Display device and manufacturing method thereof

Abstract

The application discloses a display device and a manufacturing method thereof. The display device comprises a driving substrate, a plurality of micro light emitting diodes located above the driving substrate, an insulating layer covering surfaces of the driving substrate and the micro light emitting diodes, and a plurality of sidewall electrodes located on a side of the insulating layer away from the driving substrate. The insulating layer comprises a first opening exposing the driving substrate and a second opening exposing a surface of the micro light emitting diode on a side away from the driving substrate; one micro light emitting diode corresponds to one first opening and one second opening; one sidewall electrode corresponds to one micro light emitting diode, a partial area of the sidewall electrode covers a surface of the insulating layer on a sidewall of the micro light emitting diode, and the sidewall electrode is electrically connected to the driving substrate through the first opening. The insulating layer repairs sidewall defects of the micro light emitting diode, and application of an electrode to the sidewall electrode can inhibit sidewall leakage current of the micro light emitting diode, reduce occurrence of non-radiative recombination, and improve light emitting efficiency of the micro light emitting diode.

Description

Technical Field

[0001] This invention relates to the field of display technology, and in particular to a display device and its manufacturing method. Background Technology

[0002] Micro LED (Micro Light Emitting Diode) display technology refers to a display technology in which the light-emitting chip directly serves as the light-emitting unit. Micro LED inherits the high efficiency, high brightness, high reliability, and fast response time of traditional light-emitting diodes, and also has the characteristics of self-illumination without the need for a backlight. It also has advantages such as energy saving, simple structure, small size, and thinness.

[0003] Currently, the fabrication of micro LEDs involves first forming a large-sized epitaxial wafer, then etching the epitaxial wafer to create the micro LED chip. This etching process damages the chip's sidewalls, creating numerous dangling bonds. These dangling bonds connect to form stable leakage paths, leading to non-radiative recombination of current and affecting luminous efficiency. Summary of the Invention

[0004] In some embodiments of the present invention, an insulating layer is provided on the sidewall of the micro light-emitting diode to repair sidewall defects of the micro light-emitting diode and to a certain extent suppress nonradiative recombination of charge carriers.

[0005] In some embodiments of the present invention, sidewall electrodes are provided on the surface of the insulating layer away from the sidewall of the micro-light-emitting diode, which can suppress the sidewall leakage current of the micro-light-emitting diode, reduce the occurrence of non-radiative recombination, and improve the luminous efficiency of the micro-light-emitting diode.

[0006] In some embodiments of the present invention, a filling layer is further provided on the side of the sidewall electrode and the insulating layer away from the driving substrate, which is used to provide insulation protection for the sidewall electrode and to make the surface of the display device flat.

[0007] In some embodiments of the present invention, the common electrode is located on the side of the filling layer away from the driving substrate, the common electrode is disposed on the entire layer, and is electrically connected to the micro light-emitting diode through the second opening of the insulating layer.

[0008] In some embodiments of the present invention, the micro light-emitting diode includes a first doped layer close to the driving substrate, a second doped layer away from the driving substrate, and a light-emitting layer located between the first and second doped layers. The first and second doped layers use the same matrix material but with opposite doping types; the light-emitting layer is a multi-quantum-well layer.

[0009] In some embodiments of the present invention, the sidewall electrode is located on the insulating layer on the sidewall surface of the first doped layer, and the sidewall electrode is electrically connected to the driving substrate through a first opening in the insulating layer. The surface of the sidewall electrode facing away from the driving substrate does not exceed the surface of the light-emitting layer facing away from the driving substrate. After an electrical signal is applied, the sidewall electrode has a driving effect on the charge carriers in the first doped layer, but has no effect on the second doped layer, thereby reducing leakage current.

[0010] In some embodiments of the present invention, the potential of the sidewall electrode located on one side of the first doped layer is equal to the potential applied to the first doped layer.

[0011] In some embodiments of the present invention, the sidewall electrode is located above the first filling layer and on the insulating layer on the sidewall surface of the second doped layer. The sidewall electrode is electrically connected to the driving substrate through a first opening in the insulating layer and a third opening in the first filling layer. The surface of the sidewall electrode facing the driving substrate does not exceed the surface of the light-emitting layer facing the driving substrate. After an electrical signal is applied, the sidewall electrode has a driving effect on the charge carriers in the second doped layer, but has no effect on the first doped layer, thereby reducing leakage current.

[0012] In some embodiments of the present invention, the potential of the sidewall electrode located on one side of the second doped layer is equal to the potential applied by the second doped layer.

[0013] In some embodiments of the present invention, the sidewall electrode includes a first sidewall electrode and a second sidewall electrode. The first sidewall electrode is located on an insulating layer on the sidewall surface of the first doped layer, and is electrically connected to the driving substrate through a first portion of the insulating layer. A first filling layer is located on the first sidewall electrode, and a second sidewall electrode is located on the first filling layer and on an insulating layer on the sidewall surface of the second doped layer. The sidewall electrode is electrically connected to the driving substrate through a second portion of the insulating layer and a third opening in the first filling layer. After an electrical signal is applied, the first sidewall electrode promotes the carriers in the first doped layer but has no effect on the second doped layer. After an electrical signal is applied, the second sidewall electrode promotes the carriers in the second doped layer but has no effect on the first doped layer, thereby reducing leakage current.

[0014] In some embodiments of the present invention, the potential of the first sidewall electrode located on one side of the first doped layer is equal to the potential applied by the first doped layer, and the potential of the second sidewall electrode located on one side of the second doped layer is equal to the potential applied by the second doped layer.

[0015] In some embodiments of the present invention, the first opening is in the shape of a dot or a ring.

[0016] In some embodiments of the present invention, the method for manufacturing the display device includes:

[0017] Each miniature light-emitting diode is transferred onto the driving substrate;

[0018] An insulating layer is formed on each micro LED and the driving substrate; the insulating layer includes a first opening that exposes the driving substrate and a second opening that exposes the surface of the micro LED facing away from the driving substrate; one micro LED corresponds to one first opening and one second opening;

[0019] A sidewall electrode is formed on the side of the insulating layer away from the driving substrate; one sidewall electrode corresponds to one micro light-emitting diode, and a portion of the sidewall electrode covers the surface of the insulating layer away from the sidewall of the micro light-emitting diode; the sidewall electrode is electrically connected to the driving substrate through a first opening.

[0020] In some embodiments of the present invention, a sidewall electrode is formed on the side of the insulating layer opposite to the driving substrate, including:

[0021] A sidewall electrode is formed on the surface of the insulating layer away from the driving substrate; the sidewall electrode covers a portion of the insulating layer away from the sidewall of the micro LED, and the surface of the side of the light-emitting layer away from the driving substrate does not exceed the surface of the light-emitting layer away from the driving substrate.

[0022] A filling layer is formed on the side of the sidewall electrode and the insulating layer that is away from the driving substrate;

[0023] A common electrode is formed on the side of the fill layer and the micro-light-emitting diode facing away from the driving substrate; the common electrode is electrically connected to the second doped layer through the second opening;

[0024] In some embodiments of the present invention, a sidewall electrode is formed on the side of the insulating layer opposite to the driving substrate, including:

[0025] A first filling layer is formed on the side of the insulating layer away from the driving substrate; the first filling layer includes a third opening that exposes the driving substrate, and the third opening corresponds one-to-one with the first opening;

[0026] A sidewall electrode is formed on the surface of the first filling layer and the insulating layer facing away from the driving substrate. The sidewall electrode covers a portion of the insulating layer facing away from the sidewall of the micro light-emitting diode, and the surface of the insulating layer facing the driving substrate does not exceed the surface of the light-emitting layer facing the driving substrate. The sidewall electrode is electrically connected to the driving substrate through the first opening and the third opening.

[0027] A second filling layer is formed on the side of the sidewall electrode and the first filling layer that is away from the driving substrate;

[0028] A common electrode is formed on the side of the second filling layer and the micro light-emitting diode away from the driving substrate; the common electrode is electrically connected to the second doped layer through the second opening;

[0029] In some embodiments of the present invention, the sidewall electrode is divided into a first sidewall electrode and a second sidewall electrode, and the first opening is divided into a first part and a second part;

[0030] A sidewall electrode is formed on the side of the insulating layer away from the driving substrate, including:

[0031] A first sidewall electrode is formed on the surface of the insulating layer away from the driving substrate; the first sidewall electrode covers a portion of the insulating layer away from the sidewall of the micro light-emitting diode, and the surface of the light-emitting layer away from the driving substrate does not exceed the surface of the light-emitting layer away from the driving substrate; the first sidewall electrode is electrically connected to the driving substrate through a first part.

[0032] A first filling layer is formed on the side of the first sidewall electrode and the insulating layer that is away from the driving substrate; the first filling layer includes a third opening that exposes the driving substrate, and the third opening corresponds one-to-one with the second part;

[0033] A second sidewall electrode is formed on the surface of the first filling layer and the insulating layer facing away from the driving substrate; the second sidewall electrode covers a portion of the insulating layer facing away from the sidewall of the micro light-emitting diode, and the surface of the insulating layer facing away from the driving substrate does not exceed the surface of the light-emitting layer facing the driving substrate; the second sidewall electrode is electrically connected to the driving substrate through a third opening and a second part.

[0034] A second filling layer is formed on the side of the second sidewall electrode and the first filling layer that is away from the driving substrate;

[0035] A common electrode is formed on the side of the second filling layer and the micro-light-emitting diode away from the driving substrate; the common electrode is electrically connected to the second doped layer through a second opening. Attached Figure Description

[0036] To more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the embodiments of the present invention will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0037] Figure 1a This is one of the cross-sectional structural schematic diagrams of the display device provided in the embodiments of the present invention;

[0038] Figure 1b One of the top views of the display device provided in the embodiment of the present invention;

[0039] Figure 2a This is a second schematic diagram of the cross-sectional structure of the display device provided in an embodiment of the present invention;

[0040] Figure 2b A second top view of the display device provided in an embodiment of the present invention;

[0041] Figure 3 This is the third schematic diagram of the cross-sectional structure of the display device provided in the embodiment of the present invention;

[0042] Figure 4 Fourth schematic diagram of the cross-sectional structure of the display device provided in the embodiment of the present invention;

[0043] Figure 5 Fifth schematic diagram of the cross-sectional structure of the display device provided in the embodiments of the present invention;

[0044] Figure 6 Sixth schematic diagram of the cross-sectional structure of the display device provided in the embodiments of the present invention;

[0045] Figure 7 Seventh schematic diagram of the cross-sectional structure of the display device provided in the embodiments of the present invention;

[0046] Figure 8 A schematic flowchart illustrating a method for manufacturing a display device according to an embodiment of the present invention;

[0047] Figures 9a-9d A schematic cross-sectional view of each step in the manufacturing method of the display device provided in the embodiment of the present invention;

[0048] Figures 10a-10c This is a schematic cross-sectional view of each step in the manufacturing method of another display device provided in an embodiment of the present invention.

[0049] Figures 11a-11e This is a cross-sectional structural diagram of each step in the manufacturing method of another display device provided in an embodiment of the present invention.

[0050] Wherein, 10-driving substrate, 20-micro light-emitting diode, 30-insulating layer, 40-sidewall electrode, 41-first sidewall electrode, 42-second sidewall electrode, 50-filling layer, 51-first filling layer, 52-second filling layer, 60-common electrode, 101-substrate, 102-driving circuit layer, 201-first doped layer, 202-light-emitting layer, 203-second doped layer, S1-first opening, S2-second opening, S3-third opening, S1-1-first part, S1-2-second part, P-pad. Detailed Implementation

[0051] To make the above-mentioned objects, features, and advantages of the present invention more apparent and understandable, the present invention will be further described below in conjunction with the accompanying drawings and embodiments. However, the exemplary embodiments can be implemented in many forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided to make the present invention more comprehensive and complete, and to fully convey the concept of the exemplary embodiments to those skilled in the art. The same reference numerals in the figures denote the same or similar structures, and therefore repeated descriptions of them will be omitted. Terms describing position and direction in the present invention are illustrative based on the accompanying drawings, but changes can be made as needed, and all such changes are included within the scope of protection of the present invention. The accompanying drawings of the present invention are for illustrative purposes only and do not represent actual proportions.

[0052] Light-emitting diodes (LEDs) have advantages such as low power consumption, long lifespan, and no pollution. The core structure of an LED is a PN junction, which has characteristics such as forward conduction and reflection cutoff. When a forward bias voltage is applied to the PN junction, electrons in the n-type region and holes in the p-type region move under the influence of an applied electric field. The energy generated after interband recombination of electrons and holes is released in the form of photons, thus emitting light. However, LEDs with this homogeneous structure have relatively low luminous efficiency. Therefore, multi-heterojunction structures are often introduced to fabricate LEDs to improve luminous efficiency.

[0053] When an LED device with a multi-quantum-well structure is forward deflected, electrons and holes move to the multi-quantum-well layer under the action of an external electric field, which increases the overlap rate of the electron and hole wave functions and improves its recombination luminous efficiency.

[0054] Micro LEDs inherit the high efficiency, high brightness, high reliability, and fast response time of LEDs, and also possess the characteristic of self-illumination without the need for a backlight. They offer further advantages such as energy saving, simple structure, small size, and thinness. Current micro LED fabrication involves first forming a large-size epitaxial wafer, then etching the wafer to create the micro LED chip. The etching process damages the sidewalls of the chip, creating numerous dangling bonds. These dangling bonds connect to form stable leakage paths, leading to non-radiative recombination of current and affecting luminous efficiency.

[0055] In view of this, embodiments of the present invention provide a display device that can repair sidewall defects of a micro LED chip without changing its size, and can further fabricate external electrodes to increase external bias voltage, reduce non-radiative recombination, and improve the luminous efficiency of the micro LED chip.

[0056] Figure 1a This is one of the cross-sectional structural schematic diagrams of the display device provided in the embodiments of the present invention. Figure 1bOne of the top views of the display device provided in an embodiment of the present invention.

[0057] Reference Figure 1a The display device includes: a driving substrate 10, a plurality of micro light-emitting diodes 20, an insulating layer 30, and a plurality of sidewall electrodes 40.

[0058] The driving substrate 10 includes a substrate 101 and a driving circuit layer 102. The substrate 101 is located at the bottom of the display device and has a supporting and load-bearing function. The substrate 101 is usually a rectangular structure, and when applied to an irregularly shaped display device, its shape is adapted to the shape of the display device.

[0059] In this embodiment of the invention, the substrate 101 can be made of glass with a high thermal conductivity. Using glass with a high thermal conductivity to make the substrate 101 can quickly dissipate the heat generated by the display device during display, avoiding the problem of reduced luminous efficiency caused by excessive temperature. In addition, the surface of the glass substrate is smooth and flat, which is beneficial to the subsequent processing and manufacturing. Furthermore, the substrate 101 can also be made of flexible material to form a flexible display device, which is not limited here.

[0060] The driving circuit layer 102 is located on the substrate 101, and includes driving elements for driving the micro light-emitting diode 20 to emit light and signal lines. The driving circuit layer 102 provided in this embodiment of the invention can be fabricated using a thin film transistor (TFT) process.

[0061] The driving circuit layer 102 consists of multiple metal layers and insulating layers. By patterning the metal layers and insulating layers, a circuit composed of driving elements such as thin-film transistors, capacitors, and resistors with specific interconnections is formed. After the driving circuit layer 102 is electrically connected to the micro LED 20, the driving circuit layer 102 can provide a driving signal to the micro LED 20 to control the micro LED 20 to emit light.

[0062] The miniature light-emitting diode 20 is located on the driving circuit layer 102. After the driving circuit layer 102 is fabricated, a pad P for soldering the miniature light-emitting diode 20 is formed on its surface. The miniature light-emitting diode 20 is soldered onto the pad P, so that the miniature light-emitting diode 20 can be driven to emit light by controlling the driving signal of the driving circuit layer 102.

[0063] The micro-LED 20 differs from ordinary LEDs in that its size is much smaller than that of an LED. Specifically, it refers to a micro-LED chip, which can be a Micro LED. Micro LEDs possess characteristics such as high efficiency, high brightness, high reliability, and fast response time. They are also self-emissive and do not require a backlight, offering advantages such as energy saving, simple structure, small size, and thinness. In the embodiments provided by this invention, the micro-LED 20 can be fabricated to pixel-level size, directly using Micro LEDs as sub-pixel units for image display. For example, the size of the micro-LED 20 can be less than 50μm, and this is not a limitation.

[0064] Specifically, such as Figure 1a As shown, the miniature light-emitting diode 20 includes: a first doped layer 201, a light-emitting layer 202, and a second doped layer 203.

[0065] The first doped layer 201 is located above the pad P and is electrically connected to the driving circuit layer 102; the light-emitting layer 202 is located on the side of the first doped layer 201 away from the driving circuit layer 102, and the light-emitting layer 202 can use multiple quantum well layers to improve the light-emitting efficiency; the second doped layer 203 is located on the side of the light-emitting layer 202 away from the first doped layer 201.

[0066] In the embodiments provided by this invention, the first doped layer 201 and the second doped layer 203 are located on opposite sides of the light-emitting layer 202, and the doping types of the two doped layers are opposite. If the first doped layer 201 is N-type doped to form an N-type doped layer, then the second doped layer 203 is P-type doped to form a P-type doped layer; if the first doped layer 201 is P-type doped to form a P-type doped layer, then the second doped layer 203 is N-type doped to form an N-type doped layer. In specific implementations, both of the above structures can be applied, and no limitation is made here.

[0067] An insulating layer 30 covers the surface of the driving substrate 10 and each micro-light-emitting diode 20. The insulating layer 30 includes a first opening S1 that exposes the driving substrate 10 and a second opening S2 that exposes the surface of the micro-light-emitting diode 20 facing away from the driving substrate 10, and one micro-light-emitting diode 20 corresponds to one first opening S1 and one second opening S2; wherein, the second opening S2 exposes the second doped layer 203.

[0068] The insulating layer 30 can be fabricated using processes such as chemical vapor deposition (CVD) or atomic layer deposition (ALD). Specifically, insulating materials such as SiO2, SiN2, or Al2O3 can be deposited onto the surface of the driving circuit layer 102 and each micro light-emitting diode 20, and then the insulating layer 30 can be etched to form the first opening S1 and the second opening S2.

[0069] In the embodiments provided by the present invention, the insulating layer 30 covering the sidewall of the micro light-emitting diode 20 can repair the sidewall defects of the micro light-emitting diode 20, and to a certain extent avoid the phenomenon of sidewall leakage current of the micro light-emitting diode 20, thereby reducing the occurrence of non-radiative recombination, improving the luminous efficiency of the micro light-emitting diode 20, and reducing the overall power consumption of the display device.

[0070] To further suppress the sidewall leakage current of the micro LED, the present invention also forms a sidewall electrode 40 on the insulating layer 30 covering the sidewall of the micro LED 20.

[0071] The sidewall electrode 40 is located on the side of the insulating layer 30 away from the driving substrate 10, and one sidewall electrode 40 corresponds to one micro light-emitting diode 20. A portion of the sidewall electrode 40 covers the surface of the insulating layer 30 away from the sidewall of the micro light-emitting diode 20, and the entire electrode forms a ring shape surrounding the insulating layer 30 on the sidewall of the micro light-emitting diode 20. The sidewall electrode 40 is electrically connected to the driving circuit layer 102 through the first opening S1.

[0072] In the embodiments provided by the present invention, a certain potential is provided to the sidewall electrode 40 by the driving substrate 10. This potential is used to limit the direction of charge carriers in the micro light-emitting diode 20, so that the charge carriers are pushed into the chip (as shown by the arrow in the figure), suppressing the sidewall leakage current of the micro light-emitting diode 20, further reducing the occurrence of nonradiative recombination, and improving the luminous efficiency of the micro light-emitting diode 20.

[0073] In practice, the sidewall electrode 40 can be fabricated using processes such as physical vapor deposition (PVD) or evaporation. The sidewall electrode 40 can be made of conductive materials such as metals, and there is no limitation on its use.

[0074] In the embodiments provided by the present invention, the first opening S1 is used to expose the lines in the driving substrate, so that the sidewall electrode 40 can be interconnected with the driving substrate 10 when the sidewall electrode 40 is formed, and the driving substrate 10 provides electrical signals to it.

[0075] In practical implementation, the aforementioned first opening S1 can be a via, formed using an etching process in the prior art. In this case, the first opening S1 can simply be made at the designated location (see reference). Figure 1b This simplifies the process.

[0076] Figure 2a This is a second schematic diagram of the cross-sectional structure of the display device provided in an embodiment of the present invention. Figure 2b This is a second top view of the display device provided in an embodiment of the present invention.

[0077] Reference Figure 2a and Figure 2b In some embodiments, the first opening S1 can also be configured as an annular through slot exposing the driving substrate 10, that is, the first opening S1 can be configured as follows: Figure 2b As shown in the annular shape, the driving substrate 10 is provided with signal lines or electrical connection structures for connecting the sidewall electrodes at the positions corresponding to the annular opening. When the sidewall electrode 40 is electrically connected to the driving substrate through the aforementioned annular first opening S1, the contact area between the sidewall electrode 40 and the driving substrate 10 can be increased, thereby reducing the contact resistance between the two.

[0078] When the sidewall electrode 40 is connected to the insulating layer 30 on the surface of the first doped layer 201 and the second doped layer 203 in the micro light-emitting diode, after a potential is applied to the sidewall electrode 40, since the potentials applied to the first doped layer 201 and the second doped layer 203 are different, the sidewall electrode 40 will only repel charge carriers on the doped layer on the side with the same potential, thus reducing leakage current; while it will attract charge carriers on the doped layer on the other side, thus increasing the leakage current.

[0079] In view of this, the present invention provides that the sidewall electrode is disposed only at the position corresponding to the doped layer on one side of the micro light-emitting diode, and the sidewall electrode 40 is demarcated from the light-emitting layer 202 and does not exceed the position of the light-emitting layer, thereby avoiding the above-mentioned problems.

[0080] Figure 3 This is the third schematic diagram of the cross-sectional structure of the display device provided in the embodiment of the present invention.

[0081] Reference Figure 3 In some embodiments, the sidewall electrode 40 covers the surface of the insulating layer 30 facing away from the driving substrate 10; and a portion of the sidewall electrode 40 covers the insulating layer of the micro-light-emitting diode's sidewall. Specifically, the portion of the sidewall electrode 40 covering the insulating layer of the micro-light-emitting diode's sidewall, facing away from the driving substrate 10, does not exceed the surface of the light-emitting layer 202 facing away from the driving substrate 10. Figure 3 As can be seen, the upper surface of the sidewall electrode 40 is not higher than the upper surface of the light-emitting layer 202. Therefore, when an electrical signal is applied to the sidewall electrode 40, it only promotes the carriers in the first doped layer 201 and does not affect the second doped layer 203. Applying an electrical signal to the sidewall electrode 40 can effectively suppress the sidewall leakage current in the region of the first doped layer 201, reduce non-radiative recombination, and improve the luminous efficiency of the micro-LED 20.

[0082] In practice, the potential applied to the sidewall electrode 40 can be equal to the potential provided by the pad P to the first doped layer 201. This allows the sidewall electrode 40 and the pad to share a single signal line.

[0083] Specifically, such as Figure 2a As shown, the sidewall electrode 40 can be connected to a signal line on the driving substrate 10 through the first opening S1. The signal line is interconnected with the pad P through the lines in the driving substrate 10, thereby applying the same potential to the sidewall electrode 40 and the pad P.

[0084] Or, such as Figure 3 As shown, the width of the pad P can also be increased so that the first opening S1 can expose the pad P. Then, when the sidewall electrode 40 is made, the sidewall electrode 40 can be in direct contact with the pad P, so that when an electrical signal is applied to the pad P, the potential on the pad P and the sidewall electrode 40 are equal.

[0085] like Figure 3 As shown, the display device also includes a filling layer 50 and a common electrode 60.

[0086] A filler layer 50 covers the sidewall electrode 40 and the surface of the insulating layer 30 facing away from the driving substrate 10. The filler layer 50 is provided throughout, providing insulation and protection for the sidewall electrode 40, while also making the surface of the display device flat.

[0087] The filler layer 50 can be an organic resin layer or SiN. X or SiO X The materials used for production are not limited here.

[0088] The common electrode 60 is located on the side of the filling layer 50 and the micro light-emitting diode 20 away from the driving substrate 10. The common electrode 60 is electrically connected to the second doped layer 203 through the second opening S2.

[0089] The common electrode 60 is formed over the entire layer, and a ring of common electrode lines can be formed around the edge of the driving substrate 10. By forming an annular through-groove between the filling layer 50 and the insulating layer 30 corresponding to the common electrode lines, the common electrode 60 and the common electrode lines can be interconnected. This method of connecting the common electrode 60 can improve the voltage drop problem generated by the common electrode.

[0090] In practical implementation, the common electrode 60 can be made of a transparent conductive material, such as ITO, IZO or a thin metal layer, so as to ensure that the light emitted by the micro light-emitting diode 20 can be emitted smoothly.

[0091] Figure 4 The fourth schematic diagram of the cross-sectional structure of the display device provided in the embodiment of the present invention.

[0092] Reference Figure 4 In some embodiments, the filling layer includes a first filling layer 51 and a second filling layer 52.

[0093] The first filling layer 51 is located on the surface of the insulating layer 30 away from the driving substrate 10, and the first filling layer 51 is patterned to form a third opening S3 that exposes the driving substrate 10. The third opening S3 corresponds to the first opening S1, and the first opening S1 and the third opening S3 are interconnected, exposing the driving substrate 10.

[0094] The sidewall electrode 40 is located on the surface of the first filling layer 51 facing away from the driving substrate 10, and a portion of the sidewall electrode covers the insulating layer of the micro-light-emitting diode's sidewall. Specifically, the surface of the sidewall electrode 40 on the insulating layer of the micro-light-emitting diode's sidewall facing the driving substrate 10 does not exceed the surface of the light-emitting layer 202 facing the driving substrate 10. Figure 4 As can be seen, the lower surface of the sidewall electrode 40 does not extend beyond the lower surface of the light-emitting layer 202. Therefore, applying an electrical signal to the sidewall electrode 40 will only promote the carriers in the second doped layer 203, without affecting the first doped layer 201. Applying an electrical signal to the sidewall electrode 40 effectively suppresses sidewall leakage current in the region of the second doped layer 203, reduces non-radiative recombination, and improves the luminous efficiency of the micro-LED 20.

[0095] The sidewall electrode 40 can be fabricated using vapor deposition or evaporation processes. The sidewall electrode 40 is electrically connected to the driving substrate 10 through the first opening S1 and the third opening S3.

[0096] In practice, the potential of the sidewall electrode 40 is independently controlled by the driving substrate 10. The potential applied to the sidewall electrode 40 can be equal to the potential provided by the common electrode 60 to the second doped layer 203. Specifically, a connection structure electrically connecting the sidewall electrode 40 can be fabricated on the surface of the driving substrate, and then the connection structure can be interconnected with the common electrode signal line through the lines of the driving substrate 10, thereby applying the same signal as the common electrode to the sidewall electrode 40. Alternatively, an appropriate potential can be applied to the sidewall electrode 40 according to the actual situation, which is not limited here.

[0097] Furthermore, a second filling layer 52 is provided on the surface of the sidewall electrode 40 and the first filling layer 51 facing away from the driving substrate 10. The second filling layer 52 is provided throughout and serves to insulate and protect the sidewall electrode 40, while also making the surface of the display device flat.

[0098] Both the first filler layer 51 and the second filler layer 52 can be made of organic resin or SiN. X or SiO X The materials used for production are not limited here.

[0099] The common electrode 60 is located on the side of the second filling layer 52 and the micro light-emitting diode 20 away from the driving substrate 10. The common electrode 60 is electrically connected to the second doped layer 203 through the second opening S2.

[0100] Figure 5 Fifth schematic diagram of the cross-sectional structure of the display device provided in the embodiment of the present invention.

[0101] Reference Figure 5 In some embodiments, when fabricating the sidewall electrode 40, the upper surface of the sidewall electrode 40 can be raised so that it is flush with the second doped layer 203 or the insulating layer 30. This allows the common electrode 60 to directly contact the sidewall electrode 40, resulting in an electrical connection between them. In this case, the potential of the signal provided by the driving substrate 10 to the sidewall electrode 40 is equal to that of the signal to the common electrode 60.

[0102] Figure 6 This is the sixth schematic diagram of the cross-sectional structure of the display device provided in the embodiment of the present invention. Figure 7 This is the seventh schematic diagram of the cross-sectional structure of the display device provided in the embodiment of the present invention.

[0103] Reference Figure 6 and Figure 7 In some embodiments, the sidewall electrode includes a first sidewall electrode 41 and a second sidewall electrode 42, the filling layer includes a first filling layer 51 and a second filling layer 52, and the first opening includes a first part S1-1 and a second part S1-2.

[0104] The first sidewall electrode 41 covers the surface of the insulating layer 30 facing away from the driving substrate 10, and a portion of the first sidewall electrode 41 covers the insulating layer of the sidewall of the micro light-emitting diode. The first sidewall electrode 41 is electrically connected to the driving substrate through the first part S1-1.

[0105] In this configuration, the portion of the first sidewall electrode 41 covering the insulating layer of the micro-LED sidewall, on the side facing away from the driving substrate 10, does not exceed the surface of the light-emitting layer 202 facing away from the driving substrate 10. Figure 5 It can be seen that the upper surface of the first sidewall electrode 40 is not higher than the upper surface of the light-emitting layer 202. Therefore, after applying an electrical signal, the first sidewall electrode 41 will only promote the carriers in the first doped layer 201, without affecting the second doped layer 203. Applying an electrical signal to the first sidewall electrode 41 can effectively suppress the sidewall leakage current in the region of the first doped layer 201, reduce non-radiative recombination, and improve the luminous efficiency of the micro-LED 20.

[0106] The first filler layer 51 covers the surface of the first sidewall electrode 41 and the insulating layer 30 facing away from the driving substrate 10. The first filler layer 51 is disposed throughout, providing insulation and protection for the sidewall electrode 40. The first filler layer 51 is patterned to form a third opening S3 that exposes the driving substrate 10. The third opening S3 corresponds one-to-one with the first opening S1, and the first opening S1 and the third opening S3 are interconnected, exposing the driving substrate 10.

[0107] The second sidewall electrode 42 is located on the surface of the first filler 51 facing away from the driving substrate 10, and a portion of the sidewall electrode covers the insulating layer of the micro-light-emitting diode sidewall. The second sidewall electrode 42 is electrically connected to the driving substrate 10 through the third opening S3 and the second part S1-2.

[0108] In this case, a portion of the surface of the second sidewall electrode 42 on the insulating layer of the micro-light-emitting diode sidewall facing the driving substrate 10 does not exceed the surface of the light-emitting layer 202 facing the driving substrate 10. Figure 5 It can be seen that the lower surface of the second sidewall electrode 42 does not exceed the lower surface of the light-emitting layer 202. Therefore, applying an electrical signal to the second sidewall electrode 42 will only promote the carriers in the second doped layer 203, without affecting the first doped layer 201. Applying an electrical signal to the second sidewall electrode 42 can effectively suppress the sidewall leakage current in the region of the second doped layer 203, reduce non-radiative recombination, and improve the luminous efficiency of the micro-LED 20.

[0109] Therefore, by fabricating the first sidewall electrode 41 and the second sidewall electrode 42 in the first doped layer 201 and the second doped layer 203 respectively to suppress leakage current at the corresponding positions, the luminous efficiency of the micro light-emitting diode can be effectively improved.

[0110] The second filling layer 52 covers the second sidewall electrode 42 and the surface of the first filling layer 51 facing away from the driving substrate 10. The second filling layer 52 is disposed throughout the entire layer, which serves to insulate and protect the second sidewall electrode 42, and at the same time can make the surface of the display device flat.

[0111] Both the first filler layer 51 and the second filler layer 52 can be made of organic resin or SiN. X or SiO X The materials used for production are not limited here.

[0112] The common electrode 60 is located on the side of the second filling layer 52 and the micro light-emitting diode 20 away from the driving substrate 10. The common electrode 60 is electrically connected to the second doped layer 203 through the second opening S2.

[0113] In a specific implementation, both the first sidewall electrode 41 and the second sidewall electrode 42 are electrically connected to the driving substrate 10, and the driving substrate 10 can independently apply a potential to the first sidewall electrode 41 and the second sidewall electrode 42.

[0114] The potential provided by the driving substrate to the first sidewall electrode 41 can be equal to the potential provided to the first doped layer 201, or the potential applied to the first sidewall electrode 41 can be adjusted according to actual needs.

[0115] like Figure 6 As shown, the second sidewall electrode 42 is not in contact with the common electrode. The potential of the second sidewall electrode 42 can be equal to the potential of the common electrode, or it can be adjusted according to actual needs.

[0116] like Figure 7 As shown, the second sidewall electrode 42 is in contact with the common electrode and the two are electrically connected. At this time, the driving substrate can provide the potential of the common electrode to the second sidewall electrode 42, thereby also applying a signal to the common electrode through the second sidewall electrode 42.

[0117] In another aspect of the present invention, a method for manufacturing a display device is provided. Figure 8 This is a schematic flowchart illustrating a method for manufacturing a display device according to an embodiment of the present invention.

[0118] Reference Figure 8 The method for manufacturing a display device provided in this embodiment of the invention includes:

[0119] S10. Transfer each miniature light-emitting diode onto the driving substrate;

[0120] S20. An insulating layer is formed on each micro light-emitting diode and the driving substrate;

[0121] S30. A sidewall electrode is formed on the side of the insulating layer away from the driving substrate.

[0122] The insulating layer includes a first opening that exposes the driving substrate, and the sidewall electrode is electrically connected to the driving substrate through the first opening.

[0123] This invention first provides a driving substrate for providing a driving signal. The driving substrate has multiple pads. Each micro-LED is transferred to the driving substrate and soldered to its corresponding pad. Next, an insulating layer is formed on each micro-LED and the driving substrate. The insulating layer includes a first opening exposing the driving substrate and a second opening exposing the surface of the micro-LED facing away from the driving substrate, with one micro-LED corresponding to one first opening and one second opening. Finally, a sidewall electrode is formed on the side of the insulating layer facing away from the driving substrate, with one sidewall electrode corresponding to one micro-LED. A portion of the sidewall electrode covers the surface of the insulating layer facing away from the micro-LED's sidewall. The sidewall electrode is electrically connected to the driving substrate through the first opening. Thus, by controlling the driving signal of the driving substrate, a certain potential can be provided to the sidewall electrode. This potential restricts the flow of charge carriers within the micro-LED, suppresses sidewall leakage current, reduces non-radiative recombination, and improves the luminous efficiency of the micro-LED 20.

[0124] Figures 9a to 9d A cross-sectional structural diagram corresponding to each step of the manufacturing method of the display device provided in the embodiment of the present invention.

[0125] Specifically, refer to Figure 9a The method for manufacturing a display device provided in this embodiment of the invention first provides a driving substrate 10 for providing driving signals. The driving substrate 10 includes a substrate 101 and a driving circuit layer 102. The surface of the driving circuit layer 102 has pads P for soldering micro light-emitting diodes. After transferring each micro light-emitting diode 20 above the driving substrate 10 and aligning it with the pads P, each micro light-emitting diode 20 is soldered to the corresponding pad P on the driving substrate 10.

[0126] The miniature light-emitting diode 20 includes a first doped layer 201 near the driving substrate 10, a light-emitting layer 202 on the side of the first doped layer 201 away from the driving substrate 10, and a second doped layer 203 on the side of the light-emitting layer 202 away from the first doped layer 201. The first doped layer 201 can be a P-type doped layer, and the second doped layer 203 can be an N-type doped layer; or the first doped layer 201 can be an N-type doped layer, and the second doped layer 203 can be a P-type doped layer; the light-emitting layer 202 can be a multi-quantum-well layer.

[0127] Reference Figure 9bAn insulating layer 30 is formed on each micro-LED 20 and the driving substrate 10. The insulating layer 30 can be formed by depositing insulating materials such as SiO2, SiN2, or Al2O3 onto the surface of the driving circuit layer 102 and each micro-LED 20 using CVD or ALD processes. Then, the insulating layer 30 is etched to form a first opening S1 and a second opening S2. The first opening S1 exposes the driving substrate 10, and the second opening S2 exposes the second doped layer 203.

[0128] The insulating layer 30 can repair the sidewall defects of the micro LED 20, which to some extent avoids the phenomenon of sidewall leakage current of the micro LED 20, thereby reducing the occurrence of non-radiative recombination and improving the luminous efficiency of the micro LED 20.

[0129] Reference Figure 9c Sidewall electrodes 40 are formed on the surface of insulating layer 30 away from driving substrate 10 and on the surface of insulating layer 30 away from the first doped layer 201 of micro light-emitting diode 20. The sidewall electrodes 40 cover a portion of the insulating layer 30 away from the sidewall of micro light-emitting diode 20. The surface of the insulating layer 30 away from the driving substrate 10 does not exceed the surface of the light-emitting layer 202 away from the driving substrate 10. The sidewall electrodes 40 are electrically connected to driving circuit layer 102 through first opening S1.

[0130] The height of the sidewall electrode 40 does not exceed that of the light-emitting layer 202, therefore the sidewall electrode 40 is located at the position of the first doped layer 201. Applying an electrical signal to the sidewall electrode 40 only promotes the carriers in the first doped layer 201 and does not affect the second doped layer 203. Applying an electrical signal to the sidewall electrode 40 effectively suppresses sidewall leakage current in the region of the first doped layer 201, reduces non-radiative recombination, and improves the luminous efficiency of the micro-LED 20.

[0131] Reference Figure 9d A filling layer 50 is formed on the side of the sidewall electrode 40 and the insulating layer 30 facing away from the driving substrate 10. Finally, a common electrode 60 is formed on the filling layer 50 and the side of the micro-light-emitting diode 20 facing away from the driving substrate 10. The common electrode 60 is electrically connected to the second doped layer 203 through the second opening S2, thus completing the process as described above. Figure 1a The fabrication of the display device shown.

[0132] Figures 10a to 10c This is a cross-sectional structural diagram of each step in the manufacturing method of another display device provided in an embodiment of the present invention.

[0133] Reference Figure 10aIn the embodiment provided by the present invention, after the insulating layer 30 is formed, a first filling layer 51 is formed on the side of the insulating layer 30 away from the driving substrate 10. The second filling layer 51 includes a third opening S3 that exposes the driving substrate 10, and the third opening S3 corresponds one-to-one with the first opening S1.

[0134] Reference Figure 10b Sidewall electrodes 40 are formed on the side of the first filling layer 51 facing away from the insulating layer 30 and on the surface of the second doped layer 203 of the insulating layer 30 facing away from the micro-light-emitting diode 20. The sidewall electrodes 40 cover a portion of the insulating layer 30 facing away from the sidewall of the micro-light-emitting diode 20, but do not exceed the surface of the light-emitting layer 202 facing the driving substrate 10. The sidewall electrodes 40 are electrically connected to the driving substrate 10 through the first opening S1 and the third opening S3.

[0135] The lowest height of the sidewall electrode 40 does not exceed the lowest height of the light-emitting layer 202, therefore the sidewall electrode 40 is located at the position of the second doped layer 203. Applying an electrical signal to the sidewall electrode 40 only promotes the carriers in the second doped layer 203 and does not affect the first doped layer 201. Applying an electrical signal to the sidewall electrode 40 effectively suppresses sidewall leakage current in the region of the second doped layer 203, reduces non-radiative recombination, and improves the luminous efficiency of the micro-LED 20.

[0136] Reference Figure 10c A second filling layer 52 is formed on the side of the sidewall electrode 40 opposite to the first filling layer 51. Finally, a common electrode 60 is formed on the side of the second filling layer 52 and the micro-light-emitting diode 20 opposite to the driving substrate 10. The common electrode 60 is electrically connected to the second doped layer 203 through the second opening S2, thus completing the process as described above. Figure 5 The fabrication of the display device shown.

[0137] Figures 11a to 11e This is a cross-sectional structural diagram of each step in the manufacturing method of another display device provided in an embodiment of the present invention.

[0138] Reference Figure 11a After forming the driving substrate 10 and the micro-light-emitting diodes 20, an insulating layer 30 is formed on each micro-light-emitting diode 20 and the driving substrate 10. After patterning the insulating layer, a first portion S1-1 and a second portion S1-2 of the first opening, as well as a second opening S2, are formed. The first portion S1-1 and the second portion S1-2 expose the driving substrate, and the second opening S2 exposes the second doped layer 203.

[0139] Reference Figure 11bA first sidewall electrode 41 is formed on the surface of the insulating layer 30 away from the driving substrate 10 and on the surface of the insulating layer 30 away from the first doped layer 201 of the micro light-emitting diode 20. The first sidewall electrode 41 is electrically connected to the driving substrate 10 through the first part S1-1.

[0140] In this design, the surface of the first sidewall electrode 41 covering the insulating layer 30 away from the sidewall of the micro-LED 20, away from the driving substrate 10, does not exceed the surface of the light-emitting layer 202 away from the driving substrate 10. The height of the first sidewall electrode 41 does not exceed the light-emitting layer 202, therefore the first sidewall electrode 41 is located at the position of the first doped layer 201. After applying an electrical signal to the first sidewall electrode 41, it only promotes the carriers in the first doped layer 201 and does not affect the second doped layer 203. Applying an electrical signal to the first sidewall electrode 41 can effectively suppress the sidewall leakage current in the region of the first doped layer 201, reduce the occurrence of non-radiative recombination, and improve the luminous efficiency of the micro-LED 20.

[0141] Reference Figure 11c A first filling layer 51 is formed on the side of the first sidewall electrode 41 and the insulating layer 30 away from the driving substrate 10. A third opening S3 is formed by patterning the first filling layer 51. The third opening S2 corresponds one-to-one with the second part S1-2, and the driving substrate 10 can be exposed.

[0142] Reference Figure 11d A second sidewall electrode 42 is formed on the side of the first filling layer 51 away from the insulating layer 30 and on the surface of the second doped layer 203 of the insulating layer 30 away from the micro light-emitting diode 20. The second sidewall electrode 42 is electrically connected to the driving substrate 10 through the third opening S3 and the second part S1-2.

[0143] In this design, the surface of the second sidewall electrode 42 covering the portion of the insulating layer 30 facing away from the sidewall of the micro-LED 20, which is opposite to the driving substrate 10, does not exceed the surface of the light-emitting layer 202 facing the driving substrate 10. The lowest height of the second sidewall electrode 42 does not exceed the lowest height of the light-emitting layer 202; therefore, the second sidewall electrode 42 is located at the position of the second doped layer 203. Applying an electrical signal to the second sidewall electrode 42 only promotes the carriers in the second doped layer 203 and does not affect the first doped layer 201. Applying an electrical signal to the second sidewall electrode 42 effectively suppresses sidewall leakage current in the region of the second doped layer 202, reduces non-radiative recombination, and improves the luminous efficiency of the micro-LED 20.

[0144] Reference Figure 11eA second filling layer 52 is formed on the side of the second sidewall electrode 42 opposite to the first filling layer 51. Finally, a common electrode 60 is formed on the side of the second filling layer 52 and the micro-light-emitting diode 20 opposite to the driving substrate 10. The common electrode 60 is electrically connected to the second doped layer 203 through the second opening S2, thus completing the process as described above. Figure 7 The fabrication of the display device shown.

[0145] According to the first inventive concept, setting an insulating layer on the sidewall of a micro light-emitting diode can repair sidewall defects of the micro light-emitting diode and suppress nonradiative recombination of charge carriers to a certain extent.

[0146] According to the second inventive concept, setting a sidewall electrode on the surface of the insulating layer away from the sidewall of the micro LED can suppress the sidewall leakage current of the micro LED, reduce the occurrence of non-radiative recombination, and improve the luminous efficiency of the micro LED.

[0147] According to the third inventive concept, a filling layer is further provided on the side of the sidewall electrode and the insulating layer facing away from the driving substrate. This filling layer is used to insulate and protect the sidewall electrode and to flatten the surface of the display device. The common electrode is located on the side of the filling layer facing away from the driving substrate and is electrically connected to the micro-light-emitting diode through a second opening in the insulating layer.

[0148] According to the fourth inventive concept, the common electrode is set in a whole layer, and a ring of common electrode lines is set at the edge of the driving substrate. The filling layer and the insulating layer form an annular through groove corresponding to the position of the common electrode lines. The common electrode is interconnected with the common electrode lines through the annular through groove, thereby improving the voltage drop problem generated by the common electrode.

[0149] According to the fifth inventive concept, a micro light-emitting diode includes a first doped layer close to the driving substrate, a second doped layer away from the driving substrate, and a light-emitting layer located between the first and second doped layers. The first and second doped layers use the same matrix material but with opposite doping types; the light-emitting layer is a multi-quantum-well layer. The micro light-emitting diode can have a vertical or horizontal structure.

[0150] According to the sixth inventive concept, the sidewall electrode is located on the insulating layer on the sidewall surface of the first doped layer, and the sidewall electrode is electrically connected to the driving substrate through a first opening in the insulating layer. The surface of the sidewall electrode facing away from the driving substrate does not exceed the surface of the light-emitting layer facing away from the driving substrate. After an electrical signal is applied, the sidewall electrode has a driving effect on the charge carriers in the first doped layer, but has no effect on the second doped layer, thereby reducing leakage current.

[0151] According to the seventh inventive concept, the potential of the sidewall electrode located on one side of the first doped layer is equal to the potential applied to the first doped layer. The sidewall electrode can be connected to the pad via a driving substrate, or directly connected to the pad.

[0152] According to the eighth inventive concept, the sidewall electrode is located above the first filling layer and on the insulating layer on the sidewall surface of the second doped layer. The sidewall electrode is electrically connected to the driving substrate through a first opening in the insulating layer and a third opening in the first filling layer. The surface of the sidewall electrode facing the driving substrate does not exceed the surface of the light-emitting layer facing the driving substrate. After an electrical signal is applied, the sidewall electrode promotes the carriers in the second doped layer without affecting the first doped layer, thereby reducing leakage current.

[0153] According to the ninth inventive concept, the potential of the sidewall electrode located on one side of the second doped layer is equal to the potential applied to the second doped layer.

[0154] According to the tenth inventive concept, the sidewall electrode includes a first sidewall electrode and a second sidewall electrode. The first sidewall electrode is located on an insulating layer on the sidewall surface of the first doped layer, and is electrically connected to the driving substrate through a first portion of the insulating layer. A first filling layer is located on the first sidewall electrode, and a second sidewall electrode is located on the first filling layer and on an insulating layer on the sidewall surface of the second doped layer. The sidewall electrode is electrically connected to the driving substrate through a second portion of the insulating layer and a third opening in the first filling layer. After an electrical signal is applied, the first sidewall electrode promotes the charge carriers in the first doped layer but has no effect on the second doped layer. After an electrical signal is applied, the second sidewall electrode promotes the charge carriers in the second doped layer but has no effect on the first doped layer, thereby reducing leakage current.

[0155] According to the eleventh inventive concept, the potential of the first sidewall electrode located on one side of the first doped layer is equal to the potential applied by the first doped layer, and the potential of the second sidewall electrode located on one side of the second doped layer is equal to the potential applied by the second doped layer.

[0156] According to the twelfth inventive concept, the shape of the first opening is set as a dot, which simplifies the process of forming the through hole.

[0157] According to the thirteenth inventive concept, the first opening is designed to be annular to increase the contact area between the sidewall electrode and the driving substrate and reduce the contact resistance.

[0158] According to the fourteenth inventive concept, the method for manufacturing the display device includes:

[0159] Each miniature light-emitting diode is transferred onto the driving substrate;

[0160] An insulating layer is formed on each micro LED and the driving substrate; the insulating layer includes a first opening that exposes the driving substrate and a second opening that exposes the surface of the micro LED facing away from the driving substrate; one micro LED corresponds to one first opening and one second opening;

[0161] A sidewall electrode is formed on the side of the insulating layer away from the driving substrate; one sidewall electrode corresponds to one micro light-emitting diode, and a portion of the sidewall electrode covers the surface of the insulating layer away from the sidewall of the micro light-emitting diode; the sidewall electrode is electrically connected to the driving substrate through a first opening.

[0162] According to the fifteenth inventive concept, a sidewall electrode is formed on the side of the insulating layer opposite to the driving substrate, including:

[0163] A sidewall electrode is formed on the surface of the insulating layer away from the driving substrate; the sidewall electrode covers a portion of the insulating layer away from the sidewall of the micro LED, and the surface of the side of the light-emitting layer away from the driving substrate does not exceed the surface of the light-emitting layer away from the driving substrate.

[0164] A filling layer is formed on the side of the sidewall electrode and the insulating layer that is away from the driving substrate;

[0165] A common electrode is formed on the side of the fill layer and the micro-light-emitting diode facing away from the driving substrate; the common electrode is electrically connected to the second doped layer through the second opening;

[0166] According to the sixteenth inventive concept, a sidewall electrode is formed on the side of the insulating layer opposite to the driving substrate, including:

[0167] A first filling layer is formed on the side of the insulating layer away from the driving substrate; the first filling layer includes a third opening that exposes the driving substrate, and the third opening corresponds one-to-one with the first opening;

[0168] A sidewall electrode is formed on the surface of the first filling layer and the insulating layer facing away from the driving substrate. The sidewall electrode covers a portion of the insulating layer facing away from the sidewall of the micro light-emitting diode, and the surface of the insulating layer facing the driving substrate does not exceed the surface of the light-emitting layer facing the driving substrate. The sidewall electrode is electrically connected to the driving substrate through the first opening and the third opening.

[0169] A second filling layer is formed on the side of the sidewall electrode and the first filling layer that is away from the driving substrate;

[0170] A common electrode is formed on the side of the second filling layer and the micro light-emitting diode away from the driving substrate; the common electrode is electrically connected to the second doped layer through the second opening;

[0171] According to the seventeenth inventive concept, the sidewall electrode is divided into a first sidewall electrode and a second sidewall electrode, and the first opening is divided into a first part and a second part;

[0172] A sidewall electrode is formed on the side of the insulating layer away from the driving substrate, including:

[0173] A first sidewall electrode is formed on the surface of the insulating layer away from the driving substrate; the first sidewall electrode covers a portion of the insulating layer away from the sidewall of the micro light-emitting diode, and the surface of the light-emitting layer away from the driving substrate does not exceed the surface of the light-emitting layer away from the driving substrate; the first sidewall electrode is electrically connected to the driving substrate through a first part.

[0174] A first filling layer is formed on the side of the first sidewall electrode and the insulating layer that is away from the driving substrate; the first filling layer includes a third opening that exposes the driving substrate, and the third opening corresponds one-to-one with the second part;

[0175] A second sidewall electrode is formed on the surface of the first filling layer and the insulating layer facing away from the driving substrate; the second sidewall electrode covers a portion of the insulating layer facing away from the sidewall of the micro light-emitting diode, and the surface of the insulating layer facing away from the driving substrate does not exceed the surface of the light-emitting layer facing the driving substrate; the second sidewall electrode is electrically connected to the driving substrate through a third opening and a second part.

[0176] A second filling layer is formed on the side of the second sidewall electrode and the first filling layer that is away from the driving substrate;

[0177] A common electrode is formed on the side of the second filling layer and the micro-light-emitting diode away from the driving substrate; the common electrode is electrically connected to the second doped layer through a second opening.

[0178] Although preferred embodiments of the invention have been described, those skilled in the art, upon learning the basic inventive concept, can make other changes and modifications to these embodiments. Therefore, the appended claims are intended to be interpreted as including both the preferred embodiments and all changes and modifications falling within the scope of the invention.

[0179] Obviously, those skilled in the art can make various modifications and variations to this invention without departing from its spirit and scope. Therefore, if these modifications and variations fall within the scope of the claims of this invention and their equivalents, this invention also intends to include these modifications and variations.

Claims

1. A display device, characterized in that, include: A driving substrate, used to provide driving signals; Multiple miniature light-emitting diodes; The micro light-emitting diode includes: a first doped layer located on the driving substrate and electrically connected to the driving substrate; a light-emitting layer located on the side of the first doped layer opposite to the driving substrate; and a second doped layer located on the side of the light-emitting layer opposite to the first doped layer. An insulating layer continuously covers the surface of the driving substrate and each of the micro-light-emitting diodes; the insulating layer includes a first opening exposing the driving substrate and a second opening exposing the second doped layer; the first opening is divided into a first part and a second part; each micro-light-emitting diode corresponds to one first opening and one second opening; First fill layer and second fill layer; Multiple sidewall electrodes are provided, each sidewall electrode corresponding to one micro-light-emitting diode (LED). Each sidewall electrode includes a first sidewall electrode and a second sidewall electrode. The first sidewall electrode covers the surface of the insulating layer opposite to the driving substrate. The portion of the insulating layer opposite to the sidewall of the micro-light-emitting diode that is opposite to the driving substrate does not exceed the surface of the light-emitting layer opposite to the driving substrate. The first sidewall electrode is electrically connected to the driving substrate via a first portion. A first filling layer covers the insulating layer and the surface of the first sidewall electrode opposite to the driving substrate. The first filling layer includes a third opening exposing the driving substrate, the third opening corresponding to a second portion. The second sidewall electrode covers the first filling layer and the surface of the insulating layer opposite to the driving substrate. The portion of the insulating layer opposite to the sidewall of the micro-light-emitting diode facing the driving substrate does not exceed the surface of the light-emitting layer facing the driving substrate. The second sidewall electrode is electrically connected to the driving substrate via the second portion and the third opening. The second filling layer covers the second sidewall electrode and the surface of the first filling layer opposite to the driving substrate. A common electrode is located on the side of the second filling layer and the micro light-emitting diode away from the driving substrate. The common electrode is electrically connected to the second doped layer through the second opening. The second sidewall electrode is in contact with the common electrode.

2. The display device as claimed in claim 1, characterized in that, The first doped layer is a P-type doped layer, and the second doped layer is an N-type doped layer; or, the first doped layer is an N-type doped layer, and the second doped layer is a P-type doped layer; the light-emitting layer is a quantum well layer.

3. The display device as described in claim 1 or 2, characterized in that, The first opening is either dot-shaped or annular in shape.

4. The display device as described in claim 1 or 2, characterized in that, The potential of the sidewall electrode is equal to the potential of the doped layer side adjacent to the sidewall electrode.

5. A method for manufacturing a display device, characterized in that, include: Each miniature light-emitting diode is transferred onto the driving substrate; The micro light-emitting diode includes a first doped layer near the driving substrate, a light-emitting layer located on the side of the first doped layer away from the driving substrate, and a second doped layer located on the side of the light-emitting layer away from the first doped layer. An insulating layer is formed on each of the micro light-emitting diodes and the driving substrate; the insulating layer includes a first opening exposing the driving substrate and a second opening exposing the surface of the micro light-emitting diodes facing away from the driving substrate. One of the micro LEDs corresponds to one first opening and one second opening; A sidewall electrode is formed on the side of the insulating layer opposite to the driving substrate; Each sidewall electrode corresponds to one micro LED, and a portion of the sidewall electrode covers the surface of the insulating layer opposite to the sidewall of the micro LED. The sidewall electrode is electrically connected to the driving substrate through the first opening; The sidewall electrode is divided into a first sidewall electrode and a second sidewall electrode, and the first opening is divided into a first part and a second part. The method of forming a sidewall electrode on the side of the insulating layer opposite to the driving substrate includes: A first sidewall electrode is formed on the surface of the insulating layer opposite to the driving substrate; the first sidewall electrode covers a portion of the insulating layer opposite to the sidewall of the micro LED, and the surface of the insulating layer opposite to the driving substrate does not exceed the surface of the light-emitting layer opposite to the driving substrate; the first sidewall electrode is electrically connected to the driving substrate through the first portion; A first filling layer is formed on the side of the first sidewall electrode and the insulating layer opposite to the driving substrate; the first filling layer includes a third opening exposing the driving substrate, the third opening corresponding one-to-one with the second part; A second sidewall electrode is formed on the surface of the first filling layer and the insulating layer facing away from the driving substrate; the second sidewall electrode covers a portion of the insulating layer facing away from the sidewall of the micro LED, but does not exceed the surface of the light-emitting layer facing the driving substrate; the second sidewall electrode is electrically connected to the driving substrate through the third opening and the second portion; A second filling layer is formed on the side of the second sidewall electrode and the first filling layer that is away from the driving substrate; A common electrode is formed on the side of the second filling layer and the micro light-emitting diode away from the driving substrate; the common electrode is electrically connected to the second doped layer through the second opening, and the second sidewall electrode is in contact with the common electrode.

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