Micro light-emitting component and micro light-emitting component display device

Abstract

The present invention provides a micro light-emitting component, comprising an epitaxial structure, an insulating layer, an electrode structure and a sacrificial layer. The epitaxial structure includes a top surface and a side surface. The insulating layer is disposed on the top surface and the side surface of the epitaxial structure, and the insulating layer includes an opening. The electrode structure is disposed on the top surface of the epitaxial structure and passes through the opening of the insulating layer to be electrically connected to the epitaxial structure. The sacrificial layer is sandwiched between the surface of the insulating layer and the corresponding electrode structure. The present invention provides a micro light-emitting component, for which the circuit board to be paired does not need to be provided with replacement pads, and when removed from the circuit board, the pads on the circuit board are not easily damaged. The present invention further mentions a micro light-emitting component display device.

Description

Technical Field

[0001] The present invention relates to a light-emitting component and a display device, and particularly to a micro light-emitting component and a micro light-emitting component display device. Background Art

[0002] Currently, if a micro light-emitting component on a circuit board is damaged and needs to be reworked, during the process of removing the micro light-emitting component, the corresponding pads on the circuit board are damaged greatly. Subsequently, if a new micro light-emitting component (used to replace the damaged one) is to be bonded to this pad, poor bonding is likely to occur.

[0003] To avoid this situation, some circuit boards are designed with dedicated pads reserved for bonding new micro light-emitting components. However, in this case, in addition to the spare pads provided for the initial connection of the micro light-emitting components on the circuit board, space also needs to be reserved for the spare pads that will only be used when replacement is needed, which affects the circuit layout on the circuit board. Summary of the Invention

[0004] The present invention provides a micro light-emitting component, and the circuit board it is paired with does not need to be provided with replacement pads, and when removed from the circuit board, the pads on the circuit board are not easily damaged.

[0005] The present invention provides a micro light-emitting component display device, and its circuit board does not need to be provided with replacement pads, and when the micro light-emitting component is removed from the circuit board, the pads on the circuit board are not easily damaged.

[0006] A micro light-emitting component of the present invention includes an epitaxial structure, an insulating layer, an electrode structure, and a sacrificial layer. The epitaxial structure includes a top surface and a side surface. The insulating layer is disposed on the top surface and the side surface of the epitaxial structure, and the insulating layer includes an opening. The electrode structure is disposed on the top surface of the epitaxial structure and passes through the opening of the insulating layer to be electrically connected to the epitaxial structure. The sacrificial layer is sandwiched between the surface of the insulating layer and the corresponding electrode structure.

[0007] A micro light-emitting component display device of the present invention includes a display backplane and a plurality of micro light-emitting components. The display backplane includes a plurality of backplane pads. These micro light-emitting components are disposed on the display backplane, and each micro light-emitting component includes an epitaxial structure, an insulating layer, and an electrode structure. The epitaxial structure includes a top surface and a side surface. The insulating layer is disposed on the top surface and the side surface of the epitaxial structure, and the insulating layer includes an opening. The electrode structure is disposed on the top surface of the epitaxial structure and passes through the opening of the insulating layer to be electrically connected to the epitaxial structure and connected to at least one of these backplane pads, wherein there is a gap between the electrode structure and the surface of the insulating layer.

[0008] Based on the above, the electrode structure of the micro-light emitting component of the present invention is disposed on the top surface of the epitaxial structure and passes through the opening of the insulating layer to be electrically connected to the epitaxial structure. The sacrificial layer is sandwiched between the surface of the insulating layer and the corresponding electrode structure. That is to say, a part of the electrode structure (electrode pad) is separated from the surface of the insulating layer by the sacrificial layer, and another part of the electrode structure is connected to the above part and passes through the opening of the insulating layer to be connected to the epitaxial structure (electrode post). When the micro-light emitting component is to be removed from the backplane pad of the display backplane (or other circuit board), as long as the sacrificial layer is removed first, the connection strength between the insulating layer and the above part of the electrode structure is reduced, and it is easier to break from a part of the electrode structure, here, for example, the part of the electrode post, so that the epitaxial structure together with the insulating layer can be removed from the backplane pad of the display backplane. Since the fracture position of the electrode structure will be in another part of the electrode structure, rather than the above part of the backplane pad of the display backplane, after the epitaxial structure together with the insulating layer is removed from the backplane pad of the display backplane, the backplane pad and the connected circuit itself will not be pulled and damaged, and can be used for connecting a new micro-light emitting component again. Therefore, there is no need to set up spare pads on the display backplane (or other circuit boards), and the circuit layout on the display backplane (or other circuit boards) can be more flexible and elastic. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] Figure 1A FIG. is a cross-sectional schematic view of a micro-light emitting component connected to a display backplane according to an embodiment of the present invention;

[0010] Figure 1B is to Figure 1A The cross-sectional schematic view of the micro-light emitting component removed from the display backplane;

[0011] Figure 1C is another Figure 1A The cross-sectional schematic view of the micro-light emitting component connected to the display backplane;

[0012] Figure 2 FIG. is a cross-sectional schematic view of a micro-light emitting component according to another embodiment of the present invention;

[0013] Figure 3A FIG. is a cross-sectional schematic view of a micro-light emitting component according to another embodiment of the present invention;

[0014] Figure 3B is Figure 3A The top view schematic diagram of the micro-light emitting component;

[0015] Figure 4 FIG. is a cross-sectional schematic view of a micro-light emitting component according to another embodiment of the present invention;

[0016] Figure 5is a cross-sectional schematic view of a micro light-emitting component according to another embodiment of the present invention;

[0017] Figure 6 is a cross-sectional schematic view of a micro light-emitting component according to another embodiment of the present invention;

[0018] Figure 7 is a cross-sectional schematic view of a micro light-emitting component connected to a display backplane according to another embodiment of the present invention;

[0019] Figure 8A is a cross-sectional schematic view of an electrode structure and a backplane pad before a reflow process according to an embodiment of the present invention;

[0020] Figure 8B is Figure 8A a cross-sectional schematic view of the electrode structure and the backplane pad after the reflow process;

[0021] Figure 8C is a cross-sectional schematic view of a new electrode structure to be connected to a residual electrode structure and a backplane pad;

[0022] Figure 9 is a cross-sectional schematic view of a micro light-emitting component according to another embodiment of the present invention;

[0023] Figure 10 is a cross-sectional schematic view of a micro light-emitting component display device according to an embodiment of the present invention;

[0024] Figure 11 is a cross-sectional schematic view of a micro light-emitting component display device according to another embodiment of the present invention.

[0025] Description of Reference Numerals

[0026] B: Substrate;

[0027] D1: First direction;

[0028] D2: Second direction;

[0029] D3: Third direction;

[0030] H1: First height;

[0031] H2: Second height;

[0032] M: Platform;

[0033] 10: Micro light-emitting component display device;

[0034] 20: Display backplane;

[0035] 22, 23: Backplane pads;

[0036] 30, 30g, 31, 32: Residual electrode structure;

[0037] 32: Eutectic layer;

[0038] 34: Barrier layer;

[0039] 36: Bonding layer;

[0040] 100, 100a, 100b, 100c, 100d, 100e, 100f, 100g, 100h, 100i: Micro light-emitting component;

[0041] 110, 110a: Epitaxial structure;

[0042] 111: Top surface;

[0043] 112: Side surface;

[0044] 113: First semiconductor layer;

[0045] 114: Second semiconductor layer;

[0046] 114a: First part;

[0047] 114b: Second part;

[0048] 115: Light-emitting layer;

[0049] 120: Insulating layer;

[0050] 120a: First opening;

[0051] 120b: Second opening;

[0052] 122: Opening;

[0053] 124: Surface;

[0054] 130, 130g, 130h: Electrode structure;

[0055] 131, 131b, 131d: First electrode post;

[0056] 132, 132b, 132d: Second electrode post;

[0057] 133, 134: Inner side surface;

[0058] 135, 136: Outer side surface;

[0059] 137, 137e: First segment part;

[0060] 138, 138e: Second segment part;

[0061] 139: Electrode post;

[0062] 140, 140g: First electrode pad;

[0063] 141: Second electrode pad;

[0064] 142: First bonding layer;

[0065] 142g: Solder layer;

[0066] 143: Barrier layer;

[0067] 144: Second bonding layer;

[0068] 146: Solder layer;

[0069] 147: Eutectic layer;

[0070] 148, 149: Electrode pads;

[0071] 150: Sacrificial layer;

[0072] 152, 152c: Sacrificial blocks;

[0073] 160: Gap. Detailed implementation manners

[0074] Reference will now be made in detail to exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same component symbols are used in the drawings and the description to represent the same or similar parts.

[0075] Figure 1A is a cross-sectional schematic view of a micro light-emitting component connected to a display backplane according to an embodiment of the present invention. It should be noted that in Figure 1A , the micro light-emitting component 100 is turned upside down by 180 degrees and disposed on the display backplane 20 in a flip-chip manner. Please refer to Figure 1A . In this embodiment, the micro light-emitting component 100 includes an epitaxial structure 110, an insulating layer 120, an electrode structure 130, and a sacrificial layer 150. The epitaxial structure 110 includes a top surface 111, a side surface 112, a first-type semiconductor layer 113 close to the top surface 111, a second-type semiconductor layer 114 far from the top surface 111, and a light-emitting layer 115 located between the first-type semiconductor layer 113 and the second-type semiconductor layer 114. One of the first-type semiconductor layer 113 and the second-type semiconductor layer 114 is, for example, a P-type semiconductor, and the other is, for example, an N-type semiconductor.

[0076] The insulating layer 120 is disposed on the top surface 111 and the side surface 112 of the epitaxial structure 110, and the insulating layer 120 includes an opening 122 above the top surface 111 of the epitaxial structure 110.

[0077] The electrode structure 130 is disposed on the top surface 111 of the epitaxial structure 110 and passes through the opening 122 of the insulating layer 120 to be electrically connected to the epitaxial structure 110. Specifically, in this embodiment, the electrode structure 130 includes a first electrode pad 140, a second electrode pad 141, a first electrode pillar 131 connected to the first electrode pad 140, and a second electrode pillar 132 connected to the second electrode pad 141. The first electrode pad 140 and the first electrode pillar 131 are electrically opposite to the second electrode pad 141 and the second electrode pillar 132.

[0078] The first electrode pad 140 and the second electrode pad 141 are located above the surface 124 of the insulating layer 120. The number of the openings 122 of the insulating layer 120 is two. The first electrode pillar 131 passes through one of the openings 122 of the insulating layer 120 and is electrically connected to the first semiconductor layer 113 of the epitaxial structure 110. The second electrode pillar 132 passes through the other opening 122 of the insulating layer 120 and is electrically connected to the second semiconductor layer 114 of the epitaxial structure 110.

[0079] The first electrode pad 140 and the second electrode pad 141 are connected to the circuit board. In this embodiment, the first electrode pad 140 and the second electrode pad 141 are respectively connected to two backplane pads 22 and 23 of the display backplane 20, for example, but the type of the circuit board is not limited thereto.

[0080] From Figure 1A It can be seen that the first electrode pad 140 and the first electrode pillar 131 are in a T shape in the cross section, and the second electrode pad 141 and the second electrode pillar 132 are in a T shape in the cross section. Therefore, the orthographic projection range of the first electrode pad 140 on the surface 124 (upper surface) of the insulating layer 120 is larger than and covers the orthographic projection range of the corresponding first electrode pillar 131 on the surface 124. The orthographic projection range of the second electrode pad 141 on the surface 124 (upper surface) of the insulating layer 120 is larger than and covers the orthographic projection range of the corresponding second electrode pillar 132 on the surface 124. Of course, in other embodiments, the shapes of the first electrode pad 140 and the first electrode pillar 131 in the cross section and the shapes of the second electrode pad 141 and the second electrode pillar 132 in the cross section are not limited thereto.

[0081] In this embodiment, the sacrificial layer 150 includes two sacrificial blocks 152. One of the sacrificial blocks 152 of the sacrificial layer 150 ( Figure 1A the left sacrificial block 152) is sandwiched between the surface 124 of the insulating layer 120 and the first electrode pad 140, and this sacrificial block 152 is disposed around the first electrode pillar 131. The orthographic projection range of this sacrificial block 152 of the sacrificial layer 150 on the surface 124 of the insulating layer 120 is greater than or equal to the orthographic projection range of the electrode structure 130 on the surface 124.

[0082] Another sacrificial block 152 of the sacrificial layer 150 ( Figure 1A the right sacrificial block 152) is sandwiched between the surface 124 of the insulating layer 120 and the second electrode pad 141, and this sacrificial block 152 is disposed around the second electrode post 132. The orthographic projection range of this sacrificial block 152 of the sacrificial layer 150 on the surface 124 of the insulating layer 120 is equal to the orthographic projection range of the electrode structure 130 on the surface 124. Therefore, the sacrificial layer 150 and the electrode structure 130 can be formed in the same etching process.

[0083] In one embodiment, if the orthographic projection range of the sacrificial block 152 on the surface 124 of the insulating layer 120 is greater than the orthographic projection range of the electrode structure 130 on the surface 124, the force during bonding is more uniform.

[0084] The sacrificial layer 150 includes, for example, a glue containing benzocyclobutene (BCB) and photoresist, polyimide, or a polymer material that decomposes by ultraviolet light irradiation. However, the type of the sacrificial layer 150 is not limited thereto. In this embodiment, the sacrificial layer 150 can be removed by means of light irradiation, heating, etching, or the like.

[0085] When manufacturing the micro light-emitting component 100, the epitaxial structure 110 can be manufactured first, and then the insulating layer 120 is deposited to form the opening 122 of the insulating layer 120. Next, the sacrificial layer 150 is disposed around the opening 122 of the insulating layer 120. Then, conductive metal is deposited in the opening 122 of the insulating layer 120 and on the top surface of the sacrificial layer 150 to form the electrode structure 130.

[0086] Figure 1B is a schematic cross-sectional view of removing the Figure 1A micro light-emitting component from the display backplane. Refer to Figure 1B . In this embodiment, when the micro light-emitting component 100 is to be removed from the display backplane 20, the sacrificial layer 150 is removed first. Since the width of the first electrode post 131 is smaller than the width of the first electrode pad 140, and the width of the second electrode post 132 is smaller than the width of the second electrode pad 141. The structural strength of the first electrode post 131 is smaller than the structural strength of the first electrode pad 140, and the structural strength of the second electrode post 132 is smaller than the structural strength of the second electrode pad 141.

[0087] If the epitaxial structure 110 is moved in a direction away from the display backplane 20 or in a direction of shooting in / out of the drawing plane, as Figure 1B shown, fractures are likely to occur between the junction of the first electrode post 131 and the first electrode pad 140 and between the junction of the second electrode post 132 and the second electrode pad 141. Therefore, Figure 1A at least part of the first electrode pad 140 and the second electrode pad 141 will remain on the two backplane pads 22, 23 to formFigure 1B Two residual electrode structures 30 and 31.

[0088] Therefore, after the epitaxial structure 110 together with the insulating layer 120 is removed from the backplane pads 22 and 23 of the display backplane 20, the backplane pads 22 and 23 and the connected lines (located on the display backplane 20, not shown) themselves will not be pulled and damaged, and can be used again for connection by a new micro-light-emitting component 100.

[0089] Figure 1C is to connect another Figure 1A Micro-light-emitting component to the cross-sectional schematic diagram of the display backplane. Please refer to Figure 1C , in this embodiment, after another micro-light-emitting component 100 is connected to the display backplane 20, the first electrode pad 140 and the second electrode pad 141 of this micro-light-emitting component 100 are respectively connected to the two residual electrode structures 30 and 31 to be bonded to the display backplane 20, and the rework is completed to achieve the effect of in-situ repair.

[0090] Therefore, there is no need to set up spare pads on the display backplane 20 (or other circuit boards), and the circuit layout on the display backplane 20 (or other circuit boards) can be more flexible and elastic. And the transmittance of the display device can be improved.

[0091] The following introduces the micro-light-emitting components of other embodiments, only explaining the differences between different embodiments, and the parts not described are the same as or similar to the above embodiments.

[0092] Figure 2 Is a cross-sectional schematic diagram of a micro-light-emitting component according to another embodiment of the present invention. It should be noted that since Figure 2 The micro-light-emitting component 100a has not been set on the display backplane 20, and Figure 1A The micro-light-emitting component 100 will be upside down. Please refer to Figure 2 , in this embodiment, the shape of the epitaxial structure 110a is slightly different from that of the previous embodiment. Specifically, in this embodiment, the first-type semiconductor layer 113, the light-emitting layer 115, and the first part 114a of the second-type semiconductor layer 114 form a platform M. The second part 114b of the second-type semiconductor layer 114 forms a substrate B relative to the platform M. The first opening 120a of the insulating layer 120 is located on the platform M, and the second opening 120b exposes the second part 114b of the second-type semiconductor layer 114 and is located on the substrate B. Specifically, the micro-light-emitting component 100a here is, for example, a horizontal micro-light-emitting component.

[0093] Figure 3A Is a cross-sectional schematic diagram of a micro-light-emitting component according to another embodiment of the present invention. Figure 3B Is Figure 3ATop view schematic diagram of a micro light-emitting component. Please refer to Figures 3A to 3B , in this embodiment, the first direction D1 is Figure 3A the up and down direction, that is, the height direction of the micro light-emitting component 10ba. The second direction D2 is Figure 3A the left and right direction, that is, the length direction of the micro light-emitting component 100b. The first electrode post 131 and the second electrode post 132 extend along the first direction D1, and the connection line of the first electrode pad 140 and the second electrode pad 141 extends along the second direction D2.

[0094] As Figure 3B shown, the third direction D3 is the width direction of the micro light-emitting component 100b. The third direction D3 is perpendicular to the first direction D1 and the second direction D2. In this embodiment, the cross-sections of the first electrode post 131b and the second electrode post 132b in the first direction D1 are two ellipses, and the lengths of these two ellipses in the second direction D2 are different from the lengths in the third direction D3.

[0095] Specifically, the length of the cross-section of the first electrode post 131b and the second electrode post 132b in the first direction D1 in the second direction D2 is greater than the length in the third direction D3. When the micro light-emitting component 100b needs to be removed later, a force can be applied along the third direction D3, which helps to separate the first electrode post 131b from the first electrode pad 140 and the second electrode post 132b from the second electrode pad 141.

[0096] Figure 4 is a cross-sectional schematic diagram of a micro light-emitting component according to another embodiment of the present invention. Please refer to Figure 4 , in this embodiment, the first electrode post 131 and the second electrode post 132 of the micro light-emitting component 100c respectively include two inner side surfaces 133, 134 facing each other and two outer side surfaces 135, 136 facing away from each other. Here, the sacrificial layer 150 can be removed by light irradiation. By respectively arranging two sacrificial blocks 152c on the two outer side surfaces 135, 136, the two inner side surfaces 133, 134 are exposed. Since the outer side surfaces 135, 136 are more easily irradiated by light, such a design helps to facilitate the removal of the sacrificial blocks 152c.

[0097] Figure 5 is a cross-sectional schematic diagram of a micro light-emitting component according to another embodiment of the present invention. Please refer to Figure 5 , in this embodiment, the first electrode post 131d and the second electrode post 132d of the micro light-emitting component 100d extend along the first direction D1. Each of the first electrode post 131d and the second electrode post 132d includes a first section 137 and a second section 138 in the first direction D1. The second section 138 is located between the first section 137 and the first electrode pad 140 and the second electrode pad 141.

[0098] The first section 137 passes through the opening 122 of the insulating layer 120, and a part of the first section 137 and the second section 138 are surrounded by the sacrificial layer 150. The first section 137 is located within the opening 122, and the sacrificial layer 150 contacts the second section 138. In this embodiment, the cross-sectional area of the second section 138 is smaller than that of the first section 137. When removing the micro light-emitting component 100, such a design helps the breakage between the first electrode post 131d and the first electrode pad 140 and the breakage between the second electrode post 132d and the second electrode pad 141. In an embodiment not shown, the first section 137 may be entirely located within the opening, and the second section 138 may be exposed outside the opening.

[0099] Of course, the dimensional relationship between the first section 137 and the second section 138 is not limited thereto. Figure 6 It is a schematic cross-sectional view of a micro light-emitting component according to another embodiment of the present invention. Please refer to Figure 6 , in the micro light-emitting component 100e of this embodiment, the cross-sectional area of the second section 138e is larger than that of the first section 137e. Preferably, the cross-sectional area of the first section 137e and the cross-sectional area of the second section 138e are greater than or equal to 90%, which can both have the stability of the electrode structure configuration, and the second section 138e is not too large to be unfavorable for subsequent breakage.

[0100] Figure 7 It is a schematic cross-sectional view of a micro light-emitting component connected to a display backplane 20 according to another embodiment of the present invention. Please refer to Figure 7 , in this embodiment, after the micro light-emitting component 100f is connected to the display backplane 20, even if the micro light-emitting component 100f has not yet been removed, the sacrificial layer 150 ( Figure 1A ) can be removed first, so that there is a gap 160 between the first electrode pad 140 and the insulating layer 120, and there is a gap 160 between the second electrode pad 141 and the insulating layer 120. In this way, if the micro light-emitting component 100f needs to be replaced subsequently, the step of removing the sacrificial layer 150 does not need to be performed again. And the influence of the residue of the sacrificial layer on the yield of the display device can be avoided.

[0101] Figure 8A It is a schematic cross-sectional view of an electrode structure and a backplane pad before the reflow process according to an embodiment of the present invention. It should be noted that Figure 8A taking the first electrode pad 140g as an example, but the second electrode pad has the same configuration and will not be elaborated further. Figure 8A The structure can be applied to all embodiments of this case, but the types of electrode structures in all embodiments of this case are not limited thereto.

[0102] Please refer toFigure 8A In this embodiment, the first electrode pad 140g is connected to the backplane pad 22 through the solder layer 146. The first electrode pad 140g includes a first bonding layer 142, a barrier layer 143, and a second bonding layer 144 arranged in sequence. The first bonding layer 142 is connected to the first electrode post 131. In this embodiment, the first bonding layer 142 is, for example, a gold layer. In other embodiments, the first bonding layer 142 can also be a multi-layer structure, which may include a gold layer and a chromium / titanium / aluminum layer. The barrier layer 143 includes materials such as nickel, platinum, titanium tungsten, tungsten, etc. The barrier layer 143 can be a multi-layer structure to prevent the eutectic of the entire first bonding layer 142. The second bonding layer 144 is, for example, a gold layer. In other embodiments, the second bonding layer 144 can also be a multi-layer structure, which may include a gold layer and a chromium / titanium / aluminum layer., wherein the first bonding layer and the second bonding layer have the same material. Of course, the materials of the first bonding layer 142, the barrier layer 143, and the second bonding layer 144 are not limited thereto.

[0103] Figure 8B is Figure 8A a schematic cross-sectional view of the electrode structure and the backplane pad after the reflow process. Please refer to Figure 8B , the first electrode pad 140g is connected to the backplane pad 22 through the solder layer 146. After the reflow process, Figure 8A the second bonding layer 144 of Figure 8B will turn into the eutectic layer 147 of

[0104] Figure 8C a schematic cross-sectional view of the new electrode structure to be connected to the residual electrode structure and the backplane pad. Please refer to Figure 8C , if the epitaxial structure 110 (such as Figure 1B ) is to be removed, the junction between the first electrode post 131 ( Figure 8B ) and the first bonding layer 142 breaks, and becomes the residual electrode structure 30g. Subsequently, the new electrode structure 130g is connected to the first bonding layer 142. In this embodiment, the new electrode structure 130g can include the first electrode post 131 and the first bonding layer 142 (gold layer), the barrier layer 143, the second bonding layer 144 (gold layer), and the solder layer 142g (gold layer and tin layer). The solder layer 142g can form a eutectic with the first bonding layer 142 of the residual electrode structure 30g to form a eutectic layer (not shown).

[0105] In the previous embodiments, the micro-light-emitting component is taken as an example of a flip-chip micro-light-emitting component, but the types of micro-light-emitting components are not limited thereto.

[0106] Figure 9 a schematic cross-sectional view of a micro-light-emitting component 100 according to another embodiment of the present invention. Please refer toFigure 9 , in this embodiment, the micro light-emitting component 100h is a vertical micro light-emitting component. The electrode structure 130h includes an electrode pad 148 and an electrode column 139 connected to the electrode pad 148. The electrode column 139 passes through the opening 122 and is connected to the first semiconductor layer 113, and another electrode pad 149 is directly disposed on the second semiconductor layer 114. Similarly, a sacrificial layer 150 is disposed between the electrode pad 148 and the insulating layer 120. The design of the sacrificial layer 150 in cooperation with the electrode column 139 can help remove the epitaxial structure 110.

[0107] Figure 10 is a cross-sectional schematic view of a micro light-emitting component display device according to an embodiment of the present invention. Please refer to Figure 10 , in this embodiment, the micro light-emitting component display device 10 includes a display backplane 20 and a plurality of micro light-emitting components 100f. The display backplane 20 includes a plurality of backplane pads 22, 23. These micro light-emitting components 100f are disposed on the display backplane 20.

[0108] Taking the number of the micro light-emitting components 100f as three as an example, but the number is not limited thereto. In addition, in this embodiment, the micro light-emitting component 100f is taken as Figure 7 the micro light-emitting component 100f. In this embodiment, a gap 160 exists between the surface 124 of the insulating layer 120 and the corresponding electrode pad. The gap 160 is an air gap 160. Of course, in other embodiments, the micro light-emitting components of the above other embodiments may also be used. That is to say, there will be a sacrificial layer 150 ( Figure 1A ) disposed in the gap 160. Similarly, the micro light-emitting component display device 10 of this embodiment can have the above advantages of facilitating the removal of the micro light-emitting component 100f without damaging the backplane pads 22, 23 and the connected lines.

[0109] Figure 11 is a cross-sectional schematic view of a micro light-emitting component display device according to another embodiment of the present invention. Please refer to Figure 11 , in this embodiment, the micro light-emitting component display device 10a includes a first micro light-emitting component 100i connected to the residual electrode structures 31, 32, and two second micro light-emitting components 100f. The first micro light-emitting component 100i is located in the center, and the two second micro light-emitting components 100f are located on both sides of the first micro light-emitting component 100i.

[0110] The residual electrode structure 31 is located between the first electrode pad 140 of the first micro light-emitting component 100i and the backplane pad 22, and the residual electrode structure 32 is located between the second electrode pad 141 of the first micro light-emitting component 100i and the backplane pad 23. Each of the residual electrode structures 31 and 32 includes a eutectic layer 32, a barrier layer 34, and a bonding layer 36 arranged in sequence, and the eutectic layer 32 is close to the backplane pads 22 and 23.

[0111] In this embodiment, since the first micro light-emitting component 100i is connected to the residual electrode structures 31 and 32, and the second micro light-emitting component 100f is not connected to the residual electrode structures 31 and 32, and the residual electrode structures 31 and 32 themselves have a certain height, the first height H1 of the first micro light-emitting component 100i is greater than the second height H2 of the second micro light-emitting component 100f.

[0112] In summary, the electrode structure of the micro light-emitting component of the present invention is disposed on the top surface of the epitaxial structure and passes through the opening of the insulating layer to be electrically connected to the epitaxial structure. The sacrificial layer is sandwiched between the surface of the insulating layer and the corresponding electrode structure. That is to say, the electrode pads of the electrode structure are separated from the surface of the insulating layer by the sacrificial layer, and the electrode posts of the electrode structure are connected to the electrode pads and pass through the opening of the insulating layer to be connected to the epitaxial structure. When the micro light-emitting component is to be removed from the backplane pad of the display backplane (or other circuit board), as long as the sacrificial layer is removed first, the connection strength between the insulating layer and the electrode pads of the electrode structure is reduced. In addition, the cross-sectional area of the electrode post is small and is relatively easy to break, so that the epitaxial structure together with the insulating layer can be removed from the backplane pad of the display backplane. Since the fracture position of the electrode structure will be at the electrode post of the electrode structure, rather than the electrode pad of the backplane pad of the display backplane, after the epitaxial structure together with the insulating layer is removed from the backplane pad of the display backplane, the backplane pad and the connected circuit itself will not be pulled and damaged, and can be used for connecting a new micro light-emitting component again. Therefore, there is no need to set up spare pads on the display backplane (or other circuit board), and the circuit layout on the display backplane (or other circuit board) can be more flexible and elastic.

[0113] Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present invention, and are not intended to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: they can still modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements on some or all of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A micro light-emitting component, characterized in that, comprising: an epitaxial structure including a top surface and a side surface; an insulating layer disposed on the top surface and the side surface of the epitaxial structure, and the insulating layer includes an opening; an electrode structure disposed on the top surface of the epitaxial structure and respectively including an electrode pad and an electrode post connected to the electrode pad, the electrode post passing through the opening of the insulating layer to be electrically connected to the epitaxial structure; and a sacrificial layer sandwiched between the surface of the insulating layer and the corresponding electrode pad and disposed around the electrode post; wherein the orthographic projection range of the electrode pad on the surface is greater than and covers the orthographic projection range of the corresponding electrode post on the surface.

2. The micro light-emitting component according to claim 1, characterized in that, the orthographic projection range of the sacrificial layer on the surface is greater than or equal to the orthographic projection range of the corresponding electrode structure on the surface.

3. The micro light-emitting component according to claim 1, characterized in that, the electrode post extends along a first direction and includes a first section and a second section in the first direction, the second section being located between the first section and the electrode pad, and the cross-sectional area of the second section is smaller than the cross-sectional area of the first section.

4. The micro light-emitting component according to claim 3, characterized in that, the first section is located within the opening, and the sacrificial layer contacts the second section.

5. The micro light-emitting component according to claim 1, characterized in that, the electrode pad includes a first bonding layer, a barrier layer, and a second bonding layer arranged in sequence, the first bonding layer connecting to the corresponding electrode post, wherein the first bonding layer and the second bonding layer have the same material.

6. The micro light-emitting component according to claim 1, characterized in that, the electrode structure includes a first electrode pad, a second electrode pad, a first electrode post connected to the first electrode pad, and a second electrode post connected to the second electrode pad, the first electrode post and the second electrode post extending along a first direction, the connection line between the first electrode pad and the second electrode pad extending along a second direction, the length of the cross-section of the first electrode post in the second direction being different from the length in a third direction in the first direction, the length of the cross-section of the second electrode post in the second direction being different from the length in the third direction in the first direction, the third direction being perpendicular to the first direction and the second direction.

7. The micro light-emitting component according to claim 1, characterized in that, the electrode structure includes a first electrode pad, a second electrode pad, a first electrode post connected to the first electrode pad, and a second electrode post connected to the second electrode pad, the first electrode post and the second electrode post including two inner side surfaces facing each other and two outer side surfaces facing away from each other, the sacrificial layer including two sacrificial blocks respectively disposed on the two outer side surfaces, exposing the two inner side surfaces.

8. A micro light-emitting component display device, characterized in that, comprising: a display backplane including a plurality of backplane pads; and A plurality of micro light-emitting components are disposed on the display backplane, and each of the plurality of micro light-emitting components includes: An epitaxial structure including a top surface and a side surface; An insulating layer disposed on the top surface and the side surface of the epitaxial structure, and the insulating layer includes an opening; and An electrode structure disposed on the top surface of the epitaxial structure and respectively including an electrode pad and an electrode post connected to the electrode pad. The electrode post passes through the opening of the insulating layer to be electrically connected to the epitaxial structure and is connected to at least one of the plurality of backplane pads, wherein there is a gap between the electrode pad and the surface of the insulating layer; Wherein the orthographic projection range of the electrode pad on the surface is larger than and covers the orthographic projection range of the corresponding electrode post on the surface.

9. The micro light-emitting component display device according to claim 8, Characterized in that, It further includes a sacrificial layer, and the sacrificial layer is disposed in the gap.

10. The micro light-emitting component display device according to claim 8, Characterized in that, The gap is an air gap.

11. The micro light-emitting component display device according to claim 8, Characterized in that, The plurality of micro light-emitting components include a first micro light-emitting component and a second micro light-emitting component connected to a residual electrode structure. The residual electrode structure is located between the electrode pad of the first micro light-emitting component and the corresponding backplane pad. The residual electrode structure includes a eutectic layer, a barrier layer and a bonding layer arranged in sequence, and the eutectic layer is close to the backplane pad.

12. The micro light-emitting component display device according to claim 11, Characterized in that, A first height of the first micro light-emitting component is greater than a second height of the second micro light-emitting component.

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