Color conversion structure, display device, and method of manufacturing the display device

Abstract

Disclosed are color conversion structures, display devices, and methods of manufacturing the display devices. The color conversion structures have a transferable film structure that includes a substrate layer and a quantum dot layer provided on the substrate layer.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to a color conversion structure configured to be transferred to a display substrate, a display apparatus, and a method of manufacturing the display apparatus. BACKGROUND

[0002] Liquid crystal displays (LCDs) and organic light emitting diode (OLED) displays are widely used as display apparatuses. Recently, there is increasing interest in a technology of manufacturing a high-resolution display apparatus using a micro semiconductor light emitting device.

[0003] A display using a micro semiconductor light emitting device requires many technologies such as a technology for transferring a micro-sized light emitting diode to a display pixel position, a technology for repairing a micro-sized light emitting diode, and a method of realizing a desired color. SUMMARY

[0004] A color conversion structure configured to be transferred to a display substrate is provided.

[0005] A display apparatus is provided, each display apparatus including a color conversion structure configured to be transferred to a display substrate.

[0006] A method of manufacturing a display apparatus by transferring a color conversion structure to a display substrate is provided.

[0007] Additional aspects will be set forth in part in the description which follows, and in part will become apparent to those skilled in the art upon examination of the following description, or can be learned by practice of the presented embodiments of the disclosure.

[0008] According to an aspect of the present disclosure, a color conversion structure includes a base layer and a quantum dot layer provided on the base layer.

[0009] The quantum dot layer can include a porous layer and a plurality of quantum dots embedded in the porous layer.

[0010] The porous layer can include n-GaN.

[0011] The base layer can have a first width equal to a second width of the quantum dot layer.

[0012] The color conversion structure can further include a protective layer surrounding the quantum dot layer.

[0013] The color conversion structure can further include a protrusion provided on an edge of the protective layer.

[0014] The color conversion structure can further include a protrusion provided on the quantum dot layer.

[0015] The quantum dot layer can include a first surface facing the base layer, a second surface opposite the first surface, and a third surface forming a side surface between the first surface and the second surface, and the protrusion can be provided in an area corresponding to an edge of the second surface of the quantum dot layer or in an area corresponding to the edge of the second surface of the quantum dot layer and the third surface.

[0016] The quantum dot layer can include a first surface facing the base layer and a second surface opposite the first surface, and the protrusion can include a pattern provided in an area corresponding to the second surface.

[0017] The base layer can include SiO2, SiN, or GaN.

[0018] According to another aspect of the disclosure, a display device is provided, including a display substrate, a plurality of barrier ribs provided on the display substrate and spaced apart from each other, a micro semiconductor light emitting device provided in a recess defined by adjacent barrier ribs among the plurality of barrier ribs, and a color conversion structure provided on the micro semiconductor light emitting device, the color conversion structure including a base layer and a quantum dot layer provided on the base layer.

[0019] The recess can include a first recess, a second recess, and a third recess, and the first recess, the second recess, and the third recess can have different cross-sectional shapes from each other or different cross-sectional sizes from each other.

[0020] The color conversion structure can be spaced apart from the barrier rib by a gap between the color conversion structure and the barrier rib.

[0021] The base layer can be disposed toward the micro semiconductor light emitting device.

[0022] The micro semiconductor light emitting device can include a micro light emitting diode or an organic light emitting diode.

[0023] According to another aspect of the disclosure, a method of manufacturing a display device is provided, including forming a first layer on a substrate, forming base layers spaced apart from each other by etching the first layer, forming a quantum dot layer on the base layers, separating a plurality of color conversion structures from each other by removing the first substrate, each of the plurality of color conversion structures including one of the base layers and one of the quantum dot layers, forming a plurality of barrier ribs on the display substrate, transferring a plurality of micro semiconductor light emitting devices into a plurality of recesses defined by the plurality of barrier ribs, and transferring the color conversion structures onto the plurality of micro semiconductor light emitting devices in the recesses.

[0024] According to another aspect of this disclosure, a color conversion structure is provided, the color conversion structure comprising: a quantum dot layer; a substrate layer provided on the quantum dot layer, the substrate layer being configured to separate the quantum dot layer from a micro-semiconductor light-emitting device; a protective layer surrounding the quantum dot layer; and protrusions provided on the quantum dot layer. Attached Figure Description

[0025] The above and other aspects, features and advantages of certain embodiments of the present disclosure will become more apparent from the following description taken in conjunction with the accompanying drawings, in which:

[0026] Figure 1 This is a schematic cross-sectional view illustrating a color conversion structure according to an example embodiment;

[0027] Figure 2 This is a schematic cross-sectional view illustrating a color conversion structure according to another exemplary embodiment;

[0028] Figure 3 This is a schematic cross-sectional view illustrating a color conversion structure according to another exemplary embodiment;

[0029] Figure 4 This is a schematic cross-sectional view illustrating a color conversion structure according to another exemplary embodiment;

[0030] Figure 5 This is a schematic top view showing a display device according to an example embodiment;

[0031] Figure 6 It is along Figure 5 A sectional view taken by line AA;

[0032] Figure 7 It is shown Figure 6 Top view of the structure shown;

[0033] Figure 8 It is shown that Figure 6 The display device shown further includes an example view of a cover layer and a reflective layer;

[0034] Figures 9 to 14 This is a view illustrating a method for manufacturing a color conversion structure according to an example embodiment;

[0035] Figure 15 and Figure 16 This is a view illustrating a method for manufacturing a color conversion structure according to another exemplary embodiment;

[0036] Figure 17 and Figure 18 This is a view illustrating a method for manufacturing a color conversion structure according to another exemplary embodiment;

[0037] Figures 19 to 24 This is a view illustrating a method for manufacturing a color conversion structure according to another exemplary embodiment;

[0038] Figures 25 to 27 This is a view illustrating a method of manufacturing a display device according to an example embodiment;

[0039] Figure 28 This is a view illustrating a method for fluid self-assembly of a color conversion structure when manufacturing a display device, according to an example embodiment;

[0040] Figure 29 This is a schematic block diagram illustrating an electronic device according to an example embodiment;

[0041] Figure 30 This is a view illustrating an example of a display device applied to a mobile device according to an exemplary embodiment;

[0042] Figure 31 This is a view illustrating an example of a display device applied to a vehicle display device according to an exemplary embodiment;

[0043] Figure 32 This is a view illustrating an example of a display device applied to augmented reality glasses according to an exemplary embodiment;

[0044] Figure 33 This is a view illustrating an example of a display device applied to a sign according to an exemplary embodiment; and

[0045] Figure 34 This is a view illustrating an example of a display device applied to a wearable display according to an exemplary embodiment. Detailed Implementation

[0046] The embodiments will now be described in detail, examples of which are shown in the accompanying drawings, wherein the same reference numerals always refer to the same elements. In this respect, the exemplary embodiments may take different forms and should not be construed as limited to the description set forth herein. Therefore, the embodiments are described below only with reference to the accompanying drawings to illustrate various aspects. As used herein, the term “and / or” includes any and all combinations of one or more related listed items. Expressions such as “at least one of…”, when following a column of elements, modify the entire column of elements, rather than individual elements within that column.

[0047] The following description, with reference to the accompanying drawings, outlines a color conversion structure, a display device, and a method for manufacturing the display device according to various embodiments. In the drawings, the same reference numerals refer to the same elements, and the dimensions of each element may be enlarged for clarity. It will be understood that although the terms "first," "second," etc., may be used herein to describe various components, these components should not be limited by these terms. These terms are used only to distinguish one element from another.

[0048] As used herein, the singular form may also include the plural form unless the context clearly indicates otherwise. It will also be understood that the terms “comprising,” “including,” “including,” and / or “containing” as used herein indicate the presence of the stated feature or element, but do not exclude the presence or addition of one or more other features or elements. In the accompanying drawings, the dimensions or thickness of each element may be enlarged for clarity of illustration. Furthermore, it will be understood that when a material layer is referred to as being “on” or “above” a substrate or another layer, it may be directly on the substrate or another layer, or an intervening layer may be present. Moreover, in the following embodiments, the material included in each layer is exemplary, and other materials may be used in addition to or in place of that material.

[0049] In this disclosure, terms such as “unit” or “module” may be used to refer to a unit having at least one function or operation and implemented in hardware, software or a combination of hardware and software.

[0050] The specific implementations described herein are merely examples and do not limit the scope of the inventive concept in any way. For simplicity of description, conventional electronic configurations, control systems, software, and other functional aspects of the system may be omitted. Furthermore, the wiring connections or connecting components between elements illustrated in the figures represent functional connections and / or physical or circuit connections by way of example, and in practical applications, they may be replaced or embodied as various additional functional connections, physical connections, or circuit connections.

[0051] An element referred to by a definite article or demonstrative pronoun can be interpreted as one or more elements, even if it has a singular form.

[0052] The operations of a method may be performed in a suitable order unless explicitly described or otherwise. Furthermore, exemplary or illustrative terms (e.g., “such as” and “etc.”) are used for descriptive purposes and are not intended to limit the scope of the inventive concept, unless defined by the claims.

[0053] Figure 1 This is a view showing a color conversion structure 100 according to an example embodiment.

[0054] The color conversion structure 100 may include a substrate layer 110 and a quantum dot layer 120 provided on the substrate layer 110. The substrate layer 110 may include, for example, SiO2, SiN, or GaN. Alternatively, the substrate layer 110 may include the same material as the quantum dot layer 120. The substrate layer 110 may have the function of separating the quantum dot layer 120 from the micro-semiconductor light-emitting device (described later) to prevent direct contact between the quantum dot layer 120 and the micro-semiconductor light-emitting device. Furthermore, the substrate layer 110 may have a film shape for transferring the quantum dot layer 120. The substrate layer 110 may have the same width (w) as the quantum dot layer 120. Since the color conversion structure 100 formed by arranging the quantum dot layer 120 on the substrate layer 110 is separated into transferable units, the substrate layer 110 and the quantum dot layer 120 may have the same width (w). For example, the width (w) may be greater than about 0 μm and may be equal to or less than about 300 μm. However, depending on the method of manufacturing the color conversion structure 100, the quantum dot layer 120 and the substrate layer 110 may have different widths, according to various example implementations.

[0055] The quantum dot layer 120 may include quantum dots. Quantum dots can be inorganic material particles, each having a size of several nanometers (nm) and a band gap corresponding to a specific wavelength, such that when a quantum dot absorbs light with energy greater than its band gap, it can emit light of different wavelengths. Quantum dots have a narrow emission wavelength band, thus improving the color reproduction of the display. However, when quantum dots are in direct contact with a light source (ultraviolet (UV) or blue light-emitting diode (LED)), they can be very unstable and have poor color efficiency. The properties of quantum dots can deteriorate significantly when exposed to strong light or thermal shock. That is, quantum dots function normally when separated from the light source by a specific distance. The quantum dot layer 120 can be separated from the light source (described later) by the substrate layer 110. Therefore, degradation of the quantum dot layer 120 due to light from the light source can be prevented.

[0056] The quantum dot layer 120 can be, for example, a film in which quantum dots are distributed in a photoresist. The quantum dots can have a core-shell structure with a core and a shell, or they can have a particulate structure without a shell. The core-shell structure can be a single-shell structure or a multi-shell structure (such as a double-shell structure).

[0057] Quantum dots can include group II-VI semiconductor materials, group III-V semiconductor materials, group IV-VI semiconductor materials, group IV semiconductor materials, and / or graphene quantum dots. Quantum dots can include, for example, cadmium (Cd), selenium (Se), zinc (Zn), sulfur (S), and / or InP, and each quantum dot can have a diameter of tens of nanometers (nm) or smaller, such as about 10 nm or smaller. When excited by blue light, quantum dots can emit green or red light, depending on the material or size of the quantum dots.

[0058] A protective layer 130 may surround the quantum dot layer 120. The protective layer 130 may extend from a side surface of the quantum dot layer 120 to a side surface of the substrate layer 110. According to an example embodiment, the protective layer 130 may be provided to cover or surround the top surface of the quantum dot layer 120 and one or more side surfaces of the quantum dot layer 120. Furthermore, the protective layer 130 may be provided to cover or surround one or more side surfaces of the substrate layer 110. Because quantum dots are susceptible to moisture damage, the protective layer 130 is provided on the quantum dot layer 120 to improve reliability and reduce cost by reducing quantum dot consumption. The protective layer 130 may include, for example, Al2O3, SiO2, or SiN.

[0059] In micro-semiconductor light-emitting device (MSLP) displays, green and red MSLPs have lower luminous efficiency and are more expensive than blue MSLPs. Therefore, by using a color conversion structure to convert blue light emitted from blue MSLPs into green or red light to form a color image, the luminous efficiency of the MSLP display can be improved, and its manufacturing cost can be reduced.

[0060] According to one example embodiment, the color conversion structure 100 may have a film structure that improves the reliability of the quantum dot layer 120, increases light conversion efficiency, and is configured to be transferred to a micro-semiconductor light-emitting device display device.

[0061] The quantum dot layer 120 may include a first surface 1201 facing the substrate layer 110, a second surface 1202 opposite to the first surface 1201, and a third surface 1203 forming a side surface between the first surface 1201 and the second surface 1202. Protrusions 140 may be further provided on the second surface 1202 of the quantum dot layer 120. The second surface 1202 may be the upper surface through which light is emitted from the quantum dot layer 120. Protrusions 140 may be in direct contact with the second surface 1202, or another layer may be present between the protrusions 140 and the second surface 1202. For example, according to... Figure 1In an example implementation, protrusion 140 is provided on the protective layer 130. Protrusion 140 can be provided on a portion of the second surface 1202. For example, protrusion 140 can be a metal layer. The metal layer can include silver (Ag), gold (Au), platinum (Pt), nickel (Ni), chromium (Cr), and / or aluminum (Al). Protrusion 140 can be provided in a region corresponding to the edge of the second surface 1202 such that light can pass through its exit point emitted from the quantum dot layer 120 without obstruction. When the color conversion structure 100 is transferred to the display substrate, protrusion 140 can guide the quantum dot layer 120 upward. Due to protrusion 140, the roughness of the upper part of the color conversion structure 100 can be greater than the roughness of the lower part of the color conversion structure 100, such that when the color conversion structure 100 is transferred, protrusion 140 can guide the quantum dot layer 120. For example, when the color conversion structure 100 is transferred for fluid self-assembly, the quantum dot layer 120 can be positioned upwards due to the roughness difference between the upper and lower surfaces of the color conversion structure 100.

[0062] Figure 2 This illustrates one of the exemplary embodiments. Figure 1 A view showing an example of a modified protrusion 140 of the color conversion structure 100. Figure 2 In, with Figure 1 The components shown are substantially the same and are denoted by the same reference numerals, so they will not be described in detail here.

[0063] Reference Figure 2 Protrusions 141 may be provided in regions corresponding to the edges of the second surface 1202 and the third surface 1203 of the quantum dot layer 120. Protrusions 141 may extend to the side surfaces of the substrate layer 110. According to one example embodiment, protrusions 141 may be provided to cover or surround a portion of the top surface of the quantum dot layer 120 and one or more side surfaces of the quantum dot layer 120. Furthermore, protrusions 141 may be provided to cover or surround one or more side surfaces of the substrate layer 110. According to one example embodiment, a protective layer 130 may be provided between the quantum dot layer 120 and the protrusions 141. Furthermore, according to one example embodiment, a protective layer 130 may be provided between the substrate layer 110 and the protrusions 141. When protrusions 141 are provided up to the third surface 1203 of the quantum dot layer 120, light emitted from the quantum dot layer 120 may not leak in the lateral direction, thus improving optical efficiency. That is, since light is emitted only from the quantum dot layer 120 in the upward direction, the amount of effective light can be increased.

[0064] Figure 3 This illustrates one of the exemplary embodiments. Figure 1 Another example view showing a modified protrusion 140 of the color conversion structure 100.Figure 3 In, with Figure 1 The components shown are substantially the same and are denoted by the same reference numerals, so they will not be described in detail here.

[0065] The protrusion 142 may be provided entirely in the region corresponding to the second surface 1202 of the quantum dot layer 120. The protrusion 142 may have an uneven pattern and may include a transparent material capable of transmitting light. According to one example embodiment, the protrusion 142 may be provided to cover or surround the top surface of the quantum dot layer 120. According to one example embodiment, a protective layer 130 may be provided between the quantum dot layer 120 and the protrusion 142.

[0066] As described above, the protrusion 142 can cause a roughness difference between the upper and lower surfaces of the color conversion structure 100, such that when the color conversion structure 100 is transferred, the quantum dot layer 120 can be positioned upwards and the substrate layer 110 can be positioned downwards. The fourth surface 1104 of the substrate layer 110, opposite to the first surface 1201, is flat and has no protrusions thereon.

[0067] Figure 4 This illustrates one of the exemplary embodiments. Figure 1 A view of an example of a modified quantum dot layer 120 of the color conversion structure 100 shown. Figure 4 In, with Figure 1 The components shown are substantially the same and are denoted by the same reference numerals, so they will not be described in detail here.

[0068] The quantum dot layer 127 may have a structure in which quantum dots 126 are embedded in a porous layer 125. The porous layer 125 may include n-GaN, and the substrate layer 110 may also include n-GaN. The n-GaN may be etched to form the porous layer 125 by an electrochemical etching method. The electrochemical etching method will be described later.

[0069] By immersing a porous layer 125 in a liquid containing quantum dots 126, the quantum dots 126 can be embedded within the porous layer 125. The quantum dots 126 embedded in the porous layer 125 can increase light scattering within the quantum dot layer 127, thus improving the efficiency of color conversion. When the color conversion efficiency is high, the thickness of the quantum dot layer 127 can be reduced, and high-purity colors can be achieved due to reduced leakage of unconverted blue light.

[0070] Figure 5 This is a view showing a display device 200 according to an example embodiment. Figure 6 It is along Figure 5 The sectional view taken by line AA.

[0071] ReferenceFigure 5 The display device 200 may include a plurality of pixels PX, each pixel PX may include sub-pixels SP that emit different colors. Each pixel PX may be a unit for displaying an image. The image can be displayed by controlling the color and amount of light from each sub-pixel SP. For example, each pixel PX may include a first sub-pixel SP1, a second sub-pixel SP2, and a third sub-pixel SP3.

[0072] Reference Figure 6 The display device 200 may include a substrate 210, a blocking rib 220 provided on the substrate 210, a micro-semiconductor light-emitting device 240 provided in a groove 230 defined by the blocking rib 220, and a color conversion structure 250 provided on the micro-semiconductor light-emitting device 240. The micro-semiconductor light-emitting device 240 may include a micro-light-emitting diode or an organic light-emitting diode.

[0073] The recess 230 may include, for example, a first recess 231, a second recess 232, and a third recess 233. A micro-semiconductor light-emitting device 240 may be provided in the first recess 231, the second recess 232, and the third recess 233, respectively. For example, the micro-semiconductor light-emitting device 240 may emit blue light. Each micro-semiconductor light-emitting device 240 may include a first semiconductor layer 241, a light-emitting layer 242, and a second semiconductor layer 243 stacked sequentially. The first semiconductor layer 241 may include a first type of semiconductor. For example, the first semiconductor layer 241 may include an n-type semiconductor. The first semiconductor layer 241 may include an n-type III-V group semiconductor, such as n-GaN. The first semiconductor layer 241 may have a single-layer or multi-layer structure.

[0074] A light-emitting layer 242 may be provided on the upper surface of the first semiconductor layer 241. The light-emitting layer 242 can emit light when electrons and holes combine with each other within it. The light-emitting layer 242 may have a multiple quantum well (MQW) or a single quantum well (SQW) structure. The light-emitting layer 242 may include a III-V group semiconductor, such as GaN.

[0075] A second semiconductor layer 243 may be provided on the upper surface of the light-emitting layer 242. The second semiconductor layer 243 may include, for example, a p-type semiconductor. The second semiconductor layer 243 may include a p-type III-V group semiconductor, such as p-GaN. The second semiconductor layer 243 may have a single-layer or multi-layer structure. Alternatively, when the first semiconductor layer 241 includes a p-type semiconductor, the second semiconductor layer 243 may include an n-type semiconductor.

[0076] The micro-semiconductor light-emitting device 240 can be transferred to the substrate 210. The micro-semiconductor light-emitting device 240 can be transferred by imprinting, pick-and-place, or fluid self-assembly. When each micro-semiconductor light-emitting device 240 is etched or cut in a transferable form, the first semiconductor layer 241, the light-emitting layer 242, and the second semiconductor layer 243 can have the same width w1.

[0077] Color conversion structure 250 can be compared with reference Figure 1 The described color conversion structure is basically the same as 100. Figure 6 The color conversion structure 250 shown has the same characteristics as the reference. Figure 1 The described color conversion structure is the same as 100, but with reference to... Figures 2 to 4 Any of the described color conversion structures 100 can be used as color conversion structure 250.

[0078] Each color conversion structure 250 may include a substrate layer 251 and a quantum dot layer 252 provided on the substrate layer 251. In addition, a protective layer 253 may surround the quantum dot layer 252, and protrusions 254 may be provided in at least a portion of the upper region of the protective layer 253.

[0079] According to one example embodiment, the color conversion structure 250 may include a first color conversion structure 2501 provided in the second sub-pixel SP2 and a second color conversion structure 2502 provided in the third sub-pixel SP3. The color conversion structure 250 may not be provided in the first sub-pixel SP1. The quantum dot layer 252 of the first color conversion structure 2501 may emit red light when excited by blue light emitted from the micro-semiconductor light-emitting device 240. The quantum dot layer 252 of the second color conversion structure 2502 may emit green light when excited by blue light emitted from the micro-semiconductor light-emitting device 240. The emitted color band may vary depending on the material or size of the quantum dots in the quantum dot layer 252 of the color conversion structure 250.

[0080] The substrate layer 251 and quantum dot layer 252 of each color conversion structure 250 can have the same width w2. The width w2 of each color conversion structure 250 can be greater than the width w1 of each micro-semiconductor light-emitting device 240 to increase the area in which the color conversion structure 250 receives light emitted from the micro-semiconductor light-emitting device 240. Furthermore, when the color conversion structure 250 is transferred onto the micro-semiconductor light-emitting device 240, the position of the color conversion structure 250 in the groove 230 may be irregular. Therefore, the position of the color conversion structure 250 relative to the micro-semiconductor light-emitting device 240 can be different in the sub-pixel SP. The width w2 of each color conversion structure 250 is greater than the width w1 of each micro-semiconductor light-emitting device 240, so that even when the transfer position of the color conversion structure 250 changes, the area in which light emitted from the micro-semiconductor light-emitting device 240 will be received can be as wide as possible.

[0081] The color conversion structure 250 can be spaced apart from the blocking rib 220. The color conversion structure 250 can be transferred into the groove 230 and arranged in the groove 230 with a gap G between the blocking rib 220 and the color conversion structure 250 (instead of the color conversion structure 250 filling the groove 230).

[0082] Figure 7 It is shown Figure 6 The top view of the structure shown. Figure 7 A pixel PX is shown, which may include a first sub-pixel SP1, a second sub-pixel SP2, and a third sub-pixel SP3.

[0083] Multiple recesses 230 may be defined by blocking ribs 220. The multiple recesses 230 may include, for example, a first recess 231 provided in a first sub-pixel SP1, a second recess 232 provided in a second sub-pixel SP2, and a third recess 233 provided in a third sub-pixel SP3. One or more recesses 230 may be provided in each sub-pixel SP. Furthermore, the multiple recesses 230 may have different cross-sectional shapes or sizes depending on the sub-pixel SP. The size of each of the multiple recesses 230 may refer to the area or width of the cross-section of each of the multiple recesses 230. For example, the first recess 231 may have a quadrilateral cross-sectional shape, the second recess 232 may have a quadrilateral cross-sectional shape larger than the first recess 231, and the third recess 233 may have a circular cross-sectional shape. Furthermore, the color conversion structure 250 may have a shape or size corresponding to the shape or size of the corresponding recess 230. For example, the first color conversion structure 2501 may have a quadrilateral cross-sectional shape corresponding to the second recess 232, and the second color conversion structure 2502 may have a circular cross-sectional shape corresponding to the third recess 233.

[0084] As described above, the cross-sectional shape or size of the groove 230 and the color conversion structure 250 varies depending on the sub-pixel SP, such that when the color conversion structure 250 is transferred into the groove 230, the color conversion structure 250 can be located in the desired sub-pixel SP. When the first groove 231 is minimized and the cross-sectional shapes of the second groove 232 and the third groove 233 are different from each other, the first color conversion structure 2501 and the second color conversion structure 2502 can be transferred simultaneously. For example, the cross-sectional shape of the first groove 231 is not limited, as long as the first groove 231 has a size that does not allow the first color conversion structure 2501 and the second color conversion structure 2502 to enter the first groove 231. Furthermore, the second groove 232 may have a size or cross-sectional shape that does not allow the second color conversion structure 2502 to enter the second groove 232, and the third groove 233 may have a size or cross-sectional shape that does not allow the first color conversion structure 2501 to enter the third groove 233.

[0085] Alternatively, the grooves 230 can have the same shape, but their dimensions can differ. For example, the first groove 231, the second groove 232, and the third groove 233 can each have a quadrilateral cross-sectional shape, with the width (or size) of the first groove 231 being less than (<) the width (or size) of the second groove 232 being less than (<) the width (or size) of the third groove 233, and the width (or size) of the first color conversion structure 2501 being less than (<) the width (or size) of the second color conversion structure 2502. In this case, the first color conversion structure 2501 and the second color conversion structure 2502 can be transferred sequentially. The second color conversion structure 2502, which has the largest size, can be transferred to the third groove 233 first, and then the first color conversion structure 2501 can be transferred to the second groove 232.

[0086] The shapes and sizes of the first groove 231, the second groove 232, the third groove 233, the first color conversion structure 2501, and the second color conversion structure 2502 are appropriately selected so that the first color conversion structure 2501 and the second color conversion structure 2502 can be simultaneously or sequentially transferred into their corresponding grooves 230. However, this disclosure is not limited to... Figure 7 The dimensions and shape are shown.

[0087] Furthermore, although the number of grooves in each sub-pixel SP can vary, Figure 7 An example is shown where two grooves are provided in each subpixel SP.

[0088] Figure 8 This illustrates an example implementation where... Figure 6 The display device 200 shown is further illustrated with an example view of a cover layer 280 and a reflective layer 260.

[0089] exist Figure 8 In, with Figure 6 The components shown are substantially the same and are designated by the same reference numerals, therefore their detailed description will not be given here. A reflective layer 260 may be further provided in each recess 230 on the blocking rib 220. The reflective layer 260 provides effective light by reflecting light emitted from the micro-semiconductor light-emitting device 240. The micro-semiconductor light-emitting device 240 may be arranged in the recesses 230 respectively; the first recess 231, the second recess 232, and the third recess 233 may be covered by a capping layer 280. The capping layer 280 may include a transparent material capable of transmitting light. The capping layer 280 may protect and secure the first color conversion structure 2501 and the second color conversion structure 2502.

[0090] Reference Figures 9 to 14 A method for manufacturing a color conversion structure according to an example embodiment is described.

[0091] Reference Figure 9 A first layer 320 can be formed on the first substrate 310. (Refer to...) Figure 10 The base layer 321 can be formed by patterning and etching the first layer 320. (See reference...) Figure 11 A quantum dot layer 330 can be formed on the substrate layer 321. (See reference...) Figure 12 A protective layer 340 can be formed such that it surrounds the quantum dot layer 330. The protective layer 340 can also surround both the quantum dot layer 330 and the substrate layer 321. (See reference...) Figure 13 A protrusion 350 can be formed in the upper edge region of the protective layer 340. According to an example embodiment, a layer for forming the protrusion 350 can be formed on the protective layer 340, and then an exposure and etching process can be performed on that layer to form the protrusion 350 in the upper edge region of the protective layer 340. The protrusion 350 may include metal. Light emitted from the quantum dot layer 330 can be output through regions in which no protrusion 350 is formed. Subsequently, refer to... Figure 14 The color conversion structures 360, discretely arranged on the first substrate 310, can be separated from each other by removing the first substrate 310 using a solution. The color conversion structures 360 may have a film structure having a width of, for example, about 300 μm or less.

[0092] Figure 15 and Figure 16 This illustrates an embodiment according to another example. Figure 12 The view shown illustrates the method that creates the modified protrusion after the operations depicted. (Refer to...) Figure 15The protrusion 352 can be formed in such a way that it extends not only on the upper edge portion of the protective layer 340, but also on the side surface of the protective layer 340. Hereafter, refer to... Figure 16 A transferable color conversion structure 362 can be formed by removing the first substrate 310.

[0093] Figure 17 and Figure 18 This illustrates an embodiment according to another example. Figure 12 The view shown illustrates the method that creates the modified protrusion after the operations depicted. (Refer to...) Figure 17 Another layer may be formed on top of the protective layer 340, and an embossed pattern 355 may be formed on this other layer. According to an example embodiment, this other layer may be patterned to form the embossed pattern 355. The embossed pattern 355 may be formed on the upper surface of the protective layer 340 and may include a transparent material so that light emitted from the quantum dot layer 330 can be output through the embossed pattern 355. An example embodiment shows an instance where the embossed pattern 355 is formed as a protrusion. See also... Figure 18 A transferable color conversion structure 365 can be formed by removing the first substrate 310.

[0094] When the color conversion structures 360, 362, or 365 are transferred to the display substrate (described later), Figure 14 The protrusion shown is 350. Figure 16 The protrusion 352 shown or Figure 18 The raised / lower pattern 355 can guide the color conversion structures 360, 362, or 365, allowing the upper and lower sides of the color conversion structures 360, 362, or 365 to be maintained. When the color conversion structures 360, 362, or 365 are transferred to the display substrate via a fluid self-assembly method, the upper and lower sides of the color conversion structures 360, 362, or 365 do not need to be inverted because the protrusions 350, 362, or raised / lower pattern 355 interact with the fluid.

[0095] Figures 19 to 24 This is a view illustrating a method for manufacturing a color conversion structure according to another exemplary embodiment.

[0096] Reference Figure 19 A first layer 420 and a second layer 430 are grown on a substrate 410. The substrate 410 can be, for example, a sapphire substrate or a silicon substrate. The first layer 420 may include n-GaN, and the second layer 430 may include n-GaN. The n-GaN may include, for example, a silicon dopant. (See reference...) Figure 20 The first layer 420 and the second layer 430 can be etched by an electrochemical etching method to form a base layer 421 and a porous layer 431.

[0097] When the first layer 420 and the second layer 430 are electrochemically etched, the second layer 430, which contains only n-type dopant, can selectively be formed into a porous layer 431, and the first layer 420 can be etched without change as the substrate layer 421. According to this electrochemical etching method, etching can be performed by immersing the sample to be etched in a specific solvent, connecting electrodes to the sample and the solvent, and generating charge carriers through an external bias voltage. In this case, various solvents such as oxalic acid can be used as solvents. In the electrochemical etching method, the electrodes can be directly connected to the sample, or indirectly connected to the sample using two chambers.

[0098] When a voltage is applied to the sample, the sample can be selectively etched under specific conditions, thus transforming the sample into a porous layer. For example, an etchant comprising at least one selected from the group consisting of KOH, NaOH, HCl, C2H2O4, H2SO4, HNO3, and HF can be used.

[0099] Reference Figure 21 A quantum dot layer 432, in which quantum dots are filled in a porous structure, can be formed by immersing a porous layer 431 in a liquid containing quantum dots. (See reference...) Figure 22 A protective layer 440 can be deposited around the substrate layer 421 and the quantum dot layer 432. The protective layer 440 protects the quantum dot layer 432, preventing its performance from being degraded by external environmental factors. The protective layer 440 may include, for example, Al2O3, SiO2, or SiN.

[0100] Reference Figure 23 A protrusion 450 may be formed on the protective layer 440. The protrusion 450 may be provided on at least a portion of the surface of the protective layer 440 corresponding to the upper surface of the quantum dot layer 432. The upper surface of the quantum dot layer 432 may be the surface through which light passes. The protrusion 450 may be provided in the edge region of the upper surface of the quantum dot layer 432 (excluding the region through which light will pass). In this case, the protrusion 450 may include a metal layer. The metal layer may include, for example, silver (Ag), gold (Au), platinum (Pt), nickel (Ni), chromium (Cr), and / or aluminum (Al). Alternatively, the protrusion 450 may be an uneven pattern formed on the upper surface of the quantum dot layer 432. When the protrusion 450 is formed as an uneven pattern, the protrusion 450 may include a light-transmitting material.

[0101] Reference Figure 24 Color conversion structures 460 can be formed independently of each other by removing substrate 410 from substrate layer 421.

[0102] Reference Figures 25 to 27 A method for manufacturing a display device according to an example embodiment is described.

[0103] Reference Figure 25 Micro-semiconductor light-emitting devices 520 can be disposed on a display substrate 510. The display substrate 510 can be a backplane substrate including a driver for driving the micro-semiconductor light-emitting devices 520, or a transfer mold substrate for transferring the micro-semiconductor light-emitting devices 520. Each micro-semiconductor light-emitting device 520 may include a first semiconductor layer 521, a light-emitting layer 522, and a second semiconductor layer 523. The micro-semiconductor light-emitting devices 520 can be disposed on the display substrate 510 by a transfer method. As a transfer method, a pick-and-place method or a fluid self-assembly method can be used. For example, the micro-semiconductor light-emitting devices 520 may have a width of about 200 μm or less. The micro-semiconductor light-emitting devices 520 may be spaced apart from each other on a sub-pixel basis. Alternatively, multiple micro-semiconductor light-emitting devices may be disposed in each sub-pixel region.

[0104] Reference Figure 26 A barrier rib 540 can be formed on the display substrate 510 to define one or more recesses 550 based on subpixels. The barrier rib 540 can be formed by forming a layer covering the micro-semiconductor light-emitting device 520 and then etching the layer. A reflective layer 545 can be further formed on the inner side of the barrier rib 540. A metal layer can be formed as the reflective layer 545.

[0105] Reference Figure 27 The aforementioned color conversion structure 360 ​​can be arranged on the micro semiconductor light-emitting device 520. Although in Figure 27 The color conversion structure 360 ​​is illustrated by way of example, but color conversion structures 362, 365, or 460 described above can also be used. The color conversion structure 360 ​​can be arranged in the groove 550 by a transfer method. As a transfer method, a pick-and-place method or a fluid self-assembly method can be used.

[0106] A method for transferring a color conversion structure 360 ​​via fluid self-assembly according to an example embodiment will now be described. (Refer to...) Figure 28 A liquid can be supplied to the groove 550 to transfer the color conversion structure 360 ​​into the groove 550 (S101). Any type of liquid can be used, as long as it does not corrode or damage the color conversion structure 360. The liquid may include, for example, one or a combination thereof selected from the group consisting of water, ethanol, alcohols, polyols, ketones, halogenated hydrocarbons, acetone, fluxes, and organic solvents. The organic solvent may include, for example, isopropanol (IPA). The liquid is not limited to this; other types of liquids may be used.

[0107] For example, various methods can be used to supply liquid to the recess 550, such as jetting, dispensing, inkjet dotting, and methods that allow the liquid to flow on the display substrate 510. The amount of liquid supplied can be adjusted in various ways so that the liquid can fit into or overflow the recess 550.

[0108] The color conversion structure 360 ​​can be supplied to the display substrate 510 (S102). The color conversion structure 360 ​​can be directly dispersed on the display substrate 510 without using any other liquid, or it can be supplied to the display substrate 510 in a state where the color conversion structure 360 ​​is contained in a suspension. As a method for supplying the color conversion structure 520 contained in the suspension, a jetting method, a liquid-dropping distribution method, an inkjet dot method that jets liquid like a printing method, or a method that allows the suspension to flow on the display substrate 510 can be used, etc. Thereafter, the display substrate 510 can be scanned with an absorbent material capable of absorbing the liquid (S103). As long as the absorbent material can absorb the liquid, the absorbent material is sufficient, and the shape or structure of the absorbent material is not limited. Examples of absorbent materials can include fabric, tissue, polyester fiber, paper, wipe, etc.

[0109] While the display substrate 510 is being appropriately pressed with the absorbent material, the display substrate 510 can be scanned with the absorbent material. This scanning may include the action of the absorbent material absorbing liquid as it passes through the groove 550 in contact with the display substrate 510. This scanning can be performed by various methods, such as sliding the absorbent material, rotating the absorbent material, translating the absorbent material, reciprocating the absorbent material, rolling the absorbent material, spinning the absorbent material, and / or rubbing the absorbent material, and these methods can be performed in a regular or irregular manner. The scanning can also be performed by moving the display substrate 510 instead of moving the absorbent material; in this case, methods such as sliding, rotating, translating, reciprocating, rolling, spinning, and / or rubbing can be used. Furthermore, the scanning can be performed by moving both the absorbent material and the display substrate 510. In this way, the color conversion structure 360 ​​can be aligned with the groove 550 of the display substrate 510 by a fluid self-assembly method (S104).

[0110] When the color conversion structure 360 ​​is aligned with the groove 550, the upper and lower sides of the color conversion structure 360 ​​can be distinctly oriented. The protrusion 350 is on the upper part of the color conversion structure 360, and the lower surface of the substrate layer 321 formed on the lower side of the color conversion structure 360 ​​is flat, allowing the upper and lower sides of the color conversion structure 360 ​​to have different degrees of roughness, thus enabling different surface energy levels. Therefore, when scanning the display substrate 510 while the absorbent material absorbs liquid, the upper and lower sides of the color conversion structure 360 ​​can be guided. During scanning with the absorbent material, the color conversion structure 360 ​​can be guided such that the surface of the color conversion structure 360 ​​with a relatively high roughness value faces upwards according to the liquid flow, and the surface of the color conversion structure 360 ​​with a relatively low roughness value faces downwards according to the liquid flow.

[0111] Figure 29 This is a block diagram illustrating an electronic device 8201 including a display device 8260 according to an example embodiment.

[0112] Reference Figure 29 Electronic device 8201 can be provided in a network environment 8200. In the network environment 8200, electronic device 8201 can communicate with another electronic device 8202 via a first network 8298 (such as a short-range wireless communication network), or with another electronic device 8204 and / or a server 8208 via a second network 8299 (such as a long-range wireless communication network). Electronic device 8201 can communicate with electronic device 8204 via server 8208. Electronic device 8201 may include a processor 8220, a memory 8230, an input device 8250, a sound output device 8255, a display device 8260, an audio module 8270, a sensor module 8276, an interface 8277, a haptic module 8279, a camera module 8280, a power management module 8288, a battery 8289, a communication module 8290, a user identification module 8296, and / or an antenna module 8297. Some of the components of electronic device 8201 may be omitted, or other components may be added to electronic device 8201. Some of the components may be implemented as an integrated circuit. For example, sensor module 8276 (such as a fingerprint sensor, iris sensor, or illuminance sensor) may be embedded in display device 8260 (such as a display).

[0113] Processor 8220 can execute software (such as program 8240) to control electronic device 8201 connected to one or more other components (such as hardware or software components), and processor 8220 can perform various data processing or operations. As part of the data processing or computation, processor 8220 can load commands and / or data received from other components (such as sensor module 8276, communication module 8290, etc.) onto volatile memory 8232, process the commands and / or data stored in volatile memory 8232, and store the resulting data in non-volatile memory 8234. Non-volatile memory 8234 may include internal memory 8236 and external memory 8238. Processor 8220 may include: a main processor 8221 (such as a central processing unit, application processor, etc.); and a coprocessor 8223 (such as a graphics processing unit, image signal processor, sensor central processor, communication processor, etc.), which may operate independently or in conjunction with the main processor 8221. The coprocessor 8223 consumes less power than the main processor 8221 and can perform specialized functions.

[0114] When the main processor 8221 is inactive (sleep mode), the coprocessor 8223 can take over from the main processor 8221 to control the functions and / or states associated with some of the components of the electronic device 8201 (such as the display device 8260, sensor module 8276, and communication module 8290). Alternatively, when the main processor 8221 is active (application execution mode), the coprocessor 8223 can work with the main processor 8221 to control the functions and / or states associated with some of the components of the electronic device 8201 (such as the display device 8260, sensor module 8276, and communication module 8290). The coprocessor 8223 (such as an image signal processor, communication processor, etc.) can be implemented as part of a function-related component (such as camera module 8280 or communication module 8290).

[0115] The memory 8230 may store various data required by the components of the electronic device 8201 (such as processor 8220, sensor module 8276, etc.). For example, this data may include: software (such as program 8240); and instruction input data and / or output data related to the software. The memory 8230 may include volatile memory 8232 and / or non-volatile memory 8234.

[0116] The program 8240 can be stored as software in the memory 8230 and may include an operating system 8242, middleware 8244 and / or application 8246.

[0117] Input device 8250 can receive commands and / or data from outside the electronic device 8201 (e.g., a user) to be used in components of the electronic device 8201 (such as processor 8220). Input device 8250 may include a remote control, microphone, mouse, keyboard, and / or digital pen (such as a stylus).

[0118] The sound output device 8255 can output sound signals to the outside of the electronic device 8201. The sound output device 8255 may include a speaker and / or a receiver. The speaker can be used for general purposes, such as multimedia playback or recorded data playback, and the receiver can be used to receive incoming calls. The receiver can be integrated into the speaker or can be implemented as a separate device.

[0119] Display device 8260 can provide information to the outside of electronic device 8201 in a visual manner. Display device 8260 may include means such as a display, holographic device, or projector, and control circuitry for controlling the means. Display device 8260 may include reference... Figures 5 to 8 The described display device 200 can be referenced. Figures 25 to 27 The manufacturing method described herein is used to manufacture the device. The display device 8260 may include: touch circuitry configured to detect touch; and / or sensor circuitry (such as a pressure sensor) configured to measure the magnitude of the force generated by the touch.

[0120] The audio module 8270 can convert sound into electrical signals, or vice versa. The audio module 8270 can acquire sound through the input device 8250, or output sound through the sound output device 8255 and / or through the speaker and / or headphones of another electronic device (such as electronic device 8202) directly or wirelessly connected to electronic device 8201.

[0121] Sensor module 8276 can detect the operating state of electronic device 8201 (such as power or temperature) or the external environmental state (such as user state), and can generate electrical signals and / or data values ​​corresponding to the detected state. Sensor module 8276 may include gesture sensors, gyroscope sensors, atmospheric pressure sensors, magnetic sensors, accelerometer sensors, grip sensors, proximity sensors, color sensors, infrared (IR) sensors, biometric sensors, temperature sensors, humidity sensors, and / or illuminance sensors.

[0122] Interface 8277 may support one or more specified protocols that can be used by electronic device 8201 to connect directly or wirelessly to another electronic device (such as electronic device 8202). Interface 8277 may include a High Definition Multimedia Interface (HDMI), a Universal Serial Bus (USB) interface, a Secure Digital (SD) card interface, and / or an audio interface.

[0123] Connection end 8278 may include a connector through which electronic device 8201 can be physically connected to another electronic device (such as electronic device 8202). Connection end 8278 may include an HDMI connector, a USB connector, an SD card connector, and / or an audio connector (such as a headphone connector).

[0124] The haptic module 8279 can convert electrical signals into mechanical stimuli (such as vibration, motion, etc.) or electrical stimuli that can be felt by the user through touch or kinesthesia. The haptic module 8279 may include a motor, a piezoelectric element, and / or an electrical stimulation device.

[0125] Camera module 8280 can capture still and moving images. Camera module 8280 may include a lens assembly, an image sensor, an image signal processor, and / or a flash, the lens assembly comprising one or more lenses. The lens assembly of camera module 8280 can collect light from the object to be imaged.

[0126] The power management module 8288 can manage the power supplied to the electronic device 8201. The power management module 8288 can be implemented as part of a power management integrated circuit (PMIC).

[0127] Battery 8289 can supply power to components of electronic device 8201. Battery 8289 may include a non-rechargeable primary battery, a rechargeable secondary battery, and / or a fuel cell.

[0128] Communication module 8290 can support the establishment of a direct (wired) communication channel and / or a wireless communication channel between electronic device 8201 and another electronic device (such as electronic device 8202, electronic device 8204, or server 8208), and can support communication through the established communication channel. Communication module 8290 may include one or more communication processors that operate independently of processor 8220 (such as an application processor) and support direct communication and / or wireless communication. Communication module 8290 may include: wireless communication module 8292 (such as a cellular communication module, a short-range wireless communication module, or a Global Navigation Satellite System (GNSS) communication module); and / or wired communication module 8294 (such as a local area network (LAN) communication module or a power line communication module). Communication modules 8292 and 8294 can communicate with another electronic device via a first network 8298 (e.g., a short-range communication network such as Bluetooth, WiFi Direct, or Infrared Data Association (IrDA)) or a second network 8299 (e.g., a long-range communication network such as a cellular network, the Internet, or a computer network (LAN, WAN, etc.)). Such various types of communication modules can be integrated into a single component (a single chip, etc.) or implemented as multiple separate components (multiple chips). Wireless communication module 8292 can identify and authenticate electronic device 8201 in communication networks such as the first network 8298 and / or the second network 8299 by using user information (such as the International Mobile Subscriber Identity (IMSI)) stored in user identification module 8296.

[0129] Antenna module 8297 can transmit signals and / or power to or from external sources (e.g., other electronic devices). The antenna may include a radiator having a conductive pattern formed on a substrate (such as a PCB). Antenna module 8297 may include one or more such antennas. When antenna module 8297 includes multiple antennas, communication module 8290 can select one of the multiple antennas suitable for a communication method used in a communication network such as a first network 8298 and / or a second network 8299. Signals and / or power can be transmitted between communication module 8290 and another electronic device via the selected antenna. In addition to the antenna, other components (such as radio frequency integrated circuits (RFICs)) may be included as part of antenna module 8297.

[0130] Some of the components can be connected to each other and exchange signals (such as commands or data) through inter-peripheral communication schemes (such as bus, general purpose input / output (GPIO), serial peripheral interface (SPI) or mobile industrial processor interface (MIPI)).

[0131] Commands or data can be transmitted between electronic device 8201 and (external) electronic device 8204 via server 8208 connected to the second network 8299. Other electronic devices 8202 and 8204, as well as electronic device 8201, can be of the same type or different types. All or some of the operations of electronic device 8201 can be performed by one or more other electronic devices 8202 and 8204, as well as server 8208. For example, when electronic device 8201 needs to perform a specific function or service, it can request one or more other electronic devices to perform part or all of that function or service in its place. The one or more other electronic devices receiving the request can perform additional functions or services related to the request and can send the results to electronic device 8201. For this purpose, cloud computing, distributed computing, and / or client-server computing technologies can be used.

[0132] Figure 30 This is a view illustrating an example of an electronic device applied to a mobile device 9100 according to an exemplary embodiment. The mobile device 9100 may include a display device 9110, which may include a reference... Figures 5 to 8 The display device 200 is described. The display device 9110 may have a foldable structure, such as a multi-foldable structure.

[0133] Figure 31 This is a view illustrating an example of a display device applied to a vehicle according to an exemplary embodiment. The display device may be a vehicle head-up display 9200 and may include: a display 9210 provided in a region of the vehicle; and a light path changing member 9220 configured to change the light path so that the driver can see an image generated by the display 9210.

[0134] Figure 32 This is a view illustrating an example of a display device applied to augmented reality glasses or virtual reality glasses according to an exemplary embodiment. Augmented reality glasses 9300 may include: a projection system 9310 configured to form an image; and elements 9320 configured to direct the image from the projection system 9310 into the user's eyes. Figures 5 to 8 The described display device 200.

[0135] Figure 33 This is a view illustrating an example of a display device applied to a large signboard 9400 according to an exemplary embodiment. The signboard 9400 can be used for outdoor advertising using a digital information display, and the advertising content can be controlled via a communication network, etc. For example, the signboard 9400 can be controlled by referring to... Figure 29The described electronic device 8201 is implemented.

[0136] Figure 34 This is a view illustrating an example of a display device applied to a wearable display 9500 according to an exemplary embodiment. The wearable display 9500 may include reference... Figures 5 to 8 The described display device 200 can be referenced. Figure 29 The described electronic device 8201 is implemented.

[0137] The display device of the example implementation can be applied to a variety of products, such as scrollable TVs and stretchable displays.

[0138] The color conversion structure of the example implementation can be effectively transferred to a display device including a micro-semiconductor light-emitting device. The color conversion structure can be transferred via a fluid self-assembly method.

[0139] The display device of the example embodiment can effectively display color images using the color conversion structure. According to the manufacturing method of the display device of the example embodiment, the color conversion structure can be easily transferred.

[0140] It should be understood that the embodiments described herein are to be considered descriptive only and not for limiting purposes. Descriptions of features or aspects within each embodiment should generally be considered applicable to other similar features or aspects in other embodiments. Although one or more embodiments have been described with reference to the accompanying drawings, those skilled in the art will understand that various changes in form and detail may be made therein without departing from the spirit and scope defined by the appended claims.

[0141] This application is based on and claims priority to Korean Patent Application No. 10-2021-0045518 filed with the Korean Intellectual Property Office on April 7, 2021 and Korean Patent Application No. 10-2021-0081041 filed with the Korean Intellectual Property Office on June 22, 2021, the disclosures of which are incorporated herein by reference in their entirety.

Claims

1. A color conversion structure configured for transfer to a micro-semiconductor light-emitting device, comprising: basal layer; Provide a quantum dot layer on the substrate layer; Provide a protective layer on the upper surface of the quantum dot layer; as well as A protrusion is provided on the protective layer, the protrusion giving the upper and lower surfaces of the color conversion structure different roughness to guide the color conversion structure during its transfer.

2. The color conversion structure according to claim 1, The quantum dot layer includes: Porous layer; and Multiple quantum dots embedded in the porous layer.

3. The color conversion structure according to claim 2, The porous layer mentioned above comprises n-GaN.

4. The color conversion structure according to claim 1, The substrate layer has a first width equal to the second width of the quantum dot layer.

5. The color conversion structure according to claim 1, wherein the protective layer surrounds the quantum dot layer.

6. The color conversion structure according to claim 5, wherein the protrusion is provided on the edge of the protective layer.

7. The color conversion structure according to claim 1, The quantum dot layer includes a first surface facing the substrate, a second surface opposite to the first surface, and a third surface forming a side surface between the first surface and the second surface. The protrusions are provided in a region corresponding to the edge of the second surface of the quantum dot layer, or in a region corresponding to the edge of the second surface of the quantum dot layer and the third surface.

8. The color conversion structure according to claim 1, The quantum dot layer includes a first surface facing the substrate and a second surface opposite to the first surface, and The protrusions include patterns provided in the region corresponding to the second surface.

9. The color conversion structure according to claim 1, The substrate layer includes SiO2, SiN, or GaN.

10. A display device, comprising: Display substrate; A plurality of blocking ribs are provided on the display substrate, the plurality of blocking ribs being spaced apart from each other; A miniature semiconductor light-emitting device is provided in a recess defined by adjacent blocking ribs among the plurality of blocking ribs; as well as A color conversion structure is provided on the micro semiconductor light-emitting device, the color conversion structure comprising: basal layer Provide a quantum dot layer on the substrate layer, A protective layer surrounding the quantum dot layer, and A protrusion is provided on the protective layer, the protrusion giving the upper and lower surfaces of the color conversion structure different roughness, to guide the color conversion structure during its transfer to the micro-semiconductor light-emitting device.

11. The display device according to claim 10, The quantum dot layer includes: Porous layer; as well as Multiple quantum dots embedded in the porous layer.

12. The display device according to claim 11, The porous layer mentioned above comprises n-GaN.

13. The display device according to claim 10, The substrate layer has a first width equal to the second width of the quantum dot layer.

14. The display device according to claim 10, The protective layer is also provided on the side surface of the quantum dot layer.

15. The display device of claim 10, wherein the protrusion is provided on the edge of the protective layer.

16. The display device according to claim 10, The quantum dot layer includes a first surface facing the substrate, a second surface opposite to the first surface, and a third surface forming a side surface between the first surface and the second surface. The protrusions are provided in a region corresponding to the edge of the second surface of the quantum dot layer, or in a region corresponding to the edge of the second surface of the quantum dot layer and the third surface.

17. The display device according to claim 10, The quantum dot layer includes a first surface facing the substrate and a second surface opposite to the first surface, and The protrusions include patterns provided in the region corresponding to the second surface.

18. The display device according to claim 10, The substrate layer includes SiO2, SiN, or GaN.

19. The display device according to claim 10, The groove includes a first groove, a second groove, and a third groove, and The first groove, the second groove, and the third groove have different cross-sectional shapes or different cross-sectional dimensions.

20. The display device according to claim 10, The color conversion structure is spaced apart from the blocking rib, and a gap exists between the color conversion structure and the blocking rib.

21. The display device according to claim 10, The substrate layer is arranged toward the micro semiconductor light-emitting device.

22. The display device according to claim 10, The aforementioned micro-semiconductor light-emitting device includes a micro-light-emitting diode or an organic light-emitting diode.

23. A method of manufacturing a display device, the method comprising: A first layer is formed on the substrate; By etching the first layer, multiple base layers spaced apart from each other are formed; Multiple quantum dot layers are formed on the multiple substrate layers that are spaced apart from each other; The plurality of color conversion structures are separated from each other by removing the substrate, each of the plurality of color conversion structures comprising: The corresponding base layer among the plurality of base layers, The corresponding quantum dot layers in the plurality of quantum dot layers, A protective layer on the upper surface of the corresponding quantum dot layer, and Protrusions on the protective layer; Multiple blocking ribs are formed on the display substrate; Transferring multiple micro-semiconductor light-emitting devices into multiple recesses defined by the multiple blocking ribs; and The multiple color conversion structures, which are separate from each other, are transferred onto the multiple micro-semiconductor light-emitting devices in the multiple grooves. The protrusions cause the upper and lower surfaces of each of the plurality of color conversion structures to have different roughness in order to guide the color conversion structures during the transfer of the color conversion structures.

24. The method according to claim 23, Each of the quantum dot layers includes: Porous layers; and Multiple quantum dots embedded in the porous layer.

25. The method according to claim 24, The porous layer mentioned above comprises n-GaN.

26. The method according to claim 23, Each of the substrate layers has a first width equal to the second width of each of the quantum dot layers.

27. The method according to claim 23, The protective layer surrounds the quantum dot layer.

28. The method of claim 27, wherein the protrusion is provided on the edge of the protective layer.

29. The method according to claim 23, The quantum dot layer includes a first surface facing the substrate, a second surface opposite to the first surface, and a third surface forming a side surface between the first surface and the second surface. The protrusions are provided in a region corresponding to the edge of the second surface of the quantum dot layer, or in a region corresponding to the edge of the second surface of the quantum dot layer and the third surface.

30. The method according to claim 23, The quantum dot layer includes a first surface facing the substrate and a second surface opposite to the first surface, and The protrusions include patterns provided in the region corresponding to the second surface.

31. The method according to claim 23, The substrate layer includes SiO2, SiN, or GaN.

32. The method according to claim 23, The aforementioned micro-semiconductor light-emitting device includes a micro-light-emitting diode or an organic light-emitting diode.

33. A color conversion structure, comprising: Quantum dot layer; A substrate layer is provided on the quantum dot layer, the substrate layer being configured to separate the quantum dot layer from the micro-semiconductor light-emitting device after the color conversion structure is transferred to the micro-semiconductor light-emitting device; A protective layer surrounding the quantum dot layer; as well as A protrusion is provided on the protective layer, the protrusion giving the upper and lower surfaces of the color conversion structure different roughness to guide the color conversion structure during its transfer.

Images