Pressure sensor and method of manufacturing the same, display device

Abstract

The embodiment of the present application provides a pressure sensor, a manufacturing method thereof and a display device. In the pressure sensor provided by the embodiment of the present application, by arranging the strain structure with the first through hole, the sacrificial structure can be removed through the unfilled first through hole in the manufacturing process of the pressure sensor, so that the strain structure and the first electrode enclose at least one chamber, the strain structure can support the second electrode, the forming rate of the second electrode can be improved, and the structural strength of the second electrode can be ensured, so that the manufacturing difficulty of the pressure sensor can be reduced. Meanwhile, the pressure sensor is made of a glass substrate, and compared with a silicon substrate, the manufacturing cost of the pressure sensor can be greatly reduced.

Description

Technical Field

[0001] This application relates to the field of sensor technology, and more specifically, to a pressure sensor, a method for manufacturing the same, and a display device thereof. Background Technology

[0002] Currently, pressure sensors, as an important type of sensor, are increasingly being used in consumer electronics products such as mobile phones and tablets.

[0003] However, most existing pressure sensors are made on silicon substrates, which are complex in structure and manufacturing process, making them difficult to manufacture and resulting in high manufacturing costs. Summary of the Invention

[0004] This application addresses the shortcomings of existing methods by proposing a pressure sensor, its manufacturing method, and a display device, thereby solving the technical problem of the difficulty in manufacturing pressure sensors in the prior art.

[0005] In a first aspect, embodiments of this application provide a pressure sensor, comprising:

[0006] Glass substrate;

[0007] The first electrode is disposed on one side of the glass substrate;

[0008] A strain structure is disposed on the side of the first electrode away from the glass substrate. The strain structure and the first electrode enclose each other to form at least one cavity. The strain structure has a first through hole.

[0009] The second electrode is located on the side of the strain structure away from the glass substrate.

[0010] Secondly, embodiments of this application provide a display device, including: the pressure sensor provided in the first aspect above.

[0011] Thirdly, embodiments of this application provide a method for manufacturing a pressure sensor, comprising:

[0012] A first electrode is formed on one side of the glass substrate;

[0013] A sacrificial structure is formed on the side of the first electrode away from the glass substrate;

[0014] Based on deposition and patterning processes, an initial structure with through holes is formed on the side of the sacrificial structure away from the glass substrate.

[0015] The sacrificial structure is removed by a through-hole, so that at least one chamber is formed between the first electrode and the initial structure;

[0016] The via is filled by a deposition process to form a strain structure with a first via and a second electrode located on the side of the strain structure away from the glass substrate.

[0017] The beneficial technical effects of the technical solutions provided in this application include:

[0018] In the pressure sensor provided in this application embodiment, by setting a strain structure with a first through hole, it is easy to remove the sacrificial structure through the unfilled first through hole during the manufacturing process of the pressure sensor, so that the strain structure and the first electrode enclose at least one chamber. The strain structure can play the role of supporting the second electrode, which can improve the formation rate of the second electrode and ensure the structural strength of the second electrode, thereby reducing the manufacturing difficulty of the pressure sensor.

[0019] Moreover, in this embodiment, the pressure sensor is made based on a glass substrate, which can greatly reduce the manufacturing cost of the pressure sensor compared to a silicon substrate.

[0020] Additional aspects and advantages of this application will be set forth in part in the description which follows, and will become apparent from the description or may be learned by practice of this application. Attached Figure Description

[0021] The above and / or additional aspects and advantages of this application will become apparent and readily understood from the following description of the embodiments taken in conjunction with the accompanying drawings, wherein:

[0022] Figure 1 This is a schematic diagram of the structure of the first type of pressure sensor provided in the embodiments of this application;

[0023] Figure 2 Provided for the embodiments of this application Figure 1 A top view of the strain structure in the first type of pressure sensor shown;

[0024] Figure 3 This is a schematic diagram of the structure of a second type of pressure sensor provided in an embodiment of this application;

[0025] Figure 4 This is a schematic diagram of the structure of the third type of pressure sensor provided in the embodiments of this application;

[0026] Figure 5 Provided for the embodiments of this application Figure 4 A top view of the strain structure in the third type of pressure sensor shown;

[0027] Figure 6 This is a schematic diagram of the structure of the fourth type of pressure sensor provided in the embodiments of this application;

[0028] Figure 7 Provided for the embodiments of this application Figure 6A top view of the strain structure in the fourth type of pressure sensor is shown.

[0029] Figure 8 This is a schematic diagram of the structure of the fifth type of pressure sensor provided in the embodiments of this application;

[0030] Figure 9 Provided for the embodiments of this application Figure 8 A top view of the strain structure in the fifth type of pressure sensor is shown.

[0031] Figure 10 A schematic flowchart illustrating a method for manufacturing a pressure sensor according to an embodiment of this application;

[0032] Figure 11a A schematic diagram of the structure after the first sub-sacrificial structure is formed in the method for manufacturing the first pressure sensor provided in the embodiments of this application;

[0033] Figure 11b A schematic diagram of the structure after the sacrificial structure is formed in the manufacturing method of the first pressure sensor provided in this application embodiment;

[0034] Figure 11c A schematic diagram of the structure after the support layer is formed in the manufacturing method of the first pressure sensor provided in this application embodiment;

[0035] Figure 11d A schematic diagram of the structure after the formation of the second metal layer in the manufacturing method of the first pressure sensor provided in this application embodiment;

[0036] Figure 11e A schematic diagram of the structure after patterning the support layer and the second metal layer in the method for manufacturing the first pressure sensor provided in the embodiments of this application;

[0037] Figure 11f A schematic diagram of the structure after removing the sacrificial structure in the manufacturing method of the first pressure sensor provided in the embodiments of this application;

[0038] Figure 11g A schematic diagram of the structure after forming the first terminal and the second terminal in the method for manufacturing the first pressure sensor provided in the embodiments of this application;

[0039] Figure 12a The second pressure sensor manufacturing method provided in the embodiments of this application is based on Figure 11c A schematic diagram of the structure after the patterned support layer is shown.

[0040] Figure 12b A schematic diagram of the structure after removing the sacrificial structure in the second pressure sensor manufacturing method provided in this application embodiment;

[0041] Figure 12c A schematic diagram of the structure after the second protective layer is formed in the manufacturing method of the second pressure sensor provided in the embodiments of this application;

[0042] Figure 12d A schematic diagram of the structure after the third protective layer is formed in the second pressure sensor manufacturing method provided in this application embodiment;

[0043] Figure 13a The third method for manufacturing a pressure sensor provided in this application embodiment is based on... Figure 11b The diagram shows the structure after the support layer and the second metal layer are formed.

[0044] Figure 13b A schematic diagram of the structure after forming a through hole in the third pressure sensor manufacturing method provided in this application embodiment;

[0045] Figure 13c A schematic diagram of the structure after forming the second protective layer and the second terminal in the third pressure sensor manufacturing method provided in this application embodiment;

[0046] Figure 14a The fourth pressure sensor manufacturing method provided in this application embodiment is based on Figure 13a A schematic diagram of the structure after the through hole is formed;

[0047] Figure 14b A schematic diagram of the structure after forming the second protective layer and the second terminal in the fourth pressure sensor manufacturing method provided in this application embodiment;

[0048] Figure 15a A schematic diagram of the structure after the sacrificial structure is formed in the fifth method for manufacturing a pressure sensor provided in this application embodiment;

[0049] Figure 15b A schematic diagram of the structure after the formation of the second metal layer in the fifth pressure sensor manufacturing method provided in this application embodiment;

[0050] Figure 15c A schematic diagram of the structure after patterning the support layer and the second metal layer in the fifth pressure sensor manufacturing method provided in this application embodiment;

[0051] Figure 15d A schematic diagram of the structure after removing the sacrificial structure in the manufacturing method of the first pressure sensor provided in the embodiments of this application;

[0052] Figure 15e This is a schematic diagram of the structure after forming the second protective layer and the second terminal in the manufacturing method of the first pressure sensor provided in the embodiments of this application.

[0053] Explanation of reference numerals in the attached figures:

[0054] 100-glass substrate;

[0055] 10 - First electrode;

[0056] 20 - Strain structure; 21 - First sub-section of strain structure 20; 22 - Second sub-section of strain structure 20; 23 - First through hole; 231 - First hole segment; 232 - Second hole segment;

[0057] 30 - Second electrode; 31 - Second through hole;

[0058] 40 - Chamber; 41 - First sub-chamber; 42 - Second sub-chamber;

[0059] 50 - First protective layer;

[0060] 61 - First terminal; 62 - Second terminal;

[0061] 70 - Second protective layer;

[0062] 80 - Sacrifice structure; 801 - First sub-sacrifice structure; 81 - First part of sacrifice structure 80; 82 - Second part of sacrifice structure 80; 83 - Third part of sacrifice structure 80;

[0063] 90 - Third protective layer;

[0064] 101-First metal layer; 102-First dielectric layer; 103-Support layer; 1031-Initial support structure; 104-Second metal layer. Detailed Implementation

[0065] The embodiments of this application are described below with reference to the accompanying drawings. It should be understood that the embodiments described below with reference to the accompanying drawings are exemplary descriptions for explaining the technical solutions of the embodiments of this application, and do not constitute a limitation on the technical solutions of the embodiments of this application.

[0066] Those skilled in the art will understand that, unless specifically stated otherwise, the singular forms “a,” “an,” “the,” and “the” used herein may also include the plural forms. It should be further understood that the word “comprising” as used in this application's specification means the presence of the stated features, integers, steps, and / or operations, but does not exclude implementation as supported by this art, other features, information, data, steps, operations, and / or combinations thereof. The term “and / or” as used herein refers to at least one of the items defined by the term; for example, “A and / or B” can be implemented as “A,” or as “B,” or as “A and B.”

[0067] To make the objectives, technical solutions, and advantages of this application clearer, the embodiments of this application will be described in further detail below with reference to the accompanying drawings.

[0068] First, the relevant technologies involved in this application will be explained:

[0069] Most existing pressure sensors are capacitive pressure sensors, which include two oppositely arranged electrodes and an elastic dielectric layer between the two electrodes. When the ambient pressure changes, one electrode deforms, thereby changing the capacitance value of the capacitive pressure sensor. By using an external circuit to convert the change in capacitance value into a voltage signal, the change in ambient pressure can be detected.

[0070] For pressure sensors used in consumer electronic devices such as mobile phones and tablets, the size of the pressure sensors is usually small, so they are mostly made on silicon substrates. However, this method has problems such as complex structure, complex manufacturing process, and high manufacturing difficulty, as well as poor integration with existing display panel manufacturing processes.

[0071] Furthermore, in order to improve the sensitivity of the pressure sensor, the elastic dielectric layer between the two electrodes is removed in related technologies. This makes the upper electrode prone to breakage when subjected to pressure. Moreover, due to the lack of support, the formation rate of the upper electrode is low during the fabrication of the pressure sensor, resulting in a low yield of the pressure sensor.

[0072] The pressure sensor, its manufacturing method, and display device provided in this application are intended to address the aforementioned technical problems of the prior art.

[0073] The technical solution of this application and how it solves the above-mentioned technical problems are described in detail below with specific embodiments. It should be noted that the following embodiments can be referenced, borrowed, or combined with each other, and the same terms, similar features, and similar implementation steps in different embodiments will not be described again.

[0074] This application provides a pressure sensor, the structural schematic diagram of which is shown below. Figure 1 As shown, it includes: a first electrode 10, a strain structure 20, and a second electrode 30.

[0075] In this embodiment, the first electrode 10 is disposed on one side of the glass substrate 100; the strain structure 20 is disposed on the side of the first electrode 10 away from the glass substrate 100, and the strain structure 20 and the first electrode 10 enclose each other to form at least one chamber 40, and the strain structure 20 has a first through hole 23; the second electrode 30 is disposed on the side of the strain structure 20 away from the glass substrate 100.

[0076] In the pressure sensor provided in this application embodiment, by providing a strain structure 20 with a first through hole, it is easy to remove the sacrificial structure through the unfilled first through hole during the manufacturing process of the pressure sensor, so that the strain structure 20 and the first electrode 10 enclose to form at least one chamber. The strain structure 20 can play the role of supporting the second electrode 30, which can improve the formation rate of the second electrode 30 and ensure the structural strength of the second electrode 30, thereby reducing the manufacturing difficulty of the pressure sensor.

[0077] Moreover, in this embodiment, the pressure sensor is made based on a glass substrate 100, which can greatly reduce the manufacturing cost of the pressure sensor compared to a silicon substrate.

[0078] In the embodiments of this application, such as Figure 1 and Figure 2 As shown, the strain structure 20 is located on the side of the first electrode 10 away from the glass substrate 100. The strain structure 20 and the first electrode 10 enclose a cavity 40. The second electrode 30 is disposed on the side of the strain structure 20 away from the glass substrate 100. When the second electrode 30 is subjected to external pressure, the second electrode 30 will be formed, and the distance between the second electrode 30 and the first electrode 10 will change, thereby causing the capacitance value of the pressure sensor to change.

[0079] In this embodiment, the strain structure 20 supports the second electrode 30, thereby enhancing its structural strength. Under pressure, this reduces the likelihood of the second electrode 30 breaking, ensuring the lifespan of the pressure sensor. Furthermore, during the manufacturing process of the pressure sensor, the strain structure 20 also supports the second electrode 30, ensuring its formation rate and thus improving the overall yield of the pressure sensor.

[0080] In the embodiments of this application, such as Figure 1 As shown, the strain structure 20 and the first electrode 10 enclose a cavity 40, which can reduce the deformation resistance of the second electrode 30 when the second electrode 30 is subjected to pressure, thereby ensuring the sensitivity of the pressure sensor.

[0081] In this embodiment, a pressure sensor is fabricated on one side of a glass substrate 100 based on deposition and patterning processes. Compared with silicon-based pressure sensors of related technologies, this reduces the manufacturing cost of the pressure sensor. Moreover, it eliminates the need for epitaxial processes, further reducing the manufacturing cost of the pressure sensor. Furthermore, both deposition and patterning processes are common steps involved in the manufacturing processes of existing display panels, thus enabling the production of display panels with integrated pressure sensors using existing display panel production lines, thereby reducing the manufacturing cost of display panels.

[0082] In this embodiment of the application, optionally, both the first electrode 10 and the second electrode 30 include metallic materials, thereby enabling the first electrode 10 and the second electrode 30 to be formed by deposition and patterning processes, and ensuring that the first electrode 10 and the second electrode 30 have good conductivity.

[0083] Optionally, the strain structure 20 is made of silicon nitride and is a low-stress structure, so that the strain structure 20 has a certain deformation capacity and reduces the probability of the strain structure 20 breaking or collapsing. Optionally, during the fabrication of the strain structure 20 by the deposition process, the density of the formed deposition structure is appropriately reduced by decreasing the deposition density of silicon nitride, so as to obtain a low-stress strain structure 20.

[0084] In this embodiment, along the direction perpendicular to the glass substrate 100, the thickness of the first electrode 10 and the second electrode 30 is not less than 50 nanometers and not more than 100 nanometers, the maximum thickness of the strain structure 20 is not less than 320 nanometers and not more than 480 nanometers, optionally, the maximum thickness of the strain structure 20 is 400 nanometers, and the maximum thickness of the cavity 40 is not less than 720 nanometers and not more than 1080 nanometers, optionally, the maximum thickness of the cavity 40 is 900 nanometers.

[0085] In one embodiment of this application, the second electrode 30 has a second through hole 31, which communicates with the first through hole 23, and the first through hole 23 communicates with the chamber 40; both the first through hole 23 and the second through hole 31 extend in a direction perpendicular to the glass substrate 100.

[0086] In this embodiment of the application, combined with Figure 1 and Figure 2 It is known that the second electrode 30 includes a second through hole 31 that communicates with the first through hole 23 in the strain structure 20. Both the first through hole 23 and the second through hole 31 extend in a direction perpendicular to the glass substrate 100, and the central axes of the first through hole 23 and the second through hole 31 are collinear.

[0087] In this embodiment, by providing a second electrode 30 with a second through hole 31, during the fabrication of the pressure sensor, the sacrificial structure is removed through the through hole formed by the connection of the first through hole 23 and the second through hole 31 to form a chamber 40. This allows for the fabrication of a film layer for forming the strain structure 20 and a film material for forming the second electrode 30, followed by uniform etching to form the through hole, thereby improving the fabrication efficiency of the pressure sensor.

[0088] Optionally, the diameter of the first through-hole 23 is not less than 0.3 micrometers and not more than 3 micrometers to ensure the structural strength of the strain structure 20 and the removal rate of the sacrificial structure. Optionally, the diameter of the second through-hole 31 is not less than 0.3 micrometers and not more than 3 micrometers.

[0089] In one embodiment of this application, the strain structure 20 includes a first sub-part 21 and a second sub-part 22 connected together; the first sub-part 21 is disposed on the side of the first electrode 10 away from the glass substrate 100, the first sub-part 21 and the first electrode 10 enclose to form a first sub-cavity 41 of the cavity 40, and the second sub-part 22 and the first electrode 10 enclose to form a second sub-cavity 42 of the cavity 40.

[0090] In the embodiments of this application, such as Figure 1 and Figure 2 As shown, the strain structure 20 includes a first sub-part 21. Part of the first sub-part 21 is directly connected to the first protective layer 50 disposed on one side of the first electrode 10, which can directly support the second sub-part 22. When the second electrode 30 is subjected to pressure, the second sub-part 22 will deform first, thereby causing the first sub-part 21 to form. As the first sub-part 21 is compressed, the side of the first sub-part 21 close to the first protective layer 50 will be completely in contact with the first protective layer 50, thereby increasing the contact area between the strain structure 20 and the first protective layer 50, thereby reducing the probability of damage to the strain structure 20.

[0091] In the embodiments of this application, such as Figure 1 As shown, the first sub-part 21 and the first electrode 10 enclose a first sub-chamber 41 of the cavity 40, and the second sub-part 22 and the first electrode 10 enclose a second sub-chamber 42 of the cavity 40. The first sub-chamber 41 and the second sub-chamber 42 are connected. By setting the first sub-chamber 41, the deformability of the strain structure 20 can be increased and the pressure threshold at which the strain structure 20 is formed can be reduced, thereby improving the sensitivity of the pressure sensor and improving the performance of the pressure sensor.

[0092] In one embodiment of this application, the orthographic projection of the first sub-part 21 onto the glass substrate 100 surrounds the orthographic projection of the second sub-part 22 onto the glass substrate 100; at least one of the first sub-part 21 and the second sub-part 22 has a plurality of first through holes 23.

[0093] In the embodiments of this application, such as Figure 2 As shown, the orthographic projection of the first sub-part 21 onto the glass substrate 100 surrounds the orthographic projection of the second sub-part 22 onto the glass substrate 100, that is, the first sub-part 21 is arranged around the second sub-part 22.

[0094] In the embodiments of this application, such as Figure 2 , Figure 5 , Figure 7 as well as Figure 9 As shown, the first sub-parts 21 are all arranged around the second sub-parts 22, and at least one of the first sub-parts 21 and the second sub-parts 22 has a plurality of first through holes 23.

[0095] Optionally, such as Figure 2 As shown, the second sub-part 22 has multiple first through holes 23, which can improve the efficiency of removing the sacrificial structure and ensure the removal effect of the sacrificial structure during the manufacturing process of the pressure sensor.

[0096] Optionally, such as Figure 5 As shown, the first sub-part 21 has multiple first through holes 23. During the manufacturing process of the pressure sensor, while improving the efficiency of removing the sacrificial structure and ensuring the removal effect of the sacrificial structure, it is possible to avoid opening a second through hole 31 in the second electrode 30 that communicates with the first through hole 23, thereby ensuring the integrity and flatness of the second electrode 30 and ensuring the sensitivity of the pressure sensor.

[0097] Optionally, such as Figure 7 As shown, both the first sub-part 21 and the second sub-part 22 are provided with multiple first through holes 23, which can further improve the efficiency of removing the sacrificial structure and ensure the removal effect of the sacrificial structure during the manufacturing process of the pressure sensor.

[0098] Optionally, the first through hole 23 has a cross-sectional shape parallel to the glass substrate 100 that is at least one of a circle, an ellipse, a rounded square, a strip, and a rounded rectangle.

[0099] In one embodiment of this application, the first through hole 23 includes a first hole segment 231 and a second hole segment 232; the first hole segment 231 extends in a direction perpendicular to the glass substrate 100, and the second hole segment 232 extends in a direction parallel to the glass substrate 100.

[0100] In the embodiments of this application, such as Figure 9 As shown, the first sub-part 21 has multiple first through holes 23. During the manufacturing process of the pressure sensor, while improving the efficiency of removing the sacrificial structure and ensuring the removal effect of the sacrificial structure, it is possible to avoid opening a second through hole 31 in the second electrode 30 that communicates with the first through hole 23, thereby ensuring the integrity and flatness of the second electrode 30 and ensuring the sensitivity of the pressure sensor.

[0101] In the embodiments of this application, such as Figure 9 As shown, the first via 23 includes a first via segment 231 extending perpendicular to the glass substrate 100 and a second via segment 232 extending parallel to the glass substrate 100. During the etching of the sacrificial structure, the etching gas passes through the first via segment 231 and the second via segment 232 in sequence and then contacts the sacrificial structure, enabling etching of the sacrificial structure from the bottom side, thereby further improving the efficiency of sacrificial structure removal and ensuring the removal effect of the sacrificial structure.

[0102] Optionally, such as Figure 9 As shown, the cross-sectional shape of the first hole segment 231 and the second hole segment 232 is elongated. Figure 9 As shown, the second hole segment 232 is represented by a dashed line because it is blocked by the first sub-part 21.

[0103] In one embodiment of this application, the strain structure 20 includes a medium structure filled within the first through-hole 23.

[0104] In this embodiment, to ensure the sealing of the cavity 40 and the structural strength of the strain structure 20, the first through hole 23 needs to be filled with a medium after removing the sacrificial structure during the fabrication of the pressure sensor. Optionally, as... Figure 1 , Figure 3 , Figure 4 , Figure 6 and Figure 8 As shown, part of the second protective layer 70 is filled in the first through hole 23 to form a medium structure, which plays a role in strengthening the structural strength of the strain structure 20.

[0105] Optionally, such as Figure 1 As shown, a portion of the second protective layer 70 is filled within the first through hole 23 and the second through hole 31.

[0106] Optionally, such as Figure 3 The second protective layer 70 is partially filled into the first through hole 23.

[0107] Optionally, such as Figure 4 As shown, the first through hole 23 is filled with the same material as the strain structure 20, and the second through hole 31 is filled with the same material as the second electrode 30.

[0108] Optionally, such as Figure 6 As shown, a portion of the second protective layer 70 fills the first through hole 23 located in the second sub-part 22 and the second through hole 31 communicating with the first through hole 23; the first through hole 23 located in the first sub-part 21 is filled with the same material as the material used to make the strain structure 20, and the second through hole 31 communicating with the first through hole 23 is filled with the same material as the material used to make the second electrode 30.

[0109] Optionally, such as Figure 8 As shown, the first through hole 23 is filled with the same material as the strain structure 20, and the second through hole 31 is filled with the same material as the second electrode 30.

[0110] Based on the same inventive concept, this application provides a display device, including: any of the pressure sensors provided in the above embodiments.

[0111] In this embodiment, the display device uses any of the pressure sensors provided in the foregoing embodiments. The principle and technical effects are described in the foregoing embodiments and will not be repeated here.

[0112] Optionally, in this embodiment, the display device is a mobile phone, tablet computer, laptop computer, or smart TV, etc.

[0113] Based on the same inventive concept, this application provides a method for manufacturing a pressure sensor, the flowchart of which is shown below. Figure 10 As shown, the steps S1001-S1005 are as follows:

[0114] S1001, a first electrode is formed on one side of the glass substrate.

[0115] S1002, a sacrificial structure is formed on the side of the first electrode away from the glass substrate.

[0116] S1003, based on deposition and patterning processes, forms an initial structure with through holes on the side of the sacrificial structure away from the glass substrate.

[0117] S1004, the sacrificial structure is removed through a through-hole, so that at least one cavity is formed between the first electrode and the initial structure.

[0118] S1005, based on the deposition process, fills the through-hole to form a strain structure with a first through-hole and a second electrode located on the side of the strain structure away from the glass substrate.

[0119] To facilitate readers' intuitive understanding of the specific manufacturing method of the pressure sensor provided in the embodiments of this application and the advantages of the pressure sensor manufactured using this method, a detailed explanation will be provided below in conjunction with the accompanying drawings.

[0120] In one embodiment of this application, forming a first electrode 10 on one side of the glass substrate 100 in step S1001 specifically includes: sequentially forming a first metal layer 101, a first dielectric layer 102, and a first electrode 10 on one side of the glass substrate 100 through a deposition process. Optionally, the deposition process is PECVD (Plasma Enhanced Chemical Vapor Deposition).

[0121] Optionally, the material of the first dielectric layer 102 includes silicon nitride. Optionally, the thickness of the first metal layer 101 is 50 nanometers, the thickness of the first dielectric layer 102 is 50 nanometers, and the thickness of the first electrode 10 is 50 nanometers. Optionally, the first metal layer 101 can function as the wiring layer of the pressure sensor array.

[0122] Optionally, to prevent subsequent etching of the sacrificial structure 80 from affecting the first electrode 10, a first protective layer 50 is formed on the side of the first electrode 10 away from the glass substrate 100. Optionally, the material of the first protective layer 50 includes silicon nitride, and the thickness of the first protective layer 50 is 50 nanometers.

[0123] In one embodiment of this application, the sacrificial structure formed on the side of the first electrode away from the glass substrate in step S1002 specifically includes:

[0124] First, a first sub-sacrificial structure 801 is formed on the side of the first electrode 10 away from the glass substrate 100, such as... Figure 11a As shown.

[0125] Optionally, the material of the first sub-sacrificial structure 801 includes silicon oxide, and the thickness of the first sub-sacrificial structure 801 is 600 nanometers. The formation temperature of the first sub-sacrificial structure 801 is less than 300 degrees Celsius.

[0126] Then, silicon oxide is deposited on one side of the first sub-sacrificial structure 801 to form a silicon oxide layer with a thickness of 300 nanometers. Next, the silicon oxide layer is patterned, and a sacrificial structure 80 is formed based on the first sub-sacrificial structure 801, as shown below. Figure 11b As shown.

[0127] In this embodiment, both the support layer 103 and the first protective layer 50 are made of silicon nitride, while the sacrificial structure 80 is made of silicon oxide. This allows the sacrificial structure 80 to be removed using a selective etching process without affecting the support layer and the first protective layer 50.

[0128] In one embodiment of this application, step S1003 above, based on deposition and patterning processes, forms an initial structure with through-holes on the side of the sacrificial structure away from the glass substrate, specifically including:

[0129] First, a support layer 103 is deposited on the side of the sacrificial structure 80 away from the glass substrate 100 and in the region of the glass substrate 100 not covered by the sacrificial structure 80, such as... Figure 11c As shown.

[0130] Optionally, the material of the support layer 103 includes silicon nitride, and the thickness of the support layer 103 is 400 nanometers.

[0131] Then, a second metal layer 104 is deposited on the side of the support layer 103 away from the glass substrate 100, such as... Figure 11d As shown. Optionally, the thickness of the second metal layer 104 is 50 nanometers.

[0132] Next, the support layer 103 and the second metal layer 104 are patterned to obtain an initial support structure 1031 with through holes and a second electrode 30, as shown below. Figure 11e As shown.

[0133] Optionally, the initial structure with through holes includes an initial support structure 1031 with a first through hole 23 and a second electrode 30 with a second through hole 31, wherein the first through hole 23 and the second through hole 31 are connected to form the through hole of the initial structure. The final strain structure 20 is formed after the first through hole 23 of the initial support structure 1031 is filled.

[0134] In one embodiment of this application, removing the sacrificial structure through a through-hole in step S1004 to form at least one cavity between the first electrode and the initial structure includes: removing the sacrificial structure 81 through a dry etching process to form at least one cavity 40 between the first electrode 10 and the initial structure, such as... Figure 11f As shown.

[0135] In one embodiment of this application, in step S1005 above, a via is filled based on a deposition process to form a strain structure 20 having a first via 23 and a second electrode 30 located on the side of the strain structure 20 away from the glass substrate 100, including:

[0136] Optionally, a second protective layer 70 is formed by a deposition process, and a portion of the second protective layer 70 fills the first through-hole 23 and the second through-hole 31, thereby obtaining the strain structure 20 and the second electrode 30 located on one side of the strain structure 20. A first terminal 61 connected to the first electrode 10 and a second terminal 62 connected to the second electrode 30 are formed by a patterning process and a deposition process, such as... Figure 11g As shown.

[0137] In one embodiment of this application, step S1003 above, based on deposition and patterning processes, forms an initial structure with through-holes on the side of the sacrificial structure away from the glass substrate, specifically including:

[0138] First, based on Figure 11b A support layer 103 is deposited on the side of the sacrificial structure 80 away from the glass substrate 100, resulting in... Figure 11c The structure shown.

[0139] Then, the support layer 103 is patterned, and through holes are formed in the region of the support layer 103 opposite to the first portion 81 of the sacrificial structure 80, resulting in an initial structure with through holes, such as... Figure 12a As shown.

[0140] Next, the sacrificial structure 80 is removed by a dry etching process, forming at least one chamber 40 between the first electrode 10 and the initial structure, such as... Figure 12b As shown.

[0141] And, based on deposition processes, filling vias includes:

[0142] A second protective layer 70 is formed by depositing a medium material on one side of the initial structure. Part of the second protective layer 70 fills the through-holes, forming a strained structure 20, such as... Figure 12c As shown.

[0143] Then, a metallic material is deposited on one side of the strain structure 20 to form a second electrode 30, a second terminal 62 connected to the second electrode 30, and a first terminal 61 connected to the first electrode 10. Optionally, a third protective layer 90 is deposited on one side of the second electrode 30, exposing the first terminal 61 and the second terminal 62, such as... Figure 12d As shown.

[0144] In one embodiment of this application, the patterning of the support layer and the second metal layer in the above steps to obtain an initial support structure with through holes and a second electrode 30 specifically includes: based on... Figure 13a The structure shown has through-holes formed in the region of the support layer 103 and the second metal layer 104 opposite the first portion 81 of the sacrificial structure 80, such as... Figure 13b As shown.

[0145] Then, the sacrificial structure 80 is removed, and a second protective layer 70 and a second terminal 62 are formed, as follows. Figure 13c As shown in the embodiments of this application. Figure 13c As shown, the first electrodes 10 of the two pressure sensors are connected to each other, and the second electrodes 30 of the two pressure sensors are also connected to each other, so that the two pressure sensors are connected in parallel to form a whole pressure sensor unit.

[0146] In one embodiment of this application, the patterning of the support layer and the second metal layer in the above steps to obtain an initial support structure with through holes and a second electrode 30 specifically includes: based on... Figure 13a The structure shown has through holes formed in the regions of the support layer 103 and the second metal layer 104 opposite to the first portion 81 and the second portion 82 of the sacrificial structure 80, such as... Figure 14a As shown.

[0147] Then, the sacrificial structure 80 is removed, and a second protective layer 70 and a second terminal 62 are formed, as follows. Figure 14b As shown in the embodiments of this application. Figure 14b As shown, the first electrodes 10 of the two pressure sensors are connected to each other, and the second electrodes 30 of the two pressure sensors are also connected to each other, so that the two pressure sensors are connected in parallel to form a whole pressure sensor unit.

[0148] In one embodiment of this application, the sacrificial structure formed on the side of the first electrode away from the glass substrate in the above steps specifically includes: forming a sacrificial structure 80 on one side of the first protective layer 50 based on a deposition process and a patterning process, such as... Figure 15aAs shown, the sacrificial structure 80 includes a first part 81, a second part 82, and a third part 83. Figure 15a In this section, the third part 83 is not connected to the first part 81 and the second part 82, but in other areas, the first part 81, the second part 82 and the third part 83 are connected as a whole sacrificial structure 80.

[0149] Then, a support layer 103 and a second metal layer 104 are sequentially deposited on one side of the sacrificial structure 80, as follows: Figure 15b As shown.

[0150] Optionally, the patterning of the support layer and the second metal layer in the above steps to obtain an initial support structure with through holes and a second electrode 30 specifically includes: etching the area of ​​the support layer 103 and the second metal layer 104 outside the sacrificial structure 80 to form through holes, such as... Figure 15c As shown.

[0151] Then, remove the sacrificial structure 80, as follows: Figure 15d As shown. Optionally, since the through hole (i.e., the first segment 231 of the first through hole 23) exposes the third portion 83 of the sacrificial structure 80, the second segment 232 of the first through hole 23 is formed by etching away the third portion 83, and then the portion 81 and the second portion 82 of the sacrificial structure 80 are etched away. In this embodiment, by setting the third portion 83 of the sacrificial structure 80, the integrity of the second electrode 30 can be further ensured. At the same time, it can avoid opening holes in the strain structure 20 opposite to the cavity 40, thereby ensuring the integrity of the strain structure 20 and further ensuring the sensitivity of the pressure sensor.

[0152] Next, a second protective layer 70 and a second terminal 62 are formed, as follows: Figure 15e As shown.

[0153] By applying the embodiments of this application, at least the following beneficial effects can be achieved:

[0154] In the pressure sensor provided in this application embodiment, by providing a strain structure 20 with a first through hole, it is convenient to remove the sacrificial structure through the unfilled first through hole during the fabrication process of the pressure sensor. This allows the strain structure 20 and the first electrode 10 to enclose at least one chamber. The strain structure 20 can support the second electrode 30, thereby improving the formation rate of the second electrode 30 and ensuring its structural strength, thus reducing the fabrication difficulty of the pressure sensor. Moreover, in this application embodiment, the pressure sensor is based on a glass substrate 100, which significantly reduces the fabrication cost compared to a silicon substrate.

[0155] Those skilled in the art will understand that the steps, measures, and solutions in the various operations, methods, and processes discussed in this application can be alternated, modified, combined, or deleted. Furthermore, other steps, measures, and solutions in the various operations, methods, and processes discussed in this application can also be alternated, modified, rearranged, decomposed, combined, or deleted. Furthermore, steps, measures, and solutions in the prior art that are similar to those disclosed in this application can also be alternated, modified, rearranged, decomposed, combined, or deleted.

[0156] In the description of this application, the terms "center," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," and "outer," etc., indicate directions or positional relationships based on the exemplary directions or positional relationships shown in the accompanying drawings. They are used to facilitate the description or simplification of the embodiments of this application and are not intended to indicate or imply that the device or component referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.

[0157] The terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this application, unless otherwise stated, "a plurality of" means two or more.

[0158] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installation," "connection," and "joining" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal communication between two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0159] In the description of this specification, specific features, structures, materials, or characteristics may be combined in any suitable manner in one or more embodiments or examples.

[0160] It should be understood that although the steps in the flowcharts of the accompanying drawings are shown sequentially according to the arrows, the order in which these steps are implemented is not limited to the order indicated by the arrows. Unless explicitly stated herein, in some implementation scenarios of this application, the steps in each process can be executed in other orders as required. Moreover, some or all of the steps in each flowchart may include multiple sub-steps or multiple stages based on the actual implementation scenario. Some or all of these sub-steps or stages may be executed at the same time or at different times. In scenarios where the execution times are different, the execution order of these sub-steps or stages can be flexibly configured according to requirements, and this application does not limit this.

[0161] The above description is only a partial implementation of this application. It should be noted that for those skilled in the art, other similar implementation methods based on the technical concept of this application, without departing from the technical concept of this application, also fall within the protection scope of the embodiments of this application.

Claims

1. A pressure sensor, characterized in that, include: Glass substrate; The first electrode is disposed on one side of the glass substrate; A strain structure is disposed on the side of the first electrode away from the glass substrate, the strain structure and the first electrode enclose each other to form at least one cavity, and the strain structure has a first through hole; The second electrode is disposed on the side of the strain structure away from the glass substrate; The strain structure includes a first sub-section and a second sub-section connected together; The first sub-part is disposed on the side of the first electrode away from the glass substrate, and the first sub-part and the first electrode enclose to form a first sub-cavity of the cavity; the second sub-part and the first electrode enclose to form a second sub-cavity of the cavity; A first protective layer is provided between the strain structure and the first electrode. Part of the first sub-part is directly connected to the first protective layer to support the second sub-part. When the second electrode is subjected to pressure, the second sub-part deforms first, which in turn causes the first sub-part to deform.

2. The pressure sensor according to claim 1, characterized in that, The second electrode has a second through hole, which communicates with the first through hole, and the first through hole communicates with the chamber; both the first through hole and the second through hole extend in a direction perpendicular to the glass substrate.

3. The pressure sensor according to claim 1, characterized in that, The orthographic projection of the first sub-part onto the glass substrate surrounds the orthographic projection of the second sub-part onto the glass substrate; At least one of the first sub-part and the second sub-part has a plurality of the first through holes.

4. The pressure sensor according to claim 1, characterized in that, The first through-hole includes a first hole segment and a second hole segment; the first hole segment extends in a direction perpendicular to the glass substrate, and the second hole segment extends in a direction parallel to the glass substrate.

5. The pressure sensor according to claim 1, characterized in that, The strain structure includes a medium structure filled within the first through-hole.

6. A display device, characterized in that, include: The pressure sensor as described in any one of claims 1-5.

7. A method for manufacturing a pressure sensor, characterized in that, include: A first electrode is formed on one side of the glass substrate; A sacrificial structure is formed on the side of the first electrode away from the glass substrate; Based on deposition and patterning processes, an initial structure with through holes is formed on the side of the sacrificial structure away from the glass substrate; The sacrificial structure is removed through the through-hole, thereby forming at least one chamber between the first electrode and the initial structure; The via is filled by a deposition process to form a strain structure with a first via and a second electrode located on the side of the strain structure away from the glass substrate; The strain structure includes a first sub-section and a second sub-section connected together; The first sub-part is disposed on the side of the first electrode away from the glass substrate, and the first sub-part and the first electrode enclose to form a first sub-cavity of the cavity; the second sub-part and the first electrode enclose to form a second sub-cavity of the cavity; A first protective layer is provided between the strain structure and the first electrode. Part of the first sub-part is directly connected to the first protective layer to support the second sub-part. When the second electrode is subjected to pressure, the second sub-part deforms first, which in turn causes the first sub-part to deform.

8. The method for manufacturing the sensor according to claim 7, characterized in that, The method of forming an initial structure with through-holes on the side of the sacrificial structure away from the glass substrate based on deposition and patterning processes includes: A support layer and a second metal layer are sequentially deposited on the side of the sacrificial structure away from the glass substrate; The support layer and the second metal layer are patterned to obtain an initial support structure with through holes and the second electrode; Furthermore, the method of filling the via based on the deposition process includes: depositing a dielectric material on one side of the second electrode to fill the via, forming the strain structure in which the dielectric structure is filled in the first via.

9. The method for manufacturing the pressure sensor according to claim 8, characterized in that, The patterning of the support layer and the second metal layer to obtain an initial support structure with through holes and the second electrode includes: A through-hole is formed in the region of the support layer and the second metal layer opposite to the first portion of the sacrificial structure; Alternatively, a through-hole may be formed in the region of the support layer and the second metal layer opposite to the second portion of the sacrificial structure; Alternatively, through-holes may be formed in both the support layer and the second metal layer in the regions opposite the first and second portions of the sacrificial structure.

10. The method for manufacturing the pressure sensor according to claim 7, characterized in that, The method of forming an initial structure with through-holes on the side of the sacrificial structure away from the glass substrate based on deposition and patterning processes includes: A support layer is deposited on the side of the sacrificial structure away from the glass substrate; The support layer is patterned, and through holes are formed in the region of the support layer opposite to the first part of the sacrificial structure to obtain the initial structure with through holes; Furthermore, the process of filling the via based on a deposition process includes: depositing a dielectric material on one side of the initial structure to fill the via, forming the strained structure; and depositing a metallic material on one side of the strained structure to form the second electrode.

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