Light emitting diode and light emitting device

Abstract

The application relates to the technical field of semiconductor photoelectric devices, in particular to a light-emitting diode and a light-emitting device. The light-emitting diode comprises a semiconductor epitaxial stack, a first conductive type semiconductor layer, a light-emitting layer and a second conductive type semiconductor layer which are sequentially arranged; an interface transition layer is arranged on the semiconductor epitaxial stack; a first insulating layer is arranged between the interface transition layer and the semiconductor epitaxial stack; and a metal layer covers part of the surface of the interface transition layer and is electrically connected with the semiconductor epitaxial stack. The light-emitting diode provided by the application has high reliability.

Description

Technical Field

[0001] This invention relates to the field of semiconductor optoelectronic device technology, and in particular to a light-emitting diode and a light-emitting device. Background Technology

[0002] A light-emitting diode (LED) is a solid-state semiconductor light-emitting device that comprises various light-emitting materials and components. Due to its advantages such as low cost, low power consumption, high luminous efficiency, small size, energy saving, environmental friendliness, and excellent photoelectric properties, it is widely used in various applications including lighting, visible light communication, and light-emitting displays. However, existing LEDs suffer from insufficient adhesion between the metal layer and the insulating layer. Summary of the Invention

[0003] To address the insufficient adhesion of the metal layer to the insulating layer in existing light-emitting diodes, this invention provides a light-emitting diode with high reliability.

[0004] The technical solutions adopted in the embodiments of the present invention are as follows:

[0005] Specifically, one embodiment of the present invention provides a light-emitting diode, comprising:

[0006] A semiconductor epitaxial stack includes a first conductivity type semiconductor layer, a light-emitting layer, and a second conductivity type semiconductor layer stacked sequentially.

[0007] An interface transition layer is located on the semiconductor epitaxial stack;

[0008] A first insulating layer is provided between the interface transition layer and the semiconductor epitaxial stack;

[0009] A metal layer covers a portion of the surface of the interface transition layer and is electrically connected to the semiconductor epitaxial stack.

[0010] The present invention improves the reliability of light-emitting diodes by setting an interface transition layer comprising an insulating metal oxide or a stack of insulating metal oxides to improve the adhesion between the metal layer and the insulating layer.

[0011] Other features and beneficial effects of the invention will be set forth in the following description, and will be apparent in part from the description, or may be learned by practicing the invention. The objects and other beneficial effects of the invention can be realized and obtained by means of the structures particularly pointed out in the description, claims and drawings. Attached Figure Description

[0012] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort. Unless otherwise specified, the positional relationships shown in the drawings in the following description are based on the direction in which the components are drawn in the figure.

[0013] Figure 1 This is a top view schematic diagram of a light-emitting diode according to an embodiment of the present invention;

[0014] Figure 2 This is a side cross-sectional view of the light-emitting diode according to Embodiment 1 of the present invention;

[0015] Figure 2A What is shown is Figure 2 Enlarged schematic diagram of the structure within the dashed box;

[0016] Figure 2B The illustration shows Embodiment 2 of the present invention. Figure 2 Enlarged schematic diagram of the structure within the dashed box;

[0017] Figure 2C The illustration shows a variation of Embodiment 1 of the present invention. Figure 2 Enlarged schematic diagram of the structure within the dashed box;

[0018] Figure 2D The illustration shows another variation of Embodiment 1 of the present invention. Figure 2 Enlarged schematic diagram of the structure within the dashed box;

[0019] Figure 3 This is a side cross-sectional view of the light-emitting diode according to Embodiment 3 of the present invention;

[0020] Figure 3A What is shown is Figure 3 Enlarged schematic diagram of the structure within the dashed box;

[0021] Figure 4 This is a schematic cross-sectional view of the light-emitting diode according to Embodiment 4 of the present invention;

[0022] Figure 5 for Figure 4 A cross-sectional schematic diagram of a modified example of a light-emitting diode in Embodiment 4 is shown;

[0023] Figure 6 This is a schematic cross-sectional view of the light-emitting diode according to Embodiment 5 of the present invention;

[0024] Figure 7 for Figure 6A cross-sectional schematic diagram of a modified example of a light-emitting diode according to Embodiment 5 is shown;

[0025] Figure 8 This is a top view schematic diagram of a portion of the structure of the light-emitting diode according to Embodiment Six of the present invention;

[0026] Figure 9 This is a side view schematic diagram of the light-emitting diode provided in Embodiment Six;

[0027] Figure 9A The diagram shown is an enlarged view of the structure within the dashed box in Figure A.

[0028] Figure 9B The illustration shows Embodiment Six of the present invention. Figure 9 Example 1 of a variation of the structure within the dashed frame;

[0029] Figure 9C The illustration shows Embodiment Six of the present invention. Figure 9 Example 2 of the deformation of the structure within the dashed frame;

[0030] Figure 10 This is a side view of the light-emitting diode according to Embodiment 7 of the present invention.

[0031] Figure 10A What is shown is Figure 10 Enlarged schematic diagram of the structure within the dashed box;

[0032] Figure 10B The illustration shows Embodiment Seven of the present invention. Figure 10 Example 1 of a variation of the structure within the dashed frame;

[0033] Figure 11 This is a schematic cross-sectional view of the light-emitting diode according to Embodiment 8 of the present invention;

[0034] Figure 12 This is a schematic cross-sectional view of the light-emitting diode according to Embodiment 9 of the present invention;

[0035] Figure 13 This is a schematic cross-sectional view of the light-emitting diode according to Embodiment 10 of the present invention;

[0036] Figure 14 This is a schematic cross-sectional view of the light-emitting diode according to Embodiment Eleven of the present invention;

[0037] Figure 15 This is a schematic diagram of the structure of a light-emitting device provided by the present invention.

[0038] Figure label:

[0039] 10-Substrate; 11-Upper surface; 12-Lower surface; 20-Semiconductor epitaxial stack; 21-First conductivity type semiconductor layer; 22-Light emitting layer; 23-Second conductivity type semiconductor layer; 24-Recess; 30-Interface transition layer; 301-First via structure; 302-Third via structure; 40-Current spreading layer; 50-First insulating layer; 51-First portion; 52-Second portion; 501-Second via structure; 502-Fourth via structure; 521-Fifth via structure; 60-Metal layer; 61-Metal reflective layer; 62-Metal barrier layer; 7 0-Second insulating layer; 701-Sixth through-hole structure; 81-First electrode; 82-Second electrode; 83-First pad electrode; 84-Second pad electrode; 85-Top electrode; 86-Back electrode; 90-Third insulating layer; 901-Seventh through-hole structure; 100-Bonding layer; 110-Conductive substrate; 120-Conductive connection layer; 130-Support; 131-Bottom; 131A-Mounting area; 131B-First bonding area; 131C-Second bonding area; 140-Encapsulation layer; 200-Flip LED; d1-First gap; d2-Second gap. Detailed Implementation

[0040] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. The technical features designed in the different embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without creative effort are within the scope of protection of the present invention.

[0041] The same reference numerals and / or designations may be used repeatedly in the different embodiments disclosed below. These repetitions are for the purpose of simplicity and clarity and are not intended to limit any specific relationship between the different embodiments and / or structures discussed;

[0042] To achieve at least one or more of the aforementioned advantages, an embodiment of the present invention provides a light-emitting diode comprising: a semiconductor epitaxial stack 20, an interface transition layer 30, a first insulating layer 50, and a metal layer 60.

[0043] A semiconductor epitaxial stack 20 is disposed on a substrate 10. The substrate 10 may be a transparent substrate 10, a non-transparent substrate 10, or a semi-transparent substrate 10, having opposing upper surfaces 11 and lower surfaces 12. The transparent or semi-transparent substrate 10 allows light radiated from the semiconductor epitaxial stack 20 to pass through the upper surface 11 of the substrate 10 to the lower surface 12 of the substrate 10, which is away from the semiconductor epitaxial stack 20. For example, the substrate 10 may be a growth substrate used to grow the semiconductor epitaxial stack 20, including sapphire substrates, silicon nitride substrates, silicon substrates, gallium nitride substrates, aluminum nitride substrates, etc. However, the embodiments disclosed herein are not limited thereto. The thickness of the substrate 10 preferably does not exceed the short side length of the chip. In some embodiments, the thickness of the substrate 10 is less than 300 μm, for example, it may be 200 μm, 100 μm, or 80 μm. Furthermore, in some embodiments, the substrate 10 may be thinned or removed to form a thin-film chip.

[0044] The substrate 10 may include an uneven structure (not shown) formed on at least a portion of its upper surface 11. This uneven structure can improve the external light extraction efficiency and crystallinity of the semiconductor layers constituting the semiconductor epitaxial stack 20. For example, a common example is a dome-shaped protrusion; alternatively, it can be various other shapes, such as a platform, cone, triangular pyramid, hexagonal pyramid, quasi-conical, quasi-triangular pyramid, or quasi-hexagonal pyramid, or combinations thereof. Furthermore, the uneven structure can be selectively formed in various regions, such as the lower surface 12 of the substrate 10, to improve light extraction efficiency, or it can be omitted. In some embodiments, the material of the uneven structure can be the same as or different from the material of the substrate 10. In this case, its refractive index is preferably lower than that of the substrate, which is beneficial for improving the light extraction efficiency of the chip. In other embodiments, the uneven structure can also be a multilayer structure with different material layers having different refractive indices, which will not be elaborated further here.

[0045] The semiconductor epitaxial stack 20 includes a first conductivity type semiconductor layer 21, a light-emitting layer 22, and a second conductivity type semiconductor layer 23 sequentially stacked. The material of the semiconductor epitaxial stack includes Al. x In y Ga (1-x-y) N or Al x In y Ga (1-x-y)P is a group III-V semiconductor material, where 0≤x, y≤1; x+y≤1. Depending on the material of the light-emitting layer, when the semiconductor epitaxial stack material is of the AlInGaP series, it can emit red light with wavelengths between 610nm and 650nm or yellow light with wavelengths between 550nm and 570nm. When the semiconductor epitaxial stack material is of the InGaN series, it can emit blue or deep blue light with wavelengths between 400nm and 490nm or green light with wavelengths between 490nm and 550nm. When the semiconductor epitaxial stack material is of the AlGaN series, it can emit UV light with wavelengths between 400nm and 250nm. The light-emitting layer 22 can be a single heterostructure (SH), a double heterostructure (DH), a double-side double heterostructure (DDH), or a multi-quantum well (MQW). The material of the light-emitting layer 22 can be an i-type, p-type, or n-type semiconductor.

[0046] Before forming the first conductivity type semiconductor layer 21, a buffer layer (not shown) may be formed on the upper surface 11 of the substrate 10 to improve the lattice mismatch between the substrate 10 and the semiconductor epitaxial stack 20. The buffer layer may be made of gallium nitride (GaN) series materials.

[0047] It should be noted that the light-emitting diode of the present invention is not limited to containing only one semiconductor epitaxial stack 20, but may also contain multiple semiconductor epitaxial stacks 20 located on a substrate 10, wherein the multiple semiconductor epitaxial stacks 20 may have a wire structure to electrically connect the multiple semiconductor epitaxial stacks 20 to each other on the substrate 10 in a series, parallel, series-parallel or other manner.

[0048] Optionally, a current spreading layer 40 may be disposed on the semiconductor epitaxial stack 20 to spread the current, making the current distribution more uniform, reducing the operating voltage of the light-emitting diode, and improving the light-emitting diode's light-emitting performance. The current spreading layer 40 may be made of a transparent conductive material, which may include indium tin oxide (ITO), indium zinc oxide (IZO), indium oxide (InO), tin oxide (SnO), cadmium tin oxide (CTO), antimony tin oxide (ATO), aluminum zinc oxide (AZO), zinc tin oxide (ZTO), gallium-doped zinc oxide (GZO), tungsten-doped indium oxide (IWO), or zinc oxide (ZnO), but the embodiments disclosed herein are not limited thereto.

[0049] The thickness of the current spreading layer 40 is generally not limited, but in a preferred embodiment, it can be approximately [thickness value missing]. to Within a certain range of thickness, even better, it can be... to If the current spreading layer 40 is too thick, it will absorb light passing through it, resulting in light loss. Therefore, the thickness of the current spreading layer 40 is generally limited to a certain value. the following.

[0050] The first insulating layer 50 is located on the semiconductor epitaxial stack 20, and the first insulating layer 50 may be SiO2, SiN, or SiO2. x N yThe first insulating layer 50 is formed by repeatedly stacking one of the following materials: TiO2, Si3N4, Al2O3, TiN, AlN, ZrO2, TiAlN, TiSiN, HfO2, TaO2, or MgF2, or by stacking two or more materials repeatedly. The first insulating layer 50 has different functions depending on its location. For example, the first insulating layer 50 covering the sidewalls of the semiconductor epitaxial stack 20 can be used to prevent leakage current from conductive materials, connecting the first conductive type semiconductor layer 21, the light-emitting layer 22, and the second conductive type semiconductor layer 23, reducing short-circuit abnormalities in the light-emitting diode. Alternatively, the first insulating layer 50 located on the surface of the semiconductor epitaxial stack 20 near the second conductive type semiconductor layer 23 can be made of a reflective insulating material, which can be used to reflect light and block different electrodes in the light-emitting diode, but the embodiments disclosed herein are not limited to this. The second insulating layer 70 has a patterned second via structure 501, allowing the metal layer 60 to be electrically connected to the current spreading layer 40 via the second via structure 501. To ensure good insulation and leakage prevention performance of the first insulating layer 50, in some preferred embodiments, the thickness of the first insulating layer 50 is selected to be between 50 and 2400 nm, for example, it can be above 200 nm, above 300 nm, or above 1 μm. The diameter of the second through-hole structure 501 can be above 3 μm and below 20 μm, more preferably above 6 μm and below 12 μm. If the diameter of the second through-hole structure 501 is too small, it can easily cause current congestion, leading to voltage increase. The spacing between adjacent second through-hole structures 501 can be above 10 μm and below 50 μm.

[0051] The interface transition layer 30 is located on the semiconductor epitaxial stack 20, and it can be an insulating metal oxide or a stack of insulating metal oxides. In the prior art, the common structure is to have the metal layer 60 in direct contact with the insulating layer (SiO2), which results in insufficient adhesion of the metal layer 60 to the insulating layer and easy detachment of the metal layer 60. In this invention, the insulating metal oxide and the metal material have a better correlation. The structure in which the metal layer 60 formed by the metal material is in direct contact with the interface transition layer 30 formed by the insulating metal oxide, instead of the structure of the first insulating layer 50, can effectively improve the adhesion of the metal layer 60 in the light-emitting diode, that is, the adhesion in the chip structure, thereby improving the reliability of the light-emitting diode. Preferably, the insulating metal oxide may include at least one of TiO2, ZrO2, HfO2, Ta2O5, Al2O3, Nb2O5, Y2O3, MgO, La2O3, SrTiO3, BaTiO3, or CeO2. These materials have high density and better side coverage of the semiconductor epitaxial stack 20, thereby further improving the reliability of the chip.

[0052] The thickness of the interface transition layer 30 can be above 3 nm and below 400 nm to complete the film formation of the insulating metal oxide, giving it a complete interface and thus forming good adhesion at the interface in contact with the metal layer 60. Furthermore, the interface transition layer 30 formed by the insulating metal oxide can improve the reliability of the metal layer 60 by increasing its thickness within a certain range. In a preferred embodiment, to ensure superior adhesion of the metal layer 60 to the interface transition layer 30, the thickness of the interface transition layer 30 is preferably below 200 nm, effectively reducing the stress increase caused by excessive thickness and minimizing the risk of peeling off the metal layer 60. In some embodiments, to meet actual production needs, the thickness of the interface transition layer 30 can be above 10 nm and below 200 nm; in other embodiments, the thickness of the interface transition layer 30 can be above 20 nm and below 100 nm, or above 20 nm and below 50 nm, to form a better optical film effect. The interface transition layer 30 can be implemented using processes such as vapor deposition and atomic layer deposition. For example, atomic layer deposition with a thickness of 3 nm can achieve a good film formation. In other embodiments, the refractive index of the interface transition layer 30 can be above 1.5 and below 3.5. With a certain thickness and refractive index, the interface transition layer 30 can not only improve the adhesion of the metal layer 60, but also form an optical functional layer with a changing refractive index through its own stacking or in conjunction with the first insulating layer 50, thereby improving light extraction efficiency. The interface transition layer 30 can have a patterned first via structure 301 so that the metal layer 60 can be electrically connected to the current spreading layer 40 through the first via structure 301. The diameter of the first via structure 301 can be above 3 μm and below 20 μm, more preferably above 6 μm and below 12 μm. If the diameter of the first via structure 301 is too small, it can easily cause current congestion, leading to voltage increase. The spacing between adjacent first through-hole structures 301 can be greater than 10μm and less than 50μm.

[0053] The metal layer 60 covers part of the surface of the interface transition layer 30. To ensure good luminous efficiency of the light-emitting diode, the metal layer 60 may include a metal reflective layer 61, the material of which may include Ag, Al, Rh, etc. The metal layer 60 may also include a metal barrier layer 62, which covers the surface of the metal reflective layer 61. This surface can be understood as the upper surface and edge sidewalls, to prevent diffusion of the metal reflective layer 61. The material of this barrier layer may include TiW, Cr, Pt, Ti, Ni, W, etc.

[0054] The light-emitting diode further includes a second insulating layer 70, which is located on the first insulating layer 50, and optionally covers a portion of the upper surface of the first insulating layer 50 and a portion of the upper surface and sidewalls of the metal layer 60, or covers a portion of the upper surface of the interface transition layer 30 and a portion of the upper surface and sidewalls of the metal layer 60. The second insulating layer 70 may be SiO2, SiN, or SiO2. x N y The second insulating layer 70 can be one of the following: TiO2, Si3N4, Al2O3, TiN, AlN, ZrO2, TiAlN, TiSiN, HfO2, TaO2, or MgF2, or a Bragg reflector (DBR) formed by repeatedly stacking two or more materials. In some embodiments, the second insulating layer 70 can be an insulating reflective layer, which can be a multilayer film structure formed by alternating stacks of dielectric films with different high refractive indices and dielectric films with different low refractive indices. The high refractive index dielectric film can be made of TiO2, NB2O5, TA2O5, HfO2, ZrO2, etc.; the low refractive index dielectric film can be made of SiO2, MgF2, Al2O5, SiON, etc. This configuration allows the second insulating layer 70 to have better reflective properties and the light-emitting diode to have better light extraction efficiency. However, the embodiments disclosed herein are not limited to this, and this implementation method is also applicable to the first insulating layer 50 described above and the third insulating layer 90 described below. The second insulating layer 70 has a patterned sixth through-hole structure 701, which allows the metal electrode to be electrically connected to the metal layer 60 via the sixth through-hole structure 701. In order to give the second insulating layer 70 better insulation protection and leakage prevention performance, in some preferred embodiments, the thickness of the second insulating layer 70 is selected to be between 50 and 2400 nm.

[0055] The light-emitting diode further includes one or more first electrodes 81 located on a first conductivity type semiconductor layer 21 for electrical connection to the first conductivity type semiconductor layer 21, and one or more second electrodes 82 located on a second conductivity type semiconductor layer 23 for electrical connection to the second conductivity type semiconductor layer 23. For example, the first electrodes 81 can be electrically connected to the first conductivity type semiconductor layer 21 through some of the sixth via structures 701 located on the second insulating layer 70, and the second electrodes 82 can be electrically connected to the metal layer 50 through other of the sixth via structures 701 located on the second insulating layer 70. The first electrodes 81 and the second electrodes 82 can be formed simultaneously in a unified process using the same materials. For example, the first electrodes 81 and the second electrodes 82 can be metal electrodes, using nickel, gold, chromium, titanium, platinum, palladium, rhodium, iridium, aluminum, tin, indium, tantalum, copper, cobalt, iron, ruthenium, zirconium, tungsten, molybdenum, and combinations thereof, but the embodiments disclosed herein are not limited thereto. The width of the sixth through-hole structure 701 can be greater than 3μm and less than 20μm, more preferably greater than 6μm and less than 12μm.

[0056] The light-emitting diode further includes a first pad electrode 83, a second pad electrode 84, and a third insulating layer 90. The third insulating layer 90 is located on the second insulating layer 70, and the first pad electrode 83 and the second pad electrode 84 are disposed on the third insulating layer 90. The third insulating layer 90 has patterned seventh via structures 901. The first pad electrode 83 can contact the first electrode 81 through some of the seventh via structures 901 on the third insulating layer 90 to electrically connect to the first conductivity type semiconductor layer 21. The second pad electrode 84 can contact the second electrode 82 through other seventh via structures 901 on the third insulating layer 90 to electrically connect to the second conductivity type semiconductor layer 23. The third insulating layer 90 can be SiO2, SiN, or SiO2. x N y The materials used are TiO2, Si3N4, Al2O3, TiN, AlN, ZrO2, TiAlN, TiSiN, HfO2, TaO2, or MgF2, or a Bragg reflector (DBR) formed by repeated stacking of two or more materials, but the embodiments disclosed herein are not limited thereto. The first pad electrode comprises an alloy or stack of Ti, Al, Pt, Au, Ni, Sn, or any combination thereof. The second pad electrode comprises an alloy or stack of Ti, Al, Pt, Au, Ni, Sn, or any combination thereof.

[0057] To make the objectives, features and advantages of the present invention more apparent and understandable, specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0058] Figure 1 This is a top view schematic diagram of a light-emitting diode according to an embodiment of the present invention. Figure 2 for Figure 1 A schematic cross-sectional view of one side of a light-emitting diode. Figure 2A What is shown is Figure 2 An enlarged schematic diagram of the structure within the dashed box. It should be noted that... Figure 2 The light-emitting diode is shown along the A-A' section.

[0059] Please also refer to Figure 1 , Figure 2 and Figure 2A The light-emitting diode of this embodiment includes at least one semiconductor epitaxial stack 20 disposed on a substrate 10. The semiconductor epitaxial stack 20 has a first conductivity type semiconductor layer 21, a light-emitting layer 22, and a second conductivity type semiconductor layer 23 stacked sequentially from bottom to top. The semiconductor epitaxial stack 20 has one or more mesa surfaces, which allow a portion of the second conductivity type semiconductor layer 23 and the light-emitting layer 22 to be removed, exposing a portion of the surface of the first conductivity type semiconductor layer 21. These mesa surfaces may be located inside the semiconductor epitaxial stack 20, or at the edge region of the semiconductor epitaxial stack 20, or simultaneously at the inside and edge regions of the semiconductor epitaxial stack 20. The exposed portion of the upper surface of the first conductivity type semiconductor layer 21 can be used to achieve an electrical connection with the first conductivity type semiconductor layer 21.

[0060] Please continue to refer to this. Figure 2 and Figure 2A A current spreading layer 40 for spreading current is disposed on the second conductivity type semiconductor layer 23; the first insulating layer 50 covers the sidewalls of the semiconductor epitaxial stack 20, the edge of part of the upper surface, and the surface of the current spreading layer 40 near the metal layer 60. Figure 2 The first insulating layer 50 schematically covers the upper surface and sidewalls of the current spreading layer 40, and has a patterned second through-hole structure 501 through which a portion of the upper surface of the current spreading layer 40 can be exposed; interface transition layer 30 ( Figure 1(Not shown in the image) Covers the upper surface of the first insulating layer 50. In this embodiment, the interface transition layer 30 is made of insulating metal oxide, and the interface transition layer 30 has a patterned first via structure 301, through which a portion of the upper surface of the current spreading layer 40 can be exposed. The metal layer 60 includes a metal reflective layer 61 and a metal blocking layer 62. The metal reflective layer 61 is located above the semiconductor epitaxial stack 20, covering a portion of the interface transition layer 30, and at least partially contacts the current spreading layer 40 through the first via structure 301 and the second via structure 501. The metal blocking layer 62 is located on the metal reflective layer 61, covering the sidewalls and a portion of the upper surface of the metal reflective layer 61, thus preventing metal reflection. Material migration occurs in layer 61. In the chip structure described in Embodiment 1, the use of an insulating metal oxide as the interface transition layer 30 and its direct contact with the metal reflective layer 61 effectively improves the adhesion of the metal layer 60. Furthermore, the use of a first insulating layer 50 and an interface transition layer 30 (an insulating metal oxide) as insulating layers, together with the metal layer 60 (metal reflective layer 61), forms an all-around reflector. Specifically, on the one hand, it increases the adhesion between the metal layer 60 (metal reflective layer 61) and the first insulating layer 50; on the other hand, it can form an optical functional layer with a gradually changing refractive index, thereby improving the light extraction efficiency. Moreover, due to the density of the insulating metal oxide, its side coverage is better when combined with a certain thickness, which can effectively improve the reliability of the light-emitting diode.

[0061] Please continue to refer to this. Figure 2 and Figure 2A The second insulating layer 70 is located on the first insulating layer 50. In this embodiment, it covers part of the upper surface of the interface transition layer 30 and part of the upper surface and sidewalls of the metal layer 60. The second insulating layer 70 has a patterned sixth through-hole structure 701. A first electrode 81 and a second electrode 82 are respectively disposed on the second insulating layer 70. The first electrode 81 is electrically connected to the first conductive type semiconductor layer 21 at the exposed mesa through some of the sixth through-hole structures 701, while the second electrode 82 is electrically connected to the metal barrier layer 62 through other sixth through-hole structures 701. The third insulating layer 90 is located on the second insulating layer 70, and the first pad electrode 83 and the second pad electrode 84 are arranged on the third insulating layer 90. The third insulating layer 90 has patterned seventh via structures 901, and the first pad electrode 83 can contact the first electrode 81 through some of the seventh via structures 901 located on the second insulating layer 70 to be electrically connected to the first conductive type semiconductor layer 21. The second pad electrode 84 can contact the second electrode 82 through some of the seventh via structures 901 located on the second insulating layer 70 to be electrically connected to the second conductive type semiconductor layer 23.

[0062] Figure 2B The illustration shows Embodiment 2 of the present invention. Figure 2 Enlarged schematic diagram of the structure within the dashed box.

[0063] Please also refer to Figure 2 and Figure 2B In this embodiment, the first through-hole structure 301 and the second through-hole structure 501 on the interface transition layer 30 and the first insulating layer 50 are less numerous than in the first embodiment. As a result, the interface transition layer 30 has a larger area and is more complete. As a result, the metal layer 60 has more and more continuous contact surfaces with the interface transition layer 30, which can effectively improve the adhesion of the metal layer 60 and thus improve the reliability of the light-emitting diode.

[0064] In some embodiments, the contact surface between the interface transition layer 30 and the metal layer 60 may be formed by different insulating metal oxides to create a continuous or discontinuous alternating surface. Figure 2C The illustration shows a variation of Embodiment 1 of the present invention. Figure 2 Enlarged schematic diagram of the structure within the dashed box; Figure 2D The illustration shows another variation of Embodiment 1 of the present invention. Figure 2 Enlarged schematic diagram of the structure within the dashed box.

[0065] For example, please also refer to Figure 2 and Figure 2C In this embodiment, the first insulating layer 50 is simultaneously covered with an interface transition layer 30 formed by alternating layers of different materials. Figure 2C (Only two different materials are shown schematically), and the metal layer 60 covering it can effectively improve the adhesion of the metal layer 60 by contacting the interface transition layer 30 formed by different materials at the same time, thereby improving the reliability of the light-emitting diode.

[0066] Please refer to the following at the same time: Figure 2 and Figure 2D In this embodiment, the first insulating layer 50 is covered with different numbers of interface transition layers 30 in different regions. Figure 2C (Only single and double layer alternating structures are schematically shown in the diagram.) Furthermore, the interface transition layers 30 with different numbers of layers can be composed of interface transition layers 30 formed of the same material or interface transition layers 30 formed of different materials. The metal layer 60 covering it can not only effectively improve the adhesion of the metal layer 60 by simultaneously contacting the interface transition layers 30 formed of different insulating metal oxides, but also, due to the "rough-like" surface formed by the height difference in different areas, can further improve the adhesion of the metal layer 60 on the entire interface transition layer 30, thereby improving the reliability of the light-emitting diode.

[0067] Figure 3 This is a side cross-sectional view of the light-emitting diode according to Embodiment 3 of the present invention. Figure 3A What is shown is Figure 3 An enlarged schematic diagram of the structure within the dashed box. It should be noted that... Figure 3 The light-emitting diode is shown along the A-A' section.

[0068] Please also refer to Figure 1 , Figure 3 and Figure 3A The light-emitting diode of this embodiment includes at least one semiconductor epitaxial stack 20 disposed on the substrate 10. This part of the structure is basically the same as that of embodiment one, and will not be described in detail here.

[0069] Please continue to refer to this. Figure 3 and Figure 3A A first insulating layer 50 covers the upper surface and sidewalls of the semiconductor epitaxial stack 20. In this embodiment, the first insulating layer 50 has a patterned fourth via structure 502, and the current spreading layer 40 covers the surface of the first insulating layer 50 near the metal layer. Figure 4 The first insulating layer 50 is schematically covered on its upper surface and sidewalls, and is in contact with the second conductive semiconductor layer 23 through the fourth via structure 502. An interface transition layer 30 covers the upper surface and sidewalls of the current spreading layer 40, and the interface transition layer 30 has a patterned third via structure 302. Thus, the metal layer 60 covering the interface transition layer 30 can contact the current spreading layer 40 through the third via structure 302. The metal layer 60 includes a metal reflective layer 61 and a metal blocking layer 62. The metal blocking layer 62 is located on the metal reflective layer 61, covering the sidewalls and part of the upper surface of the metal reflective layer 61. In this third embodiment, the second insulating layer 70 and the connecting electrode (… Figure 4 The diagram schematically shows a first electrode 81 and a second electrode 82, a third insulating layer 90, and solder pad electrodes. Figure 4 The diagram schematically illustrates the arrangement of the first pad electrode 83 and the second pad electrode 84. For details, please refer to [the relevant documentation / reference]. Figure 2 and Figure 2A As shown, it is basically the same as that in Example 1, and will not be described in detail here.

[0070] In the chip structure described in Embodiment 3, compared to Embodiment 1, the first insulating layer 50 has more portions that directly contact the semiconductor epitaxial stack 20. Furthermore, the refractive index difference between the first insulating layer 50 and the semiconductor epitaxial stack 20 is greater than the refractive index difference between the current spreading layer 40 and the semiconductor epitaxial stack 20, resulting in superior light reflection performance. Moreover, please refer to... Figure 4The first insulating layer 50 and the interface transition layer 30 can also form a staggered complementary structure, which further improves the light extraction efficiency of the chip and makes the omnidirectional reflector formed by the first insulating layer 50, the interface transition layer 30 (which is an insulating metal oxide) as the insulating layer, and the metal layer 60 more superior in terms of refraction.

[0071] Figure 4 This is a schematic cross-sectional view of the light-emitting diode according to Embodiment 4 of the present invention; Figure 5 for Figure 4 A cross-sectional schematic diagram of a modified example of a light-emitting diode in Embodiment 4 is shown.

[0072] Please refer to Figure 4 The light-emitting diode in this embodiment four may include, from top to bottom: a top electrode 85, a semiconductor epitaxial stack 20, a current spreading layer 40, a first insulating layer 50, an interface transition layer 30, a metal layer 60, a bonding layer 100, a conductive substrate 110, and a back electrode 86; wherein, the semiconductor epitaxial stack 20 may include, from top to bottom, a first conductivity type semiconductor layer 21, a light-emitting layer 22, and a second conductivity type semiconductor layer 23; the metal layer 60 may include, from top to bottom, a metal reflective layer 61 and a metal blocking layer 62; the bonding layer 100 is used to bond the semiconductor epitaxial stack 20 to the conductive substrate 110, and may be Au-Au bonding, Au-In bonding, etc.

[0073] Please refer to Figure 5 In some embodiments, the current spreading layer 40 may be alternately arrayed with the first insulating layer 50 on the semiconductor epitaxial stack 20, or the current spreading layer 40 may not be provided, while other structures are basically the same as in Embodiment 4.

[0074] Figure 6 This is a schematic cross-sectional view of the light-emitting diode according to Embodiment 5 of the present invention. Figure 7 for Figure 6 A cross-sectional schematic diagram of a modified example of a light-emitting diode in Embodiment 5 is shown.

[0075] Please refer to Figure 6 The light-emitting diode in this embodiment five may include, from top to bottom: a semiconductor epitaxial stack 20, a current spreading layer 40, a first insulating layer 50, an interface transition layer 30, a metal layer 60, a second insulating layer 70, a conductive connection layer 120, a conductive substrate 110, a first electrode 81, and a second electrode 82.

[0076] Specifically, the semiconductor epitaxial stack 20 may include, from top to bottom, a first conductivity type semiconductor layer 21, a light-emitting layer 22, and a second conductivity type semiconductor layer 23, and has at least one recess 24. Figure 6The diagram schematically shows only one recess 24, which extends from the lower surface of the semiconductor epitaxial stack 20, sequentially through the second conductivity type semiconductor layer 23 and the light-emitting layer 22, to the first conductivity type semiconductor layer 21. A first insulating layer 50 is formed on the surface of the current spreading layer 40 and extends to cover the sidewall of the recess 24. The first insulating layer 50 has a patterned second via structure 501 to expose a portion of the surface of the current spreading layer 40. An interface transition layer 30 covers the surface of the first insulating layer 50 and has... A patterned first through-hole structure 301; a metal layer 60 includes a metal reflective layer 61 and a metal barrier layer 62. The metal reflective layer 61 is located on the interface transition layer 30, covering part of the interface transition layer 30 to improve the adhesion of the metal layer 60, and the metal reflective layer 61 is in contact with the exposed current spreading layer 40 through the first through-hole structure 301 and the second through-hole structure 501; the metal barrier layer 62 is located on the metal reflective layer 61, covering the sidewalls and part of the upper surface of the metal reflective layer 61, while exposing part of the surface for setting the second electrode 82;

[0077] The second insulating layer 70 is disposed on the surface of the metal barrier layer 62 away from the semiconductor epitaxial stack 20, and simultaneously covers the sidewall of the recess 24. In this embodiment, the interface transition layer 30 is an insulating metal oxide. Therefore, the sidewall of the recess 24 is sequentially covered from the inside to the outside with the first insulating layer 50, the interface transition layer 30, and the second insulating layer 50. The conductive connection layer 120 is located on the surface of the second insulating layer 70 and fills the recess 24 to electrically connect to the first conductive type semiconductor layer 21, and also contains the bonding material for bonding the conductive substrate 110. A conductive substrate 110 is disposed on the side surface of the conductive connection layer 120 away from the semiconductor epitaxial stack 20; a first electrode 81 is disposed on the side surface of the conductive substrate 110 away from the semiconductor epitaxial stack 20, thereby forming an electrical connection with the first conductive type semiconductor layer 21 through the conductive substrate 110, the conductive connection layer 120 in sequence; a second electrode 82 is disposed on the surface of the exposed metal barrier layer 62, thereby forming an electrical connection with the second conductive type semiconductor layer 23 through the metal barrier layer 62, the metal reflective layer 61, the current spreading layer 40 in sequence, while the metal barrier layer 62 and the conductive connection layer 120 are electrically isolated by a second insulating layer 70.

[0078] Figure 7 The difference between the modified example shown and Embodiment 5 is that the interface transition layer 30, the current spreading layer 40 and the first insulating layer 50 are configured according to the structure of Embodiment 3, which will not be described in detail here.

[0079] Figure 8 This is a top view schematic diagram of a portion of the structure of the light-emitting diode according to Embodiment Six of the present invention. Figure 9 This is a side view schematic diagram of the light-emitting diode provided in Embodiment Six. Figure 9A What is shown is Figure 9 Enlarged schematic diagram of the structure within the dashed box.

[0080] Please also refer to Figure 8 , Figure 9 , Figure 9A The light-emitting diode of this embodiment six includes at least one semiconductor epitaxial stack 20 disposed on the substrate 10, which is basically the same as that of embodiment one, and will not be described in detail here.

[0081] Please continue to refer to this. Figure 9 and Figure 9A A current spreading layer 40 for spreading current is disposed on the second conductive semiconductor layer 23. The first insulating layer 50 includes a first portion 51 covering the sidewalls and a portion of the upper surface edge of the semiconductor epitaxial stack 20, and a second portion 52 covering a portion of the upper surface of the current spreading layer 40 near the metal layer 60. A first gap d1 exists between the first portion 51 and the second portion 52. The metal layer 60 includes a metal reflective layer 61. The projection of the metal reflective layer 61 and the edge of the current spreading layer 40 in the direction perpendicular to the semiconductor epitaxial stack 20 falls within the first gap d1. In this embodiment, the projection of the current spreading layer 40 in the direction perpendicular to the semiconductor epitaxial stack 20 falls within the range of the metal reflective layer 61, so that the metal reflective layer 61 can... Figure 9AAs shown, the outer portion of the metal reflective layer 61 is in contact with the semiconductor epitaxial stack 20, while the inner portion is in contact with the current spreading layer 40. This improves the poor adhesion and easy detachment of the metal reflective layer 61 when it covers the first insulating layer 50. Compared to using the second portion 52 to cover the current spreading layer 40 so that the metal reflective layer 61 can directly contact the exposed second conductive semiconductor layer 23, the current spreading layer 40 has a larger area, giving the chip better current spreading performance and effectively reducing damage to the light-emitting diode caused by electrostatic discharge (ESD). On the other hand, the chip structure forms an outer ring region outside the first gap d1, which is the first portion 51, to protect the periphery and sidewalls of the upper surface of the semiconductor epitaxial stack 20. The second portion 52 is the inner ring region in the middle of the upper surface of the semiconductor epitaxial stack 20, thus forming a moat effect that effectively protects the boundary of the MESA and improves the reliability of the light-emitting diode. In some embodiments, the spacing of the first gap d1 can be above 4μm and below 20μm. Choosing this spacing range can effectively reduce damage to the light-emitting diode caused by electrostatic discharge (ESD) and improve the photoelectric performance of the light-emitting diode.

[0082] Please continue to refer to this. Figure 9 and Figure 9A The second portion 52 has a patterned fifth via structure 521, through which a portion of the upper surface of the current spreading layer 40 can be exposed; the metal reflective layer 61 is located above the semiconductor epitaxial stack 20, covering a portion of the interface transition layer 30, and at least partially in contact with the current spreading layer 40 through the fifth via structure 521. The edge of the metal reflective layer 61 projected in the direction perpendicular to the semiconductor epitaxial stack 20 has a second gap d2 between the edge of the first portion 51 near the metal reflective layer 61 projected in the direction perpendicular to the semiconductor epitaxial stack 20. The spacing of the second gap d2 can be greater than 0.5 μm and less than 5 μm, or greater than 1 μm and less than 5 μm, or greater than 2 μm and less than 5 μm, or greater than 3 μm and less than 5 μm. When the edge of the metal reflective layer 61 is located at the first portion 51 of the first insulating layer 50, there is a risk that the metal reflective layer 61 will detach. By controlling the two gaps, the metal reflective layer 61 can be effectively prevented from covering the surface of the first portion 51 of the first insulating layer 50. In this embodiment six, the metal barrier layer 62, the second insulating layer 70, and the connecting electrode ( Figure 9The diagram schematically shows a first electrode 81 and a second electrode 82, a third insulating layer 90, and solder pad electrodes. Figure 9 The diagram schematically illustrates the arrangement of the first pad electrode 83 and the second pad electrode 84. For details, please refer to [the relevant documentation / reference]. Figure 9 and Figure 9A As shown, it is basically the same as in Embodiment 1. Of course, the metal barrier layer 62 can be configured as shown in the figure, or its edge can not cover the surface of the first insulating layer 50, but has a similar configuration to the metal reflective layer 61, that is, its edge covers the current spreading layer 40 and / or the semiconductor epitaxial stack 20. This will not be elaborated further here.

[0083] Figure 9B The illustration shows Embodiment Six of the present invention. Figure 9 Example 1: A variation of the structure within the dashed box.

[0084] Please refer to the following at the same time: Figure 9 and Figure 9B In this embodiment, an interface transition layer 30 may be covered on the first insulating layer 50 to improve the adhesion of the metal reflective layer 61.

[0085] Figure 9C The illustration shows Embodiment Six of the present invention. Figure 9 Example 2 of the variation of the structure within the dashed frame.

[0086] Please refer to the following at the same time: Figure 9 and Figure 9C In this embodiment, the current spreading layer 40 may have through holes that expose the surface of the second conductivity type semiconductor layer 23. These through holes are preferably staggered from the fifth through hole structure 521 on the second part 52 of the first insulating layer 50, so as to reduce the light absorption of the current spreading layer 40 and thereby improve the light extraction efficiency of the light-emitting diode.

[0087] Figure 10 This is a side view of the light-emitting diode according to Embodiment 7 of the present invention. Figure 10A What is shown is Figure 10 Enlarged schematic diagram of the structure within the dashed box.

[0088] Please also refer to Figure 10 and Figure 10A The difference between Embodiment Seven and Embodiment Six is ​​that the projection of the metal reflective layer 61 in the direction perpendicular to the semiconductor epitaxial stack 20 falls within the range of the current spreading layer 40, so that the metal reflective layer 61 can be as... Figure 10AAs shown, the portion located at its edge can contact the current spreading layer 40, thereby improving the problem of poor adhesion and easy detachment of the edge of the metal reflective layer 61 when it covers the first insulating layer 50. Compared with Embodiment Six, since it has a larger area of ​​current spreading layer 40, it has a better effect in effectively reducing electrostatic discharge (ESD). However, the light absorption problem of current spreading layer 40 leads to a relative decrease in its light extraction efficiency.

[0089] Figure 10B The illustration shows Embodiment Seven of the present invention. Figure 10 Example 1: A variation of the structure within the dashed box.

[0090] Please refer to the following at the same time: Figure 10 and Figure 10B In this embodiment, an interface transition layer 30 may be covered on the first insulating layer 50 to improve the adhesion of the metal reflective layer 61.

[0091] Figure 11 This is a schematic cross-sectional view of the light-emitting diode according to Embodiment 8 of the present invention.

[0092] Please refer to Figure 11 The light-emitting diode of this embodiment eight, from top to bottom, may include: a top electrode 85, a semiconductor epitaxial stack 20, a current spreading layer 40, a first insulating layer 50, a metal layer 60, a bonding layer 100, a conductive substrate 110, and a back electrode 86; its structure is basically the same as that of embodiment four, the difference being that: the metal layer 60 is a metal reflective layer 61, which is covered with a metal blocking layer 62, and its first insulating layer 50 includes a first portion 51 covering the edge of a portion of the upper surface of the semiconductor epitaxial stack 20, and a second portion 52 covering the upper surface of the current spreading layer 40 near the metal layer 60, and the first insulating layer 50... A first gap d1 exists between portion 51 and the second portion 52, and the projection of the edges of the metal layer 60 and the current spreading layer 40 in the direction perpendicular to the semiconductor epitaxial stack 20 falls within the first gap d1. In this embodiment, the projection of the current spreading layer 40 in the direction perpendicular to the semiconductor epitaxial stack 20 falls within the range of the metal reflective layer 61. In the chip structure of this embodiment, the edge portion of the metal reflective layer 61 can have better adhesion by directly contacting the semiconductor epitaxial stack 20 compared to direct contact with the current spreading layer 40.

[0093] Figure 12 This is a schematic cross-sectional view of the light-emitting diode according to Embodiment 9 of the present invention.

[0094] Please also refer to Figure 11 and Figure 12The difference between Embodiment Nine and Embodiment Eight is that the projection of the metal reflective layer 61 in the direction perpendicular to the semiconductor epitaxial stack 20 falls within the range of the current spreading layer 40. In the chip structure of this embodiment, the edge portion of the metal reflective layer 61 can have better adhesion to the current spreading layer 40 than direct contact with the first insulating layer 50. Furthermore, in this structure, the coverage area of ​​the current spreading layer 40 is larger, resulting in a better current spreading effect.

[0095] Figure 13 This is a schematic cross-sectional view of the light-emitting diode according to Embodiment 10 of the present invention.

[0096] Please refer to Figure 13 The light-emitting diode of this embodiment 10 comprises, from top to bottom, a semiconductor epitaxial stack 20, a current spreading layer 40, a first insulating layer 50, a metal reflective layer 61, a second insulating layer 70, a conductive connection layer 120, a conductive substrate 110, a first electrode 81, and a second electrode 82. Its structure is basically the same as that of embodiment 5, except that the first insulating layer 50 includes a first portion 51 covering the sidewalls and part of the upper surface edge of the semiconductor epitaxial stack 20, and a second portion 52 covering part of the upper surface of the current spreading layer 40 near the metal layer 60. A first gap d1 exists between the first portion 51 and the second portion 52. The projection of the metal reflective layer 61 and the edge of the current spreading layer 40 in the direction perpendicular to the semiconductor epitaxial stack 20 falls within the first gap d1. In this embodiment, the projection of the current spreading layer 40 in the direction perpendicular to the semiconductor epitaxial stack 20 falls within the range of the metal reflective layer 61. Optionally, an interface transition layer is provided. The configuration of the remaining structures can be referred to... Figure 13 The structure of the light-emitting diode in Embodiment 5 is adapted to the existing structure, which will not be described in detail here.

[0097] Figure 14 This is a schematic cross-sectional view of the light-emitting diode according to Embodiment Eleven of the present invention.

[0098] Please also refer to Figure 13 and Figure 14 The difference between Embodiment 11 and Embodiment 10 is that the projection of the metal reflective layer 61 in the direction perpendicular to the semiconductor epitaxial stack 20 falls within the range of the current spreading layer 40.

[0099] It should be noted that the various implementation methods listed in the above embodiments and variations can be obviously combined to form new technical solutions, which will not be elaborated further here.

[0100] In summary, compared with the prior art, the light-emitting diode provided by the present invention has higher reliability and structural stability.

[0101] The light-emitting diode of this invention can be used in light-emitting devices or display devices. The light-emitting device can be used in, but is not limited to, COB (Chip on Board) lighting, UV ultraviolet light, bulb lamps, or flexible filament lamps. The display device can be a backlit display or an RGB direct display device.

[0102] The light-emitting diode of the present invention can be a flip-chip light-emitting diode. The pad electrodes can be connected to other application circuit boards using solder paste material through reflow soldering and high-temperature processing, and made into a display device, such as a backlight display or an RGB display screen.

[0103] According to one aspect of this application, a light-emitting device is provided, such as automotive lighting, plant lighting, etc. The light-emitting device includes a bracket and the flip-chip light-emitting diode of this application fixed on the bracket. The bracket may include, but is not limited to, a COB bracket or a COG bracket, or an SMD bracket, etc.

[0104] As an example, please refer to Figure 15 The light-emitting device includes a bracket 130, an encapsulation layer 140, and a flip-chip light-emitting diode 200. In this embodiment, the flip-chip light-emitting diode 200 can be the light-emitting diode in the aforementioned embodiment.

[0105] Preferably, the bracket 130 may be planar, or a reflective cup may be provided around the area on the bracket 130 for mounting the flip-chip LED 200, the reflective cup defining a space for accommodating the flip-chip LED 200.

[0106] Please refer to Figure 15 The bracket 130 includes a bottom 131 and a sidewall 132. The sidewall 132 forms a reflective cup structure around the area where the flip-chip LED 200 is mounted. The upper surface of the bottom 131 is provided with a mounting area 131A, a first bonding area 131B, and a second bonding area 131C. The first bonding area 131B and the second bonding area 131C are electrically isolated from each other. The flip-chip LED 200 is mounted on the mounting area 131A and connected to the first bonding area 131B and the second bonding area 131C through the first pad electrode 83 and the second pad electrode 84, respectively. The encapsulation layer 140 seals the flip-chip LED 200 on the bracket 130.

[0107] For example, the surfaces of the first pad electrode 83 and the second pad electrode 84 of the flip-chip 200 may be plated with a solderable metal layer, such as conductive solder paste, and the upper surfaces of the first bonding area 131B and the second bonding area 131C may also be provided with metal electrodes, so that the flip chip can be soldered to the corresponding bonding area by eutectic bonding or solder paste.

[0108] Preferably, the flip-chip LED 200 is used in backlight display or RGB display. Small-sized flip-chip LEDs 200 are integrated and mounted on the application substrate or packaging substrate in quantities of hundreds, thousands or tens of thousands to form the light source part of the backlight display device or RGB display device.

[0109] Although this document frequently uses terms such as substrate, semiconductor epitaxial stack, first conductivity type semiconductor layer, light-emitting layer, second conductivity type semiconductor layer, current spreading layer, metal layer, bonding layer, and conductive substrate, the possibility of using other terms is not excluded. These terms are used merely for the convenience of describing and explaining the essence of the invention; interpreting them as any additional limitation would contradict the spirit of the invention. The terms "first," "second," etc. (if present) in the specification, claims, and accompanying drawings of the embodiments of the invention are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence.

[0110] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A light-emitting diode, comprising a semiconductor epitaxial stack and a metal layer disposed on the semiconductor stack, wherein the semiconductor epitaxial stack includes a first conductivity type semiconductor layer, a light-emitting layer, and a second conductivity type semiconductor layer sequentially stacked; characterized in that: An interface transition layer, a first insulating layer, and a current spreading layer are disposed between the semiconductor epitaxial stack and the metal layer. The interface transition layer includes an insulating metal oxide or a stack of insulating metal oxides. At least a portion of the current spreading layer is in contact with the semiconductor epitaxial stack, and at least a portion of the metal layer is in contact with the current spreading layer. The first insulating layer includes a first portion that covers at least the sidewalls of the semiconductor epitaxial stack and a second portion that covers at least a portion of the surface of the current spreading layer, with a first gap between the first portion and the second portion; The projection of the edge of the metal layer in the direction perpendicular to the semiconductor epitaxial stack falls within the first gap; the projection of the edge of the current spreading layer in the direction perpendicular to the semiconductor epitaxial stack falls within the first gap.

2. The light-emitting diode according to claim 1, characterized in that, The thickness of the interface transition layer is above 3nm and below 400nm.

3. The light-emitting diode according to claim 1, characterized in that: The refractive index of the interface transition layer is above 1.5 and below 3.

5.

4. The light-emitting diode according to claim 1, characterized in that: The insulating metal oxide includes at least one of TiO2, ZrO2, HfO2, Ta2O5, Al2O3, Nb2O5, Y2O3, MgO, La2O3, SrTiO3, BaTiO3, or CeO2.

5. The light-emitting diode according to claim 1, characterized in that: The first insulating layer at least covers a portion of the surface of the current spreading layer near the metal layer, the interface transition layer has a patterned first via structure, and the first insulating layer has a patterned second via structure. At least a portion of the metal layer is in contact with the current spreading layer through the first through-hole structure and the second through-hole structure in sequence.

6. The light-emitting diode according to claim 5, characterized in that: The diameter of the first through-hole structure is greater than 3 μm and less than 20 μm; the diameter of the second through-hole structure is greater than 3 μm and less than 20 μm, and the spacing between adjacent first through-hole structures is greater than 10 μm and less than 50 μm; the spacing between adjacent second through-hole structures is greater than 10 μm and less than 50 μm.

7. The light-emitting diode according to claim 1, characterized in that: The interface transition layer has a patterned third via structure, and the metal layer contacts the current spreading layer through the third via structure; The first insulating layer has a patterned fourth via structure, and the current spreading layer at least covers a portion of the surface of the first insulating layer near the metal layer. The current spreading layer is in contact with the semiconductor epitaxial stack through the fourth via structure.

8. The light-emitting diode according to claim 1, characterized in that: The spacing of the first gap is greater than 4 μm and less than 20 μm.

9. The light-emitting diode according to claim 1, characterized in that: The second portion has a patterned fifth via structure, through which a portion of the metal layer contacts the current spreading layer.

10. The light-emitting diode according to claim 1, characterized in that: There is a second gap between the edge of the metal layer projected in the direction perpendicular to the semiconductor epitaxial stack and the edge of the first portion near one side of the metal layer projected in the direction perpendicular to the semiconductor epitaxial stack.

11. The light-emitting diode according to claim 10, characterized in that: The spacing of the second gap is greater than 0.5 μm and less than 5 μm.

12. The light-emitting diode according to any one of claims 1 to 11, characterized in that: The projection of the metal layer in the direction perpendicular to the semiconductor epitaxial stack falls within the range of the current spreading layer.

13. The light-emitting diode according to any one of claims 1 to 11, characterized in that: The projection of the current spreading layer in the direction perpendicular to the semiconductor epitaxial stack falls within the range of the metal layer.

14. The light-emitting diode according to claim 1, characterized in that: It also includes a second insulating layer, a first electrode, and a second electrode. The second insulating layer covers a portion of the upper surface and sidewalls of the metal layer and has a through-hole structure. The first electrode is located on the second insulating layer and is electrically connected to the first conductive type semiconductor layer through some of the sixth through-hole structures. The second electrode is located on the second insulating layer and is in contact with the metal layer through other sixth through-hole structures to be electrically connected to the second conductive type semiconductor layer.

15. The light-emitting diode according to claim 14, characterized in that: It also includes a first pad electrode, a second pad electrode, and a third insulating layer, wherein the third insulating layer is located above the second insulating layer, and the first pad electrode and the second pad electrode are arranged on the third insulating layer; the third insulating layer has patterned seventh via structures, the first pad electrode contacts the first electrode through some of the seventh via structures located on the third insulating layer, and the second pad electrode contacts the second electrode through other of the seventh via structures located on the third insulating layer.

16. The light-emitting diode according to claim 1, characterized in that: The first insulating layer has a fifth via structure, and the current spreading layer has a series of vias exposing the surface of the second conductivity type semiconductor layer. These vias are staggered from the fifth via structure of the first insulating layer.

17. A light-emitting device comprising a light-emitting diode according to any one of claims 1 to 16.

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