Voltage block group selection of a block of a memory device after power up of the memory device

By rapidly estimating the duration of the power-down state after the memory device is powered on and updating the voltage block group assignment, the problem of increased read error rate caused by threshold voltage drift is solved, and the power-on performance and scanning process of the memory device are optimized.

CN115148237BActive Publication Date: 2026-06-26MICRON TECHNOLOGY INC
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
MICRON TECHNOLOGY INC
Filing Date
2022-03-31
Publication Date
2026-06-26

AI Technical Summary

Technical Problem

Existing technologies cannot effectively solve the problem of increased read operation error rate caused by the drift of threshold voltage of memory cells over time, and scanning all blocks of the memory device to update voltage block group assignment will result in performance loss.

Method used

By quickly estimating the duration of the power-down state after the memory device is powered on, and updating the voltage block group assignment based on the post-programming time of each block, the number of blocks that need to be scanned is reduced, thus optimizing the voltage block group selection process.

Benefits of technology

It improves the performance of the memory device after power-on, reduces the performance loss of scanning memory device blocks, and improves the accuracy and efficiency of read operations.

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Abstract

This disclosure relates to voltage block group selection for blocks of a memory device after power up of the memory device. A processing device of a memory sub-system is configured to detect a power up event associated with the memory device, scan one or more blocks of a plurality of blocks of the memory device to determine a respective time after program TAP associated with each block of the one or more blocks, estimate a duration of a power down state prior to the power up event based on the respective TAP of the each block of the one or more blocks, and update a voltage block group assignment for the plurality of blocks associated with the memory device based on the duration of the power down state.
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