Electronic package and method of making the same

Abstract

The present application relates to an electronic package and its manufacturing method, which comprises providing a supporting structure with electronic components and a package layer covering the electronic components, forming a heat conducting structure on the package layer, and allowing the heat conducting structure and the package layer not to cover the electronic components, then placing the supporting structure on a substrate through a plurality of solder bumps, and irradiating the electronic components, the supporting structure and the heat conducting structure with a laser beam to transfer the heat energy of the laser beam to the plurality of solder bumps through the heat conducting structure, so as to effectively make the solder bumps fixed to the supporting structure to avoid the problem of non-wetting solder.

Description

Technical Field

[0001] This invention relates to a semiconductor packaging process, and more particularly to a bonding apparatus for flip-chip operations and their applications. Background Technology

[0002] With the booming development of portable electronic products in recent years, various related products are gradually moving towards high density, high performance, and lightness, thinness, shortness, and smallness. As a result, various semiconductor packaging structures used in these portable electronic products are also being innovated to meet the requirements of lightness, thinness, smallness, high density, and high performance.

[0003] As modern electronic products tend to be designed to be thinner, smaller, and more functionally diverse, semiconductor packaging technology has developed various packaging types. To meet the demands for high integration, miniaturization, and high circuit performance in semiconductor devices, flip-chip bonding packaging technology has been developed.

[0004] like Figure 1A As shown, in the existing method for manufacturing a flip-chip semiconductor package 1, a semiconductor chip 11 is first bonded to a circuit structure 10 via multiple conductive bumps 13. Then, an adhesive base 12 is formed between the semiconductor chip 11 and the circuit structure 10 to cover the conductive bumps 13. An encapsulation layer 14 is then formed on the circuit structure 10 to cover the semiconductor chip 11. Subsequently, multiple copper pillars 100 are formed on the underside of the circuit structure 10 to attach the copper pillars 100 to the solder bumps 150 of the substrate 15.

[0005] Currently, methods for bonding the copper pillar 100 to the solder bump 150 can include reflow soldering and laser bonding. In the reflow soldering method, solder bumps 150 with flux are disposed on the substrate 15, and the solder bumps 150 are reflowed at high temperature to bond the semiconductor chip 11 to the substrate 15 via the circuit structure 10 (multiple copper pillars 100). In the laser bonding method, solder bumps 150 with flux are disposed on the substrate 15, and a laser beam L (such as...) is used... Figure 1A The semiconductor chip 11 is irradiated (as shown) to transfer energy to the solder bump 150, causing the solder bump 150 to melt immediately and then harden, so that the semiconductor chip 11 is bonded to the substrate 15 via the circuit structure 10 (a plurality of copper pillars 100).

[0006] However, in existing semiconductor packages 1, the thickness of the flip-chip semiconductor chip 11 has recently been reduced to hundreds of micrometers or less. When the temperature of the semiconductor chip 11 and the substrate 15 rises immediately due to the irradiation of the laser beam L, the heat energy of the laser beam L cannot penetrate the package layer 14. This results in insufficient heat energy from the laser beam L to be transferred to the solder bumps 150 below the package layer 14, which easily leads to the defect of solder non-wetting, such as... Figure 1B The peripheral area B shown is experiencing solder shrinkage or empty solder joints.

[0007] Therefore, overcoming the various problems of the existing technologies has become an urgent issue to be addressed. Summary of the Invention

[0008] In view of the various defects of the prior art, the present invention provides an electronic package and its manufacturing method, which can effectively fix the solder bump to the bearing structure to avoid the problem of unwetted solder.

[0009] The electronic package of the present invention includes: a carrier structure; an electronic component disposed on the carrier structure; an encapsulation layer disposed on the carrier structure and covering the electronic component; a thermally conductive structure formed on the encapsulation layer, such that the encapsulation layer and the thermally conductive structure do not cover the electronic component; and a substrate that is connected to the carrier structure via a plurality of solder bumps.

[0010] The present invention also provides a method for manufacturing an electronic package, comprising: providing a carrier structure having an electronic component thereon and an encapsulation layer surrounding the electronic component; forming a thermally conductive structure on the encapsulation layer such that the encapsulation layer and the thermally conductive structure do not cover the electronic component; and attaching the carrier structure to a substrate via a plurality of solder bumps, and irradiating the electronic component, the carrier structure and the conductive structure with a laser beam, so as to transfer the heat energy of the laser beam to the plurality of solder bumps via the thermally conductive structure.

[0011] In the aforementioned electronic package and its manufacturing method, the thermally conductive structure is in the form of a single-layer metal layer. For example, the metal layer is a silver layer.

[0012] In the aforementioned electronic package and its manufacturing method, the thermally conductive structure comprises a first thermally conductive layer, a second thermally conductive layer, and a third thermally conductive layer stacked sequentially. For example, the first thermally conductive layer is a titanium layer, the second thermally conductive layer is a combination of nickel / vanadium materials, and the third thermally conductive layer is a silver layer. Furthermore, the content ratio of the thermally conductive structure is 1-10% for the first thermally conductive layer, 25-35% for the second thermally conductive layer, and 60-70% for the third thermally conductive layer.

[0013] In the aforementioned electronic package and its manufacturing method, the thermally conductive structure comprises one or more materials selected from the group consisting of gold, palladium, titanium, silver, copper, nickel, vanadium and stainless steel.

[0014] In the aforementioned electronic package and its manufacturing method, the thermally conductive structure covers the packaging layer and extends to the side of the supporting structure.

[0015] In the aforementioned electronic package and its manufacturing method, the thermally conductive structure is formed above the package layer.

[0016] In the aforementioned electronic package and its manufacturing method, the thermally conductive structure is formed on the side of the package layer and the side of the support structure.

[0017] As can be seen from the above, in the electronic package and its manufacturing method of the present invention, the heat-conducting structure is mainly formed on the package layer so that when the laser beam irradiates, the heat energy of the laser beam can be transferred along the heat-conducting structure to the corresponding area below the package layer, so that the solder bump there has sufficient heat energy, thus effectively fixing the solder bump to the support structure. Therefore, compared with the prior art, the present invention can effectively avoid the problem of unwetted solder. Attached Figure Description

[0018] Figure 1A This is a cross-sectional schematic diagram of an existing flip-chip semiconductor package.

[0019] Figure 1B for Figure 1A A magnified view of a portion of the image.

[0020] Figures 2A to 2E This is a cross-sectional schematic diagram of a first embodiment of the manufacturing method of the electronic package of the present invention.

[0021] Figure 2E-1 and Figure 2E-2 for Figure 2E Cross-sectional schematic diagrams of other embodiments.

[0022] Figures 3A to 3G This is a cross-sectional schematic diagram of a second embodiment of the manufacturing method of the electronic package of the present invention.

[0023] Explanation of reference numerals in the attached figures

[0024] 1 Semiconductor package

[0025] 10. Circuit Structure

[0026] 100 bronze pillars

[0027] 11 Semiconductor chips

[0028] 12.22 base rubber

[0029] 13,23 Conductive bumps

[0030] 14,24 encapsulation layers

[0031] 15,25 base plate

[0032] 150, 250 solder bumps

[0033] 2 Electronic Packages

[0034] 2a, 3a Thermal conductive structure

[0035] 20 Load-bearing structure

[0036] 20c, 24c side view

[0037] 200 conductive elements

[0038] 21 Electronic Components

[0039] 21a Working surface

[0040] 21b Non-operating surface

[0041] 24a First Surface

[0042] 24b Second Surface

[0043] 26 barrier layers

[0044] 37 First thermal conductive layer

[0045] 38 Second thermal conductive layer

[0046] 39 Third thermal conductive layer

[0047] B. Outer Zone

[0048] L laser beam. Detailed Implementation

[0049] The following describes the implementation of the present invention through specific embodiments. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification.

[0050] It should be understood that the structures, proportions, sizes, etc., illustrated in the accompanying drawings are merely for illustrative purposes to aid those skilled in the art in understanding and reading the content disclosed herein, and are not intended to limit the conditions under which the invention can be implemented. Therefore, they have no substantial technical significance. Any modifications to the structure, changes in proportions, or adjustments to the size, without affecting the effects and objectives achieved by the invention, should still fall within the scope of the technical content disclosed herein. Furthermore, the terms such as "above," "first," "second," "third," and "a" used in this specification are merely for clarity of description and are not intended to limit the scope of the invention. Changes or adjustments to their relative relationships, without substantially altering the technical content, should also be considered within the scope of the invention's implementation.

[0051] Figures 2A to 2EThis is a cross-sectional schematic diagram of a first embodiment of the manufacturing method of the electronic package 2 of the present invention.

[0052] like Figure 2A As shown, a chip package is provided, which includes a carrier structure 20 and at least one electronic component 21.

[0053] The carrier structure 20 may be, for example, a packaging substrate with a core layer and circuit structure, a packaging substrate with a coreless circuit structure, a silicon interposer (TSI) with through-silicon vias (TSVs), or other board types, comprising at least one insulating layer and at least one circuit layer bonded to the insulating layer, such as at least one fan-out redistribution layer (RDL). It should be understood that the carrier structure 20 may also be other board materials for carrying chips, such as leadframes, wafers, or other boards with metal routing, and is not limited to the above.

[0054] In this embodiment, the carrier board of the supporting structure 20 can be fabricated in various ways. For example, the circuit layer can be fabricated using a wafer fabrication process, and silicon nitride or silicon oxide can be formed as an insulating layer by chemical vapor deposition (CVD). Alternatively, the circuit layer can be formed using a general non-wafer fabrication process, that is, using a low-cost polymer dielectric material as an insulating layer, such as polyimide (PI), polybenzoxazole (PBO), prepreg (PP), molding compound, photosensitive dielectric layer or other materials, etc., formed by coating.

[0055] Furthermore, the supporting structure 20 has a plurality of conductive elements 200 formed on its lower side for use as contacts. Specifically, the conductive elements 200 may be metal pillars such as copper pillars, metal bumps covered with insulating blocks, solder balls, solder balls with a copper core ball, or other conductive structures.

[0056] The electronic component 21 is disposed on the upper side of the support structure 20 and is an active component, a passive component, or a combination thereof. The active component is, for example, a semiconductor chip, and the passive component is, for example, a resistor, a capacitor, and an inductor.

[0057] In this embodiment, the electronic component 21 is a semiconductor chip with opposing active surfaces 21a and non-active surfaces 21b. The electrode pads of the active surface 21a are disposed on the carrier structure 20 via multiple conductive bumps 23, such as solder material, metal pillars, or other materials, in a flip-chip manner and electrically connected to the circuit layer of the carrier structure 20. Then, an adhesive base 22 is formed between the electronic component 21 and the carrier structure 20 to cover the conductive bumps 23. Alternatively, the electronic component 21 can be electrically connected to the circuit layer of the carrier structure 20 via multiple bonding wires (not shown) in a wire bonding manner. Or, the electronic component 21 can directly contact the circuit layer of the carrier structure 20. Therefore, a desired type and number of electronic components can be placed on the carrier structure 20 to improve its electrical function, and there are many ways to electrically connect the electronic component 21 to the carrier structure 20, not limited to the above.

[0058] like Figure 2B As shown, an encapsulation layer 24 is formed on the carrier structure 20 so that the encapsulation layer 24 covers the electronic components 21 and the base adhesive 22.

[0059] In this embodiment, the material forming the encapsulation layer 24 is an insulating material, such as an encapsulating colloid of polyimide (PI) or epoxy resin, which can be formed by molding, lamination or coating.

[0060] Furthermore, the encapsulation layer 24 has opposing first surfaces 24a and second surfaces 24b, with the carrier structure 20 bonded to the first surface 24a. The non-functional surface 21b of the electronic component 21 is flush with the second surface 24b of the encapsulation layer 24, so that the non-functional surface 21b of the electronic component 21 is exposed to the second surface 24b of the encapsulation layer 24. Alternatively, the encapsulation layer may cover the non-functional surface 21b of the electronic component 21, making the second surface of the encapsulation layer higher than the non-functional surface 21b of the electronic component 21. It should be understood that a leveling process, such as grinding, cutting, or etching, can be used to obtain the desired result. Figure 2B An embodiment of the encapsulation layer 24 is shown.

[0061] like Figure 2C As shown, a resistive layer 26 is formed on the non-functional surface 21b of the electronic component 21, and then the second surface 24b of the encapsulation layer 24 is removed, so that the non-functional surface 21b of the electronic component 21 is higher than the second surface 24b of the encapsulation layer 24. Next, a thermally conductive structure 2a is formed on the second surface 24b and side surface 24c of the encapsulation layer 24 and extends to the side surface 20c of the support structure 20.

[0062] In this embodiment, the thermally conductive structure 2a is a single-layer metal layer, which is one of the following materials: gold, palladium, titanium, silver, copper, nickel, vanadium and stainless steel, such as silver. The metal layer located on the second surface 24b of the encapsulation layer 24 is flush with the non-functional surface 21b of the electronic component 21.

[0063] like Figure 2D As shown, the resist layer 26 is removed, and a plurality of conductive elements 200 of the carrier structure 20 are attached to the solder bumps 250 of a substrate 25.

[0064] In this embodiment, the substrate 25 may be, for example, a packaging substrate with a core layer and a circuit structure, or a packaging substrate with a coreless circuit structure, which includes at least one insulating layer and at least one circuit layer bonded to the insulating layer, such as at least one fan-out redistribution layer (RDL).

[0065] like Figure 2E As shown, using a laser bonding method, a laser beam L is irradiated onto the electronic component 21, the support structure 20, and the heat-conducting structure 2a, so that heat energy is transferred to the solder bump 250 through the heat-conducting structure 2a, the electronic component 21, and the support structure 20, so that the solder bump 250 melts immediately and then hardens to fix the conductive component 200, and the electronic component 21 is bonded to the substrate 25 through the support structure 20.

[0066] Therefore, through the configuration of the heat-conducting structure 2a, when the temperature of the electronic component 21 and the substrate 25 rises immediately due to the irradiation of the laser beam L, although the heat energy of the laser beam L cannot penetrate the encapsulation layer 24, it can be transferred along the heat-conducting structure 2a to the area below the encapsulation layer 24, so that the solder bump 250 there has sufficient heat energy, thus effectively fixing the solder bump 250 to the conductive component 200. Therefore, compared with the prior art, the manufacturing method of the present invention does not cause the problem of solder non-wetting.

[0067] Furthermore, the thermally conductive structure 2a can be formed only above the encapsulation layer 24 (such as on the second surface 24b), as required. Figure 2E-1 As shown; or, the thermally conductive structure 2a may be formed only on the side 24c of the encapsulation layer 24 and extend to the side 20c of the support structure 20, as shown. Figure 2E-2 As shown, the second surface 24b of the encapsulation layer 24 is flush with the non-functional surface 21b of the electronic component 21. It should be understood that, as Figure 2E-1 and Figure 2E-2The configuration of the heat-conducting structure 2a shown can still transfer heat energy to the area below the corresponding part of the encapsulation layer 24 through the heat-conducting structure 2a, so as to provide heat energy to the solder bump 250.

[0068] Figures 3A to 3G This is a cross-sectional schematic diagram of a second embodiment of the manufacturing method of the electronic package 3 of the present invention. The difference between this embodiment and the first embodiment lies in the configuration of the thermal conductive layer; other processes are largely the same, so the differences will not be described again below.

[0069] like Figure 3A As shown, a chip package is provided, which includes a carrier structure 20 and at least one electronic component 21.

[0070] like Figure 3B As shown, an encapsulation layer 24 is formed on the carrier structure 20 so that the encapsulation layer 24 covers the electronic component 21 and the base adhesive 22.

[0071] like Figure 3C As shown, a resistive layer 26 is formed on the non-functional surface 21b of the electronic component 21, and then a portion of the material on the second surface 24b of the encapsulation layer 24 is removed, so that the non-functional surface 21b of the electronic component 21 is higher than the second surface 24b of the encapsulation layer 24. Next, a first thermally conductive layer 37 is formed on the second surface 24b and side surface 24c of the encapsulation layer 24 and extends to the side surface 20c of the support structure 20.

[0072] In this embodiment, the first thermally conductive layer 37 is a metal layer such as a titanium layer.

[0073] like Figure 3D As shown, a second thermally conductive layer 38 is formed on the first thermally conductive layer 37.

[0074] In this embodiment, the second thermally conductive layer 38 is a combination of materials such as nickel / vanadium.

[0075] like Figure 3E As shown, a third thermally conductive layer 39 is formed on the second thermally conductive layer 38.

[0076] In this embodiment, the third thermally conductive layer 39 is a metal layer such as a silver layer, and the metal layer located on the second surface 24b of the encapsulation layer 24 is flush with the non-functional surface 21b of the electronic component 21.

[0077] Furthermore, the first conductive layer 37, the second thermally conductive layer 38, and the third thermally conductive layer 39 constitute a thermally conductive structure 3a, with the first conductive layer 37 comprising 1-10% (e.g., 5%), the second thermally conductive layer 38 comprising 25-35% (e.g., 31%), and the third thermally conductive layer 39 comprising 60-70% (e.g., 64%). It should be understood that the thermally conductive structure 3a comprises various materials selected from the group consisting of gold, palladium, titanium, silver, copper, nickel, vanadium, and stainless steel, and is not limited to the above.

[0078] like Figure 3F As shown, the support structure 20 is connected to the solder bumps 250 of a substrate 25 via a plurality of conductive elements 200.

[0079] like Figure 3G As shown, the resist layer 26 is removed, and then a laser bonding method is used to irradiate the electronic component 21, the carrier structure 20 and the heat-conducting structure 3a with a laser beam L, so that the heat energy is transferred to the solder bump 250 through the heat-conducting structure 3a, the electronic component 21 and the carrier structure 20, so that the solder bump 250 melts immediately and then hardens to fix the conductive component 200, so that the electronic component 21 is bonded to the substrate 25 through the carrier structure 20.

[0080] Therefore, through the configuration of the first to third thermally conductive layers 37, 38, 39, when the temperature of the electronic component 21 and the substrate 25 rises immediately due to the irradiation of the laser beam L, although the heat energy of the laser beam L cannot penetrate the encapsulation layer 24, it can be transferred along the thermally conductive structure 3a to the area below the encapsulation layer 24, so that the solder bump 250 at that location has sufficient heat energy, thus effectively fixing the solder bump 250 to the conductive component 200. Therefore, compared with the prior art, the manufacturing method of the present invention does not cause the problem of solder non-wetting.

[0081] The present invention also provides an electronic package 2,3, comprising: a carrier structure 20, at least one electronic component 21 disposed on the carrier structure 20, an encapsulation layer 24 disposed on the carrier structure 20 and covering the electronic component 21, a thermally conductive structure 2a,3a formed on the encapsulation layer 24, and a substrate 25 connected to the carrier structure 20 via a plurality of solder bumps 250.

[0082] In one embodiment, the thermally conductive structure 2a is in the form of a single-layer metal layer. For example, the metal layer is a silver layer.

[0083] In one embodiment, the thermally conductive structure 3a comprises a first thermally conductive layer 37, a second thermally conductive layer 38, and a third thermally conductive layer 39 stacked sequentially. For example, the first thermally conductive layer 37 is a titanium layer, the second thermally conductive layer 38 is a combination of nickel / vanadium materials, and the third thermally conductive layer 39 is a silver layer. Further, the content ratio of the thermally conductive structure 3a is 1-10% for the first thermally conductive layer 37, 25-35% for the second thermally conductive layer 38, and 60-70% for the third thermally conductive layer 39.

[0084] In one embodiment, the thermally conductive structures 2a, 3a comprise one or more materials selected from the group consisting of gold, palladium, titanium, silver, copper, nickel, vanadium and stainless steel.

[0085] In one embodiment, the electronic component 21 is exposed on the encapsulation layer 24, and the thermally conductive structures 2a and 3a do not cover the electronic component 21.

[0086] In one embodiment, the thermally conductive structures 2a, 3a cover the encapsulation layer 24 and extend to the side 20c of the support structure 20.

[0087] In one embodiment, the thermally conductive structure 2a is formed only above the encapsulation layer 24, such as... Figure 2E-1 As shown.

[0088] In one embodiment, the thermally conductive structure 2a is formed only on the side 24c of the encapsulation layer 24 and the side 20c of the support structure 20, such as Figure 2E-2 As shown.

[0089] In summary, the electronic package and its manufacturing method of the present invention, through the configuration of the heat-conducting structure, allows the heat energy of the laser beam to be transferred along the heat-conducting structure to the area below the corresponding package layer when the laser beam irradiates the electronic component, so that the solder bump at that location has sufficient heat energy, thereby effectively fixing the solder bump to the conductive component. Therefore, the present invention can avoid the problem of unwetted solder.

[0090] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the invention. Any person skilled in the art can modify the above embodiments without departing from the spirit and scope of the invention. Therefore, the scope of protection of the present invention should be as set forth in the claims.

Claims

1. An electronic package, characterized in that, include: Load-bearing structure; Electronic components are mounted on the supporting structure; An encapsulation layer is disposed on the support structure and covers the electronic component; A thermally conductive structure is formed on the encapsulation layer and extends flush with the lower side of the support structure, ensuring that the encapsulation layer and the thermally conductive structure do not obscure the electronic component. The thermally conductive structure comprises a first thermally conductive layer, a second thermally conductive layer, and a third thermally conductive layer stacked sequentially, wherein the second thermally conductive layer is a combination of nickel and vanadium materials. A substrate is attached to the lower side of the support structure via a plurality of solder bumps, wherein a laser beam is used to irradiate the electronic component, the support structure and the heat-conducting structure, so that the heat energy of the laser beam is transferred to the plurality of solder bumps via the heat-conducting structure.

2. The electronic package as described in claim 1, characterized in that, The first thermally conductive layer is a titanium layer.

3. The electronic package as described in claim 1, characterized in that, The third thermally conductive layer is a silver layer.

4. The electronic package as described in claim 1, characterized in that, The thermally conductive structure covers the encapsulation layer.

5. A method for manufacturing an electronic package, characterized in that, include: A carrier structure is provided on which electronic components are disposed and an encapsulation layer covering the electronic components is provided. A thermally conductive structure is formed on the encapsulation layer, extending flush with the lower side of the carrier structure, ensuring that the encapsulation layer and the thermally conductive structure do not obscure the electronic component. The thermally conductive structure comprises a first thermally conductive layer, a second thermally conductive layer, and a third thermally conductive layer stacked sequentially, wherein the second thermally conductive layer is a combination of nickel and vanadium materials. The lower side of the support structure is attached to a substrate by a plurality of solder bumps, and the electronic component, the support structure and the heat-conducting structure are irradiated with a laser beam so that the heat energy of the laser beam is transferred to the plurality of solder bumps through the heat-conducting structure.

6. The method for manufacturing an electronic package as described in claim 5, characterized in that, The first thermally conductive layer is a titanium layer.

7. The method for manufacturing an electronic package as described in claim 5, characterized in that, The third thermally conductive layer is a silver layer.

8. The method for manufacturing an electronic package as described in claim 5, characterized in that, The thermally conductive structure covers the encapsulation layer.

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