Temperature error detection method, apparatus, device, and storage medium

Abstract

A temperature error detection method, device and equipment of a temperature sensor based on a bandgap reference circuit and a storage medium. The temperature error detection method comprises: obtaining a temperature sensing circuit model parameter; obtaining a temperature coefficient simulation curve based on the temperature sensing circuit model parameter; obtaining a first parameter and a second parameter from the temperature coefficient simulation curve; obtaining a first-order standard curve based on the first parameter and the second parameter; and obtaining a temperature error based on the temperature coefficient simulation curve and the first-order standard curve. The temperature error detection method obtains a first-order standard curve based on a temperature coefficient simulation curve obtained by simulating a temperature sensing circuit, without the need for complex multi-order calculation, thereby reducing the calculation complexity, saving the calculation cost, and improving the calculation efficiency.

Description

Technical Field

[0001] Embodiments of this disclosure relate to a method, apparatus, device, and storage medium for detecting temperature errors. Background Technology

[0002] Temperature sensors are widely used in modern industry, medical fields, transportation, smart homes, and other areas. Integrated CMOS (Complementary Metal Oxide Semiconductor) temperature sensors are widely used in various system-on-chip (SoC) applications, industrial IoT, and wireless sensor networks. The circuitry of a temperature sensor may include a bandgap reference circuit. Because the bandgap reference circuit is insensitive to changes in external environmental factors, it can be used to reduce or prevent abnormal operation of the temperature sensor circuitry and ensure its reliability. Summary of the Invention

[0003] This disclosure provides at least one embodiment of a temperature error detection method for a temperature sensor based on a bandgap reference circuit. The temperature error detection method includes: acquiring parameters of the temperature sensing circuit model; obtaining a temperature coefficient simulation curve based on the temperature sensing circuit model parameters; obtaining a first parameter and a second parameter from the temperature coefficient simulation curve; obtaining a first-order standard curve based on the first parameter and the second parameter; and obtaining the temperature error based on the temperature coefficient simulation curve and the first-order standard curve.

[0004] For example, in a temperature error detection method provided in at least one embodiment of this disclosure, obtaining the first parameter and the second parameter from the temperature coefficient simulation curve includes: performing a first processing on the temperature coefficient simulation curve to obtain the first parameter; and performing a second processing on the temperature coefficient simulation curve to obtain the second parameter.

[0005] For example, in a temperature error detection method provided in at least one embodiment of this disclosure, the first processing of the temperature coefficient simulation curve to obtain the first parameter includes: taking the derivative of the temperature coefficient simulation curve to obtain the slope waveform of the temperature coefficient simulation curve; and performing a third processing on the slope waveform to obtain the first parameter.

[0006] For example, in a temperature error detection method provided in at least one embodiment of this disclosure, the third processing of the slope waveform to obtain the first parameter includes: obtaining a first threshold and a second threshold of the slope waveform; and calculating a weighted sum of the first threshold and the second threshold of the slope waveform to obtain the first parameter.

[0007] For example, in a temperature error detection method provided in at least one embodiment of this disclosure, the second processing of the temperature coefficient simulation curve to obtain the second parameter includes: obtaining a first intercept based on the first parameter and the temperature coefficient simulation curve; obtaining a second intercept based on the first parameter and the temperature coefficient simulation curve; and calculating a weighted sum of the first intercept and the second intercept to obtain the second parameter.

[0008] For example, in the temperature error detection method provided in at least one embodiment of this disclosure, obtaining the first intercept based on the first parameter and the temperature coefficient simulation curve includes: obtaining a first straight line tangent to the temperature coefficient simulation curve based on the first parameter and the temperature coefficient simulation curve; and obtaining the first intercept based on the intersection point of the first straight line and the vertical axis of the temperature coefficient simulation curve.

[0009] For example, in a temperature error detection method provided in at least one embodiment of this disclosure, obtaining a second intercept based on the first parameter and the temperature coefficient simulation curve includes: obtaining a first threshold and a second threshold of the temperature coefficient simulation curve; obtaining a second straight line intersecting the first threshold of the temperature coefficient simulation curve based on the first parameter and the first threshold of the temperature coefficient simulation curve; obtaining a third intercept based on the intersection of the second straight line and the vertical axis of the temperature coefficient simulation curve; obtaining a third straight line intersecting the second threshold of the temperature coefficient simulation curve based on the first parameter and the second threshold of the temperature coefficient simulation curve; obtaining a fourth intercept based on the intersection of the third straight line and the vertical axis of the temperature coefficient simulation curve; and comparing the third intercept and the fourth intercept to obtain the second intercept.

[0010] For example, in a temperature error detection method provided in at least one embodiment of this disclosure, the temperature coefficient simulation curve is a convex function, and the step of comparing the third intercept and the fourth intercept to obtain the second intercept includes: in response to the third intercept being less than the fourth intercept, the second intercept is the third intercept; in response to the fourth intercept being less than the third intercept, the second intercept is the fourth intercept.

[0011] For example, in a temperature error detection method provided in at least one embodiment of this disclosure, the temperature coefficient simulation curve is a concave function, and comparing the third intercept and the fourth intercept to obtain the second intercept includes: in response to the third intercept being greater than the fourth intercept, the second intercept is the third intercept; in response to the fourth intercept being greater than the third intercept, the second intercept is the fourth intercept. For example, in a temperature error detection method provided in at least one embodiment of this disclosure, obtaining the first parameter and the second parameter from the temperature coefficient simulation curve includes: measuring and obtaining the first temperature coefficient of the temperature sensing circuit; and obtaining a corrected second parameter based on the first parameter and the first temperature coefficient.

[0012] For example, in the temperature error detection method provided in at least one embodiment of this disclosure, obtaining the first parameter and the second parameter from the temperature coefficient simulation curve includes: measuring and obtaining a first temperature coefficient of the temperature sensing circuit and a second temperature coefficient different from the first temperature coefficient; and obtaining a corrected first parameter and a corrected second parameter based on the first temperature coefficient and the second temperature coefficient.

[0013] For example, in a temperature error detection method provided in at least one embodiment of this disclosure, obtaining the temperature error based on the temperature coefficient simulation curve and the first-order standard curve includes: reading a first temperature; obtaining a simulated temperature coefficient based on the first temperature and the temperature coefficient simulation curve; obtaining a first standard temperature coefficient based on the first temperature and the first-order standard curve; and obtaining the temperature error based on the simulated temperature coefficient, the first standard temperature coefficient, and the first parameter.

[0014] For example, in the temperature error detection method provided in at least one embodiment of this disclosure, obtaining the temperature coefficient simulation curve based on the temperature sensing circuit model parameters includes: obtaining a reference voltage and a positive temperature coefficient voltage based on the temperature sensing circuit model; performing at least one first simulation using the reference voltage and the positive temperature coefficient voltage to obtain at least one first temperature coefficient simulation curve; and obtaining the temperature coefficient simulation curve based on the at least one first temperature coefficient simulation curve.

[0015] For example, in a temperature error detection method provided in at least one embodiment of this disclosure, obtaining a reference voltage and a positive temperature coefficient voltage based on the temperature sensing circuit model includes: causing the temperature sensing circuit model to generate a positive temperature coefficient current and a corresponding first positive temperature coefficient voltage; causing the temperature sensing circuit model to generate the reference voltage based on the positive temperature coefficient current; and causing the temperature sensing circuit model to generate the positive temperature coefficient voltage scaled relative to the first positive temperature coefficient voltage based on the positive temperature coefficient current.

[0016] This disclosure provides at least one embodiment of a temperature error detection device based on a temperature sensor with a bandgap reference circuit. The temperature error detection device includes: an acquisition module configured to acquire parameters of a temperature sensing circuit model; a simulation module configured to obtain a temperature coefficient simulation curve based on the temperature sensing circuit model parameters; and a processing module configured to obtain a first parameter and a second parameter from the temperature coefficient simulation curve, obtain a first-order standard curve based on the first parameter and the second parameter, and obtain a temperature error based on the temperature coefficient simulation curve and the first-order standard curve.

[0017] For example, in the temperature error detection device provided in at least one embodiment of this disclosure, the processing module is further configured to perform a first processing on the temperature coefficient simulation curve to obtain the first parameter, and to perform a second processing on the temperature coefficient simulation curve to obtain the second parameter.

[0018] For example, at least one embodiment of the temperature error detection device provided in this disclosure further includes a measurement module configured to measure and obtain a first temperature coefficient of the temperature sensing circuit, and to measure and obtain a second temperature coefficient of the temperature sensing circuit that is different from the first temperature coefficient. The processing module is further configured to obtain a corrected second parameter based on the first parameter and the first temperature coefficient, or to obtain a corrected first parameter and a corrected second parameter based on the first temperature coefficient and the second temperature coefficient.

[0019] At least one embodiment of this disclosure also provides a temperature error detection device based on a temperature sensor with a bandgap reference circuit. The temperature error detection device includes: a processor; and a memory including one or more computer program modules; wherein the one or more computer program modules are stored in the memory and configured to be executed by the processor, and the one or more computer program modules include methods for implementing any embodiment of this disclosure.

[0020] At least one embodiment of this disclosure also provides a storage medium for storing non-transitory computer-readable instructions that, when executed by a computer, can implement the method provided in any embodiment of this disclosure. Attached Figure Description

[0021] To more clearly illustrate the technical solutions of the embodiments of this disclosure, the accompanying drawings of the embodiments will be briefly described below. Obviously, the drawings described below only relate to some embodiments of this disclosure, and are not intended to limit this disclosure.

[0022] Figure 1A A circuit diagram of an example circuit for generating a positive temperature coefficient voltage;

[0023] Figure 1BThis is a schematic diagram of the structure of a temperature sensor;

[0024] Figure 1C This is a graph showing the relationship between the temperature coefficient and temperature generated by a temperature sensing circuit.

[0025] Figure 2 A schematic diagram of a bandgap reference circuit provided for at least one embodiment of this disclosure;

[0026] Figure 3 An exemplary circuit diagram of a bandgap reference circuit provided in at least one embodiment of this disclosure;

[0027] Figure 4 A schematic diagram of a temperature sensing circuit provided in at least one embodiment of this disclosure;

[0028] Figure 5 An example temperature coefficient versus temperature graph generated by a temperature sensing circuit provided in at least one embodiment of this disclosure;

[0029] Figure 6 An exemplary flowchart of a temperature error detection method based on a bandgap reference circuit temperature sensor provided for at least one embodiment of this disclosure;

[0030] Figure 7 for Figure 6 An exemplary flowchart of an example of step S20;

[0031] Figure 8 for Figure 6 An exemplary flowchart of step S30;

[0032] Figure 9A for Figure 6 A schematic diagram of an example of steps S30 to S40;

[0033] Figure 9B for Figure 6 A schematic diagram of another example of steps S30 to S40;

[0034] Figure 10 for Figure 6 An exemplary flowchart of step S50;

[0035] Figure 11 for Figure 10 A schematic diagram of an example;

[0036] Figure 12 for Figure 6 Another exemplary flowchart of step S30;

[0037] Figure 13 for Figure 6 Another exemplary flowchart of step S30;

[0038] Figure 14 This is a schematic diagram illustrating an example of a temperature error detection method based on a bandgap reference circuit temperature sensor, provided in at least one embodiment of this disclosure.

[0039] Figure 15 This is a schematic diagram of another example of a temperature error detection method based on a bandgap reference circuit temperature sensor provided in at least one embodiment of the present disclosure;

[0040] Figure 16 A schematic block diagram of a temperature error detection device based on a bandgap reference circuit temperature sensor provided for at least one embodiment of this disclosure;

[0041] Figure 17 A schematic block diagram of a temperature error detection device based on a temperature sensor with a bandgap reference circuit, provided for at least one embodiment of this disclosure;

[0042] Figure 18 A schematic block diagram of a temperature error detection device based on a bandgap reference circuit temperature sensor, provided for at least one embodiment of this disclosure; and

[0043] Figure 19 This is a schematic diagram of a storage medium provided for at least one embodiment of the present disclosure. Detailed Implementation

[0044] To make the objectives, technical solutions, and advantages of the embodiments of this disclosure clearer, the technical solutions of the embodiments of this disclosure will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this disclosure. All other embodiments obtained by those skilled in the art based on the described embodiments of this disclosure without creative effort are within the scope of protection of this disclosure.

[0045] Unless otherwise defined, the technical or scientific terms used in this disclosure shall have the ordinary meaning understood by one of ordinary skill in the art to which this disclosure pertains. The terms “first,” “second,” and similar terms used in this disclosure do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Similarly, the terms “an,” “a,” or “the,” and similar terms do not indicate a quantity limitation, but rather indicate the presence of at least one. The terms “including,” “comprising,” or “containing,” and similar terms mean that the element or object preceding the word encompasses the elements or objects listed following the word and their equivalents, without excluding other elements or objects. The terms “connected,” “linked,” or similar terms are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. The terms “upper,” “lower,” “left,” and “right,” etc., are used only to indicate relative positional relationships, and these relative positional relationships may change accordingly when the absolute position of the described objects changes.

[0046] The present disclosure will now be described through several specific embodiments. To keep the following description of the embodiments of the present disclosure clear and concise, detailed descriptions of known functions and components may be omitted. When any component of the embodiments of the present disclosure appears in more than one drawing, the component is represented by the same or similar reference numerals in each drawing.

[0047] Temperature sensor circuitry can operate based on a reference voltage provided by an external power supply or any other circuitry, which is typically unchanging relative to external factors such as temperature. For example, temperature sensor circuitry may include a bandgap reference circuit. A bandgap reference circuit, also known as a bandgap reference source, provides a reference voltage that is insensitive to changes in the process corner-supply voltage-temperature (PVT) and a positive temperature coefficient voltage that is positively correlated with temperature.

[0048] Generally, the base-emitter voltage (V) of a bipolar transistor (transistor) is... BE It has a negative temperature coefficient. However, when two transistors with different gains operate at proportional current densities (e.g., multiples of each other), the difference between their respective base-emitter voltages (ΔV) will increase. BE It will have a positive temperature coefficient and will vary in a positive direction with absolute temperature.

[0049] Figure 1A This is a circuit diagram of an example circuit for generating a positive temperature coefficient voltage. Figure 1A As shown, circuit 10 includes bipolar transistors Q1 and Q2. In some examples, bipolar transistor Q2 can be implemented by multiple bipolar transistors connected in parallel. When the current density of bipolar transistor Q1 is I... sThe current density of bipolar transistor Q2 is nI s When n is a constant, the difference ΔV between their base-emitter voltages BE It can be expressed by the following formula (1):

[0050]

[0051] Among them, V BE and V BE2 These are the base-emitter voltages of bipolar transistors Q1 and Q2, respectively; the thermal voltage V. T = kT / q (where k is Boltzmann's constant, q is the electron charge, and T is the thermodynamic temperature); n is the ratio of the gain of transistor Q2 to the gain of transistor Q1. Therefore, the difference ΔV between the base-emitter voltages of bipolar transistors Q1 and Q2 is... BE It can have a positive relationship with temperature, that is, it has a positive temperature coefficient.

[0052] By using the voltage with a positive temperature coefficient (e.g., the difference ΔV between the base-emitter voltages of bipolar transistors Q1 and Q2) BE The positive and negative temperature coefficients are added together with an appropriate weight / coefficient (α) to a voltage with a negative temperature coefficient (e.g., the base-emitter voltage of bipolar transistor Q1), and the positive and negative temperature coefficients can cancel each other out, thus obtaining a temperature-insensitive reference voltage.

[0053] Figure 1B This is a schematic diagram of the structure of a temperature sensor. For example, such as... Figure 1B As shown, the temperature sensor includes a bandgap reference circuit, an analog-to-digital converter (ADC), and a scaling circuit. For example, in the bandgap reference circuit, currents I1, pI1, and I2 are injected into the bipolar transistor rA, respectively. E A E And the emitter of A2, bipolar transistor rA E A E Negative temperature coefficient voltages V will be generated on A2 and A2 respectively. BE1 V' BE1 and V BE2 V BE1 and V' BE1 The difference ΔV BE It is a voltage with a positive temperature coefficient. Passing this positive temperature coefficient voltage through an operational amplifier, we obtain α times ΔV. BE Positive temperature coefficient voltage V PTAT V PTAT It can be expressed by the following formula (2):

[0054] V PTAT =αΔVBE (2)

[0055] For example, the negative temperature coefficient voltage V generated on bipolar transistor A2 BE2 With positive temperature coefficient voltage V PTAT By combining these parameters, a reference voltage V that is less sensitive to temperature can be obtained. REF For example, V REF It can be expressed by the following formula (3):

[0056] V REF =V BE2 +αΔV BE (3)

[0057] For example, the reference voltage V generated by the bandgap reference circuit REF and positive temperature coefficient voltage V PTAT By inputting this into a properly designed ADC, a temperature coefficient μ that varies positively with absolute temperature can be obtained. Combining equations (2) and (3), the temperature coefficient μ can be expressed by the following equation (4):

[0058]

[0059] Then, by linearizing μ, the Celsius temperature value can be obtained, as shown in formula (5) below:

[0060] T out =Aμ+B (5)

[0061] For example, the temperature coefficient μ is subjected to, for example Figure 1B The scaling and other processes shown can be used to obtain the desired output value Dout (e.g., the Celsius temperature value Tout).

[0062] Figure 1C This is a graph showing the relationship between the temperature coefficient and temperature generated by a temperature sensing circuit. For example, ... Figure 1C As shown, Figure 1C The horizontal axis represents the temperature value in Celsius (T), and the vertical axis represents, for example... Figure 1B The temperature coefficient μ generated by the circuit of the temperature sensor in the medium architecture, for example, corresponding to the above formula (5), when μ takes a value in the range of 0 to 1, the corresponding temperature range is about 0K to 600K. Therefore, to obtain the Celsius temperature value, A≈600℃ / k and B≈-273℃ are required. At this time, the value of μ cannot be well matched with the input dynamic range of the ADC.

[0063] like Figure 1C As shown, this temperature coefficient μ is proportional to the Celsius temperature value T. For example, the reference voltage (V) REF A typical value of 1.2V is used; the base-emitter voltage of the transistor (V) BEThe temperature coefficient is typically taken as -1.5 mV / ℃. In this case, such as Figure 1C As shown, the temperature coefficient μ is approximately 0.39 when the Celsius temperature T is -40℃, and approximately 0.66 when the Celsius temperature T is 125℃. However, ideally, it is desirable that the dynamic range of the temperature coefficient μ should linearly change from 0 to 1 as the Celsius temperature changes linearly from -40℃ to 125℃. Therefore, as... Figure 1C As shown, in, for example Figure 1B In temperature sensors, the temperature coefficient μ is used as the input to the next stage module (e.g., scaling module) of the ADC, and less than 30% of the dynamic range is used, thus directly losing the effective number of bits of the ADC and limiting the measurement accuracy.

[0064] Figure 2 A schematic diagram of a bandgap reference circuit provided for at least one embodiment of this disclosure.

[0065] For example, such as Figure 2 As shown, the bandgap reference circuit 100 includes a positive temperature coefficient current generation module 110, a reference voltage generation module 120, and a positive temperature coefficient voltage scaling module 130.

[0066] The positive temperature coefficient current generation module 110 is configured to generate a positive temperature coefficient current and a corresponding first positive temperature coefficient voltage. For example, the positive temperature coefficient current is a current proportional to absolute temperature (PTAT), and the first positive temperature coefficient voltage is a voltage positively correlated with temperature.

[0067] The reference voltage generation module 120 is configured to generate a reference voltage based on the aforementioned positive temperature coefficient current. For example, the reference voltage generation module 120 can generate a reference voltage that is insensitive to absolute temperature based on the aforementioned positive temperature coefficient current and the negative temperature coefficient voltage generated by the internal transistor.

[0068] The positive temperature coefficient voltage scaling module 130 is configured to generate a second positive temperature coefficient voltage based on the aforementioned positive temperature coefficient current, which is scaled relative to the first positive temperature coefficient voltage. For example, the second positive temperature coefficient voltage is a voltage that is amplified from the first positive temperature coefficient voltage and is positively correlated with temperature.

[0069] Figure 3 An exemplary circuit diagram of a bandgap reference circuit provided for at least one embodiment of this disclosure.

[0070] For example, such as Figure 3 As shown, the bandgap reference circuit 100 includes a positive temperature coefficient current generation module 110, a reference voltage generation module 120, and a positive temperature coefficient voltage scaling module 130.

[0071] For example, the positive temperature coefficient current generating module 100 includes a first transistor Q1, a second transistor Q2, and a first resistor R1. The emitter of the first transistor Q1 is electrically connected to a first node N1, and the base and collector of the first transistor Q1 are connected to a first common voltage, for example, electrically connected to a first common voltage terminal, such as ground (GND). The base and collector of the second transistor Q2 are also connected to the first common voltage (GND), for example, electrically connected to a first common voltage terminal. The first end of the first resistor R1 is electrically connected to a second node N2, and the second end of the first resistor R1 is electrically connected to the emitter of the second transistor Q2.

[0072] For example, in such Figure 3 In the illustrated embodiment, both the first transistor Q1 and the second transistor Q2 are PNP transistors; alternatively, the first transistor Q1 and the second transistor Q2 may also be NPN transistors, and the embodiments disclosed herein do not impose any restrictions on this.

[0073] For example, such as Figure 3 As shown, the positive temperature coefficient current generating module 100 may further include a clamping circuit submodule 110. The clamping circuit submodule 110 is connected to a second common voltage, for example, electrically connected to the second common voltage terminal (V). dd Furthermore, the clamping circuit submodule 110 is also electrically connected to the first node N1 and the second node N2. The second common voltage terminal is configured to receive a second common voltage, such as the power supply voltage V. dd The clamping circuit submodule 110 adjusts the potentials of the first node N1 and the second node N2 relative to the first common voltage (GND) to be equal.

[0074] For example, the clamping circuit submodule 110 can be implemented in various ways. In the illustrated example, the clamping circuit submodule 110 includes a first switching transistor M1, a second switching transistor M2, and a comparator circuit. The first input terminal (-) of the comparator circuit is electrically connected to the first node N1, the second input terminal (+) of the comparator circuit is electrically connected to the second node N2, and the output terminal of the comparator circuit is electrically connected to the fifth node N5. The first switching transistor M1 is electrically connected to the second common voltage terminal (V). dd The second switching transistor M2 is electrically connected between the first node N1 and the second common voltage terminal (V). dd Between the first switching transistor M1 and the second node N2. The gates of the first switching transistor M1 and the second switching transistor M1 are directly electrically connected and electrically connected to the fifth node N5.

[0075] For example, the comparator circuit compares the levels of two input voltages at the first input terminal (-) and the second input terminal (+), thereby changing the output voltage at the output terminal. This output voltage can control the states of the first switching transistor M1 and the second switching transistor M2, such as controlling their on / off states, thereby controlling the voltages of the first node N1 and the second node N2. Therefore, the first switching transistor M1, the second switching transistor M2, and the comparator circuit constitute a negative feedback circuit, adjusting the potentials of the first node N1 and the second node N2 relative to the first common voltage (GND) to be equal. For example, the comparator circuit can be, for example... Figure 3 The operational amplifier in the embodiment can also be other electronic components capable of voltage clamping, and the embodiments disclosed herein are not limited thereto.

[0076] For example, the base-emitter voltage V of the first transistor Q1 BE1 The base-emitter voltage V of the second transistor Q2 BE2 They each have a negative temperature coefficient. For example, transistor Q1 and transistor Q2 have different gains and operate at proportional current densities, V BE1 and V BE2 The difference ΔV BE The voltage ΔV, which has a positive temperature coefficient, is positively correlated with absolute temperature. BE Since the potentials of the first node N1 and the second node N2 relative to the first common voltage (GND) are set to be equal, the voltage across the first resistor R1 is V. BE1 and V BE2 The difference, i.e., the voltage ΔV with the first positive temperature coefficient. BE Therefore, a positive temperature coefficient current I is generated across the first resistor R1. ptat I ptat It can be expressed by the following formula (6):

[0077] I ptat =ΔV BE / R1 (6)

[0078] For example, such as Figure 3 As shown, the reference voltage generation module 120 includes a first mirror circuit module 121 and a first voltage generation module 122. The first mirror circuit module 121 is configured to replicate the positive temperature coefficient current I at a first ratio. ptat The first replicated current I1 is obtained. The first voltage generation module 122 is configured to generate a reference voltage V based on the first replicated current I1. ref .

[0079] For example, the first mirror circuit module 121 can be implemented in multiple ways, such as Figure 3In the example shown, the first mirror circuit module 121 includes a third switching transistor M3, which can be used for current replication, such as mirror replication. The gate of the third switching transistor M3 is electrically connected to the fifth node N5, and the third switching transistor M3 is electrically connected to the second common voltage terminal (V). dd Between the third node N3 and the third node N3.

[0080] For example, since the gates of the third switching transistor M3 and the second switching transistor M2 are electrically connected through the fifth node N5, the state of the third switching transistor M3 is also controlled by the voltage of the fifth node N5 (i.e., the output voltage of the comparator circuit). The third switching transistor M3 can replicate the positive temperature coefficient current I on the second switching transistor M2 at a first ratio. ptat The first replicated current I1 is obtained. For example, the first ratio depends on the width-to-length ratio of the third switching transistor M3 and the second switching transistor M2. For example, when the width-to-length ratio of the third switching transistor M3 and the second switching transistor M2 is the same, the first ratio is 1, that is, I1 = I ptat .

[0081] For example, such as Figure 3 As shown, the first voltage generation module 122 includes a second resistor R2 and a third transistor Q3. The first end of the second resistor R2 is electrically connected to the third node N3, and the second end of the second resistor R2 is electrically connected to the emitter of the third transistor Q3. The base and collector of the third transistor Q3 are connected to a first common voltage (GND). For example, the third transistor Q3 is of the same type as the first transistor Q1, such as... Figure 3 All transistors shown are PNP transistors, or they may all be NPN transistors; the embodiments disclosed herein are not limited to this.

[0082] For example, a first replicating current I1 that varies positively with temperature flows through a second resistor R2, generating a voltage ΔV' across the second resistor R2 that also varies positively with temperature. BE ,ΔV' BE = I1 × R2. Because the base-emitter voltage V of the third transistor Q3... BE3 It has a negative temperature coefficient, and a reference voltage V is generated at the third node N3 that is insensitive to absolute temperature. ref For example, when the first ratio is 1, I1 = I ptat Combining with formula (6), V ref It can be expressed by the following formula (7):

[0083] V ref =V BE3 +ΔV B ′ E =V BE3 +I ptat ×R2=V BE+ΔV BE ×R2 / R1 (7)

[0084] For example, such as Figure 3 As shown, the positive temperature coefficient voltage scaling module 130 includes a second mirror circuit module 131 and a second voltage generation module 132. The second mirror circuit module 131 is configured to replicate the positive temperature coefficient current I at a second ratio. ptat The second replicated current I2 is obtained. The second voltage generation module 132 is configured to generate a voltage ΔV relative to the first positive temperature coefficient based on the second replicated current I2. BE The scaled second positive temperature coefficient voltage V_PTAT.

[0085] For example, such as Figure 3 As shown, the second mirror circuit module 131 includes a fourth switching transistor M4, which can be used for current replication, such as mirror replication. The gate of the fourth switching transistor M4 is electrically connected to the fifth node N5, and the fourth switching transistor M4 is electrically connected to the second common voltage terminal (V). dd Between node N1 and node N4, the positive temperature coefficient current is replicated at a second ratio to obtain a second replicated current.

[0086] For example, since the gate of the fourth switching transistor M4 and the gate of the second switching transistor M2 are electrically connected through the fifth node N5, the state of the fourth switching transistor M4 is also controlled by the voltage of the fifth node N5 (i.e., the output voltage of the comparator circuit). The fourth switching transistor M4 can replicate the positive temperature coefficient current I on the second switching transistor M2 at a second ratio. ptat The second replicated current I2 is obtained. For example, the second ratio depends on the width-to-length ratio of the fourth switching transistor M4 and the second switching transistor M2. For example, when the width-to-length ratio of the fourth switching transistor M4 and the second switching transistor M2 is the same, the second ratio is 1, that is, I2 = I. ptat .

[0087] For example, such as Figure 3 As shown, the second voltage generating module 132 includes a third resistor R3. The first end of the third resistor R3 is electrically connected to the fourth node N4, and the second end of the third resistor R3 is connected to the first common voltage (GND).

[0088] For example, a second replicating current I2, which is positively correlated with temperature, flows through a third resistor R3, generating a second positive temperature coefficient voltage V_PTAT = I2 × R3 across R3, which is also positively correlated with temperature. For example, when the second ratio is 1, I2 = I ptat Combining formula (6), V_PTAT can be expressed by the following formula (8):

[0089]

[0090] For example, when R3 is greater than R1, the second positive temperature coefficient voltage V_PTAT is equivalent to the first positive temperature coefficient voltage ΔV. BE Multiplying by a coefficient greater than 1 achieves the effect of the first positive temperature coefficient voltage ΔV. BE The voltage is amplified; conversely, if necessary, when R3 is less than R1, the second positive temperature coefficient voltage V_PTAT is equivalent to amplifying the first positive temperature coefficient voltage ΔV. BE Multiplying by a coefficient less than 1 achieves the effect of the first positive temperature coefficient voltage ΔV. BE The reduction is significant. Furthermore, in this circuit, the resistance value of R3 is selectable and not limited by other factors. Additionally, the second positive temperature coefficient voltage V_PTAT generated across the third resistor R3, which varies positively with temperature, can be further processed, for example, by amplification through an amplifier circuit.

[0091] Figure 4 This is a schematic diagram of a temperature sensing circuit provided for at least one embodiment of the present disclosure.

[0092] For example, such as Figure 4 As shown, the temperature sensing circuit 200 includes, for example... Figure 2 or Figure 3 The bandgap reference circuit 100 and the calculation module 210 are shown. For example... Figure 3 In this embodiment, the bandgap reference circuit 100 outputs a reference voltage V that is insensitive to temperature changes. ref and relative to the positive temperature coefficient voltage ΔV BE The amplified second positive temperature coefficient voltage V_PTAT. Calculation module 210 is configured to receive the reference voltage V. ref The second positive temperature coefficient voltage V_PTAT, based on the reference voltage V ref The second positive temperature coefficient voltage V_PTAT outputs the sensing results related to the measured temperature T.

[0093] For example, the calculation module 210 can be an ADC. The sensing result output by the ADC, which is related to the measured temperature T, can be a temperature coefficient μ that is positively correlated with the absolute temperature. For example, combining formulas (4), (6), (7), and (8), the temperature coefficient μ can be expressed by the following formula (9):

[0094]

[0095] Figure 5 An example temperature coefficient versus temperature graph generated by a temperature sensing circuit provided in at least one embodiment of this disclosure.

[0096] For example, such as Figure 5 As shown, Figure 5 The horizontal axis represents the temperature value in Celsius (T), and the vertical axis represents the temperature coefficient (μ). A traditional curve is shown below. Figure 1C The curve showing the relationship between the temperature coefficient μ and the Celsius temperature T, with an expanded range, is as follows: Figure 4 The temperature coefficient μ generated by the medium-temperature sensing circuit is plotted against the Celsius temperature T. For example, a typical reference voltage of 1.2V is used, and the temperature coefficient of the transistor's base-emitter voltage is typically -1.5mV / ℃. In this case, such as... Figure 5 As shown, when the Celsius temperature changes linearly from -40℃ to 125℃, the dynamic range of the temperature coefficient μ of the traditional curve is less than 30% compared to the ideal dynamic range of the temperature coefficient μ∈[0,1]. The dynamic range of the temperature coefficient μ of the expanded curve is expanded to 40%.

[0097] In at least one embodiment of this disclosure, by means of... Figure 4 The temperature sensing circuit shown can be used to obtain a temperature sensing circuit model for PVT simulation. Performing PVT simulation on this temperature sensing circuit model yields a simulated curve of the relationship between voltage V (e.g., voltage V corresponds to the temperature coefficient μ and is positively correlated with absolute temperature) and temperature T. Comparing this simulated curve with a standard curve (e.g., ideally a standard curve with zero temperature error) reveals the temperature error of the simulated curve over the entire temperature range (e.g., -40 to 125°C). Therefore, by selecting the most suitable standard curve, the temperature error over the entire PVT range can be minimized.

[0098] For example, transistors (such as BJTs) are subject to various non-ideal factors, resulting in significant non-linear errors in the voltage they generate. Therefore, to obtain the most suitable standard curve, multi-order formula calculations are usually required, which increases computational complexity and reduces computational efficiency.

[0099] This disclosure provides at least one embodiment of a temperature error detection method for a temperature sensor based on a bandgap reference circuit. The temperature error detection method includes: acquiring temperature sensing circuit model parameters; obtaining a temperature coefficient simulation curve based on the temperature sensing circuit model parameters; obtaining a first parameter and a second parameter from the temperature coefficient simulation curve; obtaining a first-order standard curve based on the first and second parameters; and obtaining the temperature error based on the temperature coefficient simulation curve and the first-order standard curve.

[0100] Several embodiments of this disclosure also provide an apparatus, device, or storage medium corresponding to performing the above-described temperature error detection method.

[0101] The temperature error detection method, apparatus, device, and storage medium provided in at least one embodiment of this disclosure obtain a first-order standard curve based on the temperature coefficient simulation curve obtained by simulating the temperature sensing circuit. This eliminates the need for complex multi-order calculations and allows for the calculation of temperature errors using a linearized method, thereby reducing computational complexity, saving computational costs, and improving computational efficiency.

[0102] At least one embodiment of the present disclosure will now be described in detail with reference to the accompanying drawings. It should be noted that the same reference numerals will be used to refer to the same elements described in different drawings.

[0103] Figure 6 This is an exemplary flowchart of a temperature error detection method based on a bandgap reference circuit temperature sensor, provided for at least one embodiment of the present disclosure.

[0104] For example, such as Figure 6 As shown, the temperature error detection method provided in at least one embodiment of this disclosure is based on, for example... Figure 2 or Figure 3 The temperature sensor shown is a bandgap reference circuit. For example, this temperature error detection method includes the following steps S10 to S50.

[0105] Step S10: Obtain the parameters of the temperature sensing circuit model;

[0106] Step S20: Obtain the temperature coefficient simulation curve based on the temperature sensing circuit model parameters;

[0107] Step S30: Obtain the first and second parameters from the temperature coefficient simulation curve;

[0108] Step S40: Obtain the first-order standard curve based on the first and second parameters;

[0109] Step S50: Obtain the temperature error based on the temperature coefficient simulation curve and the first-order standard curve.

[0110] For example, in step S10, by, for example Figure 4 The temperature sensing circuit shown acquires temperature sensing circuit model parameters, which include, for example... Figure 2 or Figure 3 The bandgap reference circuit shown.

[0111] For example, in step S20, a temperature sensing circuit model is established based on the obtained temperature sensing circuit model parameters to perform one or more PVT simulations, thereby obtaining a temperature coefficient simulation curve. For example, the temperature coefficient simulation curve can be a simulation curve of the relationship between voltage V (e.g., the voltage V corresponds to the temperature coefficient μ and is positively correlated with the absolute temperature) and temperature T.

[0112] For example, in step S30, a first parameter and a second parameter are obtained from the temperature coefficient simulation curve, so that a first-order standard curve is obtained in step S40 based on the first parameter and the second parameter. For example, the first parameter and the second parameter can be the slope and intercept of the first-order standard curve, respectively, or they can be other parameters that can obtain a first-order standard curve. The embodiments of this disclosure are not limited in this regard.

[0113] For example, in step S50, the temperature error is obtained based on the temperature coefficient simulation curve and the first-order standard curve. By comparing the temperature coefficient simulation curve with the first-order standard curve, the temperature error of the temperature coefficient simulation curve over the entire target temperature range (e.g., -40 to 125°C) can be obtained.

[0114] Figure 7 for Figure 6 An exemplary flowchart of an example of step S20.

[0115] For example, based on the temperature sensing circuit model parameters obtained in step S10, a simulated temperature coefficient curve can be obtained. For example, as... Figure 7 As shown, Figure 6 Step S20 in the temperature error detection method shown includes the following steps S210 to S230.

[0116] Step S210: Obtain the reference voltage and positive temperature coefficient voltage based on the temperature sensing circuit model;

[0117] Step S220: Perform at least one first simulation using the reference voltage and the positive temperature coefficient voltage to obtain at least one first temperature coefficient simulation curve;

[0118] Step S230: Obtain a temperature coefficient simulation curve based on at least one first temperature coefficient simulation curve.

[0119] For example, through, for example Figure 4 The temperature sensing circuit shown can be used to obtain a temperature sensing circuit model for PVT simulation. In step S210, a reference voltage and a positive temperature coefficient voltage can be obtained based on this temperature sensing circuit model. For example, the reference voltage can be, for example... Figure 3 The reference voltage V output by the mid-bandgap reference circuit is insensitive to temperature changes. ref Positive temperature coefficient voltage can be, for example... Figure 3 The voltage ΔV output by the mid-bandgap reference circuit relative to the positive temperature coefficient BE The amplified second positive temperature coefficient voltage V_PTAT.

[0120] For example, in step S220, the reference voltage V is used. refPerform at least one first simulation with the positive temperature coefficient voltage V_PTAT to obtain at least one first temperature coefficient simulation curve. For example, the first temperature coefficient simulation curve can be a simulation curve of the relationship between voltage V and temperature T. For example, according to formula (9), the voltage V corresponds to the temperature coefficient μ and has a positive relationship with the absolute temperature.

[0121] For example, in step S230, at least one first temperature coefficient simulation curve is averaged to obtain a temperature coefficient simulation curve. For example, this temperature coefficient simulation curve is a simulation curve showing the relationship between voltage V and temperature T, where voltage V corresponds to the temperature coefficient μ and has a positive correlation with temperature T. For example, this temperature coefficient simulation curve can be a convex function or a concave function; ideally, it can be a straight line with a slope greater than 0. For example, in this temperature coefficient simulation curve, the temperature T ranges from -40 to 125°C.

[0122] Figure 8 for Figure 6 An exemplary flowchart of an example of step S30.

[0123] For example, based on Figure 6 The temperature coefficient simulation curve obtained in step S20 can yield the first and second parameters, which are used to obtain the first-order standard curve in step S40. For example, as... Figure 8 As shown, Figure 6 Step S30 in the temperature error detection method shown includes the following steps S310 to S320.

[0124] Step S310: Perform a first processing on the temperature coefficient simulation curve to obtain the first parameter;

[0125] Step S320: Perform a second processing on the temperature coefficient simulation curve to obtain the second parameter.

[0126] For example, the first parameter is, for example, the slope of the first-order standard curve, and the second parameter is, for example, the intercept of the first-order standard curve. For example, this first-order standard curve is obtained through step S40 and is used to compare with the temperature coefficient simulation curve to obtain the temperature error.

[0127] For example, in step S310, for example... Figure 7 The process of obtaining the first parameter by first processing the temperature coefficient simulation curve obtained in steps S210 to S230 includes: taking the derivative of the temperature coefficient simulation curve to obtain the slope waveform of the temperature coefficient simulation curve; and performing a third processing on the slope waveform to obtain the first parameter.

[0128] For example, performing a third process on the slope waveform to obtain the first parameter includes: obtaining a first threshold and a second threshold of the slope waveform; for example, calculating the average of the first threshold and the second threshold of the slope waveform to obtain the first parameter. For example, the first threshold can be the maximum value k of the slope waveform. max The second threshold can be the minimum value k of the slope waveform. min At this point, the first parameter is the maximum value k of the slope waveform. max and minimum value k min The average value k, the first parameter k can be expressed by the following formula (10):

[0129]

[0130] In the above embodiments of this disclosure, the first parameter is not limited to the maximum value k of the slope waveform. max and minimum value k min The average value k, for example, can also be the maximum value k. max and minimum value k min Other weighted sums (the average corresponds to each weight being equal to 1 / 2).

[0131] For example, in step S320, for example... Figure 7 The second processing of the temperature coefficient simulation curves obtained in steps S210 to S230 to obtain the second parameter includes: obtaining the first intercept based on the first parameter and the temperature coefficient simulation curve; obtaining the second intercept based on the first parameter and the temperature coefficient simulation curve; and calculating the average of the first intercept and the second intercept to obtain the second parameter.

[0132] For example, when the temperature coefficient simulation curve is a convex function, the first intercept can be the maximum intercept b obtained based on the first parameter and the temperature coefficient simulation curve. max The second intercept can be the minimum intercept b obtained based on the simulation curve using the first parameter and the temperature coefficient. min When the temperature coefficient simulation curve is a concave function, the first intercept can be the minimum intercept b obtained based on the first parameter and the temperature coefficient simulation curve. min The second intercept can be the maximum intercept b obtained based on the simulation curve using the first parameter and the temperature coefficient. max For example, the second parameter can be the maximum intercept b. max and minimum intercept b min The average value b, and the second parameter b can be expressed by the following formula (11):

[0133]

[0134] In the above embodiments of this disclosure, the second parameter is not limited to the maximum intercept b. max and minimum intercept b minThe average value b, for example, can also be the maximum value k. max and minimum value k min Other weighted sums (the average corresponds to each weight being equal to 1 / 2).

[0135] For example, in step S40, the first-order standard curve obtained based on the first parameter and the second parameter can be represented by the following formula (12):

[0136] V′(T)=kT+b (12)

[0137] For example, when the ratio of voltage V′(T) to its corresponding temperature coefficient μ is 1, the temperature T can be obtained by combining formulas (5) and (12), and can be expressed by the following formula (13):

[0138]

[0139] Figure 9A for Figure 6 A schematic diagram of an example of steps S30 to S40.

[0140] For example, such as Figure 9A As shown, by, for example Figure 7 The temperature coefficient simulation curves obtained in steps S210 to S230 are convex functions. For example, in order to achieve this, for example... Figure 8 In step S310, the first parameter is obtained, and the derivative of the temperature coefficient simulation curve can be taken to obtain the slope waveform of the temperature coefficient simulation curve; the maximum value k of the slope waveform is then obtained. max and minimum value k min Combined with formula (10), the maximum value k of the slope waveform is obtained. max and minimum value k min To obtain the first parameter k.

[0141] For example, in order to pass through, for example Figure 8 In step S320, the second parameter is obtained by simulating the first parameter and the temperature coefficient curve to obtain the first intercept b1 and the second intercept b2, and then calculating the average of the first intercept b1 and the second intercept b2 to obtain the second parameter b.

[0142] For example, such as Figure 9A As shown, to obtain the first intercept b1, a first straight line tangent to the temperature coefficient simulation curve can be obtained based on the first parameter k and the temperature coefficient simulation curve; the first intercept b1 can be obtained based on the intersection point of the first straight line and the vertical axis of the temperature coefficient simulation curve. Since... Figure 9A The temperature coefficient simulation curve shown is a convex function, with the first intercept b1 being the maximum intercept b. max .

[0143] For example, such as Figure 9AAs shown, to obtain the second intercept b2, a first threshold and a second threshold of the temperature coefficient simulation curve can first be obtained. For example, the first threshold is the highest point of the temperature coefficient simulation curve (e.g., Figure 9A N1 in the equation), the second threshold is the lowest point of the temperature coefficient simulation curve (e.g., N1), and the second threshold is the lowest point of the temperature coefficient simulation curve (e.g., N1). Figure 9A (N2 in the text). For example, such as... Figure 9A As shown, based on the first parameter k and the first threshold N1, a second straight line intersecting the first threshold N1 can be obtained; that is, the slope of the second straight line is k and the second straight line passes through N1. The third intercept b3 can be obtained based on the intersection point of the second straight line and the vertical axis of the temperature coefficient simulation curve. For example, as... Figure 9A As shown, based on the first parameter k and the second threshold N2, a third straight line intersecting with the second threshold N2 can be obtained. That is, the slope of the third straight line is k and the third straight line passes through N2. Based on the intersection of the third straight line and the vertical axis of the temperature coefficient simulation curve, the fourth intercept b4 can be obtained.

[0144] For example, the second intercept b2 can be obtained by comparing the third intercept b3 and the fourth intercept b4. For instance, when the temperature coefficient simulation curve is a convex function, in response to the third intercept b3 being less than the fourth intercept b4, the second intercept b2 is the third intercept b3; in response to the fourth intercept b4 being less than the third intercept b3, the second intercept b2 is the fourth intercept b4. For example, as... Figure 9A As shown, the fourth intercept b4 is less than the third intercept b3, meaning the second intercept b2 is the fourth intercept b4. This second intercept b2 is also the minimum intercept b obtained based on the simulation curve using the first parameter and the temperature coefficient. min .

[0145] For example, the average of the first intercept b1 and the second intercept b2 obtained by combining formula (11) is the second parameter b. For example, in step S40, by combining formula (12), based on the first parameter k and the second parameter b, a first-order standard curve with a slope of k and an intercept of b can be obtained.

[0146] Figure 9B for Figure 6 A schematic diagram of another example of steps S30 to S40.

[0147] For example, such as Figure 9B As shown, by, for example Figure 7 The temperature coefficient simulation curves obtained in steps S210 to S230 are concave functions. For example, in order to achieve this, for example... Figure 8 In step S310, the first parameter is obtained, and the derivative of the temperature coefficient simulation curve can be taken to obtain the slope waveform of the temperature coefficient simulation curve; the maximum value k of the slope waveform is then obtained. max and minimum value k min Combined with formula (10), the maximum value k of the slope waveform is obtained.max and minimum value k min To obtain the first parameter k.

[0148] For example, in order to pass through, for example Figure 8 In step S320, the second parameter is obtained. The first intercept b1 and the second intercept b2 can be obtained based on the first parameter and the temperature coefficient simulation curve. Then, the average value of the first intercept b1 and the second intercept b2 is calculated to obtain the second parameter b.

[0149] For example, such as Figure 9B As shown, to obtain the first intercept b1, a first straight line tangent to the temperature coefficient simulation curve can be obtained based on the first parameter k and the temperature coefficient simulation curve; the first intercept b1 can be obtained based on the intersection point of the first straight line and the vertical axis of the temperature coefficient simulation curve. Since... Figure 9A The temperature coefficient simulation curve shown is a concave function, with the first intercept b1 being the minimum intercept b. min .

[0150] For example, such as Figure 9B As shown, to obtain the second intercept b2, a first threshold and a second threshold of the temperature coefficient simulation curve can first be obtained. For example, the first threshold is the highest point of the temperature coefficient simulation curve (e.g., Figure 9B In the N1'), the second threshold is the lowest point of the temperature coefficient simulation curve (e.g., N1'). Figure 9B (N2' in the text). For example, as... Figure 9B As shown, based on the first parameter k and the first threshold N1', a second straight line intersecting the first threshold N1' can be obtained; that is, the slope of the second straight line is k and the second straight line passes through N1'. The third intercept b3 can be obtained based on the intersection point of the second straight line and the vertical axis of the temperature coefficient simulation curve. For example, as... Figure 9B As shown, based on the first parameter k and the second threshold N2', a third straight line intersecting the second threshold N2' can be obtained, that is, the slope of the third straight line is k and the third straight line passes through N2'; based on the intersection of the third straight line and the vertical axis of the temperature coefficient simulation curve, the fourth intercept b4 can be obtained.

[0151] For example, the second intercept b2 can be obtained by comparing the third intercept b3 and the fourth intercept b4. For instance, when the temperature coefficient simulation curve is a concave function, in response to the third intercept b3 being greater than the fourth intercept b4, the second intercept b2 is the third intercept b3; in response to the fourth intercept b4 being greater than the third intercept b3, the second intercept b2 is the fourth intercept b4. For example, as... Figure 9B As shown, the third intercept b3 is greater than the fourth intercept b4, meaning the second intercept b2 is the same as the third intercept b3. This second intercept b2 is also the maximum intercept b obtained based on the simulation curve using the first parameter and the temperature coefficient. max .

[0152] For example, the average of the first intercept b1 and the second intercept b2 obtained by combining formula (11) is the second parameter b. For example, in step S40, by combining formula (12), based on the first parameter k and the second parameter b, a first-order standard curve with a slope of k and an intercept of b can be obtained.

[0153] Figure 10 for Figure 6 An exemplary flowchart of step S50; Figure 11 for Figure 10 A schematic diagram of an example.

[0154] For example, based on Figure 6 The temperature coefficient simulation curve obtained in step S20 and the first-order standard curve obtained in step S40 can be used to obtain the temperature error. For example, as... Figure 10 As shown, Figure 6 Step S50 in the temperature error detection method shown includes the following steps S510 to S540.

[0155] Step S510: Read the first temperature;

[0156] Step S520: Obtain the simulated temperature coefficient based on the first temperature and the simulated temperature coefficient curve;

[0157] Step S530: Obtain the first standard temperature coefficient based on the first temperature and the first-order standard curve;

[0158] Step S540: Obtain the temperature error based on the simulated temperature coefficient, the first standard temperature coefficient, and the first parameter.

[0159] For example, Figure 10 An example of the specific process for calculating temperature error is as follows: Figure 11 As shown. For example, as Figure 11 As shown, in step S510, the first temperature T1 is read; in step S520, the simulated temperature coefficient V(T1) is obtained based on the first temperature T1 and the temperature coefficient simulation curve. That is, the simulated temperature coefficient V(T1) is the voltage value on the vertical axis of the temperature coefficient simulation curve corresponding to the first temperature T1. This temperature coefficient simulation curve is, for example, obtained by... Figure 7 The temperature coefficient simulation curve obtained in the steps shown; in step S530, the first standard temperature coefficient V'(T1) is obtained based on the first temperature T1 and the first-order standard curve, that is, the first standard temperature coefficient V'(T1) is the voltage value on the ordinate of the first temperature T1 on the first-order standard curve. This first-order standard curve is, for example, based on... Figure 8The first standard curve obtained by the first parameter k and the second parameter b is shown; in step S540, the temperature error is obtained based on the simulated temperature coefficient V(T1), the first standard temperature coefficient V'(T1) and the first parameter k.

[0160] For example, such as Figure 11 As shown, in step S540, the simulated temperature coefficient V(T1) corresponds to the second standard temperature coefficient V'(T2) on the first-order standard curve, and V(T1) = V'(T2). For example, the abscissa temperature value on the first-order standard curve corresponding to the second standard temperature coefficient V'(T2) is the second temperature T2, and the difference between the second temperature T2 and the first temperature T1 is the temperature error. For example, combined with formula (12), the temperature error can be expressed by the following formula (14):

[0161]

[0162] For example, in step S540, combined with formula (14), it can be seen that when the first temperature T1 is any temperature value T, the temperature error can be obtained based on the simulated temperature coefficient V(T), the first standard temperature coefficient V'(T), and the first parameter k. For example, combining formulas (12) and (14), the temperature error for any temperature value T can be expressed by the following formula (15):

[0163]

[0164] In at least one embodiment of this disclosure, for example Figures 6 to 11 The exemplary temperature error detection method obtains a first-order standard curve based on the temperature coefficient simulation curve obtained by simulating the temperature sensing circuit. It does not require complex multi-order calculations, so the temperature error can be calculated using a linear method, thereby reducing computational complexity, saving computational costs, and improving computational efficiency.

[0165] Figure 12 for Figure 6 Another exemplary flowchart of step S30.

[0166] For example, in some examples, in Figure 6 In the temperature error detection method shown, it is also possible to, for example... Figure 4 The temperature sensing circuit shown actually measures the voltage value V(T1) corresponding to a temperature value T1 to calibrate the first-order standard curve. For example, this method is called one-point calibration; correspondingly, for example... Figure 9A or Figure 9B The method shown is called calibration-free, which eliminates the need for actual measurements of the temperature sensing circuit. For example, in one-point calibration, the process of obtaining the first parameter k from the temperature coefficient simulation curve is similar to... Figure 8 The process is the same as in step S310; however, the process of obtaining the second parameter b from the temperature coefficient simulation curve requires using the voltage value V(T1) corresponding to the actual measured temperature value T1.

[0167] For example, such as Figure 12 As shown, in a one-point calibration, in order to obtain the second parameter b, Figure 6 The temperature error detection method shown in step S30 further includes the following steps S331 to S332.

[0168] Step S331: Measure and obtain the first temperature coefficient of the temperature sensing circuit;

[0169] Step S332: Obtain the corrected second parameter based on the first parameter and the first temperature coefficient.

[0170] For example, in step S331, by... Figure 4 The temperature sensing circuit shown obtains the first temperature coefficient through actual measurement, which is the voltage value V(T1) corresponding to the actual measured temperature value T1.

[0171] For example, in step S332, the corrected second parameter b' can be obtained based on the first parameter k and the first temperature coefficient V(T1). For example, the slope of the first-order standard curve is k, and the first-order standard curve passes through the actual measurement point (T1, V(T1)). Combining formula (12), the corrected second parameter b' = V(T1) - kV1 can be obtained, and a one-point calibrated first-order standard curve can be obtained. This one-point calibrated first-order standard curve can be expressed by the following formula (16):

[0172] V′(T)=kT+[V(T1)-kT1] (16)

[0173] For example, when the ratio of voltage V′(T) to its corresponding temperature coefficient μ is 1, the temperature T can be obtained by combining formulas (5) and (16), and this temperature T can be expressed by the following formula (17):

[0174]

[0175] For example, based on Figure 10 or Figure 11 The method shown can be used to obtain the temperature error corresponding to the first-order standard curve of this point calibration. Combining formulas (15) and (16), the temperature error corresponding to the first-order standard curve of this point calibration can be expressed by the following formula (18):

[0176]

[0177] In at least one embodiment of this disclosure, for example Figure 12The exemplary temperature error detection method, based on the first-order standard curve obtained by simulating the temperature coefficient simulation curve of the temperature sensing circuit, performs a point calibration on the first-order standard curve, thereby improving the accuracy of the first-order standard curve and thus improving the accuracy of the obtained temperature error.

[0178] Figure 13 for Figure 6 Another exemplary flowchart of step S30.

[0179] For example, in some examples, in Figure 6 In the temperature error detection method shown, it is also possible to, for example... Figure 4 The temperature sensing circuit shown measures the voltage values ​​V(T1) and V(T2) corresponding to two temperature values ​​T1 and T2, respectively, to calibrate the first-order standard curve. For example, this method is called two-point calibration; correspondingly, for example... Figure 9A or Figure 9B The method shown is called calibration-free, which does not require actual measurements of the temperature sensing circuit. For example, in two-point calibration, the process of obtaining the first parameter k and the second parameter b from the temperature coefficient simulation curve requires the use of the voltage value V(T1) corresponding to the actual measured temperature value T1 and the voltage value V(T2) corresponding to the temperature value T2.

[0180] For example, such as Figure 13 As shown, in two-point calibration, in order to obtain the first parameter k and the second parameter b, Figure 6 The temperature error detection method shown in step S30 also includes the following steps S341 to S342.

[0181] Step S341: Measure and obtain the first temperature coefficient of the temperature sensing circuit and a second temperature coefficient that is different from the first temperature coefficient;

[0182] Step S342: Obtain the corrected first parameter and the corrected second parameter based on the first temperature coefficient and the second temperature coefficient.

[0183] For example, in step S341, by... Figure 4 The temperature sensing circuit shown obtains a first temperature coefficient and a second temperature coefficient through actual measurement. The first temperature coefficient is the voltage value V(T1) corresponding to the actual measured temperature value T1, and the second temperature coefficient is the voltage value V(T2) corresponding to the actual measured temperature value T2.

[0184] For example, in step S342, the corrected first parameter k” and the corrected second parameter b” can be obtained based on the first temperature coefficient V(T1) and the first temperature coefficient V(T2). For example, the first-order standard curve is obtained through the actual measurement points (T1, V(T1)) and (T2, V(T2)). Combining with formula (12), the corrected first parameter can be obtained. The corrected second parameter Furthermore, a first-order standard curve with two-point calibration can be obtained. This first-order standard curve with two-point calibration can be expressed by the following formula (19):

[0185]

[0186] For example, when the ratio of voltage V′(T) to its corresponding temperature coefficient μ is 1, the temperature T can be obtained by combining formulas (5) and (19), and this temperature T can be expressed by the following formula (20):

[0187]

[0188] For example, based on Figure 10 or Figure 11 The method shown can be used to obtain the temperature error corresponding to the first-order standard curve of the two-point calibration. Combining formulas (15) and (19), the temperature error corresponding to the first-order standard curve of the two-point calibration can be expressed by the following formula (21):

[0189]

[0190] In at least one embodiment of this disclosure, for example Figure 13 The exemplary temperature error detection method, based on the temperature coefficient simulation curve obtained by simulating the temperature sensing circuit to obtain a first-order standard curve, performs two-point calibration on the first-order standard curve, which further improves the accuracy of the first-order standard curve, thereby improving the accuracy of the obtained temperature error.

[0191] Figure 14 This is a schematic diagram illustrating an example of a temperature error detection method based on a bandgap reference circuit temperature sensor, provided in at least one embodiment of this disclosure.

[0192] For example, such as Figure 14 As shown, by, for example Figure 2 or Figure 3 The bandgap reference circuit in the middle realizes the reference for the first positive temperature coefficient voltage ΔV BE The scaling increases the dynamic range of the temperature coefficient μ; a first-order standard curve can be obtained using no calibration, one-point calibration, and two-point calibration methods, respectively; based on this first-order standard curve and in... Figure 6The temperature coefficient simulation curve obtained in step S20 can be used to obtain the temperature error corresponding to no calibration, one-point calibration, and two-point calibration, respectively.

[0193] Figure 15 This is a schematic diagram of another example of a temperature error detection method based on a bandgap reference circuit temperature sensor provided in at least one embodiment of the present disclosure;

[0194] For example, such as Figure 15 As shown, the temperature error detection method provided in at least one embodiment of this disclosure can be divided into three parts.

[0195] For example, such as Figure 15 As shown, the first part is to expand the dynamic range, that is, to scale the first positive temperature coefficient voltage ΔV. BE By passing the first positive temperature coefficient voltage ΔV BE Converted to positive temperature coefficient current I ptat Then, based on the positive temperature coefficient current I ptat Generates a voltage ΔV relative to the first positive temperature coefficient BE The second positive temperature coefficient voltage V_PTAT is scaled, which allows ΔVBE to be multiplied by a coefficient larger than 1, thereby increasing the dynamic range of the temperature coefficient μ.

[0196] For example, such as Figure 15 As shown, the second part is the reference standard line. For example, to find the optimal standard line, one must select the most suitable first-order standard curve as the measuring ruler to compare with the standard curve. Figure 6 The temperature coefficient simulation curves obtained in step S20 are compared. The first parameter (e.g., slope k) and the second parameter (e.g., intercept b) are obtained by combining no calibration, one-point calibration, and two-point calibration, thereby obtaining the most suitable first-order standard curve to minimize the temperature error over the entire PVT range.

[0197] For example, in the second part, it can be done through, for example Figure 9A or Figure 9B The method shown (referred to as the mean method) determines the first parameter k and the second parameter b, and this method is called calibration-free. For example, as Figure 9A As shown, the temperature coefficient simulation curve is a convex function. Therefore, the maximum value of b is obtained through the first straight line with slope k that is tangent to the temperature coefficient simulation curve. max Then, draw two straight lines with slope k from the highest and lowest points of the temperature coefficient simulation curve. The smaller of the two intersection points of these two lines with the vertical axis of the temperature coefficient simulation curve is the minimum value of b. min For example, such as Figure 9B As shown, the temperature coefficient simulation curve is a concave function. Therefore, the minimum value of b can be obtained through the first straight line with slope k that is tangent to the temperature coefficient simulation curve. minThen, draw two straight lines with slope k from the highest and lowest points of the temperature coefficient simulation curve. The larger of the two intersection points of these two lines with the vertical axis of the temperature coefficient simulation curve is the maximum value of b. max For example, the first parameter k and the second parameter b obtained based on the above process can yield an uncalibrated first-order standard curve.

[0198] For example, in the second part, it can also be done through, for example Figure 9A or Figure 9B The method shown (referred to as the mean method) determines the first parameter k by, for example... Figure 12 The method shown determines the second parameter b, and this method is called a one-point calibration. For example, by... Figure 4 The temperature sensing circuit shown obtains the voltage value V(T1) corresponding to the temperature value T1 through actual measurement. The straight line with slope k that passes through the actual measurement point (T1, V(T1)) is the first-order standard curve for one-point calibration.

[0199] For example, in the second part, it can also be done through, for example Figure 13 The method shown determines the first parameter k and the second parameter b, and this method is called two-point calibration. For example, by... Figure 4 The temperature sensing circuit shown obtains the voltage values ​​V(T1) and V(T2) corresponding to the temperature values ​​T1 and T2 respectively through actual measurement. The straight line through the actual measurement point (T1, V(T1)) and the actual measurement point (T2, V(T2)) is the first-order standard curve for two-point calibration.

[0200] For example, such as Figure 15 As shown, the third part is the linearization calculation of temperature error. For example... Figure 10 or Figure 11 The method shown compares the first-order standard curve and the temperature coefficient simulation curve obtained in the second part with formula (15). The temperature errors corresponding to no calibration, one-point calibration and two-point calibration can be obtained by combining the linearization formula (15).

[0201] This disclosure provides, for example, at least one embodiment. Figure 6 , Figure 14 or Figure 15 The temperature error detection method shown, on the one hand, uses, for example... Figure 2 or Figure 3The bandgap reference circuit in the circuit increases the dynamic range of the temperature coefficient μ. On the other hand, the first-order standard curve is obtained based on the temperature coefficient simulation curve obtained by simulating the temperature sensing circuit, which does not require complex multi-order calculations, thereby reducing computational complexity, saving computational costs, and improving computational efficiency. In addition, one-point calibration or two-point calibration can be selectively used to improve the accuracy of the first-order standard curve, thereby improving the accuracy of the obtained temperature error.

[0202] Figure 16 This is a schematic block diagram of a temperature error detection device based on a bandgap reference circuit temperature sensor, provided for at least one embodiment of the present disclosure.

[0203] For example, at least one embodiment of this disclosure provides a temperature error detection device based on a temperature sensor with a bandgap reference circuit. Figure 16 As shown, the temperature error detection device 300 includes an acquisition module 310, a simulation module 320, a processing module 330, and a measurement module 340.

[0204] For example, the acquisition module 310 is configured to acquire parameters of the temperature sensing circuit model, that is, the acquisition module 310 can be configured to perform, for example... Figure 6 Step S10 is shown.

[0205] For example, the simulation module 320 is configured to obtain a temperature coefficient simulation curve based on the parameters of the temperature sensing circuit model; that is, the simulation module 320 can be configured to perform, for example... Figure 6 Step S20 is shown.

[0206] For example, the processing module 330 is configured to obtain a first parameter and a second parameter from a temperature coefficient simulation curve, obtain a first-order standard curve based on the first and second parameters, and obtain a temperature error based on the temperature coefficient simulation curve and the first-order standard curve; that is, the processing module 330 can be configured to perform, for example... Figure 6 The steps S30 to S50 are shown. For example, during the execution of step S30, the processing module 330 is further configured to perform a first processing on the temperature coefficient simulation curve to obtain a first parameter, and to perform a second processing on the temperature coefficient simulation curve to obtain a second parameter.

[0207] For example, the measurement module 340 is configured to measure a first temperature coefficient of the temperature sensing circuit and a second temperature coefficient of the temperature sensing circuit that is different from the first temperature coefficient. That is, the measurement module 340 can be configured to perform, for example... Figure 12 The step S331 shown is to perform a point calibration by, for example, Figure 4The temperature sensing circuit shown performs actual measurement to obtain a first temperature coefficient (e.g., the voltage value V(T1) corresponding to the temperature value T1). At this time, the processing module 330 is also configured to obtain a corrected second parameter based on the first parameter and the first temperature coefficient; the measurement module 340 can also be configured to perform, for example... Figure 13 The step S341 shown is to perform a two-point calibration by, for example, Figure 4 The temperature sensing circuit shown performs actual measurements to obtain a first temperature coefficient and a second temperature coefficient (e.g., the voltage value V(T1) corresponding to temperature value T1 and the voltage value V(T2) corresponding to temperature value T2). At this time, the processing module 330 is also configured to obtain a corrected first parameter and a corrected second parameter based on the first and second temperature coefficients. As described above, for example... Figure 6 The temperature error detection method shown has already described in detail the operation of the temperature error detection device 300, so for the sake of brevity, it will not be repeated here. For relevant details, please refer to Figure 1 above. Figure 15 The description.

[0208] It should be noted that, Figure 16 The various modules described above in the temperature error detection device 300 shown can be configured as software, hardware, firmware, or any combination thereof to perform specific functions. For example, these modules may correspond to dedicated integrated circuits, pure software code, or modules combining software and hardware. As an example, see [reference to...]. Figure 16 The device described may be a PC computer, tablet device, personal digital assistant, smartphone, web application or other device capable of executing program instructions, but is not limited thereto.

[0209] Furthermore, although the temperature error detection device 300 has been divided into modules for performing corresponding processes in the description above, those skilled in the art will understand that the processes performed by each module can also be performed without any specific module division in the device or without clear boundaries between the modules. In addition, the above references... Figure 16 The temperature error detection device 300 described is not limited to the modules described above, but may also include other modules (e.g., storage module, data processing module, etc.) as needed, or the above modules may be combined.

[0210] At least one embodiment of this disclosure also provides a temperature error detection device based on a temperature sensor with a bandgap reference circuit. The temperature error detection device includes a processor and a memory. The memory includes one or more computer program modules. The one or more computer program modules are stored in the memory and configured to be executed by the processor. The one or more computer program modules include methods for implementing the temperature error detection method provided by the embodiments of this disclosure described above.

[0211] Figure 17 This is a schematic block diagram of a temperature error detection device based on a bandgap reference circuit temperature sensor, provided for at least one embodiment of the present disclosure.

[0212] For example, such as Figure 17 As shown, the temperature error detection device 400 includes a processor 410 and a memory 420. For example, the memory 420 is used to store non-transitory computer-readable instructions (e.g., one or more computer program modules). The processor 410 is used to execute the non-transitory computer-readable instructions, which, when executed by the processor 410, can perform one or more steps of the temperature error detection method described above. The memory 420 and the processor 410 can be interconnected via a bus system and / or other forms of connection mechanism (not shown).

[0213] For example, processor 410 may be a central processing unit (CPU), a digital signal processor (DSP), or other processing unit with data processing and / or program execution capabilities, such as a field-programmable gate array (FPGA); for example, the central processing unit (CPU) may be an x86 or ARM architecture. Processor 410 may be a general-purpose processor or a special-purpose processor, capable of controlling other components in the adaptive voltage and frequency regulation device 400 to perform desired functions.

[0214] For example, memory 420 may include any combination of one or more computer program products, which may include various forms of computer-readable storage media, such as volatile memory and / or non-volatile memory. Volatile memory may include, for example, random access memory (RAM) and / or cache memory. Non-volatile memory may include, for example, read-only memory (ROM), hard disk, erasable programmable read-only memory (EPROM), portable compact disc read-only memory (CD-ROM), USB memory, flash memory, etc. One or more computer program modules may be stored on the computer-readable storage medium, and processor 410 may run one or more computer program modules to implement various functions of device 400. Various application programs and various data, as well as various data used and / or generated by the application programs, may also be stored in the computer-readable storage medium.

[0215] It should be noted that, in the embodiments of this disclosure, the specific functions and technical effects of the temperature error detection device 400 can be referred to the description above of the temperature error detection method provided in at least one embodiment of this disclosure, and will not be repeated here.

[0216] Figure 18 A schematic block diagram of another temperature error detection device based on a bandgap reference circuit temperature sensor provided for at least one embodiment of this disclosure.

[0217] For example, such as Figure 18 As shown, the temperature error detection device 500 is, for example, suitable for implementing the temperature error detection method provided in the embodiments of this disclosure. It should be noted that... Figure 18 The temperature error detection device 500 shown is merely an example and does not impose any limitation on the functionality and scope of use of the embodiments disclosed herein.

[0218] For example, such as Figure 18 As shown, the temperature error detection device 500 may include a processing device (e.g., a central processing unit, a graphics processing unit, etc.) 51, which, for example, includes the temperature error detection device according to any embodiment of this disclosure, and can perform various appropriate actions and processes according to a program stored in a read-only memory (ROM) 52 or a program loaded from a storage device 48 into a random access memory (RAM) 53. The RAM 53 also stores various programs and data required for the operation of the temperature error detection device 500. The processing device 51, ROM 52, and RAM 53 are interconnected via a bus 54. An input / output (I / O) interface 55 is also connected to the bus 54. Typically, the following devices may be connected to the I / O interface 55: input devices 56 including, for example, a touchscreen, touchpad, keyboard, mouse, camera, microphone, accelerometer, gyroscope, etc.; output devices 57 including, for example, a liquid crystal display (LCD), speaker, vibrator, etc.; storage devices 58 including, for example, magnetic tape, hard disk, etc.; and communication devices 59. The communication device 59 allows the temperature error detection device 500 to communicate wirelessly or wiredly with other electronic devices to exchange data.

[0219] Although Figure 18 A temperature error detection device 500 with various devices is shown, but it should be understood that it is not required to implement or have all the devices shown, and the temperature error detection device 500 may alternatively implement or have more or fewer devices.

[0220] For detailed information and technical effects regarding the temperature error detection device 500, please refer to the above description of the temperature error detection method; it will not be repeated here.

[0221] Figure 19This is a schematic diagram of a storage medium provided for at least one embodiment of the present disclosure.

[0222] For example, such as Figure 19 As shown, the storage medium 600 is used to store non-transitory computer-readable instructions 610. For example, when the non-transitory computer-readable instructions 610 are executed by a computer, one or more steps in the temperature error detection method described above can be performed.

[0223] For example, the storage medium 600 can be used in the temperature error detection device 400 described above. For example, the storage medium 600 can be... Figure 17 The temperature error detection device 400 shown contains a memory 420. For example, related information regarding the storage medium 600 can be found in [reference needed]. Figure 17 The corresponding description of the memory 420 in the temperature error detection device 400 shown will not be repeated here.

[0224] The following points need to be clarified regarding this disclosure:

[0225] (1) The accompanying drawings of the embodiments of this disclosure only involve the structures involved in the embodiments of this disclosure. Other structures can be referred to the general design.

[0226] (2) Where there is no conflict, features of the same embodiment and different embodiments of this disclosure can be combined with each other.

[0227] The above are merely specific embodiments of this disclosure, but the scope of protection of this disclosure is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this disclosure should be included within the scope of protection of this disclosure. Therefore, the scope of protection of this disclosure should be determined by the scope of the claims.

Claims

1. A method for detecting temperature error using a temperature sensor based on a bandgap reference circuit, comprising: Obtain the parameters of the temperature sensing circuit model; The temperature coefficient simulation curve is obtained based on the parameters of the temperature sensing circuit model. The first parameter and the second parameter are obtained from the temperature coefficient simulation curve, wherein the first parameter is obtained based on the slope waveform of the temperature coefficient simulation curve, and the second parameter is obtained based on the first parameter and the temperature coefficient simulation curve; A first-order standard curve is obtained based on the first parameter and the second parameter; The temperature error is obtained based on the temperature coefficient simulation curve and the first-order standard curve. The step of obtaining the temperature coefficient simulation curve based on the temperature sensing circuit model parameters includes: The reference voltage and positive temperature coefficient voltage are obtained based on the temperature sensing circuit model described above. At least one first simulation was performed using the reference voltage and the positive temperature coefficient voltage to obtain at least one first temperature coefficient simulation curve; The temperature coefficient simulation curve is obtained based on the at least one first temperature coefficient simulation curve; The step of obtaining the reference voltage and positive temperature coefficient voltage based on the temperature sensing circuit model includes: The temperature sensing circuit model is made to generate a positive temperature coefficient current and a corresponding first positive temperature coefficient voltage. The temperature sensing circuit model generates the reference voltage based on the positive temperature coefficient current. The temperature sensing circuit model generates a positive temperature coefficient voltage scaled relative to the first positive temperature coefficient voltage based on the positive temperature coefficient current.

2. The temperature error detection method of claim 1, wherein, The first and second parameters obtained from the temperature coefficient simulation curve include: The temperature coefficient simulation curve is subjected to a first processing to obtain the first parameter; The temperature coefficient simulation curve is subjected to a second processing to obtain the second parameter.

3. The temperature error detection method of claim 2, wherein, The first processing of the temperature coefficient simulation curve to obtain the first parameter includes: Differentiate the temperature coefficient simulation curve to obtain the slope waveform of the temperature coefficient simulation curve; The slope waveform is subjected to a third processing step to obtain the first parameter.

4. The temperature error detection method of claim 3, wherein, The third processing of the slope waveform to obtain the first parameter includes: Obtain the first threshold and the second threshold of the slope waveform; The first parameter is obtained by weighting the first threshold and the second threshold of the slope waveform.

5. The temperature error detection method of claim 2, wherein, The second processing of the temperature coefficient simulation curve to obtain the second parameter includes: The first intercept is obtained based on the first parameter and the temperature coefficient simulation curve; The second intercept is obtained based on the first parameter and the temperature coefficient simulation curve; The second parameter is obtained by calculating the weighted sum of the first intercept and the second intercept.

6. The temperature error detection method of claim 5, wherein, The process of obtaining the first intercept based on the first parameter and the temperature coefficient simulation curve includes: Based on the first parameter and the temperature coefficient simulation curve, a first straight line tangent to the temperature coefficient simulation curve is obtained; The first intercept is obtained based on the intersection of the first straight line and the vertical axis of the temperature coefficient simulation curve.

7. The temperature error detection method of claim 5, wherein, The process of obtaining the second intercept based on the first parameter and the temperature coefficient simulation curve includes: Obtain the first threshold and the second threshold of the temperature coefficient simulation curve; Based on the first parameter and the first threshold of the temperature coefficient simulation curve, a second straight line intersecting with the first threshold of the temperature coefficient simulation curve is obtained; The third intercept is obtained based on the intersection of the second straight line and the vertical axis of the temperature coefficient simulation curve. Based on the first parameter and the second threshold of the temperature coefficient simulation curve, a third straight line intersecting with the second threshold of the temperature coefficient simulation curve is obtained; The fourth intercept is obtained based on the intersection of the third straight line and the vertical axis of the temperature coefficient simulation curve. The second intercept is obtained by comparing the third intercept and the fourth intercept.

8. The temperature error detection method of claim 7, wherein, The simulated temperature coefficient curve is a convex function. The step of comparing the third intercept and the fourth intercept to obtain the second intercept includes: In response to the third intercept being less than the fourth intercept, the second intercept becomes the third intercept; In response to the fourth intercept being less than the third intercept, the second intercept becomes the fourth intercept.

9. The temperature error detection method of claim 7, wherein, The temperature coefficient simulation curve is a concave function. The step of comparing the third intercept and the fourth intercept to obtain the second intercept includes: In response to the third intercept being greater than the fourth intercept, the second intercept becomes the third intercept; In response to the fourth intercept being greater than the third intercept, the second intercept becomes the fourth intercept.

10. The temperature error detection method of claim 1, wherein, The second parameter obtained from the temperature coefficient simulation curve is replaced with: The first temperature coefficient of the temperature sensing circuit is measured and obtained. The corrected second parameter is obtained based on the first parameter and the first temperature coefficient.

11. The temperature error detection method of claim 1, wherein, The first and second parameters obtained from the temperature coefficient simulation curve are replaced with: A first temperature coefficient and a second temperature coefficient different from the first temperature coefficient of the temperature sensing circuit are measured and obtained. The corrected first parameter and the corrected second parameter are obtained based on the first temperature coefficient and the second temperature coefficient.

12. The temperature error detection method of claim 1, wherein, The temperature error obtained based on the temperature coefficient simulation curve and the first-order standard curve includes: Read the first temperature; The simulated temperature coefficient is obtained based on the first temperature and the simulated temperature coefficient curve. The first standard temperature coefficient is obtained based on the first temperature and the first-order standard curve; The temperature error is obtained based on the simulated temperature coefficient, the first standard temperature coefficient, and the first parameter.

13. A temperature error detection device based on a temperature sensor with a bandgap reference circuit, comprising: The acquisition module is configured to acquire parameters of the temperature sensing circuit model. The simulation module is configured to obtain a simulated temperature coefficient curve based on the parameters of the temperature sensing circuit model. The processing module is configured to obtain a first parameter and a second parameter from the temperature coefficient simulation curve, obtain a first-order standard curve based on the first parameter and the second parameter, and obtain a temperature error based on the temperature coefficient simulation curve and the first-order standard curve, wherein the first parameter is obtained based on the slope waveform of the temperature coefficient simulation curve, and the second parameter is obtained based on the first parameter and the temperature coefficient simulation curve; The simulation module is further configured to obtain a reference voltage and a positive temperature coefficient voltage based on the temperature sensing circuit model; perform at least one first simulation using the reference voltage and the positive temperature coefficient voltage to obtain at least one first temperature coefficient simulation curve; and obtain the temperature coefficient simulation curve based on the at least one first temperature coefficient simulation curve. The simulation module is further configured to cause the temperature sensing circuit model to generate a positive temperature coefficient current and a corresponding first positive temperature coefficient voltage; cause the temperature sensing circuit model to generate the reference voltage based on the positive temperature coefficient current; and cause the temperature sensing circuit model to generate the positive temperature coefficient voltage scaled relative to the first positive temperature coefficient voltage based on the positive temperature coefficient current.

14. The temperature error detection apparatus of claim 13, wherein, The processing module is further configured to perform a first processing on the temperature coefficient simulation curve to obtain the first parameter, and to perform a second processing on the temperature coefficient simulation curve to obtain the second parameter.

15. The temperature error detection device according to claim 13, further comprising a measurement module configured to measure and obtain a first temperature coefficient of the temperature sensing circuit, and to measure and obtain a second temperature coefficient of the temperature sensing circuit that is different from the first temperature coefficient, wherein, The processing module is replaced by a configuration that obtains a corrected second parameter based on the first parameter and the first temperature coefficient, or obtains a corrected first parameter and a corrected second parameter based on the first temperature coefficient and the second temperature coefficient.

16. A temperature error detection device based on a temperature sensor with a bandgap reference circuit, comprising: processor; Memory, including one or more computer program modules; The one or more computer program modules are stored in the memory and configured to be executed by the processor, and the one or more computer program modules include methods for implementing any one of claims 1-12.

17. A storage medium for storing non-transitory computer-readable instructions that, when executed by a computer, can implement the method of any one of claims 1-12.

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