Methods and apparatus for processing substrates and methods for temperature control

Abstract

This invention relates to a method and apparatus for processing a substrate, as well as a temperature control method. A method for processing a substrate is provided, comprising: performing a first heating process to heat-treat a substrate on which a film is formed; performing a second heating process to heat-treat the substrate after performing the first heating process; a collection operation that collects temperature data of a first heating plate used to heat the substrate in the first heating process; and a first control operation that adjusts the temperature of a second heating plate used to heat the substrate in the second heating process based on the temperature data.

Description

[0001] Cross-reference to related applications

[0002] This application claims priority and benefit to Korean Patent Application No. 10-2021-0074356, filed with the Korean Patent Office on June 8, 2021, the entire contents of which are incorporated herein by reference. Technical Field

[0003] The present invention relates to a method and apparatus for processing a substrate, and more specifically, to a method and apparatus for processing a substrate by heating a substrate using a heating plate, and a temperature control method for controlling the temperature of the heating plate. Background Technology

[0004] To manufacture semiconductor devices or flat panel displays, various processes are performed, such as photolithography, etching, ashing, thin film deposition, and cleaning. Among these processes, photolithography includes: an application process for forming an application film on a substrate (such as a wafer); an exposure process for irradiating the application film formed on the substrate with light using a mask; and a development process for supplying a developer to the application film on which the exposure process has been performed, thereby obtaining a desired pattern on the substrate.

[0005] In addition, generally, in order to stabilize the applied film and pattern formed on the substrate, a heat treatment process is performed between the application process and the exposure process, between the exposure process and the development process, and after the development process. In the heat treatment process, the substrate is placed on a heating plate disposed in a heat treatment chamber, and the heating plate heats the substrate.

[0006] Figure 1 This is a schematic diagram illustrating the temperature control operation of a heating plate in a typical heat treatment process, and Figure 2 It is shown as Figure 1 The reference data input is a graph of the heating plate's set temperature. (Refer to...) Figure 1 and Figure 2 Generally, in order to process the substrate uniformly, the heating plate of the heat treatment chamber is designed to be kept constant at a set temperature RT. Accordingly, a controller C for controlling the temperature of the heating plate receives the set temperature RT as reference data Ref. Furthermore, the controller C controls the feedback so that the temperature of the heating plate can be maintained at the set temperature RT, which is input as the reference data Ref.

[0007] Figure 3 It shows Figure 1 A graph showing the actual temperature change of the heating plate. Figure 3 t1 is the time point at which the substrate is introduced into the heat treatment chamber or the time point at which the substrate is placed on the heating plate.

[0008] The temperature of the substrate is lower than that of the heating plate. Consequently, when the low-temperature substrate is loaded into the heat treatment chamber, the temperature of the heating plate drops rapidly. In this situation, thermal shock may be applied to the heating plate.

[0009] Furthermore, when the temperature of the heating plate drops, the controller C uses feedback control to restore the temperature of the heating plate to the set temperature RT. For example, the controller C receives the temperature measurement value of the heating plate measured by a temperature sensor and adjusts the output of the heater that heats the heating plate to restore the temperature of the heating plate to the set temperature RT. In this case, stabilizing the temperature of the heating plate to the set temperature RT requires a time from t1 to t2 (i.e., up to a). Accordingly, the time required to perform the heat treatment process increases. In addition, the temperature variation amplitude b also increases. When the temperature variation amplitude increases, the pattern formed on the substrate and the spacing between the patterns are not constant and may vary for different areas of the substrate. That is to say, the temperature variation of the heating plate may have a more fatal effect on the heat treatment process performed after the exposure process. Summary of the Invention

[0010] This invention aims to provide a method and apparatus for effectively processing substrates, as well as a method for controlling the temperature of a heating plate.

[0011] This invention also aims to provide a method and apparatus for processing a substrate that minimizes temperature changes in the heating plate of a heating substrate, as well as a method for controlling the temperature of the heating plate.

[0012] This invention also aims to provide a method and apparatus for processing a substrate that can shorten the time consumed in performing a heating process, as well as a method for controlling the temperature of a heating plate.

[0013] This invention also aims to provide a method and apparatus for processing a substrate that can quickly and stably stabilize the temperature changes of a heating plate, as well as a method for controlling the temperature of a heating plate.

[0014] The problems to be solved by the present invention are not limited to those described above, and those skilled in the art will clearly understand from this specification and the accompanying drawings any problems not mentioned.

[0015] An exemplary embodiment of the present invention provides a method for processing a substrate, the method comprising: performing a first heating process to heat-treat a substrate on which a film is formed, and performing a second heating process to heat-treat the substrate after performing the first heating process; a collection operation that collects temperature data of a first heating plate that heats the substrate in the first heating process; and a first control operation that adjusts the temperature of a second heating plate that heats the substrate in the second heating process based on the temperature data.

[0016] According to an exemplary embodiment, the method may further include a generation operation that generates a target curve from temperature data for controlling the temperature of the second heating plate, wherein a first control operation may include adjusting the temperature of the second heating plate based on the target curve.

[0017] According to an exemplary embodiment, the method may further include a second control operation that measures the temperature of the second heating plate in the second heating process and controls the temperature of the second heating plate based on the measured temperature feedback.

[0018] According to an exemplary embodiment, the method may further include an exposure process of irradiating the film with light, wherein a second heating process may be performed after the exposure process.

[0019] According to an exemplary embodiment, the method may further include a developing process of supplying a developer to a film irradiated with light, wherein a second heating process may be performed after the developing process.

[0020] According to an exemplary embodiment, the second heating process can be performed multiple times and may also include a developing process of supplying developer to a film irradiated with light. Any one of the second heating processes may be performed before the developing process and another of the second heating processes may be performed after the developing process.

[0021] According to an exemplary embodiment, the first heating process can be performed before the exposure process.

[0022] According to an exemplary embodiment, the first heating process can be performed multiple times, the collection operation can include collecting two or more temperature data from the first heating process, and the generation operation can include generating a target curve from the temperature data.

[0023] Furthermore, another exemplary embodiment of the present invention provides a method for controlling the temperature of a temperature regulating plate, which regulates the temperature of a substrate. The method includes: performing a temperature regulating process multiple times to regulate the temperature of a substrate on which a film is formed; a collection operation that collects temperature data of a first temperature regulating plate used in a first temperature regulating process performed before an exposure process; a generation operation that predicts, based on the temperature data, the temperature change of a second temperature regulating plate used in a second temperature regulating process performed after an exposure process and generates a prediction curve; and a first control operation that controls the temperature of the second temperature regulating plate based on the prediction curve.

[0024] According to an exemplary embodiment, the generation operation may include generating a target curve symmetrical to the predicted curve based on a set temperature, and in the first control operation, a control value for controlling the temperature of the second temperature regulating plate may be determined based on the target curve.

[0025] According to an exemplary embodiment, the temperature data may include: information about the temperature change of a first temperature regulating plate when performing a first temperature regulating process; a prediction curve may be generated by a transformation function that receives the temperature data and outputs the prediction curve; and the transformation function may be generated based on pre-obtained reference data, which includes: information about the temperature change of the first temperature regulating plate according to set processing conditions when heating the substrate using the first temperature regulating plate; and information about the temperature change of the second temperature regulating plate according to set processing conditions when heating the substrate using the second temperature regulating plate.

[0026] According to an exemplary embodiment, the method may further include a second control operation, which measures the temperature of the second temperature regulating plate in the second temperature regulating process and feeds back the temperature of the second temperature regulating plate to a set temperature based on the measured temperature, wherein a control value for controlling the temperature of the second temperature regulating plate in the second control operation can be determined based on the measured temperature of the second temperature regulating plate.

[0027] According to an exemplary implementation, the duration of performing the first control operation and the duration of performing the second control operation may at least partially overlap.

[0028] According to an exemplary embodiment, the first temperature conditioning process can be performed multiple times, the collection operation can include collecting temperature data from the first temperature conditioning process, and the generation operation can include generating a target curve from the temperature data.

[0029] Another exemplary embodiment of the present invention provides an apparatus for processing a substrate, the apparatus comprising: a liquid processing chamber for liquid processing of the substrate; a heat treatment chamber for heat treatment of the substrate; a transfer unit for transferring the substrate between the liquid processing chamber, the heat treatment chamber, and an external exposure apparatus; and a controller, wherein the heat treatment chamber comprises: a first heat treatment chamber for heat treating the substrate before performing an exposure process by the exposure apparatus; and a second heat treatment chamber for heat treating the substrate after the exposure process has been performed, and the first heat treatment chamber... A heat treatment chamber includes: a first heating plate that heats a substrate; a first temperature sensor that measures the temperature of the first heating plate; and a first heater that controls the temperature of the first heating plate. A second heat treatment chamber includes: a second heating plate that heats a substrate; a second temperature sensor that measures the temperature of the second heating plate; and a second heater that controls the temperature of the second heating plate. A controller receives temperature data of the first heating plate measured by the first temperature sensor and controls the second heater based on the temperature data to make the second heating plate reach a set temperature.

[0030] According to an exemplary embodiment, the controller can generate a prediction curve by predicting the temperature change of the second heating plate from temperature data and generating a target curve symmetrical to the prediction curve based on a set temperature, and the second heater can be controlled based on the target curve.

[0031] According to an exemplary embodiment, the controller can receive the temperature value of the second heating plate measured by the second temperature sensor and feed back to control the second heater so that the received temperature value reaches the set temperature.

[0032] According to an exemplary embodiment, a plurality of first heaters may be provided to independently heat a first region of the substrate and a second region different from the first region when viewed from above, and a plurality of second heaters may be provided to independently heat the first region of the substrate and the second region different from the first region when viewed from above.

[0033] According to an exemplary embodiment, the first temperature sensor can transmit each of the first temperature data of the first heating plate corresponding to the first region and the second temperature data of the first heating plate corresponding to the second region to the controller.

[0034] According to an exemplary embodiment, the controller can generate a first target curve from first temperature data, generate a second target curve from second temperature data, control a second heater corresponding to a first region of a second heating plate based on the first target curve, and control a second heater corresponding to a second region of a second heating plate based on the second target curve.

[0035] According to an exemplary embodiment of the present invention, a method and apparatus for processing a substrate that can effectively process a substrate, and a method for controlling the temperature of a heating plate can be provided.

[0036] Furthermore, according to an exemplary embodiment of the present invention, the temperature variation of the heating plate of the heating substrate can be minimized.

[0037] Furthermore, according to an exemplary embodiment of the present invention, the time consumed in performing the heating process can be shortened.

[0038] Furthermore, according to an exemplary embodiment of the present invention, the temperature change of the heating plate can be stabilized quickly.

[0039] The effects of this invention are not limited to those described above, and those skilled in the art will clearly understand from this specification and the accompanying drawings the effects not mentioned. Attached Figure Description

[0040] Figure 1 This is a schematic diagram illustrating the temperature control operation of a heating plate in a typical heat treatment process.

[0041] Figure 2 It is shown as Figure 1 The reference data input is a graph of the set temperature of the heating plate.

[0042] Figure 3 It shows Figure 1 A graph showing the actual temperature change of the heating plate.

[0043] Figure 4 This is a schematic perspective view of a substrate processing apparatus according to an exemplary embodiment of the present invention.

[0044] Figure 5 To show Figure 4 A cross-sectional view of a substrate processing apparatus for applying or developing blocks.

[0045] Figure 6 for Figure 4 A plan view of the substrate processing apparatus.

[0046] Figure 7 For illustrative purposes only Figure 6 A plan view of an embodiment of a heat treatment chamber.

[0047] Figure 8 To show Figure 7 Front view of the heat treatment chamber.

[0048] Figure 9 It is shown schematically. Figure 7A diagram of an embodiment of a substrate processing apparatus disposed in a liquid processing chamber.

[0049] Figure 10 yes Figure 9 A top view of the substrate processing apparatus installed in the liquid processing chamber.

[0050] Figure 11 This is a schematic block diagram of the controller of the present invention.

[0051] Figure 12 The flowchart illustrates, schematically, a substrate processing method and a temperature control method according to an exemplary embodiment of the present invention.

[0052] Figure 13 yes Figure 12 A detailed flowchart of the generation process.

[0053] Figure 14 It shows Figure 13 The graph shows the state of the predicted curve and the target curve generated during the generation operation.

[0054] Figure 15 yes Figure 12 A detailed flowchart of the control operation.

[0055] Figure 16 This is a block diagram schematically illustrating an embodiment of the temperature control operation of the second heating plate. Figure 15 The first and second control operations are applied to the temperature control operation of the second heating plate.

[0056] Figure 17 It is a schematic diagram showing the temperature change of the second heating plate.

[0057] Figure 18 and Figure 19 This is a diagram used to explain a substrate processing method and a temperature control method according to another exemplary embodiment of the present invention.

[0058] Figure 20 This is a block diagram schematically illustrating another embodiment of the temperature control operation of the cooling plate. Figure 15 The first and second control operations are applied to the temperature control operation of the cooling plate.

[0059] Figure 21 It is a schematic diagram illustrating the temperature changes of the cooling plate. Detailed Implementation

[0060] In the following description, exemplary embodiments of the invention will be described more fully with reference to the accompanying drawings, which illustrate exemplary embodiments of the invention. However, the invention can be implemented differently and is not limited to the following embodiments. Furthermore, in describing exemplary embodiments of the invention in detail, detailed descriptions of relevant well-known functions or configurations will be omitted if it is determined that such detailed descriptions would unnecessarily obscure the essential points of the invention. Additionally, throughout the drawings, the same reference numerals are used for components having similar functions and effects.

[0061] Unless explicitly stated otherwise, the word "comprising," and variations such as "including" or "containing," shall be understood to imply the inclusion of the stated elements but not exclude any other elements. It should be understood that the terms "comprising" and "having" are intended to indicate the presence of the features, quantities, steps, operations, constituent elements and components, or combinations thereof, described in the specification, and do not exclude the possibility of the prior presence or addition of one or more other features, quantities, steps, operations, constituent elements and components, or combinations thereof.

[0062] The singular expressions used in this article include plural expressions unless they have a clearly contradictory meaning in the context. Therefore, the shape and size of elements in the figures may be exaggerated for clarity.

[0063] Terms such as "first" and "second" can be used to describe various constituent elements, but these constituent elements should not be limited by these terms. These terms are only used to distinguish one constituent element from another. For example, without departing from the scope of the invention, a first constituent element may be named a second constituent element, and similarly, a second constituent element may be named a first constituent element.

[0064] It should be understood that when a component is referred to as "connected to" or "connected to" another component, the component can be directly connected to or connected to the other component, but there may also be intermediate components. Conversely, when a component is "directly connected to" or "directly connected to" another component, it should be understood that there are no intermediate components. Other expressions describing relationships between components, such as "between" and "exactly between" or "adjacent to" and "directly adjacent to," should be interpreted similarly.

[0065] All terms used herein (including technical or scientific terms) have the same meaning as those generally accepted by one of ordinary skill in the art to which the inventive concept pertains, unless they are defined differently. Terms defined in a general dictionary shall be interpreted as having a meaning that matches the meaning in the context of the relevant field, and shall not be interpreted as having an ideal or overly formal meaning unless expressly defined in this application.

[0066] In the following text, reference will be made to Figures 4 to 19 Exemplary embodiments of the present invention are described below. Furthermore, all configurations for the transmission substrate W described below may be referred to as transmission units.

[0067] Figure 4 This is a schematic perspective view of a substrate processing apparatus according to an exemplary embodiment of the present invention. Figure 5 To show Figure 4 A cross-sectional view of a substrate processing apparatus for applying or developing blocks, and Figure 6 for Figure 4 A plan view of the substrate processing apparatus.

[0068] Reference Figures 4 to 6 According to an exemplary embodiment of the present invention, a substrate processing apparatus 10 includes an index module 100, a processing module 300, an interface module 500, and a controller 600. The controller 600 will be described below. According to the exemplary embodiment, the index module 100, the processing module 300, and the interface module 500 are arranged in series. Hereinafter, the direction in which the index module 100, the processing module 300, and the interface module 500 are arranged is referred to as a first direction 12, and when viewed from above, a direction perpendicular to the first direction 12 is defined as a second direction 14, and a direction perpendicular to both the first direction 12 and the second direction 14 is defined as a third direction 16.

[0069] The indexing module 100 transfers the substrate W from the container F containing the substrate W to the processing module 300, and receives the processed substrate W back into the container F. The longitudinal direction of the indexing module 100 is arranged in the second direction 14. The indexing module 100 includes a loading port 110 and an index frame 130. The loading port 110 is located on the opposite side of the processing module 300 relative to the index frame 130. The container F containing the substrate W is placed on the loading port 110. Multiple loading ports 110 can be provided, and the multiple loading ports 110 can be arranged along the second direction 14.

[0070] As container F, an airtight container F, such as a front-open unified pod (FOUP), can be used. Container F can be transported by means of a conveying device (not shown), such as an overhead conveyor, overhead transport vehicle, or automated guided vehicle, or placed on loading port 110 by an operator.

[0071] An indexing robot 132 is disposed inside the indexing frame 130. A guide rail 136 (whose longitudinal direction is disposed on the second direction 14) is disposed within the indexing frame 130, and the indexing robot 132 can be configured to be movable on the guide rail 136. The indexing robot 132 includes a hand, a base plate W is placed on the hand, and the hand is configured to be movable forward and backward, rotatable about a third direction 16, and movable along the third direction 16.

[0072] The processing module 300 can perform application and development processes on the substrate W. The processing module 300 can receive the substrate W housed in the container F and perform substrate processing processes. The processing module 300 includes an application block (COT) 300a and a development block (DEV) 300b. The application block 300a performs the application process on the substrate W, and the development block 300b performs the development process on the substrate W. Multiple application blocks 300a are provided and stacked on top of each other. Multiple development blocks 300b are provided and stacked on top of each other. Figure 4 In an exemplary embodiment, two application blocks 300a and two developing blocks 300b are provided. The application blocks 300a may be positioned below the developing blocks 300b. According to the embodiment, the two application blocks 300a perform the same process and can be arranged with the same structure. Furthermore, the two developing blocks 300b can perform the same process and can be arranged with the same structure.

[0073] refer to Figure 6 Each of the application block 300a and the developing block 300b has a heat treatment chamber 320, a transfer chamber 350, a liquid treatment chamber 360, and buffer chambers 312 and 316. The heat treatment chamber 320, transfer chamber 350, liquid treatment chamber 360, and buffer chambers 312 and 316 of the application block 300a may be referred to as a first heat treatment chamber, a first transfer chamber, a first liquid treatment chamber, and a first buffer chamber. The heat treatment chamber 320, transfer chamber 350, liquid treatment chamber 360, and buffer chambers 312 and 316 of the developing block 300b may be referred to as a second heat treatment chamber, a second transfer chamber, a second liquid treatment chamber, and a second buffer chamber.

[0074] The heat treatment chamber 320 performs a heating process on the substrate W. The liquid processing chamber 360 can supply liquid to the substrate W to form a liquid film, or supply a developer for extracting a pattern from a liquid film that has undergone an exposure process. The liquid film can be a photoresist layer or an anti-reflective applying layer (ARC). The transfer chamber 350 transfers the substrate W between the heat treatment chamber 320 and the liquid processing chamber 360 in the application block 300a or the developing block 300b.

[0075] The transfer chamber 350 is configured such that its longitudinal direction is parallel to the first direction 12. A transfer robot 350 is disposed within the transfer chamber 352. The transfer robot 352 transfers substrates between the heat treatment chamber 320, the liquid treatment chamber 360, and the buffer chambers 312 and 316. According to an embodiment, the transfer robot 352 includes a hand on which the substrate W is placed, and the hand can be configured to be movable forward and backward, rotatable about a third direction 16, and movable along the third direction 16. A guide rail 356 (whose longitudinal direction is parallel to the second direction 12) is disposed within the transfer chamber 350, and the transfer robot 352 can be configured to be movable on the guide rail 356.

[0076] Multiple heat treatment chambers 320 are provided. The heat treatment chambers 320 are arranged along a first direction 12. The heat treatment chambers 320 are located on one side of the transfer chamber 350.

[0077] Figure 7 For illustrative purposes only Figure 6 A plan view of an embodiment of a heat treatment chamber, and Figure 8 for Figure 7 Front view of the heat treatment chamber.

[0078] Reference Figure 7 and Figure 8 The heat treatment chamber 320 has a housing 3210, a cooling unit 3220, a heating unit 3230, and a conveyor plate 3240.

[0079] The housing 3210 is configured in a generally rectangular parallelepiped shape. An entrance (not shown) is formed on the side wall of the housing 3210, through which the substrate W enters and exits. The entrance can remain open. Optionally, a door (not shown) can be provided to open and close the entrance. A cooling unit 3220, a heating unit 3230, and a transfer plate 3240 are disposed within the housing 3210. The cooling unit 3220 and the heating unit 3230 are arranged side by side along a second direction 14. According to an embodiment, the cooling unit 3220 can be positioned closer to the transfer chamber 350 than the heating unit 3230.

[0080] The cooling unit 3220 includes a cooling plate 3222. When viewed from above, the cooling plate 3222 may have a generally circular shape. The cooling plate 3222 is provided with a cooling member 3224. According to an embodiment, the cooling member 3224 is formed on the inner side of the cooling plate 3222 and may be configured as a flow path through which the cooling fluid flows.

[0081] The heating unit 3230 includes a heating plate 3232, a cover 3234, a heater 3233, and a temperature sensor 3239. When viewed from above, the heating plate 3232 has a generally circular shape. The heating plate 3232 has a diameter larger than that of the substrate W. The heater 3233 is mounted in the heating plate 3232. The heater 3233 can be configured as a heating resistor to which current is applied. The heating plate 3232 is provided with a lifting pin 3238 that is vertically drivable along a third direction 16. The lifting pin 3238 receives the substrate W from a conveying facility outside the heating unit 3230 and places the received substrate W on the heating plate 3232, or lifts the substrate W from the heating plate 3232 to deliver the substrate W to the conveying facility outside the heating unit 3230. According to an embodiment, three lifting pins 3238 may be provided. The cover 3234 has a space in which an open lower portion is provided. The cover 3234 is located above the heating plate 3232 and moves up and down by the driver 3236. The space formed by the cover 3234 and the heating plate 3232 according to the movement of the cover 3234 is set as the heating space for heating the substrate W. The temperature sensor 3239 can measure the temperature of the heating plate 3232 in real time and transmit the measured temperature value of the heating plate 3232 to the controller 600 in real time.

[0082] Furthermore, the heating plate 3232, cover 3234, heater 3233, and temperature sensor 3239, which are disposed in the first heat treatment chamber 320 of the application block 300a, can be referred to as the first heating plate, the first cover, the first heater, and the first temperature sensor. Similarly, the heating plate 3232, cover 3234, heater 3233, and temperature sensor 3239, which are disposed in the second heat treatment chamber 320 of the developing block 300b, can be referred to as the second heating plate, the second cover, the second heater, and the second temperature sensor.

[0083] The conveyor plate 3240 is configured in the shape of a large disk and has a diameter corresponding to the diameter of the substrate W. Notches 3244 are formed at the edges of the conveyor plate 3240. The notches 3244 may have a shape corresponding to the protrusions 3543 formed on the hand 354 of the conveyor robot 352. Furthermore, the number of notches 3244 may be set to correspond to the number of protrusions 3543 formed on the hand 354, and they are formed at positions corresponding to the protrusions 3543. When the vertical position of the hand 354 and the conveyor plate 3240 changes from a position where the hand 354 and the conveyor plate 3240 are vertically aligned, the substrate W is conveyed between the hand 354 and the conveyor plate 3240. The conveyor plate 3240 is mounted on a guide rail 3249 and can be moved along the guide rail 3249 between a first region 3212 and a second region 3214 by a driver 3246. The conveyor plate 3240 is provided with a plurality of slit-shaped guide grooves 3242. Guide grooves 3242 extend from the end of conveyor plate 3240 to the inner side of conveyor plate 3240. The length direction of guide grooves 3242 is set along the second direction 14, and guide grooves 3242 are spaced apart from each other along the first direction 12. Guide grooves 3242 prevent conveyor plate 3240 and lifting pin 3238 from interfering with each other when the substrate W is conveyed between conveyor plate 3240 and heating unit 3230.

[0084] A transfer plate 3240, on which a substrate W is placed, cools the substrate W while in contact with a cooling plate 3222. The transfer plate 3240 is formed of a material with high thermal conductivity to facilitate efficient heat transfer between the cooling plate 3222 and the substrate W. According to an embodiment, the transfer plate 3240 may be made of a metallic material.

[0085] Heating units 3230 disposed in some of the heat treatment chambers 320 can supply gas to improve the adhesion rate of photoresist to the substrate W while heating the substrate W. According to an embodiment, the gas may be hexamethyldisilane (HMDS) gas.

[0086] Multiple liquid handling chambers 360 are provided. Some of the liquid handling chambers 360 may be stacked on top of each other. The liquid handling chambers 360 are located on one side of the transfer chamber 350. The liquid handling chambers 360 are arranged side by side along a first direction 12. Some of the liquid handling chambers 360 are located adjacent to the index module 100. Hereinafter, these liquid handling chambers 360 are referred to as front liquid handling chambers 362. Other liquid handling chambers 360 are located adjacent to the interface module 500. Hereinafter, these liquid handling chambers 360 are referred to as rear liquid handling chambers 364.

[0087] The first liquid processing chamber, located in the application block 300a, can supply application liquid, and the second liquid processing chamber, located in the developing block 300b, can supply developer. In the liquid processing chambers 360 of the application block 300a, the front liquid processing chamber 362 applies the first liquid to the substrate W, and the rear liquid processing chamber 364 applies the second liquid to the substrate W. The first and second liquids can be different types of liquids. According to an exemplary embodiment, the first liquid can be an application liquid for forming an antireflective film, and the second liquid can be an application liquid for forming a photoresist film. Photoresist can be applied to the substrate W on which the antireflective film is formed. Optionally, the first liquid can be photoresist, and the second liquid can be an antireflective film. In this case, the antireflective film can be applied to the substrate W on which photoresist is applied. Optionally, the first and second liquids can be the same type of liquid, and both the first and second liquids can be photoresist.

[0088] Figure 9 It is shown schematically. Figure 7 A diagram of an embodiment of a substrate processing apparatus disposed in a liquid processing chamber, and... Figure 10 Is Figure 9 A top view of the substrate processing apparatus installed in the liquid processing chamber. Figure 9 and Figure 10 A first liquid processing chamber is shown, which is a liquid processing chamber 360 disposed in the application block 300a. However, a second liquid processing chamber, which is a liquid processing chamber 360 disposed in the developing block 300b, has the same or similar configuration as the first liquid processing chamber, and therefore, a repeated description of the second liquid processing chamber will be omitted.

[0089] refer to Figure 9 and Figure 10 The substrate processing apparatus 1000 for processing substrate W can be disposed in the liquid processing chamber 360. The substrate processing apparatus 1000 for performing liquid processing on substrate W can be disposed in the liquid processing chamber 360.

[0090] The substrate processing apparatus 1000 disposed in the liquid processing chamber 360 may include a housing 1100, a processing container 1200, a support unit 1300, an airflow supply unit 1400, a liquid supply unit 1500, and a controller 1900.

[0091] The housing 1100 may have an internal space 1102. The housing 1100 may be configured as a quadrilateral cylindrical shape with the internal space 1102. An opening (not shown) may be formed on one side of the housing 1100. This opening can serve as an inlet through which the substrate W is loaded into or unloaded from the internal space 1102. Furthermore, to selectively close the opening, a door (not shown) may be installed in the area adjacent to the opening. When performing a process of loading the substrate W into the internal space 1102, the door can seal the internal space 1102 by blocking the opening.

[0092] Processing container 1200 can be disposed within internal space 1102. Processing container 1200 can have processing space 1202. That is, processing container 1200 can be a bowl-shaped object with processing space 1202. Accordingly, internal space 1102 can be disposed to surround processing space 1202. Processing container 1200 can have a cup shape with an open top. Processing space 1202 of processing container 1200 can be the space in which support unit 1300 (described below) supports and rotates substrate W. Processing space 1202 can be the space in which each of liquid supply unit 1500 and wetting unit 1600 supplies processing medium and processes substrate W.

[0093] The processing container 1200 may include an inner cup 1210 and an outer cup 1230. The outer cup 1230 is configured to surround the circumference of the support unit 1300, and the inner cup 1210 may be positioned inside the outer cup 1230. When viewed from above, each of the inner cup 1210 and the outer cup 1230 may have an annular shape. The space between the inner cup 1210 and the outer cup 1230 may serve as a recycling path through which processing media introduced into the processing space 1202 are recycled.

[0094] When viewed from above, the inner cup 1230 can be shaped around a rotation axis 1330 of the support unit 1300, which will be described below. For example, when viewed from above, the inner cup 1230 can be shaped like a circular plate around the rotation axis 1330. When viewed from above, the inner cup 1230 can be positioned to overlap with a discharge port 1120 coupled to the housing 1100. The inner cup 1230 can have an interior and an exterior. The upper surfaces of each of the interior and exterior can be configured to have different angles from each other based on a virtual horizontal line. For example, when viewed from above, the interior can be positioned to overlap with the support plate 1310 of the support unit 1300 (described below). The interior can be positioned facing the rotation axis 1330. The interior can have an upper surface that slopes upward as it moves away from the rotation axis 1330, and the exterior can extend outward from the interior. The exterior can have an upper surface that slopes downward as it moves away from the rotation axis 1330. The upper end of the interior can align vertically with the lateral end portion of the substrate W. According to an embodiment, the point where the exterior and interior intersect can be located lower than the upper end of the interior. The point where the interior and exterior intersect can be rounded. The exterior can be combined with the outer cup 1230 to form a recycling path through which processing media, such as processing liquids and wetting media, are recycled.

[0095] The outer cup 1230 can be configured as a cup shape surrounding the support unit 1300 and the inner cup 1210. The outer cup 1230 may have a bottom 1232, a side portion 1234, and an inclined portion 1236. The bottom 1232 may have a circular plate shape, which is hollow. A recycling line 1238 may be connected to the bottom 1232. The recycling line 1238 can be used to recycle the processing medium supplied to the substrate W. The processing medium recovered by the recycling line 1238 can be reused by an external recycling system. The side portion 1234 may have an annular shape surrounding the support unit 1300. The side portion 1234 may extend vertically from the side end of the bottom 1232. The side portion 1234 may extend upward from the bottom 1232.

[0096] The inclined portion 1236 can extend from the upper end of the side portion 1234 in a direction toward the central axis of the outer cup-shaped member 1230. The inner surface of the inclined portion 1236 can be configured to be inclined upwards to be close to the support unit 1300. The inclined portion 1236 can be configured to have an annular shape. During the processing of the substrate W, the upper end of the inclined portion 1236 can be positioned above the substrate W supported by the support unit 1300.

[0097] The inner lifting member 1242 and the outer lifting member 1244 can move the inner cup 1210 and the outer cup 1230 upward or downward, respectively. The inner lifting member 1242 is connected to the inner cup 1210, and the outer lifting member 1244 is connected to the outer cup 1230 to move the inner cup 1210 and the outer cup 1230 upward and downward, respectively.

[0098] The support unit 1300 can support and rotate the substrate W. The support unit 1300 can be a chuck for supporting and rotating the substrate W. The support unit 1300 may include a support plate 1310, a rotation shaft 1330, and a rotation driver 1350. The support plate 1310 may have a mounting surface on which the substrate W is placed. When viewed from above, the support plate 1310 may have a circular shape. When viewed from above, the support plate 1310 may have a diameter smaller than that of the substrate W. A suction hole (not shown) is formed in the support plate 1310 to clamp the substrate W by a vacuum suction method. Optionally, an electrostatic plate (not shown) is provided on the support plate 1310 to clamp the substrate W by electrostatic adsorption using electrostatic force. Optionally, the support plate 1310 may be provided with support pins for supporting the substrate W, such that the support pins are in physical contact with the substrate W to clamp the substrate W.

[0099] A rotating shaft 1330 can be coupled to a support plate 1310. The rotating shaft 1330 can be coupled to the lower surface of the support plate 1310. The rotating shaft 1330 can be configured such that its longitudinal direction is in the vertical direction. The rotating shaft 1330 can rotate by receiving power from a rotating driver 1350. Accordingly, the rotating shaft 1330 can rotate the support plate 1310. The rotating driver 1350 can change the rotational speed of the rotating shaft 1330. The rotating driver 1350 can be a motor providing driving force. However, the invention is not limited thereto, and the rotating driver 1350 can be modified in various ways to provide driving force using known devices.

[0100] Airflow supply unit 1400 can supply airflow to interior space 1102. Airflow supply unit 1400 can supply downward airflow to interior space 1102. Airflow supply unit 1400 can supply temperature-controlled and / or humidity-controlled airflow to interior space 1102. Airflow supply unit 1400 can be installed in housing 1100. Airflow supply unit 1400 can be installed above processing container 1200 and support unit 1300. Airflow supply unit 1400 may include fan 1410, airflow supply line 1430, and filter 1450. Airflow supply unit 1430 can supply temperature-controlled and / or humidity-controlled external airflow to interior space 1102. Filter 1450 is installed in airflow supply line 1430 to remove impurities contained in external airflow flowing through airflow supply line 1430. Furthermore, when fan 1410 is driven, external airflow supplied by airflow supply line 1430 can be uniformly distributed to interior space 1102.

[0101] The liquid supply unit 1500 can supply processing liquid to the substrate W supported by the support unit 1300. The processing liquid PR supplied to the substrate W by the liquid supply unit 1500 can be an application liquid. For example, the application liquid can be a photosensitive liquid, such as photoresist. Furthermore, the liquid supply unit 1500 can supply pre-wetting liquid to the substrate W supported by the support unit 1300. The pre-wetting liquid TH supplied to the substrate W by the liquid supply unit 1500 can be a liquid capable of changing the surface properties of the substrate W. For example, the pre-wetting liquid TH can be a diluent capable of changing the surface properties of the substrate W to be hydrophobic.

[0102] The liquid supply unit 1500 may include a pre-wetting nozzle (non-wetting nozzle) 1510, a processing liquid nozzle 1530, an arm 1540, a guide rail 1550, and a driver 1560.

[0103] The pre-wetting nozzle 1510 supplies the pre-wetting liquid TH to the substrate W. The pre-wetting nozzle 1510 supplies the pre-wetting liquid TH to the substrate W in a flow manner. The processing liquid nozzle 1530 supplies the processing liquid PR to the substrate W. The processing liquid nozzle 1530 can be an application liquid nozzle, which supplies an application liquid such as the photoresist described above. The processing liquid nozzle 1530 supplies the processing liquid PR to the substrate W in a flow manner.

[0104] Arm 1540 can support pre-wetting nozzle 1510 and processing fluid nozzle 1530. Pre-wetting nozzle 1510 and processing fluid nozzle 1530 can be mounted at one end of arm 1540. Each of pre-wetting nozzle 1510 and processing fluid nozzle 1530 can be mounted on the lower surface of one end of arm 1540. When viewed from above, pre-wetting nozzle 1510 and processing fluid nozzle 1530 can be arranged in a direction parallel to the longitudinal direction of guide rail 1550 (described below). The other end of arm 1540 can be coupled to actuator 1560. Arm 1540 can be moved by actuator 1560. Accordingly, the position of pre-wetting nozzle 1510 and processing fluid nozzle 1530 mounted on arm 1540 can be changed. The direction of movement of arm 1540 can be guided along guide rail 1550, on which actuator 1560 is mounted. Guide rail 1550 can be configured such that its longitudinal direction faces horizontal. For example, the guide rail 1550 can be configured such that its longitudinal direction faces a direction parallel to the first direction 12. Optionally, the arm 1540 can be rotated by coupling to a rotating shaft whose longitudinal direction faces a third direction 16. The rotating shaft can be rotated by a driver. Accordingly, the positions of the pre-wetting nozzle 1510 and the treatment fluid nozzle 1530 mounted on the arm 1540 can be changed.

[0105] Return to reference Figure 5 and Figure 6 Multiple buffer chambers 312 and 316 are provided. Some of these buffer chambers 312 and 316 are located between the index module 100 and the transfer chamber 350. Hereinafter, the aforementioned buffer chambers are referred to as front buffers 312. Multiple front buffers 312 are provided, and the multiple front buffers are positioned to be stacked on top of each other in the vertical direction. Another portion of the buffer chambers 312 and 316 is located between the transfer chamber 350 and the interface module 500. Hereinafter, the aforementioned buffer chambers are referred to as rear buffers 316. Multiple rear buffers 316 are provided, and the multiple rear buffers are positioned to be stacked on top of each other in the vertical direction. Each of the front buffers 312 and rear buffers 316 temporarily stores multiple substrates W. The substrates W stored in the front buffer 312 are loaded and unloaded by the index robot 132 and the transfer robot 352. The substrates W stored in the rear buffer 316 are loaded or unloaded by the transfer robot 352 and the first robot 552.

[0106] Furthermore, a first front buffer robot 314 and a second front buffer robot 315 for transferring the substrate W between the front buffers 312 can be disposed on one side and the other side of the front buffers 312. When viewed from above, the first front buffer robot 314 and the second front buffer robot 315 can be positioned symmetrically to each other, with the front buffers 312 interposed between them. Furthermore, the first front buffer robot 314 and the second front buffer robot 315 can each have a transfer hand. Furthermore, the first front buffer robot 314 and the second front buffer robot 315 can be disposed at different heights from each other.

[0107] Furthermore, a first rear buffer robot 318 and a second rear buffer robot 319 for transferring the substrate W between the rear buffers 316 can be disposed on one side and the other side of the rear buffers 316. When viewed from above, the first rear buffer robot 318 and the second rear buffer robot 319 can be positioned symmetrically to each other, with the rear buffers 316 interposed between them. Furthermore, the first rear buffer robot 318 and the second rear buffer robot 319 can each have a transfer hand. Furthermore, the first rear buffer robot 318 and the second rear buffer robot 319 can be disposed at different heights from each other.

[0108] Interface module 500 connects processing module 30 to external exposure equipment 700. Interface module 500 includes interface frame 510, additional process chamber 520, interface buffer 530, and interface robot 550.

[0109] A fan filter unit for forming a downward flow therein can be disposed at the upper end of the interface frame 510. An additional process chamber 520, an interface buffer 530, and an interface robot 550 are disposed inside the interface frame 510. In the additional process chamber 520, the substrate W, which has been fully processed in the application block 300a, can be transferred to the exposure apparatus 700. In the exposure apparatus 700, an exposure process by irradiating light using a mask can be performed on the substrate W on which the application film is formed. Furthermore, a predetermined additional process can be performed before the substrate W is loaded into the exposure apparatus 700. Optionally, the additional process chamber 520 can perform a predetermined additional process before the substrate W, which has been fully processed in the exposure apparatus 700, is loaded into the developing block 300b. According to one embodiment, the additional process can be an edge exposure process for exposing the edge region of the substrate W, a top surface cleaning process for cleaning the upper surface of the substrate W, or a lower surface cleaning process for cleaning the lower surface of the substrate W. A plurality of additional process chambers 520 are provided, and these plurality of additional process chambers can be configured to be stacked on top of each other. All additional process chambers 520 can be configured to perform the same process. Optionally, a portion of the additional process chambers 520 can be configured to perform different processes.

[0110] Interface buffer 530 provides space for the substrate W to temporarily reside during transport between application block 300a, additional process chamber 520, exposure equipment 700, and developing block 300b. Multiple interface buffers 530 can be provided, and multiple interface buffers 530 can be configured to be stacked on top of each other.

[0111] According to an embodiment, the additional process chamber 520 may be disposed on one side of the transfer chamber 350 based on an extension line in the longitudinal direction, and the interface buffer 530 may be disposed on the other side of the transfer chamber.

[0112] An interface robot 550 transfers a substrate W between an application block 300a, an additional process chamber 520, an exposure apparatus 700, and a developing block 300b. The interface robot 550 may have a transfer hand for transferring the substrate W. The interface robot 550 may be configured as one or more robots. According to an embodiment, the interface robot 550 has a first robot 552 and a second robot 554. The first robot 552 may be configured to transfer the substrate W between the application block 300a, the additional process chamber 520, and the interface buffer 530, and the second robot 554 may be configured to transfer the substrate W between the interface buffer 530 and the exposure apparatus 700, and between the interface buffer 530 and the developing block 300b.

[0113] The first robotic arm 552 and the second robotic arm 554 each include a transfer hand, on which the base plate W is placed, and the hand can be configured to be movable forward and backward, rotatable about an axis parallel to the third direction 16, and movable along the third direction 16.

[0114] Figure 11 This is a schematic block diagram of the controller of the present invention. The controller 600 can control the substrate processing apparatus 10. The controller 600 can control the configuration of the substrate processing apparatus 10. The controller 600 can control the configuration of the substrate processing apparatus 10 to execute the substrate processing method and temperature control method described below. For example, the controller 600 can control a second heater included in a second heat treatment chamber to execute the substrate processing method and temperature control method described below. Additionally, the controller 600 can receive temperature data for temperature changes of the first heating plate and the second heating plate in real time from a first temperature sensor and a second temperature sensor, respectively, to execute the substrate processing method and temperature control method described below.

[0115] The controller 600 may include a first controller 610, a second controller 620, and a curve generator 630. The first controller 610 may be a tracking controller that performs a first control operation S23-1, described below. The second controller 620 may be an adjustment controller that performs a second control operation S23-2, described below. The curve generator 630 may perform a generation operation S22, described below. Furthermore, the controller 600 may include: a process controller formed by a microprocessor (computer) that performs control of the substrate processing apparatus 10; a user interface formed by a keyboard, in which an operator performs command input operations to manage the substrate processing apparatus 10; a display for visualizing and displaying the operating status of the substrate processing apparatus 10, etc.; and a storage unit that stores control programs for executing processes performed in the substrate processing apparatus 10 under the control of the process controller, or stores programs (i.e., processing schemes) for executing processes in various components according to various data and process conditions. Furthermore, the user interface and the storage unit may be connected to the process controller. The processing solution can be stored in a storage medium within the storage unit, and the storage medium can be a hard disk, a portable disk (such as a CD-ROM or DVD), or a semiconductor memory (such as flash memory).

[0116] Figure 12 This is a flowchart illustrating, schematically, a substrate processing method and a temperature control method according to an exemplary embodiment of the present invention. (Reference) Figure 12 According to an exemplary embodiment of the present invention, the substrate processing method may include application processes S11 and S13, an exposure process S15, and a development process S17. Application processes S11 and S13 may include a first application process S11 and a second application process S13. The first application process S11 may be a process of forming a thin film (such as the aforementioned ARC) on a substrate W by supplying an application liquid. The second application process S13 may be a process of supplying an application liquid to form a thin film (such as the aforementioned photoresist film) on the substrate W. The exposure process S15 may be a process of irradiating the thin film formed on the substrate W using a mask with light. The development process S17 may be a process of forming a pattern on the substrate W by supplying a developer to the thin film on the substrate W to which the exposure process S15 has been performed.

[0117] A first-1 heating process S12 can be performed between the first application process S11 and the second application process S13. The first-1 heating process S12 can be an ARC baking process that stabilizes the above-mentioned ARC.

[0118] The first-second heating process S14 can be performed between the second application process S13 and the exposure process S15. The first-second heating process S14 can be a soft baking process that stabilizes the photoresist film and heats the substrate W to a low temperature. In the first-second heating process S14, the solvent components remaining on the substrate W can be evaporated.

[0119] Alternatively, the first heating process S12 and the first heating process S14 performed before the exposure process S15 can also be referred to as the first heating process.

[0120] A second-1 heating process S16 is performed between the exposure process S15 and the development process S17. The second-1 heating process S16 can be a post-exposure bake (PEB) process. In the second-1 heating process S16, the surface of the photoresist film on the substrate W can be planarized, and the standing wave (grains formed at the photoresist film interface due to light interference during the exposure process) can be improved.

[0121] After performing the developing process S17, a second heating process S18 can be performed. The second heating process S18 can be a hard baking process, in which the solvent and developer remaining on the substrate W are removed, and the thermal properties of the photoresist film are improved.

[0122] Alternatively, the second heating process S16 and the second heating process S18 performed after the exposure process S15 can also be referred to as the second heating process.

[0123] The first heating process can be performed in a first heat treatment chamber, which is heat treatment chamber 320 provided in the application block 300a. The second heating process can be performed in a second heat treatment chamber, which is heat treatment chamber 320 provided in the developing block 300b.

[0124] The temperature control method for the second heating plate installed in the second heat treatment chamber will be described in detail below.

[0125] Return to reference Figure 12 The temperature control method for the second heating plate for heating substrate W according to an exemplary embodiment of the present invention may include a collection operation S21, a generation operation S22, and a control operation S23.

[0126] In the collection operation S21, temperature data MP of the first heating plate used to heat the substrate W in the first heating processes S12 and S14 can be collected. For example, in the collection operation S21, a first temperature sensor can measure the temperature of the first heating plate, and the measured temperature data can be transmitted to the controller 600. The temperature data MP may include information about the temperature change of the first heating plate over time. The collection operation S21 can be performed multiple times. For example, the collection operation S21 can be performed in each of the first-1 heating process S12 and the first-2 heating process S14. That is, in the collection operation S21, at least two or more temperature data MP can be collected from each of the multiple executions of the first heating process.

[0127] In the generation operation S22, a target curve TP can be generated based on the collected temperature data MP to bring the temperature of the second heating plate to the set temperature.

[0128] Figure 13 yes Figure 12 A detailed flowchart of the generation operation, and Figure 14 It shows Figure 13 The graph shows the states of the predicted curve and the target curve generated during the generation operation. (Reference) Figure 13 and Figure 14 The generation operation S22 may include the prediction curve generation operation S22-1 and the target curve generation operation S22-2.

[0129] In the prediction curve generation operation S22-1, based on the temperature data MP collected in the collection operation S21 regarding the temperature change of the first heating plate, a prediction curve PP regarding the predicted temperature change of the second heating plate can be generated. For example, the prediction curve PP can be generated using a transformation function that takes the temperature data MP as input and the prediction curve PP as output. The transformation function can be generated using pre-obtained reference data.

[0130] Specifically, the first heating processes S12 and S14 and the second heating processes S16 and S18 can have different processing conditions for processing the substrate. For example, the temperature at which the substrate W is heated in the first heating processes S12 and S14 can be different from the temperature at which the substrate W is heated in the second heating processes S16 and S18. Furthermore, the temperature of the substrate W loaded into the first heating unit during the first heating processes S12 and S14 can be different from the temperature of the substrate W loaded into the second heating unit during the second heating processes S16 and S18. In other words, the temperature change of the first heating plate in the first heating processes S12 and S14 can not be exactly the same as the temperature change of the second heating plate in the second heating processes S16 and S18. Taking into account the differences in processing conditions between the heating processes, the conversion function enables the output of a prediction curve PP. Additionally, taking into account the differences in physical properties between the first heating plate and the second heating plate, the conversion function enables the output of a prediction curve PP.

[0131] A transformation function can be generated using pre-obtained reference data. The reference data can be pre-obtained data. The reference data may include: information regarding the temperature change of the first heating plate based on set processing conditions when heating the substrate using the first heating plate; and information regarding the temperature change of the second heating plate based on set processing conditions when heating the substrate using the second heating plate. When collecting the temperature changes of the first and second heating plates from the reference data, the target to be processed can be the same substrate. For example, when acquiring the reference data, the substrate heated by the first heating plate can be transferred to the second heating plate. The reference data includes: set processing conditions when heating the substrate W using the first heating plate (e.g., the target heating temperature and heating time of the substrate W) and set processing conditions when heating the substrate W using the second heating plate (e.g., the target heating temperature and heating time of the substrate W).

[0132] Multiple reference data points can be obtained. Multiple reference data points can be statistically analyzed. The transformation function generated based on the statistical reference data can use the temperature data MP obtained in the first heating processes S12 and S14 as input values ​​to output a predicted curve PP, which represents the temperature change of the second heating plate in the second heating processes S16 and S18.

[0133] In the target curve generation operation S22-2, a target curve TP for bringing the second heating plate to a set temperature RT can be generated from the predicted curve PP. The target curve TP can have a shape symmetrical to the predicted curve PP based on the set temperature RT.

[0134] Furthermore, the generation operation S22 can be performed while the exposure process S15 is being executed. That is, since the target curve TP is generated while the exposure process S15 is being performed, the aforementioned second heating process can be prevented from being delayed.

[0135] Return to reference Figure 12 The target curve TP generated in generation operation S22 can be used to control the temperature of the second heating plate used to heat the substrate W in the second heating process. For example, the target curve TP can be used to control the temperature of the second heating plate that heats the substrate W in a second-1 heating process S16 performed after exposure process S15 and / or in a second-2 heating process S18 performed after development process S17. For example, the target curve TP can be used as reference data to control the output of the second heater used to determine the temperature of the second heating plate.

[0136] Figure 15 yes Figure 12 A detailed flowchart of the control operation. Figure 16 This is a block diagram schematically illustrating an embodiment of the temperature control operation of the second heating plate. Figure 15 The first and second control operations are applied to the temperature control operation of the second heating plate, and Figure 17 It is a schematic diagram showing the temperature change of the second heating plate.

[0137] refer to Figures 15 to 17 According to an exemplary embodiment of the present invention, the control operation S23 may include a first control operation S23-1 and a second control operation step S23-2.

[0138] The first controller 610 can execute a first control operation S23-1. In the first control operation S23-1, the target curve TP can be used as reference data Ref1. In the first control operation S23-1, the temperature of the second heating plate can be controlled based on the target curve TP. The control value used to control the temperature of the second heating plate in the first control operation S23-1 can be determined based on the target curve TP, and is not affected by the measured value measured by the second temperature sensor.

[0139] The second controller 620 can execute the second control operation S23-2. In the second control operation S23, the set temperature RT can be used as reference data Ref2. In the second control operation S23-2, the temperature control of the second heating plate can be controlled based on the set temperature RT. For example, when the temperature of the second heating plate measured by the second temperature sensor is different from the set temperature RT, the second controller 620 controls the second heater to bring the temperature of the second heating plate up to the set temperature RT. This process is repeated until the temperature of the second heating plate reaches the set temperature RT.

[0140] Furthermore, the duration of executing the first control operation S23-1 and the duration of executing the second control operation S23-2 may at least partially overlap. For example, the first control operation S23-1 and the second control operation S23-2 may be executed simultaneously. For example, the first control operation S23-1 may begin before the second control operation S23-2. Alternatively, the first control operation S23-1 may begin after the second control operation S23-2.

[0141] When the first control operation S23-1 and the second control operation S23-2 are executed together, the control value output of the first controller 610 and the control value output of the second controller 620 can be combined with each other to be transmitted to the second heater for controlling the temperature of the second heating plate.

[0142] Temperature variation of the heating plate used in the heat treatment process of heating substrate W and reference Figure 3 The description is the same. Figure 3 The temperature variation of the heating plate shown is a result of the controller C, which controls the temperature of the heating plate, using only a set temperature RT with a constant temperature value as reference data Ref and performing feedback control. More specifically, the controller C measures the temperature of the heating plate and repeats the process of adjusting the heating plate temperature when the measured temperature differs from the set temperature RT. In other words, because the temperature of the heating plate is controlled after an initial temperature measurement, a significant amount of time is required to stabilize the temperature of the heating plate.

[0143] However, according to an exemplary embodiment of the present invention, a predicted curve PP is generated by predicting the temperature change of the second heating plate by collecting temperature data MP in collection operation S21, and a target curve TP is generated by the generated predetermined curve PP. Furthermore, in control operation S23, the temperature of the second heating plate is adjusted by combining the control values ​​of the first controller 610 and the second controller 620. Using the control value output by the first controller 610, the actual temperature AT of the second heating plate can quickly approach the set temperature RT (preemptive response to large temperature changes). As the control value output by the second controller 620, the small difference between the actual temperature AT and the set temperature RT of the second heating plate can be precisely controlled (eliminating small temperature differences). Therefore, the duration of the second heating process can be effectively shortened, and excessive thermal shock applied to the second heating plate is prevented by preventing sudden temperature drops in the second heating plate.

[0144] Furthermore, the second heating process S16, which is executed first after the exposure process S15, is the heating process that has the greatest impact on the quality of the pattern formed on the substrate W. When the control operation S23 according to an exemplary embodiment of the present invention is executed in the second heating process S16, the temperature of the second heating plate can be maintained at a set temperature RT, thereby further improving the quality of the pattern formed on the substrate W.

[0145] Furthermore, as described above, since the target curve TP is generated while performing the exposure process S15, the problem of delaying the start of the second heating process can be prevented.

[0146] Furthermore, the degree of temperature change of the heating plate can vary depending on the characteristics of the substrate W (e.g., size and type). However, according to an exemplary embodiment of the invention, during the process of processing a substrate W, the temperature change of the second heating plate in the second heating process after exposure is predicted by the temperature change of the first heating plate in the first heating process before exposure, thereby controlling the temperature of the second heating plate. In other words, since a target curve TP for temperature control of the second heating plate is generated for each substrate W, the unique characteristics of each substrate W can be more accurately reflected in the temperature control of the second heating plate.

[0147] Figure 18 and Figure 19 This is a diagram used to explain a substrate processing method and a temperature control method according to another exemplary embodiment of the present invention.

[0148] The first heater in the first heat treatment chamber (as heat treatment chamber 320 provided in the application block 300a) can be provided in multiple ways so as to independently heat the first region A1 (center region) and the second region A2 (edge ​​region) of the substrate W when viewed from the top. For example, any one of the first heaters can be provided in the region of the first heating plate corresponding to the center region of the substrate W, while the other first heater can be provided in the region of the first heating plate corresponding to the edge region of the substrate W.

[0149] The second heater in the second heat treatment chamber (as heat treatment chamber 320 disposed in the developing block 300b) can be configured in multiple ways to independently heat the first region A1 (center region) and the second region A2 (edge ​​region) of the substrate W when viewed from the top. For example, any one of the second heaters can be disposed in the region of the second heating plate corresponding to the first region A1, which is the center region of the substrate W, and the other second heater can be disposed in the region of the second heating plate corresponding to the second region A2, which is the edge region of the substrate W.

[0150] In addition, the first temperature sensor can transmit the first temperature data MP1 corresponding to the first heating plate in the first region A1 and the second temperature data MP2 corresponding to the first heating plate in the second region A2 to the controller 600.

[0151] The controller 600 can generate a first target curve TP1 from the first temperature data MP1. Furthermore, the controller 600 can generate a second target curve TP2 from the first temperature data MP1.

[0152] The controller 600 can control any one of the second heaters located in the region corresponding to the first region A1 of the second heating plate, where the first region A1 is the central region of the substrate W, and the controller can also control any one of the second heaters located in the region corresponding to the second region A2 of the second heating plate, where the second region A2 is the edge region of the substrate W.

[0153] In the above embodiments, although the invention has been described as an example based on performing a first heating process in a first heat treatment chamber 320 (the heat treatment chamber 320 disposed to the application block 300a) and a second heating process in a second heat treatment chamber 320 (the heat treatment chamber 320 disposed to the developing block 300b), the invention is not limited thereto. For example, the first heating process and the second heating process may be performed in the same heat treatment chamber 320. In this case, it means that the first heating plate and the second heating plate have the same configuration.

[0154] In the above embodiments, although the present invention has been described based on the application of a temperature control method for adjusting the temperature of a plate to a heating plate, the present invention is not limited thereto. For example, the temperature control method for controlling the temperature of a plate to control the temperature of a plate to control the temperature of a cooling plate 3222 can be applied in the same or similar manner. For example, as Figure 20 and Figure 21 As shown, the cooling plate 322 that cools the substrate W before the exposure process is referred to as the first cooling plate, and the cooling plate 322 that cools the substrate W after the exposure process is referred to as the second cooling plate. The temperature control method can perform a first control operation S23-1, which predicts the temperature change of the second cooling plate by collecting temperature data of the first cooling plate used in the first cooling process performed before the exposure process, thereby generating a prediction curve PP, generating a target curve TP from the generated prediction curve PP, and adjusting the temperature of the second cooling plate based on the generated target curve TP; and the temperature control method can perform a second control operation S23-2, which measures the temperature of the second cooling plate and controls the temperature of the second cooling plate based on the measured temperature feedback.

[0155] Furthermore, although the present invention has been described as an embodiment based on the following situation, namely that the control value output of the first controller 610 and the control value output of the second controller 620 are combined and transmitted to the second heater for controlling the temperature of the second heating plate when the first control operation S23-1 and the second control operation S23-2 are executed together, the present invention is not limited thereto. For example, the control value output of the first controller 610 and the control value output of the second controller 620 can be executed alternately. For example, the first controller 610 may output a control value of 0.1 one second after the start of the process, the second controller 620 may output a control value 0.2 seconds after the start of the process, the first controller 610 may output a control value again after 0.3 seconds, and the second controller 620 may output a control value 0.4 seconds after the start of the process. Since the reference data Ref1 outputs a control value through the target curve TP and is independent of the measurement value of the second temperature sensor, the first controller 610 can output a control value that can respond to large temperature changes of the second heating plate. Since the control value output by the second controller 620 is determined based on the temperature of the second heating plate measured by the second temperature sensor, the second controller 620 can output a control value corresponding to a small temperature change of the second heating plate.

[0156] Furthermore, the accuracy of the aforementioned predicted curve PP can be supplemented based on actual process results. For example, after the substrate W is transferred to the second heating plate, if there is a difference between the temperature of the second heating plate measured by the second temperature sensor and the predicted curve PP, the predicted curve PP can be corrected, and the target curve TP can be regenerated based on the corrected predicted curve PP.

[0157] The foregoing detailed description illustrates the present invention. Furthermore, the foregoing has shown and described exemplary embodiments of the invention, and the invention can be used in various other combinations, modifications, and environments. That is, modifications or alterations can be made to the foregoing within the scope of the inventive concept disclosed herein, the scope equivalent to this disclosure, and / or the scope of technology or knowledge in the art. The foregoing exemplary embodiments describe the optimal state for carrying out the technical spirit of the invention, and various changes are possible in specific fields and uses of the invention. Accordingly, the foregoing detailed description of the invention is not intended to limit the invention to the disclosed exemplary embodiments. Furthermore, the appended claims should be construed as also including other exemplary embodiments.

Claims

1. A method for processing a substrate, the method comprising: Perform a first heating process to heat-treat the substrate on which the film is formed; After performing the first heating process, an exposure process is performed to irradiate the film with light; A second heating process is performed on the substrate after the exposure process is executed. The collection operation collects temperature data of the first heating plate that heats the substrate in the first heating process. A generation operation is performed to generate a target curve from the temperature data for controlling the temperature of a second heating plate used to heat the substrate in the second heating process. A first control operation, wherein the first control operation adjusts the temperature of the second heating plate that heats the substrate in the second heating process based on the target curve; as well as The second control operation measures the temperature of the second heating plate during the second heating process and uses the measured temperature as feedback to control the temperature of the second heating plate.

2. The method according to claim 1, further comprising: The developer is supplied to the developing process of the film irradiated by the light. The second heating process is performed after the developing process.

3. The method according to claim 1, wherein, The second heating process was performed multiple times, and It also includes a development process in which a developer is supplied to the film irradiated with the light. Perform any one of the second heating processes before the developing process, and Another step in the second heating process is performed after the development process.

4. The method according to claim 1, wherein, The first heating process was performed multiple times. The collection operation includes collecting two or more temperature data points from the first heating process, and The generation operation includes generating the target curve from the two or more temperature data.

5. A method for controlling the temperature of a temperature regulating plate, wherein the temperature regulating plate regulates the temperature of a substrate, the method comprising: The temperature regulation process is performed multiple times, wherein the temperature regulation process regulates the temperature of the substrate on which the film is formed; The collection operation collects temperature data of the first temperature regulating plate used in the first temperature regulating process performed before the exposure process in the temperature regulating process. The generation operation predicts the temperature change of the second temperature control plate used in the second temperature control process executed after the exposure process in the temperature control process based on the temperature data, so as to generate a prediction curve, and generates a target curve symmetrical to the prediction curve based on a set temperature. as well as A first control operation, wherein the first control operation controls the temperature of the second temperature regulating plate based on the target curve; as well as The second control operation measures the temperature of the second temperature regulating plate during the second temperature regulation process, and feeds back the temperature of the second temperature regulating plate to the set temperature based on the measured temperature.

6. The method according to claim 5, wherein, The temperature data includes information about the temperature change of the first temperature regulating plate when the first temperature regulating process is performed. The predicted curve is generated by a transformation function that receives the temperature data and outputs the predicted curve. The conversion function is generated based on pre-obtained reference data, which includes: information about the temperature change of the first temperature regulating plate according to the set processing conditions when the substrate is heated using the first temperature regulating plate; and information about the temperature change of the second temperature regulating plate according to the set processing conditions when the substrate is heated using the second temperature regulating plate.

7. The method according to claim 5, wherein, Based on the measured temperature of the second temperature regulating plate, a control value is determined for controlling the temperature of the second temperature regulating plate in the second control operation.

8. The method according to claim 7, wherein, The duration of the first control operation and the duration of the second control operation overlap at least partially.

9. The method according to any one of claims 5 to 8, wherein, The first temperature regulation process was executed multiple times. The collection operation includes collecting the temperature data from the first temperature conditioning process, and The generation operation includes generating the target curve from the temperature data.

10. An apparatus for processing a substrate, the apparatus comprising: A liquid processing chamber for performing liquid processing on the substrate; A heat treatment chamber for heat treating the substrate; A transfer unit is used to transfer the substrate between the liquid processing chamber, the heat treatment chamber, and the external exposure equipment; as well as Controller The heat treatment chamber includes: A first heat treatment chamber is used to heat-treat the substrate before the exposure process is performed by the exposure equipment; and A second heat treatment chamber is used to heat treat the substrate that has undergone the exposure process, and The first heat treatment chamber includes: A first heating plate heats the substrate; A first temperature sensor measures the temperature of the first heating plate; and A first heater, which controls the temperature of the first heating plate; and The second heat treatment chamber includes: A second heating plate heats the substrate. A second temperature sensor measures the temperature of the second heating plate; and A second heater, which controls the temperature of the second heating plate; and The controller receives temperature data of the first heating plate measured by the first temperature sensor, predicts the temperature change of the second heating plate from the temperature data, generates a target curve symmetrical to the predicted curve based on a set temperature, controls the second heater based on the target curve to make the second heating plate reach the set temperature, and receives the temperature value of the second heating plate measured by the second temperature sensor, and feeds back to control the second heater to make the received temperature value reach the set temperature.

11. The apparatus according to claim 10, wherein, Multiple first heaters are provided to independently heat a first region of the substrate and a second region different from the first region when viewed from above, and Multiple second heaters are provided to independently heat a first region of the substrate and a second region that is different from the first region when viewed from above.

12. The apparatus according to claim 11, wherein, The first temperature sensor transmits each of the first temperature data of the first heating plate corresponding to the first region and the second temperature data of the first heating plate corresponding to the second region to the controller.

13. The apparatus according to claim 12, wherein, The controller generates a first target curve from the first temperature data. A second target curve is generated from the second temperature data. The second heater, corresponding to the first region of the second heating plate, is controlled based on the first target curve, and The second heater, corresponding to the second region of the second heating plate, is controlled based on the second target curve.

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