Electroluminescent device, display panel and display device

Abstract

The embodiments of the present application provide an electroluminescent device, a display panel, and a display apparatus. The electroluminescent device comprises: at least two stacked light-emitting layers; a charge generation layer, located between two adjacent light-emitting layers, comprising a stacked hole generation layer and an electron generation layer; wherein the host-guest doping ratio of the hole generation layer is a first doping ratio, the host-guest doping ratio of the electron generation layer is a second doping ratio, and the ratio between the first doping ratio and the second doping ratio is not less than 3:1 and not greater than 20:1. The embodiments of the present application optimize the doping ratio of the charge generation layer in the stacked electroluminescent device, specifically controlling the host-guest doping ratio of the hole generation layer to be greater than the host-guest doping ratio of the electron generation layer, which is conducive to better matching the driving voltage of each pixel in the light-emitting layer and reducing pixel crosstalk.

Description

Technical Field

[0001] The present application relates to the field of display technology, and more specifically, to an electroluminescent device, a display panel, and a display apparatus. Background Art

[0002] Organic light-emitting diodes, or OLEDs, are considered to be the ideal next-generation display technology to replace liquid crystal technology due to their inherent advantages, such as self-luminescence, high brightness, fast response, wide color gamut, and the ability to produce flexible display devices.

[0003] Due to the limitations of the characteristics of existing luminescent materials, existing single-layer electroluminescent devices cannot meet customer demands. In order to meet customers' increasingly stringent demands for reliability, lifespan, power consumption, etc., stacked electroluminescent devices came into being.

[0004] However, stacked electroluminescent devices are prone to pixel crosstalk, which affects the display effect. Summary of the Invention

[0005] In view of the shortcomings of the existing methods, the present application proposes an electroluminescent device, a display panel and a display device to solve the technical problem that the stacked electroluminescent devices in the prior art are prone to pixel crosstalk.

[0006] In a first aspect, embodiments of the present application provide an electroluminescent device comprising: at least two stacked light-emitting layers;

[0007] The charge generation layer is located between two adjacent light-emitting layers and includes a stacked hole generation layer and an electron generation layer;

[0008] Among them, the host-guest doping ratio of the hole generation layer is a first doping ratio, the host-guest doping ratio of the electron generation layer is a second doping ratio, and the ratio between the first doping ratio and the second doping ratio is not less than 3:1 and not greater than 20:1.

[0009] Optionally, the host material of the hole generating layer includes at least one of the following compounds:

[0010]

[0011] Optionally, the guest material of the hole generating layer includes at least one of the following compounds:

[0012] Optionally, the host material of the electron generating layer includes at least one of the following compounds:

[0013]

[0014]

[0015] Optionally, the light emitting layer includes: a first sub-pixel and a second sub-pixel;

[0016] The hole generating layer includes: a first hole generating substructure corresponding to the first subpixel, and a second hole generating substructure corresponding to the second subpixel;

[0017] The driving voltage of the first sub-pixel is higher than the driving voltage of the second sub-pixel, and the conductivity of the first hole generating substructure is higher than the conductivity of the second hole generating substructure.

[0018] Optionally, the host-guest doping ratio of the first hole-generating substructure is greater than the host-guest doping ratio of the second hole-generating substructure;

[0019] And / or, there is a first gap between the first hole-generating substructure and the second hole-generating substructure.

[0020] Optionally, the first interval is not less than 2 microns.

[0021] Optionally, the light emitting layer includes: a first sub-pixel and a second sub-pixel;

[0022] The electron generation layer includes: a first electron generation substructure corresponding to the first subpixel, and a second electron generation substructure corresponding to the second subpixel;

[0023] The driving voltage of the first sub-pixel is higher than the driving voltage of the second sub-pixel, and the conductivity of the first electron generating substructure is higher than the conductivity of the second electron generating substructure.

[0024] Optionally, the host-guest doping ratio of the first electron-generating substructure is greater than the host-guest doping ratio of the second electron-generating substructure;

[0025] And / or, a second interval is provided between the first electron-generating substructure and the second electron-generating substructure.

[0026] Optionally, the second interval is not less than 2 microns.

[0027] Optionally, the light-emitting layer includes: a first sub-pixel, a second sub-pixel and a third sub-pixel;

[0028] The driving voltage of the first sub-pixel is higher than the driving voltage of the second sub-pixel and the driving voltage of the third sub-pixel;

[0029] There is a third interval between the first sub-pixel and the second sub-pixel, and there is a fourth interval between the first sub-pixel and the third sub-pixel.

[0030] Optionally, at least one of the third interval and the fourth interval is not less than 2 micrometers.

[0031] In a second aspect, an embodiment of the present application provides a display panel, comprising: an electroluminescent device as provided in the first aspect above.

[0032] In a third aspect, an embodiment of the present application provides a display device, comprising: a display panel as provided in the second aspect above.

[0033] The beneficial technical effects brought about by the technical solution provided in the embodiments of the present application include: by optimizing the doping ratio of the charge generation layer in the stacked electroluminescent device, specifically controlling the host-guest doping ratio of the hole generation layer to be greater than the host-guest doping ratio of the electron generation layer, and controlling the ratio between the two host-guest doping ratios to be no less than 3:1 and no more than 20:1, it is beneficial to better match the driving voltage of each pixel in the light-emitting layer and reduce pixel crosstalk.

[0034] Additional aspects and advantages of the present application will be given in part in the following description, which will become apparent from the following description, or will be learned through practice of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] The above and / or additional aspects and advantages of the present application will become apparent and easily understood from the following description of the embodiments in conjunction with the accompanying drawings, in which:

[0036] Figure 1 A schematic cross-sectional view of a first embodiment of an electroluminescent device provided in an embodiment of the present application;

[0037] Figure 2 A schematic cross-sectional view of a second embodiment of an electroluminescent device provided in an embodiment of the present application;

[0038] Figure 3 A schematic cross-sectional view of a third embodiment of an electroluminescent device provided in an embodiment of the present application;

[0039] Figure 4 A schematic cross-sectional view of a fourth embodiment of an electroluminescent device provided in an embodiment of the present application;

[0040] Figure 5 A schematic cross-sectional view of a fifth embodiment of an electroluminescent device provided in an embodiment of the present application;

[0041] Figure 6 This is a schematic top view of the structure of a fifth embodiment of an electroluminescent device provided in an embodiment of the present application.

[0042] In the picture:

[0043] 100-electroluminescent device;

[0044] 110 - light-emitting layer; 111 - first sub-pixel; 112 - second sub-pixel; 113 - third sub-pixel;

[0045] 120 - charge generation layer; 121 - hole generation layer; 121a - first hole generation substructure; 121b - second hole generation substructure; 122 - electron generation layer; 122a - first electron generation substructure; 122b - second electron generation substructure;

[0046] 130-anode layer; 140-cathode layer; 150-hole transport layer; 160-electron transport layer;

[0047] 10-first interval; 20-third interval; 30-fourth interval. DETAILED DESCRIPTION

[0048] The following describes the embodiments of the present application in conjunction with the accompanying drawings. It should be understood that the embodiments described below in conjunction with the accompanying drawings are exemplary descriptions for explaining the technical solutions of the embodiments of the present application and do not constitute a limitation on the technical solutions of the embodiments of the present application.

[0049] Those skilled in the art will understand that, unless otherwise stated, the singular forms "a", "an", "said" and "the" used herein may also include plural forms. It should be further understood that the term "comprising" used in the specification of this application refers to the presence of the described features, integers, elements and / or components, but does not exclude the implementation of other features, information, data, elements, components and / or combinations thereof supported by this technical field. It should be understood that when we say that an element is "connected" or "coupled" to another element, the element can be directly connected or coupled to the other element, or it can refer to the establishment of a connection relationship between the element and the other element through an intermediate element. In addition, the "connection" or "coupling" used here may include wireless connection or wireless coupling. The term "and / or" used here refers to at least one of the items defined by the term, for example, "A and / or B" can be implemented as "A", or as "B", or as "A and B".

[0050] In order to make the objectives, technical solutions and advantages of this application clearer, the implementation methods of this application will be further described in detail below with reference to the accompanying drawings.

[0051] The research and development ideas of this application include: in a stacked electroluminescent device, two adjacent light-emitting layers can be connected through a charge generation layer, that is, single-layer devices can be connected through the charge generation layer to obtain a stacked electroluminescent device.

[0052] The charge generation layer (CGL) can be divided into a hole generation layer (PCGL) and an electron generation layer (NCGL). The doping concentration of these layers significantly influences the product's performance. Experiments have shown that optimizing the CGL's doping concentration can effectively address issues such as high device voltage and poor product lifespan. However, material energy level matching and the CGL's influence on different color light-emitting devices vary. This can lead to a significant increase in crosstalk between pixels while reducing voltage during device optimization.

[0053] Specifically, the driving voltage of the blue sub-pixel, which emits blue light in the three primary colors of red, green, and blue, is relatively high, resulting in an imbalanced color balance in the stacked device, abnormal display quality, insufficient driving voltage for the PMIC (Power Management Integrated Circuit), and insufficient product voltage reserve. Furthermore, the charge generation layers (PCGL and NCGL) in stacked devices are typically made of the same material and shared by the three RGB sub-pixels. The guests in the hole generation layer can be disordered organic small molecules, while the guests in the electron generation layer can be metallically active metals, such as Group I, II, and lanthanide metals. To maximize the voltage yield of stacked OLED displays, the guest concentration in the hole generation layer or electron generation layer can be increased. However, the guest material in the hole generation layer and the electronic material in the electron generation layer are disordered under the influence of the electric field. Therefore, the activation of high-voltage pixels can cause the activation of low-voltage pixels, resulting in crosstalk between pixels.

[0054] Therefore, when optimizing the device structure of the charge generation layer, the voltage and electroluminescent efficiency of the three colors RGB will change at different rates, making the power consumption benefit and crosstalk effect of such a solution less than ideal.

[0055] The electroluminescent device, display panel and display apparatus provided in this application are intended to solve the above technical problems in the prior art.

[0056] The following is a detailed description of the technical solution of the present application and how the technical solution of the present application solves the above-mentioned technical problems with specific embodiments. It should be noted that the following embodiments can refer to, draw on, or combine with each other, and the same terms, similar features, and similar implementation steps in different embodiments will not be repeated.

[0057] The embodiment of the present application provides an electroluminescent device 100, the structural diagram of the electroluminescent device 100 is as shown in FIG. Figure 1 As shown, the present invention comprises: at least two stacked light-emitting layers 110 , and a charge generation layer 120 located between the two adjacent light-emitting layers 110 .

[0058] The charge generation layer 120 includes a hole generation layer 121 and an electron generation layer 122 which are stacked.

[0059] The host-guest doping ratio of the hole generation layer 121 is a first doping ratio, the host-guest doping ratio of the electron generation layer 122 is a second doping ratio, and the ratio between the first doping ratio and the second doping ratio is not less than 3:1 and not greater than 20:1.

[0060] In this embodiment, the doping concentration of the P-type charge generation layer 120 (PCGL) and the doping concentration of the N-type charge generation layer 120 (NCGL) in the stacked electroluminescent device 100 are differentiated. Specifically, the host-guest doping ratio of the hole generation layer 121 is controlled to be greater than the host-guest doping ratio of the electron generation layer 122, and the ratio between the two host-guest doping ratios (i.e., the first doping ratio and the second doping ratio) is controlled to be not less than 3:1 and not greater than 20:1, which is conducive to better matching the driving voltage of each pixel in the light-emitting layer 110 and reducing pixel crosstalk.

[0061] The host-guest doping ratio refers to the content ratio of the host material to the guest material.

[0062] In some possible embodiments, the electroluminescent device 100 further includes a stacked anode layer 130 and a cathode layer 140, a hole transport layer 150 located on the side of the anode layer 130 closer to the cathode layer 140, and an electron transport layer 160 located on the side of the cathode layer 140 closer to the anode layer 130. All light-emitting layers 110 are sequentially stacked between the hole transport layer 150 and the electron transport layer 160. Specifically, the hole generation layer 121 in each charge generation layer 120 is closer to the cathode layer 140 than the electron generation layer 122. Similarly, the electron generation layer 122 in each charge generation layer 120 is closer to the anode layer 130 than the hole generation layer 121.

[0063] In some possible embodiments, the host material of the hole generating layer 121 includes at least one of the following compounds:

[0064]

[0065] In some possible embodiments, the guest material of the hole generating layer 121 includes at least one of the following compounds:

[0066]

[0067] In some possible embodiments, the host material of the electron generation layer 122 includes at least one of the following compounds:

[0068]

[0069]

[0070] The research and development ideas of this application also include: the charge generation layer 120 can be configured differently for sub-pixels with different driving voltage requirements in the light-emitting layer 110, which is conducive to matching the energy levels of each sub-pixel in the light-emitting layer 110. To this end, this application provides the following two possible implementation methods for the electroluminescent device 100:

[0071] In a first possible implementation, Figure 2 As shown, the light emitting layer 110 includes a first sub-pixel 111 and a second sub-pixel 112 .

[0072] The hole generating layer 121 includes a first hole generating substructure 121 a corresponding to the first subpixel 111 , and a second hole generating substructure 121 b corresponding to the second subpixel 112 .

[0073] The driving voltage of the first sub-pixel 111 is higher than the driving voltage of the second sub-pixel 112 , and the conductivity of the first hole generating substructure 121 a is higher than the conductivity of the second hole generating substructure 121 b .

[0074] In this embodiment, the first sub-pixel 111 is a high-drive voltage pixel, while the second sub-pixel 112 is a low-drive voltage pixel. The electroluminescent device 100 provided in this embodiment provides for better matching of the energy levels of the sub-pixels of the light-emitting layer 110 with different drive voltages by differentially configuring the hole generation layer 121 (i.e., the P-type charge generation layer 120) corresponding to the first sub-pixel 111 and the second sub-pixel 112, respectively, in the charge generation layer 120. Specifically, the first hole generation substructure 121a with higher conductivity corresponds to the high-drive voltage pixel, while the second hole generation substructure 121b with relatively lower conductivity corresponds to the low-drive voltage pixel. This optimizes product characteristics and power efficiency.

[0075] In one example, the first sub-pixel 111 is a blue sub-pixel, and the second sub-pixel 112 is a red sub-pixel or a green sub-pixel.

[0076] Based on the first possible implementation method mentioned above, in order to achieve higher conductivity of the first hole generating substructure 121a than that of the second hole generating substructure 121b, it can be specifically adopted that: the host-guest doping ratio of the first hole generating substructure 121a is greater than the host-guest doping ratio of the second hole generating substructure 121b.

[0077] In this embodiment, the conductive properties of the first hole generating substructure 121a and the second hole generating substructure 121b are differentiated by controlling the host-guest doping ratio in the first hole generating substructure 121a and the second hole generating substructure 121b.

[0078] Based on the first possible implementation method above, Figure 4 As shown, a first gap 10 is defined between the first hole-generating substructure 121 a and the second hole-generating substructure 121 b .

[0079] In this embodiment, the first spacer 10 is conducive to disconnecting the first hole generating substructure 121a from the second hole generating substructure 121b, which can effectively reduce the probability of crosstalk caused by overlapping hole materials.

[0080] In some examples, the first gap 10 is not less than 2 micrometers to ensure sufficient insulation.

[0081] In some examples, the first gap 10 between the first hole generating substructure 121a and the second hole generating substructure 121b can be formed by reducing the opening size of the mask plate used to prepare the first hole generating substructure 121a or the second hole generating substructure 121b; or it can be formed by etching after the first hole generating substructure 121a and the second hole generating substructure 121b are prepared.

[0082] It should be noted that the light-emitting layer 110 can also include a third sub-pixel 113, and the driving voltage of the third sub-pixel 113 is also lower than the driving voltage of the first sub-pixel 111. The second hole generating substructure 121b can correspond to the second sub-pixel 112 and the third sub-pixel 113 at the same time, that is, the second sub-pixel 112 and the third sub-pixel 113 share the second hole generating substructure 121b.

[0083] In a second possible implementation, Figure 3 As shown, the light emitting layer 110 includes a first sub-pixel 111 and a second sub-pixel 112 .

[0084] The electron generation layer 122 includes a first electron generation substructure 122 a corresponding to the first subpixel 111 , and a second electron generation substructure 122 b corresponding to the second subpixel 112 .

[0085] The driving voltage of the first sub-pixel 111 is higher than the driving voltage of the second sub-pixel 112 , and the conductivity of the first electron generating substructure 122 a is higher than the conductivity of the second electron generating substructure 122 b .

[0086] In this embodiment, the first sub-pixel 111 is a high-drive voltage pixel, while the second sub-pixel 112 is a low-drive voltage pixel. The electroluminescent device 100 provided in this embodiment provides for better matching of the energy levels of the sub-pixels of the light-emitting layer 110 with different drive voltages by differentially configuring the electron generation layer 122 (i.e., the N-type charge generation layer 120) corresponding to the first sub-pixel 111 and the second sub-pixel 112, respectively. Specifically, the first electron generation substructure 122a with higher conductivity corresponds to the high-drive voltage pixel, while the second electron generation substructure 122b with relatively lower conductivity corresponds to the low-drive voltage pixel. This optimizes product characteristics and power efficiency.

[0087] In one example, the first sub-pixel 111 is a blue sub-pixel, and the second sub-pixel 112 is a red sub-pixel or a green sub-pixel.

[0088] Based on the second possible implementation manner described above, the host-guest doping ratio of the first electron-generating substructure 122 a is greater than the host-guest doping ratio of the second electron-generating substructure 122 b .

[0089] In this embodiment, the conductive properties of the first electron generating substructure 122a and the second electron generating substructure 122b are differentiated by controlling the host-guest doping ratio in the first electron generating substructure 122a and the second electron generating substructure 122b.

[0090] Based on the second possible implementation method mentioned above, Figure 4 As shown, there is a second gap (not shown in the figure, see the first gap 10 ) between the first electron-generating substructure 122 a and the second electron-generating substructure 122 b .

[0091] In this embodiment, the second gap facilitates the disconnection between the first electron generating substructure 122a and the second electron generating substructure 122b, and can also effectively reduce the probability of crosstalk caused by overlapping electronic materials.

[0092] In some examples, the second interval is no less than 2 micrometers to ensure sufficient insulation.

[0093] In some examples, the second gap between the first electron generating substructure 122a and the second electron generating substructure 122b can be formed by reducing the opening size of the mask plate used to prepare the first electron generating substructure 122a or the second electron generating substructure 122b; or it can be formed by etching after the first electron generating substructure 122a and the second electron generating substructure 122b are prepared.

[0094] It should be noted that the light-emitting layer 110 can also include a third sub-pixel 113, and the driving voltage of the third sub-pixel 113 is also lower than the driving voltage of the first sub-pixel 111. The second electron generating substructure 122b can correspond to the second sub-pixel 112 and the third sub-pixel 113 at the same time, that is, the second sub-pixel 112 and the third sub-pixel 113 share the second electron generating substructure 122b.

[0095] Based on at least one of the first and second possible implementations, the light-emitting layer 110 includes a first sub-pixel 111 , a second sub-pixel 112 , and a third sub-pixel 113 .

[0096] The driving voltage of the first sub-pixel 111 is higher than the driving voltage of the second sub-pixel 112 and the driving voltage of the third sub-pixel 113 .

[0097] like Figure 5 and Figure 6 As shown, there is a third interval 20 between the first sub-pixel 111 and the second sub-pixel 112 , and there is a fourth interval 30 between the first sub-pixel 111 and the third sub-pixel 113 .

[0098] In this embodiment, the first sub-pixel 111, the second sub-pixel 112 and the third sub-pixel 113 can be a blue sub-pixel, a green sub-pixel and a red sub-pixel respectively. The configuration of three basic colors is conducive to the light-emitting layer 110 to achieve a full-color light-emitting effect.

[0099] Relatively speaking, the first sub-pixel 111 , the second sub-pixel 112 , and the third sub-pixel 113 are: the first sub-pixel 111 is a high driving voltage pixel; the second sub-pixel 112 and the third sub-pixel 113 are both low driving voltage pixels.

[0100] The electroluminescent device 100 provided in this embodiment facilitates the disconnection between the first sub-pixel 111 and the second sub-pixel 112 through the second interval, and facilitates the disconnection between the first sub-pixel 111 and the third sub-pixel 113 through the third interval 20, thereby effectively reducing the probability of crosstalk caused by overlapping sub-pixel materials.

[0101] In some examples, third spacing 20 is no less than 2 microns.

[0102] In some examples, fourth spacing 30 is no less than 2 microns.

[0103] In some examples, third interval 20 and fourth interval 30 are both no less than 2 micrometers.

[0104] Based on the same inventive concept, an embodiment of the present application provides a display panel, which includes: any one of the electroluminescent devices 100 provided in the above embodiments.

[0105] In this embodiment, since the display panel includes any one of the electroluminescent devices 100 provided in the aforementioned embodiments, its implementation principles and beneficial effects are similar and will not be described in detail here.

[0106] In some examples, the display panel may be a flexible panel, a curved panel, or the like.

[0107] Based on the same inventive concept, an embodiment of the present application provides a display device, which includes: any one of the display panels provided in the above embodiments.

[0108] In this embodiment, since the display device includes any one of the display panels provided in the aforementioned embodiments, its implementation principles and beneficial effects are similar and will not be described in detail here.

[0109] In some examples, the display device may include a mobile phone, a tablet computer, a mobile terminal, an e-book, an electronic photo frame, and the like.

[0110] By applying the embodiments of the present application, at least the following beneficial effects can be achieved:

[0111] 1. In the stacked electroluminescent device 100, the doping concentration of the P-type charge generation layer 120 (PCGL) and the doping concentration of the N-type charge generation layer 120 (NCGL) are differentiated. Specifically, the host-guest doping ratio of the hole generation layer 121 is controlled to be greater than the host-guest doping ratio of the electron generation layer 122, and the ratio between the two host-guest doping ratios (i.e., the first doping ratio and the second doping ratio) is controlled to be no less than 3:1 and no more than 20:1. This is conducive to better matching the driving voltage of each pixel in the light-emitting layer 110 and reducing pixel crosstalk.

[0112] 2. By differentially setting the hole generation layer 121 (i.e., the P-type charge generation layer 120) corresponding to the first sub-pixel 111 and the second sub-pixel 112 in the charge generation layer 120, specifically, the first hole generation substructure 121a with higher conductivity corresponds to the high driving voltage pixel, and the second hole generation substructure 121b with relatively low conductivity corresponds to the low driving voltage pixel, so as to better match the energy levels of the sub-pixels of different driving voltages in the light-emitting layer 110, and optimize product characteristics and power consumption benefits.

[0113] 3. By controlling the host-guest doping ratio in the first hole generating substructure 121a and the second hole generating substructure 121b, the conductive properties of the first hole generating substructure 121a and the second hole generating substructure 121b are differentiated.

[0114] 4. The first spacer 10 is conducive to disconnecting the first hole generating substructure 121a from the second hole generating substructure 121b, which can effectively reduce the probability of crosstalk caused by overlapping hole materials.

[0115] 5. By differentially setting the electron generation layer 122 (i.e., the N-type charge generation layer 120) corresponding to the first sub-pixel 111 and the second sub-pixel 112 in the charge generation layer 120, specifically, the first electron generation substructure 122a with higher conductivity corresponds to the high driving voltage pixel, and the second electron generation substructure 122b with relatively low conductivity corresponds to the low driving voltage pixel, so as to better match the energy levels of the sub-pixels of different driving voltages in the light-emitting layer 110, and optimize product characteristics and power consumption benefits.

[0116] 6. By controlling the host-guest doping ratio in the first electron generation substructure 122a and the second electron generation substructure 122b, the conductive properties of the first electron generation substructure 122a and the second electron generation substructure 122b are differentiated.

[0117] 7. The second gap is conducive to disconnecting the first electron generating substructure 122a from the second electron generating substructure 122b, and can also effectively reduce the probability of crosstalk caused by overlapping electronic materials.

[0118] 8. The second interval facilitates disconnection between the first sub-pixel 111 and the second sub-pixel 112, and the third interval 20 facilitates disconnection between the first sub-pixel 111 and the third sub-pixel 113, which can effectively reduce the probability of crosstalk caused by overlapping sub-pixel materials.

[0119] Those skilled in the art will understand that in the description of this application, the directions or positional relationships indicated by words such as "center", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", and "outside" are based on the exemplary directions or positional relationships shown in the accompanying drawings. They are intended to facilitate or simplify the description of the embodiments of this application, and do not indicate or imply that the device or component referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, they should not be understood as limitations on this application.

[0120] The terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of the technical features being referred to. Thus, a feature specified as "first" or "second" may explicitly or implicitly include one or more of such features. Throughout this application, unless otherwise specified, "plurality" means two or more.

[0121] In the description of this application, it should be noted that, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "connected" should be understood broadly. For example, they can refer to fixed connections, detachable connections, or integral connections; they can refer to direct connections, indirect connections through an intermediate medium, or internal communication between two components. Those skilled in the art will understand the specific meanings of the above terms in this application based on the specific circumstances.

[0122] In the description of this specification, specific features, structures, materials or characteristics may be combined in an appropriate manner in any one or more embodiments or examples.

[0123] The above is only part of the implementation methods of the present application. It should be pointed out that for ordinary technicians in this technical field, without departing from the technical concept of the solution of the present application, other similar implementation methods based on the technical ideas of the present application also fall within the protection scope of the embodiments of the present application.

Claims

1. An electroluminescent device, characterized in that include: at least two stacked light-emitting layers; A charge generation layer, located between two adjacent light-emitting layers, comprising a stacked hole generation layer and an electron generation layer; The host-guest doping ratio of the hole generation layer is a first doping ratio, the host-guest doping ratio of the electron generation layer is a second doping ratio, and the ratio between the first doping ratio and the second doping ratio is not less than 3:1 and not greater than 20:

1.

2. The electroluminescent device according to claim 1, wherein The host material of the hole generating layer includes at least one of the following compounds:

3. The electroluminescent device according to claim 1, wherein The guest material of the hole generating layer includes at least one of the following compounds:

4. The electroluminescent device according to claim 1, wherein The host material of the electron generation layer includes at least one of the following compounds:

5. The electroluminescent device according to any one of claims 1 to 4, characterized in that: The light-emitting layer includes: a first sub-pixel and a second sub-pixel; The hole generating layer includes: a first hole generating substructure corresponding to the first subpixel, and a second hole generating substructure corresponding to the second subpixel; The driving voltage of the first sub-pixel is higher than the driving voltage of the second sub-pixel, and the conductivity of the first hole generating substructure is higher than the conductivity of the second hole generating substructure.

6. The electroluminescent device according to claim 5, wherein: The host-guest doping ratio of the first hole generating substructure is greater than the host-guest doping ratio of the second hole generating substructure; And / or, a first gap exists between the first hole-generating substructure and the second hole-generating substructure.

7. The electroluminescent device according to claim 6, characterized in that The first interval is not less than 2 micrometers.

8. The electroluminescent device according to any one of claims 1 to 4, characterized in that: The light-emitting layer includes: a first sub-pixel and a second sub-pixel; The electron generation layer includes: a first electron generation substructure corresponding to the first subpixel, and a second electron generation substructure corresponding to the second subpixel; The driving voltage of the first sub-pixel is higher than the driving voltage of the second sub-pixel, and the conductivity of the first electron generating substructure is higher than the conductivity of the second electron generating substructure.

9. The electroluminescent device according to claim 8, characterized in that The host-guest doping ratio of the first electron-generating substructure is greater than the host-guest doping ratio of the second electron-generating substructure; And / or, a second interval is provided between the first electron-generating substructure and the second electron-generating substructure.

10. The electroluminescent device according to claim 9, characterized in that The second interval is not less than 2 micrometers.

11. The electroluminescent device according to any one of claims 1 to 4, characterized in that: The light-emitting layer includes: a first sub-pixel, a second sub-pixel and a third sub-pixel; The driving voltage of the first sub-pixel is higher than the driving voltage of the second sub-pixel and the driving voltage of the third sub-pixel; There is a third interval between the first sub-pixel and the second sub-pixel, and there is a fourth interval between the first sub-pixel and the third sub-pixel.

12. The electroluminescent device according to claim 11, characterized in that At least one of the third interval and the fourth interval is not less than 2 micrometers.

13. A display panel, characterized in that: include: An electroluminescent device as claimed in any one of claims 1 to 12.

14. A display device, characterized in that: include: The display panel as claimed in claim 13.

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