Metal oxide thin film transistor, preparation method thereof and display panel

By using an inorganic insulating layer with a high oxygen content to contact the metal oxide semiconductor layer in the thin-film transistor, the problem of poor stability of the thin-film transistor is solved, and higher stability and reliability are achieved.

CN115732571BActive Publication Date: 2026-06-26FUZHOU BOE OPTOELECTRONICS TECH CO LTD +1
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Patent Information

Application Number
CN202111016209.3
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2021-08-31
Publication Date
2026-06-26
Estimated Expiration
2041-08-31

AI Technical Summary

Technical Problem

In the prior art, the semiconductor layer of indium gallium zinc oxide thin-film transistors has a low oxygen content, resulting in poor stability of the thin-film transistors.

Method used

An inorganic insulating layer with an oxygen atom content greater than 50% is used as the first insulating layer, which is in contact with the metal oxide semiconductor layer. An oxygen-rich silicon oxide film layer is formed by controlling the deposition process to supplement the oxygen content of the metal oxide semiconductor layer and reduce surface defects.

Benefits of technology

This improves the stability of metal oxide thin-film transistors, reduces product defects caused by negative bias, and enhances device reliability.

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Abstract

The application discloses a metal oxide thin film transistor and a preparation method thereof and a display panel, and relates to the technical field of display. The first insulating layer of the metal oxide thin film transistor has a high oxygen content, so that oxygen elements in the first insulating layer can diffuse to the metal oxide semiconductor layer, the metal oxide semiconductor layer is supplemented with oxygen, and the stability of the metal oxide thin film transistor is improved. In addition, the interface matching between the first insulating layer and the metal oxide semiconductor layer can reduce the surface defects of the metal oxide semiconductor layer. Meanwhile, the percentage of the number of oxygen atoms in the metal oxide semiconductor layer is greater than 45%, so that the oxygen vacancies in the metal oxide semiconductor layer are not too many, the characteristics of the metal oxide thin film transistor are not easily negatively biased during device operation, and the product sand point defect caused by the negative bias of the characteristics of the metal oxide thin film transistor can be effectively reduced.
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Citation Information

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