pin and the seventh outer pin are exposed outside the package shell.

6. The packaging structure according to any one of claims 1-4, characterized in that, Each of the plurality of internal pins is disposed along a first side of the metal base plate.

7. The packaging structure according to any one of claims 1-4, characterized in that, Of the plurality of inner pins, the other inner pins except the fifth inner pin are arranged along the first side of the metal base plate, and the fifth inner pin is arranged along the second side of the metal base plate; wherein the first side and the second side are adjacent.

8. The packaging structure according to any one of claims 1-4, characterized in that, Of the plurality of internal pins, the other internal pins except the fifth internal pin are arranged along the first side of the metal base plate, and the fifth internal pin is arranged along the third side of the metal base plate; wherein the first side and the third side are opposite to each other.

9. The packaging structure according to any one of claims 1-4, characterized in that, The pin widths of the first inner pin and the third inner pin are smaller than the pin widths of the fifth inner pin, the second inner pin, and the fourth inner pin.

10. A bidirectional switching semiconductor device, characterized in that, The semiconductor device includes a package housing and a chip having a package structure as described in any one of claims 1-9; wherein a portion of the chip's pins are exposed outside the package housing.

11. A power converter, characterized in that, The power converter includes a controller and the semiconductor device as described in claim 10; The controller is used to control the semiconductor device to turn on or off for power conversion.

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