Driving backplane and its fabrication method, display substrate and display device
By designing an interconnection structure of substrate, wires, protective layer and metal layer on the driving backplane, the problem of low electrical connection accuracy and reliability between the driving backplane and the light-emitting unit is solved, and high-precision and reliable electrical connection is achieved.
Patent Information
- Application Number
- CN202210901743.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2022-07-28
- Publication Date
- 2025-10-31
- Estimated Expiration
- 2042-07-28
AI Technical Summary
The electrical connection accuracy and reliability between the existing driving backplane and the light-emitting unit are relatively low.
A driving backplane structure is designed, including a substrate, wires, a protective layer, a first metal layer and a second metal layer. By forming multiple openings in the protective layer to expose the wires, and setting interconnection structures in the first metal layer and the second metal layer, a reliable electrical connection between the wires and the light-emitting unit is achieved.
The electrical connection accuracy and reliability between the drive backplate and the light-emitting unit have been improved, ensuring stable driving of the light-emitting unit.
Smart Images

Figure CN115224052B_ABST
Abstract
Description
Technical Field
[0001] This disclosure relates to the field of display technology, and in particular to a driving backplane and its preparation method, a display substrate and a display device. Background Technology
[0002] Currently, display substrates generally include a driving backplane and a light-emitting unit. The driving backplane is electrically connected to the light-emitting unit and is used to drive the light-emitting unit to emit light, thereby realizing the display.
[0003] The driving backplane typically includes: a glass substrate, a steel mesh template with multiple openings formed on one side of the glass substrate, and substrate circuitry and a self-assembly paste (SAP) layer sequentially stacked in each opening in a direction away from the glass substrate. The light-emitting unit contacts the SAP via a pad to electrically connect with the substrate circuitry on the SAP side. Furthermore, to achieve this electrical connection, flux is applied to the side of the pad closest to the driving backplane to ensure reliable soldering with the SAP in the driving backplane.
[0004] However, due to the limitations of the process and structure of the driving backplane, the accuracy and reliability of the electrical connection between the driving backplane and the light-emitting unit are currently low. Summary of the Invention
[0005] A driving backplane and its fabrication method, a display substrate, and a display device are provided, which can solve the problem of low electrical connection accuracy and reliability between the driving backplane and the light-emitting unit in related technologies. The technical solution is as follows:
[0006] On one hand, a drive backplane is provided, the drive backplane comprising:
[0007] substrate;
[0008] Multiple wires located on one side of the substrate and spaced apart along a direction parallel to the substrate bearing surface;
[0009] A protective layer located on the side of the plurality of conductors away from the substrate, the protective layer covering the sidewall of each conductor and having a plurality of first openings, wherein the orthographic projection of each first opening on the substrate overlaps with the orthographic projection of the corresponding conductor on the substrate, so as to expose the conductor;
[0010] A first metal layer located on the side of the protective layer away from the substrate, the first metal layer includes a plurality of first metal patterns spaced apart along a direction parallel to the substrate bearing surface, the orthographic projection of each first metal pattern on the substrate overlaps with the orthographic projection of a corresponding wire on the substrate, and each first metal pattern overlaps with the wire through a first opening exposing the wire.
[0011] A second metal layer is located on the side of the first metal layer away from the substrate. The second metal layer includes a plurality of second metal patterns spaced apart along a direction parallel to the substrate bearing surface. The orthographic projection of each second metal pattern on the substrate overlaps with the orthographic projection of a corresponding first metal pattern on the substrate, and each second metal pattern overlaps with a corresponding first metal pattern to form an interconnect structure for electrically connecting the wires and the light-emitting unit.
[0012] Optionally, in the first metal layer, each first metal pattern includes: a first metal portion, a second metal portion, and a third metal portion that are sequentially stacked and overlap each other in a direction away from the substrate;
[0013] The thickness of the third metal part is greater than the thickness of the second metal part, and the thickness of the second metal part is greater than or equal to the thickness of the first metal part.
[0014] Optionally, the material of the first metal part includes any one of molybdenum, molybdenum-titanium-nickel alloy, titanium, and titanium-tungsten, and the thickness of the first metal part is 200 angstroms to 500 angstroms;
[0015] The material of the second metal portion includes a nickel-containing alloy, and the thickness of the second metal portion is 300 angstroms to 500 angstroms;
[0016] The material of the third metal portion includes copper, and the thickness of the third metal portion is 3,000 to 5,000 angstroms.
[0017] Optionally, the orthographic projection of each first opening on the substrate lies within the orthographic projection of the corresponding wire on the substrate;
[0018] Each first metal pattern includes: a first portion located outside the first opening and a second portion located inside the first opening;
[0019] Furthermore, the first portion overlaps with the side of the protective layer away from the upper surface of the conductor, the upper surface of the conductor being the surface of the conductor away from the substrate; along the direction perpendicular to the substrate, the cross-section of the second portion has the same shape and size as the cross-section of the first opening.
[0020] Optionally, along the direction perpendicular to the substrate, the shape of the cross-section of the first opening and the shape of the cross-section of the second part of the first metal pattern are both inverted trapezoids, and the shape of the cross-section of the first part of the first metal pattern is a regular trapezoid.
[0021] Optionally, the material of the second metal layer includes tin, and the thickness of each second metal pattern in the second metal layer is positively correlated with the size of the electrically connected light-emitting unit.
[0022] Optionally, in the second metal layer, the thickness of each second metal pattern is 2 micrometers to 5 micrometers.
[0023] Optionally, the cross-sectional shape of the second metal pattern is trapezoidal along a direction perpendicular to the substrate.
[0024] Optionally, each wire includes: a seed layer and a growth layer stacked sequentially in a direction away from the substrate, wherein the cross-sectional shape of the seed layer and the cross-sectional shape of the growth layer are both trapezoidal in a direction perpendicular to the substrate;
[0025] Furthermore, the seed layer comprises: a first seed layer and a second seed layer sequentially stacked in a direction away from the substrate;
[0026] The first seed layer is made of a molybdenum-titanium-nickel alloy and has a thickness of 300 angstroms; the second seed layer and the growth layer are both made of copper and have a thickness of 3000 angstroms, respectively; the growth layer has a thickness of 3 micrometers to 10 micrometers. The protective layer is made of any one of resin, silicon nitride, and silicon oxide.
[0027] On the other hand, a method for manufacturing a display panel is provided, for manufacturing a driving backplane as described in the above aspect, the method comprising:
[0028] Provide substrate;
[0029] Multiple wires are formed on one side of the substrate, and the multiple wires are arranged at intervals along a direction parallel to the substrate bearing surface;
[0030] A protective layer is formed on the side of the plurality of conductors away from the substrate, and the protective layer covers the sidewall of each conductor and has a plurality of first openings, wherein the orthographic projection of each first opening on the substrate overlaps with the orthographic projection of the corresponding conductor on the substrate to expose the conductor.
[0031] A first metal layer is formed on the side of the protective layer away from the substrate, and the first metal layer includes a plurality of first metal patterns spaced apart along a direction parallel to the substrate bearing surface. The orthographic projection of each first metal pattern on the substrate overlaps with the orthographic projection of a corresponding wire on the substrate, and each first metal pattern overlaps with the wire through a first opening that exposes the wire.
[0032] A second metal layer is formed on the side of the first metal layer away from the substrate, and the second metal layer includes a plurality of second metal patterns spaced apart along a direction parallel to the substrate bearing surface. The orthographic projection of each second metal pattern on the substrate overlaps with the orthographic projection of a corresponding first metal pattern on the substrate, and each second metal pattern overlaps with a corresponding first metal pattern to form an interconnect structure for electrically connecting the wires and the light-emitting unit.
[0033] Optionally, forming a second metal layer on the side of the first metal layer away from the substrate includes:
[0034] A pattern defining layer is formed on the side of the first metal layer away from the substrate using a patterning process. The pattern defining layer has a plurality of second openings. The orthographic projection of each second opening on the substrate overlaps with the orthographic projection of a corresponding first opening on the substrate to expose the first metal pattern located within the first opening.
[0035] An additive method is used to electroplate a second metal pattern within each second opening to form a second metal layer comprising the plurality of second metal patterns;
[0036] Remove the pattern defining layer.
[0037] Optionally, forming a first metal layer on the side of the protective layer away from the substrate includes:
[0038] A first metal thin film is deposited on the side of the protective layer away from the substrate, and the orthographic projection of the first metal thin film on the substrate overlaps with the orthographic projection of the protective layer on the substrate;
[0039] After removing the pattern defining layer, the first metal film is wet etched to form a first metal layer including the plurality of first metal patterns;
[0040] Furthermore, forming a removable pattern defining layer on the side of the first metal layer away from the substrate includes: forming a removable pattern defining layer on the side of the first metal film away from the substrate.
[0041] In another aspect, a display substrate is provided, the display substrate comprising: a plurality of light-emitting units, and a driving backplate as described in the above aspect;
[0042] The driving backplate is electrically connected to the plurality of light-emitting units and is used to drive the plurality of light-emitting units to emit light.
[0043] Optionally, the light-emitting unit includes a mini light-emitting diode or a micro light-emitting diode.
[0044] In another aspect, a display device is provided, the display device comprising: a power supply component, and a display substrate as described in yet another aspect above;
[0045] The power supply component is electrically connected to the display substrate and is used to supply power to the display substrate.
[0046] In summary, the beneficial effects of the technical solutions provided by the embodiments of this disclosure can at least include:
[0047] A driving backplane and its fabrication method, a display substrate, and a display device are provided. The driving backplane includes: a substrate, multiple conductive lines located on one side of the substrate, and a protective layer, a first metal layer, and a second metal layer sequentially stacked on the side of the conductive lines away from the substrate. The protective layer has multiple openings exposing the conductive lines. The first metal layer includes multiple first metal patterns, and the second metal layer includes multiple second metal patterns. Each second metal pattern and a corresponding first metal pattern can form an interconnect structure to reliably electrically connect the conductive lines on the side of the first metal pattern closest to the substrate to light-emitting units subsequently formed on the side of the second metal pattern away from the substrate through the openings exposing the conductive lines, thereby driving the light-emitting units to emit light. Attached Figure Description
[0048] To more clearly illustrate the technical solutions in the embodiments of this disclosure, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this disclosure. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0049] Figure 1 This is a schematic diagram of the structure of a drive backplane provided in an embodiment of this disclosure;
[0050] Figure 2 This is a schematic diagram of another drive backplane provided in an embodiment of this disclosure;
[0051] Figure 3 This is a schematic diagram of the structure of a first metal layer provided in an embodiment of this disclosure;
[0052] Figure 4 This is a flowchart of a method for preparing a drive backplate according to an embodiment of this disclosure;
[0053] Figure 5 This is a schematic diagram of a substrate with conductive wires formed according to an embodiment of the present disclosure;
[0054] Figure 6 This is a schematic diagram of a substrate with a protective layer formed according to an embodiment of the present disclosure;
[0055] Figure 7 This is a schematic diagram of a substrate having a first metal layer formed according to an embodiment of the present disclosure;
[0056] Figure 8 This is a schematic diagram of a substrate with a second metal layer formed according to an embodiment of the present disclosure;
[0057] Figure 9 This is a schematic diagram of a substrate with a first metal thin film formed thereon, provided in an embodiment of this disclosure;
[0058] Figure 10 This is a process flow diagram of preparing a first metal pattern and a second metal pattern provided in an embodiment of this disclosure;
[0059] Figure 11 This is a schematic diagram of the structure of a display substrate provided in an embodiment of this disclosure;
[0060] Figure 12 This is a schematic diagram of the structure of a display device provided in an embodiment of this disclosure. Detailed Implementation
[0061] To make the objectives, technical solutions, and advantages of this disclosure clearer, the embodiments of this disclosure will be described in further detail below with reference to the accompanying drawings.
[0062] Figure 1 This is a schematic diagram of a drive backplane provided in an embodiment of this disclosure. Figure 1 As shown, the drive backplane includes:
[0063] Substrate 01.
[0064] Optionally, substrate 01 can be Figure 1 The glass substrate shown, i.e., substrate 01, can be made of glass, such as quartz glass or sapphire glass. Of course, in some other embodiments, substrate 01 can also be a flexible substrate, meaning that the material of substrate 01 can be a flexible material, such as polyimide (PI). Alternatively, substrate 01 can also be a silicon-based substrate, meaning that the material of substrate 01 can be a silicon-based material. Or, the substrate 01 may include multiple layers of films stacked sequentially, with each layer made of a different material.
[0065] Continue to refer to Figure 1 The drive backplate also includes: multiple wires 02 located on one side of the substrate 01 and arranged at intervals along the direction X1 parallel to the bearing surface of the substrate 01, that is, there may be a gap between each two adjacent wires 02.
[0066] It should be noted that, in combination Figure 1As can be seen, the bearing surface of the substrate 01 described in this embodiment of the present disclosure can refer to the upper surface of the substrate 01. Subsequently, other film layers can be formed on the upper surface of the substrate 01 to support these other film layers, hence it is referred to as the bearing surface of the substrate 01.
[0067] Continue to refer to Figure 1 The drive backplane also includes a protective layer 03 located on the side of the multiple wires 02 away from the substrate 01.
[0068] Among them, combined Figure 1 It can also be seen that the protective layer 03 covers the sidewall of each conductor 02 and has multiple first openings K1. The orthographic projection of each first opening K1 on the substrate 01 overlaps with the orthographic projection of the corresponding conductor 02 on the substrate 01 to expose the conductor 02. That is, the protective layer 03 may have multiple first openings K1 corresponding one-to-one with multiple conductors 02 to effectively expose the multiple conductors 02.
[0069] Furthermore, since the multiple conductive lines 02 are arranged at intervals, the protective layer 03 can also cover the portion of the substrate 01 located between any two adjacent conductive lines 02; that is, the protective layer 03 can also cover the portion of the substrate 01 not covered by the conductive lines 02. This protective layer 03 can effectively protect the conductive lines 02, preventing them from oxidizing due to prolonged exposure to air. Moreover, since an etching process is required after the protective layer 03 to form other film layers, covering the sidewalls of the conductive lines 02 with the protective layer 03 can also prevent the conductive lines 02 from being accidentally etched.
[0070] Continue to refer to Figure 1 The drive backplate also includes a first metal layer 04 located on the side of the protective layer 03 away from the substrate 01.
[0071] The first metal layer 04 includes a plurality of first metal patterns 041 arranged at intervals along a direction X1 parallel to the bearing surface of the substrate 01. The orthographic projection of each first metal pattern 041 on the substrate 01 overlaps with the orthographic projection of a corresponding wire 02 on the substrate 01, and each first metal pattern 041 is connected to a wire 02 through a first opening K1 that exposes a wire 02 (which may refer to an electrical connection). That is, the first metal layer 04 may include a plurality of first metal patterns 041 corresponding one-to-one with a plurality of wires 02, so as to be connected one-to-one with the plurality of wires 02 through a plurality of first openings K1 that expose the plurality of wires 02.
[0072] Continue to refer to Figure 1 The drive backplane also includes a second metal layer 05 located on the side of the first metal layer 04 away from the substrate 01.
[0073] The second metal layer 05 includes a plurality of second metal patterns 051 arranged at intervals along a direction X1 parallel to the bearing surface of the substrate 01. The orthographic projection of each second metal pattern 051 on the substrate 01 overlaps with the orthographic projection of a corresponding first metal pattern 041 on the substrate 01, and each second metal pattern 051 overlaps with a corresponding first metal pattern 041 to form an interconnect structure for electrically connecting the wires 02 and the light-emitting unit. That is, the second metal layer 05 may include a plurality of second metal patterns 051 corresponding one-to-one with the plurality of first metal patterns 041 to form a plurality of interconnect structures respectively corresponding one-to-one with the plurality of second metal patterns 051.
[0074] The interconnection structure refers to a structure that electrically connects different layers to enable signal transmission between them. For example, in the embodiments of this disclosure, the different layers may refer to the wires 02 in the driving backplane and the light-emitting units subsequently disposed on one side of the driving backplane.
[0075] As can be seen from the above embodiments, the wire 02 can be disposed on the side of the interconnect structure closer to the substrate 01, that is, the side of the first metal pattern 041 closer to the substrate 01. The light-emitting unit can be disposed on the side of the interconnect structure away from the substrate 01, that is, the side of the second metal pattern 051 away from the substrate 01. The wire 02 and the light-emitting unit can be electrically connected through the interconnect structure, and thus the wire 02 can transmit electrical signals to the light-emitting unit through the interconnect structure to light up the light-emitting unit. In this embodiment of the present disclosure, by setting the first metal layer 04 and the second metal layer 05 to form the interconnect structure, reliable interconnection between the light-emitting unit and the wire can be ensured, and the reliability of the electrical connection can be improved.
[0076] Optionally, in the embodiments of this disclosure, the "overlapping" of two structures can refer to overlapping, partial overlap, or one covering the other. For example, see reference... Figure 1 The orthographic projection of each first opening K1 on the substrate 01 is shown to lie within the orthographic projection of the corresponding wire 02 on the substrate 01. Furthermore, the orthographic projection of the second metal pattern 051 on the substrate 01 approximately overlaps with the orthographic projection of the first metal pattern 041 on the substrate 01.
[0077] In summary, this disclosure provides a driving backplane. The driving backplane includes: a substrate, multiple conductive lines located on one side of the substrate, and a protective layer, a first metal layer, and a second metal layer sequentially stacked on the side of the multiple conductive lines away from the substrate. The protective layer has multiple openings exposing the multiple conductive lines. The first metal layer includes multiple first metal patterns, and the second metal layer includes multiple second metal patterns. Each second metal pattern and a corresponding first metal pattern can form an interconnect structure to reliably electrically connect the conductive lines on the side of the first metal pattern closest to the substrate to the light-emitting unit subsequently formed on the side of the second metal pattern away from the substrate through the openings exposing the conductive lines, thereby driving the light-emitting unit to emit light.
[0078] In this embodiment, each pair of adjacent interconnecting structures formed by the first metal pattern 041 and the second metal pattern 051 can serve as a positive electrode (+) and a negative electrode (-), respectively, to electrically connect a light-emitting unit to two wires 02 via a positive electrode pad and a negative electrode pad, thereby reliably driving the light-emitting unit to emit light. Based on this, Figure 2 A schematic diagram of another drive backplate is shown.
[0079] in, Figure 2 Two adjacent conductors 02 located on one side of the substrate 01 are schematically shown. Correspondingly, the protective layer 03 shown has two first openings K1 exposing the two conductors 02. The first metal layer 04 includes two first metal patterns 041, and the two first metal patterns 041 overlap with the two conductors 02 through the two first openings K1 respectively. That is, one first metal pattern 041 overlaps with one conductor 02 through one first opening K1; the other first metal pattern 041 overlaps with the other conductor 02 through the other first opening K1. The second metal layer 05 includes two second metal patterns 051, and the two second metal patterns 051 are located on the side of the two first metal patterns 041 away from the substrate 01, and overlap with the two first metal patterns 041. Specifically, a second metal pattern 051 is located on the side of a first metal pattern 041 away from the substrate 01, overlapping with the first metal pattern 041 to form an interconnect structure; another second metal pattern 051 is located on the side of another first metal pattern 041 away from the substrate 01, overlapping with the other first metal pattern 041 to form another interconnect structure. Of these two interconnect structures, one interconnect structure can serve as the positive electrode, connecting a wire 02 to the light-emitting unit via a positive electrode pad; the other interconnect structure can serve as the negative electrode, connecting another wire 02 to the light-emitting unit via a negative electrode pad.
[0080] In addition, refer to Figure 2It can also be seen that each wire 02 described in this embodiment may include a seed layer 021 and a growth layer 022 sequentially stacked along a direction away from the substrate 01. The seed layer 021 can serve as a conductive substrate, and the growth layer 022 can be used to ensure that a sufficiently thick conductive layer with strong conductivity is successfully grown on the side of the seed layer 021 away from the substrate 01.
[0081] Optionally, in this embodiment of the present disclosure, the cross-sectional shape of the seed layer 021 and the cross-sectional shape of the growth layer 022 can both be in the direction perpendicular to the substrate 01. Figure 2 The shape shown is a regular trapezoid. Of course, in some other embodiments, it can also be other shapes, such as a rectangle or an inverted trapezoid.
[0082] An inverted trapezoid is a trapezoid whose upper base length is greater than its lower base length. A regular trapezoid is a trapezoid whose upper base length is less than its lower base length. The upper base is the side furthest from substrate 01, and the lower base is the side closest to substrate 01. The specific shape depends on the manufacturing process, which will be explained in detail in the following method examples.
[0083] Furthermore, the seed layer 021 may include a first seed layer (not shown in the figure) and a second seed layer (not shown in the figure) stacked sequentially in a direction away from the substrate 01.
[0084] The material of the first seed layer may include a molybdenum-titanium-nickel alloy MTD, and the thickness of the first seed layer may be 300 angstroms. Both the material of the second seed layer and the material of the growth layer 022 can include copper (Cu), and the thickness of the second seed layer can be [missing information]. That is, the thickness h1 of the seed layer 021 can be The thickness h3 of growth layer 022 can range from 3 micrometers (μm) to 10 μm. That is, the thickness h2 of growth layer 022 can be greater than or equal to 3 μm and less than or equal to 10 μm. For example, the thickness h2 of growth layer 022 can be 3 μm, 4 μm, 5 μm, 6 μm, 7 μm, 8 μm, 9 μm, or 10 μm. It should be noted that, combined with... Figure 2 The thickness direction here can be perpendicular to the bearing surface of substrate 01.
[0085] Of course, in some other embodiments, the material of the first seed layer may also include other types, such as molybdenum (Mo), and the thickness of the first seed layer may be other parameters, such as... Similarly, the materials for the second seed layer and the growth layer 022 can also be other highly conductive metallic materials. The thickness of the second seed layer can be... The descriptions of thickness and materials in the embodiments of this disclosure are merely illustrative and do not limit the solutions of the embodiments of this disclosure.
[0086] by Figure 1 and Figure 2 Taking the structure shown as an example, Figure 3 A schematic diagram of the structure of a first metal layer is shown. (See diagram below.) Figure 3 As shown, in the first metal layer 04 described in this embodiment, each first metal pattern 041 may include: a first metal portion 0411, a second metal portion 0412, and a third metal portion 0413, which are sequentially stacked and overlap each other along a direction away from the substrate 01. That is, each first metal pattern 041 may be formed by stacking three metal portions. It should be noted that overlapping may mean that the first metal portion 0411 overlaps with the second metal portion 0412, and the second metal portion 0412 overlaps with the third metal portion 0413.
[0087] Specifically, the thickness h5 of the third metal part 0413 can be greater than the thickness h4 of the second metal part 0412, and the thickness h4 of the second metal part 0412 can be greater than or equal to the thickness h3 of the first metal part 0411. It should be noted that, in conjunction with... Figure 3 The thickness direction here can also be a direction perpendicular to the bearing surface of substrate 01.
[0088] Optional, combined Figure 3 The thickness h3 of the first metal part 0411 can be 200 angstroms. to That is, the thickness h3 of the first metal part 0411 can be greater than or equal to and less than or equal to For example, the thickness h3 of the first metal part 0411 can be or The thickness h4 of the second metal part 0412 can be to That is, the thickness h4 of the second metal part 0412 can be greater than or equal to and less than or equal to For example, the thickness h4 of the second metal part 0412 can be or The thickness h5 of the third metal part 0413 can be to That is, the thickness h5 of the third metal part 0413 can be greater than or equal to and less than or equal to For example, the thickness h5 of the third metal part 0413 can be or
[0089] Optional, continue to refer to Figure 2In the second metal layer 05 described in this embodiment, the thickness h6 of each second metal pattern 051 can be positively correlated with the size of the electrically connected light-emitting unit. That is, the smaller the size of the electrically connected light-emitting unit, the smaller the thickness h6 of the second metal pattern 051; conversely, the larger the size of the electrically connected light-emitting unit, the thicker the thickness h6 of the second metal pattern 051. This further ensures reliable overlap. It should be noted that, in conjunction with... Figure 2 The thickness direction here can also be a direction perpendicular to the bearing surface of substrate 01.
[0090] Optionally, the thickness h6 of each second metal pattern 051 can be from 2 μm to 5 μm. For example, the thickness h6 of each second metal pattern 051 can be 2 μm, 3 μm, 4 μm or 5 μm.
[0091] Optionally, in this embodiment, the material of the first metal portion 0411 may include any one of molybdenum (Mo), molybdenum-titanium-nickel alloy MTD, titanium (Ti), and titanium-tungsten alloy TiW. For example, it can generally be molybdenum-titanium-nickel alloy MTD. The material of the second metal portion 0412 may include a nickel-containing Ni alloy. For example, the material of the second metal portion 0412 may include a copper-nickel CuNi alloy or a nickel-vanadium NiV alloy. The material of the third metal portion 0413 may include copper (Cu). And the material of the second metal layer 05 may include tin (Sn).
[0092] Because tin (Sn) material has excellent wettability on copper (Cu) material, and during the subsequent reflow soldering process, atoms in the tin (Sn) material and copper (Cu) material migrate and expand to form an intermetallic compound (IMC) similar to an alloy, such as the common Cu6Sn5 and Cu3Sn. Therefore, in this embodiment, the third metal part 0413 made of copper (Cu) material can be used to form an IMC with the corresponding second metal pattern 051 made of tin (Sn) material, thereby forming a stable interconnect structure. That is, the first metal pattern 041 can reliably form an interconnect structure with the second metal pattern 051 through its included third metal part 0413, which is used to establish an electrical connection between the wire 02 and the light-emitting unit, achieving conductivity. In this way, the stability of the electrical connection is ensured. This interconnect structure can also be called the solder joint for the electrical connection between the wire 02 and the light-emitting unit, which enables the solder joint to be stable.
[0093] Based on the material of the second metal portion 0412, it is known that the second metal portion 0412 can be used to prevent the IMC generated by the third metal portion 0413 and the second metal pattern 051 from expanding towards the side closer to the substrate 01. Among them, the nickel-containing alloy material has a better effect in preventing the expansion of IMC. In this way, if the light-emitting unit needs to be repaired later, the underlying circuitry (e.g., wires) will not be damaged when the light-emitting unit is pushed off from the driving backplate side.
[0094] Furthermore, based on the material of the first metal portion 0411, it is known that the first metal portion 0411 can be used to enhance the adhesion between the film layer located on the side of the first metal portion 0411 away from the substrate 01 and the film layer located on the side of the first metal portion 0411 close to the substrate 01. For example, in conjunction with the above embodiments, it is known that the first metal portion 0411 can enhance the adhesion between the second metal portion 0412 and the wire 02, ensuring reliable overlap.
[0095] As described in the above embodiments, the second metal layer 05, including the second metal pattern 051, can also be called a bump layer. Since the material of the second metal layer 05 is tin (Sn), it can also be called a Sn-bump layer. Correspondingly, the first metal layer 04, including the first metal pattern 041, can be called an under-bump metal (UBM) layer, or a substrate metallization layer.
[0096] It should be noted that currently, a bump layer is typically placed at the end of the light-emitting unit to overlap with the driving backplane. However, in this embodiment, the bump layer is moved to the end of the driving backplane, meaning that a bump layer is not required at the end of the light-emitting unit, thus reducing the manufacturing cost of the light-emitting unit. Furthermore, it avoids pad oxidation before the light-emitting unit is bonded to the driving backplane. In addition, the light-emitting unit only needs a small amount of flux to reliably bond to the driving backplane.
[0097] Optional, continue to refer to Figure 1 and Figure 2 It can be seen that the orthographic projection of each first opening K1 on the substrate 01 described in the embodiments of this disclosure is located within the orthographic projection of the corresponding wire 02 on the substrate 01.
[0098] Based on this, combined Figure 2 A partial enlarged view of the first metal pattern 041 shows that each first metal pattern 041 may include: a first portion 041A located outside the first opening K1 and a second portion 041B located inside the first opening K1. That is, combined with... Figure 3 The whole consisting of the first metal part 0411, the second metal part 0412 and the third metal part 0413 includes the first part 041A and the second part 041B.
[0099] Furthermore, the first portion 041A can overlap with the side of the protective layer 03 away from the upper surface of the conductor 02. The upper surface of the conductor 02 is the surface of the conductor 02 away from the substrate 01. That is, the first portion 041A can be located on the side of the protective layer 03 away from the upper surface of the conductor 02, and the protective layer 03 exists between it and the conductor 02.
[0100] Furthermore, along the direction perpendicular to the substrate 01, the cross-section of the second portion 041B can have the same shape and the same size as the cross-section of the first opening K1.
[0101] For example, refer to Figure 1 and Figure 2 It can be seen that, along the direction perpendicular to the substrate 01, the cross-sectional shape of the first opening K1 and the cross-sectional shape of the second part 041B of the first metal pattern 041 can both be inverted trapezoids. The second part 041B fits perfectly into the first opening K1 and overlaps with the wire 02. Furthermore, the cross-sectional shape of the first part 041A of the first metal pattern 041 can be a regular trapezoid.
[0102] Since the protective layer 03 is generally formed using a mask through a single patterning process, the shape of the cross-section of the first opening K1, whether inverted or regular trapezoidal, can be formed using different masks. Here, different masks refer to masks with different opening shapes. The single patterning process includes steps such as coating, exposure, development, and etching.
[0103] Of course, in some embodiments, the cross-section of the first opening K1 can also be other shapes, such as rectangular. Correspondingly, the cross-section of the second portion 041B of the first metal pattern 041 can be rectangular. The cross-section of the first portion 041A of the first metal pattern 041 can also be an inverted trapezoid or a rectangle, depending on the manufacturing method.
[0104] Optional, continue to refer to Figure 2 As can be seen from the enlarged view, the cross-sectional shape of the second metal pattern 051 along the direction perpendicular to the substrate 01 can be trapezoidal. For example, it can be an upright trapezoid or an inverted trapezoid.
[0105] Specifically, the second metal pattern 051 is presented as... Figure 2 Whether the trapezoid shown is upright or inverted depends on the process used to prepare the first metal pattern 041 and the second metal pattern 051. The following method examples illustrate this in detail.
[0106] Optionally, in this embodiment, the material of the protective layer 03 may include any one of resin, silicon nitride (SiOx), and silicon oxide (SiNx). The protective layer 03 may also be referred to as a passivation layer (PVX). Furthermore, the protective layer 03 can prevent the second metal pattern 051 made of tin (Sn) material from contacting the growth layer 022 made of copper (Cu) material in the conductor 02, thus preventing the formation of an IMC (Integrated Molding Complex).
[0107] In summary, this disclosure provides a driving backplane. The driving backplane includes: a substrate, multiple conductive lines located on one side of the substrate, and a protective layer, a first metal layer, and a second metal layer sequentially stacked on the side of the multiple conductive lines away from the substrate. The protective layer has multiple openings exposing the multiple conductive lines. The first metal layer includes multiple first metal patterns, and the second metal layer includes multiple second metal patterns. Each second metal pattern and a corresponding first metal pattern can form an interconnect structure to reliably electrically connect the conductive lines on the side of the first metal pattern closest to the substrate to the light-emitting unit subsequently formed on the side of the second metal pattern away from the substrate through the openings exposing the conductive lines, thereby driving the light-emitting unit to emit light.
[0108] Figure 4 This disclosure provides a method for manufacturing a display panel, which can be used to manufacture panels such as... Figure 1 or Figure 2 The drive backplane shown. (As shown) Figure 4 As shown, the method includes:
[0109] Step 401: Provide a substrate.
[0110] Optional, see reference Figure 1 As described in the above embodiments, the provided substrate 01 can be a glass substrate, a flexible substrate, or a silicon-based substrate. This disclosure does not limit this aspect.
[0111] Step 402: Form multiple wires on one side of the substrate.
[0112] Optional, Figure 5 A schematic diagram of multiple conductive lines 02 formed on a substrate 01 is shown. (Combined with...) Figure 2 It can be seen that the multiple conductive lines 02 formed can be arranged at intervals along the direction X1 parallel to the substrate bearing surface, and each conductive line 02 can include a seed layer 021 and a growth layer 022 stacked sequentially.
[0113] For example, a seed layer 021 and a growth layer 022 can be formed on one side of the substrate 01 by processes such as deposition or electroplating to obtain the wiring. Furthermore, the multiple wires 02 can be formed here using additive or subtractive methods.
[0114] The additive process can include the following steps: First, a seed layer film covering the entire substrate 01 is formed by depositing a metal material (e.g., molybdenum-titanium-nickel alloy MTD) on one side of the substrate 01. Then, the seed layer film is patterned to obtain multiple seed layers 021 spaced apart along a direction X1 parallel to the substrate bearing surface. Next, a metal material (e.g., Cu) is electroplated on the side of each seed layer 021 away from the substrate 01 to form a growth layer 022. This results in multiple conductive lines 02. The cross-section of the conductive lines 02 formed using the additive method is typically trapezoidal.
[0115] The subtractive processing flow can include: First, depositing a metal material (e.g., molybdenum-titanium-nickel alloy MTD) on one side of substrate 01 to form a seed layer film covering the entire substrate 01. Then, electroplating a metal material on the side of the seed layer film away from substrate 01 to form a growth layer 022. Finally, patterning the seed layer film to form a seed layer 021. This yields multiple conductive lines 02. The cross-section of the conductive lines 02 formed using the subtractive processing method can generally be an inverted trapezoid.
[0116] Step 403: Form a protective layer on the side of the multiple conductors away from the substrate.
[0117] Optional, Figure 6 A schematic diagram of a protective layer 03 formed on a substrate 01 is shown. (Reference) Figure 2 and Figure 6 As can be seen, the formed protective layer 03 can cover the sidewall of each wire 02 and can have multiple first openings K1. The orthographic projection of each first opening K1 on the substrate 01 overlaps with the orthographic projection of the corresponding wire 02 on the substrate to expose the wire 02. For example, the orthographic projection of each first opening K1 on the substrate 01 is located within the orthographic projection of the corresponding wire 02 on the substrate to reliably expose the wire 02.
[0118] For example, a protective layer 03 can be formed using plasma-enhanced chemical vapor deposition (PECVD) combined with patterning. Based on this method, the material used to form the protective layer 03 can be a non-resin material such as silicon nitride (SiOx) or silicon oxide (SiNx) as described in the above embodiments. Alternatively, the protective layer 03 can be formed using a single patterning process including coating, exposure, and development. Based on this method, the material used to form the protective layer 03 can be a resin material as described in the above embodiments. Furthermore, the cross-section of each formed first opening K1 can be... Figure 6 The inverted trapezoid shown.
[0119] Step 404: Form a first metal layer on the side of the protective layer away from the substrate.
[0120] Optional, Figure 7 A schematic diagram of a first metal layer formed on substrate 01 is shown. (Reference) Figure 2 and Figure 7 It can be seen that the first metal layer 04 formed may include a plurality of first metal patterns 041 arranged at intervals along the direction X1 parallel to the bearing surface of the substrate 01. The orthographic projection of each first metal pattern 041 on the substrate 01 and the orthographic projection of the corresponding wire 02 on the substrate 01 may overlap. Each first metal pattern 041 may be connected to a wire 02 through a first opening K1 that exposes a wire 02.
[0121] Furthermore, combined Figure 3 As can be seen, in the formed first metal layer 04, each first metal pattern 041 may include a first metal portion 0411, a second metal portion 0412, and a third metal portion 0413 sequentially stacked along a direction away from the substrate 01. Each first metal pattern 041 may include a first portion 041A located outside the first opening K1 and a second portion 041B located inside the first opening K1. The cross-section of the first portion 041A may be a regular trapezoid as shown in the figure; the cross-section of the second portion 041B may be an inverted trapezoid as shown in the figure, having the same cross-sectional shape and size as the first opening K1, and fitting precisely into the first opening K1.
[0122] For example, different metal materials (such as molybdenum-titanium-nickel alloy MTD, nickel-containing Ni alloy, and copper Cu) can be sequentially deposited on the side of the protective layer 03 away from the substrate 01 to form a first metal portion 0411, a second metal portion 0412, and a third metal portion 0413, thereby obtaining a first metal pattern 041. Furthermore, a first metal thin film covering the entire protective layer 03 can be deposited first, and then the first metal pattern 041 can be obtained through subsequent etching.
[0123] Step 405: Form a second metal layer on the side of the first metal layer away from the substrate.
[0124] Optional, Figure 8 A schematic diagram of a first metal layer formed on substrate 01 is shown. (Reference) Figure 2 and Figure 8 It can be seen that the formed second metal layer 05 may include a plurality of second metal patterns 051 arranged at intervals along a direction X1 parallel to the bearing surface of the substrate 01, and the orthographic projection of each second metal pattern 051 on the substrate 01 overlaps with the orthographic projection of a corresponding first metal pattern 041 on the substrate 01, and each second metal pattern 051 overlaps with a corresponding first metal pattern 041 to form an interconnection structure, electrically connecting the wires 02 and the light-emitting unit. Furthermore, the cross-section of the formed second metal pattern 051 may be trapezoidal. For example, Figure 8The shape shown is either an upright trapezoid or an inverted trapezoid.
[0125] For example, multiple second metal patterns 051 can be formed using an electroplating process to obtain a second metal layer 05. Based on this, taking the example of first depositing a first metal thin film to cover the entire protective layer 03, and then subsequently etching to obtain the first metal pattern 041, the processes of steps 404 and 405 are described below:
[0126] First, combined Figure 9 A first metal thin film M1 is deposited on the side of the protective layer 03 away from the substrate 01, and the orthographic projection of the first metal thin film M1 on the substrate 01 overlaps with the orthographic projection of the protective layer 03 on the substrate 01, that is, the entire protective layer 03 is covered.
[0127] Then, combine Figure 10 A pattern-defining layer M2 can be formed on the side of the first metal thin film M1 away from the substrate 01 using a patterning process. The formed pattern-defining layer M2 may have multiple second openings K2, and the orthographic projection of each second opening K2 onto the substrate 01 can overlap with the orthographic projection of a corresponding first opening K1 onto the substrate 01 to expose the first metal pattern 041 located within the first opening K1. Optionally, a photoresist material layer covering the entire first metal thin film M1 can be formed on the side of the first metal thin film M1 away from the substrate 01, and then the photoresist material layer is exposed and developed to obtain the removable pattern-defining layer M2 with multiple second openings K2.
[0128] Then, continue to combine Figure 10 An additive method is used to electroplate a second metal pattern 051 in each second opening K2 to form a second metal layer 05 comprising multiple second metal patterns 051.
[0129] Then, continue to combine Figure 10 The pattern defining layer M2 can be removed. Alternatively, the pattern defining layer M2 can be removed by an etching process.
[0130] Finally, continue to combine Figure 10 Wet etching can be performed on the first metal thin film M1 to form a first metal layer 04 including multiple first metal patterns 041. Since the first metal thin film M1 needs to be etched here, a protective layer 03 is provided to cover the sidewall of the wire 02 to prevent the wire 02 from being accidentally etched.
[0131] Of course, in some embodiments, the second metal layer 05 can also be formed by subtractive electroplating. Specific methods can be found in the embodiments corresponding to the subtractive method described above, and will not be repeated here. Alternatively, the second metal layer 05 can be formed using processes other than electroplating, such as electroless plating or screen printing. Both electroplating and electroless plating processes offer high precision and can form the required micron-level thickness of the second metal pattern 051.
[0132] In summary, the present disclosure provides a method for fabricating a driving backplane. In this method, multiple conductive lines can be formed on one side of a substrate, and a protective layer, a first metal layer, and a second metal layer can be sequentially stacked on the side of the multiple conductive lines away from the substrate. The formed protective layer has multiple openings exposing the multiple conductive lines. The first metal layer includes multiple first metal patterns, and the second metal layer includes multiple second metal patterns. Each second metal pattern and a corresponding first metal pattern can form an interconnect structure, so that the conductive lines located on the side of the first metal pattern closer to the substrate are reliably electrically connected to the light-emitting units subsequently formed on the side of the second metal pattern away from the substrate through the openings exposing the conductive lines, thereby driving the light-emitting units to emit light.
[0133] Figure 11 This is a schematic diagram of the structure of a display substrate provided in an embodiment of this disclosure. For example... Figure 11 As shown, the display substrate 000 includes: a plurality of light-emitting units L1, and as shown in the figure. Figure 1 or Figure 2 The drive backplane 00 is shown.
[0134] The driving backplate 00 is electrically connected to multiple light-emitting units L1 and is used to drive the multiple light-emitting units L1 to emit light.
[0135] It should be noted that, in combination Figure 11 In the driving backplane 00, each pair of adjacent interconnecting structures can serve as positive + and negative - respectively, and be electrically connected to a light-emitting unit L1 through positive pad + and negative pad -, reliably driving the light-emitting unit to emit light. The connection method of the remaining light-emitting units L1 is similar and will not be described in detail.
[0136] Optionally, the light-emitting unit L1 may include a sub-millimeter-scale light-emitting diode, also known as a mini light-emitting diode (mini LED) or a micro LED. Micro LEDs can reach the micrometer scale, which is smaller than mini LEDs. Therefore, assembling Micro LEDs onto a driving backplane to form a high-density array has become a more popular display technology in the market. Furthermore, Micro LEDs offer advantages such as self-illumination, high resolution, high contrast, low power consumption, long lifespan, fast response speed, and good thermal stability.
[0137] Figure 12 This is a schematic diagram of the structure of a display device provided in an embodiment of this disclosure. Figure 12 As shown, the display device includes: a power supply component J1, and as shown in the figure. Figure 11 The display substrate 000 shown.
[0138] The power supply component J1 is electrically connected to the display substrate 000 and is used to supply power to the display substrate 000.
[0139] Optionally, the display device can be any product or component with display function, such as a mobile phone, tablet computer, television, monitor, laptop computer, digital photo frame, navigator, or transparent display product.
[0140] Optionally, when applied to a liquid crystal display device, Figure 12 The display substrate 000 shown can be disposed on the backlight side of the liquid crystal display panel as a backlight module to provide backlight for the liquid crystal display panel.
[0141] It should be noted that the dimensions of layers and regions may be exaggerated in the accompanying drawings for clarity. Furthermore, it is understood that when an element or layer is referred to as being "on" another element or layer, it can be directly on the other element, or there may be intermediate layers. Additionally, it is understood that when an element or layer is referred to as being "below" another element or layer, it can be directly below the other element, or there may be more than one intermediate layer or element. Furthermore, it is also understood that when a layer or element is referred to as being "between" two layers or two elements, it can be the only layer between the two layers or two elements, or there may be more than one intermediate layer or element. Similar reference numerals throughout indicate similar elements.
[0142] Furthermore, the terminology used in the embodiments of this disclosure is for the purpose of explaining the embodiments of this disclosure only and is not intended to limit this disclosure. Unless otherwise defined, the technical or scientific terms used in the embodiments of this disclosure should be understood in their ordinary meaning as understood by one of ordinary skill in the art to which this disclosure pertains.
[0143] For example, in embodiments of this disclosure, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance. The term "multiple" refers to two or more unless otherwise expressly defined.
[0144] Similarly, words like "one" or "one" do not indicate a quantity limit, but rather that there is at least one.
[0145] The word “includes” or similar terms means that the elements or objects preceding “includes” or “include” cover the elements or objects listed after “includes” or “include” or their equivalents, and do not exclude other elements or objects.
[0146] Terms like "up," "down," "left," or "right" are used only to indicate relative positional relationships. When the absolute position of the object being described changes, the relative positional relationship may also change accordingly. "Connection" or "coupled" refers to an electrical connection.
[0147] The above description is merely an optional embodiment of this disclosure and is not intended to limit this disclosure. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this disclosure should be included within the protection scope of this disclosure.
Claims
1. A drive backplane, characterized in that, The drive backplate includes: substrate; Multiple wires located on one side of the substrate and spaced apart along a direction parallel to the substrate bearing surface; A protective layer located on the side of the plurality of conductors away from the substrate, the protective layer covering the sidewall of each conductor and having a plurality of first openings, wherein the orthographic projection of each first opening on the substrate overlaps with the orthographic projection of the corresponding conductor on the substrate, so as to expose the conductor; A first metal layer located on the side of the protective layer away from the substrate includes a plurality of first metal patterns spaced apart along a direction parallel to the substrate bearing surface. The orthographic projection of each first metal pattern on the substrate overlaps with the orthographic projection of a corresponding wire on the substrate, and each first metal pattern overlaps with the wire through a first opening exposing the wire. Each first metal pattern includes a first metal portion, a second metal portion, and a third metal portion that are sequentially stacked and overlapped with each other along a direction away from the substrate. The material of the first metal portion includes any one of molybdenum, molybdenum-titanium-nickel alloy, titanium, and titanium-tungsten. The material of the second metal portion includes a nickel-containing alloy. The material of the third metal portion includes copper. A second metal layer is located on the side of the first metal layer away from the substrate. The second metal layer includes a plurality of second metal patterns spaced apart along a direction parallel to the substrate bearing surface. The orthographic projection of each second metal pattern on the substrate overlaps with the orthographic projection of a corresponding first metal pattern on the substrate, and each second metal pattern overlaps with a corresponding first metal pattern to form an interconnect structure for electrically connecting the wires and the light-emitting unit. The material of the second metal layer includes tin. The third metal part is used to generate an interface alloy compound with the corresponding second metal pattern; The second metal portion is used to prevent the interface alloy compound formed by the third metal portion and the second metal pattern from extending towards the side closer to the substrate; The first metal part is used to improve the adhesion between the second metal part and the wire.
2. The drive backplane according to claim 1, characterized in that, The thickness of the third metal part is greater than the thickness of the second metal part, and the thickness of the second metal part is greater than or equal to the thickness of the first metal part.
3. The drive backplane according to claim 2, characterized in that, The thickness of the first metal portion is 200 to 500 angstroms; The thickness of the second metal part is 300 to 500 angstroms; The thickness of the third metal part is 3,000 to 5,000 angstroms.
4. The drive backplane according to any one of claims 1 to 3, characterized in that, The orthographic projection of each first opening on the substrate lies within the orthographic projection of the corresponding wire on the substrate; Each first metal pattern includes: a first portion located outside the first opening and a second portion located inside the first opening; Furthermore, the first portion overlaps with the side of the protective layer away from the upper surface of the conductor, the upper surface of the conductor being the surface of the conductor away from the substrate; along the direction perpendicular to the substrate, the cross-section of the second portion has the same shape and size as the cross-section of the first opening.
5. The drive backplane according to claim 4, characterized in that, Along the direction perpendicular to the substrate, the cross-sectional shape of the first opening and the cross-sectional shape of the second part of the first metal pattern are both inverted trapezoids, and the cross-sectional shape of the first part of the first metal pattern is a regular trapezoid.
6. The drive backplane according to any one of claims 1 to 3, characterized in that, In the second metal layer, the thickness of each second metal pattern is positively correlated with the size of the electrically connected light-emitting unit.
7. The drive backplane according to claim 6, characterized in that, In the second metal layer, the thickness of each second metal pattern is 2 micrometers to 5 micrometers.
8. The drive backplane according to claim 6, characterized in that, Along a direction perpendicular to the substrate, the cross-sectional shape of the second metal pattern is trapezoidal.
9. The drive backplate according to any one of claims 1 to 3, characterized in that, Each conductor includes a seed layer and a growth layer stacked sequentially in a direction away from the substrate, wherein the cross-sectional shape of the seed layer and the cross-sectional shape of the growth layer are both trapezoidal in a direction perpendicular to the substrate; Furthermore, the seed layer comprises: a first seed layer and a second seed layer sequentially stacked in a direction away from the substrate; The first seed layer is made of a molybdenum-titanium-nickel alloy and has a thickness of 300 angstroms; the second seed layer and the growth layer are both made of copper and have a thickness of 3000 angstroms, respectively; the growth layer has a thickness of 3 micrometers to 10 micrometers. The protective layer is made of any one of resin, silicon nitride, and silicon oxide.
10. A method for manufacturing a display panel, characterized in that, The method for preparing the drive backplane as described in any one of claims 1 to 9 comprises: Provide substrate; Multiple wires are formed on one side of the substrate, and the multiple wires are arranged at intervals along a direction parallel to the substrate bearing surface; A protective layer is formed on the side of the plurality of conductors away from the substrate, and the protective layer covers the sidewall of each conductor and has a plurality of first openings, wherein the orthographic projection of each first opening on the substrate overlaps with the orthographic projection of the corresponding conductor on the substrate to expose the conductor. A first metal layer is formed on the side of the protective layer away from the substrate, and the first metal layer includes a plurality of first metal patterns spaced apart along a direction parallel to the substrate bearing surface. The orthographic projection of each first metal pattern on the substrate overlaps with the orthographic projection of a corresponding wire on the substrate, and each first metal pattern overlaps with the wire through a first opening that exposes the wire. A second metal layer is formed on the side of the first metal layer away from the substrate, and the second metal layer includes a plurality of second metal patterns spaced apart along a direction parallel to the substrate bearing surface. The orthographic projection of each second metal pattern on the substrate overlaps with the orthographic projection of a corresponding first metal pattern on the substrate, and each second metal pattern overlaps with a corresponding first metal pattern to form an interconnect structure for electrically connecting the wires and the light-emitting unit.
11. The method according to claim 10, characterized in that, The step of forming a second metal layer on the side of the first metal layer away from the substrate includes: A pattern defining layer is formed on the side of the first metal layer away from the substrate using a patterning process. The pattern defining layer has a plurality of second openings. The orthographic projection of each second opening on the substrate overlaps with the orthographic projection of a corresponding first opening on the substrate to expose the first metal pattern located within the first opening. An additive method is used to electroplate a second metal pattern within each second opening to form a second metal layer comprising the plurality of second metal patterns; Remove the pattern defining layer.
12. The method according to claim 11, characterized in that, The formation of a first metal layer on the side of the protective layer away from the substrate includes: A first metal thin film is deposited on the side of the protective layer away from the substrate, and the orthographic projection of the first metal thin film on the substrate overlaps with the orthographic projection of the protective layer on the substrate; After removing the pattern defining layer, the first metal film is wet etched to form a first metal layer including the plurality of first metal patterns; Furthermore, forming a removable pattern defining layer on the side of the first metal layer away from the substrate includes: forming a removable pattern defining layer on the side of the first metal film away from the substrate.
13. A display substrate, characterized in that, The display substrate includes: a plurality of light-emitting units, and a driving backplate as described in any one of claims 1 to 9; The driving backplate is electrically connected to the plurality of light-emitting units and is used to drive the plurality of light-emitting units to emit light.
14. The display substrate according to claim 13, characterized in that, The light-emitting unit includes a mini light-emitting diode or a micro light-emitting diode.
15. A display device, characterized in that, The display device includes: a power supply component, and a display substrate as described in claim 13 or 14; The power supply component is electrically connected to the display substrate and is used to supply power to the display substrate.
Citation Information
Patent Citations
Display panel and manufacturing method thereof
CN113345919A
Array substrate and preparation method thereof
CN113809095A