A device for generating an adjustable magnetic field and an etching method thereof

Abstract

The present invention provides an adjustable magnetic field generating device and an etching method thereof, wherein the device comprises: an arc cathode assembly; the arc cathode assembly comprises a movable magnet group and an arc target corresponding to the movable magnet group; the movable magnet group comprises a plurality of magnet units; each of the magnet units can be moved to adjust the distance between the magnet unit and the arc target to change the distribution of the magnetic field on the surface of the arc target, so as to facilitate etching of the substrate through the arc target. The adjustable magnetic field generating device provided by the present invention changes the distribution of the magnetic field on the surface of the arc target by adjusting the distance between the plurality of magnet units in the movable magnet group and the arc target respectively, so that the magnetic field on the surface of the arc target is evenly distributed, thereby facilitating the uniform etching of the arc target, and the adjustment method is simple and easy to operate, which provides convenience for etching the substrate.

Description

Technical Field

[0001] The invention relates to the technical field of arc cathode magnetic field etching, and more specifically to an adjustable magnetic field generating device and an etching method thereof. Background Art

[0002] The principle of arc evaporation is to use an arc ignition needle to start an arc on the arc target surface, forming an arc light that can be self-sustaining. The self-sustaining arc light comes from the magnetic field design of the arc cathode.

[0003] In traditional methods, permanent magnets and electromagnetic coils are generally used to achieve arc evaporation. In industrial scenarios, a simple permanent magnet method is often used. If the film layer has special requirements or high stability requirements, the electromagnetic coil method is often used because the coil current is easier to adjust, so that it is more convenient to find a suitable magnetic field to solve process problems.

[0004] However, the coil involves heating factors of enameled wire and the neat winding action is restricted, which leads to its seldom seen in industrial use. Moreover, it is difficult to find the cause of damage and accurate maintenance is impossible. Summary of the invention

[0005] In order to solve the above-mentioned defects, the present invention provides an adjustable magnetic field generating device, which is applied to etching a substrate, comprising:

[0006] The arc cathode assembly includes a movable magnet group and an arc target corresponding to the movable magnet group;

[0007] The movable magnet group includes a plurality of magnet units;

[0008] Each of the magnet units can be moved to adjust the distance between the magnet unit and the arc target to change the distribution of the magnetic field on the surface of the arc target, so as to facilitate etching of the substrate through the arc target.

[0009] Preferably, the plurality of magnet units can be arranged in layers with gaps from the center to the outside according to their sizes to form a nested structure; and the axial direction of the nested structure is perpendicular to the arc target, and the radial section of the nested structure is parallel to the arc target.

[0010] Preferably, in the movable magnet group, the nested structure generates a magnetic field by having two adjacent magnet units from the center to the outside facing the end surface of the arc target with opposite magnetic poles, so as to form a corresponding magnetic field closed area on the surface of the arc target. Preferably, under the action of the opposite magnetic poles of the magnet units, the magnet unit with an N pole at one end facing the arc target generates magnetic lines of force that are output toward the arc target and pass through the arc target, and enter the S pole of the adjacent magnet unit after passing through the arc target.

[0011] Preferably, the arc cathode assembly includes a columnar magnet unit and a plurality of annular magnet units;

[0012] Preferably, each of the magnet units comprises a magnet body and a magnet yoke connected to the magnet body; wherein the magnet yoke is arranged at one end of the magnet unit away from the arc target.

[0013] Preferably, with the columnar magnet unit as the center, a plurality of the magnet units are nested together, and the circular planes of each of the magnet units are parallel to each other;

[0014] Preferably, the shape of the arc target is a circle corresponding to the shape of the movable magnet group;

[0015] Preferably, the size of the end surface of the arc target corresponding to the movable magnet is not less than the size of the outermost magnet unit of the nested structure of the movable magnet group;

[0016] Preferably, the size of the cross section of each of the magnet units is proportional to the size of the magnetic flux inside the magnet unit.

[0017] Preferably, the movable magnet group of the arc cathode assembly includes four magnet units, which are a columnar magnetic column arranged at a central position, and a first magnetic ring, a second magnetic ring and a third magnetic ring nested outside the magnetic column in sequence from the inside to the outside with the magnetic column as the center.

[0018] Preferably, the material of the magnet unit in the arc cathode assembly includes one or both of AlFeB and FeCoNi.

[0019] Preferably, the adjustable magnetic field generating device further comprises a vacuum containing chamber, and an inert gas input mechanism connected to the vacuum containing chamber;

[0020] The vacuum containing chamber comprises a shell, a mounting portion and a shielding cover;

[0021] The arc target is connected to the housing through the mounting portion;

[0022] The shielding cover is arranged on the mounting portion and connected to the arc target;

[0023] A vacuum containing cavity is provided in the shell, and the substrate to be etched is provided in the vacuum containing cavity;

[0024] The movable magnet group is arranged outside the vacuum containing cavity corresponding to the arc target.

[0025] Preferably, the mounting portion comprises a target seat and a vacuum seal;

[0026] The arc target is installed on the shell through the target seat; the vacuum seal is arranged on the target seat and is arranged parallel to the shielding cover, and the arc target is arranged between the vacuum seal and the shielding cover.

[0027] In addition, to solve the above problems, the present invention also provides an etching method based on an adjustable magnetic field generating device, comprising:

[0028] Mounting the arc target on the mounting portion of the adjustable magnetic field generating device as described above;

[0029] The distance from the end faces of the circular planes of the magnetic columns, the first magnetic ring, the second magnetic ring and the third magnetic ring in the movable magnet group to the arc target is adjusted so that the magnetic lines of force output by each magnet unit pass through the arc target to form a magnetic field and etch the substrate based on the arc target.

[0030] Preferably, the distances from the end faces of the circular planes of the magnetic columns, the first magnetic ring, the second magnetic ring and the third magnetic ring in the movable magnet group to the arc target are adjusted in sequence from the inside to the outside in radial direction according to the material of the movable magnet group, including:

[0031] According to the material of the movable magnet group, the distances from the end faces of the circular planes of the magnetic columns, the first magnetic ring, the second magnetic ring and the third magnetic ring in the movable magnet group to the arc target are adjusted in sequence from the inside to the outside in radial direction; wherein the material of the movable magnet group includes one or both of AlFeB and FeCoNi.

[0032] Preferably, the distance from the end face of the circular plane of the magnetic column to the arc target is L 4 , the distance from the end face of the circular plane of the first magnetic ring to the arc target is L 3 , the distance from the end face of the circular plane of the second magnetic ring to the arc target is L 2 The distance from the end face of the circular plane of the third magnetic ring to the arc target is L 1 ;

[0033] The method of adjusting the distances from the end faces of the circular planes of the magnetic columns, the first magnetic ring, the second magnetic ring and the third magnetic ring in the movable magnet group to the arc target in sequence from the inside to the outside in radial direction according to the material of the movable magnet group includes:

[0034] Determine the L of the magnetic column 4 When the material of the magnetic column is AlFeB, L 4 is 30-80mm; when the material of the magnetic column is FeCoNi, L 4 15-40mm;

[0035] On the basis of the magnetic column, the first magnetic ring is added, according to the formula L 3 =a×L 4 Determine L3 , when the material of the first magnetic ring is AlFeB, a is 30-60%; when the material of the first magnetic ring is FeCoNi, a is 60-90%;

[0036] On the basis of the first magnetic ring, the second magnetic ring is added, according to the formula Determine L 2 ; Wherein b and c are natural numbers, b≥c; when the material of the second magnetic ring is AlFeB material, c is 1, and b is 1-4; when the material of the second magnetic ring is FeCoNi material, c is 4, and b is 5-8;

[0037] On the basis of the second magnetic ring, the third magnetic ring is added, according to the formula L 1 -L 2 =f determines L 1 , when the material of the third magnetic ring is AlFeB material, f is 4-8mm; when the material of the third magnetic ring is FeCoNi material, f is 1-5mm;

[0038] Preferably, when the material of the magnetic column is AlFeB, L 4 When the material of the magnetic column is FeCoNi, L 4 20-35mm;

[0039] Preferably, when the material of the first magnetic ring is AlFeB, a is 40-50%; when the material of the first magnetic ring is FeCoNi, a is 70-80%;

[0040] Preferably, when the material of the second magnetic ring is AlFeB, c is 1 and b is 2-4; when the material of the second magnetic ring is FeCoNi, c is 4 and b is 5-7;

[0041] Preferably, when the material of the second magnetic ring is AlFeB, c is 1 and b is 3-4; when the material of the second magnetic ring is FeCoNi, c is 4 and b is 5-6;

[0042] Preferably, when the material of the third magnetic ring is AlFeB, f is 5-8 mm; when the material of the third magnetic ring is FeCoNi, f is 1-3 mm;

[0043] Preferably, when the material of the third magnetic ring is AlFeB, f is 7-8 mm; when the material of the third magnetic ring is FeCoNi, f is 1-2 mm.

[0044] The present invention provides an adjustable magnetic field generating device and an etching method thereof. The adjustable magnetic field generating device comprises: an arc cathode assembly; the arc cathode assembly comprises a movable magnet group and an arc target corresponding to the movable magnet group; the movable magnet group comprises a plurality of magnet units; each of the magnet units can be moved to adjust the distance between the magnet unit and the arc target to change the distribution of the magnetic field on the surface of the arc target, so as to facilitate etching of the substrate through the arc target. The adjustable magnetic field generating device provided by the present invention changes the distribution of the magnetic field on the surface of the arc target by adjusting the distance between the plurality of magnet units in the movable magnet group and the arc target respectively, so that the magnetic field on the surface of the arc target is evenly distributed, thereby facilitating the uniform etching of the arc target, and the adjustment method is simple and easy to operate, which provides convenience for etching the substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0045] Figure 1 It is a schematic diagram of the overall structure of the adjustable magnetic field generating device of the present invention from a top view;

[0046] Figure 2 It is a schematic diagram of the cross-section of the arc cathode assembly of the adjustable magnetic field generating device of the present invention;

[0047] Figure 3 It is a structural schematic diagram of a movable magnet group of an adjustable magnetic field generating device of the present invention;

[0048] Figure 4 It is a schematic diagram of the magnetic field lines and the magnetic field closed area on the arc target surface of the adjustable magnetic field generating device of the present invention;

[0049] Figure 5 A schematic diagram of the distribution of magnetic lines of force in an arc cathode assembly of an adjustable magnetic field generating device of the present invention;

[0050] Figure 6 It is a schematic diagram of the movable magnet group of the adjustable magnetic field generating device of the present invention before etching when the distance between each magnet unit and the arc target is equal;

[0051] Figure 7 It is a schematic diagram of etching when the distance between each magnet unit and the arc target in the movable magnet group of the adjustable magnetic field generating device of the present invention is equal;

[0052] Figure 8 It is a schematic diagram of the magnet unit in the movable magnet group of the adjustable magnetic field generating device of the present invention being made of AlFeB material after adjusting the distance with the arc target and before etching;

[0053] Fig. 9 It is a schematic diagram of the magnet unit in the movable magnet group of the adjustable magnetic field generating device of the present invention after etching after adjusting the distance with the arc target when the material of the magnet unit is AlFeB material;

[0054] Fig.10 It is a schematic diagram of the magnet unit in the movable magnet group of the adjustable magnetic field generating device of the present invention being made of FeCoNi material after adjusting the distance with the arc target and before etching;

[0055] Fig.11 It is a schematic diagram of etching after adjusting the distance between the magnet unit and the arc target when the material of the magnet unit in the movable magnet group of the adjustable magnetic field generating device of the present invention is FeCoNi.

[0056] Reference numerals:

[0057] 100, adjustable magnetic field generating device; 110, arc cathode assembly; 111, movable magnet group; 1111, magnet unit; 1111a, magnet body; 1111b, magnet yoke; 1111c, gap; 1112, magnetic column; 1113, first magnetic ring; 1114, second magnetic ring; 1115, third magnetic ring; 112, arc target; 120, vacuum containing chamber; 130, inert gas input mechanism; 140, shell; 141, vacuum containing cavity; 150, mounting portion; 151, target seat; 152, vacuum seal; 160, shielding cover; 170, magnetic lines of force; 171, first bending line; 172, second bending line; 173, third bending line; 180, magnetic field closed area; 181, first etching area; 182, second etching area; 183, third etching area; 190, substrate.

[0058] The realization of the purpose, functional features and advantages of the present invention will be further explained in conjunction with embodiments and with reference to the accompanying drawings. DETAILED DESCRIPTION

[0059] The embodiments of the present application are described in detail below, and examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present application, and cannot be understood as limiting the present application.

[0060] In the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0061] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of this application, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0062] In this application, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0063] In the present application, unless otherwise clearly specified and limited, a first feature being “above” or “below” a second feature may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, a first feature being “above”, “above”, and “above” a second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. A first feature being “below”, “below”, and “below” a second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0064] Example:

[0065] refer to Figure 1 This embodiment provides an adjustable magnetic field generating device 100, which is used for etching a substrate 190, and includes: an arc cathode assembly 110; the arc cathode assembly 110 includes a movable magnet group 111 and an arc target 112 corresponding to the movable magnet group 111; the movable magnet group 111 includes a plurality of magnet units 1111;

[0066] Each of the magnet units 1111 can be moved to adjust the distance between itself and the arc target 112 to change the distribution of the magnetic field on the surface of the arc target 112 , so as to facilitate etching of the substrate 190 through the arc target 112 .

[0067] As described above, the distances between the multiple magnet units 1111 in the movable magnet group 111 and the arc target 112 are adjusted respectively to change the distribution of the magnetic field on the surface of the arc target 112, so that the magnetic field on the surface of the arc target 112 is evenly distributed, which is conducive to the uniform etching of the arc target 112, and the adjustment method is simple and easy to operate, which provides convenience for etching the substrate 190. Furthermore, the multiple magnet units 1111 can be arranged in layers with gaps 1111c from the center to the outside according to their sizes, forming a nested structure; and the axial direction of the nested structure is perpendicular to the arc target 112, and the radial section of the nested structure is parallel to the arc target 112;

[0068] Furthermore, in the movable magnet group 111, the magnetic poles of two adjacent magnet units 1111 from the center to the outside of the nested structure facing the end surface of the arc target 112 are opposite to each other to generate a magnetic field, so as to form a corresponding magnetic field closed area 180 on the surface of the arc target 112;

[0069] Each of the magnet units 1111 can be moved to adjust the distance between itself and the arc target 112 to change the distribution of the magnetic field on the surface of the arc target 112 , so as to facilitate etching of the substrate 190 through the arc target 112 .

[0070] As mentioned above, the arc cathode assembly 110 includes a movable magnet group 111 and an arc target 112, wherein the arc target 112 corresponds to the movable magnet group 111. In application, the movable magnet group 111 generates a magnetic field which is output to the surface of the arc target 112 and passes through the surface of the arc target 112, thereby generating a magnetic field through the arc target 112 to etch the substrate 190.

[0071] As mentioned above, the movable magnet group 111 includes a plurality of magnet units 1111 , and the plurality of magnet units 1111 can be nested together, thus forming a surrounding and surrounded shape, constituting a nested structure, and there are gaps 1111c of a certain size between the magnet units 1111 .

[0072] As mentioned above, the plurality of magnet units 1111 form a nested structure surrounded from the inside to the outside, referring to Figure 2 The axial direction of the nested structure is perpendicular to the end face of the magnet unit 1111 facing the arc target 112, and the radial direction of the nested structure is parallel to the end face of the magnet unit 1111 facing the arc target 112. Therefore, after the magnet units 1111 form a nested structure, each of the magnet units 1111 has one end facing the arc target 112 and can be fully displayed. The nested structure of the magnet units 1111 can be referred to Figure 3 .

[0073] As described above, in the nested structure, the magnetic poles of the end faces of two adjacent magnet units 1111 facing one end of the arc target 112 are opposite, and the opposite magnetic poles form magnetic lines of force 170 for directional flow output, thereby forming a magnetic field.

[0074] Due to the nested enclosing structure, the magnetic field is formed by two nested and adjacent magnet units 1111, and output to the arc target 112 opposite to form a magnetic field closed area 180, refer to Figure 4 .

[0075] As described above, each two adjacent magnet units 1111 can form a magnetic field closed area 180, thereby forming a plurality of layers of magnetic field closed areas 180 of corresponding shapes on the opposite arc target 112. Therefore, the shape of the magnetic field closed area 180 corresponds to the shape of the movable magnet group 111 in the arc cathode assembly 110.

[0076] As mentioned above, a movable magnet group 111 includes a plurality of magnet units 1111, and a nested structure is formed between the magnet units 1111 from the center to the periphery. The number of magnet units 1111 is multiple, for example, 5, which are nested in sequence from the inside to the outside to form a 5-layer nested structure.

[0077] As mentioned above, each magnet unit 1111 can be individually adjusted in displacement, and the direction of displacement is the axial direction of the nested structure of the movable magnet group 111. By adjusting the displacement, the distance between the magnet unit 1111 and the arc target 112 can be adjusted. Since the range of the magnetic lines of force 170 (the magnetic lines of force 170 absorbed by the adjacent opposite magnetic poles) output by the magnet unit 1111 is fixed, the magnetic field formed is fixed, so by adjusting the distance from the magnet unit 1111 to the arc target 112, the distribution of the magnetic lines of force 170 in the magnetic field closed area 180 formed on the surface of the arc target 112 can be adjusted, so that the magnetic field on the surface of the arc target 112 is evenly distributed, and when further etching is performed on the substrate 190, the arc target 112 can evenly etch the substrate 190.

[0078] As mentioned above, the magnet unit 1111 can be moved and adjusted by a mechanical mechanism, such as a sliding mechanism, or a mechanical structure of a suspended movable bracket and a roller, to move the magnet unit 1111 from a corresponding position.

[0079] The adjustable magnetic field generating device 100 provided in this embodiment is composed of a nested structure formed by magnet units 1111 with opposite magnetic poles. Adjacent magnet units 1111 form magnetic lines of force 170 passing through the arc target 112 under the action of opposite magnetic poles to form corresponding magnetic field closed areas 180. The distances between a plurality of magnet units 1111 that can be nested together in the movable magnet group 111 and the arc target 112 are adjusted respectively to change the distribution of the magnetic field on the surface of the arc target 112, so that the magnetic field on the surface of the arc target 112 is evenly distributed, which is beneficial to the uniform etching of the arc target 112. In addition, the adjustment method is simple and easy to operate, which provides convenience for etching the substrate 190.

[0080] For further reference, Figure 5 Under the action of the opposite magnetic poles of the magnet unit 1111, the magnet unit 1111 with one end facing the arc target 112 as the N pole generates magnetic lines of force 170 that are output toward the arc target 112 and pass through the arc target 112, and enter the S pole of the adjacent magnet unit 1111 after passing through the arc target 112.

[0081] As mentioned above, the magnetic poles of the end faces of the adjacent magnet units 1111 facing the arc target 112 are opposite. For example, in the nested structure, there are 5 magnet units 1111, which are A, B, C, D, and E from the inside to the outside, with A in the center and E in the outermost layer. If the magnetic pole of A in the center is the S pole, then the magnetic pole distribution is as shown in the following table (the arrow is the output direction of the magnetic field line 170):

[0082]

[0083]

[0084] In the above table, since the magnet unit 1111 is a nested structure surrounded by layers, in the axial section, the layers are distributed from the inside to the outside, and it can be seen that the middle layer A is the innermost layer, and the outer layer B is surrounded by the A layer. In the cross section, it can be seen that there are B layers at both ends of A. The arrows in the above table indicate that the magnetic lines of force 170 output by the N pole are respectively input into the S poles at both ends to form a magnetic field. Therefore, in this example, the output direction of each N pole magnetic line of force 170 has two adjacent S poles, forming two inner and outer magnetic field closed areas 180.

[0085] As described above, the magnetic force lines 170 are output from the N pole of the magnet unit 1111, pass through the space, and then reach the nearest S pole of the adjacent magnet unit 1111. Generally speaking, during this process, the magnetic force lines 170 will pass through the surface of the arc target 112. In theory, these magnetic force lines 170 may be very close to the surface of the arc target 112, or very far from the surface of the arc target 112; and some magnetic force lines 170 may be far away from the surface of the arc target 112.

[0086] Furthermore, the magnetic lines of force 170 output by each of the magnet units 1111 may include magnetic lines of force 170 output from the N pole toward the S poles of different adjacent magnet units 1111.

[0087] In order to clearly illustrate the influence of the magnetic field formed by the magnetic lines of force 170 on etching, in this embodiment, the magnetic lines of force 170 output toward a magnet monomer are divided into a first curved line 171, a second curved line 172 and a third curved line 173 according to different curvatures from large to small. The three curved magnetic lines of force 170 do not mean that the magnetic lines of force 170 are limited to three, but are for better illustrating the magnetic field conditions and principles.

[0088] If the N pole of the magnet monomer in the middle position, it will send at least three curved magnetic lines 170 to the S poles of the magnet monomers on both sides. The length of the magnetic lines 170 can represent the strength of the axial magnetic field formed by the magnet monomer. The stronger the axial magnetic field, the stronger the activation action, and vice versa.

[0089] Therefore, the radial magnetic field formed by the third curved line 173 with the smallest curvature and the longest length is relatively weak, and the arc effect on the surface of the arc target 112 is not significant.

[0090] The first curved line 171 with the largest curvature and the shortest length forms the strongest magnetic field relative to the other magnetic lines of force 170 , which determines the ability to etch the surface of the arc target 112 and the etching depth.

[0091] The magnetic field line 170 between the first bending line 171 and the third bending line 173 , that is, the second bending line 172 , has a curvature and a length between the first bending line 171 and the third bending line 173 , and the size of the area covered by it determines the size of the arc spot on the surface of the arc target 112 .

[0092] This can be seen from the schematic diagram of the magnetic lines of force 170 formed on the surface of the arc target 112. After the magnetic lines of force 170 pass through the surface of the arc target 112, different magnetic field closed areas 180 can be formed, and the corresponding ones are different etching areas. In this embodiment, theoretically, the third etching area 183 (outermost), the second etching area 182 (between the two etching areas) and the first etching area 181 (center) can be formed in sequence from the outer circle to the inner circle. Generally, the first etching area 181 has the most magnetic lines of force 170, and the third etching area 183 has the least magnetic lines of force 170. However, according to the ratio of the amount of magnetic lines of force 170 to the covered area, the ratio of the second etching area 182 is the lowest, and the ratio of the third etching area 183 is the largest.

[0093] Therefore, based on the principle of magnetic field, the uniformity of magnetic field distribution on the surface of the arc target 112 can be adjusted by adjusting the distance between each magnet unit 1111 and the back of the arc target 112 , thereby facilitating uniform etching of the arc target 112 .

[0094] Further, the arc cathode assembly 110 includes a columnar magnet unit 1111 and a plurality of annular magnet units 1111.

[0095] As described above, the central magnet unit 1111 is cylindrical, and the other magnet units 1111 surrounding it are annular.

[0096] Further, each magnet unit 1111 includes a magnet body 1111a and a magnet yoke 1111b connected to the magnet body 1111a; wherein, the magnet yoke 1111b is provided at one end of the magnet unit 1111 away from the arc target 112.

[0097] Each magnet unit 1111 includes two parts, namely a magnet body 1111a (the end facing the arc target 112) and a magnet yoke 1111b (the end away from the arc target 112).

[0098] Further, with the columnar magnet unit 1111 as the center, a plurality of magnet units 1111 are nested together, and the circular planes of each magnet unit 1111 are parallel to each other.

[0099] Between the magnet units 1111, their circular planes are parallel to each other, forming a nested structure.

[0100] Further, the shape of the arc target 112 is circular corresponding to the shape of the movable magnet group 111;

[0101] Further, the size of the end face of the arc target 112 corresponding to the movable magnet group 111 is not less than the size of the outermost magnet unit 1111 of the nested structure of the movable magnet group 111;

[0102] As described above, the shape of the arc target 112 corresponds to the shape of the movable magnet group 111, and it can be the same circular shape. Due to its certain thickness, it can be a cylindrical structure. The circular surface of the arc target 112 is the surface facing the movable magnet group 111, and this surface is parallel to the radial direction of the movable magnet group 111.

[0103] To ensure the effect of magnetic field generation, the size of the circular surface of the arc target 112 is not less than the size of the outermost magnet unit 1111 of the movable magnet group 111.

[0104] Further, the size of the cross-section of each magnet unit 1111 is proportional to the magnitude of the magnetic flux inside the magnet unit 1111.

[0105] Furthermore, the movable magnet group 111 of the arc cathode assembly 110 includes four magnet units 1111, which are a columnar magnetic column 1112 located at the center, and a first magnetic ring 1113, a second magnetic ring 1114 and a third magnetic ring 1115 nested in sequence from the inside to the outside outside the magnetic column 1112 with the magnetic column 1112 as the center.

[0106] From the inside to the outside, there are respectively a magnetic column 1112 located at the center, and a first magnetic ring 1113, a second magnetic ring 1114 and a third magnetic ring 1115 on the outer circle.

[0107] Furthermore, the material of the magnet unit 1111 in the arc cathode assembly 110 includes one or both of AlFeB and FeCoNi.

[0108] Furthermore, the adjustable magnetic field generating device 100 also includes a vacuum containing chamber 120 and an inert gas input mechanism 130 connected to the vacuum containing chamber 120 .

[0109] As mentioned above, the vacuum chamber 120 is used to form a vacuum environment, and a substrate 190 for etching is placed inside the vacuum chamber 120 .

[0110] The vacuum chamber 120 may be connected to, but is not limited to, a vacuum pump, which may be an oil pump or a water pump.

[0111] As mentioned above, the inert gas input mechanism 130 connected to the vacuum chamber 120 is used to input inert gas into the vacuum chamber 120. The inert gas may include but is not limited to: helium, neon, argon, krypton, xenon, radon, Og, etc.

[0112] The vacuum chamber 120 includes a housing 140, a mounting portion 150 and a shielding cover 160;

[0113] The arc target 112 is connected to the housing 140 through the mounting portion 150;

[0114] As mentioned above, the connection method between the arc target 112 and the mounting portion 150 can be abutment or clamping, which is not limited here.

[0115] The shielding cover 160 is arranged on the mounting portion 150 and connected to the arc target 112. The shielding cover 160 is connected to the arc target 112. A vacuum containing cavity 141 is arranged in the shell 140. The substrate 190 to be etched is arranged in the vacuum containing cavity 141. The movable magnet group 111 is arranged outside the vacuum containing cavity 141 corresponding to the arc target 112.

[0116] As mentioned above, the movable magnet group 111 is disposed outside the vacuum chamber 141 , and the substrate 190 is disposed inside the vacuum chamber 141 .

[0117] Further, the mounting portion 150 includes a target seat 151 and a vacuum seal 152;

[0118] The arc target 112 is mounted on the housing 140 through the target base 151 ; the vacuum seal 152 is disposed on the target base 151 and is arranged parallel to the shielding cover 160 , and the arc target 112 is disposed between the vacuum seal 152 and the shielding cover 160 .

[0119] As mentioned above, the vacuum seal 152 is installed on the housing 140 through the target base 151; the vacuum seal 152, the arc target 112, and the shielding cover 160 are arranged in sequence and in parallel.

[0120] In addition, the present invention also provides an etching method based on the adjustable magnetic field generating device 100, comprising:

[0121] The arc target 112 is mounted on the mounting portion 150 of the adjustable magnetic field generating device 100 as described above;

[0122] The distances from the end faces of the circular planes of the magnetic columns 1112, the first magnetic ring 1113, the second magnetic ring 1114 and the third magnetic ring 1115 in the movable magnet group 111 to the arc target 112 are adjusted so that the magnetic lines of force 170 output by each magnet unit 1111 pass through the arc target 112 to form a magnetic field and etch the substrate 190 based on the arc target 112.

[0123] As described above, after the arc target 112 is installed, it is mounted on the target holder 151 of the mounting portion 150 .

[0124] Then, according to the size of the magnetic field, the distance between each magnet unit 1111, the magnetic column 1112, the first magnetic ring 1113, the second magnetic ring 1114 and the third magnetic ring 1115 in the movable magnet group 111 and the arc target 112 is adjusted, and the moving direction is the radial direction of the movable magnet group 111, until the magnetic lines of force 170 output by each magnet unit 1111 pass through the arc target 112 to form a uniform magnetic field, and the substrate 190 can be uniformly etched based on the arc target 112.

[0125] The etching method based on the adjustable magnetic field generating device 100 provided in this embodiment, after installing the arc target 112, uses the magnet units 1111 that form a nested structure and have opposite magnetic poles, so that the adjacent magnet units 1111 form magnetic lines of force 170 passing through the arc target 112 under the action of opposite magnetic poles to form corresponding magnetic field closed areas 180, and adjusts the distance between the magnet units 1111 in the movable magnet group 111 and the arc target 112 to change the distribution of the magnetic field on the surface of the arc target 112, so that the magnetic field on the surface of the arc target 112 is evenly distributed, which is beneficial to the uniform etching of the arc target 112, and the adjustment method is simple and easy to operate, which provides convenience for etching the substrate 190.

[0126] Further, according to the material of the movable magnet group 111, the distances from the end faces of the circular planes of the magnetic pillars 1112, the first magnetic ring 1113, the second magnetic ring 1114 and the third magnetic ring 1115 in the movable magnet group 111 to the arc target 112 are sequentially adjusted from the inside to the outside in radial direction, including:

[0127] According to the material of the movable magnet group 111, the distances from the end faces of the circular planes of the magnetic columns 1112, the first magnetic ring 1113, the second magnetic ring 1114 and the third magnetic ring 1115 in the movable magnet group 111 to the arc target 112 are adjusted in sequence from the inside to the outside in radial direction; wherein the material of the movable magnet group 111 includes one or both of AlFeB and FeCoNi.

[0128] Furthermore, the distance from the end surface of the circular plane of the magnetic column 1112 to the arc target 112 is L 4 , the distance from the end surface of the circular plane of the first magnetic ring 1113 to the arc target 112 is L 3 The distance from the end surface of the circular plane of the second magnetic ring 1114 to the arc target 112 is L 2 The distance from the end surface of the circular plane of the third magnetic ring 1115 to the arc target 112 is L 1 ;

[0129] According to the material of the movable magnet group 111, the distances from the end faces of the circular planes of the magnetic pillars 1112, the first magnetic ring 1113, the second magnetic ring 1114 and the third magnetic ring 1115 in the movable magnet group 111 to the arc target 112 are sequentially adjusted from the inside to the outside in radial direction, including:

[0130] Determine the L of the magnetic column 1112 4 When the material of the magnetic column 1112 is AlFeB, L 4 When the material of the magnetic column 1112 is FeCoNi, L 4 15-40mm;

[0131] On the basis of the magnetic column 1112, the first magnetic ring 1113 is added, according to the formula L 3 =a×L 4 Determine L 3 , when the material of the first magnetic ring 1113 is AlFeB, a is 30-60%; when the material of the first magnetic ring 1113 is FeCoNi, a is 60-90%;

[0132] On the basis of the first magnetic ring 1113, the second magnetic ring 1114 is added, according to the formula L 2 =(b×L 3 +c×L 4 ) / (b+c) to determine L2; wherein b and c are natural numbers, b≥c; when the material of the second magnetic ring 1114 is AlFeB material, c is 1, and b is 1-4; when the material of the second magnetic ring 1114 is FeCoNi material, c is 4, and b is 5-8;

[0133] On the basis of the second magnetic ring 1114, the third magnetic ring 1115 is added, according to the formula L 1 -L 2 =f determines L 1 When the material of the third magnetic ring 1115 is AlFeB, f is 4-8 mm; when the material of the third magnetic ring 1115 is FeCoNi, f is 1-5 mm;

[0134] In this embodiment, by adjusting the distance between different magnet units 1111 and arc target 112, the uniformity of magnetic field distribution on the surface of arc target 112 can be adjusted, thereby facilitating uniform etching of arc target 112. To ensure uniform magnetic field distribution of arc target 112, different positions of arc target 112 have different determination methods and calculation methods.

[0135] Among them, the distance from the magnet unit 1111 to the arc target 112 needs to be determined from the center to the outer circle:

[0136] 1. Determine the L of magnetic column 1112 4 :

[0137] Determine the L of the magnetic column 1112 4 ,

[0138] (1) When the material of the magnetic column 1112 is AlFeB, L 4 30-80mm;

[0139] (2) When the material of the magnetic column 1112 is FeCoNi, L 4 15-40mm;

[0140] 2. Determine L of the first magnetic ring 11133 :

[0141] On the basis of the magnetic column 1112, the first magnetic ring 1113 is added, according to the formula L 3 =a×L 4 Determine L 3 ;

[0142] (1) When the material of the first magnetic ring 1113 is AlFeB, a is 30-60%;

[0143] (2) When the material of the first magnetic ring 1113 is FeCoNi, a is 60-90%;

[0144] 3. Determine L of the second magnetic ring 1114 2 : On the basis of the first magnetic ring 1113, the second magnetic ring 1114 is added, according to the formula L 2 =(b×L 3 +c×L 4 ) / (b+c) determines L 2 ; Where b and c are natural numbers, b≥c;

[0145] (1) When the material of the second magnetic ring 1114 is AlFeB, c is 1 and b is 1-4;

[0146] (2) When the material of the second magnetic ring 1114 is FeCoNi, c is 4 and b is 5-8;

[0147] 4. Determine L of the third magnetic ring 1115 1 : On the basis of the second magnetic ring 1114, the third magnetic ring 1115 is added, according to the formula L 1 -L 2 =f determines L 1 ;

[0148] (1) When the material of the third magnetic ring 1115 is AlFeB, f is 4-8 mm;

[0149] (2) When the material of the third magnetic ring 1115 is FeCoNi, f is 1-5 mm.

[0150] If there are extra magnet units 1111 , the distance between the magnet units 1111 in the outer circle and the arc target 112 is determined by analogy, so as to gradually adjust the uniformity of the magnetic field formed on the arc target 112 as a whole.

[0151] Preferably, when the material of the magnetic column 1112 is AlFeB, L 4 When the material of the magnetic column 1112 is FeCoNi, L 420-35mm;

[0152] Preferably, when the material of the first magnetic ring 1113 is AlFeB, a is 40-50%; when the material of the first magnetic ring 1113 is FeCoNi, a is 70-80%;

[0153] Preferably, when the material of the second magnetic ring 1114 is AlFeB, c is 1 and b is 2-4; when the material of the second magnetic ring 1114 is FeCoNi, c is 4 and b is 5-7;

[0154] Preferably, when the material of the second magnetic ring 1114 is AlFeB, c is 1 and b is 3-4; when the material of the second magnetic ring 1114 is FeCoNi, c is 4 and b is 5-6;

[0155] Preferably, when the material of the third magnetic ring 1115 is AlFeB, f is 5-8 mm; when the material of the third magnetic ring 1115 is FeCoNi, f is 1-3 mm;

[0156] Preferably, when the material of the third magnetic ring 1115 is AlFeB, f is 7-8 mm; when the material of the third magnetic ring 1115 is FeCoNi, f is 1-2 mm.

[0157] The present invention is further described below by means of specific examples, but it should be understood that these examples are only used for more detailed description and should not be construed as limiting the present invention in any form.

[0158] Embodiment 1:

[0159] 1. Installation and debugging methods:

[0160] (1) Mounting the arc target 112 on the mounting portion 150 of the adjustable magnetic field generating device 100 as described above;

[0161] (2) Adjust the distance from the end surface of the circular plane of the magnetic column 1112, the first magnetic ring 1113, the second magnetic ring 1114 and the third magnetic ring 1115 in the movable magnet group 111 to the arc target 112, so that the magnetic lines of force 170 output by each magnet unit 1111 pass through the arc target 112 to form a magnetic field and etch the substrate 190 based on the arc target 112.

[0162] refer to Figure 1 , and perform installation settings.

[0163] 2. The specifications of the arc target 112 and each magnet unit 1111 are as follows:

[0164] (1) The arc target 112 is made of Ti material, with a diameter of 100 mm and a thickness of 20 mm;

[0165] (2) The outer diameter of the third magnetic ring 1115 is d1=100 mm and the width is w1=5 mm;

[0166] (3) The outer diameter of the second magnetic ring 1114 is d2=70 mm and the width is w2=5 mm;

[0167] (4) The outer diameter of the first magnetic ring 1113 is d3 = 40 mm and the width is w3 = 5 mm;

[0168] (5) The diameter of the magnetic column 1112 is d4 = 10 mm.

[0169] The distances from the end faces of the circular planes of the magnetic column 1112 , the first magnetic ring 1113 , the second magnetic ring 1114 and the third magnetic ring 1115 to the arc target 112 are L4 , L3 , L2 and L1 , respectively.

[0170] 3. Experimental results:

[0171] When L 4 =L 3 =L 2 =L 1 When the magnets are arranged as Figure 6 At this time, the number of magnetic lines of force 170 on the surface of the arc target 112 is as follows: Figure 7 As shown, it can be seen that the three etching areas corresponding to the multiple magnetic field closed areas 180, namely the first etching area 181, the second etching area 182 and the third etching area 183, have a number ratio of magnetic lines of force 170 of 15:14:30.

[0172] At this time, the etching rates of the first etching area 181, the second etching area 182 and the third etching area 183 will change. Generally, the etching rate of the second etching area 182 is relatively large, and the etching rate of the third etching area 183 is the smallest. The cross-sectional view of the arc target 112 after long-term use is as follows: Figure 7 As shown, the end of the arc target 112 facing away from the magnet unit 1111 is uneven, indicating that the uneven magnetic field distribution leads to uneven etching.

[0173] Embodiment 2:

[0174] 1. Installation and debugging methods:

[0175] (1) Mounting the arc target 112 on the mounting portion 150 of the adjustable magnetic field generating device 100 as described above;

[0176] (2) Adjust the distance from the end surface of the circular plane of the magnetic column 1112, the first magnetic ring 1113, the second magnetic ring 1114 and the third magnetic ring 1115 in the movable magnet group 111 to the arc target 112, so that the magnetic lines of force 170 output by each magnet unit 1111 pass through the arc target 112 to form a magnetic field and etch the substrate 190 based on the arc target 112. Specifically, the method of determining the distance from the magnet unit 1111 to the arc target 112 from the center to the outer circle is as follows (four steps ABCD):

[0177] A determines the L of magnetic column 1112 4 :

[0178] Determine the L of the magnetic column 1112 4 ,

[0179] 1) When the material of the magnetic column 1112 is AlFeB, L 4 30-80mm;

[0180] 2) When the material of the magnetic column 1112 is FeCoNi, L 4 15-40mm;

[0181] B determines the L of the first magnetic ring 1113 3 :

[0182] On the basis of the magnetic column 1112, the first magnetic ring 1113 is added, according to the formula L 3 =a×L 4 Determine L 3 ;

[0183] 1) When the material of the first magnetic ring 1113 is AlFeB, a is 30-60%;

[0184] 2) When the material of the first magnetic ring 1113 is FeCoNi, a is 60-90%;

[0185] C determines the L of the second magnetic ring 1114 2 : On the basis of the first magnetic ring 1113, the second magnetic ring 1114 is added, according to the formula L 2 =(b×L 3 +c×L 4 ) / (b+c) determines L 2 ; Where b and c are natural numbers, b≥c;

[0186] 1) When the material of the second magnetic ring 1114 is AlFeB, c is 1, and b is 1-4;

[0187] 2) When the material of the second magnetic ring 1114 is FeCoNi, c is 4 and b is 5-8;

[0188] D determines the L of the third magnetic ring 1115 1 : On the basis of the second magnetic ring 1114, the third magnetic ring 1115 is added, according to the formula L 1 -L 2 =f determines L1;

[0189] 1) When the material of the third magnetic ring 1115 is AlFeB, f is 4-8 mm;

[0190] 2) When the material of the third magnetic ring 1115 is FeCoNi, f is 1-5 mm.

[0191] 2. The specifications of the arc target 112 and each magnet unit 1111 are the same as above.

[0192] 3. Specific application process:

[0193] In Example 1, in order to improve the etching uniformity of the arc target 112, the magnet units 1111 of different materials are adjusted in the above manner, so that the magnetic fields on the surface of the arc target 112 tend to be consistent, thereby improving the etching effect.

[0194] After calculation, it is known that the ratio of the magnetic field strength of the first etching area 181, the second etching area 182 and the third etching area 183 is 15:14:30. By the above method, the magnet arrangement is adjusted according to the material of the magnet unit 1111, so that the ratio of the magnetic field of the magnet unit 1111 made of FeCoNi and AlFeB to the surface of the arc target 112 is close to 1:1:1.

[0195] 4. Experimental results:

[0196] (1) The arc target 112 made of Ti is used for implementation. After the magnet unit 1111 made of AlFeB is adjusted to a magnetic field ratio close to 1:1:1 with respect to the surface of the arc target 112 (installation setting as shown in FIG. Figure 8 ), after a period of etching, the cross-sectional pattern of the arc target 112 after etching is shown in the attached figure. Fig. 9 The end of the arc target 112 away from the magnet unit 1111 is smoother than that shown in Example 1, indicating that the magnetic field is evenly distributed, thus achieving a uniform etching effect.

[0197] (2) The arc target 112 made of Ti is used for implementation. After the magnet unit 1111 made of FeCoNi is adjusted to a magnetic field ratio close to 1:1:1 with respect to the surface of the arc target 112 (installation setting as shown in FIG. Fig.10 ), after a period of etching, the cross-sectional pattern of the arc target 112 after etching is shown in the attached figure. Fig.11The end of the arc target 112 facing away from the magnet unit 1111 is smoother than that shown in Example 1, indicating that the magnetic field is evenly distributed, thus also achieving a uniform etching effect.

[0198] In summary, the adjustable magnetic field generating device 100 and etching method thereof provided in the present embodiment form a nested structure through magnet units 1111 with opposite magnetic poles. Adjacent magnet units 1111 form magnetic lines of force 170 passing through the arc target 112 under the action of opposite magnetic poles to form corresponding magnetic field closed areas 180. The distances between a plurality of magnet units 1111 that can be nested together in the movable magnet group 111 and the arc target 112 are adjusted respectively to change the distribution of the magnetic field on the surface of the arc target 112, so that the magnetic field on the surface of the arc target 112 is evenly distributed, thereby facilitating uniform etching of the arc target 112. In addition, the adjustment method is simple and easy to operate, which provides convenience for etching the substrate 190.

[0199] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, without contradiction.

[0200] Although the embodiments of the present application have been shown and described above, it can be understood that the above embodiments are exemplary and cannot be understood as limitations on the present application. Ordinary technicians in this field can change, modify, replace and modify the above embodiments within the scope of the present application.

Claims

1. An adjustable magnetic field generating device, used for etching a substrate, It is characterized in that include: Arc cathode assembly; The arc cathode assembly includes a movable magnet group and an arc target corresponding to the movable magnet group; The movable magnet group of the arc cathode assembly includes four magnet units, which are a columnar magnetic column arranged at a central position, and a first magnetic ring, a second magnetic ring and a third magnetic ring which are nested outside the magnetic column in sequence from the inside to the outside with the magnetic column as the center; the material of the magnet unit includes one or two of AlFeB and FeCoNi; Each of the magnet units can be moved to adjust the distance between the magnet unit and the arc target to change the distribution of the magnetic field on the surface of the arc target, so as to facilitate etching of the substrate through the arc target; The moving adjustment of the distance between the arc target and the arc target changes the distribution of the magnetic field on the arc target surface, including: adjusting the distance from the end surface of the circular plane of the magnetic column, the first magnetic ring, the second magnetic ring and the third magnetic ring in the movable magnet group to the arc target in sequence from the inside to the outside based on the radial direction according to the material of the movable magnet group, including: Determine the L of the magnetic column 4 When the material of the magnetic column is AlFeB, L 4 is 30-80mm; when the material of the magnetic column is FeCoNi, L 4 15-40mm; Based on the magnetic column, add the first magnetic ring. According to the formula L 3 = a × L 4 Determine L 3 , when the material of the first magnetic ring is AlFeB, a is 30 - 60%; when the material of the first magnetic ring is FeCoNi, a is 60 - 90%; On the basis of the first magnetic ring, the second magnetic ring is added, according to the formula Determine L 2 ; Wherein b and c are natural numbers, b≥c; when the material of the second magnetic ring is AlFeB material, c is 1, and b is 1-4; when the material of the second magnetic ring is FeCoNi material, c is 4, and b is 5-8; Based on the second magnetic ring, the third magnetic ring is added. According to the formula L 1 = L 2 + f to determine L 1 , when the material of the third magnetic ring is AlFeB material, f is 4 - 8 mm; when the material of the third magnetic ring is FeCoNi material, f is 1 - 5 mm; The plurality of magnet units can be arranged in layers with gaps from the center to the outside according to their sizes to form a nested structure; and the axial direction of the nested structure is perpendicular to the arc target, and the radial cross section of the nested structure is parallel to the arc target; In the movable magnet group, the nested structure generates a magnetic field by having two adjacent magnet units from the center to the outside with opposite magnetic poles toward the end surface of the arc target, so as to form a corresponding magnetic field closed area on the surface of the arc target.

2. The adjustable magnetic field generating device according to claim 1, It is characterized in that Under the action of the opposite magnetic poles of the magnet unit, the magnet unit with one end facing the arc target as an N pole generates magnetic lines of force that are output toward the arc target and pass through the arc target, and then enter the S pole of the adjacent magnet unit after passing through the arc target.

3. The adjustable magnetic field generating device as claimed in claim 1, It is characterized in that Each of the magnet units comprises a magnet body and a magnet yoke connected to the magnet body; wherein the magnet yoke is arranged at one end of the magnet unit away from the arc target.

4. The adjustable magnetic field generating device as claimed in claim 3, It is characterized in that With the columnar magnet unit as the center, a plurality of the magnet units are nested together, and the circular planes of each magnet unit are parallel to each other.

5. The adjustable magnetic field generating device as claimed in claim 4, It is characterized in that The shape of the arc target is a circle corresponding to the shape of the movable magnet group.

6. The adjustable magnetic field generating device as claimed in claim 4, It is characterized in that The size of the end surface of the arc target corresponding to the movable magnet is not less than the size of the outermost magnet unit of the nested structure of the movable magnet group.

7. The adjustable magnetic field generating device as claimed in claim 4, It is characterized in that The size of the cross section of each of the magnet units is proportional to the size of the magnetic flux inside the magnet unit.

8. The adjustable magnetic field generating device as claimed in claim 1, It is characterized in that The adjustable magnetic field generating device further comprises a vacuum containing chamber and an inert gas input mechanism connected to the vacuum containing chamber; The vacuum containing chamber comprises a shell, a mounting portion and a shielding cover; The arc target is connected to the housing through the mounting portion; The shielding cover is arranged on the mounting portion and connected to the arc target; A vacuum containing cavity is provided in the shell, and the substrate to be etched is provided in the vacuum containing cavity; The movable magnet group is arranged outside the vacuum containing cavity corresponding to the arc target.

9. The adjustable magnetic field generating device as claimed in claim 8, It is characterized in that The mounting portion includes a target seat and a vacuum seal; The arc target is installed on the shell through the target seat; the vacuum seal is arranged on the target seat and is arranged parallel to the shielding cover, and the arc target is arranged between the vacuum seal and the shielding cover.

10. An etching method based on an adjustable magnetic field generating device, It is characterized in that include: Mounting the arc target on the mounting portion of the adjustable magnetic field generating device according to any one of claims 1 to 7; The distance from the end faces of the circular planes of the magnetic columns, the first magnetic ring, the second magnetic ring and the third magnetic ring in the movable magnet group to the arc target is adjusted so that the magnetic lines of force output by each magnet unit pass through the arc target to form a magnetic field and etch the substrate based on the arc target.

11. The etching method based on the adjustable magnetic field generating device as claimed in claim 10, It is characterized in that The method of adjusting the distance from the end surface of the circular plane of the magnetic column, the first magnetic ring, the second magnetic ring and the third magnetic ring in the movable magnet group to the arc target includes: According to the material of the movable magnet group, the distances from the end faces of the circular planes of the magnetic columns, the first magnetic ring, the second magnetic ring and the third magnetic ring in the movable magnet group to the arc target are adjusted in sequence from the inside to the outside in radial direction; wherein the material of the movable magnet group includes one or both of AlFeB and FeCoNi.

12. The etching method based on the adjustable magnetic field generating device as claimed in claim 11, It is characterized in that The distance from the end face of the circular plane of the magnetic column to the arc target is L 4 , the distance from the end face of the circular plane of the first magnetic ring to the arc target is L 3 , the distance from the end face of the circular plane of the second magnetic ring to the arc target is L 2 The distance from the end face of the circular plane of the third magnetic ring to the arc target is L 1 ; The method of adjusting the distances from the end faces of the circular planes of the magnetic columns, the first magnetic ring, the second magnetic ring and the third magnetic ring in the movable magnet group to the arc target in sequence from the inside to the outside in radial direction according to the material of the movable magnet group includes: Determine the L of the magnetic column 4 When the material of the magnetic column is AlFeB, L 4 is 30-80mm; when the material of the magnetic column is FeCoNi, L 4 15-40mm; On the basis of the magnetic column, the first magnetic ring is added, according to the formula L 3 =a×L 4 Determine L 3 , when the material of the first magnetic ring is AlFeB, a is 30-60%; when the material of the first magnetic ring is FeCoNi, a is 60-90%; On the basis of the first magnetic ring, the second magnetic ring is added, according to the formula Determine L 2 ; Wherein b and c are natural numbers, b≥c; when the material of the second magnetic ring is AlFeB material, c is 1, and b is 1-4; when the material of the second magnetic ring is FeCoNi material, c is 4, and b is 5-8; On the basis of the second magnetic ring, the third magnetic ring is added, according to the formula L 1 =L 2 +f confirm L 1 When the material of the third magnetic ring is AlFeB, f is 4-8 mm; when the material of the third magnetic ring is FeCoNi, f is 1-5 mm.

13. The etching method based on the adjustable magnetic field generating device as claimed in claim 12, It is characterized in that When the material of the magnetic column is AlFeB, L 4 When the material of the magnetic column is FeCoNi, L 4 20-35mm.

14. The etching method based on the adjustable magnetic field generating device as claimed in claim 12, It is characterized in that When the material of the first magnetic ring is AlFeB, a is 40-50%; when the material of the first magnetic ring is FeCoNi, a is 70-80%.

15. The etching method based on the adjustable magnetic field generating device as claimed in claim 12, It is characterized in that When the material of the second magnetic ring is AlFeB, c is 1 and b is 2-4; when the material of the second magnetic ring is FeCoNi, c is 4 and b is 5-7.

16. The etching method based on the adjustable magnetic field generating device as claimed in claim 12, It is characterized in that When the material of the second magnetic ring is AlFeB, c is 1 and b is 3-4; when the material of the second magnetic ring is FeCoNi, c is 4 and b is 5-6.

17. The etching method based on the adjustable magnetic field generating device as claimed in claim 12, It is characterized in that When the material of the third magnetic ring is AlFeB, f is 5-8 mm; when the material of the third magnetic ring is FeCoNi, f is 1-3 mm.

18. The etching method based on the adjustable magnetic field generating device as claimed in claim 12, It is characterized in that When the material of the third magnetic ring is AlFeB, f is 7-8 mm; when the material of the third magnetic ring is FeCoNi, f is 1-2 mm.

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