A method for preparing a passivation layer for perovskite cells and uses thereof

Abstract

The application provides a method for preparing a perovskite cell passivation layer and application. The method comprises the following steps: firstly, mixing an alkyl halide ammonium salt and a solvent to obtain a mixed solution, then performing light aging treatment on the mixed solution, and filtering to obtain a passivation layer precursor solution; and then coating the obtained passivation layer precursor solution on the surface of a perovskite thin film, and performing annealing treatment to obtain the perovskite cell passivation layer. By introducing a light-aged long alkyl chain halide ammonium salt solution as an interface modification layer at the interface layer of a perovskite solar cell, the perovskite thin film interface defects are passivated, and the photovoltaic performance and stability of the perovskite solar cell are improved.

Description

Technical Field

[0001] This invention belongs to the field of perovskite battery technology, specifically relating to a method for preparing a perovskite battery passivation layer and its application. Background Technology

[0002] Perovskite semiconductor materials have gained popularity among researchers due to their combination of advantages in material properties (high absorption coefficient, tunable band gap, low defect state density, small exciton binding energy, and long carrier diffusion length) and fabrication process (low-cost solution preparation).

[0003] In recent years, the power conversion efficiency (PCE) of organic-inorganic hybrid perovskite solar cells (PSCs) has reached 25.7%, but this is far below their maximum theoretical efficiency (>30%), which is the Shockley-Queisser limit. This is because defect accumulation at the bulk phase and interface of polycrystalline perovskite films causes nonradiative recombination of charge carriers, thus limiting further performance improvements. Intrinsic defects in perovskite materials are a significant obstacle to their commercialization. Perovskite crystal defects can be formed by point defects or higher-dimensional defects (dislocations, grain boundaries, and precipitates).

[0004] Natural point defects in polycrystalline perovskite thin films are considered trap states for charge carriers, including vacancies, antivacancies, and interstitials. However, due to the halogenated lattice structure of perovskite, high charge transport capabilities can still be achieved even with high point defect densities. In contrast, its photoelectric properties are more sensitive to high-dimensional defects, most of which are located at grain boundaries or surfaces and are referred to as interface defects. The presence of high defect density in interface regions limits further improvements in the photovoltaic performance and long-term stability of perovskite. These interface defects mainly originate from the sublimation of organic components during thermal annealing and the lack of chemical components on the surface. Therefore, reducing interface defects through surface passivation is a common method.

[0005] Therefore, there is an urgent need in this field to develop a surface passivation treatment method and passivation layer that can not only reduce interface defects, but also improve the photovoltaic performance and stability of perovskite solar cells. Summary of the Invention

[0006] To address the shortcomings of existing technologies, the present invention aims to provide a method and application for preparing a passivation layer for perovskite solar cells. The present invention introduces a photo-aged long-chain alkyl-chain ammonium halide salt solution as an interface modification layer into the interface layer of a perovskite solar cell, thereby passivating interface defects in the perovskite thin film and improving the photovoltaic performance and stability of the perovskite solar cell.

[0007] To achieve this objective, the present invention adopts the following technical solution:

[0008] In a first aspect, the present invention provides a method for preparing a passivation layer for a perovskite solar cell, the method comprising the following steps:

[0009] (1) The alkyl halide ammonium salt and solvent are mixed to obtain a mixed solution, and then the mixed solution is subjected to photo-aging treatment and filtered to obtain a passivation layer precursor solution;

[0010] (2) The passivation layer precursor solution obtained in step (1) is coated on the surface of the perovskite film and annealed to obtain the perovskite battery passivation layer.

[0011] This invention utilizes phototreatment of alkyl ammonium halide salt solutions to generate halide ions. These halide ions not only passivate halide ion defects but also readily react with Pb. 2+ The reaction passivated the undercoordinated Pb in the perovskite. 2+ Secondly, the ammonium ions in phototreated alkyl ammonium halide salts can form hydrogen bonds with halide ions, thereby fixing the halide ions; some halide ions in phototreated alkyl ammonium halide salts can also fill halogen atom vacancies; in addition, alkyl ammonium halide salts can effectively reduce interfacial nonradiative recombination, improve the carrier transport capacity at the interface, passivate perovskite film defects, and improve FA (fatal affinity). 0.85 Cs 0.15 The quality of PbI3 perovskite films was improved. Finally, alkyl halide ammonium salt materials exhibit good hydrophobicity, which enhances the FA (Features, Fiber, and Fiber) properties. 0.85 Cs 0.15 The water contact angle of PbI3 perovskite films improves the air stability of perovskite films and devices.

[0012] Preferably, the alkyl ammonium halide salt in step (1) has an AB structure, wherein A is R-NH3. + or R-NH4 + Any one of them, B is Cl - ,Br - or I - Any one of them.

[0013] In this invention, R-NH3 + or R-NH4 + The R group in the text refers to an alkyl group, and B represents Cl. - ,Br - or I - Any one of them, where Cl - ,Br - or I - These refer to chloride ions, bromide ions, and iodide ions, respectively.

[0014] Preferably, the alkyl ammonium halide salt in step (1) has an AB structure, wherein A is R-NH4. + B is I- .

[0015] In this invention, by further optimizing the structure of the alkyl iodine ammonium salt, the passivation effect of the perovskite thin film is optimized, resulting in a perovskite solar cell with good photovoltaic performance.

[0016] Preferably, the number of carbon atoms in the main chain of the alkyl haloammonium salt in step (1) is greater than or equal to 6, and more preferably, the number of carbon atoms in the main chain is greater than or equal to 8. For example, it can be 6, 7, 8, 9, 10, 11, or 12. For the sake of brevity, the values ​​in the above range will not be listed one by one.

[0017] In this invention, by introducing long-chain alkyl haloammonium salts, the quality of the perovskite thin film is improved, the surface defects of the prepared film are reduced, and the photoelectric performance and stability of the perovskite solar cell are improved accordingly.

[0018] Preferably, the alkyl ammonium halide in step (1) includes any one or a combination of at least two of octyl ammonium iodide (OAI), dodecyl ammonium iodide (DAI), or tetrabutyl ammonium iodide (TBAI).

[0019] Preferably, the solvent in step (1) includes any one of isopropanol (IPA), methanol, ethanol or ethylene glycol.

[0020] Preferably, the concentration of the mixed solution in step (1) is 0.5-2 mg / mL, for example, it can be 0.5 mg / mL, 0.6 mg / mL, 0.7 mg / mL, 0.8 mg / mL, 0.9 mg / mL, 1 mg / mL, 1.2 mg / mL, 1.5 mg / mL, 1.7 mg / mL, 1.8 mg / mL, or 2 mg / mL.

[0021] Preferably, the mixing in step (1) is carried out under stirring.

[0022] Preferably, the mixing temperature in step (1) is 60-80℃, for example, 60℃, 62℃, 65℃, 68℃, 70℃, 72℃, 75℃, 78℃, or 80℃.

[0023] Preferably, the photoaging treatment in step (1) is performed under sunlight.

[0024] In this invention, the photoaging treatment under sunlight specifically refers to treatment in an aging chamber that simulates standard sunlight.

[0025] In this invention, photoaging is performed under sunlight, which modifies the solution and generates halide ions, which can passivate surface defects of the perovskite film, improve the quality of the perovskite film, and ultimately obtain a perovskite solar cell with good photovoltaic performance and stability.

[0026] Preferably, the photoaging treatment time in step (1) is 60-120 min, for example, it can be 60 min, 70 min, 80 min, 90 min, 100 min, 110 min, or 120 min. For the sake of brevity, the values ​​in the above range will not be listed one by one.

[0027] Preferably, the coating in step (2) includes a scraping method.

[0028] Preferably, the scraping rate is 15-20 mm / s, for example, 15 mm / s, 16 mm / s, 17 mm / s, 18 mm / s, 19 mm / s, or 20 mm / s.

[0029] Preferably, the annealing temperature in step (2) is 70-120℃, for example, 70℃, 85℃, 87℃, 90℃, 92℃, 95℃, 98℃, 100℃, 110℃, or 120℃.

[0030] Preferably, the annealing time in step (2) is 5-15 min, for example, 5 min, 6 min, 7 min, 8 min, 9 min, 10 min, 11 min, 13 min, or 15 min.

[0031] Preferably, the perovskite thin film prepared in step (2) is prepared as follows: FA 0.85 Cs 0.15 The PbI3 perovskite precursor solution was coated onto the surface of the hole transport layer, and the coated film was subjected to air blowing and annealing to obtain the perovskite film.

[0032] Preferably, the FA 0.85 Cs 0.15 The coating rate of the PbI3 perovskite precursor solution is 10-15 mm / s, for example, 10 mm / s, 11 mm / s, 12 mm / s, 13 mm / s, 14 mm / s, or 15 mm / s.

[0033] Preferably, the annealing temperature of the coated film is 100-150℃, for example, 100℃, 105℃, 110℃, 115℃, 120℃, 130℃, 140℃, or 150℃; and the time is 30-60min, for example, 30min, 35min, 40min, 45min, 50min, 55min, or 60min.

[0034] In a second aspect, the present invention provides a perovskite solar cell passivation layer, which is prepared by the method described in the first aspect.

[0035] Thirdly, the present invention provides a perovskite solar cell, the perovskite solar cell including the perovskite solar cell passivation layer according to the second aspect.

[0036] In this invention, the perovskite solar cell prepared using the passivation layer provided by this invention exhibits significantly improved photoelectric performance and air stability.

[0037] Compared with the prior art, the present invention has the following beneficial effects:

[0038] This invention provides a passivation layer for perovskite solar cells. By introducing an alkyl ammonium halide salt, the ammonium ions in the salt can form hydrogen bonds with halide ions, thereby immobilizing the halide ions. Some halide ions in the alkyl ammonium halide salt can also fill halogen atom vacancies. The halide ions generated by the alkyl ammonium halide salt more readily react with Pb. 2+ The reaction passivated the undercoordinated Pb in the perovskite. 2+ Secondly, alkyl ammonium halide salts can effectively reduce interfacial nonradiative recombination, improve carrier transport capacity at the interface, passivate defects in perovskite films, and improve FA (fatal affinity). 0.85 Cs 0.15 The quality of PbI3 perovskite films was improved. Finally, alkyl halide ammonium salt materials exhibit good hydrophobicity, which enhances the FA (Features, Fiber, and Fiber) properties. 0.85 Cs 0.15 The water contact angle of PbI3 perovskite films improves the air stability of perovskite films and devices.

[0039] Furthermore, the photoaging process provided by this invention has the advantages of simple operation, stable effect, and low cost. Attached Figure Description

[0040] Figure 1 A comparison of the ultraviolet absorption spectra of OAI and OAI (IPA) provided in Example 1;

[0041] Figure 2 A comparison diagram of the water contact angles of the OAI(IPA) passivated perovskite film and the OAI(IPA) unpassivated perovskite film provided in Example 1;

[0042] Figure 3 The diagram shows the structure of the perovskite solar cell provided in Application Example 1, where 1 is the substrate electrode, 2 is the hole transport layer, 3 is the perovskite absorber layer, 4 is the passivation layer, 5 is the electron transport layer, and 6 is the back electrode.

[0043] Figure 4 A comparison of air stability between the OAI(IPA) passivated perovskite solar cell provided in Example 1 and the unencapsulated OAI(IPA) unpassivated perovskite solar cell. Detailed Implementation

[0044] The technical solution of the present invention will be further described below with reference to the accompanying drawings and specific embodiments. Those skilled in the art should understand that the embodiments described are merely illustrative of the present invention and should not be considered as specific limitations thereof.

[0045] Example 1

[0046] This embodiment provides a perovskite solar cell passivation layer and its preparation method, the method comprising the following steps:

[0047] (1) Octylammonium iodide and isopropanol were stirred at 70°C to obtain a mixed solution with a concentration of 1 mg / mL. The mixed solution was then subjected to photoaging treatment in an aging chamber simulating standard sunlight for 90 min. After filtration, a passivation layer precursor solution was obtained.

[0048] (2) FA 0.85 Cs 0.15 PbI3 perovskite precursor solution was coated onto the hole transport layer NiO. X The surface was coated at a scraping rate of 12 mm / s. The coated film was then purged with nitrogen using a nitrogen gun and placed on a hot plate for post-annealing at 105°C for 45 minutes to obtain FA. 0.85 Cs 0.15 PbI3 perovskite thin films;

[0049] (3) The passivation layer precursor solution obtained in step (1) is scraped onto the surface of the perovskite film at a rate of 17 mm / s and annealed at 90°C for 10 min to obtain the perovskite battery passivation layer.

[0050] Figure 1 The UV absorption spectra of OAI and OAI(IPA) provided in Example 1 show that I3 was generated after light treatment. - .

[0051] Figure 2The comparison diagram of the water contact angles of the OAI(IPA) passivated perovskite film and the OAI(IPA) unpassivated perovskite film provided in Example 1 shows that the good hydrophobicity of the alkyl iodine ammonium salt material improves the FA (fat-to-water) efficiency. 0.85 Cs 0.15 Water contact angle of PbI3 perovskite thin films.

[0052] Example 2

[0053] This embodiment provides a perovskite solar cell passivation layer and its preparation method, the method comprising the following steps:

[0054] (1) Octylammonium iodide and isopropanol were stirred at 65°C to obtain a mixed solution with a concentration of 0.8 mg / mL. The mixed solution was then subjected to photoaging treatment in an aging chamber simulating standard sunlight for 75 min. After filtration, a passivation layer precursor solution was obtained.

[0055] (2) FA 0.85 Cs 0.15 PbI3 perovskite precursor solution was coated onto the hole transport layer NiO. X The surface was coated at a scraping rate of 11 mm / s. The coated film was then purged with nitrogen using a nitrogen gun and placed on a hot plate for post-annealing at 130°C for 35 minutes to obtain FA. 0.85 Cs 0.15 PbI3 perovskite thin films;

[0056] (3) The passivation layer precursor solution obtained in step (1) is scraped onto the surface of the perovskite film at a rate of 16 mm / s and annealed at 100°C for 6 min to obtain the perovskite battery passivation layer.

[0057] Example 3

[0058] This embodiment provides a perovskite solar cell passivation layer and its preparation method, the method comprising the following steps:

[0059] (1) Octylammonium iodide and isopropanol were stirred at 75°C to obtain a mixed solution with a concentration of 1.5 mg / mL. The mixed solution was then subjected to photoaging treatment in an aging chamber simulating standard sunlight for 100 min. After filtration, a passivation layer precursor solution was obtained.

[0060] (2) FA 0.85 Cs 0.15 PbI3 perovskite precursor solution was coated onto the hole transport layer NiO. XThe surface was coated at a scraping rate of 13 mm / s. The coated film was then purged with nitrogen using a nitrogen gun and placed on a hot plate for post-annealing at 110°C for 55 minutes to obtain FA. 0.85 Cs 0.15 PbI3 perovskite thin films;

[0061] (3) The passivation layer precursor solution obtained in step (1) is scraped onto the surface of the perovskite film at a rate of 18 mm / s and annealed at 95°C for 8 min to obtain the perovskite battery passivation layer.

[0062] Example 4

[0063] This embodiment provides a perovskite solar cell passivation layer and its preparation method, the method comprising the following steps:

[0064] (1) Octylammonium iodide and isopropanol were stirred at 60°C to obtain a mixed solution with a concentration of 0.5 mg / mL. The mixed solution was then subjected to photoaging treatment in an aging chamber simulating standard sunlight for 60 min. After filtration, a passivation layer precursor solution was obtained.

[0065] (2) FA 0.85 Cs 0.15 PbI3 perovskite precursor solution was coated onto the hole transport layer NiO. X The surface is coated at a scraping rate of 10 mm / s; the coated film is then purged with nitrogen using a nitrogen gun, and then placed on a hot plate for post-annealing at 100℃ for 60 min to obtain FA. 0.85 Cs 0.15 PbI3 perovskite thin films;

[0066] (3) The passivation layer precursor solution obtained in step (1) is scraped onto the surface of the perovskite film at a speed of 15 mm / s and annealed at 85°C for 10 min to obtain the perovskite battery passivation layer.

[0067] Example 5

[0068] This embodiment provides a perovskite solar cell passivation layer and its preparation method, the method comprising the following steps:

[0069] (1) Octylammonium iodide and isopropanol were stirred at 80°C to obtain a mixed solution with a concentration of 2 mg / mL. The mixed solution was then subjected to photoaging in an aging chamber simulating standard sunlight for 120 min. After filtration, a passivation layer precursor solution was obtained.

[0070] (2) FA 0.85 Cs 0.15PbI3 perovskite precursor solution was coated onto the hole transport layer NiO. X The surface was coated at a scraping rate of 15 mm / s; the coated film was then purged with nitrogen using a nitrogen gun, and then placed on a hot plate for post-annealing at 120℃ for 40 min to obtain FA. 0.85 Cs 0.15 PbI3 perovskite thin films;

[0071] (3) The passivation layer precursor solution obtained in step (1) is scraped onto the surface of the perovskite film at a speed of 20 mm / s and annealed at 100°C for 5 min to obtain the perovskite battery passivation layer.

[0072] Example 6

[0073] The difference between this embodiment and embodiment 1 is that in step (3), annealing is performed at 70°C for 10 minutes, while the rest is the same as in embodiment 1.

[0074] Example 7

[0075] The difference between this embodiment and embodiment 1 is that in step (3), annealing is performed at 80°C for 10 minutes, while the rest is the same as in embodiment 1.

[0076] Example 8

[0077] The difference between this embodiment and embodiment 1 is that in step (3), annealing is performed at 100°C for 10 minutes, while the rest is the same as in embodiment 1.

[0078] Example 9

[0079] The difference between this embodiment and embodiment 1 is that in step (3), annealing is performed at 110°C for 10 minutes, while the rest is the same as in embodiment 1.

[0080] Example 10

[0081] The difference between this embodiment and embodiment 1 is that in step (3), annealing is performed at 120°C for 10 minutes, while the rest is the same as in embodiment 1.

[0082] Example 11

[0083] The difference between this embodiment and Example 1 is that octyl ammonium iodide in step (1) is replaced with dodecyltrimethylammonium iodide, while everything else is the same as in Example 1.

[0084] Example 12

[0085] The difference between this embodiment and Embodiment 1 is that octylammonium iodide in step (1) is replaced with tetrabutylammonium iodide, while all other aspects are the same as in Embodiment 1.

[0086] Comparative Example 1

[0087] The difference between this comparative example and Example 1 is that only step (2) is performed, and steps (1) and (3) are not performed. Everything else is the same as Example 1.

[0088] Comparative Example 2

[0089] The difference between this comparative example and Example 1 is that the photoaging treatment in step (1) is replaced by aging the mixed solution by standing for 90 minutes, while the rest is the same as Example 1.

[0090] Application Examples 1 to 12 and Comparative Application Examples 1 to 2

[0091] Perovskite solar cells were prepared using the passivation layers provided in Examples 1 to 12 and Comparative Examples 1 to 2, as shown in the figure. Figure 3 As shown, the preparation method is as follows:

[0092] Step 1: Prepare a hole transport layer (2) on the substrate electrode (1);

[0093] Step 2: Spin-coat a perovskite precursor solution onto the substrate electrode-hole transport layer, and then anneal it at 120°C for 40 min to prepare a perovskite absorber layer (3). The perovskite absorber layer is FA. 0.85 Cs 0.15 PbI3;

[0094] Step 3: Spin-coat OAI (IPA) solution onto the substrate electrode-hole transport layer-perovskite absorber layer and perform annealing treatment at a temperature of 85°C and a time of 14 min to prepare an OAI (IPA) passivation layer (4).

[0095] Step 4: C60 / BCP is deposited on the substrate electrode-hole transport layer-perovskite absorber layer-OAI(IPA) passivation layer to prepare the electron transport layer (5);

[0096] Step 5: Cu is deposited on the substrate electrode-hole transport layer-perovskite absorber layer-OAI(IPA) passivation layer-electron transport layer to prepare the back electrode (6).

[0097] Test conditions

[0098] The perovskite solar cells provided in Application Examples 1 to 12 and Comparative Application Examples 1 to 2 were tested, and the preparation methods are as follows:

[0099] (1) Photovoltaic Conversion Efficiency Test: Photovoltaic conversion efficiency (PCE) indicates the amount of light energy converted into electrical energy from incident light, and is a direct parameter used to judge the photovoltaic performance of perovskite solar cells. The photovoltaic parameters of perovskite solar cells include open-circuit voltage (V...). oc ), short-circuit current (J) sc The parameters are: fill factor (FF), PCE, and fill factor (V). PCE is determined by the other three characteristic parameters, and its value is V. oc J sc The ratio of the product of light intensity, fluorescence intensity, and photoluminescence (FF) to the incident light power. PCE testing instruments mainly include a solar simulator and a digital source meter. The solar simulator measures a light intensity of 100 mW / cm². 2 The digital source meter is a Keithley 2400. Instrument parameters are: backscan voltage 1.10~-0.1V, delay time 10ms. Standard battery I. sc =47.6mA / cm 2 1000W / m 2

[0100] The test results are shown in Table 1:

[0101] Table 1

[0102]

[0103] As can be seen from Table 1, compared with Example 1, Examples 6-10 show that as the annealing temperature gradually increases, the perovskite battery passivation layer prepared has good photoelectric properties. This is mainly because as the annealing temperature increases, the solvent in the perovskite precursor solution evaporates more easily, which is conducive to the nucleation and crystallization of perovskite and obtaining a perovskite film of better quality.

[0104] Compared with Example 1, Examples 11-12 show that the perovskite solar cells coated with the OAI (IPA) interface modification layer have better overall performance than the perovskite solar cells coated with the DTAI (IPA) and TBAI (IPA) interface modification layers.

[0105] A comparison of Example 1 and Comparative Examples 1-2 shows that, as Figure 4 As shown, the perovskite solar cell prepared by this invention with OAI(IPA) as the interface modification layer has significantly improved photoelectric performance and air stability compared with the solar cell without the interface modification layer; the perovskite solar cell with OAI(IPA) as the interface modification layer has significantly improved photoelectric performance and air stability compared with the solar cell with OAI interface modification layer obtained without photoaging treatment.

[0106] The applicant declares that the present invention is illustrated by the above embodiments, but the present invention is not limited to the above process steps, that is, it does not mean that the present invention must rely on the above process steps to be implemented. Those skilled in the art should understand that any improvements to the present invention, equivalent substitutions of the raw materials used in the present invention, addition of auxiliary components, selection of specific methods, etc., all fall within the protection scope and disclosure scope of the present invention.

Claims

1. A method for preparing a passivation layer for a perovskite solar cell, characterized in that, The method includes the following steps: (1) The alkyl halide ammonium salt and solvent are mixed to obtain a mixed solution, and then the mixed solution is subjected to photo-aging treatment and filtered to obtain a passivation layer precursor solution; (2) The passivation layer precursor solution obtained in step (1) is coated on the surface of the perovskite film and annealed to obtain the perovskite battery passivation layer. The photoaging treatment mentioned in step (1) is a photoaging treatment performed under sunlight.

2. The method according to claim 1, characterized in that, The alkyl halide salt described in step (1) has an AB structure, where A is R-NH3. + B is Cl - ,Br - Or I - Any one of them.

3. The method according to claim 2, characterized in that, The alkyl halide salt described in step (1) has an AB structure, where A is R-NH3. + B is I - .

4. The method according to claim 1, characterized in that, The number of carbon atoms in the main chain of the alkyl ammonium halide salt described in step (1) is greater than or equal to 6.

5. The method according to claim 4, characterized in that, The number of carbon atoms in the main chain of the alkyl ammonium halide salt described in step (1) is greater than or equal to 8.

6. The method according to claim 1, characterized in that, The alkyl ammonium halide salt mentioned in step (1) includes any one or a combination of at least two of octyl ammonium iodide, dodecyl ammonium iodide or tetrabutyl ammonium iodide.

7. The method according to claim 1, characterized in that, The solvent mentioned in step (1) includes any one of isopropanol, methanol, ethanol or ethylene glycol.

8. The method according to claim 1, characterized in that, The concentration of the mixed solution in step (1) is 0.5-2 mg / mL.

9. The method according to claim 1, characterized in that, The mixing described in step (1) is carried out under stirring.

10. The method according to claim 1, characterized in that, The mixing temperature in step (1) is 60-80℃.

11. The method according to claim 1, characterized in that, The photoaging treatment time in step (1) is 60-120 min.

12. The method according to claim 1, characterized in that, The coating process described in step (2) includes a scraping method.

13. The method according to claim 12, characterized in that, The scraping rate is 15-20 mm / s.

14. The method according to claim 1, characterized in that, The annealing temperature in step (2) is 70-120℃.

15. The method according to claim 1, characterized in that, The annealing process in step (2) takes 5-15 minutes.

16. The method according to claim 1, characterized in that, The preparation method of the perovskite thin film in step (2) is as follows: FA 0.85 Cs 0.15 The PbI3 perovskite precursor solution was coated onto the surface of the hole transport layer, and the coated film was subjected to air blowing and annealing to obtain the perovskite film.

17. The method according to claim 16, characterized in that, The FA 0.85 Cs 0.15 The PbI3 perovskite precursor solution was coated at a rate of 10-15 mm / s.

18. The method according to claim 16, characterized in that, The annealing temperature of the coated film is 100-150℃, and the time is 30-60 minutes.

19. A perovskite solar cell passivation layer, characterized in that, The perovskite solar cell passivation layer is prepared by the method according to any one of claims 1-18.

20. A perovskite battery, characterized in that, The perovskite solar cell includes the perovskite solar cell passivation layer according to claim 19.

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