Light-emitting device and display panel

Abstract

The application discloses a light-emitting device and a display panel. The light-emitting device comprises an anode layer, a first light-emitting unit, an n-type charge generation layer, a silver film-electron transport material coordination layer, a silver film layer, a silver film-hole injection material coordination layer, a p-type charge generation layer, a second light-emitting unit and a cathode layer which are sequentially stacked. By arranging the silver film-electron transport material coordination layer and the silver film-hole injection material coordination layer on the two sides of the silver film layer, the silver aggregation is inhibited, most of the silver film layer is nano silver particles, the injection barrier of electrons is reduced, the performance of the light-emitting device is improved, the short circuit caused by silver migration is avoided, and the stability of the light-emitting device is improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of display, in particular to a light-emitting device and a display panel. BACKGROUND

[0002] Tandem OLED is usually used to connect two light-emitting units or multiple organic light-emitting units in series through a charge generation layer (CGL) to achieve multiple or several times of current efficiency and luminous brightness.

[0003] When the electron injection capability of a light-emitting unit in a double-stacked device is insufficient, a thin layer of silver can be inserted between the p-CGL and the n-CGL to improve the electron injection capability by using local surface plasmon resonance (LSPR). However, silver is prone to aggregation to form large-size particles in the film forming process, which is not conducive to improving the electron injection capability; in addition, the migration of silver will reduce the light-emitting performance of the device. SUMMARY

[0004] The light-emitting device and the display panel provided by the present application solve the problem that the thin layer of silver inserted between the p-CGL and the n-CGL is prone to aggregation to form large-size particles in the film forming process in the prior art.

[0005] To solve the above technical problems, the first technical solution provided by the present application is to provide a light-emitting device, comprising an anode layer, a first light-emitting unit, an n-type charge generation layer, a silver film-electron transport material coordination layer, a silver film layer, a silver film-hole injection material coordination layer, a p-type charge generation layer, a second light-emitting unit, and a cathode layer, which are sequentially stacked.

[0006] In an embodiment, the light-emitting device is a bottom-emitting device, and the refractive index of the electron transport material in the silver film-electron transport material coordination layer is greater than the refractive index of silver in the silver film layer.

[0007] In an embodiment, the light-emitting device is a top-emitting device, and the refractive index of the hole injection material in the silver film-hole injection material coordination layer is greater than the refractive index of silver in the silver film layer.

[0008] In an embodiment, the electron transport material in the silver film-electron transport material coordination layer comprises phenanthroline and derivatives thereof.

[0009] In an embodiment, the hole injection material in the silver film-hole injection material coordination layer comprises HAT-CN.

[0010] In an embodiment, the thickness of the silver film-electron transport material coordination layer is 0.5-2 nm.

[0011] In an embodiment, the thickness of the silver film-hollow injection material coordination layer is 0.5-5 nm.

[0012] In an embodiment, the thickness of the silver film layer is 0.5-5 nm. The silver film layer is composed of uniform nano silver particles.

[0013] In an embodiment, the work function of the silver film layer is between the highest occupied orbital energy of the p-type charge generation layer and the lowest unoccupied orbital energy of the n-type charge generation layer, so as to facilitate the injection of electrons generated by the p-type charge generation layer into the first light emitting unit.

[0014] To solve the above technical problems, the second technical solution provided by the present application is to provide a display panel comprising the light emitting device and a substrate and a cover plate, wherein the substrate and the cover plate are respectively located on two sides of the light emitting device.

[0015] The present application has the following advantages: Different from the prior art, the present application discloses a light emitting device and a display panel, wherein the light emitting device comprises an anode layer, a first light emitting unit, an n-type charge generation layer, a silver film-electron transmission material coordination layer, a silver film layer, a silver film-hollow injection material coordination layer, a p-type charge generation layer, a second light emitting unit, and a cathode layer, which are sequentially stacked. By arranging the silver film-electron transmission material coordination layer and the silver film-hollow injection material coordination layer on two sides of the silver film layer, respectively, the silver aggregation is inhibited, so that the silver film layer is mostly composed of nano silver particles, which is conducive to reducing the injection barrier of electrons and improving the performance of the light emitting device. At the same time, the short circuit caused by silver migration is avoided, and the stability of the light emitting device is improved. BRIEF DESCRIPTION OF DRAWINGS

[0016] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed in the embodiment description will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative labor.

[0017] Figure 1 is a structural schematic diagram of the light emitting device provided by the first embodiment of the present application;

[0018] Figure 2 is a structural schematic diagram of the light emitting device provided by the second embodiment of the present application;

[0019] Figure 3 is a structural schematic diagram of the display panel provided by the embodiment of the present application. DETAILED DESCRIPTION

[0020] With reference to the drawings, the technical solutions in the embodiments of the present application will be clearly and completely described below. Obviously, the described embodiments are only a part of the embodiments of the present application, but not all the embodiments of the present application. Based on the embodiments in the present application, all the other embodiments obtained by a person of ordinary skill in the art without creative effort are within the protection scope of the present application.

[0021] In the following description, specific details are set forth in connection with the present application, such as specific system structures, interfaces, techniques, etc., in order to provide a thorough understanding of the present application. However, persons of ordinary skill in the art will appreciate that the present application is not limited to the details described.

[0022] The terms "first", "second", "third" in the present application are only for descriptive purpose, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the technical features indicated. Therefore, the features defined with "first", "second", "third" can explicitly or implicitly include at least one of the features. In the description of the present application, the meaning of "multiple" is at least two, such as two, three, etc., unless otherwise explicitly and specifically limited. All directional indications (such as up, down, left, right, front, back, etc.) in the embodiments of the present application are only used to explain the relative position relationship, movement condition, etc. between components in a certain specific posture (as shown in the drawings), and if the specific posture changes, the directional indications also change accordingly. The terms "include" and "have" and any variations thereof in the embodiments of the present application are intended to cover non-exclusive inclusion. For example, a process, method, system, product or device including a series of steps or units is not limited to the listed steps or units, but can optionally include steps or units not listed, or can optionally include other steps or components inherent to the process, method, product or device.

[0023] Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment is included in at least one embodiment of the application. The appearances of the phrase that the phrase in the specification do not necessarily all refer to the same embodiment, or necessarily refer to different or alternative embodiments. It is explicitly and implicitly understood that the embodiments described herein can be combined with each other.

[0024] The present application will be described in detail below with reference to the drawings and embodiments.

[0025] In an OLED (Organic Light-Emitting Diode) device, if only a single-layer device is used, to achieve high brightness, the driving current will be too large to cause a surge in heat, affecting the performance and life of the device. Compared with a single-layer device, a double-layer device has a current density of about 1 / 2 of the single-layer device to achieve the same brightness, and theoretically its life is doubled.

[0026] The double-layer device includes two light-emitting units, which are usually connected in series by a charge generation layer (CGL) to achieve a multiple or several times of current efficiency and luminous intensity. The CGL includes a p-CGL and an n-CGL, which are usually doped to improve the ability of generating carriers, improve the carrier balance ability of the two light-emitting units, reduce the device voltage, and improve the device efficiency. In order to improve the electron injection and transport ability, a silver thin layer is inserted between the p-CGL and the n-CGL to reduce the electron injection barrier. Specifically, the silver thin layer forms nanoparticles (NPs), and the surface plasmon resonance (LSPR) is used to improve the electron injection ability. However, the silver film is easy to aggregate and form large-size particles, which reduces the localized surface plasmon resonance (LSPR) and reduces the electron injection ability. In addition, silver migration can damage the corresponding functional layer material and cause short circuit.

[0027] In view of this, the present application provides a new light-emitting device and electronic equipment to solve the above problems.

[0028] Please refer to Figure 1 , Figure 1 is a structural schematic diagram of a light-emitting device provided by the first embodiment of the present application.

[0029] In the embodiment, the light-emitting device is a bottom emission. The light-emitting device includes an anode layer 11, a first light-emitting unit 12, an n-type charge generation layer 13, a silver film-electron transport material coordination layer 14, a silver film layer 15, a silver film-hole injection material coordination layer 16, a p-type charge generation layer 17, a second light-emitting unit 18, and a cathode layer 19, which are sequentially stacked.

[0030] The electron transport material in the silver film-electron transport material coordination layer 14 and the hole injection material in the silver film-hole injection material coordination layer 16 are both materials with lone pair electrons and steric hindrance size that does not affect coordination with silver.

[0031] By making the electron transport material in the silver film-electron transport material coordination layer 14 and the hole injection material in the silver film-hole injection material coordination layer 16 have lone pair electrons, there is a possibility of coordination with silver; the steric hindrance of the electron transport material in the silver film-electron transport material coordination layer 14 and the hole injection material in the silver film-hole injection material coordination layer 16 is not large, so that it can coordinate with silver, inhibit the aggregation of silver during film formation, and make the silver in the silver film layer 15 remain as nano silver particles, which is conducive to improving the electron injection capability of the first light emitting unit 12 by using the surface plasmon resonance (LSPR) of the silver, and further improving the performance of the light emitting device.

[0032] Since silver migrates, by arranging the silver film-electron transport material coordination layer 14 and the silver film-hole injection material coordination layer 16 on the two sides of the silver film layer 15, even if silver migrates in the longitudinal direction, the silver will coordinate with the electron transport material in the silver film-electron transport material coordination layer 14 and the hole injection material in the silver film-hole injection material coordination layer 16, which can effectively inhibit the longitudinal movement of silver, i.e., effectively inhibit the migration of silver to the first light emitting unit 12 and the second light emitting unit 18, and avoid the failure of the corresponding functional layer due to the migration of silver; at the same time, it avoids the short circuit caused by the migration of silver, and improves the stability of the light emitting device. In addition, the quenching of the luminescent exciton by silver can be effectively inhibited. At the same time, the silver film-electron transport material coordination layer 14, the silver film layer 15, and the silver film-hole injection material coordination layer 16 between the n-type charge generation layer 13 and the p-type charge generation layer 17 can also block the interaction between the n-type charge generation layer 13 and the p-type charge generation layer 17, further improving the stability of the light emitting device.

[0033] In addition, since the light emitting device of the embodiment is bottom emission, silver has good reflection ability and low transmittance, which reduces the light extraction of the first light emitting unit 12 from the cathode layer 19 side.

[0034] Optionally, the refractive index of the electron transport material in the silver film-electron transport material coordination layer 14 is greater than the refractive index of the silver in the silver film layer 15. Since the light emitting device of the embodiment is bottom emission, the light emitted from the silver film layer 15 to the silver film-electron transport material coordination layer 14 is deflected to the direction close to the normal by using the high refractive index of the silver film-electron transport material coordination layer 14, which can well extract the light of the second light emitting unit 18, and is conducive to improving the light emitting efficiency of the light emitting device.

[0035] Optionally, the refractive index of the hole injection material in the silver film-hole injection material coordination layer 16 is less than the refractive index of silver in the silver film layer 15. Since the light-emitting device of the present embodiment is bottom emission, the light rays emitted from the silver film-hole injection material coordination layer 16 to the silver film layer 15 are deflected towards the direction close to the normal, which can well extract the light of the second light-emitting unit 18 and improve the light-emitting efficiency of the light-emitting device. Further, in combination with the fact that the refractive index of the electron transport material in the silver film-electron transport material coordination layer 14 is greater than the refractive index of silver in the silver film layer 15, the light-emitting efficiency of the light-emitting device is improved.

[0036] Optionally, the refractive index of the hole injection material in the silver film-hole injection material coordination layer 16 is slightly greater than the refractive index of silver in the silver film layer 15. Since the light-emitting device of the present embodiment is bottom emission, the light rays emitted from the silver film-hole injection material coordination layer 16 to the silver film layer 15 are slightly deflected away from the normal; further, in combination with the fact that the refractive index of the electron transport material in the silver film-electron transport material coordination layer 14 is greater than the refractive index of silver in the silver film layer 15, the light rays are deflected towards the direction close to the normal, and the light rays of the second light-emitting unit 18 are deflected twice through the silver film-hole injection material coordination layer 16, the silver film layer 15 and the silver film-electron transport material coordination layer 14, and the light extraction on the anode layer 11 side can meet the requirements of the light-emitting efficiency of the light-emitting device.

[0037] It should be noted that the refractive index of the hole injection material in the silver film-hole injection material coordination layer 16, the refractive index of silver in the silver film layer 15 and the refractive index of the electron transport material in the silver film-electron transport material coordination layer 14 are cooperatively arranged, and the light extraction of the second light-emitting unit 18 from the anode layer 11 side can meet the requirements of the light-emitting efficiency of the light-emitting device.

[0038] Optionally, the material of the silver film-electron transport material coordination layer 14 is phenanthroline and its derivatives. For example, the structural formula of the material of the silver film-electron transport material coordination layer 14, i.e., the coordination of the electron transport material and silver in the silver film-electron transport material coordination layer 14 is as follows:

[0039]

[0040] In the above formula, “N” in the electron transport material in the silver film-electron transport material coordination layer 14 has a lone pair of electrons, and the position of -N has a small steric hindrance for coordination with Ag, so that silver can be more easily coordinated therewith. It should be noted that the electron transport material in the silver film-electron transport material coordination layer 14 is not doped.

[0041] Optionally, the thickness of the silver film-electron transport material coordination layer 14 is 1-10 nm. When the thickness of the silver film-electron transport material coordination layer 14 is less than 1 nm, the light extraction of the second light-emitting unit 18 from the anode layer 11 side cannot meet the requirements of the light-emitting efficiency of the light-emitting device. The silver film-electron transport material coordination layer 14 has a small molecular weight, which is insufficient to coordinate the silver in the silver film layer 15, and cannot keep the silver as nanoparticles, which is not conducive to improving the electron injection capability of the first light emitting unit 12. When the thickness of the silver film-electron transport material coordination layer 14 is greater than 1 nm, the resistance is increased, and the electrons cannot tunnel, which reduces the performance of the device. In an embodiment, the thickness of the silver film-electron transport material coordination layer 14 is 0.5-1 nm. The silver film-electron transport material coordination layer 14 has a small molecular weight, which is insufficient to coordinate the silver in the silver film layer 15, and cannot keep the silver as nanoparticles, which is not conducive to improving the electron injection capability of the first light emitting unit 12. When the thickness of the silver film-electron transport material coordination layer 14 is greater than 1 nm, the resistance is increased, and the electrons cannot tunnel, which reduces the performance of the device. In an embodiment, the thickness of the silver film-electron transport material coordination layer 14 is 0.5-1 nm. The silver film-electron transport material coordination layer 14 has a small molecular weight, which is insufficient to coordinate the silver in the silver film layer 15, and cannot keep the silver as nanoparticles, which is not conducive to improving the electron injection capability of the first light emitting unit 12. When the thickness of the silver film-electron transport material coordination layer 14 is greater than 1 nm, the resistance is increased, and the electrons cannot tunnel, which reduces the performance of the device. In an embodiment, the thickness of the silver film-electron transport material coordination layer 14 is 0.5-1 nm.

[0042] The hole injection material in the silver film-hole injection material coordination layer 16 is HAT-CN (i.e. Dipyrazino[2,3-f:2',3'-h]quinoxaline-2,3,6,7,10,11-hexacarbonitrile). The structure of the material in the silver film-hole injection material coordination layer 16, i.e. the coordination between the hole injection material in the silver film-hole injection material coordination layer 16 and silver, is as follows:

[0043]

[0044] The "N" in the hole injection material in the silver film-hole injection material coordination layer 16 has a lone pair of electrons and a small steric hindrance, and the "N" in "-CN" also has a lone pair of electrons, and there is enough space around "-CN", i.e. the steric hindrance is small, so silver can easily coordinate with it. It should be noted that the hole injection material in the silver film-hole injection material coordination layer 16 is not doped.

[0045] The thickness of the silver film-hole injection material coordination layer 16 is 0.5-1 nm. When the thickness of the silver film-hole injection material coordination layer 16 is less than 0.5 nm, the silver film layer 15 cannot be kept as uniform nanoparticles, which is not conducive to improving the electron injection capability. The silver film-hole injection material coordination layer 16 has a small molecular weight, which is insufficient to coordinate the silver in the silver film layer 15, and cannot keep the silver as nanoparticles, which is not conducive to improving the electron injection capability. When the thickness of the silver film-hole injection material coordination layer 16 is greater than 1 nm, the resistance is increased, and the holes cannot tunnel, which reduces the performance of the device. In an embodiment, the thickness of the silver film-hole injection material coordination layer 16 is 0.5-1 nm. The silver film-hole injection material coordination layer 16 has a small molecular weight, which is insufficient to coordinate the silver in the silver film layer 15, and cannot keep the silver as nanoparticles, which is not conducive to improving the electron injection capability. When the thickness of the silver film-hole injection material coordination layer 16 is greater than 1 nm, the resistance is increased, and the holes cannot tunnel, which reduces the performance of the device. In an embodiment, the thickness of the silver film-hole injection material coordination layer 16 is 0.5-1 nm. The silver film-hole injection material coordination layer 16 has a small molecular weight, which is insufficient to coordinate the silver in the silver film layer 15, and cannot keep the silver as nanoparticles, which is not conducive to improving the electron injection capability. When the thickness of the silver film-hole injection material coordination layer 16 is greater than 1 nm, the resistance is increased, and the holes cannot tunnel, which reduces the performance of the device. In an embodiment, the thickness of the silver film-hole injection material coordination layer 16 is 0.5-1 nm.

[0046] The work function of the silver film layer 15 is between the highest occupied orbital energy (HOMO) of the p-type charge generation layer 17 and the lowest unoccupied orbital energy (LUMO) of the n-type charge generation layer 13, so as to reduce the injection barrier of the electrons, facilitate the injection of the electrons generated by the p-type charge generation layer into the first light emitting unit 12, thereby reducing the driving voltage and improving the device efficiency.

[0047] Optionally, the thickness of the silver film layer 15 is 5-50nm. The silver film layer 15 is composed of uniform nano silver particles. Since the silver is coordinated with the electron transport material in the silver film-electron transport material coordination layer 14 and the hole injection material in the silver film-hole injection material coordination layer 16, the silver can keep its size as nano particles, so the silver film layer 15 after film formation is composed of nano silver particles. In an embodiment, the thickness of the silver film layer 15 is 5-50nm.

[0048] Continuing to refer to Figure 1 A first hole blocking layer 21 and a first electron transport layer 22 are arranged between the first light emitting unit 12 and the n-type charge generation layer 13, and the first electron transport layer 22 is arranged on the side of the first hole blocking layer 21 close to the n-type charge generation layer 13. A first hole transport layer 23 and a first electron blocking layer 24 are arranged between the p-type charge generation layer 17 and the second light emitting unit 18, and the first electron blocking layer 24 is arranged on the side of the first hole transport layer 23 close to the second light emitting unit 18.

[0049] Optionally, the material of the first hole blocking layer 21 is MCP (i.e. 9,9'-(1,3-phenyl) di-9H-carbazole), CBP (i.e. 4,4'-Bis(9H-carbazol-9-yl)biphenyl, 4,4'-di(9-carbazole) biphenyl). The material of the first electron blocking layer 24 is TAPC (i.e. 4,4'- cyclohexylidenebis[N,N-bis(p-tolyl)aniline], 4,4'-cyclohexylidenebis[N,N-bis(4-methylphenyl) aniline).

[0050] A hole injection layer 25, a second hole transport layer 26 and a second electron blocking layer 27 are arranged between the anode layer 11 and the first light emitting unit 12, the second hole transport layer 26 is arranged on the side of the hole injection layer 25 close to the first light emitting unit 12, and the second electron blocking layer 27 is arranged on the side of the second hole transport layer 26 close to the first light emitting unit 12. An electron injection layer 28, a second electron transport layer 29 and a second hole blocking layer 30 are arranged between the cathode layer 19 and the second light emitting unit 18, the second hole blocking layer 30 is arranged on the side of the second electron transport layer 29 close to the second light emitting unit 18, and the electron injection layer 28 is arranged on the side of the second electron transport layer 29 away from the second light emitting unit 18.

[0051] The first hole blocking layer 21, the first electron transport layer 22, the first hole transport layer 23, the first electron blocking layer 24, the hole injection layer 25, the second hole transport layer 26, the second electron blocking layer 27, the electron injection layer 28, the second electron transport layer 29 and the second hole blocking layer 30 have the same functions as those in the prior art, and will not be described here.

[0052] Referring to Figure 2 , Figure 2 is a structural schematic diagram of a light emitting device provided by the second embodiment of the present application.

[0053] Figure 2 The light emitting device shown in the figure is different from the light emitting device shown in the figure in that: Figure 1 The light emitting device shown in the figure is a bottom emission, Figure 1 The light emitting device shown in the figure is a top emission. Figure 2 The light emitting device shown in the figure is a top emission.

[0054] In the embodiment, the light emitting device is a top emission. The light emitting device comprises, in sequence, an anode layer 11, a first light emitting unit 12, an n-type charge generation layer 13, a silver film-electron transport material coordination layer 14, a silver film layer 15, a silver film-hole injection material coordination layer 16, a p-type charge generation layer 17, a second light emitting unit 18, a cathode layer 19, and a light extraction layer 31.

[0055] Since the light emitting device of the embodiment is a top emission, the light extraction layer 31 with a large refractive index and a small light absorption coefficient is provided on the side of the transparent cathode layer 19, which is conducive to light extraction and improves the light emitting efficiency. Moreover, silver has good reflection ability, which reduces the extraction of light from the second light emitting layer 18 on the side of the anode layer 11, is conducive to improving the light extraction of the second light emitting layer 18, and further improves the light emitting efficiency.

[0056] The electron transport material in the silver film-electron transport material coordination layer 14 and the hole injection material in the silver film-hole injection material coordination layer 16 are both materials with lone pair electrons and steric hindrance that does not affect coordination with silver.

[0057] By making the electron transport material in the silver film-electron transport material coordination layer 14 and the hole injection material in the silver film-hole injection material coordination layer 16 have lone pair electrons, it is possible for them to coordinate with silver; the steric hindrance of the electron transport material in the silver film-electron transport material coordination layer 14 and the hole injection material in the silver film-hole injection material coordination layer 16 is not large, so that they can coordinate with silver, inhibit the aggregation of silver during film formation, and make the silver in the silver film layer 15 remain as nano silver particles, which is conducive to improving the electron injection ability of the first light emitting unit 12 by utilizing the surface plasmon resonance (LSPR) of the silver, and further improving the performance of the light emitting device.

[0058] Since silver migrates, by arranging the silver film-electron transport material coordination layer 14 and the silver film-hole injection material coordination layer 16 on the two sides of the silver film layer 15 respectively, even if silver migrates in the vertical direction, silver will coordinate with the electron transport material in the silver film-electron transport material coordination layer 14 and the hole injection material in the silver film-hole injection material coordination layer 16, and the movement of silver in the vertical direction can be effectively inhibited, that is, the migration of silver to the first light emitting unit 12 and the second light emitting unit 18 can be effectively inhibited, and the failure of the corresponding functional layer caused by the migration of silver can be avoided; at the same time, the short circuit caused by the migration of silver is avoided, and the stability of the light emitting device is improved. In addition, the quenching of luminescent excitons by silver can be effectively inhibited. At the same time, the silver film-electron transport material coordination layer 14, the silver film layer 15, and the silver film-hole injection material coordination layer 16 between the n-type charge generation layer 13 and the p-type charge generation layer 17 can also block the interaction between the n-type charge generation layer 13 and the p-type charge generation layer 17, further improving the stability of the light emitting device.

[0059] Optionally, the refractive index of the hole injection material in the silver film-hole injection material coordination layer 16 is greater than the refractive index of silver in the silver film layer 15. Since the light emitting device of the embodiment is top emission, the light emitted from the silver film layer 15 to the silver film-hole injection material coordination layer 16 is deflected to the direction close to the normal line by using the higher refractive index of the silver film-hole injection material coordination layer 16, which can well extract the light of the first light emitting unit 12, and is beneficial to improve the light emitting efficiency of the light emitting device.

[0060] Optionally, the refractive index of the electron transport material in the silver film-electron transport material coordination layer 14 is less than the refractive index of silver in the silver film layer 15. Since the light emitting device of the embodiment is top emission, the light emitted from the silver film-electron transport material coordination layer 14 to the silver film layer 15 is deflected to the direction close to the normal line, which can well extract the light of the first light emitting unit 12, and is beneficial to improve the light emitting efficiency of the light emitting device. Further, in combination with the refractive index of the hole injection material in the silver film-hole injection material coordination layer 16 being greater than the refractive index of silver in the silver film layer 15, the light emitting efficiency of the light emitting device is improved.

[0061] Optionally, the refractive index of the electron transport material in the silver film-electron transport material coordination layer 14 is slightly greater than the refractive index of silver in the silver film layer 15. Since the light emitting device of the embodiment is top emission, the light emitted from the silver film-electron transport material coordination layer 14 to the silver film layer 15 is slightly deflected to the direction away from the normal line; further, in combination with the refractive index of the hole injection material in the silver film-hole injection material coordination layer 16 being greater than the refractive index of silver in the silver film layer 15, the light is deflected to the direction close to the normal line, and the light emitted from the first light emitting unit 12 is deflected twice through the silver film-electron transport material coordination layer 14, the silver film layer 15, and the silver film-hole injection material coordination layer 16, and the light emitted on the cathode layer 19 side can meet the requirements of the light emitting efficiency of the light emitting device.

[0062] It should be noted that the refractive index of the hole injection material in the silver film-hole injection material coordination layer 16, the refractive index of silver in the silver film layer 15, and the refractive index of the electron transport material in the silver film-electron transport material coordination layer 14 are set in a coordinated manner so that the light emitted from the first light-emitting unit 12 from the cathode layer 19 side can meet the requirements of the light-emitting device's luminous efficiency.

[0063] In this embodiment, the material and thickness of the silver film layer 15, the material and thickness of the silver film-electron transport material coordination layer 14, and the material and thickness of the silver film-hole injection material coordination layer 16 can be referred to the description in the first embodiment of the light-emitting device, and the same technical effect can be achieved, so it will not be described again.

[0064] Please see Figure 3 , Figure 3 This is a schematic diagram of the structure of the display panel provided in the embodiment of this application.

[0065] The display panel includes the light-emitting device provided in any of the above embodiments. Figure 3 Taking the first embodiment of the light-emitting device as an example, it also includes a substrate 41, a cover plate 42, and an encapsulating material 43. The substrate 41 and the cover plate 42 are located on opposite sides of the light-emitting device, with the substrate 41 located on the anode layer 11 side and the cover plate 42 located on the cathode layer 19 side. The encapsulating material 43 is used to encapsulate the space formed between the substrate 41 and the cover plate 42. Both the substrate 41 and the cover plate 42 are made of transparent materials. The function, material, and structure of the substrate 41 and the cover plate 42 are the same as in the prior art and will not be described again.

[0066] This application also provides an electronic device that includes the aforementioned display panel, which helps improve the quality of the electronic device. The electronic device can be a desktop computer, laptop computer, personal digital assistant (PDA), mobile phone, television, etc.

[0067] The above are merely embodiments of this application and do not limit the scope of this patent application. Any equivalent structural or procedural changes made using the content of this application's specification and drawings, or direct or indirect applications in other related technical fields, are similarly included within the scope of patent protection of this application.

Claims

1. A light-emitting device, characterized in that, include: The following components are sequentially stacked: an anode layer, a first light-emitting unit, an n-type charge-generating layer, a silver film-electron transport material coordination layer, a silver film layer, a silver film-hole injection material coordination layer, a p-type charge-generating layer, a second light-emitting unit, and a cathode layer. The silver film layer is composed of uniform silver nanoparticles. The silver film-electron transport material coordination layer includes an electron transport material that coordinates with the silver in the silver film layer. The silver film-hole injection material coordination layer includes a hole injection material that coordinates with the silver in the silver film layer.

2. The light-emitting device according to claim 1, characterized in that, The light-emitting device is a bottom-emitting device, and the refractive index of the electron transport material in the silver film-electron transport material coordination layer is greater than the refractive index of silver in the silver film layer.

3. The light-emitting device according to claim 1, characterized in that, The light-emitting device is a top-emitting device, and the refractive index of the hole injection material in the silver film-hole injection material coordination layer is greater than the refractive index of silver in the silver film layer.

4. The light-emitting device according to claim 1, characterized in that, The electron transport material in the silver film-electron transport material coordination layer includes phenanthroline and its derivatives.

5. The light-emitting device according to claim 1, characterized in that, The hole injection material in the silver film-hole injection material coordination layer includes HAT-CN.

6. The light-emitting device according to claim 1, characterized in that, The thickness of the silver film-electron transport material coordination layer is 10 Å-100 Å.

7. The light-emitting device according to claim 1, characterized in that, The thickness of the silver film-hole injection material coordination layer is 10 Å-100 Å.

8. The light-emitting device according to claim 1, characterized in that, The thickness of the silver film is 5 Å-40 Å.

9. The light-emitting device according to claim 1, characterized in that, The work function of the silver film layer is between the highest occupied orbital energy of the p-type charge generation layer and the lowest unoccupied orbital energy of the n-type charge generation layer, so as to facilitate the injection of electrons generated by the p-type charge generation layer into the first light-emitting unit.

10. A display panel, characterized in that, It includes the light-emitting device as described in any one of claims 1-9, as well as a substrate and a cover plate, wherein the substrate and the cover plate are respectively located on both sides of the light-emitting device.

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