Control method of control line, control line, controller and control system

Abstract

The embodiment of the present application provides a control method of a control circuit, a control circuit, a controller and a control system, and the method comprises the following steps: receiving an input current transmitted by an input end of a control system to a control circuit, wherein the control circuit at least comprises a driving unit, a first metal oxide semiconductor field effect transistor and a second metal oxide semiconductor field effect transistor; controlling the driving unit to output a first signal according to the input current; detecting a voltage between the first metal oxide semiconductor field effect transistor and the second metal oxide semiconductor field effect transistor; when the voltage is greater than or equal to a preset voltage, controlling the driving unit to output a second signal; and when the first metal oxide semiconductor field effect transistor and the second metal oxide semiconductor field effect transistor both satisfy a preset condition, completing the control of the control circuit. Through the present application, the problem that the control circuit in the prior art has high cost because multiple metal oxide semiconductor field effect transistors are connected in parallel under the condition of a large current is solved, and the effect of reducing cost is achieved.

Description

Technical Field

[0001] This application relates to the field of circuit control, and more specifically, to a control method, control circuit, controller, and control system for a control circuit. Background Technology

[0002] With the development of cloud computing applications, information technology is gradually covering all aspects of society. People are increasingly communicating through the internet in their daily work and life, and the amount of network data is constantly increasing. Rack servers are also gradually being used on a large scale in data centers, making hot-swappable maintenance of servers in rack servers particularly important.

[0003] Currently, hot-swapping primarily relies on controlling the power MOSFET to slowly turn on and control surge current. Traditional control methods place high demands on the SOA (State of Charge) of the power MOSFET, especially under high-current conditions. Often, multiple MOSFETs need to be connected in parallel to suppress temperature rise and ensure they operate within the SOA range. Therefore, traditional control methods suffer from excessive cost.

[0004] There is currently no effective solution to the above problems. Summary of the Invention

[0005] This application provides a control method, control circuit, controller, and control system for a control circuit, which at least solves the problem of excessive cost in related technologies when using multiple metal-oxide-semiconductor field-effect transistors in parallel under high current conditions.

[0006] According to one embodiment of this application, a control method for a control circuit is provided, comprising: receiving an input current transmitted from the input terminal of a control system to the control circuit, wherein the control circuit includes at least a driving unit, a first metal-oxide-semiconductor (MOSFET) transistor, and a second MOSFET; controlling the driving unit to output a first signal based on the input current, wherein the first signal is used to turn on the first MOSFET; detecting the voltage between the first MOSFET and the second MOSFET, wherein the first MOSFET and the second MOSFET are connected in series to form a series structure, and the connection directions of the first MOSFET and the second MOSFET in the series structure are opposite; when the voltage is greater than or equal to a preset voltage, controlling the driving unit to output a second signal, wherein the second signal is used to turn on the second MOSFET; and completing the control of the control circuit when both the first MOSFET and the second MOSFET meet preset conditions.

[0007] In one exemplary embodiment, the driving unit includes an operational amplifier and a gate driving circuit. The output terminal of the operational amplifier is connected to the gate driving circuit to amplify the current input to the operational amplifier.

[0008] In one exemplary embodiment, the gate drive circuit is connected to a first metal-oxide-semiconductor field-effect transistor via a first line for transmitting a first signal, and the gate drive circuit is connected to a second metal-oxide-semiconductor field-effect transistor via a second line for transmitting a second signal.

[0009] In one exemplary embodiment, the gate drive circuit is connected to the series structure via a third line, and the voltage between the first MOSFET and the second MOSFET is detected by a sensor in the third line.

[0010] In one exemplary embodiment, the control circuitry further includes a current limiting circuit for transmitting the current transmitted from the input terminal to the drain of the first metal-oxide-semiconductor field-effect transistor.

[0011] In an exemplary embodiment, when both the first metal-oxide-semiconductor (MOSFET) and the second MOSFET meet preset conditions, control of the control circuit is completed, including: acquiring the first drain voltage and the first source voltage of the first MOSFET, and acquiring the second source voltage and the second drain voltage of the second MOSFET; when the first drain voltage is equal to the first source voltage and the second drain voltage is equal to the second source voltage, control of the control circuit is completed.

[0012] According to another embodiment of this application, a control circuit is provided, including: a gate drive circuit, a first metal-oxide-semiconductor (MOSFET) transistor, and a second MOSFET. The gate drive circuit is connected to the first MOSFET via a first line, and the gate drive circuit is connected to the second MOSFET via a second line. The first MOSFET and the second MOSFET are connected in series to form a series structure, and the connection directions of the first MOSFET and the second MOSFET in the series structure are opposite.

[0013] In one exemplary embodiment, the control circuitry further includes an operational amplifier, the output of which is connected to a gate drive circuit to amplify the current input to the operational amplifier.

[0014] In one exemplary embodiment, the gate drive circuit is connected to the series structure via a third line, and the voltage between the first MOSFET and the second MOSFET is detected by a sensor in the third line.

[0015] In one exemplary embodiment, the control circuitry further includes a current limiting circuit for transmitting current transmitted from the input of the control system to the drain of the first metal-oxide-semiconductor field-effect transistor.

[0016] According to another embodiment of this application, a controller is provided for executing the control method of the above-described control circuit.

[0017] According to another embodiment of this application, a control system is provided, the control system including a controller for executing the control method of the above-described control circuit.

[0018] This application connects a first MOSFET and a second MOSFET in series to form a series structure. The first and second MOSFETs in this series structure are connected in opposite directions. Based on the input current transmitted from the input terminal of the control system, the drive unit outputs different signals to control the activation of the first and second MOSFETs. When the voltages across both the first and second MOSFETs meet preset conditions, control of the control circuit is achieved. Therefore, this solves the problem of excessive cost associated with using multiple MOSFETs in parallel under high current conditions in existing technologies, achieving the technical effects of simplifying the circuit and reducing costs. Attached Figure Description

[0019] Figure 1 This is a topology diagram of a hot-swappable circuit in the related technology according to embodiments of this application;

[0020] Figure 2 This is a flowchart of a control method for a control circuit according to an embodiment of this application;

[0021] Figure 3 This is a structural diagram of a control circuit according to an embodiment of this application. Detailed Implementation

[0022] The embodiments of this application will be described in detail below with reference to the accompanying drawings and examples.

[0023] It should be noted that the terms "first," "second," etc., in the specification, claims, and drawings of this application are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence.

[0024] First, some nouns or terms that appear in the explanation of the embodiments of this application shall be interpreted as follows:

[0025] Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is a type of field-effect transistor that can be widely used in analog and digital circuits.

[0026] Service-Oriented Architecture (SOA) is a component model that breaks down an application into different functional units (called services) and connects them through well-defined interfaces and protocols. These interfaces are defined in a neutral manner, independent of the hardware platform, operating system, and programming language used to implement the service. This allows services built on a wide variety of systems to interact in a unified and universal way.

[0027] A charge pump, also known as a switched-capacitor voltage converter, is a DC-DC converter that uses a "flying" or "pumping" capacitor (not an inductor or transformer) to store energy. A charge pump can increase or decrease the input voltage and can also be used to generate negative voltages. Its internal FET switching array controls the charging or discharging of the fast capacitor in a specific way, thereby increasing or decreasing the input voltage by a factor (such as 1 / 2, 2, or 3) to ultimately obtain the desired output voltage.

[0028] In related technologies, hot-swappable power supply utilizes a hot-swappable controller, a set of MOSFETs, and precision resistors to form a hot-swappable circuit. The controller controls the rise time of the gate of the MOSFET, enabling the MOSFET to turn on slowly, thereby suppressing the inrush current during the hot-swappable process and achieving hot-swappable power supply.

[0029] However, in the aforementioned related technologies, the hot-swap circuits require many high-SOA power MOSFETs to operate within the SOA range under high current conditions, resulting in excessively high material costs. Furthermore, in these related technologies, each MOSFET in a group is connected in parallel. When multiple MOSFETs are connected in parallel, uneven current distribution can easily occur when large currents are applied, potentially leading to MOSFET failure due to overcurrent in extreme cases.

[0030] The topology of hot-swappable circuits in related technologies is as follows: Figure 1 As shown, a hot-swappable circuit mainly consists of: precision resistors, power MOSFETs, operational amplifiers, charge pumps, gate drive circuits, and loads. Figure 1 Only one power MOSFET is shown. In high-current applications, this structure typically requires multiple power MOSFETs connected in parallel, with all MOSFETs oriented in the same direction. This means the gate, source, and drain of the multiple MOSFETs are in the same orientation. Connecting multiple MOSFETs in parallel helps suppress the temperature rise of the MOSFET due to inrush current. If the MOSFET is not properly selected, it could potentially cause over-SOA operation during turn-on, leading to MOSFET failure.

[0031] In order to solve the above-mentioned problems in the related technologies, this application provides corresponding solutions, which are described in detail below.

[0032] Figure 2 This is a flowchart of a control method for a control circuit according to an embodiment of this application, such as... Figure 2 As shown, the method flow includes the following steps:

[0033] Step S202: Receive the input current transmitted from the input terminal of the control system to the control circuit, wherein the control circuit includes at least a drive unit, a first metal-oxide-semiconductor field-effect transistor, and a second metal-oxide-semiconductor field-effect transistor.

[0034] Step S204: The drive unit is controlled to output a first signal based on the input current, wherein the first signal is used to turn on the first metal-oxide-semiconductor field-effect transistor.

[0035] Step S206: Detect the voltage between the first metal-oxide-semiconductor field-effect transistor (MOSFET) and the second MOSFET, wherein the first MOSFET and the second MOSFET are connected in series to form a series structure, and the connection directions of the first MOSFET and the second MOSFET in the series structure are opposite.

[0036] In step S206 above, the first MOSFET and the second MOSFET are connected in opposite directions in the series structure. This can be understood as the first MOSFET and the second MOSFET being connected back-to-back in the series structure, meaning the source and drain of the first MOSFET are opposite to the source and drain of the second MOSFET. In an optional embodiment, the source and drain of the first MOSFET and the source and drain of the second MOSFET are connected in the following order in the series structure: drain of the first MOSFET, source of the first MOSFET, source of the second MOSFET, drain of the second MOSFET. The drain of the first MOSFET is connected to the input terminal of the control circuit, and the drain of the second MOSFET is connected to the output terminal of the control circuit.

[0037] Step S208: When the voltage is greater than or equal to the preset voltage, the control drive unit outputs a second signal, wherein the second signal is used to turn on the second metal-oxide-semiconductor field-effect transistor.

[0038] Step S210: When both the first metal-oxide-semiconductor (MOSFET) and the second MOSFET meet the preset conditions, the control circuit is controlled.

[0039] In steps S202 to S210 above, under normal circumstances, the current first passes through the first MOSFET and then the second MOSFET. Therefore, when current is input to the input terminal of the control system, the drive unit is first controlled to output a first signal, that is, the first MOSFET is first controlled to start softly. When the voltage across the first MOSFET is greater than or equal to the preset voltage of the first MOSFET, the drive unit is then controlled to output a second signal to cause the second MOSFET to start softly.

[0040] Through the above steps, the first MOSFET and the second MOSFET are connected in series to form a series structure. In this series structure, the first MOSFET and the second MOSFET are connected in opposite directions. According to the input current transmitted from the input terminal of the control system, the drive unit outputs different signals, thereby controlling the first MOSFET and the second MOSFET to turn on. When the voltages across the first MOSFET and the second MOSFET both meet the preset conditions, the control circuit is controlled. Therefore, this solves the problem of excessive cost caused by using multiple MOSFETs in parallel under high current conditions in the existing technology, achieving the technical effect of simplifying the circuit and reducing costs.

[0041] In the control method of the above control circuit, the driving unit includes an operational amplifier and a gate drive circuit. The output terminal of the operational amplifier is connected to the gate drive circuit to amplify the current input to the operational amplifier.

[0042] In this embodiment, the input of the operational amplifier is the input current transmitted from the input terminal of the control system to the control circuit. After being amplified by the operational amplifier, it is transmitted to the gate drive circuit.

[0043] In the control method of the above control circuit, the gate drive circuit is connected to the first metal-oxide-semiconductor field-effect transistor through the first line, which is used to transmit the first signal. The gate drive circuit is connected to the second metal-oxide-semiconductor field-effect transistor through the second line, which is used to transmit the second signal.

[0044] In this embodiment, the gate drive circuit is connected to the first metal-oxide-semiconductor (MOSFET) and the second MOSFET via different lines. Specifically, the gate drive circuit is connected to the gate of the first MOSFET via a first line and to the gate of the second MOSFET via a second line. The first line is used to transmit a first signal, which can be denoted as Driver1, and the second line is used to transmit a second signal, which can be denoted as Driver2. Both the first and second signals are control signals.

[0045] When current flows through the control circuit, the control circuit is in the open state. The current in the circuit is equivalent to the start signal. After receiving the start signal, the gate drive circuit first transmits the first signal to the first metal-oxide-semiconductor field-effect transistor through the first line. That is, the gate drive circuit first enables the Driver1 signal to control the first metal-oxide-semiconductor field-effect transistor to start softly.

[0046] When the voltage across the first MOSFET, i.e., the voltage between the source and drain of the first MOSFET, is greater than or equal to a preset voltage, the gate drive circuit in the control unit outputs a second signal through the second line, i.e., the gate drive circuit enables the Driver2 signal. It should be noted that the preset voltage should be less than the input voltage of the entire control circuit.

[0047] In the control method of the above control circuit, the gate drive circuit is connected to the series structure through the third line, and the voltage between the first metal-oxide-semiconductor field-effect transistor and the second metal-oxide-semiconductor field-effect transistor is detected by the sensor in the third line.

[0048] In this embodiment, since the first MOSFET and the second MOSFET are connected in series, and the source voltage of the first MOSFET and the drain voltage of the second MOSFET are the same, the sensor in the third circuit detects the voltage between the first MOSFET and the second MOSFET, that is, detects the source voltage of the first MOSFET or the drain voltage of the second MOSFET. The sensor in the third circuit can be, for example, a voltage sense PIN in the gate drive circuit, and the voltage between the first MOSFET and the second MOSFET is detected through the voltage sense PIN.

[0049] In the control method of the above control circuit, the control circuit also includes a current limiting circuit, which is used to transfer the current transmitted from the input terminal to the drain of the first metal-oxide-semiconductor field-effect transistor.

[0050] In this embodiment of the application, in order to prevent excessive current in the input control circuit from burning out the components, a current limiting circuit needs to be added to the circuit. For example, a resistor can be connected in series at the input terminal of the control circuit to protect the circuit. The current passing through the current limiting circuit will be transmitted to the drain of the first metal-oxide-semiconductor field-effect transistor.

[0051] In step S210 of the control method for the control circuit described above, when both the first metal-oxide-semiconductor (MOSFET) and the second MOSFET meet preset conditions, the control circuit is controlled. Specifically, this includes the following steps: obtaining the first drain voltage and the first source voltage of the first MOSFET, and obtaining the second source voltage and the second drain voltage of the second MOSFET; when the first drain voltage is equal to the first source voltage and the second drain voltage is equal to the second source voltage, the control circuit is controlled.

[0052] In this embodiment, the gate drive circuit of the driving unit outputs a first signal Driver1, causing the first metal-oxide-semiconductor field-effect transistor (MOSFET) to be in a soft-start state. At this time, the source voltage of the first MOSFET (i.e., the aforementioned first source voltage) gradually increases, causing the voltage difference across the first MOSFET to gradually decrease. That is, the voltage difference between the drain voltage of the first MOSFET (i.e., the aforementioned first drain voltage) and the source voltage of the first MOSFET (i.e., the aforementioned first source voltage) gradually decreases. When the voltage difference decreases to a predetermined value, that is, when the first source voltage rises to a value greater than or equal to a preset voltage, the gate drive circuit of the driving unit... The first signal Driver2 from the drive circuit puts the second MOSFET into a soft-start state. Meanwhile, the first signal Driver1 continues to drive the first MOSFET, fully turning it on. In this state, the voltage difference between the source and drain voltages of the second MOSFET (i.e., the second source voltage) is less than the input voltage of the entire control circuit. Under these conditions, the surge current generated by the control circuit charging the load capacitor is less than that of a traditional control circuit. As Driver2 continues to drive the second MOSFET, it eventually fully starts up. At this point, the drain voltage (i.e., the output voltage of the control circuit) is equal to the input voltage of the control circuit; that is, the first drain voltage equals the first source voltage, and the second drain voltage equals the second source voltage. This completes the control circuit's operation, achieving hot-swap soft-start.

[0053] The control method of the control circuit provided in this application divides the entire soft start operation into two steps:

[0054] Step 1: Since there is no load capacitor at the back end of the first metal-oxide-semiconductor field-effect transistor, when the first signal Driver1 is activated, the surge current generated on the first metal-oxide-semiconductor field-effect transistor is very small, and the source voltage (i.e. the first source voltage) of the first metal-oxide-semiconductor field-effect transistor rises slowly.

[0055] Step 2: When the first source voltage rises to a suitable voltage level, the driving unit enables the second signal Driver2, turning on the second MOSFET. Under these conditions, the voltage across the second MOSFET (i.e., the voltage difference between the second source voltage and the second drain voltage) is much smaller than the input voltage of the control circuit. Since the drain of the second MOSFET is the output terminal of the control circuit, directly connected to the load and the corresponding load capacitor, the surge current generated on the second MOSFET under these conditions will be much smaller than that of the traditional soft-start method.

[0056] Therefore, by dividing the slow-start circuit into two parts through the control method of the control circuit in this embodiment, there is basically no surge current when the first metal-oxide-semiconductor field-effect transistor (MOSFET) is turned on. When the second MOSFET is turned on, since the voltage across the second MOSFET is less than the input voltage of the control circuit, the surge current generated on the first and second MOSFETs will be greatly reduced. Under this condition, the SOA of the first and second MOSFETs will be wider than that of the traditional method.

[0057] Through the above description of the embodiments, those skilled in the art can clearly understand that the methods according to the above embodiments can be implemented by means of software plus necessary general-purpose hardware platforms. Of course, they can also be implemented by hardware, but in many cases the former is a better implementation method. Based on this understanding, the technical solution of this application, in essence, or the part that contributes to the prior art, can be embodied in the form of a software product. This computer software product is stored in a storage medium (such as ROM / RAM, magnetic disk, optical disk) and includes several instructions to cause a terminal device (which may be a mobile phone, computer, server, or network device, etc.) to execute the methods described in the various embodiments of this application.

[0058] Figure 3 This is a structural diagram of a control circuit according to an embodiment of this application, such as... Figure 3 As shown, the control circuit includes:

[0059] The circuit includes a gate drive circuit 301, a first metal-oxide-semiconductor field-effect transistor (MOSFET) 302 (Q1), and a second MOSFET 303 (Q2). The gate drive circuit is connected to the first MOSFET via a first line 304 and to the second MOSFET via a second line 305. The first and second MOSFETs are connected in series to form a series structure, and their connection directions are opposite.

[0060] In the control circuit described in the embodiments of this application, the first MOSFET and the second MOSFET are connected in opposite directions in the series structure. This can be understood as the first MOSFET and the second MOSFET being connected back-to-back in the series structure, meaning the source and drain of the first MOSFET are opposite to the source and drain of the second MOSFET. In an optional embodiment, the order of the source and drain of the first MOSFET and the source and drain of the second MOSFET in the series structure is the drain of the first MOSFET (i.e.,...). Figure 3 Point A in the diagram), the source of the first metal-oxide-semiconductor field-effect transistor (i.e., point A in the diagram), and the source of the first metal-oxide-semiconductor field-effect transistor (i.e., point A in the diagram). Figure 3 Point B in the diagram), the source of the second metal-oxide-semiconductor field-effect transistor (i.e., point B in the diagram), and the source of the second metal-oxide-semiconductor field-effect transistor (i.e., point B in the diagram). Figure 3 Point B in the diagram), the drain of the second metal-oxide-semiconductor field-effect transistor (i.e., point B in the diagram), and the drain of the second metal-oxide-semiconductor field-effect transistor (i.e., point B in the diagram). Figure 3 (Point C in the diagram), the drain of the first metal-oxide-semiconductor field-effect transistor is connected to the input terminal of the control circuit, and the drain of the second metal-oxide-semiconductor field-effect transistor is connected to the output terminal of the control circuit.

[0061] In this embodiment, under normal circumstances, the current first passes through the first MOSFET and then the second MOSFET. Therefore, when current is input to the input terminal of the control system, the gate drive circuit is first controlled to output a first signal, that is, the first MOSFET is first controlled to start softly. When the voltage across the first MOSFET is greater than or equal to the preset voltage of the first MOSFET, the gate drive circuit is then controlled to output a second signal to cause the second MOSFET to start softly.

[0062] Specifically, the gate drive circuit is connected to the gate of the first MOSFET via a first line, and to the gate of the second MOSFET via a second line. The first line transmits a first signal, denoted as Driver1, and the second line transmits a second signal, denoted as Driver2. Both the first and second signals are control signals. When current flows through the control line, the control line is in the open state, and the current in the line is equivalent to the start signal. After receiving the start signal, the gate drive circuit first transmits the first signal to the first MOSFET via the first line, that is, the gate drive circuit first enables the Driver1 signal, controlling the first MOSFET to start softly. When the voltage across the first MOSFET, that is, the voltage between the source and drain of the first MOSFET, is greater than or equal to a preset voltage, the gate drive circuit in the drive unit then outputs the second signal via the second line, that is, the gate drive circuit enables the Driver2 signal. It should be noted that the preset voltage should be less than the input voltage of the entire control line.

[0063] In the aforementioned control circuit, the first MOSFET and the second MOSFET are connected in series to form a series structure. The first and second MOSFETs in this series structure are connected in opposite directions. Based on the input current transmitted from the input terminal of the control system, the gate drive circuit sequentially outputs a first signal and a second signal, thereby controlling the activation of the first and second MOSFETs. When the voltages across both the first and second MOSFETs meet preset conditions, the control circuit is controlled. Therefore, this solves the problem of excessively high costs associated with using multiple MOSFETs in parallel under high current conditions in existing control circuits, achieving the technical effects of simplifying the circuit and reducing costs.

[0064] In the above control circuit, the control circuit also includes an operational amplifier 306. The output terminal of the operational amplifier is connected to the gate drive circuit and is used to amplify the current input to the operational amplifier.

[0065] In this embodiment, the input of the operational amplifier is the input current transmitted from the input terminal of the control system to the control circuit. After being amplified by the operational amplifier, it is transmitted to the gate drive circuit.

[0066] In the above control circuit, the gate drive circuit is connected to the series structure through the third line 307, and the voltage between the first metal-oxide-semiconductor field-effect transistor and the second metal-oxide-semiconductor field-effect transistor is detected by the sensor in the third line.

[0067] In this embodiment, since the first MOSFET and the second MOSFET are connected in series, and the source voltage of the first MOSFET and the drain voltage of the second MOSFET are the same, the sensor in the third circuit detects the voltage between the first MOSFET and the second MOSFET, that is, it detects the source voltage of the first MOSFET or the drain voltage of the second MOSFET. The sensor in the third circuit can be, for example, a voltage sense PIN in a gate drive circuit. Figure 3 The B sense in the process detects the voltage between the first MOSFET and the second MOSFET, i.e., it detects... Figure 3 The voltage at point B in the diagram.

[0068] In the above control circuit, the control circuit also includes a current limiting circuit 308, which is used to transmit the current transmitted from the input terminal of the control system to the drain of the first metal-oxide-semiconductor field-effect transistor.

[0069] In this embodiment of the application, in order to prevent excessive current in the input control circuit from burning out the components, a current limiting circuit needs to be added to the circuit. For example, a resistor can be connected in series at the input terminal of the control circuit to protect the circuit. The current passing through the current limiting circuit will be transmitted to the drain of the first metal-oxide-semiconductor field-effect transistor.

[0070] During the control process of the aforementioned control circuit, when an input current is present in the control circuit, the control circuit is activated, and the gate drive circuit outputs the first signal Driver1, causing the first metal-oxide-semiconductor field-effect transistor (MOSFET) to enter a soft-start state. At this time, the source voltage (i.e., the first source voltage) of the first MOSFET gradually increases, causing the voltage difference across the first MOSFET to gradually decrease. That is, the voltage difference between the drain voltage (i.e., the first drain voltage) and the source voltage (i.e., the first source voltage) of the first MOSFET (i.e., the first source voltage) is reduced. Figure 3 U in AB The voltage difference gradually decreases. When the voltage difference decreases to a predetermined value, that is, when the first source voltage rises to a value greater than or equal to a preset voltage, the gate drive circuit outputs the second signal Driver2, causing the second metal-oxide-semiconductor field-effect transistor (MOSFET) to enter a soft-start state. At this time, the first signal Driver1 continues to drive the first MOSFET, causing the first MOSFET to be fully turned on. In this state, the voltage across the second MOSFET, that is, the voltage difference between the source voltage (i.e., the second source voltage) and the drain voltage (i.e., the second drain voltage) of the second MOSFET (i.e. ... of the second MOSFET), is... Figure 3 U in BCThe surge current generated by charging the load capacitor through this control circuit is less than the input voltage of the entire control circuit. Under this condition, the surge current generated by the control circuit is less than that of the traditional control circuit. As the second signal Driver2 continuously drives the second metal-oxide-semiconductor field-effect transistor, the second metal-oxide-semiconductor field-effect transistor is eventually fully started. At this time, the drain voltage of the second metal-oxide-semiconductor field-effect transistor (i.e., the output voltage of the control circuit) is equal to the input voltage of the control circuit. That is, the first drain voltage is equal to the first source voltage, and the second drain voltage is equal to the second source voltage, thereby completing the control of the control circuit and realizing the hot-plug soft start operation.

[0071] The control circuit provided in this application embodiment can divide the entire soft start operation into two steps:

[0072] Step 1: Since there is no load capacitor at the back end of the first metal-oxide-semiconductor field-effect transistor, when the first signal Driver1 is activated, the surge current generated on the first metal-oxide-semiconductor field-effect transistor is very small, and the source voltage (i.e. the first source voltage) of the first metal-oxide-semiconductor field-effect transistor rises slowly.

[0073] Step 2: When the first source voltage rises to a suitable voltage level, the gate drive circuit enables the second signal Driver2, turning on the second MOSFET. Under these conditions, the voltage across the second MOSFET (i.e., the voltage difference between the second source voltage and the second drain voltage) is much smaller than the input voltage of the control circuit. Since the drain of the second MOSFET is the output terminal of the control circuit, directly connected to the load and the corresponding load capacitor, the surge current generated on the second MOSFET under these conditions will be much smaller than that of the traditional soft-start method.

[0074] Therefore, by dividing the slow-start circuit into two parts through the operation of the control circuit in this embodiment, there is basically no surge current when the first metal-oxide-semiconductor field-effect transistor (MOSFET) is turned on. When the second MOSFET is turned on, since the voltage across the second MOSFET is less than the input voltage of the control circuit, the surge current generated on the first and second MOSFETs will be greatly reduced. Under this condition, the SOA (Side Array of Aspects) when selecting the first and second MOSFETs will be wider than in the traditional method.

[0075] Specific examples in this embodiment can be found in the examples described in the above embodiments and exemplary implementations, and will not be repeated here.

[0076] This application also provides a controller for executing the control method of the above-described control circuit. Therefore, the relevant explanations and descriptions in the control method of the above-described control circuit also apply to this controller, and will not be repeated here.

[0077] This application also provides a control system, which includes a controller for executing the control method of the above-described control circuit. Therefore, the relevant explanations and descriptions in the control method of the above-described control circuit also apply to this control system, and will not be repeated here.

[0078] Obviously, those skilled in the art should understand that the modules or steps of this application described above can be implemented using general-purpose computing devices. They can be centralized on a single computing device or distributed across a network of multiple computing devices. They can be implemented using computer-executable program code, and thus can be stored in a storage device for execution by a computing device. In some cases, the steps shown or described can be performed in a different order than those presented here, or they can be fabricated as separate integrated circuit modules, or multiple modules or steps can be fabricated as a single integrated circuit module. Thus, this application is not limited to any particular combination of hardware and software.

[0079] The above description is merely a preferred embodiment of this application and is not intended to limit this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the principles of this application should be included within the protection scope of this application.

Claims

1. A control method for a control circuit, characterized in that, include: The system receives input current transmitted from the input terminal of the control system to the control circuit, wherein the control circuit includes at least a drive unit, a first metal-oxide-semiconductor field-effect transistor, and a second metal-oxide-semiconductor field-effect transistor. The driving unit is controlled to output a first signal based on the input current to control the first metal-oxide-semiconductor field-effect transistor to be in a soft-start state, wherein the first signal is used to turn on the first metal-oxide-semiconductor field-effect transistor. The voltage between the first metal-oxide-semiconductor field-effect transistor (MOSFET) and the second MOSFET is detected, wherein the first MOSFET and the second MOSFET are connected in series to form a series structure, and the connection directions of the first MOSFET and the second MOSFET in the series structure are opposite. When the voltage is greater than or equal to a preset voltage, the driving unit is controlled to output a second signal to control the second metal-oxide-semiconductor field-effect transistor to be in a soft-start state, wherein the second signal is used to turn on the second metal-oxide-semiconductor field-effect transistor; When the second metal-oxide-semiconductor field-effect transistor is in a slow-start state, the driving unit is controlled to continue outputting the first signal so that the first metal-oxide-semiconductor field-effect transistor is fully turned on. The driving unit is controlled to continue outputting the second signal so that the second metal-oxide-semiconductor field-effect transistor is fully turned on; With both the first metal-oxide-semiconductor field-effect transistor and the second metal-oxide-semiconductor field-effect transistor fully turned on, the control circuit is controlled.

2. The method according to claim 1, characterized in that, The driving unit includes an operational amplifier and a gate driving circuit. The output terminal of the operational amplifier is connected to the gate driving circuit to amplify the current input to the operational amplifier.

3. The method according to claim 2, characterized in that, The gate drive circuit is connected to the first metal-oxide-semiconductor field-effect transistor via a first line, the first line being used to transmit the first signal. The gate drive circuit is connected to the second metal-oxide-semiconductor field-effect transistor via a second line, the second line being used to transmit the second signal.

4. The method according to claim 2, characterized in that, The gate drive circuit is connected to the series structure through a third line, and the voltage between the first metal-oxide-semiconductor field-effect transistor and the second metal-oxide-semiconductor field-effect transistor is detected by a sensor in the third line.

5. The method according to claim 1, characterized in that, The control circuit also includes a current limiting circuit, which is used to transmit the current transmitted from the input terminal to the drain of the first metal-oxide-semiconductor field-effect transistor.

6. The method according to claim 1, characterized in that, When both the first metal-oxide-semiconductor (MOSFET) and the second MOSFET meet preset conditions, control of the control circuit is completed, including: Obtain the first drain voltage and the first source voltage of the first metal-oxide-semiconductor field-effect transistor, and obtain the second source voltage and the second drain voltage of the second metal-oxide-semiconductor field-effect transistor; When the first drain voltage is equal to the first source voltage and the second drain voltage is equal to the second source voltage, the control circuit is controlled.

7. A control circuit, characterized in that, include: Gate drive circuit, first metal-oxide-semiconductor field-effect transistor and second metal-oxide-semiconductor field-effect transistor, wherein, The gate drive circuit is connected to the first metal-oxide-semiconductor field-effect transistor via a first line, and the gate drive circuit is connected to the second metal-oxide-semiconductor field-effect transistor via a second line. The first metal-oxide-semiconductor field-effect transistor and the second metal-oxide-semiconductor field-effect transistor are connected in series to form a series structure, and the connection directions of the first metal-oxide-semiconductor field-effect transistor and the second metal-oxide-semiconductor field-effect transistor in the series structure are opposite. The gate drive circuit is connected to the series structure through a third line, and the voltage between the first metal-oxide-semiconductor field-effect transistor and the second metal-oxide-semiconductor field-effect transistor is detected by a sensor in the third line. The control circuit is used to control the gate drive circuit to output a first signal based on the input current to control the first metal-oxide-semiconductor (MOSFET) to be in a soft-start state, wherein the first signal is used to turn on the first MOSFET; when the voltage between the first MOSFET and the second MOSFET is greater than or equal to a preset voltage, the gate drive circuit is controlled to output a second signal to control the second MOSFET to be in a soft-start state, wherein the second signal is used to turn on the second MOSFET, and the preset voltage is less than the input voltage of the control circuit; when the second MOSFET is in a soft-start state, the gate drive circuit is controlled to continue outputting the first signal to fully turn on the first MOSFET; the gate drive circuit is controlled to continue outputting the second signal to fully turn on the second MOSFET; when both the first MOSFET and the second MOSFET are fully turned on, the control circuit is controlled.

8. The control circuit according to claim 7, characterized in that, The control circuit also includes an operational amplifier, the output of which is connected to the gate drive circuit to amplify the current input to the operational amplifier.

9. The control circuit according to claim 7, characterized in that, The control circuit also includes a current limiting circuit, which is used to transmit the current transmitted from the input terminal of the control system to the drain of the first metal-oxide-semiconductor field-effect transistor.

10. A controller, characterized in that, The controller is used to execute the control method of the control circuit according to any one of claims 1 to 6.

11. A control system, characterized in that, The control system includes a controller, which is used to execute the control method of the control circuit according to any one of claims 1 to 6.

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