A radio frequency power device

Abstract

This invention discloses an RF power device comprising multiple power units, each of which includes a temperature monitoring and compensation circuit. Each temperature monitoring and compensation circuit includes a temperature monitoring unit and a temperature compensation unit. The temperature monitoring unit monitors the temperature of each corresponding power unit, and the temperature compensation unit, connected to the temperature monitoring unit, generates a temperature compensation voltage to control the temperature of the monitoring unit. This invention applies different temperature compensations to different regions, thereby ensuring uniform thermal distribution and consistent performance of the RF power device under varying temperatures, thus improving its performance.

Description

Technical Field

[0001] This invention belongs to the field of radio frequency power device technology, and specifically relates to a radio frequency power device with a temperature compensation circuit. Background Technology

[0002] Radio frequency power devices are affected by temperature primarily because of the different turn-on voltages (V) of different device types. t / V be All RF power devices have different temperature coefficients (typically negative temperature coefficients). When the device is outputting power normally, it will cause the device to heat up, affecting the turn-on voltage and thus changing its performance. Therefore, RF power devices often need to be equipped with temperature compensation circuits to reduce the performance changes caused by heat generation when outputting power.

[0003] Typical temperature compensation circuits usually employ one or more devices with a certain temperature coefficient to achieve a voltage with a specific temperature coefficient through circuit structure, which is used to control the RF power device. When the RF power device heats up, this voltage value changes with temperature along with the turn-on voltage, thereby making the performance of the RF power device tend to be consistent at different temperatures.

[0004] like Figure 1 As shown, this is a typical temperature compensation circuit structure, where M1 is an RF power device, D1 is a negative temperature coefficient device, and D1, R1, and R2 constitute a temperature compensation circuit to generate a voltage that controls M1 with a certain temperature coefficient.

[0005] The drawback of this solution is that, for high-power devices, M1 is very large, and its heat distribution is not uniform, with inconsistent temperatures at different locations. D1 alone cannot track the temperature of M1, and a single compensation circuit cannot compensate for the temperature differences at multiple locations on M1. Therefore, large-area RF power devices still suffer from uneven heat generation.

[0006] Radio frequency power devices typically achieve higher power by increasing the number of interdigits (fingerprints), thus resulting in larger sizes, such as... Figure 2a and 2b These refer to low-power and high-power radio frequency power devices, respectively. Figure 2a In the diagram, 1 is the input pad of the RF power device, 2 is the output pad of the RF power device, and 3 is the power unit of the RF power device, which is composed of multiple interpolated fingers connected in parallel. Figure 2b It is a higher power radio frequency power device composed of more interdigitated fingers connected in parallel.

[0007] Because current tends to travel along the path of lower impedance, current does not flow uniformly through the various fingers of a device. This non-uniformity is not noticeable when the device size is small, but it becomes apparent and affects device performance as the size increases. Figure 2b Intercalation finger 'a' carries less current because it's located at the edge of the device, while intercalation finger 'c' carries more current because it's located in the middle. Intercalation finger 'b' is somewhere in between. The intercalation finger carrying more current generates more heat. Since most RF power devices have a negative temperature coefficient of turn-on voltage, increased temperature leads to a further increase in device current, creating a positive feedback loop that exacerbates the uneven heat distribution throughout the device and degrades its performance. Furthermore, because the thermal conductivity and temperature coefficient of the turn-on voltage themselves change with temperature, this uneven heat distribution becomes even more complex.

[0008] Therefore, traditional temperature compensation circuits can no longer meet the needs of large-size RF power devices. How to provide a circuit that can monitor and compensate for the temperature at different locations of RF power devices is an urgent problem to be solved. Summary of the Invention

[0009] The main objective of this invention is to provide an RF power device with a temperature compensation circuit that can monitor and compensate for the temperature at different locations of the RF power device, thereby overcoming the shortcomings of existing temperature compensation circuits that cannot meet the needs of large-size RF power devices.

[0010] To achieve the aforementioned objective, the technical solution adopted by the present invention includes: a radio frequency power device comprising multiple power units, each power unit being provided with a temperature monitoring and compensation circuit, each temperature monitoring and compensation circuit comprising a temperature monitoring unit and a temperature compensation unit, the temperature monitoring unit being used to monitor the temperature of each corresponding power unit, and the temperature compensation unit being connected to the temperature monitoring unit and used to generate a temperature compensation voltage to perform temperature compensation control on the temperature monitoring unit.

[0011] In a preferred embodiment, each of the power units is composed of a plurality of first interdigitated units connected in parallel.

[0012] In a preferred embodiment, the temperature monitoring unit is disposed between two adjacent power units.

[0013] In a preferred embodiment, the temperature monitoring unit is a second interdigitated unit.

[0014] In a preferred embodiment, the temperature compensation unit includes a third interpolation unit and a current amplification circuit. The third interpolation unit is connected to the second interpolation unit and is located away from the second interpolation unit. The current amplification circuit is connected to both the second and third interpolation units and is used to amplify the voltage difference output by the second and third interpolation units. Based on the voltage difference, the circuit generates the temperature compensation voltage for the second interpolation unit to compensate and control the temperature of the power unit where the second interpolation unit is located.

[0015] In a preferred embodiment, both the second interpolation unit and the third interpolation unit are MOS transistors. The gates of the second interpolation unit and the third interpolation unit are connected. The drains of the second interpolation unit and the third interpolation unit are respectively connected to a current source. The sources of the second interpolation unit and the third interpolation unit are both connected to the input terminal of the current amplification circuit. The output terminal of the current amplification circuit is connected to the gate of the second interpolation unit.

[0016] In a preferred embodiment, the current amplification circuit includes an operational amplifier, the non-inverting input terminal of the operational amplifier is connected to the source of the third interpolation unit to form a first node, the inverting input terminal of the operational amplifier is connected to the source of the second interpolation unit to form a second node, and the output terminal of the operational amplifier is connected to the gate of the second interpolation unit.

[0017] In a preferred embodiment, at least one first resistor is connected in series between the first node and the second node.

[0018] In a preferred embodiment, a second resistor is connected between the drain of the third interpolation unit and the current source, between the drain of the second interpolation unit and the current source, and between the output terminal of the operational amplifier and the gate of the second interpolation unit.

[0019] In a preferred embodiment, the radio frequency power device further includes an input pad and an output pad, and the power unit is disposed between the input pad and the output pad and is connected to both the input pad and the output pad.

[0020] Compared with the prior art, the beneficial effects of the present invention are at least as follows: by inserting multiple temperature monitoring and compensation circuits into large-size radio frequency power devices, the present invention performs different temperature compensations for different regions, thereby making the thermal distribution of the radio frequency power devices uniform and the performance more consistent under different temperatures, thus improving the performance of the radio frequency power devices. Attached Figure Description

[0021] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0022] Figure 1 This is a schematic diagram of an existing temperature compensation circuit;

[0023] Figures 2a-2b This is a schematic diagram of the structure of an existing radio frequency power device;

[0024] Figure 3a This is a schematic diagram of the structure of a radio frequency power device according to one embodiment of the present invention;

[0025] Figure 3b This is a schematic diagram of the structure of each power unit in one embodiment of the present invention;

[0026] Figure 4 This is a schematic diagram of the temperature monitoring and compensation circuit of the present invention. Detailed Implementation

[0027] The invention will be more fully understood through the following detailed description, which should be read in conjunction with the accompanying drawings. Detailed embodiments of the invention are disclosed herein; however, it should be understood that the disclosed embodiments are merely exemplary of the invention, which may be embodied in various forms. Therefore, the specific functional details disclosed herein should not be construed as limiting, but rather as the basis for the claims and as intended to teach those skilled in the art to employ the representative basis of the invention in different ways in any suitable detailed embodiment.

[0028] like Figure 3a As shown, the present invention discloses an RF power device including an input pad 10, multiple power units 20, multiple temperature monitoring and compensation circuits, and an output pad 40. The multiple power units 20 are disposed between the input pad 10 and the output pad 40, and are connected to both the input pad 10 and the output pad 40. Each power unit 20 is provided with a corresponding temperature monitoring and compensation circuit. The temperature monitoring and compensation circuit monitors the temperature of the corresponding power unit 20 and performs temperature compensation control on that power unit 20, thereby achieving different temperature compensations for different areas. This results in a more uniform heat distribution and more consistent performance of the RF power device under different temperatures, improving the performance of the RF power device.

[0029] Each power unit 20 is composed of multiple first interpolation units 5 connected in parallel. In this embodiment, the first interpolation unit 5 is implemented using a MOS transistor, but it can also be implemented using similar devices with thermal effects such as HBT and HEMT.

[0030] Combination Figure 3a and Figure 3b As shown, each temperature monitoring and compensation circuit includes a temperature monitoring unit 4 and a temperature compensation unit connected to the temperature monitoring unit 4. The temperature monitoring unit 4 is located at the corresponding power unit 20, specifically between two adjacent power units 20, and further specifically between two adjacent first interpolation units 5 of the two adjacent power units 20, for monitoring the temperature of each power unit 20. In this embodiment, the temperature monitoring unit 4 is an additional second interpolation unit added to each power unit 20. The second interpolation unit does not participate in the transmission of radio frequency power, but because it is in close contact with the surrounding first interpolation units 5, it can better reflect the temperature of the surrounding environment. Different ambient temperatures cause these second interpolation units to exhibit different turn-on voltages V. t In this embodiment, the temperature monitoring unit 4 is specifically implemented using a MOS transistor, and the gate (G), source (S), and drain (D) of the temperature monitoring unit 4 are respectively brought out. In other embodiments, the temperature monitoring unit 4 can also be implemented using devices with thermal effects such as HBTs and HEMTs.

[0031] The temperature compensation unit is connected to the temperature monitoring unit 4. In this embodiment, specifically, the three electrodes (gate G, source S, and drain D) of the MOS transistor in the temperature monitoring unit are led out and connected to the temperature compensation unit. In this embodiment, combined with... Figure 4 As shown, the temperature compensation unit specifically includes a third interpolation unit M1 and a current amplification circuit. The third interpolation unit M1 is an interpolation unit of the same size as the second interpolation unit M2. The third interpolation unit M1 is connected to the second interpolation unit M2 but located away from the location of the second interpolation unit M2 (i.e., away from the heat-generating area of ​​the RF power device). Specifically, in this embodiment, the third interpolation unit M1 is also implemented using a MOS transistor. Specifically, the gate G of the third interpolation unit M1 is connected to the gate G of the second interpolation unit M2. The drain D of the second interpolation unit M2 and the drain D of the third interpolation unit M1 are each connected to a current source. The source S of the second interpolation unit M2 and the source S of the third interpolation unit M1 are both connected to the input terminal of the current amplification circuit. The output terminal of the current amplification circuit is connected to the gate G of the second interpolation unit M2. In other embodiments, the third interpolation unit M1 can also be implemented using devices with thermal effects, such as HBTs or HEMTs.

[0032] Unlike traditional temperature compensation circuits, the second interpolation units M2 added in this invention require more precise temperature difference monitoring and therefore need to be used in conjunction with a current amplification circuit. The current amplification circuit amplifies the voltage difference output from the second interpolation unit M2 and the third interpolation unit M1, and generates a temperature compensation voltage based on this voltage difference for the second interpolation unit M2, thus performing temperature compensation control on the power unit 20 where the second interpolation unit M2 is located. In this embodiment, the current amplification circuit includes two first resistors R and an operational amplifier AMP. The non-inverting input of the operational amplifier AMP is connected to the source S of the third interpolation unit M1, forming a first node A. The inverting input of the operational amplifier AMP is connected to the source S of the second interpolation unit M2, forming a second node B. The output of the operational amplifier AMP is connected to the gate G of the second interpolation unit M2. The two first resistors R are connected in series between the first node A and the second node B. In addition, a second resistor R1 is connected between the drain D of the third interpolation unit M1 and the current source, between the drain D of the second interpolation unit M2 and the current source, and between the output terminal of the operational amplifier AMP and the gate G of the second interpolation unit M2.

[0033] The temperature compensation principle of the temperature monitoring and compensation circuit of this invention is as follows: Because the second interpolation unit M2 and the third interpolation unit M2 are at different temperatures, their turn-on voltage V... t1 and V t2 The differences result in different currents I1 and I2 flowing through the second interpolation unit M2 and the third interpolation unit M2, respectively. Since the third interpolation unit M2 is located in the heating region, V... t2 <V t1 That is, I2 > I1. Since the second interpolation unit M2 and the third interpolation unit M2 are connected to the left and right mirror current sources respectively, a portion of the extra current from the third interpolation unit M2 will flow into the left current source through the two series-connected first resistors R, making the currents flowing into the two mirror current sources equal. The current flowing through the first resistor R causes the output voltage V1 of the second interpolation unit to no longer be equal to the output voltage V2 of the third interpolation unit, and their voltage difference V2-V1 is amplified by the operational amplifier AMP and fed back to the gate terminals of the second and third interpolation units M2. This feedback mechanism allows the voltage difference V2-V1 to follow the voltage difference V2 well. t1 -V t2 Therefore, the Vg generated by the operational amplifier AMP is used to control the second interpolation unit M2, which can compensate for the effect of temperature changes on the device's turn-on voltage. Also, because V... t2This reflects the temperature at the location of M2; therefore, the compensation is for the temperature around the intercalation fingers of the second intercalation unit M2, rather than the general device temperature. This invention inserts multiple second intercalation units M2 into a large-size RF power device. Each of these second intercalation units M2 can be used with a temperature compensation unit to perform different temperature compensations for different regions.

[0034] The radio frequency power devices of the present invention include, but are not limited to, amplifiers such as high-power radio frequency power amplifiers (RFPAs) implemented based on complementary metal-oxide-semiconductor transistors (CMOS), heterojunction bipolar transistors (HBT), and high electron mobility transistors (HEMT).

[0035] All aspects, embodiments, features, and examples of this invention are to be regarded as illustrative in all respects and are not intended to limit the invention, the scope of which is defined only by the claims. Other embodiments, modifications, and uses will become apparent to those skilled in the art without departing from the spirit and scope of the invention as claimed.

[0036] The use of headings and sections in this invention is not intended to limit the invention; each section can be applied to any aspect, embodiment or feature of the invention.

[0037] Unless otherwise specifically stated, the use of the terms “include, include, including” or “have, has, or having” should generally be understood as open-ended and non-restrictive.

[0038] Although the invention has been described with reference to illustrative embodiments, those skilled in the art will understand that various other changes, omissions, and / or additions can be made without departing from the spirit and scope of the invention, and that elements of the embodiments can be substituted with substantially equivalents. Furthermore, many modifications can be made without departing from the scope of the invention to adapt particular situations or materials to the teachings of the invention. Therefore, this invention is not intended to be limited to the specific embodiments disclosed for carrying out the invention, but rather is intended to encompass all embodiments falling within the scope of the appended claims. Moreover, unless specifically stated otherwise, any use of the terms first, second, etc., does not indicate any order or importance, but is used to distinguish one element from another.

Claims

1. A radio frequency power device, characterized in that, The device includes multiple power units, each of which is composed of multiple first interpolation units connected in parallel. Each power unit is further provided with a temperature monitoring and compensation circuit. Each temperature monitoring and compensation circuit includes a temperature monitoring unit and a temperature compensation unit. The temperature monitoring unit is located between two adjacent first interpolation units of two adjacent power units and is used to monitor the temperature of each corresponding power unit. The temperature compensation unit is connected to the temperature monitoring unit and is used to generate a temperature compensation voltage to perform temperature compensation control on the temperature monitoring unit.

2. The radio frequency power device according to claim 1, characterized in that: The temperature monitoring unit is a second interdigitated unit.

3. The radio frequency power device according to claim 2, characterized in that: The temperature compensation unit includes a third interpolation unit and a current amplification circuit. The third interpolation unit is connected to the second interpolation unit and is located away from the second interpolation unit. The current amplification circuit is connected to both the second and third interpolation units and is used to amplify the voltage difference output by the second and third interpolation units. Based on the voltage difference, the circuit generates the temperature compensation voltage for the second interpolation unit to compensate and control the temperature of the power unit where the second interpolation unit is located.

4. The radio frequency power device according to claim 3, characterized in that: Both the second interpolation unit and the third interpolation unit are MOS transistors. The gates of the second interpolation unit and the third interpolation unit are connected. The drains of the second interpolation unit and the third interpolation unit are respectively connected to a current source. The sources of the second interpolation unit and the third interpolation unit are both connected to the input terminal of the current amplification circuit. The output terminal of the current amplification circuit is connected to the gate of the second interpolation unit.

5. The radio frequency power device according to claim 4, characterized in that: The current amplification circuit includes an operational amplifier. The non-inverting input terminal of the operational amplifier is connected to the source of the third interpolation unit to form a first node. The inverting input terminal of the operational amplifier is connected to the source of the second interpolation unit to form a second node. The output terminal of the operational amplifier is connected to the gate of the second interpolation unit.

6. The radio frequency power device according to claim 5, characterized in that: At least one first resistor is connected in series between the first node and the second node.

7. The radio frequency power device according to claim 6, characterized in that: A second resistor is connected between the drain of the third interpolation unit and the current source, between the drain of the second interpolation unit and the current source, and between the output of the operational amplifier and the gate of the second interpolation unit.

8. The radio frequency power device according to claim 6, characterized in that: The radio frequency power device further includes an input pad and an output pad, and the power unit is disposed between the input pad and the output pad and is connected to both the input pad and the output pad.

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