A detection circuit, a method for detecting the etching amount of a line width, and a display device

Abstract

An embodiment of the present application provides a detection circuit, a method for detecting the etching amount of a line width, and a display device. In the detection circuit, the first end of the first part is electrically connected to the first voltage signal line, and the second end is electrically connected to the output end of the detection circuit; the first end of the second part is electrically connected to the second voltage signal line, and the second end is electrically connected to the output end of the detection circuit; wherein, the first part includes a first trace, the first end of the first trace is electrically connected to the first end of the first part, and the second end is electrically connected to the second end of the first part; the second part includes a second trace, the first end of the second trace is electrically connected to the first end of the second part, and the second end is electrically connected to the second end of the second part; along the first direction, the width of the first trace is different from the width of the second trace, and the first direction intersects the arrangement direction of the first part and the second part. The present application can determine the fluctuation value of the etching amount of the line width according to the actual output voltage of the detection circuit, and further determine the actual etching amount of the line width.

Description

Technical Field

[0001] This application relates to the field of display technologies, and particularly to a detection circuit, a method for detecting the etching amount of a line width, and a display device.

Background Art

[0002] During the manufacturing process of a display device, an etching process needs to be used, and the etching quality has a significant impact on the working performance of the display device.

[0003] In the existing manufacturing process of display devices, due to the etching process, there are often certain etching deviations, resulting in the actual etching amount of the line width being different from the designed etching amount, thus affecting the working accuracy of the display device with the line width data as a parameter. Therefore, how to obtain the actual etching amount of the line width has become an urgent problem to be solved currently.

[0004]

Content of the Application

[0005] In view of this, embodiments of this application provide a detection circuit, a method for detecting the etching amount of a line width, and a display device to solve the above problems.

[0006] In a first aspect, embodiments of this application provide a detection circuit for detecting the etching amount of a line width; the detection circuit includes a first part and a second part, the first end of the first part is electrically connected to a first voltage signal line, and the second end is electrically connected to the output end of the detection circuit; the first end of the second part is electrically connected to a second voltage signal line, and the second end is electrically connected to the output end of the detection circuit; wherein, the first part includes a first trace, the first end of the first trace is electrically connected to the first end of the first part, and the second end is electrically connected to the second end of the first part; the second part includes a second trace, the first end of the second trace is electrically connected to the first end of the second part, and the second end is electrically connected to the second end of the second part; along a first direction, the width of the first trace is different from the width of the second trace, and the first direction intersects with the arrangement direction of the first part and the second part.

[0007] In one implementation manner of the first aspect, along the first direction, the width of the second trace is greater than the width of the first trace.

[0008] In one implementation manner of the first aspect, along the first direction, the width of the second trace is at least twice the width of the first trace.

[0009] In one implementation manner of the first aspect, the first part includes a plurality of first traces, and the second part includes one second trace.

[0010] In one implementation manner of the first aspect, at least one of the first part and the second part includes a metal material.

[0011] In one implementation of the first aspect, at least one of the first part and the second part includes a metal oxide material.

[0012] In one implementation of the first aspect, the materials of the first part and the second part are the same.

[0013] In one implementation of the first aspect, the first part further includes a first connection structure and a second connection structure. The first connection structure is electrically connected to the first end of the first trace, and one end of the first connection structure is electrically connected to the first voltage signal line; the second connection structure is electrically connected to the second end of the first trace and the second end of the second trace, and one end of the second connection structure is electrically connected to the output end of the detection circuit; wherein, the materials of the first connection structure and the second connection structure are different from that of the first trace.

[0014] In one implementation of the first aspect, the second part further includes a third connection structure. The third connection structure is electrically connected to the first end of the second trace, and one end of the third connection structure is electrically connected to the second voltage signal line; wherein, the material of the third connection structure is different from that of the second trace.

[0015] In a second aspect, an embodiment of the present application provides a method for detecting the etching amount of a line width, which is detected by using the detection circuit provided in the first aspect; the detection method includes:

[0016] Pre-store the set etching amounts of the line widths of the first trace and the second trace, and determine the initial resistance values of the first trace and the second trace;

[0017] Detect the actual output voltage of the detection circuit, and judge the etching amount of the line width to be measured according to the actual output voltage.

[0018] In a third aspect, an embodiment of the present application provides a display device, including the detection circuit provided in the first aspect.

[0019] In the embodiment of the present application, according to the output voltage of the detection circuit after etching, the fluctuation value of the etching amount of the line width between the first trace and the second trace can be determined; since the widths of the first trace and the second trace before etching are set widths, that is, the set etching amounts of the line widths of the first trace and the second trace are known values, then according to the fluctuation value of the etching amount of the line width between the first trace and the second trace, the actual etching amount of the line width of the first trace and the second trace can be determined. Further, by applying the detection circuit provided in the embodiment of the present application to a display device, the actual etching amount of the line width in the display device can be detected according to the fluctuation value of the etching amount of the line width, thereby improving the working accuracy of the display device with the line width data as a parameter and improving the working performance of the display device.

Description of the Drawings

[0020] To more clearly illustrate the technical solutions of the embodiments of the present application, the following will briefly introduce the accompanying drawings required in the embodiments. Obviously, the accompanying drawings in the following description are only some embodiments of the present application. For those of ordinary skill in the art, without creative efforts, other accompanying drawings can be obtained based on these drawings.

[0021] Figure 1 Schematic diagram of a detection circuit provided by an embodiment of the present application;

[0022] Figure 2 Schematic diagram of another detection circuit provided by an embodiment of the present application;

[0023] Figure 3 For Figure 1 And Figure 2 An equivalent circuit diagram of the detection circuit shown;

[0024] Figure 4 Schematic diagram of another detection circuit provided by an embodiment of the present application;

[0025] Figure 5 Schematic diagram of another detection circuit provided by an embodiment of the present application;

[0026] Figure 6 Schematic diagram of another detection circuit provided by an embodiment of the present application;

[0027] Figure 7 For Figures 4 - 6 An equivalent circuit diagram of the detection circuit shown;

[0028] Figure 8 Schematic diagram of another detection circuit provided by an embodiment of the present application;

[0029] Figure 9 Flowchart of a method for detecting the line width etching amount provided by an embodiment of the present application;

[0030] Figure 10 Schematic diagram of a display device provided by an embodiment of the present application.

Specific Embodiments

[0031] To better understand the technical solutions of the present application, the following will describe the embodiments of the present application in detail with reference to the accompanying drawings.

[0032] It should be clear that the described embodiments are only some embodiments of the present application, rather than all embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative efforts belong to the scope of protection of the present application.

[0033] The terms used in the embodiments of the present application are for the purpose of describing specific embodiments only and are not intended to limit the present application. The singular forms "a", "the", and "said" used in the embodiments of the present application and the appended claims are also intended to include the plural forms unless the context clearly dictates otherwise.

[0034] It should be understood that the term "and / or" used herein is merely an associative relationship describing associated objects, indicating that there can be three relationships. For example, A and / or B can represent: A exists alone, A and B exist simultaneously, and B exists alone. Additionally, the character " / " herein generally represents an "or" relationship between the associated objects before and after.

[0035] In the description of this specification, it should be understood that the words "substantially", "approximately", "about", "around", "roughly", "generally" and the like described in the claims and embodiments of the present application refer to what can be generally recognized within a reasonable process operation range or tolerance range, rather than an exact value.

[0036] It should be understood that although terms such as first and second may be used in the embodiments of the present application to describe parts, traces, connection structures, etc., these parts, traces, connection structures, etc. should not be limited to these terms. These terms are only used to distinguish parts, traces, connection structures, etc. from each other. For example, without departing from the scope of the embodiments of the present application, the first part may also be referred to as the second part, and similarly, the second part may also be referred to as the first part.

[0037] Through careful and in-depth research, the applicant of this case provides a solution to the problems existing in the prior art.

[0038] Figure 1 A schematic diagram of a detection circuit provided for the embodiments of the present application, Figure 2 Another schematic diagram of a detection circuit provided for the embodiments of the present application, Figure 3 is Figure 1 and Figure 2 An equivalent circuit diagram of the shown detection circuit.

[0039] The embodiments of the present application provide a detection circuit 100 for detecting the line width etching amount. As Figure 1 and Figure 2As shown, the detection circuit 100 includes a first part 10 and a second part 20. The first end 10A of the first part 10 is electrically connected to the first voltage signal line DL1, and the second end 10B is electrically connected to the output end Po of the detection circuit 100; the first end 20A of the second part 20 is electrically connected to the second voltage signal line DL2, and the second end 20B is electrically connected to the output end Po of the detection circuit 100. The first voltage signal line DL1 is used to transmit the first voltage V1 to the first end 10A of the first part 10, and the second voltage signal line DL2 is used to transmit the second voltage V2 to the first end 20A of the second part 20.

[0040] Among them, the first part 10 includes a first trace 11. The first end 11A of the first trace 11 is electrically connected to the first end 10A of the first part 10, and the second end 11B is electrically connected to the second end 10B of the first part 10. The second part 20 includes a second trace 21. The first end 21A of the second trace 21 is electrically connected to the first end 20A of the second part 20, and the second end 21B is electrically connected to the second end 20B of the second part 20.

[0041] That is to say, the first end 11A of the first trace 11 receives the first voltage V1, and the first end 21B of the second trace 21 receives the second voltage V2; the second end 11B of the first trace 11 and the second end 21B of the second trace 21 are electrically connected to the output end Po of the detection circuit 100.

[0042] Along the first direction X, the width W1 of the first trace 11 is different from the width W2 of the second trace 21, and the first direction X intersects the arrangement direction of the first part 10 and the second part 20.

[0043] Optionally, as Figure 1 shown, along the first direction X, the width W2 of the second trace 21 is greater than the width W1 of the first trace 11, that is, W2 > W1. In addition, it can also be as Figure 2 shown, along the first direction X, the width W2 of the second trace 21 is less than the width W1 of the first trace 11, that is, W2 < W1.

[0044] As Figure 3 shown, the resistance value of the first trace 11 is R1, the resistance value of the second trace 21 is R2, and the output voltage of the detection circuit 100 is V0.

[0045] It can be understood that during the etching process of the first trace 11 and the second trace 21, the fluctuation values of the line width etching amounts of the first trace 11 and the second trace 21 are the same, that is, along the first direction X, the increased or decreased values of the width W1 of the first trace 11 and the width W2 of the second trace 21 after etching relative to before etching are the same. Since the width W1 of the first trace 11 and the width W2 of the second trace 21 before etching are different, the change ratios of the width W1 of the first trace 11 before and after etching and the width W2 of the second trace 21 are different, resulting in different change ratios of the resistance value R1 of the first trace 11 before and after etching and the resistance value R2 of the second trace 21, and further causing the voltage V0 output by the output terminal Po of the detection circuit 100 before and after etching to change. The changed output voltage V0 has a corresponding relationship with the fluctuation value of the line width etching amount.

[0046] It should be noted that in the embodiments of the present application, the width W1 of the first trace 11 and the width W2 of the second trace 21 before etching may refer to the set width when not etched, and the width W1 of the first trace 11 and the width W2 of the second trace 21 after etching may refer to the actual width after etching.

[0047] In the embodiments of the present application, the fluctuation value of the line width etching amount between the first trace 11 and the second trace 21 can be determined according to the output voltage V0 of the detection circuit 100 after etching; since the width W1 of the first trace 11 and the width W2 of the second trace 21 when not etched are set widths, that is, the set line width etching amounts of the first trace 11 and the second trace 21 are known values, the actual line width etching amounts of the first trace 11 and the second trace 21 can be determined according to the fluctuation value of the line width etching amount between the first trace 11 and the second trace 21. Further, when the detection circuit 100 provided in the embodiments of the present application is applied to a display device, the actual line width etching amount in the display device can be detected according to the fluctuation value of the line width etching amount, thereby improving the working accuracy of the display device with the line width data as a parameter and improving the working performance of the display device.

[0048] In an application scenario of the embodiments of the present application, the display device includes a light sensor, and the light sensor is used to sense the intensity of the external environmental light so that the display device adjusts the display brightness according to the intensity of the external environmental light. However, the photocurrent generated by the light sensor according to the light intensity is not only affected by the light intensity but also affected by the channel length of the light sensor, thereby reducing the sensitivity of the light sensor to the light intensity and affecting the accuracy of the display device in adjusting the display brightness.

[0049] The detection circuit 100 provided by the embodiment of the present application can detect the actual etching amount of the channel length of the photosensor in the display device, so as to exclude the influence of the channel length fluctuation of the photosensor from the photosensor current generated, improve the sensitivity of the photosensor to the light intensity, and further improve the accuracy of the display device in adjusting the display brightness.

[0050] In an embodiment of the present application, please continue to refer to Figure 1 , along the first direction X, the width W2 of the second trace 21 is at least twice the width W1 of the first trace 11. That is, W2≥2W1.

[0051] In the embodiment of the present application, when W2≥2W1 is set, the difference in the change ratio of the width W1 of the first trace 11 before and after etching and the change ratio of the width W2 of the second trace 21 is relatively large, so that the difference in the change ratio of the resistance R1 of the first trace 11 before and after etching and the change ratio of the resistance R2 of the second trace 21 is relatively large, and thus the change in the voltage V0 output by the output end Po of the detection circuit 100 before and after etching is very obvious. The embodiment of the present application is beneficial to improving the sensitivity of the detection circuit 100, thereby improving the detection accuracy of the line width etching amount.

[0052] Figure 4 is a schematic diagram of another detection circuit provided by the embodiment of the present application, Figure 5 is a schematic diagram of another detection circuit provided by the embodiment of the present application, Figure 6 is a schematic diagram of another detection circuit provided by the embodiment of the present application, Figure 7 is Figures 4 - 6 an equivalent circuit diagram of the detection circuit shown.

[0053] In an embodiment of the present application, as shown in Figures 4 - 6 , the first part 10 includes a plurality of first traces 11, and the second part 20 includes a second trace 21.

[0054] Optionally, as shown in Figure 4 , along the first direction X, the second trace 21 is located at a position close to the middle of the first part 10. In addition, as shown in Figure 5 , Figure 6 , along the first direction X, the second trace 21 can also be located at a position close to the edge of the first part 10.

[0055] In the embodiment of the present application, the number of the first traces 11 is set to be more than that of the second traces 21. Then, when the fluctuation value of the line width etching amount is the same, the change ratio of the resistance value of the first part 10 before and after etching is quite different from that of the second part 20, so that the change of the voltage V0 output by the output terminal Po of the detection circuit 100 before and after etching is very obvious. The embodiment of the present application is beneficial to improving the sensitivity of the detection circuit 100, thereby improving the detection accuracy of the line width etching amount.

[0056] It should be noted that, in some embodiments, it is also possible to set that the first part 10 includes one first trace 11, and the second part 20 includes a plurality of second traces 21. In addition, it is also possible to set that the first part 10 includes a plurality of first traces 11, and the second part 20 includes a plurality of second traces 21, and the number of the first traces 11 is different from that of the second traces 21.

[0057] The following combines Figure 4 and Figure 7 to Figure 4 illustrate the relationship between the output voltage V0 and the fluctuation value of the line width etching amount in the shown detection circuit.

[0058] Assume that the first voltage V1 is at a high potential, the second voltage V2 is at a low potential, the number of the first traces 11 is N, the number of the second traces 21 is 1, and N≥2. Before etching, the width of the first trace 11 is W1 and the resistance value is R1, the width of the second trace 21 is W2 and the resistance value is R2, and the width W2 of the second trace 21 is k times the width W1 of the first trace 11, that is, W2 = k*W1.

[0059] Then, before etching, according to Ohm's law:

[0060]

[0061] Assume that the fluctuation value of the line width etching amount is ΔW. Then, after etching, from (Formula One), it can be known that:

[0062]

[0063] Since the width W1 and the resistance value R1 of the first trace 11 before etching, and the width W2 and the resistance value R2 of the second trace 21 are all set values, in (Formula Two), only the fluctuation value ΔW of the line width etching amount is a variable, and the fluctuation value ΔW of the line width etching amount and the output voltage V0 of the detection circuit 100 after etching show a monotonic relationship.

[0064] Therefore, in the detection circuit 100 provided by the embodiments of the present application, the fluctuation value ΔW of the line width etching amount can be determined by detecting the output voltage V0 of the detection circuit 100 after etching, and then the actual etching amounts of the line widths of the first trace 11 and the second trace 21 after etching can be obtained according to the set widths of the first trace 11 and the second trace 21 before etching, so as to achieve the purpose of detecting the line width etching amount.

[0065] In one embodiment of the present application, at least one of the first part 10 and the second part 20 includes a metal material.

[0066] That is to say, in the detection circuit 100, the first part 10 may include a metal material and the second part 20 may not include a metal material. It is also possible that the first part 10 does not include a metal material and the second part 20 includes a metal material. It is also possible that both the first part 10 and the second part 20 include a metal material.

[0067] It should be noted that when the detection circuit 100 is applied to a display device, the metal material included in the detection circuit 100 may be the same as the material of the metal film layer in the display device.

[0068] Optionally, the metal material is at least one of molybdenum, copper, aluminum, and titanium. In addition, the metal material may also be an alloy including any one of molybdenum, copper, aluminum, and titanium.

[0069] In another embodiment of the present application, at least one of the first part 10 and the second part 20 includes a metal oxide material.

[0070] That is to say, in the detection circuit 100, the first part 10 may include a metal oxide material and the second part 20 may not include a metal oxide material. It is also possible that the first part 10 does not include a metal oxide material and the second part 20 includes a metal oxide material. It is also possible that both the first part 10 and the second part 20 include a metal oxide material.

[0071] Optionally, the metal oxide material is indium tin oxide.

[0072] Since indium tin oxide has a high light transmittance, when the detection circuit 100 is applied to a display device, the detection circuit 100 provided by the embodiments of the present application can reduce the influence on the light transmittance of the display device.

[0073] Optionally, the materials of the first part 10 and the second part 20 are the same, and the materials of the first part 10 and the second part 20 can be coated simultaneously, which is beneficial to simplifying the manufacturing process of the detection circuit 100.

[0074] As can be seen from the above embodiments, in the detection circuit 100 provided by the present application, both the first part 10 and the second part 20 can be prepared from a metal material or both can be prepared from a metal oxide material. In addition, one of the first part 10 and the second part 20 can be prepared from a metal material and the other can be prepared from a metal oxide material.

[0075] Figure 8 It is a schematic diagram of another detection circuit provided by an embodiment of the present application.

[0076] As Figure 8 shown, in an embodiment of the present application, the first part 10 further includes a first connection structure 12 and a second connection structure 13. The first connection structure 12 is electrically connected to the first end 11A of the first trace 11, and one end of the first connection structure 12 is electrically connected to the first voltage signal line DL1. That is, the first end 11A of the first trace 11 receives the first voltage V1 transmitted by the first voltage signal line DL1 through the first connection structure 12.

[0077] The second connection structure 13 is electrically connected to the second end 11B of the first trace 11 and the second end 21B of the second trace 21, and one end of the second connection structure 13 is electrically connected to the output end Po of the detection circuit 100. That is, the second end 11B of the first trace 11 and the second end 21B of the second trace 21 are electrically connected to the output end Po of the detection circuit 100 through the second connection structure 13, and the voltage V0 output by the output end Po of the detection circuit 100 can be the potential voltage of the second end 11B of the first trace 11 and the second end 21B of the second trace 21.

[0078] Among them, the materials of the first connection structure 12 and the second connection structure 13 are different from that of the first trace 11.

[0079] That is to say, the material of the first connection structure 12 is different from that of the first trace 11, and the material of the second connection structure 13 is different from that of the first trace 11. Of course, the materials of the first connection structure 12 and the second connection structure 13 can be the same or different, and the embodiments of the present application do not make specific limitations.

[0080] Optionally, the first trace 11 includes a metal oxide material, and the first connection structure 12 and the second connection structure 13 include a metal material.

[0081] Specifically, the first trace 11, the first connection structure 12, and the second connection structure 13 can be arranged in layers, and the detection circuit 100 further includes a via M. The first connection structure 12 and the second connection structure 13 are electrically connected to the first trace 11 through the via M.

[0082] In the embodiments of the present application, the materials of the first connection structure 12, the second connection structure 13 and the first trace 11 are set to be different. When the first end 11A of the first trace 11 receives the first voltage V1 through the first connection structure 12, it is beneficial to prevent the first part 10 from becoming an equipotential body, so as to ensure that the output voltage V0 of the detection circuit 100 can change with the fluctuation of the line width etching amount. Furthermore, it is ensured that the fluctuation value of the line width etching amount can be determined by detecting the output voltage V0, realizing the detection of the actual line width etching amount.

[0083] Further, please continue to refer to Figure 8 , the second part 20 further includes a third connection structure 22. The third connection structure 22 is electrically connected to the first end 21A of the second trace 21, and one end of the third connection structure 22 is electrically connected to the second voltage signal line DL2. The first end 21A of the second trace 21 receives the second voltage V2 transmitted by the second voltage signal line DL2 through the third connection structure 22.

[0084] Among them, the materials of the third connection structure 22 and the second trace 21 are different.

[0085] Optionally, the second trace 21 includes a metal oxide material, and the third connection structure 22 includes a metal material.

[0086] Specifically, the second trace 21 and the third connection structure 22 can be arranged in layers. The detection circuit 100 further includes a via M, and the third connection structure 22 is electrically connected to the second trace 21 through the via M.

[0087] As can be seen from the above embodiments, the second trace 21 can have the same material as the first trace 11. In the embodiments of the present application, the second trace 21 and the first trace 11 can both include metal oxide materials, and the third connection structure 22, the first connection structure 12, and the second connection structure 13 can all include metal materials, and the third connection structure 22, the first connection structure 12, and the second connection structure 13 are prepared simultaneously.

[0088] In the embodiments of the present application, the materials of the second trace 21 and the third connection structure 22 electrically connected thereto are set to be different. When the first end 21A of the second trace 21 receives the second voltage V2 through the third connection structure 22, it is beneficial to prevent the second part 20 from becoming an equipotential body, so as to further ensure that the output voltage V0 of the detection circuit 100 can change with the fluctuation of the line width etching amount. Furthermore, it is ensured that the fluctuation value of the line width etching amount can be determined by detecting the output voltage V0, realizing the detection of the actual line width etching amount.

[0089] Figure 9 This is a flowchart of the operation for detecting the line width etching amount provided by the embodiments of the present application.

[0090] The embodiment of the present application also provides a method for detecting the line width etching amount, which is detected by using the detection circuit 100 provided in the above embodiment. The structure of the detection circuit 100 can be as shown in Figure 1 , Figure 2 , Figures 4 - 6 and Figure 8 . The method provided in the embodiment of the present application can be understood in combination with the relationship between the output voltage V0 in the above detection circuit 100 and the fluctuation value of the line width etching amount.

[0091] As shown in Figure 9 , the method for detecting the line width etching amount includes:

[0092] Step S1: Pre-store the set line width etching amounts of the first trace 11 and the second trace 21, and determine the initial resistance values of the first trace 11 and the second trace 21;

[0093] Step S2: Detect the actual output voltage of the detection circuit 100, and judge the line width etching amount to be measured according to the actual output voltage.

[0094] Among them, the initial resistance values of the first trace 11 and the second trace 21 can be the set resistance values when not etched, that is, the initial resistance values of the first trace 11 and the second trace 21 can be the resistance values when the widths of the first trace 11 and the second trace 21 are the set line widths.

[0095] It can be seen from the above (Formula II) that the fluctuation value ΔW of the line width etching amount shows a monotonic relationship with the actual output voltage V0 of the detection circuit 100 after etching, and in (Formula II), only the fluctuation value ΔW of the line width etching amount is the unknown quantity.

[0096] Therefore, in the detection method provided in the embodiment of the present application, the fluctuation value ΔW of the line width etching amount can be determined according to the actual output voltage of the detection circuit 100 after etching; and then according to the set line width etching amounts of the first trace 11 and the second trace 21, the actual etching amounts of the first trace 11 and the second trace 21 after etching can be obtained, so as to realize the detection of the actual etching amount of the line width.

[0097] It should be noted that when the method provided in the embodiment of the present application is applied to a display device, a control chip can be used to detect the actual output voltage of the detection circuit 100.

[0098] Figure 10 is a schematic diagram of a display device provided in the embodiment of the present application.

[0099] As shown in Figure 10As shown in the figure, an embodiment of the present application provides a display device 300, and the display device 300 includes the detection circuit 100 provided in the above embodiment. The display device 300 provided in the embodiment of the present application may be a mobile phone. In addition, the display device 300 provided in the embodiment of the present application may also be an electronic device such as a computer or a television.

[0100] The display device 300 further includes a control chip 200. The output terminal Po of the detection circuit 100 is electrically connected to the control chip 200, and the control chip 200 can detect the output voltage of the detection circuit 100.

[0101] In the display device 300, according to the output voltage V0 of the detection circuit 100 after etching, the line width etching amount fluctuation value between the first trace 11 and the second trace 21 can be determined. Since the widths W1 of the first trace 11 and W2 of the second trace 21 are set widths before etching, that is, the set line width etching amounts of the first trace 11 and the second trace 21 are known values, the actual line width etching amounts of the first trace 11 and the second trace 21 can be determined according to the line width etching amount fluctuation value between the first trace 11 and the second trace 21, thereby improving the working accuracy of the display device 300 with the line width data as a parameter and improving the working performance of the display device.

[0102] The foregoing are only the preferred embodiments of the present application and are not intended to limit the present application. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present application shall be included within the scope of protection of the present application.

Claims

1. A detection circuit for detecting the line width etching amount, characterized in that, The detection circuit includes a first part and a second part; The first end of the first part is electrically connected to the first voltage signal line, and the second end is electrically connected to the output end of the detection circuit; the first end of the second part is electrically connected to the second voltage signal line, and the second end is electrically connected to the output end of the detection circuit; Wherein, the first part includes a first trace, the first end of the first trace is electrically connected to the first end of the first part, and the second end is electrically connected to the second end of the first part; the second part includes a second trace, the first end of the second trace is electrically connected to the first end of the second part, and the second end is electrically connected to the second end of the second part; along a first direction, the width of the first trace is different from the width of the second trace, and the first direction intersects the arrangement direction of the first part and the second part; The number of the first traces is different from the number of the second traces.

2. The detection circuit according to claim 1, wherein Along the first direction, the width of the second trace is greater than the width of the first trace.

3. The detection circuit according to claim 2, wherein Along the first direction, the width of the second trace is at least twice the width of the first trace.

4. The detection circuit according to claim 1, wherein The first part includes a plurality of the first traces, and the second part includes one second trace.

5. The detection circuit according to claim 1, wherein At least one of the first part and the second part includes a metal material.

6. The detection circuit according to claim 1, wherein At least one of the first part and the second part includes a metal oxide material.

7. The detection circuit according to claim 1, wherein The materials of the first part and the second part are the same.

8. The detection circuit according to claim 1, characterized in that The first part further includes a first connection structure and a second connection structure, the first connection structure is electrically connected to the first end of the first trace, and one end of the first connection structure is electrically connected to the first voltage signal line; the second connection structure is electrically connected to the second end of the first trace and the second end of the second trace, and one end of the second connection structure is electrically connected to the output end of the detection circuit; Wherein, the materials of the first connection structure and the second connection structure are different from the material of the first trace.

9. The detection circuit according to claim 8, wherein The second part further includes a third connection structure, the third connection structure is electrically connected to the first end of the second trace, and one end of the third connection structure is electrically connected to the second voltage signal line; Wherein, the material of the third connection structure is different from the material of the second trace.

10. A method for detecting the etched amount of line width, characterized in that, Detecting by using the detection circuit according to claim 1; the method includes: Pre-storing the set etching amounts of the line widths of the first trace and the second trace, and determining the initial resistance values of the first trace and the second trace; Detecting the actual output voltage of the detection circuit, and judging the etching amount of the line width to be measured according to the actual output voltage.

11. A display device, characterized in that, Including the detection circuit according to any one of claims 1-9.

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