Micro light emitting diode display device

Abstract

The application discloses a micro light emitting diode display device, which comprises a carrier plate, a first light emitting unit, a first transparent substrate, a second light emitting unit and a color separation filter layer. The first light emitting unit is arranged on the carrier plate and is configured to emit first color light. The first transparent substrate is arranged on the first light emitting unit. The second light emitting unit is arranged on the first transparent substrate and is configured to emit second color light. The color separation filter layer is arranged between the first light emitting unit and the first transparent substrate and is configured to allow the first color light to pass through and block the second color light.

Description

Technical Field

[0001] This invention relates to a miniature light-emitting diode display device. Background Technology

[0002] Miniature LED displays are one of the most common types of display devices. They have a wide range of applications, including televisions, panels, wearable devices, augmented reality (AR) devices, and virtual reality (VR) devices. A miniature LED display can be composed of multiple pixel units arranged in an array. Each pixel unit can consist of light-emitting units that emit different colors of light, and each unit can have a surrounding embankment structure to prevent light from entering adjacent units, thereby improving the color purity of the pixel unit. Summary of the Invention

[0003] Some embodiments of the present invention provide a miniature light-emitting diode display device, comprising a carrier substrate, a first light-emitting unit, a first transparent substrate, a second light-emitting unit, and a color-separating filter layer. The first light-emitting unit is on the carrier substrate and is configured to emit a first color of light. The first transparent substrate is on the first light-emitting unit. The second light-emitting unit is on the first transparent substrate and is configured to emit a second color of light. The color-separating filter layer is located between the first light-emitting unit and the first transparent substrate, and is configured to allow the first color of light to pass through while blocking the second color of light.

[0004] In some embodiments, the first light-emitting unit includes a chip and a wavelength conversion layer. The chip is on a carrier board and configured to emit a third color light. The wavelength conversion layer covers the chip and is configured to convert the third color light emitted by the chip into a first color light.

[0005] In some implementations, the first light-emitting unit includes a chip. The chip is on a carrier board and is configured to emit a first color of light.

[0006] In some implementations, the first light-emitting unit further includes an adhesive material between the chip and the color filter layer.

[0007] In some embodiments, the second light-emitting unit includes a chip and a wavelength conversion layer. The chip is located on a first transparent substrate and is configured to emit a third color light. The wavelength conversion layer covers the chip and is configured to convert the emitted third color light into a second color light.

[0008] In some embodiments, the second light-emitting unit includes a chip. The chip is located on a first transparent substrate and is configured to emit a second color of light.

[0009] In some embodiments, the micro LED display device further includes a second transparent substrate and a third light-emitting unit. The second transparent substrate is on the second light-emitting unit. The third light-emitting unit is on the second transparent substrate, and the third light-emitting unit is configured to emit a third color light, which is different from the first color light and the second color light, and a color filter layer blocks the third color light.

[0010] In some embodiments, the micro LED display device further includes a color resist layer on the second light-emitting unit, the color resist layer being configured to allow the first color light and the second color light to pass through, and to absorb the third color light.

[0011] In some embodiments, the micro LED display device further includes a first embankment structure and a second embankment structure. The first embankment structure surrounds the first light-emitting unit and the color filter layer. The second embankment structure surrounds the second light-emitting unit and the color resist layer.

[0012] In some embodiments, the micro LED display device further includes a first light-absorbing layer and a second light-absorbing layer. The first light-absorbing layer is located between a first transparent substrate and a second embankment structure. The second light-absorbing layer is located on the second transparent substrate and surrounds the third light-emitting unit.

[0013] In some embodiments, the second transparent substrate also surrounds the second light-emitting unit, and the first transparent substrate also surrounds the first light-emitting unit.

[0014] Some embodiments of the present invention relate to a display device in which light-emitting units are stacked vertically. When using a display device as described in some embodiments of the present invention, it can be ensured that the red, green, and blue light of the display device can be emitted upwards, and the area of ​​the display device on the carrier plate can be reduced, so as to accommodate more display devices, such as LED packages, in a unit area. Attached Figure Description

[0015] Figure 1A This is a cross-sectional view of a display device according to some embodiments of the present invention. Figure 1B This is a top view of a display device according to some embodiments of the present invention;

[0016] Figure 2 This is a cross-sectional view of the carrier plate and the first light-emitting unit according to some embodiments of the present invention;

[0017] Figures 3A to 3C This is a schematic diagram showing the routes of the first, second, and third colors of light in the display device.

[0018] Figure 4A This is a cross-sectional view of a display device according to some embodiments of the present invention. Figure 4B This is a top view of a display device according to some embodiments of the present invention;

[0019] Figure 5A This is a cross-sectional view of a display device according to some embodiments of the present invention. Figure 5B This is a top view of a display device according to some embodiments of the present invention;

[0020] Figure 6A This is a cross-sectional view of a display device according to some embodiments of the present invention. Figure 6B This is a top view of a display device according to some embodiments of the present invention;

[0021] Figure 7 This is a schematic diagram showing the display device mounted on the back panel in some embodiments of the present invention;

[0022] Figure 8 This is a cross-sectional view of a display device according to some embodiments of the present invention.

[0023] Symbol Explanation

[0024] 10, 20, 30, 40, 50: Miniature LED display devices

[0025] 100, 200, 300, 400, 500: Carrier board

[0026] 100L, 112L, 114L, 212L, 214L, 312L, 314L, 400L, 412L, 414L, 414M, 512L, 514L, 514M: Conductor Layer

[0027] 101A: Substrate

[0028] 101B: Buffer layer

[0029] 102: Active (Powered) Components

[0030] 103: Gate

[0031] 104: Gate dielectric layer

[0032] 105: Channel layer

[0033] 106: Dielectric layer

[0034] 107: Source / Drain Electrode

[0035] 108: Insulation layer

[0036] 112, 212, 312, 412, 512: First transparent substrate

[0037] 114, 214, 314, 414, 514: Second transparent substrate

[0038] 120, 220, 320, 420, 520: First light-emitting unit

[0039] 122, 132, 142, 222, 232, 242, 322, 332, 342, 422, 432, 442, 522, 532, 542: Chips

[0040] 124, 134, 224, 234, 424, 434, 524, 534: Wavelength conversion layer

[0041] 130, 230, 330, 430, 530: Second light-emitting unit

[0042] 140, 240, 340, 440, 540: Third light-emitting unit

[0043] 150, 250, 350, 450, 550: Color separation filter layers

[0044] 160, 260, 360, 460, 560: Color resist layer

[0045] 172, 272, 372, 472, 572: First embankment structure

[0046] 174, 274, 374, 474, 574: Second embankment structure

[0047] 180, 380, 480: Light-absorbing layer

[0048] 282, 582: First light-absorbing layer

[0049] 284, 584: Second light-absorbing layer

[0050] 324, 334: Adhesive materials

[0051] 41: Back panel

[0052] 41L: Conductive pad

[0053] 490, 590: Conductive pads

[0054] AA: Line

[0055] BB: Line

[0056] CC: Line

[0057] CM1, CM2, CM3: Conductive materials

[0058] DD: Line

[0059] H1: Height

[0060] H2: Height

[0061] L1: Primary color light

[0062] L2: Second color light

[0063] L3: Third color light

[0064] T1: Thickness

[0065] T2: Thickness

[0066] W1: Width

[0067] W2: Width Detailed Implementation

[0068] To enable those skilled in the art to further understand the present invention, preferred embodiments of the present invention are described below, and the composition and desired effects of the present invention are explained in detail with reference to the accompanying drawings.

[0069] Some embodiments of the present invention relate to a display device in which light-emitting units are stacked vertically. When using a display device as described in some embodiments of the present invention, it can be ensured that the red, green, and blue light emitted by the display device is upward, and the area of ​​the display device on the carrier board can be reduced to accommodate more pixel units per unit area. Some embodiments of the present invention are applicable to display devices using miniature light-emitting diode chips.

[0070] Figure 1A A cross-sectional view of a miniature light-emitting diode display device 10 according to some embodiments of the present invention is shown. Figure 1B A top view illustrating some embodiments of the miniature light-emitting diode display device 10 of the present invention is shown, and Figure 1A It is along Figure 1B The cross-sectional view is shown by line AA. The miniature light-emitting diode display device 10 may include a carrier plate 100, a first light-emitting unit 120, a first transparent substrate 112, a second light-emitting unit 130, a second transparent substrate 114, a third light-emitting unit 140, a color filter layer 150, and a color resist layer 160.

[0071] Figure 2 The illustration shows a cross-sectional view of a carrier plate 100 and a first light-emitting unit 120 according to some embodiments of the present invention. In some embodiments, the carrier plate 100 may be an array substrate, and the carrier plate 100 may have a substrate 101A, a buffer layer 101B, and a plurality of active elements 102. Figure 2(Taking an active element 102 as an example). A buffer layer 101B may be formed on a substrate 101A. The active element 102 may be formed on the buffer layer 101B. The active element 102 is electrically connected to the first light-emitting unit 120. The active element 102 may include a gate 103, a gate dielectric layer 104, a channel layer 105, a dielectric layer 106, and a source / drain electrode 107. The carrier board 100 may also include an insulating layer 108 covering the active element 102 and a conductive layer 100L on the insulating layer 108, the conductive layer 100L being electrically connected to the first light-emitting unit 120 and the source / drain electrode 107 of the active element 102.

[0072] Back Figure 1A In some embodiments, the first transparent substrate 112 and the second transparent substrate 114 may be array substrates similar to the carrier plate 100, and the first transparent substrate 112 and the second transparent substrate 114 respectively have an interconnect layer 100L (shown in Figure 100L). Figure 2 Similar conductive layers 112L and 114L are used. The conductive layer 112L of the first transparent substrate 112 can electrically connect the second light-emitting unit 130 to the active element in the first transparent substrate 112, and the conductive layer 114L of the second transparent substrate 114 can electrically connect the third light-emitting unit 140 to the active element in the second transparent substrate 114. In some embodiments, the first transparent substrate 112 and the second transparent substrate 114 can be glass substrates, polyimide substrates, or other suitable substrates. In some embodiments, the carrier plate 100 can be an opaque substrate; however, the present invention does not limit the carrier plate 100 to an opaque substrate. In other embodiments, the carrier plate 100 can also be a transparent substrate, such as a glass substrate, polyimide substrate, or other suitable substrate. In other embodiments, the conductive layers of the first transparent substrate 112 and the second transparent substrate 114 can be additionally extended to the carrier plate 100, so that the second light-emitting unit 130 and the third light-emitting unit 140 can be electrically connected to other active elements in the carrier plate 100 through the conductive layers, respectively. In some embodiments, the conductor layers 100L, 112L, and 114L may be made of any suitable conductive material, such as metal or indium tin oxide (ITO).

[0073] A first light-emitting unit 120 is located on a carrier plate 100 and is configured to emit a first color light L1. A first transparent substrate 112 is located on the first light-emitting unit 120. A second light-emitting unit 130 is located on the first transparent substrate 112 and is configured to emit a second color light L2. The second color light L2 is different from the first color light L1. A second transparent substrate 114 is located on the second light-emitting unit 130. A third light-emitting unit 140 is located on the second transparent substrate 114 and is configured to emit a third color light L3. The third color light L3 is different from both the first color light L1 and the second color light L2. In other words, the third light-emitting unit 140 covers the second light-emitting unit 130, and the second light-emitting unit 130 covers the first light-emitting unit 120.

[0074] Specifically, the first light-emitting unit 120 may include a chip 122 and a wavelength conversion layer 124. The chip 122 is on the carrier substrate 100 and is configured to emit a third color light L3. The wavelength conversion layer 124 covers the chip 122 and is configured to convert the third color light L3 emitted by the chip 122 into a first color light L1. The second light-emitting unit 130 may include a chip 132 and a wavelength conversion layer 134. The chip 132 is on the first transparent substrate 112 and is configured to emit the third color light L3. The wavelength conversion layer 134 covers the chip 132 and is configured to convert the third color light L3 emitted by the chip 132 into a second color light L2. The third light-emitting unit 140 may include a chip 142. The chip 142 is on the second transparent substrate 114 and is configured to emit the third color light L3. That is, the chip 122 of the first light-emitting unit 120, the chip 132 of the second light-emitting unit 130, and the chip 142 of the third light-emitting unit 140 can emit light of the same color.

[0075] In some embodiments, the first color light L1 may be red light, the second color light L2 may be green light, and the third color light L3 may be blue light. Therefore, the first light-emitting unit 120 emitting red light, the second light-emitting unit 130 emitting green light, and the third light-emitting unit 140 emitting blue light are arranged vertically upwards. Specifically, the first light-emitting unit 120 may include a blue light chip 122 and a red light wavelength conversion layer 124. The blue light chip 122 is on the carrier substrate 100. The red light wavelength conversion layer 124 covers the blue light chip 122 and is configured to convert the blue light emitted by the blue light chip 122 into red light. The red light wavelength conversion layer 124 may contain a wavelength conversion material, such as quantum dots, phosphors, or the like, to convert shorter wavelength blue light into red light. The second light-emitting unit 130 may include a blue light chip 132 and a green light wavelength conversion layer 134. The blue light chip 132 is on the first transparent substrate 112. A green light wavelength conversion layer 134 covers the blue light chip 132 and is configured to convert the blue light emitted by the blue light chip 132 into green light. The green light wavelength conversion layer 134 may contain a wavelength conversion material, such as quantum dots, phosphors, or the like, to convert shorter wavelength blue light into green light. The third light-emitting unit 140 may contain a blue light chip 142, and the blue light chip 142 is located on the second transparent substrate 114.

[0076] A color-separating filter layer 150 is positioned between the first light-emitting unit 120 and the first transparent substrate 112. The color-separating filter layer 150 is configured to allow the first color light L1 to pass through while blocking the second color light L2 and the third color light L3. A color resist layer 160 is positioned on the second light-emitting unit 130. The color resist layer 160 is configured to allow the first color light L1 and the second color light L2 to pass through while absorbing the third color light L3. In other words, the carrier plate 100, the first light-emitting unit 120, the color-separating filter layer 150, the first transparent substrate 112, the second light-emitting unit 130, the color resist layer 160, the second transparent substrate 114, and the third light-emitting unit 140 are arranged vertically from bottom to top.

[0077] The miniature LED display device 10 further includes a first embankment structure 172 and a second embankment structure 174. The second embankment structure 174 is located above the first embankment structure 172. The first embankment structure 172 surrounds the first light-emitting unit 120 and the color filter layer 150. The second embankment structure 174 surrounds the second light-emitting unit 130 and the color resist layer 160. The first embankment structure 172 can be used to reflect light from the first light-emitting unit 120, and the second embankment structure 174 can be used to reflect light from the second light-emitting unit 130. Therefore, the first embankment structure 172 and the second embankment structure 174 can ensure that the light from the first light-emitting unit 120 and the second light-emitting unit 130 is emitted upwards, and that the light from the first light-emitting unit 120 and the second light-emitting unit 130 does not enter adjacent light-emitting units. In some embodiments, the first embankment structure 172 and the second embankment structure 174 have a reflectivity of over 60% for light with wavelengths in the range of 380 nm to 780 nm, a transmittance of less than 30% for light with wavelengths in the range of 380 nm to 780 nm, and an absorption rate of less than 10% for light with wavelengths in the range of 380 nm to 780 nm. In some embodiments, the height H1 of the first embankment structure 172 and the second embankment structure 174 is between 10 micrometers and 25 micrometers.

[0078] The micro-LED display device 10 further includes a light-absorbing layer 180, which is located on the second transparent substrate 114 and surrounds the third light-emitting unit 140. When light from the second light-emitting unit 130 passes through the second transparent substrate 114, the light-absorbing layer 180 can absorb light that does not reach the third light-emitting unit 140, such as light that passes through the second transparent substrate 114 or the second embankment structure 174. Therefore, the light concentration of the micro-LED display device 10 can be ensured. In some embodiments, the light-absorbing layer 180 is made of metal. In some embodiments, the light-absorbing layer 180 has an absorption rate of over 95% for light with wavelengths in the range of 380 nm to 780 nm, and a reflectivity and transmittance of less than 5% for light with wavelengths in the range of 380 nm to 780 nm. In some embodiments, the height H2 of the light-absorbing layer 180 is between 1 micrometer and 5 micrometers.

[0079] Figures 3A to 3C A schematic diagram illustrating the paths of the first color light L1, the second color light L2, and the third color light L3 within the miniature light-emitting diode display device 10 is shown. For clarity, Figures 3A to 3C The components of the miniature light-emitting diode display device 10 are decomposed to clearly show the transmission / reflection of different colors of light between the components. For example... Figure 3AAs shown, the first light-emitting unit 120 emits a first color light L1 that rises upwards. Since the color-separating filter layer 150 is located on the first light-emitting unit 120, it allows the first color light L1 to pass through and enter the second light-emitting unit 130 located on the color-separating filter layer 150. However, the color-separating filter layer 150 cannot allow the third color light L3 (shown in the diagram) to pass through. Figure 1A The first light-emitting unit 120 (L1) allows some of the third-color light that has not been converted by the wavelength conversion material in the wavelength conversion layer 124 to be reflected, thus preventing a small amount of the third-color light from entering the second light-emitting unit 130. After the first-color light L1 enters the second light-emitting unit 130, it can further enter the third light-emitting unit 140 because the color-blocking layer 160 allows it to pass through. In some embodiments, the color-blocking filter layer 150 is a distributed Bragg reflector (DBR) with a reflectivity of over 95% and a transmittance of less than 3% and an absorptivity of less than 3% for light with wavelengths in the range of 430 nm to 470 nm (e.g., blue light) and light with wavelengths in the range of 490 nm to 560 nm (e.g., green light). For light with wavelengths in the range of 600 nm to 700 nm (e.g., red light), the reflectivity is less than 5%, the transmittance is over 95%, and the absorptivity is less than 5%. In some embodiments, the color filter layer 150 may consist of multiple pairs (e.g., 5 pairs) of sub-filter layers (each pair of sub-filter layers contains materials with different refractive indices) and the thickness T1 of each pair of sub-filter layers is 0.1 micrometers.

[0080] like Figure 3B As shown, the second-color light L2 emitted by the second light-emitting unit 130 is emitted upwards and downwards. Since the color-separating filter layer 150 is located below the second light-emitting unit 130, it can block and reflect the second-color light L2 emitted downwards from the second light-emitting unit 130, thereby increasing the upward emission of the second-color light L2. Additionally, the color-separating filter layer 150 can also block and reflect the third-color light emitted downwards from the wavelength conversion material in the wavelength conversion layer 134, preventing the third-color light from being converted into the first-color light by the wavelength conversion layer 124 below, thus preventing color crosstalk. Furthermore, the color resist layer 160 is on the second light-emitting unit 130, allowing the second-color light L2 from the second light-emitting unit 130 to pass through and enter the third light-emitting unit 140 on the color resist layer 160. Since the color resist layer 160 cannot allow the third-color light L3 (shown in…) to pass through… Figure 1AThe third color light, which has not been converted by the wavelength conversion material in the wavelength conversion layer 134, can be absorbed, preventing a small amount of the third color light in the second light-emitting unit 130 from entering the third light-emitting unit 140. In some embodiments, the color resist layer 160 is a yellow color resist, and its reflectivity for light with wavelengths in the range of 490 nm to 780 nm (e.g., green and red light) is less than 10%, its transmittance is more than 85%, and its absorptivity is less than 5%. For light with wavelengths in the range of 430 nm to 470 nm (e.g., blue light), its reflectivity is less than 5%, its transmittance is less than 3%, and its absorptivity is more than 95%. In some embodiments, the thickness T2 of the color resist layer 160 is between 5 micrometers and 15 micrometers. In some embodiments, the color resist layer 160 can also be replaced by a dispersed Bragg reflector, which allows the first color light and the second color light L2 to pass through and reflects the third color light.

[0081] like Figure 3C As shown, the third light-emitting unit 140 emits third-color light L3 upwards and downwards. Since the color resist layer 160 is located below the third light-emitting unit 140, the color resist layer 160 can absorb the third-color light L3 emitted downwards from the third light-emitting unit 140, preventing the third-color light L3 from being converted into second-color light by the wavelength conversion layer 134 below. In this way, it can be ensured that the first-color light emitted by the first light-emitting unit 120, the second-color light emitted by the second light-emitting unit 130, and the third-color light L3 emitted by the third light-emitting unit 140 are emitted upwards. The first light-emitting unit 120, the second light-emitting unit 130, and the third light-emitting unit 140 can be regarded as a pixel. Furthermore, the first light-emitting unit 120, the second light-emitting unit 130, and the third light-emitting unit 140 in the same pixel are arranged vertically upwards, so that the area of ​​the micro LED display device 10, that is, the area occupied by each pixel, can be reduced.

[0082] Figure 4A A cross-sectional view of a miniature light-emitting diode display device 20 according to some embodiments of the present invention is shown. Figure 4B A top view illustrating a miniature light-emitting diode display device 20 according to some embodiments of the present invention is shown, and Figure 4A It is along Figure 4BThe image shows a cross-sectional view drawn with line BB. The micro-LED display device 20 includes a carrier substrate 200, a first light-emitting unit 220, a first transparent substrate 212, a color filter layer 250, a second light-emitting unit 230, a second transparent substrate 214, a color resist layer 260, a third light-emitting unit 240, a first embankment structure 272, a second embankment structure 274, a first light-absorbing layer 282, and a second light-absorbing layer 284. The first light-emitting unit 220 includes a chip 222 and a wavelength conversion layer 224, the second light-emitting unit 230 includes a chip 232 and a wavelength conversion layer 234, and the third light-emitting unit 240 includes a chip 242. A conductive layer 212L is provided on the first transparent substrate 212, and a conductive layer 214L is provided on the second transparent substrate 214. The structure of the micro-LED display device 20 is similar to that of the micro-LED display device 10, except that the micro-LED display device 20 may have a first light-absorbing layer 282 and a second light-absorbing layer 284.

[0083] The micro LED display device 20 may have two or more first light-emitting units 220 on its carrier 200, two or more second light-emitting units 230 on its first transparent substrate 212, and two or more third light-emitting units 240 on its second transparent substrate 214. Each first light-emitting unit 220 is vertically aligned with one second light-emitting unit 230, and each second light-emitting unit 230 is vertically aligned with one third light-emitting unit 240. In this way, the first light-emitting units 220 on the carrier 200, the second light-emitting units 230 on the first transparent substrate 212, and the third light-emitting units 240 on the second transparent substrate 214 can form multiple pixel units and be assembled into a large display device, such as a display panel, an augmented reality device, and / or a virtual reality device. Since the first light-emitting units 220, second light-emitting units 230, and third light-emitting units 240 of the micro LED display device 20 are arranged vertically upwards, the area occupied by each pixel unit can be reduced, thereby increasing the pixel density of the display device.

[0084] Furthermore, the first embankment structure 272 and the second embankment structure 274 can be used to prevent light from the first light-emitting unit 220 and the second light-emitting unit 230 from entering adjacent first light-emitting units 220 and second light-emitting units 230, and to improve the color purity of the light emitted by each pixel unit. The first embankment structure 272 and the second embankment structure 274 stacked along the vertical direction can also reduce the area occupied by each pixel unit, thereby increasing the pixel density of the display device, while ensuring that the first embankment structure 272 and the second embankment structure 274 have sufficient thickness to reflect light from the first light-emitting unit 220 and the second light-emitting unit 230.

[0085] The micro-LED display device 20 may have a first light-absorbing layer 282 and a second light-absorbing layer 284. The first light-absorbing layer 282 is located between a first transparent substrate 212 and a second embankment structure 274. The second light-absorbing layer 284 is located on the second transparent substrate 214 and surrounds the third light-emitting unit 240. When light from the first light-emitting unit 220 passes through the first transparent substrate 212, the first light-absorbing layer 282 can absorb light that does not reach the second light-emitting unit 230, such as light that passes through the first transparent substrate 212 or the first embankment structure 272. When light from the second light-emitting unit 230 passes through the second transparent substrate 214, the second light-absorbing layer 284 can absorb light that does not reach the third light-emitting unit 240, such as light that passes through the second transparent substrate 214 or the second embankment structure 274. Therefore, the light concentration of the micro-LED display device 20 can be ensured. In some embodiments, the height H2 of the first light-absorbing layer 282 and the second light-absorbing layer 284 is between 1 micrometer and 5 micrometers. Other relevant details of the miniature LED display device 20 are similar to those of the miniature LED display device 10, and therefore will not be repeated here.

[0086] Figure 5A A cross-sectional view of a miniature light-emitting diode display device 30 according to some embodiments of the present invention is shown. Figure 5B A top view of a miniature light-emitting diode display device 30 illustrating some embodiments of the present invention is shown, and Figure 5A It is along Figure 5B The image shows a cross-sectional view drawn with line CC. The micro-LED display device 30 includes a carrier substrate 300, a first light-emitting unit 320, a first transparent substrate 312, a color filter layer 350, a second light-emitting unit 330, a second transparent substrate 314, a color resist layer 360, a third light-emitting unit 340, a first embankment structure 372, a second embankment structure 374, and a light-absorbing layer 380. The first transparent substrate 312 has a conductive layer 312L, and the second transparent substrate 314 has a conductive layer 314L. The third light-emitting unit 340 includes a chip 342. The structure of the micro-LED display device 30 is similar to that of the micro-LED display device 10, except that the structures of the first light-emitting unit 320 and the second light-emitting unit 330 are different from the structures of the first light-emitting unit 120 and the second light-emitting unit 130.

[0087] Specifically, the first light-emitting unit 320 may include a chip 322 and an adhesive material 324. The chip 322 is disposed on the carrier 300 to emit a first color light L1, such as red light. The adhesive material 324 is located between the chip 322 and the color separation filter layer 350. The second light-emitting unit 330 may include a chip 332 and an adhesive material 334. The chip 332 is disposed on the first transparent substrate 312 to emit a second color light L2, such as green light. The adhesive material 334 is located between the chip 332 and the color resist layer 360. The adhesive materials 324 and 334 may not contain wavelength conversion materials, therefore, the adhesive materials 324 and 334 will not convert the first color light L1 emitted by the chip 322 into the second color light L2 emitted by the chip 332. That is, the first color light L1 emitted by the chip 322 can pass through the color separation filter layer 350 into the second light-emitting unit 330, and then pass through the color resist layer 360 into the third light-emitting unit 340. The second color light L2 emitted by chip 332 can be reflected upwards by the color filter layer 350 and passes through the color resist layer 360 to enter the third light-emitting unit 340. Other details of the micro LED display device 30 are similar to those of the micro LED display device 10, so the relevant details will not be repeated here.

[0088] Figure 6A A cross-sectional view of a miniature light-emitting diode display device 40 according to some embodiments of the present invention is shown. Figure 6B A top view illustrating a miniature light-emitting diode display device 40 according to some embodiments of the present invention is shown, and Figure 6A It is along Figure 6B The line DD represents a cross-sectional view. Figure 7 This diagram illustrates a micro-LED display device 40 mounted on a backplate 41 in some embodiments of the present invention. The micro-LED display device 40 includes a carrier plate 400, a first light-emitting unit 420, a first transparent substrate 412, a color filter layer 450, a second light-emitting unit 430, a second transparent substrate 414, a color resist layer 460, a third light-emitting unit 440, a first embankment structure 472, a second embankment structure 474, and a light-absorbing layer 480. The first light-emitting unit 420 includes a chip 422 and a wavelength conversion layer 424, the second light-emitting unit 430 includes a chip 432 and a wavelength conversion layer 434, and the third light-emitting unit 440 includes a chip 442. The first transparent substrate 412 has a conductive layer 412L and a conductive layer 414M, and the second transparent substrate 414 has a conductive layer 414L. The structure of the micro LED display device 40 is similar to that of the micro LED display device 10, except that the first transparent substrate 412 and the second transparent substrate 414 of the micro LED display device 40 are bendable substrates, and the carrier plate 40 does not contain an active element array.

[0089] Specifically, the first transparent substrate 412 can be bent downwards, so that it surrounds the first light-emitting unit 420 and contacts the sidewall of the first embankment structure 472. Therefore, the conductive layer 412L of the first transparent substrate 412 extends downwards from the second light-emitting unit 430 along the first transparent substrate 412 and is electrically connected to the conductive pad 490 on the carrier plate 400 via the conductive material CM1. The second transparent substrate 414 can be bent downwards, so that it surrounds the second light-emitting unit 430 and contacts the sidewall of the second embankment structure 474. Therefore, the conductive layer 414L of the second transparent substrate 414 extends downwards from the third light-emitting unit 440 along the second transparent substrate 414 and is electrically connected to the conductive layer 414M of the first transparent substrate 412 via the conductive material CM3. The conductive layer 414M of the first transparent substrate 412 extends downwards along the first transparent substrate 412 and is electrically connected to the conductive pad 490 on the carrier plate 400 via the conductive material CM1. In this way, the micro LED display device 40 can be an independent package and can function as an independent pixel. Therefore, the micro LED display device 40 can be more easily mounted on the desired backplane as needed. Since the first light-emitting unit 420, the second light-emitting unit 430, and the third light-emitting unit 440 of the micro LED display device 40 are arranged vertically upwards, the area occupied by each pixel can be reduced, thereby increasing the pixel density of the display device.

[0090] refer to Figure 7 The backplate 41 may contain multiple active elements, and the upper surface of the backplate 41 may contain conductive pads 41L electrically connected to the active elements. When the micro LED display device 40 is mounted on the backplate 41, the conductive pads 490 of the micro LED display device 40 connected to the second light-emitting unit 430 and the third light-emitting unit 440 are electrically connected to the conductive pads 41L of the backplate 41 through the conductive material CM2. The conductive layer 400L connected to the first light-emitting unit 410 is also electrically connected to the conductive pads 41L of the backplate 41 through the conductive material CM2. In some embodiments, the conductive materials CM1, CM2, and CM3 may be made of conductive materials such as indium tin oxide or metal. The first light-emitting unit 420, the second light-emitting unit 430, and the third light-emitting unit 440 of the micro LED display device 40 can then be electrically connected to the conductive pads 41L on the backplate 41. It should be noted that although Figure 7 Only a miniature LED display device 40 is shown, but Figure 7This is merely an example. In some embodiments, the backplate 41 may have multiple micro-LED display devices 40, and these multiple micro-LED display devices 40 can be assembled on the backplate 41 to form a large display device, such as a display panel, an augmented reality device, and / or a virtual reality device. Since each micro-LED display device 40 is an independent package, when one of the display devices 40 fails, the failed micro-LED display device 40 can be easily identified and removed. In this way, another good micro-LED display device 40 can be transferred to the backplate 41 without damaging the conductive pads 41L on the backplate 41.

[0091] Figure 8 A cross-sectional view of a miniature light-emitting diode (LED) display device 50 according to some embodiments of the present invention is shown. The miniature LED display device 50 includes a carrier substrate 500, a first light-emitting unit 520, a first transparent substrate 512, a color filter layer 550, a second light-emitting unit 530, a second transparent substrate 514, a color resist layer 560, a third light-emitting unit 540, a first embankment structure 572, a second embankment structure 574, a first light-absorbing layer 582, a second light-absorbing layer 584, a conductive pad 590, and conductive materials CM1 and CM3. The first light-emitting unit 520 includes a chip 522 and a wavelength conversion layer 524, the second light-emitting unit 530 includes a chip 532 and a wavelength conversion layer 534, and the third light-emitting unit 540 includes a chip 542. The first transparent substrate 512 has conductive layers 512L and 514M, and the second transparent substrate 514 has a conductive layer 514L. The structure of the micro-LED display device 50 is similar to that of the micro-LED display device 40, except that the micro-LED display device 50 includes a first light-absorbing layer 582 and a second light-absorbing layer 584. The first light-absorbing layer 582 is located between the first transparent substrate 512 and the second embankment structure 574. The first light-absorbing layer 582 has a width W1, and the second light-absorbing layer 584 has a width W2, with the width W2 of the second light-absorbing layer being wider than the width W1 of the first light-absorbing layer, thereby absorbing light passing through the second transparent substrate 514 or the second embankment structure 574. The details of the first light-absorbing layer 582 and the second light-absorbing layer 584 are similar to those of the first light-absorbing layer 282 and the second light-absorbing layer 284 of the micro-LED display device 20, and therefore will not be described again here.

[0092] In summary, some embodiments of the present invention can stack light-emitting units emitting different colors vertically, thus reducing the area occupied by each pixel unit. Furthermore, in each pixel unit, the embankment structures surrounding the different light-emitting units are also vertically arranged. Therefore, the embankment structures do not occupy too much area in the horizontal direction, and the embankment structures can be formed with sufficient thickness to prevent light from one light-emitting unit from entering another adjacent light-emitting unit. In this way, the color purity of the pixel unit can be improved, and the pixel density of each display device can be increased simultaneously.

[0093] Although the present invention has been disclosed in conjunction with the above embodiments, it is not intended to limit the present invention. Any person skilled in the art can make some modifications and refinements without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention should be defined by the appended claims.

Claims

1. A miniature light-emitting diode display device, comprising: Carrier plate; A first light-emitting unit, on the carrier plate, the first light-emitting unit is configured to emit a first color of light, the first light-emitting unit comprising: A chip, on the carrier board, is configured to emit a third color light; and A wavelength conversion layer covers the chip of the first light-emitting unit and is configured to convert the third color light emitted by the chip into the first color light; A first transparent substrate is placed on the first light-emitting unit; The second light-emitting unit, on the first transparent substrate, comprises: A chip is disposed on the first transparent substrate and configured to emit the third color light; as well as A wavelength conversion layer covers the chip of the second light-emitting unit and is configured to convert the third color light emitted by the chip into the second color light, which is different from the first color light; A second transparent substrate covers the second light-emitting unit; as well as A third light-emitting unit is disposed on the second transparent substrate, wherein the second transparent substrate is disposed between the third light-emitting unit and the second light-emitting unit, and the third light-emitting unit includes: On the second transparent substrate, the chip of the third light-emitting unit is configured to emit the third color light, and the third color light is different from the first color light and the second color light; A color resist layer is provided on the second light-emitting unit, which is configured to allow the first color light and the second color light to pass through, and to absorb the third color light; A color-separating filter layer is disposed between the first light-emitting unit and the first transparent substrate to allow the first color light to pass through and to block the second color light and the third color light. The first embankment structure, on the carrier plate, surrounds the first light-emitting unit and the color-separating filter layer; as well as The second embankment structure surrounds the second light-emitting unit and the color resist layer on the first transparent substrate; A first light-absorbing layer is located between the first transparent substrate and the second embankment structure. as well as A second light-absorbing layer is disposed on the second transparent substrate and surrounds the third light-emitting unit, and the width of the second light-absorbing layer is wider than the width of the first light-absorbing layer. The first light-emitting unit, the second light-emitting unit, and the third light-emitting unit are arranged in a vertical direction; The first embankment structure overlaps with the second embankment structure along this vertical direction; Along this vertical direction, the projections of the first light-absorbing layer and the second light-absorbing layer do not overlap with the first, second, and third light-emitting units; and The carrier plate, the first light-emitting unit, the first transparent substrate, the second light-emitting unit, the second transparent substrate, and the third light-emitting unit are stacked sequentially in the vertical direction.

2. The miniature light-emitting diode display device as claimed in claim 1, wherein the first light-emitting unit further comprises: Adhesive material is placed between the chip and the color filter layer.

3. The miniature light-emitting diode display device as claimed in claim 1, wherein the second light-emitting unit further comprises: Adhesive material between the chip and the color resist layer.

4. The micro light-emitting diode display device as claimed in claim 1, wherein the second transparent substrate further surrounds the second light-emitting unit, and the first transparent substrate further surrounds the first light-emitting unit.

5. The micro light-emitting diode display device as claimed in claim 4, wherein the first transparent substrate contacts the sidewall of the first embankment structure.

6. The micro light-emitting diode display device as claimed in claim 5, wherein the second transparent substrate contacts the sidewall of the second embankment structure.

7. The micro light-emitting diode display device as claimed in claim 4, wherein the first transparent substrate includes a conductive layer, the second transparent substrate includes a conductive layer, the conductive layer of the second transparent substrate extends downward along the second transparent substrate, and is electrically connected to the conductive layer of the first transparent substrate by means of a conductive material.

8. The micro light-emitting diode display device as claimed in claim 7, wherein the conductive layer of the first transparent substrate extends downward along the first transparent substrate and is electrically connected to a conductive pad of the carrier plate by means of another conductive material.

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