Power module, power supply controller, electric vehicle and method of assembling a power module

Abstract

The application discloses a power module, a power supply controller, an electric vehicle and an assembling method of the power module, wherein the power module comprises a MOS tube, a heat dissipation assembly, a first heat conduction layer and a first fixing adhesive layer; the heat dissipation assembly has a heat dissipation surface, the heat dissipation surface is provided with a mounting position, the MOS tube is arranged at the mounting position, the first heat conduction layer is arranged between the heat dissipation surface and the MOS tube, and the first fixing adhesive layer is arranged on the heat dissipation surface and abuts against the side edge of the MOS tube; after curing, the first fixing adhesive layer is used to limit the MOS tube arranged at the mounting position; in this way, after curing of the first fixing adhesive layer, the MOS tube is limited to be arranged on the heat dissipation surface, so that in the subsequent heat curing process, the MOS tube is limited to be arranged on the mounting position and cannot be deviated; in this way, the first fixing adhesive layer can replace the limiting tooling in the prior art scheme, the MOS tube of different sizes can be limited by the first fixing adhesive layer, and therefore the production cost of a workshop can be reduced.

Description

Technical Field

[0001] This invention relates to the field of power electronic device technology, and in particular to a power module, a power controller, an electric vehicle, and a method for assembling the power module. Background Technology

[0002] The MOSFETs in the power module generate heat during operation, so the MOSFETs need to be fixedly mounted on a heat sink, and the heat sink is used to dissipate heat from the single-tube module.

[0003] Currently, during the manufacturing process, the first thermally conductive layer between the MOSFET and the heat sink, such as thermal grease, needs to be thermally cured to ensure that the MOSFET is fixedly installed on the heat sink. Therefore, the MOSFET needs to be positioned before thermal curing to prevent it from shifting during the process. However, the existing methods all use positioning fixtures to position the MOSFET, which means that different positioning fixtures need to be set up to position MOSFETs of different sizes when they are different, thus increasing the production cost in the workshop. Summary of the Invention

[0004] The main objective of this invention is to provide a power module that achieves a limiting setting for the MOSFET on the heat dissipation component by setting a first fixing adhesive layer between the MOSFET and the heat dissipation component, and by setting the first fixing adhesive layer after curing. This solves the technical problem that the limiting of the MOSFET on the heat dissipation component requires limiting tooling, which increases the workshop production cost.

[0005] To achieve the above objectives, the present invention proposes a power module comprising a MOSFET, a heat dissipation assembly, a first thermally conductive layer, and a first adhesive layer. The heat dissipation assembly has a heat dissipation surface and a mounting position. The MOSFET is disposed at the mounting position. The first thermally conductive layer is sandwiched between the heat dissipation surface and the MOSFET. The first adhesive layer is disposed on the heat dissipation surface and abuts against the side of the MOSFET. The first adhesive layer is used to limit the MOSFET to be positioned at the mounting position after curing.

[0006] Optionally, the MOS transistor includes a transistor body and a plurality of pins. The transistor body is disposed at the mounting position. The first thermally conductive layer is sandwiched between the heat dissipation surface and the transistor body. The first fixing adhesive layer abuts against the side of the transistor body. The plurality of pins are mounted on the transistor body and electrically connected to the transistor body.

[0007] Optionally, the tube body is a square structure with at least one set of diagonals, and the tube body has two sides, one side of the tube body is located at one diagonal of the tube body, and the first fixing adhesive layer is located at the diagonal of the tube body.

[0008] Optionally, at least two MOS transistors are provided, and the heat dissipation assembly has a length direction, with at least two MOS transistors arranged at intervals along the length direction of the heat dissipation assembly.

[0009] Optionally, there are two heat dissipation surfaces, which are located on opposite sides of the heat dissipation component. There are at least two MOS transistors, with one MOS transistor corresponding to one heat dissipation surface of the heat dissipation component.

[0010] Optionally, the heat dissipation assembly includes a heat sink and a thermally conductive insulating component, the thermally conductive insulating component being disposed on the heat sink and forming the heat dissipation surface, and the first thermally conductive layer being sandwiched between the thermally conductive insulating component and the MOS transistor.

[0011] Optionally, the power module further includes a second thermally conductive layer and a second fixing adhesive layer. The second thermally conductive layer is sandwiched between the heat sink and the thermally conductive insulating component. The second fixing adhesive layer is disposed on the heat sink and abuts against the side of the thermally conductive insulating component. The second fixing adhesive layer is used to limit the thermally conductive insulating component to be positioned on the heat sink after curing.

[0012] Optionally, the thermally conductive insulating component has a square structure and at least one set of diagonals. The thermally conductive insulating component has two sides, one side of which is located at the diagonal of the other side, and the second fixing adhesive layer is located at the diagonal of the thermally conductive insulating component.

[0013] Optionally, the thermally conductive insulating element is a ceramic sheet or an aluminum substrate.

[0014] Optionally, the first fixing adhesive layer and / or the second fixing adhesive layer are UV adhesives.

[0015] Optionally, the thermally conductive insulating component is a thermally conductive adhesive film, with one side of the thermally conductive adhesive film adhered to the first thermally conductive layer and the other side of the thermally conductive adhesive film adhered to the heat dissipation surface.

[0016] To achieve the above objectives, embodiments of the present invention provide a power controller, which includes the power module described above.

[0017] To achieve the above objectives, embodiments of the present invention provide an electric vehicle, which includes a power controller as described above.

[0018] Furthermore, to achieve the above objectives, this application also provides a method for assembling a power module, the method comprising the following steps:

[0019] The first thermally conductive layer is disposed at the mounting position of the heat dissipation component, and the MOS transistor is attached to the mounting position of the heat dissipation component.

[0020] The first fixing adhesive layer is disposed on the heat dissipation surface and abuts against the side of the MOS transistor;

[0021] The first fixing adhesive layer is cured, and the MOS transistor is positioned at the mounting position.

[0022] The first thermally conductive layer is thermally cured, and the MOS transistor is fixedly installed at the mounting position.

[0023] Optionally, the step of placing the first fixing adhesive layer on the heat dissipation surface and abutting against the side of the MOSFET includes:

[0024] Image acquisition is performed on the relative position of the MOS transistor and the heat dissipation surface to obtain positional information between the MOS transistor and the heat dissipation surface;

[0025] Based on the positional information between the MOS transistor and the heat dissipation surface, the first fixing adhesive layer is disposed on the heat dissipation surface and abuts against the side of the MOS transistor.

[0026] Optionally, the heat dissipation assembly includes a heat sink and a thermally conductive insulating component, the thermally conductive insulating component being disposed on the heat sink and forming the heat dissipation surface, and the step of disposing the first thermally conductive layer at the mounting position of the heat dissipation assembly and attaching the MOSFET to the mounting position of the heat dissipation assembly includes:

[0027] The thermally conductive insulating component is disposed on the heat sink;

[0028] The first thermally conductive layer is disposed at the mounting position of the thermally conductive insulation component;

[0029] The MOS transistor is mounted on the mounting position of the thermally conductive insulator.

[0030] Optionally, the power module further includes a second thermally conductive layer and a second adhesive layer, and the step of placing the thermally conductive insulating component with the mounted MOSFET on the heat sink includes:

[0031] The second thermally conductive layer is disposed on the heat sink, and the thermally conductive insulating component is disposed on the second thermally conductive layer;

[0032] The second fixing adhesive layer is disposed on the heat sink and abuts against the side of the thermally conductive insulation component;

[0033] The second fixing adhesive layer is cured, and the thermally conductive insulating component is positioned on the heat sink.

[0034] The second thermally conductive layer is thermally cured, and the thermally conductive insulating component is fixedly installed at the mounting position.

[0035] Optionally, the step of placing the second adhesive layer on the heat sink and abutting against the side of the thermally conductive insulation includes:

[0036] Image acquisition is performed on the relative positions of the thermally conductive insulating component and the heat sink to obtain positional information between the thermally conductive insulating component and the heat sink;

[0037] The second fixing adhesive layer is disposed on the heat sink and abuts against the side of the thermally conductive insulating component based on the positional information between the thermally conductive insulating component and the heat sink.

[0038] The technical solution of this invention sets the first fixing adhesive layer on the heat dissipation surface of the heat dissipation component and abuts against the side of the MOSFET. After the first fixing adhesive layer is cured, it realizes the limiting setting of the MOSFET on the heat dissipation surface, ensuring that the MOSFET will be limited in the mounting position and will not shift during the subsequent thermosetting process. In this way, the first fixing adhesive layer can replace the limiting tooling in the existing solution. The first fixing adhesive layer can limit the MOSFET of different sizes, thereby reducing the production cost in the workshop. Attached Figure Description

[0039] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on the structures shown in these drawings without creative effort.

[0040] Figure 1 This is a schematic diagram of the structure of a power module according to an embodiment of the present invention;

[0041] Figure 2 This is a schematic diagram of another embodiment of the power module of the present invention;

[0042] Figure 3 for Figure 2 A cross-sectional schematic diagram of the power module shown;

[0043] Figure 4 This is a schematic diagram of another embodiment of the power module of the present invention;

[0044] Figure 5 This is a schematic diagram of another embodiment of the power module of the present invention;

[0045] Figure 6 This is a flowchart illustrating the first embodiment of the assembly method for the power module of the present invention;

[0046] Figure 7 This is a flowchart illustrating the second embodiment of the assembly method for the power module of the present invention;

[0047] Figure 8 This is a flowchart illustrating the third embodiment of the assembly method for the power module of the present invention;

[0048] Figure 9 This is a flowchart illustrating the fourth embodiment of the assembly method for the power module of the present invention;

[0049] Figure 10 This is a flowchart illustrating the fifth embodiment of the power module assembly method of the present invention.

[0050] Explanation of icon numbers:

[0051]

[0052]

[0053] The realization of the objective, functional features and advantages of the present invention will be further explained in conjunction with the embodiments and with reference to the accompanying drawings. Detailed Implementation

[0054] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of the present invention.

[0055] It should be noted that all directional indications (such as up, down, left, right, front, back, etc.) in the embodiments of the present invention are only used to explain the relative positional relationship and movement of each component in a certain specific posture (as shown in the figure). If the specific posture changes, the directional indication will also change accordingly.

[0056] Furthermore, the use of terms such as "first" and "second" in this invention is for descriptive purposes only and should not be construed as indicating or implying their relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined with "first" or "second" may explicitly or implicitly include at least one of that feature. Additionally, the technical solutions of the various embodiments can be combined with each other, but only on the basis of being achievable by those skilled in the art. When the combination of technical solutions is contradictory or impossible to implement, such a combination of technical solutions should be considered non-existent and not within the scope of protection claimed by this invention.

[0057] This invention proposes a power module 100.

[0058] In this embodiment of the invention, combined with Figures 1 to 5 As shown, the power module 100 includes a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), a heat dissipation assembly 30, a first thermally conductive layer 40, and a first adhesive layer 50. The heat dissipation assembly 30 has a heat dissipation surface 331 with a mounting position. The MOSFET 10 is located at the mounting position. The first thermally conductive layer 40 is sandwiched between the heat dissipation surface 331 and the MOSFET 10. The first adhesive layer 50 is located on the heat dissipation surface 331 and abuts against the side of the MOSFET 10. The first adhesive layer 50 is used to limit the MOSFET 10 to the mounting position after curing.

[0059] In this embodiment, it can be understood that the first thermally conductive layer 40 can be thermally conductive silicone grease or thermally conductive solder paste. The MOS transistor 10 is fixedly mounted on the heat dissipation assembly 30, and the generated heat will be dissipated through the heat dissipation assembly 30. Therefore, the MOS transistor 10 is fixed on the heat dissipation assembly 30 through the first thermally conductive layer 40. The first thermally conductive layer 40 has properties such as high thermal conductivity and insulation. However, since the first thermally conductive layer 40 needs to be thermally cured before the MOS transistor 10 can be fixed on the heat dissipation assembly 30, a first fixing adhesive layer 50 needs to be set to limit the MOS transistor 10 before thermal curing.

[0060] The technical solution of this application provides a first fixing adhesive layer 50 before the first thermal conductive layer 40 has been thermally cured, and by curing the first fixing adhesive layer 50, the MOSFET 10 can be limited to the mounting position of the heat dissipation component 30 after curing, thereby ensuring that the MOSFET 10 will not shift position during the subsequent thermal curing process of the first thermal conductive layer 40. Compared to existing technical solutions that use limiting fixtures to limit the MOSFET 10, the technical solution of this application does not require different limiting fixtures to limit MOSFETs 10 of different sizes. It only requires confirming the position between the MOSFET 10 and the heat dissipation component 30 before setting the first fixing adhesive layer 50, thereby improving the versatility of the first fixing adhesive layer 50, reducing the design of limiting fixtures, simplifying the process of the workshop production line, and reducing production costs. Since both the limiting fixture itself and the MOSFET 10 set on the limiting fixture have tolerances, this application improves the mounting accuracy of the MOSFET 10 and the heat dissipation component 30. In addition, since the limiting fixture is eliminated, when changing the model of the MOSFET 10, only the setting method of the first fixing adhesive layer 50 needs to be changed, without remaking or replacing the limiting fixture, thereby improving the production efficiency of the workshop. Furthermore, when heat curing the first thermally conductive layer 40, it is not necessary to carry the limiting fixture during heat curing, thereby reducing the utilization rate of the curing equipment and thus reducing the energy consumption of the curing equipment.

[0061] In one embodiment of the present invention, combined with Figure 2 As shown, the MOS transistor 10 includes a transistor body 11 and multiple pins 13. The transistor body 11 is located at the mounting position. A first thermal conductive layer 40 is sandwiched between the heat dissipation surface 331 and the transistor body 11. A first fixing adhesive layer 50 abuts against the side of the transistor body 11. Multiple pins 13 are mounted on the transistor body 11 and electrically connected to the transistor body 11.

[0062] In this embodiment, the MOSFET 10 includes a main body 11 and multiple pins 13. The connection between the main body 11 and the pins 13 can be an integral structure or a separate structure. It is understood that the main body 11 is mounted on the mounting position of the heat dissipation surface 331. Therefore, when the heat of the MOSFET 10 is transferred to the heat dissipation assembly 30 through the main body 11 for heat dissipation, the first thermally conductive layer 40 is sandwiched between the heat dissipation surface 331 and the main body 11. Thus, the side of the first fixing adhesive layer 50 abuts against the side of the main body 11, achieving a limiting effect on the main body 11. It should be noted that the number of pins 13 can be two or three, etc., and is not limited here.

[0063] In one embodiment of the present invention, combined with Figure 2As shown, the tube body 11 has a square structure and at least one set of diagonals. Two sides of the tube body 11 are provided, with one side of the tube body 11 located at one diagonal. The first fixing adhesive layer 50 is located at the diagonal of the tube body 11.

[0064] In this embodiment, since the tube body 11 has a square structure, it has a set of opposite corners. When the first fixing adhesive layer 50 limits the sides of the set of opposite corners, it can ensure that both sides of the tube body 11 can be limited by the first fixing adhesive layer 50. While ensuring the limiting effect, it reduces the amount of the first fixing adhesive layer 50 used, thus reducing the production cost in the workshop. When the tube body 11 has two sets of opposite corners, and the lines connecting the two sets of opposite corners intersect, the first fixing adhesive layer 50 will limit the sides of the two sets of opposite corners, ensuring that both sides of the tube body 11, i.e., the entire tube body 11, can be limited by the first fixing adhesive layer 50, thus improving the limiting effect on the tube body 11.

[0065] In one embodiment of the present invention, combined with Figures 1 to 2 As shown, at least two MOS transistors 10 are provided, and the heat dissipation assembly 30 has a length direction, with at least two MOS transistors 10 arranged at intervals along the length direction of the heat dissipation assembly 30.

[0066] In this embodiment, the number of MOSFETs 10 can be two, three, or four. The number of MOSFETs 10 is specifically limited here. The number of MOSFETs 10 can be selected according to the needs of the power module 100. When at least two MOSFETs 10 are arranged at intervals along the length of the heat dissipation component 30, the space in the length of the heat dissipation component 30 can be reasonably utilized, and the space in other directions can be reduced, thereby rationalizing the space utilization of the power module 100.

[0067] In one embodiment of the present invention, there are two heat dissipation surfaces 331, which are located on opposite sides of the heat dissipation assembly 30. There are at least two MOS transistors 10, with one MOS transistor 10 corresponding to a heat dissipation surface 331 of the heat dissipation assembly 30.

[0068] In this embodiment, two heat dissipation surfaces 331 are disposed on opposite sides of the heat dissipation component 30. That is, the heat dissipation component 30 has a width direction, and the two heat dissipation surfaces 331 are disposed on both sides of the heat dissipation component 30 along its width direction, and both can have heat dissipation performance. Therefore, the heat dissipation component 30 has two heat dissipation surfaces 331 to dissipate heat from the MOS transistor 10, thereby making full use of the heat dissipation performance of the heat dissipation component 30 and improving the utilization rate of the heat dissipation component 30.

[0069] In one embodiment of the present invention, combined with Figures 1 to 3As shown, the heat dissipation assembly 30 includes a heat sink 31 and a thermally conductive insulating member 33. The thermally conductive insulating member 33 is disposed on the heat sink 31, and a heat dissipation surface 331 is formed on the thermally conductive insulating member 33. A first thermally conductive layer 40 is sandwiched between the thermally conductive insulating member 33 and the MOS transistor 10.

[0070] In this embodiment, the heat dissipation component 30 includes a heat sink 31 and a thermally conductive insulating component 33. It can be understood that the heat sink 30 can be a liquid-cooled heat sink or an air-cooled heat sink; the thermally conductive insulating component 33 can be a ceramic sheet 333, an aluminum substrate 335, or a thermally conductive adhesive film 337. When the MOS transistor 10 is disposed on the heat dissipation surface 331 of the thermally conductive insulating component 33, it can be fixedly disposed on the heat dissipation surface 331 through the first thermally conductive layer 40. Therefore, the first fixing adhesive layer 50 will be disposed on the heat dissipation surface 331 of the thermally conductive insulating component 33 and abut against the side of the MOS transistor 10 to achieve the limiting placement of the MOS transistor 10 on the heat dissipation surface 331 of the thermally conductive insulating component 33.

[0071] In one embodiment of the present invention, combined with Figure 1 and Figure 3 As shown, the power module 100 also includes a second thermally conductive layer 70 and a second fixing adhesive layer 90. The second thermally conductive layer 70 is sandwiched between the heat sink 31 and the thermally conductive insulating member 33. The second fixing adhesive layer 90 is disposed on the heat sink 31 and abuts against the side of the thermally conductive insulating member 33. The second fixing adhesive layer 90 is used to limit the thermally conductive insulating member 33 to be disposed on the heat sink 31 after curing.

[0072] In this embodiment, after the MOSFET 10 is mounted on the thermally conductive insulating component 33, the thermally conductive insulating component 33 needs to be fixedly mounted onto the heat sink 31. Therefore, a second thermally conductive layer 70 is required to ensure a fixed connection between the thermally conductive insulating component 33 and the heat sink 31. Thus, before the second thermally conductive layer 70 is thermally cured, a second fixing adhesive layer 90 is required to limit the position of the thermally conductive insulating component 33 on the heat sink 31. The second thermally conductive layer 70 can be thermally conductive silicone grease or thermally conductive solder paste, and has properties such as high thermal conductivity and insulation.

[0073] In one embodiment of the present invention, combined with Figure 1 As shown, the thermally conductive insulating component 33 has a square structure and at least one set of diagonals. Two sides of the thermally conductive insulating component 33 are provided, with one side of the thermally conductive insulating component 33 located at the diagonal of the other thermally conductive insulating component 33, and the second fixing adhesive layer 90 is located at the diagonal of the thermally conductive insulating component 33.

[0074] In this embodiment, since the thermally conductive insulating component 33 has a square structure, it has a set of diagonals. When the second fixing adhesive layer 90 limits the sides of the set of diagonals, it ensures that both sides of the thermally conductive insulating component 33 can be limited by the second fixing adhesive layer 90. This ensures the limiting effect while reducing the amount of the second fixing adhesive layer 90 used, thus reducing production costs in the workshop. When the thermally conductive insulating component 33 has two sets of diagonals, and the lines connecting the two sets of diagonals intersect, the second fixing adhesive layer 90 will limit the sides of the two sets of diagonals. This ensures that both sides of the thermally conductive insulating component 33, i.e., the entire component, can be limited by the second fixing adhesive layer 90, improving the limiting effect of the thermally conductive insulating component 33.

[0075] In one embodiment of the present invention, combined with Figure 2 and Figure 4 As shown, the thermally conductive insulating component 33 is a ceramic sheet 333 or an aluminum substrate 335.

[0076] In this embodiment, when the thermally conductive insulating component 33 is a ceramic sheet 333, it can conduct heat and provide insulation for the medium-power MOSFET 10, and its price is relatively cheaper compared to the aluminum substrate 335. However, when the thermally conductive insulating component 33 is an aluminum substrate 335, although its price is relatively more expensive than that of the ceramic sheet 333, it is necessary to set up an aluminum substrate 335 to better achieve thermal conduction and insulation for the high-power MOSFET 10. The aluminum substrate 335 may include a circuit layer, an insulating layer, and a metal base layer, and the three are arranged from top to bottom along the height direction of the thermally conductive insulating component 33. The circuit layer can be aluminum foil, the insulating layer can be PP (Polypropylene) substrate, and the metal base layer can be aluminum substrate. The materials of the circuit layer, the insulating layer, and the metal base layer are not specifically limited here.

[0077] In one embodiment of the present invention, the first fixing adhesive layer 50 and / or the second fixing adhesive layer 90 are UV adhesives.

[0078] In this embodiment, the first fixing adhesive layer 50 and the second fixing adhesive layer 90 can be UV adhesives (Ultraviolet Rays). Therefore, the first fixing adhesive layer 50 and the second fixing adhesive layer 90 can be cured by ultraviolet light. UV adhesives have properties such as non-volatile properties, rapid curing, and high transparency. In some other embodiments, the first fixing adhesive layer 50 and / or the second fixing adhesive layer 90 can be 502 glue.

[0079] In one embodiment of the present invention, combined with Figure 5 As shown, the thermally conductive insulating component 33 is a thermally conductive adhesive film 337. One side of the thermally conductive adhesive film 337 is adhered to the first thermally conductive layer 40, and the other side of the thermally conductive adhesive film 337 is adhered to the heat dissipation surface 331.

[0080] In this embodiment, the thermally conductive adhesive film 337 is suitable for thermal conduction and insulation of the low-power MOSFET 10. Compared with the ceramic sheet 333 and the aluminum substrate 335, the thermally conductive adhesive film 337 has the lowest price, which can reduce production costs. In some embodiments, the thermally conductive adhesive film can be directly fixed to the MOSFET 10 by adhesive bonding, thus eliminating the need for the first thermally conductive layer 40 and simplifying the structure of the power module 100 itself.

[0081] Furthermore, the present invention also proposes a power controller (not shown in the figure) that includes the power module 100 as described above.

[0082] It should be noted that the detailed structure of the power module 100 can be referred to the above embodiments of the power module 100, and will not be repeated here. Since the power module 100 is used in the power controller of the present invention, the embodiments of the power module 100 of the present invention include all the technical solutions of all the embodiments of the power module 100, and the technical effects achieved are exactly the same, and will not be repeated here.

[0083] Furthermore, the present invention also proposes an electric vehicle (not shown in the figure) that includes a power controller as described above.

[0084] It should be noted that the detailed structure of the power controller can be referred to the above-described power controller embodiments, and will not be repeated here. Since the above-described power controller is used in the electric vehicle of the present invention, the embodiments of the power controller of the present invention include all the technical solutions of all the above-described power controller embodiments, and the technical effects achieved are exactly the same, and will not be repeated here.

[0085] Furthermore, the present invention also provides a method for assembling a power module 100, which is used in conjunction with the power module 100 described above. Figure 6 As shown, the first embodiment of the assembly method of the power module 100 of the present invention includes the following steps in the control method of the power module 100:

[0086] In step S10, the first thermal conductive layer 40 is placed at the mounting position of the heat dissipation component 30, and the MOS transistor 10 is attached to the mounting position of the heat dissipation component 30.

[0087] Step S20: The first fixing adhesive layer 50 is placed on the heat dissipation surface 331 and abuts against the side of the MOS transistor 10.

[0088] In step S30, the first fixing adhesive layer 50 is cured, and the MOS tube 10 is positioned at the mounting position.

[0089] In step S40, the first thermally conductive layer 40 is thermally cured, and the MOS tube 10 is fixedly installed in the mounting position.

[0090] The specific implementation method of the assembly method of the power module 100 of this application can be referred to the above embodiments of the power module 100, and will not be repeated here.

[0091] In this embodiment, by placing the first fixing adhesive layer 50 on the heat dissipation surface 331 and abutting against the side of the MOSFET 10, the first fixing adhesive layer 50 is cured before the first thermal conductive layer 40 is thermally cured, thereby limiting the MOSFET 10 at the mounting position on the heat dissipation surface 331. This eliminates the need for the limiting fixture, and by eliminating the limiting fixture, the steps of assembling and disassembling the limiting fixture can be reduced, thereby improving the work efficiency of the workshop. Furthermore, in the step of thermally curing the first thermal conductive layer 40, it is not necessary to place the limiting fixture into the curing equipment, reducing the steps and improving the utilization rate of the curing equipment.

[0092] Furthermore, based on the first embodiment, a second embodiment of the present invention is proposed, combining... Figure 7 As shown, step S20, which involves placing the first adhesive layer 50 on the heat dissipation surface 331 and abutting against the side of the MOSFET 10, includes:

[0093] Step S21: Image acquisition is performed on the relative position of MOS transistor 10 and heat dissipation surface 331 to obtain position information between MOS transistor 10 and heat dissipation surface 331.

[0094] Step S22: Based on the position information between the MOSFET 10 and the heat dissipation surface 331, the first fixing adhesive layer 50 is disposed on the heat dissipation surface 331 and abuts against the side of the MOSFET 10.

[0095] In this embodiment, the relative positions of the MOSFET 10 and the heat dissipation surface 331 can be acquired using a camera or CCD camera to obtain their position information. Then, the first fixing adhesive layer 50 is placed on the heat dissipation surface 331 and abuts against the side of the MOSFET 10 using this position information, thereby realizing the automated setting of the first fixing adhesive layer 50. When the size or style of the MOSFET 10 changes, compared with the existing steps of replacing the limiting fixture of different sizes, this application directly realizes the setting of the first fixing adhesive layer 50 through image acquisition, reducing the production cost in the workshop.

[0096] Furthermore, based on the first embodiment, a third embodiment of the present invention is proposed, combining... Figure 8As shown, the heat dissipation assembly 30 includes a heat sink 31 and a thermally conductive insulating member 33. The thermally conductive insulating member 33 is disposed on the heat sink 31 and forms a heat dissipation surface 331. The step S10 of mounting the surface of the MOSFET 10 with the first thermally conductive layer 40 on the mounting position of the heat dissipation assembly 30 includes:

[0097] Step S11: The thermally conductive insulating component 33 is placed on the heat sink 31.

[0098] Step S12: The first thermally conductive layer 40 is placed at the mounting position of the thermally conductive insulating component 33.

[0099] Step S13: Mount the MOS transistor 10 onto the mounting position of the thermally conductive insulating component 33.

[0100] In this embodiment, the MOSFET 10 is first mounted on the heat dissipation surface 331 of the thermally conductive insulating component 33, thus completing the mounting process between the MOSFET 10 and the thermally conductive insulating component 33. Then, the thermally conductive insulating component 33 is placed on the heat sink 31, thus completing the mounting of the thermally conductive insulating component 33 on the heat sink 31. In some embodiments, after step S12, the MOSFET 10, the thermally conductive insulating component 33, and the heat sink 31 can be brought closer together under pressure. Under pressure, the three components can be brought closer together, thereby achieving better heat conduction and dissipation.

[0101] Furthermore, based on the third embodiment, a fourth embodiment of the present invention is proposed, combining... Figure 9 As shown, the power module 100 also includes a second thermally conductive layer 70 and a second adhesive layer 90. Step S12, which involves placing the thermally conductive insulating component 33, on which the MOSFET 10 is mounted, onto the heat sink 31, includes:

[0102] Step S121: The second thermally conductive layer 70 is disposed on the heat sink 31, and the thermally conductive insulating component 70 is disposed on the second thermally conductive layer 70.

[0103] Step S122: The second fixing adhesive layer 90 is placed on the heat sink 31 and abuts against the side of the thermally conductive insulating member 33.

[0104] In step S123, the second fixing adhesive layer 90 is cured, and the thermally conductive insulating component 33 is positioned on the heat sink 31.

[0105] In step S124, the second thermally conductive layer 70 is thermally cured, and the thermally conductive insulating component 33 is fixedly installed at the mounting position.

[0106] In this embodiment, by placing the second fixing adhesive layer 90 on the heat sink 31 and abutting the side of the thermally conductive insulating member 33, the application achieves the limitation of the thermally conductive insulating member 33 on the heat sink 31 by curing the second fixing adhesive layer 90 before the second thermally conductive layer 70 is thermally cured. This eliminates the need for the limiting fixture, and the elimination of the limiting fixture reduces the steps of assembling and disassembling the limiting fixture, thereby improving the work efficiency of the workshop. Furthermore, in the step of thermally curing the second thermally conductive layer 70, it is not necessary to place the limiting fixture into the curing equipment, reducing the steps and improving the utilization rate of the curing equipment.

[0107] Furthermore, based on the fourth embodiment, a fifth embodiment of the present invention is proposed, combining... Figure 10 As shown, step S122, which involves placing the second adhesive layer 90 on the heat sink 31 and abutting against the side of the thermally conductive insulating member 33, includes:

[0108] Step S1221: Image acquisition is performed on the relative positions of the thermally conductive insulating component 33 and the heat sink 31 to obtain positional information between the thermally conductive insulating component 33 and the heat sink 31.

[0109] In step S1222, the second fixing adhesive layer 90 is disposed on the heat sink 31 and abuts against the side of the thermally conductive insulating component 33 based on the position information between the thermally conductive insulating component 33 and the heat sink 31.

[0110] In this embodiment, the relative positions of the heat sink 31 and the thermally conductive insulating component 33 can be acquired using a camera or CCD camera to obtain their position information. Then, the second fixing adhesive layer 90 is placed on the heat sink 31 and abuts against the side of the thermally conductive insulating component 33 using this position information, realizing the automated setting of the second fixing adhesive layer 90. Furthermore, when the size or style of the thermally conductive insulating component 33 changes, compared to the existing method of replacing different sized limiting fixtures, this application directly achieves the setting of the second fixing adhesive layer 90 through image acquisition, reducing the production cost in the workshop.

[0111] The above description is merely a preferred embodiment of the present invention and does not limit the patent scope of the present invention. Any equivalent structural transformations made using the contents of the present invention's specification and drawings under the inventive concept of the present invention, or direct / indirect applications in other related technical fields, are included within the patent protection scope of the present invention.

Claims

1. A power module, characterized in that, The power module includes: MOSFET; A heat dissipation assembly, the heat dissipation assembly having a heat dissipation surface, the heat dissipation surface having a mounting position, and the MOSFET being disposed at the mounting position; A first thermally conductive layer, sandwiched between the heat dissipation surface and the MOS transistor; and The first fixing adhesive layer is applied to the heat dissipation surface after the MOSFET is mounted, and abuts against the side of the MOSFET. The first fixing adhesive layer is used to limit the MOSFET to the mounting position after curing.

2. The power module as described in claim 1, characterized in that, The MOSFET includes: A tube body, wherein the tube body is disposed at the mounting position, a first thermally conductive layer is sandwiched between the heat dissipation surface and the tube body, and a first fixing adhesive layer abuts against the side of the tube body; and Multiple pins are mounted on the tube body and electrically connected to the tube body.

3. The power module as described in claim 2, characterized in that, The tube body has a square structure and has at least one set of diagonals; The tube body has two sides, one side of the tube body is located at the opposite corner of the tube body, and the first fixing adhesive layer is located at the opposite corner of the tube body.

4. The power module as described in claim 1, characterized in that, The MOS transistor is provided with at least two, the heat dissipation assembly has a length direction, and at least two MOS transistors are arranged at intervals along the length direction of the heat dissipation assembly; And / or, the heat dissipation surface is provided in two, and the two heat dissipation surfaces are provided on opposite sides of the heat dissipation component. The MOS transistor is provided in at least two, and one MOS transistor is correspondingly provided on one heat dissipation surface of the heat dissipation component.

5. The power module as described in any one of claims 1 to 4, characterized in that, The heat dissipation component includes: Radiator; and A thermally conductive insulating component is disposed on the heat sink and forms the heat dissipation surface, and the first thermally conductive layer is sandwiched between the thermally conductive insulating component and the MOS transistor.

6. The power module as described in claim 5, characterized in that, The power module also includes a second thermally conductive layer and a second adhesive layer; The second thermally conductive layer is sandwiched between the heat sink and the thermally conductive insulating component. The second fixing adhesive layer is disposed on the heat sink and abuts against the side of the thermally conductive insulating component. The second fixing adhesive layer is used to limit the thermally conductive insulating component to be disposed on the heat sink after curing.

7. The power module as described in claim 6, characterized in that, The thermally conductive insulating component has a square structure and at least one set of diagonals; The thermally conductive insulating component has two sides, one side of which is located at the opposite corner of the other thermally conductive insulating component, and the second fixing adhesive layer is located at the opposite corner of the thermally conductive insulating component.

8. The power module as described in claim 6, characterized in that, The thermally conductive insulating component is a ceramic sheet or an aluminum substrate.

9. The power module as described in claim 6, characterized in that, The first and / or second fixing adhesive layers are UV adhesives.

10. The power module as described in claim 5, characterized in that, The thermally conductive insulating component is a thermally conductive adhesive film, with one side of the thermally conductive adhesive film adhered to the first thermally conductive layer and the other side of the thermally conductive adhesive film adhered to the heat dissipation surface.

11. A power controller, characterized in that, The power controller includes the power module as described in any one of claims 1 to 10.

12. An electric vehicle, characterized in that, The electric vehicle includes the power controller as described in claim 11.

13. A method for assembling a power module, characterized in that, The assembly method is used to assemble the power module as described in any one of claims 1 to 10, and the assembly method includes the following steps: The first thermally conductive layer is disposed at the mounting position of the heat dissipation component, and the MOS transistor is attached to the mounting position of the heat dissipation component. The first fixing adhesive layer is disposed on the heat dissipation surface and abuts against the side of the MOS transistor; The first fixing adhesive layer is cured, and the MOS transistor is positioned at the mounting position. The first thermally conductive layer is thermally cured, and the MOS transistor is fixedly installed at the mounting position.

14. The assembly method of the power module as described in claim 13, characterized in that, The step of placing the first fixing adhesive layer on the heat dissipation surface and abutting against the side of the MOSFET includes: Image acquisition is performed on the relative position of the MOS transistor and the heat dissipation surface to obtain positional information between the MOS transistor and the heat dissipation surface; Based on the positional information between the MOS transistor and the heat dissipation surface, the first fixing adhesive layer is disposed on the heat dissipation surface and abuts against the side of the MOS transistor.

15. The assembly method of the power module as described in claim 13, characterized in that, The heat dissipation assembly includes a heat sink and a thermally conductive insulating component. The thermally conductive insulating component is disposed on the heat sink and forms the heat dissipation surface. The step of disposing the first thermally conductive layer at the mounting position of the heat dissipation assembly and attaching the MOSFET to the mounting position of the heat dissipation assembly includes: The thermally conductive insulating component is disposed on the heat sink; The first thermally conductive layer is disposed at the mounting position of the thermally conductive insulation component; The MOS transistor is mounted on the mounting position of the thermally conductive insulator.

16. The assembly method of the power module as described in claim 15, characterized in that, The power module further includes a second thermally conductive layer and a second adhesive layer. The step of placing the thermally conductive insulating component with the mounted MOSFET on the heat sink includes: The second thermally conductive layer is disposed on the heat sink, and the thermally conductive insulating component is disposed on the second thermally conductive layer; The second fixing adhesive layer is disposed on the heat sink and abuts against the side of the thermally conductive insulation component; The second fixing adhesive layer is cured, and the thermally conductive insulating component is positioned on the heat sink. The second thermally conductive layer is thermally cured, and the thermally conductive insulating component is fixedly installed at the mounting position.

17. The assembly method of the power module as described in claim 16, characterized in that, The step of placing the second fixing adhesive layer on the heat sink and abutting against the side of the thermally conductive insulation includes: Image acquisition is performed on the relative positions of the thermally conductive insulating component and the heat sink to obtain positional information between the thermally conductive insulating component and the heat sink; The second fixing adhesive layer is disposed on the heat sink and abuts against the side of the thermally conductive insulating component based on the positional information between the thermally conductive insulating component and the heat sink.

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