A novel neurophotonic electrode

Abstract

This invention discloses a novel neurophotoelectrode, comprising: a chip for vertically emitting modulated laser light to an electrode structure; and an electrode structure with its tip positioned away from the chip, capable of simultaneously transmitting optical and electrical signals. Both the chip and the electrode structure utilize a flexible silicon substrate, are coupled together, and encapsulated within a flexible material. This novel neurophotoelectrode is a new brain electrode structure combining a silicon photonic waveguide (PIC) with a flexible Utah electrode. Besides transmitting and receiving neuronal electrical signals, it can achieve deeper stimulation via laser light. Furthermore, utilizing the PIC chip's MZ modulation technology, it can achieve targeted and quantitative optical signal stimulation based on feedback signals. Its flexibility reduces brain damage, while simultaneously achieving photoelectric stimulation, increasing stimulation depth, and expanding its application scope, demonstrating broad application prospects.

Description

Technical Field

[0001] This invention belongs to the field of neural photoelectrode technology, and specifically relates to a novel neural photoelectrode. Background Technology

[0002] Neural electrodes, as a core component of brain-computer interfaces, are electrophysiological devices that interact with neurons. They can be used to record or intervene in neural activity and have applications in medical or virtual reality fields. Typically, neural electrodes are arrayed needle-like electrodes formed from highly silicon-doped or metal electrodes. However, to better receive and record neural signals, the electrodes need to be implanted into the cerebral cortex or even by piercing the dura mater. This implantation process inevitably causes brain damage. Furthermore, during human movement, rigid electrodes can also cause brain damage due to stress. Therefore, improving stimulation depth while minimizing brain damage has become an important research direction.

[0003] Thanks to the development of optogenetics, for certain cell types where electrical signals cannot directly act on neural circuits, photosensitive channel proteins can be selectively expressed on specific types of neurons through genetic engineering. Light can then be used to stimulate and inhibit neuronal activity. Neurons that do not express photosensitive channel proteins do not respond to light stimulation, thereby achieving cell-specific regulation. Summary of the Invention

[0004] To address the technical problems existing in the prior art, the present invention aims to provide a novel neural photoelectrode.

[0005] To achieve the above objectives and technical effects, the technical solution adopted by this invention is as follows:

[0006] A novel neural photoelectrode, comprising:

[0007] Chip, the chip being used to vertically emit modulated laser light to an electrode structure;

[0008] The electrode structure has its tip far from the chip, and the electrode structure is capable of transmitting both optical and electrical signals simultaneously.

[0009] Both the chip and electrode structure use flexible silicon substrates, are coupled together, and are encapsulated in flexible materials.

[0010] Furthermore, the electrode structure includes a silicon electrode array formed by arranging several silicon electrode arrays, with the silicon electrodes being insulated from each other. The chip has a vertical emission port array that matches the size of the silicon electrode array. The length, distance, diameter, etc. of the silicon electrode array can be adjusted according to the signal density or stimulation range of the actual application. The corresponding PIC chip should also adjust the position of the emission port to match the silicon electrode array.

[0011] Furthermore, the chip has a built-in electrode group adapted to the electrode structure. The electrodes of the electrode group correspond one-to-one with the electrodes of the electrode structure and are adapted to each other. The electrodes of the electrode group are in contact with the back side of the electrodes of the adapted electrode structure.

[0012] Furthermore, the chip is a PIC chip, and a spot adapter for adjusting the waveguide size at the light inlet is selectively provided at the light inlet port of the chip.

[0013] Furthermore, the silicon electrode is a highly doped, low-resistivity flexible silicon, an insulating layer is provided on the outer surface of the silicon electrode, the tip of the silicon electrode is exposed, and a metal layer is provided on the periphery of the tip.

[0014] Furthermore, the outer surface of the silicon electrode is selectively coated with a coating to reduce rejection by biological tissues and improve corrosion resistance.

[0015] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0016] This invention discloses a novel neurophotoelectrode, comprising: a chip for vertically emitting modulated laser light to an electrode structure; and an electrode structure with its tip positioned away from the chip, capable of simultaneously transmitting optical and electrical signals. Both the chip and the electrode structure utilize a flexible silicon substrate, are coupled together, and encapsulated within a flexible material. This novel neurophotoelectrode is a new brain electrode structure combining a silicon photonic waveguide (PIC) and a flexible Utah electrode. Besides transmitting and receiving neuronal electrical signals, it can achieve deeper stimulation via laser light. Furthermore, utilizing the PIC chip's MZ modulation technology, it can achieve targeted and quantitative optical signal stimulation based on feedback signals. Its flexibility reduces brain damage, while simultaneously achieving photoelectric stimulation, increasing stimulation depth, and expanding its application scope, demonstrating broad application prospects. Attached Figure Description

[0017] Figure 1 This is a schematic diagram of the structure of the present invention;

[0018] Figure 2 This is a schematic diagram of the electrode structure of the present invention;

[0019] Figure 3 This is a schematic diagram of the silicon electrode structure of the present invention;

[0020] Figure 4 This is a design diagram of the chip of the present invention. Detailed Implementation

[0021] The present invention will now be described in detail so that its advantages and features can be more easily understood by those skilled in the art, thereby providing a clearer and more explicit definition of the scope of protection of the present invention.

[0022] The following provides a brief overview of one or more aspects to offer a basic understanding of them. This overview is not an exhaustive summary of all conceived aspects, nor is it intended to identify key or decisive elements of all aspects, nor to define the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form to prepare for the more detailed descriptions that follow.

[0023] like Figure 1-4 As shown, a novel neural photoelectrode includes:

[0024] Chip 1, which is used to vertically emit modulated laser to electrode structure 2;

[0025] Electrode structure 2 can transmit optical signals and electrical signals simultaneously. The tip 3 of electrode structure 2 is far away from chip 1. The tip 3 can receive optical signals and electrical signals simultaneously.

[0026] Both chip 1 and electrode structure 2 use flexible silicon substrates, are coupled together, and are encapsulated in flexible material 4, which is made of PDMS or other biocompatible flexible polymers.

[0027] As one specific implementation scheme, chip 1 is a PIC chip that receives light from the side and can vertically emit modulated laser light through a grating. A spot adapter is selectively set at the light inlet of chip 1 to facilitate adjustment of the waveguide size at the light inlet to adapt to different laser spots. The PIC chip forms a vertically emitting light port array that matches the spacing of the silicon electrode array.

[0028] Chip 1 has a built-in electrode group 10 that is adapted to electrode structure 2. Each electrode of electrode group 10 corresponds to and is adapted to a silicon electrode 5 of electrode structure 2. The electrodes of the electrode group are in contact with the back side of the silicon electrode 5 of the adapted electrode structure 2.

[0029] Electrode structure 2 includes a silicon electrode array formed by a number of silicon electrodes 5 arranged in an array. The silicon electrodes 5 are made of highly doped, low-resistivity flexible silicon. The silicon electrodes 5 are insulated from each other. For example, each silicon electrode 5 can be insulated by etching grooves and high-temperature sintering with glass or other insulating materials. The length, spacing, diameter, etc. of the silicon electrode array can also be adjusted according to the signal density or stimulation range of the actual application. The corresponding PIC chip should also be matched with the silicon electrode array to adjust the position of the light output port.

[0030] An insulating layer 6 is provided on the outer surface of each silicon electrode 5. The insulating layer 6 can be an organic insulating material coated on the outer surface of the silicon electrode 5 or an insulating layer formed by high-temperature oxidation of the surface. The tip 3 of the silicon electrode 5 is exposed by etching with hydrofluoric acid. A metal layer 7 is plated around the exposed tip 3 on each silicon electrode 5. The metal layer 7 does not completely cover the tip 3. The charge transfer capability can be enhanced by setting the metal layer 7. The outer surface of each silicon electrode 5 can also selectively add a coating to reduce biological tissue rejection and improve corrosion resistance.

[0031] The working principle of this invention is as follows:

[0032] An external laser source is coupled into chip 1 via a lens / fiber optic cable. Before coupling into chip 1, a beam adapter can be selectively added. The waveguide forms a Y-shaped branch 8. After MZ modulation, the light is emitted from the circular center O through a grating. An electrode group 10 is formed around the laser source, with each electrode in the group corresponding to and adapted to a silicon electrode 5 in electrode structure 2. The electrodes in the group 10 are in contact with the back of the silicon electrode 5 in the adapted electrode structure 2. Electrical signals are transmitted and received through the metal layer 7 surrounding the tip 3 of the silicon electrode 5 and then conducted through the circuit 9 via the electrode group 10. The PIC chip uses this unit as its basic design concept to form a vertically emitting optical port array that matches the spacing of the silicon electrode array.

[0033] After the chip 1 vertically emits a modulated laser, the laser is coupled into the electrode structure 2, where it can emit light from the tip 3. Chip 1 and electrode structure 2 are thinned using grinding, lapping, dry polishing, chemical mechanical planarization, electrochemical etching, wet etching, plasma-enhanced chemical etching, or atmospheric pressure plasma etching, resulting in a flexible structure. Chip 1 and electrode structure 2 are encapsulated by a flexible material 4, forming an overall flexible structure. The extraction of photoelectric signals can be achieved using techniques well-known to those skilled in the art and will not be elaborated upon here.

[0034] It should be noted that when the waveguide diameter of chip 1 is large, the thickness cannot be further reduced due to the limited waveguide size, which may reduce its flexibility. The flexibility will be more apparent when the waveguide diameter is small.

[0035] Any parts or structures not specifically described in this invention can be made using existing technologies or products, and will not be elaborated upon here.

[0036] The above description is merely an embodiment of the present invention and does not limit the patent scope of the present invention. Any equivalent structural or procedural transformations made based on the content of the present invention specification, or direct or indirect applications in other related technical fields, are similarly included within the patent protection scope of the present invention.

Claims

1. A novel neural optoelectrode characterized in that, It comprises: a chip for vertically emitting modulated laser to electrode structure; an electrode structure with its tip away from the chip, which can conduct optical signal and electrical signal at the same time; both the chip and the electrode structure use flexible silicon substrate, and are connected by coupling and encapsulated in flexible material; the chip is a PIC chip, which receives light and vertically emits modulated laser through grating, and forms a vertical light emitting port array with a size matching that of the silicon electrode array; the electrode structure comprises a silicon electrode array arranged by a plurality of silicon electrode arrays, and the silicon electrodes are insulated from each other, and the chip has a vertical light emitting port array with a size matching that of the silicon electrode array; a spot adapter is arranged at the light inlet of the chip for adjusting the waveguide size at the light inlet; the chip is internally provided with an electrode group adapted to the electrode structure; the silicon electrode is flexible silicon with high doping and low resistance, and an insulating layer is arranged on the outer surface of the silicon electrode, and the tip of the silicon electrode is exposed, and a metal layer is arranged on the peripheral part of the tip; an external laser light source is coupled into the chip through a lens / fiber, and a spot adapter is added before being coupled into the chip, and the waveguide forms a Y-shaped branch, and emits from the center O after MZ modulation through a grating, and a circle of electrodes is formed around the center O to form an electrode group, each electrode of the electrode group corresponds to one silicon electrode of the electrode structure one by one, and the electrodes of the electrode group contact the back surface of the silicon electrodes of the electrode structure, the electrical signal is received and transmitted through the metal layer around the tip of the silicon electrode and is conducted by the circuit through the electrode group, and the chip forms a vertical light emitting port array with a size matching that of the silicon electrode array based on the unit as the basic design concept; after the chip vertically emits modulated laser, the laser enters the electrode structure after coupling, and emits from the tip, and the chip and the electrode structure are thinned and flexible, and are encapsulated by flexible material, and the whole is a flexible structure.

2. A novel neural optoelectrode according to claim 1, characterized in that, The outer surface of the silicon electrode is selectively provided with a coating for reducing biological tissue rejection and improving corrosion resistance.

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