A method, apparatus and equipment for processing infrared detector response signals

Abstract

This application provides an infrared detector response signal processing method, apparatus, and device. By combining the measured response signal, real ambient temperature, and real target temperature in a real scene with a response signal model, circuit parameter information representing the actual circuit parameters of the infrared detector is calculated. Since the actual circuit parameters of the infrared detector do not change with ambient temperature, the calibration information of the infrared detector under different ambient temperatures can be deduced based on the determined circuit parameter information and the response signal model. Because the calibration information is calculated based on a theoretical model, it does not require measurement at the corresponding ambient temperature and is therefore not limited by the temperature control system. Using this application embodiment, a wide applicable temperature range can be achieved, and the calibration information to be calibrated at different temperatures can be accurately determined. The infrared detector calibrated based on the response temperature drift has higher measurement accuracy.

Description

Technical Field

[0001] This application relates to the field of infrared detection technology, and in particular to a method, apparatus and equipment for processing infrared detector response signals. Background Technology

[0002] An infrared detector, as a temperature measuring device, converts incident infrared radiation signals into electrical signals through its internal response unit. Since this electrical signal is generated in response to the infrared radiation signal, it is called the response signal. Furthermore, because the infrared radiation signal depends on the temperature of the object being measured and the responsivity of the infrared detector, and the responsivity changes with ambient temperature, the response signal converted from the infrared radiation signal will also change with ambient temperature. This phenomenon of the response signal changing with ambient temperature is referred to as temperature drift.

[0003] If the correspondence between the response signal and the ambient temperature during the temperature drift process can be determined, the temperature of the measured object can be calculated based on the response signal, thus achieving temperature measurement. In related technologies, an infrared detector can be placed in a specific experimental setting, and the infrared detector can be used to measure the temperature of an object with a known temperature. The correspondence can then be obtained based on the response signal output by the infrared detector, the temperature of the object, and the ambient temperature of the experimental setting.

[0004] However, since the correspondence is also affected by the ambient temperature, the correspondence obtained in the relevant technologies can only be applied to scenarios with ambient temperatures similar to those of the experimental scenario. Due to the limitations of the temperature control system, the ambient temperature of the experimental scenario can only vary within a certain range, which may be significantly different from the ambient temperature of the actual scenario. As a result, the obtained correspondence cannot be applied to the actual temperature measurement scenario, and thus cannot accurately measure the temperature. Summary of the Invention

[0005] The purpose of this application is to provide an infrared detector response signal processing method, apparatus, and device to improve the measurement accuracy of the infrared detector. The specific technical solution is as follows:

[0006] In a first aspect, embodiments of this application provide an infrared detector response signal processing method, the method comprising:

[0007] Acquire multiple measured response signals and the corresponding real ambient temperature and real target temperature for each measured response signal, wherein the measured response signal is the response signal output when the infrared detector is at the real ambient temperature and the temperature of the measured object is the real target temperature;

[0008] Based on the response signal model, each of the measured response signals, and the corresponding real ambient temperature and real target temperature, the circuit parameter information of the infrared detector is determined. The circuit parameter information is used to represent the actual circuit parameters of the infrared detector, and the response signal model is used to represent the mapping relationship between the response signal output by the infrared detector and the circuit parameters of the infrared detector, the ambient temperature of the infrared detector, and the target temperature of the object measured by the infrared detector.

[0009] Based on the response signal model and the circuit parameter information, the calibration information of the infrared detector under different ambient temperatures is determined. The calibration information is used to represent the correspondence between the response signal output by the infrared detector and the target temperature.

[0010] In conjunction with the first aspect, this application provides a second possible embodiment, wherein determining the circuit parameter information of the infrared detector based on the response signal model, each of the measured response signals, and the corresponding real ambient temperature and real target temperature includes:

[0011] Based on the response signal model, each of the measured response signals, and the corresponding real ambient temperature, real target temperature, and rated circuit parameters of the infrared detector, the circuit parameter information of the infrared detector is determined.

[0012] In conjunction with the second possible embodiment of the first aspect, this application provides a third possible embodiment, wherein the response signal model is used to represent: the mapping relationship between the response signal output by the infrared detector and the rated circuit parameters of the infrared detector, the parameter difference between the rated circuit parameters and the actual circuit parameters, the real ambient temperature of the infrared detector, and the target temperature of the object measured by the infrared detector;

[0013] The step of determining the actual circuit parameters of the infrared detector based on the response signal model, each of the measured response signals, and the corresponding real ambient temperature, real target temperature, and rated circuit parameters of the infrared detector includes:

[0014] Based on the response signal model, each of the measured response signals, and the corresponding real ambient temperature, real target temperature, and rated circuit parameters of the infrared detector, the parameter differences are determined and used as circuit parameter information.

[0015] In conjunction with the first aspect, this application provides a fourth possible embodiment, wherein determining the calibration information of the infrared detector under different ambient temperatures based on the response signal model and the circuit parameter information includes:

[0016] The actual circuit parameters represented by the circuit parameter information are substituted into the circuit parameters of the response signal model to obtain the mapping relationship between the response signal and the ambient temperature and the target temperature, which is used as calibration information.

[0017] In conjunction with the first aspect, this application provides a fifth possible embodiment, wherein determining the calibration information of the infrared detector under different ambient temperatures based on the response signal model and the circuit parameter information includes:

[0018] Acquire a first design response signal output by the infrared detector when measuring the temperature of a first reference target object at a standard ambient temperature, and a second response signal output by the infrared detector when measuring the temperature of a second reference target object at the same standard ambient temperature;

[0019] Based on the response signal model and the circuit parameter information, determine the first reference response signal corresponding to the first reference target temperature and the second reference response signal corresponding to the second reference target temperature under the actual target temperature;

[0020] The ratio of the reference difference to the design difference is determined as the response temperature drift of the infrared detector at the target temperature, serving as calibration information. The reference difference is the difference between the first reference response signal and the second reference response signal, and the design difference is the difference between the first design response signal and the second design response signal.

[0021] Secondly, embodiments of this application provide an infrared detector response signal processing apparatus, the apparatus comprising:

[0022] The acquisition module is used to acquire multiple measured response signals and the real ambient temperature and real target temperature corresponding to each measured response signal. The measured response signal is the response signal output when the infrared detector is at the real ambient temperature and the temperature of the measured object is the real target temperature.

[0023] The first determining module is used to determine the circuit parameter information of the infrared detector based on the response signal model, each of the measured response signals, and the real ambient temperature and real target temperature corresponding to each of the measured response signals. The circuit parameter information is used to represent the actual circuit parameters of the infrared detector, and the response signal model is used to represent the mapping relationship between the response signal output by the infrared detector and the circuit parameters of the infrared detector, the ambient temperature where the infrared detector is located, and the target temperature of the object measured by the infrared detector.

[0024] The second determining module is used to determine the calibration information of the infrared detector under different ambient temperatures based on the response signal model and the circuit parameter information. The calibration information is used to represent the correspondence between the response signal output by the infrared detector and the target temperature.

[0025] In conjunction with the second aspect, this application provides a second possible embodiment, wherein the first determining module is further configured to determine the circuit parameter information of the infrared detector based on the response signal model, each of the measured response signals, and the real ambient temperature, real target temperature, and rated circuit parameters of the infrared detector corresponding to each of the measured response signals;

[0026] The response signal model is used to represent the mapping relationship between the response signal output by the infrared detector and the rated circuit parameters of the infrared detector, the parameter difference between the rated circuit parameters and the actual circuit parameters, the real ambient temperature of the infrared detector, and the target temperature of the object measured by the infrared detector.

[0027] The first determining module is further configured to determine the parameter differences based on the response signal model, each of the measured response signals, and the actual ambient temperature, actual target temperature, and rated circuit parameters of the infrared detector corresponding to each of the measured response signals, as circuit parameter information.

[0028] In conjunction with the second aspect, in a third possible embodiment, the second determining module is further configured to: substitute the actual circuit parameters represented by the circuit parameter information into the circuit parameters of the response signal model to obtain the mapping relationship between the response signal and the ambient temperature and the target temperature, as calibration information;

[0029] The second determining module is further configured to acquire a first design response signal output by the infrared detector when measuring the temperature of a first reference target object at a standard ambient temperature, and a second response signal output by the infrared detector when measuring the temperature of a second reference target object at the standard ambient temperature;

[0030] Based on the response signal model and the circuit parameter information, determine the first reference response signal corresponding to the first reference target temperature and the second reference response signal corresponding to the second reference target temperature under the actual target temperature;

[0031] The ratio of the reference difference to the design difference is determined as the response temperature drift of the infrared detector at the target temperature, serving as calibration information. The reference difference is the difference between the first reference response signal and the second reference response signal, and the design difference is the difference between the first design response signal and the second design response signal.

[0032] Thirdly, embodiments of this application provide an electronic device, including a memory and a processor, wherein the memory is used to store a computer program; and the processor is used to execute the program stored in the memory to implement the steps of the infrared detector response signal processing method described in the first aspect.

[0033] Fourthly, embodiments of this application provide a computer-readable storage medium storing a computer program, which, when executed by a processor, implements the steps of the infrared detector response signal processing method described in the first aspect.

[0034] Beneficial effects of the embodiments in this application:

[0035] This application provides an infrared detector response signal processing method, apparatus, and device. By combining the measured response signal, real ambient temperature, and real target temperature in a real scene with a response signal model, circuit parameter information representing the actual circuit parameters of the infrared detector is calculated. Since the actual circuit parameters of the infrared detector do not change with ambient temperature, the calibration information of the infrared detector under different ambient temperatures can be deduced based on the determined circuit parameter information and the response signal model. Because the calibration information is calculated based on a theoretical model, it does not require measurement at the corresponding ambient temperature and is therefore not limited by the temperature control system. Therefore, this application embodiment is chosen because it has a wide applicable temperature range and can accurately determine the calibration information to be calibrated at different temperatures. The infrared detector calibrated based on the response temperature drift has higher measurement accuracy.

[0036] Of course, implementing any product or method of this application does not necessarily require achieving all of the advantages described above at the same time. Attached Figure Description

[0037] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other embodiments can be obtained based on these drawings.

[0038] Figure 1a A schematic diagram of a temperature-response signal curve provided in an embodiment of this application;

[0039] Figure 1b A schematic flowchart of an infrared detector response signal processing method provided in an embodiment of this application;

[0040] Figure 2a A circuit diagram illustrating an infrared detector response signal processing method provided in an embodiment of this application;

[0041] Figure 2b Another circuit diagram for the infrared detector response signal processing method provided in the embodiments of this application;

[0042] Figure 3a A schematic diagram of the standard response temperature drift curve under actual parameter fluctuations of the response temperature drift provided in the embodiments of this application;

[0043] Figure 3b This is a schematic diagram of the predicted response temperature drift curve under the fluctuation of the response temperature drift prediction parameters provided in the embodiments of this application;

[0044] Figure 3c A schematic diagram illustrating the deviation trend between the response temperature drift and the actual standard temperature drift provided in the embodiments of this application;

[0045] Figure 4 A schematic diagram of the logic structure of an infrared detector response signal processing device provided in an embodiment of this application;

[0046] Figure 5 This is a schematic diagram of the structure of an electronic device provided in an embodiment of this application. Detailed Implementation

[0047] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art based on this application are within the scope of protection of this application.

[0048] Infrared detectors, as devices that convert incident infrared radiation signals into electrical signals, play an irreplaceable role in temperature measurement and detection. Exemplary applications include infrared thermometers, infrared thermometers, infrared burglar detectors, and thermal imaging cameras. The principle behind infrared detectors' temperature measurement is as follows: they acquire the infrared radiation signal emitted by the target object, convert the received infrared radiation signal into an electrical signal through an internal response unit, and determine the temperature corresponding to the converted electrical signal based on the correspondence between the electrical signal and temperature, thus determining the temperature of the object.

[0049] Since the electrical signal converted by the response unit is generated in response to the infrared radiation signal, it is also called the response signal in the field of infrared thermometry. Theoretically, if the infrared radiation signal incident on the infrared detector comes only from the infrared radiation signal generated by the object being measured, then the response signal converted by the response unit corresponds exactly to the temperature of the object being measured. The temperature of the object being measured corresponding to the currently converted response signal can be determined based on the correspondence between the response signal and the temperature of the object being measured.

[0050] For example, if the correspondence between the response signal obtained by the response unit and the temperature of the measured object is plotted in a two-dimensional coordinate system, a result similar to... Figure 1a The temperature-response signal relationship curve is shown. Furthermore, the temperature of the measured object can be determined based on the correspondence between the acquired response signal and temperature, for reference... Figure 1a If the response unit converts the signal to obtain the response signal Vout = V1, then the temperature T = T1 of the measured object can be determined.

[0051] It is evident that if the correspondence between the response signal and the temperature of the measured object can be determined, the object's temperature can be measured using this correspondence. To determine this correspondence, related technologies propose placing an infrared detector in a specific experimental setting, using the detector to measure the temperature of an object with a known temperature, recording the output response signal of the infrared detector and the object's temperature, and then determining the correspondence based on the recorded results.

[0052] However, since the infrared radiation signal received by the infrared detector's response unit includes not only the infrared radiation signal from the object being measured, but also the infrared radiation signal from other objects in the environment, as well as the infrared radiation signal generated by the response unit itself, the correspondence between the response signal output by the infrared detector and the temperature of the measured object is affected by the ambient temperature and the heat generated by its own components. That is, Figure 1a The temperature-response signal relationship curve shown (hereinafter referred to as the response curve) will change with the change of ambient temperature. Therefore, the response signal will change with the change of ambient temperature. In this paper, this phenomenon is called temperature drift (abbreviated as temperature drift).

[0053] Therefore, the correspondence between the temperature of an object and the response signal obtained by using related technologies is only applicable to scenarios with temperatures similar to those in the experimental environment. However, due to limitations in the performance of the temperature control system, the ambient temperature of the experimental environment can only vary within a certain range, which may differ significantly from the actual ambient temperature. Consequently, the obtained correspondence cannot be applied to actual temperature measurement scenarios, and therefore, accurate temperature measurement is impossible.

[0054] Therefore, to improve the measurement accuracy of infrared detectors, related technologies propose changing the bias current superimposed on the response unit to alter the surface temperature of the infrared detector after thermal equilibrium, thereby simulating changes in ambient temperature and determining the response signal under different ambient temperatures. This allows for the determination of the correspondence between the response signal and the ambient temperature. However, in practice, the temperature variation that the internal circuitry of the response unit can generate is relatively small, making it difficult to simulate ambient temperature changes. Furthermore, this approach only covers a small temperature range and is not suitable for large-scale, continuous operating temperatures. Consequently, the obtained correspondence between the response signal and ambient temperature is only applicable to a few discrete ambient temperatures within a small range, failing to effectively apply to the ambient temperatures in actual measurement scenarios and making it difficult to guarantee the measurement accuracy of the infrared detector.

[0055] For example, suppose the temperature drift at these ambient temperatures is determined by simulating 26℃, 27℃, ..., 30℃ sequentially using bias current. However, the ambient temperature in real-world scenarios may be much higher than 30℃ or much lower than 26℃, or it may be between these discrete temperatures, such as 26.5℃. Therefore, the determined temperature drift is difficult to apply to real-world scenarios.

[0056] In view of this, embodiments of this application provide an infrared detector response signal processing method. The subject executing this infrared detector response signal processing method can be any electronic device with temperature drift calibration, including but not limited to personal computers, mobile terminals, or servers, etc.

[0057] like Figure 1b As shown, the infrared detector response signal processing method provided in this application embodiment may include the following steps:

[0058] S11. Acquire multiple measured response signals and the corresponding real ambient temperature and real target temperature for each measured response signal.

[0059] The measured response signal is the response signal output when the infrared detector is at the actual ambient temperature and the temperature of the measured object is the actual target temperature.

[0060] S12. Based on the response signal model, each measured response signal, and the corresponding real ambient temperature and real target temperature, determine the circuit parameter information of the infrared detector.

[0061] Among them, the circuit parameter information is used to represent the actual circuit parameters of the infrared detector, and the response signal model is used to represent the mapping relationship between the response signal output by the infrared detector and the circuit parameters of the infrared detector, the ambient temperature of the infrared detector, and the target temperature of the object measured by the infrared detector.

[0062] S13. Based on the response signal model and circuit parameter information, determine the calibration information of the infrared detector under different ambient temperatures.

[0063] The calibration information is used to represent the correspondence between the response signal output by the infrared detector and the target temperature.

[0064] In the embodiments provided in this application, circuit parameter information representing the actual circuit parameters of the infrared detector is calculated by combining the measured response signal, actual ambient temperature, and actual target temperature in a real scene with a response signal model. Since the actual circuit parameters of the infrared detector do not change with the ambient temperature, the calibration information of the infrared detector under different ambient temperatures can be deduced based on the determined circuit parameter information and the response signal model. Because the calibration information is calculated based on a theoretical model, it does not require measurement at the corresponding ambient temperature and is therefore not limited by the temperature control system. Therefore, the embodiments of this application are chosen because they have a wide applicable temperature range, can accurately determine the calibration information to be calibrated at different temperatures, and provide higher measurement accuracy for the calibrated infrared detector based on the response temperature drift.

[0065] On the other hand, since calibration information at a specific ambient temperature can be obtained without measurement at that temperature, this application can acquire calibration information at continuous temperatures, enabling subsequent temperature measurements based on more accurate calibration information. For example, assuming the actual ambient temperature is 26.1℃, according to related technologies, if measurements are only performed in experimental scenarios with ambient temperatures of 26℃ and 27℃, only temperature drift at 26℃ and 27℃ can be obtained. Therefore, only the temperature drift at 26℃ can be used for temperature measurement. However, there is a certain difference between the temperature drift at 26℃ and 26.1℃, so using the temperature drift at 26℃ cannot accurately measure the temperature. However, if the infrared detector response signal processing method provided in this application is used, calibration information at 26.1℃ can be obtained based on the response signal model and circuit parameter information, thereby enabling more accurate temperature measurement based on this calibration information.

[0066] S11-S13 will be explained separately below:

[0067] In S11, the infrared detector is any detector capable of converting infrared signals or infrared radiation signals (i.e., temperature signals) into electrical signals, such as a vanadium oxide detector. The circuit of the infrared detector refers to its equivalent circuit. The structure of the infrared detector differs in different application scenarios; therefore, the circuit of the infrared detector varies depending on the application scenario. For example, in one possible embodiment, the circuit of the infrared detector is as follows: Figure 2a As shown, in another possible embodiment, the circuitry of the infrared detector is as follows: Figure 2b As shown. For ease of description, the following text will only use the example of... Figure 2a The circuit shown is used as an example for explanation. The principle is the same for other circuits of infrared detectors, and will not be repeated here.

[0068] To ensure the accuracy of the acquired measured response signal, the ambient temperature of the infrared detector should be kept constant at the actual ambient temperature, and the temperature of the measured object should be kept constant at the target temperature, all during the measurement process. Therefore, in this embodiment, a constant heat source is set up in a constant temperature test scenario, the infrared detector is aligned with the heat source, and the response signal output by the infrared detector is measured. This yields the measured response signal when the infrared detector is at the actual ambient temperature and the temperature of the measured object is the actual target temperature.

[0069] The constant temperature test scenario is a test environment with a constant temperature, such as a constant temperature chamber. The constant heat source set in the constant temperature scenario is an object that can stably radiate infrared radiation signals, such as a blackbody that can stably radiate infrared radiation signals.

[0070] To ensure that the temperature-response signal obtained from the test covers a wide range of ambient temperatures and is applicable to objects at different temperatures, in one possible embodiment, multiple isothermal test scenarios can be set up during step S11. Each isothermal test scenario corresponds to a different ambient temperature, and a heat source is placed in each isothermal test scenario at the same temperature.

[0071] In another possible embodiment, when performing step S11, multiple constant temperature test scenarios can be set up, each constant temperature test scenario has the same ambient temperature, and a heat source is placed in each constant temperature test scenario, with the temperature of the heat source placed in each constant temperature test scenario being different.

[0072] By controlling the infrared detector to measure the heat source in the multiple isothermal test scenarios set above, multiple measured response signals output by the infrared detector can be obtained. At this point, the temperature of each isothermal test scenario is the actual ambient temperature corresponding to each measured response signal, and the temperature of the heat source in each isothermal test scenario is the actual target temperature corresponding to each measured response signal. To maintain a stable infrared radiation signal from the heat source, a power supply is required. Since the temperature of the heat source is related to the power supply's power, the power supply's power will be used to represent the temperature of the heat source in the following text.

[0073] In S12, according to relevant knowledge of heat transfer, the temperature of the thermistor in the infrared detector can be calculated based on the ambient temperature and heat source temperature of the isothermal test scenario. In other words, the infrared radiation signal generated by the infrared detector itself can be calculated based on the ambient temperature and heat source temperature in the isothermal test scenario. In other words, the temperature of the thermistor in the infrared detector is known in the isothermal test scenario.

[0074] It is understandable that for a circuit, when the parameters of each circuit component (such as the resistance value, the threshold voltage of the MOSFET, etc.) are fixed, the output electrical signal of the circuit is theoretically unique and can be determined based on the circuit structure and the parameters of each circuit component. For an infrared detector circuit, the factor affecting the circuit parameters is the temperature of the thermistor material in the circuit, such as the temperature of vanadium oxide. In a constant-temperature testing scenario, as analyzed above, the temperature of the thermistor material is known; therefore, the circuit structure and the parameters of the circuit components are known in the constant-temperature testing scenario. Therefore, based on the infrared detector circuit, the theoretically output electrical signal of the infrared detector in various constant-temperature testing scenarios can be determined. In this application, depending on the infrared detector, the output response signal can be a voltage signal or a current signal; for example... Figure 2a , Figure 2b In the example, the electrical signal output by the infrared detector is a voltage signal.

[0075] It is understandable that, given the known theoretical circuit parameters of the infrared detector, the theoretical ambient temperature of the constant-temperature test environment in which the infrared detector operates, and the theoretical target temperature of the object being measured, the theoretical response signal output by the infrared detector at different theoretical ambient temperatures and when measuring objects with different theoretical target temperatures can be directly calculated based on the known data. Based on the above analysis, it can be seen that the response signal output by the infrared detector is affected by the following variables:

[0076] The circuit parameters of the infrared detector, the ambient temperature of the environment in which the infrared detector is located, and the target temperature of the object measured by the infrared detector.

[0077] Based on this, a mapping relationship can be constructed between the response signal output by the infrared detector and the ambient temperature of each constant temperature test scenario, the target temperature of each heat source, and the circuit parameter information of the infrared detector, thereby determining the response signal model.

[0078] For example, assuming the response signal output by the infrared detector is ThVout, the circuit parameters of the infrared detector are ThP, the ambient temperature of the environment in which the infrared detector is located is ThET, and the target temperature of the object measured by the infrared detector is ThOT, then a function model can be constructed with ThP, ThET, and ThOT as independent variables and ThVout as the dependent variable, that is, ThVout = f(ThP, ThET, ThOT).

[0079] Without considering the difference between the actual circuit parameters and the rated circuit parameters, the actual measured response line shape should be the same as the theoretical response line shape. However, since the actual circuit parameters may not be equal to the rated circuit parameters, the actual measured response line shape should be different from the theoretical response line shape. Therefore, based on the difference between the actual measured response line shape and the theoretical response line shape, the actual circuit parameter information of the infrared detector in the real environment can be deduced.

[0080] Based on the above response signal model, which represents the mapping relationship between the response signal output by the infrared detector and the circuit parameters of the infrared detector, the ambient temperature of the infrared detector, and the target temperature of the object measured by the infrared detector, the response signal model contains four physical quantities. That is, if three of the four physical quantities are known, the remaining unknown physical quantity can be deduced. Based on this, when executing step S12, the circuit parameter information of the infrared detector under the current environment can be deduced based on the measured response signals obtained in step S11, the corresponding real ambient temperature, and the real target temperature.

[0081] Similarly, based on the circuit parameter information obtained in step S12, the actual circuit parameter information of the infrared detector at the current ambient temperature can be obtained, thereby obtaining the actual response signal model of the infrared detector. That is, when the actual circuit parameters and the ambient temperature of the infrared detector are known, the actual response signal model represents the mapping relationship between the response signal output by the infrared detector and the target temperature of the measured object.

[0082] Furthermore, during step S13, based on the actual response signal model, the correspondence between the response signal output by the infrared detector and the target temperature can be determined by controlling variables. This allows for the acquisition of calibration information for the infrared detector under different ambient temperatures. This calibration information is then used to calibrate the temperature output to the user, thereby providing the user with an accurate target temperature of the object being measured. This effectively improves the measurement accuracy of the infrared detector.

[0083] In one possible embodiment, when performing step S13, the calibration information of the infrared detector under different ambient temperatures can be determined by the following steps:

[0084] Substitute the actual circuit parameters represented by the circuit parameter information determined in S12 into the circuit parameters of the response signal model to obtain the mapping relationship between the response signal and the ambient temperature and the target temperature, which serves as calibration information.

[0085] In another possible embodiment, during step S13, a curve representing the theoretical response relationship can be fitted based on the theoretical response signals output by the infrared detector under different theoretical ambient temperatures; this is hereinafter referred to as the theoretical response curve. And a curve representing the actual response relationship can be fitted based on the measured response signals output by the infrared detector under different real ambient temperatures; this is hereinafter referred to as the measured response curve. Based on the offset between the theoretical response curve and the measured response curve, the difference in output response signals when the infrared detector operates at the target ambient temperature and the target temperature of the measured object is the same can be determined.

[0086] In another possible embodiment, when performing step S13, the calibration information can also be determined through the following steps:

[0087] Acquire a first design response signal output by the infrared detector when measuring the temperature of a first reference target object at a standard ambient temperature, and a second response signal output by the infrared detector when measuring the temperature of a second reference target object at a standard ambient temperature;

[0088] Based on the response signal model and circuit parameter information, determine the first reference response signal corresponding to the first reference target temperature and the second reference response signal corresponding to the second reference target temperature under the actual target temperature.

[0089] The ratio of the reference difference to the design difference is determined as the response temperature drift of the infrared detector at the target temperature, and is used as calibration information. The reference difference is the difference between the first reference response signal and the second reference response signal, and the design difference is the difference between the first design response signal and the second design response signal.

[0090] For example, suppose the temperature of the heat source in the first isothermal test scenario is P. TL1 In the second constant temperature test scenario, the temperature of the heat source is P. TL2 And record the target ambient temperature as env. temp As analyzed above, since the output response signal depends on the heat source temperature and the ambient temperature, the theoretical response signal obtained under the first isothermal test scenario can be denoted as Vout. standard (P TL1 env tempThe theoretical response signal obtained under the second isothermal test scenario is denoted as Vout. standard (P TL2 env temp Similarly, the measured response signal obtained under the first constant temperature test scenario is denoted as Vout. real (P TL1 env temp The measured response signal obtained under the second isothermal test scenario is denoted as Vout. real (P TL2 env temp In this example, the response temperature drift is calculated according to formula (1):

[0091]

[0092] Wherein, ΔV represents the temperature drift of the infrared detector operating at the target ambient temperature. Using this embodiment, only two isothermal test scenarios are needed to determine the temperature drift of the infrared detector operating at the target ambient temperature, making it more convenient due to the smaller number of required isothermal test scenarios.

[0093] Since the measured response signal can be obtained by setting the infrared detector in a constant-temperature test environment and measuring it, the following section will focus on explaining how to determine the theoretical response signal:

[0094] In one possible embodiment, the theoretical response signal can be predicted based on a prediction network pre-trained and constructed for the circuitry of the infrared detector.

[0095] In one possible embodiment, the response signal model in step S12 can be determined by determining the theoretical response signals output by multiple constant temperature test scenarios based on the mapping relationship between the constant temperature test scenario (ambient temperature in the constant temperature test scenario and target temperature of the heat source in the constant temperature test scenario) and the response signal, which is pre-constructed based on the circuit of the infrared detector.

[0096] Since the theoretical response signal model is established in advance, it can be used directly each time the predicted electrical signal is determined, effectively saving the amount of computation required to determine the theoretical response electrical signal, thereby improving the efficiency of response temperature drift calibration.

[0097] As analyzed above, the theoretical response signal depends on the heat source temperature, the ambient temperature, and the parameters of each circuit element in the circuit. Therefore, in one possible embodiment, the aforementioned theoretical response signal model can be as shown in formula (2):

[0098] Vout = F vout (Data, P_target, env) temp(2)

[0099] Where Vout is the electrical signal, Data is the parameter of each circuit element, P_target is the heat source temperature of the constant temperature test scenario, and env is the parameter of the circuit element. temp This refers to the ambient temperature of the constant temperature testing scenario. Since the circuit components differ in different application scenarios, their parameters also vary. For ease of description, the following text will use... Figure 2a Taking the example shown below, then as Figure 2a As shown, the circuit components include resistors, PMOS, and NMOS. Therefore, the parameters of the circuit components include: the resistance value, range, and temperature coefficient of the resistor; the threshold voltage of the PMOS and NMOS; and the access voltage of each connection point. Therefore, formula (2) can be modified into formula (3):

[0100] Vout = F vout (V_data, R_data, REG_data, Gain_data, TCR_data, P_target, env temp (3)

[0101] Wherein, V_data represents the voltage parameters in the parameters, such as Vsk, Veb, Veb1, Vref, the threshold voltage of PMOS, the threshold voltage of NMOS, etc.; R_data represents the resistance parameters in the parameters, such as Rd, Rdm, Rs, Rsm, Rsc, Rsmc, the bridge arm resistance Ti, etc.; REG_data represents the configuration parameters in the parameters, such as the resistance level setting; Gain_data represents the gain parameters in the parameters, such as the clock, integration time, integration capacitor, etc.; and TCR_data represents the resistance temperature coefficient in the parameters. V_data can be calculated using the following formula (4):

[0102]

[0103] Among them, V adc_ h represents the upper limit of the allowable output voltage of the automatic gain control circuit, V adc_l This represents the lower limit of the allowable output voltage for the automatic gain control circuit, and bitnum represents the number of bits of digital output the circuit supports. For example, assuming the current circuit supports 14 bits of digital output, then bitnum = 14.

[0104] Understandably, theoretically, all circuit components in an infrared detector are known, and therefore their rated parameters are also known. Thus, a response signal model can be constructed based on these rated parameters and circuit knowledge. However, due to various limitations, such as manufacturing and assembly processes, the rated parameters of the circuit components may differ from their actual parameters. Therefore, directly constructing a theoretical response signal model based solely on the rated parameters and circuit knowledge is not accurate enough.

[0105] Based on this, the mapping relationship between the response signal output by the infrared detector and the ambient temperature and the target temperature of the measured object can be generated according to the difference between the actual parameters and the rated parameters of the infrared detector, so as to obtain the response signal model. For example, for the convenience of description, the parameter difference is denoted as data_fluctuation. Then, as in the analysis of the response signal model above, the theoretical response signal model is as shown in formula (5):

[0106] Vout = F vout (V_data, R_data, REG_data, Gain_data, TCR_data, data_fluctuation, P_target,

[0107] env temp ,)…(5)

[0108] In formula (5), the parameters represented by V_data, R_data, REG_data, Gain_data, and TCR_data are the nominal parameters. Given the nominal parameters and the difference information, the actual parameters can be determined, and an accurate response signal model can be constructed based on the actual parameters and circuit knowledge. Since the nominal parameters are known, the subsequent construction of the response signal model only requires determining the difference information.

[0109] Based on this, in one possible embodiment, step S12 can also be implemented by the following steps:

[0110] S121. Based on the response signal model, each measured response signal, and the corresponding real ambient temperature, real target temperature, and rated circuit parameters of the infrared detector, determine the circuit parameter information of the infrared detector.

[0111] The response signal model represents the mapping relationship between each measured response signal and the corresponding real ambient temperature, real target temperature, and circuit parameter information. Given each measured response signal and its corresponding real ambient temperature, the circuit parameter information can be calculated by reverse deduction.

[0112] Under normal circumstances, during the normal operation of an infrared detector, the parameters of its internal components will only fluctuate within a certain range, and the circuit parameter information should not exceed this range. If the circuit parameter information exceeds the normal fluctuation range, it indicates that there is an abnormality in the components of the circuit. If the components in the circuit are not abnormal and can still work normally, and the obtained circuit parameter information is determined to be outside the normal fluctuation range, it indicates that the obtained circuit parameter information is inaccurate. For example, suppose the rated power of the infrared detector is 10W in its rated circuit parameters, but the actual power obtained in the determined circuit parameters is 100W, but the infrared detector can still work normally. In this case, it can be determined that the calculated circuit parameters have a large error and are inaccurate.

[0113] Since the actual ambient temperature, the actual target temperature, and the measured response signal all contain certain errors during the measurement process, the superposition of these errors will further amplify the error between the circuit parameter information calculated based on the response signal model and the actual circuit parameter information. Therefore, by using the rated circuit parameters of the infrared detector as a reference to verify the accuracy of the determined circuit parameter information in this embodiment, the influence of circuit parameter information with large errors on the calibration information determined in step S13 can be effectively reduced, thereby improving the accuracy of the determined calibration information of the infrared detector under different ambient temperatures.

[0114] As analyzed above, in one possible embodiment, a response signal model can be generated based on the response signal output by the infrared detector, the parameter difference between the actual and rated parameters of the infrared detector, the ambient temperature, and the target temperature of the object being measured. In this case, the response signal model represents the mapping relationship between the response signal output by the infrared detector, the rated circuit parameters of the infrared detector, the parameter difference between the rated circuit parameters and the actual circuit parameters, the actual ambient temperature of the infrared detector, and the target temperature of the object being measured by the infrared detector. Based on this response signal model, when performing step S121 above, the circuit parameter information can be determined through the following steps:

[0115] Based on the response signal model, each measured response signal, and the corresponding real ambient temperature, real target temperature, and rated circuit parameters of the infrared detector, the parameter differences are determined and used as circuit parameter information.

[0116] Based on the foregoing analysis, the response signal output by the infrared detector is affected by the following variables:

[0117] The circuit parameters of the infrared detector, the ambient temperature of the environment in which the infrared detector is located, and the target temperature of the object measured by the infrared detector.

[0118] Therefore, if the circuit parameters of the infrared detector can be determined through the rated circuit parameters of the infrared detector and the parameter differences between the rated circuit parameters and the actual circuit parameters, then a response signal model can be generated based on the mapping relationship between the response signal output by the infrared detector and the rated circuit parameters of the infrared detector, the parameter differences between the rated circuit parameters and the actual circuit parameters, the real ambient temperature of the infrared detector, and the target temperature of the object measured by the infrared detector. For example, a function model can be generated with the rated circuit parameters of the infrared detector, the parameter differences between the rated circuit parameters and the actual circuit parameters, the real ambient temperature of the infrared detector, and the target temperature of the object measured by the infrared detector as independent variables, and the response signal output by the infrared detector as the dependent variable. The generated function model is the response signal model.

[0119] As can be seen, there are a total of five variables in this response signal model. Knowing four of these variables allows us to calculate the remaining unknown variable. Based on this, the parameter differences can be determined using the response signal model, the measured response signals, and the corresponding real ambient temperature, real target temperature, and rated circuit parameters of the infrared detector. Then, based on these parameter differences and the rated circuit parameters, the actual circuit parameters of the infrared detector can be determined.

[0120] Therefore, in this embodiment, the difference between the actual and rated parameters of the component can be deduced by measuring the circuit state output by the component. This helps to verify the calculated actual circuit parameters in conjunction with the target parameter differences specified in the initial design of the infrared detector circuit, thereby ensuring the validity and accuracy of the determined actual circuit parameters.

[0121] For example, still using Figure 2a For example, assuming the response signal model is as shown in equation (6):

[0122]

[0123] Where G is the gain coefficient (related to voltage parameters, resistance parameters, configuration parameters, and gain parameters), R is the resistance parameter, and T is the gain coefficient. joule For Joule heating, T tar Let T be the temperature of the heat source, T be the temperature at which the target radiation reaches thermal equilibrium, and G be the temperature of the heat source. leg R is the bridge arm thermal conductivity (related to the composition of titanium (Ti), silicon nitride (SiN), etc.), ε is the Boltzmann constant, ε1 is the target emissivity, β is the radiative thermal conductivity parameter, calculated based on the actual absorption of the sensitive element and the substrate reflectivity. Ti Here is the resistance value of Ti, and offset is the bias value, which is related to the circuit voltage configuration.

[0124] When the parameter difference is the same as the target parameter difference, the response signal model between the output response signal of the infrared detector and the ambient temperature and the target temperature of the measured object can be used to obtain the mapping relationship between the response electrical signal and the real ambient temperature and the real target temperature. Since the response temperature drift is essentially the correspondence between the change in the response signal and the change in temperature, the change in the response electrical signal and the change in temperature can be determined based on the response signal model. Furthermore, based on the change in the response electrical signal and the change in temperature, the correspondence between the two can be determined, thus more accurately and simply determining the response temperature drift of the infrared detector.

[0125] In one possible embodiment, the response temperature drift of the infrared detector can be determined by measuring the ratio between the change in the response electrical signal and the change in temperature. In another possible embodiment, the response temperature drift of the infrared detector can be determined by measuring the slope of the linear equation formed by the change in the response electrical signal and the change in temperature. The method for determining the response temperature drift can be flexibly selected based on the ease of calculation, and this application does not impose specific limitations.

[0126] To more clearly illustrate the beneficial effects of the infrared detector response signal processing method provided in this application, in one possible embodiment, the response signal based on changes in ambient temperature is normalized to obtain a normalized temperature drift ratio, and then a linear response temperature drift is generated. For details, please refer to... Figure 3a , Figure 3b as well as Figure 3c Based on the response at low ambient temperatures (e.g., -40 degrees Celsius), the response temperature drift of the infrared detector at 60 degrees Celsius, determined by the infrared detector response signal processing method provided in this application, is 75.17%. However, the actual measured response temperature drift of the infrared detector at 60 degrees Celsius is 75.07%, with an error of approximately 0.1%. This demonstrates that the response temperature drift determined by the infrared detector response signal processing method provided in this application is relatively accurate.

[0127] In one possible embodiment, the calibration information obtained in step S13 can be burned into the infrared detector response unit so that the infrared detector can directly calibrate the actual measured temperature based on the internally stored calibration information.

[0128] In another possible embodiment, the response signal model can be programmed into the infrared detector response unit, and the infrared detector response unit can perform the above step S13 based on the programmed response signal model to obtain calibration information.

[0129] Corresponding to the aforementioned infrared detector response signal processing device, this application also provides an infrared detector response signal processing device, such as... Figure 4As shown, it includes:

[0130] The acquisition module 41 is used to acquire multiple measured response signals and the corresponding real ambient temperature and real target temperature for each measured response signal. The measured response signal is the response signal output when the infrared detector is at the real ambient temperature and the temperature of the measured object is the real target temperature.

[0131] The first determining module 42 is used to determine the circuit parameter information of the infrared detector based on the response signal model, each measured response signal, and the real ambient temperature and real target temperature corresponding to each measured response signal. The circuit parameter information is used to represent the actual circuit parameters of the infrared detector, and the response signal model is used to represent the mapping relationship between the response signal output by the infrared detector and the circuit parameters of the infrared detector, the ambient temperature where the infrared detector is located, and the target temperature of the object measured by the infrared detector.

[0132] The second determining module 43 is used to determine the calibration information of the infrared detector under different ambient temperatures based on the response signal model and circuit parameter information. The calibration information is used to represent the correspondence between the response signal output by the infrared detector and the target temperature.

[0133] In one possible embodiment, the first determining module 42 is further configured to determine the circuit parameter information of the infrared detector based on the response signal model, each measured response signal, and the actual ambient temperature, the actual target temperature, and the rated circuit parameters of the infrared detector corresponding to each measured response signal.

[0134] The response signal model is used to represent the mapping relationship between the response signal output by the infrared detector and the rated circuit parameters of the infrared detector, the parameter difference between the rated circuit parameters and the actual circuit parameters, the real ambient temperature of the infrared detector, and the target temperature of the object measured by the infrared detector.

[0135] The first determining module 42 is also used to determine the parameter differences based on the response signal model, each measured response signal, and the corresponding real ambient temperature, real target temperature, and rated circuit parameters of the infrared detector, as circuit parameter information.

[0136] In one possible embodiment, the second determining module 43 is further configured to input the actual circuit parameters represented by the circuit parameter information into the circuit parameters of the response signal model to obtain the mapping relationship between the response signal and the ambient temperature and the target temperature, as calibration information.

[0137] The second determining module 43 is also used to acquire the first design response signal output by the infrared detector when measuring the temperature of the first reference target object at a standard ambient temperature, and the second response signal output by the infrared detector when measuring the temperature of the second reference target object at a standard ambient temperature.

[0138] Based on the response signal model and circuit parameter information, determine the first reference response signal corresponding to the first reference target temperature and the second reference response signal corresponding to the second reference target temperature under the actual target temperature.

[0139] The ratio of the reference difference to the design difference is determined as the response temperature drift of the infrared detector at the target temperature, which serves as calibration information. The reference difference is the difference between the first reference response signal and the second reference response signal, and the design difference is the difference between the first design response signal and the second design response signal.

[0140] On the other hand, embodiments of this application also provide an electronic device, such as... Figure 5 As shown, it includes:

[0141] Memory 51 is used to store computer programs;

[0142] When processor 52 executes the program stored in memory 51, it performs the following steps:

[0143] Multiple measured response signals and their corresponding real ambient temperature and real target temperature are acquired. The measured response signal is the response signal output when the infrared detector is at the real ambient temperature and the measured object's temperature is the real target temperature.

[0144] Based on the response signal model, each measured response signal, and the corresponding real ambient temperature and real target temperature, the circuit parameter information of the infrared detector is determined.

[0145] Among them, the circuit parameter information is used to represent the actual circuit parameters of the infrared detector, and the response signal model is used to represent the mapping relationship between the response signal output by the infrared detector and the circuit parameters of the infrared detector, the ambient temperature of the infrared detector, and the target temperature of the object measured by the infrared detector.

[0146] Based on the response signal model and circuit parameter information, the calibration information of the infrared detector under different ambient temperatures is determined.

[0147] Furthermore, the aforementioned electronic device may also include a communication bus and / or a communication interface, with the processor 602, communication interface, and memory 601 communicating with each other via the communication bus.

[0148] The communication bus mentioned in the above electronic devices can be a Peripheral Component Interconnect (PCI) bus or an Extended Industry Standard Architecture (EISA) bus, etc. This communication bus can be divided into address bus, data bus, control bus, etc. For ease of illustration, only one thick line is used to represent it in the diagram, but this does not mean that there is only one bus or one type of bus.

[0149] The communication interface is used for communication between the aforementioned electronic devices and other devices.

[0150] The memory may include random access memory (RAM) or non-volatile memory (NVM), such as at least one disk storage device. Optionally, the memory may also be at least one storage device located remotely from the aforementioned processor.

[0151] The processors mentioned above can be general-purpose processors, including central processing units (CPUs), network processors (NPs), etc.; they can also be digital signal processors (DSPs), application-specific integrated circuits (ASICs), field-programmable gate arrays (FPGAs), or other programmable logic devices, discrete gate or transistor logic devices, or discrete hardware components.

[0152] In another embodiment provided in this application, a computer-readable storage medium is also provided, which stores a computer program that, when executed by a processor, implements the steps of any of the infrared detector response signal processing methods described above.

[0153] In another embodiment provided in this application, a computer program product containing instructions is also provided, which, when run on a computer, causes the computer to execute any of the infrared detector response signal processing methods described in the above embodiments.

[0154] In the above embodiments, implementation can be achieved entirely or partially through software, hardware, firmware, or any combination thereof. When implemented using software, it can be implemented entirely or partially in the form of a computer program product. The computer program product includes one or more computer instructions. When the computer program instructions are loaded and executed on a computer, all or part of the processes or functions described in the embodiments of this application are generated. The computer can be a general-purpose computer, a special-purpose computer, a computer network, or other programmable device. The computer instructions can be stored in a computer-readable storage medium or transmitted from one computer-readable storage medium to another. For example, the computer instructions can be transmitted from one website, computer, server, or data center to another website, computer, server, or data center via wired (e.g., coaxial cable, fiber optic, digital subscriber line (DSL)) or wireless (e.g., infrared, wireless, microwave, etc.) means. The computer-readable storage medium can be any available medium that a computer can access or a data storage device such as a server or data center that integrates one or more available media. The available medium can be a magnetic medium (e.g., floppy disk, hard disk, magnetic tape), an optical medium (e.g., DVD), or other media (e.g., solid state disk (SSD)).

[0155] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0156] The various embodiments in this specification are described in a related manner. Similar or identical parts between embodiments can be referred to mutually. Each embodiment focuses on describing the differences from other embodiments. In particular, the system embodiments are basically similar to the method embodiments, so the description is relatively simple; relevant parts can be referred to the descriptions of the method embodiments.

[0157] The above description is merely a preferred embodiment of this application and is not intended to limit the scope of protection of this application. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application are included within the scope of protection of this application.

Claims

1. A method for processing the response signal of an infrared detector, characterized in that, The method includes: Acquire multiple measured response signals and the corresponding real ambient temperature and real target temperature for each measured response signal, wherein the measured response signal is the response signal output when the infrared detector is at the real ambient temperature and the temperature of the measured object is the real target temperature; Based on the response signal model, each of the measured response signals, and the corresponding real ambient temperature and real target temperature, the circuit parameter information of the infrared detector is determined. The circuit parameter information is used to represent the actual circuit parameters of the infrared detector, and the response signal model is used to represent the mapping relationship between the response signal output by the infrared detector and the circuit parameters of the infrared detector, the ambient temperature of the infrared detector, and the target temperature of the object measured by the infrared detector. Based on the response signal model and the circuit parameter information, the calibration information of the infrared detector under different ambient temperatures is determined. The calibration information is used to represent the correspondence between the response signal output by the infrared detector and the target temperature.

2. The method according to claim 1, characterized in that, The step of determining the circuit parameter information of the infrared detector based on the response signal model, each of the measured response signals, and the corresponding real ambient temperature and real target temperature includes: Based on the response signal model, each of the measured response signals, and the corresponding real ambient temperature, real target temperature, and rated circuit parameters of the infrared detector, the circuit parameter information of the infrared detector is determined.

3. The method according to claim 2, characterized in that, The response signal model is used to represent the mapping relationship between the response signal output by the infrared detector and the rated circuit parameters of the infrared detector, the parameter difference between the rated circuit parameters and the actual circuit parameters, the real ambient temperature of the infrared detector, and the target temperature of the object measured by the infrared detector. The step of determining the circuit parameter information of the infrared detector based on the response signal model, each of the measured response signals, and the corresponding real ambient temperature, real target temperature, and rated circuit parameters of the infrared detector includes: Based on the response signal model, each of the measured response signals, and the corresponding real ambient temperature, real target temperature, and rated circuit parameters of the infrared detector, the parameter differences are determined and used as circuit parameter information.

4. The method according to claim 1, characterized in that, The step of determining the calibration information of the infrared detector under different ambient temperatures based on the response signal model and the circuit parameter information includes: The actual circuit parameters represented by the circuit parameter information are substituted into the circuit parameters of the response signal model to obtain the mapping relationship between the response signal and the ambient temperature and the target temperature, which is used as calibration information.

5. The method according to claim 1, characterized in that, The step of determining the calibration information of the infrared detector under different ambient temperatures based on the response signal model and the circuit parameter information includes: Acquire a first design response signal output by the infrared detector when measuring the temperature of a first reference target object at a standard ambient temperature, and a second response signal output by the infrared detector when measuring the temperature of a second reference target object at the same standard ambient temperature; Based on the response signal model and the circuit parameter information, determine the first reference response signal corresponding to the first reference target temperature and the second reference response signal corresponding to the second reference target temperature under the actual target temperature; The ratio of the reference difference to the design difference is determined as the response temperature drift of the infrared detector at the target temperature, serving as calibration information. The reference difference is the difference between the first reference response signal and the second reference response signal, and the design difference is the difference between the first design response signal and the second design response signal.

6. An infrared detector response signal processing device, characterized in that, The device includes: The acquisition module is used to acquire multiple measured response signals and the real ambient temperature and real target temperature corresponding to each measured response signal. The measured response signal is the response signal output when the infrared detector is at the real ambient temperature and the temperature of the measured object is the real target temperature. The first determining module is used to determine the circuit parameter information of the infrared detector based on the response signal model, each of the measured response signals, and the real ambient temperature and real target temperature corresponding to each of the measured response signals. The circuit parameter information is used to represent the actual circuit parameters of the infrared detector, and the response signal model is used to represent the mapping relationship between the response signal output by the infrared detector and the circuit parameters of the infrared detector, the ambient temperature where the infrared detector is located, and the target temperature of the object measured by the infrared detector. The second determining module is used to determine the calibration information of the infrared detector under different ambient temperatures based on the response signal model and the circuit parameter information. The calibration information is used to represent the correspondence between the response signal output by the infrared detector and the target temperature.

7. The apparatus according to claim 6, characterized in that, The first determining module is further configured to determine the circuit parameter information of the infrared detector based on the response signal model, each of the measured response signals, and the actual ambient temperature, actual target temperature, and rated circuit parameters of the infrared detector corresponding to each of the measured response signals. The response signal model is used to represent the mapping relationship between the response signal output by the infrared detector and the rated circuit parameters of the infrared detector, the parameter difference between the rated circuit parameters and the actual circuit parameters, the real ambient temperature of the infrared detector, and the target temperature of the object measured by the infrared detector. The first determining module is further configured to determine the parameter differences based on the response signal model, each of the measured response signals, and the actual ambient temperature, actual target temperature, and rated circuit parameters of the infrared detector corresponding to each of the measured response signals, as circuit parameter information.

8. The apparatus according to claim 6, characterized in that, The second determining module is further configured to input the actual circuit parameters represented by the circuit parameter information into the circuit parameters of the response signal model to obtain the mapping relationship between the response signal and the ambient temperature and the target temperature, as calibration information; The second determining module is further configured to acquire a first design response signal output by the infrared detector when measuring the temperature of a first reference target object at a standard ambient temperature, and a second response signal output by the infrared detector when measuring the temperature of a second reference target object at the standard ambient temperature; Based on the response signal model and the circuit parameter information, determine the first reference response signal corresponding to the first reference target temperature and the second reference response signal corresponding to the second reference target temperature under the actual target temperature; The ratio of the reference difference to the design difference is determined as the response temperature drift of the infrared detector at the target temperature, serving as calibration information. The reference difference is the difference between the first reference response signal and the second reference response signal, and the design difference is the difference between the first design response signal and the second design response signal.

9. An electronic device, characterized in that, include: Memory, used to store computer programs; A processor, when executing a program stored in memory, implements the method described in any one of claims 1-5.

10. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores a computer program that, when executed by a processor, implements the method described in any one of claims 1-5.

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