Method of forming a semiconductor structure
By forming a sidewall on the sidewall of the sacrificial structure in the second region during the semiconductor structure formation process and modifying the sacrificial structure in the first region, the problems of small process window and high difficulty are solved, and high-precision pattern transfer and low-difficulty manufacturing are achieved.
CN115775726BActive Publication Date: 2026-07-21SEMICON MFG INT (SHANGHAI) CORP +1
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Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SEMICON MFG INT (SHANGHAI) CORP
- Filing Date
- 2021-09-07
- Publication Date
- 2026-07-21
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Figure CN115775726B_ABST
Abstract
A method for forming a semiconductor structure includes: providing a layer to be etched, the layer to be etched including a first region and a second region; forming a plurality of first sacrificial structures on the first region and the second region; forming a first sidewall on a sidewall of the first sacrificial structure on the second region; after forming the first sidewall on the sidewall of the first sacrificial structure on the second region, modifying the first sacrificial structure on the first region to form a plurality of second sacrificial structures; after forming the second sacrificial structures, removing the first sacrificial structures; and after removing the first sacrificial structures, patterning the layer to be etched according to the second sacrificial structures on the first region and the first sidewall on the second region. The method has a large process window and low process difficulty.
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