Integrated processing method of chip integrated communication detection signal based on coating structure
By covering a two-dimensional layered material plating in the chip integrated optical path, and adjusting the waveguide refractive index by electrotropics and photogenerating effects, the integrated processing of communication signals and detection signals in the chip integrated optical path is achieved, solving the problem of difficult to achieve electro-optical phase modulation and signal integrated processing in the prior art, and improving the versatility of the Internet of Things terminals and the maturity of hardware facilities.
Patent Information
- Application Number
- CN202110563343.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2021-05-24
- Publication Date
- 2025-03-18
- Estimated Expiration
- 2041-05-24
AI Technical Summary
The prior art is difficult to realize electro-free carrier adjustment and photo-free carrier adjustment in the chip integrated optical path, and thus it is difficult to realize all-optical communication signal modulation and detection signal encoding, and it is difficult to realize integrated processing of communication and detection signals.
By covering the voltage-sensitive and photosensitive two-dimensional layered material plating on the surface of the integrated waveguide of the chip, the free carrier concentration is adjusted using electrotropic and photometric effects, thereby adjusting the refractive index of the integrated waveguide of the chip, realizing electro-optical phase modulation of the transmission light field, and thus realizing the loading and integrated processing of communication signals and detection signals.
It realizes the processing of communication signals and detection signals on a single chip and a single link, improves the dissipation speed and modulation depth of free carriers, solves the problem of silicon-based electro-optical modulation, and promotes the versatility of IoT terminals and the maturity of hardware facilities.
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Figure CN115390284B_ABST
Abstract
Description
Technical Field
[0001] The present invention belongs to the interdisciplinary field of integrated optics, optical communication, optical detection and microwave photonics, and specifically refers to a method for realizing communication signal encoding by adjusting the refractive index of a chip integrated waveguide by electrically induced free carriers of a transition metal sulfide two-dimensional layered material coating, realizing light intensity detection by utilizing the photoinduced free carriers of the coating to adjust the refractive index of a chip integrated waveguide, and realizing integrated processing of communication detection signals by dual polarization interference, and more particularly relates to a chip integrated communication detection signal integrated processing method, system and storage medium based on a coating structure. Background Art
[0002] Compared with traditional discrete free-space optical paths and all-fiber optical paths, chip-integrated optical paths have many advantages, such as small size, low power consumption, stable performance, high integration, mass production, and optoelectronic integration. They are the preferred technical solution for large-scale complex optical systems such as optical communication systems, optical computing systems, all-optical signal processing systems, and microwave photonic systems. Various optical devices prepared based on chip-integrated optical paths, including wavelength division multiplexers, optical directional couplers, optical filters, nonlinear wavelength converters, and nonlinear optical frequency comb light sources, play an indispensable role in modern optoelectronic systems.
[0003] With the continuous development of Internet of Things technology, the scale of communication nodes has increased exponentially, and the perception capabilities of sensors have continued to rise, which has put higher requirements on the performance and functions of terminal devices. The advantages of chip-integrated optoelectronic systems have become increasingly prominent: optical communication systems have many advantages such as high speed, large bandwidth, and resistance to electromagnetic interference; optical detection systems have many advantages such as high precision and large dynamic range; using a single chip to hybrid integrate optical communication systems and optical detection systems can greatly improve the practicality of Internet of Things terminal devices and lay a hardware foundation for the development of smart Internet of Things. Summary of the invention
[0004] Based on the problems of the prior art, the technical problems to be solved by the present invention are:
[0005] How to coat the surface of the transmission waveguide with a voltage-sensitive two-dimensional layered material and grow an external electrode, how to load the communication signal into the coating in the form of a modulated voltage, change the free carrier concentration, adjust the refractive index of the chip integrated waveguide, and realize the electro-optical phase modulation of the transmission light field, that is, to realize all-optical communication signal modulation;
[0006] How to coat the surface of the transmission waveguide with a photosensitive two-dimensional layered material, so that the light intensity irradiation causes the free carrier concentration to change, adjust the refractive index of the chip integrated waveguide, and realize the detection signal coding loading;
[0007] How to combine and transmit communication signals and detection signals in orthogonal polarization mode to achieve integrated processing of communication and detection signals.
[0008] In view of the defects existing in the prior art, the purpose of the present invention is to provide a chip-integrated communication detection signal integrated processing method based on a coating structure, and realize the integrated processing of communication detection signals through a single optoelectronic chip. The present invention makes full use of the performance advantages of the coating structure in high-performance electro-optical modulation and high-sensitivity photoelectric effect, and realizes the integration of the communication detection dual system through a single chip, which is a miniaturized, tightly coupled multifunctional terminal device of the Internet of Things.
[0009] In order to achieve the above-mentioned effects, the present invention provides a chip-integrated communication detection signal integrated processing method based on a coating structure, which is executed by a system consisting of a polarization beam splitter, an optical beam splitter and a communication signal processor. The pulse optical carrier is separated into two optical paths by a polarization-insensitive optical beam splitter. The horizontally polarized light field and the vertically polarized light field contained in each optical path are separated by a polarization beam splitter. A voltage-sensitive two-dimensional layered material is coated on the surface of the chip-integrated waveguide and a modulation voltage carrying a high-speed communication signal is applied, and the refractive index of the waveguide is adjusted by electro-induced free carriers to achieve communication signal loading of the transmission light field; a photosensitive two-dimensional layered material is coated on the surface of the chip-integrated waveguide and receives light intensity irradiation, and the refractive index of the waveguide is adjusted by photo-generated free carriers to achieve detection signal loading of the transmission light field; the communication signal and the detection signal are combined and transmitted by orthogonal polarization, and the integrated processing of the communication detection signal is achieved through a single optoelectronic chip.
[0010] Preferably, the above method specifically includes:
[0011] S101, a pulse optical carrier is separated into two optical paths by a polarization-insensitive optical beam splitter, and a horizontally polarized light field and a vertically polarized light field contained in each optical path are separated by a polarization beam splitter;
[0012] S102, covering the photosensitive two-dimensional layered material coating with the horizontally polarized light field transmission waveguide in the upper arm transmission path, and covering the voltage-sensitive two-dimensional layered material coating with the vertically polarized light field transmission waveguide in the lower arm transmission path;
[0013] S103, the polarization components in the transmission paths of the upper and lower arms are combined by the polarization beam splitter, and then interfered and outputted again by the polarization-insensitive optical beam splitter;
[0014] S104, a modulated signal carrying communication information is applied to the voltage-sensitive two-dimensional layered material coating through an external electrode, so as to change the phase of the vertical polarized light field of the lower arm, while the phase of the vertical polarized light field of the upper arm remains unchanged, and the two interfere with each other to obtain an intensity modulated communication signal;
[0015] S105. The photosensitive two-dimensional layered material coating senses the irradiation and changes the phase of the horizontally polarized light field of the upper arm, while the phase of the horizontally polarized light field of the lower arm remains unchanged. The two interfere with each other to obtain an intensity modulated detection signal.
[0016] Preferably, the detection signal and the communication signal of the above method are combined for transmission to produce complementary crosstalk, and when they need to be demodulated separately, they can be processed separately using only a polarization beam splitter.
[0017] Preferably, the pulse optical carrier in the above S101 is a pulse optical carrier with 45° linear polarization, and the optical beam splitter is a 50%-50% optical beam splitter.
[0018] Preferably, the above method comprises:
[0019] S1. Loading of communication signals: Loading the communication signals onto the voltage-sensitive two-dimensional layered material coating through external electrodes, adjusting the refractive index of the chip integrated waveguide by changing the free carrier concentration and realizing electro-optical phase modulation of the transmitted light field, and generating an all-optical communication signal whose intensity replicates the electrical signal through structures such as interferometers;
[0020] S2. Loading of detection signals, focusing the irradiated light field to be detected on the photosensitive two-dimensional layered material coating, adjusting the refractive index of the chip integrated waveguide by changing the free carrier concentration and realizing the electro-optical phase modulation of the transmitted light field, and generating a detection signal whose intensity replicates the irradiated signal through structures such as interferometers;
[0021] S3. Combined transmission of communication signals and detection signals. Polarize the transmission light fields corresponding to the communication signals and detection signals in orthogonal directions. Combined transmission of the communication signals and detection signals is achieved through devices such as polarization beam combiners and polarization-insensitive 50%-50% optical beam combiners, thereby realizing integrated processing of communication and detection signals with two functions implemented simultaneously on the same chip and the same link.
[0022] Preferably, the above method comprises:
[0023] Step 1: Prepare the transmission waveguide required for electro-optical modulation and light intensity detection, and optimize the cross-sectional structure;
[0024] Step 2: non-destructively transfer the two-dimensional layered material coating to the waveguide surface by chemical vapor deposition or other methods, and optimize the design of the voltage-sensitive coating thickness;
[0025] Step 3: Modulate the communication signal and the detection signal on different polarization states respectively, use the polarization division multiplexing method to realize combined transmission and separate demodulation, and complete the integrated processing of communication and detection signals.
[0026] Preferably, the above step 1 is optimized to make the transmission loss low and the waveguide refractive index change sensitively, the waveguide length for electro-optical modulation needs to be optimized to take into account both low transmission loss and large modulation depth, and the spatial arrangement needs to be optimized to make the coating structure as accurately covered as possible and easy to grow low contact resistance external electrodes.
[0027] Preferably, the above step 2 is optimized to maximize the free carrier concentration per unit voltage and minimize the dissipation time, and the thickness of the photosensitive coating needs to be optimized to maximize the dynamic range of free carrier concentration per unit light intensity and minimize the switching time. The coating can fit tightly to the upper and side surfaces of the waveguide and only fits to the upper surface, and the voltage-sensitive coating material needs to be insensitive to light.
[0028] A system for realizing the integrated processing method of chip integrated communication detection signals based on the coating structure as described above, comprising a system consisting of a polarization beam splitter, an optical beam splitter and a communication signal processor, and also comprising a communication signal loading module, a sensor signal loading module, a communication signal demodulation module and a sensor signal demodulation module, wherein:
[0029] The communication signal loading module is used to load the communication signal onto the voltage-sensitive two-dimensional layered material coating through an external electrode, adjust the refractive index of the chip integrated waveguide by changing the free carrier concentration and realize the electro-optical phase modulation of the transmitted light field, and generate an all-optical communication signal whose intensity replicates the electrical signal through structures such as an interferometer;
[0030] The detection signal loading module is used to focus the irradiated light field to be detected on the photosensitive two-dimensional layered material coating, adjust the refractive index of the chip integrated waveguide by changing the free carrier concentration and realize the electro-optical phase modulation of the transmitted light field, and generate a detection signal whose intensity replicates the irradiated signal through structures such as interferometers;
[0031] The communication signal and detection signal combined transmission module is used to polarize the transmission light fields corresponding to the communication signal and the detection signal in orthogonal directions, and combine and transmit the communication signal and the detection signal through devices such as polarization beam combiners and polarization-insensitive 50%-50% optical beam combiners, thereby realizing integrated processing of communication and detection signals with the same chip, the same link, and the simultaneous implementation of two functions.
[0032] A computer-readable storage medium stores a computer program, which implements the above method when executed by a processor.
[0033] A computer program product comprises a computer program / instruction, which implements the steps of the above method when executed by a processor.
[0034] Compared with the prior art, the present invention has the following advantages:
[0035] 1. The present invention can solve the problem of silicon-based electro-optical modulation through the coating structure, improve the free carrier dissipation speed, increase the modulation depth and modulation bandwidth, and prevent waveguide breakdown caused by excessive modulation voltage;
[0036] 2. The integrated communication detection signal processing method proposed in the present invention can realize two functions simultaneously on a set of chips and a link, providing a solution for the multifunctional Internet of Things information terminal based on chip-integrated microwave photonic system;
[0037] 3. The system described in the present invention has a simple structure, reliable performance, and is highly compatible with existing preparation processes. It is particularly suitable for realizing a hybrid integrated optoelectronic system with a large system scale, complex structure and functions, a large number of devices, and support for multiple functions, and promotes the mature implementation of hardware facilities for the Internet of Everything. BRIEF DESCRIPTION OF THE DRAWINGS
[0038] In order to more clearly illustrate the technical solution of the embodiment of the present invention, the following briefly introduces the drawings required for use in the embodiment of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.
[0039] Figure 1 A schematic diagram showing the working principle of integrated processing of chip-integrated communication detection signals based on a coating structure of the present invention is shown. DETAILED DESCRIPTION
[0040] The features and exemplary embodiments of various aspects of the present invention will be described in detail below. In order to make the purpose, technical solutions and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and Examples. It should be understood that the specific embodiments described herein are only configured to explain the present invention and are not configured to limit the present invention. For those skilled in the art, the present invention can be implemented without the need for some of these specific details. The following description of the embodiments is only to provide a better understanding of the present invention by illustrating examples of the present invention.
[0041] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the statement "include..." do not exclude the presence of other identical elements in the process, method, article or device including the elements.
[0042] The present invention provides an embodiment of a chip-integrated communication detection signal integrated processing method based on a coating structure, which is executed by a system consisting of a polarization beam splitter, an optical beam splitter and a communication signal processor. The pulse optical carrier is separated into two optical paths by a polarization-insensitive optical beam splitter. The horizontally polarized light field and the vertically polarized light field contained in each optical path are separated by the polarization beam splitter. A voltage-sensitive two-dimensional layered material is coated on the surface of a chip-integrated waveguide and a modulation voltage carrying a high-speed communication signal is applied. The refractive index of the waveguide is adjusted by electro-induced free carriers to achieve communication signal loading of the transmission light field. A photosensitive two-dimensional layered material is coated on the surface of a chip-integrated waveguide and receives light intensity irradiation. The refractive index of the waveguide is adjusted by photo-generated free carriers to achieve detection signal loading of the transmission light field. The communication signal and the detection signal are combined and transmitted by orthogonal polarization, and the integrated processing of the communication detection signal is achieved by a single optoelectronic chip.
[0043] In some embodiments, the chip integrated waveguide can be prepared by a standard chip integrated optical path process, has a certain degree of freedom in structural design, can efficiently and losslessly transmit light fields, and can produce a change in refractive index under the action of free carriers. The material platform used for the chip integrated waveguide includes but is not limited to silicon on insulator, hydrogenated amorphous silicon, silicon nitride, silicon carbide, chalcogenide glass, high refractive index quartz, III-V aluminum gallium arsenide, III-V indium phosphide, etc., and can adopt a single material integration method or a multi-material hybrid integration method;
[0044] In some embodiments, the coating can control parameters through the growth process, can be transferred losslessly to the surface of the chip integrated waveguide through standard processes and achieve close fitting, and can accurately control electro-optical parameters with crystal structure and layer thickness as degrees of freedom; the voltage-sensitive two-dimensional layered material coating can serve as a substrate to stably grow electrodes and produce physical responses such as changes in free carrier concentration under the action of external voltage; the photosensitive two-dimensional layered material can generate photoinduced free carriers and cause changes in the refractive index of the waveguide. The coating materials include but are not limited to graphene, molybdenum disulfide, tungsten sulfide, perovskite, etc., and the specific structural parameters and preparation process are not limited.
[0045] In some embodiments, the integrated processing of communication and sensor signals utilizes the same chip integrated optical system to realize the generation and combined transmission of communication signals and sensor signals. The communication signals and sensor signals can be compiled in different optical degrees of freedom or in different basis vector directions of the same optical degree of freedom. The coding degrees of freedom include but are not limited to intensity, polarization, phase, mode, etc., and do not limit the waveguide structure parameters, external electrode structure and process, specific structure of the encoding and decoding system, and detection method. They do not limit the specific communication coding protocol and the specific light field band to be measured, and do not limit the specific application scenarios of the integrated processing of communication and detection signals.
[0046] The present invention provides an embodiment of a chip integrated communication detection signal integrated processing method based on a plating structure, comprising:
[0047] S101, a pulse optical carrier is separated into two optical paths by a polarization-insensitive optical beam splitter, and a horizontally polarized light field and a vertically polarized light field contained in each optical path are separated by a polarization beam splitter;
[0048] S102, covering the photosensitive two-dimensional layered material coating with the horizontally polarized light field transmission waveguide in the upper arm transmission path, and covering the voltage-sensitive two-dimensional layered material coating with the vertically polarized light field transmission waveguide in the lower arm transmission path;
[0049] S103, the polarization components in the transmission paths of the upper and lower arms are combined by the polarization beam splitter, and then interfered and outputted again by the polarization-insensitive optical beam splitter;
[0050] S104, a modulated signal carrying communication information is applied to the voltage-sensitive two-dimensional layered material coating through an external electrode, so as to change the phase of the vertical polarized light field of the lower arm, while the phase of the vertical polarized light field of the upper arm remains unchanged, and the two interfere with each other to obtain an intensity modulated communication signal;
[0051] S105. The photosensitive two-dimensional layered material coating senses the irradiation and changes the phase of the horizontally polarized light field of the upper arm, while the phase of the horizontally polarized light field of the lower arm remains unchanged. The two interfere with each other to obtain an intensity modulated detection signal.
[0052] In some embodiments, the detection signal and the communication signal are combined to transmit complementary crosstalk, and when they need to be demodulated separately, they can be processed separately using only a polarization beam splitter.
[0053] In some embodiments, the pulse optical carrier in S101 is a pulse optical carrier with 45° linear polarization, and the optical beam splitter is a 50%-50% optical beam splitter.
[0054] The present invention provides an embodiment of a chip integrated communication detection signal integrated processing method based on a plating structure, comprising:
[0055] S1. Loading of communication signals: Loading the communication signals onto the voltage-sensitive two-dimensional layered material coating through external electrodes, adjusting the refractive index of the chip integrated waveguide by changing the free carrier concentration and realizing electro-optical phase modulation of the transmitted light field, and generating an all-optical communication signal whose intensity replicates the electrical signal through structures such as interferometers;
[0056] S2. Loading of detection signals, focusing the irradiated light field to be detected on the photosensitive two-dimensional layered material coating, adjusting the refractive index of the chip integrated waveguide by changing the free carrier concentration and realizing the electro-optical phase modulation of the transmitted light field, and generating a detection signal whose intensity replicates the irradiated signal through structures such as interferometers;
[0057] S3. Combined transmission of communication signals and detection signals. Polarize the transmission light fields corresponding to the communication signals and detection signals in orthogonal directions. Combined transmission of the communication signals and detection signals is achieved through devices such as polarization beam combiners and polarization-insensitive 50%-50% optical beam combiners, thereby realizing integrated processing of communication and detection signals with two functions implemented simultaneously on the same chip and the same link.
[0058] Figure 1 The integrated processing example of communication detection signals is demonstrated. First, a 45° linearly polarized pulse optical carrier is separated into two optical paths through a polarization-insensitive 50%-50% optical beam splitter, and the horizontally polarized light field and the vertically polarized light field contained in each optical path are separated by a polarization beam splitter; in the upper arm transmission path, the horizontally polarized light field transmission waveguide is covered with a photosensitive two-dimensional layered material coating, and in the lower arm transmission path, the vertically polarized light field transmission waveguide is covered with a voltage-sensitive two-dimensional layered material coating; after the polarization components in the upper and lower arm transmission paths are combined by a polarization beam splitter, they are again output through interference by a polarization-insensitive 50%-50% optical beam splitter. A modulated signal carrying communication information is applied to a voltage-sensitive two-dimensional layered material coating through an external electrode, thereby changing the phase of the vertically polarized light field of the lower arm, while the phase of the vertically polarized light field of the upper arm remains unchanged. An intensity-modulated communication signal is obtained by interference between the two. The photosensitive two-dimensional layered material coating senses the irradiation, changes the phase of the horizontally polarized light field of the upper arm, while the phase of the horizontally polarized light field of the lower arm remains unchanged. An intensity-modulated detection signal is obtained by interference between the two. The detection signal and the communication signal are combined to transmit complementary crosstalk, and when they need to be demodulated separately, they can be processed separately using a polarization beam splitter.
[0059] The present invention provides an embodiment of a chip integrated communication detection signal integrated processing method based on a plating structure, comprising:
[0060] Step 1: Prepare the transmission waveguide required for electro-optical modulation and light intensity detection, and optimize the cross-sectional structure;
[0061] Step 2: non-destructively transfer the two-dimensional layered material coating to the waveguide surface by chemical vapor deposition or other methods, and optimize the design of the voltage-sensitive coating thickness;
[0062] Step 3: Modulate the communication signal and the detection signal on different polarization states respectively, use the polarization division multiplexing method to realize combined transmission and separate demodulation, and complete the integrated processing of communication and detection signals.
[0063] In some embodiments, step one optimizes the design so that the transmission loss is low and the waveguide refractive index changes sensitively. The waveguide length for electro-optical modulation needs to be optimized to take into account both low transmission loss and large modulation depth. The spatial arrangement needs to be optimized to make the coating structure as accurately covered as possible and easy to grow low contact resistance external electrodes.
[0064] In some embodiments, the step 2 is optimized to maximize the free carrier concentration per unit voltage and minimize the dissipation time. The photosensitive coating thickness needs to be optimized to maximize the dynamic range of free carrier concentration per unit light intensity and minimize the switching time. The coating can fit tightly to the upper and side surfaces of the waveguide and only fit to the upper surface. The voltage-sensitive coating material needs to be insensitive to light.
[0065] The present invention provides a system embodiment for realizing the above-mentioned chip integrated communication detection signal integrated processing method based on the coating structure, comprising a system composed of a polarization beam splitter, an optical beam splitter and a communication signal processor, and also comprising a communication signal loading module, a sensor signal loading module, a communication signal demodulation module and a sensor signal demodulation module, wherein:
[0066] The communication signal loading module is used to load the communication signal onto the voltage-sensitive two-dimensional layered material coating through an external electrode, adjust the refractive index of the chip integrated waveguide by changing the free carrier concentration and realize the electro-optical phase modulation of the transmitted light field, and generate an all-optical communication signal whose intensity replicates the electrical signal through structures such as an interferometer;
[0067] The detection signal loading module is used to focus the irradiated light field to be detected on the photosensitive two-dimensional layered material coating, adjust the refractive index of the chip integrated waveguide by changing the free carrier concentration and realize the electro-optical phase modulation of the transmitted light field, and generate a detection signal whose intensity replicates the irradiated signal through structures such as interferometers;
[0068] The communication signal and detection signal combined transmission module is used to polarize the transmission light fields corresponding to the communication signal and the detection signal in orthogonal directions, and combine and transmit the communication signal and the detection signal through devices such as polarization beam combiners and polarization-insensitive 50%-50% optical beam combiners, thereby realizing integrated processing of communication and detection signals with the same chip, the same link, and the simultaneous implementation of two functions.
[0069] The present invention also provides an embodiment of a computer-readable storage medium, on which a computer program is stored, and when the program is executed by a processor, the above method is implemented.
[0070] The present invention also provides an embodiment of a computer program, which implements the above method when executed by a processor.
[0071] Compared with the prior art, the present invention has the following advantages:
[0072] Firstly, the present invention can solve the problem of silicon-based electro-optical modulation through the coating structure, improve the free carrier dissipation speed, increase the modulation depth and modulation bandwidth, and prevent waveguide breakdown caused by excessive modulation voltage;
[0073] Secondly, the integrated communication detection signal processing method proposed in the present invention can realize two functions simultaneously on one chip and one link, providing an important solution for the multifunctional Internet of Things information terminal based on chip integrated microwave photonic system;
[0074] In addition, the system described in the present invention has a simple structure, reliable performance, and is highly compatible with existing preparation processes. It is particularly suitable for realizing a hybrid integrated optoelectronic system with a large system scale, complex structure and functions, a large number of devices, and support for multiple functions, and promotes the mature implementation of hardware facilities for the Internet of Things.
[0075] For the convenience of description, the above device is described in various units according to their functions. Of course, when implementing the present application, the functions of each unit can be implemented in the same or multiple software and / or hardware.
[0076] Those skilled in the art will appreciate that embodiments of the present invention may be provided as methods, systems, or computer program products. Therefore, the present invention may take the form of a complete hardware embodiment, a complete software embodiment, or an embodiment combining software and hardware. Moreover, the present invention may take the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.
[0077] The present invention is described with reference to flowcharts and / or block diagrams of methods, devices (systems), and computer program products according to embodiments of the present invention. It should be understood that each process and / or block in the flowchart and / or block diagram, as well as the combination of processes and / or blocks in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing device to produce a machine, so that the instructions executed by the processor of the computer or other programmable data processing device generate instructions for implementing the processes in the flowchart and / or block diagram. Figure 1 A process or multiple processes and / or boxes Figure 1 A device that provides the functions specified in a block or multiple blocks.
[0078] The present application may be described in the general context of computer-executable instructions executed by a computer, such as program modules. Generally, program modules include routines, programs, objects, components, data structures, etc. that perform specific tasks or implement specific abstract data types. The present application may also be practiced in distributed computing environments where tasks are performed by remote processing devices connected through a communication network. In a distributed computing environment, program modules may be located in local and remote computer storage media, including storage devices.
[0079] These computer program instructions may also be stored in a computer-readable memory capable of directing a computer or other programmable data processing device to operate in a specific manner, so that the instructions stored in the computer-readable memory produce an article of manufacture including an instruction device, which implements the process Figure 1 A process or multiple processes and / or boxes Figure 1 A function specified in one or more boxes.
[0080] These computer program instructions can also be loaded onto a computer or other programmable data processing device so that a series of operating steps are executed on the computer or other programmable device to produce a computer-implemented process, thereby providing instructions for implementing the process. Figure 1 A process or multiple processes and / or boxes Figure 1 The steps for the functions specified in one or more boxes.
[0081] In a typical configuration, a computing device includes one or more processors (CPU), input / output interfaces, network interfaces, and memory.
[0082] The memory may include non-permanent storage in a computer-readable medium, random access memory (RAM) and / or non-volatile memory in the form of read-only memory (ROM) or flash RAM. The memory is an example of a computer-readable medium.
[0083] Computer readable media include permanent and non-permanent, removable and non-removable media that can be implemented by any method or technology to store information. Information can be computer readable instructions, data structures, program modules or other data. Examples of computer storage media include, but are not limited to, phase change memory (PRAM), static random access memory (SRAM), dynamic random access memory (DRAM), other types of random access memory (RAM), read-only memory (ROM), electrically erasable programmable read-only memory (EEPROM), flash memory or other memory technology, compact disk read-only memory (CD-ROM), digital versatile disk (DVD) or other optical storage, magnetic cassettes, magnetic tape magnetic disk storage or other magnetic storage devices or any other non-transmission media that can be used to store information that can be accessed by a computing device. As defined herein, computer readable media does not include temporary computer readable media (transitory media), such as modulated data signals and carrier waves.
[0084] It should also be noted that the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, commodity or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, commodity or device. In the absence of more restrictions, the elements defined by the sentence "comprises a ..." do not exclude the existence of other identical elements in the process, method, commodity or device including the elements.
[0085] Each embodiment in this specification is described in a progressive manner, and the same or similar parts between the embodiments can be referred to each other, and each embodiment focuses on the differences from other embodiments. In particular, for the system embodiment, since it is basically similar to the method embodiment, the description is relatively simple, and the relevant parts can be referred to the partial description of the method embodiment.
[0086] The above is only an embodiment of the present application and is not intended to limit the present application. For those skilled in the art, the present application may have various changes and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the scope of the claims of the present application.
Claims
1. A chip-integrated communication detection signal integrated processing method based on a coating structure is executed by a system consisting of a polarization beam splitter, an optical beam splitter and a communication signal processor. The pulse optical carrier is separated into two optical paths by a polarization-insensitive optical beam splitter. The horizontally polarized light field and the vertically polarized light field contained in each optical path are separated by a polarization beam splitter. A voltage-sensitive two-dimensional layered material is coated on the surface of a chip-integrated waveguide and a modulation voltage carrying a high-speed communication signal is applied, and the refractive index of the waveguide is adjusted by electro-induced free carriers to achieve communication signal loading of the transmission light field; a photosensitive two-dimensional layered material is coated on the surface of a chip-integrated waveguide and receives light intensity irradiation, and the refractive index of the waveguide is adjusted by photo-generated free carriers to achieve detection signal loading of the transmission light field; the communication signal and the detection signal are combined and transmitted by orthogonal polarization, and the integrated processing of the communication detection signal is achieved through a single optoelectronic chip.
2. The integrated processing method for chip integrated communication detection signals based on the coating structure according to claim 1 is characterized in that: The method specifically comprises: S101, a pulse optical carrier is separated into two optical paths by a polarization-insensitive optical beam splitter, and a horizontally polarized light field and a vertically polarized light field contained in each optical path are separated by a polarization beam splitter; S102, covering the photosensitive two-dimensional layered material coating with the horizontally polarized light field transmission waveguide in the upper arm transmission path, and covering the voltage-sensitive two-dimensional layered material coating with the vertically polarized light field transmission waveguide in the lower arm transmission path; S103, the polarization components in the transmission paths of the upper and lower arms are combined by the polarization beam splitter, and then interfered and outputted again by the polarization-insensitive optical beam splitter; S104, applying a modulated signal carrying communication information to the voltage-sensitive two-dimensional layered material coating through an external electrode, changing the phase of the vertical polarized light field of the lower arm, while the phase of the vertical polarized light field of the upper arm remains unchanged, and the two interfere to obtain an intensity modulated communication signal; S105. The photosensitive two-dimensional layered material coating senses the irradiation and changes the phase of the horizontally polarized light field of the upper arm, while the phase of the horizontally polarized light field of the lower arm remains unchanged. The two interfere with each other to obtain an intensity modulated detection signal.
3. The integrated processing method for chip integrated communication detection signals based on the coating structure according to claim 2 is characterized in that: In the method, the detection signal and the communication signal are combined for transmission to complement crosstalk, and when they need to be demodulated separately, they can be processed separately by only using a polarization beam splitter.
4. The integrated processing method for chip integrated communication detection signals based on a coating structure according to claim 2 is characterized in that: The pulse optical carrier in S101 is a pulse optical carrier with 45° linear polarization, and the optical beam splitter is a 50%-50% optical beam splitter.
5. The integrated processing method for chip integrated communication detection signals based on a coating structure according to claim 1, characterized in that: The method comprises: S1. Loading of communication signals: Loading the communication signals onto the voltage-sensitive two-dimensional layered material coating through external electrodes, adjusting the refractive index of the chip integrated waveguide by changing the free carrier concentration and realizing electro-optical phase modulation of the transmitted light field, and generating an all-optical communication signal whose intensity replicates the electrical signal through an interferometer; S2. Loading of detection signals, focusing the irradiated light field to be detected on the photosensitive two-dimensional layered material coating, adjusting the refractive index of the chip integrated waveguide by changing the free carrier concentration and realizing the electro-optical phase modulation of the transmitted light field, and generating a detection signal whose intensity replicates the irradiated signal through structures such as interferometers; S3. Combined transmission of communication signals and detection signals. Polarize the transmission light fields corresponding to the communication signals and detection signals in orthogonal directions. Combined transmission of communication signals and detection signals is achieved through devices such as polarization beam combiners and polarization-insensitive 50%-50% optical beam combiners, thereby realizing integrated processing of communication and detection signals on the same chip and the same link as well as simultaneous implementation of the two functions.
6. The integrated processing method for chip integrated communication detection signals based on a coating structure according to claim 1, characterized in that: The method comprises: Step 1: Prepare the transmission waveguide required for electro-optical modulation and light intensity detection, and optimize the cross-sectional structure; Step 2: non-destructively transfer the two-dimensional layered material coating to the waveguide surface by chemical vapor deposition, and optimize the design of the voltage-sensitive coating thickness; Step 3: Modulate the communication signal and the detection signal on different polarization states respectively, use the polarization division multiplexing method to realize combined transmission and separate demodulation, and complete the integrated processing of the communication detection signal.
7. The integrated processing method for chip integrated communication detection signals based on a coating structure according to claim 6 is characterized in that: The step 1 is to optimize the design so that the transmission loss is low and the waveguide refractive index changes sensitively. The waveguide length for electro-optical modulation needs to be optimized to take into account both low transmission loss and large modulation depth, and the spatial arrangement needs to be optimized to make the coating structure as accurately covered as possible and easy to grow low contact resistance external electrodes.
8. The integrated processing method for chip integrated communication detection signals based on a coating structure according to claim 6, characterized in that: The step 2 is optimized to maximize the free carrier concentration per unit voltage and minimize the dissipation time. The photosensitive coating thickness needs to be optimized to maximize the dynamic range of free carrier concentration per unit light intensity and minimize the switching time. The coating can fit tightly to the upper and side surfaces of the waveguide and only fit to the upper surface. The voltage-sensitive coating material needs to be insensitive to light.
9. A system for implementing the integrated processing method of chip integrated communication detection signals based on the coating structure as described in claims 1-8, comprising a system consisting of a polarization beam splitter, an optical beam splitter and a communication signal processor, and also comprising a communication signal loading module, a sensor signal loading module, a communication signal demodulation module and a sensor signal demodulation module, wherein: The communication signal loading module is used to load the communication signal onto the voltage-sensitive two-dimensional layered material coating through an external electrode, adjust the refractive index of the chip integrated waveguide by changing the free carrier concentration and realize the electro-optical phase modulation of the transmission light field, and generate an all-optical communication signal whose intensity replicates the electrical signal through an interferometer; The detection signal loading module is used to focus the irradiated light field to be detected on the photosensitive two-dimensional layered material coating, adjust the refractive index of the chip integrated waveguide by changing the free carrier concentration and realize the electro-optical phase modulation of the transmitted light field, and generate a detection signal whose intensity replicates the irradiated signal through structures such as interferometers; The communication signal and detection signal combined transmission module is used to polarize the transmission light fields corresponding to the communication signal and the detection signal in orthogonal directions, and combine and transmit the communication signal and the detection signal through devices such as polarization beam combiners and polarization-insensitive 50%-50% optical beam combiners, so as to realize the integrated processing of communication and detection signals on the same chip and the same link and the simultaneous implementation of the two functions.
10. A computer-readable storage medium having a computer program stored thereon, wherein the program, when executed by a processor, implements the method according to any one of claims 1 to 8.
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