Apparatus for processing a substrate and method for processing a substrate

Abstract

The present invention provides an apparatus for processing a substrate and a method for processing a substrate. A mask processing apparatus includes a support unit configured to support and rotate a mask having a first pattern within a plurality of cells thereof and a second pattern at an outer region of the plurality of cells; a heating unit including a laser irradiator configured to irradiate a laser to the second pattern and a moving module configured to change a position of the laser irradiation module; and a controller configured to control the support unit and the heating unit, wherein when a processing position is divided into four equal parts from a first quadrant to a fourth quadrant based on a center of the mask, the laser irradiator is located in the fourth quadrant and the first quadrant in a direction in which the processing position is linearly moved from a standby position, in the third quadrant in a direction perpendicular to the fourth quadrant, and in the second quadrant in a direction perpendicular to the first quadrant, wherein the controller controls rotation of the support unit such that the second pattern is located in the fourth quadrant.

Description

[0001] Cross-references to related applications

[0002] This application claims priority and benefit to Korean Patent Application No. 10-2021-0116912, filed with the Korean Patent Office on September 2, 2021, the entire contents of which are incorporated herein by reference. Technical Field

[0003] The embodiments of the inventive concept described herein relate to a substrate processing apparatus and a substrate processing method, and more specifically, to a substrate processing apparatus and a substrate processing method for processing a substrate by heating a substrate. Background Technology

[0004] To manufacture semiconductor devices, various processes are performed on substrates such as wafers, including photolithography, etching, ashing, ion implantation, and thin-film deposition. Various processing liquids and gases are used in each process. Furthermore, a drying process is performed on the substrate to remove the processing liquids used to treat it.

[0005] Photolithography processes used to form patterns on wafers include exposure processes. An exposure process is a pre-executed operation that cuts the semiconductor integrated material attached to the wafer into a desired pattern. Exposure processes can have various purposes, such as forming patterns for etching and forming patterns for ion implantation. During exposure, a mask is used to draw patterns on the wafer with light; the mask is a kind of "framework." When light is exposed to the semiconductor integrated material on the wafer (e.g., photoresist on the wafer), the chemical properties of the photoresist change according to the pattern formed by the light and the mask. The pattern is formed on the wafer when a developer is supplied to the photoresist (whose chemical properties have already been changed according to the pattern).

[0006] To perform the exposure process accurately, the pattern formed on the mask must be precisely fabricated. To confirm that the pattern is formed precisely in the desired form, the operator uses inspection equipment such as a scanning electron microscope (SEM) to examine the formed pattern. However, a large number of patterns are formed on a single mask. That is, to inspect a single mask, a significant amount of time is required to examine all the numerous patterns.

[0007] Therefore, a monitoring pattern capable of representing a pattern group comprising multiple patterns is formed on the mask. Furthermore, anchor patterns representing multiple pattern groups can be formed on the mask. An operator can estimate the quality of the pattern formed on the mask by inspecting the anchor patterns. Additionally, an operator can estimate the quality of the patterns included in a pattern group by inspecting the monitoring patterns.

[0008] As described above, since the monitoring pattern and the anchoring pattern are formed on the mask, the operator can effectively reduce the time required for mask inspection. However, to improve the accuracy of mask inspection, it is preferable that the critical dimensions of the monitoring pattern and the anchoring pattern are the same.

[0009] When etching is performed to make the critical dimensions of the monitoring pattern and the anchor pattern equal, over-etching may occur at the pattern. For example, the difference between the etch rate for the critical dimension of the monitoring pattern and the etch rate for the anchor pattern may occur multiple times, and over-etching may occur at the critical dimensions of the monitoring pattern and the anchor pattern during repeated etching of the monitoring pattern and / or the anchor pattern to reduce the difference. When the etching process is performed precisely to minimize the occurrence of such over-etching, the etching process is time-consuming. Therefore, an additional critical dimension calibration process is performed to precisely calibrate the critical dimensions of the patterns formed on the mask.

[0010] Figure 1 This diagram illustrates the normal distribution of the first critical dimension CDP1 and the second critical dimension CDP2 (the critical dimension of the anchoring pattern) of the monitoring pattern on the mask during the mask manufacturing process, prior to the critical dimension correction process. Furthermore, both the first critical dimension CDP1 and the second critical dimension CDP2 have dimensions smaller than the target critical dimension. Before the critical dimension correction process, there is an intentional deviation between the critical dimension (CD) of the monitoring pattern and the critical dimension of the anchoring pattern. This is achieved by additional etching of the anchoring pattern during the critical dimension correction process, making the critical dimensions of both patterns identical. In processes where the anchoring pattern is over-etched, if the anchoring pattern is over-etched than the monitoring pattern, a difference in the critical dimensions of the monitoring and anchoring patterns will occur, potentially preventing accurate correction of the critical dimension of the pattern formed at the mask. When additional etching is performed on the anchoring pattern, it should be accompanied by precise etching relative to the anchoring pattern. Summary of the Invention

[0011] The present invention provides a substrate processing apparatus and a substrate processing method for effectively processing substrates.

[0012] The present invention provides a substrate processing apparatus and a substrate processing method for making the critical dimensions of patterns formed on a substrate uniform.

[0013] The present invention provides a substrate processing apparatus and a substrate processing method for precisely etching a specific pattern formed on a substrate.

[0014] The present invention provides a substrate processing apparatus and a substrate processing method for minimizing the structure of a heating unit disposed on a substrate.

[0015] The technical objectives of this invention are not limited to those described above, and other unmentioned technical objectives will become apparent to those skilled in the art from the following description.

[0016] The present invention provides a mask processing apparatus. The mask processing apparatus includes: a support unit configured to support and rotate a mask having a first pattern within a plurality of cells and a second pattern in an outer region of the plurality of cells; a heating unit including a laser irradiation module and a moving module, the laser irradiation module having a laser irradiator for irradiating the second pattern with laser light, the moving module being configured to change the position of the laser irradiation module; and a controller configured to control the support unit and the heating unit, wherein, when a processing position is divided into four equal parts from a first quadrant to a fourth quadrant based on the center of the mask, the laser irradiator is positioned in the fourth quadrant and the first quadrant in a direction of linear movement from a standby position to the processing position, in the third quadrant in a direction perpendicular to the fourth quadrant, and in the second quadrant in a direction perpendicular to the first quadrant, and wherein the controller controls the rotation of the support unit such that the second pattern is positioned in the fourth quadrant.

[0017] In the implementation scheme, the controller controls the heating unit so that the laser irradiator moves from a standby position to an irradiation position corresponding to the second pattern located in the fourth quadrant, and the laser irradiates the second pattern from the irradiation position.

[0018] In one implementation, the moving module moves the laser irradiator in a first direction horizontal to the ground and in a second direction perpendicular to the first direction and horizontal to the ground, wherein the fourth quadrant is the region from the standby position to the irradiation position that minimizes the sum of the amount of movement of the laser irradiator in the first direction and the amount of movement in the second direction.

[0019] In one embodiment, the mask processing apparatus further includes a standby port having a laser irradiator positioned at a standby position, and wherein a monitoring target is disposed on the standby port having an origin that matches the center of the laser irradiator when viewed from above.

[0020] In one implementation, the heating unit further includes a camera module in which an image displayed on the monitoring target is acquired from a laser irradiated by a laser irradiator, and the acquired image is transmitted to a controller.

[0021] In the implementation scheme, the controller obtains the laser position information from the image and calculates the amount of movement of the laser irradiator from the standby position to the second pattern positioned at the irradiation position based on the position information.

[0022] In the implementation scheme, the controller obtains the diameter information of the laser from the image, and obtains information about the laser irradiated from the laser irradiator based on the diameter information of the laser.

[0023] In the implementation plan, the first quadrant, the second quadrant, the third quadrant, and the fourth quadrant are positioned sequentially in a counterclockwise direction.

[0024] The present invention provides a mask processing apparatus. The mask processing apparatus includes: a liquid supply unit for supplying processing liquid to a mask supported on a support unit; and a container having a processing space for processing the mask and a recovery path for recovering the processing liquid, wherein the support unit supports the mask in the processing space.

[0025] In one implementation, the controller controls the heating unit to minimize the critical dimensions of the first pattern and the second pattern by irradiating the second pattern with a laser.

[0026] In the implementation scheme, the first pattern provided to each cell is a monitoring pattern of the exposure pattern formed at the cell, and the second pattern is a condition setting pattern of the mask processing device.

[0027] The present invention provides a substrate processing apparatus. The substrate processing apparatus includes: a support unit for supporting and rotating a substrate having a specific pattern formed thereon; a heating unit for heating the pattern; and a controller for controlling the support unit and the heating unit, wherein the controller controls the support unit to move the pattern to a heating position by rotating the substrate, and controls the heating unit to move to a standby position and a heating position.

[0028] In the implementation scheme, when the processing position is divided into four equal parts from the first quadrant to the fourth quadrant based on the center of the substrate, the heating unit is positioned in the fourth quadrant and the first quadrant in a direction that moves linearly from the standby position to the processing position, in the third quadrant in a direction perpendicular to the fourth quadrant, and in the second quadrant in a direction perpendicular to the first quadrant. The heating position is the position of the pattern when the pattern is positioned in the fourth quadrant.

[0029] In one embodiment, the heating unit moves in a first direction horizontal to the ground and in a second direction perpendicular to the first direction and horizontal to the ground, wherein the fourth quadrant is the region from the standby position to the irradiation position that minimizes the sum of the amount of movement of the heating unit in the first direction and the amount of movement in the second direction.

[0030] The present invention provides a substrate processing method for etching a substrate having a first pattern and a second pattern different from the first pattern formed on the substrate. The substrate processing method includes: as a position correction step, moving the second pattern to an irradiation position; as a liquid processing step, supplying etching liquid to the substrate; and as a heating step, irradiating the second pattern moved to the irradiation position with a laser while etching liquid remains on the substrate. The irradiation position is a position corresponding to the second position located in the fourth quadrant when the processing position is divided into four equal parts from a first quadrant to a fourth quadrant based on the center of the substrate. When a heating unit is positioned in the fourth quadrant and the first quadrant in a direction of linear movement from a standby position to the processing position, in the third quadrant in a direction perpendicular to the fourth quadrant, and in the second quadrant in a direction perpendicular to the first quadrant, the irradiation position is a position corresponding to the second position located in the fourth quadrant.

[0031] In the implementation scheme, the fourth quadrant is the region where the heating unit moves the least from the standby position to the irradiation position.

[0032] In one implementation, the position correction step involves rotating the substrate to move the second pattern to the fourth quadrant.

[0033] In the implementation scheme, during the heating step, the heating unit moves from the standby position to the irradiation position corresponding to the second pattern located in the fourth quadrant, and irradiates the second pattern with laser light from the irradiation position.

[0034] In an embodiment, the substrate processing method further includes performing the following process: minimizing the deviation between the critical dimensions of the first pattern and the critical dimensions of the second pattern by irradiating a laser relative to the second pattern.

[0035] In the implementation, the first pattern is a monitoring pattern of the exposure pattern formed on the substrate, and the second pattern is a condition setting pattern for processing the substrate.

[0036] According to the embodiments conceived in this invention, the substrate can be processed effectively.

[0037] According to the embodiments conceived in this invention, the critical dimensions of the patterns formed on the substrate can be made uniform.

[0038] According to embodiments of the present invention, precise etching can be performed on specific patterns formed on a substrate.

[0039] According to the embodiments of the present invention, the structure of the heating unit disposed on the substrate can be minimized.

[0040] The effects of this invention are not limited to those described above, and other effects not mentioned will become apparent to those skilled in the art from the following description. Attached Figure Description

[0041] Referring to the following figures, the above and other objects and features will become apparent from the following description, wherein, unless otherwise stated, the same reference numerals refer to the same parts throughout the figures, and in the figures:

[0042] Figure 1 The normal distribution of the critical dimensions of the monitoring pattern and the anchoring pattern is shown.

[0043] Figure 2 A plan view of a substrate processing apparatus according to an embodiment of the present invention is shown schematically.

[0044] Figure 3 It schematically shows that in Figure 2 The state of the substrate being processed in the liquid processing chamber.

[0045] Figure 4 schematically shown Figure 2 Implementation scheme for the liquid handling chamber.

[0046] Figure 5 for Figure 4 A top view of the liquid handling chamber.

[0047] Figure 6 It shows Figure 4 The heating unit body, laser irradiation module, and camera module.

[0048] Figure 7 for Figure 6 A top view of the image module.

[0049] Figure 8 It shows Figure 4 Error checking unit and support unit for the liquid handling chamber.

[0050] Figure 9 for Figure 8 Top view of the error checking unit.

[0051] Figure 10 A flowchart illustrating a substrate processing method according to an embodiment of the present invention is provided.

[0052] Figure 11 The substrate processing apparatus is shown for inspection. Figure 10The state of error between the laser irradiation position and the preset monitoring target position during the process preparation steps.

[0053] Figure 12 and Figure 13 The execution was shown Figure 10 The state of the substrate processing apparatus in the position correction step.

[0054] Figure 14 The execution was shown Figure 10 The state of the substrate processing apparatus in the liquid processing step.

[0055] Figure 15 and Figure 16 The execution was shown Figure 10 The state of the substrate processing apparatus during the heating step. Detailed Implementation

[0056] The inventive concept can be modified in various ways and can take many forms, and specific embodiments thereof will be shown and described in detail in the accompanying drawings. However, embodiments of the inventive concept are not intended to limit the specific forms disclosed, and it should be understood that the inventive concept includes all variations, equivalents, and substitutions contained within the spirit and technical scope of the inventive concept. In the description of the inventive concept, detailed descriptions of related known technologies will be omitted where such obscurity is unnecessarily made unclear about the essence of the inventive concept.

[0057] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the inventive concept. As used herein, the singular forms “a,” “an,” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. It should also be understood that, as used herein, the terms “comprise” and “comprising” specify the presence of the stated features, integers, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof. As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items. Furthermore, the term “exemplary” is intended to refer to an embodiment or example.

[0058] It should be understood that although the terms "first," "second," "third," etc., may be used herein to describe various elements, components, regions, layers, and / or segments, these elements, components, regions, layers, and / or segments should not be limited by these terms. These terms are used only to distinguish one element, component, region, layer, and / or segment from another. Therefore, the first element, first component, first region, first layer, or first segment discussed below may be referred to as a second element, second component, second region, second layer, or second segment without departing from the teachings of the inventive concept.

[0059] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0060] In the following text, reference will be made to Figures 2 to 16 The embodiments of the present invention are described in detail. Figure 2 A plan view of a substrate processing apparatus according to an embodiment of the present invention is shown schematically. (Reference) Figure 2 The substrate processing apparatus includes an indexing module 10, a processing module 20, and a controller 30. According to an embodiment, when viewed from above, the indexing module 10 and the processing module 20 can be arranged along one direction. Hereinafter, the direction in which the indexing module 10 and the processing module 20 are arranged is defined as a first direction X, a direction perpendicular to the first direction X when viewed from above is defined as a second direction Y, and a direction perpendicular to the plane including the first direction X and the second direction Y is defined as a third direction Z.

[0061] The index module 10 transfers the substrate M from the container C in which the substrate M is housed to the processing module 20 for processing the substrate M. The index module 10 stores the substrate M in the container C, which has already undergone predetermined processing at the processing module 20. The longitudinal direction of the index module 10 can be formed in a second direction Y. The index module 10 may have a loading port 12 and an index frame 14.

[0062] A container C containing the substrate M is positioned on the loading port 12. The loading port 12 can be positioned on the opposite side of the processing module 20 relative to the index frame 14. Multiple loading ports 12 can be provided, and the multiple loading ports 12 can be arranged in a row along the second direction Y. The number of loading ports 12 can be increased or decreased depending on the process efficiency and floor space requirements of the processing module 20.

[0063] As container C, a sealed container, such as a front-open unified pod (FOUP), can be used. Container C can be placed on loading port 12 by means of a conveyor such as an overhead conveyor, overhead conveyor, or automated guided vehicle (AGV) (not shown) or by an operator.

[0064] An indexing robot 120 and an indexing track 124 can be disposed at the indexing frame 14. The indexing robot 120 transports the substrate M. The indexing robot 120 can transport the substrate M between the indexing module 10 and the buffer unit 200, which will be described later. The indexing robot 120 includes an indexing hand 122 on which the substrate M is placed. The substrate M can be placed on the indexing hand 122. The indexing hand 122 can be configured to be movable forward and backward, rotatable in the third direction Z, and movable along the third direction Z. Multiple hands 122 can be configured to be spaced apart from each other in the up / down direction. Multiple hands 122 can be independently movable forward and backward.

[0065] A cable guide rail 124 is disposed in the index frame 14, and the cable guide rail has a length direction along the second direction Y. An indexing robot 120 can be placed on the cable guide rail 124, and the indexing robot 120 can be movable along the cable guide rail 124.

[0066] Controller 30 can control the substrate processing apparatus. The controller may include a process controller and a storage unit. The process controller comprises: a microprocessor (computer) that performs control of the substrate processing apparatus; a user interface (such as a keyboard) through which an operator inputs commands to manage the substrate processing apparatus; and a display showing the operating status of the substrate processing apparatus. The storage unit stores a processing recipe, which is a control program for implementing the processing technology of the substrate processing apparatus by controlling the process controller, or a program for implementing components of the substrate processing apparatus according to data and processing conditions. Furthermore, the user interface and the storage unit may be connected to the process controller. The processing recipe may be stored in a storage medium in the storage unit, and the storage medium may be a hard disk, a portable disk (such as a CD-ROM or DVD), or a semiconductor memory (such as flash memory).

[0067] Processing module 20 may include a buffer unit 200, a transfer chamber 300, and a liquid processing chamber 400. The buffer unit 200 provides space in which substrates M fed into and removed from processing module 20 temporarily reside. The transfer chamber 300 provides space for transferring substrates M between the buffer unit 200, the liquid processing chamber 400, and the drying chamber 500. The liquid processing chamber 400 supplies liquid to substrates M to perform liquid processing processes for processing substrates M.

[0068] A buffer unit 200 may be disposed between the index frame 14 and the transfer chamber 300. The buffer unit 200 may be positioned at the end of the transfer chamber 300. A slot (not shown) in which the substrate M is placed is disposed inside the buffer unit 200. A plurality of slots (not shown) may be configured to be spaced apart from each other in the third direction Z.

[0069] The front and rear of the buffer unit 200 are open. The front is the surface facing the index module 10, and the rear is the surface facing the transfer chamber 300. The indexing robot 120 can access the buffer unit 200 through the front, and the transfer robot 320 (described below) can access the buffer unit 200 through the rear.

[0070] The transfer chamber 300 may have a longitudinal direction arranged in the first direction X. The liquid processing chamber 400 and the drying chamber 500 may be arranged on both sides of the transfer chamber 300. The liquid processing chamber 400 and the drying chamber 500 may be arranged on one side of the transfer chamber 300. The transfer chamber 300 and the liquid processing chamber 400 may be arranged along the second direction Y. The transfer chamber 300 and the drying chamber 500 may be arranged along the second direction Y.

[0071] According to the implementation scheme, the liquid processing chamber 400 can be disposed on both sides of the transfer chamber 300. The liquid processing chamber 400 can be disposed next to the transfer chamber 300, along the first direction X and the third direction Z respectively, in an arrangement of A×B (where A and B are natural numbers greater than 1 or 1 respectively).

[0072] The transfer chamber 300 includes a transfer robot 320 and a transfer track 340. The transfer robot 320 transfers a substrate M. The transfer robot 320 transfers the substrate M between the buffer unit 200, the liquid handling chamber 400, and the drying chamber 500. The transfer robot 320 includes a transfer hand 322 on which the substrate M is placed. The substrate M can be placed on the transfer hand 322. The transfer hand 322 can be configured to be movable forward and backward, rotatable about a third direction Z, and movable along the third direction Z. Multiple hands 322 are configured to be spaced apart from each other in the up / down direction, and multiple hands 322 can be independently movable forward and backward.

[0073] The conveyor track 340 can be disposed within the conveyor chamber 300 along its longitudinal direction. In one embodiment, the longitudinal direction of the conveyor track 340 can be disposed along a first direction X. A conveyor robot 320 can be placed on the conveyor track 340 and can be movable on the conveyor track 340.

[0074] The substrate M, which is processed in the liquid processing chamber 400, will be described in detail below. Figure 3 It schematically shows that in Figure 2 The state of the substrate being processed in the liquid processing chamber.

[0075] refer to Figure 3 The object to be processed in the liquid processing chamber 400 can be any of the following: wafer, glass, and photomask. For example, the substrate M processed in the liquid processing chamber 400 can be a photomask that serves as a "frame" in the exposure process.

[0076] The substrate M may have a rectangular shape. The substrate M may serve as a photomask acting as a "frame" in the exposure process. At least one reference mark AK may be affixed to the substrate M. For example, multiple reference marks AK may be formed in the corner regions of the substrate M. The reference mark AK may be a mark called an alignment key, used when aligning the substrate M. Further, the reference mark AK may be a mark used to determine the position of the substrate M. For example, the image module 470, described later, can acquire an image by imaging the reference mark AK and transmit the acquired image to the controller 30. The controller 30 can then analyze the image including the reference mark AK to detect the precise position of the substrate M. Furthermore, the reference mark AK may also be used to determine the position of the substrate M during transport.

[0077] Cells CE can be formed on substrate M. At least one cell CE can be formed, or multiple cells CE can be formed. Multiple patterns can be formed at each cell CE. The patterns formed at each cell CE can be defined as a pattern group. The patterns formed at cell CE can include an exposure pattern EP and a first pattern P1. A second pattern P2 can be set in the outer region of the cell area where multiple cells are formed.

[0078] An exposure pattern EP can be used to form an actual pattern on a substrate M. A first pattern P1 can be a single-cell representative pattern representing the exposure pattern EP within a cell CE. Furthermore, when multiple cells CE are provided, a first pattern is provided in each cell so that multiple first patterns P1 can be provided. In an embodiment, each of the multiple cells CE can be provided with a single first pattern P1. However, the inventive concept is not limited thereto; multiple first patterns P1 can be formed in a single cell CE. The first pattern P1 can have the form of combining portions of the various exposure patterns EP. The first pattern P1 can be referred to as a monitoring pattern. The average critical dimension of the multiple first patterns P1 can be referred to as a critical dimension monitoring macro.

[0079] When the operator examines the first pattern P1 using a scanning electron microscope (SEM), they can estimate whether the form of the exposure pattern EP formed in a single cell CE is good or bad. Therefore, the first pattern P1 can be used as an inspection pattern to inspect the exposure pattern EP. Furthermore, unlike the embodiments described above, the first pattern P1 can be any type of exposure pattern EP used in the actual exposure process. Moreover, the first pattern P1 can be used not only as an inspection pattern to inspect the exposure pattern but also as the exposure pattern used in the actual exposure process.

[0080] The second pattern P2 can be a whole cell representative pattern representing the exposure pattern EP on the entire cell of the substrate M. For example, the second pattern P2 can have the form of combining portions of each of the first patterns P1.

[0081] When an operator inspects the second pattern P2 using a scanning electron microscope (SEM), they can estimate whether the form of the exposure pattern EP formed on a substrate M is good or bad. Therefore, the second pattern P2 can be used as an inspection pattern. Furthermore, the second pattern P2 can be an inspection pattern not used in the actual exposure process. The second pattern P2 can also be a pattern used to set the process conditions of the exposure apparatus. The second pattern P2 can be referred to as an anchoring pattern.

[0082] The substrate processing apparatus disposed in the liquid processing chamber 400 will be described in detail below. An example will be described below of the processing performed in the liquid processing chamber 400 during the process of manufacturing a mask for an exposure process, where a fine critical dimension correction (FCC) process is performed.

[0083] The substrate M to be fed and processed in the liquid processing chamber 400 may be a substrate M that has already undergone pretreatment. The critical dimensions of the first pattern P1 and the second pattern P2 of the substrate M to be fed into the liquid processing chamber 400 may be different from each other. For example, the critical dimension of the first pattern P1 may be larger than the critical dimension of the second pattern P2. In an embodiment, the critical dimension of the first pattern P1 may have a first width (e.g., 69 nm). The critical dimension of the second pattern P2 may have a second width (e.g., 68.5 nm).

[0084] Figure 4 schematically shown Figure 2 Implementation scheme for the liquid handling chamber. Figure 5 for Figure 4 A top view of the liquid handling chamber. (Reference) Figure 4 and Figure 5The liquid processing chamber 400 includes a housing (not shown), a support unit 420, a processing container 430, a liquid supply unit 440, and a heating unit 450.

[0085] The housing (not shown) has an internal space. The housing (not shown) may have an internal space in which a processing container 430 is disposed. The housing (not shown) may have an internal space in which a liquid supply unit 440 and a heating unit 450 are disposed. The housing (not shown) may be provided with a channel (not shown) through which the substrate M can be fed and removed. The inner wall surface of the housing (not shown) may be coated with a material that is highly corrosion-resistant to the chemicals supplied by the liquid supply unit 440.

[0086] An exhaust port (not shown) may be formed on the bottom surface of the housing (not shown). The exhaust port (not shown) may be connected to an exhaust component, such as a pump capable of venting the internal space. Therefore, fumes or other gases that may be generated in the internal space can be discharged to the outside of the housing (not shown) through the exhaust port (not shown).

[0087] The support unit 420 can support the substrate M in the processing space of the processing container 430 described below. The support unit 420 can support the substrate M. The support unit 420 can rotate the substrate M. The support unit 420 may include a chuck 421, a support pin 422, a support shaft 426, and a drive member 427.

[0088] The chuck 421 may be plate-shaped with a constant thickness. When viewed from above, the chuck 421 may have a top surface configured as substantially circular. The top surface of the chuck 421 may be configured to have an area larger than that of the substrate M. A support pin 422 may be mounted on the chuck 421.

[0089] Support pins 422 can support substrate M. Multiple support pins 422 are arranged circumferentially along the top chuck 421, so that when viewed from above, the support pins 422 can have a generally circular shape. When viewed from above, the support pins 422 can have stepped portions to support substrate M. The stepped portions of the support pins 422 can have a first surface (lower surface) and a second surface (side surface). In an embodiment, the first surface can support the back (bottom) surface at the edge region of substrate M. The second surface can support the side surface of substrate M to limit lateral movement of substrate M during rotation. At least one support pin 422 can be provided. In an embodiment, multiple support pins 422 can be provided. The number of support pins 422 can correspond to the number of corners of substrate M having a rectangular shape. The support pins 422 can support the back (bottom) surface of substrate M, spaced apart from the top surface of chuck 421.

[0090] Support shaft 426 can be coupled to chuck 421. Support shaft 426 can be positioned below chuck 421. Support shaft 426 can be a hollow shaft. Support shaft 426 can be rotated by drive member 427. Drive member 427 can be a hollow motor. When drive member 427 rotates support shaft 426, chuck 421 coupled to support shaft 426 can rotate. Base plate M placed on support pin 422 mounted on chuck 421 can rotate together with the rotation of chuck 421.

[0091] The processing container 430 has a processing space with an open top. The processing container 430 may be cylindrical with an open top. The substrate M can undergo liquid processing and heat treatment in the processing space. The processing container 430 can prevent the processing liquid supplied to the substrate M from splashing into the housing (not shown), the liquid supply unit 440, and the heating unit 450.

[0092] The processing container 430 may have multiple recovery containers 432a, 432b, and 432c. Each of the recovery containers 432a, 432b, and 432c can recover different liquids from the liquid used to process the substrate M. Each of the recovery containers 432a, 432b, and 432c has a recovery space for recollecting the liquid used to process the substrate M. Each of the recovery containers 432a, 432b, and 432c may be arranged in an annular shape around the support unit 420. When the liquid processing process is performed, the liquid scattered by the rotation of the substrate M is introduced into the recovery space through an inlet formed between the recovery containers 432a, 432b, and 432c. Different types of processing liquids can be introduced into each of the recovery containers 432a, 432b, and 432c.

[0093] According to the implementation scheme, the processing container 430 may have a first recycling container 432a, a second recycling container 432b, and a third recycling container 432c. The first recycling container 432a may be arranged in an annular shape around the support unit 420. The second recycling container 432b may be arranged in an annular shape around the first recycling container 432a. The third recycling container 432c may be arranged in an annular shape around the second recycling container 432b.

[0094] Recovery lines 434a, 434b, and 434c, extending vertically along the bottom surface of their respective bottom surfaces, can be connected to each of recovery containers 432a, 432b, and 432c. Each of the recovery lines 434a, 434b, and 434c can discharge the introduced treatment liquid through each of the recovery containers 432a, 432b, and 432c. The discharged treatment liquid can be reused using an external treatment liquid regeneration system (not shown).

[0095] The processing container 430 can be coupled to the lifting / lowering member 436. The lifting / lowering member 436 can change the position of the processing container 430 along a third direction Z. The lifting / lowering member 436 can be a drive device for moving the processing container 430 in the up / down direction. When performing liquid processing and / or heat treatment on the substrate M, the lifting / lowering member 436 can move the processing container 430 in the up direction. When the substrate M is fed into or removed from the internal space, the lifting / lowering member 436 can move the processing container 430 in the down direction.

[0096] The liquid supply unit 440 can supply liquid to the substrate M. The liquid supply unit 440 can supply processing liquid for liquid treatment of the substrate M. The liquid supply unit 440 can supply processing liquid to the substrate M supported by the support unit 420. In an embodiment, the liquid supply unit 440 can supply processing liquid to the substrate M, which has a first pattern formed within a plurality of cells CE and a second pattern P2 formed on the exterior of the area where the cells CE are formed.

[0097] The processing liquid can be an etching solution or a rinsing solution. The etching solution can be a chemical. The etching solution can etch patterns formed on the substrate M. The etching solution can also be called an etching liquid. The etching solution can be a liquid containing a mixture of ammonia, water, and additives, as well as a solution including hydrogen peroxide. The rinsing solution can clean the substrate M. The rinsing solution can be a known chemical liquid.

[0098] refer to Figure 5 The liquid supply unit 440 may include a nozzle 441, a fixture 442, a rotating shaft 443, and a rotating member 444. The nozzle 441 supplies the processing liquid to the substrate M supported by the support unit 420. One end of the nozzle 441 may be connected to the fixture 442, and the other end of the nozzle may extend from the fixture 442 toward the substrate M. The nozzle 441 may extend from the fixture 442 in a first direction X.

[0099] Nozzle 411 may include a first nozzle 411a, a second nozzle 411b, and a third nozzle 411c. Any one of the first nozzle 411a, the second nozzle 411b, or the third nozzle 411c can supply chemical C in the aforementioned treatment liquid. Furthermore, another of the first nozzle 411a, the second nozzle 411b, or the third nozzle 411c can supply rinsing fluid R in the aforementioned treatment liquid. The last of the first nozzle 411a, the second nozzle 411b, or the third nozzle 411c can supply a different type of chemical C than the chemical C supplied by the other of the first nozzle 411a, the second nozzle 411b, or the third nozzle 411c.

[0100] The fixing body 442 can fix and support the nozzle 441. The fixing body 442 can be connected to the rotating shaft 443, which rotates in the third direction Z, via the rotating member 444. When the rotating member 444 rotates the rotating shaft 443, the fixing body 442 can rotate about the third direction Z. Therefore, the outlet of the nozzle 441 can move between a liquid supply position and a standby position, where the processing liquid is supplied to the substrate M and the standby position is where the processing liquid is not supplied to the substrate M.

[0101] Heating unit 450 can heat substrate M. Heating unit 450 can heat a portion of substrate M. Heating unit 450 can heat a specific area of ​​substrate M. Heating unit 450 can heat substrate M on which a liquid film has been formed by supplying chemical C. Heating unit 450 can heat a pattern formed on substrate M. Heating unit 450 can heat some patterns formed on substrate M. Heating unit 450 can heat either the first pattern P1 or the second pattern P2. For example, heating unit 450 can heat the second pattern P2 of the first pattern P1 and the second pattern P2. In an embodiment, heating unit 450 can heat the second pattern P2 by irradiating the second pattern P2 with laser L.

[0102] Figure 6 It shows Figure 4 The heating unit body, laser irradiation module, and camera module. (Reference) Figure 6 The heating unit 450 may include a body 451, a moving module, a laser irradiation module 460, and a camera module. The moving module may include a driver 453 and a guide rail R. The camera module may include an image module 470 and an optical module 480.

[0103] The body 451 may be a container having mounting space therein. The body 451 may be provided with a laser illumination module 460, an image module 470, and an optical module 480, described later. The body 451 may include a laser illuminator 452. Laser L emitted by the laser illumination module 460 (described later) can be emitted onto the substrate M via the laser illuminator 452. Furthermore, light irradiated by the illumination member 472 (described later) can also be provided via the laser illuminator 452. Additionally, image imaging by the image acquisition member 471 (described later) can be performed via the laser illuminator 452.

[0104] The driver 453 may be a motor. In an embodiment, the driver 453 may be configured as a linear motor. The driver 453 may be configured as a known motor providing driving force. The driver 453 may be connected to the body 451. The driver 453 may move the body 451 in a transverse direction orthogonal to the longitudinal direction of the body 451. The driver 453 may move the body 451 along a first direction X and / or a second direction Y. The driver 453 may move the laser irradiator 452, described later, between a standby position, where the laser irradiator 452 is not performing a process, and a heated position, where the laser irradiator 452 irradiates the substrate M with laser L. Furthermore, the driver 453 may move the body 451 in a third direction Z.

[0105] The guide rail R has a length direction that can move along a first direction. A driver 453 is positioned on the guide rail R. The driver 453, positioned on the guide rail R, can move along the guide rail R in the first direction X. The body 451 connected to the driver 453 can move in the first direction X. Therefore, a laser irradiator 452, located at the end of the body 451 opposite to the driver 453, can move in the first direction X.

[0106] The second actuator 455 can be any known device for generating power, such as a motor, pneumatic cylinder, hydraulic cylinder, or solenoid. The second actuator 455 can be connected to the body 451. The second actuator 455 can be connected to a shaft (not shown). The shaft (not shown) can move the body 451 in the second direction Y by receiving the driving force generated by the second actuator 455. Therefore, the laser irradiator 452 can move in the second direction Y. The second actuator 455 can move the laser irradiator 452 between a standby position (where the laser irradiator 452 is not performing a process, as described later) and a heating position (where the laser irradiator 452 irradiates the substrate M with laser L).

[0107] Figure 6 It shows Figure 4 The heating unit consists of the main body, the laser irradiation module, and the camera module. Figure 7 yes Figure 6 A top view of the image module. (Reference) Figure 6 and Figure 7 The laser irradiation module 460 can be mounted on the main body 451. The camera module can be mounted on the main body 451.

[0108] The laser irradiation module 460 may include a laser irradiation unit 461, a beam expander 462, and a tilting member 463. The laser irradiation unit 461 can irradiate a laser L. The laser irradiation unit 461 can emit a laser L with straightness. The shape / profile of the laser L emitted by the laser irradiation unit 461 can be adjusted by the beam expander 462. For example, the diameter of the laser L emitted by the laser irradiation unit 461 can be changed by the beam expander 462. The diameter of the laser L emitted by the laser irradiation unit 461 can be expanded or reduced by the beam expander 462.

[0109] The tilting member 463 can tilt the irradiation direction of the laser L emitted by the laser irradiation unit 461. For example, the tilting member 463 can rotate the laser irradiation unit 461 based on an axis to tilt the irradiation direction of the laser L irradiated by the laser irradiation unit 461. The tilting member 463 may include a motor.

[0110] The camera module may include an image module 470 and an optical module 480. The image module 470 can monitor the laser L emitted by the laser irradiation unit 461. The image module 470 may include an image acquisition member 471, an illumination member 472, a first reflector 473, and a second reflector 474. The image acquisition member 471 can acquire images of the substrate M and / or the monitoring target 491 of the error checking unit 490, described later. The image acquisition member 471 may be a camera. The image acquisition member 471 can acquire images including those of points illuminated by the laser L emitted by the laser irradiation unit 461. The image module 470 can transmit the images acquired by the image acquisition member 471 to the controller 30. The image module 470 can acquire images displayed on the monitoring target 491 by the laser L emitted from the laser irradiator 452, described later, and transmit the acquired images to the controller 30.

[0111] The illumination component 472 can provide light, thereby facilitating image acquisition by the image acquisition component 471. The light provided by the illumination component 472 can be reflected sequentially along the first reflector 473 and the second reflector 474.

[0112] Viewed from above, the optical module 480 may have a coaxial line connecting the illumination direction of the laser L illuminated by the laser illumination unit 461, the imaging direction of the image acquisition member 471, and the illumination direction of the light provided by the illumination member 472. The illumination member 472 can transmit light to the area illuminated by the laser L by the optical module 480. Furthermore, the image acquisition member 471 can acquire images in real time, such as images / photographs of the area illuminated by the laser L. The optical module 480 may include a first reflective member 481, a second reflective member 482, and a lens 483.

[0113] The first reflective member 481 can change the irradiation direction of the laser L emitted by the laser irradiation unit 461. For example, the first reflective member 481 can change the irradiation direction of the laser L irradiated in the horizontal direction to a vertically downward direction. In addition, the laser L refracted by the first reflective member 481 can pass through the lens 483 and the laser irradiator 452 in sequence, and can be transmitted to the substrate M to be processed or to the monitoring target 491 described later.

[0114] The second reflective member 482 can change the imaging direction of the image acquisition member 471. For example, the second reflective member 482 can change the imaging direction of the image acquisition member 471 in the horizontal direction to the vertically downward direction. In addition, the second reflective member 482 can change the illumination direction of the illumination member 472, which passes through the first reflector 473 and the second reflector 474 in sequence, from the horizontal direction to the vertically downward direction.

[0115] Furthermore, the first reflective member 481 and the second reflective member 482 can be positioned at the same location when viewed from above. The first reflective member 481 and the second reflective member 482 can be configured such that the imaging direction coincides with the laser path. Furthermore, the second reflective member 482 can be positioned above the first reflective member 481. Furthermore, the first reflective member 481 and the second reflective member 482 can be tilted at the same angle.

[0116] Figure 8 It shows Figure 4 Error checking unit and support unit for the liquid handling chamber. Figure 9 yes Figure 8 Top view of the error checking unit. (Reference) Figure 8 and Figure 9 The error checking unit 490 can check whether an error occurs between the irradiation position of the laser L and the preset target position TP. For example, the error checking unit 490 can be disposed in the internal space of a housing (not shown). Furthermore, when the laser irradiator 452 is in the aforementioned standby position, the error checking unit 490 can be installed in the area below the laser irradiator 452. The error checking unit 490 may include a monitoring target 491, a plate 492, and a support frame 493. The plate 492 and the support frame 493 can be configured as a standby port, which provides space for the laser irradiator 452 to standby. The standby port is located at the standby position of the laser irradiator 452. Therefore, when viewed from above, the plate 492 and the support frame 493 can be positioned at the standby position.

[0117] The detection target 491 can be referred to as a global coordinate system. A preset target position TP can be marked on the monitoring target 491. Furthermore, the monitoring target 491 can include a scale to check the error between the target position TP and the illumination position irradiated by the laser L. The monitoring target 491 can have an origin corresponding to the center of the laser irradiator 452 positioned above the standby port. The monitoring target 491 can also have an origin corresponding to the center of the light emitted from the laser irradiator 452 positioned above the standby port.

[0118] The monitoring target 491 can be mounted on the plate 492. The plate 492 can be supported by the support frame 493. The height of the monitoring target 491, defined by the plate 492 and the support frame 493, can be the same as the height of the substrate M supported by the support unit 420. For example, the height from the bottom surface of the housing (not shown) to the top surface of the monitoring target 491 can be the same as the height from the bottom surface of the housing (not shown) to the top surface of the substrate M supported by the support unit 420. This is so that the height of the laser irradiator 452 matches the height of the laser irradiator 452 when the substrate M is heated, when the error is checked using the error checking unit 490.

[0119] When the irradiation direction of the laser L irradiated by the laser irradiation unit 461 is slightly deformed relative to the third direction Z, the irradiation position of the laser L may change according to the height of the laser irradiation unit 461. Therefore, the monitoring target 491 can be set at the same height as the substrate M supported by the support unit 420.

[0120] The substrate processing method according to an embodiment of the present invention will be described in detail below. The substrate processing method described below can be performed by the liquid processing chamber 400 described above. Furthermore, the controller 30 can control the components of the liquid processing chamber 400 so that the liquid processing chamber 400 can perform the substrate processing method described below. For example, the controller 30 can generate a control signal for controlling at least one of the support unit 420, the rising / falling member 436, the liquid supply unit 440, and the heating unit 450, so that the components of the liquid processing chamber 400 can perform the substrate processing method described below.

[0121] Figure 10 A flowchart illustrating a substrate processing method according to an embodiment of the present invention is provided. (Reference) Figure 10 The substrate processing method according to the embodiment of the present invention may include a substrate feeding step S10, a process preparation step S20, a position correction step S30, an etching step S40, a rinsing step S50, and a substrate removal step S60.

[0122] In the substrate feeding step S10, the door can be opened at the feed / remove port formed on the housing (not shown). Furthermore, in the substrate feeding step S10, the transfer robot 320 can place the substrate M onto the support unit 420. With the transfer robot 320 placing the substrate M onto the support unit 420, the lifting / lowering member 436 can lower the position of the processing container 430.

[0123] Figure 11 It shows in Figure 10 In the process preparation step, the substrate processing device checks the error between the laser irradiation position and the preset target position. (Reference) Figure 11 After the substrate M is fed in, the process preparation step S20 can be performed. In process preparation step S20, it can be confirmed whether the substrate M is accurately placed on the support pin 422. In process preparation step S20, the position of the substrate M can be confirmed. In process preparation step S20, it can be confirmed whether there is an error in the irradiation position of the laser L irradiating the substrate M. For example, in process preparation step S20, the laser irradiation module 460 can irradiate the test laser L onto the monitoring target 491 of the error checking unit 490.

[0124] The image of the laser L projected onto the monitoring target 491 can be acquired by the image acquisition component 471. The position information of the laser irradiation module 460 at its standby position can be obtained from the acquired image acquired by the image acquisition component 471. The position information of the laser L emitted from the laser irradiator 452 can be obtained from the acquired image.

[0125] In the implementation scheme, when the laser L emitted from the laser irradiator 452 is not located at the origin of the monitoring target 491, it can be determined that deformation has occurred at the laser irradiation unit 461. When the laser irradiates the preset target position TP of the monitoring target 491, it is determined that no deformation has occurred at the laser irradiation unit 461, and the following position correction step S30 can be performed.

[0126] Furthermore, the sum of the movement of the laser irradiator 452 from the standby position described above to the specific pattern positioned at the heating position of the irradiating laser L can be calculated based on the position information of the test laser L calculated from the acquired image. In an embodiment, the movement of the laser irradiator 452 in the first direction X and the movement of the second pattern P2 from the standby position to the heating position in the second direction Y can be calculated separately. When the movement of the laser irradiator 452 in the first direction X or the movement in the second direction Y differs from a preset value, it can be determined that the position of the laser irradiator 452 has been deformed.

[0127] Furthermore, the diameter information of the test laser L, calculated from the acquired image, can also be obtained. Based on the obtained diameter information of the test laser L, information about the laser L irradiated from the laser irradiator 542 can be obtained. For example, when the acquired image of the laser L is outside the diameter range of a predetermined range, it can be determined that a problem has occurred in the beam expander 462.

[0128] Figure 12 and Figure 13 To demonstrate the execution Figure 10 A diagram showing the state of the substrate processing apparatus during the position correction step. (Reference) Figure 12 and Figure 13 The position correction step S30 can move a specific pattern formed on the substrate M to a heating position for irradiating the laser L. The heating position can be one of four equally divided regions where the substrate M is supported on the support unit 420. In an embodiment, when the processing position is divided into four equal parts for processing the substrate supported on the support unit, the heating position of the laser irradiator 452 can be sequentially positioned in the fourth quadrant A4 and the first quadrant A1 in the first direction X and / or the second direction Y of the movement from the standby position to the processing position. Furthermore, when the third quadrant A3 is positioned in a direction perpendicular to the fourth quadrant A4, the heating position of the laser irradiator can be located within the fourth quadrant A4, and when the second quadrant A2 is positioned in an upward direction perpendicular to the first quadrant, the heating position of the laser irradiator can be located within the fourth quadrant. In other words, the heating position can be the region where the movement of the laser irradiator 452 is minimal when it moves from the standby position to the processing position.

[0129] In the position correction step S30, the second pattern P2, one of the first pattern P1 and the second pattern P2 formed on the substrate M, is moved to the heating position. In the position correction step S30, the support unit 420 rotates such that the second pattern P2 is positioned within the fourth quadrant A4. In one embodiment, when the second pattern P2 is positioned within the first quadrant A1, the support unit 420 rotates clockwise to position the second pattern P2 within the fourth quadrant A4. In another embodiment, when the second pattern P2 is positioned within the third quadrant A3, the support unit 420 rotates counterclockwise to position the second pattern P2 within the fourth quadrant A4.

[0130] In etching step S40, the pattern formed on the substrate M can be etched. In etching step S40, etching can be performed relative to the pattern formed on the substrate M such that the critical dimensions of the first pattern P1 and the second pattern P2 coincide. Etching step S40 can be a critical dimension correction process for correcting the critical dimension difference between the first pattern P1 and the second pattern P2 described above. Etching step S40 may include a liquid treatment step S41 and a heating step S42.

[0131] Figure 14 It shows the method for execution Figure 10 The state of the substrate processing apparatus during the liquid processing step. (Reference) Figure 14 The liquid processing step S41 can be the step where the liquid supply unit 440 supplies the etchant, which is the chemical C, to the substrate M. In the liquid processing step S41, the support unit 420 can rotate the substrate M. However, the inventive concept is not limited to this, and in the liquid processing step S41, the support unit 420 may not rotate the substrate M. The amount of chemical C supplied at the liquid processing step S41 can be sufficient to form a puddle of the chemical C supplied to the substrate M. For example, the amount of chemical C supplied in the liquid processing step S41 can cover the entire upper surface of the substrate M, but it can also be supplied to such an extent that the amount of chemical C does not flow downwards, or even if the chemical C flows downwards from the substrate M, it will not be excessive. If necessary, the etchant can also be supplied to the entire upper surface of the substrate M while the nozzle 441 changes its position. After the liquid supply unit 440 supplies the chemical C to the substrate M, the support unit 420 may not rotate. The support unit 420 may stop to form a puddle of the chemical C supplied to the substrate M.

[0132] Figure 15 and Figure 16 To illustrate the use of execution Figure 10 A diagram showing the state of the substrate processing apparatus during the position heating step. (Reference) Figure 15 and Figure 16 In heating step S42, the substrate M can be heated by irradiating it with laser L. In heating step S42, heating unit 450 can heat the substrate M on which a liquid film is formed by irradiating it with laser L. In heating step S42, laser irradiation module 460 can heat the substrate M by irradiating it with laser L onto the substrate M on which a liquid film has been formed by supplying chemical C.

[0133] In heating step S42, laser L can irradiate a specific area of ​​substrate M. In heating step S42, laser L can irradiate a heated position. In heating step S42, laser irradiation module 460 can move from a standby position to a heated position to irradiate the heated position with laser L. In an embodiment, in heating step S42, laser irradiator 452 can move to the fourth quadrant A4 (i.e., the heated position) to emit laser L toward the second pattern P2 located in the fourth quadrant A4. The temperature of the specific area irradiated by laser L can be increased. Therefore, the etching degree of chemical C in the area irradiated by laser L can be increased. Furthermore, in heating step S42, laser L can irradiate either the first pattern P1 or the second pattern P2. For example, laser L can be emitted only toward the second pattern P2 of the first pattern P1 and the second pattern P2. Therefore, the etching capability of chemical C relative to the second pattern P2 is improved. Therefore, the critical size of the first pattern P1 can be changed from a first width (e.g., 69 nm) to a target critical size (e.g., 70 nm). Furthermore, the critical size of the second pattern P2 can be changed from the second width (e.g., 68.5 nm) to the target critical size (e.g., 70 nm). In other words, by improving the etching capability relative to certain regions of the substrate M, the critical size deviation of the pattern formed on the substrate M can be minimized.

[0134] Furthermore, according to the embodiment of the present invention, the moving distance of the laser irradiation module 460 can be minimized by pre-moving the second pattern P2 to the heating position of the irradiating laser L. Therefore, the moving stroke of the laser irradiation module 460 can be minimized, thereby simplifying the structure of the heating unit 450. Thus, the structure of the liquid processing chamber 400 can be simplified. Moreover, by moving only the laser irradiator 452 by the minimum distance, the changes in the laser irradiation module 460 in the form of light or the deformation of the position of the irradiated light that may occur during the process of moving the laser irradiator 452 can be minimized.

[0135] In the rinsing step S50, process byproducts generated in the etching step S40 can be removed from the substrate M. In the rinsing step S50, rinsing fluid R can be supplied to the rotating substrate M to remove process byproducts formed on the substrate M. In order to dry the rinsing fluid R remaining on the substrate M as needed, the support unit 420 can rotate the substrate M at high speed to remove the rinsing fluid R remaining on the substrate M.

[0136] In substrate removal step S60, the processed substrate M can be removed from the internal space 412. In substrate removal step S60, the door can be opened at the feed / removal port formed on the housing (not shown). Furthermore, in substrate removal step S60, the transfer robot 320 can unload the substrate M from the support unit 420 and remove the unloaded substrate M from the internal space 412.

[0137] In the embodiments of the inventive concept described above, the etching rate of the second pattern P2 is improved at a substrate M having a first pattern P1 and a second pattern P2, where the first pattern is a monitoring pattern for monitoring the exposure pattern and the second pattern is a condition setting pattern for processing the substrate. However, unlike this, the functions of the first pattern P1 and the second pattern P2 may differ from those described in the above embodiments of the inventive concept. Furthermore, according to embodiments of the inventive concept, only one of the first pattern P1 or the second pattern P2 is provided, and the etching rate of one of the first pattern P1 or the second pattern P2 can be improved. Moreover, according to embodiments of the inventive concept, the same approach can be applied to improve the etching rate of specific areas on a substrate (e.g., a wafer or glass, but not a photomask).

[0138] The effects of this invention are not limited to those described above, and those skilled in the art to which this invention pertains can clearly understand the effects not mentioned from the specification and drawings.

[0139] Although preferred embodiments of the inventive concept have been illustrated and described so far, the inventive concept is not limited to the specific embodiments described above, and it should be noted that those skilled in the art to which the inventive concept pertains can implement the inventive concept in various ways without departing from the essence of the inventive concept claimed in the claims, and modifications should not be interpreted separately from the technical spirit or prospect of the inventive concept.

Claims

1. A mask processing apparatus, the mask processing apparatus comprising: A support unit configured to support and rotate a mask, the mask having a first pattern and a second pattern, the first pattern being within a plurality of cells of the mask, and the second pattern being in the outer region of the plurality of cells; A heating unit, comprising a laser irradiation module and a moving module, wherein the laser irradiation module has a laser irradiator for irradiating the second pattern with laser light, and the moving module is configured to change the position of the laser irradiation module; A controller configured to control the support unit and the heating unit; as well as A standby port, the standby port having the laser irradiator positioned in a standby position, and Specifically, when the processing position is divided into four equal parts from the first quadrant to the fourth quadrant based on the center of the mask, the laser irradiator is positioned in the fourth quadrant and the first quadrant in the direction of linear movement from the standby position to the processing position, in the third quadrant in the direction perpendicular to the fourth quadrant, and in the second quadrant in the direction perpendicular to the first quadrant. The controller controls the rotation of the support unit, thereby positioning the second pattern in the fourth quadrant. The standby port is provided with a monitoring target, which has an origin that matches the center of the laser irradiator when viewed from above.

2. The mask processing apparatus according to claim 1, wherein, The controller controls the heating unit so that the laser irradiator moves from the standby position to an irradiation position corresponding to the second pattern located in the fourth quadrant, and the laser irradiates the second pattern from the irradiation position.

3. The mask processing apparatus according to claim 2, wherein, The moving module moves the laser irradiator in a first direction horizontal to the ground and in a second direction perpendicular to the first direction and horizontal to the ground. The fourth quadrant is the region from the standby position to the irradiation position that minimizes the sum of the movement of the laser irradiator in the first direction and the movement in the second direction.

4. The mask processing apparatus according to claim 1, wherein, The heating unit also includes a camera module, in which an image is acquired from the laser irradiated by the laser and displayed on the monitoring target, and the acquired image is transmitted to the controller.

5. The mask processing apparatus according to claim 4, wherein, The controller obtains the position information of the laser from the image and calculates the amount of movement of the laser irradiator from the standby position to the second pattern positioned at the irradiation position based on the position information.

6. The mask processing apparatus according to claim 4, wherein, The controller obtains the diameter information of the laser from the image, and acquires information about the laser irradiated from the laser irradiator based on the diameter information of the laser.

7. The mask processing apparatus according to claim 1, wherein, The first quadrant, the second quadrant, the third quadrant, and the fourth quadrant are positioned sequentially in a counterclockwise direction.

8. The mask processing apparatus according to claim 1, further comprising: A liquid supply unit configured to supply processing liquid to the mask supported on the support unit; as well as A container having a processing space for processing the mask and providing a recovery path for recovering the processed liquid, and The support unit thereon supports the mask in the processing space.

9. The mask processing apparatus according to any one of claims 1 to 8, wherein the controller controls the heating unit to minimize the critical size of the first pattern and the critical size of the second pattern by irradiating the laser relative to the second pattern.

10. The mask processing apparatus according to any one of claims 1 to 8, wherein, The first pattern provided to each cell is a monitoring pattern of the exposure pattern formed at the cell, and the second pattern is a condition setting pattern of the mask processing device.

11. A substrate processing apparatus, the substrate processing apparatus comprising: A support unit configured to support and rotate a substrate having a specific pattern formed thereon; A heating unit configured to heat the pattern, the heating unit including a laser irradiator; A controller configured to control the support unit and the heating unit; as well as A standby port, the standby port having the laser irradiator positioned in a standby position, and The controller controls the support unit to move the pattern to the heating position by rotating the substrate, and controls the heating unit to move between the standby position and the heating position; and The standby port is provided with a monitoring target, which has an origin that matches the center of the laser irradiator when viewed from above.

12. The substrate processing apparatus according to claim 11, wherein, When the processing position is divided into four equal parts from the first quadrant to the fourth quadrant based on the center of the substrate, the heating unit is positioned in the fourth quadrant and the first quadrant in the direction of linear movement from the standby position to the processing position, in the third quadrant in the direction perpendicular to the fourth quadrant, and in the second quadrant in the direction perpendicular to the first quadrant. The heating position is the position of the pattern when the pattern is positioned in the fourth quadrant.

13. The substrate processing apparatus according to claim 12, wherein, The heating unit moves in a first direction horizontal to the ground and in a second direction perpendicular to the first direction and horizontal to the ground. The fourth quadrant is the region from the standby position to the irradiation position where the sum of the movement of the heating unit in the first direction and the movement in the second direction is minimized.

14. A substrate processing method for etching a substrate, the substrate having a first pattern and a second pattern, the second pattern being different from the first pattern formed on the substrate, the substrate processing method comprising: The process preparation step confirms whether there is an error in the irradiation position of the laser irradiating the substrate; wherein, the process preparation step includes confirming whether the laser emitted from the laser irradiator positioned in the standby position is located at the origin of the monitoring target. A position correction step, wherein the position correction step moves the second pattern to the irradiation position; A liquid treatment step, wherein the liquid treatment step supplies an etching solution onto the substrate; and The heating step involves irradiating a second pattern moved to the irradiation position with the laser while the etching solution remains on the substrate. Specifically, when the processing position is divided into four equal parts from the first quadrant to the fourth quadrant based on the center of the substrate, and when the heating unit is positioned in the fourth quadrant and the first quadrant in a straight line moving from the standby position to the processing position, in the third quadrant in a direction perpendicular to the fourth quadrant, and in the second quadrant in a direction perpendicular to the first quadrant, the irradiation position is the position corresponding to the second pattern positioned in the fourth quadrant.

15. The substrate processing method according to claim 14, wherein, The fourth quadrant is the region in which the heating unit moves the least from the standby position to the irradiation position.

16. The substrate processing method according to claim 15, wherein, The position correction step involves rotating the substrate to move the second pattern to the fourth quadrant.

17. The substrate processing method according to claim 16, wherein, In the heating step, the heating unit moves from the standby position to the irradiation position corresponding to the second pattern located in the fourth quadrant, and irradiates the second pattern from the irradiation position with the laser.

18. The substrate processing method according to any one of claims 14 to 17, the substrate processing method further comprising performing the process of minimizing the deviation between the critical dimension of the first pattern and the critical dimension of the second pattern by irradiating the laser relative to the second pattern.

19. The substrate processing method according to any one of claims 14 to 17, wherein, The first pattern is a monitoring pattern of an exposure pattern formed on the substrate, and the second pattern is a condition setting pattern for processing the substrate.

Images