Power semiconductor device, method for manufacturing power semiconductor device, and power conversion device

Abstract

Provided are an electric semiconductor device and a method for manufacturing an electric semiconductor device that ensures a bonding thickness and has a high-quality and highly reliable bonding portion. Also provided is an electric power conversion device. A semiconductor element (1) is bonded to a circuit pattern (3a) integrated with an insulating layer (3b) and a heat sink (3c), a housing (8) is bonded to the periphery of the heat sink (3c) in a manner that surrounds the semiconductor element, the circuit pattern and the insulating layer, and a packaging resin (10) is packaged in an area surrounded by the insulating layer, the circuit pattern and the housing. An internal electrode (4) includes a flat plate-shaped portion (4a), a through hole (6) and a pair of curved and inclined support portions (4b), the support portion is bonded to the circuit pattern, and the upper surface of the semiconductor element, the through hole and an embossed portion (11) provided around the through hole are bonded. The internal electrode is bonded to an external electrode (7) integrally formed with the housing.

Description

Technical Field

[0001] The present invention relates to a power semiconductor device, a method for manufacturing a power semiconductor device, and a power conversion device. Background Art

[0002] In the conventional power semiconductor device, a semiconductor chip is mounted on a circuit pattern of an insulating substrate disposed on an aluminum fin, the insulating substrate and the semiconductor chip are surrounded by a housing, and the inner side of the housing is encapsulated by a sealing resin. A first lead frame integrated with the housing is bonded to the semiconductor chip via solder, and a first spacer formed of an insulating resin is sandwiched between the circuit pattern of the insulating substrate and the first lead frame and is provided via an adhesive. (For example, refer to Patent Document 1)

[0003] Patent Document 1: Japanese Patent Application Publication No. 2019-125678 (Paragraphs 0013 to 0022, Figure 1 )

[0004] However, in order to bond the first spacer to the circuit pattern and the first lead frame, a new adhesive preparation and bonding process are required. In addition, when the semiconductor chip and the first lead frame are bonded via solder, in order to melt the solder, it is necessary to heat the solder, the semiconductor chip and the first lead frame by reflow soldering or the like to raise their temperatures. In particular, it is difficult to raise the temperature of the first lead frame to a desired temperature in terms of structure. Moreover, since the first spacer is an insulating resin with a low thermal conductivity, the temperature rise becomes insufficient, and it is sometimes difficult to ensure the solder thickness and obtain a good solder joint. Summary of the invention

[0005] The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a power semiconductor device having a high-quality and highly reliable junction portion while ensuring a sufficient junction thickness.

[0006] Another object of the present invention is to provide a method for manufacturing a power semiconductor device having a high-quality and highly reliable joint portion with a secure joint thickness by an easy manufacturing method that achieves improved productivity.

[0007] The power semiconductor device involved in the present invention comprises: a semiconductor element; a circuit pattern on which the semiconductor element is mounted; an insulating layer on which the circuit pattern is mounted; a heat sink fin on which the insulating layer is mounted; a shell bonded to the periphery of the heat sink fin and surrounding the semiconductor element, the circuit pattern and the insulating layer; a packaging resin encapsulated in an area surrounded by the insulating layer, the circuit pattern and the shell; an internal electrode joined to the semiconductor element and the circuit pattern, the internal electrode including a flat plate-shaped portion, the internal electrode having a pair of supporting portions; and an external electrode joined to the internal electrode and integrally formed with the shell.

[0008] In addition, the manufacturing method of the power semiconductor device involved in the present invention has the following steps: joining the semiconductor element and the circuit pattern mounted on the heat sink fin through the insulating layer; joining the semiconductor element and the internal electrode, and joining the internal electrode and the circuit pattern; bonding the heat sink fin and the shell; joining the internal electrode and the external electrode integrally formed with the shell; wiring connection is implemented by wire bonding the semiconductor element and the control terminal integrally formed with the shell through metal wires; and resin encapsulating the area surrounded by the insulating layer, the circuit pattern and the shell.

[0009] Effects of the Invention

[0010] According to the power semiconductor device according to the present invention, it is possible to ensure the bonding thickness and obtain a high-quality and highly reliable bonding portion.

[0011] According to the method for manufacturing a power semiconductor device according to the present invention, it is possible to ensure a bonding thickness and obtain a high-quality and highly reliable bonding portion by an easy manufacturing method that achieves improved productivity. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 It is a plan view showing the appearance of the power semiconductor device according to the first embodiment.

[0013] Figure 2 It is a cross-sectional view showing the structure of the power semiconductor device according to the first embodiment.

[0014] Figure 3 The structure of the power semiconductor device according to the first embodiment is shown in a plan view before encapsulation with an encapsulating resin.

[0015] Figure 4 This is a flowchart showing the method for manufacturing the power semiconductor device according to the first embodiment.

[0016] Figure 5 This is a flowchart showing a modified example of the method for manufacturing the power semiconductor device according to the first embodiment.

[0017] Figure 6 It is a plan view showing the appearance of a power semiconductor device according to the second embodiment.

[0018] Figure 7 It is a cross-sectional view showing the structure of a power semiconductor device according to the second embodiment.

[0019] Figure 8 The structure of the power semiconductor device according to the second embodiment is shown in a plan view before encapsulation with an encapsulating resin.

[0020] Fig. 9This is a flowchart showing a method for manufacturing a power semiconductor device according to the second embodiment.

[0021] Fig.10 It is a block diagram showing the structure of a power conversion system including a power conversion device according to a third embodiment. DETAILED DESCRIPTION

[0022] Implementation Method 1

[0023] The configuration of the power semiconductor device 100 a according to the first embodiment will be described with reference to the drawings. Figure 1 It is a plan view showing the appearance of the power semiconductor device 100 a. Figure 2 yes Figure 1 Cross-sectional view at line AA. Figure 3 1 is a top view showing the structure of the power semiconductor device 100a before being encapsulated by the encapsulating resin 10. Figure 3 It is also recorded that Figure 1 The corresponding position of the AA line.

[0024] When viewed from above, the top surface of the power semiconductor device 100a looks like Figure 1 As shown, the periphery of the power semiconductor device 100a is surrounded by a housing 8, the inside of the housing 8 is covered with a sealing resin 10, and the external electrodes 7 and control terminals 12 integrally formed with the housing 8 perform electrical input and output with the outside, and are therefore extended and exposed in a manner that can be connected to the outside.

[0025] like Figure 2 As shown, the power semiconductor device 100 a includes a semiconductor element 1 , a heat dissipation fin 3 c , an internal electrode 4 , an external electrode 7 , a case 8 , and a sealing resin 10 .

[0026] The heat sink fin 3c and the housing 8 are bonded and fixed at the peripheral portion of the heat sink fin 3c by an adhesive 9. In addition, the lower surface of the semiconductor element 1 is bonded to the circuit pattern 3a provided on the heat sink fin 3c via the bonding material 2a, and the circuit pattern 3a is arranged in parallel with the semiconductor element 1. The upper surface of the semiconductor element 1 is bonded to the internal electrode 4 via the bonding material 2c, and the internal electrode 4 is arranged in parallel with the semiconductor element 1. The internal electrode 4 and the external electrode 7 are bonded via the bonding material 2d. Here, the lower surface of the semiconductor element 1 is the surface on the side of the circuit pattern 3a provided on the heat sink fin 3c, and the upper surface of the semiconductor element 1 refers to the surface on the side of the internal electrode 4 of the semiconductor element 1.

[0027] like Figure 2As shown, an insulating layer 3b is provided on the heat dissipation fin 3c, and a circuit pattern 3a is provided on the surface of the insulating layer 3b opposite to the heat dissipation fin 3c. The heat dissipation fin 3c, the insulating layer 3b and the circuit pattern 3a are arranged in parallel and integrated, and have the function of serving as a cooler for dissipating heat from the heat-generating semiconductor element 1.

[0028] The heat dissipation fin 3c is a metal having excellent thermal conductivity including any one of Cu or Al, and the thickness including the protruding fin is 8 to 15 mm. The insulating layer 3b includes any one of aluminum nitride (AlN) or silicon nitride (Si3N4), and the thickness is 0.1 to 0.8 mm. The circuit pattern 3a is a conductive material including any one of Cu or Al, and the thickness is 0.2 to 1.5 mm.

[0029] In addition, the insulating layer 3b may be an epoxy resin to which a filler including BN or Al2O3 is added. The thermal conductivity is 6 to 18 W / (m·K), which can meet the heat dissipation specifications required for the power semiconductor device 100a.

[0030] The semiconductor element 1 is a so-called power semiconductor element that controls electric power. For example, as a material, it includes Si or a wide-bandgap semiconductor having a larger bandgap than Si. Examples of wide-bandgap semiconductors include SiC, GaN, diamond, etc. The semiconductor element 1 is, for example, an IGBT (Insulated Gate Bipolar Transistor), a MOSFET (Metal Oxide Semiconductor Field Effect Transistor), a Schottky barrier diode, etc. In addition, for example, the semiconductor element 1 may also be an RC-IGBT (Reverse Conducting IGBT) in which an IGBT and a freewheeling diode are integrated into one semiconductor chip.

[0031] like Figure 2 and Figure 3 As shown, at least one semiconductor element 1 is mounted. A required number of semiconductor elements 1 can be mounted according to the specifications of the power semiconductor device 100a.

[0032] In addition, the bonding material 2a that bonds the semiconductor element 1 to the circuit pattern 3a is a conductive metal containing Sn, which is a so-called solder. In addition, since the semiconductor element 1 generates heat, the bonding material 2a is not limited to solder, and can also be a sintered material containing metal particles such as Ag or Cu with heat dissipation properties, which has a greater thermal conductivity than solder.

[0033] Furthermore, in particular, when the bonding material 2a is solder, in order to ensure wettability with the solder, at least a portion of the surface of the circuit pattern 3a that is bonded to the bonding material 2a may be plated with Ni.

[0034] The housing 8 includes either PPS (Poly Phenylene Sulfide) resin or PBT (Poly Butylene Terephthalate) resin.

[0035] like Figure 2 and Figure 3 As shown, the external electrode 7 is made of Cu or a material containing Cu, and is integrated with the housing 8 by insert molding, and a part of the external electrode 7 is buried in the housing 8. Figure 2 As shown, the external electrode 7 is curved, and one front end of the external electrode 7 performs electrical input and output with the outside, so it is exposed from the housing 8. The other front end of the external electrode 7 is arranged in parallel with the flat plate-shaped portion 4a of the internal electrode 4 in the direction toward the inside of the housing 8 when viewed from above, and protrudes and is exposed in a flat surface.

[0036] like Figure 2 and Figure 3 As shown, the internal electrode 4 is made of Cu or a material containing Cu, and includes a flat plate-shaped portion 4a arranged in parallel with the semiconductor element 1. The thickness of the internal electrode 4 is a uniform thickness of 0.5 to 1.2 mm so that a large current can flow. The internal electrode 4 is arranged parallel to the semiconductor element 1, the circuit pattern 3a, and the external electrode 7, and is bonded to the upper surface of the semiconductor element 1, the circuit pattern 3a, and the external electrode 7.

[0037] In the internal electrode 4, a through hole 6 is formed in the thickness direction of the flat plate portion 4a of the internal electrode 4. An embossed portion 11 is formed around the through hole 6 by punching or the like, and the embossed portion 11 is provided with a step of about 0.5 mm protruding toward the semiconductor element 1 side.

[0038] The upper surface of the semiconductor element 1 has an electrode (not shown), and the upper surface of the semiconductor element 1, the through hole 6 of the internal electrode 4, and the embossed portion 11 provided around the through hole 6 are bonded via the bonding material 2c. The embossed portion 11 can ensure solder wettability because the solder fully wets and spreads relative to the internal electrode 4, especially when the bonding material 2c is solder. The bonding thickness of the bonding material 2c is 0.2 to 1.0 mm.

[0039] In addition, if Figure 2 and Figure 3 As shown, at the internal electrode 4, a pair of support portions 4b bent toward the circuit pattern 3a and having an inclined shape are formed at one front end portion and the other front end portion, and one front end portion and the other front end portion of the internal electrode 4 are joined to the circuit pattern 3a via a bonding material 2b.

[0040] Thus, the internal electrode 4 can be stably supported and fixed relative to the circuit pattern 3a by a pair of support portions 4b provided at one front end portion and the other front end portion of the internal electrode 4. Therefore, the thickness of the bonding material 2c between the upper surface of the semiconductor element 1 and the internal electrode 4 can be ensured. Figure 2 and Figure 3 As shown, the same internal electrode 4 bonded to the upper surfaces of the plurality of semiconductor elements 1 can easily ensure the bonding thickness of the bonding material 2c at the upper surface of each semiconductor element 1 to obtain good bonding, and suppress the thermal stress and thermal strain of the bonding material 2c generated in the use environment of the power semiconductor device 100a. Therefore, high-quality bonding can be obtained, and the reliability of the bonding material 2c is improved.

[0041] In addition, the bonding material 2c may be filled into the through hole 6 from the upper surface of the semiconductor element 1, and may also bond to the upper surface of the embossed portion 11 to cover it, for example, to be convex and bulge in a dome shape. The upper side of the embossed portion 11 refers to the surface of the embossed portion 11 on the opposite side of the semiconductor element 1. In this way, the thermal stress and thermal strain generated by the bonding material 2c can be further alleviated.

[0042] In addition, a pair of curved and inclined support portions 4b are formed at one front end and the other front end of the internal electrode 4. Since one front end and the other front end of the internal electrode 4 are bonded to the circuit pattern 3a via the bonding material 2b, the heat-generating semiconductor element 1 can be dissipated uniformly and efficiently from the upper surface of the semiconductor element 1 to the circuit pattern 3a, the insulating layer 3b, and the heat dissipation fins 3c via the internal electrode 4, in addition to the heat dissipation to the lower surface of the semiconductor element 1, without causing heat concentration. In addition, the circuit pattern 3a includes the circuit pattern 3a without the semiconductor element 1. As a result, the heat dissipation of the heat-generating semiconductor element 1 can be improved.

[0043] Moreover, the heat generated by the large current flowing through the internal electrode 4 can also be uniformly and efficiently dissipated from the internal electrode 4 to the insulating layer 3b and the heat dissipation fins 3c through the circuit pattern 3a, without causing the heat to be concentrated. In addition, the circuit pattern 3a includes the circuit pattern 3a without the semiconductor element 1. Thus, the heat dissipation of the internal electrode 4 that generates heat can be improved. Therefore, the semiconductor element 1 is prevented from becoming high temperature, so that it can operate stably.

[0044] like Figure 2 and Figure 3As shown, the internal electrode 4 is bonded to the external electrode 7 via the bonding material 2d. Therefore, unlike Patent Document 1, the internal electrode 4 is not integrated with the housing 8 by insert molding, so the bonding thickness of the bonding material 2c on the upper surface of the semiconductor element 1 can be ensured, and the thermal stress and thermal strain of the bonding material 2c can be alleviated. In addition, the heat generated by the semiconductor element 1 and the internal electrode 4 can be dissipated to the outside connected to the external electrode 7.

[0045] In addition, the bonding materials 2b, 2c and 2d are conductive metals containing Sn, which are so-called solders. In addition, since the semiconductor element 1 generates heat, the bonding materials 2b, 2c and 2d are not limited to solders, but may be sintered materials containing metal particles such as Ag or Cu having heat dissipation properties and having a thermal conductivity greater than that of solder.

[0046] In addition, especially when the bonding material 2b, the bonding material 2c and the bonding material 2d are solder, in order to ensure wettability with the solder, Ni plating can be performed on at least a portion of the surface of the circuit pattern 3a, the internal electrode 4 and the external electrode 7 that are bonded to the bonding material 2b, the bonding material 2c and the bonding material 2d.

[0047] like Figure 3 As shown, the control terminal 12 is made of Cu or a material containing Cu, and is integrated with the housing 8 by insert molding, and a portion of the control terminal 12 is embedded in the housing 8. A front end portion of the control terminal 12 is exposed and extends from the housing 8 for electrical input and output to the outside. Figure 3 As shown, the other end portion of the control terminal 12 is exposed from the housing 8 and is electrically connected to the semiconductor element 1 via a metal wire 13. The metal wire 13 is made of a material containing either Al or Cu. The diameter of the metal wire 13 is 0.1 to 0.5 mm.

[0048] like Figure 2 As shown, the encapsulation resin 10 is filled into the area surrounded by the shell 8 for encapsulation. In other words, the encapsulation resin 10 is filled into the surface of the insulating layer 3b and the circuit pattern 3a on the side where the semiconductor element 1 is mounted, that is, around the semiconductor element 1, the internal electrode 4 and the external electrode 7 located inside the shell 8 for encapsulation. The encapsulation resin 10 is a thermosetting epoxy resin to which a filler including SiO2 is added, but it is not limited to this, as long as it has the required elastic modulus, thermal conductivity, heat resistance, insulation and adhesion. For example, in addition to epoxy resin, it can also be a silicone resin, a phenolic resin, a polyimide resin, etc.

[0049] The housing 8 and the heat sink fins 3c are bonded and fixed by the adhesive 9, so when the encapsulation resin 10 is filled in the area surrounded by the housing 8, the encapsulation resin 10 can be prevented from leaking to the outside, and insulation can be ensured inside the power semiconductor device 100a. The adhesive 9 is a silicone resin. Alternatively, it can be the same material as the encapsulation resin 10.

[0050] In this way, by providing the through hole 6 and a pair of curved and inclined support portions 4b in the internal electrode 4, the support portion 4b of the internal electrode 4 is bonded to the circuit pattern 3a integrated with the heat dissipation fin 3c and the insulating layer 3b via the bonding material 2b, so that the internal electrode 4 can be stably supported and fixed relative to the circuit pattern 3a. As a result, the same internal electrode 4 bonded to the upper surfaces of the plurality of semiconductor elements 1 can easily ensure the bonding thickness of the bonding material 2c at the upper surface of each semiconductor element 1 to obtain good bonding, and the thermal stress and thermal strain of the bonding material 2c generated in the use environment of the power semiconductor device 100a can be suppressed. Therefore, high-quality bonding can be obtained, and the reliability of the bonding material 2c is improved.

[0051] In addition, for the semiconductor element 1 that generates heat, in addition to dissipating heat to the lower surface of the semiconductor element 1, the heat dissipation path is expanded from the upper surface of the semiconductor element 1 through the internal electrode 4 to the circuit pattern 3a, the insulating layer 3b, and the heat dissipation fins 3c, so that heat can be dissipated evenly and efficiently without concentrating heat. In addition, the circuit pattern 3a includes the circuit pattern 3a without the semiconductor element 1. As a result, the heat dissipation of the semiconductor element 1 that generates heat can be improved.

[0052] Moreover, similarly, for the heat generated by the large current flowing through the internal electrode 4, the heat dissipation path can be expanded from the internal electrode 4 to the insulating layer 3b and the heat dissipation fins 3c via the circuit pattern 3a, and the heat dissipation can be achieved in a balanced and efficient manner without heat concentration. In addition, the circuit pattern 3a includes the circuit pattern 3a without the semiconductor element 1. Thus, the heat dissipation of the internal electrode 4 that generates heat can be improved. Therefore, the semiconductor element 1 is suppressed from reaching a high temperature, so that it can operate stably.

[0053] Next, a method for manufacturing the power semiconductor device 100 a will be described.

[0054] Figure 4 This is a flowchart showing a method for manufacturing a power semiconductor device 100a in Embodiment 1. Here, an example of bonding by solder is shown, that is, an example in which bonding materials 2a, 2b, 2c, and 2d are solders is shown. Each process, namely steps S101 to S106, is described in detail.

[0055] In step S101, the lower surface of the semiconductor element 1 is bonded to the circuit pattern 3a by the bonding material 2a. The bonding material 2a is a paste solder or a plate solder. At this time, as for the bonding, the heat is heated by the heat conduction from the heat sink fin 3c and the hot air in the reflow soldering, and the bonding is completed after cooling. The heating temperature is 230 to 300°C to correspond to the melting point of the solder containing Sn. In addition, although the illustration is omitted, a special clamp is used to fix the mounting position of the semiconductor element 1 relative to the circuit pattern 3a.

[0056] In step S102, the internal electrode 4 having the through hole 6 and the embossed portion 11 is bonded to the upper surface of the semiconductor element 1 by the bonding material 2c, and the supporting portion 4b of the internal electrode 4 is bonded to the circuit pattern 3a by the bonding material 2b. The bonding material 2b and the bonding material 2c are paste solder or plate solder. The bonding material 2b and the bonding material 2c are the same material as the bonding material 2a, or a solder containing Sn having a composition with a lower melting point than the bonding material 2a. Similar to step S101, as far as bonding is concerned, heating is performed by heat conduction from the heat sink fin 3c and hot air in the reflow soldering, and the bonding is completed after cooling. In addition, although the illustration is omitted, a special clamp is used to fix the mounting position of the internal electrode 4.

[0057] Since the joint is heated by heat conduction from the heat sink fins 3c and the hot air in the reflow soldering, not only the semiconductor element 1 but also the bonding material 2b can be heated to the desired temperature through heat conduction. As a result, the bonding thickness of the bonding material 2c can be easily ensured at the upper surface of the semiconductor element 1, and a good joint can be obtained.

[0058] In step S103, adhesive 9 is applied to the periphery of the heat dissipation fin 3c, and the housing 8 is bonded to the heat dissipation fin 3c. The adhesive 9 containing silicone or the adhesive 9 of the same material as the encapsulation resin 10 is applied. After application, the adhesive 9 is cured by heating the bonding surface, and the heat dissipation fin 3c and the housing 8 can be bonded via the adhesive 9. As a result, in the process of injecting and filling the encapsulation resin 10 to perform resin sealing described later, the encapsulation resin 10 will not leak to the outside.

[0059] In step S104, the external electrode 7 is bonded to the internal electrode 4 through the bonding material 2d. Similar to step S101, as for bonding, the heat is heated by heat conduction from the heat sink fins 3c and the hot air in the reflow soldering, and the bonding is completed after cooling. Not only the semiconductor element 1, but also the heat conduction through the bonding material 2b can make the internal electrode 4, the external electrode 7 and the bonding material 2d rise to the desired temperature, and good bonding can be obtained. In addition, in the process of heating in order to bond the external electrode 7 to the internal electrode 4 through the bonding material 2d, the process of curing the adhesive 9 and bonding in step S103 can also be performed simultaneously. As a result, the external electrode 7 can be bonded to the internal electrode 4 through the bonding material 2d, and the heat sink fins 3c and the housing 8 can be bonded. Therefore, the number of heating processes can be suppressed, and productivity can be improved.

[0060] In step S105, the semiconductor element 1 and the control terminal 12 are wire-bonded by metal wires 13 made of a material including either Al or Cu to achieve wiring connection. The metal wires 13 are ultrasonically bonded to the semiconductor element 1 and the control terminal 12 by applying ultrasonic vibration while applying pressure to the metal wires 13 using an ultrasonic tool (not shown) to achieve wiring connection.

[0061] In step S106, the sealing resin 10 is injected and filled on the upper side of the insulating layer 3b and the circuit pattern 3a surrounded by the housing 8 so as to bury the semiconductor element 1, the internal electrode 4, and the external electrode 7 located inside the housing 8, and resin sealing is performed. After the resin sealing, the sealing resin 10 is cured by heating. Thus, the surrounding of the bonding portion of the bonding material 2a, the bonding material 2b, the bonding material 2c, the bonding material 2d, and the metal wire 13 is covered and fixed by the sealing resin, so that the insulation can be ensured and the reliability can be improved.

[0062] In this way, by providing the through hole 6 and a pair of curved and inclined support portions 4b in the internal electrode 4, the support portion 4b of the internal electrode 4 is bonded to the circuit pattern 3a integrated with the heat dissipation fin 3c and the insulating layer 3b via the bonding material 2b, so that the internal electrode 4 can be stably supported and fixed relative to the circuit pattern 3a. As a result, the same internal electrode 4 bonded to the upper surfaces of the plurality of semiconductor elements 1 can easily ensure the bonding thickness of the bonding material 2c at the upper surface of each semiconductor element 1, and good bonding can be obtained, and the thermal stress and thermal strain of the bonding material 2c generated in the use environment of the power semiconductor device 100a can be suppressed. Therefore, high-quality bonding can be obtained, and the reliability of the bonding material 2c can be improved.

[0063] In addition, for the semiconductor element 1 that generates heat, in addition to the heat dissipation to the lower surface of the semiconductor element 1, the heat dissipation path is expanded from the upper surface of the semiconductor element 1 through the internal electrode 4 to the circuit pattern 3a, the insulating layer 3b, and the heat dissipation fins 3c, so that the heat can be uniformly and efficiently dissipated without concentrating the heat. In addition, the circuit pattern 3a includes the circuit pattern 3a without the semiconductor element 1. As a result, the heat dissipation of the semiconductor element 1 that generates heat can be improved.

[0064] Moreover, similarly, for the heat generated by the large current flowing through the internal electrode 4, the heat dissipation path can be expanded from the internal electrode 4 to the insulating layer 3b and the heat dissipation fins 3c via the circuit pattern 3a, and the heat dissipation can be achieved in a balanced and efficient manner without heat concentration. In addition, the circuit pattern 3a includes the circuit pattern 3a without the semiconductor element 1. Thus, the heat dissipation of the internal electrode 4 that generates heat can be improved. Therefore, the semiconductor element 1 is suppressed from reaching a high temperature, so that it can operate stably.

[0065] As a modified example of the method for manufacturing the power semiconductor device 100a in the first embodiment, Figure 5 The flow chart is shown in FIG. Figure 4 Similarly, here, an example of bonding by solder is shown, that is, an example in which the bonding materials 2a, 2b, 2c, and 2d are solders is shown. Each process, that is, steps S201 to S205, will be described in detail.

[0066] In step S201, a bonding process of bonding the lower surface of the semiconductor element 1 to the circuit pattern 3a by bonding material 2a, a bonding process of bonding the internal electrode 4 having the through hole 6 and the embossed portion 11 to the upper surface of the semiconductor element 1 by bonding material 2c, and a bonding process of bonding the supporting portion 4b of the internal electrode 4 to the circuit pattern 3a by bonding material 2b are simultaneously performed. At this time, as far as bonding is concerned, heating is performed by heat conduction from the heat sink fin 3c and hot air in the reflow soldering, and the bonding is completed after cooling. In addition, although the illustration is omitted, a special clamp is used to fix the mounting position of the semiconductor element 1 and the internal electrode 4. Therefore, the number of heating processes can be suppressed, and productivity can be improved.

[0067] In step S202, adhesive 9 is applied to the periphery of the heat dissipation fin 3c, and the housing 8 is bonded to the heat dissipation fin 3c. The adhesive 9 containing silicone or the adhesive 9 of the same material as the encapsulation resin 10 is applied. After application, the adhesive 9 is cured by heating the bonding surface, and the heat dissipation fin 3c and the housing 8 can be bonded via the adhesive 9. As a result, in the process of injecting and filling the encapsulation resin 10 to perform resin encapsulation described later, the encapsulation resin 10 will not leak to the outside.

[0068] In step S203, the external electrode 7 is bonded to the internal electrode 4 by the bonding material 2d. As in step S201, the bonding is performed by heating by heat conduction from the heat sink fins 3c and hot air in the reflow soldering, and the bonding is completed after cooling. In addition, in the process of heating in order to bond the external electrode 7 to the internal electrode 4 by the bonding material 2d, the process of curing the adhesive 9 for bonding in step S202 can also be performed simultaneously. As a result, the external electrode 7 can be bonded to the internal electrode 4 by the bonding material 2d, and the heat sink fins 3c and the housing 8 can be bonded. Therefore, the number of heating processes can be reduced, and productivity can be improved.

[0069] In step S204, the semiconductor element 1 and the control terminal 12 are wire-bonded by metal wires 13 made of a material including either Al or Cu to achieve wiring connection. The metal wires 13 are ultrasonically bonded to the semiconductor element 1 and the control terminal 12 by applying ultrasonic vibration while applying pressure to the metal wires 13 using an ultrasonic tool (not shown) to achieve wiring connection.

[0070] In step S205, the semiconductor element 1, the insulating layer 3b, and the circuit pattern 3a surrounded by the housing 8 are filled with the encapsulating resin 10 so as to bury the semiconductor element 1, the internal electrode 4, and the external electrode 7 located inside the housing 8, thereby performing resin encapsulation. After the resin encapsulation, the encapsulating resin 10 is cured by heating. Thus, the surrounding of the bonding portion of the bonding material 2a, the bonding material 2b, the bonding material 2c, the bonding material 2d, and the metal wire 13 is covered and fixed by the encapsulating resin, thereby ensuring insulation and improving reliability.

[0071] As a result, the number of times the reflow soldering is performed can be reduced, the heating time can be suppressed, the productivity can be improved, and the influence of warping of the structural components such as the heat dissipation fins 3c, the insulating layer 3b, the circuit pattern 3a, the semiconductor element 1, the internal electrode 4 and the external electrode 7 integrated with the shell 8 can be suppressed to a minimum.

[0072] In addition, Figure 4 and Figure 5 The flowchart shown shows an example in which bonding materials 2a, bonding materials 2b, bonding materials 2c and bonding materials 2d are solders, but they are not limited to solders and can also be sintered materials using metal particles including Ag or Cu with heat dissipation properties having a thermal conductivity greater than that of solder.

[0073] In the first embodiment, the semiconductor element 1 is bonded to the circuit pattern 3a integrated with the insulating layer 3b and the heat dissipation fins 3c, the housing 8 is bonded to the periphery of the heat dissipation fins 3c in a manner that surrounds the semiconductor element 1, the circuit pattern 3a and the insulating layer 3b, and the encapsulation resin 10 is encapsulated in the area surrounded by the insulating layer 3b, the circuit pattern 3a and the housing 8 in a manner that covers the periphery of the semiconductor element 1, the internal electrode 4 and the external electrode 7 located inside the housing 8. The external electrode 7 is provided, and the external electrode 7 is bonded to the internal electrode 4 via the bonding material 2d and is integrally formed with the housing 8.

[0074] The internal electrode 4 is configured to include a flat plate-shaped portion 4a, a through hole 6, and a pair of curved and inclined support portions 4b. The support portions 4b of the internal electrode 4 are bonded via a bonding material 2b, thereby enabling the internal electrode 4 to be stably supported and fixed relative to the circuit pattern 3a. As a result, the same internal electrode 4 bonded to the upper surfaces of the plurality of semiconductor elements 1 can easily ensure the bonding thickness of the bonding material 2c at the upper surfaces of the semiconductor elements 1 to obtain good bonding, and suppress the thermal stress and thermal strain of the bonding material 2c generated in the use environment of the power semiconductor device 100a. By setting the above structure, the bonding thickness can be ensured, high-quality bonding can be obtained, and the reliability of the bonding material 2c can be improved.

[0075] In addition, for the semiconductor element 1 that generates heat, in addition to dissipating heat to the lower surface of the semiconductor element 1, the heat dissipation path is expanded from the upper surface of the semiconductor element 1 through the internal electrode 4 to the circuit pattern 3a, the insulating layer 3b, and the heat dissipation fins 3c, so that heat can be dissipated evenly and efficiently without concentrating heat. In addition, the circuit pattern 3a includes the circuit pattern 3a without the semiconductor element 1. As a result, the heat dissipation of the semiconductor element 1 that generates heat can be improved.

[0076] Moreover, similarly, for the heat generated by the large current flowing through the internal electrode 4, the heat dissipation path can be expanded from the internal electrode 4 to the insulating layer 3b and the heat dissipation fins 3c via the circuit pattern 3a, and the heat dissipation can be achieved in a balanced and efficient manner without heat concentration. In addition, the circuit pattern 3a includes the circuit pattern 3a without the semiconductor element 1. Thus, the heat dissipation of the internal electrode 4 that generates heat can be improved. Therefore, the semiconductor element 1 is suppressed from reaching a high temperature, so that it can operate stably.

[0077] A pair of curved and inclined support portions 4b are formed at one front end portion and the other front end portion of the internal electrode 4, and the support portions 4b are bonded to the circuit pattern 3a via the bonding material 2b, but the support portions 4b are not limited to a pair, and three or more support portions 4b may be provided with respect to the same internal electrode 4. Thus, the internal electrode 4 can be further stably supported and fixed with respect to the circuit pattern 3a.

[0078] In addition, the present invention is not limited to a cooler in which the heat dissipation fins 3c, the insulating layer 3b, and the circuit pattern 3a are integrated. The heat dissipation fins 3c and the insulating layer 3b may be separate components, and the insulating layer 3b is provided with the circuit pattern 3a on the upper surface and the lower surface of the insulating layer 3b with respect to the thickness direction of the insulating layer 3b. In this case, the circuit pattern 3a provided on the insulating layer 3b is joined to the heat dissipation fins 3c.

[0079] The internal electrode 4 and the external electrode 7 are separate components. Since the internal electrode 4 and the external electrode 7, which are separate components, are bonded via the bonding material 2d, even if the heat sink 3c, the insulating layer 3b, the circuit pattern 3a, the semiconductor element 1, the internal electrode 4, the housing 8, and the external electrode 7 are warped due to repeated heating caused by multiple injections into the reflow soldering, the thermal stress and thermal strain generated by the bonding material 2c on the upper surface of the semiconductor element 1 can be alleviated.

[0080] Implementation Method 2

[0081] Figure 6 It is a plan view showing the appearance of a power semiconductor device 100 b according to the second embodiment. Figure 7 yes Figure 6 Cross-sectional view at line BB. Figure 8 1 is a top view showing the structure of the power semiconductor device 100b before being encapsulated by the encapsulation resin 10. Figure 8 It is also recorded that Figure 6 The position corresponding to the BB line of the embodiment. In addition, most of the structures of the power semiconductor device 100b in this embodiment are common to those in the embodiment 1. Therefore, the differences from the embodiment 1 are described, and the same or corresponding structures are marked with the same reference numerals and their descriptions are omitted. The difference from the embodiment 1 is the following structure, that is, Figure 7 and Figure 8 As shown, instead of the support portion 4b, the internal electrode 5 is in the shape of a flat plate as a whole, and has a support component 14 formed of a metal with high thermal conductivity. The semiconductor element 1 and the internal electrode 5 are arranged in parallel, and one end of the support component 14 is bonded to the circuit pattern 3a via a bonding material 2b, and the other end of the support component 14 is bonded to the internal electrode 5 via a bonding material 2e.

[0082] The internal electrode 5 is in a flat plate shape and is made of Cu or a material containing Cu. The thickness of the internal electrode 5 is a uniform thickness of 0.5 to 1.2 mm so that a large current can flow. The internal electrode 5 is arranged parallel to the semiconductor element 1, the circuit pattern 3a, and the external electrode 7, and is bonded to the upper surface of the semiconductor element 1, the support member 14, and the external electrode 7.

[0083] In addition, the internal electrode 5 has a through hole 6 formed in the thickness direction of the internal electrode 5. Around the through hole 6, an embossed portion 11 is formed by punching or the like, and the embossed portion 11 is provided with a step of about 0.5 mm protruding toward the semiconductor element 1 side.

[0084] The upper surface of the semiconductor element 1 has an electrode (not shown), and the upper surface of the semiconductor element 1, the through hole 6 of the internal electrode 5, and the embossed portion 11 provided around the through hole 6 are bonded via the bonding material 2c. The embossed portion 11 can ensure solder wettability because the solder fully wets and spreads relative to the internal electrode 5, especially when the bonding material 2c is solder. The bonding thickness of the bonding material 2c is 0.2 to 1.0 mm.

[0085] The support member 14 is a metal having a high thermal conductivity. For example, it is a metal material containing any of Cu and Al. Figure 7 and Figure 8 As shown, the supporting member 14 is provided with a pair of supporting members 14 at one end and the other end of the internal electrode 5. The pair of supporting members 14 joined to the circuit pattern 3a via the joining material 2b are joined to one end and the other end of the internal electrode 5 via the joining material 2e.

[0086] In addition, the support member 14 is formed into a rectangular parallelepiped shape with the largest possible size corresponding to the circuit pattern 3a of the internal electrode 5 and the size of the internal electrode 5. In addition, the support member 14 is not limited to a rectangular parallelepiped, and may be formed in a shape having a curved portion such as an S-shape with respect to the direction between the internal electrode 5 and the circuit pattern 3a, or may be formed in a shape in which the width of both ends of the support member 14 is different from the width of the central portion. Thus, the internal electrode 5 can be stably supported and fixed with respect to the circuit pattern 3a, and the heat capacity is increased, and the heat dissipation can be improved.

[0087] The bonding material 2b for bonding the support member 14 to the circuit pattern 3a and the bonding material 2e for bonding the support member 14 to the internal electrode 5 are conductive metals containing Sn, which are so-called solders. In addition, since the internal electrode 5 generates heat due to the large current flowing therethrough, the bonding material 2a is not limited to solder, and may be a sintered material containing metal particles such as Ag or Cu having heat dissipation properties and having a thermal conductivity greater than that of solder.

[0088] In particular, when the bonding materials 2b and 2e are solder, in order to ensure wettability with the solder, at least a portion of the surfaces of the circuit pattern 3a and the internal electrode 5 that are bonded to the bonding materials 2b and 2e may be plated with Ni.

[0089] Next, a method for manufacturing the power semiconductor device 100 b will be described.

[0090] Fig. 9 1 is a flowchart showing a method for manufacturing a power semiconductor device 100b in Embodiment 2. Here, an example of bonding by solder is shown, that is, an example in which bonding materials 2a, 2b, 2c, 2d, and 2e are solders is shown. Each process, namely steps S301 to S305, is described in detail.

[0091] In step S301, the lower surface of the semiconductor element 1 is bonded to the circuit pattern 3a by the bonding material 2a, and one end of the support component 14 is bonded to the circuit pattern 3a by the bonding material 2b. The bonding material 2a and the bonding material 2b are paste solder or plate solder. At this time, as far as the bonding is concerned, the heat is heated by the heat conduction from the heat sink fins 3c and the hot air in the reflow soldering, and the bonding is completed after cooling. The heating temperature is 230 to 300°C to correspond to the melting point of the solder containing Sn. In addition, although the illustration is omitted, a special clamp is used to fix the mounting position of the semiconductor element 1 and the support component 14 relative to the circuit pattern 3a.

[0092] In step S302, the internal electrode 5 having the through hole 6 and the embossed portion 11 is bonded to the upper surface of the semiconductor element 1 by the bonding material 2c, and the other end of the support member 14 is bonded to the internal electrode 5 by the bonding material 2e. The bonding material 2c and the bonding material 2e are paste solder or plate solder. The bonding material 2c and the bonding material 2e are the same material as the bonding material 2a, or solder containing Sn having a composition with a lower melting point than the bonding material 2a. Similar to step S301, as far as bonding is concerned, heating is performed by heat conduction from the heat sink fin 3c and hot air in the reflow soldering, and the bonding is completed after cooling. In addition, although the illustration is omitted, a special clamp is used to fix the mounting position of the internal electrode 5.

[0093] Since the joint is heated by heat conduction from the heat sink fins 3c and the hot air in the reflow soldering, the internal electrode 5 and the joint material 2c can be heated to a desired temperature by heat conduction not only through the semiconductor element 1 but also through the joint material 2b. As a result, the joint thickness of the joint material 2c can be easily ensured at the upper surface of the semiconductor element 1, and a good joint can be obtained.

[0094] In step S303, adhesive 9 is applied to the periphery of the heat dissipation fin 3c, and the housing 8 is bonded to the heat dissipation fin 3c. The adhesive 9 containing silicone or the adhesive 9 of the same material as the encapsulation resin 10 is applied. After application, the adhesive 9 is cured by heating the bonding surface, and the heat dissipation fin 3c and the housing 8 can be bonded via the adhesive 9. As a result, in the process of injecting and filling the encapsulation resin 10 to perform resin sealing described later, the encapsulation resin 10 will not leak to the outside.

[0095] In step S304, the external electrode 7 is bonded to the internal electrode 5 through the bonding material 2d. Similar to step S301, as for bonding, the heat is heated by the heat conduction from the heat sink fin 3c and the hot air in the reflow soldering, and the bonding is completed after cooling. Not only the semiconductor element 1, but also the heat conduction through the bonding material 2b can make the internal electrode 5, the external electrode 7 and the bonding material 2d rise to the desired temperature, and good bonding can be obtained. In addition, in the process of heating in order to bond the external electrode 7 to the internal electrode 5 through the bonding material 2d, the process of curing the adhesive 9 and bonding in step S303 can also be performed simultaneously. As a result, the external electrode 7 can be bonded to the internal electrode 5 through the bonding material 2d, and the heat sink fin 3c and the housing 8 can be bonded. Therefore, the number of heating processes can be suppressed, and productivity can be improved.

[0096] In step S305, the semiconductor element 1 and the control terminal 12 are wire-bonded by metal wires 13 made of a material including either Al or Cu to achieve wiring connection. The metal wires 13 are ultrasonically bonded to the semiconductor element 1 and the control terminal 12 by applying ultrasonic vibration while applying pressure to the metal wires 13 using an ultrasonic tool (not shown) to achieve wiring connection.

[0097] In step S306, the sealing resin 10 is injected and filled on the upper side of the insulating layer 3b and the circuit pattern 3a surrounded by the housing 8 so as to bury the semiconductor element 1, the internal electrode 5, and the external electrode 7 located inside the housing 8, and resin sealing is performed. After the resin sealing, the sealing resin 10 is cured by heating. Thus, the surrounding of the bonding part of the bonding material 2a, the bonding material 2b, the bonding material 2c, the bonding material 2d, the bonding material 2e, and the metal wire 13 is covered and fixed by the sealing resin, so that the insulation can be ensured and the reliability can be improved.

[0098] In the second embodiment, the semiconductor element 1 is bonded to the circuit pattern 3a integrated with the insulating layer 3b and the heat sink fins 3c, the housing 8 is bonded to the periphery of the heat sink fins 3c in a manner that surrounds the semiconductor element 1, the circuit pattern 3a and the insulating layer 3b, and the encapsulation resin 10 is encapsulated in the area surrounded by the insulating layer 3b, the circuit pattern 3a and the housing 8 in a manner that covers the periphery of the semiconductor element 1, the internal electrode 5 and the external electrode 7 located inside the housing 8. The external electrode 7 is provided, and the external electrode 7 is bonded to the internal electrode 5 via the bonding material 2d and is integrally formed with the housing 8.

[0099] The internal electrode 5 is in the shape of a flat plate and is provided with a through hole 6. One end of the support member 14 is bonded to the circuit pattern 3a via the bonding material 2b, and the other end of the support member 14 is bonded to the internal electrode 5 via the bonding material 2e, so that the internal electrode 5 can be stably supported and fixed relative to the circuit pattern 3a. As a result, the same internal electrode 5 bonded to the upper surface of the plurality of semiconductor elements 1 can easily ensure the bonding thickness of the bonding material 2c at the upper surface of each semiconductor element 1 to obtain good bonding, and suppress the thermal stress and thermal strain of the bonding material 2c generated in the use environment of the power semiconductor device 100b. By setting the above structure, the bonding thickness can be ensured, high-quality bonding can be obtained, and the reliability of the bonding material 2c can be improved.

[0100] In addition, for the semiconductor element 1 that generates heat, in addition to dissipating heat to the lower surface of the semiconductor element 1, the heat dissipation path is expanded from the upper surface of the semiconductor element 1 through the internal electrode 5 and the support member 14 to the circuit pattern 3a, the insulating layer 3b, and the heat dissipation fins 3c, so that heat can be dissipated evenly and efficiently without concentrating heat. In addition, the circuit pattern 3a includes the circuit pattern 3a without the semiconductor element 1. As a result, the heat dissipation of the semiconductor element 1 that generates heat can be improved.

[0101] Moreover, similarly, for the heat generated by the large current flowing through the internal electrode 5, the heat dissipation path can be expanded from the internal electrode 5 to the insulating layer 3b and the heat dissipation fins 3c via the support member 14 and the circuit pattern 3a, and the heat dissipation can be achieved in a balanced and efficient manner without heat concentration. In addition, the circuit pattern 3a includes the circuit pattern 3a without the semiconductor element 1. Thus, the heat dissipation of the internal electrode 5 that generates heat can be improved. Therefore, the semiconductor element 1 is suppressed from reaching a high temperature, so that it can operate stably.

[0102] In addition, if Figure 7 and Figure 8As shown in the figure, a pair of support members 14 are bonded to one front end portion and the other front end portion of the internal electrode 5 via the bonding material 2e, but the support members 14 are not limited to a pair, and three or more support members 14 may be bonded to the same internal electrode 5 and bonded to the circuit pattern 3a. In this way, the internal electrode 5 can be further stably supported and fixed relative to the circuit pattern 3a.

[0103] The support member 14 only needs to have a thermal conductivity that can raise the temperature of the bonding material 2 c , the internal electrode 5 , and the external electrode 7 to a desired temperature by reflow, and may be a material with a reduced elastic modulus or have a spring property.

[0104] In order to prevent the circuit pattern 3a, the internal electrode 5, and the external electrode 7 from being oxidized due to heating, the reflow process may be performed in a reducing environment.

[0105] Implementation 3

[0106] This embodiment applies the power semiconductor device 100a or 100b according to the above-mentioned Embodiments 1 and 2 to a power conversion device. This embodiment is not limited to a specific power conversion device, but the case of applying to a three-phase inverter will be described below as Embodiment 3.

[0107] Fig.10 2 is a block diagram showing a configuration of a power conversion system to which the power conversion device 200 according to the present embodiment is applied.

[0108] Fig.10 The power conversion system shown is composed of a power supply 101, a power conversion device 200, and a load 300. The power supply 101 is a DC power supply, and supplies DC power to the power conversion device 200. The power supply 101 can be composed of various power supplies, for example, it can be composed of a DC system, a solar cell, a storage battery, or a rectifier circuit connected to an AC system, or an AC / DC converter. In addition, the power supply 101 can also be composed of a DC / DC converter that converts the DC power output from the DC system into a predetermined power.

[0109] The power conversion device 200 is a three-phase inverter connected between the power source 101 and the load 300, converts the DC power supplied and input from the power source 101 into AC power, and supplies the AC power to the load 300. Fig.10 As shown, the power conversion device 200 includes: a main conversion circuit 201, which converts DC power into AC power and outputs it; a drive circuit 202, which outputs a drive signal for driving each switching element of the main conversion circuit 201; and a control circuit 203, which outputs a control signal for controlling the drive circuit 202 to the drive circuit 202.

[0110] Load 300 is a three-phase motor driven by AC power supplied from power converter 200. Load 300 is not limited to a specific use, and is a motor mounted on various electrical devices, for example, a motor for hybrid vehicles, electric vehicles, railway vehicles, elevators, or air conditioners.

[0111] The details of the power conversion device 200 are described below. The main conversion circuit 201 has a switching element and a freewheeling diode (not shown), and converts the DC power supplied from the power supply 101 into AC power by turning the switching element on and off, and supplies it to the load 300. The specific circuit structure of the main conversion circuit 201 is various, but the main conversion circuit 201 involved in this embodiment is a two-level three-phase full-bridge circuit, which can be composed of 6 switching elements and 6 freewheeling diodes respectively connected in anti-parallel with the switching elements. The power semiconductor device involved in any of the above-mentioned embodiments 1 to 2 is applied to each switching element of the main conversion circuit 201. In addition, the case where it is composed of the power semiconductor device 100a involved in embodiment 1 is described here. The 6 switching elements are connected in series two by two to form upper and lower bridge arms, and each upper and lower bridge arm constitutes each phase (U phase, V phase, W phase) of the full bridge circuit. In addition, the output terminals of each upper and lower bridge arm, that is, the three output terminals of the main conversion circuit 201 are connected to the load 300.

[0112] The drive circuit 202 generates a drive signal for driving the switch element of the main conversion circuit 201, and supplies it to the control electrode of the switch element of the main conversion circuit 201. Specifically, according to the control signal from the control circuit 203 described later, the drive signal for turning the switch element into the on state and the drive signal for turning the switch element into the off state are output to the control electrode of each switch element. When the switch element is maintained in the on state, the drive signal is a voltage signal (on signal) greater than or equal to the threshold voltage of the switch element, and when the switch element is maintained in the off state, the drive signal is a voltage signal (off signal) less than or equal to the threshold voltage of the switch element.

[0113] The control circuit 203 controls the switching elements of the main conversion circuit 201 to supply the desired power to the load 300. Specifically, the time (on time) at which each switching element of the main conversion circuit 201 should be in the on state is calculated based on the power to be supplied to the load 300. For example, the main conversion circuit 201 can be controlled by PWM control that modulates the on time of the switching element corresponding to the voltage to be output. In addition, the control instruction (control signal) is output to the drive circuit 202 so that the on signal is output to the switching element that should be in the on state and the off signal is output to the switching element that should be in the off state at each moment. The drive circuit 202 outputs the on signal or the off signal as a drive signal to the control electrode of each switching element according to the control signal.

[0114] In the power conversion device 200 according to the present embodiment, since the power semiconductor device according to the first embodiment is used as a switching element of the main conversion circuit 201, it is possible to improve reliability.

[0115] In this embodiment, a two-level power conversion device 200 is described, but this embodiment is not limited thereto and can be applied to various power conversion devices. In this embodiment, a two-level power conversion device 200 is used, but a three-level or multi-level power conversion device can also be used. In the case of supplying power to a single-phase load, the present embodiments 1 and 2 can also be applied to a single-phase inverter. In addition, in the case of supplying power to a DC load, etc., the present embodiments 1 and 2 can also be applied to a DC / DC converter or an AC / DC converter.

[0116] In addition, the power conversion device 200 applying embodiments 1 to 2 is not limited to the case where the above-mentioned load is an electric motor. For example, it can also be used as a power supply device for an electric discharge machine, a laser processing machine, an induction heating cooker, or a contactless power supply system, and can also be used as a power conditioner for a solar power generation system, a power storage system, etc.

[0117] Furthermore, the various embodiments may be freely combined, and the various embodiments may be appropriately modified or omitted.

[0118] Description of the label

[0119] 1 Semiconductor components

[0120] 3a Circuit pattern

[0121] 3b Insulation layer

[0122] 3c heat sink fins

[0123] 4.5 Internal electrodes

[0124] 4a Flat plate shape

[0125] 4b Support

[0126] 6 Through holes

[0127] 7 External electrodes

[0128] 8 Housing

[0129] 10. Encapsulation resin

[0130] 11 Embossing Department

[0131] 12 Control terminals

[0132] 13 Metal wire

[0133] 14 Support components

[0134] 100a, 100b Power semiconductor device

[0135] 200 Power conversion device

[0136] 201 Main conversion circuit

[0137] 202 drive circuit

[0138] 203 Control Circuit

Claims

1. A power semiconductor device, comprising: Semiconductor components; a circuit pattern on which the semiconductor element is mounted; an insulating layer carrying the circuit pattern; a heat dissipation fin, which is equipped with the insulating layer; A housing, which is bonded to the periphery of the heat dissipation fins and surrounds the semiconductor element, the circuit pattern and the insulating layer; A packaging resin packaged in a region surrounded by the insulating layer, the circuit pattern, and the housing; an internal electrode joined to the semiconductor element and the circuit pattern, the internal electrode including a flat plate-shaped portion, the internal electrode having a pair of supporting portions; and an external electrode, which is joined to the internal electrode and is integrally formed with the housing, The support portion is formed of metal, and one end of the support portion is bonded to the circuit pattern, and the other end of the support portion is bonded to the internal electrode in such a manner that the semiconductor element is arranged in parallel with the flat plate-shaped portion of the internal electrode. The support portions are provided at one front end portion and the other front end portion of the internal electrode, respectively.

2. The power semiconductor device according to claim 1, wherein: The internal electrode is bonded to at least one of the semiconductor elements.

3. The power semiconductor device according to claim 1 or 2, wherein: The support portion is bonded to the circuit pattern on which the semiconductor element is not mounted.

4. The power semiconductor device according to claim 1 or 2, wherein: A through hole is provided in the flat plate-shaped portion of the internal electrode, an embossed portion is provided around the through hole, and the through hole, the embossed portion, and the semiconductor element are bonded together.

5. The power semiconductor device according to claim 4, wherein: Regarding the bonding between the through hole, the embossed portion, and the semiconductor element, bonding is also performed on the surface of the embossed portion on the opposite side to the semiconductor element, and the surface is covered in a convex shape.

6. The power semiconductor device according to claim 4, wherein: Any of the bonding between the semiconductor element and the circuit pattern, the bonding between the support portion and the circuit pattern, the bonding between the through hole, the embossed portion and the semiconductor element, and the bonding between the internal electrode and the external electrode is any of a solder containing Sn or a sintered material formed by metal particles.

7. A power conversion device, comprising: A main conversion circuit, comprising a power semiconductor device according to any one of claims 1 to 6, wherein the main conversion circuit converts input power and outputs the input power; a driving circuit that outputs a driving signal for driving the power semiconductor device to the power semiconductor device; as well as A control circuit outputs a control signal for controlling the drive circuit to the drive circuit.

8. A method for manufacturing a power semiconductor device, comprising the following steps: Joining a semiconductor element to a circuit pattern mounted on a heat sink fin via an insulating layer, and joining a pair of supporting members to the circuit pattern; Joining the semiconductor element to an internal electrode including a flat plate-shaped portion, and joining the support member to the internal electrode; Bonding the heat dissipation fins to the housing; joining the internal electrode to an external electrode integrally formed with the housing; Conducting wire bonding between the semiconductor element and the control terminal integrally formed with the housing by metal wires to implement wiring connection; as well as The area surrounded by the insulating layer, the circuit pattern and the housing is sealed with resin. The support member is formed of metal, one end of the support member is bonded to the circuit pattern, and the other end of the support member is bonded to the internal electrode in such a manner that the semiconductor element is arranged in parallel with the flat plate-shaped portion of the internal electrode. The supporting members are provided at one front end portion and the other front end portion of the internal electrode, respectively.

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