Light emitting device array with reduced optical cross-talk

By using organic semiconductors in a micro-LED array to absorb light of a predetermined wavelength and form a mesh structure, the problem of optical crosstalk in high-resolution micro-LED arrays is solved, resulting in improved color contrast and color gamut, making it suitable for high-resolution displays.

CN115461861BActive Publication Date: 2026-06-23PLESSEY SEMICON LTD

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
PLESSEY SEMICON LTD
Filing Date
2021-05-12
Publication Date
2026-06-23

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Abstract

An array comprising a plurality of light-emitting pixels, wherein at least two of the plurality of light-emitting pixels are separated by an organic semiconductor dispersed in a medium, wherein the organic semiconductor is configured to absorb light of a predetermined wavelength, thereby reducing optical cross-talk across the medium between the at least two of the plurality of light-emitting pixels.
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Description

TECHNICAL FIELD

[0001] The present application relates to arrays of light emitting pixels and methods of forming arrays of light emitting pixels. In particular, but not exclusively, the present application relates to arrays of light emitting diode devices having reduced optical cross-talk and methods of forming arrays of light emitting diode devices having reduced optical cross-talk. BACKGROUND

[0002] Light emitting devices are known to have a wide range of practical applications, including for example in display technology. In particular, it is well known that light emitting diode (LED) devices have the potential to provide efficient light sources for a variety of pixel array based display technologies. Improvements in LED light generation efficiency and light extraction, and the production of smaller LEDs (with smaller light emitting surface areas) and the integration of different wavelength LED emitters into arrays, have enabled the provision of high quality colour arrays with a wide range of applications. However, as the pitch between pixels in such arrays is reduced to very small pitches (e.g. less than 5 pm) in order to provide higher resolution micro-LED based pixel arrays, a number of difficulties arise, particularly in relation to the manufacture and colour gamut of such arrays.

[0003] One particular challenge in reducing the pitch between pixels in micro-LED device arrays is to separate the individual light emitting pixels such that the light emitted by one pixel in the array does not interfere with the light emitted by another pixel. Where such cross-talk in the light emission between pixels in an array exists, the resulting array suffers in terms of the overall quality of the emitted light (including colour and contrast).

[0004] Known techniques for reducing optical cross-talk between pixels, for example in liquid crystal display (LCD) applications, are achieved by creating a matrix surrounding individual ones of the pixels in the array using a "black absorber". However, black absorbers, such as "black resists" (e.g. the pigmented photoresist described in Kudo et al, Journal of Photopolymer Science and Technology, Vol. 9, No. 1 (1996), pp. 121-130 for black matrix) are typically not resolvable to less than 10 pm, making them unsuitable for use in ultra-high resolution micro-LED arrays with a pixel pitch of less than 5 pm.

[0005] Accordingly, as the size of features in high resolution arrays, such as micro-LED arrays, is very small, there are significant challenges in processing the arrays to provide high quality micro-LED devices with relatively low optical cross-talk. SUMMARY

[0006] To mitigate at least some of the aforementioned problems, a light-emitting pixel array according to the appended claims is provided. Furthermore, a method for forming a light-emitting pixel array according to the appended claims is provided.

[0007] An array comprising a plurality of light-emitting pixels is provided, wherein at least two of the plurality of light-emitting pixels are separated by organic semiconductors dispersed in a medium, wherein the organic semiconductors are configured to absorb light of a predetermined wavelength, thereby reducing optical crosstalk across the medium between at least two of the plurality of light-emitting pixels. Furthermore, a method for forming an array comprising a plurality of light-emitting pixels is provided, wherein at least two of the plurality of light-emitting pixels are separated by organic semiconductors dispersed in a medium, wherein the organic semiconductors are configured to absorb light of a predetermined wavelength, thereby reducing optical crosstalk across the medium between at least two of the plurality of light-emitting pixels.

[0008] Advantageously, it can provide high-resolution arrays with improved color contrast and color gamut.

[0009] Preferably, at least two of the plurality of light-emitting pixels are separated by a distance of less than or equal to 2 μm and preferably less than or equal to 1 μm.

[0010] Advantageously, it provides an ultra-high resolution array of luminescent pixels, thereby enabling an improved display suitable for applications that benefit from particularly high resolution arrays, such as augmented reality applications, in which the display is typically positioned close to the user.

[0011] Preferably, at least two of the plurality of light-emitting pixels each include a micro-light-emitting diode (LED) device (e.g., an LED device formed on a microscale, as understood by those skilled in the art, wherein the light-emitting surface of the micro-LED is less than or equal to 100 μm). 2 The order of magnitude and in which the pixel pitch of the micro-LED array is less than or equal to 10 μm).

[0012] Advantageously, micro LED devices are efficient light sources for forming efficient light-emitting pixel arrays, with reduced energy consumption and increased light output compared to other light sources.

[0013] Preferably, at least one of the plurality of light-emitting pixels includes a light conversion layer arranged to receive input light having a dominant peak wavelength and convert the input light into output light having a dominant peak wavelength.

[0014] Advantageously, the light conversion layer enables the use of highly efficient LEDs (such as blue light-emitting nitride-based epitaxially grown crystal semiconductor devices) as the pump source for the conversion layer, thereby enabling the use of the most efficient LEDs while reducing the need to implement different types of LEDs in the array.

[0015] Preferably, these organic semiconductors are conjugated organic semiconductors comprising multiple conjugated structures, preferably wherein these organic semiconductors are organic semiconductors, more preferably wherein the multiple conjugated structures comprise a core and arms.

[0016] Advantageously, this organic semiconductor is tunable to provide functionality that enables its use in standard semiconductor manufacturing techniques, while also enabling efficient processing of structures with smaller features than those in known technologies.

[0017] Preferably, at least two of the plurality of conjugate structures have different functional properties.

[0018] Advantageously, versatility means that organic semiconductors can be implemented in the color conversion layer to provide high-quality, fast-response downconversion for the input light wavelength. Advantageously, versatility means that those organic semiconductors can be tunable to absorb light of multiple wavelengths, thereby providing an efficient absorption layer that facilitates shorter pixel pitch in the emitting pixel array.

[0019] Preferably, the array includes additional organic semiconductors configured to absorb light of a different predetermined wavelength than the predetermined wavelength.

[0020] Advantageously, light of a specific wavelength is absorbed by different organic semiconductors, thereby covering the range of undesirable wavelengths that would otherwise cause optical crosstalk between luminescent pixels.

[0021] Preferably, these organic semiconductors are configured to absorb light within a predetermined wavelength range that includes the predetermined wavelength.

[0022] Advantageously, light in the range of visible light is absorbed, thereby helping to reduce optical crosstalk between emitting pixels and providing improved color emission from the array.

[0023] Preferably, the medium is at least one of resin and polymer media.

[0024] Advantageously, resins and polymers provide a medium in which organic semiconductors are dispersed, while being able to be processed efficiently using known semiconductor manufacturing tools in an economical (time and cost-effective) manner.

[0025] Preferably, the array is a high-resolution micro-LED array with a pixel pitch of less than 10 μm, and more preferably less than 4 μm.

[0026] Advantageously, the use of organic semiconductors in high-resolution light-emitting pixel arrays can reduce optical crosstalk at scales with particularly advantageous applications that benefit from such high resolution.

[0027] Preferably, each of the plurality of light-emitting pixels has a size of less than or equal to 100 μm. 2 Preferably less than 16μm 2 The luminescent surface.

[0028] Advantageously, not only can closer pixels be obtained by reducing pixel pitch, but also a smaller luminescent surface can be produced, thereby enhancing the overall emission from the high-resolution luminescent pixel array while maintaining color integrity.

[0029] Other aspects of the invention will become clear from the description and appended claims. Attached Figure Description

[0030] The embodiments of the present invention have been described in detail with reference to the accompanying drawings, which are merely examples, wherein:

[0031] Figure 1A A cross-sectional view of three luminescent pixels is shown;

[0032] Figure 1B A plan view of the luminescent pixel array is shown;

[0033] Figure 2 The absorption spectra of materials containing organic semiconductors are shown; and

[0034] Figure 3 The emission spectra of materials containing organic semiconductors of varying thicknesses are shown. Detailed Implementation

[0035] As described above, shrinking the array of light-emitting diode (LED) devices to produce high-resolution micro-LED arrays with associated microscale emitting pixels leads to difficulties associated with optical crosstalk between the emitting pixels in the array, and thus results in reduced light purity associated with the emitting pixels, and reduced contrast between emitting pixels compared to arrays formed by larger features (e.g., with longer pixel pitch and / or conventionally larger LED devices). Reference Figures 1A to 3 The described structure and method provide an array of light-emitting pixels with reduced optical crosstalk, thereby enabling the provision of high-resolution micro-LED arrays with improved color gamut and contrast.

[0036] Figure 1A A cross-sectional view 100 of three light-emitting pixels 116a, 116b, and 116c is shown. A complementary metal-oxide-semiconductor (CMOS) backplane 102 is shown, on which an array of microLEDs 104a, 104b, and 104c is provided. The CMOS backplane 102 is configured to work with the microLEDs 104a, 104b, and 104c to selectively control light emission from the microLED array. Figure 1AThree microLEDs, 104a, 104b, and 104c, are shown. These microLEDs are nitride-based epitaxial crystal semiconductor LEDs configured to emit light with a dominant blue peak wavelength (approximately 450 nm). To provide a red-green-blue (RGB) multicolor display, a color conversion layer formed on the microLEDs 104a, 104b, and 104c is used to convert the blue light emitted by them.

[0037] Figure 1A View 100 shows a first blue microLED 104a on which a transparent resin 112 is deposited. A protective passivation layer 114 is deposited on the transparent resin 112. The protective layer 114 is transparent to visible light and forms at least a portion of the light-emitting surface associated with the microLED 104a. The microLED 104a, the transparent resin 112, and the protective layer 114 form a first light-emitting pixel 116a. Although the transparent resin 112 is used to treat the protective layer 114 so that the protective layer 114 is uniformly distributed on the different light-emitting pixels in the light-emitting pixel array, in other examples, an alternative or additional layer is used instead of the transparent resin 112. In other examples, the transparent resin 112 is omitted where no color conversion is performed on the light from the associated light-emitting diode device.

[0038] A second blue microLED 104b is also shown, on which a color conversion layer 108 is formed. This color conversion layer is configured to convert light from the microLED 104b into a dominant wavelength such that the input light having a blue dominant peak wavelength is converted to a red dominant wavelength. A protective passivation layer 114 is present on the color conversion layer 108. The protective layer 114 is transparent to visible light and forms at least a portion of the light-emitting surface associated with the microLED 104b. The microLED 104b, the color conversion layer 108, and the protective layer 114 form a second light-emitting pixel 116b.

[0039] A third microLED 104c is also shown, configured to emit light with a dominant peak wavelength of blue (approximately 450 nm). A color conversion layer 110, distinct from the color conversion layer 108 associated with the second microLED 104b, is provided on the third blue microLED 104c. The second color conversion layer 110 is configured to receive input light from the third microLED 104c and convert it from light with a dominant peak wavelength of blue to light with a dominant peak wavelength of green. A passivation layer serving as a protective layer 114 is present on the color conversion layer 110. The protective layer 114 is transparent to visible light and forms at least a portion of the light-emitting surface associated with the microLED 104b. The microLED 104a, the color conversion layer 110, and the protective layer 114 form a third light-emitting pixel 116c.

[0040] about Figure 1A The described color conversion layers 108 and 110 include a medium in which organic semiconductors are dispersed. It is known that downconversion organic semiconductors can be tuned to achieve target physical properties. In particular, advantageously, organic semiconductors can achieve specific values ​​in terms of ionization potential or electron affinity, absorption and emission characteristics, charge transport properties, phase behavior, solubility, and handleability. Typically, organic semiconductors are conjugated organic semiconductors comprising multiple conjugated structures. In the example, such conjugated structures include a core and arms. The functionality of these components of the organic semiconductor is tuned to provide specific properties.

[0041] For example, macromolecules are discussed in *Acc. Chem. Res*, 2019, Vol. 52, pp. 1665-1674 and in *J. Mater. Chem. C*, 2016, Vol. 4, p. 11499. Tunable macromolecules include conjugated organic semiconductors containing multiple conjugated structures. These are typically organic semiconductors. Such structures can be formed to include a core and arms. These multiple conjugated structures can be formed to have different functional properties, such as different absorption and / or emission characteristics.

[0042] refer to Figure 1A Color conversion layers 108 and 110 are used, in which organic semiconductors are configured to absorb blue light received from their respective LEDs 104b and 104c. The organic semiconductors are then further configured to emit light at different converted wavelengths. For example, one emitting pixel 116b is configured to emit red light from color conversion layer 108 while absorbing blue light from micro-LED 104b. Another pixel 116c is configured to emit green light from color conversion layer 110 while absorbing blue light from micro-LED 104c. Advantageously, the use of organic semiconductors makes it possible to implement thin color conversion layers that are advantageous for smaller LEDs. Although regarding... Figure 1AThe color conversion layers 108 and 110 described are arranged to absorb and emit light of specific wavelengths, but those skilled in the art will understand that, in other examples, alternatively or additionally, different combinations and configurations of light wavelength conversion are used to provide different arrays of luminescent pixels.

[0043] LEDs 104a, 104b, and 104c are epitaxially grown to have a diameter of less than or equal to 10 μm. 2 A monolithic array of blue micro-LEDs on the main emitting surface. In another example, LEDs 104a, 104b, and 104c are associated with the CMOS backplane 102, alternatively or additionally, for example, using pick-and-place methods. The blue micro-LEDs 104a, 104b, and 104c are nitride-based epitaxially grown compound crystal semiconductor LEDs. In another example, other LEDs are used, such as other III-V or II-VI-based materials. In another example, alternative or additional LEDs of different sizes and shapes are implemented. Advantageously, LEDs 104a, 104b, and 104c are monolithically grown, thus providing high-quality materials with excellent uniformity and efficiency without the need to transfer individual LED devices. Advantageously, the monolithic LED array is coupled to the backplane 102 to enable control of the individual LEDs 104a, 104b, and 104c in the monolithic array. LEDs 104a, 104b, and 104c are grown as part of a monolithic LED array using metal-organic chemical vapor deposition (MOCVD). In other examples, LEDs 104a, 104b, and 104c are formed as part of a monolithic array using alternative and / or additional techniques, such as molecular beam epitaxy (MBE) and other suitable deposition / growth techniques. In still other examples, other additional and / or alternative semiconductor fabrication and processing techniques are used to provide the monolithic array of LEDs 104a, 104b, and 104c.

[0044] A filler 106 is provided between the light-emitting pixels in the light-emitting pixels 116a, 116b, 116c formed by an assembly of micro-LEDs with or without a color conversion layer. The filler 106 is formed by dispersing organic semiconductors in a medium and patterning or depositing the medium between the light-emitting pixels to form an array of filler 106. As described above with reference to color conversion layers 108, 110, the organic semiconductors are tunable to provide certain properties. The organic semiconductors dispersed to form the filler 106 are configured to absorb light of a predetermined wavelength. Although the filler 106 is described with respect to a medium in which the organic semiconductors are configured to absorb light of a predetermined wavelength, in another example, the medium includes additional organic semiconductors configured to absorb light of a different predetermined wavelength.

[0045] exist Figure 1AIn the example, filler 106 is configured to absorb visible light within a predetermined wavelength range. Advantageously, filler 106 is formed between light-emitting pixels 116a, 116b, 116c, such that light emitted by microLEDs 104a, 104b, 104c associated with each of the light-emitting pixels 116a, 116b, 116c is absorbed around the periphery of each of the light-emitting pixels 116a, 116b, 116c surrounded by filler 106. Advantageously, filler 106 forms a mesh around the light-emitting pixels 116a, 116b, 116c, such that light emission from the light-emitting pixels 116a, 116b, 116c is confined to the light-emitting surface associated with each of these light-emitting pixels. Advantageously, a protective passivation layer 114 is used to bury the light-emitting structure (formed from microLEDs and a color conversion layer), such that the light emitted by each light-emitting pixel is laterally confined, thereby contributing to the contrast between the light-emitting pixels and to the color gamut of the resulting array of light-emitting pixels.

[0046] Figure 1B A plan view 100' of the pixel array in a micro LED array is shown. A mesh array of filler 106 surrounding pixel 116 is shown. Pixel 116 corresponds to... Figure 1A The description refers to any combination of micro LEDs 104a, 104b, 104c having color conversion layers 108, 110 or transparent resin 112, and... Figure 1B In the middle, besides the other 116 luminescent pixels, information about... Figure 1A The blue, green, and red luminescent pixels 116a, 116b, and 116c are described. Although shown in a specific arrangement... Figure 1A and Figure 1B The light-emitting pixels are 116a, 116b, and 116c, but in another example, the light-emitting pixel array comprises any suitable number of light-emitting pixels arranged in any suitable manner and having any suitable light-emitting surface associated with each light-emitting pixel. Although the filler 106 is shown as surrounding each individual pixel, in another example, according to the structure in which the filler 106 is utilized, the filler 106 is alternatively or additionally spaced at least two pixels to reduce optical crosstalk while surrounding the pixel group.

[0047] The luminescent pixel 116 has a luminescent surface corresponding to a planar view area of ​​pixel 116. Although the pixel is shown as a square in the planar view, in other examples, alternatively or additionally, the shape of the pixel planar view is different. For example, pixel 116 may present a hexagonal luminescent surface. In other examples, pixel 116 may be in a group.

[0048] In one example, advantageously, the array of microLEDs 104a, 104b, 104c is processed using a minimal number of processing steps to provide a transparent resin 112, color conversion layers 108, 110, and an additional protective layer 114. For example, this processing involves simultaneously depositing the protective layer 114 on each light-emitting pixel structure. Although the formation of the filler 106 is performed once the array is provided, in another example, the filler 106 is formed at any appropriate stage in the formation of the light-emitting pixel array.

[0049] Advantageously, the filler 106 is formed of a light-definable material. This light-definable material includes a medium in which organic semiconductors are dispersed. The organic semiconductors are configured to absorb light of a first predetermined wavelength. In another example, the organic semiconductors are also configured to absorb light of a second predetermined wavelength different from the first predetermined wavelength. In yet another example, additionally or alternatively, the medium in which the organic semiconductors are dispersed may be defined using different methods, such as using thermal curing to harden the medium once it has been formed around the light-emitting pixels in the light-emitting pixel array.

[0050] Figure 2 An absorption spectrum 200 of a light-definable material including organic semiconductors is shown, for example in Figure 1A and Figure 1B The light-definable material used as filler 106. Figure 2 The image shows the absorption spectrum 200 of a light-definable material comprising organic semiconductors dispersed within it. The absorption level is shown on the y-axis 204 and plotted as a function of wavelength, while the wavelength is shown on the x-axis 202.

[0051] A first absorption peak 206 at 350 nm is shown. This absorption peak 206 corresponds to the absorption of ultraviolet light by a photodefinable material medium in which organic semiconductors are dispersed. As part of a photolithographic patterning technique, the absorption of light at 350 nm allows the medium in which organic semiconductors are dispersed to be cured. A second absorption peak 208, which extends over a predetermined wavelength range greater than 420 nm, is also shown. The organic semiconductors are tuned such that the second absorption peak 208 absorbs visible light generated by the light-emitting pixel 116.

[0052] Advantageously, with Figure 2 The combination of an organic semiconductor with the absorption characteristics shown, and a medium in which the organic semiconductor is dispersed, provides an excellent and efficient material for providing information about... Figure 1A and 1B The described filler is 106.

[0053] Specifically, the medium in which organic semiconductors are dispersed is arranged to cure in response to the absorption of ultraviolet light (e.g., 350 nm light). Therefore, ultraviolet (UV) light is used to harden the material in which organic semiconductors are dispersed. However, the medium itself does not respond to light of other wavelengths.

[0054] Advantageously, this facilitates the manufacturing steps used in mainstream semiconductor equipment. For example, in the case of using standard photolithography tools to cure resins or polymers, Figure 2 The absorption peak 206 at 350 nm shown indicates that the UV exposure in the lithography tool is completely absorbed, thus improving the control of the process.

[0055] Such as about Figure 2 The second absorption peak 208, describing further absorption at visible wavelengths, means that the light-definable material comprising the dielectric and organic semiconductor is suitable for defining individual pixels in a micro-LED pixel array. Advantageously, using an organic semiconductor capable of absorbing the visible spectrum means that the functionality of the dielectric and filler as an absorption layer is no longer required.

[0056] Figure 3 This demonstrates the use of this organic semiconductor to absorb visible light. Figure 3 The light emission spectrum 300 of a light-definable material of varying thickness, comprising an organic semiconductor configured to absorb blue light, is shown. The intensity of the light emitted from the blue LED is measured on the vertical axis 304, and the wavelength is measured on the horizontal axis 302. Figure 3 As shown, the peak intensity 306 of the blue bare LED is significantly higher than the peak intensity of the blue bare LED and one organic semiconductor layer 308, which in turn is higher than the peak intensity of the LED with two organic semiconductor layers 310, and the peak intensity of the LED with two organic semiconductor layers is higher than the peak intensity of the LED with three organic semiconductor layers 312. Figure 3 In the example, each organic semiconductor layer is approximately 200 nm thick. Therefore, it can be seen that high absorption of visible light is achieved with relatively thin material layers. In another example, organic semiconductor layers of varying thicknesses are used to absorb light emission from the emitting pixels, thereby reducing optical crosstalk, for example, by changing the functionality and / or density of the organic semiconductors dispersed in the medium, and / or by using a variety of different organic semiconductors dispersed in the medium to reduce crosstalk.

[0057] Accordingly, crosstalk between individual light-emitting pixels can be eliminated using even very thin layers of light-definable materials comprising dielectrics and organic semiconductors. Advantageously, such materials can be processed on a small scale.

[0058] MicroLEDs 104a, 104b, and 104c are blue-emitting microLEDs. In other examples, alternatively or additionally, different microLEDs with different dominant peak emission wavelengths are used.

[0059] Advantageously, the use of organic semiconductors dispersed in the medium in both the filler 106 and the color conversion layers 108, 110 enables the provision of closely packed pixels in a high-resolution micro-LED array with reduced optical crosstalk between pixels, wherein the pixels are separated by a distance of less than or equal to 2 μm and preferably less than or equal to 1 μm.

Claims

1. A high-resolution micro light-emitting diode array, the array comprising a plurality of light-emitting pixels, wherein, Each of at least two of the plurality of light-emitting pixels includes a light-emitting diode device, and the at least two of the plurality of light-emitting pixels are separated by a distance of less than or equal to 1 μm by a first conjugated organic semiconductor dispersed in a medium, wherein the first conjugated organic semiconductor absorbs light of a first predetermined wavelength, the first predetermined wavelength corresponding to the main peak wavelength of light emitted by at least one of the plurality of light-emitting pixels, and the medium further includes a second conjugated organic semiconductor that absorbs light of a second predetermined wavelength, the second predetermined wavelength being different from the first predetermined wavelength.

2. The array according to claim 1, wherein, At least one of the plurality of light-emitting pixels includes a light conversion layer arranged to receive input light having a dominant peak wavelength and convert the input light into output light having a dominant peak wavelength.

3. The array according to claim 2, wherein, The light conversion layer includes an organic semiconductor that converts the input light into output light.

4. The array according to any of the preceding claims, wherein, The first conjugated organic semiconductor and the second conjugated organic semiconductor each include a plurality of conjugated structures, wherein the plurality of conjugated structures include a core and arms.

5. The array according to any of the preceding claims, wherein, The first predetermined wavelength and the second predetermined wavelength are respectively within their respective predetermined wavelength ranges.

6. The array according to any of the preceding claims, wherein, The medium is at least one of resin and polymer media.

7. The array according to any of the preceding claims, wherein, The array is a high-resolution micro-LED array with a pixel pitch of less than 4 μm.

8. The array according to any of the preceding claims, wherein, Each of the plurality of light-emitting pixels has a size of less than or equal to 16 μm. 2 The luminescent surface.

9. A method for forming a high-resolution micro light-emitting diode array, the array comprising a plurality of light-emitting pixels, wherein at least two of the plurality of light-emitting pixels each comprise a micro light-emitting diode device, and the at least two of the plurality of light-emitting pixels are separated by a distance of less than or equal to 1 μm by a first conjugated organic semiconductor dispersed in a medium, wherein the first conjugated organic semiconductor absorbs light of a first predetermined wavelength, the first predetermined wavelength corresponding to the dominant peak wavelength of light emitted by at least one of the plurality of micro light-emitting diode devices, the medium further comprising a second conjugated organic semiconductor that absorbs light of a second predetermined wavelength, the second predetermined wavelength being different from the first predetermined wavelength.

10. The method according to claim 9, wherein, At least one of the plurality of light-emitting pixels includes a light conversion layer arranged to receive input light having a dominant peak wavelength and convert the input light into output light having a dominant peak wavelength.

11. The method according to claim 10, wherein, The light conversion layer includes an organic semiconductor that converts the input light into output light.

12. The method according to any one of claims 9 to 11, wherein, The first conjugated organic semiconductor and the second conjugated organic semiconductor each include a plurality of conjugated structures, wherein the plurality of conjugated structures include a core and arms.

13. The method according to any one of claims 9 to 12, wherein, The first predetermined wavelength and the second predetermined wavelength are respectively within their respective predetermined wavelength ranges.

14. The method according to any one of claims 9 to 13, wherein, The medium is at least one of resin and polymer media.

15. The method according to any one of claims 9 to 14, wherein, The array is a high-resolution micro-LED array with a pixel pitch of less than 4 μm.

16. The method according to any one of claims 9 to 15, wherein, Each of the plurality of light-emitting pixels has a size of less than or equal to 16 μm. 2 The luminescent surface.