A method and system for analyzing defect distribution of piezoresistive ceramics

Abstract

The present invention discloses a method and system for analyzing the defect distribution of piezoresistive ceramics, belonging to the technical field of piezoresistive ceramics. The method of the present invention comprises: cooling piezoresistive ceramics with different doping amounts or manufacturing processes to a first set temperature, and measuring the first dielectric response of the piezoresistive ceramics within a set frequency range; heating the piezoresistive ceramics to a second set temperature, and measuring the second dielectric response of the piezoresistive ceramics within a set frequency range; drawing a first frequency spectrum of the piezoresistive ceramics at the first set temperature based on the first dielectric response, and drawing a second frequency spectrum of the piezoresistive ceramics at the second set temperature based on the second dielectric response; extracting the slopes of the curves on both sides of the loss peak in the first and second frequency spectrums, and determining the defect distribution of the piezoresistive ceramics based on the slopes. The present invention achieves the characterization of the defect distribution of piezoresistive ceramics, providing a new approach to aging detection of piezoresistive ceramics.

Description

Technical Field

[0001] The present invention relates to the technical field of piezoresistive ceramics, and more particularly, to a method and system for analyzing defect distribution of piezoresistive ceramics. Background Art

[0002] The double Schottky barrier at the grain boundaries of varistor ceramics is the origin of their varistor properties and determines the electrical performance and operational stability of the ceramic. This double Schottky barrier is formed by negatively charged acceptor defect interface states at the grain boundaries and donor defect depletion layers within the grains. Current research focuses primarily on defect identification and concentration characterization, but has not yet addressed the detection of diverse defect distributions. Summary of the Invention

[0003] In response to the above problems, the present invention proposes a method for analyzing defect distribution of varistor ceramics, comprising:

[0004] Cooling the piezoresistive ceramics with different doping amounts or manufacturing processes to a first set temperature, and measuring a first dielectric response of the piezoresistive ceramics within a set frequency range;

[0005] heating the piezoresistive ceramic to a second set temperature, and measuring a second dielectric response of the piezoresistive ceramic within a set frequency range;

[0006] Drawing a first frequency spectrum of the piezoresistive ceramic at a first set temperature according to the first dielectric response, and drawing a second frequency spectrum of the piezoresistive ceramic at a second set temperature according to the second dielectric response;

[0007] The slopes of the curves on both sides of the loss peak in the first spectrum graph and the second spectrum graph are extracted, and the defect distribution of the varistor ceramic is determined based on the slopes.

[0008] Optionally, the temperature value of the first set temperature is lower than the temperature value of the second set temperature.

[0009] Optionally, the slope determines the defect distribution of the varistor ceramic, specifically:

[0010] According to the slope, the slope of the rising section on the left side of the loss peak is determined to determine the long-range motion of defect relaxation, and the slope of the falling section on the right side of the loss peak is determined to determine the short-range motion of defect relaxation. According to the long-range motion of defect relaxation and the short-range motion of defect relaxation, the defect distribution of the varistor ceramic is determined.

[0011] Optionally, the first spectrum graph and the second spectrum graph are plotted in double logarithmic coordinates.

[0012] The present invention also provides a system for analyzing defect distribution of piezoresistive ceramics, comprising:

[0013] A first measuring unit cools the piezoresistive ceramics with different doping amounts or manufacturing processes to a first set temperature and measures a first dielectric response of the piezoresistive ceramics within a set frequency range;

[0014] a second measuring unit, heating the piezoresistive ceramic to a second set temperature and measuring a second dielectric response of the piezoresistive ceramic within a set frequency range;

[0015] a spectrum plotting unit for plotting a first spectrum of the piezoresistive ceramic at a first set temperature according to the first dielectric response, and a second spectrum of the piezoresistive ceramic at a second set temperature according to the second dielectric response;

[0016] The extraction unit extracts the slopes of the curves on both sides of the loss peak in the first spectrum diagram and the second spectrum diagram, and determines the defect distribution of the varistor ceramic according to the slopes.

[0017] Optionally, the temperature value of the first set temperature is lower than the temperature value of the second set temperature.

[0018] Optionally, the slope determines the defect distribution of the varistor ceramic, specifically:

[0019] According to the slope, the slope of the rising section on the left side of the loss peak is determined to determine the long-range motion of defect relaxation, and the slope of the falling section on the right side of the loss peak is determined to determine the short-range motion of defect relaxation. According to the long-range motion of defect relaxation and the short-range motion of defect relaxation, the defect distribution of the varistor ceramic is determined.

[0020] Optionally, the first spectrum graph and the second spectrum graph are plotted in double logarithmic coordinates.

[0021] The present invention realizes the characterization of the defect distribution of varistor ceramics and provides a new idea for aging detection of varistor ceramics. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 is a flow chart of the method of the present invention;

[0023] Figure 2a This is the dielectric spectrum of ZnO varistor ceramics with different Sb2O3 doping amounts at -100℃;

[0024] Figure 2b This is the dielectric spectrum of ZnO varistor ceramics with different Sb2O3 doping amounts at 200℃;

[0025] Figure 3a This is the fitting result diagram of different defect relaxation loss peaks of S4 varistor ceramics at -100℃;

[0026] Figure 3b This is the fitting result diagram of relaxation loss peaks of different defects in S4 varistor ceramics at 200℃;

[0027] Figure 4 This is a system structure diagram of the present invention. DETAILED DESCRIPTION

[0028] Exemplary embodiments of the present invention will now be described with reference to the accompanying drawings. However, the present invention may be embodied in many different forms and is not limited to the embodiments described herein. These embodiments are provided to provide a thorough and complete disclosure of the present invention and to fully convey the scope of the present invention to those skilled in the art. The terminology used in the exemplary embodiments shown in the accompanying drawings is not intended to limit the present invention. In the accompanying drawings, identical elements are denoted by the same reference numerals.

[0029] Unless otherwise specified, the terms used herein (including technical terms) have the meanings commonly understood by those skilled in the art. In addition, it is understood that terms defined in commonly used dictionaries should be understood to have the same meanings as those in the context of the relevant fields, and should not be understood as idealized or overly formal meanings.

[0030] The present invention proposes a method for analyzing the defect distribution of piezoresistive ceramics, such as Figure 1 Shown, including:

[0031] Cooling the piezoresistive ceramics with different doping amounts or manufacturing processes to a first set temperature, and measuring a first dielectric response of the piezoresistive ceramics within a set frequency range;

[0032] heating the piezoresistive ceramic to a second set temperature, and measuring a second dielectric response of the piezoresistive ceramic within a set frequency range;

[0033] Drawing a first frequency spectrum of the piezoresistive ceramic at a first set temperature according to the first dielectric response, and drawing a second frequency spectrum of the piezoresistive ceramic at a second set temperature according to the second dielectric response;

[0034] The slopes of the curves on both sides of the loss peak in the first spectrum graph and the second spectrum graph are extracted, and the defect distribution of the varistor ceramic is determined based on the slopes.

[0035] The first set temperature is lower than the second set temperature.

[0036] Among them, the slope determines the defect distribution of the varistor ceramic, specifically:

[0037] According to the slope, the slope of the rising section on the left side of the loss peak is determined to determine the long-range motion of defect relaxation, and the slope of the falling section on the right side of the loss peak is determined to determine the short-range motion of defect relaxation. According to the long-range motion of defect relaxation and the short-range motion of defect relaxation, the defect distribution of the varistor ceramic is determined.

[0038] The first spectrum diagram and the second spectrum diagram are plotted in double logarithmic coordinates.

[0039] The present invention will be further described below in conjunction with embodiments:

[0040] The specific operations are as follows:

[0041] 1. Cool the varistor ceramic to the set temperature and measure the dielectric response of the ceramic within the set frequency range, namely the "first dielectric response";

[0042] 2. Heat the ceramic to the next set temperature and measure the dielectric response of the ceramic within the set frequency range, which is the "second dielectric response";

[0043] 3. Plot the spectrum of the ceramic at different temperatures in a double logarithmic coordinate system and extract the slopes of the curves on both sides of the loss peak. The slope of the rising segment on the left reflects the long-range motion of defect relaxation, while the slope of the falling segment on the right reflects the short-range motion of defect relaxation.

[0044] 4. Repeat steps 1) to 3) for varistor ceramics with different doping amounts or manufacturing processes to determine the impact of doping amount or manufacturing process on defect distribution.

[0045] Taking ZnO varistor ceramics with different Sb2O3 doping amounts as an example, the 10 -1 ~10 6 The dielectric response in the Hz frequency range, such as Figure 2a and 2b As shown, the parameters of different defect relaxation loss peaks are analyzed in double logarithmic coordinates, such as Figure 3a and 3b As shown, the defect relaxation loss peak parameters at -100℃ and 200℃ are shown in Table 1 and Table 2.

[0046] Table 1

[0047]

[0048] Table 2

[0049]

[0050]

[0051] The analysis results show that Sb2O3 affects the distribution of intrinsic point defects and non-intrinsic defects. As the Sb2O3 doping amount increases, Zn i γ The inter-cluster coupling weakens during the relaxation process (m a increases), while intra-cluster coupling strengthens (n a Increase); V O × The inter-cluster coupling is strengthened (m b Decreases), while the intra-cluster coupling is weak (n bdecrease); the intercluster coupling of the intercrystalline phase is almost unaffected (m c changes slightly), but the intracluster coupling of the intercrystalline phase becomes stronger (n c increases); intercluster coupling at grain boundaries weakens (m d increases), while the intra-cluster coupling is strengthened (n d The results of the present invention are helpful to improve the electrical properties of ZnO varistor ceramics according to the influence of doping or manufacturing process on the defect distribution of ZnO varistor ceramics.

[0052] The present invention also provides a system 200 for analyzing defect distribution of piezoresistive ceramics, such as Figure 4 Shown, including:

[0053] The first measuring unit 201 cools the piezoresistive ceramics with different doping amounts or manufacturing processes to a first set temperature, and measures a first dielectric response of the piezoresistive ceramics within a set frequency range;

[0054] A second measuring unit 202 is configured to heat the piezoresistive ceramic to a second set temperature and measure a second dielectric response of the piezoresistive ceramic within a set frequency range;

[0055] A spectrum plotting unit 203 plots a first spectrum of the piezoresistive ceramic at a first set temperature according to the first dielectric response, and plots a second spectrum of the piezoresistive ceramic at a second set temperature according to the second dielectric response;

[0056] The extraction unit 204 extracts the slopes of the curves on both sides of the loss peak in the first spectrum graph and the second spectrum graph, and determines the defect distribution of the varistor ceramic according to the slopes.

[0057] The first set temperature is lower than the second set temperature.

[0058] Among them, the slope determines the defect distribution of the varistor ceramic, specifically:

[0059] According to the slope, the slope of the rising section on the left side of the loss peak is determined to determine the long-range motion of defect relaxation, and the slope of the falling section on the right side of the loss peak is determined to determine the short-range motion of defect relaxation. According to the long-range motion of defect relaxation and the short-range motion of defect relaxation, the defect distribution of the varistor ceramic is determined.

[0060] The first spectrum diagram and the second spectrum diagram are plotted in double logarithmic coordinates.

[0061] The present invention realizes the characterization of the defect distribution of varistor ceramics and provides a new idea for aging detection of varistor ceramics.

[0062] It will be understood by those skilled in the art that the embodiments of the present invention may be provided as methods, systems, or computer program products. Therefore, the present invention may take the form of a complete hardware embodiment, a complete software embodiment, or an embodiment combining software and hardware. Furthermore, the present invention may take the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code. The solutions in the embodiments of the present invention may be implemented in various computer languages, for example, the object-oriented programming language Java and the interpreted scripting language JavaScript.

[0063] The present invention is described with reference to flowcharts and / or block diagrams of methods, devices (systems), and computer program products according to embodiments of the present invention. It should be understood that each process and / or block in the flowcharts and / or block diagrams, as well as combinations of processes and / or blocks in the flowcharts and / or block diagrams, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing device to produce a machine, so that the instructions executed by the processor of the computer or other programmable data processing device generate instructions for implementing the processes in the flowcharts and / or block diagrams. Figure 1 a process or multiple processes and / or boxes Figure 1 A device that provides the functions specified in a block or multiple blocks.

[0064] These computer program instructions may also be stored in a computer readable memory that can direct a computer or other programmable data processing device to work in a specific manner, so that the instructions stored in the computer readable memory produce an article of manufacture comprising an instruction device, which implements the process Figure 1 a process or multiple processes and / or boxes Figure 1 The function specified in one or more boxes.

[0065] These computer program instructions can also be loaded onto a computer or other programmable data processing device so that a series of operational steps are executed on the computer or other programmable device to produce a computer-implemented process, thereby providing the instructions executed on the computer or other programmable device for implementing the process. Figure 1 a process or multiple processes and / or boxes Figure 1 A step that specifies a function in one or more boxes.

[0066] Although the preferred embodiments of the present invention have been described, those skilled in the art may make additional changes and modifications to these embodiments once they have learned the basic creative concept. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications that fall within the scope of the present invention.

[0067] Obviously, those skilled in the art may make various changes and modifications to the present invention without departing from the spirit and scope of the present invention. Thus, if such changes and modifications fall within the scope of the claims and their equivalents, the present invention is intended to include such changes and modifications.

Claims

1. A method for analyzing defect distribution of a varistor ceramic, the method comprising: Cooling the piezoresistive ceramics with different doping amounts or manufacturing processes to a first set temperature, and measuring a first dielectric response of the piezoresistive ceramics within a set frequency range; heating the piezoresistive ceramic to a second set temperature, and measuring a second dielectric response of the piezoresistive ceramic within a set frequency range; Drawing a first frequency spectrum of the piezoresistive ceramic at a first set temperature according to the first dielectric response, and drawing a second frequency spectrum of the piezoresistive ceramic at a second set temperature according to the second dielectric response; Extracting the slopes of the curves on both sides of the loss peak in the first spectrum and the second spectrum, and determining the defect distribution of the varistor ceramic according to the slopes; The defect distribution of the varistor ceramic is determined according to the slope, specifically: According to the slope, the slope of the rising section on the left side of the loss peak is determined to determine the long-range motion of defect relaxation, and the slope of the falling section on the right side of the loss peak is determined to determine the short-range motion of defect relaxation. According to the long-range motion of defect relaxation and the short-range motion of defect relaxation, the defect distribution of the varistor ceramic is determined. 2 . The method according to claim 1 , wherein the first set temperature is lower than the second set temperature. 3 . The method according to claim 1 , wherein the first spectrum graph and the second spectrum graph are plotted in double logarithmic coordinates.

4. A system for analyzing defect distribution of piezoresistive ceramics, the system comprising: A first measuring unit cools the piezoresistive ceramics with different doping amounts or manufacturing processes to a first set temperature and measures a first dielectric response of the piezoresistive ceramics within a set frequency range; a second measuring unit, heating the piezoresistive ceramic to a second set temperature and measuring a second dielectric response of the piezoresistive ceramic within a set frequency range; a spectrum plotting unit for plotting a first spectrum of the piezoresistive ceramic at a first set temperature according to the first dielectric response, and a second spectrum of the piezoresistive ceramic at a second set temperature according to the second dielectric response; An extraction unit extracts the slopes of the curves on both sides of the loss peak in the first spectrum graph and the second spectrum graph, and determines the defect distribution of the varistor ceramic according to the slopes; The defect distribution of the varistor ceramic is determined according to the slope, specifically: According to the slope, the slope of the rising section on the left side of the loss peak is determined to determine the long-range motion of defect relaxation, and the slope of the falling section on the right side of the loss peak is determined to determine the short-range motion of defect relaxation. According to the long-range motion of defect relaxation and the short-range motion of defect relaxation, the defect distribution of the varistor ceramic is determined. The system according to claim 4 , wherein the first set temperature has a lower temperature than the second set temperature. The system according to claim 4 , wherein the first spectrum graph and the second spectrum graph are plotted in a double logarithmic coordinate system.

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