Perovskite-polymer composite, preparation method and perovskite solar cell

Abstract

The present application relates to a kind of perovskite-polymer composite material, preparation method and perovskite solar cell, belong to perovskite solar cell technical field.By adding acrylic polymer monomer and initiator to perovskite precursor BX compound solution, the solution obtained is coated on substrate, polymer monomer is polymerized by heating, and BX compound film containing polymer is obtained on substrate;Perovskite precursor A-site cation solution is coated on the BX compound film containing polymer, and a kind of perovskite-polymer composite material is obtained by heating annealing.The material can effectively alleviate mechanical stress to inhibit the cracking and delamination of perovskite film, improve the mechanical stability of perovskite solar cell.

Description

TECHNICAL FIELD

[0001] The present application relates to a perovskite-polymer composite material, a preparation method and a perovskite solar cell, and belongs to the technical field of perovskite solar cells. BACKGROUND

[0002] In recent years, with the growth of global population and the development of economy, the demand for energy is increasing day by day. As a clean and renewable energy, solar energy will play an important role in the energy structure. Among various technologies for effectively utilizing solar energy, photovoltaic power generation is undoubtedly one of the most promising directions. Organic / inorganic hybrid perovskite solar cells have developed rapidly in recent years, with a photoelectric conversion efficiency from 3.8% at the beginning to 25.7% now, which has caught up with the efficiency of crystalline silicon solar cells. As the third generation of high-efficiency new concept batteries, due to the rich reserves of raw materials, simple preparation process, and the use of low-temperature and low-cost process to prepare high-quality thin films and many other advantages, it has attracted the attention of many researchers.

[0003] However, the stability problem of the perovskite battery limits its industrialization development. As an ionic crystal, perovskite is sensitive to temperature, humidity, light, oxygen and mechanical force, etc. Under the action of these factors, perovskite will present different degrees of phase change and degradation, and even decompose into metal halide products without optical activity. Especially in the process of alternating temperature changes in thermal cycles, due to the difference in thermal expansion coefficient between perovskite and the base layer, the thermal stress difference will cause the cracking and even delamination of the perovskite thin film, which seriously affects the performance of the battery and eventually leads to the failure of the device. Therefore, improving the stability of perovskite is of great significance to promote the industrialization of perovskite solar cells.

[0004] Currently, the influence of water and oxygen can be isolated to a certain extent through external packaging means, and the damage caused by light and heat can be alleviated to a certain extent through ultraviolet filters and blocking layers. However, there is no effective solution to the mechanical stress during operation and the release of mechanical stress during thermal cycle aging, which restricts the development of perovskite solar cells. Therefore, it is urgent to find a new strategy to alleviate mechanical stress and ultimately improve the long-term stability of perovskite solar cells. Due to the excellent mechanical properties, thermal properties, dielectric properties and light resistance of polymers, some studies believe that polymers are a feasible method to improve the related properties of perovskite films and thus improve the operational stability of perovskite solar cells. Some articles report that polymer molecules are directly added to the precursor solution, but due to the strong interaction between the macromolecular structure of the polymer and lead iodide, precipitation will occur in the perovskite precursor solution, which may increase the nucleation sites and reduce the grain size, making it difficult to form a uniform polymer-doped perovskite film, resulting in unsatisfactory results. In Chinese patent application 202011335946.5, acrylamide monomers, vinyl pyrrolidone monomers or styrene monomers are added to the precursor solution to heat the polymer to obtain a perovskite thin film layer and a perovskite component, which effectively passivates the interface defects of the perovskite crystal. However, the introduced polymer molecules cannot form a bonding effect with the perovskite components, and cannot improve the stability of the device during thermal cycle aging. SUMMARY

[0005] Therefore, the purpose of the present application is to provide a perovskite-polymer composite material, a preparation method and a perovskite solar cell. By adding polymer monomers that can form a bonding effect with perovskite to the precursor solution, on the one hand, the problem of perovskite film formation is solved, and on the other hand, the bonding effect makes the polymer component able to alleviate the mechanical stress caused by cold and heat alternation during the aging process, thereby improving the stability of the device. The material can effectively alleviate the mechanical stress and inhibit the cracking and delamination of the perovskite thin film, thereby improving the mechanical stability of the perovskite solar cell.

[0006] To achieve the above-mentioned purpose, the technical solutions of the present application are as follows:

[0007] A preparation method of a perovskite-polymer composite material, the method steps comprising:

[0008] (1) adding an acrylic polymer monomer and an initiator to a perovskite precursor BX compound solution to obtain a solution, coating the solution on a substrate, and heating to polymerize the polymer monomer to obtain a BX compound thin film containing a polymer on the substrate;

[0009] (2) coating a perovskite precursor A-site cation solution on the BX compound thin film containing a polymer, and heating and annealing to obtain a perovskite-polymer composite material;

[0010] wherein the acrylic polymer monomer is added in an amount of 0.01wt% to 0.1wt% of the mass of the BX compound.

[0011] Preferably, in step (1), the acrylic polymer monomer is methyl methacrylate, ethyl methacrylate, propyl methacrylate, butyl methacrylate, octyl methacrylate, methyl acrylate, ethyl acrylate, propyl acrylate, butyl acrylate, octyl acrylate, trifluoroethyl methacrylate, trifluoroethyl acrylate, acrylamide or hydroxymethyl acrylamide.

[0012] Preferably, in step (1), the acrylic polymer monomer is added in an amount of 0.04wt% to 0.06wt% of the mass of the BX compound.

[0013] Preferably, in step (1), in the BX compound, B is one or more of Pb 2+ , Sn 2+ and Ge 2+ ; X is one or more of Cl - , Br - , I - , Ac - , F - , SCN and BF 4- ; in step (2), the cation at position A is one or more of CH3NH3 + , NH2-CH=NH2 + , Cs + , Li + , C4H9NH3 + , CH6N3 + , Na + , Rb + and K + ; X is one or more of Cl - , Br - , I - , SCN - and BF 4- .

[0014] Preferably, in step (1), the solvent is one or more of N,N dimethylformamide, dimethyl sulfoxide and azamethyl pyrrolidone; in step (2), the solvent is isopropyl alcohol.

[0015] Preferably, in step (1), the initiator is azobisisobutyronitrile, lauryl peroxide or dibenzoyl peroxide.

[0016] Preferably, in step (1), the heating temperature is 70°C to 100°C and the time is 50s to 70s.

[0017] Preferably, in step (2), the heating annealing temperature is 100-180℃, and the time is 10-20min.

[0018] A perovskite-polymer composite material prepared by the method of the present application.

[0019] A perovskite solar cell comprising a conductive substrate, a first charge transport layer, a perovskite light-absorbing layer, a second charge transport layer, a charge blocking layer, and an electrode layer, wherein the perovskite light-absorbing layer is a perovskite-polymer composite material of the present application.

[0020] Preferably, the first charge transport layer is a hole transport layer or an electron transport layer, and the second charge transport layer is an electron transport layer when the first charge transport layer is a hole transport layer, and the second charge transport layer is a hole transport layer when the first charge transport layer is an electron transport layer.

[0021] Preferably, the hole transport layer is 2,2',7,7'-tetrakis(N,N-p-methoxyphenylamine)-9,9'-spirobifluorene (Spiro-MeOTAD), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid) (PEDOT:PSS), poly-3-hexylthiophene (P3HT), cuprous thiocyanate (CuSCN), nickel oxide (NiO), or cuprous iodide (CuI), and the thickness of the hole transport layer is 20-100nm.

[0022] Preferably, the electron transport layer is C 60 and derivatives thereof, zinc oxide (ZnO), tin oxide (SnOx), or fullerene derivative (PCBM), and the thickness of the electron transport layer is 20-100nm.

[0023] Preferably, the conductive substrate is fluorine-doped tin oxide conductive glass (FTO), indium tin oxide conductive glass (ITO), polyethylene naphthalate (PEN), or polyethylene terephthalate (PET).

[0024] Preferably, the charge blocking layer is 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) or tin oxide (SnOx), and the thickness of the blocking layer is 6-10nm.

[0025] Preferably, the electrode layer is a carbon electrode, gold, copper, silver, aluminum, chromium metal, or an alloy containing the above-mentioned metals, and the thickness of the electrode layer is 80-500nm.

[0026] Advantages

[0027] The application provides a perovskite-polymer composite material, wherein polymer molecules in the material are chemically stable, excellent in mechanical properties, low in elastic modulus, high in flexibility, can form strong interaction with perovskite, and can enhance the toughness of a perovskite film; and the presence of a specific content of polymer can further improve water and oxygen blocking effect and prolong the service life of a device.

[0028] The application provides a preparation method of a perovskite-polymer composite material.

[0029] The application provides a perovskite solar cell, wherein the perovskite-polymer composite material is used as a perovskite light absorption layer, mechanical stress in a perovskite cell during thermal cycle aging can be relieved, long-term stability can be realized, and the perovskite solar cell has important significance for industrialization of the perovskite solar cell. BRIEF DESCRIPTION OF DRAWINGS

[0030] Figure 1 Figure 1 is a structural schematic diagram of a perovskite solar cell in the application;

[0031] In the figure, 1 is a conductive substrate, 2 is a first charge transport layer, 3 is a perovskite light absorption layer, 4 is a second charge transport layer, 5 is a charge blocking layer, and 6 is an electrode layer.

[0032] Figure 2 Figure 1 is an x-ray photoelectron spectroscopy (XPS) diagram of Pb elements in a perovskite light absorption layer in Example 1 and Comparative Example 1.

[0033] Figure 3 Figure 1 is a thermal cycle scanning electron microscope (SEM) comparison diagram of the perovskite cells in Example 1 and Comparative Example 1, wherein Figure a and Figure b are a comparison between 0 cycles and 200 cycles of Example 1, and Figure c and Figure d are a comparison between 0 cycles and 200 cycles of Comparative Example 1.

[0034] Figure 4 Figure 1 is a device performance diagram of the perovskite cells in Example 1 and Comparative Example 2.

[0035] Figure 5 Figure 1 is a device performance diagram of the perovskite cells in Example 2 and Comparative Example 1.

[0036] Figure 6 Figure 1 is a device performance diagram of the perovskite cells in Example 3 and Comparative Example 1. DETAILED DESCRIPTION

[0037] The application will be further described in conjunction with specific examples. In the examples and comparative examples, the specific techniques or conditions not otherwise specified are in accordance with the conventional techniques or conditions in the art or in accordance with the product instructions, and the reagents or instruments not otherwise specified are all conventional products available in the market.

[0038] A perovskite solar cell, as shown in the figure, is arranged from bottom to top as follows: a conductive substrate 1, a first charge transport layer 2, a perovskite active layer 3, a second charge transport layer 4, a charge blocking layer 5, and an electrode layer 6. In the preparation, the coating methods include spin coating, spraying, doctor blading, screen printing or evaporation. Figure 1

[0039] When the first charge transport layer is a hole transport layer and the second charge transport layer is an electron transport layer, the preparation method of the perovskite solar cell includes the following steps:

[0040] (1) Preparing and cleaning the conductive substrate: The conductive substrate is selected from ITO or FTO. The conductive glass is placed in clean water containing detergent and ultrasonically treated for 30 minutes, then clean water is used to continue ultrasonic treatment for 30 minutes (repeated twice), isopropyl alcohol is used to continue ultrasonic treatment for 30 minutes (repeated twice), and clean ethanol is used to end the treatment.

[0041] (2) Preparing the hole transport layer: The hole transport layer is prepared on the conductive substrate, and the hole transport layer is one of PTAA, PACZ or nickel oxide, with a thickness of 2-10 nm.

[0042] The solution of PTAA is spin-coated on the conductive substrate and heated for annealing. More specifically, the concentration of PTAA is 2-10 mg / mL, 40 μL is taken, the heating temperature is 120°C, and the heating time is 3 minutes. The rotation speed of PTAA is 4000 rpm.

[0043] (3) Preparing the perovskite absorption layer: The perovskite thin film is prepared by a two-step method.

[0044] Configuring a lead iodide solution containing a polymer monomer and an initiator: PbI2 and CsI are dissolved in a DMF:DMSO solution with a volume ratio of 9:1, and the solution is stirred at 80°C for 8 hours.

[0045] Configuring a cation solution: FAI and MACl are dissolved in IPA, and the solution is stirred at room temperature for 1 hour to dissolve.

[0046] ​The above lead iodide solution is spin-coated on the prepared hole transport layer, and heated at 70°C for 1 minute, and the cation solution is spin-coated on the lead iodide film, and annealed at 150°C for 10 minutes to obtain a perovskite film. The perovskite film has a thickness of 400-1000 nm, and the optimal thickness is 700 nm. More specifically, the lead iodide is 40 μL, the rotation speed is 2500 rpm, the cation is 80 μL, and the rotation speed is 2900 rpm. The cation annealing is carried out in an indoor environment, and the rest is completed in a glove box.

[0047] (4) Preparation of an electron transport layer: The prepared perovskite film is placed in an evaporation source, and 25 nm of C 60 .

[0048] (5) Preparation of a hole blocking layer: A hole blocking layer is prepared on the electron transport layer, and 6 nm of a hole blocking layer is evaporated

[0049] (6) Preparation of a metal electrode: A metal electrode is prepared on the hole blocking layer, and a metal Cu is evaporated by a thermal evaporation method to obtain an 80-150 nm metal electrode.

[0050] When the first charge transport layer is an electron transport layer and the second charge transport layer is a hole transport layer, the preparation method of the above perovskite solar cell comprises the following steps:

[0051] (1) Preparation of a conductive substrate and cleaning: The conductive substrate is selected from ITO or FTO. The conductive glass is placed in water containing detergent and ultrasonically cleaned for 30 minutes, then changed to ultrapure water and continued to be ultrasonically cleaned for 30 minutes (repeated twice), then changed to isopropanol and ultrasonically cleaned for 30 minutes (repeated twice), and finally changed to clean ethanol.

[0052] (2) Preparation of an electron transport layer: Preparation of a SnO2 solution: A SnO2 aqueous solution with a mass fraction of 15% is diluted with ultrapure water at a volume ratio of 1:5, and then mixed uniformly for standby.

[0053] The SnO2 solution is spin-coated on the prepared conductive substrate at 3000 rpm for 30 s, and then the conductive substrate after spin-coating SnO2 is placed in an annealing oven at 150°C for 30 min to form a SnO2 electron transport layer on the conductive substrate. The electron transport layer is 80 nm.

[0054] (3) Preparation of a perovskite absorption layer: The perovskite film is prepared by a two-step method.

[0055] Preparation of a lead iodide solution containing a polymer monomer and an initiator: PbI2 and CsI are dissolved in a DMF:DMSO solution at a volume ratio of 9:1, and the solution is stirred at 70°C for 8 hours.

[0056] Cationic solution preparation: Dissolve FAI and MACl in IPA, stir for 1 hour at room temperature to dissolve.

[0057] Spin-coat the above lead iodide solution on the prepared hole transport layer, and heat anneal at 70°C for 1 minute. Spin-coat the cationic solution on the lead iodide film, and heat anneal at 150°C for 10 minutes to obtain a perovskite film. The thickness of the perovskite film is 400-1000 nm, and the optimal thickness is 700 nm. More specifically, the lead iodide is 40 μL, and the rotation speed is 2500 rpm. The cationic solution is 80 μL, and the rotation speed is 2900 rpm. The cationic annealing is performed in an indoor environment, and the rest is performed in a glove box.

[0058] (4) Preparation of a hole transport layer: Preparation of a spiro-OMeTAD solution: Dissolve 90 mg of spiro-OMeTAD (2,2',7,7'-tetra[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene) in 1 mL of chlorobenzene.

[0059] Spin-coat the spiro-OMeTAD solution on the perovskite film at 3000 rpm for 30 seconds to form a hole transport layer on the perovskite film, and the thickness of the hole transport layer is 200 nm.

[0060] (5) Preparation of a metal electrode: Prepare a metal electrode on the hole transport layer by using a thermal evaporation method to evaporate metal Ag to obtain a 80-150 nm metal electrode.

[0061] Implementation list 1

[0062] (1) Ultrasonically clean ITO transparent conductive glass in acetone, ethanol, and deionized water for 15 minutes each, dry with nitrogen, and irradiate the surface with a UV ozone instrument for 30 min.

[0063] (2) Use a spin-coating method to prepare PTAA poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] as a hole transport layer on the treated ITO transparent conductive glass. Use a pipette to extract 50 μL of PTAA with a concentration of 0.2 mg / mL, spin at 4000 rpm for 30 seconds, and then anneal at 120°C for 3 minutes to obtain a PTAA hole transport layer with a thickness of 15 nm.

[0064] (3) After cooling, prepare the perovskite light-absorbing layer: dissolve 691.5 mg of PbI2 and 18 mg of CsI in 100 mL of dimethyl sulfoxide and 900 mL of N’N-dimethylformamide mixed solvent to obtain a mixed solution of PbI2 and CsI, add 0.05wt% of ethyl trifluoromethyl acrylate based on the total mass of PbI2 and CsI and 0.01wt% of azobis isobutyronitrile based on the total mass of PbI2 and CsI to the mixed solution to obtain a precursor solution, drop 35 μL of the precursor solution on the hole transport layer by using the solution spin coating method, rotate at 2500 rpm for 30 seconds, then anneal at 70°C for 1 minute, after cooling, drop 80 μL of filtered formamidine iodine isopropyl alcohol solution on PbI2, rotate at 2900 rpm for 30 seconds, and anneal at 150°C for 10 minutes outside the glove box.

[0065] (4) Use the evaporation method to prepare the C60 electron transport layer and the BCP hole blocking layer on the prepared perovskite surface to obtain a 30 nm C60 layer and a 6 nm BCP hole blocking layer.

[0066] (5) Prepare a metal electrode on the blocking layer, evaporate metal Ag by using the thermal evaporation method to obtain an 80-150 nm metal electrode.

[0067] Implementation column 2

[0068] (1) Clean the ITO transparent conductive glass in acetone, ethanol, and deionized water for 15 minutes each, dry it with nitrogen, and irradiate the surface with a UV ozone instrument for 30 minutes.

[0069] (2) Prepare PTAA poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] as a hole transport layer on the treated ITO transparent conductive glass by using the spin coating method, use a pipette to extract 50 μL of PTAA with a concentration of 0.2 mg / ml, rotate at 4000 rpm for 30 seconds, then anneal at 120°C for 3 minutes to obtain a 15 nm thick PTAA hole transport layer.

[0070] (3) After cooling, prepare the perovskite light-absorbing layer: dissolve 691.5 mg of PbI2 and 18 mg of CsI in 100 mL of dimethyl sulfoxide and 900 mL of N'N-dimethylformamide to obtain a mixed solution of PbI2 and CsI, add 0.05 wt% of ethyl methacrylate based on the total mass of PbI2 and CsI and 0.01 wt% of azobisisobutyronitrile based on the total mass of PbI2 and CsI to the mixed solution to obtain a precursor solution, drop 35 μL of the precursor solution on the hole transport layer by using the solution spin coating method, rotate at 2500 rpm for 30 seconds, then anneal at 70°C for 1 minute, after cooling, drop 80 μL of filtered methylamine iodine isopropyl alcohol solution on PbI2, rotate at 2900 rpm for 30 seconds, and anneal at 150°C for 10 minutes outside the glove box.

[0071] (4) Use the evaporation method to prepare the C60 electron transport layer and the BCP hole blocking layer on the prepared perovskite surface to obtain a 30 nm C60 layer and a 6 nm BCP hole blocking layer.

[0072] (5) Prepare a metal electrode on the blocking layer by using the thermal evaporation method to evaporate metal Ag to obtain an 80-150 nm metal electrode.

[0073] Implementation column 3

[0074] (1) Clean the ITO transparent conductive glass in acetone, ethanol, and deionized water for 15 minutes each, blow dry with nitrogen, and irradiate the surface with a UV ozone instrument for 30 minutes.

[0075] (2) Spin coat the SnO2 solution on a clean ITO conductive glass substrate (i.e., the first glass cover plate) at 3000 rpm for 30 seconds, and then place the ITO conductive glass after spin coating SnO2 in an oven at 150°C for 30 minutes.

[0076] (3) After cooling, prepare the perovskite light-absorbing layer: dissolve 691.5 mg of PbI2 and 18 mg of CsI in 100 mL of dimethyl sulfoxide and 900 mL of N'N-dimethylformamide to obtain a mixed solution of PbI2 and CsI, add 0.05 wt% of ethyl methacrylate based on the total mass of PbI2 and CsI and 0.01 wt% of azobisisobutyronitrile based on the total mass of PbI2 and CsI to the mixed solution to obtain a precursor solution, drop 35 μL of the precursor solution on the hole transport layer by using the solution spin coating method, rotate at 2500 rpm for 30 seconds, then anneal at 70°C for 1 minute, after cooling, drop 80 μL of filtered methylamine iodine isopropyl alcohol solution on PbI2, rotate at 2900 rpm for 30 seconds, and anneal at 150°C for 10 minutes outside the glove box.

[0077] (4) 20 mg / mL of spiro-OMeTAD solution is spin-coated on the perovskite film at 3000 rpm for 30 s to form a hole transport layer on the perovskite film, and the thickness of the hole transport layer is 200 nm.

[0078] (5) A metal electrode is prepared on the hole transport layer, and metal Ag is evaporated by a thermal evaporation method to obtain a 80-150 nm metal electrode.

[0079] Comparative Example 1

[0080] A perovskite composite material, which is different from Example 1 in that no polymer monomer and initiator are added in the perovskite precursor solution.

[0081] Comparative Example 2

[0082] A perovskite composite material, which is different from Example 1 in that the addition amount of ethyl trifluoromethyl acrylate is 0.2 wt% of the total mass of PbI2 and CsI.

[0083] Performance test:

[0084] The perovskite cells provided by Example 1 and Comparative Example 1 are subjected to X-ray photoelectron spectroscopy (XPS) test:

[0085] Figure 2 is a comparison diagram of perovskite film with polymer monomer and traditional perovskite film, and through the results, it can be seen that the 4f peak of Pb of the perovskite film with polymer monomer moves to high binding energy, indicating the existence of polymer and perovskite bonding.

[0086] The perovskite cells provided by Example and Comparative Example 1 are subjected to SEM test:

[0087] Figure 3 is an SEM comparison diagram of perovskite cells in Example 1 and Comparative Example 1 after 200 cycles of thermal cycling. Through the results, it can be seen that the perovskite film surface of the perovskite cell in Comparative Example 1 has obvious cracks after 200 cycles of thermal cycling, while the surface morphology of the film of the perovskite cell in Example 1 has no change after 200 cycles of thermal cycling, and the mechanical stability of the perovskite solar cell is significantly improved. The surface morphology of the film of the perovskite cells in Examples 2 and 3 also has no obvious change after 200 cycles of thermal cycling.

[0088] The perovskite cells provided by Example and Comparative Example 2 are subjected to efficiency performance test:

[0089] Figure 4is a comparative diagram of the perovskite devices in Example 1 and Comparative Example 2, and it can be seen from the results that the efficiency (PCE%) of the perovskite cell with the appropriate polymer monomer is higher than that of the perovskite device with excessive polymer monomer content, indicating that excessive polymer monomer content can reduce the performance of the device.

[0090] According to the results Figures 5-6 It can be seen from the results that the perovskite cells in Examples 2 and 3 also have high efficiency.

[0091] In summary, the application includes but is not limited to the above examples, any equivalent replacement or partial improvement made within the spirit and principles of the application will be considered within the scope of protection of the application.

Claims

1. A method for preparing a perovskite-polymer composite material, characterized in that: The method steps include: (1) Add acrylic polymer monomers and initiators to a perovskite precursor BX compound solution, coat the resulting solution onto a substrate, heat to polymerize the polymer monomers, and obtain a BX compound film containing polymer on the substrate. (2) Coating the A-site cation solution of the perovskite precursor onto the BX compound film containing the polymer, and annealing by heating to obtain a perovskite-polymer composite material. The amount of acrylic polymer monomer added is 0.04wt%~0.06wt% of the mass of the BX compound; in the BX compound, B is Pb. 2+ Sn 2+ and Ge 2+ One or more of them; X is Cl - ,Br - I - Ac - F - and SCN - One or more; the cation at the A site is CH3NH3 + NH2-CH=NH2 + Cs + Li + C4H9NH3 + CH6N3 + Na + 、Rb + and K + One or more of them; In step (1), the heating temperature is 70℃~100℃ and the time is 50s~70s; In step (2), the heating annealing temperature is 100℃~180℃ and the time is 10min~20min.

2. The method for preparing a perovskite-polymer composite material as described in claim 1, characterized in that: In step (1), the acrylic polymer monomer is methyl methacrylate, ethyl methacrylate, propyl methacrylate, butyl methacrylate, octyl methacrylate, methyl methacrylate, ethyl acrylate, propyl acrylate, butyl acrylate, octyl acrylate, trifluoroethyl methacrylate, trifluoroethyl acrylate, acrylamide, or hydroxymethylacrylamide. The solvent is one or more of N,N-dimethylformamide, dimethyl sulfoxide, and N-methylpyrrolidone.

3. The method for preparing a perovskite-polymer composite material as described in claim 1, characterized in that: In step (2), the solvent is isopropanol.

4. The method for preparing a perovskite-polymer composite material as described in claim 1, characterized in that: In step (1), the initiator is azobisisobutyronitrile, dodecyl peroxide, or benzoyl peroxide.

5. A perovskite-polymer composite material, characterized in that: The composite material is prepared by the method described in any one of claims 1 to 4.

6. A perovskite solar cell, characterized in that: It includes a conductive substrate, a first charge transport layer, a perovskite light-absorbing layer, a second charge transport layer, a charge blocking layer, and an electrode layer, wherein the perovskite light-absorbing layer is a perovskite-polymer composite material as described in claim 5.

7. A perovskite solar cell as described in claim 6, characterized in that: The first charge transport layer is either a hole transport layer or an electron transport layer. When the first charge transport layer is a hole transport layer, the second charge transport layer is an electron transport layer; when the first charge transport layer is an electron transport layer, the second charge transport layer is a hole transport layer.

8. A perovskite solar cell as described in claim 7, characterized in that: The hole transport layer is 2,2',7,7'-tetratetra(N,N-p-methoxyaniline)-9,9'-spirodifluorene, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate), poly-3-hexylthiophene, cuprous thiocyanate, nickel oxide, or cuprous iodide, and the thickness of the hole transport layer is 20 nm to 100 nm; The electron transport layer is C. 60 And its derivatives, zinc oxide, tin oxide or fullerene derivatives, wherein the electron transport layer has a thickness of 20 nm to 100 nm; The conductive substrate is fluorine-doped tin oxide conductive glass, indium tin oxide conductive glass, polyethylene naphthalate or polyethylene terephthalate. The charge blocking layer is 2,9-dimethyl-4,7-biphenyl-1,10-o-diazaphenanthroline or tin oxide, and the thickness of the blocking layer is 6 nm to 10 nm. The electrode layer is a carbon electrode, gold, copper, silver, aluminum, chromium metal or an alloy containing the above metals, and the thickness of the electrode layer is 80nm~500nm.

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