A charge-trapping type two-dimensional horizontal homojunction rectifier and its fabrication method

Abstract

This invention provides a charge-trapping type two-dimensional horizontal homojunction rectifier and its fabrication method, relating to the field of semiconductor electronics technology. It enables p-doping and n-doping of bipolar two-dimensional tungsten diselenide using graphodyne and a silicon dioxide insulating layer under a positive gate electric field. The resulting p-n junction achieves a large rectification ratio and stable rectification performance. This rectifier simultaneously performs n-type and p-type doping on the two-dimensional tungsten diselenide, forming a p-n homojunction in the horizontal direction. This allows the output current to exhibit high and low levels depending on the polarity of the input drain-source voltage, thus achieving the rectifier function. The rectifier achieves p-type and n-type doping under the influence of a positive gate electric field applied by the silicon gate electrode, through simultaneous contact between a portion of the two-dimensional tungsten diselenide with the graphodyne film and the silicon dioxide insulating layer, forming a homojunction. The technical solution provided by this invention is applicable to the rectification process.

Description

Technical Field

[0001] This invention relates to the field of semiconductor electronics technology, and in particular to a charge-trapping type two-dimensional horizontal homojunction rectifier and its fabrication method. Background Technology

[0002] PN junctions are fundamental building blocks in the fields of electronics and optoelectronics, with wide applications in rectifiers, photovoltaic cells, diodes, and transistors. Two-dimensional materials have formed a vast family, including metals (such as graphene), semiconductors (such as black phosphorus and transition metal chalcogenides), and insulators (such as boron nitride), attracting significant attention as promising candidates for future integrated circuits. Single-layer two-dimensional semiconductors, lacking dangling bonds and with a single-layer thickness of only ~0.6 nm, still maintain a good channel-gate interface, providing higher carrier mobility than silicon as transistors enter the 10 nm technology node. The emergence of two-dimensional materials has opened up new prospects and injected vitality into PN junction research. Currently, there are reports on research related to two-dimensional semiconductor PN junctions. In terms of fabrication processes, two-dimensional semiconductor PN junctions can avoid high-energy ion implantation and instead employ methods such as thickness engineering, surface modification, and van der Waals interface coupling. In terms of applications, the separation of gate electrodes allows for switching between nn, np, PN, and pp junctions; this reconfigurable feature is a unique advantage of two-dimensional semiconductor PN junctions. Two-dimensional tungsten diselenide, as a bipolar transport material, can have its polarity controlled by discrete gate electrodes, source / drain electrode doping, and semi-floating gates. However, the rectification performance of WSe2 homojunctions generated by these methods is currently limited. Therefore, the development of WSe2 homojunction pn junctions based on new principles is very necessary.

[0003] Therefore, it is necessary to study a charge-trapping type two-dimensional horizontal homojunction rectifier and its fabrication method to address the shortcomings of existing technologies and solve or mitigate one or more of the above-mentioned problems. Summary of the Invention

[0004] In view of this, the present invention provides a charge-trapping type two-dimensional horizontal homojunction rectifier and its fabrication method, which can utilize graphdiyne and silicon dioxide insulating layers to p-dop and n-dop the bipolar two-dimensional tungsten diselenide under positive gate electric field conditions. The resulting pn junction can achieve a large rectification ratio and stable rectification performance.

[0005] On one hand, the present invention provides a charge-trapping type two-dimensional horizontal homojunction rectifier. The rectifier forms a pn homojunction in the horizontal direction by simultaneously performing n-type doping and p-type doping on two-dimensional tungsten diselenide. As a result, its output current exhibits high and low levels depending on the positive and negative values ​​of the input drain-source voltage, thereby realizing the rectifier function.

[0006] In addition to the aspects and any possible implementations described above, a further implementation is provided in which the rectifier includes the two-dimensional tungsten diselenide, graphdiyne film, insulating layer, and silicon gate electrode;

[0007] The silicon gate electrode is located at the bottom; the silicon dioxide insulating layer is deposited on the silicon gate electrode, and the graphdiyne film is deposited on the insulating layer; the two-dimensional tungsten diselenide is deposited on the graphdiyne film and the silicon insulating layer;

[0008] The silicon gate electrode is used to apply a forward gate electric field; under the action of the forward gate electric field, the graphdiyne film and the corresponding two-dimensional tungsten diselenide are p-type doped, and the insulating layer and the corresponding two-dimensional tungsten diselenide are n-type doped, so that the two-dimensional tungsten diselenide forms a pn homojunction in the horizontal direction.

[0009] In addition to the aspects described above and any possible implementation, a further implementation is provided in which the rectifier further includes a source electrode metal layer and a drain electrode metal layer, the source electrode metal layer and the drain electrode metal layer being disposed at opposite ends of the two-dimensional tungsten diselenide.

[0010] In addition to the aspects described above and any possible implementation, a further implementation is provided in which the thickness of the two-dimensional tungsten diselenide 1 is 5~10 nm.

[0011] In addition to the aspects described above and any possible implementation, a further implementation is provided in which the thickness of the graphdiyne film is 10~15 nm.

[0012] In addition to the aspects and any possible implementations described above, a further implementation is provided in which the insulating layer is a SiO2 insulating layer, an HfO2 insulating layer, or an HfZrO insulating layer;

[0013] The thickness of the SiO2 insulating layer is 285~300nm; the thickness of the HfO2 insulating layer or HfZrO insulating layer is 10~20nm.

[0014] In addition to the aspects described above and any possible implementation, a further implementation is provided in which the thickness of both the source electrode metal layer and the drain electrode metal layer is 60~80nm.

[0015] On the other hand, the present invention provides a method for fabricating a charge-trapping type two-dimensional horizontal homojunction rectifier as described above, the method comprising the following steps:

[0016] S1. Prepare an assembly of a silicon dioxide insulating layer and a silicon gate electrode, then ultrasonically clean and dry the assembly; the assembly can be obtained by direct purchase.

[0017] S2. A graphdiyne film is transferred to a predetermined position on the silicon dioxide insulating layer by a patterned transfer method;

[0018] S3. A precise transfer technique is used to transfer two-dimensional tungsten diselenide from the silicon dioxide insulating layer to the position of graphyne, thereby realizing the preparation of a graphyne-two-dimensional tungsten diselenide heterojunction;

[0019] S4. Prepare source electrode metal layer and drain electrode metal layer on two-dimensional tungsten diselenide.

[0020] In addition to the aspects and any possible implementations described above, a further implementation is provided in which high-vacuum annealing is performed after step S3 is completed.

[0021] In addition to the aspects described above and any possible implementations, a further implementation is provided in which the vacuum degree of the high-vacuum annealing process is 10. -5 mbar, processing temperature 100~180℃, annealing time 2~5 hours.

[0022] Compared with the prior art, one of the above technical solutions has the following advantages or beneficial effects: The present invention utilizes the charge trapping effect of graphodyne on bipolar two-dimensional tungsten diselenide under positive gate voltage electric field to achieve p-doping of two-dimensional tungsten diselenide, which has high direct trapping efficiency, stable p-doping effect and strong effect; the silicon dioxide insulating layer n-dops two-dimensional tungsten diselenide, which simplifies the device structure and fabrication process; the formed pn junction can obtain a large rectification ratio and stable rectification performance.

[0023] Of course, any product implementing this invention does not necessarily need to achieve all of the technical effects described above at the same time. Attached Figure Description

[0024] To more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0025] Figure 1 This is a schematic diagram of a charge-trapping type two-dimensional horizontal homojunction rectifier structure provided in one embodiment of the present invention;

[0026] Figure 2 This is the output characteristic curve of a rectifier provided in one embodiment of the present invention under gradient positive gate voltage conditions.

[0027] In the figure:

[0028] 1. Two-dimensional tungsten diselenide; 2. Source electrode metal layer; 3. Drain electrode metal layer; 4. Graphdiyne film; 5. Silicon dioxide insulating layer; 6. Silicon gate electrode. Detailed Implementation

[0029] To better understand the technical solution of the present invention, the embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0030] It should be understood that the described embodiments are merely some, not all, of the embodiments of the present invention. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without inventive effort are within the scope of protection of the present invention.

[0031] To address the shortcomings of existing technologies, this invention proposes a charge-trapping type two-dimensional horizontal homojunction. Under the action of a positive gate piezoelectric field, graphyne is used to trap the bipolar two-dimensional tungsten selenide in the heterojunction region to achieve p-type doping. The silicon dioxide insulating layer can n-dop the two-dimensional tungsten selenide outside the heterojunction in the channel region, thereby forming a horizontal homojunction pn junction in the two-dimensional tungsten selenide and obtaining rectification function.

[0032] According to a specific embodiment of this disclosure, the charge-trapping type two-dimensional horizontal homojunction rectifier includes two-dimensional tungsten diselenide 1, a pure gold source electrode metal layer 2, a pure gold drain electrode metal layer 3, a graphdiyne thin film 4, a silicon dioxide insulating layer 5, and a silicon gate electrode 6. A positive gate electric field can be applied to the silicon gate electrode 6. Under the action of the positive gate electric field, the graphdiyne thin film 4 can generate p-type doping of the two-dimensional tungsten diselenide 1 in the graphdiyne-two-dimensional tungsten diselenide heterojunction region. The silicon dioxide insulating layer 5 performs n-type doping of the two-dimensional tungsten diselenide 1 in the region outside the heterojunction in the channel. The two-dimensional tungsten diselenide 1 forms a pn homojunction in the horizontal direction, and its output current exhibits high and low levels depending on the positive and negative values ​​of the input source and drain voltages, respectively, thus realizing the function of a rectifier.

[0033] Furthermore, the width of the two-dimensional horizontal homojunction junction region can be adjusted by the distance between the source electrode metal layer 2 and the drain electrode metal layer 3, as well as the contact width between the graphdiyne film 4 and the two-dimensional tungsten diselenide 1.

[0034] Furthermore, the thickness of the two-dimensional tungsten diselenide 1 is 5~10 nm.

[0035] Furthermore, the thickness of the graphdiyne film 4 is 10~15 nm.

[0036] Furthermore, the thickness of the pure gold electrode metal layer is 60~80nm.

[0037] Furthermore, the thickness of the silicon dioxide insulating layer 5 is 300 nm.

[0038] This invention utilizes the charge trapping effect of tungsten diselenide in the graphdiyne-tungsten diselenide heterojunction region under a gate voltaic field to construct a horizontal homogeneous pn junction of tungsten diselenide. Silicon dioxide serves as the gate dielectric layer, silicon as the gate electrode, graphdiyne as the charge trapping layer, and tungsten diselenide as the channel material. Under a continuous forward gate voltaic field, a large number of electrons in the tungsten diselenide in the heterojunction region of the channel are trapped in the graphdiyne, equivalent to p-type doping of this portion of the tungsten diselenide. Meanwhile, the tungsten diselenide in another separate region is n-type doped with silicon dioxide. Thus, a homogeneous pn junction is formed horizontally, and the output current exhibits obvious rectification characteristics, achieving the function of a high-performance rectifier. The output curve of its rectification characteristics is shown in the figure below. Figure 2 As shown.

[0039] The fabrication steps of the charge-trapping type two-dimensional horizontal homojunction rectifier are as follows:

[0040] Step 1. Place the silicon dioxide insulating liner 5 and the silicon gate electrode 6 into acetone, isopropanol and deionized water solutions in sequence for ultrasonic cleaning for 15 minutes, then remove and blow dry.

[0041] Step 2. Transfer the graphdiyne film 4 to a certain position on the silicon dioxide insulating layer using a patterned transfer method;

[0042] Step 3. Using a precise transfer technique, two-dimensional tungsten diselenide 1 is transferred to a fixed relative position of graphyne on the silicon dioxide insulating layer 5, thus forming a graphyne-two-dimensional tungsten diselenide heterojunction.

[0043] Step 4. Prepare a pure gold metal electrode layer on two-dimensional tungsten diselenide 1.

[0044] Furthermore, after the graphdiyne-two-dimensional tungsten diselenide heterojunction is prepared, it undergoes high-vacuum annealing treatment with a vacuum degree of 10. -5 mbar, processing temperature 100~180℃, annealing time 2~5 hours.

[0045] The above-mentioned method for patterned transfer of graphdiyne thin films includes:

[0046] Step 2.1: Apply photoresist evenly to the target substrate, perform patterned exposure and development to expose the areas where the graphdiyne film pattern is to be transferred;

[0047] Step 2.2: Transfer the graphdiyne film onto the developed target substrate using a wet transfer method;

[0048] Step 2.3: Remove the adhesive from the target substrate after transferring the graphdiyne film, and then a patterned graphdiyne film is obtained.

[0049] For more detailed information on patterned transfer of graphdiene films, please refer to Chinese Invention Patent CN112859514A. Existing precision transfer techniques in the field can be used for precise transfer; this invention does not impose any specific limitations.

[0050] Example 1

[0051] A charge-trapping type two-dimensional horizontal homojunction rectifier includes two-dimensional tungsten diselenide 1, a pure gold source electrode metal layer 2, a pure gold drain electrode metal layer 3, a graphdiyne thin film 4, a silicon dioxide insulating layer 5, and a silicon gate electrode 6. The silicon gate electrode 6 can be subjected to a positive gate electric field. Under the action of the positive gate electric field, the graphdiyne thin film 4 can induce p-type doping of the two-dimensional tungsten diselenide 1 in the graphdiyne-tungsten diselenide heterojunction region. The silicon dioxide insulating layer 5 induces n-type doping of the two-dimensional tungsten diselenide 1 in the region outside the heterojunction in the channel. The two-dimensional tungsten diselenide 1 forms a pn homojunction in the horizontal direction. Its output current exhibits high and low levels depending on the positive and negative values ​​of the input source-drain voltage, respectively, thus realizing the rectifier function. The width of the two-dimensional horizontal homojunction region can be adjusted by the distance between the pure gold electrode metal layers and the contact width between the graphdiyne thin film 4 and the two-dimensional tungsten diselenide 1. The thickness of the two-dimensional tungsten diselenide 1 is 5 nm. The thickness of the graphdiyne thin film 4 is 10 nm. The thickness of the pure gold electrode metal layer is 60 nm. The thickness of the silicon dioxide insulating layer 5 is 300 nm. The fabrication steps of the two-dimensional horizontal homojunction rectifier are as follows: First, the silicon dioxide insulating layer 5 and the silicon gate electrode 6 are sequentially immersed in acetone, isopropanol, and deionized water solutions for ultrasonic cleaning for 15 minutes, then removed and dried. Next, a graphdiyne film 4 is transferred to a specific position on the silicon dioxide insulating layer using a patterned transfer method. Then, a two-dimensional tungsten diselenide 1 is transferred to a fixed relative position on the silicon dioxide insulating layer 5 using a precise transfer technique, forming a graphdiyne-two-dimensional tungsten diselenide heterojunction. A pure gold metal electrode layer is then fabricated on the two-dimensional tungsten diselenide 1. Finally, a high-vacuum annealing treatment is performed at a vacuum degree of 10. -5 mbar, processing temperature 100℃, annealing time 5 hours.

[0052] Example 2

[0053] A charge-trapping type two-dimensional horizontal homojunction rectifier includes two-dimensional tungsten diselenide 1, a pure gold source electrode metal layer 2, a pure gold drain electrode metal layer 3, a graphdiyne thin film 4, a silicon dioxide insulating layer 5, and a silicon gate electrode 6. The silicon gate electrode 6 can be subjected to a positive gate electric field. Under the action of the positive gate electric field, the graphdiyne thin film 4 can induce p-type doping of the two-dimensional tungsten diselenide 1 in the graphdiyne-tungsten diselenide heterojunction region. The silicon dioxide insulating layer 5 induces n-type doping of the two-dimensional tungsten diselenide 1 in the region outside the heterojunction in the channel. The two-dimensional tungsten diselenide 1 forms a pn homojunction in the horizontal direction. Its output current exhibits high and low levels depending on the positive and negative values ​​of the input source-drain voltage, respectively, thus realizing the rectifier function. The width of the two-dimensional horizontal homojunction region can be adjusted by the distance between the pure gold electrode metal layers and the contact width between the graphdiyne thin film 4 and the two-dimensional tungsten diselenide 1. The thickness of the two-dimensional tungsten diselenide 1 is 7 nm. The thickness of the graphdiyne thin film 4 is 14 nm. The thickness of the pure gold electrode metal layer is 70 nm. The thickness of the silicon dioxide insulating layer 5 is 300 nm. The fabrication steps of the two-dimensional horizontal homojunction rectifier are as follows: First, the silicon dioxide insulating liner 5 and the silicon gate electrode 6 are sequentially immersed in acetone, isopropanol, and deionized water solutions for ultrasonic cleaning for 15 minutes, then removed and dried. Next, a graphdiyne film 4 is transferred to a specific position on the silicon dioxide insulating layer using a patterned transfer method. Then, a two-dimensional tungsten diselenide 1 is transferred to a fixed relative position on the silicon dioxide insulating layer 5 using a precise transfer technique, forming a graphdiyne-two-dimensional tungsten diselenide heterojunction. A pure gold metal electrode layer is then fabricated on the two-dimensional tungsten diselenide 1. Finally, a high-vacuum annealing treatment is performed at a vacuum degree of 10. -5 mbar, processing temperature 120℃, annealing time 3 hours.

[0054] Example 3

[0055] A charge-trapping type two-dimensional horizontal homojunction rectifier includes two-dimensional tungsten diselenide 1, a pure gold source electrode metal layer 2, a pure gold drain electrode metal layer 3, a graphdiyne thin film 4, a silicon dioxide insulating layer 5, and a silicon gate electrode 6. The silicon gate electrode 6 can be subjected to a positive gate electric field. Under the action of the positive gate electric field, the graphdiyne thin film 4 can induce p-type doping of the two-dimensional tungsten diselenide 1 in the graphdiyne-tungsten diselenide heterojunction region. The silicon dioxide insulating layer 5 induces n-type doping of the two-dimensional tungsten diselenide 1 in the region outside the heterojunction in the channel. The two-dimensional tungsten diselenide 1 forms a pn homojunction in the horizontal direction. Its output current exhibits high and low levels depending on the positive and negative values ​​of the input source-drain voltage, respectively, realizing the function of a rectifier. The width of the two-dimensional horizontal homojunction region can be adjusted by the distance between the pure gold electrode metal layers and the contact width between the graphdiyne thin film 4 and the two-dimensional tungsten diselenide 1. The thickness of the two-dimensional tungsten diselenide 1 is 10 nm. The thickness of the graphdiyne thin film 4 is 15 nm. The thickness of the pure gold electrode metal layer is 80 nm. The thickness of the silicon dioxide insulating layer 5 is 300 nm. The fabrication steps of the two-dimensional horizontal homojunction rectifier are as follows: First, the silicon dioxide insulating liner and the silicon gate electrode 6 are sequentially immersed in acetone, isopropanol, and deionized water solutions for ultrasonic cleaning for 15 minutes, then removed and dried. Next, a graphdiyne film 4 is transferred to a specific position on the silicon dioxide insulating layer using a patterned transfer method. Then, a two-dimensional tungsten diselenide 1 is transferred to a fixed relative position on the silicon dioxide insulating layer 5 using a precise transfer technique, forming a graphdiyne-two-dimensional tungsten diselenide heterojunction. A pure gold metal electrode layer is then fabricated on the two-dimensional tungsten diselenide 1. Finally, a high-vacuum annealing treatment is performed at a vacuum degree of 10. -5 mbar, processing temperature 150℃, annealing time 3 hours.

[0056] The foregoing has provided a detailed description of a charge-trapping type two-dimensional horizontal homojunction rectifier and its fabrication method provided in the embodiments of this application. The descriptions of the embodiments above are merely for the purpose of helping to understand the method and core ideas of this application; furthermore, those skilled in the art will recognize that, based on the ideas of this application, there will be changes in the specific implementation methods and application scope. Therefore, the content of this specification should not be construed as a limitation of this application.

[0057] It should also be noted that the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a product or system comprising a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a product or system. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the product or system including said element. "Substantially" means within an acceptable margin of error, indicating that a person skilled in the art can resolve the technical problem and substantially achieve the technical effect within a certain margin of error.

[0058] The terminology used in the embodiments of this invention is for the purpose of describing particular embodiments only and is not intended to limit the invention. The singular forms “a,” “the,” and “the” used in the embodiments of this invention and the appended claims are also intended to include the plural forms unless the context clearly indicates otherwise. In this application, the terms “upper,” “lower,” “left,” “right,” “middle,” etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. Some of the above terms may be used to indicate other meanings besides orientation or positional relationships; for example, the term “upper” may also be used in some cases to indicate a dependency or connection relationship. Those skilled in the art can understand the specific meaning of these terms in this application according to the specific circumstances. The term “and / or” used herein is merely a description of the association relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A alone, A and B simultaneously, and B alone. Additionally, the character “ / ” in this document generally indicates that the preceding and following related objects have an “or” relationship.

Claims

1. A charge-trapping type two-dimensional horizontal homojunction rectifier, characterized in that, The rectifier achieves its function by simultaneously performing n-type and p-type doping on two-dimensional tungsten diselenide, thereby forming a pn homojunction in the horizontal direction. This results in the output current exhibiting high and low levels depending on the positive and negative values ​​of the input drain-source voltage. The rectifier includes the two-dimensional tungsten diselenide, graphdiyne thin film, insulating layer, and silicon gate electrode; The silicon gate electrode is located at the bottom; the insulating layer is deposited on the silicon gate electrode, and the graphdiyne film is deposited on the insulating layer; the two-dimensional tungsten diselenide is deposited on the graphdiyne film and the insulating layer, and the two-dimensional tungsten diselenide is in direct contact with the graphdiyne film and the insulating layer respectively; The silicon gate electrode is used to apply a forward gate electric field; under the action of the forward gate electric field, the graphdiyne film produces p-type doping on the tungsten diselenide in the graphdiyne-2D tungsten diselenide heterojunction region, and the insulating layer produces n-type doping on the tungsten diselenide in the region outside the heterojunction in the channel, so that the tungsten diselenide forms a pn homojunction in the horizontal direction. The rectifier further includes a source electrode metal layer and a drain electrode metal layer, which are respectively disposed at both ends of the two-dimensional tungsten diselenide. The width of the two-dimensional horizontal homojunction junction region can be adjusted by the distance between the source electrode metal layer and the drain electrode metal layer, as well as the contact width between the graphdiyne film and the two-dimensional tungsten diselenide.

2. The charge-trapping type two-dimensional horizontal homojunction rectifier according to claim 1, characterized in that, The thickness of the two-dimensional tungsten diselenide is 5~10 nm.

3. The charge-trapping type two-dimensional horizontal homojunction rectifier according to claim 1, characterized in that, The thickness of the graphdiyne film is 10~15nm.

4. The charge-trapping type two-dimensional horizontal homojunction rectifier according to claim 1, characterized in that, The insulating layer is a SiO2 insulating layer, a HfO2 insulating layer, or a HfZrO insulating layer.

5. The charge-trapping type two-dimensional horizontal homojunction rectifier according to claim 1, characterized in that, The thickness of both the source electrode metal layer and the drain electrode metal layer is 60~80nm.

6. A method for fabricating a charge-trapping type two-dimensional horizontal homojunction rectifier according to any one of claims 1-5, characterized in that, The steps of the method include: S1. Prepare an assembly of insulating layer and silicon gate electrode, then ultrasonically clean and dry the assembly; S2. A graphdiyne film is transferred to a predetermined position on the insulating layer using a patterned transfer method; S3. A precise transfer technique is used to transfer one end of the two-dimensional tungsten diselenide from the insulating layer to the position of the graphyne film, thereby realizing the preparation of the graphyne-two-dimensional tungsten diselenide heterojunction; S4. Prepare source electrode metal layer and drain electrode metal layer on two-dimensional tungsten diselenide.

7. The method for fabricating a charge-trapping type two-dimensional horizontal homojunction rectifier according to claim 6, characterized in that, After step S3 is completed, high vacuum annealing is performed.

8. The method for fabricating a charge-trapping type two-dimensional horizontal homojunction rectifier according to claim 7, characterized in that, The vacuum degree of high vacuum annealing is 10. -5 mbar, processing temperature 100~180℃, annealing time 2~5 hours.

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