Display panel, display device and manufacturing method

Abstract

The present invention provides a display panel, a display device, and a manufacturing method. The display panel includes: a base substrate and a WOLED light-emitting device disposed on the base substrate, wherein the display panel further includes: a light-transmitting microcavity adjustment layer disposed on the light-emitting side of the WOLED light-emitting device; wherein the microcavity adjustment layer includes at least one stacked silicon nitride sublayer and at least one silicon oxide sublayer. Using this display panel, by disposing the microcavity adjustment layer on the light-emitting side of the WOLED light-emitting device, the stacked silicon nitride sublayers and silicon oxide sublayers form a microcavity adjustment structure for adjusting the transmission optical path of red light, blue light, and green light emitted by the WOLED light-emitting device, thereby improving the luminous intensity of light of different colors and solving the problems of low energy utilization and large power loss in existing WOLED display technology.

Description

Technical Field

[0001] The present invention relates to the field of display technology, and in particular to a display panel, a display device, and a manufacturing method thereof. Background Art

[0002] Currently, white organic light-emitting diode (WOLED) display technology holds an irreplaceable position in the fields of large- and ultra-large-size TV displays, as well as ultra-high-resolution AR / VR displays. Unlike the widely used side-by-side RGB technology for smaller displays, WOLED's greatest advantage lies in its elimination of the need for a fine metal mask (FMM) during the manufacturing process, significantly reducing equipment costs.

[0003] Existing WOLED display technology typically uses a three-layer structure of blue (B) + red (R) + green (G) + blue (B) to achieve white light emission, and uses a color filter (CF) to separate white light into the three primary colors of RGB. The CF used in WOLED display technology is usually an absorptive type, and color conversion is completed by simply transmitting light. However, when white light passes through the CF, two colors of light in the corresponding red, green, or blue sub-pixels are absorbed and filtered out, resulting in low energy utilization and significant power loss. Summary of the Invention

[0004] The technical solution of the present invention aims to provide a display panel, a display device and a manufacturing method thereof, which are used to solve the problems of low energy utilization and large power loss in the prior art WOLED display technology.

[0005] An embodiment of the present invention further provides a display panel, comprising a base substrate and a WOLED light-emitting device disposed on the base substrate, wherein the display panel further comprises:

[0006] A light-transmitting microcavity adjustment layer is provided on the light-emitting side of the WOLED light-emitting device; wherein the microcavity adjustment layer comprises at least one silicon nitride sublayer and at least one silicon oxide sublayer stacked.

[0007] Optionally, in the display panel, in the microcavity adjustment layer, the silicon nitride sublayer and the silicon oxide sublayer are respectively arranged in an interval.

[0008] Optionally, in the display panel, the WOLED light-emitting device comprises an anode, a WOLED organic electroluminescent layer, and a cathode sequentially arranged above the base substrate, and the light emission direction of the WOLED light-emitting device is from the WOLED organic electroluminescent layer to the cathode;

[0009] The microcavity adjustment layer is connected to the cathode and is located on a side of the cathode away from the WOLED organic electroluminescent layer.

[0010] Optionally, in the display panel, the thickness of the cathode is between 5 nm and 10 nm.

[0011] Optionally, in the display panel, the microcavity adjustment layer further includes an indium zinc oxide (IZO) material sublayer, and the IZO material sublayer is connected to the cathode.

[0012] Optionally, in the display panel, the microcavity adjustment layer further comprises a first silicon oxide sublayer, a first silicon nitride sublayer, a second silicon oxide sublayer, and a second silicon nitride sublayer stacked and sequentially disposed on the IZO material sublayer;

[0013] The thickness of the first silicon oxide sublayer is between 200 angstroms and 600 angstroms, the thickness of the first silicon nitride sublayer is between 100 angstroms and 300 angstroms, the thickness of the second silicon oxide sublayer is between 500 angstroms and 1000 angstroms, and the thickness of the second silicon nitride sublayer is between 500 angstroms and 1000 angstroms.

[0014] Optionally, the display panel further comprises a transparent capacitor plate located between the base substrate and the WOLED light-emitting device; the transparent capacitor plate is electrically connected to the WOLED light-emitting device, and the light emitting direction of the WOLED light-emitting device is toward the base substrate;

[0015] The microcavity adjustment layer is connected to the transparent capacitor plate and is located on a side of the transparent capacitor plate away from the WOLED light-emitting device.

[0016] Optionally, in the display panel, the microcavity adjustment layer comprises a first silicon nitride sublayer, a first silicon oxide sublayer, and a second silicon nitride sublayer stacked and sequentially disposed on the transparent capacitor plate;

[0017] The thickness of the first silicon nitride sublayer is between 500 angstroms and 1500 angstroms, the thickness of the first silicon oxide sublayer is between 200 angstroms and 800 angstroms, and the thickness of the second silicon nitride sublayer is between 200 angstroms and 800 angstroms.

[0018] An embodiment of the present invention further provides a display device, comprising the display panel as described in any one of the above items.

[0019] An embodiment of the present invention further provides a manufacturing method, which is applied to the display panel as described in any one of the above items, and the manufacturing method includes:

[0020] Providing the substrate;

[0021] Fabricating the WOLED light-emitting device on the substrate;

[0022] Wherein, when the light emitting direction of the WOLED light emitting device is a direction away from the base substrate, the method further includes:

[0023] Fabricating the microcavity adjustment layer on the base substrate on which the WOLED light-emitting device is fabricated;

[0024] When the light emitting direction of the WOLED light emitting device is toward the base substrate, before manufacturing the WOLED light emitting device on the base substrate, the method further includes:

[0025] The microcavity adjustment layer is manufactured on the base substrate.

[0026] At least one of the above technical solutions in the specific embodiments of the present invention has the following beneficial effects:

[0027] The display panel according to the embodiment of the present invention is used. By providing a microcavity adjustment layer on the light-emitting side of the WOLED light-emitting device, a stacked silicon nitride sublayer and a silicon oxide sublayer are formed to form a microcavity adjustment structure. This is used to adjust the transmission optical path of red light, blue light, and green light emitted by the WOLED light-emitting device, thereby improving the luminous intensity of light of different colors. This solves the problems of low energy utilization and large power loss in the existing WOLED display technology. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 is a schematic cross-sectional structural diagram of a first embodiment of a display panel according to an embodiment of the present invention;

[0029] Figure 2 Schematic diagram of the structure of one embodiment of a WOLED organic electroluminescent layer;

[0030] Figure 3 A schematic diagram showing a spectrum comparison between the microcavity adjustment layer and the prior art when using the first embodiment;

[0031] Figure 4 Schematic diagram of the structure of the microcavity adjustment layer in embodiment 1;

[0032] Figure 5 is a schematic cross-sectional structural diagram of a second embodiment of a display panel according to an embodiment of the present invention;

[0033] Figure 6 Schematic diagram of the structure of the microcavity adjustment layer in the second embodiment;

[0034] Figure 7A schematic diagram showing a spectrum comparison between the microcavity adjustment layer and the prior art when using the second embodiment;

[0035] Figure 8 Schematic diagram of the manufacturing process of the display panel according to an embodiment of the present invention. DETAILED DESCRIPTION

[0036] In order to make the technical problems, technical solutions and advantages to be solved by the present invention clearer, a detailed description will be given below with reference to the accompanying drawings and specific embodiments.

[0037] To address the problems of low energy utilization and large power consumption losses in existing WOLED display technology, embodiments of the present invention provide a display panel. A microcavity adjustment layer is disposed on the light-emitting side of a WOLED light-emitting device. A microcavity adjustment structure is formed by stacking silicon nitride and silicon oxide sublayers. This structure is used to adjust the transmission path lengths of red, blue, and green light emitted by the WOLED light-emitting device, thereby improving the luminous intensity of light of different colors. This solves the problems of low energy utilization and large power consumption losses in existing WOLED display technology.

[0038] One embodiment of the present invention provides a display panel, comprising a base substrate and a WOLED light-emitting device disposed on the base substrate, wherein the display panel further comprises:

[0039] A light-transmitting microcavity adjustment layer is provided on the light-emitting side of the WOLED light-emitting device; wherein the microcavity adjustment layer comprises at least one silicon nitride sublayer and at least one silicon oxide sublayer stacked.

[0040] In this embodiment, a microcavity adjustment layer disposed on the light-emitting side of the WOLED light-emitting device is formed into a microcavity adjustment structure by stacking at least one silicon nitride sublayer and at least one silicon oxide sublayer. This allows the red, blue, and green light emitted by the WOLED light-emitting device to undergo different degrees of optical path adjustment through the microcavity adjustment layer, thereby improving the luminous intensity of the different colors of light.

[0041] In one embodiment, optionally, in the microcavity adjustment layer, the silicon nitride sublayer and the silicon oxide sublayer are respectively arranged in an interval.

[0042] In this embodiment, the silicon nitride sublayer and the silicon oxide sublayer are spaced apart, and materials with different refractive indices are spaced apart to achieve multiple refractions of light emitted by the WOLED light-emitting device in the microcavity adjustment layer, thereby achieving an effective luminous intensity adjustment effect.

[0043] Figure 1 FIG1 is a schematic diagram of the cross-sectional structure of the display panel according to the first embodiment of the present invention. Figure 1 As shown, in the first embodiment, the display panel is formed as a top emission display structure, including:

[0044] Base substrate 100;

[0045] A WOLED light emitting device 200 is provided on a base substrate 100;

[0046] The microcavity adjustment layer 300 is disposed on the light-emitting side of the WOLED light-emitting device 200 .

[0047] The microcavity adjustment layer 300 includes at least one silicon nitride sublayer and at least one silicon oxide sublayer stacked together. Optionally, the silicon nitride sublayer and the silicon oxide sublayer are spaced apart from each other.

[0048] like Figure 1 As shown, in the first embodiment, a thin film transistor 400 is further provided between the base substrate 100 and the WOLED light emitting device 200 .

[0049] Optionally, the base substrate 100 includes but is not limited to a rigid substrate, a flexible substrate or other suitable substrates, wherein the flexible substrate may be, for example, a glass substrate, a polyimide substrate, etc., without limitation.

[0050] In one embodiment, the thin film transistor 400 optionally includes an active layer 410, a gate insulating layer 420, a gate 430, an interlayer insulating layer 440, a source and drain electrode 450, and a planar layer 460 sequentially disposed on the base substrate 100. The WOLED light emitting device 200 is disposed on the planar layer 460.

[0051] The WOLED light-emitting device 200 includes an anode 210, a WOLED organic electroluminescent layer 220, and a cathode 230, which are sequentially disposed on the planar layer 460. Specifically, the anode 210 is distributed in an array within a pixel-defining layer 240 disposed on the planar layer 460, defining a plurality of different pixel regions. Optionally, the plurality of pixel regions include RGBW pixel regions.

[0052] In one embodiment, the WOLED organic electroluminescent layer 220 is formed into a 2-layer, 3-layer or other multi-layer structure, such as any combination of blue light + yellow light, blue light + red light + yellow light, blue light + red light + yellow light + green light, or blue light + red light green light + green light. For example, taking the WOLED organic electroluminescent layer 220 as a blue light + red light green light + green layer structure, as an example, Figure 2As shown, the WOLED organic electroluminescent layer 220 includes a hole injection layer, a first hole transport layer, a first blue light-emitting layer, a first electron transport layer, a first electron generating layer, a second hole transport layer, a green light-emitting layer, a red light-emitting layer, a second electron transport layer, a second electron generating layer, a third hole transport layer, a second blue light-emitting layer, a third electron transport layer and an electron injection layer, which are sequentially arranged between the anode 210 and the cathode 230.

[0053] It should be noted that the structure of the WOLED organic electroluminescent layer 220 is merely an example and is not limited thereto.

[0054] Optionally, in Embodiment 1, anode 210 may have a structure of ITO / Ag / ITO, ITO / Al / ITO, and Mo / AlNd / ITO, and may have light reflective properties. Alternatively, anode 210 may be prepared by sputtering. For example, in the case of anode 210 having an ITO / Ag / ITO structure, the thicknesses of the layers are 80 Å, 1000 Å, and 120 Å, respectively.

[0055] The cathode 230 may be made of MgAg material and has a semi-transmissive and semi-reflective property. The light emitted by the WOLED organic electroluminescent layer 220 can be transmitted through the cathode 230 .

[0056] In the embodiment of the present invention, in implementation mode 1, a color filter CF (not shown) is further provided on the side of the cathode 230 away from the base substrate 100, including multiple sub-pixel portions, each sub-pixel portion corresponding to an anode 210. When the light emitted by the WOLED organic electroluminescent layer 220 passes through the CF, light corresponding to the color of the sub-pixel portion of the color filter CF is output.

[0057] In order to solve the problem that when the light emitted by the WOLED organic electroluminescent layer 220 is transmitted to the CF, the light of two colors in the corresponding red, green or blue sub-pixels is absorbed and filtered out, resulting in low energy utilization and large power loss, in the embodiment of the present invention, Figure 1 As shown, a microcavity adjustment layer 300 is disposed on a side of the cathode 230 away from the base substrate 100 .

[0058] Optionally, the microcavity adjustment layer 300 includes a first silicon oxide sublayer, a first silicon nitride sublayer, a second silicon oxide sublayer, and a second silicon nitride sublayer, which are stacked and sequentially disposed on the IZO material sublayer;

[0059] The thickness of the first silicon oxide sublayer is between 200 angstroms and 600 angstroms, the thickness of the first silicon nitride sublayer is between 100 angstroms and 300 angstroms, the thickness of the second silicon oxide sublayer is between 500 angstroms and 1000 angstroms, and the thickness of the second silicon nitride sublayer is between 500 angstroms and 1000 angstroms. For example, the microcavity adjustment layer 300 is formed in a structure of SiOx+SiNx+SiOx+SiNx.

[0060] In this embodiment, a microcavity adjustment layer 300 is disposed on the side of the cathode 230 away from the WOLED organic electroluminescent layer 220. Light emitted by the WOLED organic electroluminescent layer 220 is transmitted through the microcavity adjustment layer 300 to the CF before exiting. A microcavity adjustment structure is formed using stacked silicon nitride and silicon oxide sublayers. The emitted light is reflected multiple times between the microcavity adjustment layer 300 and the anode 210 before being transmitted outward. This allows the red, blue, and green light emitted by the WOLED light-emitting device to be adjusted to varying degrees through the microcavity adjustment layer, thereby enhancing the luminous intensity of the different colors.

[0061] In addition, by adopting the above-mentioned size ranges for the thicknesses of the first silicon oxide sublayer, the first silicon nitride sublayer, the second silicon nitride sublayer, and the second silicon nitride sublayer, respectively, the transmission optical path of the microcavity adjustment layer 300 formed by the combination of the first silicon oxide sublayer, the first silicon nitride sublayer, the second silicon nitride sublayer, and the second silicon nitride sublayer has a corresponding integer multiple relationship with the wavelengths of red light, blue light, and green light, respectively, to ensure that the luminous intensity of each color of light can be improved, that is, the intensity of different colors of light is improved to varying degrees, such as Figure 3 shown.

[0062] In an embodiment of the present invention, the microcavity adjustment layer 300 may optionally cover each sub-pixel unit of the display panel (each sub-pixel unit corresponds to a WOLED light-emitting device 200), that is, the structure of the microcavity adjustment layer 300 corresponding to each WOLED light-emitting device 200 is the same. In another embodiment, the microcavity adjustment layer 300 corresponding to sub-pixels of different colors may optionally be different, that is, the structure and thickness of the microcavity adjustment layer 300 may be determined based on the color of light required to be output by the corresponding sub-pixel unit.

[0063] The display panel described in the embodiment of the present invention solves the efficiency loss caused by SPP of the cathode 230 made of MgAg material. Compared with the usual thickness of the cathode 230 of 12nm, in one embodiment of the present invention, the thickness of the cathode 230 is reduced, such as setting the thickness of the cathode 230 to between 5nm and 10nm, thereby reducing the efficiency loss caused by SPP of the cathode 230. On this basis, an indium zinc oxide IZO material sublayer is provided on the microcavity adjustment point 300, and the IZO material sublayer is connected to the cathode. From the cathode 230 to the CF direction, the microcavity adjustment layer 300 is formed as follows: Figure 4 In the structure shown, the function of the cathode 230 is ensured by the microcavity adjustment layer 300, and the luminous intensity of different colors of light is improved.

[0064] By using the display panel described in the first embodiment, the efficiency loss caused by the SPP of the cathode 230 is reduced by reducing the thickness of the cathode 230. At the same time, in order to further improve the efficiency, the microcavity adjustment layer 300 of the above-mentioned embodiment structure is provided on the cathode 230, which can improve the luminous intensity of different colors to varying degrees.

[0065] Figure 5 FIG2 is a schematic cross-sectional view of the display panel according to the second embodiment of the present invention. Figure 5 As shown, in the second embodiment, the display panel is formed into a bottom emission display structure, including:

[0066] Base substrate 100;

[0067] A WOLED light emitting device 200 is provided on a base substrate 100;

[0068] The microcavity adjustment layer 300 is disposed on the light-emitting side of the WOLED light-emitting device 200 .

[0069] The microcavity adjustment layer 300 includes at least one silicon nitride sublayer and at least one silicon oxide sublayer stacked together. Optionally, the silicon nitride sublayer and the silicon oxide sublayer are spaced apart from each other.

[0070] In the second embodiment, similar to the first embodiment, a thin film transistor 400 is further provided between the base substrate 100 and the WOLED light emitting device 200 .

[0071] Optionally, the base substrate 100 may be a rigid substrate or a flexible substrate, but is made of a transparent material, so that the light emitted by the WOLED light-emitting device 200 can be emitted through the base substrate 100 .

[0072] In the second embodiment, the thin film transistor 400 includes an active layer 410, a gate insulating layer 420, a gate 430, an interlayer insulating layer 440, a source and drain electrode 450, and a planar layer 460, which are sequentially disposed on the base substrate 100. The WOLED light emitting device 200 is disposed on the planar layer 460.

[0073] In addition, in order to increase the display aperture ratio, in this embodiment, Figure 5 As shown, a first transparent capacitor plate 510, a first insulating layer 520, and a second transparent capacitor plate 530 are sequentially stacked on the base substrate 100 between the base substrate 100 and the active layer 410. Optionally, the second transparent capacitor plate 520 and the active layer 410 are provided on the same layer. Optionally, the first transparent capacitor plate 510 and the second transparent capacitor plate 530 are each made of ITO material.

[0074] In this embodiment, the first insulating layer 520 , the gate insulating layer 420 , the interlayer insulating layer 440 and the planarizing layer 460 are all made of transparent materials.

[0075] The WOLED light-emitting device 200 includes an anode 210, a WOLED organic electroluminescent layer 220, and a cathode 230, which are sequentially disposed on the planar layer 460. Specifically, the anode 210 is distributed in an array within a pixel-defining layer 240 disposed on the planar layer 460, defining a plurality of different pixel regions. Optionally, the plurality of pixel regions include RGBW pixel regions.

[0076] Optionally, in the second embodiment, the anode 210 is made of a light-transmitting material, and the cathode 230 is made of a reflective material, or a reflective layer (not shown) is further provided on the side of the cathode 230 away from the anode 210. The light emitted by the WOLED organic electroluminescent layer 220 can be reflected by the cathode 230 and then sequentially pass through the anode 210, the planar layer 460, the interlayer insulating layer 440, the gate insulating layer 420, the second transparent capacitor plate 530, the first insulating layer 520, the first transparent capacitor plate 510, and the base substrate 100 before being output.

[0077] In the embodiment of the present invention, Figure 5 As shown, the anode 210 is electrically connected to the first transparent capacitor plate 510 through a via hole that sequentially penetrates the flat layer 460, the interlayer insulating layer 440, the gate insulating layer 420 and the first insulating layer 520, one of the source and drain electrodes 450 of the thin film transistor 400 is electrically connected to the second transparent capacitor plate 530 through a via hole that penetrates the gate insulating layer 420, and the other source and drain electrode 450 of the thin film transistor 400 is electrically connected to the first transparent capacitor plate 510 through a via hole that sequentially penetrates the gate insulating layer 420 and the first insulating layer 520.

[0078] In this embodiment, a transparent capacitor structure is formed between the first transparent capacitor plate 510 and the second transparent capacitor plate 530. Since the first transparent capacitor plate 510 and the second transparent capacitor plate 530 are electrically connected to the thin-film transistor 400 and the anode 210, respectively, the data control signal on the thin-film transistor 400 can be transmitted to the anode 210, thereby inputting a voltage control signal to the anode 220. Furthermore, since the first transparent capacitor plate 510 and the second transparent capacitor are disposed on one side of the thin-film transistor 400, the resulting transparent capacitor structure can improve the display aperture ratio.

[0079] Optionally, a color filter CF (not shown) can be disposed on the base substrate 100 between the base substrate 100 and the anode 220. In the present embodiment, the location of the color filter CF is not limited. The color filter CF includes multiple sub-pixels, each corresponding to an anode 210. When light emitted by the WOLED organic electroluminescent layer 220 passes through the CF, it outputs light corresponding to the color of the sub-pixel portion of the color filter CF.

[0080] In order to solve the problem that when the light emitted by the WOLED organic electroluminescent layer 220 is transmitted to the CF, the light of two colors in the corresponding red, green or blue sub-pixels is absorbed and filtered out, resulting in low energy utilization and large power loss, in the embodiment of the present invention, Figure 5 As shown, in one embodiment, a microcavity adjustment layer 300 is provided on a side of the first transparent capacitor plate 510 away from the WOLED light emitting device 200 .

[0081] Among them, Figure 6 As shown, the microcavity adjustment layer 300 includes a first silicon nitride sublayer, a first silicon oxide sublayer, and a second silicon nitride sublayer stacked and sequentially arranged on the first transparent capacitor plate 510, such as forming a SiNx+SiOx+SiNx structure.

[0082] The thickness of the first silicon nitride sublayer is between 500 angstroms and 1500 angstroms, the thickness of the first silicon oxide sublayer is between 200 angstroms and 800 angstroms, and the thickness of the second silicon nitride sublayer is between 200 angstroms and 800 angstroms.

[0083] In another embodiment, optionally, the microcavity adjustment layer 300 is not limited to being located on the first transparent capacitor plate 510 , but may also be located on the second transparent capacitor plate 530 , such as on a side of the second transparent capacitor plate 530 close to the base substrate 100 .

[0084] In this embodiment, a microcavity adjustment layer 300 is provided on the light-emitting side of the WOLED organic electroluminescent layer 220, so that light emitted by the WOLED organic electroluminescent layer 220 is transmitted through the microcavity adjustment layer 300. A microcavity adjustment structure is formed by stacking silicon nitride and silicon oxide sublayers. The emitted light is reflected multiple times between the microcavity adjustment layer 300 and the reflective layer before being transmitted outward. This allows the red, blue, and green light emitted by the WOLED light-emitting device to be adjusted to varying degrees through the microcavity adjustment layer, thereby improving the luminous intensity of the different colors of light.

[0085] In addition, the microcavity adjustment layer 300 can also make the peak separation of red light and green light obvious and increase the color gamut. Figure 7 As shown, taking red light as an example, the spectrum of red light when the microcavity adjustment layer is set is compared with the spectrum of red light when the microcavity adjustment layer is not set. The light intensity of red light is increased and the peak separation is obvious.

[0086] Similar to the first embodiment, in the second embodiment, the microcavity adjustment layer 300 can cover each sub-pixel unit of the display panel (each sub-pixel unit corresponds to a WOLED light-emitting device 200), that is, the structure of the microcavity adjustment layer 300 corresponding to each WOLED light-emitting device 200 is the same. In another embodiment, the microcavity adjustment layer 300 corresponding to sub-pixels of different colors can optionally be different, that is, the structure and thickness of the microcavity adjustment layer 300 can be determined based on the color of light output required by the corresponding sub-pixel unit.

[0087] Another aspect of an embodiment of the present invention provides a display device, comprising the display panel as described in any one of the above items.

[0088] Combine Figures 1 to 7 , and referring to the above structural description of the display panel, those skilled in the art should be able to understand the specific implementation structure of the display device using the display panel described in the embodiment of the present invention, which will not be described in detail here.

[0089] Another aspect of the present invention provides a preparation method, which is applied to the display panel as described above. Figure 8 As shown, the preparation method includes:

[0090] S810, providing the substrate;

[0091] S820, manufacturing the WOLED light-emitting device on the base substrate;

[0092] Wherein, when the light emitting direction of the WOLED light emitting device is a direction away from the base substrate, the method further includes:

[0093] The microcavity adjustment layer is manufactured on the base substrate on which the WOLED light-emitting device is manufactured.

[0094] When the light emitting direction of the WOLED light emitting device is toward the base substrate, before manufacturing the WOLED light emitting device on the base substrate, the method further includes:

[0095] The microcavity adjustment layer is manufactured on the base substrate.

[0096] By using the preparation method described in an embodiment of the present invention, a microcavity adjustment layer is formed on the light-emitting side of a WOLED light-emitting device. At least one silicon nitride sublayer and at least one silicon oxide sublayer are stacked to form a microcavity adjustment structure. The red, blue, and green light emitted by the WOLED light-emitting device undergoes optical path length adjustment to varying degrees through the microcavity adjustment layer, thereby enhancing the luminous intensity of the different colors of light.

[0097] In the embodiment of the present invention, the microcavity adjustment layer can refer to the above Figure 1 and Figure 5 , I will not explain it in detail here.

[0098] The above is a preferred embodiment of the present invention. It should be pointed out that for ordinary personnel in this technical field, several improvements and modifications can be made without departing from the principles of the present invention. These improvements and modifications should also be regarded as the scope of protection of the present invention.

Claims

1. A display panel comprising a transparent base substrate and a WOLED light-emitting device disposed on the base substrate, characterized in that: The display panel further includes: A light-transmitting microcavity adjustment layer is disposed on the light-emitting side of the WOLED light-emitting device; wherein the microcavity adjustment layer comprises at least one silicon nitride sublayer and at least one silicon oxide sublayer stacked together; and a transmission optical path formed by the microcavity adjustment layer is an integer multiple of a wavelength of light of a color to be transmitted by the WOLED light-emitting device. The display panel further includes a transparent capacitor plate located between the base substrate and the WOLED light-emitting device; the transparent capacitor plate is electrically connected to the WOLED light-emitting device, and the light emitting direction of the WOLED light-emitting device is toward the base substrate; The transparent capacitor plate includes a first transparent capacitor plate and a second transparent capacitor plate sequentially stacked on the base substrate, and the microcavity adjustment layer is provided on the second transparent capacitor plate and is located on a side of the second transparent capacitor plate close to the base substrate; The microcavity adjustment layer includes a first silicon nitride sublayer, a first silicon oxide sublayer, and a second silicon nitride sublayer which are stacked and sequentially arranged on the transparent capacitor plate; The thickness of the first silicon nitride sublayer is between 500 angstroms and 1500 angstroms, the thickness of the first silicon oxide sublayer is between 200 angstroms and 800 angstroms, and the thickness of the second silicon nitride sublayer is between 200 angstroms and 800 angstroms.

2. The display panel according to claim 1, wherein: In the microcavity adjustment layer, the silicon nitride sublayer and the silicon oxide sublayer are respectively arranged in intervals.

3. The display panel according to claim 1, wherein: The WOLED light emitting device includes an anode, a WOLED organic electroluminescent layer and a cathode which are sequentially arranged above the base substrate.

4. The display panel according to claim 3, wherein: The thickness of the cathode is between 5 nm and 10 nm.

5. A display device, characterized in that: The display panel comprises the display panel according to any one of claims 1 to 4.

6. A preparation method, characterized in that: Applied to the display panel according to any one of claims 1 to 4, the manufacturing method comprises: Providing the substrate; fabricating the microcavity adjustment layer on the base substrate; The WOLED light-emitting device is manufactured on the base substrate for manufacturing the microcavity adjustment layer.

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