Semiconductor devices

Abstract

The purpose is to provide a semiconductor device that can suppress the heating of the lead electrode when a large current is passed through and can easily inspect the bonding quality between the lead electrode and the semiconductor element. The semiconductor device comprises: a base portion (1); a semiconductor element (3) mounted on the base portion (1); a metal component (5) one end of which is bonded to the main surface (3a) of the semiconductor element (3) on the opposite side to the side mounted on the base portion (1) through a bonding material (4b) and is arranged in an upright position relative to the semiconductor element (3); and a lead electrode (2) connected to the semiconductor element (3) via the metal component (5). The lead electrode (2) has a through hole (6) extending in the thickness direction. The metal component (5) connects the semiconductor element (3) to the lead electrode (2) in a state where it is inserted into the through hole (6) of the lead electrode (2) together with a part of the bonding material (4b).

Description

Technical Field

[0001] The present invention relates to semiconductor devices. Background Art

[0002] In order to achieve high current, long life, and high reliability in power semiconductor devices, there is a method of directly bonding lead electrodes for circuit connection with external electrodes to semiconductor elements without using wire bonding for the main current path.

[0003] In conventional semiconductor devices, when a lead electrode is bonded to a semiconductor element, the distance between the lead electrode and the semiconductor element is unstable due to fluctuations in the shape of the lead electrode or warping deformation of the lead electrode caused by heating. As a result, the bonding area between the lead electrode and the semiconductor element is sometimes reduced. As a result, there is a problem that the current density of the lead electrode becomes high, and the lead electrode locally heats up when a large current is passed, thereby reducing the life of the semiconductor device.

[0004] For example, in Patent Document 1, a cylindrical power block is horizontally fixed to a predetermined position of a surface electrode by solder, and the second connection circuit is connected to the surface electrode via the horizontal power block. Thus, the bonding area between the second connection circuit and the surface electrode is increased. In addition, horizontal means that the cylindrical axial direction of the power block is parallel to the bonding surface.

[0005] Patent Document 1: Japanese Patent Application Publication No. 2007-287833

[0006] In the technique described in Patent Document 1, the current carrying block is disposed horizontally, so the bonding surface between the second connection circuit and the current carrying block and the bonding surface between the current carrying block and the surface electrode are curved surfaces. Therefore, the bonding surface between the second connection circuit and the surface electrode is a curved surface.

[0007] When inspecting the bonding quality between the second connection circuit and the surface electrode, ultrasonic testing is used as one of the inspection methods. However, there is a problem that it is difficult to inspect a curved bonding surface by ultrasonic testing. Summary of the invention

[0008] Therefore, an object of the present invention is to provide a semiconductor device that can suppress the heat generation of lead electrodes when a large current is passed and can easily inspect the bonding quality between the lead electrodes and a semiconductor element.

[0009] The semiconductor device involved in the present invention comprises: a base portion; a semiconductor element mounted on the base portion; a metal component, one end of which is bonded to the main surface of the semiconductor element on the opposite side to the side mounted on the base portion through a bonding material, and the metal component is arranged in an upright position relative to the semiconductor element; and a lead electrode, which is connected to the semiconductor element via the metal component, the lead electrode having a through hole extending in the thickness direction, and the metal component connects the semiconductor element to the lead electrode in a state where it is inserted into the through hole of the lead electrode together with a part of the bonding material.

[0010] Effects of the Invention

[0011] According to the present invention, the semiconductor element and the lead electrode are connected in a state where the metal component is inserted into the through hole of the lead electrode together with the bonding material, so that the bonding area between the semiconductor element and the lead electrode can be increased. As a result, the current density between the lead electrode and the semiconductor element is reduced, so that the heat generation of the lead electrode when a large current is energized can be suppressed.

[0012] Furthermore, since the bonding surface between the semiconductor element and the lead electrode bonded using the metal member is a flat surface, the bonding quality between the semiconductor element and the lead electrode can be easily inspected. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 This is a cross-sectional view showing the semiconductor device according to the first embodiment in the middle of being assembled.

[0014] Figure 2 This is a cross-sectional view of the semiconductor device according to the first embodiment.

[0015] Figure 3 This is a cross-sectional view showing the semiconductor device according to the second embodiment during assembly.

[0016] Figure 4 This is a perspective view showing an example of a metal component included in the semiconductor device according to the second embodiment.

[0017] Figure 5 This is a perspective view showing another example of the metal component included in the semiconductor device according to the second embodiment.

[0018] Figure 6 This is a cross-sectional view of a semiconductor device according to the second embodiment.

[0019] Figure 7 This is a cross-sectional view showing the semiconductor device according to the third embodiment during assembly.

[0020] Figure 8This is a perspective view showing an example of a metal component included in the semiconductor device according to the third embodiment.

[0021] Fig. 9 This is a perspective view showing another example of the metal component included in the semiconductor device according to the third embodiment.

[0022] Fig.10 This is a cross-sectional view of a semiconductor device according to a third embodiment.

[0023] Fig.11 This is a cross-sectional view showing the semiconductor device according to the fourth embodiment in the middle of being assembled.

[0024] Fig.12 This is a perspective view showing an example of a metal component included in the semiconductor device according to the fourth embodiment.

[0025] Fig.13 This is a perspective view showing another example of the metal component included in the semiconductor device according to the fourth embodiment.

[0026] Fig.14 This is a cross-sectional view of a semiconductor device according to a fourth embodiment.

[0027] Fig.15 This is a cross-sectional view showing the semiconductor device according to the fifth embodiment during assembly.

[0028] Fig.16 This is a perspective view showing an example of a metal component included in the semiconductor device according to the fifth embodiment.

[0029] Fig.17 This is a perspective view showing another example of the metal component included in the semiconductor device according to the fifth embodiment.

[0030] Fig.18 This is a cross-sectional view of a semiconductor device according to a fifth embodiment. DETAILED DESCRIPTION

[0031] <Implementation method 1>

[0032] <Structure of semiconductor device>

[0033] Hereinafter, Embodiment 1 will be described using the drawings. Figure 1 This is a cross-sectional view showing the semiconductor device according to the first embodiment in the middle of being assembled. Figure 2 This is a cross-sectional view of the semiconductor device according to the first embodiment.

[0034] like Figure 1 and Figure 2As shown, the semiconductor device includes a base portion 1 , a semiconductor element 3 , a metal member 5 , lead electrodes 2 , a sealing resin 7 , a case 8 , and external electrode terminals 10 .

[0035] The base unit 1 includes a heat sink 1a, an insulating substrate 1b, and a metal pattern 1c. The heat sink 1a is formed using a metal having excellent thermal conductivity, such as an aluminum alloy or copper.

[0036] The insulating substrate 1b is provided on the upper surface of the heat sink 1a except for the peripheral portion. The insulating substrate 1b is formed using ceramics with excellent thermal conductivity such as aluminum nitride and silicon nitride, or resin with excellent thermal conductivity.

[0037] The metal pattern 1c is provided on the upper surface of the insulating substrate 1b. The metal pattern 1c is formed using copper, aluminum alloy or the like.

[0038] The semiconductor element 3 is mounted on the base portion 1. Specifically, the semiconductor element 3 is bonded to the upper surface of the metal pattern 1c via a bonding material 4a such as solder.

[0039] As semiconductor element 3, IGBTs, diodes, and reverse conducting IGBTs made of silicon (Si) are often used, but MOSFETs and Schottky diodes made of materials having a larger band gap than Si, such as silicon carbide (SiC) or gallium nitride (GaN), may also be used.

[0040] Two semiconductor elements 3 are mounted on the base portion 1 , but the number of semiconductor elements 3 mounted on the base portion 1 is not limited thereto, and a required number of semiconductor elements 3 may be mounted depending on the application.

[0041] like Figure 1 and Figure 2 As shown, the metal member 5 is formed into a cylindrical shape using copper or a copper alloy, and connects the semiconductor element 3 to the lead electrode 2. Alternatively, the metal member 5 may be formed using molybdenum or tungsten having a linear expansion coefficient close to that of the semiconductor element 3.

[0042] One end of the metal member 5 is joined to the main surface 3 a of the semiconductor element 3 on the opposite side to the side mounted on the base portion 1 by a joining material 4 b such as solder.

[0043] The size of the metal component 5 is preferably a size that can stably stand on the main surface 3a of the semiconductor element 3. For example, the semiconductor element 3 is usually rectangular when viewed from above. When the electrode (not shown) formed on the semiconductor element 3 is 5 mm square, the diameter of the metal component 5 is preferably less than 5 mm in consideration of the solder wetting area of ​​the bonding material 4b. However, the diameter of the metal component 5 can also be changed so that the current capacity of the metal component 5 is an appropriate value.

[0044] The lead electrode 2 is formed using copper or a copper alloy, and is connected to the semiconductor element 3 via a metal component 5. A thick wall portion 2a extending downward and thicker than other portions is formed at a portion of the lead electrode 2 that faces the bonding material 4b present around the metal component 5. A through hole 6 extending in the thickness direction is formed in the thick wall portion 2a. The through hole 6 has a diameter larger than the diameter of the metal component 5 so that the metal component 5 can be inserted and a portion of the bonding material 4b can be immersed.

[0045] The lead electrode 2 and the semiconductor element 3 are connected in a state where the metal component 5 is inserted into the through hole 6 of the lead electrode 2 together with a part of the bonding material 4b. In addition, when the thickness of the thick wall portion 2a of the lead electrode 2 is greater than the height of the metal component 5, the upper surface of the metal component 5 may be covered with the bonding material 4b or may be exposed without being covered with the bonding material 4b.

[0046] The case 8 is formed in a rectangular frame shape in a plan view, and is bonded to the upper surface of the base portion 1 with an adhesive (not shown) so as to surround the semiconductor element 3 , the metal member 5 , and the side surfaces of the lead electrodes 2 .

[0047] The external electrode terminal 10 is formed of copper or copper alloy and is, for example, insert-molded in the case 8. One end of the external electrode terminal 10 is fixed to the upper end of the case 8 and the other end is connected to one end of the lead electrode 2 via a bonding material 4d such as solder.

[0048] The encapsulating resin 7 is filled in the housing 8 to encapsulate the semiconductor element 3, the metal component 5 and the lead electrode 2. The encapsulating resin 7 is silicone gel or epoxy resin, but is not limited thereto, and any resin having predetermined physical properties such as elastic modulus, heat resistance, adhesion and linear expansion coefficient can be used.

[0049] Next, use Figure 1 and Figure 2 The method for assembling a semiconductor device is described. First, the base portion 1 and the semiconductor element 3 are bonded together by the bonding material 4a, and then the semiconductor element 3 and the metal component 5 are bonded together by the bonding material 4b. Generally, solder is often used as the bonding materials 4a and 4b. In the bonding step, the two components are bonded to each other by heating to a temperature exceeding the melting point of the bonding materials 4a and 4b.

[0050] The bonding materials 4a and 4b may be formed materials such as sheet solder, or solder paste may be applied by screen printing, dispensing, or 3D printing. The bonding materials 4a and 4b are disposed on the metal pattern 1c and the main surface 3a of the semiconductor element 3, respectively.

[0051] When the metal member 5 is disposed on the bonding material 4b, positioning can be performed using a positioning tool used when mounting the semiconductor element 3, or positioning can be performed using a self-alignment action (self-alignment effect) due to surface tension when the bonding material 4b is melted.

[0052] Next, the housing 8 is joined to the base 1. A silicone or epoxy adhesive (not shown) is applied to the joint surface between the lower end of the housing 8 and the peripheral portion of the upper surface of the heat sink 1a of the base 1. By applying a load to the joint surface coated with the adhesive in this state, the adhesive is brought into close contact with the above-mentioned joint surface. Then, the housing 8 and the heat sink 1a are fastened by self-tapping screws (not shown). Alternatively, instead of fastening by self-tapping screws, the adhesive may be heated and cured while the housing 8 and the heat sink 1a are fixed by a clamp.

[0053] Next, the lead electrode 2 is arranged in such a manner that the metal component 5 arranged on the main surface 3a of the semiconductor element 3 is inserted into the through hole 6 provided in the lead electrode 2. Then, the assembly is heated at a temperature exceeding the melting point of the bonding material 4b, so that the semiconductor element 3, the lead electrode 2, and the metal component 5 are bonded using the bonding material 4b. At this time, the melted bonding material 4b penetrates between the through hole 6 and the metal component 5 and climbs along the side surface of the metal component 5, thereby increasing the bonding area between the semiconductor element 3 and the lead electrode 2. Here, solder may be applied to the side surface of the metal component 5 in advance before heating.

[0054] At the same time, the lead electrode 2 is joined to the external electrode terminal 10 formed on the case 8 via the joining material 4 d.

[0055] Although not shown, in order to control the semiconductor element 3 by an external device, a wire connecting the external electrode terminal 10 connected to the external device and the main surface 3a of the semiconductor element 3 is connected by ultrasonic bonding. As the wire connecting the external electrode terminal 10 and the main surface 3a of the semiconductor element 3, a wire made of aluminum or the like having high thermal conductivity and electrical conductivity is usually used.

[0056] Next, the housing 8 is filled with a sealing resin 7 to seal the semiconductor element 3, the metal component 5, and the lead electrode 2. The assembly is placed in a curing furnace, etc., to cure the sealing resin 7, thereby completing the assembly of the semiconductor device. After the semiconductor device is inspected for required electrical characteristics, etc., the semiconductor device is completed.

[0057] <Effect>

[0058] As described above, the semiconductor device involved in embodiment 1 includes: a base portion 1; a semiconductor element 3, which is mounted on the base portion 1; a metal component 5, one end of which is joined to the main surface 3a of the semiconductor element 3 on the opposite side to the side mounted on the base portion 1 through a bonding material 4b and is arranged in an upright position relative to the semiconductor element 3; and a lead electrode 2, which is connected to the semiconductor element 3 via the metal component 5, the lead electrode 2 having a through hole 6 extending in the thickness direction, and the metal component 5 connects the semiconductor element 3 to the lead electrode 2 when inserted into the through hole 6 of the lead electrode 2 together with a part of the bonding material 4b.

[0059] Since the metal component 5 is inserted into the through hole 6 of the lead electrode 2 together with the bonding material 4b to connect the semiconductor element 3 to the lead electrode 2, the inner surface of the through hole 6 of the lead electrode 2 is bonded to the side surface of the metal component 5 in addition to the bonding surface between the bottom surface of the lead electrode 2 and the main surface 3a of the semiconductor element 3, thereby increasing the bonding area between the semiconductor element 3 and the lead electrode 2. As a result, the current density between the lead electrode 2 and the semiconductor element 3 is reduced, so that the heat generation of the lead electrode 2 when a large current is energized can be suppressed. As a result, the reduction in the life of the semiconductor device can be suppressed, so that the semiconductor device can be used for a long time.

[0060] Conventionally, when the bonding surface between the semiconductor element and the lead electrode is a curved surface, there is a problem that it is difficult to inspect the bonding quality between the semiconductor element and the lead electrode by ultrasonic flaw detection. However, in the first embodiment, the bonding surface between the semiconductor element 3 and the lead electrode 2 bonded by the metal member 5 is a flat surface, so the bonding quality between the semiconductor element 3 and the lead electrode 2 can be easily inspected by ultrasonic flaw detection compared to the case where the bonding surface is a curved surface.

[0061] In addition, when the lead electrode 2 is positioned on the main surface 3a of the semiconductor element 3, a structure is set to insert the metal component 5 arranged on the main surface 3a of the semiconductor element 3 into the through hole 6 provided in the lead electrode 2. This can prevent the lead electrode 2 from warping relative to the main surface 3a of the semiconductor element 3, thereby improving the bonding between the semiconductor element 3 and the lead electrode 2.

[0062] Furthermore, by using the metal member 5 , horizontal positioning can be achieved at the lead electrode 2 without using a positioning tool, so that the manufacturing cost of the semiconductor device can be reduced, and the semiconductor device can be provided at a low cost.

[0063] In addition, the semiconductor device may also be a structure in which three or more semiconductor elements 3 are connected in parallel with respect to one lead electrode 2. It is conceivable that when a semiconductor element 3 having a small outer size is used, the bonding area between the semiconductor element 3 and the lead electrode 2 becomes smaller and the bonding parts become more. Therefore, in the conventional structure, the positioning accuracy of the lead electrode 2 relative to the semiconductor element 3 is reduced, and the bonding property between the semiconductor element 3 and the lead electrode 2 is reduced.

[0064] However, in the structure of the first embodiment, the number of metal parts 5 and through holes 6 of lead electrodes 2 is increased according to the number of semiconductor elements 3, thereby suppressing the decrease in positioning accuracy of lead electrodes 2 relative to semiconductor elements 3 and suppressing the reduction in the bonding area between semiconductor elements 3 and lead electrodes 2. As a result, semiconductor elements 3 with small outer dimensions can be used for semiconductor devices with large current capacity, so semiconductor devices can be provided more cheaply.

[0065] <Implementation method 2>

[0066] <Structure of semiconductor device>

[0067] Next, a semiconductor device according to Embodiment 2 will be described. Figure 3 This is a cross-sectional view showing the semiconductor device according to the second embodiment during assembly. Figure 4 This is a perspective view showing an example of a metal member 5A included in the semiconductor device according to the second embodiment. Figure 5 It is a perspective view showing another example of the metal member 5A. Figure 6 It is a cross-sectional view of a semiconductor device according to Embodiment 2. In Embodiment 2, the same components as those described in Embodiment 1 are denoted by the same reference numerals, and the description thereof is omitted.

[0068] like Figure 3 , Figure 4 and Figure 6 As shown, in the second embodiment, the semiconductor device has a metal component 5A instead of the metal component 5 of the first embodiment. The metal component 5A has a flat plate portion 5a and a column portion 5b. The flat plate portion 5a is formed into a circular plate shape, one main surface, i.e., the lower surface, is bonded to the main surface 3a of the semiconductor element 3 through a bonding material 4b, and the other main surface, i.e., the upper surface, is bonded to the peripheral portion, i.e., the thick wall portion 2a, of the through hole 6 of the lead electrode 2 through a bonding material 4c. Here, the flat plate portion 5a may be not a circular plate but may be a cylindrical portion. Figure 5 The shown one is formed into a rectangular plate shape.

[0069] like Figure 3 , Figure 4 and Figure 6As shown, the column portion 5b is formed in a cylindrical shape, one end of which is connected to the upper surface of the flat plate portion 5a, and is provided in an upright position relative to the flat plate portion 5a.

[0070] Furthermore, since the bonding surface of the flat plate portion 5a with the semiconductor element 3 has a larger area than the surface of the tip portion of the columnar portion 5b inserted into the through hole 6, the metal member 5A can support the lead electrode 2 in a stable state.

[0071] When assembling the semiconductor device, the bonding material 4c is arranged on the flat plate portion 5a, and the lead electrode 2 and the metal component 5A are joined by the bonding material 4c. When the assembly is heated to a temperature exceeding the melting point of the bonding material 4c, the melted bonding material 4c penetrates between the through hole 6 and the column portion 5b, and climbs along the column portion 5b, thereby increasing the bonding area between the semiconductor element 3 and the lead electrode 2. Paste solder can be applied to the column portion 5b as the bonding material 4c, or a plate-shaped solder formed in a manner matching the shape of the column portion 5b can be arranged on the outer peripheral side of the column portion 5b. Alternatively, the metal component 5A after the bonding material 4c and the column portion 5b are pre-joined can be arranged on the main surface 3a of the semiconductor element 3. The basic structure of the semiconductor device other than this is the same as that of the first embodiment.

[0072] <Effect>

[0073] As described above, the semiconductor device according to the second embodiment can suppress the heat generation of the lead electrode 2 when a large current is passed, similarly to the first embodiment, and can easily inspect the bonding quality between the lead electrode 2 and the semiconductor element 3 .

[0074] Furthermore, the metal component 5A includes: a flat portion 5a, whose lower surface is joined to the main surface 3a of the semiconductor element 3 and whose upper surface is joined to the peripheral portion of the through hole 6 of the lead electrode 2; and a column portion 5b, which is arranged to be upright relative to the flat portion 5a and inserted into the through hole 6, and the joining surface between the flat portion 5a and the semiconductor element 3 has a larger area than the surface of the front end portion of the column portion 5b inserted into the through hole 6.

[0075] Therefore, the metal component 5A can stand on the main surface 3a of the semiconductor element 3 in a stable state, and can support the lead electrode 2 in a stable state. Therefore, compared with the case of the first embodiment, the horizontal positioning of the lead electrode 2 can be easily performed, so the semiconductor element 3 and the lead electrode 2 can be bonded in a stable state.

[0076] <Implementation method 3>

[0077] <Structure of semiconductor device>

[0078] Next, a semiconductor device according to Embodiment 3 will be described. Figure 7 This is a cross-sectional view showing the semiconductor device according to the third embodiment during assembly. Figure 8 This is a perspective view showing an example of a metal member 5B included in the semiconductor device according to the third embodiment. Fig. 9 This is a perspective view showing another example of the metal member 5B included in the semiconductor device according to the third embodiment. Fig.10 It is a cross-sectional view of a semiconductor device according to Embodiment 3. In Embodiment 3, the same components as those described in Embodiments 1 and 2 are denoted by the same reference numerals, and description thereof is omitted.

[0079] like Figure 7 , Figure 8 and Fig.10 As shown, in Embodiment 3, the semiconductor device has a metal component 5B instead of the metal component 5A of Embodiment 2. The metal component 5B has a plurality of protrusions 5c relative to the metal component 5A. Specifically, the metal component 5B has a disk-shaped flat plate portion 5a, a columnar column portion 5b, and a plurality of (for example, three) protrusions 5c.

[0080] The plurality of protrusions 5c are provided on the surface of the flat plate portion 5a opposite to the lead electrode 2, that is, on the upper surface, and protrude toward the lead electrode 2. In addition, the plurality of protrusions 5c are formed into a square column shape having a height lower than that of the column portion 5b. When the metal component 5B is inserted into the through hole 6, the plurality of protrusions 5c abut against the thick wall portion 2a of the lead electrode 2. Here, the protrusion 5c corresponds to the first protrusion. In addition, the flat plate portion 5a may be shaped like a square column other than a circular plate. Fig. 9 The shown one is formed into a rectangular plate shape.

[0081] When assembling the semiconductor device, the bonding material 4c is arranged on the flat plate portion 5a, and the lead electrode 2 and the metal member 5B are bonded by the bonding material 4c, but the arrangement method of the bonding material 4c is the same as that in the case of the second embodiment. In addition, the basic structure of the semiconductor device other than this is the same as that in the first embodiment.

[0082] Here, the number of the protrusions 5c is not limited to a plurality, and may be 1. In addition, the protrusions 5c are not limited to a square column shape, and may be a cylindrical shape.

[0083] <Effect>

[0084] As described above, the semiconductor device according to the third embodiment can suppress the heat generation of the lead electrode 2 when a large current is passed, similarly to the first embodiment, and can easily inspect the bonding quality between the lead electrode 2 and the semiconductor element 3 .

[0085] Furthermore, a protrusion 5 c protruding toward the lead electrode 2 is provided on the upper surface of the flat plate portion 5 a which is the surface facing the lead electrode 2 .

[0086] Therefore, the outflow of the bonding material 4c disposed on the upper surface of the flat plate portion 5a can be suppressed by the protruding portion 5c, so that the thickness of the bonding material 4c required for bonding the lead electrode 2 to the metal member 5B can be ensured. As a result, the semiconductor device is less likely to be degraded by temperature changes, and a semiconductor device with a long life can be realized.

[0087] <Implementation method 4>

[0088] <Structure of semiconductor device>

[0089] Next, a semiconductor device according to a fourth embodiment will be described. Fig.11 This is a cross-sectional view showing the semiconductor device according to the fourth embodiment in the middle of being assembled. Fig.12 This is a perspective view showing an example of a metal member 5C included in the semiconductor device according to the fourth embodiment. Fig.13 This is a perspective view showing another example of the metal member 5C included in the semiconductor device according to the fourth embodiment. Fig.14 It is a cross-sectional view of a semiconductor device according to Embodiment 4. In Embodiment 4, the same components as those described in Embodiments 1 to 3 are denoted by the same reference numerals, and description thereof is omitted.

[0090] like Fig.11 , Fig.12 and Fig.14 As shown, in Embodiment 4, the semiconductor device has a metal component 5C instead of the metal component 5A of Embodiment 2. The metal component 5C has a plurality of protrusions 5d relative to the metal component 5A. Specifically, the metal component 5C has a disk-shaped flat plate portion 5a, a columnar column portion 5b, and a plurality of (for example, three) protrusions 5d.

[0091] The plurality of raised portions 5d are provided on the lower surface of the flat plate portion 5a which is the interface with the semiconductor element 3, and are protruded toward the semiconductor element 3. In addition, the plurality of raised portions 5d are formed into a square column shape having a height lower than that of the column portion 5b. When the metal component 5C is arranged on the main surface 3a of the semiconductor element 3, the plurality of raised portions 5d abut against the main surface 3a of the semiconductor element 3. Here, the raised portion 5d is equivalent to the second raised portion. In addition, the flat plate portion 5a may be shaped like a square column other than a circular plate. Fig.13 The shown one is formed into a rectangular plate shape.

[0092] When assembling the semiconductor device, the bonding material 4c is arranged on the flat plate portion 5a, and the lead electrode 2 and the metal member 5C are bonded by the bonding material 4c, but the arrangement method of the bonding material 4c is the same as that of the embodiment 2. The basic structure of the semiconductor device other than this is the same as that of the embodiment 1.

[0093] Here, the number of the protrusions 5d is not limited to a plurality, and may be 1. In addition, the protrusions 5d are not limited to a square column shape, and may be a cylindrical shape.

[0094] <Effect>

[0095] As described above, the semiconductor device according to the fourth embodiment can suppress the heat generation of the lead electrode 2 when a large current is passed, similarly to the first embodiment, and can easily inspect the bonding quality between the lead electrode 2 and the semiconductor element 3 .

[0096] Furthermore, a protrusion 5 d protruding toward the semiconductor element 3 is provided on the lower surface of the flat plate portion 5 a which is a bonding surface with the semiconductor element 3 .

[0097] Therefore, the outflow of the bonding material 4b disposed on the lower surface of the flat plate portion 5a can be suppressed by the protruding portion 5d, so that the thickness of the bonding material 4b required for bonding the metal member 5C to the semiconductor element 3 can be ensured. As a result, the semiconductor device is less likely to be degraded due to temperature changes, and a semiconductor device with a long life can be realized.

[0098] <Implementation method 5>

[0099] <Structure of semiconductor device>

[0100] Next, a semiconductor device according to Embodiment 5 will be described. Fig.15 This is a cross-sectional view showing the semiconductor device according to the fifth embodiment during assembly. Fig.16 This is a perspective view showing an example of a metal member 5D included in the semiconductor device according to the fifth embodiment. Fig.17 This is a perspective view showing another example of the metal member 5D included in the semiconductor device according to the fifth embodiment. Fig.18 It is a cross-sectional view of a semiconductor device according to Embodiment 5. In Embodiment 5, the same components as those described in Embodiments 1 to 4 are denoted by the same reference numerals, and description thereof is omitted.

[0101] like Fig.15 , Fig.16 and Fig.18As shown in the figure, in the fifth embodiment, the semiconductor device has a metal component 5D instead of the metal component 5A of the second embodiment. Compared with the metal component 5A, the metal component 5D has a plurality of protrusions 5c and a plurality of protrusions 5d. Specifically, the metal component 5D has a disk-shaped flat plate portion 5a, a columnar column portion 5b, a plurality of (for example, 3) protrusions 5c, and a plurality of (for example, 3) protrusions 5d. The flat plate portion 5a may be not disk-shaped but may be Fig.17 The shown one is formed into a rectangular plate shape.

[0102] When assembling the semiconductor device, the bonding material 4c is arranged on the flat plate portion 5a, and the lead electrode 2 and the metal member 5D are bonded by the bonding material 4c, but the arrangement method of the bonding material 4c is the same as that of the embodiment 2. The basic structure of the semiconductor device other than this is the same as that of the embodiment 1.

[0103] Here, the number of the protrusions 5c and 5d is not limited to a plurality, and each may be 1. In addition, the protrusions 5c and 5d are not limited to a square column shape, and may be a cylindrical shape. In addition, the protrusion 5c may be different from the protrusion 5d in length, shape or number.

[0104] <Effect>

[0105] As described above, the semiconductor device according to the fifth embodiment can suppress the heat generation of the lead electrode 2 when a large current is passed, similarly to the first embodiment, and can easily inspect the bonding quality between the lead electrode 2 and the semiconductor element 3 .

[0106] Furthermore, the thickness of the bonding material 4c required for bonding the lead electrode 2 to the metal member 5D can be ensured as in the case of the third embodiment, and the thickness of the bonding material 4b required for bonding the metal member 5D to the semiconductor element 3 can be ensured as in the case of the fourth embodiment. As a result, the semiconductor device is less likely to be degraded by temperature changes, and a semiconductor device with a long life can be realized.

[0107] Furthermore, since the length, shape or number of the protrusions 5c is different from those of the protrusions 5d, the thickness of the bonding materials 4b and 4c can be adjusted individually to a desired thickness. Thus, stable bonding of the metal member 5D to the semiconductor element 3 and the lead electrode 2 is achieved.

[0108] In addition, the various embodiments can be freely combined, or the various embodiments can be appropriately modified or omitted.

[0109] Description of the label

[0110] 1 base portion, 2 lead electrodes, 3 semiconductor element, 4a, 4b bonding materials, 5, 5A, 5B, 5C, 5D metal parts, 5a flat plate portion, 5b column portion, 5c, 5d protruding portions, 6 through hole.

Claims

1. A semiconductor device comprising: Base part; a semiconductor element mounted on the base portion; a metal component having one end bonded to a main surface of the semiconductor element on the side opposite to the side mounted on the base portion through a bonding material, and the metal component is provided in an upright position relative to the semiconductor element; as well as a lead electrode connected to the semiconductor element via the metal member, The lead electrode has a through hole extending in the thickness direction, The metal member connects the semiconductor element and the lead electrode in a state where the metal member is inserted into the through hole of the lead electrode together with a part of the bonding material.

2. The semiconductor device according to claim 1, wherein The metal component includes a flat plate portion and a column portion, one main surface of the flat plate portion is bonded to the main surface of the semiconductor element and the other main surface is bonded to the peripheral portion of the through hole of the lead electrode, and the column portion is arranged upright relative to the flat plate portion and inserted into the through hole. A bonding surface of the flat plate portion with the semiconductor element has a larger area than a surface of a front end portion of the column portion inserted into the through hole.

3. The semiconductor device according to claim 2, wherein: A first protrusion protruding toward the lead electrode is provided on a surface of the flat plate portion that faces the lead electrode.

4. The semiconductor device according to claim 2, wherein: A second protrusion that protrudes toward the semiconductor element is provided on a bonding surface of the flat plate portion with the semiconductor element.

5. The semiconductor device according to claim 3, wherein: A second protrusion that protrudes toward the semiconductor element is provided on a bonding surface of the flat plate portion with the semiconductor element.

6. The semiconductor device according to claim 5, wherein: The length, shape or number of the first protrusion is different from that of the second protrusion.

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