Monolithically integrated HEMT terahertz detector array structure and its applications

Abstract

The present invention discloses a monolithic integrated HEMT terahertz detector array structure and its application. The terahertz detector array structure comprises multiple terahertz detection units arranged in an array. Each terahertz detection unit includes a terahertz detector, an amplifier module, and a switch module. The terahertz detector is electrically connected to the amplifier module and the switch module. The amplifier module is used to amplify the response signal generated by the terahertz detection unit and output it through the switch module. The present invention integrates the terahertz detector, amplifier module, and switch module on a single terahertz detector array chip through an all-HEMT process, achieving a high-gain, high-bandwidth, low-noise terahertz detector, improving detector sensitivity, and saving costs.

Description

Technical Field

[0001] The present invention relates to a monolithic integrated HEMT terahertz detector array structure and application thereof, and belongs to the field of wireless communications. Background Art

[0002] Terahertz detector arrays are core components in terahertz body security screening, nondestructive testing, radar imaging, and communication systems. The sensitivity of the terahertz detector array determines key performance parameters such as signal-to-noise ratio, range, and bandwidth for these applications. The array size and pixel size determine the field of view and spatial resolution of imaging applications, as well as the overall bandwidth and beam characteristics of communication receivers.

[0003] When the pixel detectors that make up the array are direct detectors, sensing only the intensity of the terahertz wave, the detector array produces an image of the intensity distribution. When the pixel detectors are heterodyne detectors, the detector array can not only produce an image of the terahertz light intensity distribution, but also an image of the terahertz wave phase distribution. Heterodyne detector arrays are key to achieving three-dimensional imaging in terahertz body security inspections, nondestructive testing, and radar applications, as well as frequency-division multiplexing modulation and demodulation in terahertz communication applications.

[0004] When terahertz detectors are used for quasi-optical imaging, direct detector arrays have the characteristics of simple structure because they do not require local oscillator signals. Figure 1-Figure 3 The HEMT detector array chip 1 and the CMOS readout circuit chip 6 are flip-chip soldered together for interconnection and integration. The HEMT detector array chip 1 only integrates the detector units 2 composed of HEMTs, while the switches and low-noise amplifiers are integrated into the readout circuit chip 6. A direct detector array can also be implemented using a full CMOS process, where the detectors and their readout circuits are simultaneously integrated on the CMOS chip to form a more compact integrated chip.

[0005] When terahertz detectors are used for FMCW radar imaging, the coupling of the local oscillator signal with the direct detector array will be difficult. Figure 1-Figure 3 In the direct detector array solution shown, the local oscillator signal can only be coupled to the detector array from the front of the detector array chip 1, along with the measured terahertz wave. This requires a quasi-optical beam combining structure, often necessitating the use of a beam splitter, which inevitably results in light loss. For fully CMOS integrated direct detector arrays, quasi-optical coupling of the local oscillator signal can also be used, but this also results in inevitable light loss.

[0006] Currently, some technologies integrate a local oscillator (LO) signal source and its waveguide or transmission line on a CMOS chip to evenly distribute the LO signal source's power to each pixel detector. However, these technologies face challenges such as difficulty exceeding 400 GHz for LO frequencies, low LO power, high LO signal source power consumption, and significant transmission power distribution losses. Specifically, fully CMOS-integrated heterodyne detector array chip structures present the following challenges: 1) The size of the detector units in the array must typically be less than half the wavelength of the terahertz wave being measured to achieve high spatial resolution and eliminate array beam sidelobes. However, integrating the LO terahertz wave coupling structure, the measured terahertz wave coupling structure, the detector bias circuit, and the low-noise amplifier for the detector's intermediate frequency (IF) output within a confined space less than half a wavelength is extremely difficult. 2) CMOS process technology can achieve detection in the low-frequency range of terahertz waves (less than 400 GHz). However, in the high-frequency range of terahertz waves, the higher the LO signal generator frequency, the lower the power and efficiency, thus limiting the sensitivity of the heterodyne detector and resulting in a significant power density. Based on the CMOS process solution, it is currently impossible to realize a heterodyne detector array chip with good performance and a frequency above 400 GHz. Summary of the Invention

[0007] The main purpose of the present invention is to provide a monolithic integrated HEMT terahertz detector array structure and its application, which overcomes the shortcomings of the prior art.

[0008] To achieve the aforementioned object of the invention, the technical solutions adopted by the present invention include:

[0009] An embodiment of the present invention provides a monolithic integrated terahertz detector array structure, which includes: a plurality of terahertz detection units arranged in an array; the terahertz detection units include a terahertz detector, an amplifier module and a switch module, the terahertz detector is electrically connected to the amplifier module and the switch module, and the amplifier module is used to amplify the response signal generated in the terahertz detection unit and output it through the switch module.

[0010] Furthermore, the terahertz detector, amplifier module and switch module are all HEMT devices.

[0011] Furthermore, the source of the terahertz detector is connected to a first voltage, the gate is connected to a second voltage, and the drain is electrically connected to the gate of the amplifier module;

[0012] The source of the amplifier module is connected to the second voltage, the drain is connected to the power supply voltage via the load of the amplifier module, and is also electrically connected to the source of the switch module;

[0013] The gate of the switch module is connected to the row selection signal, the drain is grounded via the column load, and the switch module outputs the response signal in the terahertz detection unit.

[0014] Furthermore, the first voltage and the second voltage are both negative voltages, and the power supply voltage is a positive voltage.

[0015] Furthermore, the first voltage, the second voltage, and the power supply voltage are configured to place the terahertz detector at an optimal operating point and enable the amplifier module to have a maximum gain output.

[0016] An embodiment of the present invention further provides a terahertz detector array chip, comprising the above-mentioned monolithic integrated terahertz detector array structure, wherein a plurality of terahertz detection units are arranged in N rows and M columns, where M and N are both positive integers; and

[0017] Matched N rows of row selection signal input ports, M columns of response signal output ports, power supply voltage input ports, first voltage input ports and second voltage input ports; wherein

[0018] Each row selection signal input port is electrically connected to the gate of each switch module in the corresponding row through a row signal line;

[0019] Each column response signal output port is electrically connected to the drain of each switch module in the corresponding column through a column signal line;

[0020] The power supply voltage input port is electrically connected to the drain of each amplifier module in the terahertz detector array through a power supply signal line;

[0021] The first voltage input port is electrically connected to the source of each terahertz detector in the terahertz detector array through a corresponding signal line;

[0022] The second voltage input port is electrically connected to the gate of each terahertz detector and the source of each amplifier module in the terahertz detector array through corresponding signal lines.

[0023] An embodiment of the present invention further provides a terahertz detection assembly, which includes the above-mentioned terahertz detector array chip and an external amplifier unit, wherein the external amplifier unit is used to amplify the response signals output by the terahertz detection units of all columns selected in the row.

[0024] Furthermore, the external amplifier unit includes an integrated multi-channel amplifier module or a discrete multi-channel amplifier module.

[0025] Preferably, the multi-channel intermediate frequency amplifier modules are arranged in parallel.

[0026] An embodiment of the present invention also provides another terahertz detection component, which includes two or more of the above-mentioned monolithic integrated terahertz detector array structures or two or more of the above-mentioned terahertz detector array chips, and the two or more of the above-mentioned terahertz detector array structures or the above-mentioned terahertz detector array chips are cascaded.

[0027] An embodiment of the present invention further provides a terahertz detection device, which includes the above-mentioned terahertz detector array chip and a local oscillator terahertz wave signal source coupled to each other.

[0028] Furthermore, the terahertz detector array chip and the local oscillator terahertz wave signal source are waveguide coupled or quasi-optically coupled.

[0029] An embodiment of the present invention further provides a method for coupling a terahertz detector array chip with a local oscillator terahertz wave signal source, comprising:

[0030] Providing the above-mentioned terahertz detector array chip and local oscillator terahertz wave signal source;

[0031] The terahertz wave to be measured and the local oscillator terahertz wave provided by the local oscillator terahertz wave signal source are both radiated to the terahertz detector array chip and coupled.

[0032] Furthermore, the measured terahertz wave and the local oscillator terahertz wave are radiated onto the terahertz detector array chip from the same side of the terahertz detector array chip.

[0033] Alternatively, the terahertz wave to be measured and the local oscillator terahertz wave are radiated onto the terahertz detector array chip from both sides of the terahertz detector array chip respectively.

[0034] Furthermore, the coupling method specifically includes: allowing the measured terahertz wave to radiate the first surface of the terahertz detector array chip, and allowing the local oscillator terahertz wave provided by the local oscillator terahertz wave signal source to form an arrayed local oscillator terahertz wave beam that is consistent with the structural period and size of the terahertz detector array through an arrayed power divider, and radiate the second surface of the terahertz detector array chip to achieve coupling between the local oscillator terahertz wave and the terahertz detector array; wherein the first surface and the second surface are opposite to each other.

[0035] Furthermore, the coupling method specifically includes: allowing the measured terahertz wave to radiate the first surface of the terahertz detector array chip, and allowing the local oscillator terahertz wave to form a local oscillator terahertz wave beam with uniform light intensity distribution through a quasi-optical lens system or a quasi-optical reflection system, and auxiliary irradiating the second surface of the terahertz detector array chip to achieve coupling between the local oscillator terahertz wave and the terahertz detector array; wherein the first surface and the second surface are opposite to each other.

[0036] Compared with the prior art, the present invention has the following beneficial effects:

[0037] 1) By adopting the full HEMT process to realize the integrated design of terahertz detector, low-noise amplifier and switch, there is no need for a dedicated CMOS readout circuit chip and complex flip-chip welding process, which saves costs.

[0038] 2) By integrating the terahertz detector, low-noise amplifier and switch on the same chip, waveguide coupling or quasi-optical coupling between the terahertz detector array chip and the local oscillator terahertz wave signal source can be achieved, and the response signal emitted by the terahertz detector can be transmitted to the low-noise amplifier and switch and read out more quickly, greatly improving the response speed of the detector.

[0039] 3) The response signal output by the terahertz detector array chip is amplified by a multi-channel parallel amplifier outside the chip, which has sufficient space for wiring and is easy to realize a high-gain, high-bandwidth, low-noise terahertz detector.

[0040] 4) Terahertz detector arrays or terahertz detector array chips can be horizontally cascaded to form a larger-scale detector array. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments recorded in the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0042] Figure 1 It is a structural schematic diagram of a terahertz detector array in the prior art of the present invention;

[0043] Figure 2 It is a structural schematic diagram of a detection unit in a terahertz detector array in the prior art of the present invention;

[0044] Figure 3 This is a schematic diagram of the structure of the flip-chip interconnection between the terahertz detector array chip and the CMOS readout circuit in the prior art of the present invention;

[0045] Figure 4 is a schematic structural diagram of a terahertz detector array according to an embodiment of the present invention;

[0046] Figure 5 is a schematic diagram of the circuit structure of a terahertz detector array in an embodiment of the present invention;

[0047] Figure 6 is a schematic diagram of the circuit structure of a terahertz detection unit in an embodiment of the present invention;

[0048] Figure 7 It is a schematic structural diagram of the coupling between the terahertz detector array chip and the local oscillator terahertz wave signal source in an embodiment of the present invention.

[0049] Explanation of the accompanying drawings: 1. Detector array of the prior art, 2. THz detection unit of the prior art, 3. Source of the detector transistor, 4. Gate of the detector transistor, 5. Drain of the detector transistor, 6. Readout circuit chip, 7. Indium column, 8. Measured terahertz wave, 9. Local oscillator terahertz wave, 10. THz detection unit, 11. Substrate, 12. Antenna array, 13. Waveguide array, 14. External amplifier unit. DETAILED DESCRIPTION

[0050] In view of the shortcomings of the prior art, the inventors of this case, after long-term research and extensive practice, have proposed the technical solution of the present invention. The technical solution of the present invention is described clearly and completely below. Obviously, the embodiments described are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without inventive effort are within the scope of protection of the present invention.

[0051] The embodiment of the present invention provides a monolithic integrated terahertz detector array structure, such as Figure 4-Figure 5 As shown, it includes: a plurality of terahertz detection units 10 arranged in an array; the terahertz detection unit 10 includes a terahertz detector, an amplifier module and a switch module, the terahertz detector is electrically connected to the amplifier module and the switch module, and the amplifier module is used to amplify the response signal generated in the terahertz detection unit and output it through the switch module.

[0052] Furthermore, the terahertz detector, amplifier module and switch module are all realized by high electron mobility transistors, and the material of the high electron mobility transistor can be AlGaN / GaN heterojunction, AlGaAs / GaAs heterojunction or 1-3 monoatomic layers of graphene, etc.

[0053] The amplifier module includes a low-noise amplifier.

[0054] For further information, see Figure 6 , which is a circuit diagram of a terahertz detection unit 10, the source of the terahertz detector transistor T1 is connected to the first voltage V S , the gate is connected to the second voltage V G , the drain is electrically connected to the gate of the low noise amplifier transistor T2; the source of the low noise amplifier transistor T2 is connected to the second voltage V G , the drain is loaded by the amplifier R PL With the power supply voltage V D The source of the switching transistor T3 is electrically connected to the drain of the low noise amplifier transistor T2, the gate is connected to the row select signal, and the drain is connected to the column load R CL It is grounded and outputs the response signal in the terahertz detection unit 10.

[0055] Among them, the power supply voltage V D , the first voltage V G , the second voltage V S is configured to make the terahertz detector at the best working point and make the low noise amplifier have the maximum gain output, and the load R PL 1000 ohms can be used according to actual circuit requirements, and the column load R CL 100 ohms can be used, but is not limited to this.

[0056] In one embodiment, the first voltage V G , the second voltage V S Can be a negative voltage, wherein the second voltage V S The voltage V is transmitted to the gate of the low-noise amplifier transistor T2 through the terahertz detector transistor T1. The optimal operating point of the low-noise amplifier transistor T2 determines its gate voltage, that is, the second voltage V S The voltage value of the second voltage V S , which in turn controls the gain of the low noise amplifier transistor T2. S After setting the voltage value of the corresponding first voltage V G , so that the first voltage V G and the second voltage V S The difference V G -V S The turn-on voltage of the terahertz detector transistor is reached, and the terahertz detector transistor T1 is in an optimal working state, that is, the channel of the terahertz detector transistor T1 has a maximum transconductance, and the noise equivalent power of the terahertz detector transistor T1 is minimized.

[0057] Specifically, the row selection signal (ROW1, ROW2...ROWN) controls the on / off of the switching transistor T3, wherein the switching transistor T3 may be a depletion-type high electron mobility transistor. In this case, when the voltage of the row selection signal is 0V, the switching transistor T3 is turned on, and when the voltage of the row selection signal drops to a certain negative value, the switching transistor T3 is turned off. In some embodiments, the switching transistor T3 may be an enhancement-type high electron mobility transistor. In this case, when the voltage of the row selection signal is 0V, the switching transistor is turned off, and when the voltage of the row selection signal increases to a certain positive value, the switching transistor is turned on.

[0058] The embodiment of the present invention also provides a terahertz detector array chip, such as Figure 4-Figure 6As shown, it includes the above-mentioned monolithic integrated terahertz detector array structure, in which multiple terahertz detection units 10 are arranged in N rows and M columns, where M and N are both positive integers; and corresponding N rows of row selection signal input ports (IN1, IN2...INN), M columns of response signal output ports (OUT1, OUT2...OUTM), power supply voltage input port, first voltage input port and second voltage input port; wherein each row selection signal input port is electrically connected to the gate of each switch module in the corresponding row through a row signal line, each column response signal output port is electrically connected to the drain of each switch module in the corresponding column through a column signal line, the power supply voltage input port is electrically connected to the drain of each amplifier module in the terahertz detector array through the power supply signal line, the first voltage input port is electrically connected to the source of each terahertz detector in the terahertz detector array through the corresponding signal line, and the second voltage input port is electrically connected to the gate of each terahertz detector and the source of each amplifier module in the terahertz detector array through the corresponding signal line.

[0059] Furthermore, an embodiment of the present invention also provides a terahertz detection component, such as Figure 7 As shown, it includes the above-mentioned terahertz detector array chip and an external amplifier unit 14, which is used to further amplify the response signals output by the terahertz detection units 10 of all columns in a row selected by the row selection signal after being amplified inside the unit.

[0060] Furthermore, the external amplifier unit 14 includes an integrated multi-channel amplifier module or a discrete multi-channel amplifier module.

[0061] There are M multi-channel amplifier modules, which respectively correspond to the M output ports (OUT1, OUT2...OUTM) of the terahertz detector array chip. Preferably, the multi-channel amplifier modules are arranged in parallel.

[0062] It should be noted here that the terahertz detector array chip provided in this embodiment is mainly used for heterodyne detection. Therefore, the above-mentioned response signal is the intermediate frequency signal formed after the measured terahertz wave and the local oscillator terahertz wave are mixed by the terahertz detector transistor, and then the external multi-channel amplifier module correspondingly includes an intermediate frequency amplifier. The following description is all for the application of heterodyne detection, but the terahertz detector array chip of the present invention can also be used for direct detection, which will not be described in detail here.

[0063] Furthermore, an embodiment of the present invention also provides another terahertz detection component, which includes two or more of the above-mentioned monolithic integrated terahertz detector array structures or terahertz detector array chips, and the two or more of the above-mentioned terahertz detector array structures or the two or more of the above-mentioned terahertz detector array chips are cascaded to form a larger-scale terahertz detector array structure or terahertz detector array chip.

[0064] Furthermore, an embodiment of the present invention also provides a terahertz detection device, which includes the above-mentioned terahertz detector array chip and a local oscillator terahertz wave signal source coupled to each other.

[0065] The terahertz detector array chip and the local oscillator terahertz wave signal source are waveguide coupled or quasi-optically coupled.

[0066] For details, please refer to Figure 7 The local oscillator terahertz wave signal source includes a local oscillator terahertz wave waveguide array 13 and an antenna array 12. The waveguide array 13 and the antenna array 12 correspond to the terahertz detector array and are at least used to provide the local oscillator terahertz wave 9 to the detector array.

[0067] Specifically, the local oscillator terahertz wave 9 is transmitted to the corresponding antenna array 12 via the waveguide array 13 and emitted by the antenna array 12 to one surface of the terahertz detector array chip, while the measured terahertz wave 8 radiates the other surface of the terahertz detector array chip.

[0068] Furthermore, an embodiment of the present invention also provides a coupling method for a terahertz detector array chip and a local oscillator terahertz wave signal source, which includes: making the measured terahertz wave 8 and the local oscillator terahertz wave 9 provided by the local oscillator terahertz wave signal source both radiate the terahertz detector array chip and couple.

[0069] The measured terahertz wave 8 and the local oscillator terahertz wave 9 can be radiated onto the terahertz detector array chip from the same side of the terahertz detector array chip, or the measured terahertz wave 8 and the local oscillator terahertz wave 9 can be radiated onto the terahertz detector array chip from both sides of the terahertz detector array chip respectively.

[0070] In one embodiment, the measured terahertz wave 8 can be made to radiate the first surface of the terahertz detector array chip, and the local oscillator terahertz wave 9 provided by the local oscillator terahertz wave signal source can be formed into an arrayed local oscillator terahertz wave beam having the same structural period and size as the terahertz detector array through an arrayed power divider, and radiate the second surface of the terahertz detector array chip, thereby realizing the coupling of the local oscillator terahertz wave 9 and the terahertz detector array; wherein the first surface and the second surface are opposite to each other.

[0071] In another embodiment, the measured terahertz wave 8 can be made to radiate the first surface of the terahertz detector array chip, and the local oscillator terahertz wave 9 can be formed into a local oscillator terahertz wave beam with uniform light intensity distribution through a quasi-optical lens system or a quasi-optical reflection system, and auxiliary-radiate the second surface of the terahertz detector array chip, thereby realizing the coupling of the local oscillator terahertz wave 9 and the terahertz detector array; wherein the first surface and the second surface are opposite to each other.

[0072] In the above coupling scheme, the frequency of the local oscillator terahertz wave f LO and the frequency f of the terahertz wave being measured RF Phase difference intermediate frequency f IF , even if f LO =f RF ±f IF Alternatively, the local oscillator terahertz wave and the measured terahertz wave can be mixed in two harmonics or three harmonics, even if n×f LO =f RF ±f IF , n=2,3, wherein the subharmonic mixing method can utilize the local oscillator terahertz wave 9 with a frequency of 220 GHz provided by the local oscillator terahertz wave signal source, which has a power advantage of the order of 1 watt (W), and can realize the detection of terahertz waves with a maximum frequency of about 660 GHz. The local oscillator terahertz wave 9 with a frequency of 340 GHz provided by the local oscillator signal source chip has a power advantage of the order of 100 milliwatts (mW), and can even realize the detection of terahertz waves with a frequency above 1 THz. Compared with the existing technology (400 GHz), the detection capability is greatly improved.

[0073] In summary, the present invention integrates terahertz detectors, low-noise amplifiers, and switches onto a single terahertz detector array chip using an all-HEMT process. This eliminates the need for specialized CMOS readout circuitry and the complex flip-chip soldering process, significantly reducing costs. Furthermore, this all-HEMT monolithic integration design enables waveguide or quasi-optical coupling of the terahertz detector array chip with the local oscillator terahertz wave signal source, resulting in a flexible and compact heterodyne detector.

[0074] It should be understood that the technical solution of the present invention is not limited to the above-mentioned specific implementation cases. Any technical variations made according to the technical solution of the present invention without departing from the scope of protection of the purpose of the present invention and the claims shall fall within the scope of protection of the present invention.

Claims

1. A monolithic integrated terahertz detector array structure, characterized in that: include: A plurality of terahertz detection units arranged in an array; The terahertz detection unit includes a terahertz detector, an amplifier module and a switch module, all of which are HEMT devices; the amplifier module is used to amplify the response signal generated in the terahertz detection unit and output it through the switch module; the source of the terahertz detector is connected to a first voltage, the gate is connected to a second voltage, and the drain is electrically connected to the gate of the amplifier module; the source of the amplifier module is connected to the second voltage, the drain is connected to the power supply voltage via the load of the amplifier module, and is also electrically connected to the source of the switch module; the gate of the switch module is connected to a row selection signal, the drain is grounded via a column load, and the response signal in the terahertz detection unit is output.

2. The monolithic integrated terahertz detector array structure according to claim 1, characterized in that: The first voltage and the second voltage are both negative voltages, and the power supply voltage is a positive voltage.

3. The monolithic integrated terahertz detector array structure according to claim 2, characterized in that: The first voltage, the second voltage, and the power supply voltage are configured to place the terahertz detector at an optimal operating point and enable the amplifier module to have a maximum gain output.

4. A terahertz detector array chip, characterized in that: include: The monolithic integrated terahertz detector array structure according to any one of claims 1 to 3, wherein the plurality of terahertz detection units are arranged in N rows and M columns, where M and N are both positive integers; as well as Matched N rows of row selection signal input ports, M columns of response signal output ports, power supply voltage input port, first voltage input port and second voltage input port; in Each row selection signal input port is electrically connected to the gate of each switch module in the corresponding row through a row signal line; Each column response signal output port is electrically connected to the drain of each switch module in the corresponding column through a column signal line; The power supply voltage input port is electrically connected to the drain of each amplifier module in the terahertz detector array through a power supply signal line; The first voltage input port is electrically connected to the source of each terahertz detector in the terahertz detector array through a corresponding signal line; The second voltage input port is electrically connected to the gate of each terahertz detector and the source of each amplifier module in the terahertz detector array through corresponding signal lines.

5. A terahertz detection component, characterized in that: It comprises the terahertz detector array chip according to claim 4 and a matching external amplifier unit, wherein the external amplifier unit is used to amplify the response signals output by the terahertz detection units of all columns selected by the row.

6. The terahertz detection assembly according to claim 5, characterized in that: The external amplifier unit includes an integrated multi-channel amplifier module or a discrete multi-channel amplifier module.

7. A terahertz detection component, characterized in that: The invention comprises two or more monolithically integrated terahertz detector array structures according to any one of claims 1 to 3 or the terahertz detector array chip according to claim 4, and the two or more terahertz detector array structures or the two or more terahertz detector array chips are cascaded.

8. A terahertz detection device, characterized in that: It comprises the terahertz detector array chip and the local oscillator terahertz wave signal source as claimed in claim 4 which are coupled to each other.

9. The terahertz detection device according to claim 8, characterized in that: The terahertz detector array chip and the local oscillator terahertz wave signal source are waveguide coupled or quasi-optically coupled.

10. A method for coupling a terahertz detector array chip with a local oscillator terahertz wave signal source, characterized in that: include: Providing the terahertz detector array chip and local oscillator terahertz wave signal source according to claim 4; The terahertz wave to be measured and the local oscillator terahertz wave provided by the local oscillator terahertz wave signal source are both radiated to the terahertz detector array chip and coupled.

11. The coupling method according to claim 10, characterized in that: include: The measured terahertz wave and the local oscillator terahertz wave are radiated onto the terahertz detector array chip from the same side of the terahertz detector array chip. Alternatively, the terahertz wave to be measured and the local oscillator terahertz wave are radiated onto the terahertz detector array chip from both sides of the terahertz detector array chip respectively.

12. The coupling method according to claim 11, characterized in that: include: The terahertz wave to be measured is caused to radiate the first surface of the terahertz detector array chip, and the local oscillator terahertz wave provided by the local oscillator terahertz wave signal source is formed into an arrayed local oscillator terahertz wave beam having the same structural period and size as the terahertz detector array through an arrayed power divider, and radiates the second surface of the terahertz detector array chip, thereby achieving coupling between the local oscillator terahertz wave and the terahertz detector array; wherein the first surface and the second surface are opposite to each other.

13. The coupling method according to claim 11, characterized in that: include: The terahertz wave to be measured is caused to radiate the first surface of the terahertz detector array chip, and the local oscillator terahertz wave is formed into a local oscillator terahertz wave beam with uniform light intensity distribution through a quasi-optical lens system or a quasi-optical reflection system, and auxiliary-radiates the second surface of the terahertz detector array chip, thereby achieving coupling between the local oscillator terahertz wave and the terahertz detector array; wherein the first surface and the second surface are opposite to each other.

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