A pair of antennas with high isolation and low cross-polarization level

Abstract

The application discloses an antenna pair with high isolation and low cross polarization level, which comprises a first radiation patch and a second radiation patch arranged as two half-circle ring structures, and the first radiation patch and the second radiation patch are connected through a first branch and a second branch; the first radiation patch and the second radiation patch work in a full-wave mode; the first branch and the second branch are arranged to overlap the resonant frequencies under differential and common mode excitation of two feed ports, and good matching is ensured, so that the isolation of the first radiation patch and the second radiation patch in the band is effectively improved; through the above arrangement, the mode Q value under differential and common mode excitation is close to the same, and the first radiation patch and the second radiation patch can further have high isolation in a wider frequency range. In addition, by introducing a first short pin group and a second short pin group, the polarization current in the x-axis direction can be effectively weakened, and the cross polarization level is reduced.

Description

Technical Field

[0001] This invention belongs to the field of communication technology and relates to an antenna, specifically an antenna pair with high isolation and low cross-polarization level. Background Technology

[0002] As the most crucial component in a communication system, the performance of an antenna directly impacts the overall performance of the system. With the rapid development of wireless communication technology, multi-antenna technology has been widely applied in various types of wireless communication / sensing systems to meet the needs of signal transmission and reception and communication capacity requirements. For example, a typical continuous wave radar sensing system requires at least two antennas: one for transmitting electromagnetic waves and the other for receiving reflected electromagnetic waves. The spacing and isolation between the antenna for transmitting electromagnetic waves and the antenna for receiving reflected electromagnetic waves directly affect the performance of the radar sensing system.

[0003] In recent years, researchers both domestically and internationally have conducted extensive research to address the problem of improving the isolation between two closely spaced patch antennas. For example, the paper "Improving isolation between closely spaced patch antennas using interdigital lines" (H. Qi, et al., IEEE Antennas and Wireless Propagation Letters, vol. 15, pp. 286–289, 2016) discloses that loading an interdigital decoupling structure onto the non-radiating edges of two rectangular patch antennas can effectively solve the energy coupling problem between adjacent antennas, increasing the in-band isolation from 6 dB to over 20 dB. However, this disclosed technology objectively suffers from the following technical problem: the introduction of the interdigital decoupling structure alters the polarization current distribution, causing a sharp increase in the antenna's cross-polarization level. The paper "Two-portsame-polarized patch antenna based on two out-of-phase TM10 modes for access-point MIMO antenna application" (K.-L. Wong, et al., IEEE Antennas and Wireless Propagation Letters, vol. 20, no. 4, pp. 572-576, April 2021) discloses that by increasing the profile height of the rectangular patch antenna, the electric field null point of the TM01 mode excited by probe 1 is offset from the center position. A second excitation port is introduced at this position to excite the TM01 mode in opposite phase, achieving high port isolation and identical radiation pattern polarization. However, this antenna suffers from problems such as excessively high profile and the radiation beams of the two antennas being offset in opposite directions, making it difficult to meet the structural and performance requirements of wireless communication / inductive systems.

[0004] In view of this, it is necessary to further improve the existing multi-antenna technology. Summary of the Invention

[0005] Therefore, the technical problem to be solved by the present invention is that the existing multi-antenna technology has a high level of cross-polarization, the two antennas have opposite radiation beam directions, and it is difficult to meet the application of wireless communication / sensing systems. Therefore, the present invention proposes an antenna pair that has both high isolation and low cross-polarization level, and the same radiation beam polarization form and shape.

[0006] To solve the above-mentioned technical problems, the technical solution of the present invention is as follows:

[0007] This invention provides an antenna pair with high isolation and low cross-polarization, comprising a dielectric substrate. A first radiating patch and a second radiating patch are spaced apart on the surface of the dielectric substrate. The cross-sectional shape of the first and second radiating patches is semi-circular. A metal ground plane is disposed on the side of the dielectric substrate away from the first and second radiating patches. The first radiating patch is connected to the metal ground plane via a first short-circuit pin group and a first feed probe. The second radiating patch is connected to the metal ground plane via a second short-circuit pin group and a second feed probe. The first and second radiating patches are connected to each other via a spaced first and second branch.

[0008] Preferably, the dielectric substrate is a circular plate, and the first radiating patch and the second radiating patch are disposed at the center of the surface of the dielectric substrate. The first radiating patch and the second radiating patch are centrally symmetrical with respect to the center of the dielectric substrate. The plane containing the diameter of the first radiating patch along the x-axis and the plane containing the diameter along the y-axis of the dielectric substrate are both symmetrically arranged.

[0009] Preferably, the metal floor is spaced apart from the dielectric substrate, and the metal floor is a circular plate with the same diameter as the dielectric substrate.

[0010] Preferably, the diameters of the dielectric substrate and the metal ground plane are larger than the outer diameters of the first radiating patch and the second radiating patch.

[0011] Preferably, the first short-circuit pin group and the second short-circuit pin group are symmetrically arranged with respect to the plane containing the diameter along the y-axis of the dielectric substrate; the first short-circuit pin group includes a first short-circuit pin and a second short-circuit pin arranged at intervals, the first short-circuit pin and the second short-circuit pin are symmetrically arranged with respect to the plane containing the diameter along the x-axis of the first radiating patch, and one end of the first short-circuit pin and the second short-circuit pin is connected to the first radiating patch, and the other end passes through the dielectric substrate and is connected to the metal ground plane; the second short-circuit pin group includes a third short-circuit pin and a fourth short-circuit pin arranged at intervals, the third short-circuit pin and the fourth short-circuit pin are symmetrically arranged with respect to the plane containing the diameter along the x-axis of the second radiating patch, and one end of the third short-circuit pin and the fourth short-circuit pin is connected to the second radiating patch, and the other end passes through the dielectric substrate and is connected to the metal ground plane.

[0012] Preferably, one end of the first feed probe is connected to the first radiating patch, and the other end passes through the dielectric substrate and the metal ground plane and is connected to the first excitation source; one end of the second feed probe is connected to the second radiating patch, and the other end passes through the dielectric substrate and the metal ground plane and is connected to the second excitation source.

[0013] Preferably, the cross-sectional shape of the first and second sections is rectangular, the length of the rectangle is the distance between the first and second radiating patches, and the width of the rectangle is less than one-tenth of the operating wavelength of the antenna.

[0014] Preferably, the dielectric substrate is arranged parallel to the metal floor, and an air dielectric layer is provided between the dielectric substrate and the metal floor.

[0015] Preferably, the first power supply probe is connected to the first excitation source via a first SMA connector, and the second power supply probe is connected to the second excitation source via a second SMA connector.

[0016] Preferably, the first radiating patch and the second radiating patch are made of copper.

[0017] The technical solution of the present invention has the following advantages compared with the prior art:

[0018] The antenna pair with high isolation and low cross-polarization provided by the present invention includes a dielectric substrate. A first radiating patch and a second radiating patch are disposed at intervals on the surface of the dielectric substrate. The cross-sectional shape of the first radiating patch and the second radiating patch is semi-circular. A metal ground plane is disposed on the side of the dielectric substrate away from the first and second radiating patches. The first radiating patch is connected to the metal ground plane via a first short-circuit pin group and a first feed probe. The second radiating patch is connected to the metal ground plane via a second short-circuit pin group and a second feed probe. The first radiating patch and the second radiating patch are connected to each other via a first branch and a second branch disposed at intervals. The first and second radiating patches are configured as two opposing semi-circular ring structures, connected by a first and a second spur. The semi-circular first and second radiating patches operate in full-wave mode. The arrangement of the first and second spurs ensures that the resonant frequencies of the two feed ports overlap under differential and common-mode excitation, guaranteeing good matching and effectively improving the in-band isolation of the first and second radiating patches. This configuration also makes the mode Q values ​​under differential and common-mode excitation nearly identical, further ensuring high isolation between the first and second radiating patches over a wider frequency range. Furthermore, the introduction of a first and a second short-circuit pin group effectively reduces the polarization current in the x-axis direction, lowering the cross-polarization level. Attached Figure Description

[0019] To make the content of this invention easier to understand, the invention will be further described in detail below with reference to specific embodiments and accompanying drawings, wherein...

[0020] Figure 1 This is a top view of an antenna pair with high isolation and low cross-polarization level provided in an embodiment of the present invention;

[0021] Figure 2 This is a side view of an antenna pair with high isolation and low cross-polarization level provided in an embodiment of the present invention;

[0022] Figure 3 These are test diagrams of the reflection coefficient and transmission coefficient of an antenna pair with high isolation and low cross-polarization level provided in this embodiment of the invention.

[0023] Figure 4 This is the cross-polarization radiation pattern of the antenna pair with high isolation and low cross-polarization level provided in the embodiment of the present invention on the H-plane before and after setting the first short-circuit pin group and the second short-circuit pin group;

[0024] Figure 5 This is the E-plane and H-plane radiation pattern of the first radiating patch in the antenna pair with high isolation and low cross polarization level provided in the embodiment of the present invention;

[0025] Figure 6 This is the E-plane and H-plane radiation pattern of the second radiating patch in an antenna pair with high isolation and low cross-polarization level provided in an embodiment of the present invention.

[0026] The reference numerals in the figure are as follows: 1-Dielectric substrate; 2-First radiating patch; 3-Second radiating patch; 4-Metal ground plane; 5-First short-circuit pin group; 501-First short-circuit pin; 502-Second short-circuit pin; 6-First power supply probe; 7-Second short-circuit pin group; 701-Third short-circuit pin; 702-Fourth short-circuit pin; 8-Second power supply probe; 9-First branch; 10-Second branch; 11-First SMA connector; 12-Second SMA connector. Detailed Implementation

[0027] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. The components of the embodiments of the present invention described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.

[0028] In the description of this invention, it should be understood that the terms "upper" and "lower" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship in which the product of this invention is usually placed during use, or the orientation or positional relationship in which those skilled in the art would usually understand. They are only used to facilitate the description of this invention and to simplify the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0029] The terms "first," "second," etc., used in this invention are merely for descriptive purposes and have no special meaning.

[0030] In the description of this invention, it should also be noted that, unless otherwise explicitly specified and limited, the terms "set" and "install" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a direct connection or an indirect connection through an intermediate medium. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0031] Example

[0032] This embodiment provides an antenna pair with high isolation and low cross-polarization level. Please refer to [link / reference]. Figures 1-2 The antenna pair with high isolation and low cross-polarization includes a dielectric substrate 1. The surface of the dielectric substrate 1 is provided with a first radiating patch 2 and a second radiating patch 3 that are spaced apart and arranged opposite to each other. The cross-sectional shape of the first radiating patch 2 and the second radiating patch 3 is semi-circular. The centers of the first radiating patch 2 and the second radiating patch 3 are arranged adjacent to each other in the horizontal direction, so that the first radiating patch 2 and the second radiating patch 3 are arranged opposite to each other to form an antenna pair. A metal ground plate 4 is provided on the side of the dielectric substrate 1 away from the first radiating patch 2 and the second radiating patch 3. The first radiating patch 2 is connected to the metal ground plate 4 through a first short-circuit pin group 5 and a first feed probe 6. The second radiating patch 3 is connected to the metal ground plate 4 through a second short-circuit pin group 7 and a second feed probe 8. The first radiating patch 2 and the second radiating patch 3 are connected by a first branch 9 and a second branch 10 that are spaced apart.

[0033] The antenna pair with high isolation and low cross-polarization provided in this embodiment achieves its high isolation and low cross-polarization level as follows: A semi-circular annular first radiating patch 2 and a second radiating patch 3, spaced apart and oppositely arranged, are disposed on the surface of the dielectric substrate 1. The first radiating patch 2 and the second radiating patch 3 are connected by a spaced first branch 9 and a second branch 10. The semi-circular first radiating patch 2 and the second radiating patch 3 operate in full-wave mode. By introducing the first branch 9 and the second branch 10, the resonant frequencies of the two feed ports under differential and common-mode excitation overlap, ensuring good matching. At this time, the in-band isolation of the first radiating patch 2 and the second radiating patch 3 is effectively improved. Simultaneously, the mode Q values ​​under differential and common-mode excitation are nearly identical, thereby further ensuring that the first radiating patch 2 and the second radiating patch 3 have high isolation over a wider frequency range. In addition, the radiation of the polarization current in the x-axis direction of the semi-circular annular first radiating patch 2 and the second radiating patch 3, which operate in full-wave mode, will increase the cross-polarization level of the H-plane. In this embodiment, by using the first short-circuit pin group 5 and the second short-circuit pin group 7 to connect the first radiating patch 2 and the second radiating patch 3 to the metal ground plate 4, the polarization current in the x-axis direction can be effectively reduced, thereby achieving the effect of reducing the cross-polarization level.

[0034] In this embodiment, the semi-circular first radiating patch 2 and second radiating patch 3 have the same structure and are symmetrically positioned. Specifically, the dielectric substrate 1 is a circular plate, and the first radiating patch 2 and second radiating patch 3 are disposed opposite each other at the center of the circular dielectric substrate 1, with a gap between their centers, so that the first radiating patch 2 and second radiating patch 3 are spaced apart. The first radiating patch 2 and second radiating patch 3 are centrally symmetrical with respect to the center of the dielectric substrate 1, and the first radiating patch 2 and second radiating patch 3 are symmetrical with respect to the plane containing the diameter along the x-axis and the plane containing the diameter along the y-axis of the dielectric substrate (e.g., ...). Figure 1 As shown (in the diagram), it can be understood that the x-axis direction refers to... Figure 1 The horizontal direction indicated by the center line, and the y-axis direction indicate... Figure 1 The vertical direction indicated in the middle. This arrangement makes the first radiating patch 2 and the second radiating patch 3 structurally symmetrical, thereby ensuring that the reflection coefficients of the first radiating patch 2 and the second radiating patch 3 completely overlap.

[0035] The first radiating patch 2 and the second radiating patch 3 are connected by a first branch 9 and a second branch 10. The first branch 9 and the second branch 10 are parallel and equidistantly distributed on both sides of the diameter of the dielectric substrate 1 in the x-axis direction. The cross-sectional shape of the first branch 9 and the second branch 10 is rectangular. The two rectangles have the same structure and size and are symmetrically arranged with respect to the plane containing the diameter of the dielectric substrate 1 in the x-axis direction. The length of the rectangular first branch 9 and the second branch 10 is the distance between the first radiating patch 2 and the second radiating patch 3, and the width is less than one-tenth of the antenna operating wavelength. In this embodiment, it is preferably 1-2 mm to form a narrow branch structure.

[0036] The metal floor 4 is disposed on the side of the dielectric substrate 1 away from the first radiating patch 2 and the second radiating patch 3, i.e., as shown below. Figure 2 As shown, the first radiating patch 2 and the second radiating patch 3 are disposed on the top surface of the dielectric substrate 1, and the metal ground plate 4 is disposed at a distance from the bottom of the dielectric substrate 1, and is arranged parallel to the dielectric substrate 1. The shape of the metal ground plate 4 is the same as that of the dielectric substrate 1, which is also a circular plate, and the diameter of the metal ground plate 4 is the same as that of the dielectric substrate 1, so that the shape and size of the metal ground plate 4 are the same as those of the dielectric substrate 1. The diameter of the dielectric substrate 1 and the metal ground plate 4 is larger than the outer diameter of the first radiating patch 2 and the second radiating patch 3, so that the sum of the areas of the first radiating patch 2, the second radiating patch 3 and the interval between them is smaller than the area of ​​the dielectric substrate 1.

[0037] To ensure a good electrical connection between the first radiating patch 2, the second radiating patch 3, and the metal ground plane 4, the first short-circuit pin group 5 includes a first short-circuit pin 501 and a second short-circuit pin 502 spaced apart. The first short-circuit pin 501 and the second short-circuit pin 502 are symmetrically arranged with respect to the plane containing the diameter of the first radiating patch 2, the second radiating patch 3, and the dielectric substrate 1 along the x-axis. One end of each of the first short-circuit pin 501 and the second short-circuit pin 502 is connected to the first radiating patch 2, and the other end passes through the dielectric substrate 1 and is connected to the metal ground plane 4, thereby achieving a good electrical connection between the upper and lower surfaces of the first short-circuit pin 501 and the second short-circuit pin 502 and the first radiating patch 2 and the metal ground plane 4, respectively.

[0038] The second short-circuit pin group 7 includes a third short-circuit pin 701 and a fourth short-circuit pin 702 spaced apart. The third short-circuit pin 701 and the fourth short-circuit pin 702 are symmetrically arranged with respect to the plane containing the diameters of the first radiating patch 2, the second radiating patch 3, and the dielectric substrate 1 along the x-axis. The spacing between the first short-circuit pin 501 and the second short-circuit pin 502 is the same as the spacing between the third short-circuit pin 701 and the fourth short-circuit pin 702, making the first short-circuit pin group 5 and the second short-circuit pin group 7 symmetrically arranged with respect to the plane containing the diameters of the dielectric substrate 1 along the y-axis. One end of the third short-circuit pin 701 and the fourth short-circuit pin 702 is connected to the second radiating patch 3, and the other end passes through the dielectric substrate 1 and is connected to the metal ground plane 4, thereby achieving good electrical connection between the upper and lower surfaces of the third short-circuit pin 701 and the second short-circuit pin 702 and the second radiating patch 3 and the metal ground plane 4, respectively.

[0039] The first radiating patch 2 and the second radiating patch 3 are also connected to the metal ground plane 4 via the first feed probe 6 and the second feed probe 8, respectively. In the x-axis direction, the first feed probe 6 is positioned on the side of the first short-circuit pin group 5 away from the second radiating patch 3, and the second feed probe 8 is positioned on the side of the second short-circuit pin group 7 away from the first radiating patch 2. The first feed probe 6 and the second feed probe 8 are symmetrically arranged with respect to the plane containing the diameter of the dielectric substrate 1 in the y-axis direction. One end of the first feed probe 6 is connected to the first radiating patch 2, and the other end passes through the dielectric substrate 1 and the metal ground plane 4 to connect to the first excitation source. One end of the second feed probe 8 is connected to the second radiating patch 3, and the other end passes through the dielectric substrate 1 and the metal ground plane 4 to connect to the second excitation source, forming the antenna's feeding structure. To achieve connection with an external excitation source, the first feed probe 6 is connected to the first excitation source via a first SMA connector 11, and the second feed probe 8 is connected to the second excitation source via a second SMA connector 12. The top of the first feed probe 6 is connected to the first radiating patch 2, and the bottom passes through the dielectric substrate 1 and the metal ground plane 4 in sequence before being connected to the first SMA connector 11. The top of the second feed probe 8 is connected to the second radiating patch 3, and the bottom passes through the dielectric substrate 1 and the metal ground plane 4 in sequence before being connected to the second SMA connector 12.

[0040] The dielectric substrate 1 and the metal ground plane 4 are arranged in a spaced and parallel manner through the support connection at the upper and lower ends of the first short-circuit pin group 5, the second short-circuit pin group 7, the first power supply probe 6, and the second power supply probe 8. An air dielectric layer is filled in the space between the dielectric substrate 1 and the metal ground plane 4.

[0041] To achieve good isolation and low cross-polarization, in this embodiment, the first radiating patch 2 and the second radiating patch 3 are made of copper, and the first branch 9 and the second branch 10 can be made of a metal with conductive properties. In this embodiment, copper is preferred.

[0042] Experimental Example

[0043] 1. Test the reflection coefficient and transmission coefficient of the antenna pair with high isolation and low cross-polarization level provided in the above embodiment. The test results are as follows: Figure 3 As shown in the figure, curve S11 refers to the port reflection coefficient curve of the first radiating patch 2, and curve S22 is the port reflection coefficient curve of the second radiating patch 3. Figure 3 As can be seen, due to the completely symmetrical arrangement of the first radiating patch 2 and the second radiating patch 3, the reflection coefficients of the two antennas formed by the two radiating patches completely overlap, that is, curves S11 and S22 overlap, and good matching is achieved near the 3.6GHz frequency. Curve S21 is the port transmission coefficient curve from the first radiating patch 2 to the second radiating patch 3. From the transmission coefficients of the two antennas, it can be seen that the transmission coefficient values ​​of both antennas in the operating frequency band are less than -30dB, indicating that the two antennas formed by the first radiating patch 2 and the second radiating patch 3 achieve very good port isolation, which can well meet the performance requirements of the radar sensing system.

[0044] 2. Test the cross-polarization radiation patterns on the H-plane (magnetic plane) of the antenna pair with high isolation and low cross-polarization provided in the above embodiment before and after setting the first short-circuit pin group 5 and the second short-circuit pin group 7, respectively. The test results are as follows: Figure 4 As shown, from Figure 4 It can be seen that after setting the first short-circuit pin group 5 and the second short-circuit pin group 7, the cross-polarization level on the H-plane was reduced by 8.8 dB, and the cross-polarization level was effectively suppressed.

[0045] 3. Test the radiation patterns of the E-plane (electric plane) and H-plane (magnetic plane) of the first radiating patch 2 respectively. The test results are as follows: Figure 5 As shown, the radiation patterns of the E-plane and H-plane of the second radiation patch 3 were tested respectively, and the test results are as follows. Figure 6 As shown. From Figures 5-6 As can be seen from the test diagram, the radiation beams of the first radiating patch 2 and the second radiating patch 3 both radiate directly upwards, with a peak gain of up to 10.2 dBi. In addition, due to the first short-circuit pin group 5 and the second short-circuit pin group 7 set in the antenna, the cross-polarization ratio of the first radiating patch 2 and the second radiating patch 3 on the H plane is greater than 20 dB.

[0046] As can be seen from the above test results, the antenna pair with high isolation and low cross-polarization provided in this embodiment, the first radiating patch 2 and the second radiating patch 3, can achieve the technical effects of high port isolation, high radiation gain, high polarization purity and low cross-polarization under compact placement conditions. At the same time, it also has the advantages of the same radiation beam polarization and consistent shape, thus meeting the structural and performance requirements of the radar sensing system.

[0047] Obviously, the above embodiments are merely illustrative examples for clear explanation and are not intended to limit the implementation. Those skilled in the art will recognize that other variations or modifications can be made based on the above description. It is neither necessary nor possible to exhaustively list all possible implementations here. However, obvious variations or modifications derived therefrom are still within the scope of protection of this invention.

Claims

1. An antenna pair with high isolation and low cross-polarization level, characterized in that, The device includes a dielectric substrate. A first radiating patch and a second radiating patch are spaced apart on the surface of the dielectric substrate. The cross-sectional shape of the first and second radiating patches is semi-circular, and the semi-circular first and second radiating patches operate in full-wave mode. A metal ground plane is disposed on the side of the dielectric substrate away from the first and second radiating patches. The first radiating patch is connected to the metal ground plane via a first short-circuit pin group and a first feed probe, and the second radiating patch is connected to the metal ground plane via a second short-circuit pin group and a second feed probe. The first and second radiating patches are connected by a first and a second branch spaced apart, and the arrangement of the first and second branches causes the resonant frequencies of the two feed ports to overlap under differential and common-mode excitation. The dielectric substrate is a circular plate. The first and second radiating patches are disposed at the center of the surface of the dielectric substrate and are centrally symmetrical with respect to the center of the dielectric substrate. The first and second radiating patches are symmetrically arranged in the plane containing their diameters along the x-axis and y-axis of the dielectric substrate.

2. The antenna pair with high isolation and low cross-polarization level according to claim 1, characterized in that, The metal floor is spaced apart from the dielectric substrate, and the metal floor is a circular plate with the same diameter as the dielectric substrate.

3. The antenna pair with high isolation and low cross-polarization level according to claim 2, characterized in that, The diameters of the dielectric substrate and the metal ground plane are larger than the outer diameters of the first radiating patch and the second radiating patch.

4. The antenna pair with high isolation and low cross-polarization level according to any one of claims 1-3, characterized in that, The first short-circuit pin group and the second short-circuit pin group are symmetrically arranged with respect to the plane containing the diameter along the y-axis of the dielectric substrate. The first short-circuit pin group includes a first short-circuit pin and a second short-circuit pin arranged at intervals. The first short-circuit pin and the second short-circuit pin are symmetrically arranged with respect to the plane containing the diameter along the x-axis of the first radiating patch. One end of the first short-circuit pin and the second short-circuit pin are connected to the first radiating patch, and the other end passes through the dielectric substrate and is connected to the metal ground plane. The second short-circuit pin group includes a third short-circuit pin and a fourth short-circuit pin arranged at intervals. The third short-circuit pin and the fourth short-circuit pin are symmetrically arranged with respect to the plane containing the diameter along the x-axis of the second radiating patch. One end of the third short-circuit pin and the fourth short-circuit pin are connected to the second radiating patch, and the other end passes through the dielectric substrate and is connected to the metal ground plane.

5. The antenna pair with high isolation and low cross-polarization level according to claim 4, characterized in that, One end of the first feed probe is connected to the first radiating patch, and the other end passes through the dielectric substrate and the metal ground plane and is connected to the first excitation source; One end of the second feed probe is connected to the second radiating patch, and the other end passes through the dielectric substrate and the metal ground plane and is connected to the second excitation source.

6. The antenna pair with high isolation and low cross-polarization level according to claim 5, characterized in that, The cross-sectional shape of the first and second sections is rectangular, the length of the rectangle is the distance between the first and second radiating patches, and the width of the rectangle is less than one-tenth of the operating wavelength of the antenna.

7. The antenna pair with high isolation and low cross-polarization level according to claim 6, characterized in that, The dielectric substrate is arranged parallel to the metal floor, and an air dielectric layer is provided between the dielectric substrate and the metal floor.

8. The antenna pair with high isolation and low cross-polarization level according to claim 7, characterized in that, The first power supply probe is connected to the first excitation source via a first SMA connector, and the second power supply probe is connected to the second excitation source via a second SMA connector.

9. The antenna pair with high isolation and low cross-polarization level according to claim 8, characterized in that, The first radiating patch and the second radiating patch are made of copper.

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