Planar diaphragm assembly and preparation method thereof, and planar diaphragm loudspeaker

Abstract

The present invention provides a method for preparing a planar diaphragm assembly, comprising the following steps: forming a metal layer on one surface of a planar diaphragm body, wherein the thickness of the planar diaphragm body is 0.5 μm to 6 μm, and the thickness of the metal layer is 1 nm to 20 nm; forming a graphene oxide circuit on the metal layer by electrostatic spraying; etching the metal layer to form a metal circuit; and reducing the graphene oxide circuit to a reduced graphene oxide circuit to obtain a voice coil circuit, wherein the thickness of the reduced graphene oxide circuit is less than 50 nm. The present invention solves the contradiction that "ultra-thin thickness and electrical conductivity performance" cannot be improved at the same time in the existing voice coil circuit processing technology. The present invention also provides a planar diaphragm assembly and a planar diaphragm speaker.

Description

Technical Field

[0001] The present invention relates to the technical field of loudspeakers, and in particular to a planar diaphragm assembly and a preparation method thereof, and a planar diaphragm loudspeaker. Background Art

[0002] The sound-generating principle of the planar diaphragm speaker is to use electromagnetic force to convert energy to produce sound, that is, in a fixed magnetic field, the current of the voice coil circuit is controlled to generate a changing electromagnetic field, driving the planar diaphragm body to vibrate and produce sound. A magnet / magnetic group is set on one or both sides of the planar diaphragm body. When the voice coil circuit is connected to the alternating audio current, the voice coil circuit in the orthogonal magnetic field is acted on by the vertical electromagnetic force and drives the planar diaphragm body to vibrate and produce sound, generating sufficient thrust on the planar diaphragm body, thereby pushing the air to produce sound.

[0003] Based on the sound-generating principle and structure of planar diaphragm speakers, planar diaphragm speakers usually need to meet the following conditions: First, the voice coil circuit and the planar diaphragm body are required to have a thin thickness, light weight and high rigidity, so that the planar diaphragm body is not easily deformed and distorted under instantaneous vibration, and exhibits very high full-band resolution or sensitivity, fast response, and especially very good transient and high-frequency characteristics; second, the heat generated by the voice coil circuit is required to be easily dissipated to avoid the planar diaphragm body becoming soft and the vibration being unstable due to the heat of the voice coil circuit.

[0004] When preparing a planar diaphragm assembly in a planar diaphragm speaker, the prior art usually uses a process of silk screen printing, spraying or 3D printing to prepare a voice coil circuit on a planar diaphragm body, or a conductive film (such as aluminum foil, copper foil, etc.) is attached to the surface of the planar diaphragm body, and then the voice coil circuit is formed after etching. However, these processes are extremely difficult to process for an ultra-thin (i.e., less than 6μm thick) planar diaphragm body, and the thickness of the prepared voice coil circuit is at the micron level, which is difficult to meet the requirements of a thin and light planar diaphragm assembly.

[0005] In addition, when preparing a planar diaphragm assembly, the prior art also uses a magnetron sputtering coating process to form a conductive layer (such as a metal layer with a thickness of usually more than 500nm, or a conductive non-metallic graphene layer with amorphous graphite and extremely poor conductivity) on an ultra-thin (i.e., less than 6μm thick) planar diaphragm body, and then uses a laser etching process to process a spiral voice coil circuit. Due to the high temperature heating caused by magnetron sputtering coating and laser processing, it can barely adapt to planar diaphragm bodies with a thickness greater than 6μm, but for planar diaphragm bodies with a thickness less than 6μm, the yield of the voice coil circuit processed by this process is extremely low. Although the effect of heat on the planar diaphragm body can be alleviated by reducing the thickness of the sputtering coating and reducing the laser processing time, it causes the voice coil circuit to be too thin and the conductivity to decrease, affecting the electromagnetic force of the voice coil circuit and the sound performance of the planar diaphragm body. Summary of the invention

[0006] Based on this, it is necessary to provide a method for preparing a planar diaphragm assembly to solve the contradiction that "ultra-thin thickness and electrical conductivity performance" cannot be improved at the same time in the existing voice coil circuit processing technology.

[0007] In addition, it is also necessary to provide a planar diaphragm assembly prepared by the above preparation method.

[0008] In addition, it is also necessary to provide a planar diaphragm loudspeaker including the above-mentioned planar diaphragm assembly.

[0009] In one aspect, the present invention provides a method for preparing a planar diaphragm assembly, comprising the following steps:

[0010] Forming a metal layer on one surface of the planar diaphragm body, wherein the planar diaphragm body has a thickness of 0.5 μm to 6 μm, and the metal layer has a thickness of 1 nm to 20 nm;

[0011] forming a graphene oxide circuit on the metal layer by electrostatic spraying;

[0012] etching the metal layer to form a metal circuit on the metal layer; and

[0013] The graphene oxide circuit is reduced to a reduced graphene oxide circuit to obtain a voice coil circuit, wherein the thickness of the reduced graphene oxide circuit is less than 50 nm.

[0014] In some embodiments, forming the graphene oxide circuit on the metal layer by electrostatic spraying specifically includes the following steps:

[0015] Spraying the graphene oxide dispersion through a nozzle in an electrostatic spray device; and

[0016] The nozzle is controlled to move along the X-axis direction or the Y-axis direction so that the ejected graphene oxide dispersion falls on the metal layer to form the graphene oxide circuit.

[0017] In some embodiments, the preparation method further comprises the following steps:

[0018] Before forming the metal layer on one surface of the planar diaphragm body, the planar diaphragm body is subjected to plasma roughening treatment in a roll-to-roll manner.

[0019] In some embodiments, the metal layer is prepared by evaporation or sputtering, and the material of the metal layer includes at least one of copper, aluminum, aluminum-zinc alloy, nickel, silver and gold.

[0020] In some embodiments, the preparation method further comprises the following steps:

[0021] After the metal layer is formed on one surface of the planar diaphragm body and before the graphene oxide circuit is formed on the metal layer, another metal layer is formed on the other surface of the planar diaphragm body by evaporation or sputtering.

[0022] In some embodiments, the material of the reduced graphene oxide circuit includes at least two of silver nanowires, reduced graphene oxide and an adhesive.

[0023] In some embodiments, the preparation method further comprises the following steps:

[0024] After forming the graphene oxide circuit on the metal layer and before etching the metal layer, a graphene oxide film is formed on the other surface of the planar diaphragm body.

[0025] Another aspect of the present invention provides a planar diaphragm assembly prepared by the method for preparing the planar diaphragm assembly, wherein the electrical conductivity of the voice coil circuit is greater than or equal to 200 S / CM.

[0026] In some embodiments, the reduced graphene oxide circuit has a shape including at least one of a winding line, a concentric circle, and a spiral line.

[0027] In some embodiments, the planar diaphragm body includes an insulating film, and a material of the insulating film includes at least one of polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide and polypropylene.

[0028] In another aspect, the present invention provides a planar diaphragm loudspeaker, comprising a magnetic member. The planar diaphragm loudspeaker further comprises the planar diaphragm assembly, wherein the planar diaphragm assembly and the magnetic member are spaced apart from each other.

[0029] In some embodiments, the planar diaphragm speaker also includes a supporting member and a shell, the supporting member is provided with a receiving hole, the magnetic member is located in the receiving hole, the magnetic member, the planar diaphragm assembly and the shell are all located on the same side of the supporting member, and the planar diaphragm assembly is located between the magnetic member and the shell, and the shell covers the planar diaphragm assembly.

[0030] The present invention forms the metal layer with a thickness of 1nm to 20nm on the ultra-thin planar diaphragm body with a thickness of 0.5μm to 6μm, and prepares the reduced graphene oxide circuit with a thickness of less than 50nm on the metal layer by electrostatic spraying, thereby preparing the voice coil circuit. Since the metal circuit and the reduced graphene oxide circuit prepared from the metal layer both have an ultra-thin thickness, and the metal circuit and the reduced graphene oxide circuit both have a high electrical conductivity, the contradiction that "ultra-thin thickness and electrical conductivity performance" in the existing voice coil circuit processing technology cannot be improved at the same time is solved. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 A cross-sectional view of a planar diaphragm body provided in the first embodiment of the present invention;

[0032] Figure 2 For Figure 1 A cross-sectional view of a planar diaphragm body after a metal layer is formed on one surface thereof;

[0033] Figure 3 For Figure 2 A cross-sectional view of a metal layer after graphene oxide circuits are formed;

[0034] Figure 4 It is a schematic diagram of forming a graphene oxide circuit by electrostatic spraying in the present invention;

[0035] Figure 5 For the general Figure 3 A cross-sectional view of the metal layer after etching is shown;

[0036] Figure 6 For the general Figure 5 A cross-sectional view of a planar diaphragm assembly obtained after reduction of the graphene oxide circuit shown;

[0037] Figure 7 A cross-sectional view of a planar diaphragm assembly provided in accordance with a second embodiment of the present invention;

[0038] Figure 8 A cross-sectional view of a planar diaphragm assembly provided in a third embodiment of the present invention;

[0039] Fig. 9A cross-sectional view of a planar diaphragm loudspeaker provided in accordance with a first embodiment of the present invention;

[0040] Fig.10 A cross-sectional view of a planar diaphragm loudspeaker provided in accordance with a second embodiment of the present invention;

[0041] Fig.11 A cross-sectional view of a planar diaphragm loudspeaker provided in accordance with a third embodiment of the present invention.

[0042] Icons: 10-planar diaphragm body; 20, 210-metal layer; 30-graphene oxide circuit; 40-needle; 41-nozzle; 50-metal circuit; 60, 61-reduced graphene oxide circuit; 70, 71-voice coil circuit; 100, 200, 300-planar diaphragm assembly; 310-reduced graphene oxide membrane; 400, 500, 600-planar diaphragm speaker; 410-support; 420-magnetic part; 430-housing; 440-gasket. DETAILED DESCRIPTION

[0043] In order to facilitate the understanding of the present invention, the present invention will be described more fully below with reference to the relevant drawings. The preferred embodiments of the present invention are given in the drawings. However, the present invention can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the understanding of the disclosure of the present invention more thorough and comprehensive.

[0044] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those generally understood by those skilled in the art of the present invention. The terms used herein in the specification of the present invention are only for the purpose of describing specific embodiments and are not intended to limit the present invention. The term "and / or" used herein includes any and all combinations of one or more related listed items.

[0045] A first embodiment of the present invention provides a method for preparing a planar diaphragm assembly, comprising the following steps:

[0046] Step S11, please refer to Figure 1 , the planar diaphragm body 10 is subjected to plasma roughening treatment.

[0047] Specifically, the planar diaphragm body 10 may be subjected to plasma roughening treatment in a roll-to-roll manner to improve the subsequent metal layer (see Figure 2 ) and the bonding force between the planar diaphragm body 10.

[0048] In one embodiment, the thickness of the planar diaphragm body 10 is 0.5 μm to 6 μm. In one embodiment, the planar diaphragm body 10 includes an insulating film. In one embodiment, the material of the insulating film includes at least one of polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyphenylene sulfide (PPS) and polypropylene (PP).

[0049] Step S12, please refer to Figure 2 , a metal layer 20 is formed on one surface of the planar diaphragm body 10 after processing.

[0050] Specifically, the metal layer 20 may be formed on one surface of the planar diaphragm body 10 by evaporation or sputtering, wherein one surface of the planar diaphragm body 10 is completely covered by the metal layer 20 .

[0051] In one embodiment, the thickness of the metal layer 20 is 1 nm to 20 nm. In one embodiment, the material of the metal layer 20 is at least one of copper, aluminum, aluminum-zinc alloy, nickel, silver and gold.

[0052] Step S13, please refer to Figure 3 and Figure 4 , a graphene oxide circuit 30 is formed on the metal layer 20 by electrostatic spraying.

[0053] Specifically, a graphene oxide dispersion is prepared, and the graphene oxide dispersion is sprayed out through the nozzle 41 of the needle 40 in the electrostatic spray device. Under the action of a strong external electric field and a Maxwell stress perpendicular to and tangential to the graphene oxide dispersion, the shape of the sprayed graphene oxide dispersion changes to an inverted cone (also known as a Taylor cone). The jet drawn from the tip of the inverted cone-shaped graphene oxide dispersion will automatically split into relatively uniform graphene oxide droplets under the action of surface tension. The graphene oxide droplets fall on the metal layer 20 to form the graphene oxide circuit 30 with a relatively uniform thickness. By adjusting the flow rate of the graphene oxide dispersion sprayed out by the electrostatic spray device, the temperature of the metal layer 20, and the distance between the nozzle 41 and the metal layer 20, it can be determined whether a layer of dry graphene oxide circuit 30 or a wet graphene oxide circuit 30 is formed when the graphene oxide droplets contact the metal layer 20. If a wet graphene oxide circuit 30 is formed, a dry graphene oxide circuit 30 can be obtained after drying.

[0054] In one embodiment, the nozzle 41 in the electrostatic spray device is controlled to move along the X-axis direction or along the Y-axis direction to selectively cover or prepare the graphene oxide circuit 30 on the metal layer 20, thereby obtaining the patterned graphene oxide circuit 30.

[0055] In one embodiment, the shape of the graphene oxide circuit 30 includes at least one of a winding line, a concentric circle, a nearly concentric circle, and a spiral line.

[0056] In one embodiment, the thickness of the graphene oxide circuit 30 is less than 50 nm.

[0057] Step S14, please refer to Figure 5 , etching the metal layer 20 to form a metal line 50 on the metal layer 20 .

[0058] Specifically, the metal layer 20 is etched with an etching liquid to form the metal line 50. In one embodiment, the etching liquid can be a chemical etching liquid such as HCl, H2O2, H2SO4, HNO3, FeCl3, etc., or a combination of several of them.

[0059] It can be understood that, since the thickness of the metal layer 20 is 1 nm to 20 nm, the thickness of the metal line 50 obtained by etching the metal layer 20 is also 1 nm to 20 nm.

[0060] Step S15, please refer to Figure 6 , the graphene oxide circuit 30 is reduced to a reduced graphene oxide circuit 60 to obtain a voice coil circuit 70, thereby obtaining a planar diaphragm assembly 100.

[0061] Specifically, the graphene oxide circuit 30 is immersed in a reducing solution to reduce the graphene oxide circuit 30 to the reduced graphene oxide circuit 60, thereby obtaining the voice coil circuit 70 and thus obtaining the planar diaphragm assembly 100. In one embodiment, the reducing solution may be hydroiodic acid (HI).

[0062] It can be understood that since the shape of the graphene oxide circuit 30 includes at least one of a tortuous line, a concentric circle, an approximately concentric circle and a spiral line, the shape of the reduced graphene oxide circuit 60 obtained by reducing the graphene oxide circuit 30 also includes at least one of a tortuous line, a concentric circle, an approximately concentric circle and a spiral line.

[0063] Similarly, since the thickness of the graphene oxide circuit 30 is less than 50 nm, the thickness of the reduced graphene oxide circuit 60 obtained by reducing the graphene oxide circuit 30 is also less than 50 nm.

[0064] Among them, since the reduced graphene oxide circuit 60 has better conductivity than the graphene oxide circuit 30 , reducing the graphene oxide circuit 30 can improve the conductivity of the planar diaphragm assembly 100 .

[0065] In one embodiment, the conductivity of the voice coil circuit 70 is greater than or equal to 200 S / CM.

[0066] See also Figure 7 The second embodiment of the present invention provides a method for preparing a planar diaphragm assembly. The difference between the method for preparing a planar diaphragm provided by the second embodiment and the method for preparing a planar diaphragm provided by the first embodiment is that:

[0067] After step S12 and before step S13, another metal layer 210 is formed on the other surface of the planar diaphragm body 10, and the metal layer 210 is not etched, and finally a planar diaphragm assembly 200 is obtained. That is, during etching in step S14, only the metal layer 20 located on the same side of the planar diaphragm body 10 as the graphene oxide circuit 30 is etched, and the metal layer 210 located on the other side of the planar diaphragm body 10 is protected from being etched by attaching a peelable film on the metal layer 210.

[0068] See also Figure 8 The third embodiment of the present invention provides a method for preparing a planar diaphragm assembly. The difference between the method for preparing a planar diaphragm provided by the third embodiment and the method for preparing a planar diaphragm provided by the first embodiment is that:

[0069] In step S13, the graphene oxide dispersion is configured to include not only graphene oxide but also silver nanowires and adhesives, and the diameter of the silver nanowires ranges from a dozen nanometers to tens of micrometers; accordingly, in step S15, a reduced graphene oxide circuit 61 is obtained after reduction, thereby obtaining a voice coil circuit 71; after step S13 and before step S14, a graphene oxide film (not shown) is formed on the other surface of the planar diaphragm body 10 by spin coating, and in step S15, the graphene oxide film is also reduced to a reduced graphene oxide film 310, and finally a planar diaphragm assembly 300 is obtained.

[0070] See also Figure 6 The first embodiment of the present invention further provides a planar diaphragm assembly 100 prepared by the preparation method in the first embodiment. The planar diaphragm assembly 100 includes a planar diaphragm body 10 and a voice coil circuit 70 located on one surface of the planar diaphragm body 10 .

[0071] In one embodiment, the thickness of the planar diaphragm body 10 is 0.5 μm to 6 μm. In one embodiment, the planar diaphragm body 10 includes an insulating film. In one embodiment, the material of the insulating film includes at least one of polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyphenylene sulfide (PPS) and polypropylene (PP).

[0072] In one embodiment, the voice coil circuit 70 includes a metal circuit 50 and a reduced graphene oxide circuit 60 sequentially stacked on the planar diaphragm body 10 .

[0073] In one embodiment, the thickness of the metal line 50 is 1 nm to 20 nm. In one embodiment, the material of the metal line 50 is at least one of copper, aluminum, aluminum-zinc alloy, nickel, silver and gold.

[0074] In one embodiment, the reduced graphene oxide circuit 60 has a shape including at least one of a winding line, a concentric circle, a nearly concentric circle, and a spiral line. In one embodiment, the reduced graphene oxide circuit 60 has a thickness less than 50 nm.

[0075] In one embodiment, the conductivity of the voice coil circuit 70 is greater than or equal to 200 S / CM.

[0076] See also Figure 7 The second embodiment of the present invention further provides a planar diaphragm assembly 200 prepared by the preparation method in the second embodiment. The difference between the planar diaphragm assembly 200 provided by the second embodiment and the planar diaphragm assembly 100 provided by the first embodiment is that:

[0077] The planar diaphragm assembly 200 further includes a metal layer 210, and the metal layer 210 is located on the other surface of the planar diaphragm body 10. That is, the metal layer 210 and the voice coil circuit 70 are located on two opposite surfaces of the planar diaphragm body 10, respectively.

[0078] See also Figure 8 The third embodiment of the present invention further provides a planar diaphragm assembly 300 prepared by the preparation method in the third embodiment. The difference between the planar diaphragm assembly 300 provided by the third embodiment and the planar diaphragm assembly 100 provided by the first embodiment is that:

[0079] The planar diaphragm assembly 300 includes a voice coil circuit 71, and the voice coil circuit 71 includes not only the metal circuit 50, but also a reduced graphene oxide circuit 61. The material of the reduced graphene oxide circuit 61 includes not only reduced graphene oxide, but also silver nanowires and adhesives, and the diameter of the silver nanowires ranges from more than ten nanometers to tens of micrometers. In addition, the planar diaphragm assembly 300 also includes a reduced graphene oxide film 310, and the reduced graphene oxide film 310 is located on the other surface of the planar diaphragm body 10. That is, the reduced graphene oxide film 310 and the voice coil circuit 71 are respectively located on the two opposite surfaces of the planar diaphragm body 10.

[0080] See also Fig. 9 The first embodiment of the present invention further provides a planar diaphragm loudspeaker 400 , which includes the planar diaphragm assembly 100 , a support member 410 , a magnetic member 420 , a housing 430 and a gasket 440 .

[0081] In one embodiment, a receiving hole (not shown) is disposed on the support member 410 , wherein the support member 410 is used to receive the magnetic member 420 .

[0082] In one embodiment, the magnetic member 420 is received in the receiving hole so that the magnetic member 420 is fixed on the support member 410. In one embodiment, the magnetic member 420 can be a magnet or a magnetic group. The magnetic member 420 can generate a magnetic field so that the planar diaphragm assembly 100 is subjected to a magnetic force.

[0083] The planar diaphragm assembly 100 and the magnetic member 420 are located on the same side of the support member 410. When the voice coil circuit 70 in the planar diaphragm assembly 100 is connected to an alternating audio current, the voice coil circuit 70 in the orthogonal magnetic field is acted upon by a vertical electromagnetic force and drives the planar diaphragm body 10 to vibrate and generate sound, generating sufficient thrust on the planar diaphragm body 10, thereby pushing the air to generate sound.

[0084] The housing 430 and the planar diaphragm assembly 100 are located on the same side of the support member 410, and the planar diaphragm assembly 100 is located between the housing 430 and the support member 410. The housing 430 is disposed on the planar diaphragm assembly 100 to protect the planar diaphragm assembly 100, thereby preventing the planar diaphragm assembly 100 from being damaged by the outside and contaminated by dust from the outside.

[0085] In this embodiment, there are four gaskets 440 , two of which are located between the planar diaphragm assembly 100 and the housing 430 to isolate the planar diaphragm assembly 100 from the housing 430 ; and the other two gaskets 440 are located between the planar diaphragm assembly 100 and the magnetic member 420 to isolate the planar diaphragm assembly 100 from the magnetic member 420 .

[0086] In one embodiment, the planar diaphragm speaker 400 can be used in headphones, car audio, etc.

[0087] See also Fig.10 The second embodiment of the present invention further provides a planar diaphragm loudspeaker 500. The difference between the planar diaphragm loudspeaker 500 provided in the second embodiment and the planar diaphragm loudspeaker 400 provided in the first embodiment is that:

[0088] The planar diaphragm loudspeaker 500 does not include the planar diaphragm assembly 100 but includes the planar diaphragm assembly 200 . That is, the planar diaphragm assembly 100 is replaced by the planar diaphragm assembly 200 .

[0089] See also Fig.11 The third embodiment of the present invention further provides a planar diaphragm loudspeaker 600. The difference between the planar diaphragm loudspeaker 600 provided in the third embodiment and the planar diaphragm loudspeaker 400 provided in the first embodiment is that:

[0090] The planar diaphragm loudspeaker 600 does not include the planar diaphragm assembly 100 but includes the planar diaphragm assembly 300 , that is, the planar diaphragm assembly 100 is replaced by the planar diaphragm assembly 300 .

[0091] The present invention has the following beneficial effects:

[0092] First, the present invention forms the metal layer 20 with a thickness of 1nm to 20nm on the ultra-thin planar diaphragm body 10 with a thickness of 0.5μm to 6μm, and prepares the reduced graphene oxide circuit 60 with a thickness of less than 50nm on the metal layer 20 by electrostatic spraying, thereby preparing the voice coil circuit 70. Since the metal circuit 50 and the reduced graphene oxide circuit 60 prepared by the metal layer 20 both have an ultra-thin thickness, and the metal circuit 50 and the reduced graphene oxide circuit 60 both have a high electrical conductivity, the contradiction that "ultra-thin thickness and electrical conductivity performance" in the existing voice coil circuit processing process cannot be improved at the same time is solved.

[0093] Secondly, the planar diaphragm body 10 of the present invention has a thinner thickness (i.e., a thickness of 0.5 μm to 6 μm), a lighter mass, and a higher rigidity, and the preparation method of the present invention has a lower thermal impact on the planar diaphragm body 10, so that the planar diaphragm body 10 has a higher yield. At the same time, the planar diaphragm body 10 of the present invention is not easy to deform or distort when making sounds, and exhibits very high full-band resolution or sensitivity, fast response, and especially very good transient and low-frequency and high-frequency characteristics.

[0094] Finally, the reduced graphene oxide circuit 60 in the voice coil circuit 70 of the present invention has better thermal conductivity. When the voice coil circuit 70 is connected to the current to make a sound, the heat generated by the voice coil circuit 70 is easily dissipated, thereby reducing the problem of the planar diaphragm body 10 becoming soft and the vibration being unstable due to the heat of the voice coil circuit 70.

[0095] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0096] The above-mentioned embodiments only express several implementation methods of the present invention, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the invention patent. It should be pointed out that, for ordinary technicians in this field, several variations and improvements can be made without departing from the concept of the present invention, and these all belong to the protection scope of the present invention. Therefore, the protection scope of the patent of the present invention shall be subject to the attached claims.

Claims

1. A method for preparing a planar diaphragm assembly, characterized in that: The following steps are involved: Forming a metal layer on one surface of the planar diaphragm body, wherein the thickness of the planar diaphragm body is 0.5 μm to 6 μm, and the thickness of the metal layer is 1 nm to 20 nm; forming a graphene oxide circuit on the metal layer by electrostatic spraying; Etching the metal layer to form a metal circuit; and The graphene oxide circuit is reduced to a reduced graphene oxide circuit to obtain a voice coil circuit, wherein the thickness of the reduced graphene oxide circuit is less than 50 nm.

2. The method for preparing a planar diaphragm assembly according to claim 1, characterized in that: Forming the graphene oxide circuit on the metal layer by electrostatic spraying specifically includes the following steps: Spraying the graphene oxide dispersion through a nozzle in an electrostatic spray device; and The nozzle is controlled to move along the X-axis direction or the Y-axis direction so that the ejected graphene oxide dispersion falls on the metal layer to form the graphene oxide circuit.

3. The method for preparing a planar diaphragm assembly according to claim 1, characterized in that: The preparation method further comprises the following steps: Before forming the metal layer on one surface of the planar diaphragm body, the planar diaphragm body is subjected to plasma roughening treatment in a roll-to-roll manner.

4. The method for preparing a planar diaphragm assembly according to claim 1, characterized in that: The metal layer is prepared by evaporation or sputtering, and the material of the metal layer includes at least one of copper, aluminum, aluminum-zinc alloy, nickel, silver and gold.

5. The method for preparing a planar diaphragm assembly according to any one of claims 1 to 4, characterized in that: The preparation method further comprises the following steps: After the metal layer is formed on one surface of the planar diaphragm body and before the graphene oxide circuit is formed on the metal layer, another metal layer is formed on the other surface of the planar diaphragm body by evaporation or sputtering.

6. The method for preparing a planar diaphragm assembly according to any one of claims 1 to 4, characterized in that: The material of the reduced graphene oxide circuit includes at least two of silver nanowires, reduced graphene oxide and an adhesive.

7. The method for preparing a planar diaphragm assembly according to claim 6, characterized in that: The preparation method further comprises the following steps: After forming the graphene oxide circuit on the metal layer and before etching the metal layer, a graphene oxide film is formed on the other surface of the planar diaphragm body.

8. A planar diaphragm assembly prepared by the method for preparing a planar diaphragm assembly according to any one of claims 1 to 7, characterized in that: The electrical conductivity of the voice coil circuit is greater than or equal to 200 S / CM.

9. The planar diaphragm assembly according to claim 8, characterized in that: The shape of the reduced graphene oxide circuit includes at least one of a winding line, a concentric circle and a spiral line.

10. The planar diaphragm assembly according to claim 8, characterized in that: The planar diaphragm body includes an insulating film, and the material of the insulating film includes at least one of polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide and polypropylene.

11. A planar diaphragm loudspeaker, comprising a magnetic member, characterized in that: The planar diaphragm loudspeaker further comprises a planar diaphragm assembly as claimed in any one of claims 8 to 10, wherein the planar diaphragm assembly and the magnetic member are arranged apart from each other.

12. The planar diaphragm loudspeaker according to claim 11, characterized in that: The planar diaphragm speaker also includes a support member and a shell. The support member is provided with a receiving hole. The magnetic member is located in the receiving hole. The magnetic member, the planar diaphragm assembly and the shell are all located on the same side of the support member, and the planar diaphragm assembly is located between the magnetic member and the shell. The shell covers the planar diaphragm assembly.

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