Light emitting device and method for manufacturing light emitting device

Abstract

The application discloses a light-emitting device and a preparation method thereof. The light-emitting device comprises: a surface of a substrate comprising at least one light-emitting area; at least one light-emitting unit located on the surface of the backlight side of the substrate and corresponding to the light-emitting area one by one, the light-emitting unit comprising a stack of a first electrode, a light-emitting device layer and a second electrode, the first electrode being in contact with the substrate; at least one conductive column corresponding to the edge of the light-emitting area, the conductive column being connected with the first electrode, the conductive column extending from the light-emitting side to the backlight side; and at least one first electrode metal lead, the first electrode metal lead being located on the side of the second electrode away from the substrate, the conductive column and the first electrode metal lead being connected with each other one by one, and the first electrode metal lead being connected with the external bonding area of the screen body via the light-emitting area. The technical scheme provided by the embodiment of the application increases the setting space of the first electrode metal lead and avoids the problem of too narrow line width of the first electrode metal lead.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and in particular to a light-emitting device and a method for manufacturing the light-emitting device. Background Technology

[0002] Due to their surface light source characteristics, OLED devices are increasingly widely used in lighting and automotive applications. To improve their interaction, existing light-emitting devices typically have multiple light-emitting areas, each including a light-emitting unit. Each light-emitting unit comprises a stack of a first electrode, a light-emitting device layer, and a second electrode. The first electrode of each light-emitting unit needs to be electrically connected to an external bonding area of ​​the screen via a first electrode metal lead.

[0003] Figure 1 This is a top view of a light-emitting device provided by existing technology. See also Figure 1 In the prior art, the first electrode of each light-emitting unit is connected to the first electrode metal lead 02 at the edge of the light-emitting area 01, and then the first electrode metal lead 02 is electrically connected to the bonding area outside the screen through the interval area between the light-emitting areas 01.

[0004] The existing technology has the following technical defects: the first electrode metal lead 02 is located in the lead area, which is situated between the light-emitting areas 01. Since the lead area does not emit light, its area is relatively small to increase the aperture ratio of the light-emitting device. This results in the first electrode metal lead 02 being generally very narrow. Consequently, the resistance of the first electrode metal lead 02 in the light-emitting area 01, which is far from the external bonding area of ​​the screen, is very high, causing the voltage of the first electrode metal lead 02 in the light-emitting area 01 to rise. Moreover, the area of ​​the anti-static weak region near the external bonding area of ​​the screen edge where the narrow first electrode metal lead 02 is too small, resulting in an excessively low equivalent capacitance between the first electrode metal lead 02 and other conductive film layers in this region. This makes it extremely susceptible to breakdown during electrostatic discharge, causing short circuits or open circuits in the lead. Summary of the Invention

[0005] The present invention provides a light-emitting device and a method for manufacturing the light-emitting device, thereby increasing the setting space of the first electrode metal lead and avoiding the problem of the first electrode metal lead being too narrow.

[0006] This invention provides a light-emitting device, which includes a light-emitting side and a backlight side, and includes: a substrate, the surface of which includes at least one light-emitting area;

[0007] At least one light-emitting unit is located on the surface of the substrate on the backlight side and is located one-to-one with the light-emitting area. The light-emitting unit includes a stack of a first electrode, a light-emitting device layer and a second electrode, and the first electrode is in contact with the substrate.

[0008] At least one conductive post is provided, each of which is located at the edge of the light-emitting area. The conductive post is connected to the first electrode and extends from the light-emitting side to the backlight side.

[0009] At least one first electrode metal lead is located on the side of the second electrode away from the substrate. The conductive pillars are electrically connected to the first electrode metal leads one by one. The first electrode metal leads are electrically connected to the external bonding area of ​​the screen through the light-emitting area.

[0010] The first electrode metal lead is insulated from the second electrode, the conductive post is insulated from the second electrode, and the electrodes of different light-emitting units are insulated from each other.

[0011] Optionally, the conductive post is located on the portion of the first electrode's surface away from the substrate.

[0012] Optionally, it also includes a conductive post insulating wrapping layer and a second electrode insulating spacer layer;

[0013] The insulating wrapping layer of the conductive column is positioned higher than the second electrode, and the insulating wrapping layer of the conductive column surrounds part of the side surface of the conductive column.

[0014] The stack of the light-emitting device layer and the second electrode covers at least a portion of the orthogonal projection of the first electrode onto the substrate.

[0015] The second electrode insulating spacer is located between the second electrode and the first electrode metal lead trace. The second electrode insulating spacer is set higher than or equal to the conductive post insulating wrapping layer. The conductive post is set higher than the second electrode insulating spacer. The first electrode metal lead trace is in electrical contact with at least the side of the conductive post that is higher than the second electrode insulating spacer.

[0016] Optionally, the stack of the light-emitting device layer and the second electrode covers the orthogonal projection of the first electrode onto the substrate.

[0017] The orthographic projection of the second electrode insulating spacer layer onto the substrate at least covers the orthographic projection of the second electrode and the conductive pillar insulating wrapping layer onto the substrate;

[0018] The second electrode insulating spacer layer and the conductive pillar do not overlap in their orthographic projections onto the substrate;

[0019] The conductive post is in electrical contact with the surface of the substrate away from the first electrode metal lead, and the first electrode metal lead is in electrical contact with the side of the conductive post above the second electrode insulating spacer.

[0020] Optionally, the projection of the stack of the light-emitting device layer and the second electrode onto the substrate covers the projection of the first electrode onto the substrate.

[0021] The orthographic projection of the second electrode insulating spacer layer onto the substrate at least covers the orthographic projection of the second electrode onto the substrate;

[0022] The vertical cross-sectional shape of the portion of the conductive pillar above the light-emitting device layer is an inverted trapezoid.

[0023] The first electrode metal lead is in electrical contact with the side of the conductive post that is higher than the insulating spacer layer of the second electrode.

[0024] Optionally, the projection of the stack of the light-emitting device layer and the second electrode onto the substrate covers the projection of the first electrode onto the substrate.

[0025] The orthographic projection of the second electrode insulating spacer layer onto the substrate at least covers the orthographic projection of the second electrode onto the substrate;

[0026] The vertical cross-sectional shape of the conductive column is an inverted trapezoid;

[0027] The first electrode metal lead is in electrical contact with the side of the conductive post that is higher than the insulating spacer layer of the second electrode.

[0028] Optionally, the distance between the first electrode metal lead and the bonding area outside the screen is proportional to the width of the first electrode metal lead.

[0029] This invention also provides a method for fabricating a light-emitting device, the light-emitting device comprising a light-emitting side and a backlight side, including:

[0030] A substrate is provided, the surface of which includes at least one light-emitting region;

[0031] At least one first electrode and at least one conductive post are formed on the surface of the substrate on the backlight side. The first electrode is located in the light-emitting area, and the conductive post is located at the edge of the light-emitting area. The conductive post is connected to the first electrode and extends from the light-emitting side to the backlight side.

[0032] A light-emitting device layer and a second electrode are sequentially formed on the surface of the first electrode away from the substrate, and the first electrode, the light-emitting device layer and the second electrode constitute a light-emitting unit;

[0033] At least one first electrode metal lead is formed on the side of the second electrode away from the substrate. The conductive pillar is electrically connected to the first electrode metal lead in a one-to-one correspondence. The first electrode metal lead is electrically connected to the external bonding area of ​​the screen through the light-emitting area.

[0034] The first electrode metal lead is insulated from the second electrode, the conductive post is insulated from the second electrode, and the electrodes of different light-emitting units are insulated from each other.

[0035] Optionally, when forming at least one first electrode and at least one conductive post on the surface of the substrate located on the backlight side, the method further includes:

[0036] An insulating wrapping layer for the conductive column is formed on a portion of the side surface of the conductive column.

[0037] The stack of a light-emitting device layer and a second electrode sequentially formed on the surface of the first electrode away from the substrate includes:

[0038] A light-emitting device layer and a stack of the second electrode are sequentially formed on the side of the first electrode away from the substrate, and the orthogonal projection of the light-emitting device layer and the second electrode onto the substrate covers at least a portion of the orthogonal projection of the first electrode onto the substrate.

[0039] After the light-emitting device layer and the second electrode are sequentially formed on the surface of the first electrode away from the substrate, the process further includes:

[0040] A second electrode insulating spacer layer is formed on the side of the second electrode away from the substrate. The second electrode insulating spacer layer is located between the second electrode and the first electrode metal lead trace. The second electrode insulating spacer layer is higher than or equal to the conductive pillar insulating wrapping layer. The conductive pillar is higher than the second electrode insulating spacer layer. The conductive pillar insulating wrapping layer is higher than the second electrode. The first electrode metal lead trace is in electrical contact with at least the side of the conductive pillar that is higher than the second electrode insulating spacer layer.

[0041] Optionally, forming a stack of a light-emitting device layer and a second electrode sequentially on the surface of the first electrode away from the substrate includes:

[0042] A light-emitting device layer and a stack of the second electrode are sequentially formed on the side of the first electrode away from the substrate using a patterned film deposition method. The stack of the light-emitting device layer and the second electrode covers the orthogonal projection of the first electrode onto the substrate.

[0043] After the light-emitting device layer and the second electrode are sequentially formed on the surface of the first electrode away from the substrate, the process further includes:

[0044] A second electrode insulating spacer layer is formed on the side of the second electrode away from the substrate using a patterned film deposition method. The orthographic projection of the second electrode insulating spacer layer onto the substrate at least covers the orthographic projections of the second electrode and the conductive pillar insulating wrapping layer onto the substrate. The orthographic projections of the second electrode insulating spacer layer and the conductive pillar onto the substrate do not overlap.

[0045] Wherein, the conductive pillar is in electrical contact with the surface of the substrate away from the first electrode metal lead, and the first electrode metal lead is in electrical contact with the side of the conductive pillar above the second electrode insulating spacer layer;

[0046] The patterned film formation method includes laser printing or masking and other patterned film formation methods;

[0047] or,

[0048] The stack of a light-emitting device layer and a second electrode sequentially formed on the surface of the first electrode away from the substrate includes:

[0049] A light-emitting device layer and a stack of the second electrode are sequentially formed on the side of the first electrode away from the substrate using a whole-surface film forming method. The orthogonal projection of the light-emitting device layer and the second electrode onto the substrate covers the orthogonal projection of the first electrode onto the substrate.

[0050] After the light-emitting device layer and the second electrode are sequentially formed on the surface of the first electrode away from the substrate, the process further includes:

[0051] A second electrode insulating spacer layer is formed on the side of the second electrode away from the substrate by a whole-surface film forming method, wherein the orthogonal projection of the second electrode on the substrate at least covers the orthogonal projection of the second electrode on the substrate.

[0052] The vertical cross-sectional shape of the portion of the conductive pillar above the light-emitting device layer is an inverted trapezoid; the first electrode metal lead is in electrical contact with the side of the conductive pillar above the second electrode insulating spacer layer.

[0053] In the technical solution provided in this embodiment, the conductive posts are located one-to-one at the edge of the light-emitting area. The first electrode metal lead is electrically connected to the bonding area outside the screen via the light-emitting area. The first electrode metal lead does not occupy the area between the light-emitting areas. The first electrode metal lead is located in the light-emitting area, thereby increasing the installation space of the first electrode metal lead and avoiding the problem of the first electrode metal lead being too narrow. On the one hand, it reduces the resistance of the first electrode metal lead, avoiding the problem of the first electrode metal lead in the light-emitting area far from the bonding area outside the screen having a high resistance, causing the voltage of the first electrode metal lead in the light-emitting area to rise. On the other hand, it increases the area of ​​the first electrode metal lead, avoiding the problem of the first electrode metal lead being too narrow at the edge of the screen near the bonding area outside the screen having too small an area, resulting in the first electrode metal lead and other conductive film layers in this area having too low an equivalent capacitance, making it very easy to be broken down by the electrostatic discharge process, causing the lead to short circuit or open circuit.

[0054] It should be understood that the description in this section is not intended to identify key or essential features of the embodiments of the present invention, nor is it intended to limit the scope of the invention. Other features of the invention will become readily apparent from the following description. Attached Figure Description

[0055] To more clearly illustrate the technical solutions in the embodiments of the present invention, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0056] Figure 1 This is a top view of a light-emitting device provided by existing technology;

[0057] Figure 2 This is a top view of the backlight side of a light-emitting device according to an embodiment of the present invention;

[0058] Figure 3 yes Figure 2 A schematic diagram of the first type of cross-sectional structure along the A1-A2 direction;

[0059] Figure 4 yes Figure 2 A schematic diagram of the second type of cross-sectional structure along the A1-A2 direction;

[0060] Figure 5 yes Figure 4 Enlarged view of the area within the dashed box;

[0061] Figure 6 yes Figure 2 Schematic diagram of the third cross-sectional structure along the A1-A2 direction;

[0062] Figure 7 This is a schematic flowchart of a method for preparing a light-emitting device according to an embodiment of the present invention;

[0063] Figures 8-10 This is a flowchart showing the steps of a method for preparing a light-emitting device according to an embodiment of the present invention;

[0064] Figure 11 This is a schematic diagram of the structure of a light-emitting device according to an embodiment of the present invention;

[0065] Figure 12 This is a schematic diagram of another light-emitting device provided according to an embodiment of the present invention; Detailed Implementation

[0066] To enable those skilled in the art to better understand the present invention, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort should fall within the scope of protection of the present invention.

[0067] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this invention are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of the invention described herein can be implemented in orders other than those illustrated or described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover a non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0068] To increase the space for the first electrode metal lead and avoid the problem of the first electrode metal lead being too narrow, the embodiments of the present invention provide the following technical solution:

[0069] See Figure 2 and 3 , Figure 2 This is a top view of the backlight side of a light-emitting device according to an embodiment of the present invention. Figure 3 yes Figure 2A schematic diagram of a first cross-sectional structure along the A1-A2 direction shows a light-emitting device including a light-emitting side S1 and a backlight side S2. The light-emitting device includes: a substrate 1, the surface of which includes at least one light-emitting region 01; at least one light-emitting unit 2, located on the surface of the substrate 1 where the backlight side S2 is located, and corresponding to a light-emitting region 01; each light-emitting unit 2 includes a stack of a first electrode 20, a light-emitting device layer 21, and a second electrode 22, with the first electrode 20 in contact with the substrate 1; at least one conductive post 3, located corresponding to the edge of the light-emitting region 01, connected to the first electrode 20, and extending from the light-emitting side S1 to the backlight side S2; and at least one first electrode metal lead 02, located on the side of the second electrode 22 away from the substrate 1, electrically connected to the first electrode metal lead 02, and electrically connected to an external bonding area of ​​the screen via the light-emitting region 01. The first electrode metal lead 02 is insulated from the second electrode 22, the conductive post 3 is insulated from the second electrode 22, and the electrodes of different light-emitting units 2 are insulated from each other.

[0070] It should be noted that, in Figure 2 In the middle, the first electrode metal lead 02 covers the conductive post 3, but in order to... Figure 2 The location of the conductive pillar 3 is shown in the figure. The film covering the conductive pillar 3 has been removed to expose the conductive pillar 3.

[0071] In this embodiment, the first electrode 20 of the light-emitting unit 2 in each light-emitting area 01 is connected to the conductive post 3. The conductive post 3 extends from the light-emitting side S1 to the backlight side S2. The conductive post 3 is connected to the first electrode metal lead 02 in a one-to-one correspondence, so that the conductive post 3 can lead the electrical signal of the first electrode 20 of the light-emitting unit 2 to the bonding area outside the screen through the first electrode metal lead 02.

[0072] Understandably, the insulation between the first electrode metal lead 02 and the second electrode 22, and the insulation between the conductive post 3 and the second electrode 22, can prevent a short circuit between the first electrode metal lead 02 and the second electrode 22, and thus prevent a short circuit between the first electrode 20 and the second electrode 22. The insulation of the electrodes of different light-emitting units 2 can prevent short circuits between the electrodes of different light-emitting units 2.

[0073] In the technical solution provided in this embodiment, the conductive posts 3 are located one-to-one at the edge of the light-emitting area 01. The first electrode metal lead 02 is electrically connected to the bonding area outside the screen through the light-emitting area 01. The first electrode metal lead 02 does not occupy the area between the light-emitting areas 01. The first electrode metal lead 02 is located in the light-emitting area 01, thereby increasing the setting space of the first electrode metal lead 02 and avoiding the problem of the first electrode metal lead 02 being too narrow. On the one hand, it reduces the resistance of the first electrode metal lead 02, avoiding the problem of the first electrode metal lead 02 in the light-emitting area 01, which is far from the bonding area outside the screen, having a high resistance and causing the voltage of the first electrode metal lead 02 in the light-emitting area 01 to rise. On the other hand, it increases the area of ​​the first electrode metal lead 02, avoiding the problem of the first electrode metal lead 02 being too narrow at the edge of the screen near the bonding area outside the screen, where the anti-static weak area is too small, resulting in the equivalent capacitance of the first electrode metal lead 02 and other conductive film layers in this area being too low, making it easy to be broken down by the electrostatic discharge process, causing the lead to short circuit or open circuit.

[0074] Optionally, based on the above technical solution, the conductive post 3 is located on the part of the surface of the first electrode 20 away from the substrate 1, so that the conductive post 3 and the first electrode 20 are electrically connected.

[0075] Optionally, based on the above technical solutions, such as Figure 3 and Figure 4 As shown, the light-emitting device further includes a conductive pillar insulating wrapping layer 4 and a second electrode insulating spacer layer 5; the conductive pillar insulating wrapping layer 4 is positioned higher than the second electrode 22, and the conductive pillar insulating wrapping layer 4 surrounds a portion of the side surface of the conductive pillar 3; the stack of the light-emitting device layer 21 and the second electrode 22, in the orthographic projection onto the substrate 1, covers at least a portion of the orthographic projection of the first electrode 20 onto the substrate 1 (wherein, Figure 3 The stack of the light-emitting device layer 21 and the second electrode 22 covers the portion of the first electrode 20 in the orthogonal projection of the substrate 1. Figure 4 In the above, the stack of the light-emitting device layer 21 and the second electrode 22 covers the entire orthographic projection of the first electrode 20 on the substrate 1. The second electrode insulating spacer layer 5 is located between the second electrode 22 and the first electrode metal lead 02. The second electrode insulating spacer layer 5 is higher than or equal to the conductive pillar insulating wrapping layer 4. The conductive pillar 3 is higher than the second electrode insulating spacer layer 5. The first electrode metal lead 02 is in electrical contact with at least the side of the conductive pillar 3 above the second electrode insulating spacer layer 5. Figure 3 In the middle, the first electrode metal lead 02 is in electrical contact with the side of the conductive post 3 that is higher than the insulating spacer layer 5 of the second electrode and the surface of the conductive post 3 that is away from the substrate 1. Figure 4 In the middle, the first electrode metal lead 02 is in electrical contact with the side of the conductive post 3 that is higher than the insulating spacer layer 5 of the second electrode.

[0076] It should be noted that, in addition to the conductive pillar insulating layer 4 used for electrode insulation, a pixel limiting layer (not shown in the figure) is also provided between different light-emitting units 2. The pixel limiting layer is made of insulating material, and its opening structure defines the space occupied by the light-emitting unit 2. The height of the pixel limiting layer is lower than the height of the conductive pillar insulating layer 4.

[0077] For example, the second electrode insulating spacer layer 5 is greater than or equal to the conductive pillar insulating wrapping layer 4 by more than 100 nanometers. The conductive pillar 3 is greater than 100 nanometers greater than the second electrode insulating spacer layer 5. The thickness of the conductive pillar 3 is approximately between 300 nanometers and 5 micrometers.

[0078] Specifically, the conductive pillar insulating wrapping layer 4 is located between two adjacent first electrodes 20 and is positioned higher than the second electrode 22 to insulate the electrodes of different light-emitting units 2.

[0079] The second electrode insulating spacer layer 5 is used to insulate the second electrode 22 and the first electrode metal lead 02. The first electrode metal lead 02 makes electrical contact with the side of the conductive post 3 above the second electrode insulating spacer layer 5, thereby achieving electrical connection between the first electrode metal lead 02 and the conductive post 3, and ultimately achieving electrical connection between the first electrode metal lead 02 and the first electrode 20. The insulating capability of the second electrode insulating spacer layer 5 can be adjusted by setting its dielectric constant. For example, the second electrode insulating spacer layer 5 can be made of an insulating material with a relative dielectric constant greater than 3.5. Furthermore, the second electrode 22 and the first electrode metal lead 02 are insulated by the second electrode insulating spacer layer 5. Since the first electrode metal lead 02 is located in the light-emitting area 01, its line width can be made relatively wide, reducing the resistance of the first electrode metal lead 02. This avoids the situation where the anti-static weak area of ​​the first electrode metal lead 02 near the outer bonding area of ​​the screen edge is too small, resulting in an excessively low equivalent capacitance between the first electrode metal lead 02 and other conductive film layers in this area, making it extremely susceptible to breakdown during electrostatic discharge, causing short circuits or open circuits in the lead. Moreover, by selecting an insulating layer material with a high dielectric constant, the anti-static capability of the device is further improved.

[0080] Optionally, based on the above technical solutions, such as Figure 3As shown, the stacked light-emitting device layer 21 and the second electrode 22, when projected onto the substrate 1, cover the projection of the first electrode 20 onto the substrate 1. The projection of the second electrode insulating spacer layer 5 onto the substrate 1 at least covers the projections of the second electrode 22 and the conductive pillar insulating wrapping layer 4 onto the substrate 1. The projections of the second electrode insulating spacer layer 5 and the conductive pillar 3 onto the substrate 1 do not overlap. The conductive pillar 3 is in electrical contact with the first electrode metal lead 02 on the surface away from the substrate 1, and the first electrode metal lead 02 is in electrical contact with the side of the conductive pillar 3 above the second electrode insulating spacer layer 5. It should be noted that, except for not covering the projection of the conductive pillar 3 onto the substrate 1, the projection area of ​​the second electrode insulating spacer layer 5 onto the substrate 1 can be increased to cover the entire substrate 1.

[0081] Specifically, in this embodiment, there is no need to limit the cross-sectional shape of the conductive pillar 3, thereby reducing the difficulty of fabricating the conductive pillar 3. Furthermore, the stack of the light-emitting device layer 21 and the second electrode 22 only covers the first electrode 20, eliminating the need to fabricate the first electrode metal lead 02 too thickly, thus reducing the thickness of the light-emitting device.

[0082] Optionally, based on the above technical solutions, such as Figure 4 and Figure 5 As shown, the orthographic projection of the stack of the light-emitting device layer 21 and the second electrode 22 onto the substrate 1 covers the orthographic projection of the first electrode 20 onto the substrate 1; the orthographic projection of the second electrode insulating spacer layer 5 onto the substrate 1 at least covers the orthographic projection of the second electrode 22 onto the substrate 1. It should be noted that the orthographic projection of the second electrode insulating spacer layer 5 onto the substrate 1 is generally larger than the area of ​​the orthographic projection of the second electrode 22 onto the substrate 1, and the area of ​​the orthographic projection of the second electrode insulating spacer layer 5 onto the substrate 1 can be equal to the area of ​​the entire substrate 1; the vertical cross-sectional shape of the portion of the conductive pillar 3 above the light-emitting device layer 21 is an inverted trapezoid; the first electrode metal lead 02 is in electrical contact with the side of the conductive pillar 3 above the second electrode insulating spacer layer 5.

[0083] Specifically, the vertical cross-sectional shape of the portion of the conductive pillar 3 above the light-emitting device layer 21 is an inverted trapezoid. During the formation of the second electrode 22 and the second electrode insulating spacer layer 5, the formation of the second electrode 22 on the side of the portion of the conductive pillar 3 above the light-emitting device layer 21 can be avoided. This ensures that there is no conductive layer on the side of the portion of the conductive pillar 3 above the light-emitting device layer 21, thus avoiding the short circuit problem between the first electrode metal lead 02 and the second electrode 22.

[0084] Optionally, based on the above technical solutions, such as Figure 6As shown, the orthographic projection of the stack of the light-emitting device layer 21 and the second electrode 22 onto the substrate 1 covers the orthographic projection of the first electrode 20 onto the substrate 1; the orthographic projection of the second electrode insulating spacer layer 5 onto the substrate 1 at least covers the orthographic projection of the second electrode 22 onto the substrate 1. It should be noted that the orthographic projection of the second electrode insulating spacer layer 5 onto the substrate 1 is generally larger than the area of ​​the orthographic projection of the second electrode 22 onto the substrate 1, and the area of ​​the orthographic projection of the second electrode insulating spacer layer 5 onto the substrate 1 can be equal to the area of ​​the entire substrate 1; the vertical cross-sectional shape of the conductive pillar 3 is an inverted trapezoid; the first electrode metal lead 02 is in electrical contact with the side of the conductive pillar 3 above the second electrode insulating spacer layer 5.

[0085] Specifically, the cross-sectional shape of the conductive pillar 3 is an inverted trapezoid. Compared with the part of the conductive pillar 3 above the light-emitting device layer 21, the cross-sectional shape of the conductive pillar 3 is an inverted trapezoid, which reduces the difficulty of forming the conductive pillar 3.

[0086] Optionally, based on the above technical solutions, such as Figure 2 As shown, the distance between the first electrode metal lead 02 and the bonding area outside the screen is proportional to the width of the first electrode metal lead 02, so that the resistance of the first electrode metal lead 02 of each light-emitting area 01 is consistent, and the voltage drop of the first electrode metal lead 02 is the same. In this way, the voltage of each light-emitting area 01 can be the same under constant current conditions, which can further simplify the peripheral circuit.

[0087] For example, such as Figure 2 As shown, the width of the first electrode metal lead 02 includes a first width b1, a second width b2, and a third width b3, which increase sequentially. The distance between the first electrode metal lead 02 with the first width b1 and the bonding area outside the screen is less than the distance between the first electrode metal lead 02 with the second width b2 and the bonding area outside the screen, and the distance between the first electrode metal lead 02 with the second width b2 and the bonding area outside the screen is less than the distance between the first electrode metal lead 02 with the third width b3 and the bonding area outside the screen.

[0088] This invention also provides a method for fabricating a light-emitting device. See [link to previous article]. Figure 7 , Figure 7 This is a schematic flowchart of a method for fabricating a light-emitting device according to an embodiment of the present invention. Figure 3 Taking the structure of the light-emitting device shown as an example, the fabrication method of the light-emitting device includes the following steps:

[0089] S110. A substrate is provided, the surface of which includes at least one light-emitting area.

[0090] See Figure 8A substrate 1 is provided, and the surface of the substrate 1 includes at least one light-emitting region 01. The light-emitting device includes a light-emitting side S1 and a backlight side S2.

[0091] S120. At least one first electrode and at least one conductive post are formed on the surface of the substrate where the backlight side is located. The first electrode is located in the light-emitting area, and the conductive post is located at the edge of the light-emitting area. The conductive post is connected to the first electrode and extends from the light-emitting side to the backlight side.

[0092] See Figure 9 At least one first electrode 20 and at least one conductive post 3 are formed on the surface of the backlight side S2 of the substrate 1. The first electrode 20 is located in the light-emitting area 01, and the conductive post 3 is located at the edge of the light-emitting area 01. The conductive post 3 is connected to the first electrode 20 and extends from the light-emitting side S1 to the backlight side S2.

[0093] Optionally, when S120 forms at least one first electrode and at least one conductive post on the surface of the substrate on the backlight side, it further includes:

[0094] See Figure 9 A conductive pillar insulating layer 4 is formed on a portion of the side surface of the conductive pillar 3. Specifically, the conductive pillar insulating layer 4 is used to insulate the electrodes of different light-emitting units 2.

[0095] S130. A light-emitting device layer and a second electrode are sequentially formed on the surface of the first electrode away from the substrate, and the first electrode, the light-emitting device layer and the second electrode constitute a light-emitting unit.

[0096] Referring to 10, a stack of light-emitting device layer 21 and second electrode 22 is sequentially formed on the surface of the first electrode 20 away from the substrate 1. The first electrode 20, the light-emitting device layer 21 and the second electrode 22 constitute the light-emitting unit 2.

[0097] S140. At least one first electrode metal lead is formed on the side of the second electrode away from the substrate. The conductive pillar is electrically connected to the first electrode metal lead in a one-to-one correspondence. The first electrode metal lead is electrically connected to the bonding area outside the screen through the light-emitting area.

[0098] See Figure 3 At least one first electrode metal lead 02 is formed on the side of the second electrode 22 away from the substrate 1. The conductive pillar 3 is electrically connected to the first electrode metal lead 02 in a one-to-one correspondence. The first electrode metal lead 02 is electrically connected to the external bonding area of ​​the screen through the light-emitting area 01. Optionally, the second electrode insulating spacer layer is used to insulate the first electrode metal lead 02 and the second electrode 22.

[0099] Among them, the first electrode metal lead 02 is insulated from the second electrode 22, the conductive post 3 is insulated from the second electrode 22, and the electrodes of different light-emitting units 2 are insulated from each other.

[0100] In the technical solution provided in this embodiment, the conductive posts 3 are located one-to-one at the edge of the light-emitting area 01. The first electrode metal lead 02 is electrically connected to the bonding area outside the screen through the light-emitting area 01. The first electrode metal lead 02 does not occupy the area between the light-emitting areas 01. The first electrode metal lead 02 is located in the light-emitting area 01, thereby increasing the setting space of the first electrode metal lead 02 and avoiding the problem of the first electrode metal lead 02 being too narrow. On the one hand, it increases the resistance of the first electrode metal lead 02, avoiding the problem of the first electrode metal lead 02 in the light-emitting area 01, which is far from the bonding area outside the screen, having a high resistance and causing the voltage of the first electrode metal lead 02 in the light-emitting area 01 to rise. On the other hand, it increases the area of ​​the first electrode metal lead 02, avoiding the problem of the first electrode metal lead 02 being too narrow at the edge of the screen near the bonding area outside the screen, where the anti-static weak area is too small, resulting in the equivalent capacitance of the first electrode metal lead 02 and other conductive film layers in this area being too low, making it easy to be broken down by the electrostatic discharge process, causing the lead to short circuit or open circuit.

[0101] Optionally, based on the above technical solution, S130, which involves sequentially forming a light-emitting device layer and a stack of second electrodes on the surface of the first electrode away from the substrate, includes:

[0102] A light-emitting device layer and a stack of second electrodes are sequentially formed on the side of the first electrode away from the substrate. The orthogonal projection of the light-emitting device layer and the stack of second electrodes onto the substrate covers at least a portion of the orthogonal projection of the first electrode onto the substrate.

[0103] Figure 3 The stack of the light-emitting device layer 21 and the second electrode 22 covers the portion of the first electrode 20 in the orthogonal projection of the substrate 1. Figure 4 In the above, the stack of the light-emitting device layer 21 and the second electrode 22 covers the entire projection of the first electrode 20 onto the substrate 1.

[0104] S130, after sequentially forming the light-emitting device layer and the stack of the second electrode on the surface of the first electrode away from the substrate, further includes:

[0105] A second electrode insulating spacer layer is formed on the side of the second electrode away from the substrate. The second electrode insulating spacer layer is located between the second electrode and the metal lead trace of the first electrode. The second electrode insulating spacer layer is set higher than or equal to the conductive post insulating wrapping layer. The conductive post is set higher than the second electrode insulating spacer layer. The conductive post insulating wrapping layer is set higher than the second electrode. The metal lead trace of the first electrode is in electrical contact with at least the side of the conductive post that is higher than the second electrode insulating spacer layer.

[0106] Figure 3 In the middle, the first electrode metal lead 02 is in electrical contact with the side of the conductive post 3 that is higher than the insulating spacer layer 5 of the second electrode and the surface of the conductive post 3 that is away from the substrate 1. Figure 4 In the middle, the first electrode metal lead 02 is in electrical contact with the side of the conductive post 3 which is higher than the insulating spacer layer 5 of the second electrode.

[0107] Specifically, the conductive pillar insulating layer 4 is located between two adjacent first electrodes 20 and is positioned higher than the second electrode 22, serving to insulate the electrodes of different light-emitting units 2. The second electrode insulating spacer layer 5 insulates the second electrode 22 and the first electrode metal lead 02. The first electrode metal lead 02 makes electrical contact with the side of the conductive pillar 3 above the second electrode insulating spacer layer 5, thereby achieving electrical connection between the first electrode metal lead 02 and the conductive pillar 3, and ultimately achieving electrical connection between the first electrode metal lead 02 and the first electrode 20. The insulating capability of the second electrode insulating spacer layer 5 can be adjusted by setting its dielectric constant. For example, the second electrode insulating spacer layer 5 can be made of an insulating material with a dielectric constant greater than 3.5. Furthermore, the second electrode 22 and the first electrode metal lead 02 are insulated by the second electrode insulating spacer layer 5. Since the first electrode metal lead 02 is located in the light-emitting area 01, its line width can be made relatively wide, reducing the resistance of the first electrode metal lead 02. This avoids the situation where the anti-static weak area of ​​the first electrode metal lead 02 near the outer bonding area of ​​the screen edge is too small, resulting in an excessively low equivalent capacitance between the first electrode metal lead 02 and other conductive film layers in this area, making it extremely susceptible to breakdown during electrostatic discharge, causing short circuits or open circuits in the lead. Moreover, by selecting an insulating layer material with a high dielectric constant, the anti-static capability of the device is further improved.

[0108] Optionally, based on the above technical solutions, for Figure 3 For the light-emitting device shown, S130, the stack of a light-emitting device layer and a second electrode sequentially formed on the surface of the first electrode away from the substrate includes:

[0109] A light-emitting device layer and a second electrode are sequentially formed on the side of the first electrode away from the substrate using a patterned film deposition method. The stack of the light-emitting device layer and the second electrode covers the orthogonal projection of the first electrode onto the substrate.

[0110] like Figure 10As shown, a stack of light-emitting device layer 21 and second electrode 22 is sequentially formed on the side of the first electrode 20 away from the substrate 1 using a patterned film deposition method. The orthographic projection of the stack of light-emitting device layer 21 and second electrode 22 onto the substrate 1 covers the orthographic projection of the first electrode 20 onto the substrate 1. The orthographic projection of the stack of light-emitting device layer 21 and second electrode 22 onto the substrate 1 also covers the second portion of the orthographic projection of the first electrode 20b onto the substrate 1.

[0111] S130, after sequentially forming the light-emitting device layer and the stack of the second electrode on the surface of the first electrode away from the substrate, further includes:

[0112] A second electrode insulating spacer layer is formed on the side of the second electrode away from the substrate using a patterned film deposition method. The orthographic projection of the second electrode insulating spacer layer onto the substrate at least covers the orthographic projections of the second electrode and the conductive pillar insulating wrapping layer onto the substrate. The orthographic projections of the second electrode insulating spacer layer and the conductive pillar onto the substrate do not overlap.

[0113] The conductive pillar has an electrical contact with the surface of the conductive pillar away from the substrate and the metal lead of the first electrode, and the metal lead of the first electrode has an electrical contact with the side of the conductive pillar above the insulating spacer layer of the second electrode.

[0114] like Figure 3 As shown, a second electrode insulating spacer layer 5 is formed on the side of the second electrode 22 away from the substrate 1 using a patterned film deposition method. The orthographic projection of the second electrode insulating spacer layer 5 onto the substrate 1 at least covers the orthographic projections of the second electrode 22 and the conductive pillar insulating wrapping layer 4 onto the substrate. The orthographic projections of the second electrode insulating spacer layer 5 and the conductive pillar 3 onto the substrate 1 do not overlap. The surface of the conductive pillar 3 away from the substrate 1 is in electrical contact with the first electrode metal lead 02, and the first electrode metal lead 02 is in electrical contact with the side of the conductive pillar 3 above the second electrode insulating spacer layer 5. It should be noted that, except for not covering the orthographic projection of the conductive pillar 3 onto the substrate 1, the orthographic projection area of ​​the second electrode insulating spacer layer 5 onto the substrate 1 can be increased to cover the entire substrate 1.

[0115] Specifically, in this embodiment, there is no need to limit the cross-sectional shape of the conductive pillar 3, thereby reducing the difficulty of fabricating the conductive pillar 3. Furthermore, the stack of the light-emitting device layer 21 and the second electrode 22 only covers the first electrode 20, eliminating the need to fabricate the first electrode metal lead 02 too thickly, thus reducing the thickness of the light-emitting device.

[0116] In this embodiment, the patterned film formation method includes laser printing or masking. It should be noted that the mask used in the patterned film formation method includes a light-transmitting area that covers the light-emitting area 01. A very small blocking part is provided within the light-transmitting area, blocking the conductive pillar 3 and the conductive pillar insulating layer 4. The blocking part is connected to a thin line, which is connected to the edge of the mask. The thin line supports the blocking part, and its thickness is less than 200 micrometers, which reduces the influence of the thin line on the light-transmitting area.

[0117] or,

[0118] against Figure 4 For the light-emitting device shown, S130, the stack of a light-emitting device layer and a second electrode sequentially formed on the surface of the first electrode away from the substrate includes:

[0119] A light-emitting device layer and a second electrode are sequentially formed on the side of the first electrode away from the substrate using a whole-surface film deposition method. The orthogonal projection of the light-emitting device layer and the second electrode onto the substrate covers the orthogonal projection of the first electrode onto the substrate.

[0120] See Figure 11 A light-emitting device layer 21 and a second electrode 22 are sequentially formed on the side of the first electrode 20 away from the substrate 1 using a whole-surface film deposition method. The orthogonal projection of the light-emitting device layer 21 and the second electrode 22 onto the substrate 1 covers the orthogonal projection of the first electrode 20 onto the substrate 1.

[0121] S130, after sequentially forming the light-emitting device layer and the stack of the second electrode on the surface of the first electrode away from the substrate, further includes:

[0122] A second electrode insulating spacer layer is formed on the side of the second electrode away from the substrate by a whole-surface film forming method, and the orthogonal projection of the second electrode insulating spacer layer on the substrate at least covers the orthogonal projection of the second electrode on the substrate.

[0123] The vertical cross-sectional shape of the portion of the conductive pillar above the light-emitting device layer is an inverted trapezoid; the metal lead of the first electrode is in electrical contact with the side of the conductive pillar above the insulating spacer layer of the second electrode.

[0124] See Figure 12A second electrode insulating spacer layer 5 is formed on the side of the second electrode 22 away from the substrate 1 using a full-surface film deposition method. The second electrode insulating spacer layer 5 at least covers the second electrode 22 and the conductive pillar insulating wrapping layer 4. It should be noted that the orthographic projection of the second electrode insulating spacer layer 5 onto the substrate 1 is generally larger than the orthographic projection area of ​​the second electrode 22 onto the substrate 1, and the orthographic projection area of ​​the second electrode insulating spacer layer 5 onto the substrate 1 can be equal to the area of ​​the entire substrate 1. The vertical cross-sectional shape of the portion of the conductive pillar 3 above the light-emitting device layer 21 is an inverted trapezoid; the first electrode metal lead 02 is in electrical contact with the side of the conductive pillar 3 above the second electrode insulating spacer layer 5.

[0125] Specifically, the vertical cross-sectional shape of the portion of the conductive pillar 3 above the light-emitting device layer 21 is an inverted trapezoid. During the formation of the second electrode 22 and the second electrode insulating spacer layer 5, the formation of the second electrode 22 on the side of the portion of the conductive pillar 3 above the light-emitting device layer 21 can be avoided. This ensures that there is no conductive layer on the side of the portion of the conductive pillar 3 above the light-emitting device layer 21, thus avoiding the short circuit problem between the first electrode metal lead 02 and the second electrode 22.

[0126] Optionally, based on the above technical solutions, such as Figure 6 As shown, the vertical cross-sectional shape of the conductive pillar 3 is an inverted trapezoid. Specifically, the inverted trapezoidal shape of the cross-sectional shape of the conductive pillar 3 above the light-emitting device layer 21 reduces the difficulty of forming the conductive pillar 3.

[0127] Optionally, based on the above technical solution, this embodiment provides two methods for preparing the light-emitting device layer 21, the second electrode 22, and the second electrode insulating spacer layer 5. Specifically, the conductive pillar insulating wrapping layer 4 is located between two adjacent first electrodes 20 and is positioned higher than the second electrode 22, used to insulate the electrodes of different light-emitting units 2. The second electrode insulating spacer layer 5 is used to insulate the second electrode 22 and the first electrode metal lead 02. The first electrode metal lead 02 makes electrical contact with the side of the conductive pillar 3 above the second electrode insulating spacer layer 5, thereby realizing the electrical connection between the first electrode metal lead 02 and the conductive pillar 3, and ultimately realizing the electrical connection between the first electrode metal lead 02 and the first electrode 20.

[0128] It should be understood that the various forms of processes shown above can be used to rearrange, add, or delete steps. For example, the steps described in this application can be executed in parallel, sequentially, or in different orders, as long as the desired result of the technical solution of this application can be achieved, and this is not limited herein.

[0129] The specific embodiments described above do not constitute a limitation on the scope of protection of this invention. Those skilled in the art should understand that various modifications, combinations, sub-combinations, and substitutions can be made according to design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this invention should be included within the scope of protection of this invention.

Claims

1. A light-emitting device, the light-emitting device comprising a light-emitting side and a backlight side, characterized in that, include: A substrate, the surface of which includes at least one light-emitting region; At least one light-emitting unit is located on the surface of the substrate on the backlight side and is located one-to-one with the light-emitting area. The light-emitting unit includes a stack of a first electrode, a light-emitting device layer and a second electrode, and the first electrode is in contact with the substrate. At least one conductive post is provided, each of which is located at the edge of the light-emitting area. The conductive post is connected to the first electrode and extends from the light-emitting side to the backlight side. At least one first electrode metal lead is provided, the first electrode metal lead is located on the side of the second electrode away from the substrate, the conductive pillar is electrically connected to the first electrode metal lead in a one-to-one correspondence, the first electrode metal lead is electrically connected to the external bonding area of ​​the screen through the light-emitting area, thereby increasing the area of ​​the first electrode metal lead and avoiding the first electrode metal lead line width being too narrow. The first electrode metal lead is insulated from the second electrode, the conductive post is insulated from the second electrode, and the electrodes of different light-emitting units are insulated from each other.

2. The light-emitting device according to claim 1, characterized in that, The conductive post is located on the portion of the surface of the first electrode that is away from the substrate.

3. The light-emitting device according to claim 1, characterized in that, It also includes an insulating wrapping layer for the conductive pillars and an insulating spacer layer for the second electrode. The insulating wrapping layer of the conductive column is positioned higher than the second electrode, and the insulating wrapping layer of the conductive column surrounds part of the side surface of the conductive column. The stack of the light-emitting device layer and the second electrode covers at least a portion of the orthogonal projection of the first electrode onto the substrate. The second electrode insulating spacer is located between the second electrode and the first electrode metal lead trace. The second electrode insulating spacer is set higher than or equal to the conductive post insulating wrapping layer. The conductive post is set higher than the second electrode insulating spacer. The first electrode metal lead trace is in electrical contact with at least the side of the conductive post that is higher than the second electrode insulating spacer.

4. The light-emitting device according to claim 3, characterized in that, The stack of the light-emitting device layer and the second electrode covers the orthogonal projection of the first electrode onto the substrate. The orthographic projection of the second electrode insulating spacer layer onto the substrate at least covers the orthographic projection of the second electrode and the conductive pillar insulating wrapping layer onto the substrate; The second electrode insulating spacer layer and the conductive pillar do not overlap in their orthographic projections onto the substrate; The conductive post is in electrical contact with the surface of the substrate away from the first electrode metal lead, and the first electrode metal lead is in electrical contact with the side of the conductive post above the second electrode insulating spacer.

5. The light-emitting device according to claim 3, characterized in that, The projection of the stack of the light-emitting device layer and the second electrode onto the substrate covers the projection of the first electrode onto the substrate. The orthographic projection of the second electrode insulating spacer layer onto the substrate at least covers the orthographic projection of the second electrode onto the substrate; The vertical cross-sectional shape of the portion of the conductive pillar above the light-emitting device layer is an inverted trapezoid. The first electrode metal lead is in electrical contact with the side of the conductive post that is higher than the insulating spacer layer of the second electrode.

6. The light-emitting device according to claim 3, characterized in that, The projection of the stack of the light-emitting device layer and the second electrode onto the substrate covers the projection of the first electrode onto the substrate. The orthographic projection of the second electrode insulating spacer layer onto the substrate at least covers the orthographic projection of the second electrode onto the substrate; The vertical cross-sectional shape of the conductive column is an inverted trapezoid; The first electrode metal lead is in electrical contact with the side of the conductive post that is higher than the insulating spacer layer of the second electrode.

7. The light-emitting device according to claim 1, characterized in that, The distance between the first electrode metal lead and the bonding area outside the screen is proportional to the width of the first electrode metal lead.

8. A method for fabricating a light-emitting device, the light-emitting device comprising a light-emitting side and a backlighting side, characterized in that, include: A substrate is provided, the surface of which includes at least one light-emitting region; At least one first electrode and at least one conductive post are formed on the surface of the substrate on the backlight side. The first electrode is located in the light-emitting area, and the conductive post is located at the edge of the light-emitting area. The conductive post is connected to the first electrode and extends from the light-emitting side to the backlight side. A light-emitting device layer and a second electrode are sequentially formed on the surface of the first electrode away from the substrate, and the first electrode, the light-emitting device layer and the second electrode constitute a light-emitting unit; At least one first electrode metal lead is formed on the side of the second electrode away from the substrate. The conductive pillar is electrically connected to the first electrode metal lead in a one-to-one correspondence. The first electrode metal lead is electrically connected to the external bonding area of ​​the screen through the light-emitting area, thereby increasing the area of ​​the first electrode metal lead and avoiding the first electrode metal lead being too narrow. The first electrode metal lead is insulated from the second electrode, the conductive post is insulated from the second electrode, and the electrodes of different light-emitting units are insulated from each other.

9. The method for preparing the light-emitting device according to claim 8, characterized in that, When forming at least one first electrode and at least one conductive post on the surface of the substrate located on the backlight side, the method further includes: An insulating wrapping layer for the conductive column is formed on a portion of the side surface of the conductive column. The stack of a light-emitting device layer and a second electrode sequentially formed on the surface of the first electrode away from the substrate includes: A light-emitting device layer and a stack of the second electrode are sequentially formed on the side of the first electrode away from the substrate, and the orthogonal projection of the light-emitting device layer and the second electrode onto the substrate covers at least a portion of the orthogonal projection of the first electrode onto the substrate. After the light-emitting device layer and the second electrode are sequentially formed on the surface of the first electrode away from the substrate, the process further includes: A second electrode insulating spacer layer is formed on the side of the second electrode away from the substrate. The second electrode insulating spacer layer is located between the second electrode and the first electrode metal lead trace. The second electrode insulating spacer layer is higher than or equal to the conductive pillar insulating wrapping layer. The conductive pillar is higher than the second electrode insulating spacer layer. The conductive pillar insulating wrapping layer is higher than the second electrode. The first electrode metal lead trace is in electrical contact with at least the side of the conductive pillar that is higher than the second electrode insulating spacer layer.

10. The method for preparing the light-emitting device according to claim 9, characterized in that, The stack of a light-emitting device layer and a second electrode sequentially formed on the surface of the first electrode away from the substrate includes: A light-emitting device layer and a stack of the second electrode are sequentially formed on the side of the first electrode away from the substrate using a patterned film deposition method. The stack of the light-emitting device layer and the second electrode covers the orthogonal projection of the first electrode onto the substrate. After the light-emitting device layer and the second electrode are sequentially formed on the surface of the first electrode away from the substrate, the process further includes: A second electrode insulating spacer layer is formed on the side of the second electrode away from the substrate using a patterned film deposition method. The orthographic projection of the second electrode insulating spacer layer onto the substrate at least covers the orthographic projections of the second electrode and the conductive pillar insulating wrapping layer onto the substrate. The orthographic projections of the second electrode insulating spacer layer and the conductive pillar onto the substrate do not overlap. Wherein, the conductive pillar is in electrical contact with the surface of the substrate away from the first electrode metal lead, and the first electrode metal lead is in electrical contact with the side of the conductive pillar above the second electrode insulating spacer layer; The patterned film formation method includes laser printing, masking, coating, or printing. or, The stack of a light-emitting device layer and a second electrode sequentially formed on the surface of the first electrode away from the substrate includes: A light-emitting device layer and a stack of the second electrode are sequentially formed on the side of the first electrode away from the substrate using a whole-surface film forming method. The orthogonal projection of the light-emitting device layer and the second electrode onto the substrate covers the orthogonal projection of the first electrode onto the substrate. After the light-emitting device layer and the second electrode are sequentially formed on the surface of the first electrode away from the substrate, the process further includes: A second electrode insulating spacer layer is formed on the side of the second electrode away from the substrate by a whole-surface film forming method, wherein the orthogonal projection of the second electrode on the substrate at least covers the orthogonal projection of the second electrode on the substrate. The vertical cross-sectional shape of the portion of the conductive pillar above the light-emitting device layer is an inverted trapezoid; the first electrode metal lead is in electrical contact with the side of the conductive pillar above the second electrode insulating spacer layer.

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