Radiation curable adhesive composition for semiconductor chip integration

Abstract

The application discloses a radiation curing adhesive composition for semiconductor chip integration, which comprises the following components in parts by weight: alkali-soluble polyacrylic acid 20-50 parts, alkali-soluble phenolic resin 40-100 parts, photoinitiator 9-15 parts, thermal crosslinking agent 5-30 parts, filler 40-80 parts, auxiliary agent 0.1-30 parts, and solvent 300-500 parts. The radiation curing adhesive composition provided by the application has the synergistic effect of multi-component mixed resins, requires low temperature for coating curing, has low energy consumption, high ductility, low stress, high metal adhesion, high heat resistance and low dielectric loss, and the pattern formed after curing has high fineness, and is especially suitable for packaging of semiconductor chips and as a multi-pole stack interlayer medium, so that the semiconductor substrate productivity and yield can be greatly improved, and the product life is prolonged.

Description

Technical Field

[0001] This invention relates to a radiation-curable colloidal composition, and more particularly to a radiation-curable colloidal composition for semiconductor chip integration. Background Technology

[0002] In recent years, with the miniaturization, precision, and functionality of electronic devices, the semiconductor packaging inside them has also become more precise and functional, and the wiring rules of semiconductor wafers have become more refined. Among them, semiconductor chips adopt multi-level stacked cores and circuits, which become more complex and precise as the chip functions increase. At the same time, the sealing and heat conduction between highly integrated stacked layers have also encountered higher requirements.

[0003] In the current manufacturing process of memory packages, film-like resin compositions are used to bond wiring substrates and protect semiconductor chips, as well as for bonding between semiconductor chips. As chip stacking becomes increasingly multi-level and wafer wiring patterns become more miniaturized, high heat is more easily generated on the surfaces of semiconductor components under load. Therefore, to facilitate heat dissipation to the outside of the package, the inter-chip stack isolation coating medium must possess high heat resistance, high thermal conductivity, and an ultra-thin thickness.

[0004] Furthermore, many existing inter-chip stack isolation coating media significantly reduce substrate adhesion, including the difficulty in etching smooth, fine patterns on the coating surface. Simultaneously, the use of photosensitive resin compositions of polyimide and benzoxazole requires extremely high exposure levels, thus reducing productivity in semiconductor assembly processes. The high exposure and heat required for curing also introduce residual stress into the cured film, leading to curling, deformation, and blistering issues on the substrate and chip, reducing the yield and lifespan of semiconductor substrates. Additionally, solvent evaporation may cause environmental pollution. Summary of the Invention

[0005] To address the aforementioned problems, this invention provides a radiation-curable colloidal composition for semiconductor chip integration, based on existing technologies. This composition solves the problems of low productivity, uneven and imprecise patterns, low insulation, and internal stress associated with photosensitive resins. It offers advantages such as low energy consumption, high heat resistance, high thermal conductivity, high pattern clarity, high productivity, and high yield.

[0006] A radiation-curable colloidal composition comprises the following components in parts by weight: 20-50 parts of alkali-soluble polyacrylate, 40-100 parts of alkali-soluble phenolic resin, 9-15 parts of photoinitiator, 5-30 parts of thermal crosslinking agent, 40-80 parts of filler, 0.1-30 parts of additives, and 300-500 parts of solvent.

[0007] In a preferred embodiment, the alkali-soluble polyacrylate in the radiation-cured colloid composition is present in a weight percentage of 30 to 40 parts, more preferably 35 parts.

[0008] In a preferred embodiment, the alkali-soluble phenolic resin in the radiation-cured colloidal composition comprises 60 to 80 parts by weight, more preferably 70 parts.

[0009] In a preferred embodiment, the photoinitiator in the radiation-curing colloidal composition comprises 10.5 to 13 parts by weight, more preferably 12 parts.

[0010] In a preferred embodiment, the thermal crosslinking agent in the radiation-cured colloid composition is present in a weight percentage of 10 to 25 parts, more preferably 12 parts.

[0011] In a preferred embodiment, the filler content in the radiation-cured colloid composition is 50 to 70 parts by weight, more preferably 60 parts.

[0012] In a preferred embodiment, the additives in the radiation-curing colloid composition are present in a weight percentage of 10 to 20 parts, more preferably 15 parts.

[0013] In a preferred embodiment, the solvent content in the radiation-curable colloid composition is 350 to 450 parts by weight, more preferably 400 parts.

[0014] The alkali-soluble phenolic resin used in this invention is preferably an alkali-soluble phenolic resin obtained by forced steam distillation at low temperature.

[0015] To lower the temperature of thermal curing and increase the crosslinking degree of radiation-cured colloidal composition, the thermal crosslinking agent is selected from one of Tianjin Tiantai Fine Chemicals Co., Ltd., Haining Hailong Chemical Co., Ltd., and Shanghai Youen UN-577; more preferably, when the thermal crosslinking agent is 6 to 15 parts, the generation of internal stress is reduced while ensuring the extensibility of the composition.

[0016] In addition, to improve the thermal crosslinking degree of the colloidal composition, it may also include a resin containing epoxy groups, such as epoxy soybean oil acrylate, which can be prepared by adopting the Chinese invention patent with patent number ZL201510926920.0 entitled "A UV rapid curing method for epoxy soybean oil acrylate resin".

[0017] To improve the photosensitivity of the radiation-cured colloidal composition, the photoinitiator is one or more of the following: carbazole oxime ester photoinitiators, coumarin oxime ester photoinitiators, thiophene cyclobisoxime esters, and thioxanone photoinitiators.

[0018] When the composition of the present invention is used as a positive radiation-cured colloidal composition, it may further include 0.1 to 30 parts of a thermal acid generator or a photoacid generator, which can enable the composition to have a high crosslinking rate. The photoacid generator is preferably a quinone diazide compound.

[0019] The filler in this invention is an inorganic particle, preferably an inorganic particle with high thermal conductivity, including one or more of silicon oxide, titanium oxide, silicon carbide, alumina, and talc. To ensure both the sensitivity and dispersibility of the resin composition, the particle size of the inorganic particles is preferably 100–300 nm.

[0020] The additives in this invention include one or more of leveling agents, silane coupling agents, and surfactants.

[0021] The leveling agent is preferably an organosilicon leveling agent, including one or more of LAG-605, BASF S Conc, and German Mingling LA411.

[0022] Among them, silane coupling agents help improve the adhesion to silicon substrates, including silane coupling agents such as trimethoxyaminopropylsilane, trimethoxyepoxysilane, and trimethoxyvinylsilane.

[0023] The surfactant is preferably one or more of IOTA1291, Wacker PULPSIL 960S, and BYK-345.

[0024] In order to ensure that the composition has a suitable film thickness and is not prone to bubble generation during the heating and curing process, the solvent in this invention is a solvent with a high boiling point, preferably 150-230°C, including two or more of γ-butyrolactone, N,N-dimethylformamide, cyclohexanone, N-methylpyrrolidone, and butyl acetate.

[0025] To reduce the occurrence of rough surface or excessively thin thickness of the pattern during development, this invention uses two alkali-soluble resins with similar alkali dissolution rates. Preferably, the alkali dissolution rate of the alkali-soluble polyacrylate is 0.5 to 1.5 times that of the alkali-soluble phenolic resin. The alkali dissolution rate is calculated per minute by measuring the difference in film thickness before and after development and the time required for dissolution. The dissolution rate of the alkali-soluble phenolic resin is 1000 to 20000 nm / min.

[0026] This invention employs a combination of alkali-soluble polyacrylate and alkali-soluble phenolic resin. Specifically, it utilizes a mixture of alkali-soluble phenolic resin obtained through forced steam distillation at a low-temperature liquid surface with alkali-soluble polyacrylate. This not only improves the developing effect but also further enhances the thermal conductivity of the cured film, reduces the dielectric constant and dielectric loss tangent, making it more suitable for applications in semiconductor chips. Furthermore, compared to films obtained from other combinations of alkali-soluble resins, this invention also exhibits better mechanical strength and superior heat resistance.

[0027] To improve the uniformity and film thickness of the composition, the viscosity of the radiation-cured colloidal composition is preferably 1000–3000 mPa·s, and the mass-average molecular weight is 10000–120000.

[0028] The present invention also discloses a method for applying the radiation-cured colloidal composition to semiconductor chip integration, comprising the following steps:

[0029] (1) Apply the radiation-curing colloid composition to the substrate and dry the radiation-curing colloid composition in an oven at 50-150°C for 5-30 minutes to form a photosensitive colloid on the substrate.

[0030] (2) Expose the colloidal composition film using a corresponding mask according to the requirements of semiconductor surface packaging or multi-level stacking;

[0031] (3) Remove the exposed or unexposed portions of the colloidal composition with an alkaline solution to develop the colloidal composition;

[0032] (4) The developed colloidal composition is dried at 120-150°C for 30-120 min to obtain a cured film.

[0033] The radiation used for exposure includes ultraviolet light, visible light, electron beams, X-rays, etc.; preferably, a 365nm, 405nm or 436nm mercury lamp is used for exposure, which can cure quickly and is less likely to cause thermal effects on the substrate.

[0034] When the radiation-curable colloidal composition is used as a positive photosensitive resin composition, all or part of the exposed portion can be retained without removal, while when used as a negative photosensitive resin composition, all or part of all unexposed portions can be retained without removal.

[0035] The radiation-curable colloidal composition of the present invention only requires thermal curing at a relatively lower temperature than before, while significantly reducing residual stress generated in the cured coating and effectively suppressing warping of the semiconductor substrate.

[0036] The dried film thickness is preferably 0.1 to 100 μm, more preferably 5 to 30 μm. The radiation-cured colloidal composition of the present invention can form fine patterns, and the aspect ratio of the aperture diameter (Via diameter) of the pattern formed by the aforementioned exposure and development can be 0.3 or more, more preferably 0.5 or more. The aspect ratio of the aperture diameter (Via diameter) is expressed by the following formula: "Aspect ratio = (thickness of the cured film) / (aperture diameter of the through-hole formed in the cured film)".

[0037] The beneficial effects of this invention are:

[0038] The radiation-curable colloidal composition provided by this invention leverages the synergistic effect of multiple component mixed resins. The coating requires low curing temperature and consumes little energy. It exhibits high adhesion, low coefficient of thermal expansion, high ductility, low stress, high metal adhesion, high heat resistance, high thermal conductivity, and low dielectric loss. The resulting patterned film after development and curing has uniform thickness and high clarity, making it particularly suitable for semiconductor chip packaging and as an interlayer medium in multi-layer stacking. This significantly improves the productivity and yield of semiconductor substrates while extending product lifespan. Furthermore, this invention uses a high-boiling-point solvent and has a low curing temperature, resulting in almost no solvent evaporation during curing, making production more environmentally friendly. Detailed Implementation

[0039] The radiation-curable colloidal composition of the present invention is further illustrated by the following examples, but these examples do not constitute any limitation on the present invention.

[0040] Preparation Example 1: Alkali-soluble phenolic resin I

[0041] A mixture of 415 g of p-cresol and 184.2 g of 2,5-xylenol was placed in a four-necked flask equipped with a condenser, thermometer, and dropping funnel. 4.5 g of maleic anhydride and 405 g of propylene glycol methyl ether acetate were added, and the flask was heated to 98 °C. 319.6 g of formaldehyde was slowly added over 90 minutes. The reaction was continued at 98 °C for 5.5 hours. Unreacted reactants were removed by subsurface forced steam distillation at 100-140 °C. Strong steam was generated in another flask and passed below the surface of the reaction mixture; the distillate was collected in the flask, and steam distillation was continued for 1.5 hours. 505 g of propylene glycol methyl ether acetate was added while stirring. The resin in the propylene glycol methyl ether acetate was separated by adding electronic-grade propylene glycol methyl ether acetate, followed by vacuum distillation at 150 °C and 50 mm pressure to remove trace amounts of water. Alkali-soluble phenolic resin I with a molecular weight of 4140 (GPC) was obtained. The alkali dissolution rate was calculated per minute by measuring the difference in film thickness before and after development and the time required for dissolution. The alkali dissolution rate of this alkali-soluble phenolic resin was 7835 nm / min.

[0042] Preparation Example 2: Alkali-soluble phenolic resin II

[0043] A mixture of 428.4 g of m-cresol and 170.8 g of 3,5-xylenol was placed in a four-necked flask equipped with a condenser, thermometer, and dropping funnel. 4.5 g of maleic anhydride and 405 g of propylene glycol methyl ether acetate were added, and the flask was heated to 98°C. 315.3 g of formaldehyde was slowly added over 90 minutes. The reaction was continued at 98°C for 5.5 hours. Unreacted reactants were removed by subsurface forced steam distillation at 100°C–140°C. Strong steam was generated in another flask and passed below the surface of the reaction mixture; the distillate was collected in the flask, and steam distillation was continued for 1.5 hours. 505 g of propylene glycol methyl ether acetate was added while stirring. The resin in the propylene glycol methyl ether acetate was separated by adding electronic-grade propylene glycol methyl ether acetate, followed by vacuum distillation at 150°C and 50 mm pressure to remove trace amounts of water. Alkali-soluble phenolic resin II with a GPC molecular weight of 4218 was obtained. The alkali dissolution rate was calculated per minute by measuring the difference in film thickness before and after development and the time required for dissolution. The alkali dissolution rate of this alkali-soluble phenolic resin was 9137 nm / min.

[0044] Preparation Example 3: Alkali-soluble phenolic resin III

[0045] Under a dry nitrogen stream, 324.4 g (0.3 mol) of m-cresol, 757 g (0.7 mol) of p-cresol, 755 g (9.3 mol) of 37% formaldehyde aqueous solution, 6.3 g (0.05 mol) of oxalic acid dihydrate, and 2600 g of methyl isobutyl ketone were added. The mixture was then immersed in an oil bath, and a polycondensation reaction was carried out for 4 hours while the reaction solution was refluxed. After 3 hours, the temperature of the oil bath was increased, and then the pressure in the flask was reduced to 40–67 hPa to remove volatile components. The dissolved resin was then cooled to room temperature to obtain alkali-soluble phenolic resin III solid with a molecular weight of 3480 (GPC). The alkali dissolution rate of this alkali-soluble phenolic resin was 20433 nm / min.

[0046] Preparation Example 4: Alkali-soluble polyacrylate I

[0047] Weigh out the emulsifier (3g SDS and 3g NP-10) and dissolve it in 450g deionized water. The dissolved solution is then added to a four-necked flask equipped with a stirrer, condenser, thermometer, and dropping funnel. Weigh out 2.4g ammonium persulfate and dissolve it in 150g deionized water. Heat the system to 66℃, then add 20% of the mixed monomer pre-emulsion (60g MAA, 180g BA, 60g MMA, 6g chain transfer agent TPMS) and 30% of the initiator ammonium persulfate aqueous solution. Raise the temperature to 78℃ and hold for 30 minutes. Using a constant pressure funnel, simultaneously add the remaining mixed monomer pre-emulsion and the initiator ammonium persulfate aqueous solution, controlling the adding time to approximately 2 hours. After the addition is complete, raise the temperature to 82℃ and hold for 2 hours. Cool the mixture and discharge to obtain alkali-soluble polyacrylate I, with an alkali dissolution rate of 8247 nm / min.

[0048] Example 1

[0049] The radiation-curable colloidal composition comprises the following components in parts by weight: 20 parts of alkali-soluble polyacrylate I, 40 parts of alkali-soluble phenolic resin I, 9 parts of photoinitiator, 5 parts of thermal crosslinking agent, 40 parts of filler, 10 parts of additives, and 300 parts of solvent.

[0050] The thermal crosslinking agent was selected from the thermal crosslinking agent of Tianjin Tiantai Fine Chemicals Co., Ltd.

[0051] The photoinitiators are carbazole oxime ester photoinitiators and coumarin oxime ester photoinitiators, with a mass ratio of 1:1;

[0052] The filler is composed of silica, alumina, and talc in a mass ratio of 1:2:1, and the inorganic particles have a particle size of 100–300 nm.

[0053] The additives include leveling agents and silane coupling agents in a mass ratio of 2:1. The leveling agents are LAG-605 and BASF SConc; the silane coupling agents are trimethoxyaminopropylsilane and trimethoxyepoxysilane.

[0054] The solvent is γ-butyrolactone, N,N-dimethylformamide and cyclohexanone (weight ratio 1:1:1).

[0055] The viscosity of the radiation-cured colloidal composition is 3000 mPa·s, and the mass-average molecular weight is 10000–120000.

[0056] The method for preparing a radiation-curable colloidal composition includes the following steps: stirring each component evenly at 30-40°C.

[0057] Example 2

[0058] The radiation-curable colloidal composition comprises the following components in parts by weight: 35 parts of alkali-soluble polyacrylate I, 70 parts of alkali-soluble phenolic resin I, 12 parts of photoinitiator, 15 parts of thermal crosslinking agent, 60 parts of filler, 15 parts of additives, and 400 parts of solvent.

[0059] The thermal crosslinking agent was selected from Haining Hailong Chemical Co., Ltd.

[0060] The photoinitiators are coumarin oxime ester photoinitiators and thiophene ring dioxime ester photoinitiators, with a mass ratio of 1:1;

[0061] The filler is titanium oxide, aluminum oxide and talc in a mass ratio of 1:2:1, and the particle size of the inorganic particles is 100-300 nm.

[0062] The additives include silane coupling agents and surfactants in a 1:1 mass ratio. The silane coupling agents are trimethoxyepoxysilane and trimethoxyvinylsilane; the surfactants are Wacker PULPSIL 960S and BYK-345.

[0063] The solvents are γ-butyrolactone, N-methylpyrrolidone and butyl acetate (weight ratio 1:0.8:1).

[0064] The method for preparing a radiation-curable colloidal composition includes the following steps: stirring each component evenly at 30-40°C.

[0065] Example 3

[0066] The radiation-curable colloidal composition comprises the following components in parts by weight: 50 parts of alkali-soluble polyacrylate I, 100 parts of alkali-soluble phenolic resin II, 15 parts of photoinitiator, 30 parts of thermal crosslinking agent, 80 parts of filler, 30 parts of additives, and 500 parts of solvent.

[0067] The thermal crosslinking agent was selected from Shanghai Youen UN-577.

[0068] The photoinitiators are thiophene ring bioxime ester photoinitiators and thioxanone photoinitiators, with a mass ratio of 1:1;

[0069] The filler is silicon carbide, alumina and talc in a mass ratio of 1:2:1, and the particle size of the inorganic particles is 100-300 nm.

[0070] The additives include a leveling agent and a silane coupling agent in a mass ratio of 2:1. The leveling agent is BASF S Conc or German Minling LA411; the silane coupling agent is trimethoxyaminopropylsilane or trimethoxyvinylsilane.

[0071] The solvent is γ-butyrolactone, N,N-dimethylformamide and butyl acetate (weight ratio 1:1:0.9).

[0072] The method for preparing a radiation-curable colloidal composition includes the following steps: stirring each component evenly at 30-40°C.

[0073] Example 4

[0074] The radiation-curable colloidal composition comprises the following components in parts by weight: 35 parts of alkali-soluble polyacrylate I, 70 parts of alkali-soluble phenolic resin II, 12 parts of photoinitiator, 22 parts of thermal crosslinking agent, 60 parts of filler, 15 parts of additives, and 400 parts of solvent.

[0075] The thermal crosslinking agent was selected from Haining Hailong Chemical Co., Ltd.

[0076] The photoinitiators are coumarin oxime ester photoinitiators and thiophene ring dioxime ester photoinitiators, with a mass ratio of 1:1;

[0077] The filler is titanium oxide, aluminum oxide and talc in a mass ratio of 1:2:1, and the particle size of the inorganic particles is 100-300 nm.

[0078] The additives include silane coupling agents and surfactants in a mass ratio of 1:1. The silane coupling agents are trimethoxyepoxysilane and trimethoxyvinylsilane.

[0079] The solvent is γ-butyrolactone, N-methylpyrrolidone and butyl acetate (weight ratio 0.9:1:1.1).

[0080] The viscosity of the radiation-cured colloidal composition is 1000 mPa·s, and the mass-average molecular weight is 10000–120000.

[0081] The method for preparing a radiation-curable colloidal composition includes the following steps: stirring each component evenly at 30-40°C.

[0082] Comparative Example 1

[0083] The amount of alkali-soluble polyacrylate I in Example 2 was changed to 10 parts, and the amount of alkali-soluble phenolic resin I was changed to 95 parts, with the rest being the same as in Example 2.

[0084] Comparative Example 2

[0085] The alkali-soluble polyacrylate I in Example 2 was replaced with alkali-soluble polyimide, and the rest was the same as in Example 2.

[0086] Comparative Example 3

[0087] In Example 2, the alkali-soluble phenolic resin II was replaced with alkali-soluble phenolic resin III, and the rest was the same as in Example 2.

[0088] Comparative Example 4

[0089] The solvent in Example 2 was replaced with acetone, the amount of solvent remained the same, and everything else was the same as in Example 2.

[0090] Comparative Example 5

[0091] The thermal crosslinking agent in Example 2 was removed and the amount of solvent was changed to 422 parts, while the rest was the same as in Example 2.

[0092] Application examples

[0093] The radiation-curable colloidal compositions prepared in Examples 1-4 and Comparative Examples 1-5 were applied to the fabrication of semiconductor chip integration:

[0094] (1) Apply the radiation-curing colloid composition to the substrate and dry the radiation-curing colloid composition in an oven at 50-150°C for 5-30 minutes to form a photosensitive colloid on the substrate.

[0095] (2) Expose the colloidal composition film using a corresponding mask according to the requirements of semiconductor surface packaging or multi-level stacking;

[0096] (3) Remove the exposed or unexposed portions of the colloidal composition with an alkaline solution to develop the colloidal composition;

[0097] (4) The developed colloidal composition is dried at 120-150°C for 30-120 min to obtain a cured film.

[0098] The pre-baked substrate is placed on a mask with a preset pattern on the i-line stepper of the exposure machine, and then subjected to an exposure at 10 mJ / cm². 2 Exposure using a step-by-step method with an exposure dose of 100 mJ / cm². 2 After exposure, the substrate was developed using a 2.38% (w / w) tetramethylammonium hydroxide aqueous solution via a paddle method, with a draining time of 5 seconds. The development was repeated twice, followed by rinsing with deionized water and spin-drying. The developed substrate with the resin coating was then dried under a nitrogen atmosphere at 120–150°C for 30–120 minutes.

[0099] Table 1 shows the relevant performance test data of the obtained film.

[0100]

[0101] Appearance: Observe whether there are bubbles, whether the substrate is warped, whether there are gaps between the adhesive film and the substrate, and whether the surface of the adhesive film is rough.

[0102] Thermal conductivity: Measured using a TC3000 thermal conductivity measuring device.

[0103] Peel strength (PS): The peel strength of the copper foil was tested using the Suzhou Yano Tianxia CRS-CPT05 copper foil peel strength tester according to the method in IPC-TM-650 2.4.8.

[0104] Dielectric constant: The dielectric constant at 1 GHz was determined using the plate method according to IPC-TM-650 2.5.5.9.

[0105] Dielectric loss tangent: The dielectric loss factor at 1 GHz was determined using the planar method according to IPC-TM-650 2.5.5.9.

[0106] Elongation at break: determined by measurement using an SHK-A101 tensile tester at a temperature of 23°C and a tensile speed of 5 mm / min.

[0107] Heat resistance: The adhesive film peeled from the substrate is sandwiched between two copper foils and cured under pressure at 200℃ and 1MPa for 1 hour. It is then cut into 3cm square pieces and floated in a 280℃ solder bath for 60 seconds to observe whether bubbling occurs.

[0108] Film thickness uniformity: Film thickness was measured using a Keyence VK-X3000 film thickness measuring instrument. A length of 200 mm was selected, and 10 points were selected at 20 mm intervals along the length to measure the edge film thickness. Edge film thickness = measured film thickness - preset film thickness. The number of points for edge film thickness ≤ 200 nm was 9-10: A; the number of points for edge film thickness ≤ 200 nm was 6-8: B; the number of points for edge film thickness ≤ 200 nm was 3-5: C; and the number of points for edge film thickness ≤ 200 nm was 0-2: D.

[0109] Coefficient of thermal expansion: The adhesive film peeled from the substrate is laminated to a thickness of 2 mm and cured under pressure at 200℃ and 1 MPa for 1 hour. It is then cut into 5 mm square sheets, and the coefficient of thermal expansion in the thickness direction is measured using the Xiangke ZRPY-III thermal expansion meter.

[0110] As can be seen from the table above, compared with Comparative Examples 1, 3, 4 and 5, the formulation of the colloidal composition of the present invention in Example 2 makes the film have excellent performance in terms of thermal conductivity, insulation, peel strength, toughness and heat resistance, and the finished product production rate is high. Compared with Comparative Example 2, Example 2 can achieve the same or partially superior performance of similar products at a lower thermosetting temperature and energy consumption.

[0111] The above embodiments are only used to illustrate the technical solutions of the present invention, and are not intended to limit it. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications may still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions may be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A radiation-curable colloidal composition for semiconductor chip integration, characterized in that, It comprises the following components in parts by weight: 20-50 parts of alkali-soluble polyacrylate, 40-100 parts of alkali-soluble phenolic resin, 9-15 parts of photoinitiator, 5-30 parts of thermal crosslinking agent, 40-80 parts of filler, 0.1-30 parts of additives, and 300-500 parts of solvent. The solvent has a boiling point of 150–230°C and includes two or more of γ-butyrolactone, N,N-dimethylformamide, cyclohexanone, N-methylpyrrolidone, and butyl acetate. The alkali-soluble phenolic resin is obtained by forced steam distillation at a liquid surface of 100℃-140℃. The alkali dissolution rate of the alkali-soluble polyacrylate and the alkali dissolution rate of the alkali-soluble phenolic resin are 0.5 to 1.5:

1. The alkali dissolution rate is calculated per minute by measuring the difference in film thickness before and after development and the time required for dissolution. The dissolution rate of the alkali-soluble phenolic resin is 1000 to 20000 nm / min.

2. The radiation-curable colloidal composition according to claim 1, characterized in that, The photoinitiator is one or more of carbazole oxime ester photoinitiators, coumarin oxime ester photoinitiators, thiophene cyclobisoxime esters, and thioxanone photoinitiators; the filler is inorganic particles.

3. The radiation-curable colloidal composition according to claim 2, characterized in that, The inorganic particles are highly thermally conductive inorganic particles, including one or more of silicon oxide, titanium oxide, silicon carbide, aluminum oxide, and talc, with a particle size of 100–300 nm.

4. The radiation-curable colloidal composition according to claim 1, characterized in that, The additives include one or more of leveling agents, silane coupling agents, and surfactants.

5. The radiation-curable colloidal composition according to claim 1, characterized in that, The viscosity of the radiation-curable colloidal composition is 1000–3000 mPa·s, and the mass-average molecular weight is 10000–120000.

6. A method for applying the radiation-cured colloidal composition of claim 1 to semiconductor chip integration, characterized in that, Includes the following steps: (1) Apply the radiation-curable colloid composition to the substrate and dry the radiation-curable colloid composition in an oven at 50-150°C for 5-30 min to form a photosensitive colloid on the substrate; (2) Expose the colloidal composition film using a corresponding mask according to the requirements of semiconductor surface packaging or multi-level stacking; (3) Remove the exposed or unexposed portions of the colloidal composition with an alkaline solution to develop the colloidal composition; (4) Dry the developed colloidal composition at 120-150°C for 30-120 min to obtain a cured film.

7. The method for semiconductor chip integration according to claim 6, characterized in that, Exposure was performed using a 365nm, 405nm, or 436nm mercury lamp, and the film thickness after drying ranged from 0.1 to 100 μm.

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