An electroluminescent device and a light-emitting device

Abstract

The present invention discloses an electroluminescent device and a lighting device. The electroluminescent device includes: a substrate, the substrate including a non-light-emitting area and a light-emitting area; the light-emitting area including a plurality of spaced-apart light-emitting sub-areas; the non-light-emitting area including a weak sub-area; the weak sub-area including a plurality of first electrode leads located on one side of the substrate, an insulating layer, and a second electrode; the insulating layer being located on the side of the first electrode leads away from the substrate and covering the first electrode leads; the second electrode being located on the side of the insulating layer away from the first electrode leads; the first electrode leads being connected to the light-emitting sub-areas in a one-to-one correspondence; the product of the area of the vertical projection of a single first electrode lead on the second electrode and the dielectric constant of the material of the insulating layer is greater than the electrostatic test threshold. The present invention can improve the anti-static ability of the electroluminescent device without adding other anti-static circuits.

Description

Technical Field

[0001] The present invention relates to the field of light-emitting technologies, and particularly to an electroluminescent device and a lighting device. Background Art

[0002] Static electricity is a common discharge phenomenon in nature. The voltage of static electricity can be as high as several thousand volts, which is devastating to the optoelectronic properties of semiconductor devices. Static electricity is usually generated artificially. For example, people may generate static electricity during production, assembly, testing, and storage processes, and the generated static electricity may accumulate in the human body, instruments, or equipment. When people come into contact with these static electricity-carrying objects without knowing it, a discharge path will be formed, instantly damaging the electronic components or systems due to electrostatic discharge.

[0003] In the process of manufacturing and using existing electroluminescent devices, problems such as black dots or bright dots are likely to occur. One of the important reasons is the effect of static electricity. Static charges are adsorbed on the surface of the product, reach the inside of the light-emitting area through the electrode leads, or the static electricity directly acts on the electrode lead position, causing black dot or bright dot problems, thereby reducing the reliability and lifespan of the electroluminescent device. The static electricity generation modes include: human body mode, mechanical mode, component charging mode, and electric field induction mode. The static electricity generated in the common human body mode and mechanical mode is usually used to test the electroluminescent device. The human body mode refers to the discharge phenomenon formed when a person generates charges during friction and comes into contact with the electroluminescent device. The mechanical mode is the charge release generated when the charges accumulated by a machine during movement or handling come into contact with the electroluminescent device.

[0004] In the process of manufacturing and using electroluminescent devices, whether it is the human body or the equipment discharging to them, the harm of static electricity objectively exists. Currently, the commonly used methods are to add an electrostatic protection circuit or a varistor circuit, but these methods will all cause difficulties in the preparation of electroluminescent devices. Summary of the Invention

[0005] The present invention provides an electroluminescent device and a lighting device, which can improve the anti-static ability of the electroluminescent device without adding other anti-static circuits.

[0006] According to one aspect of the present invention, there is provided an electroluminescent device, which includes:

[0007] A substrate, the substrate includes a non-light-emitting area and a light-emitting area;

[0008] The light-emitting area includes a plurality of spaced-apart light-emitting sub-areas;

[0009] The non-light-emitting area includes a weak sub-area;

[0010] The weak sub-area includes a plurality of first electrode leads, an insulating layer, and a second electrode located on one side of the substrate;

[0011] The insulating layer is located on the side of the first electrode lead away from the substrate and covers the first electrode lead;

[0012] The second electrode is located on the side of the insulating layer away from the first electrode lead;

[0013] The first electrode leads are connected to the light-emitting sub-regions in a one-to-one correspondence;

[0014] The product of the area of the vertical projection of a single first electrode lead on the second electrode and the dielectric constant of the material of the insulating layer is greater than the electrostatic test threshold.

[0015] Optionally, the electrostatic test threshold T is related to the electrostatic standard capacitance C, the electrostatic standard voltage V, the process coefficient a, and the maximum electric field strength E that the material of the insulating layer can withstand 最大 by the following relationship:

[0016]

[0017] Optionally, the second electrode in the weak sub-region extends into each light-emitting sub-region;

[0018] Each light-emitting sub-region further includes a first electrode and a light-emitting functional layer;

[0019] In the light-emitting sub-region, the first electrode is located on one side of the substrate, the light-emitting functional layer is located on the side of the first electrode away from the substrate, and the second electrode is located on the side of the light-emitting functional layer away from the first electrode;

[0020] The first electrode leads are connected to the first electrodes in a one-to-one correspondence.

[0021] Optionally, the non-light-emitting region further includes a lead transmission sub-region;

[0022] The first electrode leads, the insulating layer, and the second electrode in the weak sub-region all extend into the lead transmission sub-region;

[0023] The light-emitting functional layers in each light-emitting sub-region all extend into the lead transmission sub-region;

[0024] In the lead transmission sub-region, the insulating layer is located on the side of the first electrode lead away from the substrate; the light-emitting functional layer is located on the side of the insulating layer away from the first electrode lead; the second electrode is located on the side of the light-emitting functional layer away from the insulating layer;

[0025] The first electrode leads in the lead transmission sub-region are connected to the first electrodes in a one-to-one correspondence.

[0026] Optionally, the non-light-emitting region further includes a bonding sub-region;

[0027] The weak sub-region is located between the bonding sub-region and the lead transmission sub-region;

[0028] The first electrode lead in the weak sub-region extends into the bonding sub-region;

[0029] The insulating layer in the weak sub-region extends into part of the bonding sub-region;

[0030] In the bonding sub-region, at least part of each first electrode lead is exposed.

[0031] Optionally, the dielectric constant of the material of the insulating layer is greater than 3.

[0032] Optionally, the thickness of the insulating layer in the weak sub-region is greater than or equal to the thickness of the insulating layer in the lead transmission sub-region and the thickness of the insulating layer in the bonding sub-region;

[0033] The dielectric constant of the insulating layer in the weak sub-region is greater than or equal to the dielectric constant of the insulating layer in the lead transmission sub-region and the dielectric constant of the insulating layer in the bonding sub-region. Optionally, the width of the first electrode lead in the weak sub-region is greater than or equal to the width of the first electrode lead in the lead transmission sub-region and the width of the first electrode lead in the bonding sub-region.

[0034] Optionally, the angle between the side surface of the first electrode lead and the surface of the first electrode lead close to the substrate is less than 45°.

[0035] Optionally, the first electrode lead includes at least one of a metal sub-wire and a transparent conductive sub-wire.

[0036] Optionally, the material of the first electrode is the same as the material of the transparent conductive sub-wire.

[0037] According to another aspect of the present invention, there is provided a light-emitting device, which includes the electroluminescent device provided in any embodiment of the present invention.

[0038] This embodiment provides an electroluminescent device, which includes a light-emitting region and a non-light-emitting region. The light-emitting region includes a plurality of spaced-apart light-emitting sub-regions. The non-light-emitting region includes a weak sub-region, which includes a plurality of first electrode leads, an insulating layer, and a second electrode. The first electrode leads in the weak sub-region are connected to the light-emitting sub-regions one by one. In order to enable the electroluminescent device to pass the anti-static test, this embodiment sets the product of the area of the vertical projection of a single first electrode lead on the second electrode and the dielectric constant of the material of the insulating layer to be greater than the static test threshold, thereby avoiding the problem of bright spots or dark spots appearing in the light-emitting sub-region due to electrostatic breakdown of the insulating layer. This embodiment provides an electroluminescent device that can improve the anti-static ability of the electroluminescent device without adding other anti-static circuits.

[0039] It should be understood that the content described in this part is not intended to identify the key or important features of the embodiments of the present invention, nor is it used to limit the scope of the present invention. Other features of the present invention will become easily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the drawings in the following description are only some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.

[0041] Figure 1 is a schematic structural diagram of an electroluminescent device provided according to an embodiment of the present invention;

[0042] Figure 2 is along Figure 1 The structural schematic diagram obtained by dissecting along the dissection line A1A2 in;

[0043] Figure 3 is along Figure 1 The structural schematic diagram obtained by dissecting along the dissection line B1B2 in;

[0044] Figure 4 is a schematic structural diagram of another electroluminescent device provided according to an embodiment of the present invention. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0045] In order to enable those skilled in the art to better understand the solutions of the present invention, the following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the drawings in the embodiments of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, rather than all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0046] It should be noted that the terms "first", "second", etc. in the description, claims and above-mentioned drawings of the present invention are used to distinguish similar objects, and do not necessarily describe a specific order or sequence. It should be understood that such data can be interchanged under appropriate circumstances so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "comprising" and "having" and any variations thereof are intended to cover non-exclusive inclusion. For example, a process, method, system, product or device comprising a series of steps or units does not necessarily limit to those clearly listed steps or units, but may include other steps or units not clearly listed or inherent to these processes, methods, products or devices.

[0047] Figure 1 is a schematic structural diagram of an electroluminescent device provided according to an embodiment of the present invention, Figure 2 is along Figure 1 the anatomical line A1A2 in Figure 1 and Figure 2 , the electroluminescent device provided in this embodiment includes: a substrate 110, the substrate 110 includes a non-light-emitting area 120 and a light-emitting area 130; the light-emitting area 130 includes a plurality of spaced-apart light-emitting sub-areas 131; the non-light-emitting area 120 includes a weak sub-area 121; the weak sub-area 121 includes a plurality of first electrode leads 10, an insulating layer 20 and a second electrode 30 located on one side of the substrate 110; the insulating layer 20 is located on the side of the first electrode lead 10 away from the substrate 110 and covers the first electrode lead 10; the second electrode 30 is located on the side of the insulating layer 20 away from the first electrode lead 10; the first electrode leads 10 are connected to the light-emitting sub-areas 131 in one-to-one correspondence; the product of the area of the vertical projection of a single first electrode lead 10 on the second electrode 30 and the dielectric constant of the material of the insulating layer 20 is greater than the electrostatic test threshold.

[0048] On the basis of the above embodiment, optionally, the relationship between the electrostatic test threshold T and the electrostatic standard capacitance C, the electrostatic standard voltage V, the process coefficient a and the maximum electric field strength E 最大 that the material of the insulating layer 20 can withstand is:

[0049]

[0050] Specifically, the first electrode lead 10 is used to transmit a driving signal to the light-emitting sub-region 131, and the driving signal is used to control the light-emitting brightness of the light-emitting sub-region 131. Different first electrode leads 10 can transmit different driving signals. The second electrode 30 is connected to each light-emitting sub-region 131, and the second electrode 30 is used to transmit a power signal to each light-emitting sub-region 131. The insulating layer 20 is used to prevent short-circuit problems caused by the electrical connection of the first electrode leads 10 to each other and the electrical connection of the first electrode leads 10 to the second electrode 30. The material of the insulating layer 20 can be an inorganic insulating material or an organic insulating material. The inorganic insulating material can include silicon oxide, and the organic insulating material can include at least one of phenolic resin, acrylic resin, and silicone.

[0051] A single first electrode lead 10, the insulating layer 20, and the second electrode 30 can be equivalent to a first capacitor. A single light-emitting sub-region 131 can be equivalent to a second capacitor. Compared with the second capacitor, the first capacitor has a weaker anti-static ability, that is, the first capacitor is more easily broken down by static electricity than the second capacitor. If the first capacitor in the weak sub-region 121 is broken down by static electricity, the light-emitting sub-region 131 connected to the first electrode lead 10 in the first capacitor may have problems such as bright spots or dark spots. Therefore, in order to improve the anti-static ability of the electroluminescent device, it is necessary to improve the anti-static ability of the weak sub-region 121. The anti-static ability can be judged by an anti-static test.

[0052] If the weak sub-region 121 passes the anti-static test, the light-emitting sub-region 131 can avoid problems such as bright spots or dark spots caused by static electricity. There are various types of anti-static tests, and the type of anti-static test is related to the static electricity generation mode.

[0053] Static electricity is usually evaluated by the amount of charge Q, where Q = CV, C is the static electricity standard capacitor, and V is the static electricity standard voltage. When the type of anti-static test is determined, the static electricity standard capacitor will be determined. For example, the static electricity standard capacitors in the human body mode and the mechanical mode are both 100 pF, and the static electricity standard voltage is determined according to the applied voltage level. The voltage levels can be 250V, 500V, 1kV, 2kV, 4kV, and 8kV, etc. Therefore, after the specific type of anti-static test is determined, the static electricity standard capacitor and the static electricity standard voltage will be determined. The anti-static ability of the weak sub-region 121 is related to the static electricity test threshold T. The static electricity test threshold T is related to the static electricity standard capacitor and the static electricity standard voltage, and is also related to the maximum electric field strength that the material of the insulating layer 20 can withstand. Different manufacturing processes for the weak sub-region 121 result in different surface roughnesses of the insulating layer 20, the surface roughness of the first electrode lead 10, and the surface roughness of the second electrode 30, etc. During the anti-static test, affected by the manufacturing process of the weak sub-region 121, the charge amount of the anti-static test is not all applied to the weak sub-region 121. Therefore, the static electricity test threshold T is also related to the process coefficient a, and the value of the process coefficient a can be 10-4 ~10 0 In summary, the electrostatic test threshold T can be E 最大 the maximum electric field strength that the material of the insulating layer 20 can withstand. The electric field strength E received by the material of the insulating layer 20 can be expressed as When the electric field strength E received by the material of the insulating layer 20 exceeds the maximum electric field strength that the material of the insulating layer 20 can withstand, the insulating layer 20 will be broken down, resulting in short - circuit or open - circuit problems.

[0054] If it is required that the weak sub - region 121 passes the electrostatic test, it is necessary that the product of the area of the vertical projection of each first electrode lead 10 in the first capacitor in the weak sub - region 121 on the second electrode 30 and the dielectric constant of the material of the insulating layer 20 is greater than the electrostatic test threshold T. Specifically, it can be

[0055]

[0056] where ε r is the dielectric constant of the material of the insulating layer 20, and S is the area of the vertical projection of a single first electrode lead 10 on the second electrode 30. The first capacitor is not broken down by static electricity, thereby avoiding the problems of bright spots or dark spots in the light - emitting sub - region 131 caused by static electricity. It can be seen that for the electroluminescent device provided in this embodiment, the dielectric constant of the material of the insulating layer 20 and the area of the vertical projection of the first electrode lead 10 on the second electrode 30 can be set according to the type of anti - static test, without adding other anti - static circuits to improve the anti - static ability of the electroluminescent device, thereby reducing the manufacturing cost of the electroluminescent device. Exemplarily, the material of the insulating layer 20 is silicon oxide, the process coefficient a is 10 - 4, the dielectric constant of silicon oxide is 3.97, the maximum electric field strength that the insulating layer 20 can withstand is 107 V / cm. If it is required to pass the JESD22 - A114 MM (mechanical mode) test, where the electrostatic standard capacitor C in this test mode is 100 pF and the electrostatic standard voltage V is 400 V, then the length and width of a single first electrode lead 10 in the weak sub - region can be set to 0.01 μm each.

[0057] It should be noted that different anti - static tests have different electrostatic test thresholds. In the actual manufacture of electroluminescent devices, the dielectric constant of the material of the insulating layer 20 and the area of the vertical projection of the first electrode lead 10 on the second electrode 30 can be designed according to the type of anti - static test.

[0058] This embodiment provides an electroluminescent device, which includes a light-emitting region and a non-light-emitting region. The light-emitting region includes a plurality of spaced-apart light-emitting sub-regions. The non-light-emitting region includes a weak sub-region, and the weak sub-region includes a plurality of first electrode leads, an insulating layer, and a second electrode. The first electrode leads in the weak sub-region are connected to the light-emitting sub-regions in a one-to-one correspondence. In order to enable the electroluminescent device to pass the anti-static test, this embodiment sets the product of the area of the vertical projection of a single first electrode lead on the second electrode and the dielectric constant of the material of the insulating layer to be greater than the static test threshold, thereby avoiding the problem that the insulating layer is electrostatically broken down and causing bright spots or dark spots to appear in the light-emitting sub-regions. This embodiment provides an electroluminescent device that can improve the anti-static ability of the electroluminescent device without adding other anti-static circuits.

[0059] Optionally, continue to refer to Figure 1 and Figure 2 , the second electrode 30 in the weak sub-region 121 extends into each light-emitting sub-region 131; each light-emitting sub-region 131 further includes a first electrode and a light-emitting functional layer; in the light-emitting sub-region 131, the first electrode is located on one side of the substrate 110, the light-emitting functional layer is located on the side of the first electrode away from the substrate 110, and the second electrode 30 is located on the side of the light-emitting functional layer away from the first electrode; the first electrode leads 10 are connected to the first electrodes in a one-to-one correspondence.

[0060] Specifically, the light-emitting functional layer may include a hole injection layer, a hole transport layer, a light-emitting layer, and an electron transport layer that are sequentially stacked. The first electrode may be a cathode or an anode, and the second electrode 30 may be a cathode or an anode. When the first electrode is an anode, the second electrode 30 is a cathode. The second electrodes 30 in the light-emitting sub-regions 131 may be interconnected.

[0061] Optionally, continue to refer to Figure 1 , the non-light-emitting region 120 further includes a lead transmission sub-region 122; the first electrode leads 10, the insulating layer 20, and the second electrode 30 in the weak sub-region 121 all extend into the lead transmission sub-region 122; the light-emitting functional layers in each light-emitting sub-region 131 all extend into the lead transmission sub-region 122; in the lead transmission sub-region 122, the insulating layer 20 is located on the side of the first electrode lead 10 away from the substrate 110; the light-emitting functional layer is located on the side of the insulating layer 20 away from the first electrode lead 10; the second electrode 30 is located on the side of the light-emitting functional layer away from the insulating layer 20; the first electrode leads 10 in the lead transmission sub-region 122 are connected to the first electrodes in a one-to-one correspondence.

[0062] Specifically, during the fabrication of the electroluminescent device, to improve the fabrication efficiency, the light-emitting functional layer is disposed on the lead transmission sub-region 122 in the light-emitting region 130 and the non-light-emitting region 120, without the need to distinguish the boundary between the light-emitting region 130 and the non-light-emitting region 120 during the fabrication of the light-emitting functional layer. The first electrode lead 10 in the weak sub-region 121 is connected to the first electrode in one-to-one correspondence through the first electrode lead 10 in the lead transmission sub-region 122. In the non-light-emitting region 120, the weak sub-region 121 and the lead transmission sub-region 122 are distinguished by the boundary of the light-emitting functional layer. No light-emitting functional layer is provided in the weak sub-region 121, which can improve the waterproof property of the weak sub-region.

[0063] Optionally, continuing to refer to Figure 1 , the non-light-emitting region 120 further includes a bonding sub-region 123; the weak sub-region 121 is located between the bonding sub-region 123 and the lead transmission sub-region 122; the first electrode lead 10 in the weak sub-region 121 extends into the bonding sub-region 123; the insulating layer 20 in the weak sub-region 121 extends into a part of the bonding sub-region 123; in the bonding sub-region 123, at least a part of each first electrode lead 10 is exposed.

[0064] Specifically, each exposed first electrode lead 10 in the bonding sub-region 123 is used to connect to an external driving circuit. The insulating layer 20 in the bonding sub-region 123 is used to prevent the external driving circuit from being electrically connected to the second electrode 30 during the bonding process. In the non-light-emitting region 120, the weak sub-region 121 and the bonding sub-region 123 are distinguished by the boundary of the second electrode 30.

[0065] Based on the above embodiments, optionally, the dielectric constant of the material of the insulating layer is greater than 3.

[0066] Specifically, when the dielectric constant of the material of the insulating layer is greater than 3, the area of the first electrode lead can be appropriately reduced, thereby reducing the area of the non-light-emitting region and improving the aperture ratio of the electroluminescent device. The dielectric constant of the material of the insulating layer being greater than 3 can improve the anti-static ability of the weak sub-region.

[0067] Optionally, continuing to refer to Figure 2 , the included angle between the side surface of the first electrode lead 10 and the surface of the first electrode lead 10 close to the substrate 110 is less than 45°.

[0068] Specifically, before forming the first electrode lead 10, it is necessary to first form a conductive layer, and then perform photolithography on the conductive layer to form a plurality of first electrode leads 10. During photolithography, burrs will appear at the edges of the first electrode leads 10. If the burrs at the edges penetrate into the insulating layer 20, static charges are likely to accumulate here, resulting in an excessive local electric field strength and thus breakdown of the insulating layer 20. Therefore, in order to prevent the burrs from penetrating into the insulating layer 20, the angle between the side surface of the first electrode lead 10 and the surface of the first electrode lead 10 close to the substrate 110 is reduced, so as to avoid excessive penetration of the burrs into the insulating layer 20 and reduce the accumulation of static charges in the insulating layer 20, further improving the anti-static ability of the weak sub-region.

[0069] Based on the above embodiments, optionally, Figure 3 is the structural schematic diagram obtained by dissecting along the anatomical line B1B2 in Figure 1 , and referring to Figure 3 , the thickness of the insulating layer 20 in the weak sub-region 121 is greater than or equal to the thickness of the insulating layer 20 in the lead transmission sub-region 122 and the thickness of the insulating layer 20 in the bonding sub-region 123.

[0070] Specifically, when the thickness of the insulating layer 20 in the weak sub-region 121 is greater than or equal to the thickness of the insulating layer 20 in the lead transmission sub-region 122, the anti-static ability of the lead transmission sub-region 122 is still stronger than that of the weak sub-region 121.

[0071] In the weak sub-region 121, when the thickness of the insulating layer 20 is relatively large, it is not easy for static charges accumulated in the burrs of the first electrode lead to breakdown the insulating layer 20. Therefore, increasing the thickness of the insulating layer 20 in the weak sub-region 121 can prevent the insulating layer 20 from being broken down due to the accumulation of static charges in the burrs of the first electrode lead 10.

[0072] It should be noted that Figure 3 exemplarily, the thickness of the insulating layer 20 in the weak sub-region 121 is drawn to be equal to the sum of the thickness of the insulating layer 20 in the lead transmission sub-region 122 and the thickness of the light-emitting functional layer 40, but this is not a limitation to the present invention. In practical applications, the relationship between the thickness of the insulating layer 20 in the weak sub-region 121 and the sum of the thickness of the insulating layer 20 in the lead transmission sub-region 122 and the thickness of the light-emitting functional layer 40 can be set according to requirements.

[0073] Based on the above embodiments, optionally, the dielectric constant of the insulating layer in the weak sub-region is greater than or equal to the dielectric constant of the insulating layer in the lead transmission sub-region and the dielectric constant of the insulating layer in the bonding sub-region.

[0074] Specifically, when the dielectric constant of the insulating layer in the weak sub-region is greater than that of the insulating layer in the lead transmission sub-region, the anti-static ability of the lead transmission sub-region is still stronger than that of the weak sub-region. Increasing the dielectric constant of the insulating layer in the weak sub-region can improve the anti-static ability of the weak sub-region.

[0075] Optionally, Figure 4 is a schematic structural diagram of another electroluminescent device provided according to an embodiment of the present invention. Refer to Figure 4 , the width of the first electrode lead 10 in the weak sub-region 121 is greater than or equal to the width of the first electrode lead 10 in the lead transmission sub-region 122 and the width of the first electrode lead 10 in the bonding sub-region 123.

[0076] Specifically, when the width of the first electrode lead 10 in the weak sub-region 121 is greater than the width of the first electrode lead 10 in the lead transmission sub-region 122, the anti-static ability of the lead transmission sub-region 122 is still stronger than that of the weak sub-region 121. Increasing the width of the first electrode lead 10 in the weak sub-region 121 can increase the area of the vertical projection of the first electrode lead 10 on the second electrode 30, thereby enhancing the anti-static ability of the weak sub-region 121.

[0077] Optionally, the first electrode lead includes at least one of a metal sub-wire and a transparent conductive sub-wire.

[0078] Specifically, the metal sub-wire has a higher conductivity, and the transparent conductive sub-wire has better corrosion resistance. When the first electrode lead includes a metal sub-wire and a transparent conductive sub-wire, both the conductivity of the first electrode lead and the corrosion resistance of the first electrode lead can be improved. The material of the metal sub-wire can be at least one of gold, silver, copper, and aluminum, etc. The material of the transparent conductive sub-wire can be ITO. When the first electrode lead includes a metal sub-wire and a transparent conductive sub-wire, the metal sub-wire and the transparent conductive sub-wire can be stacked.

[0079] Optionally, the material of the first electrode is the same as the material of the transparent conductive sub-wire.

[0080] Specifically, setting the material of the first electrode to be the same as the material of the transparent conductive sub-wire, the first electrode can be fabricated simultaneously with the transparent conductive sub-wire, thereby improving the fabrication efficiency of the electroluminescent device.

[0081] An embodiment of the present invention also provides a light-emitting device, which includes the electroluminescent device provided in any embodiment of the present invention.

[0082] Specifically, the light-emitting device provided in this embodiment can be a mobile phone, a smart watch, a tablet computer, or the like.

[0083] It should be understood that the various forms of processes shown above can be used, with steps reordered, added or deleted. For example, the steps recited in the present invention can be executed in parallel, sequentially or in a different order, as long as the desired results of the technical solution of the present invention can be achieved, and no limitation is imposed herein.

[0084] The above specific embodiments do not constitute a limitation on the protection scope of the present invention. Those skilled in the art should understand that various modifications, combinations, sub - combinations and substitutions can be made according to design requirements and other factors. Any modifications, equivalent substitutions and improvements made within the spirit and principle of the present invention shall be included within the protection scope of the present invention.

Claims

1. An electroluminescent device, characterized in that, comprising: a substrate, the substrate including a non-light-emitting region and a light-emitting region; the light-emitting region including a plurality of spaced-apart light-emitting sub-regions; the non-light-emitting region including a weak sub-region; the weak sub-region including a plurality of first electrode leads, an insulating layer, and a second electrode located on one side of the substrate; the insulating layer being located on a side of the first electrode leads away from the substrate and covering the first electrode leads; the second electrode being located on a side of the insulating layer away from the first electrode leads; the first electrode leads being connected to the light-emitting sub-regions in a one-to-one correspondence; the product of the area of the vertical projection of a single one of the first electrode leads on the second electrode and the dielectric constant of the material of the insulating layer being greater than an electrostatic test threshold; The static electricity test threshold, the static electricity standard capacitance C, the static electricity standard voltage V, the process coefficient a, and the maximum electric field strength E that the material of the insulating layer can withstand 最大 have the following relational expression: T being the electrostatic test threshold.

2. The electroluminescent device according to claim 1, characterized in that, the second electrode in the weak sub-region extends into each of the light-emitting sub-regions; each of the light-emitting sub-regions further including a first electrode and a light-emitting functional layer; in the light-emitting sub-region, the first electrode is located on one side of the substrate, the light-emitting functional layer is located on a side of the first electrode away from the substrate, and the second electrode is located on a side of the light-emitting functional layer away from the first electrode; the first electrode leads being connected to the first electrodes in a one-to-one correspondence.

3. The electroluminescent device according to claim 2, characterized in that, the non-light-emitting region further includes a lead transmission sub-region; the first electrode leads, the insulating layer, and the second electrode in the weak sub-region all extend into the lead transmission sub-region; the light-emitting functional layer in each of the light-emitting sub-regions extends into the lead transmission sub-region; in the lead transmission sub-region, the insulating layer is located on a side of the first electrode leads away from the substrate; the light-emitting functional layer is located on a side of the insulating layer away from the first electrode leads; the second electrode is located on a side of the light-emitting functional layer away from the insulating layer; the first electrode leads in the lead transmission sub-region being connected to the first electrodes in a one-to-one correspondence.

4. The electroluminescent device according to claim 3, characterized in that, the non-light-emitting region further includes a bonding sub-region; the weak sub-region being located between the bonding sub-region and the lead transmission sub-region; the first electrode leads in the weak sub-region extending into the bonding sub-region; the insulating layer in the weak sub-region extending into a part of the bonding sub-region; in the bonding sub-region, at least a part of each of the first electrode leads is exposed.

5. The electroluminescent device according to claim 1, characterized in that, the dielectric constant of the material of the insulating layer is greater than 3.

6. The electroluminescent device according to claim 4, characterized in that, the thickness of the insulating layer in the weak sub-region is greater than or equal to the thickness of the insulating layer in the lead transmission sub-region and the thickness of the insulating layer in the bonding sub-region; the dielectric constant of the insulating layer in the weak sub-region is greater than or equal to the dielectric constant of the insulating layer in the lead transmission sub-region and the dielectric constant of the insulating layer in the bonding sub-region.

7. The electroluminescent device according to claim 4, wherein, the width of the first electrode lead in the weak sub-region is greater than or equal to the width of the first electrode lead in the lead transmission sub-region and the width of the first electrode lead in the bonding sub-region.

8. The electroluminescent device according to claim 1, wherein, the angle between the side surface of the first electrode lead and the surface of the first electrode lead close to the substrate is less than 45°; the first electrode lead includes at least one of a metal sub-wire and a transparent conductive sub-wire; the material of the first electrode is the same as the material of the transparent conductive sub-wire.

9. A light-emitting device, wherein, it includes the electroluminescent device according to any one of claims 1-8.

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