Substrate Encapsulation Method, Display Panel and Display Device

Abstract

The present application relates to a packaging method for a substrate, a display panel, and a display device. The packaging method for the substrate includes: forming a first inorganic layer on a display substrate; forming a second inorganic layer on the first inorganic layer; and forming a third inorganic layer on the second inorganic layer. In the method of the present application, a first inorganic layer is first formed on the display substrate, then a second inorganic layer is formed on the first inorganic layer, and finally a third inorganic layer is formed on the second inorganic layer; wherein the contact surface between the second inorganic layer and the third inorganic layer is a serrated surface. Since the contact surface between the second inorganic layer and the third inorganic layer is a serrated surface, the stress in the third inorganic layer will not act vertically downward on the second inorganic layer entirely. Therefore, the stress transmitted to the display substrate through the second inorganic layer and the first inorganic layer is smaller, thereby reducing the damage to the display panel.

Description

Technical Field

[0001] The present application relates to the field of display technologies, and particularly to a method for encapsulating a substrate, a display panel, and a display device. Background Art

[0002] Thin film encapsulation is a relatively popular encapsulation method in recent years, that is, a thin film with a dense structure is formed on the surface of a substrate on which a display layer has been completed. Due to the density and gaplessness of the thin film, it can physically protect the devices in the encapsulated area to achieve the effect of blocking water vapor and oxygen. The silicon nitride (SiNx) thin film obtained by chemical vapor deposition (CVD) is the most common thin film. Increasing the content of hydrogen in the reaction gas during the preparation of the thin film is beneficial to improving the density of the silicon nitride thin film, but increasing the hydrogen content will also cause an increase in stress in the thin film; among them, hydrogen will prevent the cross-linking of Si and N in the thin film, causing the volume of the thin film to expand, generating compressive stress, and then weakening the original sealing and insulating effects of the silicon nitride thin film. The stress acting on the substrate surface will also affect the performance of the display device. Therefore, on the one hand, the silicon nitride thin film needs to have good density, and on the other hand, the silicon nitride thin film also needs to have low stress to reduce the impact of stress on the performance of the display device.

[0003] The existing thin film encapsulation method is to form multiple inorganic layers and organic layers in an alternating manner to achieve the effect of hermetic encapsulation, and the contact surface between adjacent two layers of the film is a flat surface; therefore, the stress in the upper layer film of adjacent two layers will act vertically downward on the lower layer film, and this stress will also indirectly act on the surface of the display substrate through the conduction of the lower layer film, thereby affecting the performance of the finished display device. Summary of the Invention

[0004] Based on this, the embodiments of the present application provide a method for encapsulating a substrate, a display panel, and a display device, which are used to reduce the stress conducted from the film-forming layer to the display substrate, thereby reducing the damage to the display panel.

[0005] In order to achieve the above object, the embodiments of the present application provide a method for encapsulating a substrate, and the method for encapsulating the substrate includes:

[0006] Forming a first inorganic layer on the display substrate;

[0007] Forming a second inorganic layer on the first inorganic layer;

[0008] Forming a third inorganic layer on the second inorganic layer;

[0009] Wherein, the contact surface between the second inorganic layer and the third inorganic layer is a serrated surface.

[0010] Optionally, a first reaction gas is introduced during the formation of the first inorganic layer, a second reaction gas is introduced during the formation of the second inorganic layer, and a third reaction gas is introduced during the formation of the third inorganic layer;

[0011] Wherein, the hydrogen content in the first reaction gas is lower than the hydrogen content in the second reaction gas, and the hydrogen content in the second reaction gas is lower than the hydrogen content in the third reaction gas.

[0012] Optionally, the difference between the hydrogen content in the second reaction gas and the hydrogen content in the first reaction gas is a preset value; the difference between the hydrogen content in the third reaction gas and the hydrogen content in the second reaction gas is the preset value.

[0013] Optionally, the contact surface between the second inorganic layer and the third inorganic layer is a rectangular serrated surface.

[0014] Optionally, the encapsulation method of the substrate further includes:

[0015] Forming a fourth inorganic layer on the third inorganic layer;

[0016] Forming a fifth inorganic layer on the fourth inorganic layer;

[0017] Wherein, the contact surface between the fourth inorganic layer and the fifth inorganic layer is a serrated surface.

[0018] Optionally, a fourth reaction gas is introduced during the formation of the fourth inorganic layer, and a fifth reaction gas is introduced during the formation of the fifth inorganic layer;

[0019] Wherein, the hydrogen content in the third reaction gas is lower than the hydrogen content in the fourth reaction gas, and the hydrogen content in the fourth reaction gas is lower than the hydrogen content in the fifth reaction gas.

[0020] Optionally, the difference between the hydrogen content in the fourth reaction gas and the hydrogen content in the third reaction gas is a preset value; the difference between the hydrogen content in the fifth reaction gas and the hydrogen content in the fourth reaction gas is the preset value.

[0021] Optionally, the contact surface between the fourth inorganic layer and the fifth inorganic layer is a rectangular serrated surface.

[0022] On the other hand, an embodiment of the present application further provides a display panel, and the display panel is manufactured by using any of the above methods.

[0023] On the other hand, an embodiment of the present application further provides a display device, including a controller and any of the above display panels; the controller is connected to the display panel.

[0024] One of the above technical solutions has the following advantages and beneficial effects:

[0025] The present application provides a method for encapsulating a substrate, a display panel, and a display device. First, a first inorganic layer is formed on a display substrate, then a second inorganic layer is formed on the first inorganic layer, and finally a third inorganic layer is formed on the second inorganic layer; wherein the contact surface between the second inorganic layer and the third inorganic layer is a serrated surface. Since the contact surface between the second inorganic layer and the third inorganic layer is a serrated surface, the stress in the third inorganic layer will not all act vertically downward on the second inorganic layer. Therefore, the stress conducted to the display substrate through the second inorganic layer and the first inorganic layer is smaller, thereby reducing damage to the display panel. Description of the Drawings

[0026] Figure 1 It is a flowchart of the steps of the method for encapsulating a substrate provided by an embodiment of the present application.

[0027] Figure 2 It is a schematic structural diagram of a substrate and a marking chip after the execution of step S11 provided by an embodiment of the present application.

[0028] Figure 3 It is a schematic structural diagram of a substrate and a marking chip after the execution of step S12 provided by an embodiment of the present application.

[0029] Figure 4 It is a schematic structural diagram of a substrate and a marking chip after the execution of step S13 provided by an embodiment of the present application.

[0030] Figure 5 is Figure 4 a partial enlarged view of A in

[0031] Figure 6 It is a flowchart of the steps of another method for encapsulating a substrate provided by an embodiment of the present application.

[0032] Figure 7 It is a schematic structural diagram of a substrate and a marking chip after the execution of step S14 provided by an embodiment of the present application.

[0033] Figure 8 It is a schematic structural diagram of a substrate and a marking chip after the execution of step S15 provided by an embodiment of the present application. Detailed Embodiments

[0034] To facilitate the understanding of the present application, the present application will be described more comprehensively below with reference to the relevant drawings. The preferred embodiments of the present application are shown in the drawings. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, these embodiments are provided to make the disclosure of the present application more thorough and comprehensive.

[0035] In the description of the present application, it should be understood that the orientation or positional relationship indicated by the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc. is based on the orientation or positional relationship shown in the drawings. It is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation on the present application.

[0036] In addition, the terms "first" and "second" are only used for descriptive purposes and should not be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include one or more of the said features. In the description of the present application, "a plurality of" means two or more unless otherwise specifically defined.

[0037] With the continuous development of the display panel industry, organic light-emitting diode panels (OLEDs) with the advantages of self-luminescence, low power consumption, wide viewing angle, fast response speed, and bendability have attracted more and more extensive attention. The encapsulation effect of OLEDs is an important factor affecting device performance and device life. The device is very sensitive to water vapor and oxygen. Therefore, developing and researching an efficient encapsulation method can not only extend the device life but also promote the progress of the entire industry. Thin-film encapsulation is a relatively popular encapsulation method in recent years, that is, a thin film with a dense structure is formed on the surface of the substrate on which the display layer has been completed. Due to the density and gaplessness of the thin film, it can physically protect the devices in the encapsulation area to achieve the effect of blocking water vapor and oxygen. The silicon nitride (SiNx) thin film obtained by chemical vapor deposition (CVD) is the most common type of thin film. Increasing the content of hydrogen in the reaction gas during the preparation of the thin film is beneficial to improving the density of the silicon nitride thin film, but increasing the hydrogen content will also lead to an increase in stress in the thin film. Among them, hydrogen will prevent the cross-linking of Si and N in the thin film, causing the thin film to expand in volume and generating compressive stress, thereby weakening the original sealing and insulating effects of the silicon nitride thin film. The stress acting on the surface of the substrate will also affect the performance of the display device. Therefore, on the one hand, the silicon nitride thin film needs to have good density, and on the other hand, the silicon nitride thin film also needs to have low stress to reduce the impact of stress on the performance of the display device.

[0038] The existing thin-film encapsulation method is to form multiple inorganic layers and organic layers in an interleaved manner to achieve the effect of hermetic encapsulation, and the contact surface between adjacent two layers of films is a flat surface; thus, the stress in the upper layer of film in adjacent two layers will act vertically downward on the lower layer of film, and this stress will also indirectly act on the surface of the display substrate through the conduction of the lower layer of film, thereby affecting the performance of the finished display device. Therefore, this application hopes to reduce the stress through the shape of the contact surface, and then reduce the damage to the display device. In summary, this application hopes to propose an encapsulation method that can both block water vapor and oxygen and reduce the stress of the encapsulation film layer to solve the problems existing in the prior art.

[0039] To reduce the stress conducted from the film layer to the display substrate and thus reduce the damage to the display panel, the embodiments of this application provide an encapsulation method for a substrate, a display panel, and a display device, which will be described below with reference to the accompanying drawings. Exemplarily, please refer to Figure 1 , Figure 1 which is a flowchart of the steps of the encapsulation method for the substrate provided by the embodiments of this application. The encapsulation method for the substrate includes the following steps:

[0040] S11. Form a first inorganic layer 11 on the display substrate 16;

[0041] S12. Form a second inorganic layer 12 on the first inorganic layer 11;

[0042] S13. Form a third inorganic layer 13 on the second inorganic layer 12;

[0043] Wherein, the contact surface between the second inorganic layer 12 and the third inorganic layer 13 is a serrated surface.

[0044] For the encapsulation method for the substrate provided by the embodiments of this application, first form a first inorganic layer 11 on the display substrate 16, then form a second inorganic layer 12 on the first inorganic layer 11, and finally form a third inorganic layer 13 on the second inorganic layer 12; wherein the contact surface between the second inorganic layer 12 and the third inorganic layer 13 is a serrated surface. Since the contact surface between the second inorganic layer 12 and the third inorganic layer 13 is a serrated surface, the stress in the third inorganic layer 13 will not all act vertically downward on the second inorganic layer 12. Therefore, the stress conducted to the display substrate 16 through the second inorganic layer 12 and the first inorganic layer 11 is smaller, thus reducing the damage to the display panel.

[0045] Exemplarily, a first reaction gas is introduced during the formation of the first inorganic layer 11, a second reaction gas is introduced during the formation of the second inorganic layer 12, and a third reaction gas is introduced during the formation of the third inorganic layer 13;

[0046] Among them, the hydrogen content in the first reaction gas is lower than that in the second reaction gas, and the hydrogen content in the second reaction gas is lower than that in the third reaction gas.

[0047] The above-mentioned first inorganic layer 11, second inorganic layer 12, and third inorganic layer 13 are silicon nitride layers. Introducing hydrogen during the deposition of the silicon nitride layer can improve the density of the silicon nitride layer. In the embodiments of the present application, the amount of hydrogen introduced during the deposition of the first inorganic layer 11, second inorganic layer 12, and third inorganic layer 13 increases sequentially. On the one hand, it ensures that the density of the first inorganic layer 11, second inorganic layer 12, and third inorganic layer 13 increases sequentially. On the other hand, it also increases the stress gradient of the first inorganic layer 11, second inorganic layer 12, and third inorganic layer 13. Due to the existence of the second inorganic layer 12, the stress exerted by the third inorganic layer 13 on the display substrate 16 can be attenuated. And due to the existence of the first inorganic layer 11, the stress exerted by the second inorganic layer 12 and the third inorganic layer 13 on the display substrate 16 can be attenuated, thereby reducing the stress acting on the display substrate 16 and reducing the damage to the display panel.

[0048] Exemplarily, the difference between the hydrogen content in the second reaction gas and the hydrogen content in the first reaction gas is a preset value; the difference between the hydrogen content in the third reaction gas and the hydrogen content in the second reaction gas is the preset value.

[0049] In the embodiments of the present application, the amount of hydrogen introduced during the deposition of the first inorganic layer 11, second inorganic layer 12, and third inorganic layer 13 increases sequentially, and the increase amount of the amount of hydrogen introduced during the deposition of the first inorganic layer 11, second inorganic layer 12, and third inorganic layer 13 is the same. Exemplarily, the above-mentioned preset value is 5%; for example, if the hydrogen content in the first reaction gas is 3% to 5%, then the hydrogen content in the second reaction gas is 8% to 10%, and the hydrogen content in the third reaction gas is 13% to 15%.

[0050] In the present application, the contact surface between the second inorganic layer 12 and the third inorganic layer 13 is a serrated surface, and the serrated surface can be a triangular serrated surface, a rectangular serrated surface, a square serrated surface, a trapezoidal serrated surface, a wavy serrated surface, etc.

[0051] After performing the above step S11 as Figure 2 shown, after performing the above step S12 as Figure 3 shown, after performing the above step S13 as Figure 4 shown, Figure 4 The contact surface between the second inorganic layer 12 and the third inorganic layer 13 described in Figure 5As shown, since the contact surface between the second inorganic layer 12 and the third inorganic layer 13 is a rectangular serrated surface, the lateral stress in the third inorganic layer 13 only acts on the second inorganic layer 12 and will not be conducted to the display substrate 16. Therefore, the vertical stress conducted to the display substrate 16 is smaller, thereby reducing damage to the display panel. Among them, the lateral stress is Figure 5 the stress represented by the left and right arrow directions in Figure 5 and the vertical stress is the stress represented by the up and down arrow directions in

[0052] Exemplarily, as Figure 6 shown, the above substrate encapsulation method further includes:

[0053] S14. Form a fourth inorganic layer 14 on the third inorganic layer 13;

[0054] S15. Form a fifth inorganic layer 15 on the fourth inorganic layer 14;

[0055] Among them, the contact surface between the fourth inorganic layer 14 and the fifth inorganic layer 15 is a serrated surface.

[0056] The above substrate encapsulation method further forms a fourth inorganic layer 14 on the third inorganic layer 13 and forms a fifth inorganic layer 15 on the fourth inorganic layer 14, where the contact surface between the fourth inorganic layer 14 and the fifth inorganic layer 15 is a serrated surface. Since the contact surface between the fourth inorganic layer 14 and the fifth inorganic layer 15 is a serrated surface, the stress in the fifth inorganic layer 15 does not all act vertically downward on the fourth inorganic layer 14. Therefore, the stress conducted to the display substrate 16 through the fourth inorganic layer 14, the third inorganic layer 13, the second inorganic layer 12, and the first inorganic layer 11 in sequence is smaller, thereby reducing damage to the display panel.

[0057] Exemplarily, a fourth reaction gas is introduced during the formation of the fourth inorganic layer 14, and a fifth reaction gas is introduced during the formation of the fifth inorganic layer 15;

[0058] Among them, the hydrogen content in the third reaction gas is lower than the hydrogen content in the fourth reaction gas, and the hydrogen content in the fourth reaction gas is lower than the hydrogen content in the fifth reaction gas.

[0059] The above-mentioned fourth inorganic layer 14 and fifth inorganic layer 15 are silicon nitride layers. Introducing hydrogen during the deposition process of the silicon nitride layer can improve the density of the silicon nitride layer. During the deposition process of the first inorganic layer 11, second inorganic layer 12, third inorganic layer 13, fourth inorganic layer 14, and fifth inorganic layer 15 in the embodiments of the present application, the amount of hydrogen introduced increases sequentially. On the one hand, it ensures that the density of the first inorganic layer 11, second inorganic layer 12, third inorganic layer 13, fourth inorganic layer 14, and fifth inorganic layer 15 increases sequentially. On the other hand, it also increases the stress gradient of the first inorganic layer 11, second inorganic layer 12, third inorganic layer 13, fourth inorganic layer 14, and fifth inorganic layer 15. Due to the existence of the fourth inorganic layer 14, the stress exerted by the fifth inorganic layer 15 on the display substrate 16 can be attenuated; due to the existence of the third inorganic layer 13, the stress exerted by the fifth inorganic layer 15 and the fourth inorganic layer 14 on the display substrate 16 can be attenuated; due to the existence of the second inorganic layer 12, the stress exerted by the fifth inorganic layer 15, the fourth inorganic layer 14, and the third inorganic layer 13 on the display substrate 16 can be attenuated; and due to the existence of the first inorganic layer 11, the stress exerted by the fifth inorganic layer 15, the fourth inorganic layer 14, the third inorganic layer 13, and the second inorganic layer 12 on the display substrate 16 can be attenuated, thereby reducing the stress acting on the display substrate 16 and reducing the damage to the display panel.

[0060] Exemplarily, the difference between the hydrogen content in the fourth reaction gas and the hydrogen content in the third reaction gas is a preset value; the difference between the hydrogen content in the fifth reaction gas and the hydrogen content in the fourth reaction gas is the preset value.

[0061] Exemplarily, the contact surface between the fourth inorganic layer 14 and the fifth inorganic layer 15 is a rectangular serrated surface.

[0062] In the present application, the contact surface between the fourth inorganic layer 14 and the fifth inorganic layer 15 is a serrated surface, and this serrated surface can be a triangular serrated surface, a rectangular serrated surface, a square serrated surface, a trapezoidal serrated surface, a wavy serrated surface, etc.

[0063] After performing the above step S14 as Figure 7 shown, after performing the above step S15 as Figure 8 shown, Figure 8 in which the contact surface between the fourth inorganic layer 14 and the fifth inorganic layer 15 is a rectangular serrated surface. Again, as Figure 8 shown, since the contact surface between the fourth inorganic layer 14 and the fifth inorganic layer 15 is a rectangular serrated surface, the lateral stress in the fifth inorganic layer 15 will only act on the fourth inorganic layer 14, and the lateral stress will not be conducted to the display substrate 16. Therefore, the vertical stress conducted to the display substrate 16 is smaller, thereby reducing the damage to the display panel.

[0064] Exemplarily, as Figure 8 shown, the contact surface between the second inorganic layer 12 and the third inorganic layer 13 is a first rectangular serrated surface, and the contact surface between the fourth inorganic layer 14 and the fifth inorganic layer 15 is a second rectangular serrated surface. Again, as Figure 8 shown, the first rectangular serrated surface and the second rectangular serrated surface are misaligned in the horizontal direction; that is, when the first rectangular serrated surface is convex in the horizontal direction, the second rectangular serrated surface is concave; when the first rectangular serrated surface is concave, the second rectangular serrated surface is convex.

[0065] After such a setting, it is possible to avoid the vertical stress conducted from the third inorganic layer 13 to the display substrate 16 from being superimposed on the vertical stress conducted from the fifth inorganic layer 15 to the display substrate 16; that is, to avoid the vertical stress conducted from the third inorganic layer 13 to the display substrate 16 and the vertical stress conducted from the fifth inorganic layer 15 to the display substrate 16 from being concentrated on the display substrate 16 after superposition, thereby reducing damage to the display panel.

[0066] Exemplarily, when depositing the second inorganic layer 12, a mask can be used to cover the first inorganic layer 11 for deposition. The mask is provided with a number of evenly distributed rectangular holes along the horizontal direction ( Figure 8 middle), so that the deposited second inorganic layer 12 is serrated. When depositing the fourth inorganic layer 14, a mask can be used to cover the third inorganic layer 13 for deposition, so that the deposited fourth inorganic layer 14 is serrated; wherein, in the horizontal direction, the position of the mask during the deposition of the fourth inorganic layer 14 needs to be misaligned with the position of the mask during the deposition of the second inorganic layer 12, so that the above-mentioned first rectangular serrated surface and the second rectangular serrated surface are misaligned in the horizontal direction.

[0067] Exemplarily, as Figure 8 shown, the contact surface between the first inorganic layer 11 and the second inorganic layer 12 is a plane, and the contact surface between the third inorganic layer 13 and the fourth inorganic layer 14 is a plane.

[0068] During the deposition of the first inorganic layer 11, the second inorganic layer 12, the third inorganic layer 13, the fourth inorganic layer 14, and the fifth inorganic layer 15 in the embodiments of the present application, the amount of hydrogen introduced increases in sequence, and the increase amount of the amount of hydrogen introduced during the deposition of the first inorganic layer 11, the second inorganic layer 12, the third inorganic layer 13, the fourth inorganic layer 14, and the fifth inorganic layer 15 is the same. Exemplarily, the above preset value is 5%; for example, if the hydrogen content in the first reaction gas is 3% to 5%, then the hydrogen content in the second reaction gas is 8% to 10%, the hydrogen content in the third reaction gas is 13% to 15%, the hydrogen content in the fourth reaction gas is 18% to 20%, and the hydrogen content in the fifth reaction gas is 23% to 25%.

[0069] The present invention also provides a display panel, which is manufactured by using the method provided in the above embodiment.

[0070] Exemplarily, as Figure 8 described above, the above display panel includes a display substrate 16, a first inorganic layer 11, and second and third inorganic layers 13. The display substrate 16, the first inorganic layer 11, and the second and third inorganic layers 13 are sequentially stacked, wherein the contact surface between the second inorganic layer 12 and the third inorganic layer 13 is a serrated surface.

[0071] In the display panel provided by the embodiment of the present application, since the contact surface between the second inorganic layer 12 and the third inorganic layer 13 is a serrated surface, the stress in the third inorganic layer 13 will not act vertically downward on the second inorganic layer 12 entirely. Therefore, the stress conducted to the display substrate 16 through the second inorganic layer 12 and the first inorganic layer 11 is smaller, thereby reducing the damage to the display panel.

[0072] Exemplarily, the contact surface between the second inorganic layer 12 and the third inorganic layer 13 is a rectangular serrated surface.

[0073] Exemplarily, as Figure 8 described above, the above display panel further includes fourth and fifth inorganic layers 15. The display substrate 16, the first inorganic layer 11, the second and third inorganic layers 13, and the fourth and fifth inorganic layers 15 are sequentially stacked, wherein the contact surface between the fourth inorganic layer 14 and the fifth inorganic layer 15 is a serrated surface.

[0074] Exemplarily, the contact surface between the fourth inorganic layer 14 and the fifth inorganic layer 15 is a rectangular serrated surface.

[0075] Exemplarily, as Figure 8 described above, the contact surface between the second inorganic layer 12 and the third inorganic layer 13 is a first rectangular serrated surface, and the contact surface between the fourth inorganic layer 14 and the fifth inorganic layer 15 is a second rectangular serrated surface. The first rectangular serrated surface and the second rectangular serrated surface are misaligned in the horizontal direction.

[0076] The present invention also provides a display device, which includes: a controller and the display panel provided by the above embodiment; the controller is connected to the display panel. It should be noted that the display device provided by the embodiment of the present invention may further include other circuits and devices for supporting the normal operation of the display device. The above display device may be one of a mobile phone, a tablet computer, an electronic paper, and an electronic photo frame. The controller controls the display panel.

[0077] In summary, the present application provides a method for encapsulating a substrate, a display panel, and a display device. First, a first inorganic layer 11 is formed on a display substrate 16, then a second inorganic layer 12 is formed on the first inorganic layer 11, and finally a third inorganic layer 13 is formed on the second inorganic layer 12; wherein the contact surface between the second inorganic layer 12 and the third inorganic layer 13 is a serrated surface. Since the contact surface between the second inorganic layer 12 and the third inorganic layer 13 is a serrated surface, the stress in the third inorganic layer 13 will not act vertically downward on the second inorganic layer 12 entirely. Therefore, the stress transmitted to the display substrate 16 through the second inorganic layer 12 and the first inorganic layer 11 is smaller, thereby reducing damage to the display panel.

[0078] The technical features of the above-described embodiments can be combined arbitrarily. For the sake of brevity of description, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, it should be considered as the scope recorded in this specification.

[0079] The above-described embodiments merely represent several implementation manners of the present application. The description is relatively specific and detailed, but it should not be construed as a limitation on the scope of the patent application. It should be noted that for those of ordinary skill in the art, without departing from the concept of the present application, several deformations and improvements can still be made, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent of the present application shall be subject to the appended claims.

Claims

1. A packaging method for a substrate, characterized in that, The encapsulation method of the substrate includes: Forming a first inorganic layer on the display substrate; Forming a second inorganic layer on the first inorganic layer; Forming a third inorganic layer on the second inorganic layer; Forming a fourth inorganic layer on the third inorganic layer; Forming a fifth inorganic layer on the fourth inorganic layer; Wherein, the contact surface between the first inorganic layer and the second inorganic layer is a plane, and the contact surface between the second inorganic layer and the third inorganic layer is a serrated surface; at least part of the third inorganic layer is embedded in the second inorganic layer and contacts the first inorganic layer; The fourth inorganic layer protrudes from the surface of the third inorganic layer, and the contact surface between the fourth inorganic layer and the fifth inorganic layer is a serrated surface; at least part of the fifth inorganic layer is embedded in the fourth inorganic layer and contacts the third inorganic layer; A first reaction gas is introduced during the formation of the first inorganic layer, a second reaction gas is introduced during the formation of the second inorganic layer, and a third reaction gas is introduced during the formation of the third inorganic layer; Wherein, the hydrogen content in the first reaction gas is lower than the hydrogen content in the second reaction gas, and the hydrogen content in the second reaction gas is lower than the hydrogen content in the third reaction gas; The difference between the hydrogen content in the second reaction gas and the hydrogen content in the first reaction gas is a preset value; the difference between the hydrogen content in the third reaction gas and the hydrogen content in the second reaction gas is the preset value; Wherein, a fourth reaction gas is introduced during the formation of the fourth inorganic layer, and a fifth reaction gas is introduced during the formation of the fifth inorganic layer; Wherein, the hydrogen content in the third reaction gas is lower than the hydrogen content in the fourth reaction gas, and the hydrogen content in the fourth reaction gas is lower than the hydrogen content in the fifth reaction gas; The serrated surface between the second inorganic layer and the third inorganic layer is arranged in a staggered manner with the serrated surface between the fourth inorganic layer and the fifth inorganic layer.

2. The encapsulation method of the substrate according to claim 1, characterized in that, The difference between the hydrogen content in the fourth reaction gas and the hydrogen content in the third reaction gas is a preset value; the difference between the hydrogen content in the fifth reaction gas and the hydrogen content in the fourth reaction gas is the preset value.

3. The encapsulation method of the substrate according to claim 2, wherein, The contact surface between the fourth inorganic layer and the fifth inorganic layer is a rectangular serrated surface.

4. A display panel, characterized in that, The display panel is prepared by the method according to any one of claims 1 to 3.

5. A display device, characterized in that, Comprising a controller and the display panel according to claim 4; the controller is connected to the display panel.

Images