Packaging panel of perovskite x-ray detector and preparation method thereof

Abstract

The application relates to the field of semiconductor photodetectors, in particular to a perovskite X-ray detector packaging panel and a preparation method thereof; a perovskite material layer, an aluminum film layer and a thin film layer, the aluminum film layer is arranged between the perovskite material layer and the thin film layer and is arranged adjacent to the perovskite material layer and the thin film layer; wherein the thin film layer is one or more inorganic thin film layers containing silicon elements; the method comprises the following steps: forming a TFT driving device on the surface of a substrate, forming a perovskite material layer on the surface of the formed TFT driving device, and obtaining a functional unit; pasting an aluminum film layer on the surface of the perovskite material layer in the functional unit, and then depositing a first inorganic thin film layer and a second inorganic thin film layer on the surface of the aluminum film layer to obtain a packaging panel with a waterproof oxygen structure; through the aluminum film layer and the thin film layer, the corrosion of a water-oxygen environment to the perovskite layer material is avoided, and effective packaging is achieved.

Description

Technical Field

[0001] This application relates to the field of semiconductor photodetectors, and more particularly to a packaging panel for a perovskite X-ray detector and its fabrication method. Background Technology

[0002] A photodetector is a device that can capture optical signals within a specific wavelength range and convert them into electrical signals immediately. It has important and wide applications in optical imaging, optical communication, automatic control, and biochemical sensing. Semiconductor photodetectors are currently the mainstream type of photodetector. They are mainly divided into photoconductive detectors, photodiode detectors, and phototransistor detectors. Currently, semiconductor photodetectors based on semiconductor materials such as silicon, germanium, indium, gallium arsenide, and gallium nitride can be widely used in photodetector products and achieve coverage of different spectral ranges due to the different band gaps of each semiconductor material.

[0003] Compared to conventional semiconductor photodetector materials, halide perovskite materials have advantages such as inexpensive raw materials, simple processing, and good photoelectric properties, which has led to their rapid application and development in the optoelectronic field. However, in the application of perovskite materials in photodetectors, the materials themselves are easily degraded when exposed to water and oxygen environments. Simple encapsulation cannot prevent the corrosion of perovskite materials by water and oxygen, which will lead to the degradation of detector performance. Therefore, how to effectively encapsulate perovskite photodetectors to isolate them from water and oxygen is a technical problem that urgently needs to be solved. Summary of the Invention

[0004] This application provides a packaging panel for a perovskite X-ray detector and its fabrication method, to solve the technical problem that the packaging of perovskite photodetectors in the prior art cannot avoid corrosion in a water and oxygen environment.

[0005] In a first aspect, this application provides a packaging panel for a perovskite X-ray detector, the packaging panel comprising:

[0006] A perovskite material layer is used to convert X-ray signals into electrical signals;

[0007] Aluminum film layer, and

[0008] Thin film layer,

[0009] The aluminum film layer is disposed between the perovskite material layer and the thin film layer, and is disposed adjacent to the perovskite material layer and the thin film layer;

[0010] The thin film layer is one or more inorganic thin film layers containing silicon.

[0011] Optionally, the thin film layer includes a first inorganic thin film layer and a second inorganic thin film layer, wherein the first inorganic thin film layer covers the surface of the aluminum film layer, and the second inorganic thin film layer covers the surface of the first inorganic thin film layer; the thickness of the first inorganic thin film layer is 0.2 μm to 0.6 μm, and the thickness of the second inorganic thin film layer is 0.2 μm to 0.6 μm.

[0012] Optionally, the material of the thin film layer includes SiN. x At least one of SiO2.

[0013] Optionally, the perovskite material layer comprises a halide perovskite material with the chemical formula ABX3, wherein A comprises at least one of methylamine cation, formamidinium cation, and cesium cation, B comprises at least one of lead cation and tin cation, and X comprises at least one of chloride anion, bromide anion, and iodide anion.

[0014] Optionally, the perovskite material layer may further include a halide perovskite material with the chemical formula A2CDX6, wherein A includes at least one of methylamine cation, formamidinium cation and cesium cation, C is a silver cation, D includes at least one of bismuth cation, antimony cation and indium cation, and X includes at least one of chloride anion, bromide anion and iodide anion.

[0015] Optionally, the material of the aluminum film layer includes at least one of aluminum tape, aluminum foil, and aluminum sheet.

[0016] Optionally, the thickness of the aluminum film layer is 1 μm to 10 μm.

[0017] Optionally, the packaged panel further includes a substrate and a TFT driver, wherein the TFT driver is disposed between the substrate and the perovskite material layer and is adjacent to the substrate and the perovskite material layer.

[0018] Optionally, the TFT driving device may include at least one of the following structural types: etch-block structure, top gate structure, and back channel etch structure.

[0019] Secondly, this application provides a method for preparing the encapsulation panel described in the first aspect, the method comprising:

[0020] A TFT driving device is formed on the surface of the substrate, and then a perovskite material layer is formed on the surface of the formed TFT driving device to obtain a functional unit.

[0021] An aluminum film layer is attached to the surface of the perovskite material layer in the functional unit, and then a first inorganic thin film layer and a second inorganic thin film layer are deposited on the surface of the aluminum film layer to obtain an encapsulated panel that effectively blocks the water and oxygen environment.

[0022] The technical solutions provided in this application have the following advantages compared with the prior art:

[0023] This application provides a perovskite X-ray detector packaging panel that uses an inorganic thin film layer containing silicon. Since silicon is difficult to dissolve in a water-oxygen environment, the inorganic thin film layer is difficult to be corroded by the water-oxygen environment and has a certain barrier effect against the water-oxygen environment. In addition, by setting an aluminum film layer, a dense film will form on the surface of the aluminum film layer under water-oxygen environment conditions. The dense film can further block water and oxygen, thereby avoiding corrosion from the water-oxygen environment and avoiding attenuation of X-rays. Attached Figure Description

[0024] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with the invention and, together with the description, serve to explain the principles of the invention.

[0025] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, for those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0026] Figure 1 This is a schematic diagram of the structure of the encapsulation panel provided in an embodiment of this application;

[0027] Figure 2 A flowchart illustrating the method provided in the embodiments of this application;

[0028] Among them, 1-substrate, 2-TFT driver device, 3-perovskite material layer, 4-aluminum film layer, 5-first inorganic thin film layer, 6-second inorganic thin film layer. Detailed Implementation

[0029] The present invention will be described in detail below with reference to specific embodiments and examples, thereby making the advantages and various effects of the present invention more clearly apparent. Those skilled in the art should understand that these specific embodiments and examples are for illustrative purposes only and are not intended to limit the present invention.

[0030] Throughout this specification, unless otherwise specified, the terminology used herein should be understood as having the meaning commonly used in the art. Therefore, unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. In the event of any conflict, this specification shall prevail.

[0031] Unless otherwise specified, all raw materials, reagents, instruments and equipment used in this invention can be purchased from the market or prepared by existing methods.

[0032] The inventive concept of this application is as follows: Perovskite materials have advantages such as high carrier mobility and long carrier lifetime, high light absorption coefficient and adjustable bandgap, which provide a foundation for the rapid application and development of perovskite materials in the optoelectronic field. Since perovskite was first reported as a solar cell material in 2009, the efficiency of perovskite cells has now increased to 22%, and it is regarded as a highly promising next-generation solar cell material. Furthermore, using perovskite materials in the field of photodetectors can effectively replace the materials of traditional semiconductor photodetectors, thus saving costs.

[0033] However, since perovskite materials are easily degraded when exposed to water and oxygen environments, simple encapsulation will lead to performance degradation, so this problem needs to be solved.

[0034] The technical solution provided by the embodiments of the present invention is to solve the above-mentioned technical problems, and the general idea is as follows:

[0035] In one embodiment of this application, such as Figure 1 As shown, a packaging panel for a perovskite X-ray detector is provided, the packaging panel comprising:

[0036] Perovskite material layer 3 is used to convert X-ray signals into electrical signals;

[0037] Aluminum film layer 4, and

[0038] Thin film layer,

[0039] The aluminum film layer is disposed between the perovskite material layer and the thin film layer, and is disposed adjacent to the perovskite material layer and the thin film layer;

[0040] The thin film layer is one or more inorganic thin film layers containing silicon.

[0041] In some optional embodiments, the thin film layer includes a first inorganic thin film layer 5 and a second inorganic thin film layer 6, wherein the first inorganic thin film layer 5 covers the surface of the aluminum film layer 4, and the second inorganic thin film layer 6 covers the surface of the first inorganic thin film layer 5; the thickness of the first inorganic thin film layer 5 is 0.2 μm to 0.6 μm, and the thickness of the second inorganic thin film layer 6 is 0.2 μm to 0.6 μm.

[0042] In this embodiment, the positive effect of having a thickness of 0.2 μm to 0.6 μm for the first inorganic thin film layer 5 is that within this thickness range, the first inorganic thin film layer 5 can adhere to the surface of the aluminum film layer 4, preventing the aluminum film layer 4 from directly contacting the water and oxygen environment. Furthermore, the silicon-containing first inorganic thin film layer 5 blocks water, thus protecting the aluminum film layer 4 and the perovskite material layer 3. When the thickness is greater than or less than the endpoint of this range, it will result in an excessively large thickness, affecting the conversion of X-ray signals by the perovskite material layer 3, or an insufficient thickness, making it unable to resist the erosion of the water and oxygen environment.

[0043] The positive effect of the second inorganic thin film layer 6 having a thickness of 0.2μm to 0.6μm is that within this thickness range, the first inorganic thin film layer 5 can be prevented from directly contacting the water and oxygen environment. At the same time, the second inorganic thin film layer 6 containing silicon elements blocks water, thereby protecting the first inorganic thin film layer 5, the aluminum film layer 4, and the perovskite material layer 3.

[0044] In some alternative embodiments, the material of the thin film layer includes SiN. x At least one of SiO2.

[0045] In the embodiments of this application, the material of the defined thin film layer includes SiN. x Both SiN and SiO2 are used, because SiN x Neither SiO2 nor SiO2 is hydrophilic nor oxygen-loving, and they have good resistance to water and oxygen environments.

[0046] In some optional embodiments, the perovskite material layer 3 comprises a halide perovskite material with the chemical formula ABX3, wherein A comprises at least one of methylamine cation, formamidinium cation and cesium cation, B comprises at least one of lead cation and tin cation, and X comprises at least one of chloride anion, bromide anion and iodide anion.

[0047] In this embodiment, by specifying that the perovskite material layer 3 is a halo perovskite material with the chemical formula ABX3, a perovskite with a strong ability to convert X-ray signals into electrical signals can be selected, thus avoiding the situation where the perovskite material layer 3 does not receive X-ray signals well after the encapsulation of the aluminum film layer 4 and the thin film layer.

[0048] In some optional embodiments, the perovskite material layer 3 may further include a halide perovskite material with the chemical formula A2CDX6, wherein A includes at least one of methylamine cation, formamidinium cation and cesium cation, C is a silver cation, D includes at least one of bismuth cation, antimony cation and indium cation, and X includes at least one of chloride anion, bromide anion and iodide anion.

[0049] In this embodiment, by specifying that the perovskite material layer 3 is a halo perovskite material with the chemical formula A2CDX6, a perovskite with a strong ability to convert X-ray signals into electrical signals can be selected, thus avoiding the situation where the perovskite material layer 3 receives poor X-ray signals after the encapsulation of the aluminum film layer 4 and the thin film layer.

[0050] In some alternative embodiments, the aluminum film layer 4 is made of at least one of aluminum tape, aluminum foil, and aluminum sheet.

[0051] In this embodiment, by selecting an aluminum film layer 4 material that has less impact on the transmission of X-ray signals, not only can the aluminum film layer 4 be guaranteed to block water and oxygen, but the effect of the aluminum film layer 4 on the attenuation of X-ray signals can also be avoided.

[0052] In some optional embodiments, the thickness of the aluminum film layer 4 is 1 μm to 10 μm.

[0053] In this embodiment, the positive effect of the aluminum film layer 4 having a thickness of 1μm to 10μm is that within this thickness range, the aluminum film layer 4 can be oxidized to form a dense oxide film under water and oxygen environment conditions, thereby protecting the perovskite material layer 3. At the same time, it can reduce the influence of the aluminum film layer 4 on the process of converting X-ray signals into electrical signals in the perovskite material layer 3.

[0054] In some optional embodiments, the functional unit further includes a substrate 1 and a TFT driver 2, one side of the TFT driver 2 being connected to the surface of the perovskite material layer 3, the TFT driver 2 being disposed opposite the aluminum film layer 4, and the other side of the TFT driver 2 being connected to the substrate 1.

[0055] In this embodiment of the application, by defining the specific configuration of the functional unit and the positional relationship between the substrate 1 and the TFT driver 2, the electrical signal can be accurately displayed by selecting the TFT driver 2, and the TFT driver 2 can be encapsulated by the substrate 1, thereby ensuring the resistance of the encapsulated panel to water and oxygen environments.

[0056] In some alternative embodiments, the TFT driver 2 may have a structure type including at least one of an etch-block structure, a top gate structure, and a back channel etch structure.

[0057] In this embodiment, the structure type of the TFT driver 2 is defined, which can cover most of the configurations of the TFT driver 2, thereby expanding the overall applicability of the packaged panel.

[0058] In one embodiment of this application, such as Figure 2 As shown, a method for fabricating a packaging panel for a perovskite X-ray detector is provided, the method comprising:

[0059] S1. A TFT driving device 2 is formed on the surface of the substrate 1, and then a perovskite material layer 3 is formed on the surface of the formed TFT driving device 2 to obtain a functional unit.

[0060] S2. In the functional unit, the aluminum film layer 4 is sealed on the surface of the perovskite material layer 3, and then the first inorganic thin film layer 5 and the second inorganic thin film layer 6 are deposited on the surface of the aluminum film layer 4 to obtain a packaged panel with a waterproof and oxygen-resistant structure.

[0061] Example 1

[0062] like Figure 1 As shown, a packaging panel for a perovskite X-ray detector includes:

[0063] The functional unit includes a perovskite material layer 3, which is used to convert X-ray signals into electrical signals.

[0064] Aluminum film layer 4, one side of aluminum film layer 4 covers the surface of perovskite material layer 3;

[0065] A thin film layer is placed on the other side of the aluminum film layer 4. The thin film layer is positioned opposite to the functional unit to cooperate with the aluminum film layer 4 to form a waterproof and oxygen-resistant structure.

[0066] Among them, the thin film layer consists of multiple inorganic thin film layers containing Si elements.

[0067] The thin film layer includes a first inorganic thin film layer 5 and a second inorganic thin film layer 6. The first inorganic thin film layer 5 covers the surface of the aluminum film layer 4, and the second inorganic thin film layer 6 covers the surface of the first inorganic thin film layer 5. The thickness of the first inorganic thin film layer 5 is 0.4 μm, and the thickness of the second inorganic thin film layer 6 is 0.4 μm.

[0068] The materials of the thin film layer include SiN x At least one of SiO2 and SiN, wherein the first inorganic thin film layer 5 is made of SiO2 and the second inorganic thin film layer 6 is made of SiN. x .

[0069] The perovskite material layer 3 is composed of a halide perovskite material with the chemical formula ABX3, wherein A is a methylamine cation, B is a cation, and X is an iodide anion.

[0070] The material of aluminum film layer 4 is aluminum tape.

[0071] The thickness of aluminum film layer 4 is 1 μm.

[0072] The functional unit also includes a substrate 1 and a TFT driver 2. One side of the TFT driver 2 is connected to the surface of the perovskite material layer 3. The TFT driver 2 is disposed opposite to the aluminum film layer 4. The other side of the TFT driver 2 is connected to the substrate 1.

[0073] The TFT driver device 2 has an etch-blocking structure.

[0074] like Figure 2 As shown, a method for fabricating a packaging panel for a perovskite X-ray detector includes:

[0075] S1. A TFT driving device 2 is formed on the surface of the substrate 1, and then a perovskite material layer 3 is formed on the surface of the formed TFT driving device 2 to obtain a functional unit.

[0076] S2. An aluminum film layer 4 is attached to the surface of the perovskite material layer 3 in the functional unit, and then a first inorganic thin film layer 5 and a second inorganic thin film layer 6 are deposited on the surface of the aluminum film layer 4 to obtain a packaged panel with a waterproof and oxygen-resistant structure.

[0077] Example 2

[0078] Comparing Example 2 with Example 1, the difference between Example 2 and Example 1 is as follows:

[0079] The thickness of the first inorganic thin film layer 5 is 0.2 μm, and the thickness of the second inorganic thin film layer 6 is 0.2 μm.

[0080] The perovskite material layer 3 is composed of a halide perovskite material with the chemical formula A2CDX6, where A is a cesium cation, C is a silver cation, D is a bismuth cation, and X is a bromide anion.

[0081] The aluminum film layer 4 is made of at least one of aluminum tape, aluminum foil, and aluminum sheet.

[0082] The thickness of aluminum film layer 4 is 5μm.

[0083] The TFT driver device 2 has a top-gate structure.

[0084] Example 3

[0085] Comparing Example 3 with Example 1, the difference between Example 3 and Example 1 is as follows:

[0086] The thickness of the first inorganic thin film layer 5 is 0.6 μm, and the thickness of the second inorganic thin film layer 6 is 0.6 μm.

[0087] The materials of the thin film layer include SiN xAt least one of SiO2 and SiN, wherein the first inorganic thin film layer 5 is made of SiO2 and the second inorganic thin film layer 6 is made of SiN. x .

[0088] The perovskite material layer 3 is composed of a halide perovskite material with the chemical formula A2CDX6, where A is a cesium cation, C is a silver cation, D is a bismuth cation, and X is a bromide anion.

[0089] The material of aluminum film layer 4 is aluminum tape.

[0090] The thickness of aluminum film layer 4 is 10 μm.

[0091] The TFT driver device 2 has a back channel etching structure.

[0092] Example 4

[0093] Comparing Example 4 with Example 1, the difference between Example 4 and Example 1 is as follows:

[0094] The perovskite material layer 3 is composed of a halide perovskite material with the chemical formula A2CDX6, where A is a cesium cation, C is a silver cation, D is a bismuth cation, and X is an anion.

[0095] Example 5

[0096] Comparing Example 5 and Example 2, the differences between Example 5 and Example 2 are as follows:

[0097] The perovskite material layer 3 is composed of a halide perovskite material with the chemical formula ABX3, wherein A is a formamidinium cation, B is a tin cation, and X is a bromide anion.

[0098] Comparative Example 1

[0099] Comparative Example 1 and Example 1 will be compared. The difference between Comparative Example 1 and Example 1 is as follows:

[0100] The first inorganic thin film layer 5 and the second inorganic thin film layer 6 are not used.

[0101] Comparative Example 2

[0102] Comparative Example 2 and Example 1 are compared. The difference between Comparative Example 2 and Example 1 is as follows:

[0103] The first inorganic thin film layer 5 is not used.

[0104] Comparative Example 3

[0105] Comparative Example 3 and Example 1 are compared. The difference between Comparative Example 3 and Example 1 is as follows:

[0106] The second inorganic thin film layer 6 is not used.

[0107] Comparative Example 4

[0108] Comparative Example 4 and Example 1 are compared. The difference between Comparative Example 4 and Example 1 is as follows:

[0109] Aluminum film layer 4 is not used.

[0110] Related experiments:

[0111] The encapsulated panels obtained from each embodiment and comparative example were collected, and their stable working time under water and oxygen environment conditions was statistically analyzed. The results are shown in Table 1.

[0112] The relevant experimental testing method was as follows: the test was conducted in an air environment at 85°C and 85% relative humidity.

[0113] Table 1

[0114] Group Stable working hours (h) Example 1 1100h Example 2 1000h Example 3 1200h Example 4 1100h Example 5 1000h Comparative Example 1 100h Comparative Example 2 200h Comparative Example 3 200h Comparative Example 4 50h

[0115] Detailed analysis of Table 1:

[0116] Stable operating time refers to the length of time that the packaged panel can operate stably in a water and oxygen environment. The longer the stable operating time, the more stable the packaged panel is in a water and oxygen environment.

[0117] The data from Examples 1-3 show that:

[0118] If the encapsulation panel of this application is used, by covering the surface of the perovskite material layer 3 with an aluminum film layer 4, and then covering the aluminum film layer 4 with a thin film layer, and further defining the thin film layer as an inorganic thin film layer containing silicon, since silicon is difficult to be corroded by a water and oxygen environment, it has a certain barrier effect against water and oxygen. Furthermore, the dense film layer formed on the surface of the aluminum film layer 4 under water and oxygen environment conditions can further block water and oxygen, and also avoid attenuation of X-ray signals, ensuring the normal operation of the perovskite material layer 3, thereby achieving effective encapsulation and preventing the water and oxygen environment from corroding the perovskite layer material.

[0119] From the data in Comparative Examples 1-4, we can see that:

[0120] If the first inorganic thin film layer 5, the second inorganic thin film layer 6, or the aluminum film layer 4 are not used, the overall stable working time of the encapsulated panel is short and the working state is unstable. This indicates that the perovskite material layer 3 in the encapsulated panel has been eroded by water and oxygen, which means that the encapsulation effect of the panel is not good.

[0121] One or more technical solutions in the embodiments of this application have at least the following technical effects or advantages:

[0122] (1) The encapsulation panel provided in this application covers the surface of the perovskite material layer 3 with an aluminum film layer 4, and then covers the aluminum film layer 4 with a thin film layer, and then defines the thin film layer as an inorganic thin film layer containing silicon. Through the mutual use of the aluminum film layer 4 and the thin film layer, water and oxygen can be effectively blocked, and the attenuation of X-ray signals can be avoided, ensuring the normal operation of the perovskite material layer 3 and achieving effective encapsulation.

[0123] (2) The encapsulation panel provided in this application has a simple overall structure and the film layer used for the entire encapsulation is thin and the material is less, which can save a lot of cost.

[0124] (3) The packaged panel provided in this application embodiment has functional units that can operate normally, and its stable working time in a water-oxygen environment is more than 1000 hours.

[0125] (4) The method provided in this application embodiment is simple in process and highly operable. It can completely encapsulate the perovskite material layer 3 and ensure that the function of the perovskite material layer 3 does not degrade over a long period of time.

[0126] It should be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0127] The endpoints and any values ​​of the ranges disclosed herein are not limited to the precise ranges or values, and these ranges or values ​​should be understood to include values ​​close to these ranges or values. For numerical ranges, the endpoint values ​​of the various ranges, the endpoint values ​​of the various ranges and individual point values, and individual point values ​​can be combined with each other to obtain one or more new numerical ranges, which should be considered as specifically disclosed herein.

[0128] The above description is merely a specific embodiment of the present invention, enabling those skilled in the art to understand or implement the invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the invention. Therefore, the present invention is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features claimed herein.

Claims

1. A packaging panel for a perovskite X-ray detector, characterized in that, The encapsulation panel includes: The perovskite material layer (3) is used to convert X-ray signals into electrical signals; An aluminum film layer (4) having a thickness of 1 μm to 10 μm; and Thin film layer, The aluminum film layer (4) is disposed between the perovskite material layer (3) and the thin film layer, and is disposed adjacent to the perovskite material layer (3) and the thin film layer; Wherein, the thin film layer is one or more inorganic thin film layers containing silicon; The thin film layer includes a first inorganic thin film layer (5) and a second inorganic thin film layer (6). The first inorganic thin film layer (5) covers the surface of the aluminum film layer (4), and the second inorganic thin film layer (6) covers the surface of the first inorganic thin film layer (5). The thickness of the first inorganic thin film layer (5) is 0.2 μm to 0.6 μm, and the thickness of the second inorganic thin film layer (6) is 0.2 μm to 0.6 μm. The material of the thin film layer includes SiN. x and at least one of SiO2; The components of the perovskite material layer (3) include a haloperovskite material with the chemical formula ABX3, wherein A includes at least one of methylamine cation, formamidinium cation and cesium cation, B includes at least one of lead cation and tin cation, and X includes at least one of chloride anion, bromide anion and iodide anion; The aluminum film layer (4) is made of at least one of aluminum tape, aluminum foil and aluminum sheet.

2. The encapsulation panel according to claim 1, characterized in that, The perovskite material layer (3) also includes a halide perovskite material with the chemical formula A2CDX6, wherein A includes at least one of methylamine cation, formamidinium cation and cesium cation, C is a silver cation, D includes at least one of bismuth cation, antimony cation and indium cation, and X includes at least one of chloride anion, bromide anion and iodide anion.

3. The encapsulation panel according to claim 1, characterized in that, The packaged panel further includes a substrate (1) and a TFT driver (2), wherein the TFT driver is disposed between the substrate and the perovskite material layer and is adjacent to the substrate and the perovskite material layer.

4. The encapsulation panel according to claim 3, characterized in that, The structure type of the TFT driver (2) includes at least one of the following: etch-blocking structure, top gate structure, and back channel etch structure.

5. A method for preparing a packaged panel as described in any one of claims 1-4, characterized in that, The method includes: A TFT driver device (2) is formed on the surface of the substrate (1), and then a perovskite material layer (3) is formed on the surface of the formed TFT driver device (2) to obtain a functional unit. An aluminum film layer (4) is attached to the surface of the perovskite material layer (3) in the functional unit, and then a first inorganic thin film layer (5) and a second inorganic thin film layer (6) are deposited on the surface of the aluminum film layer (4) to obtain an encapsulated panel that effectively blocks the water and oxygen environment.

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