Organic el device and method for manufacturing the same

Abstract

The organic EL device (100) according to the embodiment includes an element substrate (20) having a substrate (1) and a plurality of organic EL elements (3) supported by the substrate, a thin film encapsulation structure (10) formed on the plurality of organic EL elements, the thin film encapsulation structure (10) having at least one composite layer stack (10S) composed of a first inorganic barrier layer (12), an organic barrier layer (14) in contact with an upper surface of the first inorganic barrier layer, and a second inorganic barrier layer (16) in contact with an upper surface of the first inorganic barrier layer and an upper surface of the organic barrier layer, an organic planarization layer (42) formed of a photosensitive resin provided on the thin film encapsulation structure, and a touch sensing layer (50) disposed on the organic planarization layer.

Description

Technical Field

[0001] The present invention relates to an organic EL device (eg, an organic EL display device and an organic EL lighting device) and a method for manufacturing the same. Background Art

[0002] Organic EL (Electro Luminescence) display devices have begun to be put into practical use. One of the characteristics of organic EL display devices is that they can be flexible display devices. Organic EL display devices have at least one organic EL element (Organic Light Emitting Diode: OLED) for each pixel and at least one TFT (Thin Film Transistor) that controls the current supplied to each OLED. Hereinafter, organic EL display devices are referred to as OLED display devices. Such OLED display devices in which each OLED has a switching element such as a TFT are called active matrix OLED display devices. In addition, the substrate on which the TFT and OLED are formed is called an element substrate.

[0003] OLED (especially the organic light-emitting layer and cathode electrode materials) are easily affected by moisture and degraded, and are also prone to uneven display. As a technology to protect OLED from moisture and provide a packaging structure that does not damage flexibility, a thin film encapsulation technology (Thin Film Encapsulation: TFE) has been developed. Thin film encapsulation technology is a technology that obtains sufficient vapor barrier properties through the stacking of inorganic barrier layers and organic barrier layers. From the perspective of moisture resistance of OLED display devices, the WVTR (Water Vapor Transmission Rate: WVTR) of the thin film encapsulation structure is generally required to be less than 1×10 -4 g / m 2 / day.

[0004] Currently commercially available thin-film encapsulation structures used in OLED displays feature an organic barrier layer (polymer barrier layer) approximately 5 to 20 μm thick. This relatively thick organic barrier layer flattens the surface of the device substrate. However, a thicker organic barrier layer can limit the flexibility of the OLED display.

[0005] In addition, there is also the problem of low mass production. The thicker organic barrier layer is formed using printing technologies such as inkjet and micro-spray. On the other hand, the inorganic barrier layer is formed using thin film forming technology in a vacuum environment (for example, less than 1 Pa). Since the formation of the organic barrier layer using printing technology is carried out in air or nitrogen environment, and the formation of the inorganic barrier layer is carried out in a vacuum, the component substrate is taken in and out of the vacuum container during the process of forming the thin film encapsulation structure, and mass production is low.

[0006] Here, for example, as disclosed in Patent Document 1, a film forming apparatus has been developed that can continuously produce an inorganic barrier layer and an organic barrier layer.

[0007] In addition, patent document 2 discloses a thin film packaging structure, which makes the first resin material uneven around the convex portion of the first inorganic material layer (the first inorganic material layer covering the convex portion) when forming the first inorganic barrier layer, the first resin material and the second inorganic material layer in sequence from the element substrate side. According to patent document 2, the first resin material is unevenly distributed around a certain convex portion that may not be fully covered by the first inorganic material layer, thereby suppressing the intrusion of moisture or oxygen from this part. In addition, by making the first resin material act as the base layer of the second inorganic material layer, the second inorganic material layer is properly formed into a film and can properly cover the side of the first inorganic material layer with the desired film thickness. The first resin material is formed as follows. A mist-like organic material that is heated and vaporized is provided to the element substrate maintained at a temperature below room temperature, and the organic material condenses and drops on the substrate. The droplet-shaped organic material moves on the substrate by capillary action or surface tension and is unevenly distributed on the side of the convex portion of the first inorganic material layer and the boundary portion of the substrate surface. Thereafter, the first resin material is formed at the boundary portion by solidifying the organic material. Patent Document 3 also discloses an OLED display device having a similar thin film encapsulation structure. In addition, Patent Document 4 discloses a film forming apparatus for manufacturing an OLED display device.

[0008] The thin-film encapsulation structure described in Patent Documents 2 or 3, which includes an organic barrier layer composed of unevenly distributed resin, is believed to improve the bendability of OLED displays by eliminating the need for a thick organic barrier layer. Furthermore, since the inorganic and organic barrier layers can be formed continuously, mass production is also improved.

[0009] However, according to the inventors' research, forming an organic barrier layer using the method described in Patent Documents 2 or 3 results in insufficient moisture-resistant reliability. It has been discovered that this problem is caused by atmospheric water vapor passing through the organic barrier layer and reaching the active region (also referred to as the "device formation region" or "display region") on the device substrate.

[0010] When the organic barrier layer is formed using a printing method such as an inkjet method, it can be formed only in the active area (also called the "element formation area" or "display area") of the device substrate, and not in areas other than the active area. Therefore, around (outside) the active area, there is an area where the first and second inorganic material layers are in direct contact, and the organic barrier layer is completely surrounded by the first and second inorganic material layers, isolating it from the surrounding area.

[0011] In this regard, in the method for forming an organic barrier layer described in Patent Document 2 or 3, a resin (organic material) is provided to the entire element substrate, and the surface tension of the liquid resin is utilized to cause the resin to be unevenly distributed on the side surfaces of the convex portions of the surface of the element substrate and on the boundary portions of the substrate surface. Therefore, an organic barrier layer is also formed in the area other than the active area (also referred to as the "peripheral area"), that is, the terminal area where a plurality of terminals are configured, and the lead-out wiring area where lead-out wiring is formed from the active area to the terminal area. Specifically, for example, the resin is unevenly distributed on the side surfaces of the lead-out wiring and the terminal and on the boundary portions of the substrate surface. In this way, part of the end portion of the organic barrier layer formed along the lead-out wiring is not surrounded by the first inorganic barrier layer and the second inorganic barrier layer, but is exposed to the air (surrounding environment).

[0012] Since the organic barrier layer has lower water vapor barrier properties than the inorganic barrier layer, the organic barrier layer formed along the lead wiring becomes a path that guides water vapor in the air into the active region.

[0013] Furthermore, a thin film encapsulation structure having an organic barrier layer made of a conventional non-uniform resin also has the following problems.

[0014] For example, in an OLED display device having a touch panel function used in a smartphone or tablet terminal, as described in Patent Document 5, the organic barrier layer of the thin film encapsulation structure is relatively thick and acts as a planarization layer, and a touch sensing layer (also referred to as a "touch screen layer") is provided on the flat surface of the thin film encapsulation structure via a connection layer. In such a structure in which a touch sensing layer is provided on a thin film encapsulation structure, as described in Patent Documents 2 or 3, if a thin film encapsulation structure having a relatively thin organic barrier layer is used, when particles (foreign matter) are present in the thin film encapsulation structure, strain will be generated in the touch sensing layer because the top surface of the thin film encapsulation structure becomes uneven, resulting in a problem of reduced touch panel function. For example, in a resistive film touch sensor having a fine gap between a pair of electrodes and a projected electrostatic capacitance touch sensor that detects capacitance changes between electrodes, it is possible that a location where particles are present may be mistakenly identified as a touched location.

[0015] Here, the problem of a thin film encapsulation structure applicable to a flexible OLED display device is described. However, the thin film encapsulation structure is not limited to OLED display devices, and can also be used in other organic EL devices such as organic EL lighting devices.

[0016] Prior art literature

[0017] Patent Literature

[0018] Patent Document 1: Japanese Patent Application Laid-Open No. 2013-186971

[0019] Patent Document 2: International Publication No. 2014 / 196137

[0020] Patent Document 3: Japanese Patent Application Laid-Open No. 2016-39120

[0021] Patent Document 4: Japanese Patent Application Laid-Open No. 2013-64187

[0022] Patent Document 5: U.S. Patent Application Publication No. 2016 / 226021 Summary of the Invention

[0023] Problems to be solved by the invention

[0024] The present invention is made to solve the above-mentioned problems, and its purpose is to provide an organic EL device and a manufacturing method thereof, which has a thin film encapsulation structure with a thin organic barrier layer that improves mass production and moisture resistance reliability, while suppressing the degradation of touch panel function.

[0025] Solutions to the Problem

[0026] In an organic EL device according to an embodiment of the present invention, the organic EL device includes: an element substrate having a substrate and a plurality of organic EL elements supported by the substrate; a thin film encapsulation structure formed on the plurality of organic EL elements, the thin film encapsulation structure having at least one composite laminate composed of a first inorganic barrier layer, an organic barrier layer, and a second inorganic barrier layer, the organic barrier layer being in contact with an upper surface of the first inorganic barrier layer, and the second inorganic barrier layer being in contact with the upper surface of the first inorganic barrier layer and the upper surface of the organic barrier layer; an organic planarization layer provided on the thin film encapsulation structure and composed of a photosensitive resin; a touch sensing layer disposed on the organic planarization layer; a driving circuit supported by the substrate; a plurality of terminals disposed in a peripheral region; and a plurality of lead wires connecting the driving circuit and the plurality of terminals, wherein the thin film encapsulation structure The first inorganic barrier layer is selectively formed on at least an active region where the plurality of organic EL elements are arranged and a portion of the plurality of lead wires on the active region side, and contacts at least a portion of the plurality of lead wires. In portions of the plurality of lead wires in contact with the thin film encapsulation structure, a side surface taper angle of a cross-section parallel to the line width direction of the plurality of lead wires is less than 90°. The thin film encapsulation structure includes an inorganic barrier layer junction portion, in which the organic barrier layer is not present, and in which the first inorganic barrier layer and the second inorganic barrier layer are in direct contact. The inorganic barrier layer junction portion is formed in a region including the tapered portion of each of the plurality of lead wires, and the inorganic barrier layer junction portion completely surrounds the active region. A "solid portion" refers to a portion of the organic barrier layer where an organic film (e.g., a photocurable resin film) actually exists. Conversely, a portion where no organic film exists is referred to as a non-solid portion. A non-solid portion surrounding a solid portion may sometimes be referred to as an opening.

[0027] In one embodiment, the plurality of solid portions of the organic barrier layer include a plurality of solid portions, and the plurality of solid portions have concave surfaces.

[0028] In one embodiment, the organic barrier layer is formed of a photocurable resin (a material for curing a photocurable resin). The photocurable resin is preferably an ultraviolet curable resin, such as an acrylic resin (acrylic monomer (including oligomer)).

[0029] In one embodiment, the first and second inorganic barrier layers are each independently SiN with a thickness greater than 200 nm and less than 1000 nm. x layer.

[0030] In one embodiment, the photosensitive resin is negative.

[0031] In one embodiment, the thickness of the organic planarization layer does not exceed 15 μm. For example, the thickness of the organic planarization layer is greater than 3 μm.

[0032] In one embodiment, the photosensitive resin comprises silicone resin. The photosensitive resin may also be acrylic resin.

[0033] In one embodiment, the transmittance of the organic planarization layer to light at 350 nm is greater than 80%.

[0034] In one embodiment, the elastic modulus of the photosensitive resin at 0° C. does not exceed 400 MPa.

[0035] In one embodiment, an inorganic insulating layer covering the organic planarization layer is further provided, and the touch sensing layer is formed on the inorganic insulating layer. The inorganic insulating layer is, for example, SiN x The SiN layer x The thickness of the layer is, for example, greater than 200 nm and less than 1000 nm.

[0036] In one embodiment, the organic planarization layer covers at least the entire active area where the plurality of organic EL elements are arranged, and is formed in a larger area than the touch sensing layer.

[0037] In one embodiment, the organic planarization layer covers the entire device substrate.

[0038] In one embodiment, the device further comprises a drive circuit supported by the substrate, a plurality of terminals arranged in a peripheral region, and a plurality of lead wires connected to the drive circuit and the plurality of terminals. The thin film encapsulation structure is provided on portions of the lead wires facing the drive circuit. The organic barrier layer is absent from portions of the lead wires, but rather includes an inorganic barrier layer junction where the first inorganic barrier layer and the second inorganic barrier layer are in direct contact. The taper angle of the side surface of the cross-section parallel to the width direction of the lead wires is preferably less than 90°, and the taper angle of the side surface of the first inorganic barrier layer is preferably less than 70°. The length of the inorganic barrier layer junction is preferably at least 0.01 nm.

[0039] The organic EL manufacturing method involved in a certain embodiment of the present invention is a method for manufacturing any one of the organic EL devices, and the process of forming the organic planarization layer includes: process A, preparing the element substrate with the thin film packaging structure; process B, applying a liquid containing a negative photosensitive resin to the element substrate in a manner that at least covers the thin film packaging structure; process C, irradiating light to the entire photosensitive resin on the element substrate.

[0040] In one embodiment, the liquid is applied only to a predetermined area on the device substrate in the step B. The step B can be performed, for example, by a known printing method (eg, inkjet printing or screen printing).

[0041] Another embodiment of the present invention relates to a method for manufacturing an organic EL device, wherein the step of forming the organic planarization layer includes: step A, preparing the element substrate having the thin-film encapsulation structure formed thereon; step B, applying a liquid containing a negative photosensitive resin to the element substrate so as to at least cover the thin-film encapsulation structure; step C, selectively irradiating light onto the photosensitive resin in a predetermined area on the element substrate, or in areas other than the predetermined area; and step D, after step C, exposing the photosensitive resin to a developer. Step B may also be a step of applying the liquid containing the photosensitive resin to the entire element substrate. In this case, the step of connecting an external substrate to the plurality of terminals of the element substrate may also be included before step B.

[0042] In one embodiment of the present invention, the step of forming the at least one composite laminate includes the steps of preparing the element substrate having the first inorganic barrier layer formed thereon into a container, supplying vapor or mist of a photocurable resin into the container, condensing the photocurable resin onto the first inorganic barrier layer to form a liquid film, irradiating the liquid film of the photocurable resin with light to form a photocurable resin layer, and partially ashing the photocurable resin layer to form the organic barrier layer. By adjusting the thickness of the liquid film and / or the ashing conditions, the area and thickness of the remaining photocurable resin can be adjusted.

[0043] In one embodiment, the ashing device is performed by a plasma ashing method using at least one gas selected from N2O, O2, and O3.

[0044] In one embodiment, the step of forming the at least one composite laminate may also include forming the organic barrier layer using the method described in Patent Documents 2 or 3. This method allows the photocurable resin to be unevenly distributed at the boundary between the side surfaces (taper angle greater than 90°) of the convex portion and the flat portion of the first inorganic barrier layer. The taper angle of the side surface of the cross-section parallel to the width direction of the plurality of lead wires is preferably less than 90°, and the taper angle of the side surface of the first inorganic barrier layer is preferably less than 70°.

[0045] Beneficial effects

[0046] According to an embodiment of the present invention, a method for manufacturing an organic EL device is provided, which has a thin film encapsulation structure with a thin organic barrier layer that improves mass productivity and moisture resistance reliability, while suppressing degradation of touch panel function. BRIEF DESCRIPTION OF THE DRAWINGS

[0047] Figure 1 (a) is a schematic partial cross-sectional view of an active region of an OLED display device 100 according to an embodiment of the present invention, and (b) is a partial cross-sectional view of a TFE structure 10 formed on an OLED 3 .

[0048] Figure 2 1 is a plan view schematically showing the structure of the OLED display device 100 according to the embodiment of the present invention (under the TFE structure 10 ).

[0049] Figure 3 (a) and (b) are plan views schematically showing the structures (on the TFE structure 10) of OLED display devices 100A and 100B according to the embodiments of the present invention, respectively.

[0050] Figure 4 (a) to (c) are Figure 3 (a) is a schematic cross-sectional view of an OLED display device 100A, wherein (a) is a cross-sectional view taken along Figure 3 The cross-sectional view along the line 4A-4A' in FIG. 4A-4A', (b) is a cross-sectional view along the line 4A-4A' in FIG. Figure 3 The cross-sectional view along the line 4B-4B' in FIG. (c) is a cross-sectional view along the line 4B-4B' in FIG. Figure 3 (d) is a cross-sectional view of the OLED display device 100C of the comparative example, and (d) is a cross-sectional view along the line 4C-4C' of the comparative example. Figure 3 The cross-sectional view corresponds to the line 4B-4B'.

[0051] Figure 5 (a) and (b) are diagrams schematically showing the structure of a touch sensing layer 50A that may be included in an OLED display device according to an embodiment of the present invention.

[0052] Figure 6 (a) and (b) are diagrams schematically showing the structure of another touch sensing layer 50B that may be included in the OLED display device 1 according to the embodiment of the present invention.

[0053] Figure 7 (a) and (b) are schematic cross-sectional views each showing an example of a TFT that can be included in the OLED display device according to the embodiment of the present invention.

[0054] Figure 8 (a) and (b) are schematic cross-sections of another OLED display device according to the embodiment, respectively. Figure 4 (a) and (c) correspond to each other.

[0055] Figure 9 (a) and (b) are diagrams schematically showing the configuration of the film forming apparatus 200 . DETAILED DESCRIPTION

[0056] Hereinafter, an OLED display device and a method for manufacturing the same according to an embodiment of the present invention will be described with reference to the accompanying drawings.

[0057] Reference Figure 1 (a) and (b) illustrate the basic structure of the OLED display device 100 according to the embodiment of the present invention. Figure 1 (a) is a schematic partial cross-sectional view of the active region of the OLED display device 100 according to an embodiment of the present invention. Figure 1 (b) is a partial cross-sectional view of the TFE structure 10 formed on the OLED 3 .

[0058] The OLED display device 100 includes a plurality of pixels, each of which includes at least one organic EL element (OLED). For simplicity, the structure corresponding to one OLED will be described below.

[0059] like Figure 1 As shown in (a), the OLED display device 100 has: a flexible substrate (hereinafter sometimes referred to as a "substrate") 1, a circuit (backplane) 2 including TFTs formed on the substrate 1, an OLED 3 formed on the circuit 2, and a TFE structure 10 formed on the OLED 3. The OLED 3 is, for example, a top emission type. The uppermost part of the OLED 3 is, for example, an upper electrode or a cover layer (refractive index adjustment layer). The OLED display device 100 also has an organic planarization layer 42 formed of a photosensitive resin and arranged on the thin film encapsulation structure 10, an inorganic insulating layer 44 covering the organic planarization layer 42, and a touch sensing layer 50 arranged on the inorganic insulating layer 44. The inorganic insulating layer 44 can also be omitted. An optional polarizer 4 is arranged on the touch sensing layer 50. The polarizer 4 can also be arranged between the TFE structure 10 and the touch sensing layer 50 (for example, between the organic planarization layer 42 and the touch sensing layer 50). The polarizing plate 4 is a circular polarizing plate (a laminate of a linear polarizing plate and a λ / 4 plate), which, as is known to the public, has an anti-reflection effect. From the perspective of anti-reflection, the polarizing plate 4 is preferably disposed on the touch sensor layer 50 as shown in the figure.

[0060] For example, the substrate 1 is a polyimide film with a thickness of 15 μm. For example, the thickness of the circuit 2 including the TFT is 4 μm, the thickness of the OLED 3 is 1 μm, and the thickness of the TFE structure 10 is less than 1.5 μm. For example, the thickness of the organic planarization layer 42 is greater than 3 μm and less than 15 μm. For example, the non-edge insulating layer 44 is SiN x For example, SiN x The thickness of the layer is greater than 200 nm and less than 1000 nm.

[0061] Figure 1 (b) is a partial cross-sectional view of the TFE structure 10 formed on the OLED 3. A first inorganic barrier layer (eg SiN x An organic barrier layer (eg, an acrylic resin layer) 14 is formed on the first inorganic barrier layer 12, and a second inorganic barrier layer (eg, SiN x layer)16.

[0062] The organic barrier layer 14 has multiple dispersed solid portions that contact the top surface of the first inorganic barrier layer 12. A "solid portion" refers to a portion of the organic barrier layer 14 where an organic film (e.g., a photocurable resin film) actually exists. Conversely, a portion where no organic film exists is referred to as a non-solid portion. Non-solid portions surrounding a solid portion are sometimes referred to as openings. The second inorganic barrier layer 16 contacts the top surface of the first inorganic barrier layer and the upper portions of the multiple solid portions of the organic barrier layer 14. That is, the second inorganic barrier layer 16 directly contacts the first inorganic barrier layer 12 within the non-solid portions of the organic barrier layer 14.

[0063] The TFE structure 10 is used to protect the active area of ​​the OLED display device 100 (refer to Figure 2 The organic barrier layer 14 is formed so as to surround the active region R1. Furthermore, the non-solid portion of the organic barrier layer 14 includes at least a continuous portion that surrounds the active region R1. The active region R1 is completely surrounded by the portion where the first inorganic barrier layer 12 and the second inorganic barrier layer 16 directly contact each other (hereinafter referred to as the "inorganic barrier layer junction"). Therefore, the solid portion of the organic barrier layer 14 does not become a path for moisture.

[0064] The laminated structure is referred to as a composite laminate (10S). The laminated structure includes the first inorganic barrier layer 12 and the second inorganic barrier layer 16 of the TFE structure 10. The second inorganic barrier layer 16 is in contact with the upper surface of the first inorganic barrier layer 12 and the upper surfaces of the multiple solid portions of the organic barrier layer 14. While the TFE structure 10 is composed of a single composite laminate 10S, it is not limited thereto and may include two or more composite laminates 10S, and may further include an organic insulating layer and / or an inorganic insulating layer. If the TFE structure includes the composite laminate 10S as the topmost layer, highly reliable packaging can be achieved.

[0065] For example, the first inorganic barrier layer 12 and the second inorganic barrier layer 16 are SiN with a thickness of 400 nm. x The organic barrier layer 14 is, for example, an acrylic resin layer with a thickness of less than 100 nm.

[0066] The thickness of the first inorganic barrier layer 12 and the second inorganic barrier layer 16 are preferably independent of each other, for example, greater than 200 nm and less than 1500 nm, preferably less than 1000 nm. For example, the thickness of the organic barrier layer 14 is greater than 10 nm and less than 500 nm, preferably greater than 50 nm and less than 300 nm. If the thickness is less than 50 nm, the effect of the organic barrier layer 14 will not be fully realized. Conversely, if the thickness is greater than 500 nm, the effect of the organic barrier layer 14 will be saturated, increasing manufacturing costs. The thickness of the composite laminate 10S is preferably greater than 500 nm and less than 2000 nm.

[0067] Here, the thickness of the organic barrier layer 14 is referred to as the thickness of the flat portion. Since the photocurable resin film used to form the organic barrier layer 14 forms a flat (horizontal) surface, if the substrate has concave portions, the film thickness increases in those portions. Furthermore, since the film forms a curved surface due to surface tension (including capillary action), the film thickness increases around convex portions. This locally increased thickness can also exceed 500 nm.

[0068] The thickness of the composite laminate 10S is preferably greater than 400 nm and less than 2 μm, and more preferably greater than 400 nm and less than 1.5 μm.

[0069] The TFE structure 10 may also form an inorganic insulating layer and / or an organic insulating layer below the composite laminate 10S, above the composite laminate 10S, or between two composite laminates 10S. In this case, the thickness of the inorganic insulating layer is preferably, for example, greater than 400 nm and less than 1500 nm. When the thickness of the inorganic insulating layer is less than 400 nm, for example, smaller particles with a diameter of less than about 0.5 μm may exist, so the barrier properties may be reduced. When the thickness of the inorganic insulating layer is greater than 1500 nm, the barrier properties are saturated, and the relative film stress increases, resulting in warping of the substrate.

[0070] The thickness of the organic insulating layer, for example, when formed using a conventional inkjet method, is preferably greater than 5 μm and less than 20 μm. Using the inkjet method, it is difficult to form a uniform organic insulating layer with a thickness of less than 5 μm. On the other hand, when the thickness of the organic insulating layer exceeds 20 μm, the consumption of expensive materials increases, and the manufacturing cost also increases. Alternatively, the structure (dam) used to block the organic material applied by the inkjet method at a predetermined position needs to be made higher, which complicates the manufacturing process.

[0071] Next, refer to Figures 2 to 4 The structure of the OLED display device according to the embodiment of the present invention will be described in further detail. Hereinafter, the TFE structure 10 is described as an example in which a composite laminate 10S is used to form the TFE structure 10 .

[0072] First, refer to Figure 2 . Figure 2 1 is a plan view schematically showing the structure of the OLED display device 100 according to the embodiment of the present invention (under the TFE structure 10 ).

[0073] Circuit 2 formed on substrate 1 includes multiple TFTs (not shown), multiple gate bus lines (not shown) connected to any of the multiple TFTs (not shown), and multiple source bus lines (not shown). Circuit 2 may also be a known circuit for driving multiple OLEDs 3. Multiple OLEDs 3 are connected to any of the multiple TFTs included in circuit 2. OLEDs 3 may also be known OLEDs.

[0074] The circuit 2 further includes a plurality of terminals 34 and a plurality of lead wirings 32. The plurality of terminals 34 are arranged in an active region (where a plurality of OLEDs 3 are arranged) of the circuit 2. Figure 2The plurality of lead lines 32 are arranged in a peripheral region R2 outside of the active region R1 (the region enclosed by the dotted line). The plurality of lead lines 32 are connected to the plurality of terminals 34 and any one of the plurality of gate bus lines or the plurality of source bus lines. The circuit 2 including the plurality of TFTs, the plurality of gate bus lines, the plurality of source bus lines, the plurality of lead lines 32, and the plurality of terminals 34 is collectively referred to as the drive circuit layer 2. Furthermore, within the drive circuit layer 2, the portion formed within the active region R1 is designated as the drive circuit layer 2A.

[0075] In addition, Figure 2 In the figure, as the components of the driving circuit layer 2, there is a case where only the lead wiring 32 and / or the terminal 34 are shown in the figure. However, the driving circuit layer 2 has not only a conductive layer including the lead wiring 32 and the terminal 34, but also one or more conductive layers, one or more insulating layers, and one or more semiconductor layers. The structure of the conductive layer, insulating layer, and semiconductor layer included in the driving circuit layer 2 can be changed by, for example, Figure 7 Alternatively, an insulating film (base film) may be formed on the substrate 1 to serve as a base film for the driving circuit layer 2.

[0076] The TFE structure 10 (composite laminate 10S) is formed in a manner to protect the active region R1. For example, the first inorganic barrier layer 12 and the second inorganic barrier layer 16 are SiN x The first inorganic barrier layer 12 and the second inorganic barrier layer 16 are selectively formed in a predetermined area by a plasma CVD method using a mask so as to cover the active region R1. Here, the first inorganic barrier layer 12 and the second inorganic barrier layer 16 are independently and selectively formed on the active region R1 and on the portions of the plurality of lead lines 32 on the active region R1 side. Furthermore, from the perspective of reliability, the second inorganic barrier layer 16 is identical to the first inorganic barrier layer 12 (with the outer edges aligned), and is preferably formed so as to cover the entire first inorganic barrier layer 12. The periphery of the active region R1 is surrounded by an inorganic barrier layer junction portion that is in direct contact with the first inorganic barrier layer 12 and the second inorganic barrier layer 16.

[0077] The organic barrier layer 14 can be formed, for example, by the methods described in Patent Documents 2 or 3. For example, a vapor or mist of an organic material (e.g., an acrylic monomer) is supplied to a device substrate maintained at a temperature below room temperature within a container and condensed on the device substrate. The capillary action or surface tension of the liquid organic material causes the boundary between the side surfaces of the protrusions and the flat portion of the first inorganic barrier layer 12 to become uneven. Subsequently, for example, by irradiating the organic material with ultraviolet light, a solid portion of the organic barrier layer (e.g., an acrylic resin layer) 14 is formed at the boundary around the protrusions. The organic barrier layer 14 formed by this method does not actually have a solid portion on the flat portion. Regarding the method for forming the organic barrier layer, the disclosures of Patent Documents 2 and 3 are incorporated herein by reference.

[0078] As will be described later, the organic barrier layer 14 can also be formed by adjusting the initial thickness of the resin layer formed using the film forming apparatus 200 (e.g., to less than 100 nm) and / or by ashing the temporarily formed resin layer. For example, the ashing apparatus can be formed by performing plasma ashing using at least one gas selected from N2O, O2, and O3.

[0079] Next, refer to Figure 3 (a) and Figure 3 (b). Figure 3 (a) is a plan view schematically showing the structure of the OLED display device 100A according to the embodiment of the present invention (on the TFE structure 10). Figure 3 (b) is a plan view schematically showing the structure of the OLED display device 100B according to the embodiment of the present invention (on the TFE structure 10 ).

[0080] Figure 3 The OLED display device 100A shown in (a) has an organic planarization layer 42A and a touch sensing layer 50 on the TFE structure 10. The organic planarization layer 42A is formed of a photosensitive resin, and the touch sensing layer 50 is disposed on the organic planarization layer 42A. An inorganic insulating layer ( Figure 1 The organic planarization layer 42A is formed only in a predetermined area on the element substrate and is formed so that the terminal 34 and the lead wiring 32 near the terminal 34 are exposed. The organic planarization layer 42A can also be formed so as to cover at least the TFE structure 10. The organic planarization layer 42A preferably covers at least the entire active area R1 and is formed over a wider area than the touch sensing layer 50.

[0081] For example, the organic planarization layer 42A may be formed as follows.

[0082] A liquid containing a negative photosensitive resin is applied only to a predetermined area on the element substrate forming the TFE structure 10. The entire photosensitive resin on the element substrate is then irradiated with light. If necessary, the solvent can be removed by heating (pre-drying) before light irradiation. Furthermore, after light irradiation, the photosensitive resin can be further cured by heating. For example, the process of applying the liquid containing the photosensitive resin can be performed using a known printing method (e.g., inkjet printing or screen printing). This method eliminates the need for a photomask and eliminates the need for developing the exposed photosensitive resin.

[0083] Alternatively, a liquid containing a negative photosensitive resin is applied to the entire surface of the element substrate on which the TFE structure 10 is formed, and the photosensitive resin in a predetermined area of ​​the element substrate is selectively irradiated with light. Alternatively, a liquid containing a positive photosensitive resin is applied to the entire surface of the element substrate on which the TFE structure 10 is formed, and the photosensitive resin in areas other than the predetermined area is selectively irradiated with light. The photosensitive resin is then brought into contact with a developer, and development is performed to form the organic planarizing layer 42A only in the predetermined area.

[0084] Figure 3 The OLED display device 100B described in (b) has an organic planarization layer 42B and a touch sensing layer 50 on the TFE structure 10. The organic planarization layer 42B is formed of a photosensitive resin, and the touch sensing layer 50 is disposed on the organic planarization layer 42B. The OLED display device 100B differs from the OLED display device 100A in that the organic planarization layer 42B covers the entire element substrate. Furthermore, an inorganic insulating layer ( Figure 1 inorganic insulating layer 44).

[0085] For example, the organic planarization layer 42B may be formed as follows.

[0086] A liquid containing a negative or positive photosensitive resin is applied to the entire surface of the element substrate on which the TFE structure 10 is formed, exposed using a photomask, and developed to obtain an organic planarization layer 42B having openings 42a exposing the terminals 34. If the terminals 34 are connected to the external substrate first, the openings 42a do not need to be formed, and therefore, a photomask is not required.

[0087] The thickness of the organic planarization layers 42A and 42B is preferably no more than 15 μm. If it exceeds 15 μm, the bendability may be reduced. From the perspective of the planarization function in the presence of particles, the thickness of the organic planarization layers 42A and 42B is preferably greater than 3 μm, for example.

[0088] The photosensitive resin preferably includes, for example, a silicone resin (here, silicone rubber or silicone elastomer is widely used). When a silicone resin is used to form an organic planarization layer, the transmittance to 350nm light can be greater than 80%. Acrylic resin can also be used instead of silicone resin. Acrylic resin can also obtain an organic planarization layer with high transmittance to visible light. However, in order to achieve a transmittance to 350nm light of greater than 80%, it is preferably used. For example, KER-2500 manufactured by Shin-Etsu Chemical Co., Ltd. can be used as the silicone resin.

[0089] From the perspective of the flexibility (bendability) of the OLED display device, it is preferred that the elastic modulus of the photosensitive resin at 0°C does not exceed 400 MPa. For example, in an evaluation using a planar U-shaped bending tester manufactured by Yuasa System Instruments Co., Ltd., it can withstand 10,000 bending operations. Specifically, at 25°C, the radius of the bent portion becomes 5 mm, and after 10,000 bending operations at an operating frequency of 1 Hz, no cracks are observed by visual observation or optical microscope observation. In addition, the WVTR evaluation using Ca (calcium) can also obtain a value of 10. -5 g / m 2 In addition, it also has the effect of alleviating the external force applied to the OLED display device from being applied to the OLED layer.

[0090] As mentioned above, due to the excellent barrier properties of TFE 10, photosensitive resin can be used for the exposure and development processes on the device substrate formed with TFE 10. Since the OLED layer is easily degraded by contact with chemicals, if the barrier properties of TFE 10 are reduced, the OLED layer will degrade during the development process.

[0091] Next, refer to Figure 4 (a)~(b). Figure 4 (a) to (c) are Figure 3 The schematic cross-sectional view of the OLED display device 100A is shown. Figure 4 (a) is along Figure 3 The cross-sectional view along line 4A-4A' in FIG. Figure 4 (b) is along Figure 3 The cross-sectional view of line 4B-4B' in FIG. Figure 4 (c) is along Figure 3 Cross-sectional view along line 4C-4C'. Figure 4 (d) is a cross-sectional view of an OLED display device 100C of a comparative example, and Figure 3 The cross-sectional view corresponds to the line 4B-4B'.

[0092] Figure 4 (a) is along Figure 3The cross-sectional view along line 4A-4A' in FIG. 4A shows a portion containing particles P. Particles P are tiny waste generated during the manufacturing process of OLED displays, such as tiny glass fragments, metal particles, or organic particles. Particles are particularly prone to generation when using masked evaporation.

[0093] like Figure 4 As shown in (a), the organic barrier layer (solid portion) 14 may be formed only around the periphery of the particle P. This is because the acrylic monomer imparted after the first inorganic barrier layer 12 is formed condenses and is unevenly distributed around the surface (taper angle θ greater than 90°) of the first inorganic barrier layer 12a on the particle P. The flat portion of the first inorganic barrier layer 12 becomes the opening (non-solid portion) of the organic barrier layer 14.

[0094] When particles P (for example, with a diameter greater than about 1 μm) are present, cracks (defects) 12c may be formed on the first inorganic barrier layer 12. This is thought to be due to the SiN growth from the surface of the particles P. x The layer 12a is connected to the SiN layer grown from the flat portion of the surface of the OLED 3. x When such cracks 12c exist, the barrier property of the TFE structure 10 is reduced.

[0095] In the TFE structure 10 of the OLED display device 100, as shown in FIG. Figure 4 As shown in (a), the organic barrier layer 14 is formed to fill the cracks 12c in the first inorganic barrier layer 12, and the surface (concave shape) of the organic barrier layer 14 is continuously and smoothly connected to the surface of the first inorganic barrier layer 12a on the particles P and the surface of the first inorganic barrier layer 12b on the flat portion of the OLED 3. As will be described later, the organic barrier layer 14 is formed by curing a liquid photocurable resin, so the concave surface is formed due to surface tension. In this case, the photocurable resin exhibits good wettability to the first inorganic barrier layer 12. If the first inorganic barrier layer 12 exhibits poor wettability to the photocurable resin, the resulting concave surface will be convex.

[0096] The organic barrier layer (solid portion) 14 having a concave surface prevents defects from forming in the first inorganic barrier layer 12a on the particles P and the second inorganic barrier layer 16 formed on the organic barrier layer 14, thereby forming a dense film. Thus, the organic barrier layer 14 maintains the barrier properties of the TFE structure 10 (composite laminate 10S) even in the presence of the particles P.

[0097] The composite stack 10S has a relatively soft organic barrier layer (solid part) 14 around the particle P, and since there is a continuous second inorganic barrier layer 16 on the particle P, even if it is bent, cracks starting from the particle P are suppressed, so the reduction in barrier properties caused by bending is suppressed, resulting in excellent bending resistance.

[0098] like Figure 4 As shown in (b), in the area close to the active area R1 ( Figure 3 In the cross section along line 4BB′ in FIG. 5 (a), the TFE structure 10 and the organic planarization layer 42A are formed on the lead-out wiring 32 .

[0099] like Figure 4 As shown in (c), the terminals 34 are exposed and used for electrical connection to an external circuit (FPC (Flexible printed circuits)).

[0100] Contains Figure 4 In the process of forming the organic barrier layer 14 of the TFE structure 10, the region shown in the portion (b) may form an organic barrier layer (solid portion). Figure 4 In the comparative example OLED display device 100C shown in (d), the TFE structure 10C has a taper angle θ greater than 90° on the side surfaces of the cross-sectional shape parallel to the line width direction of the lead wiring 32. This allows the organic barrier layer 14C to form along the side surfaces of the lead wiring 32. In contrast, in the OLED display device 100A according to the embodiment, the taper angle θ of the side surfaces of the cross-sectional shape of the lead wiring 32 and the terminal 34 is set to less than 90°, thereby preventing uneven distribution of the photocurable resin. Consequently, the organic barrier layer (solid portion) is not formed along the side surfaces of the lead wiring 32 and the terminal 34.

[0101] When the side taper angle θ is greater than 90°, in the methods for forming an organic barrier layer described in Patent Documents 2 or 3, the vaporized or misty organic material (e.g., acrylic monomer) condenses along the boundary between the side and the flat surface (forming an angle less than 90°), thereby forming an organic barrier layer (solid portion). Thus, for example, the organic barrier layer (solid portion) formed along the lead wiring becomes a path that guides water vapor in the air into the active area.

[0102] like Figure 4In the OLED display device 100A according to the embodiment of the present invention shown in (b), the taper angles of the side surfaces of the lead-out wiring 32 and the first inorganic barrier layer 12 are both less than 90°, and the organic barrier layer 14 is not formed along these side surfaces. Therefore, moisture in the air does not reach the active region R1 via the organic barrier layer (solid portion) 14, resulting in excellent moisture resistance and reliability. While the taper angle of the lead-out wiring is less than 90°, the taper angle of at least the side surface of the first inorganic barrier layer 12 that forms the surface directly below the organic barrier layer 14 may also be less than 90°.

[0103] In addition, there is a case where the taper angle of the side surface is within the range of greater than 70° and less than 90°, and an organic barrier layer (solid portion) 14 is formed along the side surface. Of course, if an ashing process is performed, the uneven resin can be removed along the inclined side surface, but the time required for the ashing process becomes longer. For example, even after the resin formed on the flat surface is removed, a long ashing process is required. Alternatively, excessive ashing (removal) of the organic barrier layer (solid portion) formed around the particle P may result in a problem in which the effect of forming the organic barrier layer cannot be fully exerted. In order to suppress and prevent this, it is preferred that the taper angle θ of the first inorganic barrier layer 12 be set to less than 70°, and more preferably to less than 60°.

[0104] The touch sensor layer 50 of the OLED display device 100 according to the embodiment of the present invention may be a known touch sensor layer. For example, it may be a resistive film type or a projected electrostatic capacitance type touch sensor layer. Figure 5 and Figure 6 , the structures of the touch sensing layer 50A and the touch sensing layer 50B applicable to the OLED display device 100 will be described.

[0105] Figure 5 (a) is a schematic top view of the touch sensing layer 50A. Figure 5 FIG. (b) is a top view of the touch sensing layer 50A. The touch sensing layer 50A is formed on the inorganic insulating layer 44 formed on the organic planarization layer 42 .

[0106] The touch sensing layer 50A has a plurality of X electrodes 52A and a plurality of Y electrodes 54A. The X electrodes 52A extend along the X direction, and the Y electrodes 54A extend along the Y direction perpendicular to the X direction. Each of the X electrodes 52A and the Y electrodes 54A is formed by a metal grid. The smallest unit of the metal grid is, for example, a 35μm×35μm square. A plurality of these are gathered together to form, for example, a 3mm×3mm square unit electrode. The unit electrodes are connected to the X direction or the Y direction respectively through wiring. The intersection of the wiring is, for example, in the inorganic insulating layer (SiN xThe metal grid may have, for example, a stacked structure of a Ti layer and an Al layer, or a stacked structure of a Ti layer / Al layer / Ti layer.

[0107] Figure 6 (a) is a schematic top view of the touch sensing layer 50B. Figure 6 (b) is a top view of the touch sensing layer 50B. The touch sensing layer 50B is formed on the inorganic insulating layer 44 formed on the organic planarization layer 42. Each of the X electrode 52B and the Y electrode 54B having the touch sensing layer 50B is formed of a transparent conductive layer (such as an ITO layer), and the inorganic insulating layer (such as SiN x From the perspective of light transmittance, the touch sensing layer 50A is more advantageous.

[0108] Furthermore, a flexible OLED display device is formed by forming a polyimide film on a supporting substrate (e.g., a glass substrate), and the polyimide film on the supporting substrate is used as the substrate 1. Here, an OLED display device having a touch sensing layer 50A or 50B is exemplified. After forming the touch sensing layer 50A or 50B, the polyimide film can be separated from the supporting substrate to obtain a flexible OLED display device.

[0109] Next, refer to Figure 7 and Figure 8 , describing an example of a TFT to be used in an OLED display device, and an example of using a gate metal layer and a source metal layer to form lead wiring and terminals when manufacturing the TFT.

[0110] High-definition, small- to medium-sized OLED displays are suitable for the use of high-mobility, low-temperature polycrystalline silicon (TPS) TFTs or oxide TFTs (for example, quaternary oxides composed of In (indium), Ga (gallium), Zn (zinc), and O (oxygen) (In-Ga-Zn-O). Since the structures and manufacturing methods of LTPS TFTs and In-Ga-Zn-O TFTs are well known, a brief description is provided below.

[0111] Figure 7 (a) is LTPS-TFT2 P Schematic cross-sectional view of T, TFT2 P T may include the circuit 2 of the OLED display device 100. LTPS-TFT2 P T is a top-gate TFT.

[0112] TFT2 P T is a base film 2 on a substrate (such as a polyimide film) 1 P Although not described above, it is preferable to form a base film made of an inorganic insulator on the substrate 1 .

[0113] TFT2 P T has formed on the basement membrane 2 P Polysilicon layer 2 on p P se, formed on the polysilicon layer 2 P Gate insulation layer 2 on se P gi, formed on the gate insulating layer 2 P Gate electrode 2 on gi P g. Formed on the gate electrode 2 P Interlayer insulating layer 2 on g P i. Source electrode 2 formed on interlayer insulating layer 2Pi P ss and drain electrode 2 P sd. Source electrode 2 P ss and drain electrode 2 P sd is formed on the interlayer insulating layer 2 P i and gate insulating layer 2 P gi, respectively, with the polysilicon layer 2 P The source and drain regions of se are in contact.

[0114] Gate electrode 2 P g and the gate bus contain the same gate metal layer, source electrode 2 P ss and drain electrode 2 P sd and source bus lines contain source metal layers. Using gate metal layers and source metal layers, lead wires and terminals are formed (see Figure 8 and described later).

[0115] TFT2 P T is produced, for example, in the following manner.

[0116] For example, a polyimide film having a thickness of 15 μm is prepared as the substrate 1 .

[0117] The base film 2 is formed by plasma CVD method P p(SiO2 film: 250nm / SiN x Film: 50nm / SiO2 film: 500nm (upper layer / middle layer / lower layer)) and a-Si film (40nm) are formed.

[0118] The a-Si film is subjected to dehydrogenation treatment (eg, annealing at 450° C. for 180 minutes).

[0119] The a-Si film was converted into polysilicon using an excimer laser annealing (ELA) method.

[0120] In the wavelength conversion step, the a-Si film is patterned to form an active layer (semiconductor island).

[0121] A gate insulating film (SiO 2 film: 50 nm) was formed by plasma CVD.

[0122] The channel region of the active layer is doped (B+).

[0123] A gate metal (Mo: 250 nm) is formed by sputtering and patterned in a wavelength conversion process (including a dry etching process) (forming a gate electrode 2 P g and gate bus, etc.).

[0124] The source and drain regions of the active layer are doped (P+).

[0125] Activation annealing is performed (for example, annealing at 450° C. for 45 minutes). In this way, the polysilicon layer 2 is obtained. P se.

[0126] The interlayer insulating film (for example, SiO2 film: 300nm / SiN x Film: 300nm (upper layer / lower side)) film formation.

[0127] Contact holes are formed in the gate insulating film and the interlayer insulating film by dry etching. P i and gate insulating layer 2 P gi.

[0128] The source metal (Ti film: 100nm / Al film: 300nm / Ti film: 30nm) is formed by sputtering and patterned in a wavelength conversion process (including a dry etching process) (forming the source electrode 2 P ss, drain electrode 2 P sd and gate bus, etc.).

[0129] Figure 7 (b) is In-Ga-Zn-O TFT2 O Schematic cross-sectional view of T, TFT2 O T may include the circuit 2 of the OLED display device 100. TFT2 O T is a top-gate TFT.

[0130] TFT2 O T is a base film 2 on a substrate (such as a polyimide film) 1 O TFT2 is formed on p. O T has formed on the basement membrane 2 O Gate electrode 2 on p O g. Formed on the gate electrode 2 O Gate insulating layer 2 on g O gi, formed on the gate insulating layer 2 O Oxide semiconductor layer 2 on giO se, in the oxide semiconductor layer 2 O The source electrode 2 is connected to the source region and the drain region of se. O ss and drain electrode 2 O sd. Source electrode 2 O ss and drain electrode 2 O sd is interlayer insulating layer 2 O i Cover.

[0131] Gate electrode 2 O g is the same as the gate bus and includes a gate metal layer, a source electrode 2 O ss and drain electrode 2 O sd is the same as the source bus line and includes a source metal layer. Using the gate metal layer and the source metal layer, lead wires and terminals are formed, which can have reference Figure 8 and the structure described later.

[0132] TFT2 O T is produced, for example, in the following manner.

[0133] For example, a polyimide film having a thickness of 15 μm is prepared as the substrate 1 .

[0134] The base film 2Op (SiO2 film: 250nm / SiN x Film: 50nm / SiO2 film: 500nm (upper layer / middle layer / lower layer)) film formation.

[0135] The gate metal (Cu film: 300nm / Ti film: 30nm (upper layer / lower layer)) was formed by sputtering and patterned in a wavelength conversion process (including a dry etching process) (forming a gate electrode 2 O g and gate bus, etc.).

[0136] The gate insulating film (SiO2 film: 300nm / SiN x Film: 300nm (upper layer / lower layer)) film formation.

[0137] An oxide semiconductor film (In—Ga—Zn—O-based semiconductor film: 100 nm) was deposited by sputtering and patterned in a wavelength conversion step (including wet etching) to form an active layer (semiconductor island).

[0138] The source metal (Ti film: 100nm / Al film: 300nm / Ti film: 30nm (upper layer / middle layer / lower layer)) is formed by sputtering and patterned in the wavelength conversion process (including dry etching process) (forming the source electrode 2 O ss, drain electrode 2 O sd and gate bus, etc.).

[0139] Activation annealing is performed (for example, annealing at 300° C. for 120 minutes). In this way, the oxide semiconductor layer 2 is obtained. O se.

[0140] Then, the interlayer insulating film 2 is formed by plasma CVD. O i (e.g., SiO2 film: 300nm / SiN x Film: 300nm (upper layer / lower layer)) film is formed as a protective film.

[0141] Next, refer to Figure 8 (a) and (b) illustrate the structure of another OLED display device according to an embodiment of the present invention. The circuit (backplane) 2 of the OLED display device has Figure 7 TFT2 shown in (a) P T or Figure 7 (b) TFT2 O T, used to manufacture TFT2 P T or TFT2 O The gate metal layer and the source metal layer at T are used to form the lead-out wiring 32A and the terminal 34A. Figure 8 (a) and (b) are respectively Figure 4 (b) and (c) of FIG. 1 , the corresponding components are given the reference numerals “A”. Figure 8 The TFE structure 10A of (a) is covered by an organic planarization layer (not shown). Figure 8 Basement membrane 2p and Figure 7 (a) The basement membrane 2Pp and Figure 7 (b) Basement membrane 2 O p corresponds to, Figure 8 The gate insulating layer 2gi in Figure 7 (a) The gate insulating layer 2 P gi and Figure 7 (b) The gate insulating layer 2 O gi corresponds to, Figure 8 The interlayer insulating layers 2i in Figure 7 The interlayer insulating layer 2Pi in (a) and Figure 7 (b) The interlayer insulating layer 2 O i corresponds.

[0142] like Figure 8 As shown in (a) and (b), the gate metal layer 2g and the source metal layer 2s are formed on the base film 2p formed on the substrate 1. Figure 4 Although omitted in the figure, it is preferable to form a base film 2p made of an inorganic insulator on the substrate 1.

[0143] like Figure 8 As shown in (a) and (b), the lead wiring 32A and the terminal 34A are formed as a stack between the gate metal layer 2g and the source metal layer 2s. The portion of the lead wiring 32 and the terminal 34A formed in the gate metal layer 2g has, for example, the same cross-sectional shape as the gate bus, and the portion of the lead wiring 32 and the terminal 34A formed in the source metal layer 2s has, for example, the same cross-sectional shape as the source bus. For example, in the case of a 5.7-inch display device with 500pii, the line width of the portion formed in the gate metal layer 2g is, for example, 10μm, and the adjacent spacing is 16μm (L / S=10 / 16), and the line width of the portion formed in the source metal layer 2s is, for example, 16μm, and the adjacent spacing is 10μm (L / S=16 / 10). Any one of the cone angles θ is less than 90°, preferably less than 70°, and more preferably less than 60°.

[0144] Next, refer to Figure 9 (a) and (b) illustrate a film forming apparatus 200 and a film forming method thereof for forming an organic barrier layer. Figure 9 (a) and (b) are diagrams schematically showing the structure of the film forming apparatus 200. Figure 9 (a) shows the state of the film forming apparatus 200 in the process of condensing the photocurable resin on the first inorganic barrier layer in a container containing the vapor or mist of the photocurable resin. Figure 9 (b) shows the state of the film forming apparatus 200 in the step of irradiating the photocurable resin with light having photosensitivity to cure the photocurable resin.

[0145] The film forming apparatus 200 includes a container 210 and a partition wall 234 that divides the interior of the container 210 into two spaces.

[0146] A mounting platform 212 and a shower plate 220 are located in a space within container 210 that is partitioned by a partition wall. An ultraviolet irradiation device 230 is located in a space within container 210 that is partitioned by a partition wall 234. Container 210 controls the internal space at a predetermined pressure (vacuum level) and temperature. The mounting platform 212 includes an upper surface that accommodates the element substrate 20 having a plurality of OLEDs 3 forming the first inorganic barrier layer, and can be cooled to, for example, -20°C.

[0147] The shower plate 220 is configured to form a gap 224 between the shower plate 220 and the partition wall, and has a plurality of through holes 222. The vertical dimension of the gap 224 can be, for example, greater than 100 nm and less than 100 nm. The acrylic monomer (vapor or mist) supplied to the gap 224 is supplied from the plurality of through holes 222 of the shower plate 220 to the space on the side of the mounting table 212 in the container 210. The acrylic monomer is heated as needed. The vapor or mist acrylic monomer 26p adheres to or contacts the first inorganic barrier layer of the element substrate 20. The acrylic monomer 26 is supplied from the container 202 to the container 210 at a predetermined flow rate. While the container 202 supplies the acrylic monomer 26 via the piping 206, nitrogen is supplied from the piping 204. The flow rate of the acrylic monomer to the container 202 is controlled by the mass flow controller 208. The shower plate 220, the container 202, the piping 204, 206 and the mass flow controller 208 constitute a raw material supply device.

[0148] The ultraviolet irradiation device 230 includes an ultraviolet light source and optional optical components. The ultraviolet light source can be, for example, an ultraviolet lamp (e.g., a mercury lamp (including high-pressure and ultrahigh-pressure lamps), a mercury-xenon lamp, or a metal halide lamp), or an ultraviolet light-emitting semiconductor element such as an ultraviolet LED or an ultraviolet semiconductor sensor. Optical components include, for example, reflectors, prisms, optical fibers, diffraction elements, spatial light modulators, and holographic elements. Multiple ultraviolet light sources can also be used, depending on their type and size.

[0149] When the ultraviolet irradiation device 230 is positioned at a predetermined position, it emits light having a predetermined wavelength and intensity toward the upper surface of the mounting table 212. The partition wall 234 and the shower plate 220 are preferably formed of a material having a high ultraviolet transmission rate, such as quartz.

[0150] The organic barrier layer 14 can be formed as follows using the film forming apparatus 200. Here, an example of using an acrylic monomer as the photocurable resin will be described.

[0151] Acrylic acid 26p is provided into container 210. The element substrate 20 is cooled in container 212 to, for example, -15°C. Acrylic acid monomer 26p condenses on the first inorganic barrier layer 12 of the element substrate 20. By controlling the conditions at this time, the liquid acrylic acid monomer can be unevenly distributed around the protrusions having the first inorganic barrier layer 12. Alternatively, the conditions can be controlled so that the acrylic acid condensed on the first inorganic barrier layer 12 forms a liquid film.

[0152] By adjusting the viscosity and / or surface tension of the liquid photocurable resin, the thickness of the liquid film and the shape (concave shape) of the portion contacting the convex portion of the first inorganic barrier layer 12 can be controlled. For example, since viscosity and surface tension depend on temperature, they can be controlled by adjusting the temperature of the device substrate. For example, the size of the solid portion existing on the flat portion can be controlled by the shape (concave shape) of the portion contacting the convex portion of the first inorganic barrier layer 12D of the liquid film and the conditions of the subsequent ashing process.

[0153] Next, the ultraviolet irradiation device 230 is used to irradiate ultraviolet rays 232 onto the entire surface of the element substrate 20, thereby curing the acrylic monomer on the first inorganic barrier layer 12. As the ultraviolet light source, for example, a high-pressure mercury lamp with a main peak at 365 nm is used, and as the ultraviolet intensity, for example, 12 mW / cm2 is used for about 10 seconds.

[0154] The organic barrier layer 14 made of acrylic resin is formed as follows: The takt time of the step of forming the organic barrier layer 14 is, for example, less than approximately 30 seconds, and mass productivity is very high.

[0155] Alternatively, the organic barrier layer 14 can be formed around the protrusions by curing a liquid film of photocurable resin and then ashing it. Furthermore, ashing can be performed when the organic barrier layer 14 is formed by curing a non-uniform photocurable resin. This ashing process can improve the connectivity between the organic barrier layer 14 and the second inorganic barrier layer 16. Specifically, ashing is not only used to remove excess portions of a temporarily formed organic barrier layer, but can also be used to modify (hydrophilize) the surface of the organic barrier layer 14.

[0156] The ashing process can be performed using a known plasma ashing device, a light-excited ashing device, or a UV ozone ashing device. For example, plasma ashing using at least one of N2O, O2, and O3 gases or a combination thereof can be performed. The SiN2O2 and SiN2O2 layers of the first inorganic barrier layer 12 and the second inorganic barrier layer 16 can be made of a CVD method. x In the case of film formation, since N2O is used as a raw material gas, there is an advantage in that the device structure can be simplified when N2O is used for ashing.

[0157] During ashing, the surface of the organic barrier layer 14 is oxidized and modified to be hydrophilic. Furthermore, while the surface of the organic barrier layer 14 is roughly uniform, it also forms extremely fine irregularities, increasing its surface area. The surface area increase during ashing is greater for the surface of the organic barrier layer 14 than for the inorganic material, namely, the first inorganic barrier layer 12. Therefore, the modified hydrophilicity and increased surface area of ​​the organic barrier layer 14 enhance close contact with the second inorganic barrier layer 16.

[0158] Thereafter, the organic barrier layer 14 is transported to a CVD vessel for forming the second inorganic barrier layer 16, where, for example, the second inorganic barrier layer 16 is formed under the same conditions as for the first inorganic barrier layer 12. Since the second inorganic barrier layer 16 is formed in the region where the first inorganic barrier layer 12 is formed, the non-solid portion of the organic barrier layer 14 forms an inorganic barrier layer junction portion that is in direct contact with the first inorganic barrier layer 12 and the second inorganic barrier layer 16. Therefore, as described above, water vapor in the air can be controlled and prevented from reaching the active region via the organic barrier layer.

[0159] The first and second inorganic barrier layers 12 and 16 are formed, for example, as follows. Using a plasma CVD method using SiH₄ and N₂O gases, for example, with the temperature of the substrate (OLED 3) being controlled at 80°C or below, a 400 nm thick inorganic barrier layer can be formed at a deposition rate of 400 nm / min. The resulting inorganic barrier layer has a tortuosity of 1.84 and a transmittance of 90% (at a thickness of 400 nm) for visible light at 400 nm. Furthermore, the absolute value of the film stress is 20 MPa.

[0160] In addition, in addition to SiN x In addition to the layer, SiO2, SiO x N y (x>y) layer, SiN x O y (x>y) layer, Al2O3 layer, etc. are used as inorganic barrier layers. Photocurable resins include, for example, vinyl-containing monomers. Among them, acrylic monomers are suitable for use. A photopolymerization initiator can be mixed with the acrylic monomer as needed. Various well-known acrylic monomers can also be used. A variety of acrylic monomers can also be mixed. For example, a difunctional monomer and a multifunctional monomer of more than a trifunctional monomer can also be mixed. In addition, oligomers can also be mixed. Ultraviolet curable silicone resin can also be used as a photocurable resin. Silicone resin (including silica gel) has excellent visible light transmittance and weather resistance, and has the characteristic of not turning yellow even after long-term use. Photocurable resins that are cured by irradiation with visible light can also be used. The viscosity of the photocurable resin at room temperature before curing (for example, 20°C) is preferably not more than 10PA·S, more preferably 1 to 100mPA·S. When the viscosity becomes high, it is difficult to form a thinner liquid film with a thickness of less than 50nm.

[0161] In the above, embodiments of an OLED display device having a flexible substrate and a method for manufacturing the same are described, but the embodiments of the present invention are merely exemplary and non-restrictive and can be widely applied to organic EL devices (e.g., organic EL lighting devices) having an organic EL element formed on a substrate that is not flexible (e.g., a glass substrate) and a thin film encapsulation structure formed on the organic EL element.

[0162] Industrial applicability

[0163] The embodiments of the present invention are used in organic EL devices and methods for manufacturing the same. The embodiments of the present invention are particularly suitable for flexible organic EL display devices and methods for manufacturing the same.

[0164] Description of Reference Numerals

[0165] 1. Substrate (flexible substrate)

[0166] 2 Circuit (Driver Circuit or Backplane Circuit)

[0167] 3 Organic EL elements

[0168] 4 polarizing plates

[0169] 10 Thin film encapsulation structure (TFE structure)

[0170] 12 First inorganic barrier layer (SiN x layer)

[0171] 14. Organic barrier layer (acrylic resin layer)

[0172] 16 The second inorganic barrier layer (SiN x layer)

[0173] 20 Component substrate

[0174] 26 Acrylic monomer

[0175] 26P Acrylic acid monomer vapor or mist

[0176] 100, 100A organic EL display device.

Claims

1. An organic EL device, characterized in that The organic EL device includes: an element substrate comprising a substrate and a plurality of organic EL elements supported by the substrate; a thin film encapsulation structure, the thin film encapsulation structure being a thin film encapsulation structure formed on the plurality of organic EL elements, and comprising at least one composite laminate consisting of a first inorganic barrier layer, an organic barrier layer, and a second inorganic barrier layer, the organic barrier layer being in contact with an upper surface of the first inorganic barrier layer, and the second inorganic barrier layer being in contact with both the upper surface of the first inorganic barrier layer and the upper surface of the organic barrier layer; an organic planarization layer, which is disposed on the thin film encapsulation structure and is composed of a photosensitive resin; a touch sensing layer, which is configured on the organic planarization layer; a driving circuit supported by the substrate; a plurality of terminals arranged in the peripheral area; and a plurality of lead wires connecting the drive circuit and the plurality of terminals, The thin film encapsulation structure is selectively formed on at least an active region where the plurality of organic EL elements are arranged and a portion of the active region side of the plurality of lead wires, and is in contact with at least a portion of the plurality of lead wires. In portions of the plurality of lead wires in contact with the thin film encapsulation structure, a taper angle of a side surface of a cross-section of the first inorganic barrier layer parallel to the line width direction of the plurality of lead wires is less than 90°. The thin film encapsulation structure has an inorganic barrier layer junction portion, the organic barrier layer does not exist in the inorganic barrier layer junction portion, and the first inorganic barrier layer and the second inorganic barrier layer are in direct contact in the inorganic barrier layer junction portion, The inorganic barrier layer joint portion is formed in a region including the tapered portion of each of the plurality of lead wires, and the inorganic barrier layer joint portion completely surrounds the active region.

2. The organic EL device according to claim 1, wherein The photosensitive resin is negative.

3. The organic EL device according to claim 1 or 2, wherein: The thickness of the organic planarization layer does not exceed 15 μm.

4. The organic EL device according to claim 1 or 2, wherein: The photosensitive resin includes silicone resin.

5. The organic EL device according to claim 1 or 2, wherein: The transmittance of the organic planarization layer to light of 350 nm is greater than 80%.

6. The organic EL device according to claim 1 or 2, wherein: The elastic modulus of the photosensitive resin at 0° C. does not exceed 400 MPa.

7. The organic EL device according to claim 1 or 2, wherein: The device further comprises an inorganic insulating layer covering the organic planarization layer, and the touch sensing layer is formed on the inorganic insulating layer.

8. The organic EL device according to claim 1 or 2, wherein: The organic planarization layer covers at least the entire active area where the plurality of organic EL elements are arranged, and is formed in a larger area than the touch sensing layer.

9. The organic EL device according to claim 1 or 2, wherein: The organic planarization layer covers the entire device substrate.

10. A method for manufacturing an organic EL device, which is the method for manufacturing an organic EL device according to any one of claims 1 to 9, characterized in that: The process of forming the organic planarization layer includes: Step A, preparing the device substrate having the thin film encapsulation structure formed thereon; Step B, applying a liquid containing a negative photosensitive resin onto the device substrate in a manner that at least covers the thin film encapsulation structure; In step C, the entire photosensitive resin on the element substrate is irradiated with light.

11. The manufacturing method according to claim 10, wherein: The step B applies the liquid only to a predetermined area on the element substrate.

12. A method for manufacturing an organic EL device, which is the method for manufacturing an organic EL device according to any one of claims 1 to 9, characterized in that: The process of forming the organic planarization layer includes: Step A, preparing the device substrate having the thin film encapsulation structure formed thereon; Step B, applying a liquid containing a photosensitive resin onto the device substrate in a manner that at least covers the thin film encapsulation structure; Step C, selectively irradiating light onto the photosensitive resin present in a predetermined area on the element substrate or an area other than the predetermined area; Step D: after step C, contacting the photosensitive resin with a developer.

13. The manufacturing method according to any one of claims 10 to 12, wherein: The process of forming the at least one composite laminate comprises: a step of preparing the element substrate having the first inorganic barrier layer formed thereon into a container, a step of supplying a vapor or mist-like photocurable resin into the container, a step of condensing the photocurable resin on the first inorganic barrier layer to form a liquid film, a step of forming a photocurable resin layer by irradiating the liquid film of the photocurable resin with light, A process of forming the organic barrier layer by partially ashing the photocurable resin layer.

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