System and method for signal electron detection

Abstract

Systems and methods of observing a sample using an electron beam device are disclosed. The electron beam device includes an electron source configured to generate a primary electron beam along a primary optical axis (404), and a first electron detector (420) having a first detection layer (421) substantially parallel to the primary optical axis and configured to detect a first portion of a plurality of signal electrons (412) generated from a detection spot on the sample. The method can include generating a plurality of signal electrons and detecting the signal electrons using a first electron detector substantially parallel to the primary optical axis of the primary electron beam. A second detection layer of a second electron detector (407) can be substantially perpendicular to the primary optical axis. By disposing the first electron detector on an inner surface of an electrostatic or magnetic element, the electrostatic element or the magnetic element can be configured to detect backscattered electrons.

Description

[0001] Cross-reference to related applications

[0002] This application claims priority to U.S. Application 62 / 988,282, filed March 11, 2020, which is incorporated herein by reference in its entirety. Technical Field

[0003] The embodiments provided herein disclose a charged particle beam device, and more specifically, a system and method for enhancing the efficiency of signal electron collection in electron microscopy. Background Technology

[0004] In the manufacturing process of integrated circuits (ICs), incomplete or finished circuit components are inspected to ensure they are manufactured according to design and free of defects. Inspection systems utilizing optical microscopes or charged particle (e.g., electron) beam microscopes (such as scanning electron microscopy (SEM)) can be employed. As the physical dimensions of IC components continue to shrink, the accuracy and yield of defect detection and inspection become increasingly important. Although multiple electron detectors can be used to maximize the collection of secondary and backscattered electrons separately, aberrations in the objective assembly and undesirable shielding of signal electrons limit the overall imaging resolution and detection efficiency, rendering the inspection tools insufficient for their intended purpose. Summary of the Invention

[0005] One aspect of this disclosure relates to an electron beam apparatus comprising: an electron source configured to generate a primary electron beam along a principal optical axis; and a first electron detector having a first detector layer substantially parallel to the principal optical axis and configured to detect a first portion of a plurality of signal electrons generated from a detector spot on a sample. The apparatus may further include a second electron detector configured to detect a second portion of the plurality of signal electrons, wherein a second detector layer of the second electron detector is substantially perpendicular to the principal optical axis. The apparatus may further include an objective lens configured to focus the primary electron beam onto the sample, focus the first portion of the plurality of signal electrons onto the first detector layer of the first electron detector, and focus the second portion of the plurality of signal electrons onto the second detector layer of the second electron detector. The first electron detector may include a secondary electron detector, a backscattered electron detector, an electrostatic element, or a magnetic element disposed between the sample and the second electron detector. The first electron detector may be disposed between the sample and the second electron detector and may be positioned along the principal optical axis. The first and second electron detectors may be configured to detect a plurality of signal electrons generated from a detector spot on the sample. The inner surface of the electrostatic element or magnetic element may be configured to facilitate the detection of the first portion of the plurality of signal electrons. Electrostatic components may include beam deflectors or beam intensifiers, and magnetic components may include beam splitters. The inner surface of the beam deflector may include a continuous detector layer or a segmented detector layer, wherein the segmented detector layer of the beam deflector may include multiple detector segments arranged linearly, radially, circumferentially, or azimuthally along the main optical axis. The beam deflector may include a multipole structure, and the inner surface of the poles of the multipole structure may be configured to facilitate the detection of a first portion of multiple signal electrons. The beam intensifier may include an inner surface configured to facilitate the detection of a first portion of multiple signal electrons, wherein the inner surface of the beam intensifier may include a continuous detector layer or a segmented detector layer. The segmented detector layer of the beam intensifier may include multiple detector segments arranged linearly, radially, circumferentially, or azimuthally along the main optical axis. The beam splitter may include an inner surface configured to facilitate the detection of a first portion of multiple signal electrons. The first electron detector may include a single-cell electron detector or a segmented electron detector, wherein the segmented electron detector includes multiple detector segments arranged linearly, radially, circumferentially, or azimuthally along the main optical axis. The first electron detector may include multiple electrostatic or magnetic elements configured to facilitate the detection of multiple signal electrons based on characteristics of the signal electrons, including emission energy, emission polar angle relative to the principal optical axis, or emission azimuth angle. A first portion of the multiple signal electrons may include backscattered electrons, wherein the emission polar angle of the backscattered electrons is in the range of 15° to 65°. The multiple signal electrons may include secondary electrons, backscattered electrons, or Auger electrons.

[0006] One aspect of this disclosure relates to a charged particle beam apparatus comprising: a charged particle source configured to generate a primary charged particle beam along a principal optical axis; and a first charged particle detector having a first detection layer substantially parallel to the principal optical axis and configured to detect a first portion of a plurality of signal charged particles generated from a detection spot on a sample. The apparatus may further include a second charged particle detector configured to detect a second portion of the plurality of signal charged particles, wherein a second detection layer of the second electron detector is substantially perpendicular to the principal optical axis. The apparatus may also include an objective lens configured to focus the primary charged particle beam onto the sample, focus the first portion of the plurality of signal charged particles onto the first detection layer of the first charged particle detector, and focus the second portion of the plurality of signal charged particles onto the second detection layer of the second charged particle detector. The first charged particle detector may include a secondary electron detector, a backscattered electron detector, an electrostatic element, or a magnetic element disposed between the sample and the second charged particle detector. The first charged particle detector may be disposed between the sample and the second charged particle detector and may be positioned along the principal optical axis. First and second charged particle detectors can be configured to detect multiple signal charged particles generated from a detector spot on a sample. The inner surface of an electrostatic or magnetic element can be configured to facilitate the detection of a first portion of the multiple signal charged particles. The electrostatic element may include a beam deflector or beam intensifier, and the magnetic element may include a beam splitter. The inner surface of the beam deflector may include a continuous detector layer or a segmented detector layer, wherein the segmented detector layer of the beam deflector may include multiple detector segments arranged linearly, radially, circumferentially, or azimuthally along the principal optical axis. The beam deflector may include a multipole structure, and the inner surface of the poles of the multipole structure can be configured to facilitate the detection of a first portion of the multiple signal charged particles. The beam intensifier may include an inner surface configured to facilitate the detection of a first portion of the multiple signal charged particles, wherein the inner surface of the beam intensifier may include a continuous detector layer or a segmented detector layer. The segmented detector layer of the beam intensifier may include multiple detector segments arranged linearly, radially, circumferentially, or azimuthally along the principal optical axis. The beam splitter may include an inner surface configured to facilitate the detection of a first portion of the multiple signal charged particles. The first charged particle detector may include a single-unit electronic detector or a segmented electronic detector, wherein the segmented electronic detector includes multiple detector segments arranged linearly, radially, circumferentially, or azimuthally along the principal optical axis. The first electronic detector may include multiple electrostatic or magnetic elements configured to facilitate the detection of multiple signal charged particles based on the characteristics of the signal charged particles, wherein the characteristics of the signal charged particles may include emission energy, emission polar angle relative to the principal optical axis, or emission azimuth angle.The first portion of the plurality of signal charged particles may include backscattered electrons, wherein the emission polar angle of the backscattered electrons is in the range of 15° to 65°. The plurality of signal charged particles may include secondary electrons, backscattered electrons, or Auger electrons.

[0007] Another aspect of this disclosure relates to an electron beam apparatus including an element. The element may include a first electron detector having a first detection layer and a conductive layer. The first detection layer is disposed on an inner surface of the element and configured to detect a first portion of a plurality of signal electrons generated after the primary electron beam interacts with a sample. The conductive layer is deposited on a portion of the inner surface of the first electron detector and configured to deflect the primary electron beam on the sample. The first electron detector includes a diode, a scintillator, a radiation detector, a solid-state detector, or a pin junction diode, and the conductive layer includes a metal film, a semiconductor film, or an electrode. The apparatus may further include a controller having a circuit system configured to apply a voltage signal to the conductive layer to deflect the primary electron beam; and to receive a detection signal generated by the first electron detector in response to the detected plurality of signal electrons, wherein the detection signal includes an electrical signal, an optical signal, a mechanical signal, or a combination thereof. The applied voltage signal may include a scanning deflection voltage configured to scan the primary electron beam along an X-axis, a Y-axis, or both. The circuit system may include readout circuitry configured to transmit data associated with the detection signal to a processor of the electron beam apparatus. The first electron detector may include multiple segments of a segmented electron detector, and these segments may be arranged linearly, circumferentially, radially, or azimuthally along the principal optical axis of the primary electron beam. The circuitry may also be configured to individually apply a scanning deflection voltage to the conductive layer of each segment of the segmented electron detector and receive a corresponding detection signal. The apparatus may further include a second electron detector having a second detection layer and configured to detect a second portion of the plurality of signal electrons, wherein the detection layer is substantially perpendicular to the principal optical axis. The apparatus may also include an objective lens configured to focus the primary electron beam onto the sample, focus a first portion of the plurality of signal electrons onto the first detection layer of the first electron detector, and focus a second portion of the plurality of signal electrons onto the second detection layer of the second electron detector. This element may be disposed between the sample and the second electron detector. The first and second electron detectors may be configured to detect the plurality of signal electrons based on characteristics of the signal electrons, including emission energy, emission polar angle, or emission azimuth angle relative to the principal optical axis. The first portion of the plurality of signal electrons may include backscattered electrons, wherein the emission pole angle of the backscattered electrons is in the range of 15° to 65°. The plurality of signal electrons may include secondary electrons, backscattered electrons, or Auger electrons. The element may include an electrostatic element or a magnetic element. The electrostatic element may include a beam deflector or beam enhancer, and the magnetic element may include a beam splitter. The beam deflector may include an inner surface configured to facilitate the detection of the first portion of the plurality of signal electrons, wherein the inner surface of the beam scanning deflector includes a continuous detection layer or a segmented detection layer.The segmented detector layer of the beam deflector may include multiple detector segments arranged linearly, radially, circumferentially, or azimuthally along the principal optical axis. The beam deflector may include a multipole structure, and the inner surfaces of the poles of the multipole structure may be configured to facilitate the detection of a first portion of multiple signal electrons. The beam intensifier may include an inner surface configured to detect a first portion of multiple signal electrons, wherein the inner surface of the beam intensifier includes a continuous detector layer or a segmented detector layer. The segmented detector layer of the beam intensifier may include multiple detector segments arranged linearly, radially, circumferentially, or azimuthally along the principal optical axis. The beam splitter may include an inner surface configured to facilitate the detection of a first portion of multiple signal electrons.

[0008] Another aspect of this disclosure relates to an element of an electron beam apparatus. The element may include a first electron detector having a first detection layer substantially parallel to the principal optical axis and configured to detect a first portion of a plurality of signal electrons generated after the primary electron beam interacts with a sample; and a conductive layer disposed on a portion of the first detection layer of the first electron detector and configured to deflect the primary electron beam incident on the sample. The first charged particle detector may include a diode, a scintillator, a radiation detector, a solid-state detector, or a pin junction diode. The conductive layer may include a metal film, a doped semiconductor film, or an electrode. The element may be electrically connected to a controller, wherein a voltage signal from the controller is applied to the conductive layer to deflect the primary electron beam; and a detection signal is generated by the first electron detector in response to the detection of the plurality of signal electrons. The detection signal may include an electrical signal, an optical signal, a mechanical signal, or a combination thereof. The applied voltage signal may include a scanning deflection voltage configured to scan the primary electron beam along an X-axis, a Y-axis, or both. The first electron detector may include a plurality of segments of a segmented electron detector, wherein the plurality of segments may be arranged linearly, circumferentially, radially, or azimuthally along the principal optical axis of the primary electron beam. The controller can also be configured to apply a scan deflection voltage individually to the conductive layer of a segment of a segmented electron detector. A first electron detector may be disposed on the inner surface of the element. The element may include an electrostatic element or a magnetic element. The electrostatic element may include a beam deflector or a beam intensifier, and the magnetic element may include a beam splitter. The electrostatic element may include a beam deflector, wherein the beam deflector includes an inner surface configured to facilitate the detection of a first portion of multiple signal electrons. The beam deflector may include an inner surface configured to facilitate the detection of a first portion of multiple signal electrons, wherein the inner surface of the beam scan deflector includes a continuous detection layer or a segmented detection layer. The segmented detection layer of the beam deflector may include multiple detector segments arranged linearly, radially, circumferentially, or azimuthally along the principal optical axis. The beam deflector may include a multipole structure, and the inner surface of the poles of the multipole structure may be configured to facilitate the detection of a first portion of multiple signal electrons. The beam intensifier may include an inner surface configured to detect a first portion of multiple signal electrons, wherein the inner surface of the beam intensifier includes a continuous detection layer or a segmented detection layer. The segmented detector layer of the beam intensifier may include multiple detector segments arranged linearly, radially, circumferentially, or azimuthally along the principal optical axis. The beam splitter may include an inner surface configured to facilitate the detection of a first portion of multiple signal electrons.

[0009] Another aspect of this disclosure relates to a method for observing a sample performed by an electron beam apparatus. The method may include generating a plurality of signal electrons from a probe spot on the sample after interaction with a primary electron beam; and detecting a first portion of the plurality of signal electrons using a first electron detector, the first electron detector including a first probe layer substantially parallel to the principal optical axis of the primary electron beam. The method may further include detecting a second portion of the plurality of signal electrons using a second electron detector, wherein a second probe layer of the second electron detector is substantially perpendicular to the principal optical axis. The first electron detector may include a secondary electron detector, a backscattered electron detector, an electrostatic element, or a magnetic element. In this method, the first electron detector may be positioned between the sample and the second electron detector along the principal optical axis. The method may include detecting the plurality of signal electrons based on the characteristics of the signal electrons among the plurality of signal electrons, wherein the characteristics of the signal electrons may include the emission energy of the signal electrons, and the emission polar angle or emission azimuth angle relative to the principal optical axis. The first portion of the plurality of signal electrons may include backscattered electrons, and wherein the emission polar angle of the backscattered electrons is in the range of 15° to 65°. The electrostatic element may include a beam deflector or beam intensifier, and the magnetic element may include a beam splitter. The method may further include configuring the inner surface of an electrostatic element to detect a first portion of multiple signal electrons, or configuring the inner surface of a beam scanning deflector to detect a first portion of multiple signal electrons. The inner surface of the beam scanning deflector may include a continuous detector layer or a segmented detector layer. The segmented detector layer of the beam scanning deflector may include multiple detector segments arranged linearly, radially, circumferentially, or azimuthally along the principal optical axis. The method may include configuring the inner surface of the poles of the beam deflector to detect a first portion of multiple signal electrons. The method may further include configuring the inner surface of a beam intensifier to detect a first portion of multiple signal electrons, or configuring the inner surface of a beam splitter to detect a first portion of multiple signal electrons.

[0010] Another aspect of this disclosure relates to a method of configuring an element of an electron beam apparatus. The method may include disposing a first electron detector on an inner surface of the element, the first electron detector having a first detection layer configured to detect a first portion of a plurality of signal electrons generated after the primary electron beam interacts with a sample; and depositing a conductive layer on a portion of the inner surface of the first electron detector, the conductive layer being configured to deflect the primary electron beam on the sample. The method may further include configuring a segmented electron detector comprising a plurality of segments, wherein the plurality of segments are arranged linearly, circumferentially, radially, or azimuthally along the principal optical axis of the primary electron beam. Configuring the first electron detector may include forming the first electron detector using techniques including microelectromechanical systems (MEMS) fabrication, semiconductor fabrication, or mechanical coupling. The conductive layer may be deposited using techniques including adhesive bonding, gluing, welding, physical vapor deposition, or chemical vapor deposition. The conductive layer may include a metal film, a semiconductor film, or an electrode. The method may further include electrically connecting the element to a controller configured to apply a voltage signal to the conductive layer to deflect the primary electron beam; and receiving a detection signal generated by the electron detector in response to the detection of the plurality of signal electrons. Applying a voltage signal may include applying a scanning deflection voltage signal configured to scan the primary electron beam along the X-axis, Y-axis, or both. The first portion of detecting multiple signal electrons may be based on characteristics of the signal electrons, including emission energy, emission polar angle relative to the principal optical axis, or emission azimuth angle. The method may further include arranging a first electron detector such that a first detector layer of the first electron detector is positioned substantially parallel to the principal optical axis.

[0011] Another aspect of this disclosure relates to a non-transitory computer-readable medium storing a set of instructions executable by one or more processors of an electron beam apparatus to cause the electron beam apparatus to perform a method of observing a sample. This method may include generating a plurality of signal electrons from a probe spot on the sample after interaction with a primary electron beam; and detecting a first portion of the plurality of signal electrons using a first electron detector, the first electron detector including a first probe layer substantially parallel to the principal optical axis of the primary electron beam. The set of instructions may cause the electron beam apparatus to further perform detection of a second portion of the plurality of signal electrons using a second electron detector, wherein a second probe layer of the second electron detector is substantially perpendicular to the principal optical axis; and to detect the plurality of signal electrons based on characteristics of the signal electrons, including emission energy, emission polar angle, or emission azimuth angle relative to the principal optical axis.

[0012] Other advantages of the embodiments of this disclosure will become apparent from the following description taken in conjunction with the accompanying drawings, in which certain embodiments of the invention are illustrated by way of example. Attached Figure Description

[0013] Figure 1 This is a schematic diagram illustrating an exemplary electron beam detection (EBI) system consistent with embodiments of the present disclosure.

[0014] Figure 2 This is a schematic diagram illustrating an exemplary electron beam tool consistent with embodiments of the present disclosure. The electron beam tool may be... Figure 1 This is part of an exemplary electron beam detection system.

[0015] Figure 3A This is a schematic diagram of an exemplary configuration 300A of a charged particle beam device 40 including a charged particle detector.

[0016] Figure 3B and 3C These are schematic diagrams illustrating exemplary configurations 300B and 300C of a charged particle beam device, including a charged particle detector and an energy filter, respectively.

[0017] Figure 3D This is a schematic diagram illustrating an exemplary configuration 300D of a charged particle beam device 40 including multiple charged particle detectors.

[0018] Figure 4 This is a schematic diagram illustrating an exemplary configuration of a charged particle beam device including a charged particle detector, consistent with embodiments of this disclosure.

[0019] Figure 5 This is a schematic diagram illustrating an exemplary configuration of a charged particle beam device including electrostatic elements, consistent with embodiments of this disclosure.

[0020] Figure 6A and 6B This is a schematic diagram illustrating an exemplary configuration of a portion of the beam enhancement tube of a charged particle beam apparatus consistent with embodiments of the present disclosure.

[0021] Figure 7A This is a schematic diagram of a segmented charged particle detector consistent with an embodiment of the present invention.

[0022] Figures 7B-7D This is a schematic diagram illustrating an exemplary configuration of the detection layer of a charged particle detector consistent with embodiments of this disclosure.

[0023] Figure 8 This is a schematic diagram of an exemplary configuration of a charged particle detection device consistent with embodiments of this disclosure.

[0024] Figure 9 This is a schematic diagram of an exemplary configuration of a charged particle detection device consistent with embodiments of this disclosure.

[0025] Figure 10This indicates a use consistent with the embodiments of this disclosure. Figure 4 A flowchart illustrating an exemplary method for forming an image of a sample using a charged particle beam device.

[0026] Figure 11 This is a process flowchart illustrating an exemplary method for configuring electrostatic elements of an electron beam apparatus consistent with embodiments of this disclosure. Detailed Implementation

[0027] Exemplary embodiments will now be described in detail, examples of which are illustrated in the accompanying drawings. The following description refers to the accompanying drawings, wherein the same numerals in different drawings denote the same or similar elements unless otherwise stated. The implementations set forth in the following description of the exemplary embodiments do not represent all implementations. Rather, they are merely examples of apparatuses and methods consistent with aspects related to the disclosed embodiments as described in the appended claims. For example, although some embodiments are described in the context of utilizing electron beams, this disclosure is not limited thereto. Other types of charged particle beams can be similarly applied. Furthermore, other imaging systems, such as optical imaging, light detection, X-ray detection, etc., can be used.

[0028] Electronic devices consist of circuits formed on a silicon wafer called a substrate. Many circuits can be formed together on the same piece of silicon and are called integrated circuits or ICs. The size of these circuits has been reduced dramatically, allowing many of them to be mounted on the substrate. For example, the IC chip in a smartphone can be as small as a thumbnail and can include more than 2 billion transistors, each less than 1 / 1000th the size of a human hair.

[0029] Manufacturing these extremely small ICs is a complex, time-consuming, and expensive process, typically involving hundreds or even thousands of individual steps. Even a mistake in one step can result in a defective IC, rendering it useless. Therefore, one goal of the manufacturing process is to avoid such defects in order to maximize the number of functional ICs produced in the process, i.e., to improve the overall yield of the process.

[0030] One aspect of improving yield is monitoring the chip manufacturing process to ensure that a sufficient number of functional integrated circuits are produced. One way to monitor this process is to inspect the chip circuit structure at various stages of its formation. This inspection can be performed using a scanning electron microscope (SEM). SEMs are used to image these extremely small structures, essentially taking "photographs" of them. This image can be used to determine if the structure is formed correctly and in the correct location. If the structure is defective, the process can be adjusted to make the defect less likely to recur.

[0031] The accuracy and reliability of SEM inspection of high-density IC chips may depend on factors such as the system's imaging resolution. One way to obtain and maintain high imaging resolution is to maximize the collection efficiency of signal electrons, such as secondary electrons (SE) and backscattered electrons (BSE). When a primary electron strikes the surface of a sample, it interacts with a given volume of sample based on factors such as landing energy, sample material, and spot size, generating multiple signal electrons. SEs, generated by the inelastic interaction between the electron beam and the sample, have lower energies and originate from the surface or near-surface region of the sample. BSEs, generated by the elastic collisions of electrons from the electron beam with atoms, have higher energies and typically originate from deeper regions within the interaction volume, thus providing information related to the composition and distribution of the material. Therefore, maximizing the detection of backscattered electrons may be desirable to obtain high-resolution images of potential defects.

[0032] The collection efficiency of both SE and BSE can be improved using more than one detector, which is advantageously positioned to collect as many electrons as possible. However, one of the challenges may include effectively detecting BSE at moderate emission angles. This is likely desirable, as backscattered electrons with emission angles in the range of 15°–65° account for approximately 75% of the total BSE produced.

[0033] In conventional SEM, one way to improve the collection efficiency of BSEs (Browser Electrons) can be to adjust the position of the electron detector to capture BSEs with a wide range of emission angles. While the collection efficiency for BSEs with small and large emission angles can be improved, the collection efficiency for BSEs with medium emission angles remains low. Alternatively, the aperture size of the electron detector can be reduced to increase the likelihood of detecting BSEs with medium emission angles; however, this may increase objective aberrations and thus negatively impact imaging resolution. Therefore, it may be desirable to use techniques that improve collection efficiency while maintaining high imaging resolution to detect BSEs with medium emission angles.

[0034] Some embodiments of this disclosure relate to charged particle beam apparatuses and methods for forming sample images. The apparatus may include an electron detector having an electron detection layer substantially parallel to the principal optical axis, enabling the detection of substantially all or most beam-emitter-sounding (BSE) beams with moderate emission angles. In some embodiments, electrostatic elements (such as deflectors of a deflection scanning unit, beam intensifiers, or beam splitters) may be configured to detect BSEs by disposing a charged particle detector on the inner surface of the electrostatic element and depositing a thin conductive layer to deflect the primary incident beam on the sample. The detection layer of the charged particle detector may be configured to be substantially parallel to the principal optical axis, enabling the detection of substantially all BSEs with moderate emission angles.

[0035] For clarity, the relative dimensions of components in the accompanying drawings may be enlarged. In the following description of the drawings, the same or similar reference numerals denote the same or similar components or entities, and only differences with respect to the various embodiments are described. As used herein, unless specifically stated otherwise, the term "or" covers all possible combinations unless impractical. For example, if it is indicated that a component may include A or B, then unless specifically stated or impractical, the component may include A or B, or A and B. As a second example, if it is indicated that a component may include A, B, or C, then unless specifically stated or impractical, the component may include A, or B, or C, or A and B, or A and C, or B and C, or A and B and C.

[0036] For reference Figure 1 This illustrates an exemplary electron beam detection (EBI) system 100 consistent with embodiments of this disclosure. For example... Figure 1 As shown, the charged particle beam detection system 100 includes a main chamber 10, a load-locking chamber 20, an electron beam tool 40, and an equipment front-end module (EFEM) 30. The electron beam tool 40 is located within the main chamber 10. Although the description and figures relate to electron beams, it should be understood that these embodiments are not intended to limit this disclosure to specific charged particles.

[0037] EFEM 30 includes a first loading port 30a and a second loading port 30b. EFEM 30 may include additional loading ports. The first loading port 30a and the second loading port 30b receive a front-open standard wafer cassette (FOUP) containing a wafer to be inspected (e.g., a semiconductor wafer or a wafer made of other materials) or a sample (wafers and samples are collectively referred to as “wafers” below). One or more robotic arms (not shown) in EFEM 30 transfer the wafer to a load-locking chamber 20.

[0038] A load-locking chamber 20 is connected to a load / locking vacuum pump system (not shown), which removes gas molecules from the load-locking chamber 20 to achieve a first pressure below atmospheric pressure. After reaching the first pressure, one or more robotic arms (not shown) transfer the wafer from the load-locking chamber 20 to the main chamber 10. The main chamber 10 is connected to a main chamber vacuum pump system (not shown), which removes gas molecules from the main chamber 10 to achieve a second pressure below the first pressure. After reaching the second pressure, the wafer is inspected by an electron beam tool 40. In some embodiments, the electron beam tool 40 may include a single-beam inspection tool.

[0039] The controller 50 can be electrically connected to the electron beam tool 40, or to other components. The controller 50 can be a computer configured to perform various controls of the charged particle beam detection system 100. The controller 50 may also include processing circuitry configured to perform various signal and image processing functions. Although the controller 50 is... Figure 1 The controller 50 is shown outside the structure including the main chamber 10, the load locking chamber 20 and the EFEM 30, but it should be understood that the controller 50 may be part of the structure.

[0040] While this disclosure provides an example of a main chamber 10 for housing an electron beam detection system, it should be noted that aspects of this disclosure are not limited, in their broadest sense, to the chamber housing the electron beam detection system. Rather, it should be understood that the foregoing principles can also be applied to other chambers.

[0041] Now for reference Figure 2 It illustrates a schematic diagram of an exemplary configuration of an electron beam tool 40 consistent with embodiments of the present disclosure, which may be... Figure 1 This is part of an exemplary charged particle beam detection system 100. An electron beam tool 40 (also referred to herein as apparatus 40) may include an electron emitter, which may include a cathode 203, an anode 220, and a gun aperture 222. The electron beam tool 40 may also include a coulomb aperture array 224, a converging lens 226, a beam-limiting aperture array 235, an objective lens assembly 232, and an electron detector 244. The electron beam tool 40 may also include a sample holder 236 supported by a motorized stage 234 to hold the sample 250 to be detected. It should be understood that other related components may be added or omitted as needed.

[0042] In some embodiments, the electron emitter may include a cathode 203 and an extractor anode 220, wherein primary electrons may be emitted from the cathode and extracted or accelerated to form a primary electron beam 204, which forms a primary beam cross 202 (virtual or real). The primary electron beam 204 may be visualized as being emitted from the primary beam cross 202.

[0043] In some embodiments, the electron emitter, converging lens 226, objective lens assembly 232, beam-limiting aperture array 235, and electron detector 244 may be aligned with the primary optical axis 201 of the device 40. In some embodiments, the electron detector 244 may be positioned offset from the primary optical axis 201 along a secondary optical axis (not shown).

[0044] In some embodiments, objective assembly 232 may include a modified oscillating decelerated immersion objective (SORIL) comprising electrodes 232a, control electrodes 232b, deflectors 232c (or more than one deflector), and excitation coil 232d. During general imaging, a primary electron beam 204 emanating from the tip of cathode 203 is accelerated by an accelerating voltage applied to anode 220. A portion of the primary electron beam 204 passes through the apertures of gun aperture 222 and coulomb aperture array 224 and is focused by converging lens 226 so that it passes wholly or partially through the aperture of beam-limiting aperture array 235. Electrons passing through the aperture of beam-limiting aperture array 235 can be focused by the modified SORIL lens to form a probe spot on the surface of sample 250 and deflected by deflector 232c to scan the surface of sample 250. Secondary electrons emanating from the sample surface can be collected by electron detector 244 to form an image of the scanned region of interest.

[0045] In objective assembly 232, excitation coil 232d and electrode 232a generate a magnetic field that begins at one end of electrode 232a and terminates at the other end. A portion of sample 250 scanned by primary electron beam 204 can be immersed in the magnetic field and charged, which in turn generates an electric field. The electric field reduces the energy of the primary electron beam 204 impacting the vicinity and surface of sample 250. Control electrode 232b, electrically isolated from electrode 232a, controls the electric field above and on sample 250 to reduce aberrations in objective assembly 232 and control the focusing of the signal electron beam for high detection efficiency. Deflector 232c can deflect primary electron beam 204 to facilitate electron beam scanning on the wafer. For example, during scanning, deflector 232c can be controlled to deflect primary electron beam 204 to different positions on the top surface of sample 250 at different time points to provide data for image reconstruction of different portions of sample 250.

[0046] When the primary electron beam 204 is received, backscattered electrons (BSE) and secondary electrons (SE) can be emitted from a portion of the sample 250. A beam splitter (not shown) can guide the secondary or scattered electron beam, including backscattered and secondary electrons, to the sensor surface of the electron detector 244. The detected secondary electron beam can form a corresponding secondary electron beam spot on the sensor surface of the electron detector 244. The electron detector 244 can generate a signal (e.g., voltage, current) representing the intensity of the received secondary electron beam spot and provide this signal to a processing system such as the controller 50. The intensity of the secondary or backscattered electron beam and the resulting beam spot can vary depending on the external or internal structure of the sample 250. Furthermore, as described above, the primary electron beam 204 can be deflected to different positions on the top surface of the sample 250 to produce secondary or scattered electron beams (and resulting beam spots) of different intensities. Therefore, by mapping the intensity of the secondary electron beam spot to the position of the primary electron beam 204 on the sample 250, the processing system can reconstruct an image of the sample 250 reflecting the internal or external structure of the sample 250.

[0047] In some embodiments, controller 50 may include an image processing system comprising an image acquirer (not shown) and a memory (not shown). The image acquirer may include one or more processors. For example, the image acquirer may include a computer, server, mainframe, terminal, personal computer, any type of mobile computing device, or a combination thereof. The image acquirer may be communicatively coupled to the electron detector 244 of device 40 via a medium such as an electrical conductor, fiber optic cable, portable storage medium, IR, Bluetooth, Internet, wireless network, radio, or a combination thereof. In some embodiments, the image acquirer may receive signals from the electron detector 244 and may construct an image. Thus, the image acquirer may acquire an image of a region of sample 250. The image acquirer may also perform various post-processing functions, such as generating contours, overlaying indicators on the acquired image, etc. The image acquirer may be configured to perform adjustments such as brightness and contrast of the acquired image. In some embodiments, the memory may be a storage medium such as a hard disk, flash drive, cloud storage, random access memory (RAM), other types of computer-readable storage, etc. The memory may be coupled to the image acquirer and may be used to save scanned raw image data as both raw and post-processed images.

[0048] In some embodiments, controller 50 may include measurement circuitry (e.g., an analog-to-digital converter) to obtain the distribution of detected secondary electrons. Electron distribution data collected during the detection time window, combined with corresponding scan path data of the primary beam 204 incident on the surface of the sample (e.g., a wafer), can be used to reconstruct an image of the wafer structure under inspection. The reconstructed image can be used to reveal various features of the internal or external structure of sample 250, and therefore can be used to reveal any defects that may exist in sample 250 (such as a wafer).

[0049] In some embodiments, the controller 50 may control the motorized stage 234 to move the sample 250 during detection. In some embodiments, the controller 50 may enable the motorized stage 234 to move the sample 250 continuously in one direction at a constant speed. In other embodiments, the controller 50 may enable the motorized stage 234 to change the speed of movement of the sample 250 over time according to the steps of the scanning process.

[0050] Now for reference Figure 3A This illustrates a schematic diagram of an exemplary configuration 300A of a charged particle beam apparatus 40 including a charged particle detector. In some conventional SEMs, configuration 300A of apparatus 40 may include an electron source 301 configured to emit primary electrons from a cathode and extract them to form a primary electron beam 302, which is emitted along a principal optical axis 304 from a primary beam cross (virtual or real) 303. Apparatus 40 may also include a converging lens 305, a beam-limiting aperture array 306, an in-lens electron detector 307, a scanning deflection unit 309, and an objective lens assembly 310. In the context of this disclosure, an in-lens electron detector refers to a charged particle detector (e.g., an electron detector) located inside the electro-optic column of the SEM and arranged rotationally symmetrically about a principal optical axis (e.g., principal optical axis 304). In some embodiments, it may also be referred to as a through-the-lens, an immersion lens detector, an upper detector, or a second electron detector. It should be understood that phase components may be added, omitted, or rearranged as appropriate.

[0051] In the existing SEMs, such as Figure 3AAs shown, the primary electron beam 302 can be emitted from the electron source 301 and accelerated to higher energies by the anode. The gun aperture limits the current of the primary electron beam 302 to a desired value. The primary electron beam 302 can be focused by a converging lens 305 and an objective lens assembly 310 to form a small probe spot on the surface of the sample 308. The focusing capability of the converging lens 305 and the aperture size of the beam-limiting aperture array 306 can be selected to obtain the desired probe current and minimize the probe spot size. To obtain a small spot size over a wide range of probe currents, the beam-limiting aperture array 306 can include multiple apertures of various sizes. For example, aperture 306-1 of the beam-limiting aperture array 306 can be configured to generate a primary electron beam wave 302-1 by blocking peripheral electrons of the primary electron beam 302, based on the desired probe current or probe spot size. One or more deflectors of the scanning deflection unit 309 can be configured to deflect the primary electron beam 302 to scan a desired area on the surface of the sample 308. Figure 3A As shown, the interaction between the primary electron beam 302-1 and the sample 308 produces SE and BSE. Secondary electrons can be identified as signal electrons with low emission energy, and backscattered electrons can be identified as signal electrons with high emission energy. Due to their low emission energy, objective assembly 310 can strongly focus the SE (e.g., along electron paths 311-1 or 311-2) to fall primarily on the detector layer of in-lens detector 307. Due to their high emission energy, objective assembly 310 can weakly focus the BSE. Therefore, BSE with small emission angles can travel along electron paths 312-1 and 312-2 and can also be detected by in-lens electron detector 307. In some cases, additional electron detectors, such as backscattered electron detectors, can be used to detect BSE with large emission angles (e.g., 312-3), or the BSE may remain undetected, resulting in a loss of resolution or a lack of information needed to detect the sample.

[0052] The detection and assessment of defects in semiconductor manufacturing processes (such as buried particles during photolithography, metal deposition, dry etching, or wet etching) can benefit from the detection of sample surface features and the compositional analysis of features beneath the sample surface. In this context, users can utilize information obtained from secondary electron detectors and backscattered electron detectors to identify defects, analyze their composition, and adjust process parameters based on the obtained information.

[0053] As is well known in the art, the emission of SE and BSE follows Lambert's law and exhibits large energy diffusion. When the primary electron beam 302 interacts with the sample 308, SES and BSE are generated from different depths of the sample and have different emission energies. For example, secondary electrons originate from the surface and can have emission energies ≤50 eV. SE can be used to provide information about surface features or surface geometry. On the other hand, BSE can be generated by elastic scattering events of incident electrons from the primary electron beam 302 and can have higher emission energies than SE, ranging from 50 eV to approximately the landing energy of the incident electrons, and provides compositional information about the material being detected. The number of backscattered electrons produced can depend on a variety of factors, including but not limited to the atomic number of the material in the sample, the landing energy of the primary electron beam, etc.

[0054] Based on differences in emitted energy or emission angle, SE and BSE can be detected individually using separate electronic detectors, segmented electronic detectors, energy filters, etc. For example, Figure 3A As shown, the in-lens electronic detector 307 can be configured as a segmented detector (see later). Figure 7A (Discussion) The segmented detector comprises multiple segments arranged in a two-dimensional or three-dimensional configuration. In some cases, the segments of the in-lens electronic detector 307 can be arranged radially, circumferentially, or azimuthally around the principal optical axis 304.

[0055] Configuration 300A may include a converging lens 305 configured to focus a primary electron beam 302 such that a portion 302-1 is permissible through an on-axis opening 306-1 of the beam-limiting aperture array 306. The converging lens 305 may be substantially similar to... Figure 2 The converging lens 226 can perform similar functions. The converging lens 305 may include electrostatic, magnetic, or composite electromagnetic lenses, etc. The converging lens 305 can be electrically or communicatively connected to a controller, such as... Figure 2 The controller 50 shown can apply an electrical excitation signal to the converging lens 305 to adjust the focusing capability of the converging lens 305 based on factors including but not limited to operating mode, application, desired analysis, and sample material being tested.

[0056] Configuration 300A may further include a scan deflection unit 309 configured to dynamically deflect a primary electron beam 302 or a primary electron beam wave 302-1 on the surface of sample 308. Dynamic deflection of the primary electron beam wave 302-1 can result in the desired region or desired region of interest being scanned (e.g., in raster scan mode) to generate SE and BSE for sample detection. Scan deflection unit 309 may include one or more deflectors (e.g., Figure 3B(Deflectors 309-1 or 309-2, discussed later), one or more deflectors are configured to deflect the primary electron beam 302 along the X-axis or Y-axis. As used herein, the X-axis and Y-axis form a Cartesian coordinate system, and the primary electron beam 302 propagates along the Z-axis or principal optical axis 304. The X-axis refers to the horizontal axis or transverse axis extending along the width of the paper, and the Y-axis refers to the vertical axis extending inward and outward in the plane of the paper.

[0057] Electrons are negatively charged particles that pass through an electron beam at high energy and high speed. One way to deflect electrons is to pass them through an electric field, such as one generated by a pair of plates held at two different potentials, or by passing current through a deflection coil. Changing the electric field across the deflector can alter the deflection angle of electrons in the primary electron beam 302 based on factors including, but not limited to, electron energy, the applied electric field, and the size of the deflector. In some cases, the scanning deflection unit 309 may include more than one deflector. One or more deflectors of the scanning deflection unit 309 may be located within the objective lens assembly 310.

[0058] Configuration 300A may also include an objective lens assembly 310 configured to focus a primary electron beam 302 or a primary electron beam wave 302-1 onto the surface of sample 308. Objective lens assembly 310 may also be configured to focus signal electrons (e.g., secondary electrons) with low emission energy onto a signal electron detector (e.g., [missing information]). Figure 3A The objective lens assembly 310 is located on the detector layer of the in-lens electronic detector 307. Figure 2 The objective lens assembly 232 is substantially similar to or performs substantially similar functions.

[0059] Now for reference Figure 3B It shows a schematic diagram of an exemplary configuration 300B of a charged particle beam device 40 including a charged particle detector and an energy filter. Figure 3B As shown, configuration 300B may include a magnetic objective lens assembly 310 and deflectors 309-1 and 309-2. In some embodiments, the objective lens assembly 310 may include a compound electromagnetic lens comprising a control electrode 313, an inner pole piece of the objective lens assembly 310 (e.g., ...), Figure 2 The magnetic lens 310M and the electrostatic lens are formed by the electrode 232a and the sample 308.

[0060] One of several methods for detecting signal electrons such as SE and BSE based on emission energies includes passing signal electrons generated from a probe spot on sample 308 through an energy filter. In some embodiments, control electrode 313 may include an energy filter between sample 308 and in-lens electron detector 307. In some embodiments, control electrode 313 may be disposed between sample 308 and magnetic lens 310M of objective assembly 310. Control electrode 313 may be biased relative to the sample to form a potential barrier for signal electrons with a threshold emission energy. For example, control electrode 313 may be negatively biased relative to sample 308, causing negatively charged signal electrons (e.g., secondary electrons in path 311) to deflect back to sample 308. Thus, only signal electrons with sufficiently high emission energy (e.g., backscattered electrons in path 312) that overcome the energy barrier formed by control electrode 313 propagate to in-lens electron detector 307. In some embodiments, in-lens electron detector 307 may be configured as a secondary electron detector or a backscattered electron detector. It should be understood that 311 and 312 represent the paths of secondary electrons and backscattered electrons, respectively.

[0061] Now for reference Figure 3C It shows a schematic diagram of an exemplary configuration 300C of a charged particle beam device 40 including a charged particle detector and an energy filter. Figure 3B Compared to configuration 300B, configuration 300C includes an energy filter disposed near the electron detector 307 within the lens. For example... Figure 3C The energy filter shown may include, for example, a mesh electrode 314 configured to deflect signal electrons with low emission energy (e.g., secondary electrons in path 311) back to sample 308 or objective assembly 310, and allow signal electrons with high emission energy (e.g., backscattered electrons in path 312) to be incident on the detector layer of the in-lens electron detector 307. In some embodiments, the mesh electrode 314 may include a mesh structure made of a conductive material, including but not limited to metals, alloys, semiconductors, composite materials, etc. The mesh electrode 314 may be disposed between the objective assembly 310 and the in-lens electron detector 307. In some embodiments, the mesh electrode 314 may be disposed closer to the in-lens electron detector 307 than the objective assembly 310.

[0062] Now for reference Figure 3D It shows a schematic diagram of an exemplary configuration 300D of a charged particle beam device 40 including multiple charged particle detectors. Figures 3A-3C compared to, Figure 3DConfiguration 300D includes a backscattered electron detector 315 configured to detect signal electrons with high emission energy and a high emission polar angle. In the context of this disclosure, the emission polar angle is relative to the principal optical axis substantially perpendicular to the sample 308 (e.g., ...). Figures 3A-3D The emission angles of the secondary electrons in paths 311-1 and 311-2 are smaller than those of the secondary electrons, while those in paths 312-1, 312-2, and 312-3 are larger. A backscattered electron detector 315 can be placed between the objective lens assembly 310 and the sample 308, and an in-lens electron detector 307 can be placed between the objective lens assembly 310 and the converging lens (not shown, e.g., ...). Figure 3A Between the converging lens 305, it is possible to detect secondary electrons as well as backscattered electrons.

[0063] In single charged particle beam devices (such as single-beam SEM), the collection efficiency for BSE can be improved by using energy filters, additional electron detectors, and adjusting the position and size of existing electron detectors (as referenced). Figures 3A-3D (as described above). However, the improvement in BSE collection efficiency may not be sufficient to obtain high-resolution images that allow users to detect micro or nano defects.

[0064] As an example, such as Figure 3A As shown, the electronic detector is placed in the objective lens assembly (e.g., Figure 3A The objective assembly 310 can collect only a portion of the BSE with small emission polar angles, which are identified as BSEs in paths 312-1 and 312-2. BSEs with larger emission polar angles (such as BSEs in path 312-3) may be lost and remain undetected, resulting in poor BSE collection efficiency.

[0065] As an alternative to placing the electronic detector above the objective lens, the electronic detector can also be placed below the objective lens to capture BSEs with large emission polar angles, such as... Figure 3D As shown. While useful in improving BSE collection efficiency, this arrangement may still not be suitable for maximizing BSE collection efficiency. The SE and BSE have a Lambertian emission distribution, making the yield proportional to cos(θ), where θ is the emission polar angle relative to the sample surface normal. Due to the cosine angular distribution of emission, the number of signal electrons with small and large emission polar angles is lower compared to the number of signal electrons with medium emission polar angles. Although signal electrons with medium emission angles can be collected by reducing the aperture size of the electron detector below the objective assembly, this may negatively affect objective aberrations, thus impacting image resolution.

[0066] In such Figure 3B and 3C In other configurations shown, the control electrode can be implemented as an energy filter to separate the SE from the BSE, and thus improve the individual collection efficiency. However, placing the negatively biased energy filter closer to the sample (e.g.) Figure 3B (As shown) This may increase aberrations in the objective lens assembly, thus adversely affecting imaging resolution. Alternatively, the energy filter can be placed closer to the electronic detector within the lens (e.g., Figure 3C The mesh electrode 314 shown is positioned to minimize the effect of the bias applied to the energy filter on the aberrations of the objective assembly. However, in this configuration, a shielding mesh (not shown) is typically used at the entrance of the energy filter (where the signal electrons enter) to avoid the influence of the energy filter on the primary electron beam. Some signal electrons may be blocked or scattered by the shielding mesh and may not enter the energy filter. Therefore, the collection efficiency is reduced. Therefore, in some configurations, the in-lens detector and energy filter are positioned off-axis, and a beam splitter can be used to deflect the incident signal electrons toward the energy filter. The beam splitter may add undesirable aberrations to the incident primary electron beam, thus negatively impacting the imaging resolution.

[0067] Now for reference Figure 4 It illustrates embodiments consistent with those of this disclosure, including charged particle detectors. Figure 1 An exemplary configuration 400 of the charged particle beam device 40. The charged particle beam device 40 (also referred to herein as device 40) in configuration 400 may include an in-lens electron detector 407 (similar to...). Figures 3A-3D The in-lens electron detector 307, wherein the primary electron beam (not shown) propagates along the principal optical axis 404 and uses the objective lens assembly 410 (similar to...) Figures 3A-3D The objective lens assembly 310 is focused onto the sample 408. In addition to the in-lens electron detector 407, the charged particle beam device 40 may also include a signal electron detector 420 having an electron detection layer 421, which is configured to detect signal electrons with high emission energy and moderate emission polar angles, such as BSEs generated from the detection spot on the sample 408 (BSEs in paths 412-1 and 412-2) when interacting with incident electrons from the primary electron beam 402 (not shown).

[0068] In some embodiments, the signal electron detector 420 may be positioned such that the electron detection layer 421 of the signal electron detector 420 is substantially perpendicular to the plane of the sample 408. In some embodiments, the signal electron detector 420 may be positioned such that the electron detection layer 421 of the signal electron detector 420 is substantially parallel to the principal optical axis 404. In some embodiments, the electron detection layer 421 may include or be disposed on the inner surface of the signal electron detector 420. As used herein, an inner surface refers to a surface close to the principal optical axis or a surface directly exposed to incident primary electrons, secondary electrons, or backscattered electrons.

[0069] In some embodiments, the signal electron detector 420 may include a vertical secondary electron detector, a vertical backscattered electron detector, or a vertical electrostatic element of the detection device 40 configured to detect a portion of the signal electrons generated from the sample 408. In some embodiments, although not shown, more than one vertical signal electron detector 420 may be employed based on factors including, but not limited to, design and space availability, desired imaging resolution, and desired BSE collection efficiency. In this configuration, signal electrons with a range of emission polar angles can be detected individually.

[0070] In some embodiments, the signal electron detector 420 can be configured to detect a portion of the signal electron based on the characteristics of the signal electron. These characteristics may include, but are not limited to, emission energy, emission polar angle, emission azimuth angle, etc. For example, the vertical signal electron detector 420 can be configured to detect signal electrons with high emission energy (>50 eV) and a moderate emission polar angle in the range of 15° to 65° relative to the principal optical axis 404. In some embodiments, based on the number of signal electron detectors 420 used, they can be positioned such that they are configured to detect signal electrons with a predefined range of emission polar angles. As an example, signal electron detector 420-1 (not shown) can be configured to detect a portion of the signal electron with high emission energy and an emission polar angle in the range of 15° to 40°, and another signal electron detector 420-2 (not shown) can be configured to detect a portion of the signal electron with high emission energy and an emission polar angle in the range of 40° to 65°. It is understood that the number, position, and type of signal electron detectors 420 can be appropriately adjusted as needed.

[0071] In some embodiments, the signal detector 420 may be disposed between the objective lens assembly 410 and the in-lens detector 407. In some embodiments, the signal detector 420 may be disposed between the sample 408 and the in-lens detector 407. In some embodiments, more than one signal detector 420 may be disposed between the sample 408 and the in-lens detector 407.

[0072] In some embodiments, the signal electron detector 420 may include a single-unit electron detector or a segmented electron detector. In a single-unit electron detector, the electron detection layer 421 may include a non-segmented layer of charged particle-sensitive material. In a segmented electron detector, the electron detection layer 421 may include discontinuous layers of charged particle-sensitive material, forming segments of the segmented electron detector. The segments of the segmented electron detector may be arranged in a two-dimensional (2D) or three-dimensional (3D) arrangement around the principal optical axis 404. The segments of the segmented electron detector may be arranged linearly, radially, circumferentially, or azimuthally around the principal optical axis 404. The charged particle-sensitive material may be sensitive to charged particles (such as ionizing radiation, electrons, X-rays, photons, etc.).

[0073] Now for reference Figure 5 It illustrates an embodiment including an electrostatic element consistent with the embodiments of this disclosure. Figure 1 An exemplary configuration 500 of the charged particle beam device 40 is provided. Compared to configuration 400, the charged particle beam device 40 in configuration 500 (also referred to herein as device 40) may include an electrostatic or magnetic element 520 having an electron detection layer 521 configured to detect signal electrons with high emission energy and moderate emission polarity, such as BSEs generated from a detection spot on a sample 508 (BSEs in paths 512-1 and 512-2) when interacting with incident electrons of a primary electron beam 502 (not shown). It should be understood that device 40 may suitably include one or more electrostatic or magnetic elements 520.

[0074] In some embodiments, the electrostatic or magnetic element 520 may include a scanning deflection unit (e.g., Figure 3A and 3B The scanning deflection unit 309, beam intensifier, or beam splitter, etc., may be used. An electrostatic or magnetic element 520 may be disposed between the sample 508 and the in-lens electron detector 507 along the main optical axis 504. In some embodiments, the electrostatic element 520, the objective lens assembly 510, and the in-lens electron detector 507 may be aligned with and rotationally symmetrical about the main optical axis 504.

[0075] In some embodiments, an electrostatic or magnetic element 520 may be positioned such that the electron detection layer 521 of the electrostatic or magnetic element 520 is substantially perpendicular to the plane of the sample 508. In some embodiments, the electrostatic or magnetic element 520 may be positioned such that the electron detection layer 521 of the electrostatic or magnetic element 520 is substantially parallel to the principal optical axis 504. In some embodiments, the electron detection layer 521 may comprise the inner surface of the electrostatic or magnetic element 520, or may be disposed on the inner surface of the electrostatic or magnetic element 520, or may be disposed on a portion of the inner surface of the electrostatic or magnetic element 520.

[0076] In some embodiments, the electrostatic or magnetic element 520 can be configured to detect a portion of the signal electrons based on the characteristics of the signal electrons. These characteristics may include, but are not limited to, emission energy, emission polarity, emission azimuth, etc. For example, the vertical electrostatic or magnetic element 520 can be configured to detect signal electrons with high emission energy (>50 eV) and a moderate emission polarity in the range of 15° to 65° relative to the principal optical axis 504.

[0077] In some embodiments, one or more electrostatic or magnetic elements 520 may include one or more deflectors of the scanning deflection unit 309 (e.g., Figure 3B The deflectors 309-1 and 309-2 are configured to detect BSEs with high emission energy and medium emission pole angles. In such a configuration, the deflectors can perform both BSE detection and primary electron beam (e.g., Figure 3A The primary electron beam 302 is deflected. The electron detection layer 521 of the electrostatic or magnetic element 520 may include one or more deflectors configured as an inner surface of a charged particle sensitive surface. Details of the configuration of the electrostatic or magnetic element 520 or the inner surface of the electrostatic or magnetic element 520 will be referenced later. Figure 8 and 9 discuss.

[0078] In some embodiments, the inner surface of the deflector or deflection scanning unit may be segmented in the circumferential direction, such that the inner surface of the poles of the deflector's multi-pole structure is configured to detect the BSE. In some embodiments, each pole of the deflector's multi-pole structure is configured to detect the BSE.

[0079] In some embodiments, the electrostatic or magnetic element 520 may include a beam splitter (such as a Wien filter). The inner surface of the beam splitter may be configured to detect BSE. It should be understood that any electrostatic or magnetic element disposed between the sample 508 and the in-lens electron detector 507 may be suitably configured to detect BSE.

[0080] Now for reference Figure 6A and 6BThis illustrates a schematic diagram of an exemplary configuration of a portion of a beam enhancer consistent with embodiments of the present disclosure. Figure 6A As shown, Figure 1 The device 40 may include a beam intensifier 620 configured to maintain the energy of primary electrons that propagate downwards along the electro-optic column of the SEM and decelerate to a desired energy shortly before impacting the sample 608. In conventional SEMs, when primary electrons are accelerated to several keV to pass through the electro-optic column, the Coulomb effect (electron interaction) can cause electrons to focus above or below the sample surface, resulting in an increase in spot size and a loss of imaging resolution. By biasing the beam intensifier 620 to a position greater than the electro-optic column (such as...) Figure 6A The high potential of the magnetic objective lens 610M can reduce the Coulomb effect by, for example, reducing the spot size on the surface of the sample 608. Furthermore, it may be preferable to reduce the energy of the incident primary electrons to minimize physical damage to the sample 608 while maintaining the spot size.

[0081] In some embodiments, the inner surface 621 of the beam enhancer 620 may be configured to detect signal electrons with high emission energy and moderate emission polar angle, such as BSE generated from a probe spot on the sample 608 when interacting with incident electrons of the primary electron beam 602 (not shown) (e.g., BSE in paths 612-1 and 612-2).

[0082] Figure 6A A non-segmented layer of charged particle-sensitive material is shown on the inner surface 621 (also referred to as the electron detection layer 621) of a portion of the beam intensifier 620 within the magnetic objective lens 610M. In some embodiments, the inner surface 621 of the beam intensifier 620 may extend in length to detect substantially all BSEs with high emission energies and moderate emission angles, thereby maximizing BSE collection efficiency and thus improving imaging resolution.

[0083] Figure 6B A discontinuous layer of charged particle-sensitive material is shown on the inner surface of a portion of the beam intensifier 620 disposed within the magnetic objective lens 610M. This discontinuous coverage of the inner surface can form multiple segments 621-1, 621-2, and 621-3 configured to detect BSEs in paths 612-1, 612-2, and 612-3, respectively. The segmented inner surface 621 of the beam intensifier 620 can be used to detect BSEs with emission polarity and emission energy ranges. It should be understood that, although... Figure 6B The linear arrangement of segments 621-1, 621-2 and 621-3 along the principal optical axis 604 is shown, but other suitable arrangements are also possible.

[0084] Now for reference Figure 7AThe diagram illustrates a segmented electron detector 720 consistent with embodiments of the present disclosure. The segmented electron detector 720 may include components configured to allow a primary electron beam (e.g., Figure 3A The primary electron beam 302 passes through an opening 730, and multiple segments 720-1-720-5. In some embodiments, the segmented electron detector 720 may be placed on the sample (e.g., Figure 3A Sample 308) and the in-lens electronic detector (e.g., Figure 3A The in-lens electronic detector 307 or objective lens assembly ( Figure 3A The backscattered electron detector (e.g., between the objective lens assembly 310) and the backscattered electron detector. Figure 3D The backscattered electron detector 315 can be an in-lens electron detector or a vertical electron detector. In some embodiments, the segmented electron detector 720 can be a cylinder with a circular, elliptical, or polygonal cross-section. Although Figure 7A A circular cross-section of a cylindrical segmented electron detector is shown, but other cross-sections and shapes may be used appropriately. In some embodiments, one or more segments of the segmented electron detector 720 may be along the principal optical axis (e.g., Figure 3A The main optical axis 304 is arranged in a 2D configuration, either radially, circumferentially, or azimuthally.

[0085] In some embodiments, one or more segments 720-1-720-5 can be configured to detect electrons based on emission energy, emission polar angle, or emission azimuth angle, etc.

[0086] Now for reference Figures 7B-7D It illustrates an exemplary configuration of a charged particle detection layer, such as an electron detector, consistent with embodiments of this disclosure. Figure 7B A non-segmented electron detection layer 721 is shown, for example, for use in a single-cell electron detector. The electron detection layer 721 may include elements disposed on electrostatic or magnetic components (e.g., Figure 5 A charged particle sensitive material layer on the inner surface of an electrostatic or magnetic element 520. The charged particle sensitive material can be configured to detect charged particles, including but not limited to ionizing radiation, electrons, X-rays, photons, etc. The electron detection layer 721 can be arranged around the principal optical axis (e.g., ...). Figure 3A The principal optical axis 304 is arranged linearly, radially, circumferentially, or azimuthally. The electron detector layer 721 can be configured to be substantially parallel to the principal optical axis or substantially perpendicular to the sample surface.

[0087] Figure 7C and 7D A segmented detection layer, for example, is shown, used in a segmented electronic detector. Although Figure 7CFour segments, 721-1C, 721-2C, 721-3C, and 721-4C, are shown; however, it should be understood that any number of segments can be used appropriately. Segments 721-1C–721-4C can be arranged linearly, radially, circumferentially, azimuthally, etc., around the principal optical axis. Figure 7D As shown, segments 721-1D, 721-2D, and 721-3D can be linearly arranged in a 3D configuration along the principal optical axis. In some embodiments, segments 721-1D, 721-2D, and 721-3D can be configured to detect BSEs with emission energies and emission polar angles within a certain range. In some embodiments, one or more segments 721-1D, 721-2D, and 721-3D can be substantially parallel to the principal optical axis or substantially perpendicular to the sample surface.

[0088] One of the ways to improve BSE collection efficiency in SEM includes configuring electrostatic or magnetic components (e.g., Figure 5 The electrostatic element 520 is used to detect BSEs with high emission energy and moderate emission pole angles, which might otherwise remain undetected. The electrostatic or magnetic element 520 may include one or more deflectors of the scanning deflection unit 309, one or more portions of the beam intensifier 620, a beam splitter (not shown), etc. It should be understood that electronic detectors (e.g., placed within the sample and lens) are used to detect BSEs with high emission energy and moderate emission pole angles, which might otherwise remain undetected. Figure 3A Any electrostatic or magnetic element between the lens-in-lens electronic detector 307 can be configured as a BSE detector.

[0089] Now for reference Figure 8 The diagram illustrates an exemplary plan view configuration of a charged particle detection device 800 consistent with embodiments of the present disclosure. The charged particle detection device 800 may include a substrate 801, a support structure 802, a charged particle detector 803, a conductive layer 804, deflection scanning electrodes 810_Y1, 810_Y2, 810_X1, and 810_X2, a readout circuit 815, scan signal lines 816, image signal lines 817, a power supply 820 supplying power to the readout circuit 815 via a connection 818, and a power bus 840.

[0090] In some embodiments, the charged particle detection device 800 may include a substrate 801 configured to receive a support structure 802. The substrate 801 may be made of an electrically insulating material, including but not limited to ceramics, dielectrics, glass, etc. In some embodiments, the substrate 801 may include a circuit board configured to receive the support structure 802 and support a circuit system.

[0091] The charged particle detection device 800 may include a support structure 802 configured as a BSE detector. In some embodiments, the support structure 802 may include, but is not limited to, electrostatic or magnetic elements of the charged particle beam device, such as deflectors, deflection scanning units, a portion of a beam intensifier, a beam splitter, etc. For example, a deflector (e.g., Figure 3B The deflector 309-1 or 309-2 can be configured to deflect the primary incident electron beam on the sample or to detect signal electrons with high emission energy and a moderate emission polar angle. It should be understood that although the support structure 802 is shown as having a circular cross-section, the support structure 802 may suitably have, but is not limited to, a hexagonal, rectangular, elliptical, or other cross-sections.

[0092] The charged particle detection device 800 may further include a charged particle detector 803 disposed on the inner surface of the support structure 802. In some embodiments, based on the charged particle detector 803 and its function, the disposed charging particle detector 803 on the support structure 802 may include, but is not limited to, deposition, coupling, fabrication, attachment, etc. The charged particle detector 803 may be circumferentially disposed on the inner surface of the support structure 802 to maximize the exposure to primary electrons or signal electrons.

[0093] In some embodiments, the charged particle detector 803 may include a diode, a scintillator, a radiation detector, a solid-state detector, a pin junction diode, or a pin detector, etc. The charged particle detector 803 may be configured to detect charged particles, including but not limited to ionizing radiation, electrons, X-rays, photons, etc. In some embodiments, the charged particle detector 803 may include a single-unit detector or a segmented detector. Although Figure 8 Four segments of the charged particle detector 803 are shown, but it should be understood that any number of segments may be used appropriately.

[0094] The charged particle detection device 800 may further include a conductive layer 804 configured to deflect primary electrons of a primary electron beam on a sample. The conductive layer 804 may be disposed on an inner surface of the charged particle detector 803. In some embodiments, the conductive layer 804 may be disposed on a portion of the inner surface of the charged particle detector 803. In some embodiments, the conductive layer 804 may be disposed on one or more segments of the charged particle detector 803 using techniques including, but not limited to, deposition, coupling, fabrication, and attachment. The conductive layer 804 may comprise a layer made of materials including, but not limited to, electrical conductors, metals, semiconductors, doped semiconductors, and electrodes. In some embodiments, the conductive layer 804 may comprise a thin film of a metal such as gold, platinum, palladium, silver, copper, or aluminum. In some embodiments, the support structure 802, the charged particle detector 803, or the conductive layer 804 may be positioned relative to the principal optical axis (not shown, e.g., ...). Figure 3AThe principal optical axis (304) is rotationally symmetric.

[0095] As an example, the charged particle detection device 800 may include: a support structure 802 supporting an electrostatic element such as deflector 309-1 or 309-2; a charged particle detector 803 configured to detect signal electrons including BSEs with high emission energy and moderate emission polar angle, and formed on the inner surface of deflector 309-1 or 309-2; or a conductive layer 804 disposed on the inner surface of charged particle detector 803. When used as both a deflector and detector, such a configuration can also enhance BSE collection efficiency, thereby improving imaging contrast and signal-to-noise ratio (SNR). The support structure 802 may be configured to provide mechanical support to system components and may not be configured for electrical connection.

[0096] The charged particle detection device 800 may also include control circuitry to control its operation as a deflector and detector. The control circuitry may include a power bus 840 configured to distribute and manage power to components such as isolated power supplies, generators, loads, and feeders. The control circuitry may also include one or more power supplies 820 configured to supply power to other system components, including the readout circuitry 815, the charged particle detector 803, and other components.

[0097] In some embodiments, a floating voltage may be applied to the deflection scanning electrodes 810_Y1, 810_Y2, 810_X1, or 810_X2. In some embodiments, the absolute values ​​of the floating voltages of at least two of the deflection scanning electrodes may be different. The applied floating voltage may be the operating voltage of the deflection scanning electrodes. Each of the deflection scanning electrodes 810Y1, 810Y2, 810X1, or 810X2 may be configured to apply a deflection voltage to the conductive layer 804.

[0098] In some embodiments, power supply 820 may be configured to provide power to components or functional blocks floating on scan deflection voltage or beam intensifier voltage. For example, in a deflector-detector assembly, the deflection voltage may be applied to the corresponding conductive layer 804 via one of a deflection scan electrode and a deflection scan driver (not shown), and in a beam intensifier-detector assembly, the intensifier voltage may be applied to the conductive layer 804 via a beam intensifier driver (not shown). For example, the intensifier voltage applied to the conductive layer 804 may include a static voltage. In some embodiments, a scan deflection voltage signal may be applied to the conductive layer 804 disposed on the inner surface of a segment of the charged particle detector 803 via deflection scan electrodes 810_Y1, 810_Y2, 810_X1 or 810_X2 and scan signal line 816. The scan deflection voltage signal may be configured to deflect the primary electron beam along the X-axis or Y-axis. In some embodiments, the scan deflection voltage signal may be applied as needed to deflect the primary electron beam in the +X, -X, +Y, or -Y direction.

[0099] The control circuitry of the charged particle detection device 800 may further include one or more readout circuits 815 configured to receive detection signals from segments of the charged particle detector 803 and process data associated with the detection signals. The associated data may include imaging data, tool parameters, detection parameters, etc. For example, the detection signal can be transmitted from a segment of the charged particle detector 803 to the readout circuit 815 using an image signal line 817. In some embodiments, the readout circuit 815 may also be configured to transmit information associated with the detection signals from the charged particle detector 803 to a processor of the charged particle detection device 800. The processor may include a computer, a server, a computer-implemented processor, etc. The information associated with the detection signals can communicate with the processor using fiber optic signals, data links, broadband transformers, or wireless ground, etc.

[0100] In some embodiments, the readout circuit 815 may be powered by a corresponding power supply 820 via connection 818. One or more power supplies 820 may be configured to receive power from the power bus 840 and supply power to circuit components, including but not limited to the readout circuit 815, the charged particle detector 803, etc.

[0101] Now for reference Figure 9This diagram shows a plan view of a charged particle detection device 900 consistent with an embodiment of the present invention. The charged particle detection device 900 may include a substrate 901, a support structure 902, a charged particle detector 903, a conductive layer 904, deflection scanning electrodes 910Y_1, 910_Y2, 910_X1, and 910_X2, a readout circuit 915, scan signal lines 916, image signal lines 917, and a power bus 940. It will be understood that other known components of the charged particle detection device 900 may be appropriately added, omitted, or modified. It should also be understood that the substrate 901, support structure 902, deflection scanning electrodes 910Y_1, 910_Y2, 910_X1 and 910_X2, and power bus 940 can be substantially similar to the substrate 801, support structure 802, deflection scanning electrodes 810Y_1, 810_Y2, 810_X1 and 810_X2, and power bus 840, and perform substantially similar functions.

[0102] In some embodiments, the charged particle detector 903 may include a scintillator. The charged particle detection device 900 may include a photodetector 930 configured to detect photons emitted by the scintillator along an optical path 935. In some embodiments, the charged particle detector 903 may include a secondary electron detector, a backscattered electron detector, an Everhart-Thornley detector, etc.

[0103] The charged particle detection device 900 may further include a conductive layer 904 configured to deflect primary electrons of a primary electron beam on a sample. The conductive layer 904 may be disposed on an inner surface of the charged particle detector 903. In some embodiments, the conductive layer 904 may be disposed on a portion of the inner surface of the charged particle detector 903. In some embodiments, the conductive layer 904 may be disposed on one or more segments of the charged particle detector 903 using techniques including, but not limited to, deposition, coupling, fabrication, and attachment. The conductive layer 904 may comprise a layer made of materials including, but not limited to, electrical conductors, metals, semiconductors, doped semiconductors, and electrodes. In some embodiments, the conductive layer 904 may comprise a thin film of a metal such as gold, platinum, palladium, silver, copper, or aluminum, which are conductive materials. In some embodiments, the support structure 902, the charged particle detector 903, or the conductive layer 904 may be positioned relative to the principal optical axis (not shown, e.g., ...). Figure 3A The principal optical axis (304) is rotationally symmetric.

[0104] As an example, the charged particle detection device 900 may include: a support structure 902 including an electrostatic element such as a deflector 309-1 or 309-2; a charged particle detector 903 configured to detect signal electrons including BSEs with high emission energy and moderate emission polar angles, and formed on the inner surface of the deflector 309-1 or 309-2; and a conductive layer 904 disposed on the inner surface of the charged particle detector 903. Signal electrons generated from a detection spot on a sample can be directed to the charged particle detector 903 (e.g., a scintillator). An electrical bias on the scintillator can attract signal electrons (including SEs and BSEs). The scintillator can be configured to convert the signal electrons into photons. The generated photons can be directed to a photodetector 930 along an optical path 935. When used as a deflector and detector, such a configuration can also enhance BSE collection efficiency, thereby enhancing imaging contrast and SNR.

[0105] The charged particle detection device 900 may further include control circuitry to control its operation as a deflector and detector. The control circuitry may include a power bus 940 configured to distribute and manage power to components such as readout circuitry 915. In some embodiments, the power bus 940 may be configured to supply power to components or functional blocks that float on a scan deflection voltage or beam intensifier voltage. For example, in a deflector-detector combination, a deflection voltage may be applied to a corresponding conductive layer 904 via one of a deflection scan electrode and a deflection scan driver (not shown), while in a beam intensifier-detector combination, an intensifier voltage may be applied to the conductive layer 904 via a beam intensifier driver (not shown). For example, the intensifier voltage applied to the conductive layer 904 may include a static voltage. In some embodiments, a scan deflection voltage signal can be applied to a conductive layer 904 disposed on the inner surface of a segment of the charged particle detector 903 by deflecting one of the scan electrodes 910Y_1, 910_Y2, 910_X1, and 910_X2 and the scan signal line 916. The scan deflection voltage signal can be configured to deflect the primary electron beam along the X-axis or Y-axis. In some embodiments, the scan deflection voltage signal can be applied as needed to deflect the primary electron beam in the +X, -X, +Y, or -Y direction.

[0106] The control circuitry of the charged particle detection device 900 may further include one or more readout circuits 915 configured to receive detection signals from segments of the charged particle detector 903 and process data associated with the detection signals. The associated data may include imaging data, tool parameters, detection parameters, etc. For example, the detection signals may be transmitted from the photodetector 930 to the readout circuits 915 using an image signal line 917. In some embodiments, the readout circuits 915 may also be configured to transmit information associated with the detection signals from the photodetector 930 to a processor of the charged particle detection device 900. The processor may include a computer, a server, a computer-implemented processor, etc. The information associated with the detection signals may communicate with the processor using fiber optic signals, data links, broadband transformers, or wireless ground, etc.

[0107] Now for reference Figure 10 It illustrates a representation consistent with embodiments of this disclosure. Figure 4 A process flow diagram of an exemplary method 1000 for forming an image of a sample using a charged particle beam device 40. For example, method 1000 may be derived from... Figure 1 The controller 50 of the EBI system 100 shown is executed. The controller 50 can be programmed to perform one or two steps of method 1000. For example, the controller 50 can activate the charged particle source, activate the optical system, and perform other functions.

[0108] In step 1010, a charged particle source can be activated to generate a beam of charged particles (e.g., Figure 2 The primary electron beam 204). The electron source can be controlled by a controller (e.g., Figure 1 The controller 50) is activated. For example, the electron source can be controlled to emit primary electrons along the principal optical axis (e.g., Figure 2 The electron beam is formed by the main optical axis 201. The electron source can be activated remotely, for example, by using software, an application, or a set of instructions for a processor used by a controller to power the electron source via control circuitry.

[0109] Objective lens assemblies (e.g., Figure 3A The objective lens assembly 310 focuses the primary electron beam onto the sample. In some embodiments, the scanning deflection unit (e.g., ...) focuses the primary electron beam onto the sample. Figure 3A The scanning deflection unit 309 can be configured to dynamically deflect the sample (e.g., Figure 3A The primary electron beam is applied to the surface of the sample (308). Dynamic deflection of the primary electron beam can cause the desired region or region of interest to be scanned (e.g., in raster scan mode) to generate SE and BSE for sample detection. The scanning deflection unit may include one or more deflectors (e.g., ...). Figure 3BThe deflector 309-1 or 309-2 is configured to deflect the primary electron beam 302 on the X-axis or Y-axis.

[0110] A focused primary electron beam can generate signal electrons when it interacts with a sample, including but not limited to secondary electrons, backscattered electrons, or Auger electrons.

[0111] In step 1020, a signal electron detector comprising an electron detection layer substantially parallel to the principal optical axis can be used to detect a subset of signal electrons with high emission energy and a moderate emission polar angle. The signal electron detector (e.g., Figure 4 The signal electronic detector 420) can be positioned such that the electronic detection layer (e.g., Figure 4 The electron detector layer 421 can be substantially perpendicular to the plane of the sample. In some embodiments, the signal electron detector can be positioned such that the electron detector layer can be substantially parallel to the principal optical axis. The electron detector layer may include or be disposed on the inner surface of the signal electron detector.

[0112] Signal electron detectors can be configured to detect a subset of signal electrons based on the characteristics of the signal electrons. These characteristics may include, but are not limited to, emission energy, emission polar angle, and emission azimuth angle. For example, a vertical signal electron detector can be configured to detect signal electrons with high emission energy (>50 eV) and a moderate emission polar angle in the range of 15° to 65° relative to the principal optical axis. In some embodiments, based on the number of signal electron detectors used, they can be positioned such that they are configured to detect signal electrons with a predefined range of emission polar angles. As an example, one signal electron detector can be configured to detect a subset of signal electrons with high emission energy and emission polar angles in the range of 15° to 40°, and another signal electron detector can be configured to detect a subset of signal electrons with high emission energy and emission polar angles in the range of 40° to 65°. It should be understood that the number, location, and type of signal electron detectors can be appropriately adjusted. It should also be understood that the emission polar angle ranges described herein are exemplary, and other ranges can be used.

[0113] The signal electronic detector can be located in the objective lens assembly and the lens internal electronic detector (e.g., Figure 4Between the in-lens electron detector 407. In some embodiments, a signal electron detector may be disposed between the sample and the in-lens electron detector. In some embodiments, more than one signal electron detector may be disposed between the sample and the in-lens electron detector. The signal electron detector may include a single-unit electron detector or a segmented electron detector. In a single-unit electron detector, the electron detection layer may include a non-segmented layer of charged particle sensitive material. In a segmented electron detector, the electron detection layer may include discontinuous layers of charged particle sensitive material, thereby forming segments of the segmented electron detector. The segments of the segmented electron detector may be arranged around the principal optical axis in a two-dimensional (2D) or three-dimensional (3D) arrangement. The segments of the segmented electron detector may be arranged linearly, radially, circumferentially, or azimuthally around the principal optical axis. The charged particle sensitive material may be sensitive to charged particles (such as ionizing radiation, electrons, X-rays, photons, etc.).

[0114] Now for reference Figure 11 It shows a process flow diagram of an exemplary method 1100 for configuring electrostatic elements of a charged particle beam device consistent with embodiments of the present disclosure.

[0115] Charged particle sources (e.g., Figure 2 The electron source 201 can be activated to generate a beam of charged particles (e.g., Figure 2 The primary electron beam 202). The electron source can be controlled by a controller (e.g., Figure 1 The controller 50) is activated. For example, the electron source can be controlled to emit primary electrons along the principal optical axis (e.g., Figure 2 The electron beam is formed along the main optical axis 204. The electron source can be activated remotely, for example, by using software, an application, or a set of instructions from a processor for a controller to power the electron source via control circuitry.

[0116] Use objective lens components (e.g., Figure 3A The objective lens assembly 310 can focus the primary electron beam onto the sample. In some embodiments, the scanning deflection unit (e.g., Figure 3A The scanning deflection unit 309 can be configured to dynamically deflect the sample (e.g., Figure 3A The primary electron beam is applied to the surface of the sample (308). Dynamic deflection of the primary electron beam allows the desired region or region of interest to be repeatedly scanned (e.g., in raster scan mode) to generate SE and BSE for sample detection. The scanning deflection unit may include one or more deflectors (e.g., ...). Figure 3B The deflector 309-1 or 309-2 is configured to deflect the primary electron beam 302 along the X-axis or Y-axis. The focused primary electron beam can generate signal electrons, including but not limited to secondary electrons, backscattered electrons, or Auger electrons, when it interacts with the sample.

[0117] The electrostatic component of the device can be configured to detect signal electrons with high emission energy and moderate emission polar angles, such as those from a sample (e.g., when interacting with incident electrons in a primary electron beam). Figure 5 BSE generated by the probe spot on sample 508. Electrostatic elements (e.g., Figure 5 The electrostatic element 520 may include a scanning deflection unit (e.g., Figure 3A and 3B The scanning deflection unit 309), beam intensifier, or beam splitter, etc. Electrostatic components can be arranged along the main optical axis within the sample and lens of the electron detector (e.g., Figure 5 Between the in-lens electron detector 507. In some embodiments, the electrostatic element, objective lens assembly, and in-lens electron detector may be aligned with and rotationally symmetrical to the principal optical axis.

[0118] Configuring an electrostatic element to detect a BSE may include performing steps 1110 and 1120, such as Figure 11 As shown. In step 1110, the charged particle detector (e.g., Figure 9 The charged particle detector 903 can be disposed on the inner surface of the electrostatic element. The charged particle detector can be configured to detect a first portion of multiple signal electrons generated when the primary electron beam interacts with the sample. The charged particle detector can be arranged such that the charged particle detection layer (e.g., Figure 5 The electron detector layer 521 can be placed substantially parallel to the main optical axis or substantially perpendicular to the sample.

[0119] Charged particle detectors can be circumferentially arranged on the inner surface of an electrostatic element to maximize exposure to primary electrons or signal electrons. Charged particle detectors can include diodes, scintillators, radiation detectors, solid-state detectors, pin junction diodes, or pin detectors, etc. Charged particle detectors can be configured to detect charged particles, including but not limited to ionizing radiation, electrons, X-rays, photons, etc. In some embodiments, charged particle detectors can include single-unit detectors or segmented detectors.

[0120] In step 1120, a conductive layer may be deposited on a portion of the inner surface of the charged particle detector (e.g., Figure 9 The conductive layer 904 can be configured to deflect primary electrons of the primary electron beam on the sample. The conductive layer can be deposited on a portion of the inner surface of the charged particle detector using techniques including, but not limited to, deposition, coupling, fabrication, and attachment. Electrostatic elements can be, in particular, beam intensifiers, beam deflectors, deflection scanning units, beam splitters, etc.

[0121] Various aspects of this disclosure are set forth in the following numbered clauses:

[0122] 1. An electron beam device, comprising:

[0123] An electron source, configured to generate a primary electron beam along the principal optical axis; and

[0124] A first electron detector having a first detection layer substantially parallel to the principal optical axis and configured to detect a first portion of a plurality of signal electrons generated by a detection spot formed on the sample by a primary electron beam.

[0125] 2. The apparatus according to Clause 1 further includes a second electronic detector configured to detect a second portion of the plurality of signal electrons, wherein a second detection layer of the second electronic detector is substantially perpendicular to the principal optical axis.

[0126] 3. The apparatus according to Clause 2 further includes an objective lens, the objective lens being configured as follows:

[0127] The primary electron beam is focused onto the sample;

[0128] The first portion of the plurality of signal electrons is focused onto the first detection layer of the first electron detector; and

[0129] The second portion of the plurality of signal electrons is focused onto the second detection layer of the second electron detector.

[0130] 4. The apparatus according to any one of clauses 2 and 3, wherein the first electronic detector is disposed between the sample and the second electronic detector and is disposed along the main optical axis.

[0131] 5. The apparatus according to any one of clauses 2-4, wherein the first electron detector and the second electron detector are configured to detect the plurality of signal electrons generated from the detector spot on the sample.

[0132] 6. The apparatus according to any one of Clauses 2-5, wherein the first electronic detector comprises a secondary electronic detector, a backscattered electronic detector, an electrostatic element, or a magnetic element.

[0133] 7. The apparatus according to Clause 6, wherein the electrostatic element comprises a beam deflector or beam enhancer, and wherein the magnetic element comprises a beam deflector or beam splitter.

[0134] 8. The apparatus according to any one of clauses 6 and 7, wherein the electrostatic element or the magnetic element includes an inner surface configured to facilitate the detection of the first portion of the plurality of signal electrons.

[0135] 9. The apparatus according to any one of Clauses 7-8, wherein the beam deflector includes an inner surface configured to facilitate the detection of the first portion of the plurality of signal electrons.

[0136] 10. The apparatus according to Clause 9, wherein the inner surface of the beam deflector comprises a continuous probe layer or a segmented probe layer.

[0137] 11. The apparatus according to Clause 10, wherein the segmented detector layer of the beam deflector comprises a plurality of detector segments arranged linearly, radially, circumferentially, or azimuthally along the principal optical axis.

[0138] 12. The apparatus according to any one of clauses 7-11, wherein the beam deflector comprises a multipole structure, and the inner surface of the poles of the multipole structure is configured to facilitate the detection of the first portion of the plurality of signal electrons.

[0139] 13. The apparatus according to any one of clauses 7-12, wherein the beam enhancer includes an inner surface configured to facilitate the detection of the first portion of the plurality of signal electrons.

[0140] 14. The apparatus of claim 13, wherein the inner surface of the beam intensifier comprises a continuous probe layer or a segmented probe layer.

[0141] 15. The apparatus of claim 14, wherein the segmented detector layer of the beam intensifier comprises a plurality of detector segments arranged linearly, radially, circumferentially, or azimuthally along the principal optical axis.

[0142] 16. The device according to any one of clauses 7-15, wherein the beam splitter includes an inner surface configured to facilitate the detection of the first portion of the plurality of signal electrons.

[0143] 17. The apparatus according to any one of Clauses 1-16, wherein the first electronic detector comprises a single electronic detector or a segmented electronic detector.

[0144] 18. The apparatus according to Clause 17, wherein the segmented electronic detector comprises a plurality of detector segments arranged linearly, radially, circumferentially, or azimuthally along the principal optical axis.

[0145] 19. The apparatus according to any one of clauses 1-18, wherein the first electron detector comprises a plurality of electrostatic elements configured to detect the plurality of signal electrons based on characteristics of a signal electron among the plurality of signal electrons.

[0146] 20. The apparatus according to Clause 19, wherein the characteristic of the signal electron includes emission energy, emission polar angle or emission azimuth angle of the signal electron relative to the principal optical axis.

[0147] 21. The apparatus according to Clause 20, wherein the first portion of the plurality of signal electrons includes backscattered electrons, and wherein the emission polar angle of the backscattered electrons is in the range of 15° to 65°.

[0148] 22. The apparatus according to any one of clauses 1-21, wherein the plurality of signal electrons comprises secondary electrons, backscattered electrons, or Auger electrons.

[0149] 23. An electron beam device, comprising:

[0150] An element comprising:

[0151] A first electron detector having a first detection layer disposed on the inner surface of the element and configured to detect a first portion of a plurality of signal electrons generated after the primary electron beam interacts with the sample; and

[0152] A conductive layer is deposited on a portion of the inner surface of the first electron detector and configured to deflect the primary electron beam on the sample.

[0153] 24. The apparatus according to Clause 23, wherein the first electronic detector comprises a diode, a scintillator, a radiation detector, a solid-state detector, or a pin junction diode.

[0154] 25. The apparatus according to any one of clauses 23 and 24, wherein the conductive layer comprises a metal film, a semiconductor film, or an electrode.

[0155] 26. The apparatus according to any one of clauses 23-25 ​​further includes a controller having a circuit system, the controller being configured to:

[0156] A voltage signal is applied to the conductive layer to deflect the primary electron beam; and

[0157] Receive detection signals generated by the first electronic detector in response to the detected plurality of signal electrons.

[0158] 27. The apparatus according to Clause 26, wherein the detection signal includes an electrical signal, an optical signal, a mechanical signal, or a combination thereof.

[0159] 28. The apparatus according to any one of clauses 26 and 27, wherein the applied voltage signal includes a scan deflection voltage configured to scan the primary electron beam along the X-axis, Y-axis, or both.

[0160] 29. The apparatus according to any one of claims 26-28, wherein the circuit system includes a readout circuit configured to transmit data associated with the detection signal to a processor of the electron beam apparatus.

[0161] 30. The apparatus according to any one of clauses 23-29, wherein the first electron detector comprises a plurality of segments of a segmented electron detector, and wherein the plurality of segments are arranged linearly, circumferentially, radially, or azimuthally along the principal optical axis of the primary electron beam.

[0162] 31. The apparatus according to claim 30, wherein the circuitry is further configured to apply the scan deflection voltage individually to the conductive layer of a segment of the segmented electronic detector and to receive the corresponding detection signal.

[0163] 32. The device according to any one of clauses 23-31 further includes a second electron detector having a second detection layer configured to detect a second portion of the plurality of signal electrons, wherein the second detection layer is substantially perpendicular to the main optical axis.

[0164] 33. The apparatus according to clause 32 further includes an objective lens, the objective lens being configured to:

[0165] Focusing the primary electron beam onto the sample; and

[0166] The first portion of the plurality of signal electrons is focused onto the first detection layer of the first electron detector; and

[0167] The second portion of the plurality of signal electrons is focused onto the second detection layer of the second electron detector.

[0168] 34. The apparatus according to any one of clauses 32 and 33, wherein the element is disposed between the sample and the second electronic detector.

[0169] 35. The apparatus according to any one of clauses 32-34, wherein the first electronic detector and the second electronic detector are configured to detect the plurality of signal electrons based on the characteristics of the signal electrons among the plurality of signal electrons.

[0170] 36. The apparatus according to Clause 35, wherein the characteristic of the signal electron includes emission energy, emission polar angle or emission azimuth angle relative to the principal optical axis.

[0171] 37. The apparatus according to Clause 36, wherein the first portion of the plurality of signal electrons includes backscattered electrons, and wherein the emission polar angle of the backscattered electrons is in the range of 15° to 65°.

[0172] 38. The apparatus according to any one of clauses 23-37, wherein said element comprises an electrostatic element or a magnetic element.

[0173] 39. The apparatus according to Clause 38, wherein the electrostatic element comprises a beam deflector or beam enhancer, and wherein the magnetic element comprises a beam deflector or beam splitter.

[0174] 40. The apparatus according to any one of clause 39, wherein the beam deflector includes an inner surface configured to facilitate the detection of the first portion of the plurality of signal electrons.

[0175] 41. The apparatus according to Clause 40, wherein the inner surface of the beam deflector comprises a continuous probe layer or a segmented probe layer.

[0176] 42. The apparatus according to Clause 41, wherein the segmented detector layer of the beam deflector comprises a plurality of detector segments arranged linearly, radially, circumferentially, or azimuthally along the principal optical axis.

[0177] 43. The apparatus according to any one of clauses 39-42, wherein the beam deflector comprises a multipole structure, and the inner surface of the poles of the multipole structure is configured to facilitate the detection of the first portion of the plurality of signal electrons.

[0178] 44. The device according to any one of clauses 39-43, wherein the beam enhancer includes an inner surface configured to facilitate the detection of the first portion of the plurality of signal electrons.

[0179] 45. The apparatus according to Clause 44, wherein the inner surface of the beam intensifier comprises a continuous probe layer or a segmented probe layer.

[0180] 46. ​​The apparatus of claim 45, wherein the segmented detector layer of the beam intensifier comprises a plurality of detector segments arranged linearly, radially, circumferentially, or azimuthally along the principal optical axis.

[0181] 47. The device according to any one of clauses 39-46, wherein the beam splitter includes an inner surface configured to facilitate the detection of the first portion of the plurality of signal electrons.

[0182] 48. The device according to any one of clauses 23-47, wherein the plurality of signal electrons comprises secondary electrons, backscattered electrons, or Auger electrons.

[0183] 49. An element of an electron beam apparatus, the element comprising:

[0184] An electron detector having a detection layer configured to be substantially parallel to the principal optical axis when mounted in the electron beam apparatus, and configured to detect a first portion of a plurality of signal electrons generated after the primary electron beam interacts with the sample; and

[0185] A conductive layer is disposed on a portion of the detector layer of the electron detector and is configured to deflect the primary electron beam incident on the sample.

[0186] 50. The element according to clause 49, wherein the electronic detector includes a diode, a scintillator, a radiation detector, a solid-state detector, or a pin junction diode.

[0187] 51. The element according to any one of clauses 49 and 50, wherein the conductive layer comprises a metal film, a doped semiconductor film, or an electrode.

[0188] 52. The element according to any one of clauses 49-51, which is electrically connected to the controller, wherein:

[0189] A voltage signal is applied from the controller to the conductive layer to deflect the primary electron beam; and

[0190] The charged particle detector generates a detection signal in response to the detection of the plurality of signal electrons.

[0191] 53. The element as described in Clause 52, wherein the detection signal includes an electrical signal, an optical signal, a mechanical signal, or a combination thereof.

[0192] 54. The element according to any one of clauses 52 and 53, wherein the applied voltage signal includes a scan deflection voltage configured to scan the primary electron beam along the X-axis, Y-axis, or both.

[0193] 55. The element according to any one of clauses 49-54, wherein the electron detector comprises a plurality of segments of a segmented electron detector, and wherein the plurality of segments are arranged linearly, circumferentially, radially, or azimuthally along the principal optical axis of the primary electron beam.

[0194] 56. The element according to any one of clauses 49-55, wherein the electronic detector is disposed on the inner surface of the element.

[0195] 57. The element according to any one of clauses 49-56 further includes a beam deflector, wherein the beam deflector includes an inner surface configured to facilitate the detection of the first portion of the plurality of signal electrons.

[0196] 58. The element according to Clause 57, wherein the inner surface of the beam deflector includes a continuous probe layer or a segmented probe layer.

[0197] 59. The element according to Clause 58, wherein the segmented detector layer of the beam deflector comprises a plurality of detector segments arranged linearly, radially, circumferentially, or azimuthally along the principal optical axis.

[0198] 60. The element according to any one of clauses 57-59, wherein the beam deflector comprises a multipole structure, and the inner surface of the poles of the multipole structure is configured to facilitate the detection of the first portion of the plurality of signal electrons.

[0199] 61. The element according to any one of clauses 49-60 further includes a beam enhancer, wherein the beam enhancer includes an inner surface configured to facilitate the detection of the first portion of the plurality of signal electrons.

[0200] 62. The element according to Clause 61, wherein the inner surface of the beam enhancer includes a continuous probe layer or a segmented probe layer.

[0201] 63. The element according to Clause 62, wherein the segmented detector layer of the beam intensifier comprises a plurality of detector segments arranged linearly, radially, circumferentially, or azimuthally along the principal optical axis.

[0202] 64. The element according to any one of clauses 49-63 further includes a beam splitter, wherein the beam splitter includes an inner surface configured to facilitate the detection of the first portion of the plurality of signal electrons.

[0203] 65. The element according to any one of clauses 49-64, wherein the plurality of signal electrons comprises secondary electrons, backscattered electrons, or Auger electrons.

[0204] 66. A method for observing a sample performed by an electron beam device, the method comprising:

[0205] After interacting with the primary electron beam, multiple signal electrons are generated from the probe spot on the sample; and

[0206] A first portion of the plurality of signal electrons is detected using a first electron detector, the first electron detector comprising a first detection layer substantially parallel to the main optical axis of the primary electron beam.

[0207] 67. The method according to Clause 66 further includes using a second electron detector to detect a second portion of the plurality of signal electrons, wherein a second detection layer of the second electron detector is substantially perpendicular to the principal optical axis.

[0208] 68. The method according to any one of clauses 66 and 67, wherein the first electronic detector comprises a secondary electronic detector, a backscattered electronic detector, an electrostatic element, or a magnetic element.

[0209] 69. The method according to any one of clauses 67-68, wherein the first electron detector is disposed between the sample and the second electron detector and is disposed along the main optical axis.

[0210] 70. The method according to any one of clauses 66-69 further includes detecting the plurality of signal electrons based on the characteristics of the signal electrons among the plurality of signal electrons.

[0211] 71. The method according to Clause 70, wherein the characteristic of the signal electron includes the emission energy of the signal electron, and the emission polar angle or emission azimuth angle relative to the principal optical axis.

[0212] 72. The method according to Clause 71, wherein the first portion of the plurality of signal electrons includes backscattered electrons, and wherein the emission polar angle of the backscattered electrons is in the range of 15° to 65°.

[0213] 73. The method according to any one of clauses 68-72 further includes configuring the inner surface of the electrostatic element to facilitate the detection of the first portion of the plurality of signal electrons.

[0214] 74. The method according to any one of clauses 68-73, wherein the electrostatic element comprises a beam deflector or a beam enhancer, and wherein the magnetic element comprises a beam deflector or a beam splitter.

[0215] 75. The method according to Clause 74 further includes configuring the inner surface of the beam deflector to facilitate the detection of the first portion of the plurality of signal electrons.

[0216] 76. The method according to Clause 75, wherein the inner surface of the beam deflector comprises a continuous probe layer or a segmented probe layer.

[0217] 77. The method according to Clause 76, wherein the segmented detector layer of the beam deflector comprises a plurality of detector segments arranged linearly, radially, circumferentially, or azimuthally along the principal optical axis.

[0218] 78. The method according to any one of clauses 74-77 further includes configuring the inner surface of the poles of the beam deflector to facilitate the detection of the first portion of the plurality of signal electrons.

[0219] 79. The method according to any one of clauses 74-78 further includes configuring the inner surface of the beam intensifier to facilitate the detection of the first portion of the plurality of signal electrons.

[0220] 80. The method according to any one of clauses 74-79 further includes configuring the inner surface of the beam splitter to facilitate the detection of the first portion of the plurality of signal electrons.

[0221] 81. A method of configuring elements of an electron beam apparatus, the method comprising:

[0222] A first electron detector having a first detection layer is disposed on the inner surface of the element. The first electron detector is configured to detect a first portion of a plurality of signal electrons generated after the interaction of a primary electron beam with the sample; and

[0223] A conductive layer is deposited on a portion of the inner surface of the electron detector, the conductive layer being configured to deflect the primary electron beam on the sample.

[0224] 82. The method according to Clause 81, wherein the electronic detector comprises a diode, a scintillator, a radiation detector, a solid-state detector, or a pin junction diode.

[0225] 83. The method according to any one of clauses 81 and 82 further includes providing a segmented electron detector comprising a plurality of segments, wherein the plurality of segments are arranged linearly, circumferentially, radially, or azimuthally along the principal optical axis of the primary electron beam.

[0226] 84. The method according to any one of clauses 81-83, wherein setting the first electronic detector includes forming the first electronic detector using techniques including microelectromechanical systems (MEMS) fabrication, semiconductor fabrication, or mechanical coupling.

[0227] 85. The method according to any one of clauses 81-84, wherein the deposition of the conductive layer is performed using techniques including adhesive bonding, gluing, welding, physical vapor deposition, or chemical vapor deposition.

[0228] 86. The method according to any one of clauses 81-85, wherein the conductive layer comprises a metal film, a semiconductor film, or an electrode.

[0229] 87. The method according to any one of clauses 81-86 further includes electrically connecting the element to a controller, the controller being configured to:

[0230] Applying a voltage signal to the conductive layer to deflect the primary electron beam; and

[0231] In response to the plurality of signal electrons detected by the first electronic detector, a detection signal is received from the first electronic detector.

[0232] 88. The method according to Clause 87, wherein applying the voltage signal comprises applying a scan deflection voltage signal configured to scan the primary electron beam along the X-axis, Y-axis, or both.

[0233] 89. The method according to any one of clauses 81-88, wherein the first portion of detecting the plurality of signal electrons is based on the characteristics of a signal electron among the plurality of signal electrons, said characteristics including emission energy, emission polar angle or emission azimuth angle relative to the principal optical axis.

[0234] 90. The method according to any one of clauses 81-89 further comprises arranging the first electron detector such that the first detection layer of the electron is positioned substantially parallel to the principal optical axis.

[0235] 91. The method according to any one of clauses 81-90, wherein said element comprises an electrostatic element or a magnetic element.

[0236] 92. The method according to Clause 91, wherein the electrostatic element comprises a beam deflector or a beam enhancer, and wherein the magnetic element comprises a beam deflector or a beam splitter.

[0237] 93. A non-transitory computer-readable medium storing a set of instructions executable by one or more processors of an electron beam apparatus to cause the electron beam apparatus to perform a method of observing a sample, the method comprising:

[0238] After interacting with the primary electron beam, multiple signal electrons are generated from the probe spot on the sample; and

[0239] A first portion of the plurality of signal electrons is detected using a first electron detector, the first electron detector comprising a first detection layer substantially parallel to the main optical axis of the primary electron beam.

[0240] 94. The non-transitory computer-readable medium according to clause 93, wherein the set of instructions executable by one or more processors of the electron beam apparatus causes the electron beam apparatus to: further perform the detection of a second portion of the plurality of signal electrons using a second electron detector, wherein a second detection layer of the second electron detector is substantially perpendicular to the principal optical axis.

[0241] 95. A non-transitory computer-readable medium according to any one of clauses 93 and 94, wherein the set of instructions executable by one or more processors of the electron beam apparatus causes the electron beam apparatus to further perform detection of the plurality of signal electrons based on characteristics of the signal electrons, the characteristics including the emission energy of the signal electrons, and the emission polar angle or emission azimuth angle relative to the principal optical axis.

[0242] 96. A charged particle beam device, comprising:

[0243] A charged particle source, configured to generate a primary charged particle beam along the principal optical axis; and

[0244] A first charged particle detector has a first detection layer that is substantially parallel to the main optical axis and is configured to detect a first portion of a plurality of signal charged particles generated from a detection spot formed on a sample by the primary charged particle beam.

[0245] 97. The apparatus according to Clause 96 further includes a second charged particle detector configured to detect a second portion of the plurality of signal charged particles, wherein a second detection layer of the second charged particle detector is substantially perpendicular to the main optical axis.

[0246] 98. The apparatus according to clause 97 further includes an objective lens, the objective lens being configured to:

[0247] Focus the primary charged particle beam onto the sample;

[0248] The first portion of the plurality of signal charged particles is focused onto the first detection layer of the first charged particle detector; and

[0249] The second portion of the plurality of signal charged particles is focused onto the second detection layer of the second charged particle detector.

[0250] 99. The apparatus according to any one of clauses 97 and 98, wherein the first charged particle detector is disposed between the sample and the second charged particle detector and is arranged along the main optical axis.

[0251] 100. The apparatus according to any one of clauses 97-99, wherein the first charged particle detector and the second charged particle detector are configured to detect the plurality of signal charged particles generated from the detector spot on the sample.

[0252] 101. The apparatus according to any one of Clauses 97-100, wherein the first charged particle detector comprises a secondary electron detector, a backscattered electron detector, an electrostatic element, or a magnetic element.

[0253] 102. The apparatus according to Clause 101, wherein the electrostatic element comprises a beam deflector or beam enhancer, and wherein the magnetic element comprises a beam deflector or beam splitter.

[0254] 103. The apparatus according to any one of clauses 101 and 102, wherein the electrostatic element or the magnetic element includes an inner surface of the first portion configured to facilitate the detection of the plurality of signal charged particles.

[0255] 104. The device according to any one of clauses 102-103, wherein the beam deflector includes an inner surface configured to facilitate the detection of the first portion of the plurality of signal charged particles.

[0256] 105. The device according to Clause 104, wherein the inner surface of the beam deflector comprises a continuous probe layer or a segmented probe layer.

[0257] 106. The device according to Clause 105, wherein the segmented detector layer of the beam deflector comprises a plurality of detector segments arranged linearly, radially, circumferentially, or azimuthally along the principal optical axis.

[0258] 107. The apparatus according to any one of clauses 102-106, wherein the beam deflector comprises a multipole structure, and the inner surface of the poles of the multipole structure is configured to facilitate the detection of the first portion of the plurality of signal charged particles.

[0259] 108. The apparatus according to any one of clauses 102-107, wherein the beam enhancer includes an inner surface configured to facilitate the detection of the first portion of the plurality of signal charged particles.

[0260] 109. The apparatus according to Clause 108, wherein the inner surface of the beam intensifier comprises a continuous probe layer or a segmented probe layer.

[0261] 110. The apparatus of claim 109, wherein the segmented detector layer of the beam intensifier comprises a plurality of detector segments arranged linearly, radially, circumferentially, or azimuthally along the principal optical axis.

[0262] 111. The apparatus according to any one of clauses 102-110, wherein the beam splitter includes an inner surface configured to facilitate the detection of the first portion of the plurality of signal charged particles.

[0263] 112. The apparatus according to any one of clauses 95-111, wherein the first electronic detector comprises a single electronic detector or a segmented electronic detector.

[0264] 113. The apparatus according to Clause 112, wherein the segmented electronic detector comprises a plurality of detector segments arranged linearly, radially, circumferentially, or azimuthally along the principal optical axis.

[0265] 114. The apparatus according to any one of claims 95-113, wherein the first charged particle detector comprises a plurality of electrostatic elements configured to detect the plurality of signal charged particles based on the characteristics of the signal charged particles among the plurality of signal charged particles.

[0266] 115. The apparatus according to Clause 114, wherein the characteristic of the signal charged particle includes the emission energy of the signal charged particle, and the emission polar angle or emission azimuth angle relative to the principal optical axis.

[0267] 116. The apparatus according to Clause 115, wherein the first portion of the plurality of signal charged particles comprises backscattered electrons, and wherein the emission polar angle of the backscattered electrons is in the range of 15° to 65°.

[0268] 117. The apparatus according to any one of clauses 95-116, wherein the plurality of signal charged particles comprise secondary electrons, backscattered electrons, or Auger electrons.

[0269] Non-transient computer-readable media may be provided, the storage of which is used for controller (e.g., Figure 1 The processor of the controller 50 executes instructions to perform image detection, image acquisition, activation of charged particle sources, adjustment of the electrical excitation of the stigmator, adjustment of the landing energy of electrons, adjustment of objective lens excitation, adjustment of the position and orientation of the secondary electron detector, stage motion control, beam splitter excitation, application of scanning deflection voltage to the beam deflector, receiving and processing data associated with signal information from the electron detector, configuring electrostatic components, and detecting signal electrons. Common forms of non-transitory media include, for example, floppy disks, flexible disks, hard disks, solid-state drives, magnetic tape or any other magnetic data storage media, optical disc read-only memory (CD-ROM), any other optical data storage media, any physical media with a perforated pattern, random access memory (RAM), programmable read-only memory (PROM) and erasable programmable read-only memory (EPROM), flash-EPROM or any other flash memory, non-volatile random access memory (NVRAM), cache, registers, any other memory chip or cartridge, and their networked versions.

[0270] It should be understood that the embodiments of this disclosure are not limited to the exact constructions described above and illustrated in the accompanying drawings, and various modifications and changes can be made without departing from the scope of this disclosure. This disclosure has been described in conjunction with various embodiments, and other embodiments of the invention will be apparent to those skilled in the art in light of the specification and practice of the invention disclosed herein. The specification and examples are intended to be considered merely exemplary, and the true scope and spirit of the invention are indicated by the following appended claims.

[0271] The above description is intended to illustrate and not limit. Therefore, it will be apparent to those skilled in the art that modifications as described can be made without departing from the scope of the claims set forth below.

Claims

1. An electron beam device, comprising: An electron source, configured to generate a primary electron beam along the principal optical axis; as well as Components, including: A first electron detector having a first detection layer substantially parallel to the principal optical axis and disposed on the inner surface of the element, and the first detection layer being configured to detect a first portion of a plurality of signal electrons generated from a detection spot formed by the primary electron beam on the sample; as well as A conductive layer is deposited on a portion of the inner surface of the first electron detector, and the conductive layer is configured to deflect the primary electron beam on the sample.

2. The apparatus of claim 1, further comprising a second electron detector configured to detect a second portion of the plurality of signal electrons, wherein a second detection layer of the second electron detector is substantially perpendicular to the principal optical axis.

3. The apparatus of claim 2, further comprising an objective lens, the objective lens being configured as follows: The primary electron beam is focused onto the sample; The first portion of the plurality of signal electrons is focused onto the first detection layer of the first electron detector; as well as The second portion of the plurality of signal electrons is focused onto the second detection layer of the second electron detector.

4. The apparatus of claim 2, wherein the first electronic detector is disposed between the sample and the second electronic detector and is arranged along the main optical axis.

5. The apparatus of claim 2, wherein the first electron detector and the second electron detector are configured to detect the plurality of signal electrons generated from the detector spot on the sample.

6. The apparatus of claim 2, wherein the first electronic detector comprises a secondary electronic detector, a backscattered electronic detector, an electrostatic element, or a magnetic element.

7. The apparatus of claim 6, wherein the element comprises a beam deflector and a beam enhancer.

8. The apparatus of claim 6, wherein the conductive layer comprises a metal film, a semiconductor film, or an electrode.

9. The apparatus of claim 1, further comprising a controller having a circuit system, the controller being configured to: A voltage signal is applied to the conductive layer to deflect the primary electron beam; and Receive detection signals generated by the first detection layer in response to the detected plurality of signal electrons.

10. The apparatus of claim 9, wherein the first detection layer comprises a continuous detection layer or a segmented detection layer.

11. The apparatus of claim 10, wherein the segmented detection layer comprises a plurality of detector segments arranged linearly, radially, circumferentially, or azimuthally along the principal optical axis.

12. The apparatus of claim 7, wherein the beam deflector comprises a multipole structure, and the inner surfaces of the poles of the multipole structure are configured to facilitate the detection of the first portion of the plurality of signal electrons.

13. The apparatus of claim 9, wherein the voltage signal includes a scan deflection voltage configured to scan the primary electron beam along the X-axis, Y-axis, or both.

14. The apparatus of claim 13, wherein the first detection layer comprises a segmented detection layer, and the circuit system is further configured to apply the scan deflection voltage individually to the conductive layer of the segmented detection layer and receive a corresponding detection signal.

15. The apparatus of claim 14, wherein the segmented detection layer comprises a plurality of detector segments arranged linearly, radially, circumferentially, or azimuthally along the principal optical axis.

16. The apparatus of claim 6, wherein the magnetic element includes a beam splitter, the beam splitter including an inner surface configured to facilitate the detection of the first portion of the plurality of signal electrons.

17. The apparatus of claim 1, wherein the first electronic detector comprises a single electronic detector or a segmented electronic detector.

18. The apparatus of claim 17, wherein the segmented electronic detector comprises a plurality of detector segments arranged linearly, radially, circumferentially, or azimuthally along the principal optical axis.

19. The apparatus of claim 1, wherein the first electron detector comprises a plurality of electrostatic elements configured to detect the plurality of signal electrons based on characteristics of a signal electron among the plurality of signal electrons.

20. A method for observing a sample performed by an electron beam device, the method comprising: The primary electron beam acting on the sample is deflected by the conductive layer of the element, wherein the first detector layer is substantially parallel to the main optical axis of the primary electron beam and is disposed on the inner surface of the element, and the conductive layer is deposited on a portion of the inner surface of the first detector layer. After interacting with the primary electron beam, multiple signal electrons are generated from the probe spot on the sample; as well as The first portion of the plurality of signal electrons is detected by the first detection layer of the element.

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